EP3980797A1 - Device and method for using diamond nanocrystals having nv colour centres in cmos circuits - Google Patents

Abstract

The invention relates to a sensor system on the basis of diamonds with a high density of NV centres. The description comprises a) methods for producing the necessary diamonds with high NV centre density, b) features of such diamonds, c) sensor elements for the use of the fluorescence radiation of such diamonds, d) sensor elements for the use of the photocurrent of such diamonds, e) systems for evaluating these variables, f) systems with reduced noise for evaluating these systems, g) housing for the use of such systems in automatic placement systems, g) method for testing these systems, and h) a musical instrument as an example of a final use of all of these devices and methods.

Description

NV center based microwave-free quantum sensor and its applications and

Expressions

priorities

This international application takes the following priorities from the following German ones

Patent applications in claim: DE 10 2019 009 153.1 from July 25, 2019, DE 10 2019 009 155.8 from August 5, 2019, DE 10 2019 005 484.9 from August 5, 2019, DE 10 2019 129 092.9 from October 28, 2019,

DE 10 2019 130 115.7 dated 07/11/2019, DE 10 2020 003 532.9 dated 05/04/2020. Furthermore, the priority of the division requested from the German Patent Office from DE 10 2020 107 831.5, the filing date of which is March 22, 2020, is claimed.

Field of invention

The invention relates, inter alia, to a method and a device for generating acoustically equivalent electrical and digital signals by means of sensors based on quantum mechanical effects as microphones or pickups for musical instruments and other technical and medical instruments. The present invention thus relates in particular to the detection of magnetic flux densities B, electrical flux densities D, pressures P, movement speeds v, position coordinates, distances, electrical currents, forces on atomic nuclei afflicted with a magnetic moment, accelerations a,

Gravitational field strengths g, mechanical and electromagnetic vibrations,

Rotational speeds co, temperatures q, intensities of ionizing radiation using sensors based on quantum mechanical effects. The mechanical vibrations can be used, for example, in musical instruments to generate tones. The assessment of the amplitude and frequency of mechanical vibrations can also be used for quality control of motors or other regularly moving components. Further

Applications are in use as a seismograph or for medical examinations. Generic methods for positions, movements, accelerations,

Converting rotational speeds or vibrations into electrically or digitally equivalent signals are pressure-based sensors, thermoelastic or magnetic induction-based methods. The latter is especially useful for electric (electric) guitars and basses

common. According to the prior art, it is known, for example, that electric guitars or electric basses are equipped with pickups in order to convert the vibrations of a struck string into acoustic signals. The induction of voltages by means of temporal field changes in a coil is used according to Faraday's law. The determination of vibrations by geophones also uses a coupling of earth vibrations to a coil in which a freely movable magnet is located.

A fundamental disadvantage of this method is that the induction voltage is determined by the change in the magnetic field over time, in particular by changing the magnetic flux B, that is to say it is a differential filter with a corresponding noise gain. The induction of the coil in the measuring system also represents a low-pass filter and leads to non-linear transmissions of different mechanically composed vibrations

Frequencies. Pressure-based sensors have similar disadvantages. Conventional magnetic sensors also have the disadvantage that they have a low sensitivity or show a strong temperature dependency or both. For example, fall sensor elements have a high internal resistance which limits the measuring speed. The transmission of the mechanical vibrations into acoustically equivalent electrical or digital signals is therefore only possible to a limited extent with the current technology. The invention is also directed to a housing with a sensor system and / or quantum technology system. The sensor system has a sensor element with a paramagnetic center (NV1) in the material of a sensor element. All sub-devices of the sensor system are preferably not designed to be ferromagnetic. This applies in particular to the lead frame for mounting the sensor system within an open-cavity housing. The paramagnetic center (NV1) is preferably an NV center in a diamond crystal, which serves as a sensor element, with diamond then at least in part

Represents sensor element material. The use of other centers such as the ST1 center or the SiV center or the GeV center is conceivable. The invention is also directed to a corresponding sensor system and / or quantum technology system, the optical transmitter (PLI) of the sensor system being chopped, ie pulse-modulated, and all remnants of the chopper frequency spectrum from the spectrum of the Sensor output signal (out) must be removed. In particular, a special type of noise suppression is claimed. With pulse modulation, different

Modulation methods such as pulse amplitude modulation (PAM), pulse code modulation (PCM), pulse frequency modulation (PFM), pulse width modulation (PWM), pulse pause modulation (PPM), pulse phase modulation (PPM) and pulse position modulation (PPM). Reference is made to https://de.wiki ^' pedia.org/wiki/Pulsmoduiation.

Preliminary remarks

The features described below and the features of the claims can typically be combined with one another, even if such combinations are in the claims of

First registration are not combined with each other, as z. Sometimes only preferred and / or exemplary combinations were reflected in the claims and the description due to lack of space.

A prerequisite for such a combination, which may not be expressly described here, is the usefulness and functionality of the combination, which can possibly be tested by a person skilled in the art. The disclosure expressly also includes these combinations.

General introduction

Recently, a great many publications have been made on the use of NV centers as quantum dots for quantum sensing, quantum computing, and quantum cryptography.

Sensors based on quantum mechanical effects are preferably based on paramagnetic spin states and generate no or an extremely low magnetic field themselves. They allow magnetic fields of up to several hundred kHz to be determined independent of frequency. Compared to magnetic field measuring methods based on induction, the measuring system does not act on the possibly oscillating system to be measured and thus allows an uninfluenced measurement of the system to be measured. Due to the measuring principle based on quantum mechanical effects, the detection principle is largely insensitive to temperature.

FIG. 1 shows a quantum dot-based measuring system according to the prior art, schematically as a greatly simplified block diagram. In the prior art, one emits

_Pump radiation _source (PLI) with a pump radiation _wavelength (l _rGhr ) as a function of a transmission signal (S5) pump radiation (LB) into a first transmission path (II). For the intensity il of the pump radiation (LB) radiated into the first transmission path (II) we find equation I in a linear approximation:

H = hO + hRa + hl * (s5w + s5g + hRb)

Here, hO describes an offset value that is specific for the pump radiation source (PLI). hRa describes a noise that is independent of intensity. hl describes a proportionality factor that applies to the pump radiation source (PLI) at the selected operating point with a linear approximation. s5w represents the instantaneous value of the alternating component (S5w) of the transmission signal (S5). s5g represents the instantaneous value of the direct component (S5g) of the transmission signal (S5). hRb stands for the amplified input noise of the pump radiation source (PLI). Thus, in the prior art, the pump radiation source (PLI) is modulated with the transmission signal (S5).

Only a first portion al of the pump radiation (LB), which is located in the first transmission path (II), reaches the sensor element with the paramagnetic center (NV1) or the paramagnetic centers (NV1). The sensor element is preferably one or more diamonds and the paramagnetic center (NV1) in this case is then preferably one or more NV centers.

The pump radiation (LB) from the first transmission link (II) irradiates the one or the other

paramagnetic centers (NV1) of the sensor element thus with pump radiation (LB). The paramagnetic center (NV1) or the paramagnetic centers (NV1) convert a second portion a2 of the received pump radiation (LB) into fluorescence radiation (FL) with an intensity i2. i2 = al * a2 * [hO + hRa + hl * (s5w + s5g + hRb)]

The paramagnetic center (NV1) or the paramagnetic centers (NV1) thus radiate the fluorescence radiation (FL) into a second transmission path (12) with the intensity i2. The sensor element also reflects or transmits a third component a3 of the pump radiation (LB) into the second transmission path (12). i2 = al * a2 * [h0 + hRa + hl * (s5w + s5g + hRb)] + al * a3 * [h0 + hRa + hl * (s5w + s5g + hRb)]

An optical filter (Fl), which is assumed to be ideal here, transmits the fluorescence radiation (FL) and absorbs or reflects the pump radiation (LB) so that only a fourth part a4 of the fluorescence radiation (FL) reaches the radiation receiver (PD). i2 '= a4 * al * a2 * [hO + hRa + hl * (s5w + s5g + hRb)]

The radiation receiver (PD) receives this portion of the fluorescence radiation (FL) with the intensity i2 'at the end of the second transmission path (12) and converts it into a receiver output signal (SO) with the value (sO). s0 = d0 + dRa + dl * (l2 '+ dRb) sO = dO + dRa + dl * (a4 * al * a2 * [hO + hRa + hl * (s5w + s5g + hRb)] + dRb)

Here, dO describes an offset value that is specific for the radiation receiver (PD). dRa describes a noise of the radiation receiver (PD), which is independent of the intensity. dl describes a proportionality factor that applies to the radiation receiver (PD) in the selected operating point with linear approximation. dRb stands for the amplified input noise of the radiation receiver (PD). Multiplying results in: s0 = d0 + dRa + dl * a4 * al * a2 * h0 + dl * a4 * al * a2 * hRa + dl * a4 * al * a2 * hl * s5w + dl * a4 * al * a2 * hl * s5g + dl * a4 * al * a2 * hl * hRb + dl * a4 * al * a2 * dRb

In the prior art, it is then multiplied by the instantaneous value (s5w) des

Alternating portion (S5w) of the transmission signal (S5) to the filter input signal (S3): s3 = d0 * s5w + dRa * s5w + dl * a4 * al * a2 * h0 * s5w + dl * a4 * al * a2 * hRa * s5w + dl * a4 * al * a2 * hl * s5w * s5w + dl * a4 * al * a2 * hl * s5g * s5w + dl * a4 * al * a2 * hl * hRb * s5w + dl * a4 * al * a2 * dRb * s5w

We now use a linear loop filter (TP) with the filter function F [X1] XI and XI let the two values of any two signals x be any real factor. A filter with the

For the purposes of this disclosure, the filter function F [X1] is then a linear filter if (Equation XIII):

F [X1 + X2] = F [X1] + F [X2]

F [x * Xl] = x * F [Xl]

This filter input signal (S3) is then filtered in a low-pass filter as a loop filter (TP) in the prior art.

This loop filter (TP) is a linear filter with the filter function F [s3] according to equation XIII, with the value (s3) of the filter input signal (S3) being the input variable of the filter function F [].

The structure of the loop filter (TP) is typically chosen so that the following applies at least approximately:

F [s5w] = 0 F [s5w * s5w] = l

F [l] = l

For the filter output signal (S4) we then get: s4 = dO * F [s5w] + F [dRa * s5w] + dl * a4 * al * a2 * h0 * F [s5w] + dl * a4 * al * a2 * F [hRa * s5w]

+ dl * a4 * al * a2 * hl * F [s5w * s5w] + dl * a4 * al * a2 * hl * s5g * F [s5w]

+ dl * a4 * al * a2 * hl * F [hRb * s5w] + dl * a4 * al * a2 * F [dRb * s5w]

With F [s5w] = 0 and F [s5w * s5f] = l we then find: s4 = dl * a4 * al * a2 * hl + F [dRa * s5w] + dl * a4 * al * a2 * F [hRa * s5w] + dl * a4 * al * a2 * hl * F [hRb * s5w]

+ dl * a4 * al * a2 * F [dRb * s5w]

As can be easily seen, the noise is reduced by using higher-frequency

Noise components are mixed down with the transmission signal (S5). Since the noise levels of these noise components are smaller with regard to 1 / f smoking, which is dominant at low frequencies, there is an improvement in the noise behavior. However, the noise, especially the white noise, does not go away.

The instantaneous value (sO) of the receiver output signal (SO) is multiplied by the instantaneous value (s5) of the transmission signal (S5) and the resulting value of the filter input signal is then filtered in a loop filter (TP).

This problem is significantly reduced by the device and method disclosed here. A complete elimination of the noise is known not to be possible for physical reasons.

Furthermore, the prior art does not disclose any methods for setting diamonds with a high density of NV centers, which are necessary to achieve a good measurement signal.

In addition, no methods for increasing the contrast (KT) are known from the prior art. On the state of the art in the production of diamonds with a high density of NV centers and in the production of red diamonds

The healing of crystal damage and the change of the

The appearance of diamonds is known without revealing the production of red diamonds.

A method for reducing the color of diamonds is known from EP 0 014 528 B1. This is a process for weakening the color of diamonds of type 1b, which is characterized in EP 0 014 528 B1 in that the diamond is exposed to such an energy flow and that at least 1018 gaps per cm ³ can be generated in the diamond. Lt. According to the technical teaching of EP 0 014 528 B1, the irradiated diamond is then heat-treated at a temperature of 1600 ° C. to 2200 ° C. under a pressure at which the diamond is crystallographically stable at the temperature used.

A method for generating a high NV center density in diamond is known from EP 0 275 063 A2, in which the dimant is irradiated with high-energy electrons and then annealed at a temperature between 500 ° C. and a pressure less than 1 Torr.

A method for producing a red diamond is known from EP 0 615 954 A1. The method of EP 0 615 954 A1 comprises the steps:

1. Production of a synthetic diamond crystal which contains at least 1 × 10 ¹⁷ and less than 4 × 10 ¹⁸ atoms / cm ³ of type Ib nitrogen and less than 1 × 10 ¹⁸ atoms / cm ³ boron;

2. Irradiation of the diamond crystal with an electron beam at an energy of 1 to 10 MeV in a density range of 2 × 10 ¹⁵ to 5 × 10 ¹⁶ electrons / cm ² or with a

Neutron beam in a density range from 2 x 10 ¹⁵ to 8 x 10 ¹⁷ / cm ² and

3. Annealing the diamond crystal, which is irradiated with the electron beam or the neutron beam, in a vacuum atmosphere or an inert gas atmosphere of not more than 10 ¹ Torr at a temperature of at least 600 ^° C. and less than 800 ^° C. for at least 3 hours.

Irradiation with the electron beam or neutron beam causes radiation damage in the diamond, which can no longer be removed even with the subsequent tempering. Therefore, diamonds treated in this way are typically slightly tarnished. According to the technical teaching of EP 0 615 954 A1, a red dimension produced in this way has an absorption coefficient for type Ib nitrogen at a wavelength of 500 nm of at least 0.1 cm ^-1 and less than 0.2 cm ^-1 and an absorption coefficient caused by an NV center at 570nm, which is at least 0m05 cm ^-1 and less than 1 cm ^-1 . The absorption coefficient of the GR1 center, the H2 center, the H3 center and the H4 center in the visible region are in the case of a red diamond which, according to the technical teaching of

EP 0 615 954 A1, typically smaller than 0.2 cm ^-1 .

RU 2 145 365 CI describes a process for refining diamonds through the action of electron beams and annealing over a period of 30 minutes to several hours before the diamonds acquire certain color shades. The process of RU 2 145 365 CI is characterized according to RU 2 145 365 CI in that the diamonds are subjected to a treatment with electron beams with an integrated electron flow in the range of 5 x 10 ^ls -5 x 10 ¹⁸ cm ² and that the Annealing is carried out either at atmospheric pressure or at atmospheric pressure or in a vacuum or in an atmosphere of inert gases at 300 - 1900 ° C. In the technical teaching of RU 2 145 365 CI, the sequence irradiation - tempering is preferably repeated several times in order to prevent the agglomeration of radiation damage to agglomerations that are no longer dissolvable.

From EP 0 316 856 B1 purple diamonds are known which have absorption coefficients of 0.2-2 cm ^-1 of nitrogen of the Ib type at 500 nm and 0.3-10 cm ^{-1 of} the NV center at 570 nm, these diamonds have an absorption coefficient of less than 0.2 cm ^{-1 of} the GR1, H2, H3 and H4 centers in the visible range. In the method according to the technical teaching of EP 0 316 856 B1 for the production of purple diamonds, an artificial synthetic diamond crystal of the Ib type with an Ib nitrogen content of the crystal in the range from 8 × 10 ¹⁷ to 1.4 × 10 ¹⁹ atoms / cm ^{3 is} used , the crystal being one

Electron irradiation of 5 x 10 ¹⁶ - 2 x 10 ¹⁸ electrons / cm ² at 2 - 4 MeV and one

Tempering process at a temperature of 800 - 1100 ° C is subjected. According to the technical teaching of EP 0 316 856 B1, the process is characterized in that the tempering process is carried out in a vacuum of less than 1.33 Pa (IO ^-2 Torr) for more than 25 hours, that is to say for a very long time. It is also known from EP 0 316 856 B1 that further irradiation with electrons and further tempering steps can follow, if necessary, after the curing by means of a tempering step. A method for forming color centers in diamond is known from RU 2015 132 335 A. The procedure of RU 2015 132 335 A includes the irradiation of the diamonds. Lt. According to the technical teaching of RU 2015 132 335 A, the diamonds should have a uniform volume distribution of A-aggregates with a concentration of at least 10 ¹⁸ cm ³ . According to RU 2015 132 335 A, the ionizing radiation used for irradiation should have an energy of at least 1 MeV at a dose of 100-120 ppm / cm ² per A unit. Lt. of RU 2015 132 335 A, the technical teaching of RU 2015 132 335 A is characterized by the fact that the irradiation with intermediate annealing at a temperature of 850-900 K is carried out repeatedly until the desired concentration of color centers is achieved, followed by tempering Diamonds in an inert medium at a temperature of 1200-2000 K for 0.5-2 hours. The intermediate tempering already improves the healing of the radiation damage, but cannot prevent the damage from accumulating and the diamond becoming cloudy.

From EP 1 645 664 A1 a method for producing fancy red diamonds with stable coloring centers which absorb in the range of wavelengths from 400 to 640 nm is known. The method of EP 1 645 664 A1 is based on irradiating the diamonds with a

Electron flow and curing at a temperature of at least 1100 ° C in a vacuum. The method of EP 1 645 664 A1 is distinguished, according to EP 1 645 664 A1, in that

Natural diamonds of the type la are used and that isolated nitrogen atoms are formed in the substitution position of the depletion type C in the crystal lattice of these natural diamonds. According to the technical teaching of EP 1 645 664 A1, this is done by high-temperature processing in a high-pressure device at a temperature of more than 2150 ° C. and at a stabilized pressure of 6.0-7.0 Gpa, which is carried out before the irradiation a high-energy electron flow with a dose of 5xl0 ¹⁵ - 5xl0 ¹⁸ cm ² at 2-4 MV using diamonds that contain depletion type A, or by a high-energy electron flow with a dose of more than 10 ¹⁹ cm ² using natural diamonds a high nitrogen content, which contain more than 800 ppm nitrogen admixture as depletion types A and B 1

Contained nitrogen admixture as depletion types A and B 1.

A method for producing NV centers in CVD diamond material is known from US Pat. No. 8,986,646 B2. The method of US 8 986 646 B2 comprises according to the technical teaching of

No. 8,986,646 B2 the irradiation of the diamond material and the subsequent tempering of the diamond material. Lt. of the technical teaching of US Pat. No. 8,986,646 B2 is the Diamond material which is irradiated to be single crystal diamond material which has been grown by means of a CVD process and contains individual substitution nitrogen atoms (N _s 0). The

Diamond material according to US Pat. No. 8,986,646 B2 has an absorption spectrum with an integrated total absorption in the visible range from 350 nm to 750 nm, in which at least 10% of the integrated absorption is due to absorption by N _s 0. The irradiation occurs to create isolated voids V in the CVD diamond material. The concentration of the isolated voids in the irradiated diamond material after the irradiation according to US Pat. No. 8,986,646 B2 is at least 0.05 ppm and at most 1 ppm, on the one hand to provide sufficient voids for the formation of the NV centers and on the other hand to agglomerate the voids to avoid larger complexes. The technical teaching of US 8 986 646 B2 provides a

subsequent annealing of the irradiated diamond material to form NV centers from at least some of the individual substitution nitrogen defects (N _s 0) and the introduced isolated voids. According to the technical teaching of US Pat. No. 8,986,646 B2, the treated CVD diamond material has the following properties after the irradiation and annealing steps (i) and (ii):

[V ° GR1 <0.3 ppm, [V] ND1 <0.3 ppm, [N _S 0] <1.5 ppm, [V-chains] <20 cm ^_1 at 250 nm,

[NV]> 10 ¹² cm ^-3 . The technical teaching of US Pat. No. 8,986,646 B2 provides a tempering temperature of 1600 ° C.

A method for changing the color of a diamond is known from US Pat. No. 8,961,920 B1. The method of US Pat. No. 8,961,920 B1 begins with the identification of a nitrogen content of a

Let diamonds of the type wherein the diamond is initially of a first color. According to the technical teaching of US Pat. No. 8,961,920 B1, the diamond is processed in a high pressure / high temperature press ("HPHT") under diamond-stable conditions in order to change the color of the diamond from the first color to a second color, that of yellow consists. According to the technical teaching of US Pat. No. 8,961,920 B1, the diamond is then irradiated with electrons with an energy between approximately 1 MeV and approximately 20 MeV in order to change the color of the diamond from the second color to a third color, the bluish-greenish color is. Finally, in accordance with the technical teaching of US Pat. No. 8,961,920 B1, the diamond is tempered at a temperature of less than 1100 ° C. and under vacuum or a pressure of not more than about 500 kPa in order to change the color of the diamond from the third color change a fourth color which is red, pink, or purple. Irradiation with the electron beam causes radiation damage to the Diamonds that cannot be removed even with the subsequent tempering. Therefore, diamonds treated in this way are typically slightly tarnished.

A method for producing luminescent diamond particles is known from US Pat. No. 8,168,413 B2 which comprises irradiating diamond particles with an ion beam. According to the technical teaching of US Pat. No. 8,168,413 B2, the diamond particles have a diameter of 1 nm to 1 mm and 5 ppm to 1000 ppm of color centers. According to the technical teaching of US Pat. No. 8,168,413 B2, the ion beam has a kinetic energy of 1 keV to 900 MeV. According to the technical teaching of US Pat. No. 8,168,413 B2, the irradiation is followed by heating of the irradiated diamond particles in a non-oxidizing atmosphere to a temperature between 600 and 1000 ° C. and the surface of the luminescent diamond particles to be oxidized. By irradiating with the

Electron beams cause radiation damage in the diamond, which can no longer be removed even with the subsequent tempering. Therefore, diamonds treated in this way are typically slightly tarnished.

A method for changing the color of a diamond is known from EP 1 097 107 B1. According to the technical teaching of EP 1 097 107 B1, the method comprises exposing the diamond to radiation with an energy that is suitable for photonuclear

To cause transmutation of selected atoms to other atoms. According to the technical teaching of EP 1 097 107 B1, this energy is selected in such a way that a giant dipole resonance (GDR) is excited in the diamond. According to the technical teaching of EP 1 097 107 B1, the irradiation is such that either: (1) transmutations of carbon atoms to boron atoms are caused, giving the diamond a blue color or (2) in the case of a nitrogen-containing, yellow diamond, that it causes transmutations from nitrogen atoms to carbon atoms, thereby reducing the yellow color of the diamond. Furthermore, according to the technical teaching of EP 1 097 107 B1, the method of

EP 1 097 107 B1 the reduction of radiation damage in the diamond by cooling the diamond in order to restore the diamond crystal lattice, the change in color due to the transmutation of EP 1 097 107 B1 remaining unaffected. A red color was not reported here in EP 1 097 107 B1.

JPH 0 536 399 B2 discloses a method for coloring diamonds blue by means of a

Electron beam and water cooling known during irradiation. From US Pat. No. 5,637,878 A, a method for coloring jewelry diamonds is known in which the jewelry diamond blanks are irradiated with an electron beam. The method of US 5 637 878 A for electron beam irradiation of gemstones for color improvement comprises the steps:

1. placing the gemstones in a vibrating means provided with a coolant;

2. circulating a coolant through the coolant device;

3. Initiate an oscillating movement along a horizontal y-axis in the

oscillating means;

4. Directing an oscillating electron beam generated by an electron beam source with a power of about 10 kW to about 500 kW at the gemstones, the oscillating electron beam running along a z-axis;

5. Maintaining coolant circulation through the coolant until the gemstones have cooled to ambient temperature; and

6. Remove the evenly colored gemstones.

The technical teaching of US Pat. No. 5,637,878 A also discloses a preferred one

Electron energy from 3 MeV to 5 MeV.

From CN 107 840 331 A a method for diamond modification is known that according to the

CN 107 840 331 A is characterized in that the method of CN 107 840 331 A comprises treating the diamond with a radiation beam comprising protons, wherein the energy difference between the highest energy and the lowest energy of the protons comprises at least 5 MeV. Lt. According to the technical teaching of CN 107 840 331 A, cosmic radiation is used as a radiation source at a height of at least 20 km.

A healing process is known from US 2009 0 110 626 A1 in which the diamond is very quickly brought to a high temperature of approx. 2200 ° C. under high pressure.

From US 7 604 846 B2 is a color change of diamonds by means of ion bombardment and

subsequent annealing known, which has the problems of the prior art already discussed.

The processes for the artificial production of red diamonds have in common that they are usually irradiated with ionizing radiation and then in a subsequent step an attempt is made to repair the radiation damage in the diamond blank again by means of a heat treatment which may also take place under high pressure. This procedure has the massive disadvantage that defects form in the diamond crystal during high-energy radiation. These tend to aggregate into larger complexes, which then go along with the

subsequent heat treatment can no longer be resolved.

As described above, attempts have been made to prevent this agglomeration of the defects into larger complexes by cyclically repeated irradiation and subsequent curing. However, this can only be partially successful.

This agglomeration of the imperfections leads to a clouding of the jewelry diamonds and thus to a deficiency with regard to the so-called "clarity" of the jewelry diamonds. Such stones are called "cloudy" and their value is reduced due to the reduced optical brilliance. From the text M. Capelli, A.H. Heffernan, T. Ohshima, H. Abe, J. Jeske, A. Hope, A.D. Greentree, P. Reineck, B.C. Gibson, Increased nitrogen-vacancy center creation yield in diamond through electron beam Irradiation at high temperature, Carbon (2018), doi: https://doi.org/10.1016/ j. carbon.2018.11.051 an increase in the yield of NV centers is known, but this is not yet sufficient.

On the state of the art of reading out and controlling quantum bits

From the text Gurudev Dutt, Liang Jiang, Jeronimo R. Maze, AS Zibrov "Quantum Register Based on Individual Electronic and Nuclear Spin Qubits in Diamond", Science, Vol. 316, 1312-1316, June 01, 2007, DOI: 10.1126 / science .1139831 a method for coupling the nuclear spin of C ¹³ nuclei with the electron spins of the electron configuration of NV centers is known.

From the text Thiago P. Mayer Alegre, Antonio C. Torrezan de Souza, Gilberto Medeiros-Ribeiro, "Microstrip resonator for microwaves with controllable polarization", arXiv: 0708.0777v2 [condmat.other] 11.10.2007 is a cruciform electrically conductive one Reference is made to Figure 2. One application of the cross-shaped microwave resonator named by the authors in the first section of the work is the control of paramagnetic centers by means of optically detected magnetic resonance (OMDR). A dedicated application is quantum information processing (QIP). The substrate of the The electrically conductive microwave resonator is a PCB (= printed circuit board). The

The dimensions of the resonator are 5.5 cm in the order of magnitude of the wavelength of the microwave radiation to be coupled in. The microwave resonator is by means of

Voltage control fed. The two bars of the resonator cross are electrical

connected with each other. A selective control of individual paramagnetic centers (NV1) with simultaneous non-control of other paramagnetic centers (NV1) is with the technical teaching of Thiago P. Mayer Alegre, Antonio C. Torrezan de Souza, Gilberto Medeiros-Ribeiro, "Microstrip resonator for microwaves with controllable polarization ", arXiv: 0708.0777v2 [cond- mat.other] 11.10.2007 not possible.

From the publication Benjamin Smeltzer, Jean McIntyre, Lilian Childress "Robust control of individual nuclear spins in diamond", Phys. Rev. A 80, 050302 (R) - 25 November 2009 is a method for accessing individual nuclear ¹³ C spins by means of NV cents known in diamond.

From the text Petr Siyushev, Milos Nesladek, Emilie Bourgeois, Michal Gulka, Jaroslav Hruby, Takashi Yamamoto, Michael Trupke, Tokuyuki Teraji, Junichi Isoya, Fedor Jelezko, “Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond "Science 15 Feb 2019, Vol. 363, Issue 6428, pp. 728-731, DOI: 10.1126 / science. Aav2789, the electronic readout of spin states of NV centers is known.

From the text Timothy J. Proctor, Erika Andersson, Viv Kendon "Universal quantum computation by the unitary control of ancilla qubits and using a fixed ancilla-register interaction", Phys. Rev. A 88, 042330 -24 Oct. 2013 is a method known for the use of so-called Ancilla quantum bits in order to entangle a first nuclear spin with a second nuclear spin by means of Ancilla bits.

On the state of the art of magnetometers with NV centers

From WO 2016 083 140 Al a method for measuring the magnetic field with a

Ramp method and with control of the quantum bit by means of microwave known. From US 9 910 105 B2 is the measurement of magnetic fields with Zeeman splitting and

Known microwave control. From US 9 541 610 B2 a magnetic field sensor is also known which uses microwaves to control the quantum dots. From US 9 551 763 B1 a magnetic field sensor with a 4-sided antenna is known, which also uses microwaves. From US 10 408 889 B2 a controller for a magnetic field sensor for controlling the microwaves is known. US Pat. No. 10 120 039 B2 also discloses a magnetic field sensor with microwave control known. From US 10 168 393 B2 a magnetic field sensor with microwave control with the aid of a bias magnet is known. A magnetic field sensor with microwave control is also known from US 10 241 158 B2. From US 10 345 396 B2, US 10 359 479 B2, US 8 547 090 B2, US 9 557 391 B2, US 9 829 545 B2, US 9 910 104 B2 and the

Magnetic field sensors with radio wave control are known from US 10 408 890 B2. From the

US Pat. No. 9 222 887 B2 discloses a magnetic field sensor with nanoparticles and a microwave control. Magnetic field sensors with microwave control are also known from US Pat. No. 9,632,045 B2 and US Pat. No. 9,658,301 B2. From US Pat. No. 9,664,767 B2, a method for manipulating NV center spins with Walsh reconstruction based on microwave control is known. From US 10 007 885 B1 a measurement by means of entanglement and pertubation pulses is known. A magnetic field measurement with an AFM tip is known from WO 2018 169 997 A1.

A magnetic field sensor with two photodetectors is known from US 10 006 973 B2. The

The device of US 10 006 973 B2 comprises according to its technical teaching a diamond arrangement with a diamond with one or more nitrogen vacancies, a light-emitting diode which is configured to emit light in the direction of the diamond, a first photosensor which is configured to a first Detect a portion of the light emitted by the light emitting diode, a second photosensor configured to detect a second portion of the light emitted by the light emitting diode, and a processor operatively coupled to the first photosensor and a second photosensor. According to the technical teaching of US 10 006 973 B2, the first part of the light does not migrate through the diamond, while the second part of the light migrates through the diamond according to the technical teaching of US 10 006 973 B2. In US 10 006 973 B2 the processor is configured to compare a first signal received from the first photosensor with a second signal received from the second photosensor and, based on the comparison of the first signal and the second signal, to determine the strength of a signal applied to the diamond

To determine the magnetic field. Similar constructions are from US 9 720 055 Bl, the

US 9 817 081 B2 and US 9 823 314 B2 are known which use three optical sensors.

From US 10 012 704 B2 a magnetic field measurement with an inductive conductor loop with resistance is known. The technical teaching of US 10 012 704 B2 discloses a diamond nitrogen vacancy sensor, a diamond with one or more nitrogen vacancies, a loop of conductive material, which is positioned next to a part of the diamond and a resistor that is connected to a first End of the loop and a second end of the loop is coupled comprises wherein the loop and the resistor form a low pass filter for the DNV sensor. The resistance can be modified by a control device or a regulator.

From US 8 947 080 B2 a magnetic field sensor is known that detects the Zeeman shift.

A nanoparticle-diamond-metal compound is known from US Pat. No. 9 599 562 B2 which comprises a diamond nanoparticle with a nitrogen vacancy center and a metallic nanostructure. The diamond nanoparticle has a predetermined radius and is preferably at least partially bound directly to a layer of the metallic nanostructure. The

In the technical teaching of US Pat. No. 9 599 562 B2, the nitrogen vacancy center is arranged at a distance that is based at least in part on the predetermined radius of the diamond nanoparticle.

A method for measuring a borehole is known from US Pat. No. 9,638,821 B2.

None of the documents listed above allow the use of a microwave-free and radio-wave-free sensor system that does not require alignment of the diamond crystal.

The combination of features of the document presented here with features of the patent literature and non-patent literature mentioned in this document is an express part of the disclosure and, insofar as this is permissible in the legal system of the later nationalization state of this international application, part of the claim.

task

The proposal is therefore based on the object of creating a solution which does not have the above disadvantages of the prior art and has further advantages.

This document reveals various measures which, taken together, contribute to a significant improvement.

This object is achieved by a device according to claims 1 and 2. Further developments of the invention and related subject areas are the subject of the independent and subordinate claims.

Solution of the task

The invention comprises all essential components of a quantum sensor system based on one or more NV centers or one or more groups of NV centers and methods for its production and operation.

General idea

To detect object positions and / or changes in position, for example from

mechanical oscillations of an oscillating system (MS), for example, suggests the method presented here, the object, for example the mechanically oscillating system (MS), with a magnetic field in the form of the magnetic flux density B or an electric field in the form of the electric field strength E. to couple and to determine the instantaneous value of the magnetic flux density B or an electrical flux density D which changes over time by means of a sensor based on quantum mechanical effects.

According to the invention, it was recognized in particular that such quantum mechanical

Sensor systems, which are preferably based on the measurement of the fluorescence radiation (FL) of paramagnetic centers (NV1), are typically also suitable for the measurement of an electric field with an electric field strength E, in particular changing over time, if the source of the electric field strength E is opposite the paramagnetic centers ( NV1) of the sensor system is moved. Such a movement results in a rotation and distortion of the four-dimensional electromagnetic field strength tensor Fy in the four-dimensional Minkowski space, which transforms the electrical field strength E into a magnetic flux density B and thus for makes such sensor systems based on the detection of the magnetic flux density B detectable.

The sensor element or parts of the sensor element are preferably diamonds with a preferably at least locally very high density of paramagnetic centers (NV1) in the form of NV centers in order to ensure a high signal-to-noise ratio and a quantum mechanical coupling between these paramagnetic centers ( NV1). Such FID-NV diamonds with a high density of paramagnetic centers (NV1), especially NV centers, are discussed below. For example, the diffusion constant for foreign atoms in diamond is almost zero. These sensor systems with sensor elements that include diamond thus have the advantage that no aging phenomena are to be expected for the paramagnetic centers (NV1). The high hardness of diamond ensures the possibility of high mechanical stress without having to fear damage to the sensor element through abrasion, etc. The diamond sensor element can thus be brought into direct contact with mechanically wearing materials. For example, direct, permanent contact with a hot salt water / gas / oil / sand mixture under high pressure, as occurs in boreholes, is possible. A high density of paramagnetic centers (NV1), here NV centers, typically gives a diamond in question, which is particularly suitable as a sensor element, a red to deep red or black color. If such an HD-NV diamond is illuminated, for example, with green light as pump radiation (LB), the diamond glows due to the fluorescence radiation (FL)

paramagnetic NV centers (NV1) red. Such a diamond of such a sensor system can be made with a brilliant cut as a gemstone. For musical instruments such as electric guitars, the sensor system structure is preferably designed in such a way that only the diamond, which shines red during operation, is clearly visible in order to evoke a corresponding emotional, positive experience in a viewer. The use of jewelry diamonds as a

Sensor elements is part of this disclosure.

Manufacture of HD NV diamonds with a high density of NV centers

The invention therefore firstly comprises a method for producing diamonds or a diamond with an at least locally high concentration of NV centers for later use as a sensor element in the sensor systems to be produced. This method is therefore of great importance

Importance. The term "local" is intended to denote a spatial volume as a reference volume within the diamond that is greater than half the pump radiation _wavelength (1 _rGhr ) Pump radiation (LB) to the third power, since otherwise any concentration could be achieved with a single NV center. Such diamonds are referred to here and below as HD-NV diamonds. The sensor element is a very important part of the sensor system and thus its foundation. The method first comprises the step of providing the diamond as a diamond blank or the diamonds as diamond blanks. It can be a single diamond or a multitude of diamonds. The diamonds can be large or small. The diamonds can also be in powder form or as granules. The diamonds can also be nanocrystalline.

From M. Capelli, A.H. Fleffernan, T. Ohshima, H. Abe, J. Jeske, A. Flope, A.D. Greentree, P. Reineck, B.C. Gibson, Increased nitrogen-vacancy center creation yield in diamond through electron beam

Irradiation at high temperature, Carbon (2018), doi: https://doi.Org/10.1016/ j.carbon.2018.ll.051 it is known that the NV center yield in CVD diamond can be increased by heating during a

Electron irradiation with 2MeV electrons at 710 ° C can be increased by a factor of 2.

The technical teaching of the as yet unpublished at the time of registration

DE 10 2019 117 423.6 describes a method for further increasing the yield of NV centers, which describes a way of producing the HD-NV diamonds. These diamonds, in particular those with an NV center density of more than 10 ppm per unit volume, are referred to below as HD-NV diamonds. It has been shown that a content greater than 20ppm is better. The content can be determined, for example, by means of EPR (electromagnetic parametric resonance) measurement. Again, we refer to M. Capelli, A.H. Heffernan, T. Ohshima, H. Abe, J. Jeske, A. Hope, A.D. Greentree, P. Reineck, B.C. Gibson, Increased nitrogen-vacancy center creation yield in diamond through electron beam Irradiation at high temperature, Carbon (2018), doi: https://doi.Org/10.1016/ j.carbon.2018.ll.051.

With such diamonds, a sensor system with a sensor element can be constructed, in which the sensor element comprises a substrate (D) or can be the same as this substrate (D). A spatial volume can be selected in the substrate (D), the substrate (D) comprising a group (NVC) of paramagnetic centers (NV1) with at least two paramagnetic centers (NV1) in this spatial volume. The sensor system includes first means (G, PLI), explained in more detail later, for exciting fluorescence radiation (FL) of this group (NVC) of paramagnetic centers (NV1). The

Fluorescence radiation (FL) has a fluorescence wavelength (lh). The sensor system also includes second means (G, Fl, PD, Ml, TP) for detecting and evaluating the Fluorescence radiation (FL). When assessing whether an FID-NV diamond is used, the external dimensions of the selected volume should not exceed twice the fluorescence wavelength (lh). Using the first and second means (G, PLI, Fl, PD, Ml, TP), the sensor system generates one or more measured values and / or maintains or holds these values as a function of the fluorescence radiation (FL) of this group (NVC) of paramagnetic centers (NV1) this ready. The

Fluorescence radiation (FL) depends on a physical parameter. This can include the magnetic flux density B, the electrical flux density D, the acceleration a, the

Gravitational field strength g, the speed of rotation co, oscillation frequencies co, the modulation of electromagnetic radiation, the intensity of ionizing radiation, the temperature q and the like, as well as their simple and multiple time integrals and derivatives. The measured value then also depends on the physical parameter. Therefore, this determined measured value can then be used as the measured value of this physical parameter. The device proposed here is characterized by the fact that the concentration of the paramagnetic centers (NV1) of this group (NVC) in the volume is on average greater than 100 ppm and / or 50 ppm and / or 20 ppm and / or 10 ppm and / or 5 ppm and / or 2ppm and / or lppm and / or 0.5ppm and / or 0.2ppm and / or 0, lppm and / or greater than 0.01ppm and / or greater than 0.001ppm and / or greater than 0.0001ppm and / or is greater than 0.0001ppm based on the number of atoms of the substrate (D) per unit volume in this volume of space. It is particularly preferably greater than 10 ppm or, better still, 20 ppm.

Instead of optical readout using fluorescence radiation (FL), electronic readout using photoelectrons is always possible.

For this purpose of electronically reading out the photoelectrons generated by the irradiation with pump radiation (LB), the following alternative sensor device is proposed.

Such a sensor system with electronic readout comprises a sensor element, wherein the sensor element again comprises a substrate (D) or can be the same as this substrate (D) and wherein the spatial volume in the substrate (D) can again be selected and the substrate (D) in this volume of space comprises a group (NVC) of paramagnetic centers (NV1). Again, the sensor system comprises first means (G, PLI) for exciting a photocurrent of the photoelectrons of this group (NVC) of paramagnetic centers (NV1) by means of a pump radiation (LB) with a

_Pump radiation _wavelength (l _rigir ). In contrast to what was proposed immediately before The sensor system comprises the sensor system second means (G, Ml, TP) for detecting and evaluating the photocurrent of the photoelectrons of this group (NVC) of paramagnetic centers (NV1). The external dimensions of the chosen room volume should now double

_Do not exceed the pump radiation _wavelength (l _rigir ). The sensor system uses the first and second means (G, PLI, Ml, TP) to generate a measured value or several measured values as a function of the photocurrent and / or keeps them ready. The photocurrent also depends on a physical parameter here. This can include the magnetic flux density B, the electrical flux density D, the acceleration a, the gravitational field strength g, the

Rotation speed co, oscillation frequencies co, the modulation of electromagnetic radiation, the intensity of ionizing radiation, the temperature q and the like, as well as their simple and multiple time integrals and derivatives. The measured value therefore also depends on the physical parameter. As before, the measured value is preferably used as the measured value of this physical parameter. Here, too, the device is characterized by the fact that the concentration of the paramagnetic centers (NV1) of this group (NVC) in the volume of space is on average 100 ppm and / or 50 ppm and / or 20 ppm and / or 10 ppm and / or 5 ppm and / or 2 ppm and / or lppm and / or 0.5ppm and / or 0.2ppm and / or greater than 0, lppm and / or greater than 0.01ppm and / or greater than 0.001ppm and / or greater than

0.0001ppm and / or greater than 0.0001ppm based on the number of atoms of the substrate (D) per unit volume in this volume of space. Here, too, it is particularly preferably greater than 10 ppm or, better, 20 ppm.

So that the diamonds can later develop NV centers, they should have nitrogen atoms, preferably in the form of PI centers. To put it simply, the diamonds should preferably be yellow or yellowish. The diamonds should therefore preferably have a yellow color before irradiation, preferably the color "fancy yellow" or "fancy deep yellow" according to the GIA standard by John M. King "Colored Diamonds, colored reference chart". Diamonds of the GIA classification or "fancy light yellow" are less preferred, as they contain less nitrogen and accordingly lead to diamonds with a lower density of NV centers. The stronger the yellowish color, the more densely the NV centers are later concentrated in the diamonds. The diamond blank or the diamond blanks less preferably comprise nitrogen atoms together with hydrogen, since this has a compensating effect. Such diamonds can also be used if necessary will. N-doping with sulfur can also lead to an increase in the yield of NV centers.

The diamonds used here are preferably synthetic HPHT diamond. HPHT stands for High Pressure High Temperature, which means high pressure and high temperature. It is therefore clear to the person skilled in the art that such diamonds were not produced in a metastable manner, for example not by plasma deposition (CVD diamond). Such HPHT diamonds contain little hydrogen, which experience has shown is typically not helpful for the formation of NV centers. The method described here has the advantage that the diamonds can be ground before the process of generating NV centers. If an error occurs, this material can be discarded inexpensively before treatment. A proposed diamond can therefore have at least one or more ground surfaces, for example an optical surface in the form of a first surface (OGL1) for the entry and / or exit of radiation, even before the irradiation. The diamond material irradiated in an irradiation pass described below can be a single diamond as well as a plurality of

Trade diamonds. The diamonds can be large or small. The diamonds can be in

Powder form or as granules or else individually. The diamonds can also be nanocrystalline. The use of synthetic CVD diamonds is also possible. CVD

However, diamonds have a larger amount of hydrogen, which hinders the formation of NV centers. When working out the invention, it was possible to produce such NV centers in CVD diamonds by means of the proposed irradiation process. In this respect, this variant is also claimed here, although it is not optimal. In this variant, the diamond or diamonds then comprise nitrogen atoms together with hydrogen. Typically they are then not yellow in color, but are often transparent because the hydrogen changes the spectral colors.

The central step in processing the diamonds is irradiation with high-energy particles. High-energy electrons are preferably used. Irradiation with protons, neutrons and helium nuclei is also conceivable and possible.

Because of the high temperature of the diamonds, this irradiation preferably does not take place in air or oxygen during the irradiation, since the diamond would then oxidize to CO ₂ . The irradiation is preferably carried out in a vacuum with a residual pressure of less than 10 ^s mbar. Instead, however, such irradiations have already been carried out in a protective gas atmosphere, in particular in an agon atmosphere, but this is not preferred. During the irradiation with particles, preferably electrons, the diamond blanks are thermally coupled to a heat sink via a thermal resistor. During the irradiation, the diamond blanks are kept at the desired process temperature by a temperature control device by a controller that is part of the temperature control device. The controller for regulating the temperature of the diamonds during the irradiation can be, for example, a PI controller or the like. The temperature control device preferably takes into account all energy inputs during the irradiation. The temperature control device can preferably have one or more

Regulate thermal energy flows into the amount of diamond blanks to be machined and / or out of the amount of diamond blanks depending on the target and measured mean irradiation temperature of the diamond blanks.

The temperature control device thus preferably regulates the total energy input into the diamond blanks and possibly the total energy dissipation in such a way that the one temperature probe located in the vicinity of the

Diamond blanks is placed during the irradiation, an average irradiation temperature of the diamond blanks of greater than 600 ° C and / or greater than 700 ° C and / or greater than 800 ° C and less than 900 ° C and / or less than 1000 ° C and / or less than 1100 ° C and / or less than 1200 ° C, very particularly preferably between 800 ° C and 900 ° C. Preferably includes for this scheme

Temperature control device a PD, P or better PID controller.

The total energy input is preferably not constant. Preferably the the

Total energy input into the diamond blanks has a temporal constant component and, in contrast to the prior art, a temporally pulsed component with a temporal pulse interval and a pulse height of the total energy input pulses. The total energy pulses can also be just a single pulse. The temperature control device can then use the constant component and / or the pulse height of the total energy input pulses of the total energy input and / or the time interval between the total energy input pulses to regulate the mean irradiation temperature detected by the temperature probe. If necessary, a heater can thus be provided, for example, which for the pulse duration of a total energy input pulse

Total energy input increases, which results in a rise in temperature and improves the healing of radiation damage. The total energy input is made up of the energy from a possibly active heating device, the thermal energy derived via the thermal discharge resistor and the more or less permanent beam power of the electron beam during the irradiation. The temperature control device must do this when setting the middle Consider target temperature. Each of the aforementioned components of the total energy input can be used for the proposed regulation.

It makes sense to give the diamonds a familiar cut, as they then give the sensor a more noble appearance in the form of a jewelery diamond for use as a sensor element in consumer applications. Such a diamond can, for example, have one of the following cuts before irradiation: Pointed stone cut, table stone cut, rose cut cut, Mazarin cut, brilliant cut, pear cut, princess cut, oval cut, heart cut, marquise cut, emerald cut, Asscher cut, cushion cut, radiant -Cut, old diamond cut, emerald cut or baguette cut. In the case of granules, the diamonds are preferably smaller than 1mm and / or smaller than 0.5mm and / or smaller than 0.2mm and / or smaller than 0.1mm and / or smaller than 50pm and / or smaller than 20pm and / or less than 10pm and / or less than 5pm and / or less than 2pm and / or less than 1pm and / or less than 0.5pm and / or less than 0.2pm and / or less than 0.1pm, with which the granules then is a powder. The diamonds of such granules can also be on average smaller than 1mm and / or smaller than 0.5mm and / or smaller than 0.2mm and / or smaller than 0.1mm and / or smaller than 50pm and / or smaller than 20pm and / or less than 10pm and / or less than 5pm and / or less than 2pm and / or less than 1pm and / or less than 0.5pm and / or less than 0.2pm and / or less than 0.1pm. If a sensor element is to consist of a large number of diamonds, then very small dimensions make sense, since the properties of such a diamond powder are usually isotropic, i.e. not direction-dependent, which can be intended in order to obtain a direction-independent sensitivity of the sensor system. In order to manufacture the sensor element, the diamonds are then combined with a

mixed with transparent carrier material (TM), which then solidifies to form the sensor element. We refer here to the as yet unpublished international patent application PCT DE 2020 100 430. UHU and gelatine and glass, in particular a glass frit, are mentioned here as exemplary carrier materials. In the solidified state, the carrier material (TM) is typically transparent to the pump radiation (LB) and the fluorescent radiation (FL). If, for example, a magnetic flux density B is to be detected by means of the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1), the carrier material (TM) shields the

paramagnetic centers (NV1) of the sensor element preferably not against the action of this physical variable to be detected, here the magnetic flux B. In another way, it may be desirable to use a single crystal, for example a diamond crystal, as a sensor element and to align this single crystal precisely in the housing of the sensor system to detect special resonances (eg GSLAC) in order to make these special features measurable. In that case it can be useful to have a larger crystal than a single one

Use sensor element.

As already indicated, the preferred method for producing diamonds with a high NV center density is to irradiate the diamond and / or the diamonds with particles of high energy.

The irradiation preferably takes place in a quartz vessel in which the diamonds are then placed in the form of diamond blanks for the irradiation. The quartz vessel is preferably open at the top for the entry of the particle beam. A temperature sensor, for example a thermocouple, is preferably introduced into the diamonds or on the diamonds during the irradiation, in order to obtain an actual temperature value for regulating the processing temperature of the diamonds during the irradiation.

The diamond or the diamonds are preferably irradiated with electrons, since these can penetrate the diamonds completely and fairly homogeneously with a sufficiently high energy. The energy of the electrons of the electron beam is preferably greater than 500keV and / or greater than IMeV and / or greater than 3MeV and / or greater than 4MeV and / or greater than 5MeV and / or greater than 6 MeV and / or greater than 7 MeV and / or greater than 9 MeV and / or greater than 10 MeV and / or greater than 10 MeV, an energy of IOMeV currently being clearly most preferred as the optimum in the system used to develop the invention. An energy of the particles of more than 20 MeV should be avoided, as otherwise radioactive activation of the diamond material can occur. The irradiation dose for this irradiation with electrons is preferably between 5 * 10 ¹⁷ cm ² and 2 * 10 ¹⁸ cm ² , but at least below 10 ¹⁹ cm ² . It is important that the temperature of the diamond or diamonds during the irradiation with these electrons is controlled by temperature control at a temperature greater than 600 ° C. and / or greater than 700 ° C. and / or greater than 800 ° C. and less than 900 ° C. and / or less 1000 ° C and / or less than 1100 ° C and / or less than 1200 ° C. Preferably, however, based on experience in working out this invention, the optimum temperature is between 800 ° C and 900 ° C. With other temperatures, other centers in the diamond are preferred. In the case of temperature control, the heating must be powered by the first heating energy flow of a typically existing external heating and the second Heating energy flow of the typically neglected heating by the

Electron beam current must be observed. The heating by these heating energy flows is offset by the cooling energy flow of the cooling by heat dissipation into a heat sink. The beam current of the electric current of these electrons of the electron beam is now preferably set or regulated in such a way that the irradiation time to achieve the above irradiation dose is at least 0.05 days and / or at least 0.5 days and / or at least 1 day and / or at least 2 Days and / or at least 4 days and / or at least 8 days. During the elaboration, 2 days of irradiation time were used for very successful experiments. Preference is given to the cost of such a system, a pulsed linear accelerator (Linac for "linear accelerator") is used for irradiation with a pulsed electron stream due to the design. The heating energy of the electron beam is determined by the energy of the electrons and the mean beam current.

The heating energy supplied during the irradiation is above said thermal

Leak resistance derived into a heat sink. The total heating energy supplied is preferably controlled by means of a thermal sensor, which detects the temperature of the diamond blanks during the irradiation, and by means of a regulator, which controls one, preferably the essential, heating energy flow so that a desired processing temperature of the diamonds is within a target temperature range around the target temperature around for the diamond blanks during the

Exposure ceases. The regulated flow of heating energy, which heats the diamond blanks during the irradiation, is preferably pulse-modulated in whole or in part, at least temporarily, in whole or in part. This means that it is supplied in heating pulses. This means that it fluctuates, pulsed over time, between a first energy flow value, which is supplied to the diamond blanks in a first period of a temporal pulse period of the pulse modulation, and a second energy flow value, which is supplied to the diamond blanks in a second period of the temporal pulse period of the pulse modulation during the irradiation. The first energy flow value is preferably different from the second energy flow value. Regulation is preferably carried out by setting the

Heating pulse amplitude, the heating pulse width, the heating pulse interval or the duty cycle of the pulse modulation of the heating pulses, i.e. by a method of pulse modulation. The duty cycle is also known as the duty cycle.

With the method described above, depending on the nitrogen and hydrogen content, the

Diamond blanks before irradiation Diamond with a NV center density of more than 500ppm and / or of more than 200ppm and / or of more than 100ppm and / or of more than 50ppm and / or of more than 20ppm and / or of more than lOppm and / or greater than 5ppm and / or of more than 2ppm and / or of more than 1ppm and / or more than 0, lppm and / or more than 0.01ppm and / or of more than 10 ³ ppm and / or of more than 10 ⁴ ppm and / or of more than 10 ⁵ ppm and / or of more than 10 ⁶ ppm based on the number of carbon atoms per unit volume. Such diamonds are particularly suitable as sensor elements of the proposed devices and for other quantum technological devices.

During irradiation, the pulsation of the electron beam, which is typically unavoidable specifically for LINAC, and thus also its fleece energy, is preferably stabilized by a control system in order to achieve predictable results. Instead of irradiation with electrons, the

Irradiation with protons or flelium nuclei or other particles, e.g. neutrons

be made, which then only superficially provide the diamond with NV centers because of the lower penetration depth, which can be advantageous. Such a diamond then shows, regardless of the type of particles used, traces of irradiation with particles, in particular with electrons and / or protons and / or flelium. In one embodiment, the diamond provided or an epitaxial layer of sufficient thickness on at least one surface of the diamond is preferably isotopically pure. In this context, “isotopically pure” in the sense of this document means that more than 99.5% of the atoms of the diamond can be assigned to a carbon isotope, preferably the nuclear spin-free ¹² C isotope. This leads to fewer disruptive nuclear spins of C ¹³ atoms The thickness of an epitaxial layer is sufficient if the paramagnetic centers (NV1) in this layer behave as if the diamond surrounding them were completely isotopically pure.

Diamonds with a high density of NV centers, as described, are hereinafter referred to as HD NV diamonds.

The high density of the paramagnetic centers (NV1) is preferably only realized in a small volume within the sensor element, for example the diamond, with preferably a high intensity (l _pmp ) of the pump radiation (LB), since the non-linearity of the intensity (l _{f |} ) of the Fluorescence radiation (FL) of the paramagnetic centers (NV1), otherwise would lead to a decrease in the contrast (KT).

Finally, it should be mentioned that the irradiation can only take place locally. For example, if the nitrogen atoms in a diamond are only in If a thin plane has been introduced, the electron beam can only penetrate the crystal along transmission axes which are spaced apart from one another. The same is true for others

Materials and centers are possible if these can be produced by ion implantation followed by electron or particle irradiation. In the example of NV centers in diamond, paramagnetic centers (NV1) then only form at the crossing points between these transmission axes and the layer of implanted nitrogen atoms if the parameters are correctly selected. In this way, for example, superlattices can be formed from groups (NVC) of paramagnetic centers (NVC). Each group (NVC) of paramagnetic centers (NV1) in this

Superlattices represent a material that has a high density of paramagnetic centers (NV1) within the respective group. In the case of groups of NV centers in diamond, the material of the groups of NV centers is thus preferably HD-NV diamond, which preferably has a density of NV centers of more than 10 ppm or better within the respective group than 20ppm.

Definition of pump radiation

The proposed sensor system now preferably uses the HD-NV diamonds produced in this way, each with a high density of NV centers, for example in the form of red jewelry diamonds, as sensor elements for the sensor systems presented below, which measure the intensity (l _fl ) of the fluorescence radiation ( FL) of the NV centers when irradiated with green light as pump radiation (LB). The green light is given in the technical teaching of this document for pumping the

paramagnetic centers (NV1), here typically the NV centers in diamond, are used. Instead of the term “green light”, the equivalent term “green pump radiation (LB)” is also used in this document. The pump radiation (LB) has a pump radiation _wavelength (A _pmp ) of this "green light". The pump radiation (LB) causes the respective paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC)

paramagnetic centers (NV1) for the emission of fluorescent radiation (FL) with a

Fluorescence wavelength (Ä _fl ) when irradiated with the pump radiation (LB) of the

_Pump radiation _wavelength (A _pmp ). Typically, when NV centers in diamond are used as paramagnetic centers (NV1), the fluorescence wavelength (Ä _fl ) of the fluorescence radiation (FL) of the NV centers is such that they appear red. It has been shown that in connection with NV centers in diamond as paramagnetic centers, in principle light with a pump radiation _wavelength (Ä _pmp ) of the pump radiation (LB) of at most 700 nm and at least 500 nm, especially as pump radiation (LB) ie is suitable as a "green light". In connection with the use of other materials for the sensor element and correspondingly different paramagnetic centers, completely different wavelength ranges of the pump radiation wavelength (l _rGhr ) of the pump radiation (LB) can fulfill the same functions in the sensor system then modified in this way. Therefore, the NV centers here represent only one example of an embodiment of such a paramagnetic center (NV1).

In this respect, “green light” or “green pump radiation (LB)” should be understood here as a function definition, the function being understood as being equivalent to the function in the system using NV centers in diamond as paramagnetic centers (NV1) in a sensor element shall be. In particular when using an NV center as a paramagnetic center (NV1), the “green light” or the “green pump radiation” should have a pump radiation wavelength (l _r , _hr ) in a wavelength range of 400 nm to 700 nm and / or better 450 nm to 650 nm and / or better 500 nm to 550 nm and / or better 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength (1 _rGhr ). Light or electromagnetic pump radiation (LB), which when using other

paramagnetic centers (NV1) as used by NV centers in diamond to carry out the same functions is also referred to in this document as "green light" or "green pump radiation". To this extent, such embodiments are encompassed by claims in those of "green light" or "green pump radiation", even if this radiation does not appear to be colored green to a person. The proposed sensor system is therefore also suitable for other suitable paramagnetic centers, such as STI center, SiV center, GeV center, TRI center etc. However, the NV center in diamond is particularly suitable and particularly good to manufacture, for example as described above, and in high density with a high production yield.

The pump radiation (LB) of the pump radiation source (PLI), preferably a laser, is expediently pulsed as a function of a pulsed alternating component (S5w) of a transmission signal (S5). The pulsed alternating component (S5w) of a transmission signal (S5) is used as a measurement signal (M ES) i.e. as a reference signal for a look-in amplifier to convert the modulated electrical currents, in particular photoelectron currents or voltages, for example a

Receiver output signal (SO) converted modulation of the intensity (l _fl ) of the

To amplify fluorescence radiation (FL) with low noise.

According to the invention, it was recognized that the pulsed pulse modulation of the pump radiation (LB) and thus the pulsed pulse modulation of the alternating component (S5w) of the transmission signal (S5) preferably does not 50% duty cycle (English duty cycle) should have. (See FIG. 91) The alternating component (S5w) of the transmission signal (S5) has an amplitude (S5w _A ) of the alternating component (S5w) of the transmission signal (S5). At the beginning of a transmission signal period (T _P ), the value of the transmission signal (S5) is the value of the direct component (S5g) of the transmission signal (S5) minus the value of the amplitude (S5w _A ) of the alternating component (S5w. The value of the transmission signal (S5) increases then to the value from the sum of the value of the amplitude (S5w _A ) of the alternating component (S5w) of the transmission signal (S5) plus the value of the direct component (S5g) of the transmission signal (S5). Then pauses for a transmission signal plateau time (T _{S Pmpp} ) the value of the transmission signal (S5) essentially at this value level, then with a transmission signal _{fall time} (T _{S Pmpd} ) to the value from the difference value of the direct component (S5g) of the transmission signal (S5) minus the value of the amplitude (S5w _A ) des AC component (S5w) of the transmission signal (S5). The value of the transmission signal (S5) then essentially remains at this value until the end of the transmission signal period (T _P ) the value of the transmission signal (S5) then again with a transmission signal _{rise time} (T _S5pmpr ) on the value the sum of the amplitude (S5w _A ) of the alternating component (S5w) of the transmission signal (S5) plus the value of the direct component (S5g) of the transmission signal (S5) increases. The maximum value of the pulses of the alternating component (S5w) of the transmission signal (S5) is preferred in the form of the sum of the amplitude (S5w _A ) of the alternating component (S5w) of the transmission signal (S5) plus the value of the direct component (S5g) of the transmission signal (S5) maximized in order to achieve a maximum intensity (l _pmp ) of the pump radiation (LB) at the times in which the pump radiation source (PLI) emits pump radiation (LB). The purpose of this is that the contrast (KT) (see FIG. 28) does not depend linearly on the intensity (I _pmp ) of the pump radiation (LB) that reaches the paramagnetic centers (NV1) and on high intensities (I _pmp ) of the pump radiation (LB) increases. This is for individual NV centers in diamond, that is not for HD-NV diamonds as described here, for example from the publication Staacke, R., John, R., Wunderlich, R., Horsthemke, L., Knolle , W., Laube, C., Glösekötter, P., Burchard, B., Abel, B., Meijer, J. (2020), "Isotropie Scalar Quantum Sensing of Magnetic Fields for Industrial Application", Adv. Quantum Technol. , doi: 10.1002 / qute.202000037, known. We refer in particular to Figures 3b and 3d of that document. With a high density of paramagnetic centers (NV1), such as, for example, with a high density of NV centers such as in an HD-NV diamond, as described in this document, the contrast (KT) can exceed that shown in that document Measure beyond what is new compared to the state of the art.

The pulse duty factor of the transmission signal (S5) and thus the modulated transmission signal (S5w) is defined here as the transmission signal _{pulse duration} (T _S5pmp ) divided by the transmission signal period (T _P ). Transmission signal _{pulse duration} (T _S5pmp ) plus transmission signal _{complementary time} (T _S5c ) are here equal to the transmission signal period (T _P ).

The alternating component (S5w) of the transmission signal (S5) and thus the transmission signal (S5) with a pulse duty factor of the alternating component (S5w) of the transmission signal (S5) is preferably less than 50% and / or better less 40% and / or better less 30% and / or better less than 20% and / or better less than 10% pulse modulated. It is therefore preferably an ultra-short pulse with the highest possible amplitude.

Accordingly, the modulated transmission signal (S5w) is preferably pulse-modulated with a pulse duty factor of less than 50% and / or better less 40% and / or better less 30% and / or better less 20% and / or better less 10%. It is therefore preferably an ultra-short pulse. This ultrashort pulse is preferably converted with the _greatest possible amplification into a corresponding short, as intense as possible intensity pulse of the intensity (I _pmp ) of the pump radiation (LB).

Since the pump radiation source (PLI) is controlled with the transmission signal (S5), it typically reproduces the transmission signal (S5) with a delay by a transmission delay (At _{| pmp} ). This send delay (At _{| pmp} ) to Os can be used for the calculation of many applications

Simplification will be adopted.

The pump radiation _{pulse duration} (T _{| pmp} ) is defined here such that the intensity _{pulse of} the intensity (l _pmp ) of the pump radiation (LB) has a pump radiation intensity _maximum (l _pmpmax ) and that the pump radiation _{pulse duration} (T _{| pmp} ) of an intensity _pulse of the pump radiation (LB) with the first point in time when 50% of the intensity value of the

_Pump radiation _{intensity maximum} (l _pmpm ax) minus the possibly existing bias value (l _pmp off) of the intensity (l _pmp ) of the pump radiation (LB), through the current intensity (l _pmp ) of the intensity _pulse of the pump radiation (LB) minus the possibly existing bias value (l _pmp0ff ) of the intensity (l _pmp ) of the pump radiation (LB) begins and that the pump radiation _{pulse duration} (T _{| pmp} ) of an intensity _pulse of the pump radiation (LB) with the second point in time of _{falling below} 50% of the

Intensity value of the pump radiation intensity _maximum (l _pmpm ax) minus the possibly existing bias value (l _pmp0ff ) of the intensity (l _pmp ) of the pump radiation (LB), through the current intensity (l _pmp ) of the intensity _pulse of the pump radiation (LB) minus the, if applicable The existing bias value (l _pmp0ff ) of the intensity (l _pmp ) of the pump radiation (LB) ends. The pump radiation _{rise time} (T _{| pmpr} ) of the intensity (l _pmp ) of the pump radiation (LB) is defined here in such a way that the pump radiation _{rise time} (T _{| pmpr} ) of an intensity _pulse of the pump radiation (LB) _starts with the first point in time when 10% of the intensity _{value is} exceeded

_Pump radiation _{intensity maximum} (l _pmpma x) minus the possibly existing bias value (l _pmpoff ) of the intensity (l _pmp ) of the pump radiation (LB), through the current intensity (l _pmp ) of the intensity _pulse of the pump radiation (LB) minus the possibly existing The bias value (l _pmp0ff ) of the intensity (l _pmp ) of the pump radiation (LB) begins and that the pump radiation _{rise time} (T _{| pmpr} ) of an intensity _{pulse of} the pump radiation (LB) starts at the third point in time when 90% of the intensity _value of the pump radiation intensity maximum (l _pmpma x) minus the possibly existing bias value (l _pmp0ff ) of the intensity (l _pmp ) of the pump radiation (LB), through the instantaneous intensity (l _pmp ) of the

Intensity _{pulse of} the pump radiation (LB) minus the possibly existing bias value (l _pmp0ff ) of the intensity (l _pmp ) of the pump radiation (LB) ends.

The pump radiation _{decay time} (T _{| pmpd} ) of the intensity (l _pmp ) of the pump radiation (LB) is defined here in such a way that the pump radiation _{decay time} (T _{| pmpd} ) of an intensity _pulse of the pump radiation (LB) _starts with the first point in time when the intensity _{value falls below} 90% of the

_Pump radiation _{intensity maximum} (l _pmpma x) minus the possibly existing bias value (l _pmp0ff ) of the intensity (l _pmp ) of the pump radiation (LB), through the current intensity (l _pmp ) of the intensity _pulse of the pump radiation (LB) minus the possibly existing Bias value (l _pmp0ff ) of the intensity (l _pmp ) of the pump radiation (LB) begins and that the pump radiation _{decay time} (T _{| pmpd} ) of an intensity _pulse of the pump radiation (LB) with the third point in time at which the intensity _value of the pump radiation intensity maximum (l _pmpma x) minus the possibly existing bias value (l _pmp0ff ) of the intensity (l _pmp ) of the pump radiation (LB), through the instantaneous intensity (l _pmp ) of the

Intensity _{pulse of} the pump radiation (LB) minus the possibly existing bias value (l _pmp0ff ) of the intensity (l _pmp ) of the pump radiation (LB) ends.

For the calculation of many applications, the transmission delay (At _{| pmp} ) can be set to Os and / or the pump radiation _{fall time} (T _{| pmpd} ) to Os and / or the transmit signal _{fall time} (T _S5pmpd ) to Os and / or the pump radiation _{rise time} (T _{| pmpr} ) to Os and / or the transmit signal _{rise time} (T _S5pmpr ) can be assumed to be Os for simplification. The pump radiation _{pulse duration} (T _{| pmp} ) is then equal to the transmission signal _{pulse duration} (T _S5p m _P ) The pump radiation _{pulse duration} (T _{| pmp} ) and the transmission signal _{pulse duration} are then equal to the first times (TI) at which the transmission signal (S5) is active and the pump radiation source (PLI) pump radiation (LB) emitted. The transmit signal _{complementary time} (T _S5c ) and the pump radiation complementary time (T) are, among these simplifications, equal to the second times (T2) at which the transmission signal (S5) is not active and the pump radiation source (PLI) does not emit any pump radiation (LB).

Thus, the first times (TI) and the second times (T2) in FIGS. 6, 11, 13, 19, 23 and 26 only represent a simplification for better understanding. The levels of FIGS. 6, 11, 13, 19, 23 and 26 are therefore only exemplary and are only used for better understanding.

In order to maximize the contrast (KT), the duration of the pump radiation _decay time (T _{| pmpd} ) and / or the pump radiation _{rise time} (T _{| pmpr} ) should not exceed 25%, better not more than 10%, better not more than 5%. , better not more than 2% of the time duration of an intensity _{pulse of} the pump radiation (LB), that is to say the pump radiation _{pulse duration} (T _{| pmp} ).

In order to maximize the contrast (KT), the duration of the transmission signal fall time 0 ^" s5 _P mpd) and / or the transmission signal rise time (T _S 5 _Pm pr) should not be more than 25%, better not more than 10%, better not more than 5%, better not more than 2% of the temporal transmit signal pulse duration (Tsspmp).

In order to achieve such short rise and fall times, various documents are known from the prior art, which are only mentioned here and whose technical teaching can be used here.

A driver circuit for an LED is known from DE 10 2009 060 873 A1. From the

DE 10 2016 116 368 A1 is a driver circuit for light-emitting optoelectronic

Components known (see Figure 1 of DE 10 2016 116 368 A1), in which the charging circuit (reference numbers 2, 3, 4, 5, 9, 10, 11, 12, 13, 14 of DE 10 2016 116 368 A1) has a capacitor (Reference number 18-21 of DE 10 2016 116 368 A1) charges via a series resistor (reference number 3 of DE 10 2016 116 368 A1). The light-emitting optoelectronic components

(Reference numbers 22 to 25 of DE 10 2016 116 368 A1) are connected together with their cathodes to form a first star point. A control switch (reference number 26 of

DE 10 2016 116 368 Al) connects this star point to the reference potential (reference symbol GND of DE 10 2016 116 368 Al) if one or more of the light-emitting optoelectronic components is to emit light. The buffer capacitor (reference number 9 of the DE 10 2016 116 368 A1) is used to quickly charge the actual energy reserves

(Reference numbers 18 to 21 of DE 10 2016 116 368 A1).

From US 10 193 304 B2 a driver circuit is known in which the capacitors are charged in such a way that the current remains below the response threshold of the laser.

From EP 3 301 473 A1 a control circuit for a single LED is known, which for

Sending short impulses is suitable.

From DE 10 2016 116 369 A1, an LED driver circuit is known in which each LED has its own control switch.

From DE 10 2008 021 588 A1 a laser control circuit is known in which several

Control switches are connected in parallel so that they can generate pulses with a time delay and can cool down between the pulses, while the other control switches can generate the further pulses.

Control switches are known from DE 10 2017 121 713 A1, which consist of sub-units in which each sub-unit has its own capacitor for providing the switching energy.

Control devices for a gas laser are known from DE 19 914 362 A1 and DE 19 514 062 A1.

From US 9 185 762 B2 (DE 10 2014 105 482 A1) is a circuit for reducing the

Known switch-off time of a laser diode.

From DE 10 2017 100 879 A1 a circuit for quickly switching a single laser diode on and off is known.

From DE 10 2018 106 860 Al the direct connection between a laser die is a

Known single laser and the die of an integrated control switch. The control switch is connected between the supply voltage and the anode of the laser diode.

DE 10 2016 116 875 A1 describes a driver circuit (e.g. FIG. 12 of DE 10 2016 116 875 A1) with a common control switch (reference symbol S3 of DE 10 2016 116 875 A1) for several lasers (reference symbols Dl, D7 of DE 10 2016 116 875 Al), in which the common

Control switch (reference number S3 of DE 10 2016 116 875 A1) on the cathodes of the laser is connected and can connect it to the reference potential. The energy for the laser pulse comes from a common storage capacity (reference symbol C of

DE 10 2016 116 875 A1). The lasers are selected via separate switches (reference number S2 of DE 10 2016 116 875 A1).

A laser driver circuit is known from DE 10 2006 036 167 B4, in which the resonances of the parasitic inductances and the capacitances are matched in such a way that they are predetermined

Support properties of the light pulses to be generated.

US Pat. No. 6,697,402 B2 discloses a laser driver with laser current detection via a shunt resistor between the cathode connection and the reference potential.

A single driver circuit is known from US Pat. No. 9,368,936 B1. A coil is called a

Energy storage used.

The control of a laser diode with an H-bridge is known from DE 10 2018 106 861 A1.

From DE 19 546 563 C2 a driver circuit is known in which the charging circuit is disconnected by an inductance from the laser diode for the short time of the light pulse emission when the control transistor initiates the light emission.

The pump radiation _{pulse duration} (T _{| pmp} ) should preferably be used in order to avoid thermal overloading of the

Pump radiation source (PLI), so for example a semiconductor laser, to avoid less than 50% of the transmission signal period (T _p ) of the alternating component (S5w) of the transmission signal (S5).

Thus the transmission signal _{pulse duration} (T _S5pmp ) should preferably be less than 50% of the transmission signal period (T _p ) of the alternating component (S5w) of the transmission signal (S5).

Since in a first approximation the alternating component of the intensity (l _pmp ) of the pump radiation (LB) of the

Pump radiation source (PLI) should be proportional to the alternating component (S5w) of the transmission signal (S5), it can be assumed in the context of this document that the above conditions for the alternating component (S5w) of the transmission signal (S5) also apply to the time profile of the intensity (l _pmp ) of the pump radiation (LB) apply if the time course of the electrical current and / or the electrical voltage of the alternating component (S5w) of the transmission signal (S5) has the same 10% or 90% or 50% conditions with regard to pulse duration, Rise time and fall time are sufficient. Sensor elements with a high density of paramagnetic centers According to the invention, it was also recognized that, in contrast to the prior art, no microwave radiation is necessary to operate the sensor systems proposed here, so that the paramagnetic centers (NV1) excited to a high level fall to an intermediate level . Rather, it is sufficient if the sensor element, so for example the

Diamond crystal of an HD-NV diamond, has a sufficiently high density of paramagnetic centers (NV1), for example NV centers in diamond. If the mean distances between paramagnetic centers (NV1) excited with pump radiation (LB), for example between the NV centers, are small enough, they couple and increase the dependence of the intensity (l _fl ) of their fluorescent radiation (FL) on the magnetic flux density B or other physical parameters influencing the fluorescence radiation (FL) at the location of the paramagnetic centers (NV1). An exemplary diamond crystal in the form of an HD-NV diamond preferably has an NV center density of more than 0.01 ppm based on the number of carbon atoms per unit volume of the diamond crystal. Of course, lower concentrations of paramagnetic centers (NV1), here for example NV centers, such as for example of more than 0.01 ppm and / or of more than 10 ³ ppm and / or of more than 10 ⁴ ppm and / or of more than 10 ⁵ ppm and / or more than 10 ⁶ ppm based on the atoms of the substrate (D) in the sensor element per volume unit. The intensity (l _{f |} ) of the fluorescence radiation (FL) then weakens more and more as the concentration of the NV centers in the diamond crystal decreases, so that ever higher demands are placed on the electronic signal processing. The aforementioned density of paramagnetic centers (NV1) does not need everywhere in the

Sensor element, so the exemplary diamond, can be achieved. It was in the wake of the

Invention recognized that it is rather sufficient, even advantageous, if this density is exceeded only locally and the intensity (I _pmp ) of the pump radiation (LB) is preferred only there in this area of high NV center density than the area of high density of the paramagnetic Centers (NV1), is maximized. More than 100, better still more than 1000, better more than 10 ⁴ , better more than 10 ⁵ , better than 10 ⁶ , better more than 10 ⁷ paramagnetic centers (NV1) within a sensor element are preferably coupled in parallel and preferably with one another for used to operate the sensor system. Due to the high density of the paramagnetic centers (NV1) in the substrate (D) within the sensor element, e.g. the NV centers of an HD-NV diamond, the spins of the electron configurations of the excited NV centers, i.e. the paramagnetic centers (NV1), influence each other. so that collective effects similar to but not identical to how set in a ferromagnet. As a result of spontaneous emission, some of the paramagnetic centers (NV1) then spontaneously assume an energetically lower intermediate state after a transition time t _d , which is the case in the prior art

is typically only achieved through the use of microwave radiation.

As described above, it was thus recognized according to the invention that due to the high density of paramagnetic centers (NV1) - when using HD-NV diamond due to a high density of NV centers - the need for device parts for generating and introducing the

Makes microwave radiation superfluous and thus saves. Nevertheless, the use of microwave antennas and transmitters makes sense if the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers or a group or groups (NVC) of paramagnetic centers (NV1) is to be additionally modulated or diamonds with a lower density paramagnetic centers (NV1) should be used. By dispensing with microwave radiation, sensor systems such as those presented here can only be used for use in biological and, in particular, medical applications. Otherwise the surrounding tissue will be exposed to radiation

Microwave radiation, which massively restricts the use of sensors with microwave de-excitation of the excited paramagnetic centers to an intermediate level for such purposes.

The sensor element with an anti-reflective coating and / or matching layer (ASv) for radiation of the pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB) is _preferred

Pump radiation source (PLI) provided. In the case of an HD-NV diamond as the sensor element, the first surface (OFL1) of the diamond that is irradiated with the pump radiation (LB) is preferably provided with an anti-reflective coating or an adaptation layer (ASv) and / or a

functionally equivalent microstructuring and / or coating with the same effect.

The shape of the sensor element can thus be selected more or less freely. Large sensor element areas are also possible.

Basic structure of a sensor system based on HD-NV diamonds

The core of the proposed sensor system is a sensor element with an at least locally high density of paramagnetic centers (NV1), for example an HD-NV diamond. This

Sensor element distinguishes, among other things, the proposals presented here significantly from the prior art. A pump radiation source (PLI) is provided for this in a proposed sensor system suitable to emit pump radiation (LB) that can excite the selected paramagnetic center (NV1) to emit fluorescent radiation (FL). In the case of NV centers in diamond or in diamonds, a laser diode from Osram of the PLT5 520B type, for example, is available as

Pump radiation source (PLI) with 520nm pump radiation wavelength (l _rigir ) suitable. The

When using NV centers, pump radiation (LB) from the pump radiation source (PLI) should have a pump radiation wavelength in a wavelength range from 400 nm to 700 nm and / or better 450 nm to 650 nm and / or better 500 nm to 550 nm and / or better to have 515 nm to 540 nm. Pump radiation of this function is referred to here as "green" pump radiation (LB). _When using NV centers, a wavelength of 532 nm is clearly preferred as the pump radiation wavelength (l _rGTΐr ) of the pump radiation (LB). 520nm were also used successfully. For reasons of cost, the pump radiation source (PLI) is preferably a light-emitting diode or a laser, which in the following are also referred to collectively for simplicity as an LED. It is conceivable to use other lighting means, for example organic light-emitting diodes (OLEDs) or electroluminescent devices, as pump radiation sources (PLI). The use of LEDs as pump radiation sources (PLI) is currently clearly more advantageous.

The paramagnetic center (NV1) in the material of the sensor element emits the said fluorescence radiation (FL) when irradiated with this, in the case of NV centers as paramagnetic centers (NV1) typically green, pump radiation (LB). The fluorescence radiation (FL) is typically red when NV centers are used as paramagnetic centers (NV1).

Typically, the NV center radiates in the negatively charged state NV with a

Fluorescence radiation (FL) with a fluorescence radiation wavelength (lh) of 637nm. In the non-negatively charged state, the NV centers do not fluoresce. The position of the Fermi level at the location of the relevant paramagnetic center (NV1), here an NV center, determines the preferred state of charge of the paramagnetic center, here the NV center. By embedding the paramagnetic center (NV1) in an electric field that is generated, for example, by a line (LH), the preferred charge state of the paramagnetic center, for example an NV center, can be predetermined. It is thus possible to modulate the intensity (l _fl ) of the fluorescence radiation (FL) of a paramagnetic center, for example an NV center, in that the paramagnetic center (NV1) is brought into a fluorescent state, for example the ^N_ state or is brought into another, non-fluorescent state. In a fluorescent state, the paramagnetic one in question emits Center (NV1) when irradiated with pump radiation (LB) of the pump radiation _wavelength (l _rGTΐr ) fluorescent radiation of the fluorescent radiation _wavelength (l ^). In a non-fluorescent state, the paramagnetic center (NV1) in _{question emits} NO fluorescent radiation when irradiated with pump radiation (LB) of the pump radiation _wavelength (l _rGTΐr )

Fluorescence radiation wavelength (l ^).

This fluorescence radiation (FL) of the paramagnetic center or centers (NV1) or of the group of the groups (NVC) of paramagnetic centers (NV1) is detected by the radiation receiver (PD). The radiation receiver (PD) is, for example, a photodiode, which is also preferably used for radiation with a compensation radiation wavelength (l ^), which is explained later, from a compensation radiation source (PLK), which is also explained later, or is also preferably for the compensation fluorescence wavelength (1 _M! ) Explained later, which is also explained later

Compensation fluorescence radiation (KFL) of one or more paramagnetic reference centers (NV1) or a group or groups (NVC) of paramagnetic reference centers (NV2) also explained later (NVC).

The radiation receiver (PD), for example the said photodiode, is sensitive to radiation of the fluorescence radiation wavelength (1h) of the fluorescence radiation (FL). When working out the invention, a PIN photodiode of the type BPW 34 FA from Osram was used as a photodiode, as a radiation receiver (PD). In the case of using NV centers, the radiation receiver (PD) is therefore preferred for radiation with a

Fluorescence radiation wavelength (lh) of 637nm sensitive. For example through a

upstream optical filter (F1) is preferably the combination of optical filter (F1) and radiation receiver (PD) not sensitive to radiation with the pump radiation wavelength

(lr ,,, r), which is e.g. transmitted or reflected by the sensor element. In the case of NV centers in diamond as paramagnetic centers (NV1), for example, this would be optimally one

_Pump radiation _wavelength (l _rigir ) of 532 nm to which the radiation _receiver (PD) in combination with the first filter (F1) would then not be sensitive.

The pump radiation source (PLI) generates the pump radiation (LB) depending on the current value of a transmission signal (S5). The sensor system is preferably designed such that the pump radiation (LB) at least partially falls on the paramagnetic center or centers (NV1). As described above, optical functional elements such as optical waveguides, Reflectors, lenses, prisms, open-air sections, vacuum sections, diaphragms, mirrors, beam parts, grids, etc. are used, which optically couple the pump radiation source (PLI) with the paramagnetic center or centers (NV1) of the sensor element. In the same way, the sensor system is preferably designed so that the fluorescence radiation (FL) at least partially the

Radiation receiver (PD) irradiated. This can also be ensured by means of the said optical functional elements mentioned in this document, which optically couple the paramagnetic center or centers (NV1) of the sensor element with the radiation receiver (PD).

The radiation receiver (PD) generates a receiver output signal (SO), the instantaneous value of which (sO), as a function of the intensity value of the intensity of the entire irradiation and thus also as a function of the intensity value of the intensity (l _{f |} ) of the fluorescent radiation (FL) incident on it ) depends on the instantaneous value of the intensity of the total incident radiation and thus on the instantaneous value of the intensity (l _{f |} ) of the fluorescent radiation (FL). An evaluation circuit converts the sequence of instantaneous values (sO) of the receiver output signal (SO) into a measured value for the amplitude and / or intensity (l _{f |} ) of the fluorescent radiation (FL). This measured value is output as an instantaneous value (s4) of the sensor output signal (out) or made available for use. Since the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) depends on physical parameters such as the magnetic flux density B at the location of these paramagnetic centers (NV1), a simple spatially and / or temporally high-resolution magnetometer, for example be built as an example of a sensor system for detecting a physical parameter by means of a paramagnetic center (NV1), the sensor element of which has little noise and which has a high sensitivity. Further physical parameters in addition to the magnetic flux density B, which may be determined by means of the

Intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic center (NV1) could be measured in this way, would be, for example, electrical flux density D, acceleration a, gravitational field strength g, pressure P, temperature q, speed of rotation co, vibration frequency of mechanical parts (bars) Position, intensity of ionizing radiation etc.

More specific examples for the implementation of such a sensor system are given below. Such a sensor system preferably uses one or more HD-NV diamonds with a high density of NV centers, as described above. The sensor system can, for example, use a single, monocrystalline diamond with a high density of NV centers or a powder or granules of nanodiamonds or diamonds with NV centers use a transparent material, whereby these characteristics represent extreme cases of a wide range of possible designs between these extremes. We refer here to the as yet unpublished international patent application PCT DE 2020 100430. The NV centers can also be used as individual, isolated NV centers or used in such a high density that two or preferably more NV centers couple with one another and create collective effects become possible. The use of high NV center density HD NV diamonds is preferred here. Alternatively, such a sensor system can have one or more crystals of a different material with a high density of suitable alternative paramagnetic centers. The sensor system can, for example, use a single, monocrystalline crystal with a high density of paramagnetic centers (NV1) or a granulate or a powder, for example made of nanocrystals or crystals with a high density of paramagnetic centers (NV1) in a transparent material, with these characteristics again represent the two extreme cases of the said wide range of implementation possibilities.

As an alternative method, in addition to pumping the paramagnetic center or the paramagnetic centers (NV1) with pump radiation (LB) from a pump radiation source (PLI), a sensor element and / or a local part of the sensor element with the paramagnetic center or centers (NV1) simultaneously with microwaves irradiated so as to drive the spin transition selectively.

If there are several paramagnetic centers (NV1) within the sensor element, it is conceivable to irradiate a single paramagnetic center (NV1) or only a first subset of the parametric centers (NV1) with the pump radiation (LB) and at least one paramagnetic center (NV1) of the paramagnetic centers of the sensor element or a second subset of the paramagnetic centers (NV1) of the sensor element not to be irradiated with pump radiation (LB). As a result, the fluorescence radiation (FL) then only comes from the paramagnetic centers (NV1) irradiated with pump radiation (LB). Since the areas of the sensor element with

Pump radiation (LB) are irradiated, and the areas of the sensor element that are not with

Pump radiation (LB) are irradiated, are known, thus a spatial resolution of the determination of the value of the physical parameters is achieved, the value of which is to be determined. The frequency of the superimposed microwave radiation and the strength of the magnetic flux density B to be measured can thus be correlated locally resolved. In this way, this can also be used to determine the measured values of other physical quantities influencing the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1), such as pressure P, Temperature q, acceleration a, Gravitational field strength g, rotation speed o and intensity of the irradiation with

ionizing radiation and their time integrals and derivatives take place in the same way.

As a measured variable for the magnetic flux density B and / or that of the electrical flux density D and / or other physical quantities influencing the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) such as For example, pressure P, temperature ü, acceleration a, gravitational field strength g, rotation speed o and intensity of the irradiation with ionizing radiation and their time integrals and derivatives, in turn, the changes in the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic center (NV1) are preferably used. or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) or the amount of generated and extracted photoelectrons of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) paramagnetic centers (NV1) or both. Even if the intensity (l _fl ) of the

Fluorescence radiation (FL) is used as the basis of the measured value, suction and capture of the photoelectrons in the form of a photo current of the photoelectrons of the paramagnetic center (NV!) Or the paramagnetic centers (NV1) or the group or groups (NVC) paramagnetic centers (NV1) and the use of mine these

Photoelectrons as the basis for determining measured values directly from the sensor element are always included in the description and stress.

Housing for the sensor system

The performance of a quantum mechanical sensor system can be severely restricted by an unfavorable housing. In particular, for example, a housing with ferromagnetic subcomponents can cause distortions or shielding of magnetic fields and thus limit the usability of the sensor system. An unfavorable housing can also significantly increase the production costs of such a sensor device.

The proposal therefore also includes a particularly suitable housing for the cost-effective production of sensor systems with a paramagnetic center (NV1) in the material of a sensor element and / or in the material of a quantum technological device element that is part of the sensor system and / or quantum technological system. The proposed housing, which has already been processed into a sensor system, typically has such a sensor system with a paramagnetic center (NV1) after the housing has been opened. It is preferably a Sensor system as described above with one or more HD-NV diamonds with a high density of NV centers, as described above, as sensor element.

The proposed housing can furthermore comprise first means as first optical functional elements, for example a reflector (RE), which direct the pump radiation (LB) of the pump radiation source (PLI) onto the paramagnetic center (NV1) and thus the pump radiation source (PLI), for example optically couple an LED with the paramagnetic center (NV1). As already explained, first optical functional elements such as optical waveguides, reflectors, lenses, prisms, open air sections, vacuum sections, diaphragms, mirrors, beam parts, grids, etc. can be used for the optical coupling, some of which can also be manufactured as housing parts. The use of the housing cover (DE) for this purpose is preferred.

The proposed housing can furthermore have second means as second optical means

Functional elements, for example a reflector (RE), which direct the fluorescence radiation (FL) of the paramagnetic center or centers (NV1) onto the radiation receiver (PD) and thus the radiation receiver (PD), for example a photodiode, with the paramagnetic center or centers (NV1) couple. As already explained, second optical functional elements such as optical waveguides, reflectors, lenses, prisms,

Open-air sections, vacuum sections, diaphragms, mirrors, beam parts, grids, etc. can be used, some of which can also be manufactured as housing parts. The use of the

Housing cover (DE) also for this purpose.

In this beam path between the parametric center or centers (NV1) and the radiation receiver (PD) there is preferably an optical filter (Fl) that does not attenuate the fluorescence radiation (FL) or only slightly attenuates it in relation to the application and thus transmits the Pump radiation (LB) attenuates sufficiently in relation to the application and thus absorbed or reflected and not transmitted. As a result, only the radiation, the fluorescence radiation (FL), with fluorescence radiation wavelength (lh) can reach the radiation _receiver (PD) and radiation with pump radiation _wavelength (l _rGhr ), the pump radiation (LB), cannot reach the radiation _receiver (PD).

Preferably, but not necessarily, these immediately previously mentioned first means and / or second means are part of the housing itself. For example, the inside of a cover (DE) of the housing can optionally also be structured by polishing and / or one or more layers Coating can be designed as a specular reflector (RE) for directing the pump radiation (LB) and / or the fluorescent radiation (FL). A mirror coating of surfaces of the housing, in particular parts of the housing cover (DE), is better. An additional focusing curvature of the inside of the cover (DE) is particularly favorable and preferred.

An exemplary example of such a sensor system is for example in the German

Patent application DE 10 2018 127 394 A1, the publication date of which is after the claimed days of the priorities of this application. The sensor system can, however, also expressly differ from the German patent application DE 10 2018 127 394 A1

described, be executed. The proposed housing is therefore very general

Proposed, cost-effective housing for sensor systems that include a paramagnetic center (NV1) as a functional element, without the specific measurement task playing a role here with regard to the housing. It is important that the physical parameter to be recorded can reach the paramagnetic center (NV) or the paramagnetic centers or the group or groups (NVC) of paramagnetic centers (NV1) within the housing. This must be taken into account when choosing the materials for the housing and its construction. If, for example, a magnetic flux density B is to be recorded, it makes sense to manufacture the housing preferably from non-magnetic materials in order firstly not to distort or modify the physical variable to be recorded and secondly not to cause a shielding effect. The same applies to other materials used, such as fasteners and materials.

All sub-devices of the housing and of the sensor system are preferably made non-ferromagnetic in order to minimize the influence on the paramagnetic center (NV1). “Non-ferromagnetic” is understood here to mean a permeability number less than 100. All components of the housing and of the sensor system and / or of the quantum technological system are preferably diamagnetic, which in this document refers to a permeability number of the materials with p _r <1 (typically 1-7 * 10 ^s ... 1-2 * 10 ⁴ ) is, and / or paramagnetic, which is understood here as a permeability number of the materials with p _r > 1 (typically 1 + 1 * 10 ⁸ ... 1+ 4 * 10 ⁴ ). In the context of this disclosure, however, substances with a permeability number p _r <100 are also considered non-ferromagnetic. Thus paramagnetic and diamagnetic substances are not ferromagnetic in the sense of this disclosure. Most preferably, all lead frame surfaces (LF1 to LF6) of the housing are not made ferromagnetic. In the housing that accommodates the paramagnetic center (NV1) in the material of a sensor element, therefore, all sub-devices of the sensor system are preferably not ferromagnetic.

If an integrated circuit (IC) is used, it may be useful to provide magnetic shielding (MAS) made of soft magnetic material between the radiation receiver (PD1) and the evaluation circuit, i.e. the integrated circuit (IC). Such a shield (MAS) can also be provided around the paramagnetic center (NV1) or the

paramagnetic centers (NV1) or the group or groups of paramagnetic centers (NV1) to be magnetically shielded from the integrated circuit (IC) and / or other potentially current-carrying device parts. Such a housing with such a shield (MAS) is considered to be made of non-ferromagnetic materials for the purposes of this disclosure, since it exhibits this property after the shield (MAS) has been removed.

The housing with the functionalized paramagnetic center (NV1) in the material of a sensor element is thus preferably designed in such a way that all sub-devices of the sensor system, including the housing, apart from a soft magnetic shielding (MAS), consist of one

soft magnetic material and / or except for parts of a magnetic circuit are not made of a ferromagnetic material, but preferably of a paramagnetic and / or diamagnetic material. In the context of this disclosure in accordance with DIN EN 60404-1: 2017-08, a soft magnetic material is a material with a

Understand coercive field strength <= 1 000 A / m. Even smaller coercive field strengths are preferred.

Manufacture of the proposed housed sensor system

For the sake of simplicity, the term sensor element is used as a synonym for a in this document

Sensor element and / or a quantum technological device element used.

A very cost-effective method for producing a sensor system is proposed here, which comprises the following steps, also in a different order:

• Provision of an open-cavity housing with connections and with a cavity (CAV) which has a mounting opening (MO) for introducing system components;

• Introducing the pump radiation source (PLI) into the cavity (CAV) of the open-cavity housing through the mounting opening (MO); • Introducing an integrated circuit (IC) with the evaluation circuit into the cavity (CAV) of the open-cavity housing using the mounting opening (MO), the integrated circuit (IC) preferably comprising the radiation receiver (PD1);

• If the integrated circuit (IC) does not include the radiation receiver (PD1),

the method also prefers the introduction of the radiation receiver (PD1) into the cavity (CAV) of the open-cavity housing through the mounting opening (MO) in a typically separate step;

• Electrical connection of integrated circuit (IC), connections of the open-cavity housing, pump radiation source (PLI) and, if necessary, separate radiation receiver (PD1), in particular by means of bond connections (BDI to BD4);

• Introducing a sensor element with a paramagnetic center (NV1) or

several paramagnetic centers (NV1) or one or more groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element, for example a sensor element with one or more diamonds with one or more NV centers and / or one or more groups of NV centers, preferably one or more HD NV diamonds with an at least locally high density of NV centers over which

Mounting opening (MO) in the cavity (CAV) of the open-cavity housing;

• Fastening the sensor element by means of a fastening means (Ge), wherein the fastening means (GE) is preferably shaped and / or selected and / or attached so that the pump radiation (LB) the paramagnetic center (NV1) or the

paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) and that the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups ( NVC) paramagnetic centers (NV1) can reach the radiation receiver (PD1);

• Manufacture first means for directing the pump radiation (LB) and / or second means for directing the fluorescence radiation (FL), these means preferably, but not necessarily, being part of the housing and, if necessary, fastening the first means and / or the second Means on the housing or housing parts if the respective means is not part of the housing or a housing part of the housing and / or can be manufactured as such; • Closing the housing, in particular the mounting opening (MO), with a cover (DE), which in this document is regarded as a housing part.

Test the housing with the previously proposed sensor system before

Closing

A first method is presented for testing a housing with a sensor system that is at least partially manufactured in the housing, in accordance with the proposals above and below. The test procedure is preferably carried out before the mounting opening (MO) is closed. The mounting opening (MO) is used here to feed the test signals.

In particular, the idea is to open the mounting opening (MO) for the supply of a well-controlled, preferably calibrated and adjustable test pump radiation (TLB), which corresponds to the pump radiation (LB), and the extraction of a well-controlled, preferably calibrated and adjustable test radiation (TFL), which corresponds to the Fluorescence radiation (FL) corresponds to using out of the housing and the electrical and / or physical reaction of the device components

To record the sensor system in the housing. Such a test procedure includes, for example, the following steps:

• Irradiating the open housing through the mounting opening (MO) with pump radiation (LB);

• Measurement of the emissions emitted by the housing via the open mounting opening (MO)

Fluorescence radiation (FL), whereby this measurement can take place by the sensor system itself and / or a measuring device outside the housing, preferably via the mounting opening (MO) or another measuring path. The intensity (l _{f |} ) is preferred

Fluorescence radiation (FL) is _{detected as a} function of the intensity (l _pmp ) of the pump radiation (LB) and / or as a function of the value of one or more physical parameters, for example the value of the magnetic flux density B and / or the temperature and / or can act a pressure etc;

• Assessment of the measured value or values of the fluorescence radiation (FL), particularly preferably the measured value of the intensity (l _fl ) of the fluorescence radiation (FL), by comparing the measured value or values of the fluorescence radiation (FL) with one or more measurement parameter configurations that each one or more predetermined intensity _values (I _pmp ) of the pump radiation (LB) and / or one or more

predetermined values of the influencing physical parameters or a

Combination of the same correspond with at least one of the respective Measurement parameter configuration assigned threshold. The housing with the sensor system is preferably discarded or reworked if this comparison does not correspond to an expected value.

A second method for testing a housing with a sensor system in accordance with the above proposal is also proposed. The second proposed test method is also preferably carried out before the mounting opening (MO) is closed. The basic idea is the same as for the first test procedure presented above. This second test procedure comprises the steps:

• Operating the pump radiation source (PLI) in the sensor system within the housing with an open housing with an open mounting opening (MO) without a housing cover (DE);

• Measurement of the pump radiation (LB) typically emitted by the pump radiation source (PLI) via the mounting opening (MO) of the open housing through the paramagnetic center or centers (NV1), for example one or more measured values for the intensity (l _pmp ) and / or if necessary, the intensity distribution of the pump radiation (LB) can be determined;

Evaluation of the measured value or values of the pump radiation (LB), particularly preferably the measured value of the intensity (I _pmp ) of the pump radiation (LB), by comparing the measured value or values of the pump radiation (LB) for one or more

Measurement parameter configurations, each of which contains one or more predetermined values of the physical parameters influencing the pump radiation source (PLI) (e.g.

Operating voltage or temperature) or a combination thereof, with at least one threshold value assigned to the respective measurement parameter configuration. The housing with the sensor system and / or the sensor system is preferably discarded or reworked if this comparison does not correspond to an expected value.

A third method for testing a housing with a sensor system in accordance with the above proposal is proposed. The third proposed test method is also preferably carried out before the mounting opening (MO) of the housing is closed. The basic idea is the same as for the first and second test procedures presented above. This third test procedure comprises the steps: • Operating a pump radiation source (PLI) in the sensor system with an open housing with an open mounting opening (MO);

• Steering of the pump radiation (LB) emitted by the pump radiation source (PLI) by means of optical functional components, for example a test mirror, onto the

Radiation receiver (PD1);

• Measurement of the fluorescence radiation (FL) emitted by the housing preferably via the mounting opening (MO), this measurement being carried out by the sensor system itself and / or a measuring device outside the housing, preferably via the mounting opening (MO) or another measuring path. The intensity (l _{f |} ) is preferred

Fluorescence radiation (FL) is _{detected as a} function of the intensity (l _pmp ) of the pump radiation (LB) and / or as a function of the value of one or more physical parameters, for example the value of the magnetic flux density B and / or the temperature and / or can act a pressure etc;

• Assessment of the measured value or values of the fluorescence radiation (FL), particularly preferably the measured value of the intensity (l _fl ) of the fluorescence radiation (FL), by comparing the measured value or values of the fluorescence radiation (FL) with one or more measurement parameter configurations that each one or more predetermined intensity _values (I _pmp ) of the pump radiation (LB) and / or one or more

predetermined values of the influencing physical parameters or a

Combination of the same correspond with at least one of the respective

Measurement parameter configuration assigned threshold. The housing with the sensor system and / or the sensor system is preferably discarded or reworked if this comparison does not correspond to an expected value.

The first method, the second method and the third method can be combined with one another.

Current sensor

For the implementation of a current sensor, two things are proposed, both of which should preferably be fulfilled in addition to the one described above:

First of all, a sensor system and / or quantum technology system - also referred to in this document as a sensor system in a simplified manner - is proposed in which the sensor system in one Housing is housed and in which the sensor system has a paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or several groups (NVC) of paramagnetic centers (NV1) in the material of a sensor element and / or

quantum technological device element which is part of the sensor system. The sensor system of the current sensor comprises said pump radiation source (PLI) for pump radiation (LB), which is preferably an LED. As described above, the pump radiation (LB) causes the paramagnetic center or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) to emit fluorescence radiation (FL). Furthermore, the above-described components of the housing and / or of the sensor system can also be present. In contrast to the above description, the housing now additionally comprises at least one line through which the electrical current to be detected and measured flows. This line is preferably galvanically separated from the other device parts of the sensor system. The only exception can be the sensor element with the paramagnetic center (NV1). If an NV center is used in diamond, the diamond can be in direct electrical high-resistance contact and mechanical contact with the conductor and one or more NV centers of the diamond can be optically coupled to the rest of the sensor system. The fact that diamond is generally electrically insulating can be used here. The magnetic field of the line in the form of the generated magnetic flux density B at the location of the paramagnetic center (NV1) or the paramagnetic centers or the group or groups (NVC) of paramagnetic centers (NV1) influences the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers or the group or groups (NVC) of the paramagnetic centers (NV1) in the material of a sensor element and / or of the quantum technology

Device element. The fact that the magnetic flux density B falls around a current-carrying conductor with 1 / r can be used, where r is the distance between the paramagnetic center (NV1) or the several paramagnetic centers (NV1) or the group or groups (NVC) paramagnetic centers (NV1) from the current-carrying conductor (LTG, LH, LV). The paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) are preferably located at a first distance (r) of less than 1pm, better less than 500 nm, better less than 200 nm, better less than 100 nm, better less than 50 nm, better less than 20 nm away from the exemplary horizontal line (LH). When developing the invention, it was assumed that the line (LH) is particularly preferably less than 50 nm away from the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1). Due to this small distance (r), even with very low electrical currents (IH) in the line (LH, LV, LTG), considerable magnetic flux densities B at the location of the paramagnetic center (NV1) or the

paramagnetic centers (NV1) or the group (NVC) or the groups (NVC) paramagnetic centers (NV1) are generated, which the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group (NVC) or the groups (NVC) of paramagnetic centers (NV1), possibly in parallel with other possibly relevant physical parameters. This is particularly advantageous if several lines (LH) are manufactured on the substrate (D), each of which has a paramagnetic center (NV1) from a total of paramagnetic centers (NV1) or a group (NVC) of paramagnetic centers (NV1) from a total of several Groups (NVC) of paramagnetic centers (NV1) is assigned. Advantageously, by setting the magnetic flux density B by means of different electrical currents in the different lines (LH), the contrast (KT) of the respective paramagnetic centers (NV1) assigned to the respective respective lines (LH) or of the respective respective lines ( LH) assigned to the respective groups (NVC) of the paramagnetic centers (NV1) by the resulting

different respective magnetic flux density B at the location of the respective paramagnetic center (NV1) or at the location of the respective group (NVC) of paramagnetic centers can be set differently. A method and a device are thus disclosed here which allow the contrast (KT) of different paramagnetic centers (NV1) and / or different groups (NVC) of paramagnetic centers (NV1) to be set differently. In a similar way, the multiple lines (LH) can be provided with a mutually different electrical potential compared to the electrical potential of the substrate (D). Such an electrical potential of a line (LH) assigns the Fermi level at the location of a paramagnetic center (NV1) assigned to this line (LH) and located in the vicinity of the line (LH) or at the location of one of this line (LH) , group (NVC) of paramagnetic centers (NV1) located in the vicinity of the line (LH), whereby proximity here refers to the above values for the distance (r) between a line (LH) and the paramagnetic center (NV1) assigned to this line or the group (NVC) of paramagnetic centers (NV1) assigned to this line (LH). This allows the charge state of the multiple paramagnetic centers (NV1) in the Proximity of the several lines (LH) can be set differently in each case by choosing and different setting of the electrical potentials of the lines (LH). In the case of NV centers as paramagnetic centers (NV1), in this way some NV centers can be forced into the fluorescent NV ^_ state and thus glow, while other NV centers are forced into other states and thus do not fluoresce and thus do not glow . Since the distance between the lines (LH) and the paramagnetic centers (NV1) in their vicinity is smaller than the

_Pump radiation _wavelength (l _rigir ) and smaller than the fluorescence radiation _wavelength (lh) can be used in this way to produce a sensor system whose spatial resolution is smaller than that without such a selection structure. For example, individual paramagnetic centers (NV1) or individual groups (NVC) of paramagnetic centers (NV1) can be sequentially created by applying a suitable potential to the line (LH) assigned to this paramagnetic center (NV1) or to this group (NVC) of paramagnetic centers (NV1). activated, ie brought into a fluorescent state at the same time preferably all other or at least most of the other paramagnetic centers (NV1) or other groups (NVC) of paramagnetic centers (NV1) preferably deactivated at the same time, ie brought into a non-fluorescent state. In the case of NV centers as paramagnetic centers (NV1), the line assigned to an NV center is preferably positively charged compared to the substrate (D) for the activation of the NV center, so that the nearby NV center changes to the negatively charged, fluorescent one NV state passes over, and is preferably negatively charged compared to the substrate (D) for the deactivation of the NV center, so that the nearby NV center leaves the negatively charged, fluorescent NV state and thus no longer fluoresces. This method can also be used to apply a modulation to the intensity (l _fl ) of the fluorescent radiation (FL). In the case of several lines and several paramagnetic centers (NV1) assigned to these lines (LH), the modulations can be specific for the line (LH), so that in the frequency spectrum of the modulation of the intensity (l _{f |} ) of the fluorescent radiation (FL) these different

Find modulations again. It is conceivable, for example, to undertake the modulations of the different lines at monofrequency and to select a different line-specific modulation frequency for each line (LH). This modulates the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) or the groups (NVC) of paramagnetic centers according to the line-specific modulation frequency according to the line (LH) close to them, so that the spectrum of the intensity (l _{f |} ) of the fluorescence radiation that the Radiation receiver (PD) is reached and thus the spectrum of the receiver output signal (SO) has a superposition of these modulation frequencies, which are determined by optimal filters,

Synchronous demodulators, bandpass filters or the like can be separated again if the distances between these modulation frequencies in the frequency spectrum are selected appropriately. In this way, a spatial resolution below the fluorescence radiation _wavelength (l ^) and below the pump radiation _wavelength (l _rigir ) is possible.

The sensor system determines, for example with the said radiation receiver (PD1) and for example the said integrated circuit (IC) by means of the evaluation circuit, a value for the intensity (l _{f |} ) of the fluorescent radiation (FL) and sets this value for the intensity (l _{f |} ) the fluorescence radiation (FL) in digital and / or analog form, for example as

Sensor output signal (out) ready and / or outputs it. Since the intensity (l _{f |} ) of the

Fluorescence radiation (FL) of a paramagnetic center (NV1) depends on the magnetic flux density B at the location of the paramagnetic center (NV1), a value for the intensity (l _fl ) of the fluorescence radiation (FL) and thus the value of the sensor output signal (out) is a possible measure for the magnetic flux density B at the location of the paramagnetic center and thus for the current value of the electric current through the conductor, which causes this magnetic flux density B. It is thus possible to build a current measuring system with the help of a paramagnetic center (NV1) or several paramagnetic centers or a group (NVC) of paramagnetic centers (NV1) or several groups of paramagnetic centers (NV1) without the aid of microwaves.

This document therefore describes a sensor system with a paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group (NVC) of paramagnetic centers (NV1) or several groups (NVC) of paramagnetic centers (NV1) in a substrate (D), im For the sake of simplicity, also referred to below as paramagnetic centers (NV1), where

Sensor system comprises first means (G, PLI, Fl, PD, Ml, TP) for the excitation and detection and evaluation of the fluorescence radiation (FL) of these paramagnetic centers (NV1) and wherein the

Sensor system by means of the first means (G, PLI, Fl, PD, Ml, TP) depending on the

Fluorescence radiation (FL) of these paramagnetic centers (NV1) generates and / or holds a measured value. The sensor system preferably comprises an electrical conductor (LH, LV, LTG). The electrical conductor (LH, LV, LTG) is preferably mechanically connected to the substrate (D) with the

paramagnetic centers (D) connected. The electrical conductor (LH, LV, LTG) is preferred by an electric current (IH, IV) flows through it. Said electric current (IH, IV) now generates a magnetic flux B, which influences the fluorescence radiation (FL) of these paramagnetic centers (NV1). If the shortest distance (r) between the center of gravity of the paramagnetic centers (NV1) and the conductor (LH, LV, LTG) is shorter than lpm, better less than 500nm, better less than 200nm, better less than 100nm, better less than 50nm, better less than 20nm or is the shortest distance (r) between a paramagnetic center (NV1) of the

paramagnetic centers (NV1) and the conductor (LH, LV, LTG) shorter than lpm, better less than 500nm, better less than 200nm, better less than 100nm, better less than 50nm, better less than 20nm, then the magnetic flux density is B. that acts on the paramagnetic centers (NV1) is very large, which increases the sensitivity of the current measurement.

Integrated control circuit as control and evaluation unit (LIV)

As already stated in the explanation of the basic structure of the sensor system, a control and evaluation unit (LIV) is required to operate the sensor system. This control and

Evaluation unit (LIV) is preferably an integrated circuit. Only parts of the control and evaluation unit (LIV) can also be part of an integrated circuit (IC). In addition to the control and evaluation unit (LIV), the integrated circuit (IC) can have further functional elements, such as the radiation receiver (PD), the pump radiation source (PLI) - for example in the form of a center (PZ) emitting pump radiation (LB) - the compensation radiation source (PLK), the first filter (Fl) - for example as a functional element of diffractive or digital optics / photonics - the paramagnetic center (NV1) - for example as a G center in silicon or V center in SiC -, the transmission links - for example as a micro-integrated

Fiber optic cables, a computer system (PC) and, if necessary, other control devices,

Data bus interfaces, etc. To those at the time of registration of this document

unpublished application PCT / DE 2020/100 430 is referenced here.

An integrated circuit (IC) for use with one or more paramagnetic centers (NV1) or a group or groups (NVC) of paramagnetic centers (NV1) in the material of a sensor element is therefore also proposed here. The integrated circuit (IC) preferably comprises a driver for operating a pump radiation source (PLI), preferably one

Radiation receiver (PD1), for the detection of the fluorescence radiation (FL) of the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1), an evaluation circuit for generating a sensor output signal (out) that is generated by the fluorescence radiation (FL) of the paramagnetic center (NV1) in the material of a

Sensor element, preferably on the intensity (l _fl ) of the fluorescent radiation (FL) depends. The sensor element is preferably a diamond crystal. The paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC)

paramagnetic centers (NV1) are preferably an NV center or NV centers or one or more groups of NV centers in the diamond crystal or in several diamond crystals. The radiation receiver (PD) does not necessarily have to be part of the integrated circuit (IC). It can be external to the integrated circuit.

Magnetic circle

The sensor system and / or the housing of the sensor system preferably has a magnetic circuit or parts of such a magnetic circuit, also referred to below as magnetic circuit elements.

For example, it can be useful to measure the magnetic flux B in the vicinity of the paramagnetic center (NV1) by additional, preferably soft magnetic

To change magnetic circuit elements in order to change the sensitivity field of the sensor system and / or the quantum technological device to external magnetic fields. In particular, a deformation of the sensitivity field is possible so that preferred directions and / or a direction-dependent sensitivity can be achieved. For example, it is possible to achieve such a deformation by means of a means for deforming the magnetic field. Such a means for deforming the magnetic field can be, for example, ferromagnetic device parts that are brought into the vicinity of the paramagnetic centers (NV1) and / or the vicinity of groups (NVC) of such paramagnetic centers (NV1) and then the field lines of the magnetic flux B there deform. For example, it is conceivable to make a slot in a sheet of ferromagnetic material and to place the paramagnetic centers (NV1) or groups of paramagnetic centers (NV1) in the slot. The magnetic flux density B, if it is arranged perpendicular to the surface normal of the ferromagnetic sheet, is concentrated in the sheet and reduced in the slot, so that the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) has only a small amount of the magnetic flux B is influenced. The magnetic flux density B becomes when it is arranged parallel to the surface normal of the ferromagnetic sheet and perpendicular to the slot direction, concentrated in the sheet and thus also concentrated in the slot with these orientations, so that the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) is now very high is strongly influenced by the amount of magnetic flux B. As a result, the dependence of the intensity (l _{f |} ) of the fluorescence radiation (FL) on the magnitude of the magnetic flux density B is now anisotropic and thus depends on the spatial direction.

A device for measuring a magnetic flux density B is thus described here, which firstly comprises at least one of the other sensor systems described in this document, which by means of detection and evaluation of parameters of the fluorescence radiation (FL) of one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1) to determine a value for the magnetic flux density b and which, secondly, additionally comprises a ferromagnetic functional element which deforms the field profile of the magnetic flux density B so that the measured value from the device for Measurement of a magnetic flux density B with the help of said other sensor systems described in this document as a function of the magnetic flux density B of this magnetic field deformed by means of said ferromagnetic functional element is determined, from the direction of the external impact on the device for measuring an m magnetic flux density B acting flux density B depends.

Basic principles of a low-noise sensor system with a thickness amplifier

Thick receivers are known from radio astronomy. More information can be found on the Internet under the keyword "Dicke receiver". At this point, reference is made to the publication U. Klein, "Radio astronomy: tools, applications and impacts; Course astro 841", Argelander Institute for Astronomy Bonn, 2011 edition. The font can be downloaded at the time of international registration under the link https://hera.phl.uni-koeln.de/ftpspace/simonr/Pablo/Radioastronomy.pdf. Chapter 6.4.2 on page 82 ff. Describes the basic construction of a thickness receiver.

Such a thickness amplifier is used to detect static, constant sources in extremely noisy environments. The noise that can be eliminated is the thermal 1 / f noise in the measuring channel. Around To be able to detect the source, the amplitude of which is below the noise level, is switched back and forth between the noisy input signal of the antenna and the noise signal of an equivalent noise source of the same temperature as the noise background of the received signal. This happens with a sufficiently high frequency. If, for example, the static signal of a stellar object is part of the received signal, this object signal can be raised above the background noise by multiplying the resulting signal with the switching signal.

This principle is now applied to the measurement of the paramagnetic centers (NV1), i.e. preferably the NV centers. A compensation radiation source (PLK), which is preferably designed as a light-emitting diode, called LED for short, or as a laser, serves as the comparison noise source.

If executed correctly, the noise level is also reduced here compared to the signal level. The compensation radiation (KS) of the compensation radiation source (PLK) has a

Compensation _{radiation wavelength} (Ä _ks ).

According to the invention, it was thus recognized that the fundamental problem in radio astronomy of detecting a very small signal in front of a thermally noisy background noise is the same problem that occurs with quantum sensors. Irradiation with pump radiation (LB) leads to a massive reduction in the spin temperature of a paramagnetic center (NV1). In the document presented here, sensor elements with a high density of paramagnetic centers (NV1), for example comprising HD-NV diamonds, are preferably used. This high density and the low spin temperature make the noise of the fluorescence radiation (FL) of the sensor element itself practically disappear. This is not the case with other systems that use isolated paramagnetic centers (NV1), e.g. single or a few NV centers. The

System noise therefore essentially originates from the pump radiation source (PLI), the radiation receiver (PD) or the first amplifier stages, which typically have the lowest signal-to-noise ratio. The noise of the pump radiation source (PLI) is thus impressed on the noise of the intensity (l _fl ) of the fluorescent radiation (FL) of the paramagnetic center (NV1).

In contrast to radio astronomy, fluorescence radiation (FL) can be modulated. So there is no need for the thickness switch of radio astronomy. As part of the elaboration of the invention, it was recognized that the system is preferably constructed in such a way that a pump radiation source (PLI) emits the pump radiation (LB), which is then applied to the sensor element with the paramagnetic center (NV1) or with a large number of paramagnetic centers (NV1) with possibly at least local high density of paramagnetic centers (NV1) is directed. A locally high density of paramagnetic centers can be found in a group (NVC) of paramagnetic centers, the one

Expansion d within the sensor element or within a substrate (D) within the sensor element has been achieved. The paramagnetic center (NV1) or the

paramagnetic centers (Nvl) or the group or groups (NVC) of paramagnetic centers (NV1) then emit the fluorescence radiation (FL) as a function of the intensity (l _pmp ) of the pump radiation (LB) and as a function of other physical parameters, for example the current value of the magnetic flux density B or the electrical flux density D or the pressure P or the temperature q or the acceleration a or the gravitational field strength g or the rotational speed o or of time integrals or derivatives of these quantities or of frequencies of the fluctuations of these quantities at the location of the respective paramagnetic center (NV1). Since the pump radiation (LB), for example in the case of using a

Semiconductor laser as pump radiation source (PLI) is noisy due to the relatively high temperature of the light-emitting PN junction in the laser of the pump radiation source (PLI), this modulation of the pump radiation (LB) is found with a pump noise signal component of the modulation of the intensity (l _pmp ) of the pump radiation (LB) ) also as the fluorescence noise signal component of the

Fluorescence radiation (FL) again. The temperature of the pump radiation source (PLI) is preferably detected, for example via a thermal sensor. A pump radiation source controller then preferably readjusts one of the control parameters of the pump radiation source (PLI). The actual size of the pump radiation source controller is the temperature value that the thermal sensor has determined for the temperature of the pump radiation source (PLI). The target size is usually a

Temperature reference value. It is preferably a PID controller. The possible controllable control parameters of the driver stage of the pump radiation source (PLI) are the pulse height, the pulse repetition frequency and the pulse duration. So it is obvious that it is beneficial if the

Pump radiation source regulator intervenes in the signal generator (G), which generates some of these variables. It is also conceivable to provide a heater or a cooling device and a heater and to readjust the heater and / or the cooling so that the temperature of the

Pump radiation source remains constant up to a few mK.

The inventive idea is to compare the noisy signal of the intensity (l _fl ) of the fluorescent radiation (FL) with a reference noise source by means of the same, better the identical, subsequent signal path, as in a thickness receiver. The reference noise source becomes preferably executed like the pump radiation source (PLI). This reference noise source is referred to below as a compensation radiation source (PLK).

If the compensation radiation source (PLK) is designed in the same way as the pump radiation source (PLI), then it noises approximately in the same way at the same thermal and electrical operating point. A compensation with a differently constructed compensation radiation source (PLK) is expressly less preferably also possible. Is preferred

Compensation radiation _source (PLK) selected so that the compensation radiation _wavelength (l ^) of the compensation radiation (KS) of the compensation radiation _source (PLK) is equal to or similar to the pump radiation _wavelength (l _rigir ) of the pump radiation (LB) of the pump radiation source (PLI). If the pump radiation source (PLI), as in the case of NV centers as paramagnetic centers (NV1), is green, for example, the compensation radiation source (PLK) is preferably also green.

Alternatively, but not preferably, the compensation radiation wavelength (l ^) is chosen so that it does not excite the relevant paramagnetic center (NV1) or the

paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) is suitable. For this purpose, the compensation radiation wavelength (l ^) can, for example, be greater than the fluorescence radiation wavelength (l ^) - e.g. of 637 nm for NV centers - in order to reliably excite the fluorescence of the paramagnetic center (NV1) by means of compensation radiation (KS) prevent. In reality, an optical attenuation of the compensation radiation (KS) before it hits the radiation receiver (PD) will be necessary in order to reduce the intensity of the portion of the radiation that hits the radiation receiver (PD)

Compensation radiation (KS) to the intensity of the portion of the fluorescence radiation (FL) that hits the radiation receiver (PD) for a selected optical operating point with regard to the intensity, of the portion of the radiation receiver (PD) that hits the radiation receiver (PD) in this operating point

Adjust the working point intensity of the fluorescence radiation (FL). The pump radiation wavelength (l _r , _hr ) is generally chosen to be smaller than the fluorescence radiation wavelength (lh) - for example 637 nm for NV centers. This is done, for example, in that the pump radiation source (PLI) of the pump radiation (LB) is preferably a green, blue or ultraviolet LED or a corresponding laser. The pump radiation _wavelength (l _rGhr ) is preferably 532 nm as described in the case of NV centers as paramagnetic centers. A laser with a pump radiation wavelength (l _r , _hr ) of 520 nm as pump radiation source (PLI) is also described here. As a result, a paramagnetic center (NV1), which is preferably an NV center in diamond, can be increased to a higher one Energy levels are stimulated. The absorption properties of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) must be observed.

If we assume, for example, that the paramagnetic center or centers (NV1) are NV centers in diamond, for example two green lasers with, for example, preferably 532 nm or 520 nm pump radiation wavelength (1 _rGhr ) can be used. A first laser is then used, for example, as a pump radiation source (PLI). For example, this pump radiation source (PLI) in the form of the first laser can also be a first laser diode from Osram of the PLT5 520B type with 520 nm pump radiation wavelength (1 _rGhr ), which is available from specialist dealers. A second laser is then used, for example, as a compensation radiation source (PLK). For example, this compensation radiation source (PLK) in the form of the second laser can also be a second laser diode from Osram of the PLT5 520B type with 520 nm pump radiation wavelength (l _rGTΐr ), which is available from specialist retailers.

If only a proportion of the light output of the first laser that _{corresponds to} the intensity (l _pmp ) of the

Pump radiation (LB) corresponds to the intensity (I _fi ) of the fluorescence radiation (FL) being converted, it is strongly recommended that the luminous intensity (l _ks ) of the compensation radiation (KS) be used

Reduce compensation radiation source (PLK). This can be done electrically or, better still, optically through an absorption filter, for example a screen or a gray wedge.

In the radiation receiver (PLI), the compensation radiation (KS) and the fluorescence radiation (FL) are then superimposed, adding up approximately linearly.

The thickness switch for switching between the noisy signal and the reference noise source, which is switched with a so-called chopper signal, is now implemented in such a way that the pump radiation source (PLI) is switched on and off with a transmit signal (S5) as a chopper signal and the compensation radiation source (PLK) is switched on complementarily with a compensation transmission signal (S7) which is complementary to the transmission signal (S5). In the simplest case, the compensation radiation source (PLK) is always switched on when the

Pump radiation source (PLI) is switched off and vice versa. As with the thickness receiver, this switches back and forth between the noisy fluorescence signal of the intensity (l _{f |} ) of the fluorescent radiation (FL) and the reference noise signal in the form of the intensity (l _ks ) of the compensation radiation (KS) of the compensation radiation source (PLK). It is conceivable to use different radiation sources as the compensation radiation source (PLK)

to use. This can also have cost reasons. It is conceivable instead of lasers for that

Use pump radiation source (PLI) and the compensation radiation source (PLK) light-emitting diodes, also referred to below as LEDs. It is conceivable that the

Compensation radiation source (PLK) as a center of gravity wavelength

Compensation radiation wavelength (l _{| <5} ) in the spectrum of their radiation, which is not suitable for exciting the fluorescent radiation (FL) of the paramagnetic centers (NV1). For example, the compensation radiation source (PLK) can be an infrared LED. In the case of one or more NV centers as paramagnetic centers (NV1) then the

Compensation radiation wavelength (l ^) chosen so that it is in the infrared range. As a result, the compensation radiation (KS) can not excite the fluorescence radiation (FL) of the NV center or the NV centers or the group or groups (NVC) of NV centers and thus no fluorescence radiation (FL) of the NV center or . of NV centers or the group or groups (NVC) of NV centers.

The transmission signal (S5) is modulated. The current intensity (l _pmp ) of the

Pump radiation (LB) emitted by the pump radiation source (PLI) typically depends on the value of the transmission signal (S5).

This can be described by the following equation I: il = hO '+ hRa' + hl * s5w + hl * s5g + hRb * s5w + hRb * s5g il stands for the instantaneous value in the first transmission path (II) through the

_Pump radiation _source (PLI) in emitted intensity (l _pmp ) of the pump radiation (LB). hRa 'stands for the noise of the pump radiation source (PLI) at the operating point, which is independent of the value of the transmission signal (S5) and thus independent of the value of the alternating component (S5w) of the transmission signal (S5) and independent of the value of the direct component (S5g) of the transmission signal (S5) is. hRb stands for the noise of the pump radiation source (PLI), which is dependent on the value of the transmission signal (S5) and thus depending on the value of the alternating component (S5w) of the transmission signal (S5) and depending on the value of the direct component (S5g) of the transmission signal (S5) is. hO 'is an offset value for the value of the intensity (I _pmp ) of the pump radiation (LB) emitted into the first transmission path (II) by the pump radiation source (PLI), which at the operating point is independent of the value of the transmission signal (S5) and thus independent of the value of the alternating component (S5w) of the transmission signal (S5) and independent of the The value of the direct component (S5g) of the transmission signal (S5) is. hl is a proportionality factor for the value of the intensity (l _pmp ) of the pump radiation (LB) emitted into the first transmission path (II) by the pump radiation source (PLI), which at the operating point depends on the value of the

Transmission signal (S5) and thus dependent on the value of the alternating component (S5w) of the transmission signal (S5) and dependent on the value of the direct component (S5g) of the transmission signal (S5). In the following, we assume that the value (s5) of the transmission signal (S5) thus comprises a constant DC component value (s5g) of the transmission signal (S5) and a transmission signal alternating component value (s5w). The following equation describes this: s5 = s5g + s5w

So we get: il = hO '+ hRa' + hl + hRb + hl * s5g + hl * s5w + hRb * s5w + hRb * s5g

We summarize the constant terms h0 '+ hl + hl * s5g = h0 and hRa' + hRb + hRb * s5g = hRa and get: il = hO + hRa + hl * s5w + hRb * s5w

A first portion al of this pump radiation (LB) hits the sensor element and the paramagnetic centers (NV1) contained therein. The paramagnetic centers (NV1) convert a second portion a2 of this pump radiation (LB) into fluorescence radiation (FL) with an intensity ifl which reaches a first optical filter (F1). After the interaction with the sensor element, the intensity id of the pump radiation (LB) is reduced to a third component a3 which reaches the first optical filter (F1).

The intensity ifi of the radiation in the first transmission path (II) that reaches the first optical filter (F1) is then described in the following equation II: ifi = a2 * al * (hO + hRa + hl * s5w + hRb * s5w ) + a3 * al * (hO + hRa + hl * s5w + hRb * s5w)

To simplify matters, we assume an ideal optical transmission of the fluorescence radiation (FL) through the first optical filter (F1) and an ideal blocking of the optical transmission of the pump radiation (LB) through the first optical filter (F1). The intensity ift of the radiation in the first transmission path (II) which passes the first optical filter (F1) is then described in the following equation III: ift = a2 * al * (hO + hRa + hl * s5w + hRb * s5w)

In the ideal case, only fluorescence radiation (FL) reaches the radiation receiver (PD). This is an approximation that is close to reality. The intensity ifd of the fluorescence radiation (FL) that reaches the radiation receiver (PD) is again reduced to a fourth component a4. This describes equation IV: ifd = a4 * a2 * al * (hO + hRa + hl * s5w + hRb * s5w)

At the same time, only a fifth part a5 of the reaches the radiation receiver (PD)

Compensation radiation source (PLK) emitted intensity (l _ks ) of the compensation radiation (KS). This radiation intensity i2 in the second transmission link (12) depends on the value of the

Compensation transmission signal (S7). The following equation V describes the radiation intensity i2 that is emitted by the compensation radiation source (PLK). i2 = kO + kRa + kl * s7w + kRb * s7w

Here kO stands for an offset constant, kl stands for a proportionality factor. kRa stands for a noise component that is independent of the alternating component s7w of the compensation transmission signal (S7). s7w for the value of the alternating component of the compensation transmission signal (S7). We expressly assume here in this document that the noise of the compensation radiation source (PLK) is similar to that of the pump radiation source (PLI), but we initially include a potential difference for clarification, since similarity is a flexible term

Equation VI then describes the portion ik of the intensity (I ^) of the compensation radiation (KS) that reaches the radiation receiver (PD). ik = a5 * (kO + kRa + kl * s7w + kRb * s7w)

The intensity of the total radiation ig that reaches the radiation receiver (PD) is now calculated according to equation VII: lg = ik + ifd = a5 * (kO + kRa + kl * s7w + kRb * s7w) + a4 * a2 * al * (hO + hRa + hl * s5w + hRb * s5w)

The radiation receiver (PD) now generates the ig depending on the intensity

Total radiation that reaches it, a receiver output signal (SO). Equation VIII describes this: s0 = d0 + dRs + dl * ig + dRb * ig Here sO stands for the value of the receiver output signal (SO). dO stands for an offset constant dl stands for a proportionality factor. dRa stands for a noise of the radiation receiver (PD) that does not depend on the value of the total intensity ig of the radiation that hits the radiation receiver (PD). dRb stands for a noise of the radiation receiver (PD), which depends on the value of the total intensity ig of the radiation that hits the radiation receiver (PD). Insertion gives equation IX:

S0 = d0 + dRa + dl * a5 * (kO + kRa + kl * s7w + kRb * s7w) + dl * a4 * a2 * al * (hO + hRa + hl * s5w + hRb * s5w) + dRb * a5 * (kO + kRa + kl * S7 + kRb * s7w) + dRb * a4 * a2 * al * (hO + hRa + hl * s5w + hRb * s5w)

We demand that the alternating component (s5w) of the transmission signal (S5) at least temporarily

Transmission signal period (T _p ) with a transmission signal period duration (T _p ), the integral of the value of the alternating component (s5w) of the value (s5) of the transmission signal (S5) over this

Transmission signal period (T _p ) disappears. We express this in equation X:

This periodicity condition will become very important later. We multiply the value (s5w) of the alternating component (S5w) of the transmission signal (S5) by the value (sO) of the

Receiver output signal (SO) and receive the value (s3) of the filter input signal (S3). In the sensor system, a first multiplier (Ml) performs this multiplication of the value (sO) des

Receiver output signal (SO) with the value (s5w) of the alternating component (S5w) of the transmission signal (S5) to the value (s3) of the filter input signal (S3) preferably through. This value (s3) des

Filter input signal (S3) is described by equation XI: s3 = [dO + dRa + dl * a5 * (kO + kRa + kl * s7w + kRb * s7w) + dl * a4 * a2 * al * (hO + hRa + hl * s5w + hRb * s5w) + dRb * a5 * (kO + kRa + kl * s7w + kRb * s7w) + dRb * a4 * a2 * al * (hO + hRa + hl * s5w + hRb * s5w)] * s5w

Multiplying equation XI results in equation XII: s3 = dO * s5w + dRa * s5w

+ dl * A5 * kO * s5w + dl * A5 * kRa * s5w + dl * A5 * kl * s7w * s5w + dl * A5 * kRb * s7w * s5w + dl * A4 * A2 * Al * hO * s5w + dl * A4 * A2 * Al * hRa * s5w + dl * A4 * A2 * Al * hl * s5w * s5w +

dl * A4 * A2 * Al * hRb * s5w * s5w

+ A5 * kO * dRb * s5w + A5 * dRb * kRa * s5w + A5 * kl * dRb * s7w * s5w + A5 * dRb * kRb * s7w * s5w + dRb * A4 * A2 * Al * hO * s5w + dRb * A4 * A2 * Al * hRa * s5w + dRb * A4 * A2 * Al * hl * s5w * s5w +

dRb * A4 * A2 * Al * hRb * s5w * s5w

We now use a linear filter with the filter function F [X1] XI and XI are the two values of any two signals x is any real factor. A filter with the filter function F [X1] is a linear filter in the sense of this disclosure if (Equation XIII):

F [X1 + X2] = F [X1] + F [X2]

F [x * Xl] = x * F [Xl]

We now use a loop filter (TP), which should be a linear filter with the filter function F [s3], to filter the filter input signal (S3) to the filter output signal (S4), with the value (s3) of the filter input signal (S3) being the variable the filter function F [s3] should be.

The structure of the loop filter (TP) is chosen so that at least approximately applies

(Equations XlVa to XIVc):

F [s5w] = 0

F [s5w * s5w] = l

F [l] = l

These conditions typically describe a low pass filter. We will go into this structure in more detail later. We initially assume that equations XlVa to XIVc apply to the loop filter (TP).

For the value (s4) of the filter output signal (S4) of the loop filter (TP) we then find with a positive gain v of the loop filter (TP9 or an amplifier following the loop filter (TP) (equation XV): s4 = v * dO * F [ s5w] + v * F [dRa * s5w]

+ v * dl * a5 * k0 * F [s5w] + v * dl * a5 * F [kRa * s5w] + v * dl * a5 * kl * F [s7w * s5w]

+ v * dl * a5 * F [kRb * s7w * s5w]

+ v * dl * a4 * a2 * al * h0 * F [s5w] + v * dl * a4 * a2 * al * F [hRa * s5w] + v * dl * a4 * a2 * al * hl * F [s5w * s5w] + v * dl * a4 * a2 * al * F [hRb * s5w * s5w] + v * a5 * k0 * F [dRb * s5w] + v * a5 * F [dRb * kRa * s5w] + v * a5 * kl * F [dRb * s7w * s5w] + v * a5 * F [dRb * kRb * s7w * s5w] + v * a4 * a2 * al * h0 * F [dRb * s5w] + v * a4 * a2 * al * F [dRb * hRa * s5w] + v * a4 * a2 * al * hl * F [dRb * s5w * s5w]

+ v * a4 * a2 * al * F [dRb * hRb * s5w * s5w]

We assume that the multiplication of two noise terms can be neglected and apply equations XIV (equation XVI): s4 = + v * F [dRa * s5w]

+ v * dl * a5 * F [kRa * s5w] + v * dl * a5 * kl * F [s7w * s5w] + v * dl * a5 * F [kRb * s7w * s5w]

+ v * dl * a4 * a2 * al * F [hRa * s5w] + v * dl * a4 * a2 * al * hl

+ v * dl * a4 * a2 * al * F [hRb * s5w * s5w] + v * a5 * k0 * F [dRb * s5w]

+ v * a5 * kl * F [dRb * s7w * s5w] + v * a4 * a2 * al * h0 * F [dRb * s5w]

+ v * a4 * a2 * al * hl * F [dRb * s5w * s5w]

We now multiply the value (s4) of the filter output signal (S4) by the value (s5c) of the complementary transmission signal (S5c) by means of multiplication. The following should apply here: s5c = 1-S5w, where we assume that the maximum value of the value (s5w) of the alternating component (S5w) of the transmission signal (S5) has an exemplary simplifying amount of 1. We provide the value (s6) of the feedback signal (S6) obtained in this way with an offset (bO) to the value (s7) des

Receive compensation transmission signal (S7). The prerequisite is that the L2 norm F [s5w * s5w] = l applies: s7 = [(l-s5w) * s4 + b0]

For the sake of simplicity, we have assumed here that for the amplitude (s5w _A ) of the temporal value curve of the alternating component (S5w) of the transmission signal (S5), s5w _A = 1 applies. Otherwise F [s5w * s5w] = s5w _A ^{2 would have to be} used here.

In our sensor system, a second multiplier (M2) is used for the multiplication. The second multiplier (M2) preferably multiplies the value (s4) of the filter output signal (S4) by the value (s5c) of the complementary transmission signal (S5c).

Insertion results in: s4 = + v * F [dRa * s5w]

+ v * dl * a5 * F [kRa * s5w] + v * dl * a5 * kl * F [((l-s5w) * s4 + bO) * S5]

+ v * dl * a5 * F [kRb * ((l-s5w) * s4 + bO) * s5w]

+ v * dl * a4 * a2 * al * F [hRa * s5w] + v * dl * a4 * a2 * al * hl + v * dl * a4 * a2 * al * F [hRb * s5w * s5w] + v * a5 * kO * F [dRb * s5w]

+ v * a5 * kl * F [dRb * ((l-s5w) * s4 + bO) * s5w] + v * a4 * a2 * al * hO * F [dRb * s5w]

+ v * a4 * a2 * al * hl * F [dRb * s5w * s5w]

Dissolving the brackets and applying the filter properties of the filter function F [] results in: s4 = + v * F [dRa * s5w]

+ v * dl * a5 * F [kRa * s5w] + v * dl * a5 * kl * F [s4 * s5w] -v * dl * a5 * kl * F [S4 * s5w * s5w]

+ v * dl * a5 * kl * bO * F [s5w]

+ v * dl * a5 * F [kRb * S4 * s5w] -v * dl * a5 * F [kRb * s4 * s5w * s5w] + v * dl * a5 * F [bO * kRb * s5w]

+ v * dl * a4 * a2 * al * F [hRa * s5w] + v * dl * a4 * a2 * al * hl + v * dl * a4 * a2 * al * F [hRb * s5w * s5w] + v * a5 * kO * F [dRb * s5w]

+ v * a5 * kl * F [dRb * s4 * s5w] -v * a5 * kl * F [dRb * s4 * s5w * s5w] + v * a5 * kl * bO * F [dRb * s5w]

+ v * a4 * a2 * al * h0 * F [dRb * s5w]

+ v * a4 * a2 * al * hl * F [dRb * s5w * s5w]

In addition, we assume the value (s4) of the filter output signal (S4) in the steady state as almost constant and can therefore treat the factor s4 as a constant. We also use F [s5w] = 0 and F [s5w * s5w] = l, where we assume s5w _A = l for the amplitude s5w _{A of} the alternating component s5w of the transmission signal (S5). s4 = + v * F [dRa * s5w]

+ v * dl * a5 * F [kRa * s5w] -v * dl * a5 * kl * s4

+ v * dl * a5 * s4 * F [kRb * s5w] -v * dl * a5 * s4 * F [kRb * s5w * s5w] + v * dl * a5 * bO * F [kRb * s5w]

+ v * dl * a4 * a2 * al * F [hRa * s5w] + v * dl * a4 * a2 * al * hl

+ v * dl * a4 * a2 * al * F [hRb * s5w * s5w] + v * a5 * k0 * F [dRb * s5w]

+ v * a5 * kl * s4 * F [dRb * s5w] -v * a5 * kl * S4 * F [dRb * s5w * s5w] + v * a5 * kl * bO * F [dRb * s5w]

+ v * a4 * a2 * al * h0 * F [dRb * s5w]

+ v * a4 * a2 * al * hl * F [dRb * s5w * s5w]

We assume that the constant signal component of the product s5w * s5w prevails in the loop filter (TP) and on the basis of this assumption we use the equations then applicable

F [kRb * s5w * s5w] = F [kRb], F [dRb * s5w * s5w] = F [dRb] and F [hRb * s5w * s5w] = F [hRb]: s4 = + v * F [dRa * s5w]

+ v * dl * a5 * F [kRa * s5w] -v * dl * a5 * kl * s4

+ v * dl * a5 * s4 * F [kRb * s5w] -v * dl * a5 * s4 * F [kRb] + v * dl * a5 * bO * F [kRb * s5w]

+ v * dl * a4 * a2 * al * F [hRa * s5w] + v * dl * a4 * a2 * al * hl

+ v * dl * a4 * a2 * al * F [hRb] + v * a5 * kO * F [dRb * s5w]

+ v * a5 * kl * s4 * F [dRb * s5w] -v * a5 * kl * s4 * F [dRb] + v * a5 * kl * bO * F [dRb * s5w]

+ v * a4 * a2 * al * h0 * F [dRb * s5w]

+ v * a4 * a2 * al * hl * F [dRb]

This is equivalent to: s4 (l + v * dl * a5 * kl-v * dl * a5 * F [kRb * s5w] -v * a5 * kl * F [dRb * s5w] + v * a5 * kl * F [dRb] + v * dl * a5 * F [kRb]) =

+ v * F [dRa * s5w] + v * dl * a5 * F [kRa * s5w] + v * dl * a5 * B0 * F [kRb * s5w] + v * dl * a4 * a2 * al * F [ hRa * s5w] + v * dl * a4 * a2 * al * hl + v * dl * a4 * a2 * al * F [hRb] + v * a5 * k0 * F [dRb * s5w] + v * a5 * kl * bO * F [dRb * s5w] + v * a4 * a2 * al * hO * F [dRb * s5w] + v * a4 * a2 * al * hl * F [dRb]

This is equivalent to: s4 (l / (v * dl * a5 * {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb] + F [kRb] }) + l) =

+ F [dRa * s5w] / (dl * a5) * l / {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb] + F [kRb] }

+ F [kRa * s5w] / {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb] + F [kRb]} + bO * F [kRb * s5w] / {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb] + F [kRb]} + (a4 * a2 * al / a5) * F [hRa * s5w] / {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb] + F [kRb]}

+ (a4 * a2 * al / a5) * hl / {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb] + F [kRb]}

+ (a4 * a2 * al / a5) * F [hRb] / {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb] + F [kRb] }

+ kO / dl * F [dRb * s5w] / {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb] + F [kRb]}

+ kl / dl * B0 * F [dRb * s5w] / {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb] + F [kRb]}

+ (a4 * a2 * al / a5) * hO / dl * F [dRb * s5w] / {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb ] + F [kRb]}

+ (a4 * a2 * al / a5) * hl / dl * F [dRb] / {kl- F [kRb * s5w] -kl / dl * F [dRb * s5w] + kl / dl * F [dRb] + F [kRb]}

For a large gain v of the loop filter (TP) or an amplifier that follows it, if applicable, and a large input gain dl of the radiation receiver (PD) or of the first amplifier (VI) following it and a large gain kl of the driver of the compensation radiation source (PLK), we get: s4 = + F [dRa * s5w] / (kl * dl * a5) + F [kRa * s5w] / kl + b0 * F [kRb * s5w] / kl + (a4 * a2 * al / a5) * F [hRa * s5w] / kl

+ (a4 * a2 * al / a5) * hl / kl + (a4 * a2 * al / a5) * F [hRb] / kl

+ kO / dl * F [dRb * s5w] / kl + kl / dl * bO * F [dRb * s5w] / kl

+ (a4 * a2 * al / a5) * hO / dl * F [dRb * s5w] / kl + (A4 * A2 * Al / A5) * hl / dl * F [dRb] / kl

For the case of a structurally identical compensation radiation source (PLK) and pump radiation source (PLI) we get with kRa = hRa and kRb = hRb and hl = kl and h0 = k0 and with the choice b0 = - (a4 * a2 * al / a5): s4 = + (a4 * a2 * al / a5) + l / (kl * dl) * l / a5 * F [dRa * s5w] + (l + a4 * a2 * al / a5) / kl * F [hRa * s5w ]

+ (l + a4 * a2 * al / a5) * hO / (dl * kl) * F [dRb * s5w] + (a4 * a2 * al / a5) / dl * (F [dRb] -F [dRb * s5w])

For large gain v and large input gain dl and large gain kl and hl = kl we get: s4 = (a4 * a2 * al / a5) In contrast to the measurement systems used in the prior art for the fluorescence radiation (FL) of paramagnetic centers (NV1), the device is able to reduce the noise level to a minimum. THIS IS A SIGNIFICANT DIFFERENCE FROM THE PRIOR ART. As was shown in the introduction, this is not the case with the combination of multiplier and simple low-pass as a loop filter (TP) without feedback. The use of a reference noise source in the form of a compensation radiation source (PLK) and the additional amplifiers significantly improve the noise behavior.

From the equation s4 = (a4 * a2 * al / a5) it follows that the value (s4) of the filter output signal (S4) as a measure for the reciprocal value of the fifth component a5 of the intensity (1 ^) emitted by the compensation radiation source (PLK) the compensation radiation (KS) can be used, which the

Radiation receiver (PD) achieved if the proportions a4, a2 and al are kept constant. Furthermore, the value (s4) of the filter output signal (S4) can be used as a measure for the second component a2 of the pump radiation (LB) that the paramagnetic centers (NV1) in

Implement fluorescence radiation (FL) with an intensity ifl (l _fl ) if the proportions a1, a4 and a5 are kept constant. In addition, the value (s4) of the filter output signal (S4) can be used as a measure for the first component al of the pump radiation (LB) that hits the sensor element and the paramagnetic centers (NV1) contained therein if the components a4, a2 and a5 are constant being held. Finally, the value (s4) of the filter output signal (S4) can be used as a measure for the fourth component a4, which describes the intensity component ifl of the fluorescence radiation (FL) that reaches the radiation receiver (PD) if the components a1, a2 and a5 be kept constant.

Typically, the second portion a2 is of particular interest because, for example, in the case of using an NV center in diamond as the paramagnetic center (NV1), it depends on the magnetic flux density B at the location of the paramagnetic center (NV1) or on another physical parameter. This is then the current value (s4) des

Filter output signal (S4) a measure of the current value of the magnetic flux density B at the location of the paramagnetic center (NV1) or another parameter influencing the fluorescence radiation (FL) if the proportions a1, a4 and a5 are kept constant. Thus the filter output signal (S4) can possibly already be used as a sensor output signal (out) of the sensor system. The value of the sensor output signal (out) is then a measure of the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic center or centers (NV1) or of the group or of the Groups (NVC) of paramagnetic centers (NV1) and thus a measure of the value of the physical parameters at the location of the paramagnetic center or centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1). These physical parameters can be the magnetic flux density B, the electrical flux density D, the pressure, the temperature, the irradiation intensity with ionizing radiation, the acceleration a, a movement speed v, the

Gravitational field strength g, the rotation speed o etc. and their time integrals and time derivatives and spatial gradients etc. and other variables derived from these.

For the suppression of the noise there is thus a second large gain kl before the

Compensation radiation source (PLK) or in the compensation radiation source (PLK) and a gain dl between the radiation receiver (PD) and the multiplier (Ml) in a first amplifier (VI) or in the radiation receiver (PD) required, which

Receiver output signal (SO) to the reduced receiver output signal (Sl) amplified and which can be part of the radiation receiver (PD).

In contrast to the prior art, it is not only required that the output of the

Loop filter (TP) shows a large gain v, but also that the driver of the

Compensation radiation source (PLK), for example a second matching circuit (OF2), also shows a large gain kl. It is only their combination that reliably suppresses both the noise of the pump radiation source (PLI) and the noise of the compensation radiation source (OLK), which in itself is very surprising and is nowhere described in the prior art.

Only when the factors kl, dl and v are large is the noise completely suppressed. In addition, the gain hl of the driver of the pump radiation source (PLI), for example a first matching circuit (OF1), should be approximately equal to the gain kl of the second matching circuit (OF2). This can easily be achieved in integrated circuits by a so-called "matching" construction of the driver of the compensation radiation source (PLK) and the driver of the pump radiation source (PLI). Reference is made here to the relevant specialist literature, for example, for information on WO 2001 073 617 A2, for the construction of matching circuits in integrated

Referenced circuits. Noise-optimized sensor system

The noise-optimized sensor system thus comprises a radiation receiver (PD) and a controller (Ml, TP, M2, OF). In this preferred variant, the radiation receiver (PD) then generates a receiver output signal (SO) that is typically essentially the sum of the

Intensities of the overlapping compensation radiation (KS) of the

Compensation radiation source (PLK) and the fluorescence radiation (FL) of the or the

paramagnetic centers (NV1) or on the group or groups (NVC) of paramagnetic centers (NV1) and a signal component, for example the alternating component (S5w) of the transmission signal (S5) or a signal derived therefrom, which is typically advantageous.

The sensor system is preferably designed so that the compensation radiation (KS) of one of the compensation radiation sources (PLK) irradiates the radiation receiver (PD) in a cumulative manner superimposed on the fluorescence radiation (FL), so that the total irradiation intensity of the

Radiation receiver (PD), on which the receiver output signal (SO) depends, is preferably at least partially composed of the sum of the intensity of the intensity (l _{f |} ) of the fluorescent radiation (FL) and the intensity (1 ^) of the compensation radiation (KS). This can also be ensured by means of third means, which are typically optical functional elements, which optically couple said compensation radiation source (PLK) to the radiation receiver (PD). Such optical functional elements that are used as third means can be, for example, optical waveguides, reflectors, lenses, prisms, open air lines, vacuum lines, diaphragms, mirrors, beam parts, grids, etc., which the compensation radiation source (PLI) with the

Optically couple the radiation receiver (PD). These third agents are also preferred

Housing parts. For example, it can again be reflectors or diffusers that are incorporated into the inner surface of a housing cover (DE) of an open-cavity housing (German: upwardly open housing for microtechnical devices).

In our example, the controller (Ml, TP, S&H, M2, OF) consists of the first multiplier (Ml), the loop filter (TP), the holding circuit (S&H), the second multiplier (M2) and an offset circuit (OF ), which adds the constant B0 to the output signal of the second multiplier (M2), the control signal (S6). The first multiplier (Ml) multiplies that

Receiver output signal (SO) with the transmit signal (S5) to the filter input signal (S3). The

Loop filter (TP) filters the filter input signal (S3) with a filter function (F [S3]). A

Holding circuit (S&H) samples the output of the loop filter (TP), preferably phase-synchronously Transmission signal period (T _p ) and thus generates the filter output signal (S4). The sampling takes place preferably at such times that the condition F [S5] = 0 is fulfilled at these sampling times.

It has been found that the sampling of the filter output signal (S4), in particular by means of the said folded circuit (S&FI), with the determination of a sequence of sampled values and the use of the sequence of sampled values as the sensor output signal (out) are particularly advantageous, since this method in the It is able to almost completely remove the traces of the chopper signal in the form of the transmit signal (S5) in the spectrum of the sensor output signal (out).

The folding circuit (S&FI) forwards this sample as a filter output signal (S4) to the second multiplier (M2). The second multiplier (M2) multiplies the filter output signal (S4) by the complementary transmission signal (1-S5) for the feedback signal (S6). The offset circuit (OF) adds a constant B0 to the feedback signal (S6) to form that

Compensation transmission signal (S7). In some applications, the feedback signal (S6) is used directly as a compensation transmission signal (S7).

The controller (Ml, TP, S&FI, M2, OF) then generates a compensation transmission signal (S7) as a function of the receiver output signal (SO). The compensation radiation source (PLK), the

is for example an infrared LED or a "green" LED or a "green" laser, generates the compensation radiation (KS) as a function of the compensation transmission signal (S7). The controller (M l, TP, M2, OF) generates the compensation transmission signal (S7) as a function of the transmission signal (S5), preferably in such a way that the receiver output signal (SO), except for control errors and system noise and possibly a constant DC component, is preferably essentially no signal components of the

Transmission signal (S5) has more. This can be done, for example, in such a way that the controller has a first multiplier (Ml), a loop filter (TP), in particular designed as a low-pass filter, and a second multiplier (M2). The first multiplier (Ml) multiplies that

Receiver output signal (SO) or a signal derived from it, e.g. a filtered or amplified signal or a signal supplemented by further signal components (e.g. S1) with the transmit signal (S5) or a signal derived from it (e.g. S5 ') to a filter input signal (S3). In principle, a scalar product is formed here between the transmission signal (S5) and the receiver output signal (SO) or the respective derived signals. The result of this scalar product formation is that

Filter output signal (S4). When working out the invention, it was recognized that a low-pass filter as a loop filter (TP) can only realize an indefinite integral. It is therefore not possible to comply with equation X and equations XIVa to XIVc with a low pass as a loop filter (TP). If the transmission signal (S5) has a transmission signal period (T _p ) for which equation X applies, an integration of the transmission signal (S5), which stops at times t with 0 <t <T _p , results in a value F [S5] ^ 0. This is then done in the energy spectrum of the filter output signal (S4) and thus in that of the

Sensor output signal (out) with a massive penetration of the chopper frequency, i.e. the frequency of the transmission signal (S5) on the filter output signal (S4) or the sensor output signal (out).

To now the first loop filter (TP) a certain integration instead of an indefinite one

To allow integration to be carried out without integration limits, it makes sense if, after the loop filter (TP), which is preferably a low-pass filter, a flap circuit (Sample & Hold) (S&FI) or a functionally equivalent sub-device (for example a latch or a Register etc.) is provided that the filter output signal (S4) in the case of a periodic transmission signal (S5) at the respective end of the transmission signal period

Sending signal period (T _p ) of the sending signal (S5), that is, at time T _p and only passes this value on to the second multiplier (M2) until the next sending signal period end of the sending signal (S5) at t = T _p . Here, let us arbitrarily assume t at the beginning of the transmission signal period (T _p ) of the transmission signal (S5) for simplification with t = 0. This flat circuit (S&FI) is absolutely necessary in practice for a very good resolution. It represents a further difference to the prior art. The authors of this document are not aware of any evaluation of the intensity (l _fl ) of fluorescent radiation (FL) from the prior art that uses a flip circuit (S&FI) to suppress the frequency of the transmission signal (S5 ) in the filter output signal (S4).

The loop filter (TP), which is, for example, a low-pass filter, filters the filter input signal (S3) into the filter output signal (S4). The second multiplier (M2) multiplies the value (s4) des

Filter output signal (S4) with the value (s5c) of the preferably complementary transmission signal (S5c).

The complementary transmission signal (S5c) is preferably formed according to the formula s5c = s5g-s5w or according to the formula s5c = s5w _A -s5w. Here s5w _A - stands for the value of the amplitude of the alternating component (S5w) of the transmission signal (S5). In this way, the second multiplier (M2) thus forms the feedback signal (S6) and / or directly the compensation transmission signal (S7). If necessary, a second matching circuit (OF2), which can be part of the second multiplier (M2), adds an offset B0 as a constant value to the feedback signal (S6) and thus forms the compensation transmission signal (S7). Provided that between the filter output signal (S4) and the input of the second multiplier (M2) further circuit parts such as the said folded circuit (S&FI) (sample & flold circuit) are inserted, the claims are to be understood that such constructions are expressly included. If the feedback signal (S6) is used, a second matching circuit (OF2) forms the compensation transmission signal (S7) from the feedback signal (S6). The filter output signal (S4) is then typically used as the sensor output signal (out). Its value is a measure of the intensity (l _fl ) of the fluorescence radiation (FL) and thus a measure of the physical variable to be recorded, for example the magnetic flux density B at the location of the paramagnetic center (NV1) or another physical variable that the Fluorescence radiation (FL) des

paramagnetic center (NV11).

Thickness quantum measurement system

A quantum sensor system is thus proposed here for detecting a relative value of a physical parameter with a sensor element and with evaluation means (G, PD, VI, Ml, TP). The sensor element comprises, as a quantum dot, a paramagnetic center (NV1) which is influenced by the physical parameter, or several paramagnetic centers (NV1) which are influenced by the physical parameters, or a group (NVC) of paramagnetic centers (NV1) which are influenced by the physical parameter is influenced, or several groups (NVC) of paramagnetic centers (NV1) that are influenced by the physical parameter. As before, the quantum dot is irradiated with pump radiation (LB) with pump radiation wavelength (l _{r [gir} ). Basically, there are two methods of evaluation.

In the first method, evaluation means (VI) detect a first photocurrent of the quantum dot of the sensor element. This can be done, for example, by a quantum bit construction according to FIGS. 78, 79 and 81. The evaluation means then generate a receiver output signal (SO) depending on the value of this first photocurrent.

In the second method, evaluation means (PD) detect fluorescence radiation (FL) of the

Quantum dot of the sensor element. The intensity (l _{f |} ) of a fluorescence radiation (FL) of the quantum dot of the sensor element is preferably detected by evaluation means (PD). The evaluation means (PD) in question then typically generate a receiver output signal (SO) in

Dependence on the fluorescence radiation (FL). Preferably generate the relevant

Evaluation means (PD) typically the receiver output signal (SO) as a function of the intensity (l _fl ) of the fluorescent radiation (FL). In contrast to the prior art, the sensor system proposed in this section additionally includes a reference element, the reference element being a paramagnetic reference center (NV2), which is influenced by the physical parameter, or several paramagnetic reference centers (NV2), which is influenced by the physical parameter, as the reference quantum point or a group (NVC2) of paramagnetic reference centers (NV2) that is influenced by the physical parameter, or multiple groups (NVC2) of paramagnetic reference centers (NV2) that is influenced by the physical parameter.

The reference quantum dot is irradiated with compensation radiation (KS). Now preferably the same evaluation means (PD, VI) that record the evaluated size of the quantum dot detect the evaluated size of the reference quantum dot.

When using the first method, evaluation means (VI) now detect a second photocurrent of the reference quantum dot of the reference element in addition to the first photocurrent and generate the receiver output signal (SO) as a function of the first photocurrent and now, in deviation from the prior art, also as a simultaneous function of the second Photocurrent.

When the second method is used, evaluation means (PD) now accordingly detect an intensity (I _kfl ) of a in addition to the intensity (l _{f |} ) of the fluorescent _radiation (FL)

Compensation fluorescence radiation (KFL) of the reference quantum dot of the reference element and a receiver output signal (SO) based on the values of these two intensities, which typically overlap to form a total intensity, depending on the intensity (l _fl ) of the

Fluorescence radiation (FL) and now additionally beyond the prior art also in a simultaneous dependence on the intensity (l _{kf |} ) of a compensation fluorescence radiation (KFL) of the

Reference quantum centers. Evaluation means (Ml, TP) then generate from the

Receiver output signal (SO) a measured value in the form of the value of a sensor output signal (out) for the difference between the value of the physical parameter at the location of the quantum dot and the value of the physical parameter at the location of the reference quantum dot, which is or will be used as a measured value for this measured value can. In this configuration, the reference quantum dot serves as the reference noise source for the noise of the quantum dot. A chopper signal, here typically the transmit signal (S5), is used to switch between these two

Noise sources, namely the quantum dot and the reference quantum dot switched back and forth. In contrast to the thickness receiver, this is not done by means of a so-called thickness receiver Switch, but by modulating the intensity (l _pmp ) of the pump radiation (LB) over time and modulation of the compensation radiation (KS) that is complementary in time, this modulation being dependent on the said transmission signal (S5) as a chopper signal. Instead of this modulation of the

Pump radiation source (PLI) and the compensation radiation source (PLK), continuous operation of the pump radiation source (PLI) and the compensation radiation source (PLK) with evaluation of the fluorescence radiation (FL) and the compensation fluorescence radiation (KFL) is also conceivable, in which case, for example, by means of an oscillating mirror that is connected to the Transmission signal (S5) is linked as a control signal of the oscillating mirror, alternately the fluorescence radiation (FL) of the quantum dot and the compensation fluorescence radiation (KFL) of the reference quantum dot on the

Radiation receiver (PD) are steered. If the method of extracting the photocurrents is provided, the pump radiation source (PLI) and the pump radiation source (PLI) will also operate continuously

Compensation radiation source (PLK) with evaluation of the photocurrents of the quantum dot and the reference quantum dot possible, with the help of a switch that is controlled by the transmission signal (S5) between the photocurrent of the quantum dot and the photocurrent of the

Reference quantum dot is switched back and forth.

Measurement with a non-periodic transmission signal (S5)

It is possible to use a non-periodic transmission signal (S5). In this case, a trigger circuit (TRIG) is required which analyzes the transmission signal (S5) and, whenever the condition F [S5] = 0 is met, actuates the hold circuit (S&H) by means of a synchronization signal (Sync). For example, it is conceivable to use pseudo-random sequences as the transmission signal (S5) by means of feedback shift registers. These are then not monofrequency. They have a frequency bandwidth other than zero and can be used for spreading. A spreading code of infinite length can then also be used as the transmission signal (S5). The use of excessively long spreading codes for modulating the transmission signal (S5) leads to long latency times and is typically contra-productive from an application-specific spreading code length.

Measurement of the phase delay of the fluorescence radiation (FL) compared to the pump radiation (LB)

When working out the invention it was recognized that not only the intensity (l _fl ) of the

Fluorescence radiation (FL) depends on external physical parameters, such as the magnetic flux density B, but also the phase delay. If the magnetic flux density B at the location of a paramagnetic center (NV1) is lower, so is the Phase delay between the temporal course of the intensity (l _{f |} ) of the fluorescence radiation (FL) and the leading temporal course of the intensity (l _pmp ) of the pump radiation (LB) shorter in time. If the magnetic flux density B at the location of a paramagnetic center (NV1) is greater, the phase delay between the time course of the intensity (l _{f |} )

Fluorescence radiation (FL) and the leading time course of the intensity (l _pmp ) of the pump radiation (LB) are longer in time.

The sensor system proposed here for the exemplary analysis of this phase delay between the fluorescence radiation (FL) and the pump radiation (LB) uses a second one

Analysis signal path for analyzing the receiver output signal (SO).

For this purpose, the sensor system expanded to include phase measurement includes a further transmission signal (S5 ¹ ). This further transmission signal (S5 ¹ ) is also referred to below as an orthogonal reference signal (S5 ¹ ), since it is only used for analysis and compensation. The other

The transmission signal (S5 ¹ ) is preferably different from the transmission signal (S5). The transmission signal (S5) is preferably periodic. The further transmission signal (S5 ¹ ) is also preferably periodic. However, it is also conceivable, for example, to use non-periodic signals, as described above.

For example, the transmission signal (S5) can also be a random signal that is based on a first random process. The second, further transmission signal (S5 ′) can also be a second random signal that is based on a second random process that

for example, is completely independent of the first random process. The first transmission signal (S5) can also be based on a first spreading code and the second transmission signal (S5 ¹ ) on a second spreading code, which is preferably independent of the first spreading code. Preferably, at certain times, F [S5, S5] = 0 or at least F [S5w, S5w] = 0. The trigger signal (STR) preferably activates the holding circuit (S&H) at such times.

First of all, for the sake of completeness, we describe the first analysis path again, which corresponds to the sensor systems explained so far.

As described above, the first multiplier (Ml) and the loop filter (TP) form an exemplary scalar product unit that forms the scalar product between the transmission signal (S5) and the receiver output signal (SO), these signals being able to be replaced by signals that for example by filtering or phase shifting or other signal modification methods have been or can be derived from these signals (SO, S5). It means that this scalar product unit forms a scalar product in a very specific way. Thus, in the mathematical sense, in the extreme cases, signals with respect to this scalar product can be orthogonal or parallel = synchronous with one another. Thus, for the purposes of this document, one signal is orthogonal to the other if it is orthogonal to the other signal with regard to the scalar product used, that is to say if the filter output signal (S4) would result in 0. In the sections described above, the scalar product of the receiver output signal (SO) and the transmission signal (S5) is given by the formula

<S0, S5> = F [S0 * S5] = S4 is formed. "<S0; S5>" stands for the scalar product. The filter function F [S0 * S5] here preferably also includes the function of the hold circuit, so that the scalar product here for high frequencies of the product S0 * S5 corresponds to a specific integral and thus to an L2 product.

Any signal XI in the sense of this document is orthogonal to any other signal X2 if:

<X1, X2> = 0

In relation to the system used in our sensor system, this means that:

F [X1 * X2] = 0

The further transmission signal (S5 ¹ ) or the alternating component (S5w) of the transmission signal (S5) is therefore particularly preferably selected so that it is orthogonal to the transmission signal (S5) or to the alternating component (S5w) of the transmission signal (S5). If, for example, the transmission signal (S5) is a square-wave signal with a pulse duty factor of 50%, then the further transmission signal (S5 ¹ ) can increase by a quarter

Period duration T _{p be} shifted square wave signal with 50% duty cycle. The transmission signal (S5) and the further transmission signal (S5 ¹ ) then represent something similar to sine and cosine. The controller generates the compensation transmission signal (S7) preferably as a function of the

Receiver output signal (SO), the transmission signal (S5) and preferably the alternating component (S5w) of the transmission signal (S5) in particular and the further transmission signal (S5 ¹ ), namely here preferably the alternating component (S5w ') of the further transmission signal (S5') especially in the way that that

Receiver output signal (SO) to Rule errors and system noise and possibly a constant DC component does not signal components of the transmitted signal (S5) and simultaneously no signal portions of the other transmission signal (S5 ^1), in particular of the orthogonal reference signal (S5 ¹⁾ comprises more. For the formation of the scalar product, said second scalar product unit is preferably used, which is preferably constructed in the same way as the first scalar product unit. An additional first multiplier (Ml ') multiplies the further transmission signal (S5 ¹ ) with the

Receiver output signal (SO) or a signal derived therefrom (eg with the reduced receiver output signal S1) and thus forms the further filter input signal (S3 ¹ ) for the further filter, which is preferably a further loop filter (TP ¹ ). This further filter generated from the additional filter input signal (S3 ¹⁾ the further filter output signal (S4 ¹⁾ as a further

Sensor output signal (out ¹ ) can be used. The sensor output signal (out ¹ ) then for example in relation to the further sensor output signal (out ¹ ) can indicate the phase shift as arctan of this ratio or in the form of a fluorescence phase shift time (ATFL) if, for example, the further transmission signal (S5 ¹ ) corresponds to a transmission signal phase shifted by 90 ° ( S5). For example, it is conceivable to form the arctan value of the ratio to each value pair of the values of the filter output signal (S4) and of the further filter output signal (S4 ¹ ) for a monofrequency transmission signal (S5). In this way, a phase signal can then be formed that indicates the time profile of the phase angle. Since this phase angle depends on the magnetic flux density B at the location of the paramagnetic center or centers (NV1) in the sensor element, the values of the phase signal can be used as a measure of the temporal progression of the magnetic flux density B at the location of the paramagnetic center or centers (NV1) and thus for Measurement of magnetic flux density can be used. Instead of or with the magnetic flux density B, other values of other physical parameters can also be used

The phase shift of the fluorescence radiation (FL) compared to the pump radiation (LB) in the form of the fluorescence phase shift time (ATFL) can be detected. Such physical parameters can be, for example, the pressure P, the temperature q, the acceleration a, the

Gravitational acceleration g and the electric field strength E. By determining two parameters, namely a value for the intensity (l _{f |} ) of the fluorescence radiation (FL) and a value for the fluorescence phase shift time (ATFL), this two-dimensional measured value system can include, for example, a simple matrix multiplication on two of the determinable values using a simple linear mapping physical quantities, for example the magnetic flux density B and the electrical flux density D, are mapped, so that these can be determined. This enables the values of these two physical parameters to be determined. It is assumed, however, that the other physical parameters are approximately constant and thus do not influence the measurement. Measurement by means of a complementary analysis signal with 180 ° phase shift If the transmission signal (S5) is, for example, a PWM signal with a 50% duty cycle

Square-wave signal, and the transmission signal (S5) amplitude-modulates the pump radiation (LB), then in this variant, for example, the further transmission signal (S5 ¹ ) is preferably 180 ° to the

Transmission signal (S5) phase-shifted, that is, preferably inverted-complementary transmission signal (S5). The further sensor output signal (out ¹ ) then gives the intensity (l _fl ) of the afterglow of the

Fluorescence radiation (FL) on after switching off the pump radiation (LB). such

The construction has the advantage that a first optical filter (F1) is no longer necessary and that this can then be saved. The compensation control via the compensation transmitter (PLK) always keeps the radiation receiver (PD) in the same optical operating point. A compensation transmitter (PLK) with a large one is preferred for this construction

Compensation radiation wavelength (l _{| <5} ), which is greater than the fluorescence radiation wavelength (lp) used. This has the advantage that due to the compensation radiation (KS) no

Fluorescence radiation (FL) is caused because the long-wave compensation radiation (KS) then cannot stimulate the paramagnetic centers (NV1) to emit fluorescence radiation (FL), but is received by the radiation receiver (PD). This has the disadvantage that the compensation transmitter (PLK) is then no longer a reference noise source. The controller thus forms an additional sensor output signal (out ¹ ) as a function of the further transmission signal (S5 ¹ ).

Positioning the optical filter (Fl)

In a further variant, the sensor system and / or quantum technology system, generally also referred to in this document as a sensor system in a simplified manner, comprises a first filter (F1) with special properties. For better clarity it should be mentioned again that the sensor system has at least one sensor element and / or quantum technological device element and a paramagnetic center (NV1) in the material of this sensor element and / or

quantum technological device element and furthermore in this variant one

Pump radiation source (PLI), a radiation receiver (PD) and said first filter (F1). The pump radiation (LB) has a pump radiation _wavelength (1 _rGhr ). The

Pump radiation (LB) causes the paramagnetic center (NV1) to emit

Fluorescence radiation (FL) with a fluorescence radiation wavelength (lh) when it is absorbed by the paramagnetic center (NV1) with excitation of the paramagnetic center (NV1). The radiation receiver (PD) is preferred for the fluorescence radiation wavelength (lh) Fluorescence radiation (FL) - eg 637nm at NV centers - sensitive. The pump radiation source (PLI) generates the pump radiation (LB). The sensor system is preferably designed so that the

Pump radiation (LB) falls on the paramagnetic center (NV1). As described above, the said optical functional elements can also be used here. Likewise, the sensor system is preferably designed in such a way that the fluorescence radiation (FL) irradiates the radiation receiver (PD). As described above, the said optical functional elements can also be used here.

The first filter (Fl) is designed in such a way that it is suitable for radiation with the fluorescence radiation wavelength (lp) of the fluorescence radiation (FL) - e.g. 637nm for NV centers - and thus for the

Fluorescent radiation (FL) is essentially transparent. The first filter (F1) is preferably designed in such a way that it is essentially not transparent for radiation with the pump radiation _wavelength (I _rigir ) of the pump radiation (LB) and thus for the pump radiation (LB). The first filter (F1) is then essentially transparent to the fluorescence radiation (FL) when the functionality of the sensor system for the intended purpose is achieved, that is to say the errors generated by the unavoidable attenuation in this wavelength range are sufficiently small. The filter (F1) is then essentially not transparent for the pump radiation (LB) when the functionality of the system is achieved for the intended purpose, that is to say that due to the inevitable

Transparency in this wavelength range generated errors are sufficiently small.

The sensor system is in this variant (but also in some of the previously discussed), in which the radiation receiver (PD) is part of the integrated circuit (IC), preferably designed so that radiation that is received by the radiation receiver (PD) is previously the first Filter (Fl) must pass. The first filter (F1) is particularly preferably a metal-optical filter, which is preferably part of the integrated circuit and is preferably attached in the metallization stack of the integrated circuit (IC) above the photodiode, which can be used, for example, as a radiation receiver (PD). The documents US 9 958 320 B2, US 2006 0 044 429 A1,

US 2010 0 176 280 A1, WO 2009 106 316 A2, US 2008 0 170 143 A1 and EP 2 521 179 B1 are referred to in this context as examples of micro-integrated wave-optical filters and functional elements. To the books B. Kress, P. Meyrueis, "Digital Diffractive Optics" J. Wiley & Sons, London, 2000 and B. Kress, P. Meyrueis, "Applied Digital Diffractive Optics", J. Wiley & Sons, London, 2009 and BEA Saleh, M.C. Pond "Fundamentals of Photonics" Wiley-VCH, Weinheim, 2nd edition,

2008 is pointed out. Basic principle of a metal optical filter in a micro-integrated optical system is the production of more or less regular structures with different dielectric constants and / or conductivity in the order of magnitude of the respective wavelength or smaller, so that the intended effects result from constructive and destructive interference. The technical teaching of these documents in combination with the technical teaching of this international application is a complete part of this disclosure, insofar as the national law of the country in which the nationalization takes place allows this for the later nationalization of this application.

A sensor element with one or more paramagnetic centers and / or one or more groups of paramagnetic centers (NV1) is thus described here, in which the

Sensor element comprises at least one wave-optical functional element. At least one of the wave-optical functional elements is a grating and / or a photonic crystal.

The sensor element preferably comprises a substrate (D) in which at least part of the

paramagnetic centers (NV1) and / or one or more groups of paramagnetic centers (NV1). The wave-optical functional element is preferably firmly connected to the substrate (D) and attached to its surface. The substrate (D) or a part of the substrate (D) is preferably designed as a wave-optical resonator for the pump radiation _wavelength (1 _rGhr ) and / or the fluorescence radiation _wavelength (1 ^).

It has been shown that the influence of a magnetic flux density on the intensity (l _{f |} ) of the fluorescence radiation (FL) of a paramagnetic center (NV1), here an NV center, is particularly strong when the intensity (l _pmp ) of Pump radiation (LB) is maximized. In this case, several paramagnetic centers (NV1) couple with each other if their density is like

is high enough in an HD-NV diamond, for example. It is therefore particularly advantageous if instead of the construction mentioned immediately above, in which the sensor element on the

Radiation receiver (PD) is placed as part of an integrated circuit (IC), the sensor element is placed as close as possible to the pump radiation source (PLI) so that a maximum of intensity (l _pmp ) of the pump radiation (LB) for illuminating the paramagnetic centers (NV1) With

Pump radiation (LB) is achieved.

The sensor element is preferably not irradiated. It has been shown that it is particularly advantageous if the sensor element has a first surface (OFL1) over which the

Pump radiation (LB) penetrates the sensor element and when the fluorescence radiation (FL), which leaves the sensor element via this first surface (OFL1), is used for the further measurement because their fluorescence radiation intensity (l _fl ) and their contrast (KT) are considerably higher. Such a construction reduces the absorption of the fluorescent radiation (FL) and an attenuation of the intensity (I _pmp ) of the pump radiation (LB) in the interior of the sensor element, whereby the sensitivity to the flux density B of magnetic fields is maximized.

Superstructures from paramagnetic centers (NV centers)

It is not necessary that the sensor element is homogeneously interspersed with paramagnetic centers (NV1). Rather, it is sufficient if the sensor element has a locally increased density of paramagnetic centers (NV1). The said preferably very high density of paramagnetic centers (NV1) is preferably achieved in these areas within the sensor element. For example, it can be sufficient if a very high density of NV centers, when they are used as paramagnetic centers (NV1), is only achieved on or near the surface (OFL1) of an FID NV diamond used as a sensor element.

The paramagnetic centers (NV1) can in particular be arranged in groups (NVC) within the sensor element. The groups of paramagnetic centers typically have a center of gravity that is derived from the coordinates of the individual paramagnetic centers. The groups (NVC) of paramagnetic centers (NV1) can be arranged in a one-, two-, or three-dimensional grid within the sensor element. Such a grid can be a translatory and / or rotary grid. In the case of a translational grating, it typically has a unit cell. Depending on the direction of the unit cell of the lattice, the lattice of the groups (NVC) of the paramagnetic centers shows a lattice spacing from group (NVC) to group (NVC). The grid spacing can, however, be modulated over the course of the grid. The grid spacing of the clusters is preferably an integral multiple of an integral fraction of the

Fluorescence radiation wavelength (lh) - e.g. 637nm for NV centers - or the

_Pump radiation _wavelength (l _rirr ).

If the sensor element is located in an optical resonator or if the sensor element itself is an optical resonator, a standing optical wave occurs within the

Sensor element. In this way, the interaction between the paramagnetic centers (NV1) and the pump radiation (LB) or the fluorescence radiation (FL) can be controlled. Such an interaction can be an absorption, for example. The sensor element is preferably a diamond and the paramagnetic center or centers (NV1) are preferably one or more NV centers in this diamond as a crystal. The concentration of the NV centers in the diamond is preferably at least in a locally limited area, for example a group (NVC) of NV centers, on average preferably greater than 0.1 ppm and / or greater than 0.01 ppm and / or greater than 0.001ppm and / or greater than 0.0001ppm and / or greater than 0.0001ppm based on the number of carbon atoms in the diamond per unit volume. Therefore, higher concentrations are better.

Alignment of the sensor elements

In a further variant, the sensor element and / or the quantum technology

Device element one or more crystals, each with a crystal axis. It is preferably one or more diamonds. Suitable crystals have one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1) in the crystals. It is the one or more paramagnetic

Centers (NV1) preferably around one or more NV centers in diamond.

Nitrogen vacancy, or NV centers in diamond for short, are preferably used as paramagnetic centers (NV1) with diamond as a material of the sensor element in order to detect magnetic flux densities B or electrical flux densities D that change over time. The change in the intensity (l _{f |} ) of the red fluorescent radiation (FL) is preferred

paramagnetic NV centers as a signal in the case of magnetic flux densities B not aligned with the NV axis of the NV centers or changing electrical flux densities D. Non-aligned magnetic flux densities B lead to a mixing of the spin states m_s = 0, m_s = 1 and m_s = -l in the ground state and the excited state. The mean photon yield of the sensor system when excited by a suitable pump radiation source (PLI) with a

_Pump radiation _wavelength (A _pmp ) between 300-700 nm, preferably 500-600 nm in a state with m_s = 0 is higher than with excitation in m_s = 1 or m_s = -l. If the paramagnetic NV centers (NV1) are additionally exposed to microwave radiation, one can additionally

superimposed microwave radiation drive the transition between m_s = 0, m_s = 1 and m_s = -l at a matched magnetic flux density B.

The paramagnetic center (NV1) is aligned in a first direction with respect to one of the following relevant crystal axes of the crystal, the relevant crystal axes being the Crystal axes [100], [010], [001], [111] of the crystal and their equivalents (such as [-100], [-1, -1, -1] etc.) are. When excited by the pump radiation (LB), the paramagnetic center (NV1) emits a fluorescent radiation (FL) which, depending on a magnetic field with a magnetic flux density B or a magnetic field strength Fl and / or a time-changing electrical flux density D, has a have second direction, is modulated. The second direction preferably deviates from the first direction. The second direction preferably deviates from the first direction in such a way that the GSLAC extremum at a total magnetic flux density B at the location of the paramagnetic center at 102.4mT by no more than 2% and / or no more than 1% and / or does not deviate by more than 0.5% from the standardized 1-value of the intensity (l _{f |} ) of the fluorescent radiation (FL). At the heart of the description presented here is a quantum technological device with a sensor element with a crystal with a crystal axis. The sensor system preferably has the option of, for example, in the form of a pump radiation source (PLI) for pump radiation (LB), such as an LED or a laser, or means, for example in the form of an optical window, the paramagnetic center (NV1) by means of pump radiation ( LB).

According to the proposal it has now been recognized that for a sensor device for

Regardless of the spatial direction-independent detection of the amount of the magnetic flux density B, the second direction should preferably deviate from the first direction, since then the fluorescence intensity of the intensity (l _fl ) of the fluorescence radiation (FL) with increasing amount of the magnetic flux density B at the location of the paramagnetic center (NV1) im From a certain minimum flux density of approx. 10mT, the crystal drops with a strictly monotonous decrease. This is not the case if, as is customary in the prior art, the crystals are aligned in order to be able to use microwave radiation. Figure 2a of the writing by A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), 02.08.2016 shows the fluorescence curve of the intensity (I _fi ) of the fluorescence radiation (FL) of a single NV center .

In Figure 2a of the publication by A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), 08/02/2016, the first direction and the second direction coincide.

As a result of the misalignment or de-calibration between the first and second directions proposed here, which differs from the prior art, a poor quantum number is used as a basis, which leads to a mixture of the quantum states and thus to a decrease in the intensity (l _{f |} ) of the Fluorescence radiation (FL) with increasing magnetic flux density B leads. An additional magnetic flux density B is therefore preferably applied as the magnetic flux density B to be measured, the vector of which, which has the second direction, does not point in the direction of said first direction of the crystal axis.

FIG. 27 shows the intensity (l _fl ) of the fluorescence radiation (FL) when the two directions are tilted relative to one another. A first advantage is that the resulting dependency is a function of the magnetic flux density B and is therefore reversible. In the prior art, the crystals are always aligned, so that the dependency in the case of the alignment of FIG. 2a of the publication by A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), August 02, 2016, because the first and second directions coincide. The graph in FIG. 2a of the A . Wickenbrock et. AL "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), 08/02/2016 is not a function and therefore cannot be reversed. This is used in the disclosures of the prior art in order to be able to manipulate the spins in the resonance points by means of microwave irradiation. The disadvantage of the method proposed here in contrast to the methods and devices of the prior art is therefore that such

Microwave manipulation is then no longer possible when using this tilting of the directions. Thus, an expensive and complex crystal alignment is necessary in the technical teaching of the prior art.

However, this disadvantage is outweighed by the fact that assembly processes as described in the as yet unpublished applications PCT / DE 2020/100 430, DE 10 2019 114 032.3,

DE 10 2019 121 028.3 and DE 10 2019 121 029.1 can be proposed. The disclosure content of the German patent applications PCT / DE 2020/100 430, DE 10 2019 114 032.3 and DE 10 2019 121 028.3 and DE 10 2019 121 029.1, which were still unpublished at the time of filing this disclosure, is an integral part of this disclosure. , insofar as this is permissible in the legal system of the country in which the nationalization takes place when this application is later nationalized

The housing disclosed in the disclosure presented here can also be used.

The housing used is a housing such as, for example, in German patent application DE 10 2019 120 076.8, which was still unpublished at the time of filing this disclosure suggested. The disclosure content of the German patent application DE 10 2019 120 076.8, which was still unpublished at the time of filing this disclosure, is a full part of this disclosure, insofar as the later nationalization of this application states in the

Legal system of the state in question in which nationalization is permitted.

As a result of this misalignment or de-calibration in such a way that the second direction deviates from the first direction in such a way that the GSLAC extremum (see FIG. 2a of the publication by A. Wickenbrock et. AI. “Microwave-free magnetometry with nitrogen vacancy centers in diamond "

Appl. Phys.Lett, 109, 053505 (2016), 02.08.2016) with a total magnetic flux density B at the location of the paramagnetic center at 102.4mT by not more than 2% and / or not more than 1% and / or not more than 0 , 5% of the normalized 1-value of the intensity (l _{f |} ) of the fluorescence radiation (FL) (see Figure 2a of the paper by A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys .Lett, 109, 053505 (2016), 02.08.2016 and

DE 10 2018 127 394 A1) deviates, a poor quantum number is used as a basis, which leads to a mixture of the quantum states and thus to a decrease in the intensity (l _fl ) of the

Fluorescence radiation (FL) with increasing magnitude of the magnetic flux density B leads above a certain minimum flux density (approx. 10mT for NV centers). A prerequisite is a high density of NV centers in the area of the sensor element irradiated with pump radiation (LB), for example in an HD NV diamond. An additional magnetic field is applied, the magnetic flux density vector of which does not point in the direction of the first direction of the crystal axis, but in a different second direction. The behavior of the intensity (l _{f |} ) of the fluorescent radiation (FL) of Figure 2a of the publication by A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), 02.08.2016 as a function of the magnetic flux density B can therefore only be observed when the crystals are aligned 2a of the publication by A. Wickenbrock et. AI. “Microwave-free

Magnetometry with nitrogen-vacancy centers in diamond "Appl. Phys.Lett, 109, 053505 (2016), 02.08.2016 recognizable resonance points (peaks) are only recognizable when the direction of the magnetic field is aligned with the crystal axis. This makes production microwave-based

Quantum sensor systems are very complicated and expensive.

FIG. 27 shows the course that results when the alignment is decalibrated (that is, a different first and second direction). Only then is any orientation of the magnetic field possible. As can easily be seen in FIG. 27, this is the relationship between the Magnetic flux density B and the intensity (l _{f |} ) of the fluorescence radiation (FL) are greatest in an optimal operating point range. With an additional permanent magnet and / or an energized electric coil, a magnetic bias field of, for example, 20mT bias flux density B _{0 can be} superimposed on the field to be measured, thereby increasing the sensitivity of the intensity (l _fl ) of the fluorescence radiation (FL) to changes in the magnetic Flux density B is maximized.

A non-alignment of the first direction in relation to the second direction can be recognized by the fact that no resonances (e.g. GSLAC) occur. Of course, you can always align the magnetic field so that these resonances occur. However, if a device is intended and suitable for measuring magnetic fields in which the first and second directions do not match, then it is also in the stress range of the

corresponding claims, insofar as the other features thereof apply, even if it has said resonances in a certain magnetic field direction.

In principle, when using diamond as a sensor element or as a sensor element part, all forms of diamond with a content of paramagnetic centers (NV1), in particular with a content of NV centers as paramagnetic centers (NV1), are possible, since an alignment of the paramagnetic centers ( VI), in particular the NV centers to the vector of a magnetic flux density B is not necessary. This differentiates the sensor systems presented here from the previous diamond-based sensor systems, which require a precise alignment of the diamond crystals.

By avoiding the resonance cases of Figure 2b of A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), August 02, 2016 thus results in the strictly monotonically falling curve of FIG. 27, which is then also bijective in sections and thus can be calibrated. Only then is it possible in one

Mass production of a measuring system.

As before, the sensor element preferably comprises a diamagnetic material, the diamagnetic material preferably comprising one or more diamond crystals, and the paramagnetic center or centers (NV1) preferably including one or more NV centers. The use of centers other than paramagnetic centers (NV1) is also conceivable.

For example, SiV centers, GeV centers, TRI centers, STI centers etc. in diamond would be conceivable. If silicon is used instead of diamond as the material of a substrate (D) of the sensor element, the use of G centers is conceivable, for example. If silicon carbide (SiC) is used instead of diamond as the material of a substrate (D) of the sensor element, the use of V-centers is conceivable, for example.

The use of a color center or flaws or

Substitution center in a crystal as a paramagnetic center (NV1) for measuring magnetic flux densities B or possibly other physical parameters such as acceleration a, gravitational field strength g, electrical flux density D, rotation speed co, intensity of the irradiation with ionizing radiation etc. and their time integrals and derivatives claimed, the crystal axis of the color center being rotated in contrast to the prior art with respect to the vector of the magnetic flux density B.

Position sensors

Furthermore, this disclosure includes the use of a sensor system as described above for determining the position and / or the change in position and / or acceleration and / or rotation of a measurement object (O). It can also be deformations of

Act surfaces and / or density fluctuations. The measurement object (O) generates and / or modifies and / or modulates a magnetic field in the form of the magnetic flux density B of this field. This modulation is detected by the proposed sensor system. The proposed sensor system generates or provides at least one sensor output signal (out). This provision can take place, for example, in a memory or register of the integrated circuit or as a digital or analog output signal of the integrated circuit. The value of this sensor output signal (out) depends on the value of the magnetic field - more precisely the magnetic flux B or another physical parameter influencing the fluorescence radiation (FL) - at the location of the paramagnetic center (NV1) or the

paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1), which is generated and / or modified and / or modulated by the measurement object (O).

In important use cases, such as measuring the position of

Device parts for control elements, machines, robots, electric motors or Internal combustion engines, the generation and / or modification and / or modulation of the magnetic field in the form of the magnetic flux density B can be periodic. The periodicity can be attributed to an electrical and / or mechanical oscillation and / or a mechanical movement along a closed path.

In the proposed method, an alternating magnetic flux density B generated by a mechanically oscillating system or an electric field strength E is scanned by a preferred sensor system that is fixed to the alternating magnetic flux density B or to the electric field E, as is proposed here in various variants.

The invention also comprises an operating element, the change in position of which, for the purpose of operating a device, results in a change in a magnetic flux density B at the location of one or more paramagnetic centers (NV1) of the sensor system. A permanent magnet attached to a lever can cause such a change in the magnetic flux density B at the location of the paramagnetic center (NVl) when operated, for example when the position of the lever is changed, which can be recognized by the proposed sensor system and output via the sensor output signal (out) can.

The sensor systems proposed in this document can be used to determine the position of a measurement object (O) and / or a variable derived from the position of the measurement object (O), in particular the speed and / or acceleration and / or the vibration and / or the rotation of the Object to be measured (O). It is also used to measure the

Magnetization of the measuring object (O) possible, the magnetization of the measuring object (O) being caused by a current flow in the measuring object (O) or by ferromagnetic properties of the

Measurement object (O) or parts of the measurement object (O). With the sensor systems proposed here it is also possible to determine a variable derived from the magnetization of a measurement object (O) and / or a magnetization direction of the object relative to the

Sensor system and / or a variable derived from the magnetization direction of the measurement object (O) possible. The measurement object (O) generates, for example, a magnetic flux density B and / or modifies and / or modulates the magnetic flux density B at the location of the

paramagnetic centers (NV1) of the sensor system. This generation and / or modification and / or modulation of the magnetic field is recorded by the sensor system and held ready as a measured value or output. For this purpose, the sensor system preferably generates at least one sensor output signal (out) or preferably provides this. The value of the The sensor output signal (out) then depends on the value of the magnetic flux B at the location of the paramagnetic center (NV1) and / or at the location of the paramagnetic centers (NV1) in the sensor system, this magnetic flux B being generated by the measurement object (O) / or modified and / or modulated.

In the proposed method, an alternating magnetic field generated for example by a mechanically oscillating system in the form of the value of the magnetic flux density B or an alternating electric field in the form of the electric flux density D can be generated by a sensor system with one or more paramagnetic centers, which is fixed, for example, to the alternating magnetic field or electric alternating field (NV1) are scanned.

The alternating field component of the magnetic flux density B or the

alternating field portion of the electrical flux density D, which are present at the location of the paramagnetic center (NV1) or the paramagnetic centers (NV1) of the sensor system, by means of a

Change in state of electrical spins of the electron configurations of the paramagnetic center or centers (NV1) is determined. Here, the change in spin states of the

paramagnetic centers (NV1) by means of the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic center or centers (NV1) in different wavelengths or by means of the

different numbers of photoelectrons that can be extracted from the sensor element, or detected by means of the different amount of electrical photocurrents or by means of both methods.

Analogous to the determination of a magnetic flux density B and a changing electric flux density D, an electrostatic field, more precisely its electric flux density D, can also be measured by one or more moving paramagnetic centers (NV1) that the flux density B caused by the movement of the or of the paramagnetic centers (NV1)

The transformed electrical flux density D is detected and converted into an intensity value of the intensity (l _fl ) of its fluorescent radiation (FL), which is detected by a radiation receiver (PD) and converted into a sensor output signal (out) by an evaluation circuit (VI, Ml, TP) , the value of which then depends on the mean electrical flux density D at the mean location of the paramagnetic center (NV1) in the acquisition period. For example, this can

Sensor element with one paramagnetic center (NV1) or several

paramagnetic centers (NV1) on a vibratory mechanical device, e.g. a vibrating string or a vibrating beam, for example an oscillating crystal, to be appropriate. If the oscillation frequency of this mechanical device is known, the result is mixed frequencies that can be found in the spectrum of the sensor output signal (out) at a characteristic point and, for example, by means of a bandpass and a subsequent one

Synchronous demodulator can be filtered out. A device such as that of FIG. 15, for example, in which the signal of the intensity (l _{f |} ) of the fluorescent radiation (FL) of one or more paramagnetic centers (NV1) of one or more paramagnetic centers is particularly preferred

Sensor element with the intensity (l _{f |} ) of the fluorescence radiation (FL) of one or more paramagnetic reference centers (NV2) is compared. If the shielding (AS) is not used in the device, the same values of the intensity (l _KFL ) of the compensating _{fluorescence radiation} (KLF) should be obtained in both measuring channels via the paramagnetic center or centers (NV1) and via the paramagnetic reference center (s) (NV2) ) the paramagnetic

Reference centers (NV2) and the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) are recorded. If, for example, the sensor element with the

paramagnetic centers (NV1) housed on a mechanically oscillatable component, such as a beam or a string or oscillating crystals, this leads to an additional mixing frequency based exclusively on the transformation of the magnetic flux density B and the electric field E. If the magnetic flux density B and the electrical flux density D are to be separated, a device as in FIG. 25 is recommended, which then delivers a value as the sensor output signal (out) that primarily depends on the magnetic flux density B, while with a strong electrostatic flux density D the value of the additional sensor signal (out ¹ ) then essentially depends on the value of the

electrostatic flux density D depends. Since the paramagnetic centers (NV1) and the paramagnetic reference centers (NV2) show a time delay (t _d ), this must

Delay (t _d ) can still be corrected out of the result by a matrix multiplication.

The values of this matrix are device-specific and should be determined type-specifically or, better, device-specifically before using the device for measurements. The prerequisite for recording the electrical flux density D is that the electrical flux density D is not constant and so the law of induction applies. According to the proposal, this can be achieved by a linear and / or preferably oscillating movement of the field source and / or the

paramagnetic centers (NV1) and / or the or the paramagnetic reference centers (NV2) can be achieved. For this purpose, for example, the sensor element with the

paramagnetic centers (NV1) or the group or groups (NVC) paramagnetic Centers (NV1) and / or with the paramagnetic reference center (s) (NV2) or the group or groups (NVC2) of paramagnetic reference centers (NV2), for example by gluing a sensor element to the surface of the typically piezoelectric

Oscillating element, for example an oscillating crystal (Ql, Q2), be attached so that the oscillating element, for example the oscillating crystal (Ql, Q2) with one or more paramagnetic centers (NV1) or with one or more groups (NVC) of paramagnetic centers (NVC) is provided. From the publication J.Cai, F. Jelezko, MB Pleniol, "Signal transduction and conversion with color centers in diamond and piezo-elements" arXiv: 1404.6393v2 [quant-ph] 30 Oct 2017 is the coupling of piezoelectric substrates with individual paramagnetic centers (NV1) known. The combination of a polycrystalline diamond film with a piezoelectric micromechanical transducer is known from US Pat. No. 7,812,692 B2. With the help of the microwave-free methodology presented here based on sensor elements with a high density

paramagnetic centers (NV1), for example based on HD-NV diamonds, the structure of such systems can be massively simplified. The oscillating element of the quartz crystal then forms the mechanical oscillatory oscillating element (MS). The fluorescence radiation (FL) of the paramagnetic center or centers (NV1) or the group or groups (NVC)

paramagnetic centers (NV1) depends in states of the oscillating element of the quartz oscillator with a speed of about 0m / s and a maximum acceleration essentially, for example, on the magnitude of the magnetic flux density (B) at the location of the paramagnetic centers (NV1) and in states of the The oscillating element of the quartz oscillator with a maximum speed and a negligible acceleration also depends, for example, on the amount of the electric field strength E at the location of the paramagnetic centers (NV1). In this document, a piezoelectric, in particular piezoelectrically driven

Oscillating element, for example an oscillating crystal, disclosed that at least one

paramagnetic center (NV1). The piezoelectric oscillating element preferably comprises one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers. The piezoelectric vibrating element preferably comprises an HD-NV diamond or a device area which comprises HD-NV diamond. This device corresponds to a method for operating a quantum technological device comprising the step of providing a sensor element, wherein the sensor element has a crystal with a crystal axis and wherein the crystal has one or more paramagnetic centers (NV1) in the crystal. Furthermore, the proposed method comprises irradiating the or the paramagnetic centers (NV1) with pump radiation (LB) with a pump radiation wavelength (l _r , _hr ) and the emission of fluorescent radiation (FL) depending on the pump radiation (LB) and depending on the value of a total magnetic flux density B at the location of the or . of the paramagnetic centers (NV1). In the case of paramagnetic centers (NV1) moving relative to an electromagnetic field, parts of the electric field with the electric field strength E are transformed into a magnetic field with a magnetic flux density B resulting therefrom. Thus, the corresponding device is when moving

Device relative to the field source is also able to detect electrostatic fields or more complex electromagnetic fields.

For the sake of simplicity, everything written before and later essentially relates to the case of stationary coordinate systems with a coordinate origin in the paramagnetic center or centers (NV1). Moving, rotating and / or accelerated cases are also claimed. The stress also includes the acquisition of electrostatic fields by using a Lorenz transformation. As a further step, the method comprises the acquisition of at least part of the fluorescence radiation (FL) and the determination of a value of the intensity (l _{f |} ) of the

Fluorescence radiation (FL). A special feature of the proposed method is that the paramagnetic center or centers (NV1) or the group or groups (NVC)

paramagnetic centers (NV1) are aligned in a first direction with respect to one of the following relevant crystal axes, the relevant crystal axes being the crystal axes [100], [010], [001], [111] of the crystal and their equivalents (such as [ -100], [-1, -1, -1] etc.), and that the vector of the magnetic flux density B points in a second direction and that this second direction deviates from the first direction. As before, the crystal or the sensor element is preferably a diamond crystal with one or more NV centers (NV1) as paramagnetic centers (NV1).

Particular advantages result when the pump radiation source (PLI), the sensor element (eg a diamond), the first filter (F1) and the radiation receiver (PD) form a preferably common microsystem unit. This unit can be miniaturized and attached, for example, underneath an in particular mechanically oscillating system, for example as a pickup. In this context, reference is made to the housing presented here. A ferromagnetic material, for example a ferromagnetic string, for example the string of an electric guitar or an electric bass, is preferably used as the mechanically oscillating system for the detection of mechanical vibrations by a stationary sensor system according to the sensor systems proposed here.

Positional. Speed, acceleration and rotation sensors The position, a movement of a measuring object (O), its acceleration or rotation or another method can, for example, modulate the magnetic flux density B at the location of the paramagnetic center or centers (NV1) by the respective measuring object (O ), which can then be detected using the methods and devices described here. The paramagnetic centers can also be on the measurement object (O), for example a

Guitar string, and are measured there by the sensor system.

In general, therefore, the proposed method comprises the generation of a first

Modulation signal by means of a mechanical system with which the magnetic flux density B at the location of the paramagnetic center or centers (NV1) or the group or groups

paramagnetic centers (NV1) is modulated. The mechanical cause can lie in the position, movement, rotation or acceleration of a measurement object (O) that interacts with the magnetic flux density B at the location of the paramagnetic centers (NV1). The mechanical cause can also be in the position, the movement of the rotation or the

Acceleration of the sensor element with the paramagnetic centers (NV1), which interact with the magnetic flux density B at the location of the paramagnetic centers (NV1).

As a result, this is equivalent to generating the modulated optical signal by means of a modulated fluorescence radiation (FL) from the paramagnetic center or centers (NV1), the modulation of the modulated fluorescence radiation (FL) being dependent on the modulation of the magnetic flux density B at the location of the paramagnetic centers ( NV1) depends.

The paramagnetic center or centers (NV1) show a change in the fluorescence radiation (FL) they emit, depending on the change in magnetic flux density B, and / or a change in the amount of photoelectrons they generate after irradiation, which is dependent on the change in magnetic flux density B of the diamagnetic material with

Pump radiation (LB) in the form of green visual light, it being possible for this irradiation with pump radiation (LB) to take place with or without superimposed microwave radiation. The photoelectrons that do that or the paramagnetic centers (NV1) can be generated by electric fields in the

Material of the crystal of the sensor element to be sucked off to contacts. These are preferably ohmic contacts to the relevant material of the sensor element. For example, in the case of a diamond, titanium contacts can be involved.

The fluorescence radiation (FL) of the paramagnetic centers (NV1) or an amount of photoelectrons generated by paramagnetic centers (NV1) in a diamond with an at least local NV center concentration of at least 0.0001 ppm and / or at least is preferred 0.001 ppm and / or preferably of at least 0.01 ppm and / or preferably of at least 0.1 ppm and / or preferably of at least 1 ppm and / or preferably of at least 10 ppm and / or preferably of at least 20 ppm and / or preferably of at least 50 ppm and / or preferably of at least 100 ppm and / or preferably of at least 200 ppm and / or preferably of at least 500 ppm and / or preferably of at least 1000 ppm and / or preferably of at least 2000 ppm and / or preferably of at least 5000 ppm based on the amount of diamond carbon atoms. During the preparation of this international application and its priority filings,

Concentrations of lOppm and 20ppm used. The concentration can preferably be determined by means of an EPR measurement. For more information, we refer to M. Capelli, A.H. Heffernan, T. Ohshima, H. Abe, J. Jeske, A. Hope, A.D. Greentree, P. Reineck, B.C. Gibson, Increased nitrogen-vacancy center creation yield in diamond through electron beam Irradiation at high temperature, Carbon (2018), doi: https://doi.Org/10.1016/ j.carbon.2018.ll.051

To generate the fluorescence radiation (FL) of the paramagnetic centers (NV1) or the

Photoelectrons of the paramagnetic centers (NV1) are preferably modulated pump radiation (LB) which is amplitude-modulated by means of an alternating component (S5w) of a transmission signal (S5)

Pump radiation source (PLI), in particular a pulsed laser or a pulsed LED, with a lower modulation frequency of the alternating component (S5w) of the transmission signal (S5) of at least 1 kHz and / or at least 10 kHz and / or at least 100 kHz and / or at least 1 MHz and / or at least 10MHz used.

The paramagnetic centers (NV1) then typically emit a modulated one

Fluorescence radiation (FL), which depends on the modulated pump radiation (LB) of the pump radiation source (PLI) as modulated pump radiation (LB). The modulated fluorescence radiation (FL) of the paramagnetic centers (NV1) is then preferably detected with a light-sensitive electronic component, in particular a photodiode, as a radiation receiver (PD) and / or via photoelectrons and converted into a modulated one

Receiver output signal (SO) converted.

The modulated receiver output signal (SO) is then preferably converted by means of a synchronous demodulator and / or a lock-in amplifier and / or by means of another

Device that generates a level signal by means of scalar product formation between the alternating component (S5w) of the transmission signal (S5) or a signal (S5, S5c) derived from the alternating component (S5w) of the transmission signal (S5) and the receiver output signal (SO) or a signal derived therefrom (eg S1), and the use of the filter output signal (S4) or a signal derived therefrom as a sensor signal (out).

In one variant, an orthogonal reference signal (S5 ¹ ) is generated from the

Alternating component (S5w) of the transmission signal (S5), e.g. due to phase shift.

It is possible that the alternating component (S5w) of the transmission signal (S5) has a non-zero spectral frequency component with a lower frequency range limit frequency of less than 1 kHz and / or better less 100 Hz and / or better less 10 Hz and / or better less 1 Hz of at least 1 Hz and with an upper frequency range limit frequency of better greater than 1M Hz and / or better greater 10M Hz and / or better greater 100MHz and / or better greater 1 GHz and / or better greater 10 GHz.

Most of the time 10kHz was used in the attempts to develop the invention.

Sensor system with spatially separated sensor element and musical instrument Another embodiment results from the use of an optical waveguide (LWL) or other light-guiding structures to remove the sensor element with the paramagnetic center or centers (NV1), for example a diamond with NV centers, from the pump radiation source ( PLI), the radiation receiver (PD) and the evaluation circuit (VI, M l, TP, G) to operate spatially separated. A musical instrument is discussed here as an exemplary device for a class of possible devices. For example, an HD-NV diamond in the form of a red diamond can be visibly attached to an acoustic resonance body, for example the body of an electric guitar while the pump radiation source (PLI) and the radiation receiver (PD) and at least part of the evaluation circuit (VI, Ml, TP, G) are located within the body of the guitar or below the fingerboard of the guitar spatially separated from the sensor element. All that is required is a small hole for attaching the optical waveguide (LWL) in order to optically couple the sensor element with the pump radiation source (PLI) and with the radiation receiver (PD) and thus operate the sensor system. This results in new design options for the appearance of a guitar or other stringed instruments such as harps, string instruments, pianos and other musical instruments, etc.

The coupling of several sensor elements, for example several diamonds with NV centers, is preferably carried out to a pump radiation source (PLI). The pump radiation source (PLI) can be located outside the musical instrument or the relevant device and can be coupled to the musical instrument or the relevant device with an optical waveguide (LWL). It is also possible to use a radiation receiver (PD) for receiving the

To use fluorescence radiation (FL) of the paramagnetic centers (NV1) of several spatially separated sensor elements with paramagnetic centers (NV1), preferably several diamonds with NV centers. The reception of fluorescent radiation (FL) by the or the

The radiation receiver (PD) can thus take place outside the musical instrument or the relevant device.

A preferred variant is the pump radiation (LB) of the pump radiation source (PLI) with the sensor element and the fluorescence radiation (FL) of the paramagnetic centers (NV1) of the

To couple the sensor element with the radiation receiver (PD) via a common optical waveguide (LWL), for example a glass fiber. Instead of coupling via a single optical waveguide (LWL), it is also conceivable to use the pump radiation (LB) of the

Pump radiation source (PLI) with the sensor element by means of a possibly on the

Pump radiation wavelength (l _{r [gir} ) of the pump radiation (LB) of the pump radiation source (PLI) optimized first optical waveguide (LWL1), for example a first glass fiber, to couple and the fluorescence radiation (FL) of the paramagnetic centers (NV1) of the sensor element with the

To couple the radiation receiver (PD) via a second optical waveguide (LWL2), for example a second glass fiber, optimized to the fluorescence radiation wavelength (l ^) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) Excitation by pump radiation (LB) and detection of fluorescence radiation (FL) by the radiation receiver (PD) via a photonic are preferred

Optical waveguides take place, which separates both an excitation and a fluorescence branch, for example via a wave coupler.

Microphones and musical instruments with quantum technology pickups The proposals presented here can therefore also relate to a ferromagnetically coated string as an example of a mechanically oscillatory system (MS) for string instruments, the oscillations of which are detected with a first modulation of a first modulation frequency by a sensor system proposed here. A magnetic membrane or a ferromagnetic membrane in a magnetic circuit with an excitation by a permanent magnet or other mechanically movable or oscillatable device parts that are coupled to a mechanically oscillating system via air or another medium can also be considered as an oscillating system. For example, a magnetic membrane or a ferromagnetic membrane in a magnetic circuit, when used together with one or more of the sensor systems presented here, can represent a microphone and be used in this way.

In the context of this disclosure, a method for converting acoustic or other mechanical vibrations and / or position information and / or

Position change information of, for example, a ferromagnetic measurement object in optical signals and / or digital electrical signals and / or analog electrical signals is proposed that includes the following steps, among others:

A first step is the generation of a magnetic flux density B modulated with a first modulation signal, which can also be constant. The cause of this modulation with a first modulation signal and a first modulation spectrum at first modulation frequencies can also be a mechanical oscillation with a first oscillation spectrum at first

Be oscillation frequencies, the first modulation spectrum being the first

Modulation frequencies of the first oscillation spectrum at first oscillation frequencies typically depends. The vibration spectrum can have a constant component. A second step is to acquire this with the first modulation spectrum at the first

Modulation frequencies modulated magnetic flux density B by means of a paramagnetic Centers (NV1) in a device based on diamagnetic material and conversion of the detected value of the modulated magnetic flux density B into an optical signal and / or an electrical, for example digital signal, in particular a receiver output signal (SO) or a sensor output signal (out), and / or an analog electrical signal, in particular into an analog and / or digital sensor output signal (out) by means of this device.

In the case of a musical instrument such as a guitar as an example of a mechanical oscillating system, for example, the generation of a second, with the first

Modulation signal modulated flux density component B _{m of} the magnetic flux density B by means of a first field source (MGI) of an electric and / or magnetic field, which with the

mechanical system is coupled.

The generation of a further, first flux density component B _{0 of} the magnetic flux density B, which is superimposed on the second flux density component B _{0 of} the magnetic flux density B modulated with the first modulation signal, is preferably generated by means of a second source (MG2) of an electric and / or magnetic field, that is not linked to the mechanical system. This second magnetic field source (MG2) preferably brings the sensor system into the optimum operating point range of FIG. 28, the magnetic flux density B of the operating point typically corresponding to the first flux density component B ₀ . The second magnetic field source (MQ2) is preferably a permanent magnet or an electrically energized compensation coil (LC). The first flux density component B ₀ is preferably generated by means of a permanent magnet and / or an electrically energized compensation coil (LC). With the electrically powered

Compensation coil (LC) can be a single line. Is preferred

Compensation coil (LC) energized with an electric current through a controller (RG), which depends on the sensor output signal (out) and / or the filter output signal (S4) and from a controller (RG) depending on the value of the deviation determined by the device the detected magnetic flux density B is generated from an operating point value, for example the value of the first flux density component (B ₀ ). The paramagnetic center (NV1) or the paramagnetic centers (NV1) are preferably placed so close to this line, which can also be a straight line, that they are in the magnetic near field of the line, which decreases by 1 / r, where r stands for the distance between the respective paramagnetic center (NV1) and a conductor, which may form the compensation coil (LC). Thus, the setting of the operating point for using the paramagnetic center or centers (NV1) is by using a second one Field source (MG2) in combination with a first source (MGI) is a very important step towards optimizing the sensitivity. This setting can be made as already described by

Permanent magnets and / or electromagnets, so for example energized coils (LI to L7, LC) and / or lines take place.

Another variant of the device comprises a pump radiation source (PLI), for example a laser and / or an LED, and a diamagnetic material (MPZ) as a sensor element, as well as a radiation receiver (PD). Furthermore, this exemplary device comprises a mechanical system (MS) and a first field source (MQ1). The diamagnetic material (M PZ) again has one or more paramagnetic centers (NV1). The pump radiation source (PLI) emits a pump radiation (LB) suitable for the paramagnetic center or centers (NV1) with a pump radiation suitable for exciting the paramagnetic center or centers (NV1)

_Pump radiation _wavelength (l _rigir ). The paramagnetic center or centers (NV1) are irradiated by the pump radiation (LB) and therefore emit fluorescence radiation (FL) with a fluorescence radiation wavelength (1h). The first field source (MQ1) is preferably mechanically coupled to the mechanical system (MS). The first field source (MGI) can be, for example, the ferromagnetic material of a guitar string or a rotor of an electrical machine or another vibratory device element made of ferromagnetic material of another mechanical device and possibly a permanent magnetic device. Quite generally, a first field source (MGI) means a non-restricted source of a modification of the magnetic flux density B at the location of the paramagnetic center or centers (NV1). The mechanical system (MS) allows a movement and / or acceleration and / or rotation of the first field source (MQ1) relative to the

diamagnetic material (MPZ) in the sensor element and / or causes it. The

Radiation receiver (PD) detects the fluorescence radiation (FL), typically the intensity (l _fl ) of the fluorescence radiation (FL) and converts the detected intensity value (In) of the fluorescence radiation (FL) into a receiver output signal (SO), which is in particular digital and / or can be analog. It can also be a memory value in a

Acting signal processing device for retrieval and / or further use

Device parts, users or externally, for example via a data bus accessing devices is kept ready. The device preferably comprises a first filter (Fl), the first filter (Fl) im

Essentially prevents pump radiation (LB) from reaching the radiation receiver (PD). The first filter (Fl) essentially does not prevent fluorescence radiation (FL) from being

Radiation receiver (PD) reached. In connection with the first filter (F1) in this document, this essentially means that the low attenuation of the fluorescent radiation (FL) that typically occurs nevertheless does not impair the functionality of the respective device. When using NV centers as paramagnetic centers (NV1), the pump radiation (LB) preferably has a pump radiation _wavelength (l _rGhr ) between 500-600 nm

Pump radiation is preferred as green pump radiation in the sense of the function of this radiation in this document. Reference is expressly made to the other remarks on this point in this document. It is preferably the diamagnetic material (MPZ) that the

Sensor element comprises around diamond and around NV centers in this diamond material for the paramagnetic center or centers.

In particular, the paramagnetic center (s) (NV1) is preferably one or more NV centers in one or more diamonds and the diamond (s) is a diamond with an at least local content of NV centers in a region from 0.1 ppm to 500 ppm and possibly more, i.e. around one HD-NV diamond in the sense of this document.

In particular, the paramagnetic center or centers (NV1) are preferably one or more NV centers in one or more diamonds and the diamond or diamonds are artificially produced by means of a high-pressure-high-temperature process.

In some applications, the movement of the first field source (MQ1) relative to the sensor element with the diamagnetic material (M PZ) is periodic. This applies, for example, to the said exemplary steel side of the exemplary guitar (GT). Analogously, this can also be understood as a periodic movement of the first field source (MQ1) relative to the sensor element with the diamagnetic material (MPZ), which is based on a mechanical oscillation and / or a rotation of at least one device part of the mechanical system (MS), for example the said string of said exemplary guitar (GT). It then involves a movement of the first field source (MQ1) relative to the sensor element with the diamagnetic material (MPZ), which is periodic and which is based on a mechanical oscillation and / or rotation of at least one device part of the mechanical system (MS). This device part and / or the mechanical system (MS) is, for example, a vibrating side of a musical instrument or a rotating and / or vibrating test specimen of a measuring device (for example a rotary position sensor) or a rotating and / or vibrating wheel or gear or a rotating and / or vibrating circular disk or a rotating and / or vibrating rotor or other device part of a motor, in particular an electric motor or an internal combustion engine or a turbine or a rocket engine, or another rotating and / or vibrating device part of an engine, in particular an electric motor or an internal combustion engine or a turbine or a rocket engine, or a rotating and / or vibrating device part of a vehicle or a rotating and / or

vibrating device parts of a machine or the rotating and / or vibrating

Measuring disk of an angle measuring device and / or a vibrating membrane and / or a vibrating part of a building and / or a vibrating part of the ground. The invention thus also relates to microphones, seismometers, geophones, tachometers, rotor position sensors for motors and their control devices, vibration measuring devices, etc. A translational movement in the sense of this document is a rotation with an infinite radius.

Monitoring mechanical systems in extreme environments

As a further embodiment, a sensor system as proposed here can be used for

Quality control of mechanical systems such as gear units or motors can be used.

A particular advantage here is the spatial separation of the sensor element, for example diamond, by means of one or more optical waveguides and the electronic evaluation and irradiation unit. This enables the use of the sensor element to detect the

magnetic flux density B in environments that cannot be used for electronic components, such as at higher than extreme temperatures or a high ionizing radiation level. The sensor elements for detecting the magnetic flux density B or other, the

Intensity (l _fl ) of the fluorescence radiation (FL) influencing physical parameters are used. This can also be done, for example, in boreholes, in particular under high pressure and / or high temperature and / or in environments with caustic and / or abrasive

Liquids such as hot salt water / oil / sand / gas mixtures occur at great depths, for example as part of a borehole probe. As a further embodiment of the microphone variant, a proposed sensor system can be used to detect sudden pressure differences, for example to trigger airbag systems.

Another embodiment is to use a proposed sensor system for monitoring medical parameters. If the sensor element is attached to an optical waveguide, the sensor element with the paramagnetic centers (NV1) can be brought into the vicinity of the organ to be measured, for example the heart or the brain, via the vessels, and there it can detect bioelectrical signals or irradiating radiation, in particular ionizing radiation Detect radiation such as neutrons, electrons and positrons, elementary particles, ions, alpha radiation, gamma and X-ray photons and, if necessary, use them for dose measurement, for example within a living body, for example in medicine. A sensor system as proposed can also be used can be used to control a pacemaker.

A wide application is the use of a proposed sensor system in the microphone variant as a hearing aid. The low weight and the direct conversion of the acoustic signals into digital signals result in a low-noise recording.

Since diamond is used just like the material of most fiber optic cables (LWL1,

LWL2) is biocompatible and the sensor element of the detection unit comprising the

Pump radiation source (PLI), the radiation receiver (PD) and the evaluation circuit (G, VI, Ml, TP) can be operated separately, the sensor element can be used as an at least temporarily invasive implant in the inner ear or at other parts of the body, e.g. with the aid of one or more optical waveguides (LWL1, LWL2) can be used.

Sensor system with compensation coil (LC)

The special feature of the variant of the sensor system presented here is that the sensor system can comprise means, in particular a controller (RG) and / or in particular a compensation coil (LC) and / or a permanent magnet, to detect the change in the intensity (l _fl ) of the To maximize fluorescence radiation (FL) with a change in the magnetic flux density B at the location of the paramagnetic center or centers (NV1) based on the respective application. Ie by subtracting or adding a quasi-static component of the magnetic flux B, the total magnetic flux density B at the location of the paramagnetic center is shifted in the direction of an operating point which is at an optimized distance from the point of maximum sensitivity (see FIG. 28b). This makes use of the fact that the paramagnetic centers (in the case of FIG. 28b, these are NV centers in diamond) couple with a sufficiently high local NV center density, such as in an FID-NV diamond, and thus generate collective effects of groups of paramagnetic centers . These lead to the modulation of the sensitivity even when the first and second directions are decalibrated.

If this working point setting B _{0 of} the magnetic flux density B by means of a

Compensation coil (LC) made, it makes sense to energize it with an electric current, which is derived from the measured value of the magnetic flux density B, i.e. the filter output signal (S4) of the filter, for example the loop filter (TP), so that the magnetic field of the compensation coil (LC) such a change in the magnetic flux density B at the location of the paramagnetic centers (NV1) and / or at the location of the groups (NVC) of para-magnetic centers (NV1) by means of a current supply to the compensation coil (LC) by a controller (RG ), whose actual value signal depends on the filter output signal (S4) or a functionally equivalent signal, is compensated. A controller (RG) preferably derives the corresponding operating point control signal (S9) from the filter output signal (S4). This stabilizes the magnetic working point setting of a magnetic working point flux density in the form of a bias flux density (B ₀ ). The regulator (RG) preferably has a low-pass characteristic or, better, an integrating characteristic. The regulation by the controller (RG) takes place preferably with a first time constant Xi, while the compensation regulation by means of the loop filter (TP) takes place with a second time constant x ₂ . That is, a first sensor output signal (out) reflects the short-term changes in an alternating magnetic flux density field, while a second sensor output signal (out ") reflects the long-term changes or the current quasi-static operating point of the sensor system. In order for this to be possible, the first time constant Xi is preferably greater than the second time constant t ₂ (xi> x ₂ ) _. The controller is preferably a PI controller or another suitable controller, but other controllers can be used.

Number of coupled NV centers

As described above, the coupling of the paramagnetic centers (NV1), in particular the NV centers, leads to a sensitivity of the intensity (l _fi ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) to a change even when the crystal alignment is decalibrated the magnetic flux density B at the location of the paramagnetic center or centers (NV1). It is therefore important that at least two, better at least 4, better at least 4, better at least 8, better at least 20, better at least 40, better at least 100, better at least 200, better at least 400, better at least 1000 paramagnetic centers (NV1) with each other are coupled to achieve this effect. Accordingly, it makes sense if the previously described methods include one or more additional steps to couple at least two, better at least 4, better at least 4, better at least 8, better at least 20, better at least 40, better at least 100, better at least 200, better Include at least 400, better at least 1000 paramagnetic centers (NV1). The device is preferred for a

Temperature> -40 ° C and / or> -0 ° C and / or> 20 ° C in order to avoid cooling devices.

Such a coupling of a large number of NV centers is very easily possible in HD-NV diamonds with a high density of NV centers.

This coupling can also take place via optical functional elements of the integrated circuit (IC), for example optical waveguides, which are manufactured in micro-optics on or in the integrated circuit (IC), and / or via optical functional elements of the housing.

Contrast Nonlinearity (KT)

The contrast (KT) is here as the maximum intensity (l _fl ) of the fluorescent radiation (FL) at the magnetic flux density B of this maximum intensity (l _fl ) of the fluorescent radiation (FL) divided by the limit value of the intensity (l _{f |} ) of the fluorescent radiation (FL ) to large magnetic flux densities B (see Figure 28).

The contrast (KT) depends non-linearly on the intensity (I _pmp ) of the pump radiation (LB). In order to achieve maximum contrast (KT), the following measures are therefore important and useful: i. Maximizing the pump radiation power of the pump radiation source (PLI),

ii. Maximizing the rate of increase in the pump radiant power

Pump radiation source (PLI) when switching on the pump radiation source (PLI) in order to avoid low pump radiation _intensities (l _pmp ) of the pump radiation (LB) that _differ from zero, iii. Maximizing the rate of decay of the pump radiant power

Pump radiation source (PLI) when switching off the pump radiation source (PLI) in order to avoid low pump radiation _intensities (l _pmp ) of the pump radiation (LB) that _differ from zero,

iv. Minimizing the irradiated sensor element volume by focusing the

Pump radiation (LB) by means of a collimator optics preferably on a focal point the size of less than 100, better less than 50, better less than 20, better less than 10, better less than 5, better less than two, better less than one, better less than half a pump radiation _wavelength (l _rirr ) of the pump radiation (LB),

v. Minimization of the irradiated sensor element volume by minimizing the thickness of the volume of the sensor element filled with paramagnetic centers (NV1) or groups (NVC) of paramagnetic centers (NV1) to less than two, better less than one, better half a pump radiation _wavelength (l _rirr ) of the pump radiation (LB) as the thickness of such a volume,

vi. Maximizing the density of paramagnetic centers (NV1) in the irradiated

Sensor element volume e.g. through the use of HD-NV diamonds,

vii. Maximizing the coupling of the pump radiation power (l _pmp ) of the pump radiation (LB) of the pump radiation source (PLI), preferably through a favorable choice of the angle of incidence with respect to the surface (OFL1) of the sensor element, in particular the surface (OFL1) of a diamond if a diamond is used as a sensor element , and if necessary by

Anti-reflective measures and / or wave resistance adjustments and, if necessary, by taking into account interference from reflections within the sensor element.

The pump radiation sources (PLI) are preferably pulse-modulated, that is to say pulsed, operated. As a rule, the limiting operating parameters of the pump radiation source (PLI) are a maximum mean power and a maximum operating voltage, which, if exceeded, lead to various types of damage to the pump radiation source (PLI). In order to achieve a maximum pump radiation power of the pump radiation (LB) during the irradiation of the paramagnetic centers (NV1), it was recognized that, in order to further maximize the contrast (KT), it is useful to pulse the pump radiation source (PLI) with maximum operating voltage for a short time operate and to increase the distance between the pulses so that the maximum mean power of the pump radiation source (PLI) is again undercut. Thus it was recognized that, in contrast to the figures of this document, a deviation of a 50% duty cycle of the alternating component (S5w) of the transmission signal (S5) in favor of more radiation-intensive and shorter pump radiation pulses of the pump radiation source (PLI) is useful and helpful.

In addition, it was recognized that the

Pump radiation (LB) in the material of the sensor element, for example in an HD-NV diamond, in order to further maximize the contrast (KT), it is advantageous to carry out an optical adjustment. This optical adaptation can manipulate the polarization of the pump radiation (LB), for example by a l _{r [gir} / 4-Rΐ0ΐΐoIΐqh, but also the angle of incidence (0 _e ) of the pump radiation (LB) relative to the

Normal vector (J ^) of the surface (OFL1, OFL2) of the sensor element, but also an anti-reflective coating or matching layer (ASv, ASr) of the surface (OFL1, OFL2) of the sensor element, for example the surface (OFL1, OFL2) of an HD-NV - diamonds, include. Such an anti-reflective coating or matching layer (ASv, ASr) in the sense of this disclosure can also have a structuring of the surface (OFL1, OFL2) with structures smaller than that

_Pump radiation _wavelength (l _rigir ) which can lead to a local change in the effective mean refractive index of the surface (OFL1, OFL2) of the HD-NV diamond and can thus be used for this adaptation.

It is also useful if, when the pump radiation (LB) is reflected within the sensor element, constructive interference is achieved, in particular by a resonator in the area of the highest density of paramagnetic centers (NV1). If the sensor element is, for example, an HD-NV diamond in the form of a flat plate, in the upper side of which the pump radiation (LB) of the pump radiation source (PLI) is incident vertically over its first surface (OFL1), for example, and if the first surface (OFL1) of the upper side is optically plane-parallel to the second surface (OFL2) of the underside, it is particularly advantageous if the thickness of the plate is selected so that the plate of the resulting Fabry-Perrot interferometer has a maximum transmission of the first surface (OFL1) for Radiation of the pump radiation _wavelength (l _rirr ), since then the entire pump radiation power or at least a maximum of the pump radiation power penetrates into the plate. The paramagnetic centers (NV1), in the case of an HD-NV diamond, these are NV centers, are preferably in a thin, preferably layered group (NVC) of paramagnetic centers in the plane of the maximum pump radiation amplitude within the resonator thus formed in the form of the example here Fabry-Perrot resonator arranged. If the sensor element plate, here an exemplary diamond plate, has a greater thickness, so For example, several levels of maximum pump radiation _intensity (l _pmp ) of the pump radiation (LB) can also be located in this irradiation _situation of perpendicular incidence of the pump radiation (LB) on the first surface (OFL1) of the sensor element plate within the Fabry-Perot resonator of the sensor element plate. The paramagnetic centers (NV1), in the case of an FID-NV diamond, these are NV centers, are then preferably in several thin, preferably layered groups (NVC) (clusters) of paramagnetic centers (NV1) and preferably over an extent d of such groups (NVC) paramagnetic centers (NVC) arranged in this plane of the maximum pump radiation amplitude within the Fabry-Perrot resonator. In order to double or even better multiply the utilized pump radiation power (l _pmp ) of the pump radiation _source (PLI), it makes sense to place the second surface (OFL2) on the underside of the

To mirror the sensor element plate and thus cause a total reflection. The coupling of the pump radiation (LB) of the pump radiation source (PLI) is optimized with respect to the losses through the anti-reflective layer or front matching layer (ASv) of the first surface (OFL1) on the upper side of the sensor element plate. Since the fluorescence radiation (FL) must also be decoupled, the transmission of the Fabry-Perrot interferrometer must be set up in such a way that it can leave the sensor element plate, for example the HD-NV diamond plate, at a predetermined angle with good transmission.

To minimize the rise and fall times of the intensity (l _pmp ) of the pump radiation (LB) from switched laser diodes to further maximize the contrast (KT), the increase in the operating voltage and the controlled, rapid regulation of the diode current of the diode laser serving as pump radiation light source (PLI) when controlling the pump radiation source (PLI).

To further maximize the contrast (KT), the high density of the paramagnetic centers (NV1) is preferably only generated in a thin layer under the first surface (OFL1) of the sensor element, for example in a thin layer in an HD-NV diamond, while the remaining volume preferably has no paramagnetic centers (NV1) or only a few paramagnetic centers (NV1).

To further maximize the contrast (KT), the same first surface (OFLl) of the sensor element, for example an HD-NV diamond, is preferably used for the exit of the fluorescence radiation (FL), via which the pump radiation (LB) also enters the Sensor element (for example, into the HD-NV diamond, took place. Sensor system with hold circuit

The holding circuit (S&H) already explained above can in itself lead to a considerable improvement.

Furthermore, the proposal presented here therefore includes an integrated circuit (IC) for use with a paramagnetic center (NV1) in the material of a sensor element with a driver for operating a pump radiation source (PLI) for pump radiation (LB) and with a receiver (PD1), for the detection of fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) and with a control and evaluation unit (LIV) for generating a sensor output signal ( out), which depends on the fluorescence radiation (FL) of the paramagnetic center (NV1) in the material of a sensor element. The sensor element is preferably a diamond crystal. The paramagnetic center or centers (NV1) are preferably one or more NV centers and / or one or more groups of NV centers in one or more

Diamond crystals.

The radiation receiver (PD) is preferably provided and suitable for essentially not detecting the pump radiation (LB) in the sense of said selectivity. The integrated circuit (IC) furthermore preferably comprises a control and evaluation unit (LIV) (Ml, TP, M2, G) for generating a sensor output signal (out) which is generated by the fluorescence radiation (FL) of the

paramagnetic center (NV1) in the material of a sensor element and / or

quantum technological device element depends. The integrated circuit (IC) now preferably also has the aforementioned holding circuit (S&H). The hold circuit (S&H) has an input and an output. The holding circuit (S&H) is preferably connected in the signal path between the radiation receiver (PD) and the sensor output signal (out). A holding circuit (S&H) is preferably inserted into the signal path between the first multiplier (M 1) and the loop filter (TP), which can also be designed as an integrator, and / or after the loop filter (TP) and / or integrator. The holding circuit (S&H) holds its output signal at its output essentially constant for the first time, i.e. it virtually freezes it. The holding circuit (S&H) changes in second time periods, which are different from the first time periods, its output signal at its output as a function of the signal at its input in such a way that it then a

Has output signal, the output value of which is essentially preferably in the form of a linear one Mapping depends linearly on the input value at the input of the hold circuit. So it is more or less transparent in these second periods.

The sensor element and / or quantum technological device element is preferably a diamond crystal, the paramagnetic center (NV1) preferably being an NV center and / or an ST1 center in the diamond crystal.

Control of the radiation source (H)

So far, the intensity (l _pmp ) of the pump radiation (LB) of the pump radiation source (PLI) has been kept constant and the intensity (1 ^) of the pumping radiation (LB) modulated complementarily

Compensation radiation (KS) of the compensation radiation source (PLK) readjusted so that the receiver output signal (SO) of the radiation receiver (PD) no longer had any components of the transmission signal (S5) apart from signal noise and a control error.

In contrast to this, the intensity (l _ks ) of the compensation radiation (KS) is now the

Compensation _{radiation source} (PLK) kept constant and the intensity (l _pmp ) of the for

Compensation radiation (KS) complementary modulated pump radiation (LB) of the

Pump radiation source (PLI) readjusted so that the receiver output signal (SO) of the

Radiation receiver (PD) has no more components of the compensation transmission signal (S7) apart from signal noise and a control error and possibly a direct component.

In the previously presented method for operating a sensor system and / or quantum technological system, the sensor system and / or quantum technological system comprises one or more paramagnetic centers (NV1) or one or more groups (NVC) of paramagnetic centers (NV1) in the material of a sensor element and / or

quantum technological device element that is part of the sensor system and / or

quantum technological system is. As a step, the method comprises the modulated transmission of a modulated compensation radiation (KS) by the compensation transmitter (PLK), this modulation of the intensity (l _ks ) of the compensation radiation (KS) of the compensation transmitter (PLK) being modulated by means of a compensation transmission signal (S7) which controls the compensation transmitter (PLK). In contrast to the previously presented method, this method now regulates by means of the transmission signal (S5) and not by means of the compensation transmission signal (S7). The

Compensation transmission signal (S7) is thus operated quasi-statically unchanged in this method. Both basic procedures can, however, be combined, whereby a rule must be specified in which way the compensation transmission signal (S7) and / or the transmission signal (S5) are to be regulated. In the example discussed here in this section, the transmit signal (S5) is used instead of the

Compensation transmission signal (S7) regulated. These control methods can be mixed. Regulation of the transmission signal is useful when the intensity (l _fl ) of the fluorescence radiation (FL) is high, while regulation of the intensity (l _ks ) of the compensation radiation (KS) is useful when the intensity is low

Intensities (l _fl ) of the fluorescence radiation (FL) typically makes sense. The change between these two control modes typically takes place as a function of the intensity (l _fl ) of the fluorescence radiation (FL) and of the intensity (l _ks ) of the compensation radiation (KS). Therefore, the method discussed here in this section comprises the generation of modulated fluorescence radiation (FL) by means of one or more paramagnetic centers (NV1) or by means of a group or more groups (NVC) of paramagnetic centers (NV1) in a material of a sensor element and / or quantum technology Device element that depends on a modulated pump radiation (LB) and possibly other parameters, in particular the magnetic flux density B. Here, too, there is a superimposed, in particular a summing superimposed, reception of the modulated fluorescence radiation (FL) and the

Compensation radiation (KS) and the generation of a receiver output signal (SO) as a function of this superposition in the radiation receiver (SD). A correlation of the receiver output signal (SO) with the compensation transmission signal (S7) is now carried out in an analogous manner, in particular with the aid of a synchronous demodulator (Ml, TP), to form a filter output signal (S4). The filter output signal (S4) is now preferably sampled, in particular by means of a hold circuit (S&H), with the determination of a sequence of sampled values. As a result, the traces of the compensation transmission signal (S7) in the sensor output signal (out) are erased or massively suppressed. The following is the use of the sequence of sample values adjusted in this way as

Sensor output signal (out). A complex feedback signal (S8) modulated with the compensation transmission signal (S7) is now generated with the aid of this sensor output signal (out) and the transmission signal (S5) is formed from the feedback signal (S8), in particular by offset addition and / or power amplification. A pump radiation source (PLI) is then controlled with the transmission signal (S5) formed in this way and a complementary one is sent out

Compensation transmission signal (S7) modulated and in intensity (I _pmp ) regulated pump radiation (LB) by the pump radiation source (PLI) for pump radiation (LB), in particular by an LED or by a laser, depending on the transmission signal (S5). The correlation is preferably carried out with the steps of multiplying the

Receiver output signal (SO) with the compensation transmission signal (S7) to the filter input signal

(53) and filtering and / or integrating the filter input signal (S3) with a loop filter (TP) and / or integrator for the filter output signal (S4), in particular the filter output signal

(54) can be multiplied by a factor of -1.

The complex feedback signal (S8) is preferably formed by multiplying the filter output signal (S4) with the compensation transmission signal (S7) to form the complex feedback signal

(55).

The gain, the frequency responses of the components in the signal path and the signs within the respective transfer functions of the signal processing components, i.e. the

Parts of the device, the control circuit, are chosen so that stability is achieved.

Applications

In important applications, such as measuring the position of

Device parts for control elements, machines, robots, electric motors or

Internal combustion engines, the generation and / or modification and / or modulation of the magnetic field in the form of the magnetic flux density B can be periodic. The periodicity can be attributed to an electrical and / or mechanical oscillation and / or a mechanical movement along a closed path.

Others

The term sensor system in this description also includes systems that make use of quantum properties in general. This particularly applies to systems that

Carry out and / or evaluate and / or detect and output modifications to quantum states of the paramagnetic centers. These systems are part of the technical teaching disclosed here.

The principles and features mentioned in this disclosure can be combined with one another, provided the result is meaningful. advantage

The detection and recording of acoustic mechanical vibrations can be carried out achromatically without influencing the mechanical vibrations. In addition, the sensors show no signs of aging, are in harsh environments such as air with high

Salt water concentrations, can be used with ionizing radiation or at high temperatures. The sensors can be miniaturized to a volume of 10 μm ³ and the sensor is separated from the electrical evaluation unit by a light guide so that it can be used for medical purposes, for example. A housing, as proposed here, and the sensor built on it, enables, at least in some implementations, the compact structure and the combination of conventional ones

Circuit technology with quantum sensors. The advantages are not limited to this.

List of figures

The features and further advantages of the present invention will become clear below on the basis of the description of preferred exemplary embodiments in connection with the figures. Purely schematically show:

Figure 1

shows an evaluation circuit according to the prior art (SdT).

Figure 2

shows an evaluation circuit according to the state of the art (SdT) and largely corresponds to FIG. 1 with the difference that the sensor system does not include a first adapter circuit (OF1) and the signal generator (G) generates the transmission signal directly.

Figure 3

FIG. 1 shows the sensor system of FIG. 1 with the difference that a sensor element is now used that has a high density of paramagnetic centers (NV1) at least locally in part of the sensor element.

Figure 4

FIG. 2 shows the sensor system of FIG. 2 with the difference that a sensor element is now used that has a high density of paramagnetic centers (NV1) at least locally in part of the sensor element. Figure 5

shows a basic sensor system claimed here, which is then further refined in the following figures.

Figure 6

uses the measurement signal (M ES) to show when the receiver output signal (SO) of the

Radiation receiver (PD1) is evaluated in relation to the activity of the pump radiation source (PL). Figure 7

shows an exemplary simple system for an exemplary partial function of an integrated circuit (IC) for operating the sensor systems presented, with the compensation and

Feedback in the control loop takes place electronically via a first adder (A1).

Figure 8

corresponds to FIG. 7 and is supplemented by the flip circuit (S&FI) and the trigger signal (STR), which is generated by the signal generator (G) preferably in phase synchronization with the transmission signal (S5), preferably at the end of the signal period (T _p ).

Figure 9

8 shows the system of FIG. 8 with the difference that the feedback signal (S6) is not fed back electrically via a first adder (A1), but via a reference noise source (PLK, KS) in order to implement a thickness amplifier.

Figure 10

shows, in an analogous manner to the difference between FIG. 7 and FIG. 8, the system of FIG. 9 supplemented by the fold circuit (S&FI) and the trigger signal (STR).

Figure 11

shows an exemplary signal scheme that matches FIGS. 9 and 10 with exemplary levels for clarification that are chosen completely arbitrarily. In reality, other levels are likely to occur, depending on the selected gains, offsets, etc.

Figure 12

corresponds essentially to FIG. 11, but in contrast to FIG. 11, the intensity (l _s ) of the compensation radiation (KS) of the compensation radiation _source (PLK) is not regulated and the intensity (l _pmp ) of the pump radiation _source (PLK) is kept constant, but the intensity (l _pmp ) of the pump radiation (LB) of the pump radiation source (PLI) is regulated and the intensity (1 ^) of the compensation radiation _source (PLK) is kept constant.

Figure 13

shows an exemplary signal scheme matching FIG. 12 with exemplary levels for

Clarification, whereby the levels are chosen completely arbitrarily. In reality, other levels are likely to occur, depending on the selected gains, offsets, etc. Figure 14

corresponds to FIG. 10 with the difference analogous to the difference between FIGS. 6 and 7, with a flip circuit (S&FI) being inserted again, which is controlled by the signal generator (G) by means of a trigger signal (STR).

Figure 15

corresponds largely to FIG. 10, with the difference from FIG

Compensation path is designed in the same way as the transmission path and now the compensation transmitter (PLK) pumps one or more paramagnetic reference centers (NV2) and / or a group or groups (NVC2) of paramagnetic reference centers (NV2), which then emit compensation fluorescence radiation (KFL) which are then used for compensation instead of the compensation radiation (KL) by irradiating the radiation receiver (PD) with this compensation fluorescence radiation (KFL) and for a typically summed-over reception of this overlay of the compensation fluorescence radiation (KFL) and the

Fluorescence radiation (FL) in the radiation receiver (PD) leads, so that a thickness amplifier system is created.

Figure 16

shows the regulation of the intensity (l _pmp ) of the pump radiation (LB), the difference between Figure 15 and Figure 16 corresponding to the difference between Figure 10 and Figure 12, so that while in Figure 15 the intensity (1 ^) of the compensation radiation (KS) is regulated, in Figure 16 the intensity (l _pmp ) of the pump radiation (LB) is regulated.

Figure 17

corresponds to an expanded system of FIG. 7, the system of FIG. 17 having a second analysis path which can be used, for example, to determine the fluorescence phase shift time (ATFL).

Figure 18

shows the exemplary sensor system structure of FIG. 17 with one holding circuit in each control branch.

Figure 19

shows exemplary signal profiles with exemplary signals for a sensor system corresponding in its structure to that of FIGS. 17 and 18. Figure 20

also corresponds to an expanded system of FIG. 7, the feedback now not taking place optically but electrically.

Figure 21

FIG. 20 shows the exemplary sensor system structure of FIG. 20 with one folding circuit in each control branch.

The figure 22

corresponds to FIG. 21, a first filter (F1) now being inserted by way of example. The first filter (Fl) is. Figure 23

shows exemplary signals for the sensor systems of FIGS. 20 to 22.

Figure 24

corresponds to FIG. 20 with the difference that the first filter (F1) is provided and that the compensation path (PLK, KS, NV2, KFL, F1, PD) is designed as an ideal reference noise source. Figure 25

FIG. 24 shows the exemplary sensor system structure of FIG. 24 with a folding circuit in each control branch.

Figure 26

shows exemplary signals for the sensor systems of FIGS. 24 to 25. FIG. 27

shows the dependence of the intensity (l _fl ) of the fluorescence radiation (FL) on the magnetic flux density B when the two directions are tilted - the axis of the NV center and the axis of the magnetic flux density B relative to one another.

Figure 28a

shows the resulting course of the intensity (l _fl ) of the fluorescent radiation (FL) of the

paramagnetic center (NV1) when decalibrating the alignment

Figure 28b

shows the derivation of the curve in FIG. 28a according to the value of the magnetic flux density B. Figure 29

shows the setting and readjustment of the optimal operating point of a sensor system in the form of a constant magnetic bias flow B ₀ .

Figure 30

shows the system of FIG. 29 supplemented by the folding circuit (S&FI) and the trigger signal (STR).

Figure 31

corresponds largely to FIG. 10 with the difference that the said controller (RG) now controls the magnetic operating point of the in cooperation with a compensation coil (LC)

Readjusts the sensor system. Figure 32

corresponds to the exemplary combination of FIG. 31 and FIG. 25, the controller (RG) also using a further compensation coil (LC) to readjust the magnetic flux density B at the location of the paramagnetic reference center or centers (NV2).

FIG. 33 shows a possible mechanical structure of a proposed compact system.

Figure 34

shows a suitable, so-called open-cavity housing from above.

Figure 35

shows the exemplary housing of Figure 34 in cross section. Figures 36 to 46

describe an exemplary assembly process for a proposed sensor system in a proposed housing.

Figure 47

corresponds largely to FIG. 46 with the difference that the sensor element with the paramagnetic center or centers (NV1) is not attached to the radiation receiver (PD), but rather to the pump radiation source (PLI) in order to increase the contrast (KT). Figure 48

shows the inside of the housing cover (DE) as a further exemplary alternative placement option for the sensor element with the paramagnetic centers (NV1).

Figure 49

shows the test of a proposed sensor system.

Figure 50

shows a basic process sequence for producing a sensor system.

FIG. 51 shows the exemplary sequence of FIG. 50a once again with various additional steps. Figure 52

shows a sensor system according to FIG. 46 without the first filter (F1) and without the first adhesive (GL1), for example for operation with a system according to FIGS. 20 to 21 or 25.

Figure 53

shows the exemplary housing with the sensor system from FIG. 52 with shielding (MAS) and a separate radiation receiver (PD).

Figure 54

shows the exemplary housing with the sensor system from FIG. 34 with an additional line (LTG), the electrical current of which is to be measured, in a top view before assembly;

Figure 55

shows the exemplary housing with the sensor system from FIG. 52 with the additional line (LTG) compared to FIG. 52, the current of which is to be measured;

Figure 56

shows a lead frame from above.

Figure 57

shows the exemplary lead frame of FIG. 56 in cross section. For the sake of simplicity, the frame of the lead frame is not drawn here and below. Figures 58 to 68

describe an exemplary assembly process for the further proposed system.

Figure 69

shows exemplary steps for the assembly process of FIGS. 58 to 68. FIG. 70

shows an exemplary combination of several flat coils, as they are preferably used in the integrated circuit (IC), for example as its sub-device for generating magnetic fields with multipole moments and / or for modifying the direction of the magnetic flux B at the location of the paramagnetic center (NV1). Figure 71

shows an exemplary sensor element which, with regard to the coupling properties, of

Pump radiation (LB) and the contrast (KT) is optimized.

Figure 72

shows a system of Figure 1, but now in the material of the sensor element

Pump radiation source (PLI) is made.

Figure 73

shows a sensor element, for example for use in systems such as in FIG. 72, in which the pump radiation source (PLI) is manufactured in the material of the sensor element

Figure 74

shows a sensor element with a substrate (D), which in the case of NV centers as paramagnetic centers (NV1) is preferably diamond, with one or more paramagnetic centers (NV1) or one or more groups (NVC) of paramagnetic centers (NV1) in the substrate (D), this being connected to a line (LH) which is attached and fastened on the surface (OFL1) of the substrate (D) and which is preferably electrically insulated from the substrate (D), for example by an insulation (IS) is, due to a very small first distance (dl) of preferably less than 100 nm interact with the magnetic field of this line (LH) when the line (LH) is traversed by an electric current (IH).

Figure 75

shows a sensor element with a substrate (D), which in the case of NV centers as paramagnetic Centers (NV1) is preferably diamond, with one or more paramagnetic centers (NV1) or one or more groups (NVC) of paramagnetic centers (NV1) in the substrate (D), these with a horizontal line (LH), which on the surface (OFL1) of the substrate (D) is attached and fastened and which is preferably electrically isolated from the substrate (D), for example by an insulation (IS), and with a vertical line (LV), which is on the surface (OFL1) of the substrate (D) is attached and fixed and which is preferably electrically isolated from the substrate (D) and the vertical line (LV), for example by an insulation (IS), due to a very small first distance (dl) of preferably less than 100 nm interact with the magnetic field of this vertical line (LV) and / or this horizontal line (LH) when the horizontal line (LH) is traversed by an electrical horizontal current (IH) and / or when the vertical line (LV ) is traversed by an electric vertical current (IV).

Figure 76

shows a sensor element with a substrate (D), which in the case of NV centers as paramagnetic centers (NV1) is preferably diamond, with one or more paramagnetic centers (NV1) or one or more groups (NVC) of paramagnetic centers (NV1) in the substrate (D) and simultaneously with one or more core centers (CI) or one or more groups (CIC) of core centers (CI) in the substrate (D), these two with a horizontal line (LH), which on the surface (OFL1) of the substrate (D) is attached and fastened and which is preferably electrically isolated from the substrate (D), for example by an insulation (IS), and with a vertical line (LV), which is on the surface (OFL1) of the substrate (D) is attached and fixed and which is preferably electrically isolated from the substrate (D) and the vertical line (LV), for example by an insulation (IS), due to a very small first distance (dl) of preferably less than 100 nm with the m agnetic field of this vertical line (LV) and / or this horizontal line (LH) interact when the horizontal line (LH) is traversed by an electrical horizontal current (IH) and / or when the vertical line (LV) by an electrical vertical Stream (IV) flows through.

Figure 77

shows a sensor element with a substrate (D), which in the case of NV centers as paramagnetic centers (NV1) is preferably diamond, with one or more paramagnetic centers (NV1) or one or more groups (NVC) of paramagnetic centers (NV1) in the substrate (D), this with a horizontal line (LH), which is on the surface (OFL1) of the substrate (D) is attached and fastened and which is preferably electrically isolated from the substrate (D), for example by an insulation (IS), and with a vertical line (LV) which is attached and fastened on the surface (OFL1) of the substrate (D) and which is preferably electrically isolated from the substrate (D) and the vertical line (LV), for example by an insulation (IS), due to a very small first distance (dl) of preferably less than 100 nm with the magnetic field of this vertical line (LV) and / or interact with this horizontal line (LH) when the horizontal line (LH) is traversed by an electrical horizontal current (IH) and / or when the vertical line (LV) is traversed by an electric vertical current (IV) In relation to FIG. 75, the vertical line (LV) via a vertical contact (KV) and the horizontal line (LH) via one or more horizontal contacts (KH) are electrically connected to the material of the substrate ts (D) connected to suction photoelectrons.

Figure 78

serves to illustrate an optimal current supply using the example of a quantum bit (QUB) with a first vertical shielding line (SV1) and a second vertical shielding line (SV2). Figure 79

serves to illustrate an optimal current supply using the example of a quantum bit (QUB) with a first horizontal shielding line (SH1) and a second horizontal shielding line (SH2).

Figure 80

shows a control system for a plurality of parametric centers (NV1) or a plurality of groups (NVC) of paramagnetic centers (NV1). FIG. 80 shows the block diagram of an exemplary quantum sensor system with an exemplary schematically indicated three-bit quantum register.

Figure 81

FIG. 82 shows a substrate with two spaced-apart paramagnetic centers (NV11, NV12)

shows the system of Figure 1 adapted to a direct reading of the photoelectrons of the paramagnetic centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1) Fig. 83

shows the exemplary structure of the vibration sensor system according to the proposed method with one coupled to a vibrating mechanical system (MS) (string)

Magnetic field that is detected by the sensor system (pickup).

Figure 84

shows the implementation of an exemplary sensor system (pickup) coupled to a mechanically oscillating system (MS) (string) with stationary field sources (MQ1, MQ2) of the magnetic field and mechanically oscillating device parts of the magnetic circuit.

Figure 85

shows the implementation of an exemplary sensor system with direct reading of the photoelectrons via a contact (KNT).

Figure 86

shows the sensor system in which the sensor element with the diamagnetic material (MPZ) and the paramagnetic center (s) contained therein (NV1) from the pump radiation source (PLI) and the light-sensitive radiation receiver (PD), as well as the evaluation circuit (LIV) through a first optical Optical fiber (LWL1) and a second optical fiber (LWL2) is separated. FIG. 86 shows the material (MPZ) with paramagnetic centers (NV1) separated by a first optical waveguide (LWL1) from the pump radiation source (PLI) with the optional second filter (F2) and separated from the second optical waveguide (LWL2)

Radiation receiver (PD) with a first filter (Fl).

Figure 87

shows a proposed sensor system in which the sensor element with the diamagnetic material (MPZ) with the paramagnetic center or centers (NV1) is separated from the radiation source (PLI) and the light-sensitive radiation receiver (PD) by a common optical waveguide (LWL2).

Figure 88

shows an embodiment of an exemplary sensor system with several measuring systems and an electronic evaluation unit (LIV). FIG. 88 shows the embodiment according to the proposed method with a number n oscillating subsystems (MSI, MS2 ... MSn) of a mechanical oscillating system (MS) with n corresponding to the respective subsystem of the n Subsystems (MSI to MSn) coupled first field sources for magnetic or electrostatic fields (MG11, MG12, MGin) and n sensor elements with a respective diamagnetic material (MPZ1, MPZ2,., MPZn) with respective paramagnetic centers (NV1).

Figure 89

shows the structure of a pickup (PU) of a guitar (GT) according to the proposal. FIG. 89 shows an exemplary electric guitar (GT) as an application of a sensor system according to the proposal.

Figure 90

shows the absorption spectrum of a diamond according to the invention recorded at room temperature. Figure 91

illustrates the definition of times.

FIG. 92 shows the typical course of the contrast (KT) as a function of the intensity (l _pmp ) of the pump radiation (LB) using the example of this dependency when irradiating NV centers as paramagnetic centers (NV1) with "green" pump radiation (LB) ; Figure 93

shows a substrate (D) in which the fluorescence radiation (FL) is removed via a second surface (OFL2).

Figure 94

shows the combination of a paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NV1) of paramagnetic centers in one

Semiconductor material of a semiconducting substrate (D), for example made of silicon or silicon carbide, with a MOS transistor in this material, the shield lines representing the source and drain contacts, while the line forms the gate and through the gate oxide of the material of the substrate (D) is isolated. The pump radiation (LB) is generated by a center (PZ). Figure 95

shows a thickness amplifier with a reference noise source based on a paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NV1) of paramagnetic centers (NV1) Figure 96

shows the system of FIG. 95, with a single pump radiation source (PLI) irradiating the reference element and the sensor element together.

Figure 97

shows a structure of a substrate (D) for a sensor element for reading out the photocurrent of a paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NVC) of paramagnetic centers (NV1).

Figure 98

shows a structure of a substrate (D) for a reference element for reading out the photocurrent of a paramagnetic reference center (NV2) or several paramagnetic reference centers (NV2) or a group or groups (NVC2) of paramagnetic reference centers (NV2).

Figure 99

shows a method for generating a directional dependence of the photocurrent or the intensity (In) of the fluorescent radiation on the direction of the magnetic flux density B. Description of the figures

The figures show selected examples in a schematic and simplified manner. They are used for clarification. The features of the description and the figures can be combined with one another as far as this makes sense. The load results from the respectively valid one

Claim set. Figu r 1

FIG. 1 shows, in a schematically simplified manner, an evaluation circuit according to the prior art (SdT). A pump radiation source (PLI) irradiates the diamond sensor element with the NV center as the paramagnetic center (NV1) with pump radiation (LB). This pump radiation (LB) causes the paramagnetic center (NV1) to emit fluorescent radiation (FL). The intensity (l _pmp ) of the pump radiation (LB) from the pump radiation source (PLI) is modulated. These

Modulation of the intensity (I _pmp ) of the pump radiation (LB) of the pump radiation source (PLI) depends on a transmission signal (S5). The intensity (l _pmp ) of the pump radiation (LB) is preferably the

Pump radiation source (PLI) in a certain working range essentially proportional to Value (s5) of the transmission signal (S5). The transmission signal (S5) preferably has a direct component (S5g) and an alternating component (S5w) (S5 = S5g + S5w). A signal generator (G) generates the alternating component (S5w) of the transmission signal (S5). A first matching circuit (OF1) optionally adds a direct component (S5g) of the transmission signal (S5) to the alternating component (S5w) of the transmission signal (S5) and thus forms it

Transmission signal (S5). If necessary, the first matching circuit (OF1) amplifies the sum of the direct component (S5g) and the alternating component (S5w) for the transmission signal (S5). The first matching circuit (OF1) therefore preferably performs a linear mapping of the alternating component (S5W) of the transmission signal (S5) onto the transmission signal (S5).

In reality, the modulation of the intensity (I _pmp ) of the pump radiation (LB) is the

Pump radiation source (PLI) with respect to the modulation of the transmission signal (S5) is distorted in particular due to delay times, parasitic electrical components, etc.

The fluorescence radiation (FL) radiates into a radiation receiver (PD). The

Radiation receiver (PD) converts the intensity (l _fl ) of the fluorescent radiation (FL) into

Receiver output signal (SO). The instantaneous value (sO) of the receiver output signal (SO) depends on the intensity (l _{f |} ) of the fluorescence radiation (FL). The value (sO) des is preferred

Receiver output signal (SO) in a certain working range essentially proportional to the intensity (l _fl ) of the fluorescence radiation (FL). A first amplifier (VI) amplifies this

Receiver output signal (SO) to the reduced receiver output signal (Sl). The first amplifier (VI) preferably has a frequency response such that it preferably essentially only lets through and amplifies the alternating component (S5w) of the transmission signal (S5), which has a frequency other than 0Hz, and signal components with possibly occurring permitted mixed signal frequencies that when the frequencies of the transmission signal (S5) are mixed with expected frequencies of the modulation of a physical quantity that modulates the intensity (l _{f |} ) of the fluorescent radiation (FL). The first amplifier (VI) can also be regarded as part of the radiation receiver (PD), which is why it is usually not shown separately in the following figures.

A first multiplier (Ml) mixes the reduced receiver output signal (Sl) with the

Alternating component (S5w) of the transmission signal (S5) for the filter input signal (S3). A loop filter (TP) preferably only allows the direct component of the filter input signal (S3) and a useful frequency range around 0 Hz to pass. The loop filter (TP) preferably does not essentially allow the frequency of the alternating component (S5w) of the transmission signal (S5) to pass. Typically the loop filter (TP) comprises an amplifier. The filter output signal (S4) of the loop filter (TP) is used as the sensor output signal (out) used. Since the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic center (NV1) depends on the value of the physical parameter, for example the magnetic flux density B and / or the temperature and / or the pressure, at the location of the paramagnetic center (NV1) depends, the value of the amplitude of the modulation of the intensity (l _fl ) also depends

Fluorescence radiation (FL) with the modulation of the alternating component (S5w) of the transmission signal (S5) from the value of this physical parameter. The value of the amplitude of the modulation of the value of the receiver output signal (SO) with the modulation of the alternating component (S5W) of the transmission signal (S5) then also depends on the value of this physical parameter. As a result, the value of the direct signal component of the filter input signal (S3) depends on the value of this physical parameter. Thus, the value of the filter output signal (S4) and thus the value of the sensor output signal (out) also depend on the value of this physical parameter, which means that the system can be used as a sensor system, since the value of the sensor output signal (out) is used as a measured value for the value of this physical parameters can be used when other influencing parameters are kept constant or only modulated in a predetermined manner.

Fig. 2

FIG. 2 from the prior art largely corresponds to FIG. 1 with the difference that the sensor system does not include a first matching circuit (OF1) and the signal generator (G) generates the transmission signal (S5) directly. This construction is functional if the

The construction-related interpretation of the level of the transmission signal (S5) by the multiplier (Ml) takes place in such a way that only the alternating signal component (S5w) of the transmission signal (S5) is taken into account. In the following, the adaptation circuit (OF1) is therefore omitted at various points for better clarity.

Fig. 3

FIG. 3 shows the sensor system of FIG. 1 with the difference that a sensor element is now used that has a high density of paramagnetic centers (NV1) at least locally in part of the sensor element. This part is preferably a substrate (D) with an at least local density of more than 10 ppm, better than 20 ppm of paramagnetic centers (NV1) based on the number of atoms in the spatial volume under consideration. The substrate (D) preferably comprises one or more groups (NVC) of paramagnetic centers (NV1), where preferably within the respective group (NVC) the density of paramagnetic centers (NV1) is exceeded by more than 10 ppm, better than 20 ppm. The entire substrate (D) can also have a density of paramagnetic centers (NV1) of more than 10 ppm, better than 20 ppm

paramagnetic centers (NV1). In the case of NV centers in diamond as the substrate (D), it is preferably an HD-NV diamond (HD-NV).

Fig. 4

FIG. 4 shows the sensor system of FIG. 2 with the difference that a sensor element is now used that has a high density of paramagnetic centers (NV1) at least locally in part of the sensor element. This part is preferably a substrate (D) with an at least local density of more than 10 ppm, better than 20 ppm of paramagnetic centers (NV1) based on the number of atoms in the spatial volume under consideration. The substrate (D) preferably comprises one or more groups (NVC) of paramagnetic centers (NV1), the density of paramagnetic centers (NV1) preferably being exceeded by more than 10 ppm, better than 20 ppm, within the respective group (NVC). The entire substrate (D) can also have a density of paramagnetic centers (NV1) of more than 10 ppm, better than 20 ppm

paramagnetic centers (NV1). In the case of NV centers in diamond as the substrate (D), it is preferably an FID-NV diamond (HD-NV).

Fig. 5

FIG. 5 shows a basic sensor system claimed here, which is then further refined in the following figures. The pump radiation source (PLI) emits pump radiation (LB) with a pump radiation _wavelength (l _rGhr ) as a function of a transmission signal (S5) which is composed of a direct component (S5g) and an alternating component (S5w). A signal generator (G) generates the alternating component (S5w) of the transmission signal (S5). A first matching circuit (OF1) optionally adds a direct component (S5g) of the transmission signal (S5) to the alternating component (S5w) of the transmission signal (S5) and thus forms the actual transmission signal (S5). If necessary, the first matching circuit (OF1) amplifies the sum of the direct component (S5g) and the alternating component (S5w) for the transmission signal (S5).

Pump radiation (LB) from the pump radiation source (PLI) strikes the paramagnetic center (NV1) within the sensor element. The paramagnetic center (NV1) is caused to emit fluorescent radiation (FL) as a function of the intensity (l _fl ) of the pump radiation (LB) and the magnitude of the magnetic field B at the location of the paramagnetic center (NV1). It points the fluorescence radiation (FL) typically has a fluorescence radiation wavelength (lh) - for example 637nm at NV centers - which typically _depends on the pump radiation _wavelength (l _rGhr ) of the

Pump radiation (LB) deviates. The paramagnetic center (NV1) is preferably an NV center in diamond. A sensor element can be such a diamond. However, there can also be several diamonds and / or diamond powder and / or nanodiamonds.

The sensor element preferably comprises several paramagnetic centers (NV1). The paramagnetic centers (NV1) are preferably present in a particularly high density, for example in one or more FID-NV diamonds.

A first filter (F1) is preferred for radiation with the fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) - e.g. 637nm for NV centers - transparent to the extent that its absorption effect is based on the fluorescence radiation (FL) with regard to the technical effect to be achieved can be neglected.

A first filter (F1) is preferably not transparent for radiation with the pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB) to the extent that its transmission effect in relation to the pump radiation (LB) can be neglected with regard to the technical effect to be achieved.

Thus, essentially only the fluorescence radiation (FL) reaches the

paramagnetic centers (NV1) the radiation receiver (PD1). The radiation receiver (PD1) converts the amplitude modulation of the intensity (l _{f |} ) of the fluorescence radiation (FL) into

Receiver output signal (SO) around, corresponding to the modulation of the intensity (l _fl ) of the

Fluorescence radiation (FL) is modulated. A first multiplier (M l) preferably mixes the receiver output signal (SO) with the changeable component (S5w) of the transmission signal (S5) or with one of the transmission signal (S5) or the alternating component (S5w) of the transmission signal (S5), for example by multiplying by delay, derived signal to filter input signal (S3). A filter, which is preferably a loop filter (TP) and / or integrator, now only filters the filter input signal (S3) indirectly to form a filter output signal (S4). The loop filter (TP) filters the filter input signal (S3) to the hold circuit input signal (S10). In contrast to FIG. 1, a hold circuit (S&H) is now provided, the input of which is the hold circuit input signal (S10) and the output of which is the filter output signal (S4) and which is controlled by the trigger signal (STR). The signal generator (G) generates the alternating component (S5w) of the transmission signal (S5). The transmission signal (S5) can be, for example, a PWM signal with a 50% duty cycle. The pulse duty factor is preferably smaller. When lasers or LEDs are used as pump radiation sources, the transmission signal (S5) typically has a direct signal component (S5g), but this can also be zero. The transmission signal (S5) has a transmission signal period (T _p ). The signal generator (G) generates a trigger signal (STR), preferably at the end of the transmission signal period (T _p ), preferably before the occurrence of an edge of the transmission signal (S5). The trigger signal (STR) preferably has a first signal state and a second signal state. The trigger signal (STR) is in the first signal state, the inactive signal state of the trigger signal (STR), during a transmission signal period (T _p ). Only at the end of the transmission signal period (T _p ) of the transmission signal (S5) does the

Signal generator (G) briefly changes the trigger signal (STR) to the second signal state, the active signal state of the trigger signal (STR).

The hold circuit (S&H) (English Sample & Hold) stores the value of the hold circuit input signal (S10) that was last in the second, active signal state of the trigger signal (STR) during the phase of the trigger signal (STR) in the first, inactive signal state the duration of the following first, inactive signal state of the trigger signal (STR).

Only with the transition of the trigger signal (STR) from the first, inactive signal state to the second, active signal state of the trigger signal (STR), does the hold circuit (S&H) become transparent again and the filter output signal (S4) and thus the sensor output signal (out ) then typically follows the holding circuit input signal (S10) in this phase of a trigger signal (STR) in the second, active signal state. With the transition of the trigger signal (STR) from the second, active signal state to the first, inactive signal state, the hold circuit (S&H) freezes the level of the filter output signal (S4) and thus of the sensor output signal (out) until a transition from the first, inactive signal state enters the second, active signal state of the trigger signal (STR). This massively suppresses the chopper frequency, i.e. the frequency of the alternating component (S5w) of the transmission signal (S5). This suppression can be up to 60dB. Without this holding circuit (S&H), a 10th order filter would be necessary as a loop filter (TP) and / or integrator to achieve the same effect. The usage of

Holding circuits (S&H) in connection with the measurement of parametric centers (NV1) is not known from the prior art. The suppression is stronger the shorter the duration of the phase of the second signal state of the trigger signal (STR) relative to the transmission signal period (T _p ). The phase of the second signal state of the trigger signal (STR) is preferably at End or almost at the end of a transmission signal period (T _p ). This temporal placement of the phase of the second signal state of the trigger signal (STR) at the end or almost at the end of a

The transmission signal period (T _p ) has the advantage that an unavoidable low-pass characteristic of the pump radiation source (PLI), the paramagnetic center (NV1) and the radiation receiver (PD) and possibly other elements in the signal path have a smaller effect at the end of a transmission signal period. If the loop filter (TP) is an integrator, the holding circuit ensures that the indefinite integral that the integrator forms from the filter input signal (S3) becomes a specific integral, with the phase of the second being placed in time

Signal state of the trigger signal (STR) at the end or almost at the end of a transmission signal period (T _p ) the integration then runs roughly from 0 to 2p over a transmission signal period (T _p ). For example, it can easily be calculated that the integral of sin (o) cos (K>) only disappears if integration is only ever carried out over a whole period. The error that otherwise occurs leads to a massively reduced signal-to-noise ratio and a loss of up to 60dB accuracy.

Fig. 6

FIG. 6 shows when the receiver output signal (SO) of the radiation receiver (PD1) is evaluated in relation to the activity of the pump radiation source (PL). Here, a level of 0.5 of the exemplary measurement signal (MES) should mean that the receiver output signal (SO) of the radiation receiver (PD1) is positive, and a level of -0.5 of the exemplary measurement signal (MES) means that the receiver output signal (SO) of the radiation receiver (PD1) is negative. The measurement signal (MES) shown in FIG. 5a serves only for explanation. In the

Implementation of the proposal may differ from the technical implementation without deviating in terms of content with regard to the technical effect.

In the example in FIG. 5, the pump radiation source (PL) is active at the first times (TI) when the transmission signal (S5) is active (= 1), and then emits pump radiation (LB). A value of 1 should mean here that pump radiation (LB) is emitted by the pump radiation source (PLI). A value of 0 means that no pump radiation (LB) is emitted by the pump radiation source (PLI). This is illustrated by an exemplary logic value of 1 in FIG. 6 for the intensity (1 _pmp ) of the pump radiation (LB). In the example in FIG. 5, the pump radiation source (PL) is not active at second times (T2) and does not emit any pump radiation (LB). This is illustrated by an exemplary logic value of 0 in FIG. 6 for the intensity (1 _pmp ) of the pump radiation (LB).

The pump radiation (LB) at least partially irradiates the paramagnetic center (NV1) of the sensor element. Therefore the paramagnetic center (NV1) emits fluorescent radiation (FL). This happens with a time delay of the fluorescence phase shift time (ATFL). With an NV center in diamond as the paramagnetic center (NV1) in a sensor element, this delay is in the form of the fluorescence phase shift time (ATFL). on the order of ins. Therefore, the signal of the intensity (l _fl ) of the fluorescence radiation (FL, FL1) is temporally relative to the signal of the pump radiation (LB) by a fluorescence phase shift time (ATFL)

out of phase. The fluorescence phase shift time (ATFL) depends as well as that

Fluorescence radiation (FL) itself typically depends on the magnetic flux density B and possibly

further physical parameters such as pressure P, temperature q, acceleration a,

Gravitational field strength g, electric field strength E, exposure to ionizing radiation, etc. The sensor systems presented here therefore determine measured values as values of their sensor output signals (out) that correspond to the values of these physical parameters if the dependencies on other parameters are reduced, e.g. by shielding.

The paramagnetic center (NV1) in the example of FIG. 6 is thus around in time

Fluorescence phase shift time (ATFL) shifted to the first times (TI) active and only then emits the fluorescence radiation (FL), the pump radiation source (PLI) being active at the first times. This is exemplified by an exemplary, arbitrary logical value of 1 in FIG. 6 for the intensity (l _{f |} ) of the fluorescence radiation (FL).

The paramagnetic center (NV1) in the example of FIG. 6 is thus around in time

Fluorescence phase shift time (ATFL) shifted to the second times (T2) not active and then does not emit any fluorescence radiation (FL). This is exemplified by an exemplary, arbitrary logic value of 0 in FIG. 6 for the intensity (l _{f |} ) of the fluorescence radiation (FL).

In the example of FIGS. 4 to 6, the receiver output signal (SO) of the radiation receiver (PD) is evaluated at the first times (TI). The measurement signal (M ES) used for clarification has the arbitrary value 0.5 at these first times (TI). Therefore, with measuring systems with 6, a separation of the signal of the pump radiation (LB) from the signal of the fluorescence radiation (FL) can only be achieved by a first filter (F1) or by a filter effect of the sensor element with the paramagnetic centers (NV1).

In Figure 6 an exemplary trigger signal (STR) is shown, which is always at the end of the transmission signal period (T _p ) from the first, inactive signal state, here for example marked with the level 0, briefly in the second, active signal state, here as an example the level 1 is marked.

The signals are simplified for the sake of clarity and are only shown schematically with exemplary levels.

Fig. 7

FIG. 7 shows an exemplary simple system for an exemplary partial function of an integrated circuit (IC) for operating the sensor systems presented. A signal generator (G) again generates the alternating component (S5w) of the transmission signal (S5). The first matching circuit (OF1) generates the transmission signal (S5) from the alternating component (S5w) of the transmission signal (S5), preferably by means of a linear mapping. The first matching circuit (OF1) optionally adds a direct component (S5g) of the transmission signal (S5) to the alternating component (S5W) of the transmission signal (S5) and thus forms the actual transmission signal (S5). If necessary, the first matching circuit (OF1) amplifies the sum of the direct component (S5g) and

Alternating component (S5w) to the transmission signal (S5).

The pump radiation source (PLI) converts the transmission signal (S5) into a modulated pump radiation (LB) which hits the sensor element with the paramagnetic center (NV) directly or, as described above, indirectly.

There, this reflected pump radiation (LB) excites the paramagnetic centers (NV1) in the material of the sensor element to emit fluorescence radiation (FL). The first filter (Fl) lets radiation with the fluorescence radiation wavelength (l ^) of the fluorescence radiation (FL) - e.g. 637nm at NV centers - pass, while the modulated pump radiation (LB) due to its

_Pump radiation _wavelength (l _rigir ) does not let pass. The fluorescence radiation (FL) is modulated due to the path of action correlated to the pump radiation (LB). The modulated

Fluorescence radiation (FL) is emitted by the radiation receiver after passing through the first filter (Fl) (PD) and converted into a modulated receiver output signal (SO). The radiation receiver (PD) may include further amplifiers and filters. A first adder (A1) subtracts a feedback signal (S6) from the receiver output signal (SO). The result is the reduced one

Receiver output signal (Sl). This reduced receiver output signal (S1) is processed further in a synchronous demodulator. For this purpose, a first multiplier (Ml) multiplies the reduced receiver output signal (Sl) by the alternating component (S5w) of the transmission signal (S5) and thus forms the filter input signal (S3). The DC component of the filter input signal (S3) is let through in a loop filter (TP) following in the signal path. In this way that forms

Loop filter (TP) the filter output signal (S4) as the output signal of the loop filter (TP). Formally, the first multiplier (M l) and the loop filter (TP) form a scalar product as a signal from the reduced receiver output signal (S1) and the transmission signal (S5). The value of the

The filter output signal (S4) then indicates how much of the transmission signal (S5) is proportionately in the reduced

Receiver output signal (Sl) is present. The function of this filter output signal (S4) can be compared with a Fourier coefficient. A second multiplier (M2) multiplies the filter output signal (S4) with the transmission signal (S5) and thus forms the feedback signal (S6). If the gain v of the loop filter (TP) is very high, the reduced receiver output signal (S1) typically no longer contains a proportion of the alternating component (S5w) of the transmission signal (S5) apart from a control error and possibly a constant component with stability. The value of the filter output signal (S4) is then a measure of the intensity (l _{f |} ) of the fluorescent radiation (FL) that reaches the radiation receiver (PD). This receiver output signal (S4) is then preferably output as a sensor output signal (out) via one of the lead frame surfaces of the housing by means of a bond wire.

Fig. 8

FIG. 8 corresponds to FIG. 7. In FIG. 8, FIG. 7 is supplemented by the hold circuit (S&H) and the trigger signal (STR). FIG. 8 also corresponds to FIG. 5. FIG. 5 is supplemented by the second multiplier (M2). The second multiplier (M2) mixes the sensor output signal (out) with the alternating component (S5w) of the transmission signal (S5) to form the feedback signal (S6). The feedback signal is preferably formed complementary to the transmission signal (S5). This can be done in the loop filter (TP) by adding the multiplication with a suitable sign and with a large gain v and a suitable offset, which is not shown for the sake of simplicity, but is only symbolized by the circle at the output of the loop filter (TP). The The feedback signal (S6) is subtracted from the receiver output signal (SO) in the first adder (A1). The first adder (A1) forms the reduced receiver output signal (S1) in such a way that it is now used as the input signal for the first multiplier (M l) instead of the receiver output signal (SO) in FIGS. 4 and 5. Due to the complementary design of the feedback by means of the feedback signal (S6), in the steady state of the control there is preferably essentially a constant signal as a reduced receiver output signal (S1). The disturbances caused by the said low-pass properties of the pump radiation source (PLI), the radiation receiver (PD) and the paramagnetic center can initially be neglected in this consideration.

The signal generator (G) then preferably sets the trigger signal (STR) to a second, active signal state so that the condition F [S5w] = 0 is met. If the change portion (S5w) of the

Transmission signal (S5), for example, a PWM signal with a 50% duty cycle and with a PWM period of one transmission signal period (T _p ) of the alternating component (S5w) of the transmission signal (S5), the signal generator (G) sets the trigger signal ( STR) preferably shortly before the end of the transmission signal period (T _p ), preferably for a duration of, for example, 2% of the time duration of the transmission signal period (T _p ) in the second, active signal state and otherwise in the first, inactive signal state.

The folded circuit (S&FI) (English Sample & Flold) stores the value of the folded circuit input signal (S10) that was last in the second, active signal state of the trigger signal (STR) during the phase of the trigger signal (STR) in the first, inactive signal state the duration of the following first, inactive signal state of the trigger signal (STR).

Only with the transition of the trigger signal (STR) from the first, inactive signal state to the second, active signal state of the trigger signal (STR), does the folded circuit (S&FI) become transparent again and the filter output signal (S4) and thus the sensor output signal (out ) then typically follows the holding circuit input signal (S10) in this phase of a trigger signal (STR) in the second, active signal state. With the transition of the trigger signal (STR) from the second, active signal state to the first, inactive signal state, the hold circuit (S&H) freezes the level of the filter output signal (S4) and thus of the sensor output signal (out) until a transition from the first, inactive signal state enters the second, active signal state of the trigger signal (STR). Fig. 9

Figure 9 shows the system of Figure 8 with the difference that the recovery of the

The feedback signal (S6) is now not carried out electrically via a first adder (A1), but via a reference noise source in order to implement a thickness amplifier. A compensation radiation source (PLK) acts here as the reference noise source, which emits a compensation radiation (KS) with a compensation radiation wavelength (l ^). The compensation radiation (KS) irradiates the radiation receiver (PD), typically summing up with the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) of the sensor element.

For the feedback, the level and the offset of the feedback signal (S6) are suitably adapted by a second matching circuit (OF2), typically by a linear mapping (s7 = a1 * s6 + s7 ₀ ). Here, s7 is the current value of the generated compensation transmission signal (S7), al is a real constant and s7 _{0 is} a real, fixed and / or adjustable offset value. The result is the compensation transmission signal (S7) as the output signal of the second matching circuit (OF2). It is proposed here to operate the compensation radiation source (PLK) as a reference noise source of the thickness amplifier with this compensation transmission signal (S7). The

Compensation radiation source (PLK) then radiates its compensation radiation (KS) via a third, preferably known transmission path (13) into the radiation receiver (PD), preferably superimposing and adding to the fluorescence radiation (FL) of the paramagnetic centers (NV1). In order to reproduce the subtraction of the feedback signal (S6) of FIG. 8, it is now provided that the component corresponding to the alternating component (S5w) of the transmission signal (S5)

AC component (S7w) of the compensation transmission signal (S7) is multiplied by a negative factor. This can be achieved, for example, by designing the output of the loop filter (TP) to be inverting and amplifying. It is therefore expressly not a matter of where this inversion is carried out in the control loop, but only that it takes place at all in order to achieve stability in the control loop. In this context, this development of the complementary character can also take place by modifying the signal mixed with the filter output signal (S4) in the second multiplexer (M2). If we assume, for example, that the value (s5w) of the alternating component (S5w) of the transmission signal (S5) fluctuates between 0.5 and -0.5, for example an alternating component (S5c ) the transmission signal (S5) by multiplying by -1 by a third matching circuit (OF3) be generated. It then preferably applies to the value (s5w) of the alternating component (S5w) des

Transmission signal (S5) and for the value (s5c) of the complementary transmission signal (S5c) essentially the equation s5w + s5c = 0, where "essentially" means here that the sum increases by an amount of up to 10%, better a lot less, the amount of the amplitude of the alternating component (S5w) of the transmission signal (S5) can deviate from the value 0. In the elaboration, values of the deviation of less than IO ^{4 were} used.

In addition, it should be ensured that the compensation radiation source (PLK) does not feed any radiation into the radiation and signal path of the pump radiation source (PLI).

For this purpose, the device is preferably provided with a first barrier (BAI) which prevents the compensation radiation source (PLK) from irradiating the paramagnetic centers (NV1) in the material of the sensor element and thus stimulating them to emit fluorescent radiation (FL). It is therefore a first barrier (BAI) for electromagnetic radiation and / or light. This is of particular importance if the compensation radiation source (PLK) is designed to be identical to the pump radiation source (PLI) in order to be able to be a perfect reference noise source.

The device is preferably provided with a second barrier (BA2) which prevents the pump radiation source (PLI) from being able to irradiate the radiation receiver (PD) directly with pump radiation (LB). This is also a second barrier (BA2) for electromagnetic radiation and / or light. For control reasons, a certain amount of direct irradiation may be required to a very limited extent, in order to improve the control's capture range.

In this respect, it is conceivable to allow such a basic optical coupling, e.g. by means of aperture openings and / or damping filters. The basic coupling can, however, also be achieved electronically. In this regard, we refer to US Pat. No. 8,766,154 B2, the technical teaching of which, in combination with the technical teaching presented here, is a full part of this disclosure, insofar as this is permissible in the legal system of the relevant state in which the nationalization takes place when this application is later nationalized .

Fig. 10

In a manner analogous to the difference between FIG. 7 and FIG. 8, FIG. 10 shows the system of FIG. 9 supplemented by the hold circuit (S&H) and the trigger signal (STR). At this point, reference is made to the statements on the hold circuit (S&H) in the text of FIG. 6, which also apply here. Fig. 11

FIG. 11 shows an exemplary signal scheme corresponding to FIGS. 9 and 10 with exemplary levels for clarification that are selected completely arbitrarily. In reality, other levels are likely to occur that depend on the selected gains, offsets, etc. The signal forms are also purely exemplary. The signals are simplified for clarity and only shown schematically.

Fig. 12

FIG. 12 essentially corresponds to FIG. 9. In contrast to FIG. 9, however, the intensity (1 ^) of the compensation radiation (KS) of the compensation radiation source (PLK) and the intensity (1 ^) of the pump radiation (LB) of the pump radiation source are not regulated (PLK) kept constant, but the intensity (l _pmp ) of the pump radiation (LB) of the pump radiation source (PLI) and the intensity (l _ks ) of the compensation radiation (KS) of the

Compensation radiation source (PLK) kept constant.

FIG. 12 serves to illustrate the method in the case of optical compensation via a regulated compensation radiation source (PLK). The sensor system again comprises a paramagnetic center (NV1) or several paramagnetic centers (NV1) or one or more groups (NVC) of paramagnetic centers (NV1) in the material of a sensor element that is part of the

Sensor system is. The sensor system then works, for example, in such a way that the signal generator (G) generates an alternating component (S7w) of the compensation transmission signal (S7). The alternating component (S7w) of the compensation transmission signal (S7) preferably has a compensation transmission period which is typically equal to the transmission signal period (T _p ). A second matching circuit (OF2) provides the alternating component (S7w) of the compensation transmission signal (S7) with a direct component (S7g) of the

Compensation transmission signal (S7) so that the following applies to the associated instantaneous values: s7 = s7w + s7g.

A fourth matching circuit (OF4) preferably generates from the alternating component (S7w) of the

Compensation transmission signal (S7) the complementary alternating component (S7c) of the

Compensation transmission signal (S7), so that the following typically and preferably applies to the corresponding instantaneous values: s7w + s7c = 0.

By means of this compensation transmission signal (S7) there is a modulated transmission of a modulated compensation radiation (KS) by the compensation radiation source (PLK) operated in a modulated manner. A modulated fluorescence radiation (FL) is caused by a paramagnetic center (NV1) in a material of a sensor element by a modulated pump radiation (LB). The origin of the modulated pump radiation (LB) is described later in this section. In the radiation receiver (PD), the modulated fluorescence radiation (FL) and the modulated compensation radiation (KS) are preferably received in a linearly summing manner and a receiver output signal (SO) is generated that depends on the received total intensity of the intensity (l _fl ) of the fluorescence radiation (FL) and the intensity (l _ks ) of the compensation radiation (KS) is preferably linearly dependent at least around the operating point. If the control described in the following has settled in the absence of interferers, the receiver output signal (SO) preferably no longer contains any modulation in the form of signal components of the receiver output signal (SO) that match the alternating component (S7w) of the

Correlate compensation transmission signal (S7). A correlation of the

Receiver output signal (SO) with the modulated compensation transmission signal (S7), in particular with the aid of a synchronous demodulator, and the formation of an output signal (out) is carried out in order to detect the component in the receiver output signal (SO) that is modulated according to the alternating component (S7w) of the compensation transmission signal (S7) and then using the

To compensate for the transmission signal (S5) and consequently by means of the intensity (I _pmp ) of the pump radiation (LB) and, consequently, the intensity (I _fl ) of the fluorescent radiation (FL). The proposed alternative method comprises generating a transmission signal (S5) modulated with the compensation transmission signal (S7) using the filter output signal (S4) and thus using the

Sensor output signal (out). The sensor output signal (out) depends on the intensity of the correlation between the modulation of the fluorescence radiation (FL) and the compensation transmission signal (S7).

The correlation is preferably carried out with the steps

• Multiplication of the receiver output signal (SO) with the alternating component (S7w) of the

Compensation transmission signal (S7) for the filter input signal (S3);

• Filtering the filter input signal (S3) with a loop filter (TP) to the filter output signal (S4);

• Multiplication of the filter output signal (S4) with the complementary alternating component (S7c) of the compensation transmission signal (S7) to form the feedback signal (S8);

• Forming the transmission signal (S5) from the feedback signal (S8); • Controlling a pump radiation source (PLI) with the transmission signal (S5);

• Sending a pump radiation (LB) by the pump radiation source (PLI) as a function of the transmission signal (S5);

• Use of the filter output signal (S4) to generate the output signal (out), whereby the output signal (out) for the purposes of this feature can be the same as the filter output signal (S4).

Should no complementary change component (S7c) of the

Compensation transmission signal (S7), but the alternating component (S7w) of the compensation transmission signal (S7) are used, i.e. the fourth matching circuit (OF4) is omitted, the loop filter (TP) should form the filter output signal (S4) so that it has a factor of -1 is multiplied.

The first matching circuit (OF1) forms the transmission signal (S5) from the feedback signal (S8) by means of a preferably linear mapping analogous to the function of the second matching circuit (OF2) in FIGS. 9 and 10.

The principle of regulation in FIG. 12 using the pump radiation source (PLI) instead of regulation using the compensation radiation source (PLK) can also be applied to the other sensor systems in this document, in which regulation takes place using the compensation radiation source (PLK). These are therefore expressly included in the claim and disclosure.

The control principles of FIGS. 9 and 12 can also be combined with one another. In the case of a very high intensity (I _fl ) and a high contrast (KT) of the fluorescence radiation (FL), the control loop is _preferably regulated by regulating the intensity (I _pmp ) of the pump radiation (LB). Conversely, with a low intensity (l _fl ) or a low contrast (KT) of the fluorescence radiation (FL), the control circuit is regulated by regulating the intensity (l _s ) of the compensation radiation (KS) at maximum intensity (l _pmp ) of the pump radiation ( LB).

Fig. 13

FIG. 13 shows an exemplary signal scheme corresponding to FIG. 12 with exemplary levels for clarification, the levels being chosen completely arbitrarily. In reality, other levels are likely to occur which depend on the selected gains, offsets, etc. The signal forms are also purely exemplary. The signals are simplified for clarity and only shown schematically. Fig. 14

FIG. 14 corresponds to FIG. 12 with the difference that a hold circuit (S&H) is again inserted, which is controlled by the signal generator (G) by means of a trigger signal (STR).

Reference is made here to the statements relating to FIG. 8 and FIG. 10.

Fig. 15

FIG. 15 largely corresponds to FIG. 10. In contrast to FIG

Compensation section designed differently. In this variant is preferred

Compensation radiation source (PKL) designed like the pump radiation source (PLI) in order to realize a thickness amplifier. For example, the pump radiation source (PLI) can be a laser diode from Osram of the PLT5 520B type and the

Compensation radiation transmitter (PKL) also involve a laser diode from Osram of the type PLT5 520B. The compensation radiation source (PKL) and the

Pump radiation source (PLI) thermally coupled. For this purpose, the pump radiation source (PLI) and the compensation radiation source (PLK) are therefore preferably located on the same semiconductor substrate or on a common heat sink or a common, thermally highly conductive carrier. The pump radiation source (PLI) and the

Compensation radiation source (PLK) in the case of implementation on a common

Semiconductor substrate on a common reference potential connection. In this variant, the compensation radiation source (PLK) also preferably does not radiate the compensation radiation (KS) directly into the radiation receiver (PD) as in FIG. Instead, the compensation radiation (KS) serves as pump radiation for an additional reference sensor element with additional ones

paramagnetic reference centers (NV2). The paramagnetic reference centers (NV2) are preferably NV centers in diamond. The reference sensor element preferably comprises one or more diamonds with one or more reference NV centers, that is to say NV centers, as paramagnetic reference centers (NV2).

In order to be able to detect a magnetic flux B, it makes sense if the paramagnetic reference centers (NV2) of the reference sensor element are covered by a shield (AS) or

functionally equivalent measures or device parts are shielded from the magnetic flux density B. Ultimately, however, this shielding is not required if the

paramagnetic reference centers (NV2) of the reference sensor element of another magnetic Flux density B are exposed as the paramagnetic centers (NV1) of the sensor element. In any case, the difference in the magnitudes of the magnetic flux density B at the location of the

paramagnetic centers (NV1) and at the location of the paramagnetic reference center (s) (NV2) recorded and output as a sensor output signal (out).

The paramagnetic reference centers (NV2) convert in the example of FIG

Compensation radiation (KS) of the compensation radiation source (PLK), the one

Compensation radiation wavelength (l ^) into a compensation fluorescence radiation (KFL), the intensity (l _{kf |} ) of which depends on the intensity of the irradiation of the paramagnetic reference centers (NV2) with compensation radiation (KS). The nature of the paramagnetic reference centers (NV2) is preferably the same as the nature of the paramagnetic centers (NV1) in order to approximate an ideal reference noise source in the sense of the thickness principle. Thus, a particularly preferred embodiment is that the paramagnetic centers (NV1) are NV centers in diamond and that the paramagnetic reference centers (NV2) are preferably also NV centers in diamond.

At least one local density of the paramagnetic centers (NV1) is preferred

Emit fluorescence radiation (FL) with a fluorescence radiation wavelength (lh), at least approximately equal to the density of a local density of the paramagnetic reference centers (NV2), which emit compensating fluorescence radiation (KFL) with a compensation fluorescence wavelength (l ^).

The paramagnetic centers (NV1) are preferably NV centers in one or more HD-NV diamonds with a high NV center density.

The paramagnetic reference centers (NV2) are preferably NV centers in one or more HD-NV diamonds with a high NV center density. The paramagnetic reference centers (NV2) can be paramagnetic in one or more groups (NVC2)

Reference centers (NVC2) be arranged. The area of a group (NVC2) of paramagnetic reference centers (NV2) in the reference element preferably has a very high density

Reference centers (NV2). In the case of NV centers as reference centers (NV2) in diamond, the area of the group of reference centers (NV2) is preferably HD-NV diamond within the meaning of this document.

The area of a group (NVC2) of paramagnetic reference centers (NV2) preferably has a density of reference centers, for example NV centers, of more than 0.01 ppm and / or more than 10-3ppm and / or more than 10-4ppm and / or more than 10-5ppm and / or more than 10-6ppm based on the number of atoms of the substrate (D) in the volume under consideration within the substrate (D) , i.e. in the case of NV centers in diamond of carbon atoms per unit volume. A density of more than 0.01 ppm and / or even better 0.1 ppm is clearly preferred for use in the reference element.

Reference is here expressly made to FIG. 71 and the associated description, the descriptions there relating to paramagnetic centers (NV1) and groups (NVC) of paramagnetic centers (NV1) on paramagnetic reference centers (NV2) and groups (NVC2) of paramagnetic reference centers (NV2) being transferred as a result can that in Figure 71 the

paramagnetic centers (NV1) through paramagnetic reference centers (NV2) and the groups (NVC) paramagnetic centers (NV1) through groups (NVC2) paramagnetic reference centers (NV2) and the pump radiation (LB) through the compensation radiation (KS) and the

Fluorescence radiation (FL) through the compensation fluorescence radiation (KFL) and the

_Pump radiation _wavelength (l _rigir ) can be replaced by the compensation radiation _wavelength (l _{| <5} ). These groups (NVC2) of paramagnetic reference centers (NV2) then also have an extension (d) of the group (NVC2) of paramagnetic reference centers (NV2), to which the statements made there also apply and which preferably also have a distance of l _{| <} 5/2 the

Compensation radiation wavelength (l _{| <5} ) in the direction of the pointing vector of

Have compensation radiation (KS).

This extension (d) of a group (NVC2) of paramagnetic is therefore preferred

Reference centers (NV2) perpendicular to the pointing vector of the incident compensation radiation (KS) within a sensor element smaller than h * l _{| <} 5/2 of the compensation radiation wavelength (l ^) with n as a whole positive number. Preferably, d ^ _ks / 2 and / or better d ^^ / 4 and / or better d ^^ / 10 and / or better d ^ _ks / 20 and / or better d ^ _ks / 40 and / or better d ^ _ks / 100.

In an analogous manner, the area of a group (NVC) of paramagnetic centers (NV1) in the sensor element preferably likewise has a region that is as close as possible to the density of paramagnetic centers

Reference centers (NV2) in the reference element the same density of paramagnetic centers, for example NV centers, in the sensor element of more than 0.01 ppm and / or of more than 10-3 ppm and / or of more than 10-4 ppm and / or of more than 10 -5ppm and / or more than 10-6ppm based on the number of atoms of the substrate (D) in the volume under consideration within the Substrate (D), so in the case of NV centers in diamond of carbon atoms per unit volume on. A density of more than 0.01 ppm and / or even better 0.1 ppm is clearly preferred for use in the sensor element.

Reference is expressly made here to FIG. 71 and the associated description. These groups (NVC) of paramagnetic centers (NV1) then also have an extension (d) of the group (NVC) of paramagnetic centers (NV1) to which the statements made there apply and which preferably have a distance of l _{r [gir} / 2 of the pump radiation wavelength (l _rirr ) in the direction of the pointing vector of the pump radiation (LB). Therefore, this extension (d) of a group (NVC) of paramagnetic centers (NV1) perpendicular to the pointing vector of the incident pump radiation (LB) within a sensor element is less than h * l _rpir / 2 of the pump radiation _wavelength (l _rirr ) with n as whole positive number. Preferably d ^ _pmp / 2 and / or better d ^ _pmp / 4 and / or better d ^ _pmp / 10 and / or better d ^ _pmp / 20 and / or better d ^ _pmp / 40 and / or better d ^ _pmp / 100.

Diamond can be graphitized by amorphization by particle bombardment and the like. It is therefore conceivable that the paramagnetic centers (NV1) and the paramagnetic reference centers (NV2) are in the same diamond crystal and that the first barrier (BAI) or another optical barrier consists of graphite or amorphized diamond or otherwise blackened diamond within this diamond crystal .

The compensation radiation wavelength (l ^) is preferably equal to the pump radiation wavelength (l _r ,,, _r ) if the nature of the paramagnetic reference centers (NV2) is the same as the nature of the paramagnetic centers (NV1). In the case of NV centers, the

Compensation radiation wavelength (l _{| <5} ) preferably in a range between 500 nm and 6000 nm. Compensation radiation (KS) was successful with a

Compensation radiation wavelength (l _{| <5} ) of 520nm applied.

Preferably, the compensation fluorescence radiation wavelength (l ^) is the

Compensation fluorescence radiation (KFL) of the paramagnetic reference centers (NV2) equal to the fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) - e.g. 637nm for NV centers In the case of using NV centers as paramagnetic Centers (NV1) and as paramagnetic reference centers (NV2) are the

Compensation fluorescence radiation (KFL) and the fluorescence radiation (FL) red.

In the exemplary case in FIG. 15, what is written about the pump radiation (LB) in the section “Definition of the pump radiation” also applies to the compensation radiation (KS).

The first filter (F1) is preferably not transparent to radiation of the pump radiation wavelength (l _r , _hr ) of the pump radiation (LB) from the pump radiation source (PLI).

In the case of the device in FIG. 15, the first filter (F1) is preferably not transparent to radiation of the compensation radiation wavelength (I ^) of the compensation radiation (KS)

Compensation radiation source (PLK).

The first filter (Fl) is preferably transparent for radiation of the fluorescence radiation wavelength (lp) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) - e.g. 637 nm for NV centers -

In the case of the device of FIG. 15, the first filter (F1) is preferably transparent to radiation of the compensation fluorescence radiation wavelength (I ^) of the compensation fluorescence radiation (KFL) of the paramagnetic reference centers (NV2).

As a result, the intensity (l _{kf |} ) of the compensation fluorescence radiation (KFL) of the paramagnetic reference centers (NV2) and the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) in the radiation receiver (PD) are superimposed to form a total intensity.

The radiation receiver (PD) converts this total intensity back into

Receiver output signal (SO), the value of which depends on the value of the total intensity from the superposition of the intensity (l _{kf |} ) of the compensation fluorescence radiation (KFL) of the paramagnetic reference centers (NV2) with the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) in the radiation receiver (PD) depends.

For the rest, reference is made to the preceding and, if applicable, subsequent explanations of the other devices on the functional principle of the control and on possible others

Realizations of the scheme referenced. Fig. 16

The difference between FIG. 15 and FIG. 14 corresponds to the difference between FIG. 10 and FIG. 12. While in FIG. 15 the intensity (I _ks ) of the compensation radiation (KS) is regulated, in FIG. 16 the intensity (I _pmp ) of the pump radiation (LB ) regulated. Reference is therefore made here to the description of FIGS. 10, 12 and 15, since the same principles are used here.

Fig. 17

FIG. 17 corresponds to an expanded system of FIG. 7. FIGS. 9 and 12 can be expanded in an analogous manner. FIG. 17 also shows a simple system for an exemplary one

Sub-function of an integrated circuit (IC) for measuring the intensity (l _fl ) of the

Fluorescence radiation (FL) from paramagnetic centers (NV1) to use an influencing, physical parameter, such as the magnetic flux density B at the location of the

to determine paramagnetic centers (NV1). A signal generator (G) generates another

Alternating component (S5w) of the transmission signal (S5). A loop filter (TP) and an additional loop filter (TR ') are built into the system. The loop filter (TP) and the additional loop filter (TR ') preferably have the same filter characteristic with the same filter function F [X1] with respect to any signal XI. The loop filter (TP) and the additional loop filter (TP ¹ ) are linear filters. That means for the common filter function F [X1] for any real number a and any two signals XI and X2:

F [a * Xl] = a * F [Xl] F [X1 + X2] = F [X1] + F [X2]

We require the following exemplary conditions:

F [l] = l

F [S5w] «0

F [S5w * S5w] «l The generator (G) also generates the alternating component (S5w ') of an orthogonal

Reference signal (S5 '). For the alternating component (S5w ') of the orthogonal reference signal (S5'), the following should apply as an example: F [S5w '] «0

F [S5w '* S5w'] «l

In addition, we raise the exemplary requirement that the alternating component (S5w) of the transmission signal (S5) should be orthogonal to the alternating component (S5w ') of an orthogonal reference signal (S5') that the generator (G) also generates.

F [S5w * S5'w] «0

For the sake of simplicity, we assume as an example that the transmission signal (S5) and the orthogonal reference signal (S5) are periodic with the transmission signal period (T _p ). An additional first

Multiplier (Ml ') multiplies the reduced receiver output signal (Sl) with the additional alternating component (S5w') for the additional filter input signal (S3 '). The additional loop filter (TR ') filters the filter input signal (S3') to the additional filter output signal (S4 '). For the sake of simplicity, it is assumed here that the additional first multiplier (Ml) has the same properties as the first multiplier (Ml). Furthermore, it is assumed by way of example that the additional loop filter (TP) has the same properties as the loop filter (TP). A first matching circuit adds a direct component (S5g) of the transmission signal (S5) to the alternating component (S5w) of the transmission signal (S5) as described above and, if necessary, performs a further necessary amplification with suitable amplification and suitable offset, i.e. by means of an essentially linear mapping , by.

The pump radiation source (PLI) converts the transmission signal (S5) back into a modulated one

Pump radiation (LB) that hits the sensor element directly or, as described above, indirectly and thus the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the sensor element. There this pump radiation (LB) excites the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group (NVC) or the groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element to emit fluorescent radiation (FL) . The first filter (Fl) allows radiation with the fluorescence radiation wavelength (lp) of the fluorescence radiation (FL) - e.g. 637 nm at NV centers - to pass, while the radiation with the pump radiation wavelength (l _{r gir} ) of the pump radiation (LB) from the pump radiation source (PLI ) and thus essentially does not allow the modulated pump radiation (LB) to pass. The fluorescence radiation (FL) is correlated, but typically defined phase-shifted to the pump radiation (LB) modulated. This can now be exploited.

The modulated fluorescence radiation (FL) is received by the radiation receiver (PD) after passing through the first filter (F1) and converted into a modulated receiver output signal (SO). The radiation receiver (PD) may include further amplifiers and filters. A first adder (A1) subtracts a complex feedback signal (S8) from the receiver output signal (SO). The result is the reduced receiver output signal (S1). This reduced

Receiver output signal (S1) is now in two independent circuit parts

further processed.

First circuit part

A first multiplier (Ml) multiplies the reduced receiver output signal (Sl) by the alternating component (S5w) of the transmission signal (S5) and thus forms the filter input signal (S3). The

Loop filter (TP) preferably allows essentially the direct component of the filter input signal (S3) to pass through. The result is the filter output signal (S4) as the output signal of the loop filter (TP). Formally, the first multiplier (M l) and the low-pass filter of the loop filter (TP) form a scalar product of the reduced receiver output signal (S1) and the alternating component (S5w) of the transmission signal (S5). The value of the filter output signal (S4) then indicates how much of the alternating component (S5w) of the transmission signal (S5) is proportionally present in the reduced receiver output signal (S1). The function of this filter output signal (S4) can be compared with a Fourier coefficient. A third

In this example, the adapter circuit (OF3) generates a complementary alternating component (S5c) of the transmission signal (S5) from the alternating component (S5w) of the transmission signal (S5). On the alternatives

Versions that are mentioned above and below and have the same functional results are pointed out. Ultimately, the point is that the feedback signal (S6) should be modulated complementarily to the transmission signal (S5). A second multiplier (M2) multiplies that

Filter output signal (S4) with the complementary alternating component (S5c) of the transmission signal (S5) and thus forms the feedback signal (S6). If the gain v of the loop filter (TP) is very large and with the correct sign and the complementary alternating component (S5c) of the transmission signal (S5) and the further complementary alternating component (S5c ') of the orthogonal transmission signal (S5') are formed in the appropriate manner, this includes reduced receiver output signal (S1) typically no more significant components of the transmission signal (S5) apart from a control error with stability. If the alternating component (S5w) of the transmission signal (S5) has the amplitude (S5w _a ), for example, the complementary alternating component (S5c) of the transmission signal (S5) can be given by the equation s5c = s5w _a -s5w are formed. If the alternating component (S5w ') of the orthogonal transmission signal (S5 ¹ ) has the amplitude (S5w _a '), for example, the complementary alternating component (S5c ') of the orthogonal reference signal (S5') can be given by the equation s5c '= s5w _a ' - s5w '. The value of the filter output signal (S4) is then a measure of the intensity (l _fl ) of the

Fluorescence radiation (FL) reaching the radiation receiver (PD).

Second part of the circuit

An additional first multiplier (Ml ¹ ) multiplies the reduced receiver output signal (Sl) by the alternating component (S5w ') of the orthogonal reference signal (S5 ¹ ) and thus forms the additional filter input signal (S3 ¹ ). The additional loop filter (TP ¹ ) essentially lets through the DC component of the additional filter input signal (S3 ¹ ). The additional filter output signal (S4 ¹ ) results as the output signal of the additional loop filter (TP ¹ ). Formally, the additional first multiplier (Ml ¹ ) and the additional low-pass filter of the additional loop filter (TP ¹ ) form

Scalar product of the reduced receiver output signal (S1) and the alternating component (S5w ') of the orthogonal reference signal (S5 ¹ ). This is preferably done in the same way as in the first circuit part. The value of the additional filter output signal (S4 ¹ ) then indicates how much of the alternating component (S5w ') of the orthogonal reference signal (S5 ¹ ) proportionally in the reduced

Receiver output signal (Sl) is present. The function of this additional filter output signal (S4 ¹ ) can be compared with another Fourier coefficient. In this example, an additional, third matching circuit (OF3 ') generates an additional, complementary alternating component (S5c') of the orthogonal reference signal (S5 ') from the additional alternating component (S5w') of the orthogonal reference signal (S5 '). Reference is made to the alternative designs which are mentioned above and below and have the same functional results. Ultimately, the point is that the additional feedback signal (S6 ') should be modulated complementarily to the additional alternating component (S5w') of the orthogonal reference signal (S5 '). Another second

Multiplier (M2 ¹ ) multiplies the additional filter output signal (S4 ¹ ) with the additional complementary alternating component (S5c ') of the orthogonal reference signal (S5') and thus forms the additional feedback signal (S6 ¹ ). If the gain v 'of the additional loop filter (TP ¹ ) is very large and has the correct sign and the complementary transmission signal (S5c) and the rest

If complementary transmission signal (S5c ') is formed in the appropriate manner, the reduced receiver output signal (S1) typically no longer contains any portion of the alternating component (S5w') of the orthogonal reference signal (S5 ') apart from a control error with stability. The value of the additional The filter output signal (S4) is then a measure of the amplitude of the fluorescence radiation (FL), which the radiation receiver (PD) is out of phase with respect to the pump radiation (LB)

Pump radiation source (PLI) reached. In this way, the phase angle of the

Fluorescence radiation (FL) for pump radiation (LB) or for transmission signal (S5) can be determined. Tests have shown that the phase angle in the form of the time value of the

Fluorescence shift time (ATFL) of the fluorescence radiation (FL) compared to the pump radiation (LB) or the transmission signal (S5) from the magnetic flux density B at the location of the paramagnetic centers (NV1) and possibly other physical parameters such as the electric field strength E, the temperature q, the pressure P, the acceleration a, the rotational speed o and possibly the gravitational field strength g etc. as well as their time derivative and integrals are dependent. In this way the fluorescence phase shift time (ATFL) can be determined. The

Fluorescence phase shift time (ATFL) is the delay of the alternating component (FLw) of the intensity (l _fl ) of the fluorescent radiation (FL) compared to the alternating component (S5w) of the transmission signal (S5).

This system then implements a method for operating a sensor system and / or quantum technological system, the sensor system and / or quantum technological system having a paramagnetic center (NV1) or several paramagnetic centers (NV1), which are also in one or more groups (NVC) of such paramagnetic Centers (NV1) can be arranged in the material of a sensor element and / or quantum technology

Device element that is part of the sensor system and / or quantum technology system, comprises. A modulated transmission of a modulated pump radiation (LB), in particular by the pump radiation source (PLI), takes place by means of a transmission signal (S5). One or more paramagnetic centers (NV1) or one or more groups (NVC) of paramagnetic centers (NV1) in a material of a sensor element and / or quantum technology

Device elements generate modulated fluorescence radiation (FL) which depends on the modulated pump radiation (LB). As already described, it is the one or the other

paramagnetic centers or the group or group (NVC) of paramagnetic centers (NV1) preferably around one or more NV centers, which are optionally arranged in one or more groups (NVC), in a diamond as a sensor element. As also mentioned, the modulated fluorescence radiation (FL) is typically phase-shifted in relation to the modulated pump radiation (LB) by a fluorescence phase shift time (ATFL). That or the paramagnetic Centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element and / or quantum technological device element therefore continue to glow after the excitation by the modulated pump radiation (LB) and then also emit modulated fluorescence radiation ( FL) when there is already no more modulated pump radiation (LB) on the paramagnetic center or centers (NV1) or the group or groups (NVC)

paramagnetic centers (NV1) in the material of the sensor element and / or

quantum technological device element irradiates. This afterglow is represented and measurable here by the additional sensor output signal (out ¹ ). The modulated fluorescence radiation (FL) is thus received and a is generated

Receiver output signal (SO). To determine the afterglow, the intensity (l _fl ) of the modulated fluorescence radiation (FL) of the paramagnetic center (NV1) in the material of the sensor element is determined at times when the modulated emission of the modulated pump radiation (LB) in particular by the pump radiation source (PLI) not taking place. The corresponding dimension is the value of the additional sensor output signal (out ¹ )

This afterglow in the form of the temporal fluorescence shift time (ATFL) depends

typically on the magnetic flux density B and possibly other physical parameters such as the electric field strength E, the temperature q, the pressure P, the acceleration a, the rotational speed o and possibly the gravitational field strength g etc. as well as their time derivatives and integrals. As a rule, this also applies to the fluorescence radiation (FL) and in particular the intensity (l _{f |} ) of the fluorescence radiation (FL).

A second adder (A2) sums the feedback signal (S6) and the additional feedback signal (S6 ¹ ) to form the complex feedback signal (S8), thereby closing the control loop. The sign and the gain of the loop filters (TP and TP ') as well as the rule for the formation of the complementary transmission signal (S5c) and the further, complementary transmission signal (S5c') in the third

Adaptation circuit (OF3) or the further third adaptation circuit (OF3 ') are selected so that stability is established in the control loop and essentially the reduced receiver output signal (S1) does not contain any components of the complex feedback signal (S8) and the alternating component (S5w) of the transmission signal ( S5) and the alternating component (S5w ') of the orthogonal reference signal (S5') apart from system noise and control errors. Fig. 18

FIG. 18 shows the exemplary sensor system structure of FIG. 17 with one folded circuit (S&FI, S&FI ') in each control branch.

Fig. 19

19 shows exemplary signal curves with exemplary signals for a sensor system corresponding in its structure to that of FIGS. 17 and 18. The alternating component (S5w ') of the orthogonal reference signal (S5 ¹ ) is, for example, by p compared to the alternating component (S5w) of the transmission signal (S5) / 2 out of phase. The alternating component (S5w) of the transmission signal (S5) is, for example, PWM-modulated with a pulse duty factor of 50%. The signals are simplified for clarity and only shown schematically with exemplary levels. Due to the simplification in detail, these may differ somewhat in reality. A detailed system simulation is therefore recommended.

Fig. 20

FIG. 20 also corresponds to an expanded system from FIG. 7. FIGS. 9 and 12 can be expanded in an analogous manner. FIG. 20 also shows a simple system for an exemplary one

Sub-function of an integrated circuit (IC) for measuring the intensity (l _fl ) of the

Fluorescence radiation (FL) from paramagnetic centers (NV1) to use an influencing, physical parameter, such as the magnetic flux density B at the location of the

to determine paramagnetic centers (NV1). A signal generator (G) generates another

Alternating component (S5w) of the transmission signal (S5). A loop filter (TP) and an additional loop filter (TR ') are built into the system. The loop filter (TP) and the additional loop filter (TR ') preferably have the same filter characteristic with the same filter function F [X1] with respect to any signal XI. The loop filter (TP) and the additional loop filter (TP ¹ ) are linear filters. That means for the common filter function F [X1] for any real number a and any two signals XI and X2:

F [a * Xl] = a * F [Xl]

F [X1 + X2] = F [X1] + F [X2]

We require the following conditions: F [l] = l

F [S5w] «0

F [S5w * S5w] «l

For the sake of simplicity we assume that the transmission signal (S5) is periodic with the transmission signal period (T _p ). An additional first multiplier (M 1 ') multiplies the reduced one

Receiver output signal (S1) with the complementary alternating component (S5c) to the additional filter input signal (S3 '). The additional loop filter (TR ') filters the filter input signal (S3') to the additional filter output signal (S4 '). For the sake of simplicity, it is assumed here that the additional first multiplier (Ml ¹ ) has the same properties as the first multiplier (Ml). It is also assumed that the additional loop filter (TP ¹ ) has the same properties as the loop filter (TP). A first matching circuit (OF1) adds a direct component (S5g) of the transmission signal (S5) to the alternating component (S5w) of the transmission signal (S5) as described above and, if necessary, carries out a further necessary amplification (hl).

The pump radiation source (PLI) converts the transmission signal (S5) back into a modulated one

Pump radiation (LB) that hits the sensor element directly or, as described above, indirectly and thus the paramagnetic centers (NV1) in the sensor element. There, this pump radiation (LB) excites the paramagnetic centers (NV1) in the material of the sensor element to emit fluorescent radiation (FL). The first filter (F1) allows radiation with the fluorescence wavelength (l _h ) of the fluorescence radiation (FL) - e.g. 637 nm for NV centers - to pass, while the radiation with the pump radiation _wavelength (l _rGhr ) of the pump radiation (LB) from the pump radiation source (PLI ) and thus does not allow the modulated pump radiation (LB) to pass. The fluorescence radiation (FL) is correlated, but typically modulated in a defined phase shifted from the pump radiation (LB). This can now be exploited. The modulated fluorescence radiation (FL) is received by the radiation receiver (PD) after passing through the first filter (F1) and converted into a modulated one

Receiver output signal (SO) converted. The radiation receiver (PD) may include further amplifiers and filters. A first adder (A1) subtracts a complex feedback signal (S8) from the receiver output signal (SO). The result is the reduced receiver output signal (S1). This reduced receiver output signal (Sl) is now in two independent

Circuit parts further processed. First circuit part

A first multiplier (Ml) multiplies the reduced receiver output signal (Sl) by the alternating component (S5w) of the transmission signal (S5) and thus forms the filter input signal (S3). The

Loop filter (TP) typically lets the DC component of the filter input signal (S3) through. The result is the filter output signal (S4) as the output signal of the loop filter (TP). Formally, the first multiplier (Ml) and the low-pass filter of the loop filter (TP) form a scalar product of the reduced receiver output signal (Sl) and the alternating component (S5w) of the transmitted signal (S5). The value of the filter output signal (S4) then indicates how much of the alternating component (S5w) of the transmission signal (S5) is proportionally present in the reduced receiver output signal (S1). The function of this filter output signal (S4) can be compared with a Fourier coefficient. A third

In this example, the adapter circuit (OF3) generates a complementary alternating component (S5c) of the transmission signal (S5) from the alternating component (S5w) of the transmission signal (S5). On the alternatives

Designs that are mentioned above and have the same functional results are pointed out. Ultimately, the point is that the feedback signal (S6) should be modulated complementarily to the transmission signal (S5). A second multiplier (M2) multiplies the filter output signal (S4) by the

complementary alternating component (S5c) of the transmission signal (S5) and thus forms the feedback signal (S6). If the gain of the loop filter (TP) is very large, the reduced

Receiver output signal (S1) typically no longer significant components of the transmission signal (S5) apart from a direct component and a control error with stability. The value of the filter output signal (S4) is then a measure of the intensity (l _fl ) of the fluorescent radiation (FL) that the

Radiation receiver (PD) reached.

Second part of the circuit

An additional first multiplier (Ml ') multiplies the reduced receiver output signal (S1) by the complementary alternating component (S5c) of the transmission signal (S5) and thus forms the additional filter input signal (S3 ¹ ). The additional loop filter (TP ¹ ) lets the direct component of the additional filter input signal (S3 ¹ ) through. The additional filter output signal (S4 ¹ ) results as

Output signal of the additional loop filter (TP ¹ ). Formally, the additional first forms

Multiplier (Ml ') and the additional low pass of the additional loop filter (TP ¹ )

Scalar product of the reduced receiver output signal (S1) and complementary alternating component (S5c) of the transmission signal (S5). This is preferably done in the same way as in the first

Circuit part. The value of the additional filter output signal (S4 ¹ ) then indicates how much of the complementary alternating component (S5c) of the transmission signal (S5) is proportionally present in the reduced receiver output signal (Sl). The function of this additional filter output signal (S4 ¹ ) can be compared with another Fourier coefficient. Reference is made to the alternative designs which are mentioned above and which have the same functional results. An additional second multiplier (M2 ¹ ) multiplies the additional filter output signal (S4 ¹ ) by the alternating component (S5w) of the transmission signal (S5) and thus forms the additional feedback signal (S6 ¹ ). If the gain of the additional loop filter (TP ¹ ) is very high, the reduced receiver output signal (S1) typically no longer contains a portion of the complementary alternating portion (S5c) of the transmitted signal (S5), apart from a direct component and a control error. The value of the additional filter output signal (S4) is then a measure of the amplitude of the

Fluorescence radiation (FL) that reaches the radiation receiver (PD) at times when no pump radiation (LB) is emitted by the pump radiation source (PLI). In this way, too, the phase angle of the time profile, for example the intensity (l _{f |} ) of the

Fluorescence radiation (FL) can be determined for the temporal course of the value (s5w) of the alternating component (S5w) of the transmission signal (S5) as the temporal value of the fluorescence shift time (ATFL). Tests have shown that the phase angle of the fluorescence radiation (FL) with respect to the pump radiation (LB) depends on the magnetic flux density B and / or possibly other physical parameters such as pressure P, temperature q, electric field strength E, acceleration a or

Rotation speed o and its time derivatives and integrals at the location of the paramagnetic centers (NV1) is dependent. In this way, the

Determine fluorescence phase shift time (ATFL). The fluorescence phase shift time (ATFL) is the delay of the alternating component (FLw) of the intensity (l _{f |} ) of the fluorescent radiation (FL) compared to the alternating component (S5w) of the transmission signal (S5).

The advantage of this arrangement is that when measuring via the additional sensor output signal (out ¹ ), the filter (Fl) and a corresponding first adhesive (GL1) for attaching the first filter (Fl) to the radiation receiver (PD) or the sensor element can be omitted which further significantly reduces the cost of the system.

This system then implements a method for operating a sensor system and / or quantum technological system, the sensor system and / or quantum technological system having one or more paramagnetic centers (NV1) or one or more groups (NVC) of paramagnetic centers (NV1) in the material of a sensor element and /or quantum technological device element which is part of the sensor system and / or quantum technological system comprises. A modulated transmission of a modulated pump radiation (LB), in particular by the pump radiation source (PLI), takes place by means of a transmission signal (S5). One or more paramagnetic centers (NV1) or one or more groups of paramagnetic centers (NV1) in a material of a sensor element and / or

quantum technological device element generates a modulated fluorescence radiation (FL) which depends on the modulated pump radiation (LB). As already described, the paramagnetic center or centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) are preferably one or more NV centers in a diamond as a sensor element, which may also be in Groups are arranged. As also mentioned, the modulated fluorescence radiation (FL) is typically phase-shifted in relation to the modulated pump radiation (LB) by a fluorescence phase shift time (ATFL). The one or more paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element and / or quantum technological

Device elements shine after the excitation by the modulated pump radiation (LB) and then still emit modulated fluorescence radiation (FL) when there is no more modulated pump radiation (LB) on the paramagnetic center or centers (NV1) or the group or groups (NVC) paramagnetic centers (NV1) in the material of the sensor element and / or quantum technological device element irradiates. This afterglow is represented here by the additional sensor output signal (out ¹ ). The modulated fluorescence radiation (FL) is thus received and a receiver output signal (SO) is generated. To determine the afterglow, the intensity (l _{f |} ) of the modulated ones is determined

Fluorescence radiation (FL) of the paramagnetic center (NV1) in the material of the

Sensor element at times when the modulated emission of the modulated pump radiation (LB) in particular by the pump radiation source (PLI) and thus the excitation of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of the paramagnetic centers (NV1) no longer takes place. The corresponding measure for the afterglow of the fluorescence radiation (FL) around the fluorescence phase shift time (ATFL) based on the falling edges of the pump radiation (LB) is the value of the additional sensor output signal (out ¹ ). A second adder (A2) sums the feedback signal (S6) and the additional feedback signal (S6 ¹ ) to form the complex feedback signal (S8), thereby closing the control loop. The signs and the gains of the loop filters (TP and TP ') and the formation rule for the complementary transmission signal (S5c) are typically selected in such a way that stability is established in the control loop and essentially the reduced receiver output signal (S1) does not contain any components of the complex feedback signal (S8 ) and the alternating component (S5w) of the transmission signal (S5) and the complementary alternating component (S5c) of the transmission signal (S5) apart from system noise and control errors. The gains of the loop filters (TP and TP ') and their frequency response and other properties are preferably designed to be the same. If they are part of an integrated circuit, for example, this can be done by a matching design.

Fig. 21

FIG. 21 shows the exemplary sensor system structure of FIG. 20 with one folding circuit in each control branch. Reference is made here to the preceding and following figures with folded circuits (S&FI) and their descriptions. Fig. 22

FIG. 22 corresponds to FIG. 21, a first filter (F1) now being inserted by way of example. The first filter (Fl) is preferably again for radiation with the fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) - e.g. 637nm for NV centers - transparent and for radiation with the pump radiation _wavelength (l _rGTΐr ) of the pump radiation ( LB) of the pump radiation source (PLI) is preferably not transparent.

Fig. 23

FIG. 23 shows exemplary signals for the sensor systems of FIGS. 20 to 22. The complex feedback signal (S8) does not have the full amplitude. If the fluorescence phase shift time (ATFL) is a quarter of the transmission signal period (T _p ), it would be a constant value signal. The signals are simplified for clarity and are only shown schematically with exemplary amplitudes.

Fig. 24

FIG. 24 corresponds to FIG. 20 with the difference that the first filter (F1) is provided and that the compensation path is the ideal reference noise source for realizing a thickness Amplifier is executed. In order to have the same noise characteristics as the transmission path via the

Pump radiation source (PLI, LB, NV1, FL, Fl, PD1) must have the compensation path (PLK, KS, NV2, KFL, Fl, PD) in the same way as the transmission path via the pump radiation source (PLI, LB, NV1, FL, Fl , PD1). The compensation radiation source (PLK) in the example in FIG. 24 is preferably of the same type as the pump radiation source (PLI). The pump radiation source (PLI) and the compensation radiation source (PLK) are preferably thermally coupled in the example in FIG. The pump radiation source (PLI) and the compensation radiation source (PLK) are preferably not only designed in the same way, but preferably also at the same electrical, thermal and optical operating point, characterized, among other things, by essentially the same operating current curve, essentially the same operating voltage curve, essentially the same operating temperature and essentially one same design of the following optical system, which in particular the back reflection of the emitted light of the pump radiation source (PLI) back into the pump radiation source (PLI) and the back reflection of the emitted light of the

Compensation radiation source (PLK) back into the compensation radiation source (PLK) and their interaction with each other. Preferably all, less preferably less of the above conditions are met. The pump radiation source (PLI) and the

Compensation radiation source (PLK) in the example of Figure 24 part of the same

Semiconductor substrate (English Chip, Die). The reference sensor element with the paramagnetic reference centers (NV2) in the example in FIG. 24 is preferably manufactured in the same way as the sensor element with the paramagnetic centers (NV1). The density of the paramagnetic reference centers (NV2) irradiated by the compensation radiation (KS) is preferably equal to the density of the paramagnetic centers (NV1) irradiated by the pump radiation (LB). In the example in FIG. 24, the intensity (1 ^) and the intensity density of the paramagnetic reference centers (NV2) irradiating at the typical working point of the sensor system are preferred

Compensation _radiation (KS) equal to the intensity (I _pmp ) and the intensity _density of the pump radiation (LB) irradiating the paramagnetic centers (NV1). For their adjustment, structural device parts and optical functional elements are preferably used in the same way. The first filter (F1) is preferably transparent for the in the example of FIG

Fluorescence radiation (FL) of the paramagnetic centers (NV1) and for the

Compensation fluorescence radiation (KFL) of the paramagnetic reference centers. In the example of FIG. 24, the first filter (F1) is preferably not transparent to the pump radiation (LB) Pump radiation source (PLI) and for the compensation radiation (KS) the

Compensation radiation source (PLK).

A preferably present first barrier (BAI) prevents this in the example in FIG. 24

Crosstalk of the compensation radiation (KS) in the transmission path (PLI, LB, NV1, FL, Fl, PD).

The preferably present first barrier (BAI) prevents the crosstalk of the pump radiation (LB) into the compensation path (PLK, KS, NV2, KFL, F1, PD) in the example in FIG. The second barrier (BA2) which is preferably present prevents direct crosstalk of the pump radiation (LB) into the radiation receiver (PD) in the example in FIG. The third barrier (BA3) which is preferably present prevents, in the example in FIG. 24, the direct crosstalk of the compensation radiation (LB) into the radiation receiver (PD). The barriers (BAI, BA2, BA3) are typically designed in such a way that they merge into one another.

The intensity (l _{kf |} ) of the compensation fluorescence radiation (KFL) and the intensity (l _fl ) of the

Fluorescence radiation (FL) are superimposed in the radiation receiver (PD)

Total radiation intensity. The radiation receiver (PD) generates the receiver output signal (SO) as a function of this total radiation intensity. A first amplifier (VI) amplifies the receiver output signal (SO) to the reduced receiver output signal (Sl). Further processing is analogous to the description of FIG. 20. Instead of the complex one

Feedback signal is in the manner already explained by means of a second matching circuit (OF2), preferably as a linear mapping, the compensation transmission signal (S7) as the value (s7) of the compensation transmission signal (S7) from the sum of the value (s6) of the feedback signal (S6) and of the value (s6 ') of the further feedback signal (S6 ¹ ) formed which again the

Compensation radiation source (PLK) controls. The sensor system of FIG. 24 is able, for example, to change the magnetic flux density B both with the aid of the change in the intensity (l _fl ) of the fluorescent radiation (FL) relative to the intensity (l _{kf |} ) of the

To determine compensation fluorescence radiation (KFL), as well as a change in the magnetic flux density B with the help of the change in the fluorescence phase shift time (ATFL) of the

To determine fluorescence radiation (FL) relative to the compensation fluorescence phase shift time (AKTFL) of the compensation fluorescence radiation (KFL). The fluorescence phase shift time (ATFL) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) typically depends on the magnetic field strength and other physical parameters, as here in this one Scripture mentioned elsewhere. In particular, it typically also depends on the isotopes in the vicinity of the paramagnetic center or centers or groups (NVC) of paramagnetic centers (NV1). Thus, the proposed device is a completely new one

Measuring device and measuring method for the interaction of nuclear spins, for example of ¹³ C carbon isotopes in otherwise isotopically pure diamonds, with their environment and the physical parameters influencing them are possible. For example, even the smallest

Shifts in the GSLAC resonance can be detected by the device proposed here. For example, if the material of the reference element with the reference centers (NV2) is at least one isotope-pure ¹² C diamond in the vicinity of the reference centers (N2) and the material of the sensor element with the paramagnetic centers (NV1) is at least one in the vicinity of the paramagnetic centers (N2) in a first approximation isotopically pure ¹² C-diamonds, which, however, in the area of the paramagnetic centers (NV1) is modified with ¹³ C-carbon isotopes, for example by targeted, focused ion implantation, is in the case of NV centers as paramagnetic centers (NV1) and on NV centers as

Reference centers (NV2) slightly changes the GSLAC resonance of the paramagnetic centers (NV1) compared to the GSLAC resonance of the paramagnetic reference centers (NV2), which can be detected by the system proposed by way of example in FIG. The system proposed by way of example, in FIG. 24, detects the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) and the intensity (l _{kf |} ) of the compensation fluorescence radiation (KFL) of the paramagnetic reference centers (NV2) and determines a value for the difference between the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) and the intensity (l _{kf |} ) of the compensation fluorescence radiation (KFL) in the form of the sensor output signal (out), which in the example in FIG Sensor output signal (out) corresponds, while the further sensor output signal (out ¹ ) of FIG. 24 shows the delay in the time profile of the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) compared to the time profile of the intensity (l _{kf |} ) of the compensation fluorescence radiation (KFL), whereby it also includes an amplitude component that may still have to be corrected.

Fig. 25

FIG. 25 shows the exemplary sensor system structure of FIG. 24 with one holding circuit in each control branch. On the comments on the other figures of sensor systems with

Hold circuits (S&H) are referenced here. Fig. 26

FIG. 26 shows exemplary signals for the sensor systems of FIGS. 24 to 25. The

Compensation transmission signal (S7) does not have the full amplitude. Should the

Fluorescence phase shift time (ATFL) are a quarter of the transmission signal period (T _p ) so it would be a constant value signal. From the sensor output signal (out) and the additional

Sensor output signal (out ') can be based on the ratio of the intensity (l _{kf |} ) of the

Compensation fluorescence radiation (KFL) of the paramagnetic reference centers (NV2) to the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) and the ratio of the compensation fluorescence phase shift time (AKTFL) of the

Compensation fluorescence radiation (KFL) of the paramagnetic reference centers (NV2) to the fluorescence phase shift time (ATFL) of the fluorescence radiation (FL) of the paramagnetic centers (NV1). The signals are simplified for clarity and only shown schematically. The fluorescence phase shift time (ATFL) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) typically depends on the magnetic field strength and other physical parameters, as mentioned elsewhere in this document. In particular, it typically also depends on the isotopes in the vicinity of the paramagnetic center or centers or groups (NVC) of paramagnetic centers (NV1). Thus, by the proposed

Device a completely new measuring device and measuring method for the interaction of nuclear spins, eg of ¹³ C-carbon isotopes in otherwise isotopically pure diamonds, with their environment and the physical parameters influencing them. For example, even the smallest shifts in the GSLAC resonance are possible. If, for example, the material of the reference element with the reference centers (NV2) is at least one in the

Around the reference centers (N2) isotopically pure ¹² C diamonds and, in the case of the material of the sensor element with the paramagnetic centers (NV1), around one at least in the vicinity of the paramagnetic centers (N2) in a first approximation isotopically pure ¹² C diamond, which, however, is in the area of paramagnetic centers (NV1) is modified with ¹³ C-carbon isotopes, for example by targeted focused ion implantation, so is in the case of NV centers as

paramagnetic centers (NV1) and as reference centers (NV2) the GSLAC resonance of the paramagnetic centers (NV1) compared to the GSLAC resonance of the paramagnetic

Reference centers (NV2) changed, which can be detected by the system of FIG. 25 proposed by way of example. The system proposed by way of example, in FIG. 25, detects the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) and the intensity (l _kfi ) of the compensation fluorescence radiation (KFL) of the paramagnetic reference centers (NV2) and determines a value for the difference between the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) and the intensity (l _{kf |} ) of the Compensation fluorescence radiation (KFL) in the form of the sensor output signal (out), which in the example of FIG

Sensor output signal (out), while the further sensor output signal (out ¹ ) of FIG. 25 shows the delay in the time profile of the intensity (l _fl ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) compared to the time profile of the intensity (l _{kf |} ) the

Compensation fluorescence radiation (KFL), whereby it also includes an amplitude component that may still need to be corrected.

Fig. 27

From the text by A. Wickenbrock et. AL "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), 02.08.2016 is in Figure 2a a representation of the fluorescence intensity of the intensity (l _fl ) of the fluorescence radiation (FL) of an individual NV center is known as a function of the magnetic flux density B. In the relevant illustration, the first direction of the NV center axis and the second direction of the magnetic flux density B. In contrast, FIG. 27 of the document presented here shows the dependence of the intensity (l _{f |} ) of the fluorescence radiation (FL) from the magnetic flux density B when the first directions are tilted relative to the second direction - ie the axis of the NV center as the first direction relative to the axis of the magnetic flux density B as the second direction In order to achieve this, for example, a large number of randomly oriented HD-NV diamonds, each with a high density NV centers. As a result, first of all the spikes of the paramagnetic centers (NV-Pl, NV-VM and GSLAC) in the curve of the dependence of the intensity (l _{f |} ) of the fluorescence radiation (FL) on the magnetic flux density (B) disappear and the dependence of the intensity (l _{f |} ) of the

Fluorescence radiation (FL) of the magnitude of the magnetic flux density B above an offset amount of the bias flux density (B ₀ ) of approx. 5mT to 10mT is monotonically falling. Furthermore, due to the high density of NV centers, for example in HD-NV diamonds, the contrast of 4.5% in the publication by A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), 08/02/2016 to up to 50% at high intensity (l _pmp ) of the pump radiation (LB), _i.e. intensive pump radiation power of the pump radiation (LB), and suitable distribution of the NV centers. Reference is made here to Figure 71, an exemplary substrate (D) for use as a sensor element or in a

Sensor element shows. The device in FIG. 71 shows means and methods for further increasing the contrast. In particular, the paramagnetic centers (NV1) in FIG. 71 are arranged in groups (NVC) of paramagnetic centers (NVC) which, in the case of NV centers in diamond, preferably represent areas of FID_NV diamond as paramagnetic centers (NV1). These groups (NVC) of paramagnetic centers (NVC) preferably represent areas with a very high density of NV centers and areas in which the NV centers preferentially couple with one another.

A misalignment or de-calibration of Figure 2a of the publication A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), August 02, 2016 is based on a poor quantum number that leads to a mixture of the quantum states and thus to a decrease in the Intensity (l _fl ) der

Fluorescence radiation (FL) with increasing magnitude of the magnetic flux density B leads. An additional magnetic field is applied in the form of an additional magnetic flux density B, which does not point in the direction of the first direction of the crystal axis. The luminescence behavior of Figure 2a of A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), 02.08.2016 as a function of the magnitude of the magnetic flux density B can therefore only be observed when the dimensional crystals are precisely aligned. A twist of a fraction of a degree makes the resonances disappear.

In particular, the in Figure 2a of A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), 02.08.2016 recognizable resonance points (peaks) are only possible when the magnetic field is aligned with the

Crystal axis recognizable.

FIG. 27 shows the course that results when the alignment is decalibrated (that is, a different first and second direction). Only then is it possible to measure the amount of the magnetic flux density B with any orientation of the magnetic field. As can easily be seen in FIG. 27, the relationship between the magnitude of the magnetic flux density B and the intensity (l _fl ) of the fluorescent radiation (FL) is greatest in an optimal operating point range. By means of an additional permanent magnet and / or a powered electrical compensation coil (LC), a magnetic bias flux density (B ₀ ) can be superimposed on the magnetic flux density B to be measured, whereby the change in the intensity (i _{f |} ) of the Fluorescence radiation (FL) is maximized with changes in the external magnetic flux density B.

The magnetic flux density B at the location of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) can be regulated by means of a controller (NV1) above a minimum magnetic flux density ( B _m ) and kept close to the optimal magnetic flux density (B _opt ). For this purpose, the controller preferably uses a measured value, e.g. the value (s4) des

Filter output signal (S4) and, depending on this value (s4) of the filter output signal (S4) as an actual value, slowly readjusts the coil current of a compensation coil (LC), for example by means of an operating point control signal (S9). The use of other, e.g. mechanical and / or micromechanical actuators is possible. Once the system has been adjusted, the current value of the output signal from the controller (RG), for example the current value (s9) of the operating point control signal (S9), represents the current measured value of the magnetic flux density (B).

A non-alignment of the first direction with respect to the second direction can be recognized from the fact that no resonances occur. Of course, you can always align the magnetic field so that these resonances occur. However, if a device is intended and suitable for measuring magnetic fields in which the first and second directions do not coincide, then it is also within the scope of the corresponding claims if their other features apply, even if they are in a specific one Magnetic field direction has said resonances.

By avoiding the resonance cases of Figure 2a of the A. Wickenbrock et. AI. "Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), August 02, 2016 thus results in the strictly monotonically falling curve in FIG. 27 above a minimum flux density (B _m ) for the dependence of the intensity (l _fl ) of the fluorescence radiation (FL) on the magnetic flux density B at the location of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1), The curve is then also bijective and can therefore be calibrated. Only then will it be possible to mass-produce a robust sensor system cost-effectively. Fig. 28

FIG. 28a again shows the resulting course of the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic center (NV1) when the alignment is decalibrated (i.e. one

different first and second directions). FIG. 28a corresponds to FIG. 27. Only then is any orientation of the magnetic field possible. As can easily be seen in FIG. 28a, the relationship between the magnetic flux density B and the intensity (l _fl ) is the

Fluorescence radiation (FL) is greatest in an optimal operating point range. A bias field can be superimposed on the field to be measured by means of an additional permanent magnet and / or an energized electrical compensation coil (LC), whereby the change in the intensity (I _fi ) of the fluorescence radiation (FL) is maximized.

A non-alignment of the first direction with respect to the second direction can be recognized from the fact that no resonances occur. Of course, you can always align the magnetic field so that these resonances occur. However, if a device is intended and suitable for measuring magnetic fields in which the first and second directions do not coincide, then it is also within the scope of the corresponding claims if their other features apply, even if they are in a specific one Magnetic field direction has said resonances.

By avoiding the resonance cases in FIG. 2a of the A. Wickenbrock et. AI.

"Microwave-free magnetometry with nitrogen-vacancy centers in diamond" Appl. Phys.Lett, 109, 053505 (2016), August 02, 2016 thus results in the strictly monotonically falling curve of FIG. 28a, which is then also bijective and can therefore be calibrated. Only then will it be possible to mass-produce a measuring system.

A differentiation of the curve in FIG. 28a according to the magnetic flux density B results in the curve in FIG. 28b, which reproduces the sensitivity of the intensity (l _{f |} ) of the fluorescent radiation (FL) as a function of the magnetic flux density B. The optimal working point with an optimal magnetic flux density (B _opt ), at which the change in intensity (l _{f |} ) becomes a maximum as a function of the value of the magnetic flux density B, can be clearly seen.

The actual operating point of a sensor system in the form of a constant magnetic bias flux B ₀ , which is generated for example by a permanent magnet and / or a compensation coil (LC) and an external magnetic flux density B to be measured, is preferred is superimposed, placed above a minimum flux density (B _m ) to ensure that the control always reacts with the correct sign. The distance between the selected working point of the

magnetic bias flux density (B ₀ ) and the minimum flux density (B _m ) is preferably selected depending on the application in question so that a jump in the current system state from the area on the right of the minimum flux density (B _m ) to a new system state on the left

Minimum flux density (B _m ) due to a jump in an externally superimposed magnetic flux density B is unlikely.

As can easily be seen in FIG. 28, this is the relationship between the magnetic

Flux density B and the intensity (l _{f |} ) of the fluorescence radiation (FL) in the optimal

Working point area around an optimal magnetic flux density (B _opt ) largest. A bias field (B ₀ ) can be superimposed on the magnetic flux B to be measured by an additional permanent magnet and / or an energized electrical compensation coil (LC), whereby the sensitivity of the sensor system is maximized by optimal setting of the working point. The value of the magnetic flux density B _{0 of} the magnetic bias field is preferably equal to the value of the optimal magnetic flux density (B _opt ).

Fig. 29

FIG. 29 shows the setting of the optimal working point of a sensor system in the form of a constant magnetic bias flux B ₀ , which is generated, for example, by a compensation coil (LC) and is superimposed on an external magnetic flux density B to be measured. The value of the magnetic flux density B _{0 of} the magnetic bias field is preferably equal to the value of the optimal magnetic flux density (B _opt ). A regulator (RG) energizes by means of a

Operating point control signal (S9) the compensation coil (LC). The controller (RG) regulates this

Operating point control signal (S9) for energizing a compensation coil (LC) and thus the magnetic flux density B at the location of the paramagnetic center (NV1) slowly based on the filter output signal (S4). The nominal value of the magnetic flux density B is preferably equal to the value of the optimal magnetic flux density (B _opt ) at which the greatest dependence of the intensity (In) of the fluorescent radiation (FL) on the magnetic flux density B occurs. The controller (RG) preferably compares the current value of the filter output signal (S4) as the actual value of the control with an internal controller or external controller reference value (not shown in FIG. 31), which is preferably used to set the optimal magnetic flux density (B _opt ) or a value of the magnetic flux density B close to it. Regulation by the controller (RG) takes place preferably with a first time constant Xi, while the compensation control by means of the loop filter (TP) takes place with a second time constant x ₂ . That is, a first sensor output signal (out) reflects the short-term changes in an alternating magnetic flux density field, while a second sensor output signal (out ") reflects the long-term changes or the current quasi-static operating point of the sensor system. In order for this to be possible, the first time constant is preferably greater than the second Time constant x _2. This means that Ci> t _2. The controller is preferably a PI controller, but other controllers can be used.

FIG. 29 essentially corresponds to FIG. 7 except for the readjustment of FIG

Operating point setting by the controller (RG).

The second sensor output signal (out ") can now be used to detect a much larger

Measuring range can be used. The device then corresponds to a fluxgate, for example. As an example, we refer to US 8 952 680 B2, the technical teaching of which, in combination with the technical teaching presented here, is a full part of this disclosure, insofar as this is permissible in the legal system of the relevant country in which the nationalization takes place when this application is later nationalized is. If NV centers are used as paramagnetic centers (NV1), the measuring range without this control typically extends from approx. 10mT to approx. 40mT and possibly even a little beyond this range. This measuring range is massively enlarged by the compensatory counter-regulation. This is especially true for current sensors with a large current measuring range, especially in missiles and floating objects, vehicles and

Electric vehicles or in power generation and power distribution systems as well as electrical machines.

Fig. 30

In an analogous manner, FIG. 30 shows the system of FIG. 9 supplemented by the hold circuit (S&H) and the trigger signal (STR). Reference is made to the descriptions of FIGS. 5, 8, 10, 14, 15, 18, 21, 22, 25 with regard to the functioning of the holding circuit (S&H) and the trigger signal (STR).

Fig. 31

FIG. 31 largely corresponds to FIG. 10 with the difference that the said controller (RG) now readjusts the magnetic operating point of the sensor system in cooperation with a compensation coil (LC). FIG. 31 shows, like FIG. 29, the setting of the optimum magnetic operating point of a sensor system in the form of a constant magnetic bias flux B ₀ , which is generated for example by a compensation coil (LC) and an external magnetic flux density B to be measured is superimposed. Said controller (RG) energizes the compensation coil (LC) by means of an operating point control signal (S9). The controller (RG) regulates this

Operating point control signal (S9) for energizing a compensation coil (LC) and thus the magnetic flux density B at the location of the paramagnetic center (NV1) slowly based on the filter output signal (S4). The controller (RG) preferably compares the current value of the filter output signal (S4) as the actual value of the control with an internal controller or external controller reference value, not shown in FIG. 31, which preferably corresponds to the optimal flux density (B _opt ). The regulation by the controller (RG) is preferably carried out again with the first time constant Xi, while the compensation regulation by means of the loop filter (TP) with the second

Time constant x ₂ takes place. That is to say, a first sensor output signal (out) reflects the short-term changes in an alternating magnetic flux density field, while a second sensor output signal (out ") reflects the long-term changes or the current quasi-static operating point of the

Sensor system reproduces. So that this is possible, the first time constant Xi is preferably greater than the second time constant x _2, ie the inequality Ci> t ₂ preferably applies _. The controller is preferably a PI controller. However, it is possible to use other controllers.

The current through the compensation coil (LC) changes the magnetic flux density B at the location of the paramagnetic centers (NV1) of the sensor element and thus the intensity (l _{f |} ) of the

Fluorescence radiation (FL) of the paramagnetic centers (NV1) when irradiated with the

Pump radiation (LB) with pump radiation _wavelength (Ä _pmp ) of the pump radiation _source (PLI). This is used for feedback.

FIG. 31 essentially corresponds to FIG. 10 except for the readjustment of FIG

Operating point setting.

The second sensor output signal (out ") can now be used to detect a much larger

Measuring range can be used. In the case of using NV centers as paramagnetic centers (NV1) without this regulation, the measuring range typically extends from approx. 10mT to approx. 40mT and possibly a little beyond this range. This measuring range is massively enlarged by the compensatory counter-regulation. This is especially true for current sensors with a large current measuring range, especially in missiles and floating objects, vehicles and Electric vehicles or in power generation and power distribution systems as well as electrical machines.

Fig. 32

FIG. 32 corresponds to the exemplary combination of FIG. 31 and FIG. 25. In contrast to FIG. 25, the sensor system of FIG. 32 not only has the controller (RG), which is based on the

Filter output signal (S4) generates an operating point control signal (S9) as the actual value, with which the

Compensation coil (LC) is energized, which then sets the bias value B ₀ for the magnetic operating point of the system.

In addition to the components of FIG. 31, the sensor system has another one

The operating point control signal (Sil) indicates that another compensation coil (LCK) is energized. The further compensation coil (LCK) is preferably manufactured in the same way as the compensation coil (LC) and is arranged opposite the paramagnetic reference centers (NV2) in the same way as the compensation coil (LC) is arranged opposite the paramagnetic centers (NV1). The further compensation coil (LCK) is preferred in the same way by the further

Operating point control signal (Sil) energized, like the compensation coil (LC) by the

Operating point control signal (S9) is energized. This is preferably the

paramagnetic reference centers (NV2) in the same magnetic working point with the same magnetic bias flux density B ₀ as the paramagnetic centers (NV1). This extension of the sensor system extends the measuring range of the sensor system of FIG. 15. With the aid of a more complex coil system, as shown in the exemplary FIG. 72 of this document, the direction of the magnetic flux density can be set so that resonances of paramagnetic centers can be measured. Their position in the form of predeterminable magnetic flux densities B at which they occur is well known. As a result, a sensor system according to the proposal can calibrate itself, since it uses the offset value of the permanently applied

Can precisely determine the magnetic field. For example, a rotation of a

Magnetic field can be determined exactly by a few nanorad. For this purpose, the sensor device rotates the magnetic field acting on the paramagnetic center (NV1) or the paramagnetic centers (NV1) or on the group or groups (NVC) of paramagnetic centers with the aid of a coil system as in Figure 72, for example by changing the current supply to the coil pairs of the coil system of FIG. 72 until such a resonance, for example the GSLAC resonance in NV centers as paramagnetic centers, occurs. Unless the material of a substrate (D) of the sensor element is isotopically pure, this resonance lies at a very specific point in the magnetic flux density. As a rule, for example, diamonds consist mainly of ¹² C isotopes without nuclear spin. The ¹³ C-carbon isotope has a nuclear spin that leads to a

Splitting this resonance leads. By specifically coupling such ¹³ C-carbon isotopes as core centers with NV centers as paramagnetic centers, gravitational fields and other parameters that influence this coupling can now be measured. From the decency of the splitting between the peaks, it is of course also possible to infer physical parameters that influence this splitting, such as the magnetic flux density B.

Fig. 33

FIG. 33 shows a possible mechanical arrangement of the most important device parts of a proposed system with respect to one another. It comprises an integrated circuit (IC) which, for example, comprises the receiver (PD) and the signal generator (G) and the evaluation circuit (VI, Ml, TP). The receiver (PD) can of course also be manufactured separately from the integrated circuit (IC). Further components that can also be part of the integrated circuit (IC) are described below. In particular, the integrated circuit can include the above-described components of the sensor system, insofar as they can be integrated, or emulate them, for example, in the form of a signal processor with a signal processor program. A first filter (F1), which is preferably an optical filter, is arranged above the receiver. In the example in FIG. 33, this first filter (F1) is attached to the surface of the integrated microelectronic circuit (IC) by means of a fastening means (Ge), e.g. B. glued on by means of a transparent adhesive. Here UHU and gelatine have proven themselves as fasteners (Ge). The bonding by means of the fastening means (Ge) is preferably transparent for the radiation with the fluorescence radiation wavelength (l _h ) - e.g. 637 nm for NV centers - the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the material of a sensor element which is mounted on the side of the first filter (F1) facing away from the radiation receiver (PD) by means of a fastening means (Ge), for example by means of adhesive bonding. Here, too, UHU and gelatine have proven their worth as fasteners (Ge). The integrated microelectronic circuit (IC) is preferably a separated crystal, also called a chip or die. The integrated microelectronic circuit (IC) is preferably a CMOS circuit, a bipolar circuit or a BiCMOS circuit. The material of the microelectronic

Circuit (IC) is preferably silicon. If an III / V material is used as the carrier material for the integrated microelectronic circuit (IC) is used, a co-integration of a light-emitting structure - eg an LED or eg a laser - as a pump radiation source (PLI) with the

microelectronic circuit (IC) and with the radiation receiver (PD) conceivable. At this point, reference is made to the pending international application PCT / DE 2020/100 430, which has not yet been published at the time of filing this international application, the technical teaching of which in combination with the technical teaching presented here is a full part of this disclosure, insofar as the later Nationalization of this application that in the

Legal system of the state in question in which nationalization is permitted. Instead of a vertical arrangement, a lateral arrangement makes sense. In the case of FIG. 2, for the sake of simplicity, we assume that the pump radiation source (PLI) is not co-integrated, but is constructed separately. In the example of Figure 33, the sensor element is with the

paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) mechanically connected to the first filter (Fl) by means of a fastening means (Ge). Preferably it is solidified gelatine or eagle owl glue (see also data sheet 63646 - UHU ALLESKLEBER folding box 35 g DE - 45015). The pump radiation source (PLI), which is preferably an LED or a laser, irradiates this

paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element with pump radiation (LB). This pump radiation (LB) excites the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element to emit fluorescent radiation (FL). The fastening material (Ge) is preferably essentially transparent for the radiation with the pump radiation wavelength (l _r , _hr ) of the pump radiation (LB) of the pump radiation source (PLI), i.e. the LED or the laser, and essentially transparent for radiation with the fluorescence radiation wavelength ( lh) the

Fluorescence radiation (FL) of the paramagnetic centers (NV1) - e.g. 637nm for NV centers -. The first filter (F1) is preferably essentially transparent to radiation with the

Fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) in the material of the sensor element. The first filter (F1) is preferably essentially not transparent to radiation with the pump radiation _wavelength (l _rGhr ) of the pump radiation (LB) of the pump radiation source (PLI), that is to say the LED or the laser. Essentially, this means that certain slight deviations from the relevant statement are permissible which do not affect the function of the sensor system in such a way that a function according to the specification is violated, i.e. not working. Ultimately, the radiation receiver (PD) together with the first filter (F1) forms a radiation receiver that is essentially only used for radiation with the

Fluorescence radiation wavelength (l ^) of the fluorescence radiation (FL) of the paramagnetic

Center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element is sensitive and in the

_Is essentially not sensitive to the radiation with the pump radiation _wavelength (1 _rGhr ) of the pump radiation (LB) of the pump radiation source (PLI). The integrated circuit (IC) now uses the transmit signal (S5) it generates and modulates, preferably to modulate the pump radiation (LB) from the pump radiation source (PLI) corresponding to the modulation of the alternating component (S5w) of the transmit signal (S5). This pump radiation (LB) modulated with the transmission signal (S5) hits the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element. In

Depending on the magnetic flux B at the location of the paramagnetic centers (NV1) in the material of the sensor element and / or possibly depending on other physical parameters that the

Fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1), they then emit a modulated fluorescence radiation (FL) whose modulation depends on the modulation of the incoming Pump radiation (LB) and thus the modulation of the

Transmission signal (S5) depends.

This modulation of the intensity (I _pmp ) of the pump radiation (LB) thus _{results in} a correlated modulation of the intensity (I _{f |} ) of the fluorescence radiation (FL). Hence the

Receiver output signal (SO) of the radiation receiver (PD) of the integrated circuit (IC), which is hit by the modulated fluorescence radiation (FL), also modulated. Since the intensity (In) of the fluorescence radiation (FL) depends on the value of the magnetic flux B at the location of the

The modulation depends on the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element and / or on the values of other physical quantities such as pressure and temperature of the receiver output signal (SO) also from the magnetic flux B at the location of the paramagnetic center or centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element and / or said other physical quantities, for example the magnetic flux B. The integrated circuit (IC) can now evaluate this modulation of the receiver output signal (SO) and, depending on the result of this evaluation, actuate actuators or change their activity. For example, the integrated circuit (IC) can have a first coil (LI) for use as a compensation coil (LC) and this first coil (LI) can be energized differently depending on the result of this evaluation. Reference is made here to FIGS. 29 to 32 and their associated description. With suitable positioning of the sensor element with the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) relative to the first coil (LI), the integrated circuit (IC1) can this way a change in the magnetic flux density B at the location of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) e.g. by means of a controller (RG) as part of the integrated Effect circuit (IC). Thus, the integrated circuit (IC) can change the magnetic flux density B at the location of the paramagnetic center (NV1) or the

paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) as a modulation change of the receiver output signal (SO) and recorded via a controller (RG) within the integrated circuit (IC) by changing the current supply to the first coil ( LI) in their function as compensation coil (LC). Said first coil (LI) is preferably also part of the integrated circuit (IC). It can then be manufactured, for example, as a single or multi-layer coil and / or as a flat coil. The first coil (LI) can also be manufactured separately.

Fig. 34

FIG. 34 shows a so-called open cavity housing in plan view. The housing comprises a housing base (BO). This housing base (BO) is surrounded by a circumferential wall (WA) so that the housing base (BO) together with this wall (WA) forms an upwardly open cavity (CAV) with an upwardly open assembly opening (MO). In the following, components can be installed in the cavity (CAV). FIG. 34 is very roughly simplified so that the essential idea of the proposal disclosed here becomes transparent. In the example in FIG. 34, four exemplary contacts (LF1, LF5, LF6, LF4) are provided. The number of contacts and their shape can vary. Preferably, the final outer shape of the fully assembled and closed housing (FIG. 46) after the cover (DE) has been put on, when viewed from the outside, corresponds to a standard housing, such as a QFN housing, so that fully automatic Pick and place machines can be used to assemble the final, sealed housing on printed circuit boards. The use of an open-cavity housing to manufacture a quantum optical component is new. The housing base (BO) and the wall (WA) of the open-cavity housing and also the cover (DE) attached later are preferably made of thermosetting plastic, so that the housing with the components contained therein is used, for example, in a conventional soldering process for semiconductor components a printed circuit (English PCB) can be attached. Mounting surfaces (LF2, LF3) are preferably incorporated into the housing base (BO). These are preferably made of metal on the surface. This metal is preferably coated in order to ensure better adhesion of the bond wires. These mounting surfaces are referred to below as the lead frame surface.

In the example in FIG. 34, a third lead frame area (LF3) and a second lead frame area (LF2) are incorporated into the housing base (BO). However, their surfaces are preferably exposed within the cavity (CAV) of the open-cavity housing. In the example in FIG. 34, the contacts of the housing are made as leadframe surfaces (LF1, LF5, LF4, LF6) that penetrate the circumferential wall (WA) and thus enable electrical contact through the wall (WA). In the example in FIG. 34, a first lead frame area (LF1) penetrates the circumferential wall (WA). In the example in FIG. 34, a fourth lead frame area (LF4) penetrates the circumferential wall (WA). In the example in FIG. 34, a fifth lead frame area (LF5) penetrates the circumferential wall (WA). In the example in FIG. 34, a sixth lead frame area (LF6) penetrates the circumferential wall (WA).

The proposed housing particularly preferably has at least three connections, better precisely three connections: a positive supply voltage line (Vdd), a reference potential line (GND), hereinafter referred to as ground, and an input / output line as a sensor output signal (out). A restriction to these three connections is particularly cost-effective. The integrated circuit (IC) is supplied with electrical energy by the supply voltage line (Vdd) and the reference potential line (GND). The sensor output signal (out) can be digital and / or analog. In the example of the sensor systems in the previous figures, the output (out) is typically analog. The sensor systems of the preceding figures can, however, also be implemented digitally by inserting analog-to-digital converters and digital-to-analog converters. A sensor system preferably also has a computer unit, for example a signal processor, which controls the sensor system and establishes communication with the outside world. Such Computer unit preferably also includes a data interface as a sensor output signal (out).

The input / output of the housing is then preferably a bidirectional single-wire data bus

Data bus interface of the computer system of the sensor system. Known automotive data buses such as the CAN bus, LIN data bus, the DSI3 data bus or the PSI5 data bus are particularly suitable. Other data buses within the meaning of this document can, for example, be an Ethernet data bus, an SPI data bus, or sensor data buses. IEEE P1451, field buses e.g. according to IEC 61158 or IEC 61784 or the KNX data bus for smart home applications or PWM signaling or other pulse-modulated signaling or even radio interfaces such as ZigBee, Bluetooth, WLAN, mobile radio interfaces such as GSM, UMTS etc. to name a few examples. For example in the case of the LIN data bus and / or the DSI-3

Data bus, a fourth connection can be provided as a continuation of the data bus.

The computer system of the sensor system therefore preferably has a first data bus interface which is connected to a first connection of the housing (e.g. LF5) and a second

Data bus interface that is connected to a second connection of the housing (e.g. LF6), which is arranged opposite the first connection (e.g. LF5). The supply voltage is then preferably connected to a third connection on the housing (e.g. LF1). The reference potential (GND) is then preferably connected to a fourth connection of the housing (e.g. LF4). In this case, it is possible to use an auto-addressing method from the prior art to determine the position of the housing with the sensor system in the data bus and thus determine a software address that allows each built-in sensor system to be addressed with an individual, predetermined by the physical position Sensor address allowed. As fonts for such

Auto-addressing methods and data bus architectures are cited here by way of example: EP 1 490 772 Bl, DE 10 2017 122 365 B3, the technical teaching of which in combination with the technical teaching presented here is a full part of this disclosure, insofar as in the later nationalization of this application the in the legal system of the state in which the nationalization is permitted.

This is especially true for biometric and / or medical applications with very many

Sensors are very desirable because they reduce costs.

Fig. 35

FIG. 35 shows the exemplary housing of FIG. 34 in cross section. The cavity (CAV) and the mounting opening (MO) are marked. Figs. 36 to 46

FIGS. 36 to 46 describe an exemplary assembly process for a proposed sensor system in a proposed housing. The description is greatly simplified in order to keep the drawings clear and to present the basic principle in a way that can be reworked. The drawings therefore do not reveal the full functional principle of the sensor system as in the previous figures, but only the methodology of the construction of such

Sensor system in a suitable housing and this housing. The structure of a specific sensor system thus only results from the joint consideration of FIGS. 36 to 46 with the description and the preceding and possibly following figures together with the description.

Fig. 36

In FIG. 36, a third adhesive (GL3) is first applied to the third lead frame area (LF3), for example with the aid of a dispenser. With the aid of a dispenser, a second adhesive (GL2) is applied to the second lead frame surface (LF2).

Fig. 37

In Figure 37, the third adhesive (GL3) on the third lead frame surface (LF3) is the

Pump radiation source (PLI), for example a green LED (PLI) set and thus attached to the third lead frame surface (LF3). An LED of the type VLDTG1232R (opening angle +/- 9 °; 525 nm wavelength) and a laser diode from Osram of the type PLT5 520B have already been successfully used as the pump radiation source (PLI).

The third adhesive (GL3) is preferably electrically conductive. In this case, there is an electrical and thermal connection between the pump radiation source (PLI) and the third lead frame area (LF3).

Fig. 38

In FIG. 38, an integrated circuit (IC) is placed in the second adhesive (GL2) and thus attached to the second lead frame surface (LF2). The second adhesive (GL2) is preferably electrically conductive. In this case, an electrical connection is created between the back of the integrated circuit (IC) and the wide lead frame area (LF2). In the example, the integrated circuit (IC) comprises the radiation receiver (PD) and the first coil (LI) as a compensation coil (LC), which in the example in FIG. 38 surrounds the radiation receiver (PD). Reference is made at this point to the pending international application PCT / DE 2020/100 430, which was not yet published at the time of filing this international application, the technical teaching of which is given in

Combination with the technical teaching presented here is a full part of this disclosure, insofar as this is permitted in the legal system of the country in which the nationalization takes place in the subsequent nationalization of this application.

Fig. 39

This step is necessary if the first filter (F1) is not already part of the integrated circuit (IC) and is implemented, for example, as a metal-optical filter in the metallization stack of the integrated circuit (IC) and if the first filter (F1) is not required by others Measures such as measuring the afterglow of the fluorescence radiation (FL) at times when the pump radiation (LB) has been switched off and / or has faded is obsolete. In FIG. 39, a first adhesive (GL1) is applied to the surface of the integrated circuit (IC) in the area of the radiation receiver (PD). The first adhesive (GL1) is preferably essentially transparent to the

Fluorescence radiation (FL) of the paramagnetic centers (NV1) in the material of the sensor element.

Instead of a first adhesive (GL1), other functionally equivalent ones can of course also be used

Fastening methods for the first filter (F1) described below in FIG. 40 can be used.

Fig u r 40

This step is necessary if the first filter (F1) is not already part of the integrated circuit (IC) and is implemented, for example, as a metal-optical filter in the metallization stack of the integrated circuit (IC) and if the first filter (F1) is not required by others Measures such as measuring the afterglow of the fluorescence radiation (FL) at times when the pump radiation (LB) has been switched off and / or has faded is obsolete. The first filter (F1) is thus for an optical quantum technological device, namely the said sensor system

provided, the quantum technological device being one or more paramagnetic Centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1) and wherein electromagnetic radiation occurs or is used in the sensor system and wherein the first filter (F1) is intended to allow predetermined proportions of this radiation to pass and not to allow other parts of the electromagnetic radiation to pass through, and wherein the filter is constructed from metallization pieces of the metallization stack of an integrated microelectronic circuit. Reference is made here to the documents US 9 958 320 B2,

US 2006 0 044429 A1, US 2010 0 176 280 A1, WO 2009 106 316 A2, US 2008 0 170 143 A1 and EP 2 521 179 B1 are referred to in this context as examples of micro-integrated wave-optical filters and functional elements. The technical teaching of these documents in combination with the technical teaching of this international application is a complete part of this disclosure, insofar as the national law of the country in which the nationalization takes place allows this for the later nationalization of this application. On the books B. Kress, P. Meyrueis,

"Digital Diffractive Optics", J. Wiley & Sons, London, 2000 and B. Kress, P. Meyrueis, "Applied Digital Diffractive Optics", J. Wiley & Sons, London, 2009 are noted. Basic principle of a

Metal-optical filters in a micro-integrated optical system is the production of more or less regular structures with different dielectric constants and / or conductivity in the order of magnitude of the respective wavelength or less, so that the intended effects result from constructive and destructive interference.

In FIG. 40, the first filter (F1) is placed in the first adhesive (GL1). The first filter (F1) is preferably essentially transparent to the fluorescence radiation (FL) of the paramagnetic centers (NV1) in the material of the sensor element. The first filter (F1) is preferably essentially not transparent to radiation with the pump radiation wavelength (I _{r [gir} ) of the pump radiation (LB) of the pump radiation source (PLI). The first filter (F1) and the first adhesive (GL1) can be omitted if the radiation receiver (PD) is designed from the outset so that it is suitable for the

Fluorescence radiation (FL) of the paramagnetic centers (NV1) in the material of the sensor element is essentially sensitive and is not sensitive to the pump radiation (LB) of the pump radiation source (PLI). In this respect, the common functionality of the radiation receiver (PD), the first adhesive (GL1) and the first filter (Fl) can also be regarded as a radiation receiver (PD) that is responsible for the fluorescence radiation (FL) of the paramagnetic centers (NV1) in the material of the sensor element Is essentially sensitive and is not sensitive to the pump radiation (LB) of the pump radiation source (PLI). Fig. 41

In FIG. 41 the sensor element with the paramagnetic center or centers (NV1) is placed on the first filter (F1). This step can also be carried out together with the following step in FIG. The sensor element comprises the paramagnetic centers (NV1) in the material of the sensor element. The sensor element preferably comprises one or more crystals with paramagnetic centers (NV1). It is preferably one or more diamond crystals with one or more NV centers. One or more diamonds with a high density of NV centers are preferred.

Fig. 42

In FIG. 42, the fastening means (Ge) for fastening the sensor element with the paramagnetic centers (NV1) in the material of the sensor element is introduced on the first filter (F1). It is preferably gelatin. UHU has also proven itself. The gelatin is preferably mixed with the sensor elements and is applied together by means of a dispenser. In the disclosure presented here, reference is expressly made to DE 10 2019 114 032.3 and the international patent application PCT / DE 2020/100430, which was still unpublished at the time of filing for this document, the disclosure content of which in combination with the disclosure content of this document is a full part of this disclosure as far as the legal system of the country in which the nationalization of the

international filing, this is permitted.

Fig. 43

In FIG. 43, further electrical connections are made by bonding wires. Here the first bonding wire (BDI), the second bonding wire (BD2), and the third bonding wire (BD3) are only examples. In reality, the number of bonding wires is significantly higher. The bonding wires drawn here are only for illustration.

Fig. 44

In FIG. 44, a fourth adhesive (GL4) is applied to the upper edges of the walls (WA). Instead of a fourth adhesive (GL4), an equivalent connecting means or

Connection methods are used. If the walls (WA) are, for example, made of a preferably optically non-transparent glass or ceramic or metal, the use of a glass solder is conceivable, for example. Fig. 45

In FIG. 45, the cover (DL) provided with a reflective material (RE) (for example a paint with titanium oxide or a mirror material) as a reflector (RE) is placed on the upper edge of the wall (WA). The reflector (RE) is an exemplary optical functional element for the possible optical coupling of the pump radiation source (PLI), the

Compensation radiation source (PLK), the radiation receiver (PD), the sensor element with the paramagnetic center or centers or with the group (NC) or groups (NVC)

paramagnetic centers (NV1) and, if applicable, the reference element explained later with the reference center or centers (NV2) or the group or groups (NVC2) of the reference centers (NV2), whereby, depending on the design, only some of these coupling options may be used. The lid (DE) is preferably placed in a controlled atmosphere, for example in a protective gas or noble gas and / or in a vacuum and / or in an atmosphere with reduced pressure. This avoids the formation of condensation on the optical functional elements during operation when it is cold.

Fig. 46

After the cover (DE) has been put on and glued or welded or soldered, the reflector (RE) can radiate the pump radiation (LB) from the pump radiation source (PLI) as reflected pump radiation (LB) into the sensor element. There this reflected pump radiation (LB) stimulates the paramagnetic centers (NV1) in the material of the sensor element to emit the

Fluorescence radiation (FL). This fluorescence radiation (FL) is received and processed by the radiation receiver (PD), which is part of the integrated circuit (IC) here by way of example. The reflector (RE) thus serves as an optical functional element of the housing that the

paramagnetic centers (NV1) in the material of the sensor element with the pump radiation source (PLI) optically coupled.

Fig. 47

47 largely corresponds to FIG. 46, with the difference that the sensor element with the substrate (D) with the paramagnetic center or centers (NV1) or with the group or groups (NVC) of paramagnetic centers (NV1) is not on the radiation receiver ( PD), but is attached directly to the pump radiation source (PLI). This has the advantage of increasing the contrast (KT). The first filter (F1) is preferably directly on the sensor element with the or the paramagnetic centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1) placed and attached. A fastening means is preferred for fastening the sensor element, which comprises a substrate (D) with one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1), and the first filter (F1) (GE), for example gelatine or eagle owl, is used. This creates a light-emitting component, consisting of the pump radiation source (PLI), which sends the pump radiation (LB) directly into a substrate (D) of the sensor element with the paramagnetic center or centers (NV1) or with the group or groups (NVC) of paramagnetic centers (NV1) radiates in, and the sensor element with the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1), which preferably have a high density at least locally within the sensor element, and the first filter, which is preferably not transparent for radiation with the pump radiation wavelength (l _r , _hr ) of the pump radiation (LB) of the pump radiation source (PLI) and which is preferred for radiation with the fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) - e.g. 637nm at NV centers - is transparent. Since the intensity (l _{f |} ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) of the sensor element depends on the magnetic flux density B at the location of the paramagnetic centers, the result is a light-emitting electronic component in which the intensity (l _fl ) of the The emitted fluorescence radiation (FL) depends on the magnetic flux density B flowing through the light-emitting component (Fl, NV1, PLI), or on other parameters such as the electric field strength E or the temperature or the acceleration or the rotational speed o or the gravitational acceleration g . We refer to the publications G. Balasubramanian, IY Chan, R. Kolesov, M. Al-Hmoud, J. Tisler, C. Shin, C. Kim, A. Wojcik, PR Hemmer, A. Krueger, T. Hanke, A .Leitenstorfer, R. Bratschitsch, F. Jeletzko, J. Wrachtrup, "nanoscale imaging magnetometry with diamond spins under ambient conditions", Natur 455, 648 (2008) with regard to magnetic field measurements with NV centers and G. Kucsko, PC Maurer, NY Yao, M. Kubo, HJ Noh, PK Lo, H. Park, MD Lukin, "Nanometre-scale thermometry in a living cell", Nature 500, 54-58 (2013) regarding thermometry with NV centers and F. Dole , H. Fedder, MW Doherty, T. Nöbauer, F. Rempp, G. Balasubramanian, T. Wolf, F.

Reinhard, LCL Hollenberg, F. Jeletzko, J. Wrachtup, "Electric-field sensing using single diamond spins", Nat. Phs. 7, 459-463 (2011) regarding the measurement of electric fields with NV centers and A. Albrecht, A. Retzker, M. Plenio, "Nanodiamond interferometry meets quantum gravity" arXiv: 1403.6038vl [quant-ph] 24 Mar 2014 regarding the measurement of gravitational fields with NV centers.

If necessary, the pump radiation (LB) is preferably prevented from exiting via radiation-opaque barriers (BA2) on the sides of the sensor element. These can be applied, for example, as opaque glue or the like by means of a dispenser.

Fig. 48

Another alternative placement option for the sensor element with the paramagnetic centers (NV1) is, for example, the inside of the housing cover (DE).

Fig. 49

FIG. 49 shows the test of a proposed sensor system. The test is preferably carried out before the assembly opening (MO) of the housing is closed with the housing cover (DE). The integrated circuit (IC) is preferably put into operation by contacting the housing and applying suitable patterns, which are temporal signal patterns for controlling the contacts of the sensor system, for example by means of an electrical test system. A first test radiation source (LED1), which is preferably an LED or a laser, emits test pump radiation (TLB) with a test pump radiation _wavelength (l _rit1r ) which is typically equal to the pump radiation _wavelength (l _rigir ) of the pump radiation _source (PLI), and with this irradiates the paramagnetic centers (NV1) in the material of the sensor element. This irradiation with test pump radiation (TLB) of the

_Pump radiation _wavelength (l _rirr ) excites the paramagnetic center (NV1) or the

paramagnetic centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1) in the material of the sensor element for emission of fluorescence radiation (FL) with fluorescence radiation wavelength ^ _fi ) - e.g. with a fluorescence radiation wavelength (lh) of l _{ί |} = 637hiti at NV centers. This fluorescence radiation (FL) can through a first

Test receiver (TD1), which is provided with a test filter (TF1), which for radiation with the

Fluorescence radiation wavelength (l ^) of the fluorescence radiation (FL) - for example 637nm at NV centers - is transparent and is preferred for radiation of the pump radiation _wavelength (l _rirr )

Pump radiation (LB) and the test pump radiation (TLB) is not transparent, can be received. The intensity (l _fl ) of the fluorescence radiation (FL) is recorded with the aid of the test receiver (TD1) and converted into a measured value. This measured value is compared with a nominal value by a test device (not shown). If the comparison is negative, the sensor system is faulty. In another test step, the pump radiation source (PLI) of the sensor system is caused by the integrated circuit (IC) on the basis of a command from the external test device to the integrated circuit (IC) to emit pump radiation (LB) of the pump radiation _wavelength (l _rGhr ). This emitted pump radiation (LB) partially falls on the paramagnetic centers (NV1) in the material of the sensor element. If necessary, an external mirror (EMI), which is preferably part of the test device, is provided for this. This stimulates the paramagnetic centers (NV1) in the material of the sensor element to emit the fluorescent radiation (FL). This fluorescence radiation (FL) can be detected by the first test receiver (TD1), which is provided with said test filter (TF1). The intensity (l _fl ) of the fluorescence radiation (FL) is determined with the help of this

Test receiver (TD1) recorded again and converted into a measured value. This measured value is compared with a second target value by a test device (not shown). If the comparison is negative, the system is faulty.

The pump radiation (LB) from the pump radiation source (PLI) can be detected by a second test receiver (TD2). The pump radiation (LB) is recorded with the aid of this test receiver (TD2) and converted into a measured value. This measured value is replaced by a not drawn

Test device compared with a third target value. If the comparison is negative, the tested sensor system is faulty. If the system is not defective, the mounting opening of the housing can be closed. If the tested sensor system is defective, it is discarded or reworked.

Fig. 50

FIG. 50 shows a basic process sequence for producing a sensor system. The proposed manufacturing process comprises the following steps, wherein the order of the steps can vary slightly, additional steps can be carried out and steps can be combined. A first step is to provide (1) a so-called pre-molded open-cavity housing with connections. This means that it is preferably a preformed housing that has a cavity (CAV) with a mounting opening (MO) into which the components are mounted. The housing is in the figures 34 in the plan and 35 in the

Sectional view shown from the side. The second step is the introduction (2) of a

Pump radiation source (PLI). The third step is the introduction (3) of an integrated circuit (IC) with a radiation receiver (PD1), which is preferably already wavelength-sensitive. That means it is preferred for radiation with the fluorescence radiation wavelength (lh) - e.g. 637nm for NV- Centers - the fluorescence radiation (FL) of a paramagnetic center (NV1) of the material of the sensor element and essentially sensitive to radiation with the pump radiation wavelength (l _r , _hr ) of the pump radiation (LB) of the pump radiation source (PLI) with which the paramagnetic center (NV1 ) is caused to emit the fluorescent radiation (FL), essentially not sensitive. This is followed by the step of electrically connecting (4) the integrated circuit (IC) and the connections (LF1, LF2, LF4, LF5, LF6) and the pump radiation source (PLI) for the pump radiation (LB). If necessary, additional components are placed in the housing and connected. A sensor element with a paramagnetic center (NV1) is introduced (5) in the material of the

Sensor element and the fastening (6) of the sensor element by means of a fastening means (Ge). These last two steps can also be carried out together. A further step is the production (7) of a means for directing the pump radiation (LB) and / or the

Fluorescence radiation (FL). This is, for example, the reflector (RE). The reflector (RE) can also very simply be the untreated side of the cover (DE) which points in the direction of the cavity (CAV). This top side of the cover (DE) can be coated, provided with an optical functional element, be microstructured and provided with a curvature that can be modulated, for example to optically connect the pump radiation source (PLI) with the paramagnetic center (NV1) or the paramagnetic centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1) in the preferably diamagnetic material (MPZ) of a substrate (D) of the sensor element and / or, for example, the paramagnetic center (NV1) or the paramagnetic centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1) in the preferably diamagnetic material (M PZ) of a substrate (D) of the sensor element with the radiation receiver (PD). The closing (8) of the mounting opening (MO) of the housing with the said cover (DE) completes the process in its basic form. The sequence is shown in principle in FIG. 50a, while steps five and 6 are carried out together in FIG. 50b.

Modifications of this process sequence, e.g. to mount and connect a separate radiation receiver (PD) and / or a compensation radiation source (PLK) are possible.

Fig. 51

The sequence of FIG. 50a is shown once again in FIG. 51a. Between the step of fastening (6) the sensor element by means of a fastening means (Ge) and the step of producing (7) a means for directing the pump radiation (LB) and / or fluorescence radiation (FL) a step for testing the system function (9) is added, in which a measured value is determined. This measured value is compared with a threshold value in a further step (10). If the comparison is positive (p), the known step of producing (7) a means for controlling the follows

Pump radiation (LB) and / or fluorescence radiation (FL). If the comparison is negative (n), this is rejected (11) or the system is reworked.

The sequence of FIG. 50a is shown once again in FIG. 51b. Between the step of fastening (6) the sensor element by means of a fastening means (Ge) and the step of producing (7) a means for directing the pump radiation (LB) and / or fluorescence radiation (FL) is a step (12) for applying the first Adhesive (GL1) on the integrated microelectronic circuit (IC) and a step (13) for placing the first filter (F1) in the first adhesive (GL1) is provided. These steps are necessary if the receiver is not essentially selective for radiation with the fluorescence wavelength (l ^) of the fluorescence radiation (FL) of the paramagnetic center of the material of the sensor element versus radiation with the

_Pump radiation _wavelength (l _rigir ) of the pump radiation (LB) of the pump radiation source (PLI).

Further steps are possible. The steps can also be combined with one another if this makes sense. The order may differ if it makes sense. It is also possible to carry out more than one test step (10).

A test step (9) can, for example, emit fluorescence radiation (FL) through the paramagnetic center (NV1) of the material of the sensor element by means of irradiation

Check pump radiation (LB).

A test step (9) can, for example, check the emission of fluorescence radiation (FL) by the paramagnetic center (NV1) of the material of the sensor element by causing the pump radiation source (LED1) to emit pump radiation (LB), in which case the pump radiation source (LB) PLI) emitted pump radiation (LB) can be checked.

In test step (9), for example, the emission of fluorescence radiation (FL) through the paramagnetic center (NV1) of the material of the sensor element by irradiation with

Pump radiation (LB) can be checked as a function of an externally generated magnetic flux B. This is particularly useful for calibration purposes. The then possibly determined

Calibration data can be stored in a memory of the microelectronic circuit (IC) will. Such a test and such a calibration are, of course, after the

Cover (DE) on the housing particularly useful.

Fig. 52

FIG. 52 shows a sensor system corresponding to FIG. 46 without the first filter (F1) and without the first adhesive (GL1), for example for operation with a system according to FIGS. 20 to 21 or 25.

The system of FIG. 52 is thus a sensor system and / or

quantum technological system, the sensor system and / or quantum technological system having one or more paramagnetic centers (NV1) in the material of a sensor element and / or quantum technological device element that is part of the sensor system and / or

quantum technological system is, comprises and wherein the sensor system and / or

quantum technological system comprises a radiation source (PLI) for pump radiation (LB). The pump radiation (LB) emitted by the pump radiation source (PLI) at the first times (TI) causes the paramagnetic center or centers (NV1) to emit fluorescence radiation (FL). This is phase shifted by a fluorescence phase shift time (ATFL) with respect to the

Pump radiation (LB). The sensor system and / or quantum technology system therefore includes means (PD1, A1, Ml, TP, M2, A2, G, Ml ', TR', M2 '), for example those of FIG. 12, which are used at second times (T2) are different from the first times (TI), the fluorescence radiation (FL) of the paramagnetic center or centers (NV1) are detected in order to infer the phase shift in the form of the value of the fluorescence phase shift time (ATFL) and a value in the form of a sensor output signal (out) that corresponds to or depends on this value. For example, the pump radiation (LB) can be modulated by a PWM signal as a transmission signal (S5) with an exemplary duty cycle of 50%. The orthogonal reference signal (S5 ¹ ) is then, for example, also preferably a PWM signal with a 50% duty cycle, which is preferably 90 ° relative to the transmission signal (S5) or the alternating component (s5w) of the transmission signal (S5)

is phase shifted when the levels of the transmission signal (S5) and the orthogonal reference signal (S5 ¹ ) are applied symmetrically around 0, so for example jump back and forth between 1 and -1. If the levels with 1 and 0 are applied, the orthogonal reference signal (S5 ¹ ) is preferably shifted 180 ° relative to the transmission signal (S5), that is to say inverted relative to the transmission signal (S5). Other

Combinations of orthogonality (eg different frequencies) are conceivable. In the case of the level definition with 0 and 1, the operation of LEDs as a pump radiation source (PLI) is special advantageous. The additional sensor output signal (out ¹ ) formed, for example, in accordance with FIG. 17 then represents a value for the fluorescence radiation (FL) of the paramagnetic center (NV1) at times when no pump radiation (LB) is emitted. These are typically the second times (T2). Since the time course of the afterglow of the paramagnetic centers (NV1) is known and since the phase shift is thus predetermined, this value, which is represented by the additional sensor output signal (out ¹ ), then depends on the fluorescence radiation (FL) of the paramagnetic center (NV1) and thus, for example, of this

Fluorescence radiation (FL) of the paramagnetic center (NV1) influencing magnetic flux B at the location of the paramagnetic center (NV1). The advantage is that in this way only three components have to be installed in the housing.

Fig. 53

FIG. 53 shows the exemplary housing with the sensor system from FIG. 52 with shielding (MAS) and a separate radiation receiver (PD). The shielding (MAS) is preferably made of electrically conductive and / or soft magnetic material. Fig. 54

FIG. 54 shows the exemplary housing with the sensor system from FIG. 34 with an additional line (LTG) in a plan view before assembly. In the example arbitrarily discussed here, the electrical current is to be measured by determining a current value for this current in the line (LTG); Fig. 55

FIG. 55 shows the exemplary housing with the sensor system from FIG. 52 with the additional line (LTG) compared to FIG. 52, the current of which is to be measured;

Fig. 56

FIG. 56 shows an exemplary lead frame for the exemplary housing of FIG. 46 in a top view. Mounting surfaces are preferably incorporated into the leadframe. These are preferably made of metal. This metal is preferably coated in order to ensure better adhesion of the bond wires. These mounting surfaces are referred to below as the lead frame surface. The first leadframe area (LF1), the fifth leadframe area (LF5), the sixth leadframe area (LF6) and the fourth leadframe area (LF4) will later form the contacts.

The second leadframe area (LF2) and the third leadframe area (LF3) are later used to mount the integrated circuit (IC) and the pump radiation source (PLI) for the pump radiation (LB) Fig. 57

FIG. 57 shows the exemplary lead frame of FIG. 56 in cross section. The framework of the

For the sake of simplicity, leadframes are not drawn here and below.

Figu re n 58 to 69

Figures 58 to 69 describe an exemplary assembly process for the rest

proposed system.

Fig. 58

In FIG. 58, a third adhesive (GL3) is first applied to the third lead frame area (LF3), for example with the aid of a dispenser. With the aid of a dispenser, a second adhesive (GL2) is applied to the second lead frame surface (LF2). Fig. 59

In Figure 59, in the third adhesive (GL3) on the third lead frame area (LF3) the

Pump radiation source (PLI) set and thus attached to the third lead frame surface (LF3). The third adhesive (GL3) is preferably electrically and thermally conductive. In this case, there is an electrical and thermal connection between the pump radiation source (PLI) and the third lead frame area (LF3). The third leadframe area (LF3) is preferably a so-called exposed die pad, which allows thermal contacting of the third leadframe area from the underside of the bottom (BO) of the housing and thus better heat dissipation and thus better heat dissipation

Temperature control for the pump radiation source (PLI) allowed. The outer surface of the third lead frame surface (LF3), which is thus exposed to the outside, is preferably thermally coupled to a heat sink, e.g. by means of soldering or gluing with a thermally conductive adhesive. As a result of this measure, the pump radiation source (PLI) is coupled to this heat sink, for example a heat sink. A temperature sensor preferably detects the temperature of the

Pump radiation source (PLI). A controller preferably regulates with the help of a heating element that the Heat sink counteracts the temperature of the pump radiation source (PLI) as a function of the value of the temperature detected by the temperature sensor so that it is essentially stable except for control errors. If necessary, regulation of the cooling can also be considered.

The pump radiation source (PLI) is therefore preferably operated in a temperature-stabilized manner.

Fig. 60

In FIG. 60, an integrated circuit (IC) is placed in the second adhesive (GL2) and thus attached to the second lead frame area (LF2). The second adhesive (GL2) is preferably electrically conductive.

In this case, an electrical connection is created between the back of the integrated circuit (IC) and the wide lead frame area (LF2). In the example, the integrated circuit (IC) comprises the radiation receiver (PD1) and the first coil (LI), which in the example in FIG. 60 surrounds the radiation receiver (PD1). However, it can also be a single line (LH).

The first coil (LI) can, for example, also on or in a substrate (D) of the

Sensor element be manufactured. It can also be one or more, in particular, straight lines on or in the substrate or the sensor element. This first coil (LI) can be used, for example, as a compensation coil (LC). It is preferably a flat coil in the metallization stack of the integrated circuit (IC). To the technical teaching of PCT / DE 2020/100 430, which is unpublished at the time of registration of this document, whose technical teaching in combination with the technical teaching of this document is a full part of this disclosure, insofar as the legal system of the country in which the nationalization the international registration document presented here, this allows.

Fig. 61

This step is necessary if the first filter (F1) is not already part of the integrated circuit (IC) and is implemented, for example, as a metal-optical filter in the metallization stack of the integrated circuit and if the need for the first filter (F1) is not made by other measures, such as For example, a measurement of the afterglow of the fluorescence radiation (FL) at times when the pump radiation (LB) has been switched off and / or has faded is obsolete. In FIG. 61, a first adhesive (GL1) is applied to the surface of the integrated circuit (IC) in the area of the radiation receiver (PD1). The first adhesive (GL1) is preferably essentially transparent to the fluorescence radiation (FL) of the paramagnetic centers (NV1) in the material of the sensor element.

Instead of a first adhesive (GL1), other functionally equivalent ones can of course also be used Fastening methods for the first filter (F1) described below in FIG. 62 can be used.

Fig. 62

This step is necessary if the first filter (F1) is not already part of the integrated circuit (IC) and is implemented, for example, as a metal-optical filter in the metallization stack of the integrated circuit and if the need for the first filter (F1) is not made by other measures, such as for example a measurement of the afterglow of the fluorescence radiation (FL) for a

Fluorescence phase shift time (ATFL) is obsolete at times when the pump radiation (LB) has been switched off and / or has decayed. In FIG. 62, the first filter (F1) is placed in the first adhesive (GL1). The first filter (F1) is preferably essentially transparent to radiation with the fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) in the material of the sensor element. The first filter (F1) is preferably essentially not transparent to radiation with the pump radiation _wavelength (l _rGhr ) of the pump radiation (LB) of the pump radiation source (PLI). The first filter (F1) and the first adhesive (GL1) can be omitted if the radiation receiver (PD1) is designed from the outset in such a way that it is suitable for radiation with the fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) in the The material of the sensor element is essentially sensitive and is not sensitive to radiation of the pump radiation _wavelength (I _rigir ) of the pump radiation (LB) of the pump radiation source (PLI). In this respect, the common functionality of receiver (PD1), first adhesive (GL1) and first filter (Fl) can also be viewed as a radiation receiver (PD), which is responsible for radiation with the fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) of the paramagnetic centers ( NV1) in the material of the sensor element is essentially sensitive and for radiation with the pump radiation _wavelength (l _rGhr ) of the pump radiation (LB)

Pump radiation source (PLI) is not sensitive.

Fig. 63

In FIG. 63, the sensor element with the paramagnetic center or centers (NV1) is placed on the first filter (F1). This step can also take place together with the following step in FIG. The sensor element comprises the paramagnetic center or centers (NV1) in the material of the sensor element. Fig. 64

In FIG. 64, the fastening means (Ge) for fastening the sensor element with the paramagnetic centers (NV1) in the material of the sensor element is introduced on the first filter (F1). It is preferably gelatin. The gelatin with the

Sensor elements mixed and applied together. In the disclosure presented here, express reference is made to DE 10 2019 114 032.3 and to PCT / DE 2020/100430, which was unpublished at the time of registration, the disclosure content of which in combination with the disclosure content of this document is a full part of this disclosure, insofar as the legal system of the country in which the international application document presented here is nationalized allows this.

Fig. 65

In FIG. 65, further electrical connections are made by bonding wires. The first bonding wire (BDI), the second bonding wire (BD2), and the third bonding wire (BD3) are only examples here.

Fig. 66

In FIG. 66, a transparent casting aid (GLT) is applied to the partial device that has been manufactured so far. It is preferable to ensure that the surface of this casting aid (GLT) assumes a predetermined quality and shape. This is preferably achieved by adjusting the surface tension. The casting aid (GLT) is preferably transparent for radiation with the pump radiation _wavelength (l _rGhr ) of the pump radiation (LB) of the pump radiation source (PLI) and / or for radiation with the fluorescence wavelength (l ^) of the fluorescence radiation (FL) of the paramagnetic centers (NV1 ) of the sensor element.

Fig. 67

In FIG. 67, the previous partial construction of FIG. 66 is reshaped with a potting agent, for example duroplast. The casting aid (GLT) then automatically forms the reflector (RE) on the surface. If necessary, it makes sense, with the aid of a shadow mask, to give the casting aid a reflective coating with an optically reflective layer before it is encapsulated with the casting agent. Fig. 68

After all the materials have hardened and the remaining processing (e.g. de-flashing), the system is ready for use. The pump radiation (LB) emitted by the pump radiation source (PLI) is, in one form at the interface between the potting aid (GLT) and the potting agent, preferably into the parametric center or centers (NV1) in the preferably diamagnetic material (MPZ) of a substrate (D ) reflected or scattered in the sensor element. For example, the fluorescent radiation (LB) emitted by the paramagnetic center or centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) at the interface between the potting aid (GLT) and the potting agent can preferably be fed into the radiation detector (PD ) be reflected or scattered. In the sense of this disclosure, the interface thus represents an optical functional element that, if necessary, the pump radiation source (PLI) of the pump radiation (LB) with the parametric center or centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) of the sensor element and possibly the parametric center or centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) by means of the fluorescence radiation (FL) emitted by them with the radiation receiver (PD). This optical functional element can also be used for the

Compensation radiation source (PLK) by means of the compensation radiation (KS) with the

To couple the radiation receiver (PD) or the compensation radiation source (PLK) by means of the compensation radiation (KS) with a reference element with one or more reference centers (NV2) and / or a group or groups (NVC2) of reference centers (NV2) and by means of the compensation fluorescence radiation ( KFL) the reference center (NV2) or the

Reference centers (NV2) and / or the group or groups (NVC2) of reference centers (NV2) to couple with the radiation receiver (PD).

Fig. 69

FIG. 69 shows a further method for producing a sensor system and / or

quantum technological system. It covers the steps

• Provision (14) of a lead frame with connections and

• Mount (15) a pump radiation source (PLI) on the leadframe and

• Mount (16) an integrated circuit (IC) with a radiation receiver (PD) on the leadframe and • Electrical connection (17) of the integrated circuit (IC) and the connections and the pump radiation source (PLI) and

• Mount (18) a sensor element and / or quantum technology

Device element with one or more paramagnetic centers (NV1) in the material of the sensor element and / or quantum technological device element and

• Attaching (19) the sensor element and / or quantum technology

Device element by means of a fastening means (Ge) and

• Covering (20) the sub-device with a transparent casting aid (GLT) and

• Potting (21) the part device with a potting compound.

The pump radiation source (PLI) is provided to emit the pump radiation (LB).

The paramagnetic center or centers (NV1) in the material of the sensor element and / or quantum technological device element emits the fluorescence radiation (FL) when irradiated with this pump radiation (LB). The casting aid (GLT) is preferably essentially transparent for the pump radiation (LB) and / or for the fluorescent radiation (FL).

The steps of mounting (18) a sensor element and / or quantum technology

Device elements with one or more paramagnetic centers (NV1) in the material of the sensor element and / or quantum technological device element and the fastening (19) of the sensor element and / or quantum technological device element by means of a fastening means (Ge) are preferably carried out as one step.

Fig. 70

FIG. 70 shows an exemplary combination of several flat coils, as they are preferably used in the integrated circuit (IC) for generating magnetic fields with multipole moments and / or for modifying the direction of the magnetic flux B at the location of the paramagnetic center or centers (NV1) or the group or the group (NVC) of paramagnetic centers (NV1), for example as a compensation coil (LC). The illustration shows in a simplified and schematic manner the exemplary arrangement of several coils in a plan view. This exemplary

Combination of flat coils comprises a first coil (LI) designed as a flat coil. This is arranged symmetrically around the center point and therefore does not generate a multipole moment with respect to one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NVC), the paramagnetic centers (NV1) preferably NV centers are in diamond. In contrast to this, three pairs of flat coils ([L2, L5], [L3, L6], [L4, L7]) are arranged symmetrically around the center with the paramagnetic center (NV1) in this example. Instead of three pairs, other numbers of pairs can be used instead of 3, as in this example.

A second flat coil (L2) and a fifth flat coil (L5) form a first coil pair.

The second flat coil (L2) preferably has the same amount of current flowing through it as the fifth flat coil (L5). The signs of the currents in these two coils are preferably different, so that the direction of the magnetic flux B changes at the location of the paramagnetic center or centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1).

A third flat coil (L3) forms a second pair of coils with a sixth flat coil (L6).

The third flat coil (L3) preferably has the same amount of current flowing through it as the sixth flat coil (L6). The signs of the currents in these two coils are preferably different, so that the direction of the magnetic flux B changes at the location of the paramagnetic center or centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1).

A fourth flat coil (L4) and a seventh flat coil (L7) form a third pair of coils.

The fourth flat coil (L4) preferably has the same amount of current flowing through it as the seventh flat coil (L7). The signs of the currents in these two coils are preferably different, so that the direction of the magnetic flux B changes at the location of the paramagnetic center or centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1).

FIG. 70a shows the coil arrangement without a sensor element with one or more

paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1).

FIG. 70b shows the coil arrangement with a sensor element with one or more

paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1). This then results in a sensor system and / or quantum technological system, also referred to in the following simply as a sensor system, in which the sensor system comprises a sensor element and / or quantum technological device element and in which the sensor system has one or more paramagnetic centers (NV1) or a group or comprises several groups (NVC) of paramagnetic centers (NV1) in the preferably diamagnetic material (MPZ) of a substrate (D) of this sensor element and / or quantum technological device element. The sensor system again has a pump radiation source (PLI) for pump radiation (LB). The sensor system comprises a radiation receiver (PD1). The pump radiation (LB) has a pump radiation _wavelength (l _rigir ), which again in the case of NV centers as paramagnetic centers (NV1) is preferably green and is preferably in a wavelength range from 500 nm to 600 nm, for example 520 nm. The pump radiation (LB) causes the paramagnetic center or centers (NV1) or the group or groups of paramagnetic centers (NV1) to emit fluorescence radiation (FL) with a fluorescence radiation wavelength (Ä _fl ), which is preferred in the case of NV centers in Diamond as paramagnetic centers (NV1), is red and is typically about 637nm. The radiation _receiver (PD) is again sensitive to radiation with a wavelength of the fluorescence radiation wavelength (l _rGTΐr ) - for example 637 nm at NV centers. The

Pump radiation source (PLI) generates the pump radiation (LB). The sensor system is designed so that the pump radiation (LB) falls on the paramagnetic center (NV1). The sensor system is designed in such a way that the fluorescence radiation (FL) of the paramagnetic center or centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) irradiates the radiation receiver (PD). The sensor system now also has means, in particular the said coil arrangement (LI, 12, 13, 14, L5), which is suitable for a change in the magnetic flux density B in amplitude and direction at the location of the paramagnetic center or centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1) in the manner. This change in the magnetic flux density B in amplitude and direction at the location of the paramagnetic center or centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1) then influences the intensity (l _fl ) of the fluorescence radiation (FL) of the or the paramagnetic centers (NV1) and / or the group or groups (NVC) of paramagnetic centers (NV1). For this purpose, an integrated circuit (IC) with a first coil (LI) and with at least one further pair of coils ([L2, L5], [L3, L6], [L4, L7]) and / or one further coil is then preferred (L2, L3, L4, L5, L6, L7) are used. The first coil (LI) and / or the at least one further coil pair ([L2, L5], [L3, L6], [L4, L7]) and / or the further coil (L2, L3, L4, L5, L6, L7) are preferably implemented in the metallization stack of the integrated circuit (IC) or as part of the lead frame or a printed circuit near the housing. The first coil (LI) and / or the at least one further coil pair ([L2, L5], [L3, L6], [L4, L7]) and / or the further coil (L2, L3, L4, L5, L6, L7) are preferably suitable and provided for influencing the generation of fluorescence radiation (FL) of the paramagnetic center (NV1) in the center of the arrangement, for example by means of the magnetic flux densities B generated by their respective coil current. The coil arrangement preferably surrounds a light-sensitive sub-device of the integrated circuit (IC), for example a radiation receiver (PD), so that the radiation can fall unhindered through the coil arrangement onto the light-sensitive component, the radiation receiver (PD).

Fig. 71

Figure 71 shows a preferred, exemplary embodiment of an exemplary sensor element with diamagnetic material (MPZ) with, in this example, several groups (NVC) (English: clusters) each with one or more paramagnetic centers (NV1) and / or preferably with one or more groups (NVC) paramagnetic center (NV1), each group (NVC) of paramagnetic centers (NV1) and, previously, preferably each such group comprising a plurality of paramagnetic centers (NV1). The paramagnetic centers (NV1) of such a group (NVC) of paramagnetic centers (NV1) determine the center of gravity of such a group (NVC) of paramagnetic centers (NV1). The sensor element preferably has a first surface (OFL1) and a second surface (OFL2). For example, the sensor element can be a diamond plate with such a first surface (OF1) and such a second surface (OF2).

The first surface (OFL1) and the second surface (OFL2) preferably form an optical resonator. In the example in FIG. 71, the pump radiation (LB) from the pump radiation source (PLI) falls at an exemplary perpendicular angle to the first surface (OF1) as an angle of incidence (0 _e ) on this first surface (OF1) of the sensor element. Other angles are possible. The angle of incidence 0 _e between the surface perpendicular (üi) of the first surface (OFL1) and the pointing vector of the pump radiation (LB) is _preferably selected so that the intensity (l _pmp ) of the pump radiation (LB) is at at least one point within the sensor element becomes maximum. That means that

Angle of incidence 0 _e is preferably set so that a maximum of pump radiation power (I _pmp ) of the pump radiation (LB) into the resonator from the first surface (OFL1) and the second surface (OFL2) occurs, or in other words the angle of incidence 0 _e is preferably set so that a maximum of pump radiation power of the pump radiation (LB) from the pump radiation source (PLI) enters a substrate (D) within the sensor element. For example, the first surface (OFL1) and the second surface (OFL2) can be two plane-parallel surfaces of the sensor element. The first surface (OFL1) and the second surface (OFL2) then form a Fabry-Perot resonator. Within the resonator, the intensity (I _pmp ) of the pump radiation (LB) is not the same everywhere in _{terms of amount,} particularly as a result of constructive and destructive interference. Within the resonator, the pump radiation (LB) forms a standing wave that has bulges and nodes, i.e. points of constructive and destructive interference. The intensity (l _pmp ) of this standing wave is essentially zero at the nodes and maximum at the bellies. The groups (NVC) of paramagnetic centers (NV1) are preferably placed at the positions of these _{bulges, i.e.} the maxima of the structural interference of the amount (l _pmp ) of the pump radiation (LB) within a substrate (D) of the sensor element. Preferably, no paramagnetic centers (NV1) are placed at the nodes of the standing wave of the pump radiation (LB) within the resonator. This has the advantage that the contrast (KT) (see also FIG. 28), which does not depend linearly on the intensity (l _pmp ) of the pump radiation (LB) and the density of the paramagnetic centers (NV1), is maximized, since preferably only in In the areas of maximum intensity (l _pmp ) of the pump radiation (LB) there is an increased density of paramagnetic centers (NV1), while in the areas of low intensity (l _pmp ) of the pump radiation (LB) there are as few or as few paramagnetic centers (NV1) as possible available. In the example in FIG. 71, 5 groups (NVC) of paramagnetic centers (NV1) are provided, each of which is at a distance of l _rpir / 2 of the pump radiation _wavelength (l _rirr ) in the direction of the pointing vector of the pump radiation (LB). The reason for this is that the maximum of the standing wave of the pump radiation (LB) within the resonator of the first surface (OFL1) and the second surface (OFL2) is at a distance of l _rpir / 2 at a perpendicular incidence of the

Have pump radiation (LB) with 0 _e = 0 °. Here l _{rpir is} the pump radiation _wavelength (l _rirr ) of the pump radiation (LB).

Preferably, the extension (d) of a group (NVC) of paramagnetic centers (NV1) perpendicular to the pointing vector of the incident pump radiation (LB) within a sensor element is designed in such a way that all or essentially all paramagnetic centers (NV1) of such a group ( NVC) paramagnetic centers (NV1) a maximum intensity (l _pmp ) of the pump radiation (LB) received. This extension (d) of a group (NVC) of paramagnetic centers (NV1) perpendicular to the pointing vector of the incident pump radiation (LB) within a sensor element is therefore preferably less than h * l _{r [gir} / 2 of the pump radiation _wavelength (l _rirr ) with n as a whole positive number. Preferably d ^ _pmp / 2 and / or better d ^ _pmp / 4 and / or better d ^ _pmp / 10 and / or better d ^ _pmp / 20 and / or better d ^ _pmp / 40 and / or better d ^ _pmp / 100. The focus of the group (NVC) of the paramagnetic centers (NV1) then preferably lies as precisely as possible at the point of the maximum intensity (I _pmp ) of the standing wave of the pump radiation (LB) within the sensor element. This has the advantage that the contrast (KT) (see FIG. 28) is maximized, since essentially only areas with a high density of paramagnetic centers (NV1), which are typically the said groups (NVC) of paramagnetic centers (NV1) Areas of high intensity (l _pmp ) of the standing wave of the pump radiation (LB) contribute to the fluorescence radiation (FL).

In the example in FIG. 71, the resonator is formed by the first surface (OFL1) of the

Sensor element and the second surface (OFL2) of the sensor element formed. Both the pump radiation (LB) and the fluorescence radiation (FL) preferably form a Gaussian beam within the resonator. We refer to J.R. Leger, D. Chen, G. Mowry, "Design and performance of diffractive optics for custom laser resonators," PPLIED OPTICS @ Vol. 34, No. 14 @ 10 May 1995, p. 2498-2509

In the example in FIG. 71, on the first surface (OFL1) of the sensor element there is a front-side antireflection layer as a front matching layer (ASv) for matching the

Reflection properties of the first surface (OFL1) on the pump radiation _wavelength (l _rirr ) of the pump radiation (LB) and the fluorescence radiation _wavelength (lh) of the fluorescence radiation (FL). The front-side matching layer (ASv) can be a vapor-deposited or otherwise deposited layer on the sensor element. A structuring of the first surface (OFL1) by means of webs and grooves is also suitable as a front-side matching layer (ASv), so that you get an average refractive index of this front-side matching layer (ASv) that corresponds to the

Refractive index in the first medium (ME19 above the front-side matching layer (ASv) and from the refractive index in the second medium (M E2) below the front-side matching layer (ASv). This microstructuring of the first surface (OFL1) allows the transmission and reflection properties of the first surface (OFL1) can be adjusted by means of diffractive optics so that the contrast (KT) of the intensity (l _fl ) or intensities (l _{f |} ) of the

Fluorescence radiation (FL) as a function of the magnetic flux density B at the location of the paramagnetic center (NV1) or the paramagnetic centers (NV1) and / or the or groups (NVC) of paramagnetic centers and depending on the intensity (l _pmp ) of the pump radiation (LB) is or are maximized. Such means of diffractive optics can include: lenses, mirrors, photonic crystals, grids and sub-wavelength grids, holograms, Fresnel lenses, prisms, resonators, Morie structures, lenses with a focal length that depends on the wavelength of the transmitted light, grids and arrangements of several such functional elements of diffractive optics, coupling elements between the substrate (D) and an overlying waveguide (LWL), for example for coupling out pump radiation (LB) from the waveguide (LWL) and for coupling this coupled out pump radiation (LB) into the preferably diamagnetic material (MPZ) of a substrate (D) of the sensor element and / or for coupling out fluorescent radiation (FL) from one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1) from the

preferably diamagnetic material (MPZ) of a substrate (D) of the sensor element in the

Waveguide (LWL). To B. Kress, P. Meyrueis, "Digital Diffractive Optics" J. Wiley & Sons, London, 2000 and B. Kress, P. Meyrueis, "Applied Digital Diffractive Optics", J. Wiley & Sons, London, 2009 is pointed out in this context.

In the example of FIG. 71, grooves with a width (NBR) of these grooves and webs with a width (SBR) of these webs are used for this microstructuring. The width (NBR) of these grooves is preferably smaller than a pump radiation _wavelength (l _rirr ) and / or better smaller than half a pump radiation _wavelength (l _rirr ) and / or even better smaller than a quarter

_Pump radiation _wavelength (l _rirr ). The width (SBR) of these webs is preferably smaller than a pump radiation _wavelength (l _rirr ) and / or better smaller than half a length

_Pump radiation _wavelength (l _rirr ) and / or even better less than a quarter

_Pump radiation _wavelength (l _rirr ).

In the example in FIG. 71, there is a rear-side matching layer (ASr) on the second surface (OFL2) of the sensor element for matching the reflection properties of the second surface (OFL2) to the pump radiation _wavelength ( _Irirr ) of the pump radiation (LB) and the

Fluorescence radiation wavelength (lh) of the fluorescence radiation (FL). At the back

Adaptation layer (ASr) can be a vapor-deposited or otherwise deposited layer on the sensor element. A structuring of the second surface (OFL2) by webs is also suitable as the rear adaptation layer (ASr), as is the case with the front adaptation layer (ASv) and grooves, so that a mean refractive index of this rear-side matching layer (ASr) results from the refractive index in the second medium (ME2) above the rear-side matching layer (ASr) and from the refractive index in the third medium (ME3) below the rear-side

Adaptation layer (ASr) deviates. This microstructuring of the second surface (OFL2) allows the reflection properties of the second surface (OFL2) to be adjusted so that the contrast (KT) of the intensity (l _{f |} ) of the fluorescent radiation (FL) is dependent on the magnetic flux density B at the location of the paramagnetic centers (NV1) and depending on the intensity (l _pmp ) of the pump radiation (LB) is maximized. In the example of FIG. 71, grooves with a width (NBR) of these grooves and webs with a width (SBR) of these webs are used for this microstructuring. Preferably, the width (NBR) of these grooves is smaller than one

_Pump radiation _wavelength (l _rirr ) and / or better less than half a

_Pump radiation _wavelength (l _rirr ) and / or even better less than a quarter

_Pump radiation _wavelength (l _rirr ) used. The width (SBR) of these webs is preferably smaller than a pump radiation _wavelength (l _rirr ) and / or better smaller than half a length

_Pump radiation _wavelength (l _rirr ) and / or even better less than a quarter

_Pump radiation _wavelength (l _rirr ). What is written about the front-side matching layer (ASv) with regard to the diffractive optics and its means also applies in a typically similar manner to the rear-side matching layer (ASr). The corresponding means of diffractive optics can therefore again be among others: lenses, mirrors, photonic crystals, optical filters, gratings and sub-wavelength gratings, holograms, Fresnel lenses, prisms, resonators, Morie structures, lenses with one of the wavelength the focal length depending on the transmitted light, grating and arrangements of several such functional elements of diffractive optics, coupling elements between the substrate (D) and an overlying waveguide (LWL) for example

Decoupling of pump radiation (LB) from the waveguide (LWL) and for coupling this decoupled pump radiation (LB) into the preferably diamagnetic material (MPZ) of a substrate (D) of the sensor element and / or for coupling out fluorescent radiation (FL) of one or more paramagnetic Centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1) from the preferably diamagnetic material (M PZ) of a substrate (D) of the sensor element in the waveguide (LWL). To B. Kress, P. Meyrueis, "Digital Diffractive Optics" J. Wiley & Sons, London, 2000 and B. Kress, P. Meyrueis, "Applied Digital Diffractive Optics", J. Wiley & Sons, London, 2009 is pointed out in this context. The reflective properties of the front matching layer (ASv) typically differ from the reflective properties of the rear matching layer (ASr).

For example, it may be desired that the second surface (OFL2) reflects all the pump radiation (LB) and that the first surface (OFL1) hits the first surface (OFL1) again in the direction out of the sensor element by 95% of the pump radiation (LB) is reflected back.

The fluorescence radiation (FL) has a fluorescence radiation _wavelength (lh) which typically deviates from the pump radiation _wavelength (l _rigir ) of the pump radiation (LB) and is typically longer-wave. In the example, it therefore preferably emerges from the sensor element at a second angle q ₂ . The radiation receiver (PD) should therefore preferably be placed in this direction.

Due to the different reflection properties of the first surface (OFL1) and the second surface (OFL2), different phase jumps typically occur on these surfaces. This is indicated schematically by the different distances between the group (NVC) of paramagnetic centers (NV1) closest to one of these two surfaces and the relevant surface (OFL1, OFL2).

For the optimal arrangement of the groups (NVC) of the paramagnetic centers (NV1) and to determine the optimal properties of the front matching layer (ASv) and the rear matching layer (ASr), a simulation, for example an FDTD simulation, and careful

To carry out a calculation, the parameters of which are essentially determined by the respective application.

In the example in FIG. 71, it is assumed that the sensor element is attached to a holder (HA). If the second surface (OFL2) is designed to be totally reflective for the pump radiation (LB), there is no interaction between the holder (HA) and the pump radiation (LB). In the example in FIG. 71, the pump radiation (LB) is reflected back and forth several times between the first surface (OFL1) and the second surface (OFL2) before it

The sensor element leaves the first surface (OFL2) at an angle of reflection (0 _a ) to the surface normal (ü) of the first surface (OFL1) or is absorbed within the sensor element or is converted into fluorescence radiation (FL) within the sensor element by paramagnetic centers (NV1) . Of course, it is conceivable to design the device so that the exit of the Fluorescence radiation (FL) instead of the first surface (OFL1) takes place over the second surface (OFL2) at an angle of reflection (0 _a ) to the surface normal (Ü) of the second surface (OFL2), with the front matching layer (ASv) and the rear Adaptation layer (ASr) must be designed differently.

The influence of interferometric structures is from the text James L. Webb, Joshua D. Clement,

Luca Troise, Sepehr Ahmadi, Gustav Juhl Johansen, Alexander Flucka and Ulrik L. Andersen,

"Nanotesla sensitivity magnetic field sensing using a compact diamond nitrogen-vacancy

magnetometer ", Appl. Phys. Lett. 114, 231103 (2019), https://doi.Org/10.1063/l.5095241 for OFDM the measurement of individual NV centers with microwaves is known. Such control with microwave signals is not for groups In particular, this is not known for groups (NVC) of NV centers, which then typically also show the features of FID-NV diamond used here. The use of areas of high density at paramagnetic centers ( NV1), which are spatially limited and placed at predetermined points in the sensor element and the simultaneous use of microstructures to adapt the jump in the electromagnetic wave resistance on the surfaces as well as the direction-optimized coupling of the pump radiation (LB), which with a pointing vector from the direction of a Angle of incidence (0 _e ) relative to the surface normal (üi) to a surface (OFL1) is irradiated, and which may also be directed gsoptimierte decoupling of the fluorescence radiation (FL) corresponding to an angle of reflection (0 _a ) of the fluorescence radiation (FL), which with a pointing vector from the direction of an angle of reflection (0 _a ) with respect to the surface normal Cüi, Ü) to a surface (OFL1, OFL2) Leaves substrate (D) within the sensor element. In the production of the matching layer, methods of thin-film technology and / or methods of diffractive optics are preferably used. In this context we refer to the books B. Kress, P. Meyrueis, "Digital Diffractive Optics" J. Wiley & Sons, London, 2000 and B. Kress, P.

Meyrueis, "Applied Digital Diffractive Optics", J. Wiley & Sons, London, 2009, whose technical teaching in combination with the technical teaching of this document and the technical teaching of the cited documents form an integral part of this disclosure, insofar as the legal system of the country in nationalization of the international application document presented here allows this. The structuring of the surfaces (OFL1, OFL2) does not necessarily have to be homogeneous. This structuring of the web width (SBR) and / or groove width (NBR) and / or web height or

Groove depth can be a function of the coordinate on the respective surface (OFL1, OFL2), where different surfaces (OFL1, OFL2) can be modulated differently. No structuring of a surface (OFL1, OFL2) is also a form of modulation. It is proposed that this structuring increase the intensity (I _pmp ) of the pump radiation (FL) at the location or locations of the paramagnetic center (NV1) and / or the group (NVC) and / or the groups (NVC) of paramagnetic centers (NV1) to bring about. For example, it is conceivable to design the matching layers (ASv, ASr) as Fresnel lenses and / or arrays of Fresnel lenses so that, for example, one or more paramagnetic centers (NV1) and / or a group in the focus of each of these Fresnel lenses (NVC) or several groups (NVC) of paramagnetic centers (NV1).

Fig. 72

In the example of FIG. 72, the paramagnetic centers (NV1) which are the relevant

Generate fluorescent radiation (FL), realized in the same material as the

Pump radiation source (PLI). From DE 4 322 830 A1, for example, a diode structure made of Dimant is known, in which H3 centers in diamond in the green area can be excited to glow. Such suggestions are also known from B. Burchard "Electronic and Optoelectronic Components and Diamond-Based Component Structures", dissertation, Hagen October 1994. Such H3 centers as centers (PZ) within the preferably diamagnetic material (MPZ) of a substrate (D) within the sensor element can be used for the excitation of the

Fluorescence radiation (FL) of one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1) are used, in which case the preferably diamagnetic material (MPZ) of the preferably common substrate (D) within the sensor element as an optical functional element, here an optical waveguide, for the optical coupling of the paramagnetic center or centers (NV1) or the group (NVC) or groups (NVC) of paramagnetic centers (NV1) with the center or centers (PZ) or the group or groups (PZC) of centers (PZ) for the emission of the pump radiation (LB) serves as pump radiation sources (PLI).

It is also conceivable to directly influence and / or excite the paramagnetic centers by a current flow. Such a current flow can be brought about by means of ohmic contacts, that is to say ohmic, or capacitively or inductively by means of electrodes.

Such a method then comprises the steps Generating an alternating component (S5w) of a transmission signal (S5) by a generator (G);

Generating a current flow in a paramagnetic (NV1) sensor element as a function of the alternating component (S5w) of the transmission signal (S5) or a signal derived therefrom, in particular the transmission signal (S5);

Generating fluorescence radiation (FL) as a function of the current flow and thus typically as a function of the alternating component (S5w) of the transmission signal (S5) or a signal derived therefrom, in particular the transmission signal (S5) and the magnetic flux density B and / or another physical one Parameters, for example the pressure and / or the temperature, the modulation of the intensity (l _fl ) of the fluorescent radiation (FL) being dependent on the modulation of the alternating component (S5w) of the transmission signal (S5) or a signal derived therefrom, in particular the transmission signal (S5) and the magnetic flux density B and / or the other physical parameter depends;

Detection of at least part of this fluorescence radiation (FL) by a radiation receiver (PD) and generation of a receiver output signal (SO) as a function of this

Fluorescence radiation (FL), this dependence preferably being a dependence on the intensity (I _fi ) of the fluorescence radiation (FL).

Correlating the temporal course of the instantaneous values (sO) of the receiver output signal (SO) with the instantaneous values of a measurement signal (MES), the measurement signal (MES) preferably being the alternating component (S5w) of the transmission signal (S5) or a signal derived therefrom or a signal which is functionally related in a predetermined manner is acting.

For example, the functional relationship can be such that it is a measurement signal (M ES) that is phase-shifted with respect to the alternating component (S5w) of the transmission signal (S5) and that this phase shift is adapted by a control. Such an adaptation of the phase shift is known, for example, from the document WO 2017 148 772 A1.

In the example in FIG. 72, a first amplifier (VI) amplifies the receiver output signal (SO) to form the reduced receiver output signal (S1). The amplifier (VI) can also be part of the

Be radiation receiver (PD). A first multiplier (Ml) multiplies the reduced one

Receiver output signal (Sl) with the alternating component (S5w) of the transmission signal (S5) to

Filter input signal (S3). A loop filter (TP), which is preferably a low-pass filter, filters the filter input signal (S3) to the filter output signal (S4), which in the example in FIG Sensor output signal (out). The value of the sensor output signal (out) is then typically a measure of the value of the magnetic flux density B or another physical variable that influences the intensity (l _fl ) of the fluorescent radiation (FL) of the paramagnetic centers (NV1).

The first filter (F1) is only necessary if the paramagnetic centers (NV1) are not excited directly by the flow of electrical current in the sensor element, but rather via second optical centers. For example, diamonds with NV centers as paramagnetic centers (NV1) and FI3 centers as pump radiation sources (PLI) can serve as a sensor element in one of the H3 centers for emitting green pump radiation (LB) directly in the electrical current flow

preferably diamagnetic material (MPZ) of a substrate (D) are caused within the sensor element. The pump radiation (LB) of the H3 centers serving as pump radiation sources (PLI) hits the NV centers serving as paramagnetic centers (NV1), which emit fluorescence radiation (FL) and possibly other physical parameters depending on the magnetic flux density B. This can then be further processed as described above. The material of the sensor element, in this example diamond, then serves as an optical waveguide and thus an optical functional element that the pump radiation source (PLI), namely the H3 center in this example, with the paramagnetic center or centers (NV1) and / or with the Groups (NVC) of paramagnetic centers (NV1), in this example with one or more NV centers (NV1) and / or with one or more groups (NVC) of paramagnetic centers (NV1).

Fig. 73

In the example in FIG. 73, an anode contact (AN) injects an electrical current into the diamagnetic material (MPZ) of the sensor element, for example a diamond. On B.

Burchard "Electronic and Optoelectronic Components and Diamond-Based Component Structures", dissertation, Hagen 1994 is referred to in this context. A cathode contact (KTH) extracts this electrical current from the sensor element. An im

Current path within the sensor element located center (PZ), serves as a pump radiation source (PLI). For example, this center (PZ) can be an H3 center in the exemplary diamond that serves as a sensor element. In this example, the center (PZ) emits green pump radiation (LB) when there is a current flow in the sensor element, i.e. when there is a current flow in the diamond from the anode contact (AN) to the cathode contact (KTH). This green one

Pump radiation (LB) from the center (PZ), for example the said H3 center, can then be added one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1), for example one or more NV centers and / or one or more groups of NV centers in the exemplary diamond, are used, to stimulate the emission of fluorescent radiation (FL). Instead of a single center (PZ), a group (PZC) of centers (PZ) and / or groups (PZC) of centers (PZ) can also be used. The centers (PZ) and / or the groups (PZC) of the centers (PZ) can form a one-, two- or three-dimensional grid within the substrate (D), which in turn can be the sensor element or can be part of the sensor element. In the case of a one-dimensional grid, the centers (PZ) can, for example, be arranged in a circle around a common center point, with a paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group (NVC) or several groups in the center (NVC)

paramagnetic centers (NV1). In one variant, the arrangement of the centers PZ or the groups (PZC) of the centers (PZ) together with the arrangement of the

paramagnetic centers (NV1) and / or the arrangement of groups (NVC) of the

paramagnetic centers (NV1) a one-two or three-dimensional grid, where the

The elementary cell of the grid then comprises one or more centers (PZ) and / or one or more groups (PZC) of centers (PZ) on the one hand and one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers. It can be a translatory and / or rotary grid around a common axis of symmetry or a point of symmetry.

Finally, it should be mentioned that the structure of FIG. 73 is suitable for entangling the center (PZ) with the paramagnetic center (NV1). If necessary, the optical path between the center (PZ) and the paramagnetic center (NV1) can also be optical

Functional elements, as they are already listed elsewhere in this document, supplemented and, if necessary, modified.

Fig u r 74

When working out the invention, it was recognized that a compensation coil (LC), as shown for example in FIG. 29, does not necessarily have to have a turn or an arc. Rather, it is the case that a line can be manufactured, for example, as a microstructured line (LH, LV), for example on the first surface (OFL1) of the sensor element. The paramagnetic center (NV1) can be a few nm below the first surface (OFL1) of the Sensor element be manufactured. This means that the paramagnetic center (NV1) can be in the magnetic near field of the line (LH, LV). The paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) are preferably located at a first distance (r) of less than 1pm, better less than 500 nm, better less than 200 nm, better less than 100 nm, better less than 50 nm, better less than 20 nm away from the exemplary horizontal line (LH). When developing the invention, it was assumed that the line (LH) is particularly preferably less than 50 nm from the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) away. Due to this small distance, even with very low electrical currents (IH) in the line (LH), considerable magnetic flux densities B at the location of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group (NVC) or the Groups (NVC) of paramagnetic centers (NV1) are generated, which influence them along with other possibly relevant physical parameters.

In the example in Figure 74, a horizontal line (LH) is energized with a horizontal current (IH), the word horizontal here in this context to distinguish the current (LH) and the line (LH) from lines (LV) introduced later. and stream (IV). In FIG. 74, the horizontal line (LH) is preferably insulated from the substrate (D) made of diamagnetic material (MPZ). The paramagnetic center (NV1) or a group (NVC) of paramagnetic centers (NV1) is preferably located directly below the horizontal line (LH) at a first distance (d _a l) below the surface (OFL1) of the substrate (D) preferably diamagnetic material (MPZ) - for example diamond - in which the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group (NVC) or groups (NVC) of paramagnetic centers (NV1) is located. In one variant, the first distance (d _a l) is preferably selected to be very small. The first distance (d _a 1) is preferably smaller than 1pm, better smaller than 500 nm, better smaller than 250 nm, better smaller than 100 nm, better smaller than 50 nm, better smaller than 25 nm, possibly smaller than 10 nm. With decreasing distances (d _a l) to the surface (OF1L1) the influence of the surface conditions increases. It has therefore proven to be useful not to go below distances (d _a l) smaller than 20 nm and, if possible, especially in the case of diamonds as substrate (D), the surface (DFL1) by means of the deposition of an epitaxial layer after the production of the paramagnetic centers (NV1) ) to be raised again so that the distance (d _a l) exceeds such a substrate material-specific minimum distance (d _a l) again. The horizontal line (LH) is preferred in in the manner shown in Figure 74 on the surface (OFL1) of the substrate (D) and attached to this and isolated from the substrate (D). In particular, modulations of the horizontal control current (IH) can be used to manipulate the spin of the paramagnetic center (NV1) or the spins of paramagnetic centers (NV1) of the group (NVC) or groups (NVC) of paramagnetic centers (NV1). The horizontal line (LH) is preferably firmly connected to the substrate (D) and typically forms a unit with it. The horizontal line (LH) is typically preferably produced by electron beam lithography or similar high-resolution lithography methods on the substrate (D) if paramagnetic centers (NV1) and / or different groups (NVC) of paramagnetic centers (NVC) located under different horizontal lines (LH) NV1) should couple with each other. If such a coupling is not intended, less high-resolution images can be used

Find lithography methods use. If electrostatic potentials are applied between the substrate (D) and this line (LH, LV) by a control device (AH) of this line (LH), the optical properties and the fluorescent radiation (LB), in particular the intensity (l _fl ) manipulate and influence the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) of the group (NVC) of paramagnetic centers (NV1) below the relevant line (LH). That way you can

For example, when using NV centers in diamond as paramagnetic centers (NV1), individual NV centers are forced to leave the fluorescent NV state and thus become dark due to a local shift in the Fermi level. With the help of this

Construction is thus possible, for example, in a one-dimensional grid of

paramagnetic centers (NV1) or in a one-dimensional grid of groups (NVC) of paramagnetic centers (NV1) the fluorescence radiation (LB) of individual paramagnetic centers (NV1) or the fluorescence radiation (LB) of individual groups (NVC) of paramagnetic centers (NV1) ) selectively by suitable setting of a line-specific electrical potential of the relevant horizontal line (LH), which is located above the individual paramagnetic center (NV1) or the relevant individual group (NVC) of paramagnetic centers (NV1) on the surface of the substrate (D) , to switch on and off and thus achieve a linear resolution through selective activation and deactivation of the fluorescence radiation (FL) of individual paramagnetic centers (NV1) or groups (NVC) of paramagnetic centers (NV1), which for example integrate the one-dimensional spatially resolved measurement of currents in Circuits allowed. Thus the intensity (l _fl ) of individual paramagnetic centers (NV1) can be within several paramagnetic centers (NV1) and / or individual groups (NVC) of paramagnetic centers (NV1) within several groups (NVC) of paramagnetic centers (NV1) by means of a modulation of the line-specific electrical potential of the horizontal line (LH) in question, which is located above the individual paramagnetic Center (NV1) or the relevant individual group (NVC) of paramagnetic centers (NV1) is located on the surface of the substrate (D), selectively with respect to other paramagnetic centers (NV1) and / or groups (NVC) of paramagnetic centers (NV1) in the same substrate (D) can be modulated. The other paramagnetic centers (NV1) and / or groups (NVC) of paramagnetic centers (NV1) in the same substrate (D) then possibly not modulated. So we propose a sensor system here, whose

Sensor element has a substrate (D) that has one or more first means (LH) and one or more second means (AVH), for example by means of static potentials of the first means (LH) against the potential of the sensor element (D), the Fermi -Level at the place of individual

paramagnetic centers (NV1) and / or several paramagnetic centers (NV1) and at the location of one or more groups (NVC) of paramagnetic centers (NV1) so that these individual paramagnetic centers (NV1) and / or several paramagnetic centers (NV1) and one or more groups (NVC) of paramagnetic centers (NV1) are activated or

deactivated, whereby activated in NV centers means that they preferentially adopt the N state and fluoresce - that is, emit fluorescence radiation (FL) when irradiated with pump radiation (LB) - and deactivated means that these preferably have an N state assume different states or do not fluoresce - do NOT emit fluorescence radiation (FL) when exposed to pump radiation (LB) -. When the horizontal lines (LH) are arranged in a one-dimensional grid with a corresponding one-dimensional grid of paramagnetic centers (NV1) or groups (NVC) of paramagnetic centers (NVC) located underneath in the preferably diamagnetic material (MPZ) of the substrate (D) NV1), a linear high-resolution imaging measurement, for example of the magnetic flux density B with a resolution below the fluorescence radiation wavelength (lh) of a few nm, is possible if individual paramagnetic centers (NV1) and / or groups (NVC) of paramagnetic centers are selected one after the other Suitable potentials of the horizontal lines (LH) relative to the potential of the substrate (D) are successively activated individually and then deactivated again after the magnetic flux density B has been determined, so that the fluorescence radiation (FL) is always preferably only from a few, better just one, activated paramagnetic Center (NV1) and / ode r a few groups better just one group (NVC) activated paramagnetic centers (NV1), so that each of the locations of the paramagnetic centers (NV1) or the location of the groups (NVC) of paramagnetic centers after activation, measurement of the magnetic flux density B and deactivation of all paramagnetic centers (NV1) or groups (NVC) paramagnetic centers (NV1) for each of these locations a measured value is available based on a recorded value of the recorded fluorescence radiation (FL) at the time of activation of the paramagnetic center or centers (NV1) and / or the group or groups (NVC) of paramagnetic centers of this location. These measured values can then for example by means of a

Computer system (pC) as an image. For this purpose, the horizontal line (LH) is preferably made from an optically transparent material, for example indium tin oxide (English abbreviation: ITO). From the publication Marcel Manheller, Stefan Trellenkamp, Rainer Waser, Silvia Karthäuser, "Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography", Nanotechnology, Vol. 23, No. 12, Mar. 2012, DOI: 10.1088 / 0957 -4484/23/12/125302 it is known that the horizontal lines (LH) can be produced with a very small spacing (for example 5 nm and smaller, for example 5 nm) from one another, from J. Meijer, B. Burchard, M. Domhan , C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup, "Generation of single color centers by focused nitrogen implantation" Appl. Phys. Lett. 87: 261909 (2005); https://doi.Org/10.1063/l.2103389 a highly precise placement of the nitrogen atoms to generate the NV centers is known.

Measures to increase the yield in the manufacture of the NV centers, e.g. a

Sulfur implantation or n-doping of the substrate (D) are mentioned in the document presented here. In this respect, a precise, yield-safe placement of the paramagnetic centers (NV1) under the horizontal lines (LH) by means of focused ion implantation is possible without problems. The locally high-resolution production of the horizontal lines (LH) is by means of

Electron beam lithography possible. The placement can be so close together that two neighboring paramagnetic centers (NV1), in particular within a group (NVC) of paramagnetic centers (NV1) under different horizontal lines (LH1, LH2) can interact with each other and a quantum register based on the coupling of the

Electron configurations can form via the horizontal lines (LH) by means of

Microwave signals can be controlled.

Targeted deterministic and / or focused ion implantation, if necessary, of individual or more foreign atoms in the material (MPZ) of the substrate (D) of the sensor element is sufficient to ensure that individual or more paramagnetic centers (NV1) and / or one or more groups (NVC) are manufactured with sufficient accuracy. of paramagnetic centers (NV1) possible. On the font J. Meijer, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup, "Generation of single color centers by focused nitrogen Implantation" Appl. Phys. Lett. 87, 261909 (2005); https://doi.Org/10.1063/l.2103389, if a diamond is used as substrate (D), the yield of NV centers can be increased by n-doping, for example with sulfur. Thus, an exact placement of the paramagnetic centers (NV1) and / or groups (NVC) of paramagnetic centers (NV1) in a predictable manner spatially relative to the horizontal line (LH) is possible and can therefore be carried out.

For example, the sensor element can be a diamond, on the surface (OF1) of which the said lines (LH) is applied and where below the line (LH) there is a group (NVC) of NV centers with such a high density of NV centers below the line (LH) are in the vicinity of the magnetic flux density B of the magnetic field generated by the current flow (IH, IV) in the two intersecting lines (LV, LH) that the area of this group of NV centers as HD-NV-Diamant is to be regarded in the sense of this document. That a group (NVC) of NV centers or paramagnetic centers (NV1) can be placed in the near range, i.e. particularly preferably closer than 50 nm, i.e. closer than 100 pm and / or better closer than 50 pm and / or better closer than 20 pm and / or better closer than 10pm and / or better closer than 5pm and / or better closer than 2pm and / or better closer than 1pm and / or better closer than 500nm and / or better closer than 200nm and / or better closer than 100nm and / or better closer than 50nm and / or better closer than 20nm and / or better closer than 10nm and / or better closer than 5nm and / or better closer than 2nm, the magnetic field of a current-carrying, in particular straight and / or linear conductor (LH) is favorable, was recognized in the preparation of this invention. The line (LH) is preferably made of one at the

_Pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB) optically transparent material and / or of a material that is optically transparent at the fluorescence radiation _wavelength (l ^) of the fluorescence radiation (FL). For example, this material of the line (LH) can be indium tin oxide, called ITO for short, or a similar, optically transparent and electrically non-conductive material. For example, if microwaves are to be used, they can use them

Construction can be fed in and used.

Fig. 75

In the example in FIG. 75, a horizontal line (LH) is energized with a horizontal current (IH) and a vertical line (LV) is energized with a vertical current (IV), the words horizontal and vertical serve here in this context to differentiate the currents and lines. In FIG. 75, the vertical line (LV) and the horizontal line (LH) are insulated from one another by way of example and preferably from the substrate (D) made of diamagnetic material (MPZ). The construction of Figure 75 differs from the construction in Thiago P. Mayer Alegre, Antonio C. Torrezan de Souza, Gilberto Medeiros-Ribeiro, "Microstrip resonator for microwaves with controllable polarization", arXiv: 0708.0777v2 [cond-mat.other ] 10/11/2007.

The horizontal line (LH) and the vertical line preferably intersect at a point on the surface (OFL1) of the sensor element, the horizontal line (LH) and the vertical line (LV) preferably being electrically isolated from one another by an insulator (IS) . The paramagnetic center (NV1) or a group (NVC) of paramagnetic centers (NV1) is preferably located directly below the intersection of the two lines (LH, LV) at a first distance (d _a l) below the surface (OFL1) of the substrate (D) made of preferably diamagnetic material (MPZ) - for example diamond - in which the paramagnetic center (NV1) or the group (NVC) of paramagnetic centers (NV1) is located. In one variant, the first distance (d _a l) is preferably selected to be very small. The first distance (d _a l) is preferably smaller than 1pm, better smaller than 500 nm, better smaller than 250 nm, better smaller than 100 nm, better smaller than 50 nm, better smaller than 25 nm, possibly smaller than 10 nm. With increasing distances ( d _a l) to the surface (OF1L1) the influence of the surface conditions increases. It has therefore proven to be useful not to go below distances (d _a l) smaller than 20 nm and, if possible, especially in the case of diamonds as substrate (D), the surface (DFL1) by means of the deposition of an epitaxial layer after the production of the paramagnetic centers (NV1) ) to be raised again so that the distance (d _a l) exceeds such a substrate material-specific minimum distance (d _a l) again. The vertical line (LV) and the horizontal line (LH) are preferably produced in the manner shown in FIG. 75 on the surface (OFL1) of the substrate (D) and against the substrate (D) and preferably

isolated from each other. The construction of Figure 75 thus differs from the construction of the font Thiago P. Mayer Alegre, Antonio C. Torrezan de Souza, Gilberto Medeiros-Ribeiro, "Microstrip resonator for microwaves with controllable polarization", arXiv: 0708.0777v2 [cond-mat. other] October 11, 2007 in which a single cross-shaped conductor is used as a microwave resonator. This construction allows the direction of rotation of the magnetic field and thus the electrical flux density B to be precisely controlled. In particular, there are phase modulations of the vertical control current (IV) in the vertical line (LV ) and the horizontal control current (IH) to manipulate the spin of the paramagnetic center (NV1) or the spins of paramagnetic centers (NV1) of the group (NVC) of paramagnetic centers (NV1) possible. The vertical line (LV) and the horizontal line (LH) are preferably firmly connected to the substrate (D) and typically form a unit. The vertical line (LH) and / or the horizontal line (LH) are typically preferably produced by electron beam lithography or similar high-resolution lithography methods on the substrate (D) if paramagnetic centers (NV1) and / or under different lines (LH, LV) Different groups (NVC) of paramagnetic centers (NV1) lying there are supposed to couple with one another. If such a coupling is not intended, less high-resolution images can be used

Find lithography methods use. If electrostatic potentials are applied between the substrate (D) and these lines (LH, LV) by a control device (AH, AV) of these lines (LH, LV), the optical properties and the fluorescence radiation (LB) of the paramagnetic center ( NV1) or the paramagnetic centers (NV1) of the group (NVC) of paramagnetic centers (NV1) manipulate and influence. In this way, for example when NV centers in diamond are used as paramagnetic centers (NV1), individual NV centers can be forced to leave the fluorescent NV state and thus become dark by locally shifting the Fermi level. With the help of this

Construction is thus possible, for example, in a one or two-dimensional grid of paramagnetic centers (NV1) or in a one or two-dimensional grid of groups (NVC) paramagnetic centers (NV1) the fluorescence radiation (LB) of individual paramagnetic centers (NV1) or . the fluorescence radiation (LB) of individual groups (NVC) of paramagnetic centers (NV1) selectively through suitable setting of a line-specific electrical potential of the relevant horizontal line (LH) and / or the relevant vertical line (LV), which is located above the individual paramagnetic center ( NV1) or the relevant individual group (NVC) of paramagnetic centers (NV1) on the surface of the substrate (D), toggle them on and off and thus achieve spatial resolution through selective activation and deactivation of the fluorescent radiation (FL) of individual paramagnetic centers (NV1 ) or from groups (NVC) of paramagnetic centers (NV1) that be For example, the spatially resolved measurement of currents in integrated circuits is possible. We therefore propose a sensor system whose sensor element has a substrate (D) that has one or more first means (LH, LV) and one or more second means (AVH, AVV), for example by means of static potentials of the first means (LH, LV) compared to the potential of the sensor element (D) the Fermi level at the location of individual paramagnetic centers (NV1) and / or several paramagnetic centers (NV1) and at the location to influence one or more groups (NVC) of paramagnetic centers (NV1) in such a way that these individual paramagnetic centers (NV1) and / or several paramagnetic centers (NV1) and one or more groups (NVC) of paramagnetic centers (NV1) are activated or

deactivated, whereby activated in NV centers means that they preferably adopt the N state and fluoresce, and deactivated means that they preferably assume a state different from the N state or do not fluoresce. When the horizontal and vertical lines (LH, LV) are arranged in a one or two-dimensional grid with a corresponding one or two-dimensional grid of paramagnetic centers (NV1) or groups (NVC) of paramagnetic centers located underneath in the material of the substrate (D) (NVl), a high-resolution imaging measurement, for example of the magnetic flux density B with a resolution below the fluorescence radiation wavelength (lh) of a few nm, is possible if individual paramagnetic centers (NV1) and / or groups (NVC) of paramagnetic centers are selected one after the other Suitable potentials of the horizontal lines (LH) and / or vertical lines (LV) relative to the potential of the substrate (D) are successively activated individually and then deactivated again after determining the magnetic flux density B, so that the fluorescence radiation (FL) is always preferably only from few, better just one activated paramagn etic center (NV1) and / or a few groups, better just one group (NVC) of activated paramagnetic centers (NVl), so that each of the locations of the paramagnetic centers (NV1) or the location of the groups (NVC) of paramagnetic centers after activation, Measurement of the magnetic flux density B and deactivation of all paramagnetic centers (NV1) or groups (NVC) of paramagnetic centers (NV1) for each of these locations, a measured value based on a recorded value of the recorded fluorescence radiation (FL) at the time of activation of the paramagnetic center (s) Centers (NV1) and / or the group or groups (NVC) of paramagnetic centers of this location is present. These measured values can then be displayed as an image, for example by means of a computer system. For this purpose, the vertical line (LV) and / or the horizontal line (LH) are preferably made of an optically transparent material, for example indium tin oxide (English abbreviation: ITO). From the publication Marcel Manheller, Stefan Trellenkamp, Rainer Waser, Silvia Karthäuser, "Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography", Nanotechnology, Vol. 23, No. 12, Mar. 2012, DOI: 10.1088 / 0957 -4484/23/12/125302 it is known that the vertical lines (LV) and the horizontal lines (LH) can be produced with a very small distance (eg 5 nm and smaller, eg 5 nm) from one another. From the publication J. Meijer, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup, "Generation of single color centers by focused nitrogen Implantation" Appl. Phys. Lett. 87, 261909 (2005); https://doi.Org/10.1063/l. A highly precise placement of the nitrogen atoms to generate the NV centers is known in 2103389. Measures to increase the yield, eg a sulfur implantation or an n-doping of the substrate (D) are mentioned in the document presented here

paramagnetic centers (NV1) under the crossing points of the lines (LV, LH) by means of focused ion implantation without problems. The locally high-resolution production of the lines (LH, LV) is possible using electron beam lithography. The placement can be so close to one another that two neighboring paramagnetic centers (NV1, NV2), in particular within a group (NVC) of paramagnetic centers (NV1) under different

Crossing points of two vertical lines (LV) and one horizontal line (LH1, LH2) or of a vertical line (LV) and two horizontal lines can interact with one another and form a quantum register based on the coupling of the electron configurations, which can be accessed via the lines (LH , LV) can be controlled by means of microwave signals.

Targeted deterministic and / or focused ion implantation, if necessary, of individual or more foreign atoms in the material (MPZ) of the substrate (D) of the sensor element is sufficient to ensure that individual or more paramagnetic centers (NV1) and / or one or more groups (NVC) are manufactured with sufficient accuracy. of paramagnetic centers (NV1) possible. To the text J. Meijer, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup, "Generation of single color centers by focused nitrogen implantation" Appl. Phys. Lett. 87, 261909 (2005); https://doi.Org/10.1063/l.2103389, if a diamond is used as substrate (D), the yield of NV can be reduced by n-doping, for example with sulfur - Centers are increased.Thus, an exact placement of the paramagnetic centers (NV1) and / or groups (NVC) of paramagnetic centers (NV1) in a predictable way spatially relative to the lines (LH, LV) is possible and thus feasible.

For example, the sensor element can be a diamond, on the surface (OF1) of which said lines (LV, LH) are applied and a group (NVC) of NV centers below the intersection of the lines (LH, LV) are in such a high density below the crossing point of the two lines in the downstream area of the magnetic flux density B of the magnetic field generated by the current flow (IH, IV) in the two crossing lines (LV, LH) that the area of this group of NV- Centers as HD-NV- Diamond is to be regarded in the sense of this document. That a group (NVC) of NV centers or paramagnetic centers (NV1) can be placed in the near range, i.e. particularly preferably closer than 50 nm, i.e. closer than 100 pm and / or better closer than 50 pm and / or better closer than 20 pm and / or better closer than 10pm and / or better closer than 5pm and / or better closer than 2pm and / or better closer than 1pm and / or better closer than 500nm and / or better closer than 200nm and / or better closer than 100nm and / or better closer than 50nm and / or better closer than 20nm and / or better closer than 10nm and / or better closer than 5nm and / or better closer than 2nm to the magnetic field of one or more current-carrying, in particular straight and / or linear conductors (LH, LV ) is favorable, was recognized in the preparation of this invention. The lines (LH, LV) are preferably made from a material which is optically transparent at the pump radiation wavelength of the pump radiation (LB) and / or from a material

Fluorescence radiation _wavelength ^ _fl ) of the fluorescence radiation (FL) optically transparent material. For example, this material of the lines (LV, LH) can be indium tin oxide, or ITO for short, or a similar, optically transparent and electrically non-conductive material. If the horizontal current (IH) is modulated and the vertical current (IV) is modulated in the same way, but phase-shifted with respect to the horizontal current (IH), preferably +/- 90 ° out of phase, this results in the example of FIG. 75 at the location of the paramagnetic center (NV1) or at the location of the group (NVC) of the paramagnetic centers (NV1) or at the location of the groups (NVC)

paramagnetic centers (NV1) a rotating magnetic flux density B, which, depending on the frequency of the electrical currents (IH, IV), can hit resonances of the paramagnetic center (NV1) or the group (NVC) of paramagnetic centers (NV1) and this one Makes NMR analysis accessible. For example, if microwaves are to be used, they can be fed in and used via this construction.

Fig. 76

FIG. 76 largely corresponds to FIG. 75, with the difference that one or more atomic nuclei or one or more atomic nuclei are now also in the vicinity of the paramagnetic center or centers (NV1) or the group (NVC) or groups (NVC) of paramagnetic centers (NV1) or several groups of atomic nuclei are located which, for example, have a nuclear spin which, for example, has a magnetic moment and which interact with the paramagnetic center or centers (NV1) or with the group or groups (NVC) of paramagnetic centers (NVC), while the remaining atoms of the material of a substrate (D) of the sensor element preferably do not have a nuclear spin. For example, the sensor element can be a diamond, which preferably consists of the carbon isotope C ^12, has no magnetic moment and does not significantly interact with NV centers as paramagnetic centers (NV1). It is therefore conceivable to make the sensor element isotopically pure, for example by depositing an isotopically pure epitaxial layer, so that in a first approximation there is no or only an interaction between the majority atoms of a material of the substrate (D) of the sensor element and the or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) takes place. In the example one

Sensor element in the form of a diamond made of C ¹² carbon isotopes can now be single and / or several nuclear centers (CI) and / or one or several groups (CIC) of nuclear centers (CI) with a nuclear spin produced by the fact that individual of the C ¹² carbon isotopes of the atoms of the sensor material of the exemplary diamond are replaced by C ¹³ carbon isotopes. These C ¹³ carbon isotopes can be precisely localized by means of focused ion implantation. On J. Meijer, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup, "Generation of single color centers by focused nitrogen Implantation" Appl. Phys. Lett. 87, 261909 (2005); https://doi.Org/10.1063/l.2103389 is referred to here. This technique can be used here in a slightly modified manner. These C ¹³ carbon isotopes then form core centers (CI) in the diamond due to their nuclear spin These core centers (CI) can also be single or multiple groups (CIC) of such core centers (CI). The core center (CI) or the core centers (CI) or the group (CIC) of core centers (CI) or the groups (CIC) of core centers (CI) are at a second distance (d _a 2) below the surface (OFL1) of the substrate (D) of the sensor element and can, as before for the paramagnetic center (NV1) or the paramagnetic centers (NV1) or The group or groups (NVC) of paramagnetic centers (NV1) are described in the description of FIG Way by means of the horizontal line (LH) and the vertical line (LV) can be controlled and coupled with the paramagnetic centers (NV1). The control can also only be done using one of these lines (LH, LV) with restricted

Control option take place.

In this case, different coupling frequencies are used for the coupling of the paramagnetic centers (NV1) with the core centers (CI) than for the coupling of the paramagnetic centers (NV1) with one another. In that case, the sensor output signal (out) can depend on the state of one or more core centers (CI) and / or one or more groups (CIC) of core centers (CI). This has the advantage that the core centers (CI) each have a greater mass and react differently to changes in the magnetic flux B or the other possibly detectable physical parameters at their location than the paramagnetic centers (NV1) this difference can be used, for example, to to include acceleration sensors, sound sensors, gravimeters and possibly

Build seismometers. For example, the paramagnetic reference centers (NV2) in FIG. 32 can be paramagnetic centers (NV1) that are not influenced by core centers (CI), while the paramagnetic center or centers (NV1) or the group ( NVC) or the groups (NVC) of paramagnetic centers (NV1) in Figure 32 around one or more paramagnetic centers (NV1) or a group (NVC) or groups (NVC)

paramagnetic centers (NV1) can act from a core center (CI) or a plurality of core centers (CI) or a group (CIC) of core centers (CI) or a plurality of

Groups (CIC) are influenced by core centers (CI). For example, the

The sensor element of FIG. 32 is an isotopically pure diamond made of C ¹² carbon isotopes in which the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) are manufactured in the form of NV centers are in the area of action, i.e. at a distance of a few nm, to the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group (NVC) or the group (NVC) of paramagnetic centers (NV1), i.e. in ours Example NV centers, a core center (CI) or core centers (CI) or a group (CIC) or groups (CIC) of core centers (CI) are present or placed in the form of C ¹³ carbon isotopes. For example, the

The reference sensor element of FIG. 32 is also an isotopically pure diamond made of C ¹² carbon isotopes in which the paramagnetic reference center (NV2) and / or the paramagnetic reference centers (NV2) or the group or groups of paramagnetic reference centers (NV2) are also manufactured in the form of NV centers are, but now in the area of action of this paramagnetic reference center (NV2) and / or these paramagnetic reference centers (NV2) or the group or groups of paramagnetic reference centers (NV2), i.e. in our example NV centers or groups of NV centers, NONE or essentially no core center (CI) or no core centers (CI) or groups (CIC) of core centers (CI) in the form of a few C ¹³ carbon isotopes are present or placed, so that such core centers (CI) or groups (CIC ) of core centers (CI) the fluorescence radiation (KFL) of the paramagnetic reference centers (NV2) for the intended purpose not or only in a tolerable manner. The isotopes forming the core centers can be placed by means of focused ion implantation of these isotopes, for example from the C ¹³ carbon atoms in diamond, analogously to the method of placing individual nitrogen atoms in the formation of NV centers. On the writing J. Meijer, B.

Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup, "Generation of single color centers by focused nitrogen implantation" Appl. Phys. Lett. 87, 261909 (2005);

https://doi.Org/10.1063/l.2103389 is pointed out again in this context. This has the advantage that core states, namely those of the core center (s) (CI) or the group or groups (NVC) of NV centers as paramagnetic centers (NV1) - here in the example of the C ¹³ - carbon atoms as core centers ( CI) in the transmission path in the vicinity of the paramagnetic center or centers (NV1) or the group or groups (NVC) of NV centers as paramagnetic centers (NV1) (see FIG. 32) - can be measured by means of a simple circuit. In such an embodiment, the device of FIG. 32 is characterized in that the sensor output signal (out) of states of the nuclear spin of atoms, namely that of the nuclear center (CI) or the nuclear centers (CI) or the group or groups of nuclear centers ( CIC), which is located in the

Area of influence of a paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of NV centers as paramagnetic centers (NV1).

Figure 77

Irradiation with pump radiation (LB) results in the electron configuration of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) from NV centers as paramagnetic centers (NV1), for example from NV- Centers in diamond, photoelectrons that can be sucked out. Flierzu: Petr Siyushev, Milos Nesladek, Emilie Bourgeois, Michal Gulka, Jaroslav Hruby, Takashi Yamamoto, Michael Trupke, Tokuyuki Teraji, Junichi Isoya, Fedor Jelezko, “Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond "Science 15 Feb 2019, Vol. 363, Issue 6428, pp. 728-731, DOI: 10.1126 / science. Aav2789. These photoelectrons of the paramagnetic centers (NV1) are replenished with continued exposure to the pump radiation (LB) and thus generate a photocurrent that depends on the magnetic flux density B at the location of the paramagnetic center (NV1) and possibly other physical parameters. Thus, from G. Balasubramanian, IY Chan, R. Kolesov, M. Al-Hmoud, J. Tisler, C. Shin, C. Kim, A. Wojcik, PR Hemmer, A. Krueger, T. Hanke, A. Leitenstorfer , R. Bratschitsch, F. Jeletzko, J. Wrachtrup, "nanoscale imaging magnetometry with diamond spins under ambient conditions", Natur 455, 648 (2008) the locally high-resolution magnetic field measurement with NV centers known. From G. Kucsko, PC Maurer, NY Yao, M. Kubo, HJ Noh, PK Lo, H. Park, MD Lukin, "Nanometre-scale thermometry in a living cell", Nature 500, 54-58 (2013), thermometry with NV centers is known. From F. Dole, H. Fedder, MW Doherty, T. Nöbauer, F. Rempp, G. Balasubramanian, T. Wolf, F. Reinhard, LCL

Hollenberg, F. Jeletzko, J. Wrachtup, "Electric-field sensing using single diamond spins", Nat. Phs. 7, 459-463 (in 2011 the measurement of electric fields with NV centers is known. From A. Albrecht, A.

Retzker, M. Plenio, "Nanodiamond interferometry meets quantum gravity" arXiv: 1403.6038vl

[quant-ph] 24 Mar 2014 the measurement of gravitational fields with NV centers is known. It follows directly from this that the measurement of rotational movements and of

Accelerations with NV centers as well as the possibility of construction of

Navigation systems with NV centers and paramagnetic centers (NV1) exist. The prerequisite for such systems is the availability of diamonds with a high density of paramagnetic centers (NV1), i.e. preferably the availability of HD-NV diamonds. Thus the measurement of the magnetic flux density B, the electric field strength E, the acceleration g, the

The speed of rotation co _r and the temperature q are known from the prior art and can be carried out with the systems presented here.

For this purpose, for example, the device in FIG. 75 can be provided with contacts (KH, KV) which connect one or more lines (LH, LV) ohmically to the material of the sensor element, for example in the substrate (D), for example diamond enable such an extraction. This makes it possible to use this photocurrent instead of fluorescent radiation (FL). The value of this photocurrent depends on the intensity (I _pmp ) of the pump radiation (LB) and the magnetic flux density B and possibly other physical parameters.

Fig. 78 and 79

FIGS. 78 and 79 serve to illustrate an optimal energization. First, FIG. 78 will be discussed here. Using the example of a quantum bit (QUB) with a first vertical one

Shielding line (SV1) and a second vertical shielding line (SV2), the principle is shown. The drawing corresponds essentially to FIG. 76. In addition, there are a first vertical shielding line (SV1) and a second vertical shielding line (SV2) and a first horizontal shielding cable (SH1) is shown. A second horizontal shielding line (SH2) can be assumed to be located in front of the quantum dot in the area not shown by the section of the sectional image in front of the sectional plane. Reference is made here to the following FIG. 79 with a position of the cutting plane rotated by 90 °. Parallel to a first perpendicular (LOT) through the quantum dot with the paramagnetic center (NV1) or the group or groups (NVC) of paramagnetic centers (NV1), a first further perpendicular line (VLOT1) and a second further perpendicular line ( VLOT2) through the respective intersection points of the corresponding vertical shielding lines (SV1, SV2) with the horizontal line (LH). At the distance (d _a l) of the quantum dot with the paramagnetic center (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) from the surface (OFL1) a first virtual vertical quantum dot (VVNV1) and a second virtual quantum dot (VVNV2). The first vertical electrical shielding current (ISV1) through the first vertical shielding line (SV1) and the second vertical electrical shielding current (ISV2) through the second vertical shielding line (SV2) and the first horizontal electrical shielding current (ISH1) through the first horizontal shielding line (SH1) and the second horizontal electrical shielding current (ISH2), not shown, through the second horizontal shielding line (SH2), not shown, and the horizontal current (IH) through the horizontal line (IH) and the vertical current (IV) through the vertical line together result in six parameters that can be freely chosen. Now the flux density (B _NV ) of a circularly polarized electromagnetic wave field can be used to manipulate the quantum dot with the paramagnetic center (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) at the location of the quantum dot with the paramagnetic center (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) are specified and it is required that the first virtual horizontal magnetic flux density (B _V HNVI) at the location of the first virtual horizontal quantum dot (VHNV1) and the second virtual horizontal magnetic flux density (B _{VH V} 2) at the location of the second virtual horizontal quantum dot (VHNV2) and the first virtual vertical magnetic flux density (B _W NV) at the location of the first virtual vertical quantum dot (VVNV1) and the second virtual vertical magnetic flux density (B _WNV2 ) at the location of second virtual vertical quantum dot (VVNV2) disappear. The first virtual horizontal quantum dot (VHNV1) and the second virtual horizontal quantum dot (VHNV2) are not shown in the figure, since the figure shows a cross section and the cut surface has to be rotated by 90 ° around the LOT axis for visibility. FIG. 79 shows this section. FIG. 79 serves to illustrate one optimal current supply using the example of a quantum bit (QUB) with a first horizontal

Shielding line (SH1) and a second horizontal shielding line (SH2). This balanced energization can minimize the unintentional response of quantum dots. The crossing angle (a _k ) is preferably a right angle of 90 °.

Fig u r 80

FIG. 80 shows the block diagram of an exemplary quantum sensor system with an exemplary schematically indicated three-bit quantum register with a first quantum bit (QUB11) and a second quantum bit (QUB12) and a third quantum bit (QUB13), each of which has one quantum bit (QUB) in this example Figure 78 and Figure 79 should correspond.

The core of the exemplary control device in FIG. 80 is a control device (pC) which is preferably a control computer (pC) or a signal processor or a finite state machine or the like. The overall device preferably has a

Magnetic Field Control (MFC) on which their operating parameters are preferred from the said

Control device (pC) receives and preferably returns operating status data to this control device (pC). The magnetic field control (MFC) is preferably a regulator, the task of which is to compensate for an external magnetic field for the entire device by means of active counter-regulation, for example by means of a common compensation coil (LC). The magnetic field control (MFC) preferably uses a magnetic field sensor (M FS) for this, which preferably detects the magnetic flux B in the device, preferably in the vicinity of the quantum dots of the paramagnetic centers (NV1) or the groups (NVC) of paramagnetic centers (NV1). The magnetic field sensor (MFS) itself is preferably also a quantum sensor. Here be on the

Registrations DE 10 2018 127 394.0, DE 10 2019 130 1 14.9, DE 10 2019 120 076.8 and DE 10 2019 121 137.9 referenced. With the help of a magnetic field control device (M FK) regulates the

Magnetic field control (MFC) the magnetic flux density B. A quantum sensor is preferably used because it has the higher accuracy in order to sufficiently stabilize the magnetic flux density B of the magnetic field.

The control device preferably controls the horizontal ones via a control unit A (CBA)

Driver stages (HD1, HD2, HD3) and vertical driver stages (VD1) that preferably supply the horizontal lines (LH1, LH2, LH3) and vertical lines (LV1) with the respective horizontal and vertical currents and the correct frequencies and temporal burst -Duration generate for the spin control of the spins of the paramagnetic centers (NV1) or the groups of paramagnetic centers (NVC). If there are core centers (CI) in the substrate (D) near the paramagnetic centers (NV1), the core centers (CI) as well as the pairings of paramagnetic center (NV1) and core center (CI) can be addressed in this way. The control device then also preferably controls the horizontal driver stages (HD1, HD2, HD3) and vertical driver stages (VD1) via a control unit A (CBA), which preferably also include the horizontal lines (LH1, LH2, LH3) and vertical lines (LV1) energize the respective horizontal currents and vertical currents and the correct frequencies and temporal burst durations for the spin control of the spins of the paramagnetic centers (NV1) or the groups of paramagnetic centers (NVC) when coupled with the core pins of a

Core center (CI) or several core centers (CI) or a group or groups (CIC) of core centers (CI). As a consequence, the respective

paramagnetic centers (NV1) are entangled with the respective core centers (CI). If the paramagnetic centers (NV1) of two neighboring quantum bits (QUB11, QUB12, QUB13) are placed close enough to one another, they can also be entangled with one another. The

In this case, the control device also preferably controls the horizontal driver stages (HD1, HD2, HD3) and vertical driver stages (VD1) via the control unit A (CBA), which preferably control the horizontal lines (LH1, LH2, LH3) and vertical lines (LV1). energize with the respective horizontal currents and vertical currents and generate the correct frequencies and temporal burst durations for the spin control of the spins of the paramagnetic centers to be coupled (NV1) or the groups of paramagnetic centers (NVC).

The control unit A (CBA) sets the frequency and the pulse duration of the first horizontal shielding current (ISH1) for the first horizontal shielding line (SH1) in the first horizontal driver stage (HD1) according to the specifications of the control device (pC).

The control unit A (CBA) sets the frequency and the pulse duration of the first horizontal current (IH1) for the first horizontal line (LH1) in the first horizontal driver stage (HD1) according to the specifications of the control device (pC).

The control unit A (CBA) sets the frequency and the pulse duration of the second horizontal shielding current (ISH2) for the second horizontal shielding line (SH2) in the first horizontal driver stage (HD1) and that in the second horizontal driver stage in accordance with the specifications of the control device (pC) (HD2) a. The control unit A (CBA) sets the frequency and the pulse duration of the second horizontal current (IH2) for the second horizontal line (LH2) in the second horizontal driver stage (HD2) according to the specifications of the control device (pC).

The control unit A (CBA) sets the frequency and the pulse duration of the third horizontal shielding current (ISH3) for the third horizontal shielding line (SH3) in the second horizontal driver stage (HD2) and that in the third horizontal driver stage in accordance with the specifications of the control device (pC) (HD3) a.

The control unit A (CBA) sets the frequency and the pulse duration of the third horizontal current (IH3) for the third horizontal line (LH3) in the third horizontal driver stage (HD3) according to the specifications of the control device (pC).

The control unit A (CBA) sets the frequency and the pulse duration of the fourth horizontal shielding current (ISH4) for the fourth horizontal shielding line (SH4) in the third horizontal driver stage (HD2) and in the fourth horizontal driver stage (HD2) according to the specifications of the control device (pC). HD4), which is only indicated due to lack of space.

The control unit A (CBA) sets the frequency and the pulse duration of the first vertical shielding current (ISV1) for the first vertical shielding line (SV1) in the first vertical driver stage (HV1) according to the specifications of the control device (pC).

The control unit A (CBA) sets the frequency and the pulse duration of the first vertical current (IV1) for the first vertical line (LV1) in the first vertical driver stage (VD1) according to the specifications of the control device (pC).

Synchronized by the control unit A (CBA), these driver stages (VD1, HD1, HD2, HD3, HD4) feed their current in a fixed phase relationship with respect to a common one

Synchronization time in the lines (SV1, LV1, SV2, SH1, LH1, SH2, LH2, SH3, LH3, SH4).

Before this, a control unit B (CBB) configures a first horizontal receiver stage (HS1) in such a way that it takes the currents fed in from the first horizontal driver stage (HD1) on the other side of the lines. Instead of a configurable first horizontal receiver stage (HS1), the first horizontal line (LH1) can also be connected to a suitable

Terminating resistor can be provided to ground, for example. Before this, the control unit B (CBB) configures a second horizontal receiver stage (HS2) in such a way that it takes the currents fed in from the second horizontal driver stage (HD2) on the other side of the lines. Instead of a configurable second horizontal receiver stage (HS2), the first horizontal line (LH2) can also be connected to a suitable

Terminating resistor can be provided to ground, for example.

Before this, the control unit B (CBB) configures a third horizontal receiver stage (HS3) in such a way that it takes the currents fed in from the third horizontal driver stage (HD3) on the other side of the lines. Instead of a configurable third horizontal

Receiver stage (HS1) can also use a suitable third horizontal line (LH3)

Terminating resistor can be provided to ground, for example.

Before this, the control unit B (CBB) configures a first vertical receiver stage (VS1) in such a way that it takes the currents fed in from the first vertical driver stage (VD1) again on the other side of the lines. Instead of a configurable first vertical receiver stage (VS1), the first vertical line (Lvl) can also be provided with a suitable terminating resistor, for example to ground.

The first horizontal shielding line (SH1), the first horizontal line (LH1) and the second horizontal shielding line (SH2) preferably form a tri-plate line that is as free as possible from joints. The control unit B (CBB) configures the first horizontal receiver stage (HS1) preferably during the generation of the circularly polarized magnetic field at the location of the first quantum dot (NV11), preferably in such a way that the triplate line consists of the first horizontal shielding line (SH1), the first horizontal line (LH1) and second horizontal shielding line (SH2) is terminated by the first horizontal receiver stage (HS1) with the characteristic impedance of the triplate line in order to avoid back reflections. If the photocurrent of the first quantum dot (NV11) is to be read out via the horizontal lines, the control unit B (CBB), for example, configures the first horizontal receiver stage (HS1) so that the terminating resistance is as high as possible. The first horizontal driver stage (HD1) then applies the extraction voltage (V _ext ) between the first horizontal shield line (SH1) and the second horizontal shield line (SH2) and detects the value of the flowing photocurrent of the first quantum dot (NV11) and typically gives the so determined value to the control device (pC), which processes the value and possibly makes the result of this further processing available, for example via a data bus (DB). The second horizontal shielding line (SH2), the second horizontal line (LH2) and the third horizontal shielding line (SH3) preferably form a tri-plate line that is as free as possible from joints. The control unit B (CBB) configures the second horizontal receiver stage (HS2) preferably during the generation of the circularly polarized magnetic field at the location of the second quantum dot (NV12), preferably in such a way that the triplate line consists of the second horizontal shielding line (SH2), the second horizontal line (LH2) and third horizontal shielding line (SH3) is terminated by the second horizontal receiver stage (HS2) with the characteristic impedance of the triplate line in order to avoid back reflections. If the photocurrent of the second quantum dot (NV12) is to be read out via the horizontal lines, the control unit B (CBB), for example, configures the second horizontal receiver stage (HS2) so that the terminating resistance is as high as possible. The second horizontal driver stage (HD2) then applies the extraction voltage (V _ext ) between the second horizontal shield line (SH2) and the third horizontal shield line (SH3) and detects the value of the flowing photocurrent of the second quantum dot (NV11) and typically outputs the so determined value to the control device (pC), which processes the value and possibly makes the result of this further processing available, for example via a data bus (DB).

The third horizontal shielding line (SH3), the third horizontal line (LH3) and the fourth horizontal shielding line (SH4) preferably form a tri-plate line that is as free as possible from joints.

The control unit B (CBB) configures the third horizontal receiver stage (HS3) preferably during the generation of the circularly polarized magnetic field at the location of the third quantum dot (NV13), preferably in such a way that the triplate line consists of the third horizontal shielding line (SH3) and the third horizontal line (LH2) and fourth horizontal shielding line (SH4) through the third horizontal receiver stage (HS3) with the characteristic impedance of the triplate line in order to avoid back reflections. If the photocurrent of the third quantum dot (NV11) is to be read out via the horizontal lines, the control unit B (CBB), for example, configures the third horizontal receiver stage (HS3) so that the terminating resistance is as high as possible. The third horizontal driver stage (HD3) then applies the extraction voltage (V _ext ) between the third horizontal shield line (SH3) and the fourth horizontal shield line (SH4) and detects the value of the flowing photocurrent of the third quantum dot (NV13) and typically gives the so determined value to the control device (pC), which processes the value and possibly makes the result of this further processing available, for example via a data bus (DB). The first vertical shielding line (SV1), the first vertical line (LV1) and the second vertical shielding line (SV2) preferably form a tri-plate line that is as free as possible from joints. The

Control unit B (CBB) configures the first vertical receiver stage (VS1) preferably during the generation of the circularly polarized magnetic field at the location of one or more of the quantum dots (NV11, NV12, NV13), preferably in such a way that the triplate line from the first vertical

Shielding line (SV1), first vertical line (LV1) and second vertical shielding line (SV2) through the first vertical receiver stage (VS1) is terminated with the characteristic impedance of the triplate line in order to avoid back reflections. If the photocurrent of one or more of the quantum dots (NV11, NV12, NV13) is to be read out via the vertical lines, the control unit B (CBB), for example, configures the first vertical receiver stage (VS1) so that the terminating resistance is as high as possible. The first vertical driver stage (VD1) then applies the extraction voltage (V _ext ) between the first vertical shield line (SV1) and the second vertical shield line (SV2) and records the value of the flowing photo current of the active quantum dots of the quantum dots (NV11, NV12, NV13) ) and typically forwards the value determined in this way to the control device (PC), which processes the value and, if necessary, provides the result of this further processing, for example via a data bus (DB).

Furthermore, the exemplary system in FIG. 80 has a pump radiation source (PLI) for pump radiation (LB) with the pump radiation _wavelength (1 _rGhr ). By means of a light source driver (LEDDR) and the pump radiation source (PLI), the control device (pC) can control the paramagnetic centers (NV1) or groups (NVC) of paramagnetic centers (NV1) of the quantum dots (NV11, NV12, NV13) with pump radiation (LB) of the Irradiate pump radiation _wavelength (l _rGhr ). During this irradiation with this with pump radiation (LB) of the pump radiation _wavelength (l _rGhr ), _{photoelectrons are generated} in the paramagnetic centers (NV1) or the groups (NVC) of paramagnetic centers (NV1) of the quantum dots (NV11, NV12, NV13) depending on the local value of the magnetic flux density B and / or depending on the local value of the other parameters already mentioned such as pressure P, temperature q, acceleration a, gravitational field strength g, electrical flux density D, intensity of the irradiation with ionizing radiation etc. or their integrals and / or time derivatives generated by the first horizontal receiver stage (HS1) and / or the second horizontal receiver stage (HS2) and / or the third horizontal receiver stage (HS3) and / or the first vertical receiver stage (VS1) by applying an extraction field as respective photocurrent of a quantum bit (QUB11, QUB12, QUB13) for example can be extracted via the connected shielding lines. In the following we describe as an example, such as the photocurrent of the paramagnetic center (NV1) or the

paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) of the first quantum bit (QUB11) can be generated and extracted. The

Control unit (pC) causes the pump radiation source (PLI) to emit pump radiation (LB) with the pump radiation _wavelength (l _rGhr ), which is preferably directed to the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups ( NVC)

paramagnetic centers (NV1) of the first quantum bit (QUB11) and of the second quantum bit (QUB12) and of the third quantum bit (QUB13) falls. We are increasing by way of example

For purposes of illustration, indicate that the substrate (D) is made of diamond and that the paramagnetic centers (NV1) are NV centers. Thus the fluorescent state of the NV centers is the NV state. A first selection option arises from the fact that the control device (pC) by means of the control unit A (CBA) and by means of the first horizontal driver stage (HD1) has the first horizontal line (LH1) at a positive potential compared to the substrate (D) of the quantum bits (QUB11 , QUB12, QUB13). The control device (pC) uses the control unit A (CBA) and the first vertical driver stage (VD1) to ensure that the first vertical line (LV1) has a positive potential with respect to the substrate (D) of the quantum bits (QUB11, QUB12, QUB13) lies. This makes the N ^_ state the preferred state of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups of paramagnetic centers (NV1) of the first quantum bit (QUB11). The control device (pC) causes by means of the

Control unit A (CBA) and by means of the second horizontal driver stage (HD2) that the second horizontal line (LH2) is at a strongly negative potential compared to the substrate (D) of the quantum bits (QUB11, QUB12, QUB13). The control device (pC) uses the control unit A (CBA) and the third horizontal driver stage (HD3) to ensure that the third horizontal line (LH3) has a strongly negative potential compared to the substrate (D) of the quantum bits (QUB11, QUB12, QUB13 ) lies. In this way, the second horizontal line (LH2) and the third horizontal line (LH3) are brought to a strongly negative potential with respect to the substrate (D). As a result, the paramagnetic centers (NV1) or the groups (NVC) of paramagnetic centers (NV1) of the second quantum bit (QUB12) and the third quantum bit (QUB13) preferably leave the N state. This hampers the production of photoelectrons through the paramagnetic centers (NV1) or the groups (NVC) of paramagnetic centers (NV1) of the second quantum bit (QUB12) and the third quantum bit (QUB13). completely prevented. To get the photoelectrons of the paramagnetic center (NV1) or the

To be able to suck off paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) of the first quantum bit (QUB11), causes the

Control device (pC), for example, the first vertical receiver stage (VS1) between the first vertical shielding line (SV1) and the second vertical shielding line (SV2)

Apply an extraction voltage that differs from 0V, thereby starting a photo current in the form of the extracted photoelectrons of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) of the first quantum bit (QUB11) to flow through the first horizontal shielding line (SV1) and the second horizontal shielding line (SV2). The magnitude of this photocurrent typically depends on the magnetic flux density B at the location of the paramagnetic center (NV1) or the

paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) of the first quantum bit (QUB11) and / or of other physical parameters, such as electrical flux density D, acceleration a, gravitational field strength g, rotational speed o, intensity a Exposure to ionizing radiation etc. The paramagnetic centers (NV1) or the groups (NVC) of paramagnetic centers (NV1) of the second quantum bit (Q.UB12) and of the third quantum bit (QUB13) do not contribute significantly to this photocurrent, since the preferred state of these paramagnetic centers (NV1 ) or groups (NVC) of paramagnetic centers (NV1) of the second quantum bit (Q.UB12) or the third quantum bit (Q.UB13) is not the NV state, since the second horizontal line (LH2) and the third horizontal line (LH3) are negatively charged. The first vertical receiver stage (VS1) is preferably provided with means, for example a current measuring device, for detecting the photocurrent and for converting the value of the photocurrent into a receiver output signal (SO), which then turns into a sensor output signal in the sensor devices as shown here (out) can be further processed. The control unit (pC) can, for example, emulate the sensor systems presented here and transmit the value (sO) of the sensor output signal to a higher-level unit via a data bus (DB).

Fig. 81

FIG. 82 shows an exemplary two-bit quantum register with a common first horizontal line (LH1), for example three vertical shielding lines (SV1, SV2, SV3) and one horizontal shielding line (SH1) and two quantum dots (NV11, NV12) each with a paramagnetic one Center (NV1) or several paramagnetic centers (NV1) or a group or several groups (NVC) of paramagnetic centers (NV1). If the distance between the two is sufficiently small

Quantum dots (NV11, NV12) form an exemplary quantum register with a second vertical shielding line (SV2) and with a first vertical shielding line (SV1) and with a third vertical shielding line (SV3). In this respect, the roles of the horizontal and vertical functional parts are reversed compared to the previous FIG. 81.

A homogeneous quantum register (QUREG) or just quantum register (QUREG) for short only comprises quantum dots (NV11, NV12) of one quantum dot type. Such a quantum register preferably comprises a first quantum bit (QUB11) and at least one second quantum bit (QUB12). A chain of such quantum registers (QUB) is the essential part of the quantum bus (QUBUS) explained below, which allows the transport of dependencies. The property of the flomogeneity of the quantum register (QUREG) is expressed according to the proposal such that the first quantum dot type of the first quantum dot (NV11) of the first quantum bit (QUB11) of the

Quantum register (QUREG) is equal to the second quantum dot type of the second quantum dot (NV12) of the second quantum bit (QUB12) of the quantum register (QUREG). For example, the first quantum dot type can be an NV center in diamond as a substrate and the second quantum dot type can likewise be an NV center in the same substrate.

Typically, the substrate (D) is common to the first quantum bit (QUB11) of the quantum register (QUREG) and the second quantum bit (QUB12) of the quantum register (QUREG). In the following, the quantum dot (NV1) of the first quantum bit (QUB11) of the

Quantum register (QUREG) called the first quantum dot (NV11) and the quantum dot (NV1) of the second quantum bit (QUB12) of the quantum register (QUREG) called the second quantum dot (NV12). The first quantum dot (NV11) comprises a paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NVC) of paramagnetic centers (NV1). The second quantum dot (NV12) comprises a paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NVC) of paramagnetic centers (NV1). Similarly, for better clarity, the horizontal line (LH) of the first quantum bit (QUB11) of the quantum register (QUREG) is referred to below as the first horizontal line (LH1) and the horizontal line (LH) of the second quantum bit (QUB12) of the quantum register ( QUREG) referred to as the second horizontal line (LH2). Likewise, the vertical line (LV) of the first quantum bit (QUB1) is hereinafter referred to as the first vertical Line (LV1) and the vertical line (LV) of the second quantum bit (QUB2) in the

Hereinafter referred to as the second vertical line (LV2). It makes sense if, for example, the first horizontal line (LH1) is identical to the second horizontal line (LH2). Alternatively, it makes sense if, for example, the first vertical line (LV1) is identical to the second vertical line (LV2).

To fulfill the intended function, the quantum register (QUREG) should be built so small that the magnetic field of the second quantum dot (NV12) of the second quantum bit (QUB12) of the quantum register (QUREG) has the behavior of the first quantum dot (NV11) of the first quantum bit (QUB11) of the quantum register (QUREG) at least temporarily and / or that the magnetic field of the first quantum dot (NV11) of the first quantum bit (QUB11) influences the behavior of the second quantum dot (NV12) of the second quantum bit (QUB12) at least temporarily.

For this purpose, the spatial distance (spl2) between the first quantum dot (NV11) of the first quantum bit (QUB11) of the quantum register (QUREG) and the second quantum dot (NV12) of the second quantum bit (QUB12) of the quantum register (QUREG) is so small that the Magnetic field of the second quantum dot (NV12) of the second quantum bit (QUB12) of the quantum register (QUREG) influences the behavior of the first quantum dot (NV11) of the first quantum bit (QUB11) of the quantum register (QUREG) at least temporarily, and / or that the magnetic field of the first quantum dot (NV12) of the first quantum bit (QUB11) of the quantum register (QUREG) influences the behavior of the second quantum dot (NV12) of the second quantum bit (QUB12) of the quantum register (QUREG) at least temporarily. For this purpose, the second distance (spl2) between the first quantum dot (NV11) of the first quantum bit (QUB11) of the quantum register (QUREG) and the second quantum dot (NV12) of the second quantum bit (QUB12) of the quantum register (QUREG) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm, and / or the second distance ( spl2) between the first quantum dot (NV11) of the first

Quantum bits (QUB11) of the quantum register (QUREG) and the second quantum dot (NV12) of the second quantum bit (QUB12) of the quantum register (QUREG) between 30 nm and 2 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm.

Such a quantum register can be chained. The previously described two-bit quantum register was lined up along the horizontal line (LH), the two quantum bits (QUB11, QUB12) is common. Instead of a horizontal line-up, a vertical line-up along the vertical line is also conceivable. The horizontal and vertical lines then swap functions. A two-dimensional stringing together is also conceivable, which corresponds to a combination of these possibilities.

Instead of a two-bit quantum register (QUREG), it is also conceivable to string n quantum bits (QUB11 to QUBln). A three-bit quantum register is described here as an example, which is continued along the horizontal line (LH) as an example. The same applies to the following quantum bits (QUB14 to QUBln). The quantum register can of course also be expanded in the other direction by m quantum bits (QUB0 to QUB (m-l)). To simplify the description, the text presented here is limited to positive values of the indices from 1 to n. The principles described below for a three-bit quantum register can therefore be transferred to a quantum register with more than three quantum bits. Therefore, these principles are no longer carried out for a multi-bit quantum register, since they will be readily apparent to those skilled in the art from the following description of a three-bit quantum register. Such

Multi-bit quantum registers are expressly included in the claim.

A three-bit quantum register is then a quantum register, as has been described above, with at least one third quantum bit (QUB13) in accordance with the preceding description. The first quantum dot type of the first quantum dot (NV11) of the first quantum bit (QUB11) and the second quantum dot type of the second quantum dot (NV12) of the second quantum bit (QUB12) are then preferably the same as the third quantum dot type of the third quantum dot (NV13) of the third quantum bit (QUB13) .

In such an exemplary three-bit quantum register, the substrate (D) is preferably common to the first quantum bit (QUB11) and the second quantum bit (QUB12) and the third quantum bit (QUB13). The quantum dot (NV1) of the third quantum bit (QUB13) is referred to below as the third quantum dot (NV13). The horizontal line (LH) of the third quantum bit (QUB13) is preferably the said first horizontal line (LH1) and thus together with the horizontal line (LH) of the second quantum bit (QUB12) and the horizontal line (LH) of the first quantum bit (QUB11 ). The vertical line (LV) of the third quantum bit (QUB13) is referred to below as the third vertical line (LV3). Instead of this alignment of the quantum bits along the first horizontal line (LH1), as already mentioned, other alignments are conceivable. In order to enable the transport of dependencies on quantum information, it makes sense if the magnetic field of the second quantum dot (NV12) of the second quantum bit (QUB12) can at least temporarily influence the behavior of the third quantum dot (NV13) of the third quantum bit (QUB13) and / or if the magnetic field of the third quantum dot (NV13) of the third quantum bit (QUB13) has the behavior of the second quantum dot (NV12) of the second

Quantum bits (QUB12) can at least temporarily influence. This creates what is referred to below as the quantum bus and is used to transport dependencies of the

Quantum information of the quantum dots of the resulting quantum bus (QUBUS) is used.

To enable these dependencies, it makes sense if the spatial distance (sp23) between the third quantum dot (NV13) of the third quantum bit (QUB13) and the second quantum dot (NV12) of the second quantum bit (QUB12) is so small that the magnetic field of the second quantum dot (NV12) of the second quantum bit (QUB12) the behavior of the third

Quantum dot (NV13) of the third quantum bit (QUB13) can at least temporarily influence, and / or that the magnetic field of the third quantum dot (NV13) of the third quantum bit (QUB13) influence the behavior of the second quantum dot (NV12) of the second quantum bit (QUB12) at least temporarily can.

To achieve this coupling, it makes sense again if the spatial distance (sp23) between the third quantum dot (NV13) of the third quantum bit (QUB13) and the second quantum dot (NV12) of the second quantum bit (QUB12) is less than 50 nm and / or less than 30 nm and / or less than 20 nm and / or less than 10 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm and / or if the spatial distance ( sp23) between the third quantum dot (NV13) of the third quantum bit (QUB13) and the second quantum dot (NV12) of the second quantum bit (QUB12) between 30 nm and 2 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2 nm.

As already explained above, the quantum bits (QUB) of the quantum register (QUREG) are preferably arranged in a one-dimensional grid. An arrangement in a two-dimensional grid is possible, but not so advantageous, since the current equations can then no longer be solved clearly without further ado.

The quantum bits (QUB) of the quantum register (QUREG) are therefore preferred in a one- or two-dimensional grid of unit cells of arrangements of one or more Quantum dots (NV1) arranged with a second distance (spl2) as a lattice constant for the distance between the respective unit cells.

The additional shielding lines (SV1, SV2, SV3, SH1) enable further currents to be fed in to improve the selection of the quantum dots while the

Operations by energizing the vertical lines (LV1, LV2) and the horizontal line (LH1). Now, in addition to explaining the readout process, a first horizontal screen line (SH1) is drawn in parallel to the first horizontal line (LH1). Since it is a

The cross-sectional image is the corresponding second horizontal shielding line (SH2) which on the other side of the first horizontal line (LH1) also runs parallel to this, not shown. The shielding lines are electrically connected to the substrate (D) in this example by means of contacts (KV11, KH11, KV12, KH12, KV13). If an extraction field is now applied between two parallel shielding lines by applying an extraction voltage between them, a measurable current flow occurs when the quantum dots (NV1, NV2) are irradiated with pump radiation (LB) and when the paramagnetic centers (NV1) of these quantum dots ( NV11, NV12) are in the correct quantum state, which is significantly influenced by the potentials of the first horizontal line (LH1), the first vertical line (LV1) and the second vertical line (LV2). Further information can be found in Petr Siyushev, Milos Nesladek, Emilie Bourgeois, Michal Gulka, Jaroslav Hruby, Takashi Yamamoto, Michael Trupke, Tokuyuki Teraji, Junichi Isoya, Fedor Jelezko, "Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond ", Science 363, 728-731 (2019) February 15, 2019.

In FIG. 81, the paramagnetic centers (NV1) of the quantum dots (NV11, NV12) are each part of several nuclear electron quantum registers. This means that the paramagnetic centers (NV1) or groups (NVC) of paramagnetic centers (NV1) of the quantum dots (NV11, NV12) each have one or more core centers (CI) in the example in FIG. 81

Core centers (CI) or a group or groups (CIC) of core centers (CI) can be coupled, i.e. interlocked. The signals required for this are also fed in via the first horizontal line (LH) and the vertical lines (LV1, LV2, LV3). Since the

Entanglement range of the paramagnetic centers (NV1) is usually greater than that of the core centers (CI), for example, two core centers (CI) of different core-electron quantum registers (CEQUREG1, CEQUREG2) using the paramagnetic centers (NV1) as ancilla quantum bits with each other be entangled. In this context, the German patent application DE 10 2020 101 784.7 with the same priority as the application presented here, which has not yet been published at the time of this application. The first quantum dot (NV11) of the first quantum ALU (QUALU1) can interact in the example of Figure 81 with a first nuclear quantum dot (Clli) of the first quantum ALU (QUALU1) if the first vertical line (LV1) and the first horizontal line (LH1) with a first vertical current (IV1) and a first horizontal current (IH1) are energized, which with a first electron-nuclear radio wave resonance frequency (f _R w _E ci_i) for the first quantum ALU (QUALU1) or a first nuclear-electron microwave resonance frequency ( f _M wc _Ei _i) are modulated for the first quantum ALU (QUALU1). This first electron nuclear radio wave resonance frequency (f _R w _E ci_i) for the first quantum ALU (QUALU1) and this first nuclear electron microwave resonance frequency (f _M wc _Ei _i) for the first quantum ALU (QUALU1) are preferably performed once in an initialization step measured an OM DR measurement. The measured values are stored in a memory of the control computer (pC), which it retrieves when the corresponding core electron quantum register (CEQUREG1, CEQUREG1) is to be controlled. The control computer (pC) then sets the frequencies

accordingly.

The first quantum dot (NV11) of the first quantum ALU (QUALU1) can interact in the example of FIG. 81 with a second nuclear quantum dot (Cll ₂ ) of the first quantum ALU (QUALU1) if the first vertical line (LV1) and the first horizontal line (LH1 ) are energized with a first vertical current (IV1) and a first horizontal current (IH1) which have a second electron-nuclear radio wave resonance frequency (f _R EC2_i) for the first quantum ALU (QUALU1) or a second nuclear-electron microwave resonance frequency ( f _M wcE2_i) are modulated for the first quantum ALU (QUALU1). This second electron-nuclear radio wave resonance frequency (f _R EC2_i) for the first quantum ALU (QUALU1) and this second nuclear-electron microwave resonance frequency (f _M wcE2_i) for the first quantum ALU (QUALU1) are preferred in said

Initialization step measured once by another OMDR measurement. The measured values are stored in a memory of the control computer (pC), which it calls up when the corresponding core electron quantum register (CEQUREG) is to be controlled. The control computer (pC) then sets the frequencies accordingly.

The first quantum dot (NV11) of the first quantum ALU (QUALU1) can interact in the example of FIG. 83 with a third nuclear quantum dot (Cll ₃ ) of the first quantum ALU (QUALU1) if the first vertical line (LV1) and the first horizontal line (LH1 ) with a first vertical Current (IV1) and a first horizontal current (IH1) are energized, which have a third electron-nuclear radio wave resonance frequency (f _RE C3_i) for the first quantum ALU (QUALU1) or a third nuclear-electron microwave resonance frequency (f _M wc _E 3_i ) are modulated for the first quantum ALU (QUALU1). This third electron nuclear radio wave resonance frequency (f _R w _E C3_i) for the first quantum ALU (QUALU1) and this third nuclear electron microwave resonance frequency (f _M wc _E 3_i) for the first quantum ALU (QUALU1) are preferably unique in the aforementioned initialization step measured by another OMDR measurement. The measured values are stored in a memory of the control computer (pC), which it calls up when the corresponding core electron quantum register (CEQUREG) is to be controlled. The control computer (pC) then sets the frequencies accordingly.

The second quantum dot (NV12) of the second quantum ALU (QUALU2) can interact with a first nuclear quantum dot (CI2i) of the second quantum ALU (QUALU2) if the second vertical line (LV2) and the first horizontal line (LH1) with a second vertical current (IV2) and a first horizontal current (IH1) are energized, which with a first electron-nuclear radio wave resonance frequency (f _R w _E ci_2) for the second quantum ALU (QUALU2) or a first nuclear-electron microwave resonance frequency (f _M wc _E i_2) are modulated for the second quantum ALU (QUALU2). This first electron nuclear radio wave resonance frequency (f _R w _E ci_2) for the second quantum ALU (QUALU2) and this first nuclear electron microwave resonance frequency (f _M wc _Ei _2) for the second quantum ALU (QUALU2) are preferably performed once in an initialization step measured an OMDR measurement. The measured values are stored in a memory of the control computer (pC), which it calls up when the corresponding core electron quantum register (CEQUREG) is to be controlled. The control computer (pC) then sets the frequencies accordingly.

The second quantum dot (NV12) of the second quantum ALU (Q.UALU2) can interact in the example of FIG. 83 with a second nuclear quantum dot (CI2 ₂ ) of the second quantum ALU (Q.UALU2) if the second vertical line (LV2) and the first horizontal line (LH1) with a second vertical current (IV2) and a first horizontal current (IH1) are energized, which with a second electron-nucleus radio wave resonance frequency (f _{R EC} 2_2) for the second quantum ALU (Q.UALU2) or a second nuclear electron microwave resonance frequency (f _M wc _E 2_2) for the second

Quantum ALU (Q.UALU2) are modulated. This second electron-nuclear radio wave _resonance frequency (f _RWEC 2_2) for the second quantum ALU (Q.UALU2) and this second nuclear-electron Microwave resonance frequencies (f _M wc _E 2_2) for the second quantum ALU (QUALU2) are preferably measured once in the aforementioned initialization step by a further OMDR measurement. The measured values are stored in a memory of the control computer (pC), which it calls up when the corresponding core electron quantum register (CEQUREG) is to be controlled. The

The control computer (pC) then sets the frequencies accordingly.

The second quantum dot (NV12) of the second quantum ALU (QUALU2) can interact in the example of FIG. 20 with a third nuclear quantum dot (CI2 ₃ ) of the second quantum ALU (QUALU2) if the second vertical line (LV2) and the first horizontal line (LH1 ) are energized with a second vertical current (IV2) and a first horizontal current (IH1) which have a third electron-nuclear radio wave resonance frequency (f _{R EC} 3_2) for the second quantum ALU (QUALU2) or a third nuclear-electron microwave resonance frequency (f _M wc _E 3_2) are modulated for the second quantum ALU (QUALU2). This third electron-nuclear radio wave resonance frequency (f _R w _EC 3_2) for the second quantum ALU (QUALU2) and this third nuclear-electron microwave resonance frequency (fiviwc _E 3_2) for the second quantum ALU (QUALU2) are preferred in said

Initialization step measured once by another OMDR measurement. The measured values are stored in a memory of the control computer (pC), which it calls up when the corresponding core electron quantum register (CEQUREG) is to be controlled. The control computer (pC) then sets the frequencies accordingly.

Since the range of the coupling of the quantum dots (NV11, NV12) is greater, they can be coupled with one another. The second quantum dot (NV12) of the second quantum ALU

In the example in FIG. 81, (Q.UALU2) can interact with the first quantum dot (NV1) of the first quantum ALU (QUALU1) if the first vertical line (LV1) and the second vertical line (LV2) and the first horizontal line ( LH1) with a first vertical current (I VI) and a second vertical current (IV2) and a first horizontal current (IH1) are energized, which with an Elektronl-Elektron2- microwave resonance frequency (f _M w _EEi 2) for the coupling of the first Quantum dot (NV1) of the first quantum ALU (QUALU1) are modulated with the second quantum dot (NV2) of the second quantum ALU (Q.UALU2). This electron / electron2 microwave resonance frequency (f _M w _EEi 2) for the coupling of the first quantum dot (NV1) of the first quantum ALU (QUALU1) is preferably measured once in the aforementioned initialization step by a further OMDR measurement. The measured values are stored in a memory of the control computer (pC), which this calls up when the corresponding electron-electron quantum register (QUREG) including the first quantum dot (NV1) and the second quantum dot (NV2) should be controlled. The control computer (pC) then sets the frequencies accordingly.

By entangling the core centers with each other or the paramagnetic centers (NV1) with each other or the paramagnetic centers (NV1) with the core centers (CI), completely new parameters of the measurement can be made accessible, since this allows the photocurrent and / or the fluorescence radiation of the paramagnetic Centers (NV1) depend on these parameters in a completely new way and sensitivity.

Fig. 82

82 corresponds to FIG. 4 with the difference that instead of the fluorescence radiation (FL) of the paramagnetic centers (NV1) of the sensor element, the photocurrent that flows through the paramagnetic center or centers (NV1) when irradiated with pump radiation (LB) is dependent on the intensity (l _pmp ) of the pump radiation (LB) and is generated as a function of the magnetic flux density B and possibly as a function of further physical parameters, via contacts to the substrate (D) with the paramagnetic center (NV1) or the paramagnetic center Centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) is recorded and evaluated. In contrast to FIG. 4, the substrate (D) of the sensor element is now connected directly to the first amplifier (VI) via the receiver output signal (SO), the first

Amplifier (VI) sucks off the photocurrent generated by the paramagnetic centers (VI). The evaluation and control methods that have been explained in various places in this document can be combined with this type of reading out of the paramagnetic centers (NV1). For the sake of simplicity, they are not explained further here. Reference is made here to Figures 78, 79 and 81.

Fig. 83

FIG. 83 shows the exemplary structure of a further proposed sensor system. It comprises a transmission signal (S5) and a pump radiation source (PLI). This pump radiation source (PLI) preferably generates an optimal excitation for one or more paramagnetic centers (NV1) in a diamagnetic material (MPZ) of a sensor element, in particular in

Dependence on the transmission signal (S5) without destroying, reloading or putting the paramagnetic center or centers (NV1) or the group or groups (NVC) of NV centers as paramagnetic centers (NV1) into a metastable state. Preferably has the Pump radiation (LB) in the case of NV centers as paramagnetic centers (NV1) a pump radiation _wavelength (l _rGTΐr ) between 500-600 nm in order to _excite the NV centers in the diamond or diamonds as material (MPS) of the sensor element. Alternatively, a second filter (F2) can be used to filter out the optimal wavelengths for the excitation from a broader electromagnetic spectrum of the pump radiation source (PLI). The pump radiation (LB) is then preferably to the diamagnetic material (MPZ) within the sensor element, which may otherwise be or may include the diamagnetic material (MPZ), with the paramagnetic center (s) (NV1) and / or a or several groups (NVC) of NV centers as paramagnetic centers (NV1). It is preferably the

Sensor element around an HD NV diamond with high NV center density. It is preferably a diamond artificially produced by means of high pressure and high temperature with a content of NV centers in a range from 0.1 ppm to 500 ppm. Diamonds that were created with high pressure and high temperature are also called HPHT diamonds for high-pressure-high-temperature. In a further embodiment, for example, a polycrystalline diamond configuration with one or more NV centers as paramagnetic centers (NV1) and / or one or more groups (NVC) of NV centers as paramagnetic centers (NV1) can be used. Furthermore, any accumulation of small diamond-containing material, for example nanocrystalline diamond powder or diamond granules, which are each embedded in an optically transparent carrier material such as glass or plastic and which are preferably all or some of the HD-NV diamonds, can be used. The prerequisite is that the amount of paramagnetic centers (NV1) is available in sufficient form so that fluorescence radiation (FL) with sufficient intensity (l _fl ) of fluorescence radiation (FL) is generated, for example to detect the vibrations of a vibratory mechanical system and / or, for example, to determine the position of a movable mechanical system. The advantage of using granules or nanocrystalline powder is the stochastic distribution of the orientations of the crystals, which leads to the sensitivity curve in FIG. The mechanical and / or electromechanical vibrations can affect very high frequencies, since the possible sampling rate when recording with paramagnetic centers (NV1) is very high. The fluorescence radiation (FL) is preferably separated from the pump radiation (LB) with the aid of a first filter (F1) and converted into an electrical radiation receiver (PD) which is adapted to the fluorescence radiation wavelength (1h) of the fluorescence radiation (FL)

Receiver output signal (SO) converted. The arrangement of the pump radiation source (PLI) and the The radiation receiver (PD) to the sensor element with the material (MPZ) with the paramagnetic center (s) (NV1) is preferably selected so that an optimal coupling of the pump radiation (LB) into the paramagnetic center (NV1) or the paramagnetic centers ( NV1) or the flu (NVC) or groups (NVC) of paramagnetic centers (NV1) can occur. An arrangement with a pump radiation source (PLI) and radiation receiver (PD) on one side and the sensor element with the material (MPZ) with the paramagnetic center or centers (NV1) on the other side can also be used. The arrangement is preferably chosen so that optimal illumination of the sensor element with the material (MPZ) with the

paramagnetic centers (NV1) by a high intensity (l _pmp ) of the pump radiation (LB) and an optimal detection of the fluorescence radiation (FL) is achieved with simultaneous high variation of a field due to the oscillating system (MQ1 + MS). Optionally, a second stationary field source (MQ2) can be used to increase the sensitivity of the sensor system to changes in the fluorescence radiation (FL), for example through a magnetic bias flux density (B ₀ ) and an operating point near the magnetic flux density (B _opt ) the maximum dependence of the intensity (l _{f |} ) of the fluorescence radiation (FL) on the magnetic flux density (B). The material with paramagnetic centers (NV1), diamond with NV centers and the magnetic system operating point in the form of the magnetic ones are preferably used in the sensor element

Flux density B in the form of the mean sum of the magnetic flux density Bi of the first field source (MQ1) and the magnetic flux density B _{2 of} the second field source (MQ2) in a range from 0.1 mT- 50mT. The receiver output signal (SO) that the radiation receiver (PD) in

Generated as a function of the fluorescence radiation (FL), is fed to the control and evaluation unit (LIV). The control and evaluation unit (LIV) preferably comprises a device as presented here.

Fig. 84

FIG. 84 describes an alternative structure of an exemplary sensor system with electronic instead of optical readout, in which the sensor unit consisting of the sensor element with the material (MPZ) with the paramagnetic center or centers (NV1), the pump radiation source (PLI) and the first filter ( Fl) and radiation receiver (PD) with an optional second filter (F2) to which a vibrating mechanical system (MS), for example a vibrating string of a

Musical instrument, is coupled. A first stationary field source (MQ1) for an electronic or magnetic field with a reference system in the same reference system as the sensor element is preferably used located second field source (MQ2) for a further superimposed electric or magnetic field combined in order to optimize a fluorescence radiation (FL) in relation to the oscillating mechanical system (MS). The evaluation of the receiver output signal (SO) of the radiation receiver (PD) is preferably achieved again in the simplest case via a lock-in amplifier.

The stationary first field source (MQ1) excites the oscillating mechanical system (MS), which can be ferromagnetic, for example, with an electrical field strength H. In the example of FIG. 84, the second field source (MQ2) then provides this Bias field with the bias flux density B ₀ so that the magnetic working point of the sensor element at the flux density (B _opt ) of the optimal magnetic working point of the sensor element with the paramagnetic centers (NV1) and / or the group (NVC) paramagnetic centers (NV1) and / or the groups (NVC) of paramagnetic centers (see Figure 28). The characteristic of the intensity (l _{f |} ) of the fluorescence radiation (FL) as a function of the magnetic flux density B shown in FIGS. 27 and 28 also exists in an analogous manner for the dependence of the paramagnetic center (NV1) and / or the paramagnetic centers (NV1) and / or the group (NVC) of paramagnetic centers (NV1) and / or the groups (NVC) of paramagnetic centers (NV1) of the magnetic flux density B. For this reason, FIGS. 27 and 28 have not been duplicated.

In the exemplary case of electrostatic fields, the first field source (MQ1) and the second field source (MQ2) would then be combinations of one electrode and one voltage source each, with the aid of a second voltage source and a second electrode that the second field source (MQ2) in In this exemplary case, the sensor element is placed on a second potential with respect to a reference potential, e.g. ground, and with the aid of a first voltage source and a first electrode, which together form the first field source (MQ1), the exemplary mechanical oscillating element (MS) a first potential is placed against a reference potential, for example ground. The mechanical oscillating element (MS) is preferably electrically conductive in this case. A modulated electric field strength E is then generated by an oscillation of the mechanical oscillating element (MS), the modulated magnetic excitation H of which, for example, then as a modulated magnetic flux B through the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or . the groups (NVC) paramagnetic centers (NV1) can be measured by modulating their fluorescence radiation (FL) and / or modulating their photoelectron flow.

Fig. 85

FIG. 85 shows an example of an application of a proposed method in which the light-sensitive radiation receiver (PD) is replaced by a conductive layer that is applied with a contact (KNT) to the material with paramagnetic centers (NV1) of the sensor element and is capable of is to extract, collect and determine the photoelectrons of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group (NVC) or the groups (NVC) of paramagnetic centers (NV1). Particular advantages result when the layer has an ohmic resistance to a diamagnetic material (MPZ) with a high sheet resistance, preferably diamond with NV centers. If the material has a low resistance, a pn structure or a metal with a Schottky junction is preferably used to isolate the layer from the material. Thin diamond layers or small diamond structures are preferably used in order to minimize shielding from charged defect centers. In order to generate photoelectrons by double excitation, the intensity (l _pmp ) of the pump radiation (LB) in a pulsed beam is the

Pump radiation (LB) preferably achieved by reducing the pulse lengths of the pump radiation pulses while maintaining the same intensity (I _pmp ) of the pump radiation (LB) and at the same time _increasing the amplitude of the intensity (I _pmp ) of the pump radiation _pulses as much as possible.

Fig. 86

FIG. 86 shows the material (MPZ) with paramagnetic centers (NV1) separated by a first optical waveguide (LWL1) from the pump radiation source (PLI) with the optional second filter (F2) and separated by a second optical waveguide (LWL2) from the radiation receiver (PD ) with a first filter (Fl). The respective optical waveguides (LW1, LW2) are preferably selected in such a way that they provide an optimal transmission power for the respective different tasks and wavelengths, for the pump radiation (LB) of the pump radiation _source (PLI) at a pump radiation _wavelength l _rpir and for the fluorescence radiation (FL) des or the

paramagnetic centers (NV1) at the fluorescence radiation wavelength lh. Fig. 87

FIG. 87 corresponds to the structure of FIG. 83 with only one common optical waveguide (LWL). In this construction, an optical waveguide (LWL) with a high transmission power in a wavelength range that covers the radiation for the pump radiation (LB) and the

Includes fluorescent radiation (FL). A dichroic mirror (DCS) is preferably used in this structure to decouple the fluorescence radiation (FL) and to couple the

To enable pump radiation (LB) in the common optical fiber (LWL).

Fig. 88

FIG. 88 shows the embodiment according to the method according to the invention with a number n oscillating subsystems (MS _!, MS ₂ ... MS _n ) of a mechanical oscillating system (MS) with n corresponding to the respective subsystem of the n subsystems (MSi to MS _n ) coupled first field sources for magnetic or electrostatic fields (MGli, MG1 ₂ , ...., MGl _n ) and n

Sensor elements with a respective diamagnetic material (MPZi, MPZ ₂ ,., MPZ _n ) with respective paramagnetic centers (NV1). The n sensor elements with the paramagnetic centers (NV1) and / or groups (NVC) of paramagnetic centers are coupled to a pump radiation source (PLI) for generating the pump radiation (LB) by means of a first optical waveguide (LWL1) and by means of a second optical waveguide (LWL2) for Reading out the

Fluorescence radiation (FL) coupled. First wave couplers (LWK1) each couple pump radiation (LB) out of the first optical waveguide (LWL1) and guide these respectively decoupled

Pump radiation via a respective optical waveguide branch piece of the first optical waveguide (LWL1) to a respective sensor element of the n sensor elements assigned to this respective first wave coupler (LWK1). The fluorescence radiation (FL) of the respective optical waveguide branch of the second is transmitted via a respective optical waveguide branch piece of the second optical waveguide (LWL) and a second respective wave coupler (LWK2) assigned to this respective optical waveguide branch piece of the second optical waveguide (LWL)

The respective sensor element of the n sensor elements assigned to the optical waveguide (LWL) is detected and fed into the second optical waveguide (LWL2), where it is typically summed up with the fluorescence radiation (FL) of the fluorescence radiation (FL) of the other sensor elements, recorded in an analog manner, and the radiation receiver (PD ) are essentially fed together via the first filter (F1). The radiation source (PLI) and the radiation receiver (PD) are controlled or read out by a control and readout unit (LIV) as described, for example, in FIG.

In order to achieve optimal control of the respective sensor elements, preference is given to electrostatic and / or magnetic second fields in addition to the alternating first fields generated by the oscillating mechanical subsystems (MSi, MS ₂ , .... MS _n )

typically n additional second field sources (MQ2i, MQ2 ₂ , .... MG2 _n ) superimposed. The magnetic flux density B is preferably adjusted so that the sensor system optimally reads out the signals of the acoustic and / or other mechanical vibrations of the mechanically oscillating system (MS) or the mechanically oscillating subsystems (MSi, MS ₂ , .... MS _n ) allowed.

Fig. 89

FIG. 89 shows an exemplary electric guitar (GT) as an application of a proposed device. The sensor element with the paramagnetic centers (NV1) is preferably attached below the strings of the electric guitar (GT). HD-NV diamond with a high content of NV centers is preferably used as the material of the sensor elements with the paramagnetic centers (NV1). The diamond is preferably cut as the most beautiful, for example a brilliant, and, due to the high NV center content, typically shows a bright, deep red color during operation. The diamond in question is preferably let into the guitar body.

One or more, for example two, light guides (LWL, LWL1, LWL2) are preferably used for introducing the pump radiation (LB) into the sensor elements and for reading out the

Fluorescence radiation (FL), for example, guided below the relevant sensor elements, as here the relevant diamond, through the body of the electric guitar (GT) in a cavity. The pump radiation source (s) (PLI) and the one or more are preferably located in this cavity

light-sensitive radiation receiver (PD). For example, a sensor system concept corresponding to one of the preceding statements is conceivable. The acoustically equivalent sensor output signals (SO) or signals derived therefrom are preferably mixed together to form a signal via a 6mm jack socket on the top of the body of the electric guitar (GT) and made available for further signal processing and, if necessary, processing. In an optional embodiment, the acoustically equivalent information of these sensor output signals or information derived from them via a electromagnetic waves can be transmitted wirelessly according to common standards (WLAN, Bluetooth). Such an electric guitar is just one example of an application of the concepts presented here. The principles presented here can generally also be transferred to the other applications in an analogous manner and are included in the description and use.

Fig. 90

shows the absorption spectrum of a proposed diamond recorded at room temperature. The absorption is in an arbitrary unit related to a freely chosen one

Reference transmission shown as a function of the wavelength in nm.

The core idea that is presented here with regard to the production of HD-NV diamonds and jewelry diamonds is to prevent the flaws from agglomerating in situ during the irradiation.

A first measure is the use of n-doped diamond. This n-doping can be achieved, for example, by doping the diamond with sulfur. A similar effect of an n-doping is achieved if the diamond blank (s) comprise nitrogen atoms in the form of pi centers. This typically manifests itself in a yellow color of the diamond blanks. It has been shown that the intensity of the yellow color should be rather weak. Coloring the diamond blanks prior to irradiation according to the GIA standard "fancy yellow" is, however, much too strong and leads to practically black stones, the blackness being the result of an excessively extreme red color.

The GIA determination rules for the coloring of jewelery diamonds can be found on the internet at https://www.gia.edu/fancy-color-diamond- quality-factor, for example, at the time of filing this patent application.

The yellow diamond blanks preferably have the GIA color grade “fancy” or better “fancy light” or even better “light” or even better “very light.” The degree of later reddening then decreases when using diamond blanks with a yellow coloration corresponding to the GIA shade "fancy" to diamond blanks with a yellow coloration corresponding to the GIA tint "very light". The yellow diamond blanks are colored so strongly red according to the GIA coloring level "fancy" after the coloring process that they appear practically black then only for

Sensor elements in devices, in which the evaluated by the device Fluorescence radiation (FL) leaves the sensor element via the same surface (OFL1) via which the pump radiation (LB) is also radiated into the sensor element. When using

Diamond blanks with a yellow coloring corresponding to the GIA tint "very light" or perhaps even the GIA coloring grade "faint", the red coloring is very slight or possibly even disappears. Slight red tints appear more pink to pink.

The nitrogen in the PI centers of the yellow diamonds serves as a donor, which causes the diamonds to be n-doped. As already mentioned, other donors, such as sulfur, can also be used for the support.

It was recognized according to the invention that the n-doping leads to a shift in the Fermi level within the diamond crystal. This shift in the Fermi level leads to a

Ionization of the defects produced by the irradiation, which are then negatively charged.

As a result, the flaws formed repel each other during the implantation process and are arranged at more or less similar distances from one another, if at the same time it is ensured that the flaws can move during their formation.

For this reason, the diamond blank is heated with electrons when it is irradiated. On the one hand, this increases the degree of ionization of the donors and thus the amount of electrons available in the conduction band and, on the other hand, the mobility of the defects.

It is known that diamonds show signs of graphitization on their surfaces from a temperature of approx. 750 ° C.

To prevent the diamond from oxidizing, the irradiation system and the

Process chamber must be evacuated during heating and irradiation. With the electron energies used, however, irradiation in a process chamber filled with protective gas is also conceivable.

Due to the heating and the n-doping, firstly the defects in the respective diamond crystal are arranged at a distance from each other and secondly the formation of agglomerations is prevented, which would result in a clouding of the diamond, and thirdly a large amount of NV- Centers are formed that fluoresce red and thus underline when irradiated with pump radiation (LB) (eg daylight) fluorescent radiation (FL) with the fluorescent radiation wavelength lp and the possibly red color of the diamond when used as a jewelry diamond. Doping the diamond with hydrogen has the opposite effect. This is stored in the flaws, which neutralizes their negative charge. Only when all hydrogen is bound. (e.g. as an H3 center) a red color can develop. CVD diamond substrates are therefore less suitable. While the process works for these substrates, it is not as efficient as using FIPFIT diamonds, which are grown under high pressure and temperature. FIPFIT diamonds with nitrogen atoms and with the lowest possible hydrogen content are therefore preferred as diamond blanks.

If CVD diamond, i.e. a metastable diamond, is to be used, which typically has an increased proportion of hydrogen incorporated as a result of the deposition process, it is proposed, before or during the process proposed here, e.g. by

Irradiation with particles and temperature treatment to neutralize the effect of the stored hydrogen.

The proposed method for producing one or more red jewelry diamonds therefore comprises the steps:

• Step 1: Provision of the diamond blank (s). For the characteristics of the

Diamond blanks can be given four different rules:

a) That the diamond blank (s) comprises nitrogen atoms in the form of PI centers and / or

b) that the diamond blank (s) have a yellow color and / or

c) that the diamond blank (s) are n-doped and / or

d) that the diamond blank (s) comprise nitrogen atoms together with hydrogen, in which case at least one of the three preceding rules a to c should be fulfilled.

• Step 2: irradiating the diamond blank (s) with electrons. The energy of

Electrons should preferably be above 2 MeV in order to have enough defects in the

To evoke diamonds and also to penetrate the diamond safely. The energy of the electrons should preferably be below 20 MeV, preferably none

Generate secondary radioactivity. It has been shown that an electron energy of IOMeV is particularly suitable. The energy of the electrons should therefore be greater than 500 keV and / or better greater than IMeV and / or better greater than 3 MeV and / or better greater than 4 MeV and / or better greater than 5 MeV and / or better greater than 6 MeV and / or better greater than 7 MeV and / or better than 8 MeV and / or better than 9 MeV and / or greater than 10 MeV, an energy of IOMeV being preferred. The radiation dose should preferably be between 5 * 10 ¹⁷ cm ² and 2 * 10 ¹⁸ cm ² , but at least below 10 ¹⁹ cm ² , in order to avoid graphitization. The decisive difference to the prior art, besides the n-doping of the diamond crystal, is that during the irradiation the temperature of the diamond or diamonds at an irradiation temperature greater than 600 ° C. and / or better greater than 700 ° C. and / or greater than 800 ° C. and lower 900 ° C and / or less well less than 1000 ° C and / or less well less than 1100 ° C and / or less well less than 1200 ° C, preferably between 800 ° C and 900 ° C. This supports the diffusion of the negatively charged defects and increases the electron density in the conduction band. The beam current of the electrical current of these electrons used for irradiating the diamond blanks is preferably adjusted so that the

Irradiation duration to achieve the above irradiation dose is at least 0.05 days and / or better at least 0.5 days and / or better at least 1 day and / or better at least 2 days and / or at least better 4 days and / or better at least 8 days. Since economy is also an important factor, trials

found that an economically preferred exposure time is 2 days.

During the irradiation, the diamond blanks are connected to a thermal resistance

Thermally coupled heat sink. During the irradiation, the diamond blanks are kept at the desired process temperature by a temperature control device by a controller that is part of the temperature control device. The temperature control device takes all of them into account

Energy inputs. The temperature control device can preferably regulate one or more heat flows into the quantity of diamond blanks to be processed and / or out of the quantity of diamond blanks as a function of the mean irradiation temperature of the diamond blanks.

The temperature control device regulates the total energy input by regulating at least one energy flow into the diamond blanks that heats the diamond blanks during the irradiation and, if necessary, the total energy dissipation so that the one temperature probe located in the vicinity of the

Diamond blanks is placed during the irradiation, an average irradiation temperature of the diamond blanks of greater than 600 ° C and / or greater than 700 ° C and / or greater than 800 ° C and less than 900 ° C and / or less than 1000 ° C and / or less than 1100 ° C and / or less than 1200 ° C, preferably between 800 ° C and 900 ° C. For this regulation, the temperature control device preferably comprises a PI,

P or better PID controller or another suitable controller. The total energy input is preferably not constant. Preferably the the

Total energy input into the diamond blanks a temporal constant component and a temporally pulsed component with a temporal pulse interval and a pulse height of

Total energy input pulses. It can also be just a single heating energy pulse. The temperature control device can then use the constant component and / or the pulse height of the

Use total energy input pulses of the total energy input and / or the time interval between the total energy input pulses to regulate the mean irradiation temperature detected by the temperature probe. If necessary, a heater can thus be provided, for example, which increases the total energy input for the pulse duration of a total energy input pulse, which results in a temperature increase and improves the healing of radiation damage. The total energy input is made up of the energy from a possibly active heating device, the thermal energy derived via the thermal discharge resistor and the more or less permanent beam power of the electron beam during the irradiation. The

The temperature control device must take this into account when setting the average target temperature.

In addition to natural diamonds, synthetic HPHT diamonds are also preferred

Diamond blanks are used. The use of synthetic CVD diamond is also conceivable, but not preferred.

Another advantage of the method compared to the methods that provide for annealing of the irradiated diamonds after the irradiation at high pressure is that the

Diamond blanks can be given their final cut before they are blasted. A diamond blank used according to the proposal thus preferably has at least one ground surface before the irradiation.

In order to avoid damage to the polished surfaces of the diamond blank through oxidation at a high process temperature, the irradiation with electrons takes place in a vacuum with a residual pressure of less than 10 ⁴ mBar and / or better of less than 10 ⁵ mBar and / or better of less than 10 ^s mBar and / or better of less than 10 ⁷ mBar and / or better of less than 10 ⁸ mBar and / or better of less than 10 ⁹ mBar and / or better of less than 10 ¹⁰ mBar. On the basis of economic considerations and on the basis of experiments, it was determined in the context of the development of the invention that a residual pressure of less than 10 ^s mbar is completely sufficient. Irradiation in a protective gas atmosphere, in particular in an agon atmosphere, is an alternative, less preferred option. A diamond blank can, for example, have one of the following cuts before blasting: Pointed stone cut, table stone cut, rose cut cut, Mazarin cut, brilliant cut, pear cut, princess cut, oval cut, heart cut, marquise cut, emerald cut, Asscher cut, cushion cut, radiant cut Cut, old diamond cut, emerald cut, baguette cut. This cut is not changed by the irradiation. The high process temperature during irradiation prevents damage to the optical surfaces. The diamonds can be cut after or before the irradiation. A cut before the irradiation is typically possible but not absolutely necessary.

A suitable diamond blank preferably has a size greater than 0.1 ct and / or better greater than 0.2 ct and / or better greater than 0.5 ct and / or better greater than 1 ct and / or better greater than 1.5 ct and / or better larger than 2ct. The irradiation and treatment of diamond granules and dusts, e.g. diamond in the form of nanodiamonds, is also possible in the manner described above for the production of red diamonds and / or for the production of HD-NV diamonds.

During the irradiation, the diamond blank (s) are located in a temperature-controlled process chamber at said process chamber temperature or in a temperature-controlled vessel at a process chamber temperature within the process chamber, which is preferably evacuated. The process chamber temperature here preferably deviates from not more than 200 ° C. and / or better not more than 100 ° C. and / or better not more than 50 ° C. and / or better not more than 20 ° C. and / or better not more than 10 ° C from the irradiation temperature. The heating power of the electron beam itself also plays a role here. Since the properties of the electron beam vary from system to system, the implementation of a DoEs (Design of Experiment) to determine the optimal process parameters for the pairing of irradiation system and

Diamond blanks recommended. The diamond blanks are preferably stored in a quartz vessel during the preferably pulsed irradiation with the typically pulsed electron beam, for example a linac, and brought there to the process temperature and on this

Process temperature maintained during irradiation.

S C H M U C K D I A M A N T

A diamond produced using the method described above, especially a red one

Jewelery diamond differs from the artificial red jewelery diamonds known in the prior art by its brilliance, clarity and color, which with a suitable pre-selection of the Diamond blanks in particular have no green or blue color additions. Colors like "pink" and "orange" are possible.

The diamond then usually corresponds to the Gia color "fancy red", which makes it particularly special.

In addition, it has some peculiarities in its absorption spectrum, which are clear traces of the application of the methods described above. Such a jewelry diamond is first and foremost a diamond single crystal that is colored by a coloring process, specifically colored red. The jewelry diamond appears red to a human observer when illuminated with white light. The GIA rules of determination for the coloring of

For example, jewelery diamonds can be found on the Internet at the time of filing this patent application at https://www.gia.edu/fancy-color-diamond-quality-factor.

A very simple representation of the diamond colors can be found under, for example

https://www.ninasjewellery.com.au/fancy-coloured-diamonds. The GIA standard is described, for example, in the publication by John M. King "GIA Colored Diamonds, Color Reference Charts", Gemological Institute of America, 2006. This publication can be obtained from the ordering information ISBN-10: 0873110536, ISBN-13: 978-0873110532. All the tints described on page 13 of this publication cited here show red jewelry diamonds in the sense of this disclosure.

In order to distinguish a diamond produced by the above method, which is an FID-NV diamond, from diamonds from the prior art, the light absorption at five different light wavelengths is considered.

A first absorption coefficient (oti) of the jewelery diamond or diamond is determined when light with a wavelength of 437 nm is irradiated in at least one direction of irradiation possible for the respective jewelery diamond at room temperature. The wavelength of 437 nm is chosen so that it lies roughly in the middle of the absorption edge of the jewelry diamond, which increases to shorter wavelengths up to total absorption and differentiates it well from artificially colored red jewelry diamonds from the prior art. Some of the other coloring methods show insufficient absorption at precisely this wavelength, which leads to a blue-green admixture in the absorption color. A second absorption coefficient (a ₂ ) of the jewelery diamond or the diamond is determined when light with a wavelength of 500 nm is irradiated in at least this direction of irradiation possible for the respective jewelery diamond at room temperature. The

A wavelength of 500 nm is chosen so that it lies at the foot of any absorption peak of an H3 center in the jewelry diamond concerned.

A third absorption coefficient (a ₃ ) of the jewelery diamond or the diamond is determined when irradiated with light with a wavelength of 570 nm in at least this direction of irradiation possible for the respective jewelery diamond at room temperature. The

Wavelength of 570nm is chosen so that it lies at the foot of any absorption peak of a NV ° center in the relevant jewelry diamond. Typically it is the maximum of the greatly broadened NV absorption range.

A fourth absorption coefficient (a ₄ ) of the jewelery diamond or the diamond is determined when irradiated with light with a wavelength of 800 nm in at least this direction of irradiation possible for the respective jewelery diamond at room temperature. The

The wavelength of 800 nm is chosen so that it lies above the GR1 center. After irradiation, some diamonds from the prior art show here a strictly monotonous increase in absorption towards larger wavelengths due to radiation damage that has not healed.

A fifth absorption coefficient (a ₅ ) of the jewelery diamond or diamond is determined when light is irradiated with a wavelength between 200 nm and 400 nm in at least this possible direction of irradiation at room temperature. The wavelength range from 200 nm to 400 nm is selected so that a red diamond colored by means of the method presented here is not or only insignificantly transparent.

In the case of a jewelery diamond or diamond, in particular HD-NV diamond, which was manufactured by means of one of the methods specified here, these five absorption coefficients are typically in certain ratios to one another. Because only a limited number of

If jewelery diamonds or diamonds were colored red up to the time of registration, it cannot be ruled out that there may be exceptions to this rule, as there is always a statistical uncertainty that can only be eliminated with an infinite number of samples. Such

Jewelry diamonds can also be used, in particular with an appropriate cut

Sensor elements are used. In general, such diamonds can also be used without Gemstone cut, for example only provided with one or two polished surfaces (OFL1, OFL2) can be used as sensor elements. FID-NV diamonds and / or diamonds with other color centers, preferably high density, used as sensor elements can therefore also have these or similar spectral optical properties.

Among the diamonds produced when the application was drawn up was the fifth

The absorption coefficient (a ₅ ) is greater than the first absorption coefficient (oti), the first

Absorption coefficient (a _,! ) Is greater than the third absorption coefficient (a ₃ ), the third

The absorption coefficient (a ₃ ) is greater than the second absorption coefficient (a ₂ ) and the second absorption coefficient (a ₂ ) is greater than the fourth absorption coefficient (a ₄ ). The difference between the third absorption coefficient (a ₃ ) minus the second absorption coefficient (a ₂ ) was also smaller than the difference between the second absorption coefficient (a ₂ ) minus the fourth absorption coefficient (a ₄ ).

The diamond blank of the red colored jewelry diamond was preferred by a

Crystal growing process produced. In particular, it is preferably an HPHT diamond.

Such a jewelry diamond preferably has one of the following cuts: Pointed stone cut, table stone cut, rose cut cut, Mazarin cut, brilliant cut, pear cut, princess cut, oval cut, heart cut, marquise cut, emerald cut, Asscher cut, cushion cut, radiant cut, Diamond old cut, emerald cut or baguette cut.

Because of the irradiation at temperature, the jewelry diamond according to the invention is clearer and less cloudy than artificially colored red jewelry diamonds from the prior art. Such a jewelry diamond therefore typically has a quality grade of Sil or better VS2 or better VS1 or better VVS2 or better VVS1 or better "internally flawless" or better "flawless" when using a correspondingly high quality diamond blank.

Information about the quality level can for example under the web link

https://www.koenigjewellery.com/diamanten/die-welt-der-diamanten/gia-die-4-cs/. The best quality grade according to the GIA standard is the "flawless" quality. The worst quality grade according to the GIA standard is quality grade l ₃ . The color of the red diamond that typically results when using the disclosed method can vary, depending on the intensity, from a slight hint of color to a deep, almost black colored stone. The decisive factor is the strength of the yellowish color of the

Diamond blank. The color can be associated with a RAL color. When illuminated with white light in front of a white background, a proposed jewelry diamond appears to the human observer in a color corresponding to RAL 3020 and / or RAL3024 and / or RAL 3026 and / or another RAL color 3XXX, where XXX is a three-digit number between 000 and 999 stands.

The GIA has tried to systematize the coloring of diamonds. Therefore, reference is again made here to the John M. King "GIA Colored Diamonds, Color Reference Charts", Gemological Institute of America, 2006, ISBN-10: 0873110536, ISBN-13: 978-0873110532. A

Proposed jewelry diamond shows after performing the proposed

Procedure the red color "fancy-red" or the red color "fancy-deep" or the red color "fancy-vivid" or the red color "fancy-dark" or the red color "fancy-intense" or the red color " fancy light "or the red color" light "according to GIA standards. In summary, it can be said that the jewelry diamond has a red color when it is completely re-colored according to the pictures of

Shows diamonds on page 13 of John M. King's pamphlet "GIA Colored Diamonds, Color Reference Charts", Gemological Institute of America, 2006, ISBN-10: 0873110536, ISBN-13: 978-0873110532. If the yellow color centers are not completely recolored, the jewelry diamond can also have orange tones. A jewelry diamond according to the invention can then have the orange-pink color “fancy-red” or the orange-pink color “fancy-deep” or the orange-pink color “fancy-vivid” or the orange-pink color “fancy-dark” or the show the orange-pink color "fancy-intense" or the orange-pink color "fancy light" or the orange-pink color "light" according to the GIA standard. Alternatively, this can also be summarized in such a way that, with the remaining yellow color centers, the jewelery diamond has an orange-pink color according to the pictures of the diamonds on page 12 of the text by John M. King "GIA Colored Diamonds, Color Reference Charts", Gemological Institute of America, 2006, ISBN- 10: 0873110536, ISBN-13: 978-0873110532 shows. Other colors are possible.

In the proposed method for coloring the diamond blanks, large amounts of NV centers are produced in the material of the jewelry diamond, whereby the jewelry diamond fluoresces with a color in the range of 637nm +/- 10nm when illuminated with white light against a white background, which gives the impression of The brilliance of the jewelry diamond is enhanced. The jewelry diamond preferably has a fluorescence with a color temperature of less than 1000K, which corresponds to a deep red. If a yellow color of the diamond blank is not completely converted into a red color, the jewelry diamond can also have a color with a

Have a color temperature of less than 2000K. The decorative diamond thus has a color temperature of less than 1000K when exposed to white light in at least one transmission direction.

The jewelry diamond, if it is to fluoresce, preferably has a density of NV centers of more than 0.01ppm and / or of more than 10-3ppm and / or of more than 10-4ppm and / or of more than 10-5ppm and / or of more than 10-6ppm based on the number of carbon atoms per unit volume. If fluorescence is to be avoided, the jewelry diamond preferably has a density of NV centers that is less than 10 ppm and / or less than 2 ppm and / or less than 1 ppm and / or less than 0.5 ppm and / or less than 0, 2ppm and / or less than 0, lppm and / or less than 0.05ppm and / or less than 0.02ppm and / or less than 0.01ppm and / or less than 0.005ppm and / or less than 0.002ppm and / or less than 0.001ppm and / or less than 5 * 10 ⁴ ppm and / or less than 2 * 10 ⁴ ppm and / or less than 10 ⁵ ppm and / or less than 5 * 10 ⁵ ppm and / or less than 2 * 10 ⁵ ppm and / or less than 10 ⁶ ppm and / or less than 5 * 10 ⁶ ppm and / or less than 2 * 10 ⁶ ppm and / or less than 10 ⁷ ppm based on the number of carbon atoms per unit volume.

Naturally, the jewelry diamond according to the invention typically has traces of irradiation with particles, in particular with electrons and / or protons.

In order to be able to carry out the process described above for coloring a jewelery diamond red, an appropriate device is necessary. It preferably includes one

Electron accelerator that delivers electrons with an energy between 2MeV and IOMeV into a process chamber, and a vacuum system that is suitable and intended for that

To evacuate the process chamber, and in contrast to the prior art, additionally one

Meat device. This meat frying device is preferably suitable and intended for the

To heat the process chamber and / or a vessel within the process chamber to a process temperature. The device furthermore preferably comprises a temperature sensor which is suitable and intended to detect the temperature of the process chamber and / or the temperature of the vessel and / or the temperature of one or more diamond blanks within the vessel or within the process chamber as a temperature measurement. A regulator that is suitable for this and it is intended to control the heating device as a function of the measured temperature value detected, is preferably also part of the device. Typically, the device has electron-optical device parts such as magnetic lenses, Wien filters, diaphragms and

Deflection units on. Typically, the deflection units are used to make the electron beam travel over the diamond blanks during the irradiation. (English: to be scanned) As a result of which the electrons are distributed essentially homogeneously over the diamond blanks in the process chamber.

The invention thus also includes the use of the method described above for

Making one or more red jewelry diamonds, typically also called

Sensor elements can be used by means of a device as described above. With regard to the color red, reference is made to the preceding explanations.

In this respect, the term "jewelry diamond" is also used as a synonym for the word in this document

To understand "sensor element".

Fig. 91

Figure 91 illustrates the definition of times.

Fig. 92

FIG. 92 shows the non-linearity of the dependence of the contrast (KT) (see also FIG. 28) on the intensity (l _pmp ) of the pump radiation (LB), which is the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group (NVC) paramagnetic centers (NV1) or the groups (NVC) paramagnetic centers (NV1) reached. The contrast increases to high intensities (1 _pmp ) of the pump radiation (LB). This is in Dimant for individual NV centers, i.e. not for HD NV diamonds as described here, from the text Staacke, R., John, R., Wunderlich, R., Horsthemke, L., Knolle, W., Laube, C., Glösekötter, P., Burchard, B., Abel, B. and Meijer, J. (2020), "Isotropie Scalar Quantum Sensing of Magnetic Fields for Industrial Application", Adv. Quantum Technol., doi: 10.1002 / qute.202000037, known whose publication date is after

Priority date of the priority-giving fonts of this font is. We refer in particular to Figures 3b and 3d of that document. As a result of a high density of paramagnetic centers, such as, for example, a high density of NV centers as in an HD-NV diamond, as described in this document, the contrast (KT) can exceed that shown in that document in particular can be increased to 25% and even 30% and even 40% and more, which is new compared to the prior art. Theoretically, values of contrast (KT) of 50% and more can be achieved. In this context we refer to the publication L. Horsthemke, C. Bischoff, P. Glösekötter, B. Burchard, R. Staacke, J. Meijer "Highly Sensitive Compact Room

Temperature Quantum Scalar Magnetometer "SMSI 2020, Pages 47 - 48, DOI

10.5162 / SM SI2020 / A1.4, ISBN 978-3-9819376-2-6, whose publication date is after

Priority date of the priority-giving fonts of this font is.

As the pump radiation intensity density (I _pmp ) increases, the contrast (KT) rises approximately root-like depending on the density of the intensity (I _pmp ) of the pump radiation (LB). Intensity (I _pmp , I _fi , I _kf ul _ks ) is understood in this document to mean the power (energy / time unit) applied to a test specimen. If the density of the paramagnetic centers (NV1) in the sensor element is high, the higher pump radiation _intensity density (l _pmp ) increases the density of the excited paramagnetic centers (NV1) and thus the probability of the coupling

paramagnetic centers (NV1) with one another and thus the probability of collective effects of the possibly large number of coupled paramagnetic centers (NV1) coupled in this way. In the case of NV centers (NV1), the use of an HD-NV diamond and a high maximum intensity (l _pmpm ax) of the pump radiation (LB) increases the density of the excited NV centers (NV1) and thus the contrast (KT) . The process for producing such diamonds is thus a key element of the proposal presented here. So that the contrast (KT) is also medium-high, the time in which the intensity (l _pmp ) of the pump radiation (LB) from the offset value (Ipmpoff) of the pump radiation _intensity (l _pmp ) and at the same time from the maximum value (l _pmpmax ) should be

_Pump radiation _intensity (l _pmp ) is different, can be minimized. For the same reason, the spatial area within the sensor element in which the intensity (l _pmp ) of the pump radiation (LB) _depends on the offset value (l _pmp0ff ) of the pump radiation _intensity (l _pmp ) and at the same time from the maximum value (lpmpmax) of the pump radiation _intensity (l _pmp ) is different, be spatially minimized. This can be done by focusing the pump radiation (LB), for example using optical functional elements such as lenses and / or curved mirrors and / or reflective surfaces and / or photonic crystals, etc. Furthermore, the paramagnetic centers (NV1), i.e. in the example of an NV-HD diamond, should only occur in a significant amount and density in those spatial areas within the sensor element in which there is essentially a pump radiation _intensity (l _pmp )

Pump radiation (LB) in the vicinity of the maximum pump radiation intensity (1 _pm pmax) is achieved. Related to the comments on the Fabry-Perot interferometer and optical resonators Reference is made explicitly to FIG. 71 at this point. Such a range is preferred by the at least temporarily fulfilled condition l _pmp > 50% * l _{pmpma) <} and / or better l _pmp > 75% * l _{pmpma) <} and / or better l _P m _p > 90% * l _{pmpma) <} and / or better l _P m _p > 95% * l _{pmpma) <} and / or better l _P m _p > 98% * l _{pmpma) <} fulfilled.

A multiphysics simulation based on an FDTD simulation is expressly recommended for the construction of the sensor element. The complex optical relationships (see Figure 71) must be observed. The FDTD method is a finite difference time domain simulation, which is the English name for finite difference method in the time domain. The procedure is also called the Yee procedure or method. It is a mathematical method for the direct integration of time-dependent differential equations, which is mainly used to calculate the solutions of Maxwell's equations, as in this case.

Fig. 93

FIG. 93 shows a simplified structure of a substrate (D) for the measurement in transmission. In contrast to FIG. 71, the fluorescence radiation (FL) does not exit the substrate (D) via the first surface (OFL) via which the pump radiation (LB) enters the substrate (D). Rather, the fluorescence radiation (FL) now occurs over a second surface (OFL2). In order to avoid the absorption and weakening of the contrast (KT), it was recognized in the course of the elaboration of the document presented here that the thickness (d _NV c) of the group (NVC) of parametric centers (NV1) for the radiation configuration of FIG. 93 is limited must become. The thickness (d _NV c) of the group (NVC) of parametric centers (NV1) is preferably not greater than 10,000 times that

_Pump radiation _wavelength (l _rGTΐr ) and / or better not greater than 5000 times that

_Pump radiation _wavelength (l _rigir ) and / or better not greater than 2000 times that

_Pump radiation _wavelength (l _rGTΐr ) and / or better not greater than 1000 times that

_Pump radiation _wavelength (l _rigir ) and / or better not greater than 500 times the

_Pump radiation _wavelength (l _rGTΐr ) and / or better not greater than 200 times the

_Pump radiation _wavelength (l _rigir ) and / or better not greater than 100 times the

_Pump radiation _wavelength (l _rGTΐr ) and / or better not greater than 50 times the

_Pump radiation _wavelength (l _rigir ) and / or better not greater than 20 times the

_Pump radiation _wavelength (l _rGTΐr ) and / or better not greater than 10 times the

_Pump radiation _wavelength (l _rGTΐr ) and / or better not greater than 5 times the

_Pump radiation _wavelength (l _rigir ) and / or better not greater than 2 times the _Pump radiation _wavelength (l _rGTΐr ) and / or better not greater than 1 times the pump radiation _wavelength (l _rigir ). A good contrast was achieved with a thickness (d _NV c) of the group (NVC) of parametric centers (NV1) not greater than 50 times the pump radiation _wavelength (l _rGTΐr ). For the rest, reference is made to the statements relating to FIG. 71.

Fig. 94

FIG. 94 is based on FIG. 73. In contrast to FIG. 73, however, the readout of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) does not take place via the fluorescence radiation (FL), but about the value of the photo current. In the example of Figure 94, a horizontal line (LH), a first horizontal screen line (SH1) and a second horizontal screen line (SH2) control this process. A center (PZ) again serves as a pump radiation source (PLI). The center (PZ) is pumped by a current flow between a cathode contact (KTH) and an anode contact (AN), so that the center PZ emits pump radiation (LB) with a pump radiation wavelength (l _r , _hr ). The center (PZ) thus serves as an exemplary pump radiation source (PLI).

The substrate (D) serves here as an optical functional element and couples this pump radiation to the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1). In the case of NV centers in diamond as paramagnetic centers (NV1) in the substrate (D), the horizontal line (LH) can be positively charged with respect to the substrate (D). The electric field of the horizontal line (LH) then leads to that the preferred state of the NV center of the NV ^_ state. The NV center then generates photoelectrons. These can then be withdrawn through the first horizontal shield line (SH1) and the second horizontal shield line (SH2) if a suitable voltage is applied between them. A photocurrent then flows in the first horizontal shield line (SH1) and the second horizontal shield line (SH2), which is dependent on the magnetic flux density B or other physical parameters such as electrical flux density D, temperature q, acceleration a, gravitational field strength g, rotation speed co, intensity the ionizing radiation etc. at the location of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1). This photocurrent can be detected by a control and evaluation unit (LIV), as presented here as an example, and converted into a measured value for the relevant, influencing the photocurrent Parameters are converted. This measured value of the photocurrent then depends on one or more of these physical parameters and can thus be used as a measured value for these

can be reused. As can be easily seen, the structure is similar to a MOS transistor. In the event that paramagnetic centers in semiconductor crystals, for example G centers in silicon or V centers in SiC, are used for the measurement, it makes sense if the horizontal line (LH), which is here through an insulator (IS), is the substrate (D) is separated from the same material, for example polycrystalline silicon in the case of silicon as the substrate (D). In this context we refer, for example, to the font C. Beaufils, W. Redjem,

E. Rousseau, V. Jacques, A. Yu. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, G. Cassabois "Optical properties of an ensemble of G-centers in Silicon", Phys. Rev. B 97, 035303 01/09/2018 and the text S. Castelletto, A. Boretti, "Silicon Carbide color centers for quantum applications", J. Phys. Photonics 2 022001, 2020. The insulator (IS) is then preferably a gate oxide. Particularly preferably in such a case of a semiconductor crystal as substrate (D) the semiconductor crystal then also includes electronic components that are associated with the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1 ) are co-integrated in a single substrate (D). The substrate (D) then preferably also comprises the control and evaluation circuit (LIV) in whole or in part, so that it is conceivable to manufacture a one-chip solution completely from silicon. However, other possibilities then also come into consideration for the pump radiation source. In this context we refer, for example, to L. W. Snyman, J-L. Polleux, KA Ogudo, C. Viana, S. Wahle, "High Intensity 100 nW 5 GHz Silicon Avalanche LED utilizing carrier energy and momentum engineering", Conference Paper in Proceedings of SPIE - The International Society for Optical Engineering · February 2014, DOI: 10.1117 / 12.2038195. We also point out that

unpublished application PCT / DE 2020/100 430, this also relates to the

Complete integration of quantum systems.

Fig. 95

FIG. 95 now shows the system of FIG. 5 with evaluation of the photocurrent and

Reference noise source and thickness switch (DS).

In this example, the pump radiation source (PLI) is operated continuously and not in a modulated manner. The pump radiation source (PLI) irradiates the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) in the substrate (D) of the sensor element.

The compensation radiation source (PLK) is operated permanently and not modulated in this example. The compensation radiation source (PLK) irradiates the paramagnetic

Reference center (NV2) or the paramagnetic reference centers (NV2) or the group or groups (NVC2) of paramagnetic reference centers (NV2) in the substrate (D) of the reference element.

The sensor element can, for example, be an arrangement according to FIG. 78, in which case it does not have to have the vertical line (LH) and the horizontal line (LH) and the first horizontal shield line (LH1) of FIG. 78, for example. So only have to

Device parts similar to the first vertical shield line (SV1) and the second vertical shield line (SV2) of FIG. 78 may be present together with contacts that are not shown in FIG. 78 for the sake of simplicity. At least one first contact then connects the first vertical shield line (SV1) to the substrate (D). At least one second contact then connects the second vertical shield line (SV2) to the substrate (D). The first contact and the second contact are preferably placed opposite the quantum dot (NV1 / NVC) in such a way that it is as homogeneous as possible when an extraction voltage (V _ext ) is applied between the first vertical shield line (SV1) and the second vertical shield line (SV2) An electric extraction field is generated around the quantum dot, so that the photocurrent when the quantum dot (NV1 / NVC) is irradiated with pump radiation (LB) is extracted from the quantum dot (NV1 / NVC) and flows over the two shield lines (SV1, SV2). FIG. 97 shows such a proposal for a sensor element.

The reference element can also be, for example, an arrangement according to FIG. 78, in which case this does not have to have the vertical line (LH) and the horizontal line (LH) and the first horizontal shield line (LH1) of FIG. Thus, only device parts similar to the first vertical shield line (SV1) and the second vertical shield line (SV2) of FIG. 78 together with contacts, which are not shown in FIG. 78 for the sake of simplicity, have to be present here as well. At least one first contact then connects the first vertical shield line (SV1) to the substrate (D) of the reference element. At least one second contact then connects the second vertical shield line (SV2) to the substrate (D) of the reference element. The first contact and the second contact are preferred as opposed to this

Reference quantum dot (NV2 / NVC2) is placed between the first vertical shield line (SV1) and the second vertical shield line when an extraction voltage (V _ext ) is applied (SV2) generates an electrical extraction field that is as homogeneous as possible around the reference quantum dot, so that the photocurrent when the reference quantum dot (NV2 / NVC2) is irradiated with compensation radiation (KS) is extracted from the reference quantum dot (NV2 / NVC2) and via the two shield lines (SV1, SV2 ) flows. Figure 98 shows such a proposal for a

Sensor element.

A thickness switch (DS) is used to switch back and forth between the photocurrent of the sensor element and the photocurrent of the reference element as a function of the transmission signal (S5). The output of the thickness switch (DS) is the receiver rise signal (SO). The first amplifier (VI) amplifies the receiver output signal (SO) to the reduced receiver output signal (Sl).

In this case, the first amplifier (VI) is preferably an amplifier with a current-guided input in order to be able to amplify the respective photocurrent. In a subsequent one

Synchronous demodulator (Ml, TP) a receiver output signal (S4) is generated, which again corresponds to the value of the difference between the amount of the photocurrent of the sensor element and the amount of the photocurrent of the reference element. In the example of Figure 95, one is scanning

Flalteschaltung (S&FI) again the filter output signal (S4) synchronously with the transmission signal period (T _p ) of the transmission signal (S5) to ensure that the loop filter (TP) forms a specific and not an indefinite integral. In the example in FIG. 95, the synchronous demodulator consists of a first mixer (Ml), which multiplies the transmission signal with the reduced receiver output signal (SO), and the loop filter (TP). The sensor element and the are preferred

Reference element executed in the same way. If necessary, the reference element is shielded from physical parameters that can influence the photocurrent of the reference element by a shield (AS). Such a shield (AS) can be, for example, the material of a conductor, inside of which the reference element is located. The value of the sensor output signal (out), which is the output signal of the folded circuit (S&FI) in this example, can then be used as

Measured value can be used for such a parameter that influences the photo currents of the sensor element and the reference element. Strictly speaking, this measured value represents a measured value for the difference between the value of such an influencing parameter at the location of the sensor element and the value of the relevant influencing parameter at the location of the reference element. The loop filter (TP) is again designed so that it passes a constant signal and blocks the transmission signal (S5). Fig. 96

The figure 96 largely corresponds to the figure 95 with the difference that the

Pump radiation source (PLI) both irradiates the sensor element and thus excites the quantum dot contained therein and also irradiates the reference element and thus excites the reference quantum dot contained therein.

Fig. 97

FIG. 97 corresponds to FIG. 78, the function being limited to the extraction of the photocurrent. For this purpose, a first vertical shield line (SV1) and a second vertical shield line (SV2) are located on the surface (OFL1) of the substrate (D), insulated from the substrate (D) by electrical insulation (IS). The first vertical shield line (SV1) is electrically connected to the substrate (D) via a first contact (KV11). The second vertical shield line (SV2) is electrically connected to the substrate (D) via a second contact (KV12). Unlike in the figure drawn for reasons of understanding, it is advantageous if the contacts along the respective

The shielding line (SV1, SV2) should be elongated and not square as shown, because then the electric field in the area of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) is more homogeneous. In the example in FIG. 97, when an extraction voltage (V _ext ) is applied, a photocurrent (I _ph ) flows from the first vertical shield line (SV1) via the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or the groups (NVC) of paramagnetic centers (NV1) to the second vertical shield line (SV2) when the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) with pump radiation (LB) the

_Pump radiation _wavelength (l _rGTΐr ) are irradiated. In the example of FIG. 97, the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) are located in an epitaxially applied, preferably isotopically pure epitaxial layer (DEPI). In the case of a diamond as the substrate (D), this is

Epitaxial layer preferably made of isotopically pure diamond. A device from FIG. 97 is suitable, for example, as a sensor element in a sensor system according to FIG. 95 or 96. Fig. 98

FIG. 98 shows the structure of FIG. 97, where instead of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1), the paramagnetic reference center (NV2) or . the paramagnetic reference centers (NV2) or the group or groups (NVC2) of paramagnetic reference centers (NV2) are located. What was written about FIG. 97 can thus be transferred one to one. A

The device of FIG. 97 is suitable, for example, as a reference element in a sensor system corresponding to FIG. 95 or 96. Since the reference element is preferably designed in the same way as the sensor element, the difference between FIG. 98 and FIG. 97 is more theoretical so that a sensor element can usually be used as a reference element and vice versa.

Fig. 99

FIG. 99 shows one possibility in the case of a sensor element with a direction-independent one

Sensitivity of the intensity (l _{f |} ) of the fluorescent radiation (FL) by placing the

Sensor element with the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1), for example in a slot in a sheet of ferromagnetic material (FeM), to cause a directional dependency. Such a sensor element with a direction-independent sensitivity of the intensity (l _fl ) of the fluorescent radiation (FL) can for example comprise a larger number of statistically uniformly distributed differently oriented diamond crystals of a diamond powder in a glass or plastic matrix, these diamonds of the diamond powder preferably being HD-NV diamonds are. When using a sensor system with a sensor element and a reference element, it is conceivable that one of these elements (sensor element or reference element) interacts with such a ferromagnetic material (FeM), i.e. a functional element of a magnetic circuit, in such a way that I am responsible for the sensitivity of the photocurrent or of the fluorescence radiation versus the magnetic flux density B results in a directional dependence. List of reference symbols and list of abbreviations

a _{k Angle of} intersection between the horizontal line (LH) and the vertical line

Line (LV) of a quantum bit (QUB) comprising a paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group (NVC) or groups (NVC) of paramagnetic centers. al fraction of the value il of the pump radiation (LB) in the first

Transmission path (II) that hits the sensor element and the paramagnetic centers (NV1) contained therein.

Al first adder; a2 second component of the pump radiation (LB), the one or more paramagnetic

Convert centers (NV1) into fluorescence radiation (FL) with an intensity ifl and which reaches the first optical filter (F1);

A2 second adder; a3 third portion of the pump radiation (LB) on which the intensity (l _pmp ) of the

Pump radiation (LB) is reduced after the interaction with the sensor element when it reaches the first optical filter (F1); a4 Proportion of the value of the fluorescence radiation (FL), which the

Radiation receiver (PD) reached by which the fluorescence radiation (FL) is reduced again after passing through the first filter (Fl); a5 fifth part of the emitted by the compensation radiation source (PLK)

Radiation intensity reaching the radiation receiver (PD);

AK absorption coefficient (in FIG. 90 based on 1 = 100% absorption);

AS magnetic shield;

ASv front matching layer (anti-reflective layer);

ASr rear matching layer (anti-reflective layer); AN anode contact; bO offset value;

B ₀ bias flux density;

BAI first barrier;

BA2 second barrier;

BA3 third barrier;

BDI first bond wire;

BD2 second bond wire;

BD3 third bond wire;

BD4 fourth bond wire;

B _m minimum magnetic flux density for the flux density B at the location of the

paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) above which the monotonically falling curve of FIG. 27 for the dependence of the intensity (l _{f |} ) of the fluorescence radiation ( FL) from the magnetic flux density B, this curve then also being bijective and thus calibratable.

B _{NV Flux} density vector of the circularly polarized electromagnetic

Wave field for manipulating the quantum dot with the

paramagnetic center (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) at the location of the quantum dot with the paramagnetic center (NV1) or the group or groups (NVC) of paramagnetic centers (NV1). For a better understanding, the rotation of this flux density vector is shown in FIG. In Figure 75, the rotation of the flux density vector is controlled by controlling the horizontal line (LH) with a horizontal current component (IH), which is generated with a horizontal electron- Electron microwave frequency (f _M w _hi ) with a horizontal

Modulation is modulated, and by controlling the vertical line (LV) with a vertical current component (IV) that modulates with a vertical electron-electron-microwave frequency (f _M wv) with a vertical modulation that is +/- p / 2 in the phase is shifted from the horizontal modulation. The vertical electron-electron-microwave frequency (f _M wv) and the horizontal electron-electron-microwave frequency (f _M w _hi ) are typically equal to one another and thus typically equal to a common electron-electron microwave frequency (f _M w) Modulation of the horizontal current (IH) in the horizontal line (LH) when the quantum bit (QUB) is activated for the duration of the activation, for example during a p / 4 or a p / 2 or a p pulse, phase-locked to the modulation of the vertical flow (IV) in the vertical line (LH);

Biwi flux density vector of circularly polarized electromagnetic

Wave field for manipulating the first quantum dot (NV1) at the location of the first quantum dot (NV1);

BO case back;

Bopt flux density of the optimal magnetic working point of the sensor element with the paramagnetic centers (NV1) and / or the group (NVC) paramagnetic centers (NV1) and / or the groups (NVC) paramagnetic centers. With this value the optimal

magnetic flux density (B _opt ) the dependence of the intensity (l _fl ) of the fluorescence radiation (FL) on the magnetic flux density B is greatest; first virtual horizontal magnetic flux density vector at the location of the first virtual horizontal quantum dot (VHNV1); second virtual horizontal magnetic flux density vector at the location of the second virtual horizontal quantum dot (VHNV2); Bwiwi first virtual vertical magnetic flux density vector at the location of the first virtual vertical quantum dot (VVNV1); second virtual vertical magnetic flux density vector at the location of the second virtual vertical quantum dot (VVNV2);

CAV cavity, which is formed by the base (BO) and circumferential wall (WA) and is open without a cover (DE) upwards via the assembly opening (MO);

CBA control unit A;

CBB control unit B;

CI core center. In the case of an isotopically pure ¹² C diamond, a

Core center are formed in that, for example, a ¹³ C isotope is introduced into the diamond, which has a magnetic core moment.

CÜ! first nuclear quantum dot (CI li) of the first quantum ALU (QUALU1);

Cll ₂ second nuclear quantum dot (Cll ₂ ) of the first quantum ALU (QUALU1);

Cll ₃ third nuclear quantum dot (Cll ₃ ) of the first quantum ALU (QUALU1);

CI2i first nuclear quantum dot (02 ^ the second quantum ALU (QUALU2);

CI2 ₂ second nuclear quantum dot (CI2 ₂ ) of the second quantum ALU (QUALU2);

CI2 ₃ third nuclear quantum dot (CI2 ₃ ) of the second quantum ALU (QUALU2);

CIC group (cluster) of core centers (CI). Such a group includes

at least one core center (CI). However, such a group preferably comprises a plurality of core centers (NV1). The core centers (CI) of a group of core centers (CI) are usually as close to a paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or several groups (NVC) of paramagnetic centers (NV1) , that the Nuclear centers (CI) with the paramagnetic center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1) can be coupled and thus be entangled. By using the paramagnetic center (NV1) or the paramagnetic centers (NV1) as ancilla bits, the core centers (CI) of a group of core centers (CI) can be indirectly coupled with one another and thus entangled. You can thus couple with one another within the group and, if necessary, develop preferably mixed states. Since the range of the coupling of the paramagnetic centers (NV1) is greater than the range of the core centers (CI), with the help of chains of paramagnetic centers as ancilla bits, groups of core centers (CI) that are distant from one another can also be coupled and entangled. The density of the is very particularly preferred

paramagnetic centers (NV1) in the vicinity of such a group are so high that the paramagnetic centers (NV1) show collective behavior and couple collectively with the core centers (CI). The extension of the group of core centers (CI) is typically through the

Range of their interaction with the associated

paramagnetic center determined .;

AKTFL Compensation Fluorescence Phase Shift Time: This is the

Delaying the emission of the compensation fluorescence radiation (KFL) compared to the application of the compensation transmission signal (S7);

ATFL fluorescence phase shift time: This is the delay in the

Emission of the fluorescent radiation (FL) a) compared to the application of the transmission signal (S5) or b) compared to the pump radiation (LB), the first definition a) being preferred;

Ati _pmp send delay: This is the delay in sending the

Pump radiation (LB) through the pump radiation source (PLI) compared to the application of the transmission signal (S5) to the pump radiation source (PLI). In many applications, this transmission delay can be used

Simplification of the calculations can be approximated with a value of Os;

D substrate. The substrate can be one of several substrates within the

Be sensor element. The substrate (D) can also do that

Be the sensor element itself. When using NV centers as paramagnetic centers (NV1), the material of the substrate (D) is diamond. In most of the cases described here, the substrate is preferably an HD-NV diamond; d Expansion of a group (NVC) of paramagnetic centers (NV1) perpendicular to the pointing vector of the incident pump radiation (LB) within a sensor element. dO offset constant of the receiver output signal (SO), which is independent of the value of the total radiation ig that reaches the radiation receiver (PD); dl proportionality factor with which the value (sO) des

Receiver output signal (SO) on the value (ig) of the intensity of the total radiation that hits the receiver (PD) depends; d _a l first distance in which a paramagnetic center (NV1) or a

Group (NVC) of paramagnetic centers (NV1) located under the surface (OFL1) of the substrate (D) in the sensor element; d _a 2 first distance in which a core center (CI) or a group of

Core centers (CI) are located below the surface (OFL1) of the substrate (D) in the sensor element;

DCS dichroic mirror for the selective selection of the pump radiation (LB) and the fluorescence radiation (FL);

DE lid; d _N vc Extension of a group (NVC) of paramagnetic centers (NV1) parallel to the pointing vector of the incident pump radiation (LB) within a sensor element. It is therefore the thickness of the group (NVC) of paramagnetic centers (NV1) in the substrate (D); d _IM vc2 Extension of a group (NVC2) of paramagnetic reference centers

(NV2) perpendicular to the pointing vector of the incident

Compensation radiation (KS) within a sensor element. dp _ZC Expansion of a group (PZC) of centers (PZ) that emit pump radiation (LB) within a sensor element. dRa value of the noise of the value (sO) of the receiver output signal (SO) des

Radiation receiver (PD), which does not depend on the value of the total intensity ig of the radiation that hits the radiation receiver (PD). dRb value of the noise of the value (sO) of the receiver output signal (SO) des

Radiation receiver (PD), which depends on the value of the total intensity ig of the radiation that hits the radiation receiver (PD).

DS thickness switch;

EMI external mirror;

F [] linear filter function of the loop filter (TP) and the additional one

Loop filter (TP ¹ ). The filter function satisfies the equations F [X1 + X2] = F [X1] + F [X2] and F [x * Xl] = x * F [Xl], whereby said

Loop filters (TP, TP ') are linear filters. (Let XI and XI be the two values of any two signals x be any real factor.);

Fl first filter. The first filter is transparent to the fluorescence radiation

(FL) of the paramagnetic centers (NV1) in the material of the

Sensor element. It is preferably the

Fluorescence radiation (FL) from an NV center, the sensor element preferably being a nano-diamond with diamond and / or an HD-NV diamond as material; F2 optional second filter for selecting a wavelength optimally selected for the excitation of the paramagnetic center or centers (NV1) from a broader radiation spectrum. Preferably, the second filter is essentially not transparent to the

Fluorescence radiation wavelength (l ^) of the fluorescence radiation (FL). The second filter is not shown in most of the figures, since a narrow-band pump radiation source (PLI), such as a LASER, preferably does not have any radiation in the region of the

Fluorescence radiation wavelength (lh) emits. However, the second filter is absolutely necessary if the pump radiation source (PLI) has a radiation component with the fluorescence radiation wavelength (1h) of the fluorescence radiation (FL) in its pump radiation spectrum. In this case, the transmission signal (S5) would crosstalk directly into the reception path without the second filter and thus falsify the measurement signal.

FeM ferromagnetic material;

FL fluorescence radiation of the paramagnetic centers (NV1) in the material of the

Sensor element. It is preferably the

Fluorescence radiation from one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1). It is preferably the

Fluorescence radiation from one or more NV centers and / or one or more groups of NV centers, the reference element preferably being one or more diamonds and / or nano-diamond with diamond as material;

FLw Alternating component of the intensity (l _fl ) of the fluorescence radiation (FL); f _MW common electron-electron microwave frequency (f _M w); f _MWH horizontal electron-electron microwave frequency. The vertical electron

Electron microwave frequency (f _M wv) and the horizontal electron Electron-microwave frequencies (f _M w _hi ) are typically equal to one another and therefore typically equal to a common electron-electron microwave frequency (f _M w);

fiviwv vertical electron-electron microwave frequency. The vertical electron-electron microwave frequency (f _M wv) and the horizontal electron-electron microwave frequency (f _M w _hi ) are typically equal to each other and thus typically equal to a common electron-electron microwave frequency (f _M w);

G signal generator;

Ge fastening means with which the sensor element with the paramagnetic

Centers (NV1) in the material of the sensor element on the first filter (F1) and / or on the integrated circuit (IC) is attached. The fastening means is preferably transparent to radiation with the fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) in the material of the sensor element. The fastening means is preferably transparent to radiation with the fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) in the material of the sensor element. The fastening means is preferably transparent to the radiation with the pump radiation _wavelength (1 _rGhr ) of the pump radiation from the pump radiation _source (PLI);

GL1 first adhesive for fastening the sensor element to the first filter (F1);

GL2 second adhesive that is applied to the second lead frame surface (LF2);

GL3 third adhesive that is applied to the third lead frame surface (LF3);

GL4 fourth adhesive for fastening the lid (DL);

GT body of an electric guitar as an example of a musical instrument; HA bracket; hO fulfills h0 '+ hl + hl * s5g = h0; h0 'Offset value for the value of the intensity (l _pmp ) of the pump radiation (LB) emitted into the first transmission path (II) by the pump radiation source (PLI), which at the operating point is independent of the value of the transmission signal (S5) and thus independent on the value of the alternating component (S5w) of the transmission signal (S5) and independent of the value of the

The direct component (S5g) of the transmission signal (S5); hl proportionality factor for the value in the first transmission link

(II) by the pump radiation source (PLI) emitted intensity (l _pmp ) of the pump radiation (LB), which at the operating point depends on the value of the transmission signal (S5) and thus dependent on the value of the

AC component (S5w) of the transmission signal (S5) and is dependent on the value of the DC component (S5g) of the transmission signal (S5);

HD1 first horizontal driver stage (HD1) to control the first

horizontal line (LH1) of the first quantum bit to be controlled (QUB11) and for controlling the first shield line (SH1) and for controlling the second shield line (SH2);

HD2 second horizontal driver stage (HD2) to control the second

horizontal line (LH2) of the second quantum bit (QUB12) to be controlled and for controlling the second shield line (SH2) and for controlling the third shield line (SH3);

HD3 third horizontal driver stage (HD3) to control the third

horizontal line (LH3) of the third quantum bit to be controlled (QUB13) and for controlling the third shield line (SH3) and for controlling the fourth shield line (SH4);

HD-NV sensor element which has a high density of paramagnetic centers (NV1) at least locally in part of the sensor element. This part is preferably a substrate (D) with an at least local density of more than 10ppm, better than 20ppm of paramagnetic centers (NV1) based on the number of atoms in the considered

Room volume. The substrate (D) preferably comprises one or more groups (NVC) of paramagnetic centers (NV1), the density of paramagnetic centers (NV1) of more than 10 ppm, preferably more than 20 ppm, preferably within the respective group (NVC)

is exceeded. The entire substrate (D) can also have a density of paramagnetic centers (NV1) of more than 10 ppm, better than 20 ppm of paramagnetic centers (NV1). In the case of NV centers in diamond as the substrate (D), it is preferably an HD-NV diamond (HD-NV). hRa fulfills hRa '+ hRb + hRb * s5g = hRa; hRa 'Value of the noise of the pump radiation source (PLI) at the operating point, which is independent of the value of the transmission signal (S5) and thus independent of the value of the alternating component (S5w) of the transmission signal (S5) and independent of the value of the direct component (S5g) of the transmission signal ( S5) is; hRb Value of the noise of the pump radiation source (PLI), which is dependent on the value of the transmission signal (S5) and thus dependent on the value of the alternating component (S5w) of the transmission signal (S5) and dependent on the value of the direct component (S5g) of the transmission signal (S5) .

S1 first horizontal receiver stage (HS1), the one with the first horizontal

Driver stage (HD1) can form a unit for controlling the first quantum bit to be controlled (QUB11);

HS2 second horizontal receiver stage (HS2) that corresponds to the second horizontal receiver stage

Driver stage (HD2) can form a unit for controlling the second quantum bit to be controlled (QUB12);

HS3 third horizontal receiver stage (HS3) that corresponds to the third horizontal receiver stage

Driver stage (HD3) can form a unit for controlling the third quantum bit to be controlled (QUB13); il Instantaneous value in the first transmission link (II) through the

_Pump radiation _source (PLI) emitted intensity (I _pmp ) of the pump radiation (LB);

11 first transmission link;

\ 2 Value of the radiation intensity emitted by the compensation radiation source

(PLK) is sent out;

12 second transmission link;

13 third transmission link;

14 fourth transmission path;

IC integrated circuit; id intensity of the pump radiation (LB) after interaction with the

Sensor element that reaches the first optical filter (Fl) ifd the value of the intensity of the fluorescence radiation (FL) that the

Radiation receiver (PD) reached; ifl value of the intensity (l _fl ) of the fluorescence radiation (FL) which is the first

optical filter (F1) achieved;

Ifl intensity of the fluorescence radiation (FL); ift value of the intensity of the radiation in the first transmission path (II) that passes the first optical filter (F1) ig value of the total radiation that reaches the radiation receiver (PD);

IH horizontal electric current;

IH1 first horizontal stream. The first horizontal current is the electrical one

Current flowing through the first horizontal line (LH1).

IH2 second horizontal stream. The second horizontal stream is the electrical one

Current flowing through the second horizontal line (LH2). IH3 third horizontal stream. The third horizontal stream is the electrical current that flows through the third horizontal line (LH3).

IH4 fourth horizontal stream. The fourth horizontal stream is the electrical one

Current flowing through the fourth horizontal line (LH4). ik Proportional value of the intensity of the compensation radiation (KS), which the

Radiation receiver (PD) reached;

Intensity of compensation fluorescence radiation (KFL); lks intensity of the compensation radiation (KS); lpmp intensity of the pump radiation (LB);

Ipmpmax pump radiation intensity maximum;

Ipmpoff Bias value of the intensity (I _pmp ) of the pump radiation (LB);

IS insulation, e.g., spin-on glass;

ISH1 first horizontal shielding current passing through the first horizontal

Shielding line (SH1) flows;

ISH2 second horizontal shielding current Current flowing through the second

horizontal shield line (SH2) flows;

ISH3 third horizontal shielding current Current passing through the third horizontal

Shielding line (SH3) flows;

ISH4 fourth horizontal shielding current Current passing through the fourth horizontal

Shielding line (SH3) flows;

ISV1 first vertical shielding current through the first vertical

Shielding line (SV1) flows;

ISV2 second vertical shielding current passing through the second vertical

Shielding line (SV2) flows; IV vertical electric current. The vertical current is the electrical current that flows through the vertical line (LV);

IV1 first vertical stream. The first vertical current is the electrical current flowing through the first vertical line (LV1);

IV2 second vertical stream. The second vertical current is the electrical one

Current flowing through the second vertical line (LV2);

IV3 third vertical stream. The third vertical current is the electrical current flowing through the third vertical line (LV3);

IV4 fourth vertical stream. The fourth vertical stream is the electrical current that flows through the fourth vertical line (LV4); kO Offset constant for the value of the intensity of the

Compensation radiation source (PLK) emitted

Compensation radiation (KS) which is independent of the value of the compensation transmission signal (S7);

KFL compensating fluorescence radiation of the paramagnetic

Reference centers (NV2) in the material of the reference element. This is preferably the compensation fluorescence radiation of one or more paramagnetic reference centers (NV2) and / or one or more groups (NVC2) of paramagnetic

Reference centers (NV2). This is preferably the compensation fluorescence radiation from one or more NV centers and / or one or more groups of NV centers, the reference element preferably being one or more diamonds and / or nano-diamond with diamond as the material;

KH Contact between horizontal line (LH) and substrate (D). Such a

Contact is possible, but it is inferior to the other contacts disclosed in this document (KH11, KH22, KH33, KH44) to separate horizontal shield lines (SH1, SH2, SH3, SH4). KH11 first horizontal contact of the first quantum bit (QUB1). The first horizontal contact of the first quantum bit (QUB1) electrically connects the first horizontal shielding line (SH1) in the first quantum bit (QUB1) to the substrate (D) or an epitaxial layer (DEPI). In the case of diamond, the substrate material is preferably a contact that comprises titanium or is made of titanium;

KH22 second horizontal contact of the first quantum bit (QUB11) and first horizontal contact of the second quantum bit (QUB12). The first quantum bit (QUB11) and the second quantum bit (QUB12) share this contact in the example in FIG. The contact electrically connects the second horizontal shielding line (SH2) in the first quantum bit (QUB11) or second quantum bit (QUB12) to the substrate (D) or an epitaxial layer (DEPI). In the case of diamond, the substrate material is preferably a contact that comprises titanium or is made of titanium;

KH33 second horizontal contact of the second quantum bit (QUB12) and first horizontal contact of the third quantum bit (QUB13). The second quantum bit (QUB12) and the third quantum bit (QUB13) share this contact in the example in FIG. The contact electrically connects the third horizontal shielding line (SH3) in the second quantum bit (QUB12) or third quantum bit (QUB13) to the substrate (D) or an epitaxial layer (DEPI). In the case of diamond, the substrate material is preferably a contact that comprises titanium or is made of titanium;

KH44 second horizontal contact of the third quantum bit (QUB13). The second horizontal contact of the third quantum bit (QUB13) electrically connects the fourth horizontal shielding line (SH4) in the third quantum bit (QUB13) to the substrate (D) or an epitaxial layer (DEPI). In the case of diamond, the substrate material is preferably a contact that comprises titanium or is made of titanium; KNT contact or corresponding structure for collecting

Photoelectrons in a material of the sensor element; kRa value of the noise component of the value of the intensity of the

Compensation radiation source (PLK) emitted

Compensation radiation (KS) which is independent of the value of the compensation transmission signal (S7) and in particular is independent of the alternating component s7w of the compensation transmission signal (S7)

KS compensation radiation;

KT contrast. The contrast (KT) is used here as the maximum intensity (l _fl )

Fluorescence radiation (FL) at the magnetic flux density B of this maximum intensity divided by the limit value of the intensity (l _{f |} ) of the fluorescence radiation (FL) up to high magnetic flux densities B (see FIG. 28);

KTH cathode contact;

KV contact between vertical line (LV) and substrate (D). Such a

Contact is possible, but it is subordinate to the other contacts disclosed in this document (KV11, KH21, KH31, KV12, KH22, KH32) to separate vertical shielding lines (SV1, SV2).

KV11 first vertical contact of the first quantum bit (QUB11). The first

vertical contact of the first quantum bit (QUB11) electrically connects the first vertical shielding line (SV1) in the first quantum bit (QUB11) to the substrate (D) or an epitaxial layer (DEPI). In the case of diamond, the substrate material is preferably a contact that comprises titanium or is made of titanium;

KV21 first vertical contact of the second quantum bit (QUB12). The first vertical contact of the second quantum bit (QUB12) electrically connects the first vertical shielding line (SV1) in the second quantum bit (QUB12) to the substrate (D) or an epitaxial layer (DEPI). In the case of diamond, the substrate material is preferably a contact that comprises titanium or is made of titanium;

KV31 first vertical contact of the third quantum bit (QUB13). The first

vertical contact of the third quantum bit (QUB13) electrically connects the first vertical shielding line (SV1) in the third quantum bit (QUB13) to the substrate (D) or an epitaxial layer (DEPI). In the case of diamond, the substrate material is preferably a contact that comprises titanium or is made of titanium;

KV12 second vertical contact of the first quantum bit (QUB11). The second vertical contact of the first quantum bit (QUB11) electrically connects the second vertical shielding line (SV2) in the first quantum bit (QUB11) to the substrate (D) or an epitaxial layer (DEPI). In the case of diamond, the substrate material is preferably a contact that comprises titanium or is made of titanium;

KV22 second vertical contact of the second quantum bit (QUB12). The second vertical contact of the second quantum bit (QUB12) electrically connects the second vertical shielding line (SV2) in the second quantum bit (QUB12) to the substrate (D) or an epitaxial layer (DEPI). In the case of diamond, the substrate material is preferably a contact that comprises titanium or is made of titanium;

KV32 second vertical contact of the third quantum bit (QUB13). The second vertical contact of the third quantum bit (QUB13) electrically connects the second vertical shielding line (SV2) in the third quantum bit (QUB13) to the substrate (D) or an epitaxial layer (DEPI). In the case of diamond, the substrate material is preferably a contact that comprises titanium or is made of titanium;

Fluorescence radiation wavelength of fluorescence radiation (FL) des

paramagnetic center (NV1) and / or the paramagnetic centers (NV1) and / or the group (NVC) of paramagnetic centers (NV1). For NV centers in diamond as paramagnetic centers (NV1) this fluorescence radiation wavelength (lh) is typically approx.

637nm, so it is typically red; l ^ i compensation fluorescence radiation wavelength of the

Compensation fluorescence radiation (KFL) of the paramagnetic reference center (NV2) and / or the paramagnetic

Reference centers (NV2) and / or the group (NVC2) of paramagnetic reference centers (NV2). For NV centers in diamond as paramagnetic reference centers (NV2) this lies

Compensation fluorescence radiation wavelength typically around 637 nm, so it is typically red;

Compensation radiation wavelength of the compensation radiation (KS).

Should the compensation radiation not directly irradiate the radiation receiver (PD), but a reference element with a

Reference center (NV2) or several reference centers (NV2) or one or more groups (NVC2) of reference centers (NV2), in order to induce them to emit compensating fluorescence radiation (KFL), which then instead of compensating radiation (KS) on the radiation receiver (PD) hits, it will

Compensation radiation wavelength chosen so that it is the paramagnetic reference center (NV2) and / or the

paramagnetic reference centers (NV2) and / or the group (NVC2) paramagnetic reference centers (NV2) and / or the groups (NVC2) paramagnetic reference centers (NV2) for emitting compensating fluorescence radiation (KFL) with a

Can excite compensation fluorescence wavelength (l _M ). In the case of NV centers in diamond as paramagnetic reference centers (NV2), this compensation radiation wavelength is then preferably in a wavelength range of 500-600 nm

A compensation radiation source (PLK) then uses a laser diode with a wavelength of 550 nm or 520 nm. l _{r [gir} pump radiation wavelength of the pump radiation (LB). The

Pump radiation wavelength is chosen to be that

paramagnetic center (NV1) and / or the paramagnetic centers (NV1) and / or the group (NVC) of paramagnetic centers (NV1) and / or the groups (NVC) of paramagnetic centers (NV1) for emitting fluorescent radiation (FL) with a

Can excite fluorescence radiation wavelength (lh). In the case of NV centers in diamond as paramagnetic centers (NV1) this lies

Pump radiation wavelength preferably in a wavelength range of 500-600 nm. A laser diode with a wavelength of 550 nm or 520 nm is preferably used as the pump radiation source (PLI);

LI first coil. The first coil is an optional item that is preferably a

Is part of the integrated circuit (IC) and can generate a magnetic field. The first coil is preferably energized by the integrated circuit (IC);

L2 second coil. The second coil is a further optional element which is preferably part of the integrated circuit (IC) and can generate a magnetic field. The second coil is preferably energized by the integrated circuit (IC);

L3 third coil. The third coil is another optional item that

is preferably part of the integrated circuit (IC) and can generate a magnetic field. The third coil is preferably energized by the integrated circuit (IC);

L4 fourth coil. The fourth coil is a further optional element which is preferably part of the integrated circuit (IC) and can generate a magnetic field. The fourth coil is preferably energized by the integrated circuit (IC);

L5 fifth coil. The fifth coil is another optional element that is preferably part of the integrated circuit (IC) and is a can generate magnetic field. The fifth coil is preferably energized by the integrated circuit (IC);

L6 sixth coil. The sixth coil is a further optional element that is preferably part of the integrated circuit (IC) and can generate a magnetic field. The sixth coil is preferably energized by the integrated circuit (IC).

L7 seventh spool. The seventh coil is a further optional element which is preferably part of the integrated circuit (IC) and can generate a magnetic field. The seventh coil is preferably energized by the integrated circuit (IC);

LB pump radiation;

LC compensation coil. The compensation coil can, for example, only have a first coil (LI) or a large number of, possibly differently energized, for example a combination of several, possibly different coils (LI to L7) or even just a single line (LH), in their vicinity, depending on different control signals the relevant paramagnetic center (NV1) or the

paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1), or the

Compilation of such lines (LH, LV);

LCK further compensation coil;

LED1 first test LED;

LEDDR light source driver for the pump radiation source (PLI);

LF1 first lead frame area;

LF2 second lead frame area;

LF3 third lead frame area;

LF4 fourth lead frame area; LF5 fifth lead frame area;

LF6 sixth lead frame area;

LF7 seventh lead frame area;

LH horizontal pipe. Preferred is the horizontal line from one for

Radiation of the pump radiation _wavelength (l _rGhr ) of the pump radiation (LB) made of transparent material, for example ITO. The horizontal line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

LH1 first horizontal line. The first horizontal line is preferably made from a material that is transparent to radiation of the pump radiation _wavelength (I _rigir ) of the pump radiation (LB), for example ITO. The first horizontal line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

LH2 second horizontal line. The second horizontal line is preferably made of a material that is transparent to radiation of the pump radiation _wavelength (1 _rGhr ) of the pump radiation (LB), for example ITO. Preferably the second horizontal line is on the

Surface (OFL1) of the substrate (D) manufactured and firmly connected to this;

LH3 third horizontal line. The third horizontal line is preferably made of a material that is transparent to radiation of the pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB), for example ITO. The third horizontal line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

LH4 fourth horizontal line. The fourth horizontal line is preferably made of a material that is transparent to radiation of the pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB), for example ITO manufactured. The fourth horizontal line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

UV control and evaluation unit for controlling the pump radiation source

(PLI) by means of a transmission signal (S5) and reading out the

Radiation receiver (PD) or the photoelectrons of the

paramagnetic centers (NV1) by means of a photo current, for example via a contact (KNT). A lock-in amplifier (FIG. 1) is preferably used as part of the control and evaluation unit for processing the receiver output signal (SO).

Typically, the intensity (I _pmp ) of the pump radiation (LB) of the pump radiation source (PLI) is modulated by means of an alternating component (S5w) of the transmission signal (S5) with a frequency of 1 Hz up to 100 M Hz. This alternating component (S5w) of the transmission signal (S5) is preferably used as the carrier frequency of the measurement signal (MES) for the lock-in amplifier and is output as a sensor rise signal (out). In the case of a pickup, this sensor output signal (out) is then converted into acoustically equivalent signals by means of suitable electronic units. This can preferably take place in a generally customary standardized digital form (for example as an MP3 stream) or as an analog electrical signal.

LOT Plumb line (LOT) of the solder from the location of the quantum dot of the paramagnetic

Center (NV1) or the focus of the paramagnetic centers (NV1) or the focus of the group (NVC) or the groups (NVC) of paramagnetic centers (NV1) to the surface (OFL1) of the substrate (D) and / or the possibly existing epitaxial layer (DEPI). It is an imaginary line;

LTG line whose current is to be measured;

LV vertical line. Preferred is the vertical line from one for

Radiation of the pump radiation _wavelength (l _rirr ) of the pump radiation (LB) made of transparent material, for example ITO. Is preferred the vertical line is made on the surface (OFL1) of the substrate (D) and firmly connected to it;

LV1 first vertical line. The first vertical line is preferably made of a material that is transparent to radiation of the pump radiation wavelength (I _{r [gir} ) of the pump radiation (LB), for example ITO. The first vertical line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

LV2 second vertical line. The second vertical line is preferably made of a material that is transparent to radiation of the pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB), for example ITO. The second vertical line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

LV3 third vertical line. The third vertical line is preferably made from a material that is transparent to radiation of the pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB), for example ITO. The third vertical line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

LV4 fourth vertical line. The fourth vertical line is preferably made from a material that is transparent to radiation of the pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB), for example ITO. The fourth vertical line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

LWK1 first shaft coupling;

LWK2 second shaft coupler;

LWL Fiber optic cable for transporting the electromagnetic pump radiation

(LB) and / or the fluorescence radiation (FL). The optical waveguide is preferably the environmental conditions such as high

Adapt temperatures or radiation fields and achieve both for the pump radiation (LB) as well as for the fluorescence radiation (FL) an optimal transmission power in the form of the lowest possible attenuation. Glass, Si02 and its compounds, diamond, ITO (indium tin oxide) and other materials that are optically transparent in the relevant spectral ranges of the pump radiation _wavelength (l _rigir ) and / or fluorescence _wavelength (lp), such as plastics, are used as the material of the optical waveguide. in question.

LWL1 first fiber optic cable to transport the electromagnetic

Pump radiation (LB). The first optical waveguide is preferably the environmental conditions such as high temperatures or

Adapt radiation fields and achieve an optimal transmission power in the form of the lowest possible attenuation for the pump radiation (LB). Glasses, SiO2 and its compounds, diamond, ITO (indium tin oxide) and others optically come into the relevant spectral range as the material of the first optical waveguide

_Pump radiation _wavelength (l _rigir ) transparent materials, such as plastics, in question.

LWL2 second fiber optic cable for transporting the electromagnetic

Fluorescence radiation (FL). The second optical waveguide is preferably the environmental conditions such as high temperatures or

Adapt to radiation fields and achieved for both

Fluorescence radiation (FL) an optimal transmission performance in the form of the lowest possible attenuation. The second optical waveguide for the pump radiation (LB) preferably achieves the lowest possible transmission power in the form of the greatest possible attenuation, so that the first filter (F1) can then be omitted, since the second optical waveguide can then perform this function. If the second optical waveguide has these properties, the first filter (F1) is present in the sense of this disclosure and possibly covered by the claims. Glasses are used as the material of the second optical waveguide, Si02 and its compounds, diamond, ITO (indium tin oxide) and other materials that are optically transparent in the relevant spectral ranges of the fluorescence radiation wavelength (l ^), such as plastics, are in question. iC control device;

Ml first multiplier;

Ml 'additional first multiplier;

M2 second multiplier;

M2 'additional second multiplier;

MAS shielding;

ME1 first medium (e.g. air or vacuum or the material of a

Optical fiber (LWL) or another optical

Functional element)

MES measurement signal. The measurement signal is the reference signal with which the first

Multiplier (Ml) and the loop filter (TP) that

Compare receiver output signal (SO) and use the

Flalteschaltung (S&FI) form the filter output signal (S4). In many examples, the measurement signal here is equal to the alternating component (s5w) of the transmission signal (S5);

MFC magnetic field control. The magnetic field control (MFC) is preferred

Controller (RG), the task of which is to globally compensate for an external magnetic field with an external magnetic flux density B through active counter-regulation, for example by means of a compensation coil (LC);

MFK magnetic field control device;

MFS magnetic field sensor; MO assembly opening;

MPZ diamagnetic material with one paramagnetic center (NV1) or several paramagnetic centers (NV1) of the sensor element. The diamagnetic material is preferably diamond and the paramagnetic center or centers (NV1) are NV centers. The paramagnetic center or centers (NV1) emit fluorescence radiation (FL) with a fluorescence radiation wavelength (lp) when irradiated with pump radiation (LB) from the pump radiation source (PLI). This fluorescence radiation (FL) from the parametric center or centers (NV1) preferably depends on the magnetic flux density B at the location of the respective paramagnetic center (NV1) and possibly other parameters such as pressure and / or temperature. The crystal alignment of the material of the sensor element can typically influence this emission and the dependence of this emission of the fluorescence radiation (FL) on the magnetic flux B. The paramagnetic center or centers (NV1) are preferably one or more NV centers. The material is preferably diamond.

MPZi diamagnetic material with one or more paramagnetic

Centers (NV1), which are preferably one or more NV centers in diamond. In this case, the diamagnetic material is comprised of the first of n sensor elements of an exemplary system for detecting the vibration of n mechanically vibratable subsystems (MS _1; MS ₂ ,... MS _n ) assigned to these n sensor elements;

MPZ ₂ diamagnetic material with one or more paramagnetic

Centers (NV1), which are preferably one or more NV centers in diamond. In this case, the diamagnetic material is assigned by the second of n sensor elements of an exemplary system for detecting the vibration of n of these n sensor elements mechanically vibrating subsystems (MS _!, MS ₂ , ... MS _n )

includes;

MPZ _n diamagnetic material with one or more paramagnetic

Centers (NV1), which are preferably one or more NV centers in diamond. In this case, the diamagnetic material is comprised of the nth of n sensor elements of an exemplary system for detecting the vibration of n mechanically vibratable subsystems (MS _1; MS ₂ ,... MS _n ) assigned to these n sensor elements;

MQ1 first field source for generating a magnetic or electric

Field that is not in the reference system of the sensor element, so that, for example, in combination with an oscillating system (MS), an alternating electromagnetic field is generated. The first field source can be, for example, a magnetized ferromagnetic material, a guitar string or a

Act permanent magnet or the like. In a further embodiment, it may also be an electrically charged structure, if necessary. The field source preferably generates a static magnetic field if the entire system is not set into mechanical vibrations and has a total magnetic flux density at the location of the sensor element, for example a diamond with NV centers as paramagnetic centers (NV1), together with the second rock source (MQ2) B from preferably 1-20 mT, less preferably from 0.1 mT to 50 mT, in a direction different from the axis of the paramagnetic centers (NV1), preferably from the axis of the NV centers that are preferably used.

MQli first field source, which is the first of n sensor elements of a

exemplary system for detecting the vibration of n these n sensor elements each assigned mechanically

oscillatory subsystems (MS _1; MS ₂ , ... MS _n ) is assigned; MQ1 ₂ first field source, the second of n sensor elements one

exemplary system for detecting the vibration of n these n sensor elements each assigned mechanically

vibratory subsystems (MS _!, MS ₂ , ... MS _n ) is assigned;

MQl _n first field source, the nth of n sensor elements of a

exemplary system for detecting the vibration of n these n sensor elements each assigned mechanically

oscillatable subsystems (MSi, MS ₂ , ... MS _n ) is assigned;

MQ2 optional second field source for generating a magnetic or

electric field, which is preferably at rest in the reference system of the sensor element. It preferably serves the

Working point setting to maximize the sensitivity of the sensor system and, if necessary, to linearize the measuring range. The second field source can be, for example, a magnetized ferromagnetic material or a permanent magnet or a compensation coil (LC) through which an electric current flows. The field source preferably generates a static or slow readjustment by means of a

Compensation coil (LC) quasi-static magnetic field when the entire system is not set into mechanical vibrations. The magnetic flux density of the second field source is preferably chosen so that, together with the first magnetic flux density generated by the first magnetic field source (MQ1), a total magnetic flux density at the location of the paramagnetic centers (NV1) results, which results in an optimal sensitivity of the

Fluorescence radiation (FL) based on a change in

Fluorescence radiation (FL) with a change in the magnetic flux density B at the location of the paramagnetic center (NV1) or the paramagnetic centers (NV1) is achieved. The magnetic second flux density B ₀ , which is generated by the second field source at the location of the paramagnetic center or centers (NV1), is preferably as follows selected that at the location of the paramagnetic center or centers (NV1) has a total magnetic flux density of 1-20 mT in a direction different from the axis of the paramagnetic center or centers (NV1), for example to the axis of the NV center or centers .

MQ2i second field source, which is the first of n sensor elements of a

exemplary system for detecting the vibration of n these n sensor elements each assigned mechanically

oscillatable subsystems (MSi, MS ₂ , ... MS _n ) is assigned;

MQ2 ₂ second field source, the second of n sensor elements one

exemplary system for detecting the vibration of n these n sensor elements each assigned mechanically

oscillatory subsystems (MS _1; MS ₂ , ... MS _n ) is assigned;

MQ2 _n second field source, which is the nth of n sensor elements of a

exemplary system for detecting the vibration of n these n sensor elements each assigned mechanically

oscillatable subsystems (MSi, MS ₂ , ... MS _n ) is assigned;

MS Schematic representation of a mechanically oscillating system in a preferred exemplary frequency range from 1 Hz to 100 MFIz. For example, it can be a vibrating one

Act device part of a mechanical device such as a sound box of a musical instrument or a vibrating tensioned string. Other designs are e.g. a vibrating mechanical component or an organically movable body part. The vibrations preferably have a harmonic component.

MS _X first mechanically oscillating subsystem of n subsystems of a mechanically oscillating system (MS), for example an electric guitar (GT), where n stands for a whole positive number; MS ₂ second mechanically oscillating subsystem of n subsystems of a mechanically oscillating system (MS), for example an electric guitar (GT), where n stands for a whole positive number;

MS _X third mechanically oscillating subsystem of n subsystems of a mechanically oscillating system (MS), for example an electric guitar (GT), where n stands for a whole positive number; n in Figure 51: Branch path if the question is answered in the negative. Elsewhere in this document: a positive whole number;

Surface normals of the first surface (OFL1) of the substrate (D);

Mi surface normal of the second surface (OFL2) of the substrate (D);

NBR groove width;

NV11 quantum dot with one paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NVC) of paramagnetic centers (NV1) of the quantum bit (QUB11) in the first vertical column and in the first horizontal row of a one-dimensional quantum register with several Quantum bits (QUB) or a two-dimensional quantum register with several quantum bits (QUB);

NV12 quantum dot with one paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NVC) of paramagnetic centers (NV1) of the quantum bit (QUB11) in the first vertical column and in the second horizontal row of a one-dimensional quantum register with several Quantum bits (QUB) or a two-dimensional quantum register with several quantum bits (QUB);

NV13 Quantum dot with one paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NVC) of paramagnetic centers (NV1) of the quantum bit (QUB11) in the first vertical column and in the third horizontal row of a one-dimensional quantum register with several quantum bits (QUB) or a two-dimensional quantum register with several

Quantum bits (QUB);

NV21 quantum dot with one paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NVC) of paramagnetic centers (NV1) of the quantum bit (QUB11) in the second vertical column and in the first horizontal row of a two-dimensional quantum register with several Quantum bits (QUB);

NV22 quantum dot with one paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NVC) of paramagnetic centers (NV1) of the quantum bit (QUB11) in the second vertical column and in the second horizontal row of a two-dimensional quantum register with several Quantum bits (QUB);

NV23 quantum dot with one paramagnetic center (NV1) or several paramagnetic centers (NV1) or a group or groups (NVC) of paramagnetic centers (NV1) of the quantum bit (QUB11) in the second vertical column and in the third horizontal row of a two-dimensional quantum register with several Quantum bits (QUB);

NVC group (cluster) of paramagnetic centers (NV1). Such a group includes at least one paramagnetic center (NV1). However, such a group preferably comprises a plurality of paramagnetic centers (NV1). The density of the paramagnetic centers (NV1) within the group is preferably higher than 10 ppm, better higher than 20 ppm, based on the number of atoms in the volume of the group.

The area of such a group of paramagnetic centers is preferably HD-NV diamond, ie the material is preferably diamond and the density of the paramagnetic centers, which are then NV centers, is so high that the criteria for HD-NV specified in this document - Diamond are met. Ie the density should be about within the group lOppm, better 20ppm. If centers other than NV centers and / or materials other than diamond are used, this applies accordingly. The density of the paramagnetic centers (NV1) within this group is preferably so high that the

Coupling paramagnetic centers (NV1) with one another within the group and, if necessary, preferably developing mixed states. The density of the paramagnetic centers (NV1) within such a group is very particularly preferably so high that the

paramagnetic centers (NV1) show collective behavior. The group has an extension (d) of the collection of paramagnetic centers (NV1) perpendicular to the pointing vector of the incident pump radiation (LB) within a sensor element and a thickness (d _NV c) of the group (NVC) of paramagnetic centers (NV1) in the substrate ( D) parallel to the pointing vector of the incident pump radiation (LB). The thickness (d _NV c) of the group (NVC) of paramagnetic centers (NV1) is preferably in the order of magnitude less

_Pump radiation _wavelengths (l _rGhr ) of the pump radiation. In this document, the reference symbol NVC denotes a single group, but also several groups as a whole. The maximum density of a group is calculated from the inverse of the smallest spherical volume that at least two paramagnetic centers (NV1) occupy within the group. Multiplied by the number of paramagnetic centers in this volume of space. The group is limited by the ellipsoidal volume, which leads to a reduction in density to 50%. The main axes are determined in such a way that the volume is minimal and nevertheless all paramagnetic centers (NV1) of the group are included;

NVC2 Group (cluster) of paramagnetic reference centers (NV2). Such

The group includes at least one paramagnetic reference center (NV2). However, such a group preferably comprises a plurality of paramagnetic reference centers (NV2). The density of paramagnetic reference centers (NV2) within the group is preferably higher than lOppm, better higher than 20ppm based on the number of atoms in the volume of the group. The area of such a group of paramagnetic centers is preferred HD-NV diamond, ie the material is preferably diamond and the density of the paramagnetic centers (NV1), which are then NV centers, is so high that the criteria named in this document for HD-NV-Diamant are met. In other words, the density within the group should be over lOppm, better 20 ppm. If centers other than NV centers and / or materials other than diamond are used, this applies accordingly. The density of the paramagnetic reference centers (NV2) within this group is preferably so high that the paramagnetic reference centers (NV2) within the group couple with one another and, if necessary, preferably develop mixed states. Very particularly preferably, the density of the paramagnetic reference centers (NV2) within such a group is so high that the paramagnetic reference centers (NV2) show collective behavior. The group has an extension (d) of the collection of paramagnetic reference centers (NV2) perpendicular to the pointing vector of the incident compensation radiation (KS) within a sensor element and a thickness (d _NV c2) of the group (NVC2) of paramagnetic reference centers (NV2) in the substrate ( D) parallel to the pointing vector of the incident compensation radiation (KS). The thickness (d _NV c2) of the group (NVC2) is preferred

paramagnetic reference centers (NV2) in the order of magnitude of a few compensation radiation wavelengths (l ^) the

Compensation radiation (KS). In this document, the reference symbol NVC2 denotes a single group, but also several groups as a whole. The maximum density of a group is calculated from the inverse of the smallest, spherical volume that at least two paramagnetic reference centers (NV2) occupy within the group. Multiplied by the number of paramagnetic reference centers (NV2) in this volume of space. The group is limited by the ellipsoidal volume, which leads to a reduction in density 50% leads. The main axes are determined so that the

Volume becomes minimal and still all paramagnetic

Reference centers (NV2) of the group are included;

NV1 paramagnetic center or paramagnetic centers in the material of the

Sensor element. The paramagnetic centers radiate

Irradiation with pump radiation (LB) from the pump radiation source (PLI) with a pump radiation wavelength (lh) fluorescent radiation (FL). This fluorescence radiation (FL) from one or more parametric centers typically depends on the magnetic flux density B at the location of the respective paramagnetic center and other physical parameters, such as pressure P, acceleration a, gravitational field strength velocity v, electrical flux density D, temperature q, ionizing intensity Radiation. The

The crystal alignment of the material of the sensor element can typically influence this emission and the dependence of the intensity (l _{f |} ) of this emission of the fluorescence radiation (FL) on the magnetic flux B or on the other physical parameters at the location of the paramagnetic center or centers. The paramagnetic center or centers are preferably one or more NV centers in one or more diamonds. The material is preferably diamond. In which

The sensor element is preferably one or more diamond crystals, even more preferably one or more diamond nanocrystals with preferably a very high density of NV centers. The paramagnetic centers are preferably located in

Sensor element at least locally in a very high density, so that they can couple with each other and generate collective effects that make the intensity (l _fl ) of the fluorescent radiation (FL) of the paramagnetic centers dependent on the magnetic flux density B or the other physical parameters increase. The paramagnetic centers are preferably located in at least a locally high density the crystal, for example in an HD-NV diamond as NV centers. The use of centers other than NV centers as

Paramagnetic reference centers, e.g. the TRI centers, SiV centers, the GeV centers, etc. are conceivable. On the book by A.M. Reference is made here to Zaitsev "Optical Properties of Diamond, A Data Handbook", Springer 2001 ISBN 978-3-662-04548-0. The use of other materials such as silicon (Si) or silicon carbide (SiC) is also conceivable. Suitable centers in silicon are the so-called G centers.

Suitable centers in SiC are so-called V centers. The

_Pump radiation _wavelength (l _rGTΐr ) for G centers in silicon and V centers in SiC is typically in the infrared range, since silicon and SiC are only transparent there. For these specific examples, the green pump radiation is actually infrared. The G centers or the V centers are either read out using the

Fluorescence radiation (FL) of the G centers or V centers, the fluorescence wavelength (l ^) of the G centers in silicon or the V centers in SiC being in the infrared. Another option for reading out the G centers or V centers is electronic

Readout as shown by way of example in this document with the aid of FIGS. 77 and 79 and 83;

NV2 paramagnetic reference center in the material of the

Reference sensor element. The paramagnetic reference centers (NV2) radiate when irradiated with compensation radiation (KS)

Compensation radiation source (PLK)

Compensation fluorescence radiation (KFL) with a

Compensation fluorescence radiation wavelength (l ^). This compensation fluorescence radiation (KFL) of a parametric reference center (NV2) typically depends on the magnetic flux density B at the location of the respective paramagnetic reference center and other physical parameters such as pressure P, acceleration a, gravitational field strength Velocity v, electrical flux density D, temperature q, intensity of ionizing radiation. Therefore, the paramagnetic reference centers are preferably placed at a location of defined magnetic flux density B or at a location of defined values of the other physical parameters, such as pressure P, acceleration a, gravitational field strength velocity v, electrical flux density D, temperature q, intensity of ionizing radiation or with a shield (AS). For example, this location can be inside a tubular conductor, for example a copper or metal pipe, where the electrical current flowing through this conductor is to be detected with the aid of the sensor element with the paramagnetic center or centers (NV1). In that case, the reference element is generated using the paramagnetic

Reference centers a compensation reference radiation (KFL), which, for example, the value of the sensor element and the

Reference element flowing through together magnetic

Flux density portion of the magnetic flux density B reproduces. The crystal alignment of the material of the reference sensor element can typically cause this radiation and the dependence of it

Radiation of the compensation fluorescence radiation (KFL) from the magnetic flux B and from the other physical parameters, such as pressure P, acceleration a, gravitational field strength velocity v, electrical flux density D, temperature q, intensity of ionizing radiation, at the location of the paramagnetic

Influence the reference center. With the paramagnetic

The reference center is preferably an NV center. The material is preferably diamond. In which

The reference sensor element is preferably a diamond crystal, even more preferably one or more diamond nanocrystals. The reference sensor element preferably has more than one paramagnetic reference center. The type of paramagnetic reference centers is preferably the same as the type of paramagnetic centers (NV2). For example, the

paramagnetic reference centers prefer NV centers in diamond when the paramagnetic centers (NV1) are NV centers. In the case of equality of the types of centers, this is

Compensation radiation _wavelength (l _{| <5} ) of the compensation radiation (KS) preferably equal to the pump radiation _wavelength (l _rGhr ) of the pump radiation (LB). The fluorescence radiation wavelength (l _h ) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) - eg 637nm for NV centers - is then equal to

Compensation fluorescence wavelength (l _{M |} ) der

Compensation fluorescence radiation (KFL) of the paramagnetic reference centers. The reference sensor element preferably comprises nanocrystals with preferably a very high density of NV centers. The paramagnetic centers are preferably located in

Reference sensor element, at least locally, in a very high density, so that they can couple with one another and can generate collective effects that the dependence of the intensity (l _{kf |} ) of

Compensation fluorescence radiation (KFL) of the paramagnetic reference centers from the magnetic flux density B and possibly other physical parameters, such as pressure P, acceleration a, gravitational field strength velocity v, electrical flux density D, temperature q, intensity of ionizing radiation, still increase.

The paramagnetic reference centers are preferably in at least locally high density in the respective crystal, for example as NV centers in an HD-NV diamond. The use of centers other than NV centers as paramagnetic reference centers, for example the TR1 centers, SiV centers , the GeV centers etc. is conceivable. On the book by A.M. Zaitsev "Optical Properties of Diamond, A Data

Handbook ", Springer 2001 ISBN 978-3-662-04548-0 is referred to here. The use of other materials such as silicon (Si) or silicon carbide (SiC) is also conceivable. Suitable centers in silicon are the so-called G centers. Suitable centers in SiC are so-called V centers. The pump radiation _wavelength (l _rGhr ) for G centers in silicon and V centers in SiC is typically in the infrared range, since silicon and SiC are only transparent there. For these specific examples, the green pump radiation is actually infrared. The G centers or the V centers are read out either by means of the fluorescence radiation (FL) from the G centers or V centers, the fluorescence wavelength (lh) of the G centers in silicon or the V centers in SiC in each case lies in the infrared. Another option for reading out the G centers or V centers is electronic

Readout as shown by way of example in this document with the aid of FIGS. 77 and 79 and 83;

O measurement object;

OF1 first matching circuit;

OF2 second matching circuit;

OF3 third matching circuit;

OF3 'another third matching circuit;

OF4 fourth matching circuit;

OFL1 first surface of the sensor element, which is preferably plane-parallel to an opposite second surface (OFL2) of the sensor element.

OFL2 second surface of the sensor element, which is preferably plane-parallel to an opposite first surface (OFL1) of the sensor element. out sensor output signal; out ¹ additional sensor output signal; out "second sensor output signal;

P in Figure 51 of this document: positive branching path if the

Question; PD1 radiation receiver. The radiation receiver is for the

Fluorescence radiation (FL) of the paramagnetic centers (NV1) in the material of the sensor element is sensitive. This is preferably the fluorescence radiation (FL) from one or more NV centers, the sensor element preferably comprising one or more nano-diamond with diamond as the material. The receiver is preferably part of the integrated circuit (IC). It is preferably a photodiode. It can be, for example, a photodiode or an APD (avalanche photo diode) or a SPAD (single photo avalanche diode) and / or another photosensitive detector which has an irradiation intensity with electromagnetic radiation in the wavelength range of

Fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) of the paramagnetic centers (NV1) transformed into electrical signals, namely current or / and voltage signals. Particular advantages result if the paramagnetic centers (NV1) and thus the sensor elements themselves are used as radiation receivers (PD) in that the photoelectrons of the paramagnetic centers (NV1) of the material of the sensor element are sucked out and detected. In this case, the separate radiation receiver (PD) is replaced by the sensor element. The claims are to be understood in each case in such a way that the simultaneous use of the sensor element as a radiation receiver (PD) is also covered by the claims. This also applies in particular when the suction of the charge carriers prevents the emission of fluorescent radiation (FL), i.e. this is only virtual. As an alternative detection method, in addition to recording the intensity (l _{f |} ) of the fluorescence radiation (FL), electrons generated in the sensor element by the photo effect can also be detected and evaluated directly;

PLI pump radiation source. The pump radiation source can also be a

Be a laser diode or another suitable light source. The

Pump radiation source emits pump radiation (LB), which the paramagnetic centers (NV1) in the material of the sensor element to emit fluorescent radiation (FL) stimulates. For example, this pump radiation source (PLI) in the form of the first laser can be a first laser diode from Osram of the PLT5 520B type with 520 nm for use with NV centers as paramagnetic centers (NV1), which is available from specialist retailers . However, circularly polarized pump radiation sources are preferably used.

The pump radiation source (PLI) is preferably arranged opposite the material surface of the sensor element, for example the surface of an HD-NV diamond, that a maximum of

Pump radiation power enters the material of the sensor element Typically, this means a preferably vertical arrangement of the sensor element surface, for example the surface of an HD-NV diamond, opposite the pump radiation beam (LB) from the pump radiation source. Particular advantages result if the excitation of the paramagnetic center or centers (NV1) is achieved by means of an electric current through the sensor element. In this connection, reference is made, for example, to DE 4 322 830 A1

pointed out that describes such a suggestion. In this case, the pump radiation source (PLI) is replaced by the sensor element itself. The claims are to be understood in any case in such a way that the simultaneous use of the sensor element as a radiation source (PLI) is also covered by the claims. This also applies in particular when no pump radiation (LB) occurs, that is to say it is only virtual. The pump radiation (LB) from the pump radiation source is used to excite magnetic or electrically sensitive paramagnetic centers (NV1), preferably NV centers in diamond. The

The pump radiation _wavelength (l _rGTΐr ) of the pump radiation _source (PLI) is preferably selected so that the paramagnetic center or centers (NV1) generate a photostable optimal fluorescence radiation (FL), for example to detect the mechanical oscillations of the mechanically oscillating system (MS). The _Pump radiation _wavelength (l _rGTΐr ) is preferably in a wavelength range of 500-600 nm for optimal excitation of NV centers in diamond. A laser diode with a wavelength of 550 nm or 520 nm is preferably used as the pump radiation source.

PLK compensation radiation source. The compensation radiation source can also be a laser diode or another suitable light source. The compensation radiation source is preferably constructed in the same way as the pump radiation source (PLI). For example, this compensation radiation source (PLK) in the form of the second laser can be a second laser diode from Osram of the PLT5 520B type, which is available from specialist dealers.

PU exemplary pickup of the exemplary electric guitar (GT) with

Exemplary visible diamonds as exemplary quantum sensor sensor elements, the diamonds selected by way of example preferably have one of the cuts listed in this document and are designed as jewelry diamonds and the diamonds preferably have a red color and the diamonds preferably paramagnetic centers (NV1), specifically preferred NV centers as paramagnetic centers (NV1) and where the diamonds are preferably irradiated with green pump radiation (LB) during musical instrument operation and where preferably the red fluorescent radiation (FL) of the exemplary NV centers during this operation for a human observer with normal vision is visible and with a control and

Evaluation circuit (LIV) converts vibrations from device parts of the musical instrument into electrical signals in particular, which are further processed.

PWM pulse width modulation;

PZ center that serves as a pump radiation source (PLI). For example, it can be an H3 center in a diamond as a sensor element, that emits green pump radiation (LB) when a current flows in the diamond. This green pump radiation from the exemplary H3 center can then be used to excite a paramagnetic center (NV1), for example an NV center in the exemplary diamond, to emit fluorescence radiation (FL).

PZC Group (cluster) of centers (PZ) that serve as pump radiation sources (PLI). Such a group includes at least the center (PZ). However, such a group preferably comprises a plurality of such centers (PZ). The density of the centers (PZ) within the group is preferably higher than 10 ppm, better higher than 20 ppm, based on the number of atoms in the volume of the group. The density of the centers (PZ) within this group is preferably so high that the centers (PZ) within the group couple with one another and, if necessary, preferably develop mixed states. Very particularly preferably the density of the centers (PZ) within such a group is so high that the centers (PZ) show collective behavior. The thickness (d _PZC ) of the group (PZC) of these centers (PZ) is _preferably in the order of magnitude of a few pump radiation _wavelengths (1 _rGhr ) of the pump radiation (LB). In this document, the reference symbol PZ denotes a single group but also several groups as a whole. The maximum density of a group is calculated from the inverse of the smallest spherical volume that at least two of these centers (PZ) occupy within the group. Multiplied by the number of centers (PZ) in this volume of space. The group is limited by the ellipsoidal volume, which leads to a reduction in density to 50%. The main axes are determined in such a way that the volume is minimal and nevertheless all centers (PZ) of the group are included;

Ql first quartz crystal;

Q2 second quartz crystal; QUALU1 first quantum ALU. An exemplary first quantum ALU in this document consists of a first quantum dot (NV11) and at least one first nuclear quantum dot (Clli). The exemplary first quantum ALU of Figure 81 consists of a first quantum dot (NV1) and a first nuclear quantum dot (Clli) of the first quantum ALU and a second nuclear quantum dot (CI 1 ₂ ) of the first quantum ALU and a third nuclear quantum dot (Cll ₃ ) of the first quantum ALU (FIG 81);

QUALU2 'second quantum ALU. An exemplary second quantum ALU in this document consists of a second quantum dot (NV12) and at least one second nuclear quantum dot (C ^). The exemplary second quantum ALU of FIG. 81 The exemplary second quantum ALU consists of a second quantum dot (NV12) and a first

Nuclear quantum dot (CI2i) of the second quantum ALU and a second nuclear quantum dot (CI2 ₂ ) of the second quantum ALU and a third nuclear quantum dot (CI2 ₃ ) of the second quantum ALU (FIG. 81);

QUB quantum bit;

QUB11 first quantum bit in the first vertical column and the first

horizontal line of a quantum register;

QUB12 second quantum bit in the first vertical column and the second

horizontal line of a quantum register;

QUB13 third quantum bit in the first vertical column and the third

horizontal line of a quantum register; r Distance between a line (LH, LV, LTG) and the paramagnetic one

Center (NV1) or the paramagnetic centers (NV1) or the group or groups (NVC) of paramagnetic centers (NV1);

RE reflector;

RG controller. The regulator preferably has a low-pass characteristic, which is an upper one

Cutoff frequency that is less than the cutoff frequency of the preferred than Low-pass filter executed loop filter (TP). The controller (RG) preferably regulates the current through the compensation coil (LC) in such a way that at the location of the paramagnetic center (NV1), which is preferably an NV center in diamond, there is an operating point through a corresponding average magnetic flux density B am Sets the location of the paramagnetic center (NV1) which is located in the optimal working range (see FIG. 27); sO current value of the receiver output signal (SO);

SO receiver output signal; sl current value of the reduced receiver output signal;

S1 reduced receiver output signal; s3 current value of the filter input signal (S3);

S3 filter input signal;

S3 ¹ additional filter input signal; s4 current value of the filter output signal (S4);

54 filter output signal;

S4 'additional filter output signal; s5 current value of the transmission signal (S5);

55 transmit signal; s5c current value of the complementary change component (S5c) of the

Transmission signal (S5);

S5c complementary alternating component of the transmission signal (S5); s5c 'current value of the complementary change component (S5c') of the

orthogonal reference signal (S5 '); S5c 'complementary alternating component of the orthogonal reference signal (S5');

S5g DC component value of the transmission signal (S5);

S5g 'DC component value of the orthogonal reference signal (S5'); s5w AC component value of the transmission signal (S5). This is the current value of the

AC component of the transmission signal (S5); s5w 'AC component value of the orthogonal reference signal (S5'). This is the current value of the alternating component of the orthogonal reference signal (S5 ');

S5w alternating component of the transmission signal (S5); S5W _A 'value of the amplitude of the alternating component (S5w) of the transmission signal (S5); S5W _a '· Value of the amplitude of the alternating component (S5w') of the additional

Transmission signal (S5 ');

S5W _A amplitude of the alternating component (S5w) of the transmission signal (S5);

S5 ¹ orthogonal reference signal also referred to as a further transmission signal (S5 ¹ ); s6 current value of the feedback signal (S6);

S6 feedback signal;

S6 ¹ additional feedback signal; s7 current value of the compensation transmission signal (S7); s7g instantaneous value of the constant direct component

Compensation transmission signal (S7); s7w current value of the alternating component of the compensation transmission signal

(S7); s7 ₀ real offset value based on the current value (s6) of the

The feedback signal (S6) is added by the second matching circuit (OF2);

57 compensation transmission signal; S7c complementary alternating component of the compensation transmission signal (S7);

S7g constant direct component of the compensation transmission signal s (S7); S7w alternating component of the compensation transmission signal (S7); s8 current value of the complex feedback signal (S8);

58 complex feedback signal; s9 current value of the operating point control signal (S9);

59 operating point control signal; slO current value of the hold circuit input signal (SlO);

S10 hold circuit input signal;

SlO 'additional hold circuit input signal; Sil further operating point control signal;

S&H hold circuit. The hold circuit is preferably used above all

Suppression of the chopper frequency of the alternating component (S5w) of the transmission signal (S5). It is not absolutely necessary for the basic functionality of the sensor systems shown here, but improves their signal-to-noise ratio significantly;

S&H ¹ additional hold circuit. The additional hold circuit preferably serves primarily to suppress the chopper frequency of the alternating component (S5w) of the transmission signal (S5). She is for the fundamental

The sensor systems shown here are not functional absolutely necessary, but improves their signal too

Noise ratio significant;

SBR web width;

SdT state of the art;

SH1 first horizontal shielding line. The first horizontal shielding line is preferably manufactured on the surface (OFL1) of the substrate (D) and is electrically insulated from it and mechanically directly connected to it. However, if necessary, contacts, for example the first horizontal contact (KH11) of the first quantum bit (QUB11), establish an electrical connection to the substrate (D) at predetermined points in order to be able to extract the photocurrent. The first horizontal shielding line is preferably made of one for radiation

_Pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB) made of transparent material, for example ITO. The first horizontal shielding line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

SH2 second horizontal shielding cable. The second horizontal shielding line is preferably produced on the surface (OFL1) of the substrate (D) and is electrically insulated from it and mechanically directly connected to it. If necessary, however, contacts, for example the first horizontal contact (KH22) of the second quantum bit (QUB12), establish an electrical connection to the substrate (D) at predetermined points in order to be able to extract the photocurrent. The second horizontal shielding line is preferably made from a material that is transparent to radiation of the pump radiation _wavelength (I _rigir ) of the pump radiation (LB), for example ITO. The second horizontal shielding line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it; SH3 third horizontal shielding line. The third horizontal shielding line is preferably produced on the surface (OFL1) of the substrate (D) and is electrically isolated from it and mechanically directly connected to it. However, if necessary, contacts, for example the first horizontal contact (KH33) of the third quantum bit (QUB13), establish an electrical connection to the substrate (D) at predetermined points in order to be able to extract the photocurrent. The third horizontal shielding line is preferably made from a material that is transparent to radiation of the pump radiation _wavelength (I _rigir ) of the pump radiation (LB), for example ITO. The third horizontal shielding line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

SH4 fourth horizontal shielding line. The fourth horizontal shielding line is preferably produced on the surface (OFL1) of the substrate (D) and is electrically isolated from it and mechanically directly connected to it. If necessary, however, contacts, for example the second horizontal contact (KFI44) of the third quantum bit (QUB13), establish an electrical connection to the substrate (D) at predetermined points in order to be able to extract the photocurrent. The fourth horizontal shielding line is preferably made from a material that is transparent to radiation of the pump radiation _wavelength (I _rigir ) of the pump radiation (LB), for example ITO. The fourth horizontal shielding line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

STR trigger signal. The signal generator (G) preferably generates at the end of a

Transmission signal period of the transmission signal (S5) a signaling via this trigger signal that causes the folding circuits (S&FI) to sample the output signal of the respective filter, for example the loop filter (TP), and thus obtain the current sample value. The respective holding circuit (S&H) then outputs this sample value as a

Filter output signal (S4) off until the next signaling occurs via the trigger signal;

SV1 first vertical shield cable. The first vertical shielding line is preferably produced on the surface (OFL1) of the substrate (D) and electrically insulated from it and mechanically directly connected to it. However, if necessary, contacts, for example the first vertical contact (KV11) of the first quantum bit (QUB11), establish an electrical connection to the substrate (D) at predetermined points in order to be able to extract the photocurrent. The first vertical shielding line is preferably made of one for radiation

_Pump radiation _wavelength (l _rigir ) of the pump radiation (LB) made of transparent material, for example ITO. The first vertical shielding line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

SV2 second vertical shielding cable. The second vertical shielding line is preferably manufactured on the surface (OFL1) of the substrate (D) and is electrically isolated from it and mechanically directly connected to it. If necessary, however, contacts, for example the second vertical contact (KV12) of the first quantum bit (QUB11), establish an electrical connection to the substrate (D) at predetermined points in order to be able to extract the photocurrent. The first vertical shielding line is preferably made of one for radiation

_Pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB) made of transparent material, for example ITO. The first vertical shielding line is preferably produced on the surface (OFL1) of the substrate (D) and is firmly connected to it;

Angle of reflection of the fluorescence radiation (FL);

Q, angle of incidence of the pump radiation (LB); t time;

Xi first time constant;

TI first times at which the transmission signal (S5) is active and the

Pump radiation source (PLI) emits pump radiation (LB); x ₂ second time constant;

T2 second times at which the transmission signal (S5) is not active and the

Pump radiation source (PLI) does not emit pump radiation (LB); t _d transition time of a paramagnetic center, for example one

NV center, coming from an excited state into an energetically lower intermediate state;

TFL test radiation that corresponds to the fluorescence radiation (FL) from the

Housing out;

T _{| C} pump radiation complementary time;

T _{| pmp} pump radiation _{pulse duration} ;

T, _pmpd pump radiation _{decay time of} the intensity (l _pmp ) of the pump radiation (LB);

T, _pmpr pump radiation _{rise time of} the intensity (l _pmp ) of the pump radiation (LB);

TLP test pump radiation;

TP loop filter. The loop filter is preferred as a low-pass filter and / or

Integrator running;

T _p transmission signal period of the alternating component (S5w) of the transmission signal (S5);

TP 'additional second loop filter. The additional loop filter is

preferably designed as a low-pass filter corresponding to the loop filter (TP);

Ts5c transmit signal complementary time. The definition of

Transmission signal complementary time can be seen in FIG. 91; Tsspmp transmission signal pulse duration. The definition of the transmission signal pulse duration can be seen in FIG. 91;

Ts5pmpd transmit signal fall time. The definition of the transmission signal fall time can be

Fig. 91 can be seen;

Tsspmpp transmit signal plateau time. The definition of the transmission signal plateau time can be

Fig. 91 can be seen;

Tsspi mpr transmit signal rise time. The definition of the transmit signal rise time can be

Fig. 91 can be seen;

V gain of the loop filter (TP);

VD1 first vertical driver stage for driving the first vertical line

(LV1) the first quantum bit to be controlled (QUB11) and the second quantum bit to be controlled (QUB12) and the third quantum bit to be controlled (QUB13);

Vext extraction voltage for extraction of the photocurrent;

VLOTP1 first further vertical plumb point;

VLOTP2 second further vertical plumb point;

VHNV1 first virtual horizontal quantum dot;

VHNV2 second virtual horizontal quantum dot;

VS1 first vertical receiver stage that is connected to the first vertical driver stage

(VD1) can form a unit, for example for reading out the first quantum bit to be controlled (QUB11) and possibly for reading out the second quantum bit to be controlled (QUB12) and possibly for reading out the third quantum bit to be controlled (QUB13) of the first column of quantum bits;

VS2 second vertical receiver stage that is connected to the second vertical

Driver stage (VD2) can form a unit, for example for Reading out the first quantum bit to be controlled (QUB21) and possibly for reading out the second quantum bit to be controlled (QUB22) and possibly for reading out the third quantum bit to be controlled (QUB23) of the second column of quantum bits; VS3 third vertical receiver stage, the one with the third vertical driver stage

(VD3) can form a unit, for example for reading out the first quantum bit to be controlled (QUB31) and possibly for reading out the second quantum bit to be controlled (QUB32) and possibly for reading out the third quantum bit to be controlled (QUB33) of the third column of the quantum bits;

VVNV1 first virtual vertical quantum dot;

VVNV2 second virtual vertical quantum dot;

WA circumferential wall of the housing;

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G. Kucsko, PC Maurer, NY Yao, M. Kubo, HJ Noh, PK Lo, H. Park, MD Lukin, "Nanometre-scale thermometry in a living cell", Nature 500, 54-58 (2013) (thermometry with NV centers) F. Dole, H. Fedder, MW Doherty, T. Nöbauer, F. Rempp, G. Balasubramanian, T. Wolf, F. Reinhard, LCL Flollenberg, F. Jeletzko, J. Wrachtup, “Electric-field sensing using single diamond spins ", Nat. Phs. 7, 459-463 (2011 (measurement of electric fields with NV centers)

A. Albrecht, A. Retzker, M. Plenio, "Nanodiamond interferometry meets quantum gravity" arXiv: 1403.6038vl [quant-ph] 24 Mar 2014 (measurement of gravitational fields with NV centers and consequently the possibility of measuring rotations and from Accelerations with NV centers and the possibility of navigation systems with NV centers and paramagnetic centers)

B. Kress, P. Meyrueis, "Digital Diffractive Optics" J. Wiley & Sons, London, 2000

B. Kress, P. Meyrueis, "Applied Digital Diffractive Optics", J. Wiley & Sons, London, 2009 B. E.A. Saleh, M.C. Teich "Fundamentals of Photonics" Wiley-VCH, Weinheim, 2nd edition, 2008

L. W. Snyman, J-L. Polleux, K. A. Ogudo, C. Viana, S. Wahle, "High Intensity 100 nW 5 GHz Silicon Avalanche LED utilizing carrier energy and momentum engineering", Conference Paper in

Proceedings of SPIE - The International Society for Optical Engineering February 2014, DOI:

10.1117 / 12.2038195 C. Beaufils, W. Redjem, E. Rousseau, V. Jacques, A. Yu. Kuznetsov, C. Raynaud, C. Voisin, A. Benali, T. Herzig, S. Pezzagna, J. Meijer, M. Abbarchi, G. Cassabois "Optical properties of an ensemble of G-centers in Silicon", Phys. Rev. B 97, 035303 01/09/2018

S. Castelletto, A. Boretti, "Silicon Carbide color centers for quantum applications," J. Phys. Photonics 2 022001, 2020 h J.R. Leger, D. Chen, G. Mowry, "Design and performance of diffractive optics for custom laser resonators", PPLIED OPTICS @ Vol. 34, No. 14 @ 10 May 1995, p. 2498-2509

J.Cai, F. Jelezko, M. B. Pleniol, "Signal transduction and conversion with color centers in diamond and piezo-elements" arXiv: 1404.6393v2 [quant-ph] 30 Oct 2017

Claims

Claims Main claims

1. Sensor system

with a sensor element

wherein the sensor element comprises a substrate (D) or can be the same as this substrate (D) and

wherein a volume of space can be selected in the substrate (D) and

wherein the substrate (D) in this volume of space has a group (NVC) paramagnetic

Centers (NV1) with at least two paramagnetic centers (NV1) and wherein the sensor system comprises first means (G, PLI) for exciting a fluorescent radiation (FL) of this group (NVC) of paramagnetic centers (NV1) and wherein the fluorescent radiation (FL) comprises a Fluorescence radiation wavelength (l ^) and

wherein the sensor system second means (G, Fl, PD, Ml, TP) for detection and for

Evaluation of the fluorescence radiation (FL) includes and

where the external dimensions of the chosen volume of space are twice

Do not exceed fluorescence radiation wavelength (lh) and the sensor system using the first and second means (G, PLI, Fl, PD, Ml, TP) as a function of the fluorescence radiation (FL) of this group (NVC)

paramagnetic centers (NV1) generates and / or holds a measured value, and wherein the fluorescence radiation (FL) depends on a physical parameter and and thus the measured value depends on the physical parameter and wherein the measured value is used as a measured value of this physical parameter, g e n z e i c h n e t d a d u r c h,

that the concentration of the paramagnetic centers (NV1) of this group (NVC) in the volume of space is on average greater than 100 ppm and / or 50 ppm and / or 20 ppm and / or 10 ppm based on the number of atoms of the substrate (D) per unit volume in this volume of space is.

2. Sensor system

with a sensor element

wherein the sensor element comprises a substrate (D) or can be the same as this substrate (D) and wherein a spatial volume can be selected in the substrate (D) and wherein the substrate (D) comprises a group (NVC) of paramagnetic centers (NV1) in this spatial volume and

wherein the sensor system first means (G, PLI) for exciting a photocurrent of the

Photoelectrons of this group (NVC) of paramagnetic centers (NV1) by means of a pump radiation (LB) with a pump radiation _wavelength (l _rGhr ) and the sensor system second means (G, Ml, TP) for detecting and evaluating the photocurrent of the photoelectrons of this group ( NVC) of paramagnetic centers (NV1) and

where the external dimensions of the chosen volume of space are twice

_Do not exceed the pump radiation _wavelength (l _rigir ) and

wherein the sensor system generates and / or holds ready a measured value by means of the first and second means (G, PLI, Ml, TP) as a function of the photocurrent, and wherein the photocurrent depends on a physical parameter and

and the measured value thus depends on the physical parameter and the measured value is used as the measured value of this physical parameter, g e k e n n n z e i h n e t d a d u r c h,

that the concentration of the paramagnetic centers (NV1) of this group (NVC) in the volume of space is on average 100 ppm and / or 50 ppm and / or 20 ppm and / or 10 ppm based on the number of atoms of the substrate (D) per unit volume in this volume of space.

Claims housing

3. Housing with a sensor system,

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises one or more paramagnetic centers (NV1) in the material of the sensor element and

wherein the sensor system comprises a pump radiation source (PLI) and

wherein the pump radiation source (PLI) is suitable and intended to emit pump radiation (LB) with a pump radiation _wavelength (l _rigir ) and wherein the pump radiation (LB) has the paramagnetic center or centers (NV1)

Irradiation of this or these paramagnetic centers (NV1) with this one Pump radiation (LB) for emitting fluorescence radiation (FL) with a

Fluorescence radiation wavelength (lh) caused and

where the intensity (l _fl ) of the fluorescence _radiation (FL) _depends on the intensity (l _pmp ) of the

Pump radiation (LB), with which the paramagnetic center or centers (NV1) are irradiated, and a value of an external physical parameter and / or a value of the magnetic flux density B at the location of the paramagnetic center or centers (NV1) and

wherein the sensor system comprises a radiation receiver (PD) and

the sensor system comprising evaluation aids (VI, Ml, TP, S&H, G, M2, OF2, OF1) where fluorescence radiation (FL) of the paramagnetic center or centers (NV1) denotes

Radiation receiver (PD) irradiated and

whereby the radiation receiver (PD) and evaluation tools (VI, Ml, TP, S&H, G, M2,

OF2, OF1) determine a measured value that depends on the intensity (l _fl ) of the

Fluorescence radiation (FL) depends and

wherein the sensor system provides the measured value and / or outputs it as a sensor output signal (out) and

wherein the housing comprises a cavity (CAV) and

wherein the sensor element with the paramagnetic center or centers (NV1) is located in the cavity (CAV) and

wherein the pump radiation source (PLI) is located in the cavity (CAV) and

wherein the radiation receiver (PD) is in the cavity (CAV) and

where the evaluation tools (VI, Ml, TP, S&H, G, M2, OF2, OF1) are in the cavity

located and

the material of the housing influencing the intensity (l _fl ) of the

Fluorescence radiation (FL) of the paramagnetic center or centers (NV1) through external physical parameters such as pressure and / or temperature and / or magnetic flux density B,

characterized by

that the housing comprises means (RE),

which are a housing part or a part of a housing part and the pump radiation (LB) on the paramagnetic center or centers

(NV1) and thus optically couple the pump radiation source (PLI) with the paramagnetic center or centers (NV1) and / or direct the fluorescence radiation (LB) of the paramagnetic center or centers (NV1) onto the radiation receiver (PD) and thus the Optically couple the radiation receiver (PLI) with the paramagnetic center or centers (NV1) and

that the means (RE)

around a reflective surface and / or

around a curved reflective surface and / or

around a photonic crystal and / or

around a beam splitter and / or

around an optical fiber and / or

around a grid and / or

around a metallized surface and / or

around a dielectric mirror and / or

is another optical functional element.

4. Housing according to claim 3

wherein the sensor system has a computer unit and wherein the computer unit is accommodated in the cavity (CAV) and wherein the computer unit controls the evaluation tools (VI, M l, TP, S&H, G, M2, OF2, OF1) and

wherein the computer unit has a first data bus interface and wherein the housing has exactly three connections

namely via a first connection and a second

Connection and has a third connection and

wherein the first connection is the connection of the supply voltage

(Vdd) is and

where the second connection is the connection of the reference potential (GND) and

wherein the third connection is a data bus line of the first data bus interface of the computer system.

5. Housing according to claim 3

wherein the sensor system has a computer unit and wherein the computer unit is accommodated in the cavity (CAV) and wherein the computer unit controls the evaluation tools (VI, M l, TP, S&H, G, M2, 0F2, 0F1) and

wherein the computer unit has a first data bus interface and wherein the computer unit has a second data bus interface and

wherein the housing is rectangular or square in plan view and the housing has exactly four connections

namely via a first connection and a second

Connection and has a third connection and a fourth connection and

wherein the first connection is the connection of the supply voltage (Vdd) and

where the second connection is the connection of the reference potential (GND) and

wherein the third connection is a data bus line of the first

The data bus interface of the computer system is and

the fourth connection being a data bus line of the second

The data bus interface of the computer system is and

wherein the third connection is arranged on a first side of the housing and

wherein the third connection is arranged on a second side of the housing which is opposite to the first side and

wherein the computer unit is provided and suitable to participate in a method for the automatic assignment of bus node addresses to the bus subscribers of a data bus with several bus subscribers and a bus master that assigns the bus node addresses.

Sensor system with a thickness amplifier and NV centers

6. sensor system,

wherein the sensor system comprises a sensor element and wherein the sensor element comprises one or more paramagnetic centers (NV1) and wherein the sensor system comprises a pump radiation source (PLI) and

wherein the pump radiation source (PLI) is suitable and intended to emit pump radiation (LB) with a pump radiation wavelength (l _{r [gir} ) and

where the pump radiation (LB) is the paramagnetic center (NV1) or the

paramagnetic centers (NV1) when this paramagnetic center (NV1) is irradiated with this pump radiation (LB) or when these paramagnetic centers (NV1) are irradiated with this pump radiation (LB) to emit fluorescence radiation (FL) with a fluorescence radiation wavelength (lh) and

where the intensity (l _fl ) of the fluorescence _radiation (FL) _depends on the intensity (l _pmp ) of the

Pump radiation (LB), with which the paramagnetic center (NV1) or the paramagnetic centers (NV1) are irradiated, and a value of an external physical parameter and / or a value of the magnetic flux density B at the location of the paramagnetic center (NV1) or depends on the location of the paramagnetic centers (NV1) and

wherein the sensor system comprises a radiation receiver (PD) and

the sensor system comprising evaluation aids (VI, Ml, TP, S&H, G, M2, OF2, OF1), where fluorescence radiation (FL) of the paramagnetic center (NV1) or the

paramagnetic centers (NV1) irradiate the radiation receiver (PD) and wherein the sensor system provides the measured value and / or outputs it as a sensor output signal (out) and

characterized by

that the sensor system has a reference noise source (PLK, NV2) and

that the reference noise source (PLK, NV2) irradiates the radiation receiver (PD) with radiation (KS, KFL) and

that the radiation receiver (PD) and evaluation tools (VI, M l, TP, S&H, G, M2, OF2, OF1) determine a measured value that is based on the total intensity of the superimposition of the fluorescence radiation (FL) and the radiation (KS, KFL) of the Reference noise source (PLK, NV2) depends and

that the intensity (l _{kf |} , l _ks ) of the radiation (KS, KFL) of the reference noise source (PLK, NV2) depends on this measured value so that a reduction in the intensity of the Irradiation of the radiation _receiver (PD) with fluorescent radiation (FL) _{results in} an increase in the intensity (l _kfl , 1 ^) of the irradiation with radiation (KS, KFL) from the reference noise source (PLK, NV2).

7. Sensor system according to claim 6,

characterized,

that the reference noise source (PLK, NV2) is essentially identical to the combination of pump radiation source (PLI) and sensor element with the paramagnetic center (NV1) or the paramagnetic centers (NV1)

8. Sensor system according to one or more of claims 6 to 7

wherein the radiation receiver (PD) essentially does not receive the pump radiation (LB)

receives and

wherein the radiation receiver (PD) receives the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1).

9. Sensor system according to one or more of claims 6 to 8

wherein the sensor system comprises a first filter (Fl),

essentially does not allow the pump radiation (LB) to pass and the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) essentially allows it to pass and

wherein the first filter (Fl) interacts with the radiation receiver (PD) so that the radiation receiver (PD1) the

Pump radiation (LB) essentially does not receive and

wherein the first filter (Fl) interacts with the radiation receiver (PD), so that the radiation receiver (PD) the

Receives fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1).

10. Sensor system according to one or more of claims 6 to 9

wherein the sensor element comprises a crystal with a crystal axis and

where the crystal has the paramagnetic center (NV1) or the paramagnetic centers

(NV1), wherein the paramagnetic center (NV1) or the paramagnetic centers (NV1) is aligned in a first direction with respect to one of the following relevant crystal axes, and

where the respective crystal axes are the crystal axes [100], [010], [001], [111] of the crystal and their equivalents (such as [-100], [-1, -1, -1] etc.) and

wherein the paramagnetic center (NV1) or the paramagnetic centers (NV1) emit fluorescence radiation (FL) when excited by the pump radiation (LB) and

wherein the fluorescence radiation (FL) as a function of a magnetic field with a

magnetic flux density B, the vector of which has a second direction, is modulated and

the second direction deviating from the first direction.

Claims method for manufacturing based on an open cavity

Housing with a proposed sensor system

11. A method for producing a sensor system comprising the steps

Providing (1) an open cavity housing with connections and with a cavity (CAV) and

Introducing (2) a pump radiation source (PLI) into the cavity (CAV) and

Introducing (3) an integrated circuit (IC), which may include a computer unit, with a radiation receiver (PD) in the cavity (CAV) and

Electrical connection (4) of integrated circuit (IC) and possibly radiation receiver (PD) and connections and pump radiation source (PLI) and

Introducing (5) a sensor element with one or more paramagnetic centers (NV1) into the cavity (CAV) and

Fastening (6) the sensor element by means of a fastening means (Ge) in the cavity (CAV),

characterized by the steps:

Manufacture (7) of funds (RE),

which are a housing part or a part of a housing part and which direct the pump radiation (LB) onto the paramagnetic center (NV1) and thus optically couple the pump radiation source (PLI) with the paramagnetic center or centers (NV1) and / or the fluorescent radiation (LB ) direct the paramagnetic center or centers (NV1) onto the radiation receiver (PD) and thus optically couple the radiation receiver (PLI) with the paramagnetic center (s) (NV1),

and

Close (8) the housing with a cover (DE),

wherein the pump radiation source (PLI) is provided and suitable for emitting pump radiation (LB) and

where the paramagnetic center (NV1) is in the material of the

When exposed to this pump radiation (LB), the sensor element emits fluorescent radiation (FL) and wherein the fastening means (Ge) essentially for the

Pump radiation (LB) and transparent to fluorescent radiation (FL);

Claims jewelry diamond

12. Jewelry diamond

wherein the jewelry diamond is a single crystal and

wherein the jewelry diamond is colored by a coloring process and

wherein the jewelry diamond appears red to a human observer when illuminated with white light and

wherein the jewelry diamond has a first absorption coefficient (oti) at a

Has irradiation with light with a wavelength of 437 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a second absorption coefficient (a ₂ ) at a

Having irradiation with light with a wavelength of 500 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a third absorption coefficient (a ₃ ) at a

Has irradiation with light with a wavelength of 570 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a fourth absorption coefficient (a ₄ ) at a

Has irradiation with light with a wavelength of 800 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a fifth absorption coefficient (a ₅ ) at a

Has irradiation with light with a wavelength between 200 nm and 400 nm in at least one possible direction of irradiation at room temperature, characterized in that

that the fifth absorption coefficient (a ₅ ) is greater than the first absorption coefficient (oti) and

that the first absorption coefficient (oti) is greater than the third absorption coefficient (a ₃ ) and

that the third absorption coefficient (a ₃ ) is greater than the second absorption coefficient

(a ₂ ) and that the second absorption coefficient (a ₂ ) is greater than the fourth absorption coefficient (a ₄ ) and

that the difference between the third absorption coefficient (a ₃ ) minus the second

Absorption coefficient (a ₂ ) is smaller than the difference from the second

Absorption coefficient (a ₂ ) minus the fourth absorption coefficient (a ₄ ).

13. Jewelry diamond

wherein the jewelry diamond is colored by a coloring process and

wherein the crystal of the jewelry diamond is made by a crystal growing process and

wherein the jewelry diamond appears red to a human observer when illuminated with white light and

wherein the jewelry diamond has a first absorption coefficient (oti) at a

Has irradiation with light with a wavelength of 437 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a second absorption coefficient (a ₂ ) at a

Having irradiation with light with a wavelength of 500 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a third absorption coefficient (a ₃ ) at a

Has irradiation with light with a wavelength of 570 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a fourth absorption coefficient (a ₄ ) at a

Has irradiation with light with a wavelength of 800 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a fifth absorption coefficient (a ₅ ) at a

Has irradiation with light with a wavelength between 200 nm and 400 nm in at least one possible direction of irradiation at room temperature, characterized in that

that the fifth absorption coefficient (a ₅ ) is greater than the first absorption coefficient (a ₄ ) and

that the first absorption coefficient (oti) is greater than the third absorption coefficient

(a ₃ ) and that the third absorption coefficient (a ₃ ) is greater than the second absorption coefficient (a ₂ ) and

that the second absorption coefficient (a ₂ ) is greater than the fourth absorption coefficient (a ₄ ) and

that the difference between the third absorption coefficient (a ₃ ) minus the second

Absorption coefficient (a ₂ ) is smaller than the difference from the second

Absorption coefficient (a ₂ ) minus the fourth absorption coefficient (a ₄ ).

14. Jewelry diamond according to one or more of claims 12 to 13

• where the jewelry diamond has one of the following cuts:

o Pointed stone cut

o Table stone cut

o Rose Cut

o Mazarin cut

o brilliant cut

o pear-shaped cut

o princess cut

o oval cut

o heart cut

o Marquise cut

o emerald cut

o Asscher cut

o Cushion cut

o Radiant cut

o Old European cut

o emerald cut

o Baguette cut

15. Jewelry diamond according to one or more of claims 12 to 14

with a quality grade of Sil or VS1 or better.

16. Jewelry diamond according to one or more of claims 12 to 15

the jewelry diamond when illuminated with white light in front of a white background gives the human observer a color corresponding to RAL 3020 and / or RAL3024 and / or RAL 3026 and / or another RAL color shows 3XXX, where XXX stands for a three-digit number between 000 and 999.

17. Jewelry diamond according to one or more of claims 12 to 16

wherein the jewelry diamond shows the red color "fancy-red" according to the GIA standard or the jewelry diamond shows the red color "fancy-deep" according to the GIA standard or the jewelry diamond shows the red color "fancy-vivid" according to the GIA standard or where the jewelry diamond shows the red color "fancy dark" according to the GIA standard or where the jewelry diamond shows the red color "fancy intense" according to the GIA standard or where the jewelry diamond shows the red color "fancy light" according to the GIA standard or where the jewelry diamond shows the red color "light" according to the GIA standard or

where the jewelry diamond is a red color corresponding to the pictures of the diamonds on page 13 of John M. King's "GIA Colored Diamonds, Color Reference Charts", Gemological Institute of America, 2006, ISBN-10: 0873110536, ISBN-13: 978- 0873110532 shows or

wherein the jewelry diamond shows the orange-pink color "fancy-red" according to the GIA standard or the jewelry diamond shows the orange-pink color "fancy-deep" according to the GIA standard or the jewelry diamond the orange-pink color "fancy-vivid" "shows according to the GIA standard or wherein the jewelry diamond shows the orange-pink color" fancy-dark "according to the GIA standard or wherein the jewelry diamond shows the orange-pink color" fancy-intense "according to the GIA standard or

where the jewelry diamond shows the orange-pink color "fancy light" according to the GIA standard or where the jewelry diamond shows the orange-pink color "light" according to the GIA standard or where the jewelry diamond has an orange-pink color according to the pictures of the diamonds on page Figure 12 of John M. King's GIA Colored Diamonds, Color Reference Charts, Gemological Institute of America, 2006, ISBN-10: 0873110536, ISBN-13: 978-0873110532 shows.

18. Jewelry diamond according to one or more of claims 12 to 17

whereby the jewelery diamond fluoresces with a color in the range of 637nm +/- 10nm when illuminated with white light against a white background.

19. Jewelry diamond according to one or more of claims 12 to 18 wherein the jewelry diamond has a fluorescence with a color temperature of less than 2000K and / or less than 1000K.

20. Jewelry diamond according to one or more of claims 12 to 19

wherein the jewelry diamond has a color temperature of less than 1000K when exposed to white light in at least one direction of transmission.

21. Jewelry diamond according to one or more of claims 12 to 20

• having a density of NV centers of more than 0.01ppm and / or of more than 10-3ppm and / or of more than 10-4ppm and / or of more than 10-5ppm and / or of more than 10- 6ppm based on the number of carbon atoms per unit volume.

22. Jewelry diamond according to one or more of claims 12 to 21

The density of the NV centers is less than 10 ppm and / or less than 2 ppm and / or less than 1 ppm and / or less than 0.5 ppm and / or less than 0.2 ppm and / or less than 0 , lppm and / or less than 0.05ppm and / or less than 0.02ppm and / or less than 0.01ppm and / or less than 0.005ppm and / or less than 0.002ppm and / or less than 0.001 ppm and / or less than 5 * 10 ⁴ ppm and / or less than 2 * 10 ⁴ ppm and / or less than 10 ⁵ ppm and / or less than 5 * 10 ⁵ ppm and / or less than 2 * 10 ⁵ ppm and / or less than 10 ⁶ ppm and / or less than 5 * 10 ⁶ ppm and / or less than 2 * 10 ⁶ ppm and / or less than 10 ⁷ ppm based on the number of Carbon atoms per unit volume.

23. Jewelry diamond according to one or more of claims 12 to 22

• wherein the jewelry diamond has traces of irradiation with particles, in particular with electrons and / or protons.

24. A method for setting one or more red jewelry diamonds, in particular according to one or more of claims 12 to 23:

• Provision of the diamond blank (s),

wherein the diamond blank (s) comprise nitrogen atoms in the form of pi centers and / or

wherein the diamond blank (s) have a yellow color and / or wherein the diamond blank or blanks nitrogen atoms together with

Include hydrogen;

• irradiating the diamond blank (s) with electrons,

the energy of the electrons being greater than 500keV and / or greater than IMeV and / or greater than 3MeV and / or greater than 4MeV and / or greater than 5MeV and / or greater than 6 MeV and / or greater than 7 MeV is and / or is greater than 8 MeV and / or is greater than 9 MeV and / or is greater than 10 MeV, an energy of IOMeV being preferred

wherein the radiation dose is preferably between 5 * 10 ¹⁷ cm ² and 2 * 10 ¹⁸ cm ² , but at least below 10 ¹⁹ cm ² and

the temperature of the diamond or diamonds during the

Irradiation at an irradiation temperature greater than 600 ° C. and / or greater than 700 ° C. and / or greater than 800 ° C. and less than 900 ° C. and / or less than 1000 ° C. and / or less than 1100 ° C. and / or less than 1200 ° C. is preferred is between 800 ° C and 900 ° C and

wherein the beam current of the electric current of these electrons is adjusted so that the irradiation time to achieve the above irradiation dose at least 0.05 days and / or at least 0.5 days and / or at least 1 day and / or at least 2 days and / or at least 4 Days and / or at least 8 days, but preferably 2 days.

25. The method of claim 24.

• where a diamond blank is a synthetic HPHT diamond or

• where a diamond blank is a synthetic CVD diamond.

26. The method according to one or more of the preceding claims 24 to 25,

• wherein a diamond blank has at least one ground surface before irradiation.

27. The method according to one or more of the preceding claims 24 to 26,

• the irradiation in a vacuum with a residual pressure of less than 10-4 mBar and / or less than 10 ⁵ mBar and / or less than 10 ^s mBar and / or less than 10 ⁷ mBar and / or less than 10 ⁸ mBar and / or from less than 10 ⁹ mBar and / or less than 10 ¹⁰ mBar and / or takes place, a residual pressure of less than 10 ^s mBar being preferred or

• where the irradiation takes place in a protective gas atmosphere, in particular in an agon atmosphere.

28. The method according to one or more of the preceding claims 24 to 27,

• where a diamond blank has one of the following cuts before blasting.

Pointed stone cut

Table stone cut

Rose cut finish

Mazarin cut

Brilliant cut

Pear cut

Princess cut

Oval cut

Heart cut

Marquise cut

Emerald cut

Asscher cut

Cushion cut

Radiant cut

Diamond old cut

Emerald cut

Baguette cut

29. The method according to one or more of the preceding claims 24 to 28,

• where a diamond blank has a size greater than 0.1 ct and / or greater than 0.2 ct and / or greater than 0.5 ct and / or greater than 1 ct and / or greater than 1.5 ct and / or greater than 2 ct.

30. The method according to one or more of the preceding claims 24 to 29,

wherein the diamond blank (s) are at a process chamber temperature during the irradiation in a temperature-controlled process chamber or wherein the diamond blank (s) are at a process chamber temperature during the irradiation in a temperature-controlled vessel or where the process chamber temperature is not more than 200 ° C and / or not more than 100 ° C and / or not more than 50 ° C and / or not more than 20 ° C and / or not more than 10 ° C from the irradiation temperature deviates.

31. The method according to one or more of the preceding claims 24 to 30,

• the diamond blank (s) being in a quartz vessel during the irradiation.

32. Device for carrying out a method according to one or more of the preceding

Claims 24 to 31 comprising

an electron accelerator that delivers electrons with an energy between 2MeV and IOMeV into a process chamber,

a vacuum system that is suitable and intended to evacuate the process chamber,

a heater

wherein the heating device is suitable and intended to heat the process chamber and / or a vessel within the process chamber to a process temperature and

a temperature sensor which is suitable and intended to detect the temperature of the process chamber and / or the temperature of the vessel and / or the temperature of one or more diamond blanks within the vessel or within the process chamber as a temperature measurement value and

a controller that is suitable and intended to turn the heating device into

To be controlled depending on the measured temperature value.

33. Use of a method according to one or more of claims 24 to 32 for

Production of one or more red jewelry diamonds, in particular a jewelry diamond according to one or more of claims 12 to 23.

34. Use of a method according to one or more of claims 24 to 32 and one

Device according to claim 32 for the production of one or more red ones

Decorative diamonds, in particular a decorative diamond according to one or more of Claims 12 to 23 Method for testing a housing

35. A method for testing a housing according to one or more of claims 3 to

5 with the steps

Irradiating the still open housing with pump radiation (LB) before closing it with a cover (DE);

Measurement (9) of the fluorescence radiation (FL) emitted by the paramagnetic center (NV1) of the sensor system in the cavity (CAV) of the housing;

Assess (10) the measured fluorescence radiation (FL) by comparing (10) the

Measured value of the fluorescence radiation (FL) with a threshold value.

36. A method for testing a housing according to one or more of claims 3 to

5 with the steps

Operating the pump radiation source (PLI) for pump radiation (LB);

Measurement (9) of the pump radiation (LB) emitted by the housing;

Assess (10) the measured pump radiation (LB) by comparing (10) the measured value of the pump radiation (LB) with a threshold value.

37. A method for testing a housing according to one or more of claims 3 to

5 with the steps

Operating the pump radiation source (PLI) for pump radiation (LB);

Measurement (9) of the fluorescence radiation (FL) emitted by the housing;

Assess (10) the measured fluorescence radiation (FL) by comparing (10) the

Measured value of the fluorescence radiation (FL) with a threshold value.

A method for operating a sensor system with a

Sensor element with a high density of paramagnetic centers and

Regulation via compensation path

38. Method of operating a sensor system

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises several paramagnetic centers (NV1),

comprehensive the steps

modulated transmission of a modulated pump radiation (LB) as a function of a modulated transmission signal (S5w); Generating a modulated fluorescence radiation (FL) by means of the paramagnetic center (NV1) which depends on the modulated pump radiation (LB) and at least one further physical parameter;

Receiving the modulated fluorescent radiation (FL) and generating one

Receiver output signal (SO);

Correlation of the receiver output signal (SO) with the modulated transmission signal (S5w) and formation of a sensor output signal (out), the sensor output signal (out) depending on the intensity of the correlation of the modulation of the fluorescence radiation (FL) with the modulated transmission signal (S5w);

Using the value of the sensor output signal (out) as a measured value for the at least one further physical parameter;

characterized by

that the density of the paramagnetic centers (NV1) in the sensor element is higher than 10 ⁶ ppm and / or higher than 0.01 ppm.

39. The method according to claim 38

where the correlation takes place with the steps

Subtract a feedback signal (S6) from the receiver output signal (SO) to the

reduced receiver output signal (Sl);

Multiplication of the reduced receiver output signal (Sl) or one of them

derived signal with the modulated transmission signal (S5w) to the filter input signal (S3);

Filtering the filter input signal (S3) with a loop filter (TP) to form the filter output signal (S4);

Formation of a complementary transmission signal (S5c) from the modulated transmission signal (S5w) and multiplication of the filter output signal (S4) by the complementary transmission signal (S5c) for the feedback signal (S6) or execution of a resultant combination of the filter output signal (S4) and the modulated transmission signal (S5);

Use of the filter output signal (S4) to form the sensor output signal (out), the sensor output signal (out) in the sense of this feature being able to be the same as the filter output signal (S4).

40. The method according to claim 38

where the correlation takes place with the steps Multiplication of the receiver output signal (SO) or a signal derived therefrom by the modulated transmission signal (S5w) to form the filter input signal (S3);

Filtering the filter input signal (S3) with a loop filter (TP) to form the filter output signal (S4);

Formation of a complementary transmission signal (S5c) from the modulated transmission signal (S5w) and multiplication of the filter output signal (S4) by the complementary transmission signal (S5c) for the feedback signal (S6) or execution of a resultant combination of the filter output signal (S4) and the modulated transmission signal (S5); Driving a reference noise source in the form of a compensation radiation source (PLK) with the feedback signal (S6);

Emitting a compensation radiation (KS) by the compensation radiation source (PLK) as a function of the feedback signal (S6) or a compensation transmission signal (S7) derived therefrom;

Radiation of compensation radiation (KS) into the radiation receiver (PD);

Superimposing reception of the fluorescence radiation (FL) and the compensation radiation in the radiation receiver (PD1);

Use of the filter output signal (S4) to form the sensor output signal (out), the sensor output signal (out) in the sense of this feature being able to be the same as the filter output signal (S4).

A method for operating a sensor system with a

Sensor element with a high density of paramagnetic centers and

Regulation via transmission path

41. Method of operating a sensor system

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises several paramagnetic centers (NV1),

comprehensive the steps

modulated transmission of a modulated compensation radiation (KS) as a function of a modulated compensation transmission signal (S7w);

Generating a modulated fluorescence radiation (FL) by means of the paramagnetic

Centers (NV1) which depend on a modulated pump radiation (LB) and at least one further physical parameter; Overlaying reception of the modulated fluorescence radiation (FL) and the

Compensation radiation (KS) and generating a receiver output signal (SO); Correlation of the receiver output signal (SO) with the modulated

Compensation transmission signal (S7w) and formation of a sensor output signal (out), using the value of the sensor output signal (out) as a measured value for the at least one further physical parameter;

characterized by

that the density of the paramagnetic centers (NV1) in the sensor element is higher than 10 ⁶ ppm and / or higher than 0.01 ppm.

42. The method according to claim 41

where the correlation takes place with the steps

Multiplication of the receiver output signal (SO) or a signal derived therefrom by the modulated compensation transmission signal (S7w) to form the filter input signal

(53);

Filtering the filter input signal (S3) with a loop filter (TP) to the filter output signal

(54);

Formation of a complementary compensation transmission signal (S7c) from the modulated

Compensation transmission signal (S7w) and multiplication of the filter output signal (S4) with the complementary compensation transmission signal (S7c) for the complex feedback signal (S8) or execution of a resultant combination of filter output signal (S4) and modulated transmission signal (S5) to form the complex feedback signal (S8)

Driving a pump radiation source (PLI) with the complex feedback signal (S8) or a transmission signal (S5) derived therefrom;

Emission of a pump radiation (LB) by the radiation source (PLI) as a function of the complex feedback signal (S8) or a transmission signal derived therefrom

(55);

Claims Method for operating a sensor system measuring the afterglow of the paramagnetic centers

43. Method of operating a sensor system

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises several paramagnetic centers (NV1), comprehensive the steps

A modulated transmission of a modulated pump radiation (LB) is modulated by means of a modulated transmission signal (S5w);

Generating a modulated fluorescence radiation (FL) by means of the paramagnetic

Centers (NV1) which depend on the modulated pump radiation (LB) and at least one further physical parameter;

Receiving the modulated fluorescent radiation (FL) and generating one

Receiver output signal (SO);

characterized by the

Determining a value of the intensity (l _{f |} ) of the modulated fluorescence radiation (FL) of the paramagnetic centers (NV1) at times when the modulated emission of the modulated pump radiation (LB) does not take place;

Outputting or keeping this value ready as a measure for the at least one other

physical parameters

Use this value as a measure for the at least one further physical

Parameter.

Sensor system that evaluates the fluorescence phase shift time (ÄTFL)

44. Sensor system

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises several paramagnetic centers (NV1),

wherein the sensor system comprises a pump radiation source (PLI) for pump radiation (LB) and

where the intensity (l _pmp ) of the pump radiation (LB) is modulated and

wherein the pump radiation (LB) the paramagnetic centers (NV1) for the release of

Fluorescence radiation (FL) causes and

wherein the fluorescence radiation (FL) of at least one physical parameter

is dependent and

characterized by

that the sensor system comprises means to set a fluorescence phase shift time (ATFL) between a modulation of the pump radiation (LB) and the therewith to detect corresponding modulation of the fluorescence radiation (FL) in the form of one or more measured values and

that the sensor system outputs or keeps this one measured value or the multiple measured values as measured value or measured values for the at least one physical parameter.

Ammeter sensor system claims

45. Sensor system

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises one or more paramagnetic centers (NV1) and wherein the sensor system has a housing and

wherein the sensor system comprises a pump radiation source (PLI) and

wherein the pump radiation source (PLI) is suitable and intended to emit pump radiation (LB) with a pump radiation wavelength (l _{r [gir} ) and wherein the pump radiation (LB) is the paramagnetic center (NV1) or the

paramagnetic centers (NV1) when this paramagnetic center (NV1) or the paramagnetic centers (NV1) are irradiated with this

Pump radiation (LB) for emitting fluorescence radiation (FL) with a

Fluorescence radiation wavelength (lh) caused and

wherein the housing comprises at least one conduit

wherein the line is traversed by an electric current and

wherein this electric current generates a magnetic flux density B and

where this magnetic flux density B is the fluorescence radiation (FL) of the or the

paramagnetic centers (NV1) influenced and

wherein the sensor system determines a value for the fluorescence radiation (FL) and wherein the sensor system provides and / or outputs this value for the fluorescence radiation (FL) in digital and / or analog form as a measured value for the electrical current in the line.

46. Sensor system according to Claim 45

The concentration of the NV centers in the diamond is greater than 0.01 ppm. Sensor system with tilted relative to the magnetic field

Crystal axis

47.Sensor system,

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises one or more paramagnetic centers (NV1) and wherein the sensor system has a pump radiation source (PLI) and

wherein the sensor system comprises a radiation receiver (PD) and

wherein the pump radiation source (PLI) emits pump radiation (LB) and

wherein the pump radiation (LB) has a pump radiation _wavelength (l _rGhr ) and wherein the pump radiation (LB) has the paramagnetic center (NV1) or the

paramagnetic centers (NV1) when this paramagnetic center (NV1) or the paramagnetic centers (NV1) are irradiated with this

Pump radiation (LB) for emitting fluorescence radiation (FL) with a

Fluorescence radiation wavelength (Ä _fl ) caused and

wherein the fluorescence radiation (LB) has a fluorescence radiation wavelength (Ä _fl ) and

wherein the radiation receiver (PD) for the fluorescence radiation wavelength (Ä _{f |} )

is sensitive and

wherein the fluorescence radiation (FL) irradiates the radiation receiver (PD) and wherein the sensor element and / or the quantum technological device element has a crystal with a crystal axis and

wherein the crystal has the paramagnetic center (NV1) or the paramagnetic centers (NV1),

wherein the paramagnetic center (NV1) or the paramagnetic centers (NV1) are aligned in a first direction with respect to one of the following relevant crystal axes, and

where the respective crystal axes are the crystal axes [100], [010], [001], [111] of the crystal and their equivalents (such as [-100], [-1, -1, -1] etc.) and

wherein the fluorescence radiation (FL) as a function of a magnetic field with a

magnetic flux density B having a vector in a second direction is modulated and

characterized by that the second direction deviates from the first direction.

48. Sensor system according to claim 47,

wherein the crystal is a diamond crystal with an NV center as

paramagnetic center acts and

wherein the second direction deviates from the first direction in such a way that the GSLAC extremum with a total magnetic flux density at the location of the paramagnetic center at 102.4mT by not more than 2% and / or not more than 1% and / or not more deviates more than 0.5% from the standardized 1-value of the intensity (In) of the fluorescence radiation (FL).

49. Sensor system according to claim 47 and / or 48,

wherein the sensor element has a plurality of diamonds with different crystal orientations.

Sensor system with adjustment and readjustment of the

magnetic working point

50. sensor system,

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises one or more paramagnetic centers (NV1) and wherein the sensor system has a pump radiation source (PLI) and

wherein the sensor system comprises a radiation receiver (PD) and

wherein the pump radiation source (PLI) emits pump radiation (LB) and

wherein the pump radiation (LB) has a pump radiation _wavelength (l _rGhr ) and wherein the pump radiation (LB) has the paramagnetic center (NV1) or the

paramagnetic centers (NV1) when this paramagnetic center (NV1) or the paramagnetic centers (NV1) are irradiated with this

Pump radiation (LB) for emitting fluorescence radiation (FL) with a

Fluorescence radiation wavelength (l ^) as a function of the magnetic flux B at the location of this paramagnetic center (NV1) or the paramagnetic centers (NV1) and

wherein the radiation _receiver (PD) for the fluorescence radiation wavelength (l _ίΐ ) q

is sensitive and

wherein the fluorescence radiation (FL) irradiates the radiation receiver (PD) and wherein the radiation receiver (PD) generates a receiver output signal (SO) as a function of the fluorescence radiation (FL) and

wherein the sensor system comprises means, in particular a controller (RG) and / or in particular a compensation coil (LC) and / or a permanent magnet, to the change in the intensity (l _fl ) of the fluorescent rays (FL) with a change in the magnetic flux density B am To maximize location of the paramagnetic center or the paramagnetic centers (NV1) related to the respective application or

to set a magnetic operating point in the form of a magnetic bias flux density B ₀ at the location of the paramagnetic center or the paramagnetic centers (NV1).

Use of the sensor system for position determination

51. Use of a sensor system according to one of the preceding claims 6 to 10 and / or

42 to 47 to determine the position of an object,

wherein the object generates and / or modifies and / or modulates and / or modulates a magnetic field in the form of a magnetic flux density B

this modulation being detected by the sensor system and

wherein the sensor system has at least one value, for example in the form of a

Sensor output signal (out), generated or provided, which depends on the value of the magnetic flux B at the location of the paramagnetic center (NV1) or the paramagnetic centers (NV1), which is generated and / or modified and / or modulated by the object.

52. Use of a sensor system according to claim 51

the generation and / or modification and / or modulation being periodic.

53. Use according to claim 52

the periodicity being due to an electrical and / or mechanical oscillation and / or a mechanical movement along a closed path.

Claims device with several coupled paramagnetic

Centers

54. device, wherein the device can in particular be a sensor system according to one of the preceding claims 6 to 10 and / or 44 to 49 and

wherein the device comprises several paramagnetic centers (NV1) and

wherein the device comprises a pump radiation source (PLI) and

wherein the device comprises a radiation receiver (PD) and

wherein the pump radiation source (PLI) emits pump radiation (LB) and

wherein the pump radiation (LB) has a pump radiation _wavelength (l _rGhr ) and wherein the pump radiation (LB) has the paramagnetic center (NV1) or the

paramagnetic centers (NV1) when the paramagnetic centers (NV1) are irradiated with this pump radiation (LB) to emit fluorescence radiation (FL) with a fluorescence radiation wavelength (lh) and

where the radiation receiver (PD) for the fluorescence radiation wavelength (lh)

is sensitive and

wherein the fluorescence radiation (FL) irradiates the radiation receiver (PD) and wherein the radiation receiver (PD) generates a receiver output signal (SO) as a function of the fluorescence radiation (FL) and

wherein at least two paramagnetic centers (NV1) of the paramagnetic centers (NV1) are coupled to one another and

wherein the device is operated at a temperature> -40 ° C and / or> -0 ° C and / or> 20 ° C.

55. Method according to one or more of the preceding method claims

Comprehensive the step of coupling at least two paramagnetic centers (NV1).

Claims Process for manufacturing by casting with globe-top compound

56. Method for producing a sensor system and / or a quantum technological system

comprehensive the steps

Providing (14) a leadframe with connections and

Mount (15) a pump radiation source (PLI) on the leadframe and

Mounting (16) an integrated circuit (IC) with a radiation receiver (PD1) on the leadframe and

Electrical connection (17) of the integrated circuit (IC) and the radiation receiver (PD1) and the pump radiation source (PLI) and the connections and Mounting (18) a sensor element with a paramagnetic center (NV1) or with several paramagnetic centers (NV1) and

Attaching (19) the sensor element and / or quantum technology

Device element by means of a fastening means (Ge) and covering (20) of the device part with a casting aid (GLT) and

Potting (21) the part device with a potting compound,

wherein Q pump radiation source (PLI) is provided to emit pump radiation (LB) with a pump radiation _wavelength (l _rGhr ) and

the paramagnetic center (NV1) or the paramagnetic centers (NV1) remitting fluorescence radiation (FL) with a fluorescence radiation wavelength ^ when irradiated with this pump radiation (LB)

characterized,

that the casting aid (GLT) is essentially for radiation of the

_Pump radiation _wavelength (l _rGTΐr ) of the pump radiation (LB) and for radiation of the fluorescence radiation wavelength (lh) of the fluorescence radiation (FL) is transparent;

Sensor system with coil arrangement

57. sensor system,

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises one or more paramagnetic centers (NV1) and wherein the sensor system has a pump radiation source (PLI) and

wherein the sensor system comprises a radiation receiver (PD) and

wherein the pump radiation source (PLI) emits pump radiation (LB) and

wherein the pump radiation (LB) has a pump radiation _wavelength (l _rGhr ) and wherein the pump radiation (LB) has the paramagnetic center (NV1) or the

paramagnetic centers (NV1) when this paramagnetic center (NV1) or the paramagnetic centers (NV1) are irradiated with this

Pump radiation (LB) for emitting fluorescence radiation (FL) with a

Fluorescence radiation wavelength (lh) as a function of the magnetic flux B at the location of this paramagnetic center (NV1) or the paramagnetic centers (NV1) and wherein the radiation receiver (PD) is sensitive to the fluorescence radiation wavelength (Ä _fl ) and

wherein the fluorescence radiation (FL) irradiates the radiation receiver (PD) and wherein the radiation receiver (PD) generates a receiver output signal (SO) as a function of the fluorescence radiation (FL) and

wherein the sensor system comprises means, in particular a coil arrangement (LI, 12, 13, L4, L5) which is suitable for a change in the magnetic flux density B in amplitude and direction at the location of the paramagnetic center (NV1) or at the location of the paramagnetic centers (NV1) to cause this change in magnetic flux density B in amplitude and direction at the location of the paramagnetic center (NV1) or the paramagnetic centers (NV1) the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic Centers (NV1) influenced.

Integrated circuit with flat coil

58. Integrated circuit (IC)

with a first coil (LI) and

with at least one further pair of coils ([L2, L5], [L3, L6], [L4, L7]) and / or one

further coil (L2, L3, L4, L5, L6, L7) and

characterized,

that the first coil (LI) and the at least one further coil pair ([L2, L5], [L3, L6], [L4, L7]) and / or the further coil (L2, L3, L4, L5, L6, L7 ) are suitable and intended to influence the generation of fluorescence radiation (FL) of a paramagnetic center (NV1) or several paramagnetic centers (NV1).

Claims evaluation circuit with hold circuit

59. Circuit, particularly integrated circuit (IC), for use with a paramagnetic

Center (NV1) or several paramagnetic centers (NV1)

with a driver for operating a pump radiation source (PLI),

wherein the pump radiation source (PLI) emits pump radiation (LB) at least temporarily; with a radiation receiver (PD1),

for the selective detection of fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1), wherein the radiation receiver (PD1) is provided to essentially not detect the pump radiation (LB) in terms of said selectivity, and with an evaluation circuit (M l, TP, M2, S&H, G)

for generating a sensor output signal (out),

which depends on the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) and

the value of which at least temporarily reflects the measured value to be detected, this value of the sensor output signal (out) being dependent on the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) and possibly other physical parameters,

marked by

a hold circuit (S&H),

wherein the hold circuit has an input and an output and wherein the hold circuit (S&H) in the signal path between the

Receiver output signal (SO) of the radiation receiver (PD1) and the

Sensor output signal (out) is inserted and

wherein the holding circuit (S&H) holds its output signal at its output essentially constant in first time periods and

wherein the holding circuit (S&H) changes its output signal at its output as a function of the signal at its input in second time periods which are different from the first time periods.

Claims method with hold circuit and correlation with transmit signal

60. Method of operating a sensor system

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises one or more paramagnetic centers (NV1) and comprising the steps

A modulated transmission of a modulated pump radiation (LB) is modulated by means of a modulated transmission signal (S5w);

Generating a modulated fluorescence radiation (FL) by means of the paramagnetic

Center (NV1) or the paramagnetic centers (NV1) which depends on the modulated pump radiation (LB); Receiving the modulated fluorescence radiation (FL) and generating a modulated receiver output signal (SO) as a function of the modulated

Fluorescent radiation (FL);

Correlation of the modulated receiver output signal (SO) with the modulated one

Transmission signal (S5w) and formation of a filter output signal (S4), the filter output signal (S4) depending on the intensity of the correlation of the modulation of the fluorescence radiation (FL) with the modulated transmission signal (S5w);

characterized by the steps:

Sampling of the filter output signal (S4), in particular by means of a hold circuit (S&H), while determining a sequence of sampling values and

Use of the sequence of the sampled values as the sensor output signal (out);

61. The method according to claim 60

where the correlation takes place with the steps

Formation of a feedback signal (S6) depending on the sensor output signal (out) and the modulated transmission signal (S5w),

wherein the feedback signal (S6) has a signal component which is complementarily modulated (S5c) to a signal component of the modulated transmission signal (S5w);

Subtract the feedback signal (S6) from the receiver output signal (SO) to the

reduced receiver output signal (Sl);

Multiplication of the reduced receiver output signal (Sl) with the modulated

Transmission signal (S5w) to the modulated filter input signal (S3);

Filtering the modulated filter input signal (S3) with a loop filter (TP) for

Filter output signal (S4).

62. The method according to claim 61,

wherein the formation of a feedback signal (S6) as a function of the

Sensor output signal (out) and the modulated transmission signal (S5w) by multiplying the sensor output signal (out) with the modulated transmission signal (S5w) for the feedback signal (S6), possibly combined with the multiplication of a suitable sign and possibly combined with the addition of a suitable offset .

63. The method of claim 61 and / or 62 where the correlation takes place with the steps

Multiplication of the receiver output signal (SO) by the modulated transmission signal (S5w) to form the filter input signal (S3);

Filtering and / or integrating the filter input signal (S3) with a loop filter (TP) to form the filter output signal (S4), the filter output signal possibly being multiplied by a factor of -1;

Sampling of the filter output signal (S4), in particular by means of a folded circuit (S&FI), with determination of a sequence of sampling values and

Use of the sequence of the sampled values as the sensor output signal (out);

Multiplication of the sensor output signal (out) with the modulated transmission signal (S5w) to form the feedback signal (S6);

Driving a compensation radiation source (PLK) with the feedback signal (S6) or a compensation transmission signal (S7) derived therefrom;

Emitting a compensation radiation (KS) by the compensation radiation source (PLK) as a function of the feedback signal (S6) or a compensation transmission signal (S7) derived therefrom;

Radiation of compensation radiation (KS) into the radiation receiver (PD1);

Overlaying, in particular adding overlaying, receiving the

Fluorescence radiation (FL) and the compensation radiation (KS) in the radiation receiver (PD1) and formation of the receiver output signal (SO) as a function of this superposition.

Claims method with hold circuit and correlation with

Compensation transmission signal

64. Procedure for operating a

wherein the sensor system and / or quantum technology system has a paramagnetic center (NV1) in the material of a sensor element and / or

quantum technological device element which is part of the sensor system and / or quantum technological system,

comprehensive the steps

By means of a modulated compensation transmission signal (S7w), modulated transmission of a modulated compensation radiation (KS), in particular by a compensation radiation source (PLK); Generating a modulated fluorescence radiation (FL) by means of a paramagnetic

Center (NV1) or by means of several paramagnetic centers (NV1) in a material of a sensor element, which depends on a modulated pump radiation (LB) and possibly other parameters, in particular the magnetic flux density B;

Overlaying, in particular adding overlaying, receiving of the modulated

Fluorescence radiation (FL) and the compensation radiation (KS) and generating a received signal (SO) as a function of this superposition;

Correlation of the received signal (SO) with the modulated compensation transmission signal (S7w) and formation of a filter output signal (S4);

Generating a modulated with the modulated compensation transmission signal (S7w)

complex feedback signal (S8) with the aid of a sensor output signal (out).

Forming the transmission signal (S5) from the transmission pre-signal (S8), in particular by

Offset addition and / or power gain;

Controlling a pump radiation source (PLI) with the transmission signal (S5);

Sending a pump radiation (LB) through the pump radiation source (PL1) as a function of the transmission signal (S5);

characterized by the steps:

Sampling of the filter output signal (S4), in particular by means of a hold circuit (S&H), while determining a sequence of sampling values and

Use of the sequence of sampled values as the sensor output signal (out).

65. The method according to claim 64

where the correlation takes place with the steps

Multiplication of the receiver output signal (SO) with the modulated

Compensation transmission signal (S7w) for the filter input signal (S3);

Filtering and / or integrating the filter input signal (S3) with a loop filter (TP) to form the filter output signal (S4), it being possible in particular for the filter output signal to be multiplied by a factor of -1.

66. The method according to claim 64 and / or 65

wherein the formation of the complex feedback signal (S8) by multiplying the

Filter output signal (S4) with the modulated compensation transmission signal (S7w) or with a compensation transmission signal (S7c) complementary to the modulated compensation transmission signal (S7w) for the transmission pre-signal (S8).

Claims method with hold circuit

67. Method of operating a sensor system

wherein the sensor system has one paramagnetic center (NV1) or more

includes paramagnetic centers (NV1),

comprehensive the steps

A modulated transmission of a modulated pump radiation (LB) is modulated by means of a modulated transmission signal (S5w);

Generating a modulated fluorescence radiation (FL) by means of the paramagnetic

Center (NV1) or by means of the paramagnetic centers (NV1), which depends on the modulated pump radiation (LB) and at least one further physical parameter;

Receiving the modulated fluorescence radiation (FL) and generating a received signal, receiver output signal (SO);

characterized by the steps:

Determining the intensity (l _{f |} ) of the modulated fluorescence radiation (FL) of the

paramagnetic center (NV1) or the paramagnetic centers (NV1) in the form of a filter output signal (S4) at times when the modulated emission of the modulated pump radiation (LB) in particular by the pump radiation source (PLI) for pump radiation (LB) does not take place;

Sampling the filter output signal (S4), in particular by means of a hold circuit (S&H), while determining a sequence of sampled values;

Use of the sequence of sampled values as the sensor output signal (out).

Sensor system with determination of the

Fluorescence phase shift time and hold circuit

68. Sensor system

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises one or more paramagnetic centers (NV1) and wherein the sensor system has a pump radiation source (PLI) and wherein the pump radiation (LB) initially causes the paramagnetic center (NV1) or the paramagnetic centers (NV1) to emit fluorescent radiation (FL) and

wherein the sensor system comprises means (PD1, Al, Ml, TP, S&H, M2, A2, G, M l ', TP', S&FT, M2 ') which at second times, which are different from the first times,

the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) detect in the form of an additional filter output signal (S4 ') and

characterized by

that means (PD1, Al, Ml, TP, S&H, M2, A2, G, Ml ', TP', S&H ', M2') to the second times

sample the additional filter output signal (S4 ') in the form of an additional sequence of additional sample values and

this additional sequence of additional sampled values as an additional sensor output signal (out ¹ ) which depends on the fluorescence radiation (FL) of the paramagnetic center (NV1) at these second times and

that the sensor system comprises further means (S&H ') to in the signal path between the

Received signal (SO) and the additional sensor output signal (out ') sample the respective signal at the point of insertion of these further means (S&H') in order to obtain the additional sequence of additional samples.

Claims for the production of diamonds with a high concentration of NV centers

69. Process for the production of diamonds or a diamond with a high concentration of NV centers

Provision of the diamond (s),

wherein the diamond or diamonds when provided comprise nitrogen atoms in the form of PI centers and / or

wherein the diamond or diamonds have a yellow color when provided and / or the diamond or diamonds in providing the GIA colors

"fancy yellow" or "fancy deep yellow" or "fancy light yellow" or "fancy intense yellow"

wherein the diamond or diamonds when provided comprise nitrogen atoms together with hydrogen;

Irradiating the diamond (s) with particles,

wherein the energy of the particles is greater than 500keV and / or greater than IMeV and / or is greater than 3MeV and / or is greater than 4MeV and / or is greater than 5MeV and / or is greater than 6 MeV and / or greater than 7 MeV is and / or is greater than 9 MeV and / or is greater than 9 MeV and / or is greater than 10 MeV, an energy of IOMeV being preferred, and

wherein the radiation dose is preferably between 5 * 10 ¹⁷ cm ² and 2 * 10 ¹⁸ cm ² , but at least below 10 ¹⁹ cm ² and

the temperature of the diamond or diamonds during the

Irradiation at a temperature greater than 600 ° C. and / or greater than 700 ° C. and / or greater than 800 ° C. and less than 900 ° C. and / or less than 1000 ° C. and / or less than 1100 ° C. and / or less than 1200 ° C., particularly but is preferably between 800 ° C and 900 ° C and

wherein the beam current of the electric current of these particles is adjusted so that the irradiation time to achieve the above irradiation dose at least 0.05 days and / or at least 0.5 days and / or at least 1 day and / or at least 2 days and / or at least 4 Days and / or at least 8 days, but preferably 2 days.

70. The method according to claim 69

wherein the particles are electrons and / or, less preferably, protons.

71. The method according to claim 69 or 70

wherein the temperature of the diamonds is recorded as a temperature value during the irradiation and wherein a heating energy is pulsed or PWM-modulated or otherwise pulse-modulated by means of heating energy pulses and

wherein the temperature of the diamonds takes place by controlling the heating energy pulse height and / or the duty factor and / or the temporal heating energy pulse interval and / or the heating energy pulse width and

this control being carried out as a function of the temperature value.

72. The method according to one or more of claims 69 to 71. wherein a diamond is a synthetic HPHT diamond or

wherein a diamond is a synthetic CVD diamond.

73. The method according to one or more of claims 69 to 72, wherein a diamond has at least one ground surface prior to irradiation.

74. The method according to one or more of claims 69 to 73, wherein the irradiation takes place and / or in a vacuum with a residual pressure of less than 10 ^s mbar

the irradiation taking place in a protective gas atmosphere, in particular in an agon atmosphere.

75. The method according to one or more of the preceding claims 69 to 74, wherein a diamond has one of the following cuts before irradiation:

Pointed stone cut,

Table stone cut,

Rose cut,

Mazarin cut,

Brilliant cut,

Pear cut,

Princess cut,

Oval cut,

Heart cut,

Marquise cut,

Emerald cut,

Asscher cut, Cushion cut,

Radiant cut,

Old European cut,

Emerald cut,

Baguette cut,

76. The method according to one or more of claims 69 to 75,

wherein the diamonds are smaller or on average smaller than 1mm and / or smaller than 0.5mm and / or smaller than 0.2mm and / or smaller than 0.1mm and / or smaller than 50pm and / or smaller than 20pm and / or smaller than 10pm and / or less than 5pm and / or less than 2pm and / or less than 1pm and / or less than 0.5pm and / or less than 0.2pm and / or less than 0. miti.

77 The method according to one or more of claims 69 to 76,

the diamond or diamonds being in a quartz vessel during the irradiation.

Patent claims Synthetic HD-NV diamond with high NV center density

78.Synthetic diamond, also called HD-NV diamond in this document,

with an at least local NV center density of more than 100 ppm and / or more than

50ppm and / or more than 20ppm and / or more than 10ppm u based on the number of carbon atoms per unit volume,

the term "local" here denotes a reference volume that is greater than half the pump radiation _wavelength (l _rGTΐr ) to the third power.

79. Diamond according to claim 78, the diamond having been produced using a method according to one or more of claims 69 to 77.

80. Diamond according to one or more of claims 78 to 79, wherein the diamond is isotopically pure and

where isotopically pure means that more than 99.5% of the atoms of the diamond are one

Carbon isotope can be assigned.

Claims sensor system with HD-NV diamond

81 Sensor system according to one or more of the above claims relating to a sensor system, wherein the sensor element is a diamond according to one or more of claims 78 to 80 and / or wherein the sensor system comprises a diamond according to one or more of claims 78 to 80.

Patent claims sensor system with position determination etc.

82 Sensor system according to one or more of the above claims relating to a sensor system for determining

the position of the object and / or

a variable derived from the position, in particular the

Speed and / or acceleration and / or the oscillation of an object and / or

the magnetization of the object, the magnetization of the object being caused by a current flow in the object or by ferromagnetic properties of the object or parts of the object, and / or

a variable derived from the magnetization of the object and / or a magnetization direction of the object relative to the sensor system and / or

a variable derived from the direction of magnetization of the object, the object generating and / or modifying and / or modulating a magnetic field and

this generation and / or modification and / or modulation by the

Sensor system is detected and

wherein the sensor system generates or at least one sensor output signal (out)

provides, the value of which depends on the value of the magnetic flux B at the location of the paramagnetic center (NV1) and / or at the location of the paramagnetic centers (NV1), which is generated and / or modified and / or modulated by the object.

Claims Integrated circuit with HD-NV diamond

83. Integrated circuit (IC)

with a first coil (LI) and

with at least one further pair of coils ([L2, L5], [L3, L6], [L4, L7j) and / or one

further coil (L2, L3, L4, L5, L6, L7) and wherein the first coil (LI) and the at least one further pair of coils ([L2, L5], [L3, L6],

[L4, L7]) and / or the further coil (L2, L3, L4, L5, L6, L7) are suitable and provided for the generation of fluorescence radiation (FL) of a paramagnetic center (NV1) or several paramagnetic centers (NV1) to influence,

where it is the paramagnetic center (NV1) or the paramagnetic

Centers (NV1) is one NV center or several NV centers in a diamond according to one or more of Claims 78 to 80.

Claims Use of HD-NV diamonds for sensor systems

84. Method of operating a sensor system

wherein the sensor system has one paramagnetic center (NV1) or more

includes paramagnetic centers (NV1) and

comprehensive the steps

Emitting a pump radiation (LB);

Generating a fluorescence radiation (FL) by means of the paramagnetic center (NV1) or by means of the paramagnetic centers (NV1), which depends on the modulated pump radiation (LB) and a further physical parameter;

Receiving the fluorescence radiation (FL) and generating a sensor output signal (out), the sensor output signal (out) depending on the fluorescence radiation (FL), the value of the sensor output signal (out) being a measured value for the value of the

represents further physical parameters and / or the intensity (l _{f |} ) of the fluorescence radiation (FL)

characterized by

that the paramagnetic center (NV1) or the paramagnetic centers (NV1) is an NV center or several NV centers in a diamond according to one or more of claims 78 to 80.

Claims device with alignment and fluorescence measurement

85. Having a quantum technological device

a sensor element,

wherein the sensor element comprises a crystal with a crystal axis and

wherein the crystal has a paramagnetic center (NV1) in the crystal, wherein the quantum technological device has the possibility or means of exciting the paramagnetic center (NV1) by means of pump radiation (LB) and wherein the paramagnetic center (NV1) is oriented in a first direction with respect to one of the following relevant crystal axes and

where the relevant crystal axes are the crystal axes [100], [010], [001], [111] des

Crystal and its equivalents (such as [-100], [-1, -1, -1] etc.) and

wherein the paramagnetic center (NV1) emits fluorescence radiation (FL) when excited by the pump radiation (LB) and

wherein the fluorescence radiation (FL) as a function of a magnetic field with a

magnetic flux density B is modulated in a second direction and wherein the second direction deviates from the first direction.

86. Device according to claim 85

wherein the quantum technological device is a sensor system and

whereby the sensor system has means (PLI, Fl, PD, LIV [VI, Ml, TP]),

to influence the pump radiation (LB) and

to detect fluorescence radiation (FL) and

to determine a value as a function of the detected fluorescence radiation (FL), this value being a measure for the magnetic flux density B at the location of the paramagnetic centers (NV1) or for another physical parameter influencing the fluorescence radiation (FL) and

whereby the sensor system outputs this value and / or for further use

made available for retrieval and / or further processed for other purposes.

Claims device with alignment and photocurrent measurement

87 having a quantum technological device

a sensor element,

wherein the sensor element comprises a crystal with a crystal axis and

wherein the crystal has a paramagnetic center (NV1) in the crystal, wherein the quantum technological device has the possibility or means to excite the paramagnetic center (NV1) by means of pump radiation (LB) and wherein the paramagnetic center (NV1) in relation to one of the following relevant crystal axis is aligned in a first direction and where the relevant crystal axes are the crystal axes [100], [010], [001], [111] of the crystal and their equivalents (such as [-100], [-1, -1, -1] etc.) and

whereby the paramagnetic center (NV1) generates an electron current when excited by the pump radiation (LB) and

wherein the electron current is modulated as a function of a magnetic field with a magnetic flux density B in a second direction and

the second direction deviating from the first direction.

88 The apparatus of claim 87

wherein the quantum technological device is a sensor system and

where the sensor system has means (PLI, KNT, LIV [VI, Ml, TP]),

to influence the pump radiation (LB) and

to suck up and capture the flow of electrons and

in order to determine a value as a function of the electron flow detected, this value being a measure for the magnetic flux density B at the location of the paramagnetic centers (NV1) or for another physical parameter influencing the electron flow and

whereby the sensor system outputs this value and / or for further use

made available for retrieval and / or further processed for other purposes.

Method with alignment and fluorescence measurement

89. Method for operating a quantum technological device

comprehensive the steps:

Providing a sensor element,

wherein the sensor element has a crystal with a crystal axis and wherein the crystal has a paramagnetic center (NV1) in the crystal. Irradiating the paramagnetic center (NV1) with pump radiation (LB) with a

_Pump radiation _wavelength (A _pmp );

Emitting fluorescence radiation (FL) as a function of the pump radiation (LB) and as a function of the value of a total magnetic flux density B at the location of the paramagnetic center (NV1) based on a coordinate system at rest with the coordinate origin in the paramagnetic center (NV1); Detecting at least part of the fluorescence radiation (FL) and determining a value of the fluorescence radiation (FL);

characterized by

that the paramagnetic center (NV1) is aligned in a first direction with respect to one of the following respective crystal axes, the respective crystal axes being the crystal axes [100], [010], [001], [111] of the crystal and their equivalents (such as e.g. [-100], [-1, -1, -1] etc.) are, and

that the vector of the magnetic flux density B points in a second direction and that this second direction deviates from the first direction.

90. Apparatus according to claim 89

wherein the quantum technological device is a sensor system and

whereby the sensor system has means (PLI, Fl, PD, LIV [VI, Ml, TP]),

to influence the pump radiation (LB) and

to detect fluorescence radiation (FL) and

to determine a value as a function of the detected fluorescence radiation (FL), this value being a measure for the magnetic flux density B at the location of the paramagnetic centers (NV1) or for another physical parameter influencing the fluorescence radiation (FL) and

whereby the sensor system outputs this value and / or for further use

made available for retrieval and / or further processed for other purposes.

Method with alignment and electron current measurement

91. Method for operating a quantum technological device

comprehensive the steps:

Providing a sensor element,

wherein the sensor element has a crystal with a crystal axis and wherein the crystal has a paramagnetic center (NV1) in the crystal. Irradiating the paramagnetic center (NV1) with pump radiation (LB) with a

_Pump radiation _wavelength (A _pmp );

Generating an electron current as a function of the pump radiation (LB) and in

Dependence on the value of a total magnetic flux density B at the location of the paramagnetic center (NV1) based on a system of coordinates at rest with the origin of coordinates in the paramagnetic center (NV1);

Detecting at least a part of the electron flow and determining a value of the electron flow;

characterized by

that the paramagnetic center (NV1) is aligned in a first direction with respect to one of the following respective crystal axes, the respective crystal axes being the crystal axes [100], [010], [001], [111] of the crystal and their equivalents (such as e.g. [-100], [-1, -1, -1] etc.) are, and

that the vector of the magnetic flux density B points in a second direction and that this second direction deviates from the first direction.

92 Apparatus according to claim 91

wherein the quantum technological device is a sensor system and

whereby the sensor system has means (PLI, Fl, PD, LIV [VI, Ml, TP]),

to influence the pump radiation (LB) and

to record the electron flow and

in order to determine a value as a function of the electron flow detected, this value being a measure for the magnetic flux density B at the location of the paramagnetic centers (NV1) or for another physical parameter influencing the electron flow and

whereby the sensor system outputs this value and / or for further use

made available for retrieval and / or further processed for other purposes.

Claims basic measurement method

93. Procedure

for converting acoustic or other mechanical vibrations and / or

Position information and / or position change information and / or position change acceleration information in optical signals and / or digital electrical signals and / or analog electrical signals, with the steps

Generating a magnetic flux density B modulated with a first modulation signal, which may be constant; Detection of this modulated magnetic flux density B by means of a device based on paramagnetic centers (NV1) in a diamagnetic material, and

Conversion of the detected value of the modulated magnetic flux density B into an optical signal and / or a digital electrical signal and / or an analog electrical signal with a signal value that depends on the value of the modulated magnetic flux density B.

Device with measurement of a string vibration

94. Device, in particular for measuring the fluorescence radiation (FL) of paramagnetic centers (NV1) and the physical parameters influencing them,

with a pump radiation source (PLI) and

with a diamagnetic material (MPZ) and

with a radiation receiver (PD) and

with a mechanical system (MS) and

with a first field source (MQ1),

wherein the diamagnetic material (MPZ) has a paramagnetic center (NV1) and / or several paramagnetic centers (NV1) and

wherein the pump radiation source (PLI) is one for the excitation of the paramagnetic

Center or the paramagnetic centers (NV1) emits suitable pump radiation (LB) and

the paramagnetic center (NV1) or the paramagnetic centers (NV1) being irradiated by pump radiation (LB)

where the paramagnetic center or the paramagnetic centers (NV1)

Emit fluorescent radiation (FL) and

wherein the first field source (MQ1) with the mechanical system (MS) mechanically

is coupled and

wherein the mechanical system (MS) allows and / or causes a movement of the first field source (MQ1) relative to the diamagnetic material (MPZ) and

wherein the radiation receiver (PD) detects the fluorescence radiation (FL) and converts it into a

Receiver output signal (SO) and / or a signal (S1) derived therefrom that converts from the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or depends on a physical parameter influencing them,

where in particular the value of the receiver output signal (SO) and / or the value of a signal (Sl) derived therefrom depends on the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or on a physical parameter influencing them and thus represents a measure for the fluorescence radiation (FL) of the paramagnetic center (NV1) or the paramagnetic centers (NV1) or for the physical parameters influencing these, at least in terms of value ranges.

Claims jewelry diamonds

95. Jewelry diamond

wherein the jewelry diamond is a single crystal and

wherein the jewelry diamond is colored by a coloring process and

wherein the jewelry diamond appears red to a human observer when illuminated with white light and

where the jewelry diamond has a first absorption coefficient (a _,! ) at a

Has irradiation with light with a wavelength of 437 nm in at least one possible direction of irradiation at room temperature and wherein the jewelry diamond has a second absorption coefficient (a ₂ ) at a

Has irradiation with light with a wavelength of 500 nm in at least one possible direction of irradiation at room temperature and wherein the jewelry diamond has a third absorption coefficient (a ₃ ) at a

Has irradiation with light with a wavelength of 570nm in at least one possible direction of irradiation at room temperature and wherein the jewelry diamond has a fourth absorption coefficient (a ₄ ) at a

Has irradiation with light with a wavelength of 800 nm in at least one possible direction of irradiation at room temperature and wherein the jewelry diamond has a fifth absorption coefficient (a ₅ ) at a

Has irradiation with light with a wavelength between 200 nm and 400 nm in at least one possible direction of irradiation at room temperature and wherein the fifth absorption coefficient (a ₅ ) is greater than the first absorption coefficient (a) and

wherein the first absorption coefficient (oti) is greater than the third absorption coefficient (a ₃ ) and

wherein the third absorption coefficient (a ₃ ) is greater than the second absorption coefficient (a ₂ ) and

wherein the second absorption coefficient (a ₂ ) is greater than the fourth absorption coefficient (a ₄ ) and

where the difference between the third absorption coefficient (a ₃ ) minus the second

Absorption coefficient (a ₂ ) is smaller than the difference from the second

Absorption coefficient (a ₂ ) minus the fourth absorption coefficient (a ₄ ).

96. Jewelry diamond

wherein the jewelry diamond is colored by a coloring process and

wherein the crystal of the jewelry diamond is made by a crystal growing process and

wherein the jewelry diamond appears red to a human observer when illuminated with white light and

wherein the jewelry diamond has a first absorption coefficient (a ₄ ) at a

Has irradiation with light with a wavelength of 437 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a second absorption coefficient (a ₂ ) at a

Having irradiation with light with a wavelength of 500 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a third absorption coefficient (a ₃ ) at a

Has irradiation with light with a wavelength of 570 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a fourth absorption coefficient (a ₄ ) at a

Has irradiation with light with a wavelength of 800 nm in at least one possible direction of irradiation at room temperature and

wherein the jewelry diamond has a fifth absorption coefficient (a ₅ ) at a

Radiation with light with a wavelength between 200nm and 400nm in has at least one possible radiation direction at room temperature and

wherein the fifth absorption coefficient (a ₅ ) is greater than the first absorption coefficient (oti) and

where the first absorption coefficient (a _,! ) is greater than the third absorption coefficient (a ₃ ) and

wherein the third absorption coefficient (a ₃ ) is greater than the second absorption coefficient (a ₂ ) and

wherein the second absorption coefficient (a ₂ ) is greater than the fourth absorption coefficient (a ₄ ) and

where the difference between the third absorption coefficient (a ₃ ) minus the second

Absorption coefficient (a ₂ ) is smaller than the difference from the second

Absorption coefficient (a ₂ ) minus the fourth absorption coefficient (a ₄ ).

97. Jewelry diamond according to one or more of claims 95 to 96

• where the jewelry diamond has one of the following cuts:

o Pointed stone cut

o Table stone cut

o Rose Cut

o Mazarin cut

o brilliant cut

o pear-shaped cut

o princess cut

o oval cut

o heart cut

o Marquise cut

o emerald cut

o Asscher cut

o Cushion cut

o Radiant cut

o Old European cut

o emerald cut

o Baguette cut

98. Jewelry diamond according to one or more of claims 95 to 97

with a quality grade of Sil or VS1 or better.

99. Jewelry diamond according to one or more of claims 96 to 98

The decorative diamond when illuminated with white light in front of a white background shows the human observer a color corresponding to RAL 3020 and / or RAL3024 and / or RAL 3026 and / or another RAL color 3XXX, where XXX is a three-digit number between 000 and 999 stands.

100. Jewelry diamond according to one or more of claims 97 to 99

wherein the jewelry diamond shows the red color "fancy-red" according to the GIA standard or the jewelry diamond shows the red color "fancy-deep" according to the GIA standard or the jewelry diamond shows the red color "fancy-vivid" according to the GIA standard or where the jewelry diamond shows the red color "fancy dark" according to the GIA standard or where the jewelry diamond shows the red color "fancy intense" according to the GIA standard or where the jewelry diamond shows the red color "fancy light" according to the GIA standard or where the jewelry diamond shows the red color "light" according to the GIA standard or

where the jewelry diamond is a red color corresponding to the pictures of the diamonds on page 13 of John M. King's "GIA Colored Diamonds, Color Reference Charts", Gemological Institute of America, 2006, ISBN-10: 0873110536, ISBN-13: 978- 0873110532 shows or

wherein the jewelry diamond shows the orange-pink color "fancy-red" according to the GIA standard or the jewelry diamond shows the orange-pink color "fancy-deep" according to the GIA standard or the jewelry diamond the orange-pink color "fancy-vivid" "shows according to the GIA standard or wherein the jewelry diamond shows the orange-pink color" fancy-dark "according to the GIA standard or wherein the jewelry diamond shows the orange-pink color" fancy-intense "according to the GIA standard or

where the jewelry diamond shows the orange-pink color "fancy light" according to the GIA standard or where the jewelry diamond shows the orange-pink color "light" according to the GIA standard or where the jewelry diamond has an orange-pink color according to the pictures of the diamonds on page Figure 12 of John M. King's GIA Colored Diamonds, Color Reference Charts, Gemological Institute of America, 2006, ISBN-10: 0873110536, ISBN-13: 978-0873110532 shows.

101. Jewelry diamond according to one or more of claims 95 to 100 whereby the jewelry diamond fluoresces with a color in the range of 637nm +/- 10nm when illuminated with white light against a white background.

102. Jewelry diamond according to one or more of claims 95 to 101

wherein the jewelry diamond has a fluorescence with a color temperature of less than 2000K and / or less than 1000K.

103. Jewelry diamond according to one or more of claims 95 to 102

wherein the jewelry diamond has a color temperature of less than 1000K when exposed to white light in at least one direction of transmission.

104. Jewelry diamond according to one or more of claims 95 to 103

• having a density of NV centers of more than 0.01ppm and / or of more than 10-3ppm and / or of more than 10-4ppm and / or of more than 10-5ppm and / or of more than 10- 6ppm based on the number of carbon atoms per unit volume.

105. Jewelry diamond according to one or more of claims 96 to 104

The density of the NV centers is less than 10 ppm and / or less than 2 ppm and / or less than 1 ppm and / or less than 0.5 ppm and / or less than 0.2 ppm and / or less than 0 , lppm and / or less than 0.05ppm and / or less than 0.02ppm and / or less than 0.01ppm and / or less than 0.005ppm and / or less than 0.002ppm and / or less than 0.001ppm and / or less than 5 * 10-4 ppm and / or less than 2 * 10-4 ppm and / or less than 10-5ppm and / or less than 5 * 10-5 ppm and / or less than 2 * 10-5 ppm and / or less than 10-6 ppm and / or less than 5 * 10-6 ppm and / or less than 2 * 10-6 ppm and / or less than 10 -7ppm based on the number of carbon atoms per unit volume.

106. Jewelry diamond according to one or more of claims 95 to 105

• wherein the jewelry diamond has traces of irradiation with particles, in particular with electrons and / or protons.

107. A method for the production of one or more red jewelry diamonds, in particular according to one or more of claims 95 to 106:

• Provision of the diamond blank (s), wherein the diamond blank (s) comprise nitrogen atoms in the form of pi centers and / or

wherein the diamond blank (s) have a yellow color and / or

wherein the diamond blank (s) comprise nitrogen atoms together with hydrogen;

• irradiating the diamond blank (s) with electrons,

the energy of the electrons being greater than 500keV and / or greater than IMeV and / or greater than 3MeV and / or greater than 4MeV and / or greater than 5MeV and / or greater than 6 MeV and / or greater than 7 MeV is and / or is greater than 8 MeV and / or is greater than 9 MeV and / or is greater than 10 MeV, an energy of IOMeV being preferred

wherein the radiation dose is preferably between 5 * 10 ¹⁷ cm ² and

2 * 10 ¹⁸ cm ² , but at least less than 10 ¹⁹ cm ² and

wherein the temperature of the diamond blank (s) during the

Irradiation at an irradiation temperature greater than 600 ° C. and / or greater than 700 ° C. and / or greater than 800 ° C. and less than 900 ° C. and / or less than 1000 ° C. and / or less than 1100 ° C. and / or less than 1200 ° C. is preferred is between 800 ° C and 900 ° C and

wherein the beam current of the electric current of these electrons is adjusted so that the irradiation time to achieve the above

Irradiation dose is at least 0.05 days and / or at least 0.5 days and / or at least 1 day and / or at least 2 days and / or at least 4 days and / or at least 8 days, but preferably 2 days.

108. The method according to claim 107,

• The diamond blanks are thermally coupled to a heat sink via a thermal resistor during the irradiation.

109. The method according to claim 107 or 108,

wherein the total energy input into the diamond blanks is regulated so that the one temperature probe that is in the vicinity of the diamond blanks during the Irradiation is placed, an average irradiation temperature of the diamond blanks of greater than 600 ° C and / or greater than 700 ° C and / or greater than 800 ° C and less than 900 ° C and / or less than 1000 ° C and / or less than 1100 ° C and / or less than 1200 ° C, preferably between 800 ° C and 900 ° C.

110. The method according to claim 109,

• where the total energy input into the diamond blanks is temporal

Has a constant component and a temporally pulsed component with a temporal pulse interval and a pulse height of the total energy input pulses, the pulse height of the total energy input pulses of the total energy input and / or the temporal pulse interval of the total energy input pulses for regulating the from the

Temperature probe detected mean irradiation temperature is used.

111. The method according to one or more of claims 107 to 110,

• where a diamond blank is a synthetic HPHT diamond or

• where a diamond blank is a synthetic CVD diamond.

112. The method according to one or more of the preceding claims 108 to 111,

• wherein a diamond blank has at least one ground surface before irradiation.

113. The method according to one or more of the preceding claims 108 to 112,

• the irradiation in a vacuum with a residual pressure of less than 10-4 mBar and / or less than 10 ⁵ mBar and / or less than 10 ^s mBar and / or less than 10 ⁷ mBar and / or less than 10 ⁸ mBar and / or less than 10 ⁹ mBar and / or less than 10 ¹⁰ mBar and / or takes place, with a residual pressure of less than 10 ^s mBar being preferred or

• where the irradiation takes place in a protective gas atmosphere, in particular in an agon atmosphere.

114. The method according to one or more of the preceding claims 108 to 113,

• where a diamond blank has one of the following cuts before blasting.

Pointed stone cut

Table stone cut

Rose cut finish

Mazarin cut

Brilliant cut Pear cut

Princess cut

Oval cut

Heart cut

Marquise cut

Emerald cut

Asscher cut

Cushion cut

Radiant cut

Diamond old cut

Emerald cut

Baguette cut

115. The method according to one or more of the preceding claims 108 to 114,

• where a diamond blank has a size greater than 0.1 ct and / or greater than 0.2 ct and / or greater than 0.5 ct and / or greater than 1 ct and / or greater than 1.5 ct and / or greater than 2 ct.

116. The method according to one or more of the preceding claims 108 to 115,

wherein the diamond blank (s) are at a process chamber temperature during the irradiation in a temperature-controlled process chamber or wherein the diamond blank (s) are at a process chamber temperature during the irradiation in a temperature-controlled vessel or the process chamber temperature is not more than 200 ° C and / or not deviates more than 100 ° C and / or not more than 50 ° C and / or not more than 20 ° C and / or not more than 10 ° C from the irradiation temperature.

117. The method according to one or more of the preceding claims 108 to 116,

• the diamond blank (s) being in a quartz vessel during the irradiation.

118. Device for carrying out a method according to one or more of the preceding

Claims 108 to 117, comprising

an electron accelerator that delivers electrons with an energy between 2MeV and IOMeV into a process chamber, a vacuum system that is suitable and intended to evacuate the process chamber,

a heater

wherein the heating device is suitable and intended to heat the process chamber and / or a vessel within the process chamber to a process temperature and

a temperature sensor which is suitable and intended to detect the temperature of the process chamber and / or the temperature of the vessel and / or the temperature of one or more diamond blanks within the vessel or within the process chamber as a temperature measurement value and

a controller that is suitable and intended to turn the heating device into

To be controlled depending on the measured temperature value.

119. Use of a method according to one or more of claims 108 to 117 for

Production of one or more red jewelry diamonds, especially one

Decorative diamonds according to one or more of Claims 95 to 106.

120. Use of a method according to one or more of claims 108 to 117 and one

Device according to claim 118 for the production of one or more red ones

Decorative diamonds, in particular a decorative diamond according to one or more of Claims 95 to 106

Method with short pulse

121. Method of operating a sensor system

wherein the sensor system comprises a sensor element and

wherein the sensor element comprises one or more paramagnetic centers (NV1) and comprising the steps

Generating a modulated transmission signal (S5w);

Emitting a modulated pump radiation (LB) depending on the modulated transmission signal (S5w),

Generating a modulated fluorescence radiation (FL) by means of the paramagnetic

Center (NV1) or the paramagnetic centers (NV1) which depends on the modulated pump radiation (LB),

wherein the value of a physical parameter influences the modulated fluorescence radiation (FL) and / or wherein the value of the magnetic flux density B at the location of the paramagnetic center (NV1) influences the modulated fluorescence radiation (FL);

Receiving the modulated fluorescence radiation (FL) and generating a modulated receiver output signal (SO) as a function of the modulated fluorescence radiation (FL);

Correlation of the modulated receiver output signal (SO) with the modulated one

Transmission signal (S5w) or a signal derived therefrom and formation of a filter output signal (S4), the filter output signal (S4) depending on the intensity of the correlation of the modulation of the fluorescence radiation (FL) with the modulated transmission signal (S5w);

Use of the filter output signal (S4) as a measured value for the value of a physical parameter that influences the modulated fluorescence radiation (FL) and / or the value of the magnetic flux density B at the location of the paramagnetic center (NV1),

characterized by

that the modulated transmission signal (S5w) is PWM-modulated with a duty cycle of less than 50% or otherwise pulse-modulated and

that the duty cycle of the modulated transmission signal (S5w) is defined as the transmission signal pulse duration (Ts _Pmp ) divided by the transmission signal period (T _P ).

Claims fiber optic with HD-NV diamond

122. Optical fiber

characterized

that the optical waveguide is optically coupled to an HD-NV diamond, i.e. a diamond according to one or more of claims 78 to 80.

123. Optical functional element

characterized

that the optical functional element comprises an HD-NV diamond, i.e. a diamond according to one or more of claims 78 to 80.

Claims LED with HD-NV diamond

124. Fluorescent light source

characterized that it comprises a pump light source (PLI), the pump radiation (LB) with a

_Pump radiation _wavelength (l _rGTΐr ) generated, and

that it comprises an HD-NV diamond, i.e. a diamond according to one or more of claims 78 to 80,

wherein the HD-NV diamond is irradiated with the pump radiation (LB) and

Emits fluorescence radiation (FL) with a fluorescence radiation wavelength (lh),

wherein the fluorescent radiation (FL) leaves the fluorescent light source.

125. Fluorescence light source according to claim 124

with a first filter (Fl),

that for radiation with the pump radiation _wavelength (l _rGhr ) is essentially not

is transparent and

which is essentially transparent for radiation with the fluorescence wavelength (l ^), so that essentially only the fluorescence radiation (FL) is the fluorescence light source

leaves.

126. Fluorescent light source according to claim 124 or 125

wherein the fluorescence radiation (FL) depends on a physical parameter and / or the magnetic flux density B.

127. Filter (F1) for an optical quantum technological device

wherein the quantum technological device comprises one or more paramagnetic centers (NV1) and / or one or more groups (NVC) of paramagnetic centers (NV1) and

wherein electromagnetic radiation occurs or is used in the sensor system and wherein the filter (F1) is intended to allow predetermined portions of this radiation to pass and other portions of the electromagnetic radiation not to pass and

wherein the filter is constructed from metallization pieces of the metallization stack of an integrated microelectronic circuit.

Claims close spacing

128. Sensor system with one paramagnetic center (NV1) or several paramagnetic centers

Centers (NV1) or a group (NVC) of paramagnetic centers (NV1) or more Groups (NVC) of paramagnetic centers (NV1) in a substrate (D), hereinafter referred to as paramagnetic centers (NV1),

wherein the sensor system comprises first means (G, PLI, Fl, PD, Ml, TP) for the excitation and detection and evaluation of the fluorescence radiation (FL) of these paramagnetic centers (NV1) and

the sensor system using the first means (G, PLI, F1, PD, Ml, TP) as a function of the fluorescence radiation (FL) of these paramagnetic centers (NV1) generates and / or keeps and

wherein the sensor system comprises an electrical conductor (LH, LV, LTG) and

wherein the electrical conductor (LH, LV, LTG) mechanically with the substrate (D) with the

paramagnetic centers (D) is connected and

whereby the electrical conductor (LH, LV, LTG) is traversed by an electrical current (IH, IV),

characterized by

that said electric current (IH, IV) generates a magnetic flux B, which the

Fluorescence radiation (FL) influences these paramagnetic centers (NV1) and that the shortest distance (r) between the center of gravity of the paramagnetic centers (NV1) and the conductor (LH, LV, LTG) is shorter than lpm, better less than 500nm, better less than 200nm, better less than 100nm, better less than 50nm, better less than 20nm or

that the shortest distance (r) between a paramagnetic center (NV1) of the

paramagnetic centers (NV1) and the conductor (LH, LV, LTG) is shorter than lpm, better less than 500nm, better less than 200nm, better less than 100nm, better less than 50nm, better less than 20nm.

Claims thickness amplifier

129. Quantum sensor system for detecting a relative value of a physical parameter with a sensor element and

with evaluation tools (G, PD, VI, Ml, TP),

where the sensor element is a quantum dot

a paramagnetic center (NV1), which is influenced by the physical parameter, or several paramagnetic centers (NV1), which are influenced by the physical parameters, or

a group (NVC) of paramagnetic centers (NV1) which is influenced by the physical parameter, or

comprises several groups (NVC) of paramagnetic centers (NV1), which are influenced by the physical parameter, and

wherein the quantum dot is irradiated with pump radiation (LB) and

wherein the evaluation means (PD, VI) either

detect a first photocurrent of the quantum dot of the sensor element and generate a receiver output signal (SO) as a function of the first photocurrent

or

an intensity (l _fl) of a fluorescence (FL) capture of the quantum dot of the sensor element and generate a receiver output signal (SO) depending on the intensity (l _fl) of a fluorescence (FL), and characterized

with a reference element and

where the reference element is used as the reference quantum dot

a paramagnetic reference center (NV2), which is influenced by the physical parameter, or

several paramagnetic reference centers (NV2) which are influenced by the physical parameter, or a group (NVC2) of paramagnetic reference centers (NV2) which is influenced by the physical parameter, or several groups (NVC2) of paramagnetic reference centers (NV2) which are influenced by the physical parameters is influenced, includes and

whereby the reference quantum dot is irradiated with compensation radiation (KS) and the evaluation means (PD, VI, Ml, TP) either additionally detect a second photocurrent of the reference quantum dot of the reference element and generate a receiver output signal (SO) as a function of the first photocurrent and now additionally also as a function of the second photocurrent at the same time or

additionally detect an intensity (l _{kf |} ) of a compensation fluorescence radiation (KFL) of the reference quantum dot of the reference element and a receiver output signal (SO) as a function of the intensity (l _fl ) of a fluorescence radiation (FL) and now additionally as a function of the intensity (l _{kf |} ) one

Generate compensation fluorescence radiation (KFL) and

the evaluation means (Ml, TP) generating a measured value in the form of the value of a sensor output signal (out) for the difference between the value of the physical parameter at the location of the quantum dot and the value of the physical parameter at the location of the reference quantum dot from the receiver output signal (SO), which is or can be used as a measured value for this measured value.