EP3874540A4 - Led-übertragungsverfahren und damit hergestelltes anzeigemodul - Google Patents

Led-übertragungsverfahren und damit hergestelltes anzeigemodul Download PDF

Info

Publication number
EP3874540A4
EP3874540A4 EP20791375.7A EP20791375A EP3874540A4 EP 3874540 A4 EP3874540 A4 EP 3874540A4 EP 20791375 A EP20791375 A EP 20791375A EP 3874540 A4 EP3874540 A4 EP 3874540A4
Authority
EP
European Patent Office
Prior art keywords
same
display module
transferring method
module manufactured
led transferring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20791375.7A
Other languages
English (en)
French (fr)
Other versions
EP3874540A1 (de
Inventor
Sangmoo Park
Minsub OH
Doyoung KWAG
Byungchul KIM
Eunhye Kim
Dongyeob Lee
Yoonsuk LEE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from PCT/KR2020/005063 external-priority patent/WO2020213937A1/en
Publication of EP3874540A1 publication Critical patent/EP3874540A1/de
Publication of EP3874540A4 publication Critical patent/EP3874540A4/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
    • H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Led Device Packages (AREA)
EP20791375.7A 2019-04-16 2020-04-16 Led-übertragungsverfahren und damit hergestelltes anzeigemodul Pending EP3874540A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20190044548 2019-04-16
KR1020190132193A KR102867050B1 (ko) 2019-04-16 2019-10-23 Led 전사 방법 및 이에 의해 제조된 디스플레이 모듈
PCT/KR2020/005063 WO2020213937A1 (en) 2019-04-16 2020-04-16 Led transferring method and display module manufactured by the same

Publications (2)

Publication Number Publication Date
EP3874540A1 EP3874540A1 (de) 2021-09-08
EP3874540A4 true EP3874540A4 (de) 2021-12-29

Family

ID=73006267

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20791375.7A Pending EP3874540A4 (de) 2019-04-16 2020-04-16 Led-übertragungsverfahren und damit hergestelltes anzeigemodul

Country Status (3)

Country Link
EP (1) EP3874540A4 (de)
KR (1) KR102867050B1 (de)
CN (1) CN113348542B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102462844B1 (ko) * 2020-12-22 2022-11-04 주식회사 셀코스 반도체 칩 전사 장치 및 이를 이용한 반도체 칩 전사 방법
CN115513244A (zh) * 2021-06-23 2022-12-23 重庆康佳光电技术研究院有限公司 临时基板、发光二极管芯片的转移方法及显示组件
CN115148864A (zh) * 2022-06-30 2022-10-04 上海天马微电子有限公司 Micro LED的转移方法、显示面板及其制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160190105A1 (en) * 2013-08-20 2016-06-30 Lg Electronics Inc. Display device using semiconductor light emitting device
US20180068995A1 (en) * 2016-09-07 2018-03-08 Ultra Display Technology Corp. Optoelectronic semiconductor device and manufacturing method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003077940A (ja) * 2001-09-06 2003-03-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
KR20060098307A (ko) * 2005-03-11 2006-09-18 삼성전자주식회사 액정 표시 장치 및 그 제조 방법
JP4605207B2 (ja) * 2007-11-15 2011-01-05 ソニー株式会社 素子転写方法
EP3387882B1 (de) * 2015-12-07 2021-05-12 Glo Ab Laserabhebung auf isolierten iii-nitrid-lichtinseln für den led-transfer zwischen substraten
WO2017142877A1 (en) * 2016-02-16 2017-08-24 Glo Ab Method of selectively transferring led die to a backplane using height controlled bonding structures
DE102016221533B4 (de) * 2016-11-03 2018-09-20 Mühlbauer Gmbh & Co. Kg Verfahren und Vorrichtung zum Transfer elektronischer Komponenten von einem Trägersubstrat auf ein Zwischenträgersubstrat
US10089908B2 (en) * 2017-02-21 2018-10-02 Shenzhen China Star Optoelectronics Technology Co., Ltd Micro light-emitting diode display panel and manufacturing method
CN107017319A (zh) * 2017-05-23 2017-08-04 深圳市华星光电技术有限公司 彩色微发光二极管阵列基板的制作方法
JP6720333B2 (ja) * 2017-06-12 2020-07-08 ユニカルタ・インコーポレイテッド 基板上に個別部品を並列に組み立てる方法
KR101900925B1 (ko) * 2017-11-20 2018-09-21 엘지디스플레이 주식회사 마이크로 발광 다이오드 칩을 갖는 성장 기판, 및 이를 이용한 발광 다이오드 표시장치 제조 방법
CN108962789A (zh) * 2018-06-25 2018-12-07 开发晶照明（厦门）有限公司 微器件转移方法和微器件转移设备
CN109326549B (zh) * 2018-09-19 2020-07-28 京东方科技集团股份有限公司 一种微发光二极管的转移方法、显示面板及其制备方法
CN109524512B (zh) * 2018-11-15 2020-07-03 华中科技大学 基于可控微反射镜阵列的微型发光二极管巨量转移方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160190105A1 (en) * 2013-08-20 2016-06-30 Lg Electronics Inc. Display device using semiconductor light emitting device
US20180068995A1 (en) * 2016-09-07 2018-03-08 Ultra Display Technology Corp. Optoelectronic semiconductor device and manufacturing method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020213937A1 *

Also Published As

Publication number Publication date
EP3874540A1 (de) 2021-09-08
KR102867050B1 (ko) 2025-10-13
CN113348542B (zh) 2025-11-21
KR20200121714A (ko) 2020-10-26
CN113348542A (zh) 2021-09-03

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