EP3956981A1 - Récepteur à large bande pour communication sans fil à ondes millimétriques multibandes - Google Patents
Récepteur à large bande pour communication sans fil à ondes millimétriques multibandesInfo
- Publication number
- EP3956981A1 EP3956981A1 EP20791902.8A EP20791902A EP3956981A1 EP 3956981 A1 EP3956981 A1 EP 3956981A1 EP 20791902 A EP20791902 A EP 20791902A EP 3956981 A1 EP3956981 A1 EP 3956981A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- signal
- loi
- loq
- differential
- signals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004891 communication Methods 0.000 title description 10
- 238000012545 processing Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000003190 augmentative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
- H03D7/165—Multiple-frequency-changing at least two frequency changers being located in different paths, e.g. in two paths with carriers in quadrature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B27/00—Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1483—Balanced arrangements with transistors comprising components for selecting a particular frequency component of the output
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/18—Modifications of frequency-changers for eliminating image frequencies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0001—Circuit elements of demodulators
- H03D2200/0019—Gilbert multipliers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0043—Bias and operating point
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
Definitions
- Embodiments of the present invention relate generally to wireless communication devices. More particularly, embodiments of the invention relate to a multi-band image-reject receiver for a communication device.
- next-generation 5G communication devices a higher data rate is required for many applications such as augmented reality (AR)/virtual reality (VR), and fifth generation (5G) multiple-input and multiple-output (MIMO).
- AR augmented reality
- VR virtual reality
- MIMO multiple-input and multiple-output
- mm-wave millimeter- wave
- a broader bandwidth is required to facilitate the higher data rate.
- a broader bandwidth should cover the 5G spectrum including the 24, 28, 37, and 39GHz bands.
- a low intermediate frequency (IF) receiver architecture may be popular for communication devices to avoid drawbacks from a zero-IF down-conversion receiver such as flicker noise and dc offset.
- mm-wave wideband in-phase quadrature (IQ) local oscillator (LO) generation for a low-IF receiver can be very lossy degrading performance of down-conversion mixers of the receiver.
- IQ in-phase quadrature
- LO local oscillator
- Figure 1 is a block diagram illustrating an example of a wireless communication device according one embodiment.
- Figure 2 is a block diagram illustrating an example of an RF frontend integrated circuit according to one embodiment.
- Figure 3 is a block diagram illustrating an RF transceiver integrated circuit according to one embodiment.
- Figure 4 is a schematic diagram illustrating an example of a wideband receiver circuit according to one embodiment.
- Figure 5 is a schematic diagram illustrating an example of a transformer-based IQ generator according to one embodiment.
- Figure 6 shows a simulation result of voltage gain with different load resisters according to one embodiment.
- Figure 7 is a block diagram illustrating an example of a transformer-based IQ generator layout according to one embodiment.
- Figure 8 is a schematic diagram illustrating an example of a mixer according to one embodiment.
- Figure 9 is a schematic illustrating an impedance matching network between a T/R switch and an LNA according to one embodiment.
- signals are represented with lines. Some lines may be thicker, to indicate more constituent signal paths, and/or have arrows at one or more ends, to indicate primary information flow direction. Such indications are not intended to be limiting. Rather, the lines are used in connection with one or more exemplary embodiments to facilitate easier understanding of a circuit or a logical unit. Any represented signal, as dictated by design needs or preferences, may actually comprise one or more signals that may travel in either direction and may be implemented with any suitable type of signal scheme.
- the term“connected” means a direct electrical connection between the things that are connected, without any intermediary devices.
- the term“coupled” means either a direct electrical connection between the things that are connected, or an indirect connection through one or more passive or active intermediary devices.
- the term“circuit” means one or more passive and/or active components that are arranged to cooperate with one another to provide a desired function.
- signal means at least one current signal, voltage signal or data/clock signal.
- the meaning of“a”,“an”, and“the” include plural references.
- the meaning of“in” includes“in” and“on”.
- the transistors are metal oxide semiconductor (MOS) transistors, which include drain, source, gate, and bulk terminals. Source and drain terminals may be identical terminals and are interchangeably used herein.
- MOS metal oxide semiconductor
- CMOS complementary metal oxide semiconductor
- BJT PNP/NPN Bi-polar junction transistors
- BiCMOS BiCMOS
- CMOS complementary metal oxide semiconductor
- an RF receiver includes a low-noise amplifier (LNA) to receive and amplify RF signals, a transformer-based IQ generator circuit, one or more load resisters, and a downconverter having one or more mixers.
- the transformer- based IQ generator is configured to generate a differential in-phase local oscillator (LOI) signal and a differential quadrature (LOQ) signal based on a local oscillator (LO) signal received from an LO.
- the load resisters are coupled to an output of the transformer-based IQ generator. Each of the load resisters is configured to couple one of the differential LOI and LOQ signals to a predetermined bias voltage.
- the mixers are coupled to the LNA and the transformer-based IQ generator to receive and mix the RF signals amplified by the LNA with the differential LOI and LOQ signals to down convert the amplified RF signals into IF signals, which can be processed by a signal processing module or a signal processor such as a digital signal processor (DSP).
- DSP digital signal processor
- the transformer-based IQ generator includes a positive LOI (LOI+) port to produce an LOI+ signal based on the LO signal.
- LOI+ positive LOI
- transformer-based IQ generator further includes a negative LOI (LOI-) port to produce an LOI- signal based on the LO signal.
- the LOI+ and LOI- signals represent a differential LOI signal.
- the transformer-based IQ generator further includes a positive LOQ (LOQ+) port to produce an LOQ+ signal based on the LO signal and a negative LOQ (LOQ-) port to produce an LOQ- signal based on the LO signal.
- the LOQ+ and LOQ- signals represent a differential LOQ signal.
- the mixers include a first mixer and a second mixer.
- the downconverter includes a first low-pass filter coupled to the first mixer to mix an RF signal with the LOI+ signal to generate a positive in-phase IF (IFI+) signal, a second low-pass filter coupled to the second mixer to mix the RF signal with the LOI- signal to generate a negative in-phase IF (IFI-) signal, and a first IF amplifier coupled to the first and second low-pass filters to amplify the IFI+ and IFI- signals to generate a first differential IF signal.
- IFI+ positive in-phase IF
- IFI- negative in-phase IF
- the mixers further include a third mixer and a fourth mixer.
- the downconverter further includes a third low-pass filter coupled to the third mixer to mix the RF signal with the LOQ+ signal to generate a positive quadrature IF (IFQ+) signal, a fourth low-pass filter coupled to the fourth mixer to mix the RF signal with the LOQ- signal to generate a negative quadrature IF (IFQ-) signal, and a second IF amplifier coupled to the third and fourth low-pass filters to amplify the IFQ+ and IFQ- signals to generate a second differential IF signal.
- IFQ+ positive quadrature IF
- IFQ- negative quadrature IF
- the downconverter further includes a poly -phase filter (PPF) coupled to the first IF amplifier and the second IF amplifier to generate a third differential IF signal based on the first and second differential IF signals, and a third IF amplifier coupled to the PPF to amplify the third differential IF signal to generate a fourth differential IF signal, wherein the fourth differential IF signal is processed by the signal processing module.
- PPF poly -phase filter
- the load resisters include a first load resister coupled between the LOI+ port and the predetermined bias voltage, a second load resister coupled between the LOI- port and the predetermined bias voltage, a third load resister coupled between the LOQ+ port and the predetermined bias voltage, and a fourth load resister coupled between the LOQ- port and the predetermined bias voltage.
- Each of the load resisters is ranging from 50 to 500 ohms.
- the differential LOI and the differential LOQ signals are ranging from 25 to 50 gigahertz (GHz).
- each of the mixers includes a first stage amplifier, where the first stage amplifier comprises a first differential transistor (or metal-oxide semiconductor field-effect transistor, short for MOSFET) pair having a first and a second transistor, where a first gate terminal of the first transistor and a second gate terminal of the second transistor together forms a differential RF input port to receive a differential RF input signal to be mixed; and a second stage amplifier coupled to the first stage amplifier, where the second stage amplifier includes a second differential transistor (or MOSFET) pair having a third transistor with a third gate terminal and a fourth transistor with a fourth gate terminal and a third differential transistor pair having a fifth transistor with a fifth gate terminal and a sixth transistor with a sixth gate terminal, where the third gate terminal is coupled to the fifth gate terminal and the fourth gate terminal is coupled to the sixth gate terminal, where the third gate terminal and the fifth gate terminal forms a differential LO input port to receive a differential LO drive signal to drive the mixer.
- the first stage amplifier comprises a first differential transistor (or metal-oxide semiconductor field
- a first drain terminal of the first transistor of the first differential transistor pair is coupled to source terminals of the third and the fourth transistors of the second differential transistor pair via a first inductor
- a second drain terminal of the second transistor of the first differential transistor pair is coupled to source terminals of the fifth and the sixth transistors of the third differential transistor pair via a second inductor, where the first and the second inductors form a differential inductor pair.
- a drain terminal of the third transistor is coupled to a drain terminal of the fifth transistor as a first output
- a drain terminal of the fourth transistor is coupled to a drain terminal of the sixth transistor as the second output, where the first and the second output forms a differential output port to output a differential mixed signal.
- an RF frontend circuit includes a transmitting and receiving (T/R switch to be coupled an antenna, an RF transmitter, and an RF receiver, where the T/R switch is configured to couple the RF transmitter or the RF receiver to the antenna at a particular point in time.
- the RF receiver includes at least some of the components as described above.
- a mobile device includes an antenna, an RF receiver, and a signal processor. The RF receiver includes at least some of the components as described above.
- FIG. 1 is a block diagram illustrating an example of a wireless communication device according one embodiment of the invention.
- wireless communication device 100 also simply referred to as a wireless device, includes, amongst others, an RF frontend module 101 and a baseband processor 102.
- Wireless device 100 can be any kind of wireless communication devices such as, for example, mobile phones, laptops, tablets, network appliance devices (e.g., Internet of thing or IOT appliance devices), etc.
- the RF frontend is a generic term for all the circuitry between the antenna up to and including the mixer stage. It consists of all the components in the receiver that process the signal at the original incoming radio frequency, before it is converted to a lower frequency, e.g., IF.
- IF lower frequency
- a baseband processor is a device (a chip or part of a chip) in a network interface that manages all the radio functions (all functions that require an antenna).
- RF frontend module 101 includes one or more RF transceivers, where each of the RF transceivers transmits and receives RF signals within a particular frequency band (e.g., a particular range of frequencies such as non-overlapped frequency ranges) via one of a number of RF antennas.
- the RF frontend IC chip 101 further includes an IQ generator and/or a frequency synthesizer coupled to the RF transceivers.
- the IQ generator or generation circuit generates and provides an LO signal to each of the RF transceivers to enable the RF transceiver to mix, modulate, and/or demodulate RF signals within a corresponding frequency band.
- the RF transceiver(s) and the IQ generation circuit may be integrated within a single IC chip as a single RF frontend IC chip or package, which will be described in details further below.
- FIG. 2 is a block diagram illustrating an example of an RF frontend integrated circuit according to one embodiment of the invention.
- RF frontend 101 includes, amongst others, an IQ generator and/or frequency synthesizer 200 coupled to a multi-band RF transceiver 211.
- Transceiver 211 is configured to transmit and receive RF signals within one or more frequency bands or a broad range of RF frequencies via RF antenna 221.
- transceiver 211 is configured to receive one or more LO signals from IQ generator and/or frequency synthesizer 200. The LO signals are generated for the one or more corresponding frequency bands.
- the LO signals are utilized to mix, modulate, demodulated by the transceiver for the purpose of transmitting and receiving RF signals within corresponding frequency bands.
- the LO signals are utilized to mix, modulate, demodulated by the transceiver for the purpose of transmitting and receiving RF signals within corresponding frequency bands.
- FIG. 3 is a block diagram illustrating an RF transceiver integrated circuit (IC) according to one embodiment.
- RF transceiver 300 may represent RF transceiver 211 of Figure 2.
- frequency synthesizer 300 may represent frequency synthesizer 200 as described above.
- RF transceiver 300 can include frequency synthesizer 300, transmitter 301, and receiver 302. Frequency synthesizer 300 is communicatively coupled to transmitter 301 and receiver 302 to provide LO signals.
- Transmitter 301 can transmit RF signals for a number of frequency bands.
- Receiver 302 can receive RF signals for a number of frequency bands.
- Receiver 302 includes a low noise amplifier (LNA) 306, mixer(s) 307, and filter(s) 308.
- LNA 306 is to receive RF signals from a remote transmitter via antenna 310 and to amplify the received RF signals.
- the amplified RF signals are then demodulated by mixer(s) 307 (also referred to as a down-convert mixer) based on an LO signal provided by IQ generator 317.
- IQ generator 317 may represent IQ generator 200 as described above.
- IQ generator 317 is integrated into broadband receiver 302 as a single integrated circuit.
- the demodulated signals are then processed by filter(s) 308, which may be a low-pass filter.
- transmitter 301 and receiver 302 share antenna 310 via a transmitting and receiving (T/R) switch 309.
- T/R switch 309 is configured to switch between transmitter 301 and receiver 302 to couple antenna 310 to either transmitter 301 or receiver 302 at a particular point in time.
- T/R switch 309 is configured to switch between transmitter 301 and receiver 302 to couple antenna 310 to either transmitter 301 or receiver 302 at a particular point in time.
- FIG 4 is a block diagram illustrating an example of an RF receiver according to one embodiment.
- RF receiver 302 includes, amongst others, a low- noise amplifier (LNA) 306 to receive and amplify RF signals, a transformer-based IQ generator 317, one or more load resisters (not shown), one or more mixers 307, and a downconverter.
- the transformer-based IQ generator 317 is configured to generate a differential in-phase local oscillator (LOI) signal and a differential quadrature (LOQ) signal based on a local oscillator (LO) signal received from an LO 315.
- the load resisters are coupled to an output of the transformer-based IQ generator 317.
- Each of the load resisters is configured to couple one of the differential LOI and LOQ signals (e.g., LOI+, LOI-, LOQ+, or LOQ- signals in this example) to a predetermined bias voltage (not shown).
- the mixers 307 are coupled to the LNA 306 and the transformer-based IQ generator 317 to receive and mix the RF signals amplified by the LNA 306 with the differential LOI and LOQ signals to down convert the RF signals into IF signals, which can be processed by a signal processing module or a signal processor such as a digital signal processor (DSP).
- the downconverter is represented by a set of low-pass filters 311, a set of one or more IF amplifiers 312 (e.g., variable gain amplifiers), a poly-phase filter 313, and another IF amplifier 314.
- transformer-based IQ generator 317 there are four mixers coupled to an output of LNA 306 and an output of transformer-based IQ generator 317.
- the output of transformer-based IQ generator 317 includes four LO signals (e.g., LOI+, LOI-, LOQ+, and LOQ- signals) based on the original LO signal provided by LO 315 (e.g., LOIN+ and LOIN-).
- LOI+ and LOI- represent a differential in-phase signal and LOQ+ and LOQ- represent a differential quadrature signal.
- LOIN+ and LOIN- represent a differential LO input signal to transformer-based IQ generator 317.
- Low-pass filters 311 include four low-pass filters, one for each of mixers 307 to perform a low-pass operation on the RF signals from the corresponding mixer to convert the RF signal to an IF signal, in this example, IFI+, IFI-, IFQ+, and IFQ- signals.
- the pair of IFI+ and IFI- signals are fed into a differential input of IF amplifiers 312A, while the pair of IFQ+ and IFQ- signals are fed into a differential input of IF amplifiers 312B.
- the outputs of the IF amplifiers 312 (collectively represented by IF amplifiers 312A and 312B) are coupled to an input of PPF 313.
- Another IF amplifier 314 is coupled to the output of PPF 313 to further amplify the IF signals.
- the amplified IF signals produced by IF amplifier 314 can be processed further downstream by a signal processor (e.g., DSP or baseband processor).
- PPF 313 can filter out higher frequency noise and can recombine the four in-phase and quadrature signals back into a differential pair of IF signals, e.g., IFI+, IFI-, IFQ+, and IFQ- signals.
- PPF 313 is a resistive-capacitive capacitive-resistive (RC CR) PPF.
- PPF 313 can filter out undesirable signal noise, e.g., high frequency noise outside the range of the IF frequencies, and can combine the four in-phase and quadrature signals, e.g., IFI+, IFI-, IFQ+, and IFQ- signals, into a differential pair of intermediate IF signals.
- amplifier 314 to further amplify the differential intermediate IF signals to generate IF+ and IF- as an output.
- FIG. 5 is a schematic diagram illustrating an example of a transformer-based IQ generator according to one embodiment.
- the transformer-based IQ generator 317 also referred to as a transformer-based IQ network, includes a positive LOI (LOI+) port to produce an LOI+ signal and a negative LOI (LOI-) port to produce an LOI- signal based on LO input signals LOIN+ and LOIN- generated from LO 315.
- the LOI+ and LOI- signals represent a differential in-phase signal, a positive LOQ (LOQ+) port to produce an LOQ+ signal, and a negative LOQ (LOQ-) port to produce an LOQ- signal.
- the LOQ+ and LOQ- signals represent a differential quadrature signal.
- the output signals LOI+, LOI-, LOQ+, and LOQ- are provided to inputs of mixers 307 respectively.
- An example of transformer-based IQ generator 317 is shown in Figure 7.
- a load resister is coupled between each of the output ports (LOI+, LOI-, LOQ+, and LOQ-) and a bias voltage Vbias.
- mixer 307 is an IQ double balanced mixer, including a first mixer 801 and a second mixer 802.
- a mixer is a three port device that can perform a frequency conversion or modulation of a signal.
- a mixer down converts (or demodulates) an RF signal using an LO signal to generate an IF signal.
- mixers 307 includes two (or double) balanced Gilbert mixers 801 and 802. Double balanced mixers 801-802 down convert (or demodulate) a differential RF signal using differential LO signals to generate differential IF signals.
- mixer 801 receives a positive RF input signal RF+ and a negative RF input signal RF- representing a differential RF signal, for example, received from LNA 306.
- the input RF signals RF+ and RF- are mixed with differential in-phase LO signals (e.g., LOI+ and LOI- signals) to generate IFI+ and IFI- signals.
- the LOI+ and LOI- signals are generated by an mm- wave wideband IQ generation circuit, such as IQ generator 317 of Figure 4.
- mixer 802 receives RF+ and RF- signals and mix with differential quadrature LO signals (e.g., LOQ+ and LOQ- signals) generated by a mm- wave wideband IQ generation circuit, such as IQ generator 317 of Figure 4, to generate IFQ+ and IFQ- signals.
- differential quadrature LO signals e.g., LOQ+ and LOQ- signals
- each of mixers 801-802 can include one or more differential amplifier stages.
- the amplifier can include a common source differential amplifier as the first stage and a gate-coupled differential amplifier as the second stage.
- the common source differential amplifier stage of mixers 801-802 each can receive differential signals RF+ and RF-.
- the gate-coupled differential amplifier stage of mixer 801 receives differential in-phase signals LOI+ and LOI- .
- the gate-coupled differential amplifier stage of mixer 802 receives differential quadrature signals LOQ+ and LOQ-.
- the RF signal is then down converted by the LO signal to generate an IF signal.
- the second stage can include a low-pass filter which can be first order low-pass filters to minimize high frequency noise injections into mixers 801-802.
- the low-pass filter includes a passive low pass filter having a load resistor in parallel with a capacitor.
- the first stage different amplifier is coupled to the second stage differential amplifier via differential inductors.
- mixers 801-802 is co designed with a mm- wave IQ generation circuit such as mm-wave IQ generation circuit 317 of Figure 4 on a single monolithic integrated circuit.
- a differential inductor pair can be used to pick up a current gain between the two differential amplifier stages.
- Four inductors are included for better performance, e.g., two differential inductor pairs are used for each of the double IQ mixers.
- Four inductors include a large foot.
- FIG. 9 is a schematic diagram illustrating a co-design of T/R switch 309 and LNA 306 with impedance matching network to further improve the performance.
- LNA 306 is designed with different resonant loads in two stages to serve as a wideband frontend.
- separate shunt inductors are applied to the TX/RX inputs.
- the RX input shunt inductor LRX is further co-designed with L , L s , and C s of the first stage LNA, which creates a high- order network for wideband input marching.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transceivers (AREA)
- Superheterodyne Receivers (AREA)
- Amplifiers (AREA)
- Circuits Of Receivers In General (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
Abstract
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962836295P | 2019-04-19 | 2019-04-19 | |
US16/414,480 US10855317B2 (en) | 2018-04-05 | 2019-05-16 | Broadband receiver for multi-band millimeter-wave wireless communication |
PCT/US2020/028361 WO2020214733A1 (fr) | 2019-04-19 | 2020-04-15 | Récepteur à large bande pour communication sans fil à ondes millimétriques multibandes |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3956981A1 true EP3956981A1 (fr) | 2022-02-23 |
EP3956981A4 EP3956981A4 (fr) | 2023-01-18 |
Family
ID=72836924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20791902.8A Pending EP3956981A4 (fr) | 2019-04-19 | 2020-04-15 | Récepteur à large bande pour communication sans fil à ondes millimétriques multibandes |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP3956981A4 (fr) |
JP (1) | JP7441240B2 (fr) |
CN (1) | CN113491066B (fr) |
CA (1) | CA3137133A1 (fr) |
WO (1) | WO2020214733A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11677430B2 (en) | 2020-11-18 | 2023-06-13 | Swiftlink Technologies Inc. | Transformer-based current-reuse amplifier with embedded IQ generation for compact image rejection architecture in multi-band millimeter-wave 5G communication |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7130579B1 (en) * | 1999-10-21 | 2006-10-31 | Broadcom Corporation | Adaptive radio transceiver with a wide tuning range VCO |
US7130604B1 (en) * | 2002-06-06 | 2006-10-31 | National Semiconductor Corporation | Harmonic rejection mixer and method of operation |
US20050175130A1 (en) * | 2004-02-10 | 2005-08-11 | Tony Yang | Current mode image rejection mixer and method thereof |
US20060006921A1 (en) * | 2004-07-06 | 2006-01-12 | Tenbroek Bernard M | Mixer |
US7356317B2 (en) * | 2004-07-14 | 2008-04-08 | Silicon Storage Technology, Inc. | Adaptive-biased mixer |
JP4524460B2 (ja) * | 2005-12-27 | 2010-08-18 | ルネサスエレクトロニクス株式会社 | Rf通信用半導体集積回路 |
US20080280585A1 (en) * | 2007-05-10 | 2008-11-13 | Broadcom Corporation, A California Corporation | RF receiver front-end and applications thereof |
JP2010056605A (ja) * | 2008-08-26 | 2010-03-11 | Asahi Kasei Electronics Co Ltd | ミキサ回路、ミキサ回路の製造方法及び半導体集積回路 |
US8718574B2 (en) * | 2008-11-25 | 2014-05-06 | Qualcomm Incorporated | Duty cycle adjustment for a local oscillator signal |
CN102201789B (zh) * | 2010-07-14 | 2014-04-23 | 锐迪科科技有限公司 | Lnb下变频芯片电路及芯片、lnb下变频电路及方法 |
US9154356B2 (en) * | 2012-05-25 | 2015-10-06 | Qualcomm Incorporated | Low noise amplifiers for carrier aggregation |
US8787864B2 (en) * | 2012-11-30 | 2014-07-22 | Qualcomm Incorporated | Receiver IIP2 analog calibration |
WO2014136402A1 (fr) * | 2013-03-05 | 2014-09-12 | パナソニック株式会社 | Circuit mélangeur |
-
2020
- 2020-04-15 WO PCT/US2020/028361 patent/WO2020214733A1/fr active Application Filing
- 2020-04-15 CA CA3137133A patent/CA3137133A1/fr active Pending
- 2020-04-15 JP JP2021562321A patent/JP7441240B2/ja active Active
- 2020-04-15 EP EP20791902.8A patent/EP3956981A4/fr active Pending
- 2020-04-15 CN CN202080014809.3A patent/CN113491066B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP3956981A4 (fr) | 2023-01-18 |
CN113491066B (zh) | 2024-08-20 |
JP2022529195A (ja) | 2022-06-17 |
KR20210148351A (ko) | 2021-12-07 |
WO2020214733A1 (fr) | 2020-10-22 |
CA3137133A1 (fr) | 2020-10-22 |
JP7441240B2 (ja) | 2024-02-29 |
CN113491066A (zh) | 2021-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10855317B2 (en) | Broadband receiver for multi-band millimeter-wave wireless communication | |
US10707817B2 (en) | Wideband low noise amplifier (LNA) with a reconfigurable bandwidth for millimeter-wave 5G communication | |
US10411745B1 (en) | Broadband image-reject receiver for multi-band millimeter-wave 5G communication | |
US12034406B2 (en) | RF frequency multiplier without balun | |
US10840959B2 (en) | Compact broadband receiver for multi-band millimeter-wave 5G communication | |
CA3099144C (fr) | Co-conception avec adaptation large bande de commutateur d'emission/reception (tx/rx) et de circuit frontal de recepteur, relative a un recepteur mimo a large bande pour une commu nication 5g a ondes millimetriques | |
CN113491066B (zh) | 用于多频带毫米波无线通信的宽频带接收器 | |
KR102708133B1 (ko) | 다중-대역 밀리미터파 무선 통신을 위한 광대역 수신기 | |
CA3202096A1 (fr) | Amplificateur a reutilisation de courant base sur un transformateur avec generation iq integree pour une architecture compacte de rejet d'image dans les communications multi-bandes en ondes millimetriques 5g |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20211008 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20221219 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H03F 3/195 20060101ALI20221213BHEP Ipc: H03F 1/22 20060101ALI20221213BHEP Ipc: H03D 7/14 20060101ALI20221213BHEP Ipc: H03B 27/00 20060101ALI20221213BHEP Ipc: H03F 3/193 20060101ALI20221213BHEP Ipc: H03D 7/18 20060101ALI20221213BHEP Ipc: H03D 7/16 20060101AFI20221213BHEP |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SWIFTLINK TECHNOLOGIES INC. |