EP4000095A1 - Capteur d'images - Google Patents
Capteur d'imagesInfo
- Publication number
- EP4000095A1 EP4000095A1 EP20736358.1A EP20736358A EP4000095A1 EP 4000095 A1 EP4000095 A1 EP 4000095A1 EP 20736358 A EP20736358 A EP 20736358A EP 4000095 A1 EP4000095 A1 EP 4000095A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- optical sensor
- opening
- radiation
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- PMGXPAVHYDEYMB-UHFFFAOYSA-N 2-ethyl-1-thieno[2,3-c]thiophen-4-ylhexan-1-one Chemical compound S1C=CC2=C(C(=O)C(CC)CCCC)SC=C21 PMGXPAVHYDEYMB-UHFFFAOYSA-N 0.000 description 1
- NUCIQEWGTLOQTR-UHFFFAOYSA-N 4,4-bis(2-ethylhexyl)-4h-cyclopenta[1,2-b:5,4-b']dithiophene Chemical compound S1C=CC2=C1C(SC=C1)=C1C2(CC(CC)CCCC)CC(CC)CCCC NUCIQEWGTLOQTR-UHFFFAOYSA-N 0.000 description 1
- RXACYPFGPNTUNV-UHFFFAOYSA-N 9,9-dioctylfluorene Chemical compound C1=CC=C2C(CCCCCCCC)(CCCCCCCC)C3=CC=CC=C3C2=C1 RXACYPFGPNTUNV-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- KJOLVZJFMDVPGB-UHFFFAOYSA-N perylenediimide Chemical compound C=12C3=CC=C(C(NC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)NC(=O)C4=CC=C3C1=C42 KJOLVZJFMDVPGB-UHFFFAOYSA-N 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present description relates generally to optoelectronic devices based on optical sensors with organic photodiodes integrated on a substrate with MOS transistors.
- Some sensors are integrated on MOS transistor substrates constituting the control electronics of the photodiodes.
- One embodiment overcomes all or part of the drawbacks of known optoelectronic devices.
- One embodiment provides for a method of manufacturing an optoelectronic device comprising an optical sensor with organic photodiodes adapted to capture radiation, the optical sensor covering an electronic circuit with MOS transistors, the method comprising the following successive steps:
- the electronic circuit comprises on the surface at least one electrically conductive pad, the method further comprising the following step:
- the formation of the first opening is carried out by reactive ionic etching.
- the formation of the first opening is carried out by laser ablation.
- the formation of the first opening is carried out by nanoprint lithography.
- the first layer is made of a material photosensitive to electromagnetic radiation and the formation of the first opening comprises a step of exposing the first layer to said electromagnetic radiation.
- step b) precedes step c), the method comprising, between steps b) and c), the step of forming a second opening in the second layer, the first opening being formed in step c) in the extension of the second opening.
- the method further comprises the following steps:
- step c) forming a block of photosensitive resin facing said electrically conductive pad, said block comprising a top and flanks; perform step c), the second layer covering in particular the top of said block and not completely covering the sides;
- step c) precedes step b), the second layer also covering the side walls of the first opening.
- the first layer is made from a material chosen from the group comprising polystyrene, polyepoxides, polyacrylates, organic resins, in particular photosensitive resins, silicon nitride and silicon dioxide.
- the first layer is deposited by:
- the first layer has an average thickness between 100 nm and 15 ⁇ m, preferably between 500 nm and 5 ⁇ m, preferably between 1 ⁇ m and 3 ⁇ m.
- the second layer is made of a material chosen from the group comprising aluminum oxide, silicon nitride and silicon dioxide.
- the second layer has an average thickness of between 2 nm and 300 nm.
- the method further comprises the following steps: formation of a third anti-reflective and / or infrared filtering layer; and forming an array of microlenses.
- An embodiment also provides an optoelectronic device comprising: an electronic circuit with MOS transistors; an optical sensor with organic photodiodes adapted to capture radiation, the optical sensor covering the electronic circuit; a first layer covering the optical sensor, on the side of the optical sensor opposite to the electronic circuit, the first layer being transparent to said radiation and having a planar face on the side opposite to the optical sensor; and a second layer planes over the first layer.
- Figure 1 is a sectional view, partial and schematic, of the structure obtained in a step of an embodiment of a method of manufacturing an optoelectronic device comprising organic photodiodes on an integrated circuit with transistors MOS;
- FIG. 2 illustrates another step of the method
- FIG. 3 illustrates another step of the method
- FIG. 4 illustrates another step of the method
- FIG. 5 illustrates another step of the method
- FIG. 6 illustrates another step of the method
- FIG. 7 illustrates another step of the method
- FIG. 8 illustrates another step of the method
- FIG. 9 illustrates another step of the method
- FIG. 10 illustrates another step of the method
- FIG. 11 illustrates another step of the method
- FIG. 12 illustrates another step of the method
- FIG. 13 illustrates another step of the method
- Figure 14 is a sectional view, partial and schematic, of the structure obtained in a step of another embodiment of a method of manufacturing an optoelectronic device comprising organic photodiodes on an integrated circuit to MOS transistors;
- FIG. 15 illustrates another step of the method
- FIG. 16 illustrates another step of the method
- FIG. 17 illustrates another step of the method
- FIG. 18 illustrates another step of the method
- Figure 19 is a sectional view, partial and schematic, of the structure obtained in a step of another embodiment of a method of manufacturing an optoelectronic device comprising organic photodiodes on an integrated circuit to MOS transistors;
- FIG. 20 illustrates another step of the method
- FIG. 26 illustrates another step of the method
- the interface layer 110 may comprise a self-assembled monomolecular layer or a polymer, for example (polyethyleneimine, ethoxylated polyethyleneimine, poly [(9, 9-bis (3'- (N, N-dimethylamino) propyl) -2 , 7-fluorene) - alt-2, 7- (9, 9-dioctylfluorene)].
- the thickness of the interface layer 110 is preferably between 0.1 nm and 1 ⁇ m.
- the interface layer 110 can be grafted in a privileged way on the pads 106 (and possibly 108 and 109), which directly gives the structure shown in FIG. 2. As a variant, the interface layer 110 can be deposited on the entire structure shown. in FIG.
- PCDTBT poly [(4, 8-bis- ( 2- ethylhexyloxy) -benzo [1, 2-b; 4, 5-b '] dithiophene) -2, 6-diyl- alt- (4- (2-ethylhexanoyl) -thieno [3, 4-b] thiophene) ) -2, 6-diyl]
- PBDTTT-C poly [2-methoxy-5- (2-ethyl-hexyloxy) - 1, 4-phenylene-vinylene] (MEH-PPV) or poly [2, 6- (4, 4-bis- (2-ethylhexyl) -4H-cyclopenta [2, 1-b; 3, 4-b '] dithiophene) -alt-
- N-type semiconductor materials suitable for producing the active layer 112 are fullerenes, in particular C60, [6, 6] -phenyl-C61-butanoate ([60] PCBM), Methyl [6, 6] -phenyl-C71-butanoate ([70] PCBM), perylene diimide, zinc oxide (ZnO) or nanocrystals allowing the formation of quantum dots (in English quantum dots).
- FIG. 4 shows the structure obtained after the deposition of a layer of photosensitive resin 112 on the active layer 111, and the formation of openings 113 in the photosensitive layer 112, by photolithography techniques, a single opening 113 being shown in Figure 4, for expose the organic layer 111 above the pads 108 and 109.
- FIG. 5 represents the structure obtained after the etching of openings 114 in the organic layer 111 in the extension of the openings 113 of the photosensitive layer 112, and the etching of the layers 106 to expose the pads 108 and 109.
- FIG. 6 shows the structure obtained after the removal of the photosensitive layer 112 and after the deposition, on the entire structure, of an electrode layer 115.
- the electrode layer 115 is in particular in contact. with the studs 108.
- the electrode layer 115 is at least partially transparent to the light radiation picked up by the active layer 111.
- the electrode layer 115 may be of a conductive and transparent material, for example of conductive and transparent oxide or TCO (acronym English for Transparent Conductive Oxide), carbon nanotubes, graphene, a conductive polymer, a metal, or a mixture or alloy of at least two of these compounds.
- TCO conductive and transparent oxide
- the conductive layer 115 can have a single or multi-layer structure.
- Examples of metals suitable for making the electrode layer 115 are silver (Ag), aluminum (Al), gold (Au), copper (Cu), nickel (Ni), titanium (Ti) and chromium (Cr).
- An example of a multilayer structure suitable for making the electrode layer 115 is a multilayer structure of AZO and silver of the AZO / Ag / AZO type.
- the electrode layer 115 is made of PEDOT: PSS.
- the thickness of the electrode layer 115 may be between 10 nm and 5 ⁇ m, for example of the order of 30 nm. In the case where the electrode layer 115 is metallic, the thickness of the electrode layer 115 is less than or equal to 20 nm, preferably less than or equal to 10 nm.
- FIG. 7 represents the structure obtained after the deposition of a layer of photosensitive resin 116 on the electrode layer 115, and the formation of openings 117 in the photosensitive layer 116, by photolithography techniques, only one opening 117 being shown in FIG. 7, to expose the electrode layer 115 above the pads 109.
- Figure 8 shows the structure obtained after the etching of openings 118 in the electrode layer 115 in the extension of the openings 117 of the photosensitive layer 116 to expose the pads 109.
- the layer 110 is shown discontinuous at the level of the photodiodes 107 while the organic layers 111 and 115 are shown continuous at the level of the photodiodes 107.
- the interface layer 110 may be continuous at the level of the photodiodes 107.
- the organic layers 111, 115 may be discontinuous at the level of the photodiodes 107.
- at least the active layer 111 and the electrode layer 115 are continuous at least at the level of the photodiodes 107. This allows to avoid a step of etching the layers of the stack 103 to delimit the photodiodes 107.
- the thickness of the stack may be between 300 nm and 1 ⁇ m, preferably between 300 nm and 500 nm.
- the electrode layer 115 at the top of the stack 103 can be.
- PEDOT PSS which is a hydrophilic material
- the formation of the encapsulation layer in Al 2 O 3 by ALD can use water vapor as a precursor.
- PEDOT PSS with the water vapor during the formation of the encapsulation layer. This can lead to the appearance of mechanical stresses in the stack 103, from which the stack 103 may partially detach from the electronic circuit 101.
- the buffer layer 201 is a dielectric, organic or inorganic layer.
- organic materials are polystyrene, polyepoxides, polyacrylates or organic resins, in particular photosensitive resins.
- the viscosity and the thickness of the deposited material are adjusted to obtain the planarization of the encapsulation layer.
- inorganic materials are S1 3 N 4 and S1O 2 .
- the buffer layer 201 is made of S13N4 or of S1O 2 , its deposition is, for example, carried out by cathodic sputtering (Sputtering), by PVD, or by PECVD.
- the average thickness of the buffer layer 201 is between 100 nm and 15 ⁇ m, preferably between 500 nm and 5 ⁇ m, preferably between 1 ⁇ m and 3 ⁇ m.
- Al 2 O 3 a layer of aluminum oxide (Al 2 O 3) , obtained for example by ALD;
- a layer of S1 3 N 4 or of S1O 2 obtained for example by PVD or by PECVD; or
- the encapsulation layer 301 has a thickness between 2 nm and 300 nm, preferably between 2 nm and 200 nm, more preferably between 2 nm and 150 nm.
- FIG. 12 represents the structure obtained after the deposition of a layer of photosensitive resin 401 on the encapsulation layer 301 and the formation of openings 402 in the layer of photosensitive resin 401, by photolithography techniques, for exposing the encapsulation layer 301 at the level of the pads 109, a single opening 402 being shown in FIG. 12.
- FIG. 14 represents the structure obtained after the implementation of the steps described above in relation to FIGS. 2 to 10, and after the deposition of a layer of photosensitive resin 501 on the buffer layer 201 and the formation of openings 502 in the photosensitive layer 501, by photolithography techniques, to expose the buffer layer 201 at the level of the pads 109, a single opening 502 being shown in FIG. 14.
- the photosensitive layer 501 can have the same composition and the same thickness as the photosensitive layer 401 described above.
- FIG. 15 represents the structure obtained after the etching of openings 503 in the buffer layer 201 using the photosensitive layer 501 as an etching mask, the openings 503 being in the extension of the openings 502, to expose the pads 109.
- the openings 503 can be made by RIE. EIR can be carried out with a gas mixture of dioxygen and sulfur hexafluoride (0 2 + SF 6) , a mixture of dioxygen and methane (O 2 + CH 4 ), or pure dioxygen (O2).
- the openings 503 are obtained by laser ablation of the buffer layer 201.
- the openings 503, seen in a direction perpendicular to the face 202 have a surface area substantially greater than that of the pads 109.
- the openings 503, seen in a direction perpendicular to the face 202 have dimensions of the order of 100 ⁇ m * 100 ⁇ m while the pads 109 have dimensions of the order of 70 ⁇ m * 70 ⁇ m.
- such a shape can be obtained in particular by providing, during the photolithography steps, a step of hardening the surface of the photosensitive layer used to form blocks 504, for example by immersing the resin layer in an aromatic solvent, such as chlorobenzene.
- such a shape can be obtained during the stage of developing the resin layer, the resin being chosen to have a development rate which varies in the direction perpendicular to the resin layer, the resin layer. resin being more resistant to development on the side of its free upper face.
- the dimensions of the base of block 504 are greater than those of pad 109 so as to ensure that block 504 covers all of pad 109.
- the method of forming the encapsulation layer 505 is preferably a directional deposition method so that, due to the flared shape of the block 504 which is wider at its top than at its base, the encapsulation layer 505 does not deposit on at least part of the side walls of the block 504.
- the encapsulation layer may not be deposited on at least part of the side walls of the block 504, in particular when the cap profile of the block 504 is pronounced and the thickness of the encapsulation layer is very low, for example less than 25 nm.
- Figure 18 shows the structure obtained after a step of removing the sacrificial blocks 505. According to one embodiment, this is achieved by soaking the structure shown in Figure 17 in a bath containing a solvent which dissolves the sacrificial blocks 505.
- the openings 503 can be filled with a metallic material to allow the optoelectronic device to be connected to an external element.
- Figures 19 to 22 are sectional views, partial and schematic, of structures obtained in successive steps of another embodiment of a method of manufacturing an optoelectronic device comprising a sensor with organic photodiodes and MOS transistors.
- FIG. 20 represents the structure obtained after a step of lithography by nanoprinting (NIL, acronym for Nanimprint lithography) comprising the application of the punch 601 against the buffer layer 201 so that the patterns 602 penetrate into the buffer layer 201
- NIL nanoprinting
- the application of the punch 601 against the buffer layer 201 is carried out under pressure.
- the application of the punch 601 against the buffer layer 201 is carried out at a temperature above the glass transition temperature of the material making up the buffer layer 201.
- FIG. 21 represents the structure obtained after the withdrawal of the punch 601. Recesses 603 having substantially the shape of the desired openings are present in the buffer layer 201. Unwanted residues 604 of the buffer layer 201 may be present, in particular on the pads 109 and the rest of the optoelectronic circuit 101.
- FIG. 22 represents the structure obtained after a directive etching step, for example plasma etching, to remove the residues 604.
- the desired openings 605 are thus obtained exposing the pads 109.
- the present method continues with the deposition of an encapsulation layer, not shown, on the entire structure and in particular in the openings 605 and on the pads 109 and the removal, for example by etching, of the portion of the encapsulation layer to expose the pads 109, or by the formation of blocks of sacrificial resin on the pads 109, by the deposition of the encapsulation layer over the entire structure and by the removal of the blocks sacrificial, for example as has been described previously in relation to Figures 16 to 18.
- FIG. 24 represents the structure obtained after a step of depositing an encapsulation layer 702 on the structure shown in FIG. 23.
- the encapsulation layer 702 has the same thickness and the same. composition than the encapsulation layer 301 described above and can be formed by the same methods as those described above for the encapsulation layer 301.
- the encapsulation layer 702 extends over the buffer layer 201 and over the upper face of each sacrificial block 701.
- the method of forming the encapsulation layer 702 is a directive deposition process so that, due to the flared shape of the block 701, which is wider at its top than at its base, the encapsulation layer
- EIR 704 can be performed by RIE.
- EIR can be performed with a gas mixture of dioxygen and sulfur hexafluoride (0 2 + SF 6) , a mixture of dioxygen and methane (O 2 + CH 4 ), or pure dioxygen (O2)
- the pads 109 and the openings 704 can be located sufficiently far from the array of photodiodes 107 so that the degradation of the organic layers of the stack 103 at the level of the photodiodes 107 due to water and / or oxygen is reduced.
- the system 800 further comprises, on the optoelectronic device 801, from bottom to top in FIG. 27:
- the layer 802 placed on the optoelectronic device 801, can have the same composition as the buffer layer 201 described above and be formed by the same methods.
- Layer 802 may have a thickness between 100 nm and 15 ⁇ m, preferably between 1 ⁇ m and 3 ⁇ m.
- the array of microlenses 803 can be deposited on the layer 802 such that each microlens 803 is facing a photodiode (not shown).
- the microlenses 803 have a thickness of between 0.4 ⁇ m and 10 ⁇ m, preferably between 0.4 ⁇ m and 2 ⁇ m, and a diameter of between 0.9 ⁇ m and 15 ⁇ m, preferably between 0.9 ⁇ m and 3 ⁇ m. .
- the 803 microlenses can be made of polymethyl methacrylate (PMMA), PET, PEN, COP, polydimethylsiloxane (PDMS) / silicone, or epoxy resin.
- PMMA polymethyl methacrylate
- PET PET
- PEN PEN
- COP polydimethylsiloxane
- silicone or epoxy resin.
- the 803 microlenses advantageously allow to increase the collection of rays of the incident radiation towards the photodiodes 107.
- Layer 804 is deposited on the matrix of microlenses 803.
- Layer 804 is for example made of a material comprising particles of silicon oxide (SiCp), an acrylic polymer and epoxy resin as binder.
- Layer 804 can have a thickness between 0.4 ⁇ m and 10 ⁇ m, preferably between 0.4 ⁇ m and 3 ⁇ m.
- the coating 805 is formed by deposition, preferably of silicon oxynitride.
- the coating 805 can have a thickness between 50 nm and 1 ⁇ m, preferably between 100 nm and 250 nm.
- FIG. 28 is a schematic, transverse and partial sectional view of another embodiment of a system 900 comprising an optoelectronic device 801 manufactured according to one of the embodiments of the manufacturing methods described above.
- the system 900 comprises all the elements of the system 800 described above, with the difference that the layer 804 is not present and that the coating 805 is interposed between the optoelectronic device 801 and the transparent layer 802.
- FIG. 27 or 28 is preferably implemented when the total thickness of the transparent layer 201 and of the encapsulation layer 501, 505 or 702 is greater than the spacing, or not , between each photodiode, for example of the order of 1 ⁇ m to 10 ⁇ m, preferably of 1 ⁇ m to 3 ⁇ m, for example approximately 1.1 ⁇ m. This makes it possible to focus the radiation towards each photodiode and thus avoid parasitic excitations of neighboring photodiodes.
- the etching of openings 404 or 503 in the encapsulation layer 201 involves the deposition of a layer of photosensitive resin 401, 501 on the encapsulation layer 201 and the formation of openings 402, 502 in this resin layer 401, 501 by photolithography steps.
- the openings 404, 503 can be formed directly in the encapsulation layer by photolithography steps comprising exposure. parts of the radiation photosensitive encapsulation layer.
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Abstract
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR1908017A FR3098996A1 (fr) | 2019-07-16 | 2019-07-16 | Capteur d'images |
PCT/EP2020/069315 WO2021008980A1 (fr) | 2019-07-16 | 2020-07-09 | Capteur d'images |
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EP4000095A1 true EP4000095A1 (fr) | 2022-05-25 |
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EP20736358.1A Pending EP4000095A1 (fr) | 2019-07-16 | 2020-07-09 | Capteur d'images |
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US (1) | US20220246875A1 (fr) |
EP (1) | EP4000095A1 (fr) |
JP (1) | JP2023504960A (fr) |
KR (1) | KR20220031926A (fr) |
CN (1) | CN114402452A (fr) |
FR (1) | FR3098996A1 (fr) |
TW (1) | TW202118040A (fr) |
WO (1) | WO2021008980A1 (fr) |
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WO2022159456A1 (fr) * | 2021-01-19 | 2022-07-28 | SWIR Vision Systems Inc. | Photodétecteurs à points quantiques colloïdaux |
CN220603808U (zh) | 2022-05-16 | 2024-03-15 | 3M创新有限公司 | 用于显示系统的光学构造体 |
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US7268369B2 (en) * | 2004-07-06 | 2007-09-11 | Fujifilm Corporation | Functional device and method for producing the same |
JP5346546B2 (ja) * | 2008-10-24 | 2013-11-20 | 富士フイルム株式会社 | 有機半導体、光電変換素子、撮像素子及び新規化合物 |
JP2011187565A (ja) * | 2010-03-05 | 2011-09-22 | Toshiba Corp | 固体撮像装置の製造方法、及び固体撮像装置 |
JP6021439B2 (ja) * | 2012-05-25 | 2016-11-09 | キヤノン株式会社 | 固体撮像装置 |
WO2014103150A1 (fr) * | 2012-12-28 | 2014-07-03 | パナソニック株式会社 | Dispositif d'imagerie monolithique et son procédé de fabrication |
FR3006551B1 (fr) * | 2013-05-30 | 2016-12-09 | Linxens Holding | Procede de fabrication d'un circuit imprime, circuit imprime obtenu par ce procede et module electronique comportant un tel circuit imprime |
JP6598436B2 (ja) * | 2014-08-08 | 2019-10-30 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
KR102356695B1 (ko) * | 2014-08-18 | 2022-01-26 | 삼성전자주식회사 | 광 유도 부재를 가지는 이미지 센서 |
KR102404726B1 (ko) * | 2015-06-24 | 2022-05-31 | 삼성전자주식회사 | 유기 전자 소자 및 그 제조 방법 |
US11127910B2 (en) * | 2016-03-31 | 2021-09-21 | Sony Corporation | Imaging device and electronic apparatus |
JP2018093052A (ja) * | 2016-12-02 | 2018-06-14 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
KR20180074308A (ko) * | 2016-12-23 | 2018-07-03 | 삼성전자주식회사 | 전자 소자 및 그 제조 방법 |
FR3082055B1 (fr) * | 2018-06-04 | 2022-01-14 | Isorg | Dispositif optoelectronique et son procede de fabrication |
-
2019
- 2019-07-16 FR FR1908017A patent/FR3098996A1/fr active Pending
-
2020
- 2020-07-09 KR KR1020227004317A patent/KR20220031926A/ko not_active Application Discontinuation
- 2020-07-09 CN CN202080065150.4A patent/CN114402452A/zh active Pending
- 2020-07-09 US US17/625,985 patent/US20220246875A1/en active Pending
- 2020-07-09 JP JP2022502564A patent/JP2023504960A/ja active Pending
- 2020-07-09 EP EP20736358.1A patent/EP4000095A1/fr active Pending
- 2020-07-09 WO PCT/EP2020/069315 patent/WO2021008980A1/fr unknown
- 2020-07-10 TW TW109123297A patent/TW202118040A/zh unknown
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CN114402452A (zh) | 2022-04-26 |
WO2021008980A1 (fr) | 2021-01-21 |
FR3098996A1 (fr) | 2021-01-22 |
TW202118040A (zh) | 2021-05-01 |
US20220246875A1 (en) | 2022-08-04 |
JP2023504960A (ja) | 2023-02-08 |
KR20220031926A (ko) | 2022-03-14 |
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