EP3933358A4 - Infrared sensor, infrared sensor array, and infrared sensor manufacturing method - Google Patents

Infrared sensor, infrared sensor array, and infrared sensor manufacturing method Download PDF

Info

Publication number
EP3933358A4
EP3933358A4 EP19917458.2A EP19917458A EP3933358A4 EP 3933358 A4 EP3933358 A4 EP 3933358A4 EP 19917458 A EP19917458 A EP 19917458A EP 3933358 A4 EP3933358 A4 EP 3933358A4
Authority
EP
European Patent Office
Prior art keywords
infrared sensor
manufacturing
array
sensor array
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19917458.2A
Other languages
German (de)
French (fr)
Other versions
EP3933358A1 (en
EP3933358B1 (en
Inventor
Kouhei Takahashi
Naoki Tambo
Kunihiko Nakamura
Masaki Fujikane
Yasuyuki Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of EP3933358A1 publication Critical patent/EP3933358A1/en
Publication of EP3933358A4 publication Critical patent/EP3933358A4/en
Application granted granted Critical
Publication of EP3933358B1 publication Critical patent/EP3933358B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J2005/202—Arrays
    • G01J2005/204—Arrays prepared by semiconductor processing, e.g. VLSI
EP19917458.2A 2019-02-28 2019-09-24 Infrared sensor, infrared sensor array, and infrared sensor manufacturing method Active EP3933358B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019035359 2019-02-28
PCT/JP2019/037204 WO2020174731A1 (en) 2019-02-28 2019-09-24 Infrared sensor, infrared sensor array, and infrared sensor manufacturing method

Publications (3)

Publication Number Publication Date
EP3933358A1 EP3933358A1 (en) 2022-01-05
EP3933358A4 true EP3933358A4 (en) 2022-05-11
EP3933358B1 EP3933358B1 (en) 2023-11-01

Family

ID=72240209

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19917458.2A Active EP3933358B1 (en) 2019-02-28 2019-09-24 Infrared sensor, infrared sensor array, and infrared sensor manufacturing method

Country Status (5)

Country Link
US (1) US11906363B2 (en)
EP (1) EP3933358B1 (en)
JP (1) JPWO2020174731A1 (en)
CN (1) CN113015889B (en)
WO (1) WO2020174731A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022102826A (en) * 2020-12-25 2022-07-07 パナソニックＩｐマネジメント株式会社 Solid material
JP2022102827A (en) * 2020-12-25 2022-07-07 パナソニックＩｐマネジメント株式会社 Infrared sensor
JPWO2022239610A1 (en) * 2021-05-11 2022-11-17
EP4339568A1 (en) * 2021-05-11 2024-03-20 Panasonic Intellectual Property Management Co., Ltd. Infrared sensor, and method for manufacturing infrared sensor
KR20230001989A (en) * 2021-06-29 2023-01-05 삼성전자주식회사 Sensor for sensing heat or infrared light and electronic device including same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030178565A1 (en) * 2002-03-22 2003-09-25 Kabushiki Kaisha Toshiba Thermal type infrared ray imaging device and fabrication method thereof
EP1596427A1 (en) * 2003-02-19 2005-11-16 Matsushita Electric Industrial Co., Ltd. Method for introducing impurities
JP2008082790A (en) * 2006-09-26 2008-04-10 Matsushita Electric Works Ltd Infrared sensor
US20140226021A1 (en) * 2011-07-15 2014-08-14 Centre National De La Recherche Scientifique-Cnrs Microbolometer array with improved performance
US20160069739A1 (en) * 2014-09-04 2016-03-10 Newport Fab, Llc Dba Jazz Semiconductor Light Sensor with Chemically Resistant and Robust Reflector Stack
JP2017223644A (en) * 2016-06-13 2017-12-21 パナソニックＩｐマネジメント株式会社 Infrared sensor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2505848B2 (en) * 1988-02-29 1996-06-12 日本電信電話株式会社 Photoconductive image sensor
EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
JP4899715B2 (en) * 2005-08-17 2012-03-21 パナソニック電工株式会社 Infrared sensor unit manufacturing method
DE602006020588D1 (en) 2005-08-17 2011-04-21 Panasonic Elec Works Co Ltd INFRARED SENSOR AND MANUFACTURING METHOD THEREFOR
EP2072976A4 (en) * 2006-10-11 2013-08-14 Panasonic Corp Electronic device
KR101183972B1 (en) * 2008-12-16 2012-09-19 한국전자통신연구원 bolometer structure with complemental absorption layer, pixel for IR detector using this and method for fabricating the same
JP5259430B2 (en) * 2009-01-06 2013-08-07 浜松ホトニクス株式会社 Photodetector
JP5300102B2 (en) 2009-09-03 2013-09-25 独立行政法人産業技術総合研究所 Bolometer resistor film
WO2013145052A1 (en) 2012-03-28 2013-10-03 日本電気株式会社 Thermistor element
US9417465B2 (en) 2013-04-07 2016-08-16 The Regents Of The University Of Colorado, A Body Corporate Nanophononic metamaterials
CN108036013B (en) * 2017-11-08 2019-06-28 江苏大学 A kind of adjustable three-dimensional phonon crystal intelligent shock-isolation device of band gap

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030178565A1 (en) * 2002-03-22 2003-09-25 Kabushiki Kaisha Toshiba Thermal type infrared ray imaging device and fabrication method thereof
EP1596427A1 (en) * 2003-02-19 2005-11-16 Matsushita Electric Industrial Co., Ltd. Method for introducing impurities
JP2008082790A (en) * 2006-09-26 2008-04-10 Matsushita Electric Works Ltd Infrared sensor
US20140226021A1 (en) * 2011-07-15 2014-08-14 Centre National De La Recherche Scientifique-Cnrs Microbolometer array with improved performance
US20160069739A1 (en) * 2014-09-04 2016-03-10 Newport Fab, Llc Dba Jazz Semiconductor Light Sensor with Chemically Resistant and Robust Reflector Stack
JP2017223644A (en) * 2016-06-13 2017-12-21 パナソニックＩｐマネジメント株式会社 Infrared sensor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHAO C H ET AL: "Boron induced recrystallization of amorphous silicon film by a rapid thermal process", THIN SOLID FILMS, ELSEVIER, AMSTERDAM, NL, vol. 518, no. 24, 1 October 2010 (2010-10-01), pages 7480 - 7482, XP027288419, ISSN: 0040-6090, [retrieved on 20100915] *

Also Published As

Publication number Publication date
WO2020174731A1 (en) 2020-09-03
EP3933358A1 (en) 2022-01-05
EP3933358B1 (en) 2023-11-01
JPWO2020174731A1 (en) 2021-12-23
US11906363B2 (en) 2024-02-20
CN113015889B (en) 2024-04-02
US20210302237A1 (en) 2021-09-30
CN113015889A (en) 2021-06-22

Similar Documents

Publication Publication Date Title
EP3933358A4 (en) Infrared sensor, infrared sensor array, and infrared sensor manufacturing method
EP3896746A4 (en) Single-photon avalanche diode and manufacturing method, detector array, and image sensor
EP3553481A4 (en) Temperature sensor, sensor element, and method for manufacturing temperature sensor
EP3756974A4 (en) Capacitance sensor, method for manufacturing same, and reticulated soft electrode for capacitance sensor
EP3722766A4 (en) Fabry-perot sensor and method for manufacturing same
EP3933357A4 (en) Infrared sensor and infrared sensor array
EP3444842A4 (en) Array substrate, manufacturing method therefor, sensor, and detection device
EP3734347A4 (en) Optical element, microlens array, and method for producing optical element
EP3671155A4 (en) Surface stress sensor, hollow structural element, and method for manufacturing same
EP3608661A4 (en) Single-cantilever gas sensor, sensor array, and method for preparing sensor
EP3859802A4 (en) Piezoelectric device, and piezoelectric device manufacturing method
EP3901097A4 (en) Piezoelectric laminate, piezoelectric element, and piezoelectric laminate manufacturing method
EP3848926A4 (en) Sound-blocking sheet member, sound-blocking structure using same, and method for manufacturing sound-blocking sheet member
EP3758073A4 (en) Radiation detection element, and method for manufacturing same
EP3993403A4 (en) Sensor control device, sensor control method, and program
EP4019919A4 (en) Metamaterial temperature-sensing sensor, preparation method, and application thereof
EP3584838A4 (en) Array substrate, and manufacturing method thereof
EP3933872A4 (en) Photoelectric sensor and method for manufacturing same
EP3996150A4 (en) Perovskite photoelectric element and method for manufacturing same
EP3754637A4 (en) Pixel unit, manufacturing method thereof, and array substrate
EP3816340A4 (en) Sheet-shaped item and manufacturing method therefor
EP3712966A4 (en) Method for manufacturing curved-surface detector, and curved-surface detector manufactured using the manufacturing method
EP3779420B8 (en) Sensor, detecting method, and sensor manufacturing method
EP3842775A4 (en) Temperature sensor, temperature sensor element, and method for manufacturing temperature sensor
EP3925010A4 (en) Radiation sensor element and method

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20210628

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

A4 Supplementary search report drawn up and despatched

Effective date: 20220412

RIC1 Information provided on ipc code assigned before grant

Ipc: G01J 5/20 20060101ALI20220406BHEP

Ipc: G01J 5/04 20060101ALI20220406BHEP

Ipc: G01J 5/02 20220101ALI20220406BHEP

Ipc: H01L 37/00 20060101ALI20220406BHEP

Ipc: H01L 27/144 20060101AFI20220406BHEP

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
REG Reference to a national code

Ref document number: 602019040863

Country of ref document: DE

Ref country code: DE

Ref legal event code: R079

Free format text: PREVIOUS MAIN CLASS: G01J0001020000

Ipc: H01L0027144000

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H10N 15/00 20230101ALI20230426BHEP

Ipc: G01J 5/02 20220101ALI20230426BHEP

Ipc: G01J 5/04 20060101ALI20230426BHEP

Ipc: G01J 5/20 20060101ALI20230426BHEP

Ipc: H01L 27/144 20060101AFI20230426BHEP

INTG Intention to grant announced

Effective date: 20230515

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602019040863

Country of ref document: DE

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG9D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20231101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20240202

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20240301

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20231101

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1628227

Country of ref document: AT

Kind code of ref document: T

Effective date: 20231101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20231101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20231101