EP3949123A1 - Dispositif de protection pour un circuit d'attaque et procédé de protection d'un circuit d'attaque - Google Patents

Dispositif de protection pour un circuit d'attaque et procédé de protection d'un circuit d'attaque

Info

Publication number
EP3949123A1
EP3949123A1 EP20712533.7A EP20712533A EP3949123A1 EP 3949123 A1 EP3949123 A1 EP 3949123A1 EP 20712533 A EP20712533 A EP 20712533A EP 3949123 A1 EP3949123 A1 EP 3949123A1
Authority
EP
European Patent Office
Prior art keywords
driver circuit
semiconductor switch
voltage drop
series resistor
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20712533.7A
Other languages
German (de)
English (en)
Inventor
Tim Bruckhaus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP3949123A1 publication Critical patent/EP3949123A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/24—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to undervoltage or no-voltage

Definitions

  • Protection device for a driver circuit and method for protecting a
  • the present invention relates to a protection device for a
  • Driver circuit for controlling a semiconductor switch and a method for protecting a driver circuit for controlling a semiconductor switch.
  • the present invention also relates to a control device for a
  • Electric drive systems such as are used, for example, in fully or partially electrically driven vehicles, generally comprise an electric machine that is fed by a power converter.
  • the converter usually includes several half bridges
  • Power semiconductor switches These power semiconductor switches are controlled via a driver circuit which amplifies the control signals in order to provide sufficient electrical power for controlling the power semiconductor switches.
  • the document DE 10 2015 217 175 A1 discloses a control circuit for an inverter of a vehicle.
  • the inverter is designed to convert a DC voltage from an electrical energy store into a
  • the control circuit comprises a driver unit which generates inverter control signals for the switching elements of the inverter.
  • a short circuit can occur between the control connection of the power semiconductor switch and a further output of the power semiconductor switch. Such a short circuit can damage an output of a driver stage for the
  • the present invention discloses a protection device for a
  • Driver circuit for controlling a semiconductor switch as well as a method for protecting a driver circuit for controlling a semiconductor switch with the features of the independent claims. More beneficial
  • Embodiments are the subject of the dependent claims.
  • the driver circuit is by means of an electrical
  • the protective device is designed to detect a voltage drop across the series resistor of the driver circuit.
  • the protection device is also designed to deactivate the driver circuit when a predetermined characteristic has been detected in the detected voltage drop.
  • the driver circuit can be deactivated when the detected voltage drop exceeds a predetermined value for at least a predetermined period of time.
  • the method includes a step of detecting a
  • the driver circuit is deactivated when the detected voltage drop exceeds a predetermined threshold value for at least a predetermined period of time.
  • the present invention is based on the knowledge that in the event of a fault, in particular in the case of a breakdown, a
  • Control connection and another connection of the power semiconductor switch can come.
  • a driver circuit which feeds the control input of the power semiconductor switch can be very heavily loaded, that is, a relatively high electrical current can flow.
  • This heavy load on the output of the driver circuit can possibly lead to further damage within the driver stage or also further components. As a result, there is the risk that a fault in a power semiconductor switch will lead to further damage to the driver circuit.
  • a defective power semiconductor switch is detected early and the affected driver stage is then deactivated for this semiconductor switch, it may be possible to prevent the error from spreading to other components.
  • This enables, for example, an electrical system in the event of a fault in a safe operating state, for example an active one Short circuit or the like. In this way, the safety of an electric drive system can be increased.
  • the protection device comprises a low-pass filter.
  • the low-pass filter is designed to filter the detected voltage drop across the series resistor.
  • the low-pass filter can be designed to filter higher-frequency components in the detected voltage drop. The usual switching operations during control of the
  • the protective device comprises a
  • the comparison device is designed to compare a value of the detected voltage drop across the series resistor with a predetermined threshold value. If the detected voltage drop across the series resistor, in particular the smoothed or low-pass filtered voltage drop across the series resistor, exceeds a predetermined threshold value, this can be interpreted as an indication that the output of the driver circuit for the semiconductor switch is heavily loaded over a longer period of time. This usually only occurs in the event of an error.
  • the predetermined threshold value is
  • Threshold value of the comparison device as a function of a
  • Supply voltage of the driver circuit can be adjusted. Will the Driver circuit provides more than one voltage, so the
  • Threshold value as a function of at least one of the several
  • Supply voltages can be adjusted.
  • Threshold values for the detection of a fault can also fluctuate in the framework conditions, such as a fluctuating one
  • the protective device comprises a
  • the memory device is designed to transition from a first state to a second state when the
  • Comparison device has detected that the voltage drop has exceeded the predetermined threshold value.
  • the predetermined threshold value In particular, the
  • Storage device retain the second state even if the voltage drop across the series resistor falls below the predetermined threshold value again. In this way, a permanent shutdown of the driver circuit after the detection of an error can be guaranteed.
  • the memory device can be a bistable multivibrator, such as a flip-flop or the like.
  • the memory device can be reset by applying a suitable reset signal, that is to say transferred to the first state.
  • the driver circuit can be activated for driving the semiconductor switch.
  • control device for a semiconductor switch with a driver circuit and a protective device is provided.
  • the driver circuit is designed to be connected to a control input of the
  • Semiconductor switch to provide a control signal.
  • each Driver circuit is designed to at least one of the plurality
  • the inverter arrangement there is a separate one for each semiconductor switch of the plurality of semiconductor switches
  • Figure 1 a schematic representation of a control device for a
  • Figure 2 a schematic representation of a control device for a
  • FIG. 3 a schematic representation of an inverter arrangement according to an embodiment
  • Figure 4 a flow chart of how a method for protecting a
  • Driver circuit is based.
  • FIG. 1 shows a schematic representation of a block diagram of a
  • Control device for controlling a semiconductor switch 3 comprises a driver circuit 2 and a protection device 1 for the
  • Control signal are provided, which is processed by the driver circuit 2 in order to provide a control signal at the output A of the driver circuit 2 which has a sufficient voltage level and power to drive a control terminal of the semiconductor switch 3.
  • the input signal of the driver circuit 2 can be received and processed by a circuit 23, for example a gate driver IC or the like.
  • the signal can then be amplified by an amplifier circuit 22 and provided at output A via a series resistor 21.
  • the output A of the driver circuit 2 is electrically coupled to the control connection of the semiconductor switch 3, so that the signal provided at the output A can control the semiconductor switch 3.
  • a short circuit can also occur between the control connection of the semiconductor switch 3 and a further connection of the semiconductor switch 3. This short circuit can lead to the fact that a larger current can flow from the output connection A of the driver circuit 2 in the direction of the semiconductor switch 3 for a longer period of time. This high current flow also leads to a corresponding voltage drop across the series resistor 21.
  • the protective device 1 for the driver circuit 2 is coupled to the driver circuit 2 in such a way that the protective device 1 can detect a voltage drop across the series resistor 21.
  • a fault in the semiconductor switch 3 leads to a longer current flow and, associated therewith, also to a voltage drop across the series resistor 21, which lasts for a longer time.
  • Such a voltage drop, which lasts longer than a predetermined period of time, can be detected by the protective device 1.
  • the protective device 1 can then deactivate the driver circuit 2. For example, the protective device 1 on the
  • Driver circuit 2 provide a control signal which activates or deactivates driver circuit 2.
  • the driver circuit 2 can only be activated as long as an active release signal is present from the protective device 1. If this active release signal is switched off, the driver circuit 2 is then also deactivated. Conversely, it is of course also possible for the protective device 1 to output an active signal for deactivating the driver circuit 2.
  • the normal control pulses for driving the semiconductor switch 2 cause only relatively brief voltage drops across the series resistor 21 during normal operation. In the event of a fault, however, a voltage drop across the series resistor 21 can be detected for a longer period of time.
  • a low-pass filter 11 can be provided in the protective device 1 for the driver circuit 2, which filters a signal corresponding to the voltage drop across the series resistor 21. In this way, higher-frequency signal components can be eliminated or at least minimized, so that only the low-frequency component of the voltage drop across the series resistor 21 is evaluated for further evaluation. Any desired low-pass filter, for example an R-C element or the like, can be used for the low-pass filtering.
  • the correspondingly processed signal can then be fed to a comparison device 12, which compares the detected voltage drop across the series resistor 21 with a predetermined threshold value. If the detected voltage drop across the series resistor 21 exceeds the predetermined threshold value, this can be interpreted as an indication that an error has occurred in the semiconductor switch 3. If necessary, the specified threshold value with which the
  • Comparison device 12 compares the voltage drop across the series resistor 21. For example, the threshold for the
  • Comparison can be adapted as a function of a supply voltage of the driver circuit 2.
  • Electric currents from the driver circuit 2 to the control terminal of the semiconductor switch 3 vary depending on the level of
  • An output of the comparison device 12 can be coupled to a storage device 13.
  • the storage device 13 can, for example, change from a first state to a second state when the
  • Comparison device 12 detects that the voltage drop across the series resistor 21 exceeds the predetermined threshold value.
  • the memory device 13 can also remain in the second state, even if the voltage drop across the series resistor 21 falls again below the predetermined threshold value. In this way, the
  • the memory device 13 After a fault has been detected, that is, the voltage drop across the series resistor 21 has been exceeded for a predefined period of time, the memory device 13 detects a fault and provides a switch-off signal for deactivating the driver circuit 2. This switch-off signal should be maintained permanently after an error has been detected.
  • a flip-flop or the like can be used for this purpose.
  • the memory device 13 can be reset by means of a reset signal (reset).
  • Figure 2 shows a schematic representation of a block diagram of a
  • the control device according to FIG. 2 differs from the control device described above in particular in that the driver IC 23 of the driver circuit 2 splits the control signal into two signals.
  • the corresponding signal paths are indicated by the letters a and b marked.
  • the upper path a can, for example, carry a positive output current. In this case, the path b is then high-resistance.
  • the lower path b can carry a negative output current. In this case, the path a is then high-resistance. In this way, separate control signals for opening and closing the semiconductor switch 3 are generated.
  • the control device for controlling the semiconductor switch 3, and in particular the protective device 1 corresponds to the previously described embodiment according to FIG.
  • FIG. 3 shows a schematic illustration of an inverter arrangement according to one embodiment.
  • the inverter arrangement can
  • a protective device 1 according to one of the previously described embodiments can be provided for each driver circuit 2. In this way, individual protection can be provided for the driver circuits 2 of the semiconductor switch 3. Especially when in one of the
  • Semiconductor switch 3 a fault, in particular a short circuit between
  • the inverter circuit is provided, for example, to control an electrical machine, in the event of a fault in one of the semiconductor switches 3, the
  • Inverter arrangement can be transferred to a safe operating state.
  • such a safe operating state can be an active short circuit in which all upper or lower
  • Semiconductor switches are closed at the same time. If, for example, a fault occurs in one of the lower semiconductor switches 3 and a short circuit associated therewith occurs in the corresponding semiconductor switch 3, the remaining two lower semiconductor switches can also be closed. The three upper semiconductor switches 3 are all opened. Analog can also be used for a Short circuit of one of the upper semiconductor switches 3 can be proceeded. By deactivating the driver circuit of a defective semiconductor switch 3, it is still possible to safely control the remaining semiconductor switches 3.
  • FIG. 4 shows a schematic representation of a flowchart on the basis of a method for protecting a driver circuit for controlling a semiconductor switch according to one embodiment. The method can in particular be applied to a driver circuit 2 for controlling a
  • step S1 a voltage drop across the series resistor 21 of the driver circuit 2 is detected.
  • step S2 the driver circuit 2 is deactivated when a predetermined characteristic has been detected in the detected voltage drop.
  • the predetermined characteristic can be, for example, the voltage drop being exceeded over a
  • the voltage drop can be filtered by means of a low-pass filter and the filtered voltage drop can be compared with a threshold value.
  • the control of the semiconductor switch can be deactivated. This deactivation can also be maintained if the detected voltage drop falls below the specified threshold value again.
  • the present invention relates to the protection of a
  • Driver circuit for controlling a semiconductor switch For this purpose, a voltage drop in a series resistor between the driver circuit and a control connection of the semiconductor switch is evaluated. If the voltage drop across the series resistor exceeds a predetermined threshold value and this threshold value is exceeded for at least a predetermined period of time, the driver circuit for the semiconductor switch is then deactivated.

Landscapes

  • Protection Of Static Devices (AREA)
  • Power Conversion In General (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

La présente invention concerne la protection d'un circuit d'attaque permettant de commander un commutateur semi-conducteur. À cet effet, une chute de tension dans une résistance série entre le circuit d'attaque et une borne de commande du commutateur semi-conducteur est évaluée. Si la chute de tension concernant la résistance série dépasse une valeur de seuil prédéfinie, et si cette valeur de seuil est dépassée pendant au moins une durée prédéterminée, le circuit d'attaque est désactivé pour le commutateur semi-conducteur.
EP20712533.7A 2019-03-29 2020-03-18 Dispositif de protection pour un circuit d'attaque et procédé de protection d'un circuit d'attaque Pending EP3949123A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019204429.8A DE102019204429A1 (de) 2019-03-29 2019-03-29 Schutzvorrichtung für eine Treiberschaltung und Verfahren zum Schutz einer Treiberschaltung
PCT/EP2020/057374 WO2020200780A1 (fr) 2019-03-29 2020-03-18 Dispositif de protection pour un circuit d'attaque et procédé de protection d'un circuit d'attaque

Publications (1)

Publication Number Publication Date
EP3949123A1 true EP3949123A1 (fr) 2022-02-09

Family

ID=69846468

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20712533.7A Pending EP3949123A1 (fr) 2019-03-29 2020-03-18 Dispositif de protection pour un circuit d'attaque et procédé de protection d'un circuit d'attaque

Country Status (5)

Country Link
US (1) US20220360070A1 (fr)
EP (1) EP3949123A1 (fr)
CN (1) CN113597740A (fr)
DE (1) DE102019204429A1 (fr)
WO (1) WO2020200780A1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299991A (ja) * 1991-06-06 1993-11-12 Nec Corp モノリシックパワーｍｏｓ集積回路
AU2008201337A1 (en) * 2001-07-06 2008-04-17 Lutron Electronics Company, Inc Electronic control systems and methods
JP3931627B2 (ja) * 2001-11-01 2007-06-20 株式会社日立製作所 半導体スイッチング素子のゲート駆動装置
US6597553B2 (en) * 2001-12-18 2003-07-22 Honeywell International Inc. Short circuit protection for a high or low side driver with low impact to driver performance
CN104521122A (zh) * 2012-08-08 2015-04-15 夏普株式会社 逆变驱动电路
DE102013107088A1 (de) * 2013-07-05 2015-01-08 Endress + Hauser Gmbh + Co. Kg Schaltungsanordnung zum Schutz von mindestens einem Bauteil eines Zweidrahtstromkreises
WO2015033449A1 (fr) * 2013-09-06 2015-03-12 三菱電機株式会社 Dispositif à semi-conducteurs et dispositif de commande d'élément de commutation à semi-conducteurs
US10700678B2 (en) * 2015-06-16 2020-06-30 Mitsubishi Electric Corporation Drive control circuit for power semiconductor element
DE102015217175A1 (de) 2015-09-09 2017-03-09 Bayerische Motoren Werke Aktiengesellschaft Ansteuerschaltung für einen Wechselrichter eines Fahrzeugs
WO2019008817A1 (fr) * 2017-07-03 2019-01-10 三菱電機株式会社 Circuit de protection contre les courts-circuits pour élément de commutation semi-conducteur

Also Published As

Publication number Publication date
WO2020200780A1 (fr) 2020-10-08
CN113597740A (zh) 2021-11-02
US20220360070A1 (en) 2022-11-10
DE102019204429A1 (de) 2020-10-01

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