EP3969202A1 - Mould for manufacturing a component by pouring metal and epitaxial growth, and associated manufacturing method - Google Patents
Mould for manufacturing a component by pouring metal and epitaxial growth, and associated manufacturing methodInfo
- Publication number
- EP3969202A1 EP3969202A1 EP20715095.4A EP20715095A EP3969202A1 EP 3969202 A1 EP3969202 A1 EP 3969202A1 EP 20715095 A EP20715095 A EP 20715095A EP 3969202 A1 EP3969202 A1 EP 3969202A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- seed
- mold
- housing
- monocrystalline
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/06—Permanent moulds for shaped castings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/02—Sand moulds or like moulds for shaped castings
- B22C9/04—Use of lost patterns
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
Definitions
- the present invention relates in particular to a mold intended for use in such processes.
- metal parts or metal alloy parts which have a controlled monocrystalline structure.
- the blades In certain cases, and in particular in aeronautical turbomachines, it is necessary to have metal parts or metal alloy parts which have a controlled monocrystalline structure.
- the blades In the distributors of turbines of aeronautical turbomachines, the blades must withstand significant thermomechanical stresses due to the high temperature and to the centrifugal forces to which they are subjected.
- a controlled monocrystalline structure in the metal alloys forming these blades makes it possible to limit the effects of these stresses.
- the germ can also be a source of defects in the part obtained by such a process.
- current seed configurations can cause the growth of parasitic grains which propagate into the casting.
- Document FR 3 042 725 discloses a mold in which a cylindrical monocrystalline seed is placed and whose dimensions are adapted to reduce the appearance of such parasitic grains.
- the monocrystalline seed used must however, have an indexing element such as a lug on a lower portion thereof which is oriented as a function of a direction of crystallographic orientation of the monocrystalline seed.
- This indexing element is also a source of defects in the part obtained, because it can also be responsible for the appearance of parasitic grains at the time of directed solidification.
- the invention relates to a mold intended to be used to manufacture a monocrystalline part by metal casting and epitaxial growth, the mold
- the housing having an elliptical section in which a single crystal seed is disposed, the seed having an elliptical section defined by a minor axis and a major axis, the housing being in fluid communication with the cavity through an opening of circular section through which molten metal is intended to flow, the monocrystalline seed and the opening being centered on the same vertical axis,
- Such a mold allows easy indexing of the crystallographic directions of the monocrystalline seed by eliminating artifacts such as a lug or a flat on a cylindrical seed, a source of defects in the part.
- the elliptical shape of the seed moreover generates fewer defects than a seed of oblong shape which has a flat lateral surface (and which is therefore not elliptical), in particular because of the difficulty of positioning it in the housing with a clearance low.
- the secondary crystallographic orientations can be the ⁇ 100> and ⁇ 010> directions of the single crystal forming the seed.
- the minor axis and the major axis may in particular coincide respectively with said secondary crystallographic orientations, or possibly form an angle
- the elliptical section of the seed may have an eccentricity greater than or equal to 0.5 and less than 1. Such an eccentricity allows easier identification of the crystallographic orientations, and a reduced bulk compatible with geometries complex molds.
- the elliptical section of the seed may have an eccentricity of between 0.55 and 0.82.
- a blocking distance corresponding to the difference between the half-length of the minor axis of the section of the seed and a radius of the opening may be greater than or equal to 2.4 mm.
- the spread of parasitic grains is considerably reduced for a difference between the radii of the opening and the semi minor axis of the germ greater than or equal to 2.4 mm. This difference is here called “blocking distance” because it is characteristic of blocking the propagation of parasitic grains in the part.
- side of the housing may be less than or equal to 0.03 mm.
- a reduced clearance allows correct positioning of the germ in the housing and also reduces the propagation of parasitic grains.
- the distance separating an upper surface of the seed and an upper surface of the housing is between 5 mm and 10 mm. Such a distance also makes it possible to reduce the propagation of parasitic grains while obtaining correct epitaxy.
- the monocrystalline seed may have a chamfer or a rounding around the perimeter of its upper edge.
- the mold can be intended to be used to manufacture a turbine engine blade. It may for example be an aeronautical turbomachine distributor blade.
- the elliptical section of the seed may have an eccentricity of between 0.55 and 0.82
- the minor axis may have a length of between 13 mm and 16 mm
- the opening may have a radius of between 4 mm and 5 mm
- the distance separating an upper surface of the seed and an upper surface of the housing may be between 5 mm and 10 mm.
- the invention also relates to a method of manufacturing a part
- a mold comprising a cavity in which the part is intended to be formed, and a housing having an elliptical section in which is disposed a monocrystalline seed, the seed having an elliptical section defined by a small axis and a large axis, the minor axis and the major axis of the section of the seed being oriented as a function of the secondary crystallographic orientations of the single crystal forming the single crystal seed, the housing being in
- the monocrystalline part to be manufactured can be a part for aeronautics.
- part for aeronautics is meant a part that can be used in a turbojet intended to propel an aircraft, for example: an aeronautical turbomachine blade, a turbine ring, a low pressure distributor, a chamber injection system aircraft combustion, an aircraft injection system component, a flange, a clamping system, an engine equipment support, a cover, etc.
- Figure 1 is a flowchart showing the different steps of a process according to the invention.
- Figure 2 is a schematic sectional view of a mold according to
- the invention disposed in a directed solidification furnace.
- Figure 3 shows a monocrystalline seed for use in a mold according to one embodiment of the invention.
- Figure 4 is an enlarged view of Figure 2 at a
- Figure 5 is a top view of the housing of a mold according to an embodiment of the invention.
- the first step of a manufacturing process by metal casting and epitaxial growth consists in obtaining a model, for example in wax, of the part to be manufactured (step E1).
- the wax model is covered with a ceramic shell (or shell) (step E2), for example by successive quenching in a suitable slip and stucco in a ceramic powder.
- the model provided with its shell is then fired and dewaxed (step E3), that is to say that the wax present in the ceramic mold obtained is eliminated.
- An example of a mold 1 according to the invention obtained from a wax model is illustrated in Figures 2 to 4.
- the ceramic mold 1 comprises in particular one or more cavities 10 (here two cavities have been shown on Figure 1) having the shape of the part to be manufactured (here a distributor blade of
- aeronautical turbomachine which are open at their upper ends and interconnected by channels opening into a conical part, or bucket 11. It is in the bucket 1 1 that the metal will be subsequently poured before traveling into the cavities 10 .
- the mold 1 also comprises housings 12 in which are
- step E4 There are typically as many housings 12 as there are cavities 10.
- a housing 12 is located below a cavity 10 and is in fluid communication with the cavity which surmounts it through an opening 13, so that metal liquid can be introduced from the cavity 10 into the housing 12.
- the channel connecting the opening 13 and the cavity 10 is here of cylindrical shape. It will be noted that the mold 1 does not have a helical type grain selector duct.
- the housing 12 and the monocrystalline seed 2 are elliptical in shape (that is to say having a constant elliptical section over their entire height).
- the housing 12 and the seed 2 have similar dimensions so as to leave the smallest possible clearance J (figure 5) between the side wall of the housing 12 and the seed 2 to prevent liquid metal from infiltrating around the seed. 2 during casting and generates parasitic grains during solidification of the metal.
- This clearance J may be less than or equal to 0.03 mm.
- a base 14 which maintains the germ 2 in the housing 12, and which also supports the assembly of the mold 1 when it is in the vertical position.
- the seed 2 shown in perspective in Figure 3, has a section
- a dendrite 2a schematizing the secondary crystallographic orientations of the single crystal forming the seed 2.
- the dendrite thus defines an X direction corresponding to the crystallographic orientation ⁇ 100>, a Y direction corresponding to the orientation ⁇ 010>, and a Z direction perpendicular to the X and Y directions corresponding to the orientation ⁇ 001>.
- the minor axis P1 and the major axis P2 respectively coincide with the Y and X directions.
- the eccentricity of the ellipse defining the seed 2 is preferably between 0.5 and 1 (excluded), and even more preferably between 0.55 and 0.82 for the envisaged application.
- the seed 2 here has a rounded 2b around the perimeter of its upper edge.
- the seed 2 may have a chamfer instead of a rounding.
- seed 2 does not completely occupy housing 12, and a space is provided between the upper end of seed 2 and opening 13 into which liquid metal can be poured.
- Figure 4 shows a detailed view of a housing 12 in which is
- the seed 2 and the opening 13 are centered on the same vertical axis Z.
- the seed 2 has a length Lg, which is for example between 40 and 45 mm.
- the opening 13 (or the upper wall of the housing 12) can be separated from the upper surface of the seed 2 by a distance d between 5 mm and 10 mm to obtain correct epitaxy.
- the opening 13 can for example extend over a length Ld of the order of 5 mm.
- the radius of the opening Rd is greater than or equal to 4 mm to reduce the impact of the opening on the strength of the mold 1. More preferably, the radius of the opening Rd is less than or equal to 5 mm, to ensure correct filling of mold 1 with molten metal.
- the small axis P1 of seed 2 can be longer than 13 mm in order to increase the reliability of mold 1.
- This blocking distance is a quantity characteristic of the propagation of parasitic grains from the housing from the germ 12 to the cavity 10.
- the blocking distance Db can be greater than or equal to 2.4 mm to ensure better blocking of the parasitic grains.
- the oven 3 advantageously has a window upper 31 through which metal can be poured into the mold 1.
- the movable plate 30 allows the mold 1 to be quickly removed from the hot chamber of the oven 3 in order to regulate its temperature.
- Tray 30 can be a cooled copper hearth.
- the seeds 2 can be fixed for example by gluing to the plate 30.
- the mold 1 is brought to temperature in the furnace 3, and liquid metal 40 is poured from a crucible 4 into the mold 1 (step E5), through the window 31 of the furnace.
- the housing 12 of the seeds 2 fill with metal, then the cavities 10 in which the parts are formed.
- the mold 1 is gradually withdrawn from the oven 3, for example by lowering the movable plate 30, in order to reduce the temperature of the mold 1 and to control the solidification of the metal in the mold (step E6).
- the metal grain will grow by epitaxy from the seed, whose crystallographic orientation is well known and controlled.
- the growth of parasitic grains, the orientation of which is not controlled, is avoided, and parts having a structure are obtained after unhooking.
- step E7 After unhooking (step E7) from the mold, we can finally proceed to
- step E8 conventional finishing machining
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1904936A FR3095972B1 (en) | 2019-05-13 | 2019-05-13 | Mold for manufacturing a part by metal casting and epitaxial growth and associated manufacturing process |
PCT/EP2020/059628 WO2020229055A1 (en) | 2019-05-13 | 2020-04-03 | Mould for manufacturing a component by pouring metal and epitaxial growth, and associated manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3969202A1 true EP3969202A1 (en) | 2022-03-23 |
Family
ID=68072617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20715095.4A Pending EP3969202A1 (en) | 2019-05-13 | 2020-04-03 | Mould for manufacturing a component by pouring metal and epitaxial growth, and associated manufacturing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US11878338B2 (en) |
EP (1) | EP3969202A1 (en) |
JP (1) | JP2022533097A (en) |
CN (1) | CN113825577B (en) |
BR (1) | BR112021022702A2 (en) |
CA (1) | CA3137702A1 (en) |
FR (1) | FR3095972B1 (en) |
WO (1) | WO2020229055A1 (en) |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR982613A (en) | 1948-01-13 | 1951-06-13 | Babcock & Wilcox Tube Company | Method and device for continuous casting of metals |
GB1365858A (en) | 1973-02-13 | 1974-09-04 | Petrov D A | Manufacturing monocrystalline articles |
DE2528585C3 (en) | 1974-06-28 | 1979-10-11 | Union Carbide Corp., New York, N.Y. (V.St.A.) | Process for the production of doped a -alumina single crystals |
US4714101A (en) | 1981-04-02 | 1987-12-22 | United Technologies Corporation | Method and apparatus for epitaxial solidification |
EP0171343A1 (en) * | 1984-05-11 | 1986-02-12 | United Technologies Corporation | Polygon cross section seed for directional solidification |
US4966645A (en) | 1989-12-04 | 1990-10-30 | At&T Bell Laboratories | Crystal growth method and apparatus |
CN2225916Y (en) * | 1995-04-10 | 1996-05-01 | 冶金工业部钢铁研究总院 | Elliptical crystallizer for continuous casting |
CN1209505C (en) * | 2002-07-04 | 2005-07-06 | 中国科学院金属研究所 | Method for controlling transverse crystal orientation of metal monocrystal |
CN1246507C (en) * | 2003-07-16 | 2006-03-22 | 中国科学院金属研究所 | Method for suppressing stray crystal forming and growing at seed crystal starting end, and casting case construction thereof |
DE102004010377A1 (en) * | 2004-03-03 | 2005-09-22 | Schott Ag | Production of substrate wafers for low-defect semiconductor components, their use, and components obtained therewith |
US20050211408A1 (en) * | 2004-03-25 | 2005-09-29 | Bullied Steven J | Single crystal investment cast components and methods of making same |
FR2905384B1 (en) * | 2006-08-29 | 2008-12-26 | Snecma Sa | PROCESS FOR THE PRODUCTION OF SINGLE CRYSTALLINE GERMS SIMULTANEOUSLY IN THE CASTING OF MONOCRYSTALLINE PARTS |
CN200945520Y (en) | 2006-09-18 | 2007-09-12 | 郭建华 | Even crystal solid-phase abrading-ball metallic mould |
FR2927270B1 (en) * | 2008-02-08 | 2010-10-22 | Snecma | PROCESS FOR MANUFACTURING DIRECTED SOLIDIFICATION AUBES |
GB0815384D0 (en) | 2008-08-26 | 2008-10-01 | Rolls Royce Plc | Directional solidification mould |
US20160079059A1 (en) | 2014-09-17 | 2016-03-17 | International Business Machines Corporation | Elliptical wafer manufacture |
FR3042725B1 (en) | 2015-10-23 | 2019-06-14 | Safran Aircraft Engines | MOLD FOR MANUFACTURING A PIECE BY METAL CASTING AND EPITAXIAL GROWTH, AND METHOD THEREOF |
CN105525350A (en) * | 2015-12-22 | 2016-04-27 | 中国电子科技集团公司第二研究所 | Method for growing large-size and low-defect silicon carbide monocrystal and wafer |
CN107099839A (en) * | 2017-05-16 | 2017-08-29 | 内蒙古恒嘉晶体材料有限公司 | A kind of M is to the preparation technology and M of monocrystalline sapphire to monocrystalline sapphire |
CN108411371B (en) | 2018-06-04 | 2023-06-16 | 北京航空航天大学 | Mould shell for precisely controlling growth orientation of single crystal by seed crystal method and manufacturing method thereof |
CN109695054A (en) | 2018-11-28 | 2019-04-30 | 中国科学院金属研究所 | Monocrystalline part 3 D tropism for seed-grain method controllable directional solidification origination end and directional freeze method |
-
2019
- 2019-05-13 FR FR1904936A patent/FR3095972B1/en active Active
-
2020
- 2020-04-03 CN CN202080036046.2A patent/CN113825577B/en active Active
- 2020-04-03 WO PCT/EP2020/059628 patent/WO2020229055A1/en unknown
- 2020-04-03 BR BR112021022702A patent/BR112021022702A2/en unknown
- 2020-04-03 CA CA3137702A patent/CA3137702A1/en active Pending
- 2020-04-03 EP EP20715095.4A patent/EP3969202A1/en active Pending
- 2020-04-03 JP JP2021568038A patent/JP2022533097A/en active Pending
- 2020-04-03 US US17/610,954 patent/US11878338B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
BR112021022702A2 (en) | 2022-03-29 |
CN113825577A (en) | 2021-12-21 |
FR3095972B1 (en) | 2023-07-07 |
WO2020229055A1 (en) | 2020-11-19 |
FR3095972A1 (en) | 2020-11-20 |
CN113825577B (en) | 2024-01-09 |
US11878338B2 (en) | 2024-01-23 |
CA3137702A1 (en) | 2020-11-19 |
US20220250137A1 (en) | 2022-08-11 |
JP2022533097A (en) | 2022-07-21 |
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