EP3967793A4 - Diamantkristallsubstrat und herstellungsverfahren für ein diamantkristallsubstrat - Google Patents

Diamantkristallsubstrat und herstellungsverfahren für ein diamantkristallsubstrat Download PDF

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Publication number
EP3967793A4
EP3967793A4 EP20806555.7A EP20806555A EP3967793A4 EP 3967793 A4 EP3967793 A4 EP 3967793A4 EP 20806555 A EP20806555 A EP 20806555A EP 3967793 A4 EP3967793 A4 EP 3967793A4
Authority
EP
European Patent Office
Prior art keywords
crystal substrate
diamond crystal
production method
diamond
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20806555.7A
Other languages
English (en)
French (fr)
Other versions
EP3967793A1 (de
Inventor
Koji Koyama
Seongwoo Kim
Yuki Kawamata
Naoki Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orbray Co Ltd
Original Assignee
Adamant Namiki Precision Jewel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adamant Namiki Precision Jewel Co Ltd filed Critical Adamant Namiki Precision Jewel Co Ltd
Publication of EP3967793A1 publication Critical patent/EP3967793A1/de
Publication of EP3967793A4 publication Critical patent/EP3967793A4/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP20806555.7A 2019-05-10 2020-04-27 Diamantkristallsubstrat und herstellungsverfahren für ein diamantkristallsubstrat Pending EP3967793A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019090031 2019-05-10
PCT/JP2020/017910 WO2020230602A1 (ja) 2019-05-10 2020-04-27 ダイヤモンド結晶基板及びダイヤモンド結晶基板の製造方法

Publications (2)

Publication Number Publication Date
EP3967793A1 EP3967793A1 (de) 2022-03-16
EP3967793A4 true EP3967793A4 (de) 2023-01-11

Family

ID=73290041

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20806555.7A Pending EP3967793A4 (de) 2019-05-10 2020-04-27 Diamantkristallsubstrat und herstellungsverfahren für ein diamantkristallsubstrat

Country Status (4)

Country Link
US (1) US11505878B2 (de)
EP (1) EP3967793A4 (de)
JP (1) JPWO2020230602A1 (de)
WO (1) WO2020230602A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3139582A1 (fr) * 2022-09-13 2024-03-15 Diam Concept Procede de production d’une plaque de diamant monocristallin, plaque de diamant monocristallin et plaquette de diamant monocristallin de grande taille
CN118147747A (zh) * 2024-05-11 2024-06-07 山东天岳先进科技股份有限公司 一种大尺寸高质量金刚石晶体及其应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1179621A1 (de) * 1999-03-26 2002-02-13 Japan Science and Technology Corporation Halbleiterdiamant des n-typs und verfahren zu dessen herstellung
JP2010251599A (ja) * 2009-04-17 2010-11-04 National Institute Of Advanced Industrial Science & Technology 単結晶ダイヤモンド基板
JP2016502757A (ja) * 2012-11-06 2016-01-28 シンマット, インコーポレーテッドSinmat, Inc. 平滑なダイヤモンド表面、及びその形成のためのｃｍｐ方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140076566A (ko) * 2011-10-07 2014-06-20 아사히 가라스 가부시키가이샤 탄화규소 단결정 기판 및 연마액
WO2015119067A1 (ja) * 2014-02-05 2015-08-13 並木精密宝石株式会社 ダイヤモンド基板及びダイヤモンド基板の製造方法
KR102106722B1 (ko) * 2015-07-29 2020-05-04 쇼와 덴코 가부시키가이샤 에피택셜 탄화규소 단결정 웨이퍼의 제조 방법
JP6887893B2 (ja) * 2017-06-23 2021-06-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法、単結晶ダイヤモンド複合体および単結晶ダイヤモンド基板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1179621A1 (de) * 1999-03-26 2002-02-13 Japan Science and Technology Corporation Halbleiterdiamant des n-typs und verfahren zu dessen herstellung
JP2010251599A (ja) * 2009-04-17 2010-11-04 National Institute Of Advanced Industrial Science & Technology 単結晶ダイヤモンド基板
JP2016502757A (ja) * 2012-11-06 2016-01-28 シンマット, インコーポレーテッドSinmat, Inc. 平滑なダイヤモンド表面、及びその形成のためのｃｍｐ方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020230602A1 *

Also Published As

Publication number Publication date
EP3967793A1 (de) 2022-03-16
US20210062362A1 (en) 2021-03-04
WO2020230602A1 (ja) 2020-11-19
US11505878B2 (en) 2022-11-22
JPWO2020230602A1 (de) 2020-11-19

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Owner name: ORBRAY CO., LTD.