Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
  • G01B11/00—Measuring arrangements characterised by the use of optical techniques
  • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
  • G01B11/00—Measuring arrangements characterised by the use of optical techniques
  • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/185—Joining of semiconductor bodies for junction formation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67242—Apparatus for monitoring, sorting or marking
  • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
  • H01L22/10—Measuring as part of the manufacturing process
  • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
  • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
  • H01L2224/081—Disposition
  • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
  • H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
  • H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
  • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
  • H01L2224/081—Disposition
  • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
  • H01L2224/08151—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/08221—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/08225—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
  • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
  • H01L2224/081—Disposition
  • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
  • H01L2224/08151—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/08221—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/08245—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
  • H01L2224/8012—Aligning
  • H01L2224/80121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
  • H01L2224/8013—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
  • H01L2224/80908—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving monitoring, e.g. feedback loop
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/30—Technical effects
  • H01L2924/35—Mechanical effects
  • H01L2924/351—Thermal stress
  • H01L2924/3511—Warping

Definitions

• the present invention relates to a measuring device and a method according to the independent claims.
• connection process is called bonding.
• the bonding becomes rough
• Permanent and temporary bonds divided. Permanent bonding creates a permanent connection between the two substrates. This permanent connection takes place by interdiffusion of metals, by cation-anion transport during anodic bonding or by
• So-called bonding adhesives are mainly used for temporary bonding. These are adhesives made by a Coating processes are applied to the surface of one or both substrates in order to act as an adhesion promoter between the substrates.
• Hybrid bonding is a subspecies of fusion bonding.
• Hybrid bonding represents the connection of two substrate surfaces, which each consist of an electrical and a dielectric substrate region.
• the corresponding correlating substrate regions are connected to one another by means of a fusion bond (prebond).
• prebond fusion bond
• All bonding methods use bonders to join the substrates to be bonded together.
• the two substrates to be joined can be subjected to pretreatments such as surface activation, cleaning steps, alignment steps until the actual prebonding step takes place.
• the substrate surfaces are brought into contact with one another on a very small area.
• the joining reaction is initiated, after which the joining reaction, that is to say the formation of the bridge bonds, can proceed without external energy supply.
• the joining process takes place continuously through the spreading of a Bond wave.
• the bond wave was initiated centrally on two identical, non-structured substrates, it runs in the Ideaifail as a concentrically growing circular front along the substrate radius. Structured substrates, defects, etc. change the course of the bond wave.
• non-bonded areas between the two substrates, e.g. due to gas inclusions
• Error propagation add up and only be detectable and quantifiable after the prebonding process.
• the substrates can be aligned very precisely with one another by alignment systems, the substrates themselves can be distorted during the bonding process.
• the functional units will not necessarily be correctly aligned with each other at all positions.
• Alignment inaccuracy at a particular point on the substrate can be a result of distortion, scaling error, lens error (enlargement or reduction error), etc.
• overlay In the semiconductor industry, all topics dealing with such problems are subsumed under the term "overlay”. A corresponding introduction to this topic can be found, for example, in: Mack, Chris. Fundamental Principles of Optical Lithography - The Science of Microfabrication. WILEY, 2007 , Reprint 2012.
• Apertures of the photomask and the wavelength of the light used (electromagnetic radiation) are limited. Mask distortions are transferred directly into the photoresist and thus into the structures produced.
• Movement devices such as guides with the coupled
• a local overlay error arises depending on the location, predominantly due to elasticity and / or plasticity problems, in the present case primarily caused by the continuously propagating bond wave.
• errors III. and IV referred to as a "run-out" error. This error arises above all from a distortion of at least one substrate during a bonding process
• US20120077329 A1 describes a method for obtaining a desired alignment accuracy between the functional units of two substrates during and after the bonding.
• the "run-out" errors can not only be determined by appropriate measuring devices (EP2463892B1), but also described, or at least approximated, by mathematical functions. Because the overlay errors translations and / or rotations and / or
• this vector function is a function f: R2-> R2, hence one
• the most frequently used method is the observation of the course of the bond wave with optical means, in particular camera systems, especially with a transmitted light method, in particular in the infrared spectrum, the substrates having to have sufficient transparency for the observation of the bond wave.
• optical means in particular camera systems
• a transmitted light method in particular in the infrared spectrum
• Substrate surfaces are created. Furthermore, doping can be applied.
• the object of the present invention is therefore to eliminate the disadvantages of the prior art and, in particular, to provide a measuring device and a method for determining the course and / or in particular the shape of a bond wave with which the aforementioned disadvantages are at least largely eliminated.
• the invention relates to a measuring device for determining a course of a bond wave in a gap between a first substrate and a second substrate, comprising:
• At least one transmitter that can be placed on a peripheral edge of the gap for transmitting signals in the form of electromagnetic waves along a signal path running through the gap, - At least one receiver that can be placed on the circumferential edge for receiving the signals of the first signal path that are sent by the transmitter through the gap and that can be changed before the bonding and / or during the bonding.
• the invention relates to a special invention
• a measuring device for determining a course of a bond wave in a gap between a first substrate and a second substrate comprising:
• At least one transmitter that can be placed on a peripheral edge of the gap for transmitting signals in the form of electromagnetic waves along a first signal path running through the gap and at least one further one running through the gap
• At least one receiver that can be placed on the peripheral edge for receiving the signals of the first signal path and the further signal path (s) that are sent through the gap by the transmitter and that can be changed before the bonding and / or during the bonding.
• the measuring device in one
• Bonding device in particular in-situ, can be used.
• the transmitter and / or the receiver is / are movable along the peripheral edge.
• the peripheral edge is rotatable, in particular can be rotated to adjust, so that the transmitter and / or the receiver can form an optimal signal path with self-adjusting value maxima. It is further preferred that the measuring device for determining a course of a bond welie in a gap between a first substrate and a second substrate
• Transmitter for sending signals in the form of electromagnetic waves along a first one running through the gap
• the measuring device has a plurality of transmitters distributed on the peripheral edge and / or a plurality of receivers distributed on the peripheral edge, each associated with a transmitter, in particular arranged opposite one another, in particular at least two receivers per transmitter.
• each transmitter has several signal paths
• each receiver transmits in particular simultaneously and / or each receiver is assigned to a single signal path.
• the measuring device is preferably further provided with an evaluation unit for determining measured values along the signal paths,
• transformation in particular by transformation, preferably by integral transformation, preferably radon transformation, of the at least one
• the at least one receiver is aasebüdet optical data of the signal, in particular one or more of the following optical properties:
• Another object of the invention relates to a bonding device, comprising a measuring device according to one of the preceding
• the bonding device identifies influencing means for influencing the bond width depending on the course of the bond wave.
• Another object of the invention relates to a device having a measuring device which, with a method according to the invention, does not touch the gap, that is to say the distance between one another
• An application of the device can in particular check and / or influence the arrangement of two substrates coated with adhesive before the adhesive bonding process.
• Another object relates to a method for determining a course of a bond wave in a gap between a first substrate and a second substrate, in particular with a measuring device according to the previous embodiments, with the following steps, in particular the following sequence:
• Another object relates to a method for bonding two substrates, the course of the bonding wave using a method according to
• the bond wave is influenced as a function of the course of the bond wave.
• the basic idea of the present invention is to transmit electromagnetic waves through the gap between the substrates to be bonded and to change them after they have passed between the substrates before and / or during the prebonding process, that is to say during the course of a bond wave, in particular during the change in the position of the bond wave. to eat.
• a change in the electromagnetic wave is understood to mean a change in the intensity and / or the polarization and / or the phase etc.
• the measurement can include a large number of signal paths of the electromagnetic waves, So include measurement sections, the located bond wave can be determined from the measurement results from the different, in particular crossing signal sections in the gap. Furthermore, this makes them triggerable
• Actions in particular to influence the bond times.
• the triggerable actions can be automated so that the optimal parameters can be determined, in particular in real time, for each pair of substrates to be bonded.
• the present invention could use the change of a particle beam, in particular an ion beam, least preferably a neutron beam, as the measurement signal instead of electromagnetic waves.
• the invention is based on the further idea of changing
• One, in particular independent, or further aspect of the invention is that the bond wave is observed directly in the gap, in particular in real time. Therefore, the nature or transparency of the substrates is not relevant for the observation of the bond wave.
• Another, in particular independent, aspect of the invention is directed to a bonding device, in particular a fusion bonding device, in which a measuring device according to the invention is integrated.
• the fusion bonding device uses the measured values of the measuring device according to the invention in order to trace the course of the bonding wave of the substrates
• the fusion bond device is the actuator, the measuring device the feedback member and the bonding substrate pair of the articles.
• the article that is, the pair of substrates in which the bond flow passes and can be influenced, embodies the measurement object on which a measurement variable can be determined.
• a device according to the invention which is in particular independent, is in particular a fusion bonding device which actively influences the bonding process in a controlled manner.
• Another, in particular independent, device according to the invention is thus the measuring device with all transmitters and receivers, and
• Data processing means and display means which carries out the determination of the course of the bond weight and stores, converts, evaluates, forwards and displays the measurement results.
• Another, in particular independent aspect of the invention describes the measuring method for determining the course of the bond wave, in particular by lateral observation.
• Another, in particular independent, method according to the invention describes the regulated bonding method which influences the course of the bonding process with the aid of the measuring method according to the invention and
• the result of the bonding method according to the invention namely the article, is regarded as the bonded substrate stack.
• the invention is based on the further idea that the bond wave
• the invention is based in particular on the idea that the method according to the invention measures the lateral boundary of the mostly convex bond surface by coupling electromagnetic radiation, in particular parallel to the substrate plane, into the open gap between the substrates and the transmission (at smaller distances primarily through the
• Waveguide properties conditional) between the substrate surfaces and their areal transmission is quantified by the extended gap. Lateral observation makes it possible to query the entire bond wave at any time, regardless of the transmission of the substrate material. This allows the spread of the bond wave to be measured.
• the invention is based on the further idea that the bond wave can be controlled or regulated very precisely via actuators or static environmental conditions, for example by several vacuum zones arranged one behind the other can be deactivated at least one substrate holder.
• the substrates detach (at least partially) from
• the invention thus comprises the following approaches / advantages:
• Bonding interface of the substrates is made possible, so that the evaluation of the approach of the substrates to one another and / or the course of the bonding wave can be carried out before and / or preferably during the fusion bonding process, in particular within the bonding device,
• the invention allows the in-situ measurement of the bond wave between two substrates.
• Appropriately designed sensors are recyclable, can be quickly installed in any type of fusion bonder, and in the long term are more cost-effective than the sensors and devices according to the prior art, are less labor-intensive and thus allow fast and
• the sensors work without contact and are arranged outside the substrates, the measurement (both the measuring instruments and the measuring method itself) does not generate any particles, which would lead to contamination of the bond interface.
• the measuring principle is a non-tactile, particle-free principle.
• the transmission along the substrate surfaces (in the gap) at least partially utilizes the waveguide properties of the composite material.
• the electromagnetic radiation between the substrate surfaces at least partially utilizes the waveguide properties of the composite material.
• Substrate surfaces which have a higher refractive index than the medium in the gap, tossed back and forth.
• the complex refractive index real part; refraction, imaginary part; absorption
• the transmission is influenced by the gap.
• the minimum measurable distance between the substrate surfaces can, in principle, be greater than 0 nm.
• Measurement accuracy The distance at which the transmission breaks off without the substrates being bonded and the gap thus being completely reduced to a height of 0 nm can be determined, but is usually not of great importance on polished surfaces.
• the distance at which the transmission stops and the joining of the substrate surfaces begins i.e. the height of the gap of 0 nm, are so close to one another that the person skilled in the art can easily assume that when approaching preferably below 10 nm , particularly preferably below 5 nm, very particularly preferably below 2 nm
• the wavelength of the electromagnetic radiation can be selected with an adjustable radiation source so that the highest transmission is achieved in the gap. In other words, a high spectral absorption can be avoided by entering the wavelength of the radiation source. This allows the measuring device to be built in a space-saving manner and to be energy-efficient.
• the wavelength of the transmitter, the source lies in the wavelength range between 0.5 not to 10,000 ⁇ m, preferably between 250 ⁇ m to 5000 ⁇ m, particularly preferably between 300 nm and 2000 ⁇ m, very particularly preferably between 300 nm and 1500 nm.
• the radiation source is a particular one
• Substrate surfaces can be understood in a generalized manner) the reflections only efficiently at very shallow angles. The angle between that
• the substrate surface is less than 90 °, preferably less than 75 °, more preferably less than 30 °, most preferably less than 10 °, most preferably less than 1 °.
• This angle of the radiation depends both on the angle of incidence (of a parallel beam) and the angle of divergence (widening or
• Non-parallelism The latter can also be described by the numerical aperture (abbreviated as NA) of the coupling and in turn depends on the focusability (on the small input slit).
• NA numerical aperture
• the divergence angle can be seen as the cause of the numerical aperture. It is therefore possible to set the angle of divergence as
• Wavelength range between 300nm and 1500nm the transmission no longer depends completely linearly on the distance, because less and less
• transverse modes fit in the waveguide (i.e. in the narrow gap).
• the minimum measurable distance between the surfaces is defined by the "cut-off" -
• An optical transfer function describes the change in the properties of the electromagnetic radiation in the gap.
• the minimum size of the outer gap can be set by correspondingly precise focusing (better 10 micrometers, preferably better 5 micrometers, particularly preferably better 2 micrometers) and / or adjustment, and positioned at a defined distance before contacting the wafers. If the gap is too small, the proportion of
• the course of the beam can be changed and the measuring accuracy is limited.
• the measuring device as a transmitter or receiver (both should fall under the generic term sensor) in the device, in particular at a short distance, in particular contactless to the outer edge of the
• the sensors that is to say transmitters and receivers, can be placed, in particular at a short distance, in particular in a contactless manner, from the outer edge of the substrate holder, preferably of the lower substrate holder, at the level of the plane of the bonding wave.
• the transmitter and / or receiver can be installed in a substrate holder, in particular lower substrate holder, and correspondingly
• the transmitter and the receiver can be arranged in the plane of the bond wave to the outer edge of the subsira pair.
• the transmitter and receiver advantageous to arrange the transmitter and receiver at the level of the bond wave to the outer edge of the pair of substrates.
• the measuring device In a first embodiment of the measuring device, the
• Measuring device as a measuring sensor, the parameters of the bonding wave are only recorded and are not used for influencing the prebonding process. In other words, this is
• Embodiment no information technology coupling between the fusion bonder and the measuring device.
• the mutually aligned substrates are mutually aligned.
• the substrates are aligned with one another using alignment marks.
• At least one substrate is pre-curved.
• the prebond is initiated with the bond initiation at a contact point.
• the measuring device detects the bonding wave which arises between the substrates and which interacts with the optical properties of the gap changes the substrates and thus allows an optical property of the substrate surfaces which is dependent on the spread of the bondwells and / or an optical property of the gap which is dependent on the bondwells to be determined.
• a time-dependent position map is created for the location-dependent determination of the course of the bond times.
• at least one optical and / or electromagnetic signal from a transmitter is coupled in at the edge of the non-contacted substrate pair, that is to say is sent into the gap.
• the signal penetrates the gap along a measuring section or one
• the signal sent through the gap in this way has undergone at least one (cumulatively detected) change in at least one of its optical properties along the signal path or a plurality of signal paths when the bond wave strikes.
• Conceivable according to the invention as properties to be recorded by the receiver are, in particular, the following, individually or in combination:
• the cumulative output signals are preferably recorded as a function of the angular position of the transmitter and / or detector.
• the preferred mathematical transformation for converting the cumulative signals into the change in the optical signals as a function of the position within the gap for creating a position map is the Radon transformation.
• one of the detected signal paths of the optical path as a function of the position of the bond wave.
• the method according to the invention preferably runs between two substrates in a device for fusion bonding.
• the substrates as measurement objects are part of the measurement section. Without a pair of substrates, the
• the inventive, in particular regulated, device for bonding does not work.
• No measurement method according to the invention can run without substrates as measurement objects.
• electromagnetic signals are coupled into the gap between the two substrates by a transmitter at least at one point outside the peripheral edge of a first substrate, which run along a signal path or preferably in terms of area, that is to say with a plurality of signal paths. At least one of their physical properties changes along the signal paths on the basis of the position or speed of the bond wave to be determined.
• the detector at the exit of the signal from the gap (that is to say at the end of each signal path) therefore receives a measuring signal that is either summed up (accumulated) or at least continuously changed along the measuring path.
• the cumulative change in the recorded properties along each signal path is represented by a mapping rule in a measurement signal or is recorded as a value.
• the transmitter and / or detector / receiver are moved along the outer contour or the peripheral edge of a substrate, and several measuring signals of several signal paths are determined and these are determined with one
• the local measurement signals are then clearly dependent on the local position of the bond wave.
• the preferred transformation for the conversion is the Radon transformation.
• the mathematical relationships between the measured values of the physical and / or optical properties and the behavior of the bond wave are determined empirically in particular.
• a functionally provided for the assemblies can be provided on at least one of the substrates
• the metallized substrates can be understood as flat, reflecting metal mirrors and not semiconductor mirrors with a lower reflectivity than metal mirrors.
• the substrates (which are to be understood both as part of a measuring device and at the same time as substrates to be bonded in a bonding device) can have a rectangular, round or any other shape.
• the substrates preferably have a circular shape.
• the diameter of the substrates is preferably 1 inch, 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, 12 inches, 18 inches or more than 18 inches.
• the substrates are preferably used in the semiconductor industry and the information relates to wafers.
• the thickness of the substrates depends on the application. In the majority of cases, the thickness is greater than 10 pm, preferably greater than 100 pa, more preferably greater than 1 OU Moi, most preferably greater than 2000 pm, most preferably greater than 5000 pm. In general, the thicknesses of the two substrates can be different.
• a pair of substrates with a temporary fusion bond that is joined according to the invention can be used, in particular, for testing the integrated circuits
• Substrate surfaces can be avoided.
• the substrates After multiple reflections in the gap, the substrates preferably conduct the radiation of the transmitter as transmittance to the receiver in the
• a measure of the smoothness of the surface can be quantified with the average roughness.
• the average roughness in particular the mean roughness, is less than 10000 ⁇ m, preferably less than 100 ⁇ m, with a larger one
• substrates consisting of
• the orientation of the crystal lattice has an influence on the refractive index of the respective surface and is therefore of some importance, which is known to the person skilled in the art.
• the parts of the measuring device relevant according to the invention are the transmitters, the gap between the two at least partially reflecting
• Substrate surfaces and the detectors / receivers are used for the measurement of the bond wave.
• the measuring device according to the invention must at least one position-dependent optical required according to the invention
• the measurement signals are preferably evaluated as follows:
• the optical property of the change in intensity is used in order to maintain the local, temporally resolved position of the bond wave in the gap.
• Change in intensity means the process of weakening an incident beam due to scattering and lossy
• the optical gap must therefore be at least one of the shape of the
• the beam running in the gap preferably uses the physical one
• the signal arriving at the detector is therefore an intensity changed along the signal path, in particular at least predominantly, by the bond wave along the measuring path.
• the local change in intensity is preferably determined by recording a plurality of measurement sections, in particular by moving the transmitter and / or detector and using the Radon transformation.
• the strati running in the gap! experiences a weakening of the intensity in
• Receivers direct "visual contact” when approaching up to a limit of the height of the gap.
• the reflections along the signal path are negligibly small in comparison to the scattering or filtering caused by the partial blockage, caused by the bond wave.
• the optical property of the transit time is used to determine the position of the
• the running time of the measuring beam in the gap is limited to a minimum in the non-approximated state.
• Refractive index of the substrate surfaces that delimit the gap is not approximate
• refractive index of the air or of the vacuum in the gap is 1
• refractive index in the air is 1
• the refractive index of the boundary materials preferably does not change or changes very little as a result of prestressing and deformation.
• the coupled signal is preferably kept predominantly in the gap by the reflection materials.
• One idea according to the invention consists in particular in that, due to a local narrowing of the gap, the optical material locally undergoes several reflections and a local change, in particular an increase in the
• optical path thus caused the change in the transit time is caused in the gap.
• Substrates This primarily means a local change in intensity or duration.
• Electromagnetic radiation is preferred with the Fresnel
• the signal arriving at the detector is therefore an intensity of the electromagnetic radiation which is changed along the signal path, in particular predominantly, preferably exclusively, by the bond wave along the signal path.
• the determination of the local intensity or the local transit time is preferably carried out by recording a plurality of measurement sections, in particular by moving the transmitter and / or detector along the peripheral edge and using the Radon transformation.
• the course of the bond wave by changing the color of the beams by changing the optical multiple reflections in the gap.
• the known spectral composition of the emitted signals is known. Since the delimiting substrate surfaces absorb or reflect the spectrum of the radiation differently, a smaller gap distance and the associated growing number of reflections can occur a change in the spectrum can be measured, which is perceived or measured as a color change.
• transverse electromagnetic waves are used as the optical property.
• a TEM-Weüe is used to adjust an electromagnetic wave, the electrical and magnetic field components of which disappear in the direction of propagation.
• Boundary conditions A boundary condition is one
• standing, transverse electromagnetic waves are formed by the boundary conditions according to the invention.
• the distribution of the electromagnetic field density in space is preferably strictly symmetrical.
• the different forms of training of standing waves are called fashions.
• the modes of the TEM-Welien are comparable with the standing waves of the acoustics or the standing waves that can form when the ropes are clamped.
• Another idea according to the invention consists in particular of keeping a monochromatic electromagnetic wave below a certain level
• Boundary conditions form one of the possible modes. Standing transverse electromagnetic waves thus arise in the gap. If one analyzes the cross-section of the gap, the intensity along the
• the symmetrical intensity distribution can be used for simple geometric
• Boundary conditions such as those of the extended thin gap, are represented by a mathematical function.
• This math function contains so-called order parameters, with the help of which conclusions on the
• the idea according to the invention of this embodiment according to the invention is therefore to register the intensity distribution on the receiver side. Due to the effect of the bond wise along the measurement section, the geometry is changed such that the gap becomes thinner in particular. This changes the boundary conditions for the TEM wave. The local change in the boundary conditions thus has an influence on the measured intensity signal at the end of the measuring section. To get a measurement result along the entire length when the substrates approach each other
• the signals are not integral signals but surface signals. So it becomes the intensity distribution along a solid angle around the normal of an area detector
• the local intensity distribution in the gap determined in this way can again be associated with the temporally changing course of the bond wave and the narrowing of the gap caused thereby, and thus allows the determination of the entire position course of the bond wave
• the number of transmitters is greater than or equal to one, preferably greater than 5, with greater preference greater than 12, with greatest preference greater than 30.
• the number of detectors according to the invention is greater than or equal to one, preferably greater than 5, with greater Preferably greater than 12, most preferably greater than 30.
• the transmitter and the receiver / detector are integrally formed or transmitters and / or receivers are, in particular uniform and / or symmetrical, on the peripheral edge of the substrates to be measured, in particular in the plane of the preferably planar extending Bondweil arranged or become rotationally hot constant
• the transmitters can be designed as point, line or preferably surface radiators.
• Detectors can be designed as points, lines or area detectors. This measurement process can also be called tomography.
• reflectors are provided outside the outer edge of the substrates.
• the reflectors are objects, preferably spheres and / or cylinders, the axes of which are parallel to the normal to the gap or parallel to the
• the reflectors can be designed as plane mirrors or as convex or concave mirrors.
• the transmitter couples electromagnetic radiation with a predetermined frequency into the gap. After a predetermined time, the detector measures the response of the system to the injected signal.
• the transmitter and detector can be located at different positions on the circumference of the substrates. The transmitter and detector are preferably synchronized, so that the detector starts measuring the time as soon as the transmitter couples the signal into the gap. After a certain time, the detector measures a signal, deflected by a reflector.
• the electromagnetic signal has undergone a change in intensity as it traverses the gap. The loss of intensity is a measure of the absorption along the signal path, caused by the change in distance of the gap as an effect of the course of the bond wave.
• Bond wave at the position of a reflector is done by measuring the Change of the output signal from the input signal.
• the decrease in intensity is preferably used as a measurement variable.
• the change in the distance between the substrates is measured at a distance of more than 0 nm, preferably more than 1 ⁇ m, preferably, more than 50 am, with greater preference more than 100 nm, with even greater preference more than 100 micrometers, with the greatest Preferably more than 150 micrometers, ideally more than 200 micrometers, ideally more than 5000 micrometers.
• Reproducibility of the measuring device is better than 20%, with preference better than 15%, with greater preference better than 10%, with greatest preference better than 5%, with greatest preference better than 1%, based on the same recording time and / or the same location
• the measurement can take place at elevated temperatures.
• the measurement is carried out at less than 500 ° C, preferably less than 200 ° C, with greater preference less than 100 ° C, with even greater preference less than 50 ° C, most preferably at room temperature.
• the substrate is preferably cooled to less than 10 ° C., particularly preferably less than 0 ° C., very particularly preferably less than -30 ° C.
• cooling or heating the substrates in the resulting bond can result in undesirable thermal stresses. So the preferred measurement temperature is
• the measuring device can be used in a wafer processing device, especially in a wafer bonding device, in particular in a fusion bonder, in particular m-line, reproducible and graphically representable profiles of the bond portions can be determined. Furthermore, it is possible according to the invention to manipulate the bond welie between the substrates on the basis of the bond wave run (temporal and local course) accordingly in order to optimize the course of the bond welie to minimize the run-out error.
• the distance between the substrates is regulated by means of
• the curvature of at least one of the substrates is actively changed by means of a variably applied force of a pressure element, in particular a so-called pin.
• the deflection of at least one of the substrates is deformed by means of locally acting fixations, in particular locally switched individually controllable vacuum tracks, and / or in particular with piezo actuators, depending on the current position of the bond welie, into a form predetermined by a mathematical model, by at least loosening individual vacuum points in a targeted manner, are preferably subjected to excess pressure and / or mechanical force.
• the deflection of at least one of the substrates is achieved by means of an at least partially locally acting plate, which as
• Stiffening plate can be understood, actively influenced.
• the rigidity of the plate can be reduced locally by means of compliant mechanisms such as incompressible fluids in channel systems mathematical models can be given and deformed to a predetermined shape.
• the reinforcement plate can be expanded independently of one another along at least two axes.
• the deflection of at least one of the substrates is achieved by means of an at least partially locally acting plate, which as
• Stiffening plate can be understood, actively influenced.
• the deflection of the stiffening plate with the substrate attached to it is actively deformed by actuating elements such as piezo linear actuators using a form predefined by a mathematical model.
• the transmitter (s) and / or the receiver (s) can be moved along the peripheral edge.
• the movement is advantageously controlled by the
• Control device in particular by means of stepper motors controlled by the control device.
• the synchronized movement of all transmitters and / or receivers can be controlled.
• the movement preferably takes place along one to the peripheral edge
• shape-congruent track in particular a ring track, preferably a, in particular circumferentially closed, circular track.
• a multiplicity of transmitters and / or receivers becomes stationary, immobile on the edge of the substrate arranged.
• Measurement signal are generated.
• the results recorded and calculated in this way can provide almost identical results compared to the results from measurements with rotated transmitters and receivers.
• Measuring device has a plurality of transmitters distributed on the peripheral edge and / or a plurality of receivers allocated to the peripheral edge, each associated with a transmitter, in particular arranged opposite one another, in particular at least two receivers per transmitter.
• each transmitter transmits several signal paths, in particular simultaneously, and / or each receiver is assigned to a single signal path, several receivers can be arranged as transmitters on the peripheral edge, so that the detection can take place more efficiently.
• Measuring device an evaluation unit for determining locations
• a first method for determining the course of the bonding wave when bonding two substrate surfaces, in particular with lateral observation comprises in its most general form the following steps, in particular the following sequence: Arrangement of a measuring device for the gap of a first to be bonded
• Emitting signals in the form of electromagnetic waves through the transmitter or transmitters arranged on the peripheral edge along a first signal path running through the gap and at least one further signal path running through the gap,
• electromagnetic waves occur through the transmitter or transmitters arranged at the peripheral edge along a first signal path running through the gap
• a second method according to the invention for influencing the course of the bond wave when bonding two substrate surfaces comprises observing the bond wave, in particular from the side, and regulating the actuators for influencing the bond wave.
• the method according to the invention comprises the following steps, in particular the following sequence:
• Fig. L a a cross-sectional view of an inventive
• Fig i b a cross-sectional view of an inventive
• 2c a schematic plan view of a third embodiment of a measuring device according to the invention
• 3 a schematic plan view of a fourth embodiment of a measuring device according to the invention
• Fig. 5b a schematic representation of a measurement of an optical
• Fig. 6 a schematic representation of a measurement of an optical
• Figure la shows schematically a bonding device 10, in particular
• Fusion bonding device only a first one, in particular an upper one
• Substrate holder 1 1 and a second, in particular lower substrate holder 12 are shown.
• a first substrate 2 and a second substrate 4 are arranged between the substrate holders 11, 12 and are shown at a distance formed as a measuring gap 3.
• individually adjustable fasteners 5, 5 mean that the
• Vacuum / pressure channels and / or magnetic and / or electrostatic and / or adhesive fastening elements can be individually regulated and / or in
• Groups can be regulated. This means that neighboring ones in particular can
• the measuring device 1 is arranged in the plane of the measuring gap 3 or in the plane of the course of the bond wave, the individual positioning and movement means and measuring means not being shown.
• Measuring device 1 can consist of at least one transmitter 7, not shown, and one receiver 8, not shown.
• the measuring gap 3 is part of the measuring device 1 for measuring optical properties of signals transmitted through the measuring gap 3, wherein the measuring device 1 can either be installed as a measuring device as a measuring device or permanently installed in the bonding device.
• Both substrates 2, 4 are shown in a non-biased position. Biasing of the substrate can be understood as the effect of a biasing element 6 by applying force to the substrate 2.
• FIG. 1 b schematically shows the bonding device 10 described in FIG. 1 a.
• the measuring device 1 can detect a measurement signal in the measuring gap 3 between the lower substrate 4 and the upper substrate 2, with a
• Preload element 6 in particular a pin, which pretensions the upper substrate 2 in order to be able to connect the substrates 2, 4 to one another.
• the height of the gap as a measuring or
• Asset value is present, there is a correlation between the optical Property of the measurement signal and the height of the gap created so that the measurement results can be output and / or saved as a function of the calculated height of the gap during the course of the bond wave.
• FIG. 2a schematically shows a first embodiment of the measuring device 1 in a top view.
• a transmitter 7 is arranged on a peripheral edge 3u of the measuring gap 3 for measuring and for passing electromagnetic waves, said transmitter 7 sending a signal 9 through the measuring gap 3 along a signal path.
• the transmitter 7 and / or the detector 8 are, in particular synchronized, along the
• Circumferential edge 3u movable, in particular along an annular, preferably circular, orbit, which is represented by arrows.
• the orbit in particular connects directly to the measuring gap 3.
• FIG. 2b schematically shows a second embodiment of the measuring device 1 as an extension of the first embodiment of the measuring device in a top view.
• the embodiment is similar to the first embodiment the measuring device, discussed in FIG. 2a.
• Several transmitters 7, several receivers 8 and signals 9 are shown schematically.
• the signals 9 preferably run as non-centric (circular) chords in the measuring gap 3, preferably crossing one another from the respective transmitter 7 to the respective one
• FIG. 2c schematically shows a third embodiment of the measuring device 1 as a modification of the first or second embodiment of the
• An exemplary transmitter 7 sends a signal 9 to one
• Receiver 8 shown as an example in a measuring gap 3.
• a reflector 13 deflects the signal in measuring gap 3 from transmitter 7 to receiver 8.
• the transmitter 7, the reflector 13, the receiver 8 are in particular on
• the peripheral edge 3u relates to the peripheral edge of the holding device, which can hold at least one substrate.
• the beam emitted by the transmitter is scattered and / or reflected and / or diffracted in the gap from the current, current location of the bond wave.
• This changed beam can be detected with at least one receiver and used according to the invention to determine the course of the bond wave.
• Receiver 8 assigned to a single transmitter 7 opposite.
• the transmitter 7 transmits compared to those previously described
• Embodiments according to FIGS. 2a-c a signal beam 9, which detects a larger section of the measuring gap 3 and a plurality of
• the signals 9 of the transmitter 7 can be emitted in a pulsed, clocked manner.
• the receivers 8 can accordingly be operated in a continuous or in a synchronized clocked mode, in particular electronically switched.
• Embodiment electronic switching operations can replace a movement of the measuring device 1 on the peripheral edge 3u accordingly.
• the entire measuring gap 3 can be detected by moving the transmitter 7 and the receiver 8 assigned to the transmitter 7 along the peripheral edge 3u.
• a plurality of transmitters 7 and respectively assigned receivers 8 distributed around the circumference can be arranged so that the entire measuring gap 3 can be detected without moving the transmitter and the receiver 8.
• FIG. 4 shows a fifth embodiment for recording the measurement gap 3, a transmitter 7 and a receiver 8 ′ being provided, the
• Receiver 8 ' is equipped as a line or area detector, in particular as a CCD, preferably as a CMOS detector.
• the line or area detector is able to record signals along a line or area and process them immediately.
• both the transmitter 7 and the receiver 8 ′ can be moved along the peripheral edge 3u or a plurality of
• Stepper motors take place, which are controlled by the control system. Regulations and regulating facilities are equivalent. According to the invention, it is particularly conceivable to use correspondingly synchronized, in particular brushless, DC motors with large downstream translation for fine positioning of the transmitter 7 and the
• the recorded data are evaluated by an evaluation unit (not shown).
• a possible evaluation is the local, in particular time-dependent position of the bond wave evaluated by the evaluation unit, plotted at given positions. It can be seen that the course of the bond wave changes as a function of the location and the time.
• FIG. 5a shows the determination of a further optical property of the optical material of the measuring gap 3, namely the loss of intensity.
• Propagation of signal 9 is determined by the direction of propagation
• the different thickness of the arrows schematically represents the intensity, which is high when the signal 9 enters the measuring gap 3.
• FIG. 5b shows the determination of a further optical property of the optical material of the measuring gap 3 with a slightly divergent signal 9 coupled in parallel, only two marginal rays being shown schematically.
• the divergence angle of the transmitter, indicated by the entry arrows of the signal 9, is less than 10 degrees, preferably less than 5 degrees, particularly preferably less than 3 degrees, very particularly preferably less than i degrees.
• the radiation is preferably coupled into the gap parallel to the substrate surfaces.
• FIG. 5a The features described in FIG. 5a continue to apply to the embodiment shown in FIG. 5b.
• FIG. 6 is a schematic illustration of the change in a TEM wave due to a change in distance along the path L.
• the measuring gap 3 changes along the path L from t to t ′, as a result of which the standing electromagnetic wave within the measuring gap 3 also changes.
• This change in the electromagnetic wave leads to a change in the mode of the electromagnetic wave and also in the intensity distribution. From the change in fashion and / or intensity distribution is a location-based Determination of the bond wave possible, with a large number of signal paths being evaluated.
• the intensity distribution of the mode a certain location of the measuring gap 3 can be concluded.
• the local position of the bond wave or disturbances can be determined from this.

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• 2019
  • 2019-01-18 JP JP2021539930A patent/JP7284274B2/ja active Active
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