CA3137133A1 - Recepteur a large bande pour communication sans fil a ondes millimetriques multibandes - Google Patents

Recepteur a large bande pour communication sans fil a ondes millimetriques multibandes Download PDF

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Publication number
CA3137133A1
CA3137133A1 CA3137133A CA3137133A CA3137133A1 CA 3137133 A1 CA3137133 A1 CA 3137133A1 CA 3137133 A CA3137133 A CA 3137133A CA 3137133 A CA3137133 A CA 3137133A CA 3137133 A1 CA3137133 A1 CA 3137133A1
Authority
CA
Canada
Prior art keywords
signal
loq
differential
signals
loi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CA3137133A
Other languages
English (en)
Inventor
Min-yu HUANG
Thomas Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Swiftlink Technologies Inc
Original Assignee
Swiftlink Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/414,480 external-priority patent/US10855317B2/en
Application filed by Swiftlink Technologies Co Ltd filed Critical Swiftlink Technologies Co Ltd
Publication of CA3137133A1 publication Critical patent/CA3137133A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/16—Multiple-frequency-changing
    • H03D7/165—Multiple-frequency-changing at least two frequency changers being located in different paths, e.g. in two paths with carriers in quadrature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B27/00—Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1483—Balanced arrangements with transistors comprising components for selecting a particular frequency component of the output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/18—Modifications of frequency-changers for eliminating image frequencies
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001—Circuit elements of demodulators
    • H03D2200/0019—Gilbert multipliers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041—Functional aspects of demodulators
    • H03D2200/0043—Bias and operating point
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transceivers (AREA)
  • Superheterodyne Receivers (AREA)
  • Amplifiers (AREA)
  • Circuits Of Receivers In General (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)

Abstract

La présente invention concerne un récepteur RF qui comprend un amplificateur à faible bruit (LNA) pour recevoir et amplifier des signaux RF, un circuit générateur IQ à base de transformateur, une ou plusieurs résistances de charge, un ou plusieurs circuits mélangeurs, et un convertisseur abaisseur de fréquence. Le générateur IQ à base de transformateur est destiné à générer un signal d'oscillateur local (LOI) différentiel en phase et un signal en quadrature différentiel (LOQ) sur la base d'un signal d'oscillateur local (LO) reçu en provenance d'un LO. Les résistances de charge sont couplées à une sortie du générateur IQ à base de transformateur. Chacune des résistances de charge est destinée à coupler l'un des signaux LOI et LOQ différentiels à une tension de polarisation prédéterminée. Les mélangeurs sont couplés au LNA et au générateur IQ à base de transformateur pour recevoir et mélanger les signaux RF amplifiés par le LNA avec les signaux LOI et LOQ différentiels pour générer un signal RF en phase (RFI) et un signal RF en quadrature (RFQ). Le convertisseur abaisseur de fréquence est destiné à convertir et abaisser le signal RFI et le signal RFQ en signaux IF.
CA3137133A 2019-04-19 2020-04-15 Recepteur a large bande pour communication sans fil a ondes millimetriques multibandes Pending CA3137133A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962836295P 2019-04-19 2019-04-19
US62/836,295 2019-04-19
US16/414,480 2019-05-16
US16/414,480 US10855317B2 (en) 2018-04-05 2019-05-16 Broadband receiver for multi-band millimeter-wave wireless communication
PCT/US2020/028361 WO2020214733A1 (fr) 2019-04-19 2020-04-15 Récepteur à large bande pour communication sans fil à ondes millimétriques multibandes

Publications (1)

Publication Number Publication Date
CA3137133A1 true CA3137133A1 (fr) 2020-10-22

Family

ID=72836924

Family Applications (1)

Application Number Title Priority Date Filing Date
CA3137133A Pending CA3137133A1 (fr) 2019-04-19 2020-04-15 Recepteur a large bande pour communication sans fil a ondes millimetriques multibandes

Country Status (5)

Country Link
EP (1) EP3956981A4 (fr)
JP (1) JP7441240B2 (fr)
CN (1) CN113491066B (fr)
CA (1) CA3137133A1 (fr)
WO (1) WO2020214733A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11677430B2 (en) 2020-11-18 2023-06-13 Swiftlink Technologies Inc. Transformer-based current-reuse amplifier with embedded IQ generation for compact image rejection architecture in multi-band millimeter-wave 5G communication

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7130579B1 (en) * 1999-10-21 2006-10-31 Broadcom Corporation Adaptive radio transceiver with a wide tuning range VCO
US7130604B1 (en) * 2002-06-06 2006-10-31 National Semiconductor Corporation Harmonic rejection mixer and method of operation
US20050175130A1 (en) * 2004-02-10 2005-08-11 Tony Yang Current mode image rejection mixer and method thereof
US20060006921A1 (en) * 2004-07-06 2006-01-12 Tenbroek Bernard M Mixer
US7356317B2 (en) * 2004-07-14 2008-04-08 Silicon Storage Technology, Inc. Adaptive-biased mixer
JP4524460B2 (ja) * 2005-12-27 2010-08-18 ルネサスエレクトロニクス株式会社 Ｒｆ通信用半導体集積回路
US20080280585A1 (en) * 2007-05-10 2008-11-13 Broadcom Corporation, A California Corporation RF receiver front-end and applications thereof
JP2010056605A (ja) * 2008-08-26 2010-03-11 Asahi Kasei Electronics Co Ltd ミキサ回路、ミキサ回路の製造方法及び半導体集積回路
US8718574B2 (en) * 2008-11-25 2014-05-06 Qualcomm Incorporated Duty cycle adjustment for a local oscillator signal
CN102201789B (zh) * 2010-07-14 2014-04-23 锐迪科科技有限公司 Lnb下变频芯片电路及芯片、lnb下变频电路及方法
US9154356B2 (en) * 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US8787864B2 (en) * 2012-11-30 2014-07-22 Qualcomm Incorporated Receiver IIP2 analog calibration
WO2014136402A1 (fr) * 2013-03-05 2014-09-12 パナソニック株式会社 Circuit mélangeur

Also Published As

Publication number Publication date
EP3956981A4 (fr) 2023-01-18
CN113491066B (zh) 2024-08-20
JP2022529195A (ja) 2022-06-17
KR20210148351A (ko) 2021-12-07
WO2020214733A1 (fr) 2020-10-22
EP3956981A1 (fr) 2022-02-23
JP7441240B2 (ja) 2024-02-29
CN113491066A (zh) 2021-10-08

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