EP3900057A1 - Uniformité de couleur dans une diode électroluminescente convertie à l'aide de nanostructures - Google Patents

Uniformité de couleur dans une diode électroluminescente convertie à l'aide de nanostructures

Info

Publication number
EP3900057A1
EP3900057A1 EP19858667.9A EP19858667A EP3900057A1 EP 3900057 A1 EP3900057 A1 EP 3900057A1 EP 19858667 A EP19858667 A EP 19858667A EP 3900057 A1 EP3900057 A1 EP 3900057A1
Authority
EP
European Patent Office
Prior art keywords
metasurface
light
light emitting
emitting device
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19858667.9A
Other languages
German (de)
English (en)
Inventor
Antonio LOPEZ-JULIA
Venkata Ananth TAMMA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds Holding BV
Original Assignee
Lumileds Holding BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/230,811 external-priority patent/US11322669B2/en
Application filed by Lumileds Holding BV filed Critical Lumileds Holding BV
Publication of EP3900057A1 publication Critical patent/EP3900057A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

L'invention concerne une couche de nanostructure. La couche de nanostructure comprend un réseau de matériaux nanostructurés conçu pour recevoir un premier faisceau lumineux à un premier angle d'incidence et pour émettre le premier faisceau lumineux à un second angle supérieur au premier angle, les matériaux nanostructurés ayant chacun une plus grande dimension inférieure à 1000nm.
EP19858667.9A 2018-12-21 2019-12-20 Uniformité de couleur dans une diode électroluminescente convertie à l'aide de nanostructures Pending EP3900057A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/230,811 US11322669B2 (en) 2018-12-21 2018-12-21 Color uniformity in converted light emitting diode using nano-structures
EP19156833 2019-02-13
PCT/IB2019/001388 WO2020128629A1 (fr) 2018-12-21 2019-12-20 Uniformité de couleur dans une diode électroluminescente convertie à l'aide de nanostructures

Publications (1)

Publication Number Publication Date
EP3900057A1 true EP3900057A1 (fr) 2021-10-27

Family

ID=69743609

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19858667.9A Pending EP3900057A1 (fr) 2018-12-21 2019-12-20 Uniformité de couleur dans une diode électroluminescente convertie à l'aide de nanostructures

Country Status (3)

Country Link
EP (1) EP3900057A1 (fr)
TW (1) TWI788612B (fr)
WO (1) WO2020128629A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10489924B2 (en) * 2016-03-30 2019-11-26 Samsung Electronics Co., Ltd. Structured light generator and object recognition apparatus including the same
CN113130716B (zh) * 2021-04-21 2023-02-28 京东方科技集团股份有限公司 一种发光二极管器件及其制备方法、显示装置
WO2024037950A1 (fr) * 2022-08-16 2024-02-22 Ams-Osram International Gmbh Composant optoélectronique

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521862B2 (en) * 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
EP2477240A1 (fr) * 2011-01-18 2012-07-18 Koninklijke Philips Electronics N.V. Dispositif d'illumination
JP6165346B2 (ja) * 2014-10-14 2017-07-19 フィリップス ライティング ホールディング ビー ヴィ 側方放射ルミネッセンス構造体及び当該ルミネッセンス構造体を含む照明デバイス
JP6384508B2 (ja) * 2016-04-06 2018-09-05 日亜化学工業株式会社 発光装置
US10088114B2 (en) * 2016-06-02 2018-10-02 Philips Lighting Holding B.V. Plasmonic white light source based on FRET coupled emitters
US11204452B2 (en) * 2016-10-05 2021-12-21 Agency For Science, Technology And Research Diffractive optical element and method of forming thereof

Also Published As

Publication number Publication date
WO2020128629A1 (fr) 2020-06-25
TW202032822A (zh) 2020-09-01
TWI788612B (zh) 2023-01-01

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