EP3671155A4 - Surface stress sensor, hollow structural element, and method for manufacturing same - Google Patents

Surface stress sensor, hollow structural element, and method for manufacturing same Download PDF

Info

Publication number
EP3671155A4
EP3671155A4 EP18859370.1A EP18859370A EP3671155A4 EP 3671155 A4 EP3671155 A4 EP 3671155A4 EP 18859370 A EP18859370 A EP 18859370A EP 3671155 A4 EP3671155 A4 EP 3671155A4
Authority
EP
European Patent Office
Prior art keywords
structural element
manufacturing same
stress sensor
surface stress
hollow structural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP18859370.1A
Other languages
German (de)
French (fr)
Other versions
EP3671155A1 (en
EP3671155B1 (en
Inventor
Takanori Murakami
Hidenori Mochizuki
Daiki HIRASHIMA
Seiichi Kato
Kazuma Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017246442A external-priority patent/JP6963494B2/en
Application filed by Asahi Kasei Corp, Asahi Chemical Industry Co Ltd filed Critical Asahi Kasei Corp
Priority to EP21195507.5A priority Critical patent/EP3974794A1/en
Priority claimed from PCT/JP2018/034938 external-priority patent/WO2019059326A1/en
Publication of EP3671155A1 publication Critical patent/EP3671155A1/en
Publication of EP3671155A4 publication Critical patent/EP3671155A4/en
Application granted granted Critical
Publication of EP3671155B1 publication Critical patent/EP3671155B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M5/00—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings
    • G01M5/0041—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings by determining deflection or stress
    • G01M5/005—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings by determining deflection or stress by means of external apparatus, e.g. test benches or portable test systems
    • G01M5/0058—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings by determining deflection or stress by means of external apparatus, e.g. test benches or portable test systems of elongated objects, e.g. pipes, masts, towers or railways
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0214—Biosensors; Chemical sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
EP18859370.1A 2017-09-20 2018-09-20 Surface stress sensor, hollow structural element, and method for manufacturing same Active EP3671155B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP21195507.5A EP3974794A1 (en) 2017-09-20 2018-09-20 Surface stress sensor with protrusions or recesses pattern

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017180132 2017-09-20
JP2017246442A JP6963494B2 (en) 2017-12-22 2017-12-22 Hollow structure element and its manufacturing method
JP2018047234 2018-03-14
PCT/JP2018/034938 WO2019059326A1 (en) 2017-09-20 2018-09-20 Surface stress sensor, hollow structural element, and method for manufacturing same

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP21195507.5A Division EP3974794A1 (en) 2017-09-20 2018-09-20 Surface stress sensor with protrusions or recesses pattern
EP21195507.5A Division-Into EP3974794A1 (en) 2017-09-20 2018-09-20 Surface stress sensor with protrusions or recesses pattern

Publications (3)

Publication Number Publication Date
EP3671155A1 EP3671155A1 (en) 2020-06-24
EP3671155A4 true EP3671155A4 (en) 2020-08-19
EP3671155B1 EP3671155B1 (en) 2021-10-20

Family

ID=70419896

Family Applications (2)

Application Number Title Priority Date Filing Date
EP18859370.1A Active EP3671155B1 (en) 2017-09-20 2018-09-20 Surface stress sensor, hollow structural element, and method for manufacturing same
EP21195507.5A Pending EP3974794A1 (en) 2017-09-20 2018-09-20 Surface stress sensor with protrusions or recesses pattern

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP21195507.5A Pending EP3974794A1 (en) 2017-09-20 2018-09-20 Surface stress sensor with protrusions or recesses pattern

Country Status (3)

Country Link
US (1) US11573137B2 (en)
EP (2) EP3671155B1 (en)
CN (1) CN111108357B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019059326A1 (en) * 2017-09-20 2019-03-28 旭化成株式会社 Surface stress sensor, hollow structural element, and method for manufacturing same
US10664842B1 (en) * 2018-11-26 2020-05-26 Capital One Services, Llc Systems for detecting biometric response to attempts at coercion
JP7078304B2 (en) * 2019-03-06 2022-05-31 国立研究開発法人物質・材料研究機構 Hydrogen sensor and hydrogen detection method
CN111982362B (en) * 2020-08-25 2022-12-20 工科思维技术(深圳)有限公司 Method for preparing high-sensitivity flexible piezoresistive sensor based on fracture microstructure
CN115287589B (en) * 2022-01-12 2024-01-30 青岛大学 Preparation method and application of gas sensor based on curled silicon nano film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070023851A1 (en) * 2002-04-23 2007-02-01 Hartzell John W MEMS pixel sensor
JP2009229450A (en) * 2008-02-27 2009-10-08 Kyocera Corp Acceleration sensor device and method for manufacturing acceleration sensor device
EP2579010A1 (en) * 2010-05-24 2013-04-10 National Institute for Materials Science Surface stress sensor
US20140352447A1 (en) * 2012-04-17 2014-12-04 National Institute For Materials Science Double-side-coated surface stress sensor
CN104236766B (en) * 2013-06-13 2016-09-14 中国科学院上海微系统与信息技术研究所 Encapsulation stress floats self-compensating dual suspension formula force-sensing sensor chip and preparation method with temperature

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434203A (en) * 1980-10-27 1984-02-28 Setra Systems, Inc. Diaphragm
JPS63196080A (en) 1987-02-09 1988-08-15 Nec Corp Semiconductor force sensor and tactile sensor using same
US4805456A (en) * 1987-05-19 1989-02-21 Massachusetts Institute Of Technology Resonant accelerometer
US5095762A (en) * 1988-07-14 1992-03-17 University Of Hawaii Multidimensional force sensor
CN1024842C (en) * 1989-08-25 1994-06-01 株式会社长野计器制作所 Strain test element and pressure transducer using it
CN1027011C (en) * 1990-07-12 1994-12-14 涂相征 Silicon-piezoelectric acceleration sensor and manufacture thereof
US5526700A (en) * 1995-09-29 1996-06-18 Akeel; Hadi A. Six component force gage
JP3489309B2 (en) 1995-12-27 2004-01-19 株式会社デンソー Method for manufacturing semiconductor dynamic quantity sensor and anisotropic etching mask
JPH1022509A (en) 1996-06-28 1998-01-23 Omron Corp Sensor device
CN2306701Y (en) * 1997-02-24 1999-02-10 叶美金 Imbalance pressure-regulating water bed structure
DE10066435B4 (en) 1999-07-26 2012-03-08 Denso Corporation Semiconductor sensor for a physical quantity
JP4403607B2 (en) 1999-07-26 2010-01-27 株式会社デンソー Semiconductor dynamic quantity sensor
EP1307720A1 (en) * 2000-07-06 2003-05-07 California Institute Of Technology Surface-micromachined pressure sensor and high pressure application
JP2002350260A (en) 2001-05-28 2002-12-04 Matsushita Electric Works Ltd Semiconductor pressure sensor
TW502406B (en) * 2001-08-01 2002-09-11 Siliconware Precision Industries Co Ltd Ultra-thin package having stacked die
US7344678B2 (en) * 2002-11-15 2008-03-18 The Regents Of The University Of California Composite sensor membrane
EP1491901A1 (en) * 2003-06-25 2004-12-29 Matsushita Electric Works, Ltd. Semiconductor acceleration sensor and method of manufacturing the same
DE10346626B4 (en) * 2003-10-08 2013-02-21 Robert Bosch Gmbh Pressure sensor housing
US20080056945A1 (en) * 2004-06-15 2008-03-06 Nec Corporation Stuctural Body, Chip Using The Same, And Method Of Controlling Lyophilic/Lyophobic Property
JP4680566B2 (en) * 2004-10-26 2011-05-11 本田技研工業株式会社 Multi-axis force sensor chip and multi-axis force sensor using the same
TWI282587B (en) * 2005-11-11 2007-06-11 Touch Micro System Tech Method of performing double-sided process
US8080869B2 (en) * 2005-11-25 2011-12-20 Panasonic Electric Works Co., Ltd. Wafer level package structure and production method therefor
WO2008003051A2 (en) * 2006-06-29 2008-01-03 Analog Devices, Inc. Stress mitigation in packaged microchips
JP5253859B2 (en) * 2008-03-28 2013-07-31 ラピスセミコンダクタ株式会社 Structure of acceleration sensor and manufacturing method thereof
CN101290255B (en) * 2008-05-20 2011-08-24 无锡市纳微电子有限公司 Preparing method of 0-50pa single slice silicon based SOI ultra-low micro pressure sensor
KR101012268B1 (en) 2008-06-20 2011-02-07 한국표준과학연구원 Tactile sensor having membrane structure and manufacturing method thereof
EP2141490B1 (en) 2008-07-02 2015-04-01 Stichting IMEC Nederland Chemical sensing microbeam device
CN102301746B (en) * 2009-01-27 2015-12-02 惠普开发有限公司 Acoustic transducer
JP5243988B2 (en) * 2009-02-10 2013-07-24 本田技研工業株式会社 Multi-axis force sensor and acceleration sensor
JP5652775B2 (en) * 2009-05-29 2015-01-14 トレックス・セミコンダクター株式会社 Acceleration sensor element and acceleration sensor having the same
JP2011077108A (en) * 2009-09-29 2011-04-14 Elpida Memory Inc Semiconductor device
JPWO2011039797A1 (en) 2009-09-29 2013-02-21 パイオニア株式会社 MEMS sensor
FR2955443B1 (en) * 2010-01-19 2012-03-23 Univ Maine ELECTRODYNAMIC SPEAKER STRUCTURE WITH MEMS TECHNOLOGY
WO2011114628A1 (en) * 2010-03-18 2011-09-22 パナソニック株式会社 Mems element, and manufacturing method of mems element
CA2806486C (en) * 2011-02-07 2017-03-21 The Governors Of The University Of Alberta Piezoresistive load sensor
JP2013052546A (en) * 2011-09-01 2013-03-21 Fujifilm Corp Structure having liquid-repellent surface, nozzle plate of inkjet head, and method for cleaning structure and nozzle plate
EP2589958B1 (en) * 2011-11-04 2016-10-26 Stichting IMEC Nederland Chemical sensing
JP5454628B2 (en) 2012-06-29 2014-03-26 株式会社デンソー Pressure sensor
US9176018B2 (en) * 2013-02-22 2015-11-03 Bin Qi Micromachined ultra-miniature piezoresistive pressure sensor and method of fabrication of the same
JP6237978B2 (en) 2013-03-13 2017-11-29 オムロン株式会社 Capacitive sensor, acoustic sensor and microphone
CN103604538B (en) 2013-11-29 2017-07-14 沈阳工业大学 MEMS pressure sensor chip and its manufacture method based on SOI technology
WO2015083874A1 (en) 2013-12-03 2015-06-11 재단법인 멀티스케일 에너지시스템 연구단 High-sensitivity sensor comprising conductive thin film containing cracks and method for manufacturing same
JP2015123547A (en) 2013-12-26 2015-07-06 株式会社村田製作所 Wafer, electronic part, manufacturing method of wafer and manufacturing method of electronic part
JP2015184100A (en) * 2014-03-24 2015-10-22 セイコーエプソン株式会社 Physical quantity sensor, manufacturing method of the same, pressure sensor, altimeter, electronic apparatus, and mobile body
WO2015198185A1 (en) 2014-06-23 2015-12-30 Ecole Polytechnique Federale De Lausanne (Epfl) Electrochemical coating stress sensor, apparatus and method for accurately monitoring and controlling electrochemical reactions and material coating
WO2016121155A1 (en) * 2015-01-27 2016-08-04 国立研究開発法人物質・材料研究機構 Sensor having porous material or particulate material as receptor layer
DE102015213774A1 (en) * 2015-07-22 2017-01-26 Robert Bosch Gmbh MEMS component with sound-pressure-sensitive membrane element and piezosensitive signal detection
US20170199217A1 (en) 2016-01-13 2017-07-13 Seiko Epson Corporation Electronic device, method for manufacturing electronic device, and physical-quantity sensor
JP6642044B2 (en) 2016-01-28 2020-02-05 セイコーエプソン株式会社 Physical quantity sensors, electronic devices and moving objects
JP2017181147A (en) 2016-03-29 2017-10-05 セイコーエプソン株式会社 Pressure sensor, altimeter, electronic apparatus, and movable body
US10866203B2 (en) * 2016-03-31 2020-12-15 Kyocera Corporation Stress sensor
US11119117B2 (en) * 2016-09-23 2021-09-14 Sumitomo Precision Products Co., Ltd. Sensor
JP6862964B2 (en) 2017-03-17 2021-04-21 富士電機株式会社 Manufacturing method of semiconductor pressure sensor device and semiconductor pressure sensor device
US10634695B2 (en) * 2017-04-26 2020-04-28 Minebea Mitsumi Inc. Force sensor
US11029227B2 (en) * 2018-06-04 2021-06-08 Vitesco Technologies USA, LLC CSOI MEMS pressure sensing element with stress equalizers
US10962427B2 (en) * 2019-01-10 2021-03-30 Nextinput, Inc. Slotted MEMS force sensor
US11051106B2 (en) * 2019-04-29 2021-06-29 Fortemedia, Inc. Movable embedded microstructure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070023851A1 (en) * 2002-04-23 2007-02-01 Hartzell John W MEMS pixel sensor
JP2009229450A (en) * 2008-02-27 2009-10-08 Kyocera Corp Acceleration sensor device and method for manufacturing acceleration sensor device
EP2579010A1 (en) * 2010-05-24 2013-04-10 National Institute for Materials Science Surface stress sensor
US20140352447A1 (en) * 2012-04-17 2014-12-04 National Institute For Materials Science Double-side-coated surface stress sensor
CN104236766B (en) * 2013-06-13 2016-09-14 中国科学院上海微系统与信息技术研究所 Encapsulation stress floats self-compensating dual suspension formula force-sensing sensor chip and preparation method with temperature

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2019059326A1 *

Also Published As

Publication number Publication date
EP3974794A1 (en) 2022-03-30
CN111108357A (en) 2020-05-05
US20200249104A1 (en) 2020-08-06
US11573137B2 (en) 2023-02-07
CN111108357B (en) 2021-12-21
EP3671155A1 (en) 2020-06-24
EP3671155B1 (en) 2021-10-20

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