Classifications

• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
  • H05B45/40—Details of LED load circuits
  • H05B45/44—Details of LED load circuits with an active control inside an LED matrix
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
  • H05B45/10—Controlling the intensity of the light
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
  • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
  • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
  • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
  • F21S41/141—Light emitting diodes [LED]
  • F21S41/151—Light emitting diodes [LED] arranged in one or more lines
  • F21S41/153—Light emitting diodes [LED] arranged in one or more lines arranged in a matrix
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
  • F21S43/00—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
  • F21S43/10—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source
  • F21S43/13—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source characterised by the type of light source
  • F21S43/15—Strips of light sources

Definitions

• the invention relates to matrix light sources with electroluminescent semiconductor elements, in particular for motor vehicles.
• the invention relates to a matrix light source with gradation of the emitted light intensity.
• a light emitting diode is a semiconductor electronic component capable of emitting light when it is traversed by an electric current.
• LED technology is increasingly used for various light signaling solutions. LEDs are used to perform light functions such as daytime running lights, signaling lights, etc.
• the light intensity emitted by an LED is generally dependent on the intensity of the electric current flowing through it.
• an LED is characterized by an electric current intensity threshold value. This maximum forward current is generally decreasing at increasing temperature.
• forward voltage By controlling the power supply of a light-emitting diode so as to vary the average intensity of the electric current flowing through it, it is possible to achieve dimming of the LED's light intensity.
• elementary light emitting is interesting in many fields of application, and in particular also in the field of lighting and signaling of motor vehicles.
• an array of LEDs can be used to create interesting light beam shapes for light functions such as high beam or daytime running light.
• several different light functions can be performed using a single matrix, thereby reducing the physical size in the confined space of a motor vehicle light.
• matrix light sources or, equivalently, pixelated, are controlled by a physically remote control unit and electrically connected to the light source.
• the principle of dimming the light intensity of an LED does not obviously extend to a matrix light source comprising a large number of pixels.
• the control unit should drive the electrical current for each pixel, generating at least one wired electrical connection per pixel.
• This solution is only unrealistic, especially in the field of automotive signaling, for which the volume available to make a light module is limited.
• the invention aims to overcome at least one of the problems posed by the prior art. More specifically, the invention aims to provide a matrix light source which allows a gradation of the light intensity emitted by each elementary light source which composes its matrix.
• a matrix light source comprising an integrated circuit and a matrix of elementary light sources with an electroluminescent semiconductor element.
• the matrix light source is remarkable in that the integrated circuit is in contact with the matrix and comprises, for at least two of the elementary light sources, a first memory element for storing a brightness instruction to be produced by said elementary light source, the setpoint corresponding to a brightness which is between the minimum and maximum brightness achievable by said elementary light source, and a circuit for managing the power supply of said elementary light source, configured to adapt the average intensity of the electric current flowing through said elementary light source so that the apparent brightness thereof complies with said instruction.
• an integrated circuit for a matrix light source is proposed.
• the integrated circuit is intended to be in mechanical and electrical contact with a matrix of elementary light sources of the matrix light source.
• the integrated circuit is remarkable in that it comprises, for at least two of the elementary light sources, a first memory element for storing a brightness instruction to be carried out by said elementary light source, the instruction corresponding to a brightness which lies between the minimum and maximum brightness achievable by said elementary light source, and a circuit for managing the power supply of said elementary light source, configured to adapt the average intensity of the electric current flowing through said elementary light source so that the brightness apparent of it is in accordance with said instruction.
• the matrix of elementary light sources may preferably comprise a common substrate supporting the elementary light sources.
• the common matrix substrate may preferably include SiC.
• Each light source can preferably be associated with its memory element and its power supply management circuit, the memory element and the management circuits associated with different elementary light sources being independent of each other.
• the integrated circuit may preferably comprise an Si substrate.
• the integrated circuit is welded or glued to the matrix of elementary light sources, for example to one with the common substrate supporting elementary light sources.
• the integrated circuit is preferably soldered or glued to the underside of the common substrate, opposite the face which comprises the elementary light sources.
• the integrated circuit is in mechanical contact, for example by means of fixing, and electrical contact with the common substrate, which has electrical connection zones on its underside.
• the integrated circuit may include a memory element and a dedicated power supply management circuit for each of the elementary light sources.
• the power supply management circuit may preferably comprise a switch element for selectively supplying said elementary light source with electricity, and a circuit for generating a binary control signal with pulse width modulation, the signal serving as a control for the switch element.
• the duty cycle and / or the amplitude of the control signal can preferably depend on the brightness setpoint.
• the management circuit can be configured to calculate the duty cycle of the control signal so as to correspond to a quantized value between 0 and 1, reflecting the value of the brightness setpoint to be achieved by said elementary light source, the setpoint corresponding to a brightness which is between the minimum and maximum brightness
• the substrate may further comprise, for at least one of the elementary light sources, a circuit for detecting a short circuit and / or a circuit for detecting an open circuit fault of said elementary light source and / or a unit for delaying the ignition of the elementary light source.
• the integrated circuit may further comprise at least a second memory element for recording information for detecting a short circuit and / or an open circuit fault of said elementary light source and / or of duration ignition delay.
• a light module comprises a control unit, a matrix light source and a circuit for controlling the electrical supply of said source.
• the light module is remarkable in that the control unit is configured to transmit a brightness setpoint for each elementary light source from the matrix light source to the latter, in that the matrix light source conforms to a aspect of the invention, and in that said brightness setpoints are recorded respectively in the memory elements associated with each of the elementary light sources.
• it may be a light module for a motor vehicle.
• it can be a module for projecting or viewing color images, such as a screen.
• Each shade corresponds to a predetermined brightness setpoint of a pixel / of an elementary light source of the source matrix.
• a method of projecting a color image using a matrix light source according to one of the aspects of the invention is proposed.
• the process is remarkable in that it includes the following stages:
• a digital image in shades at the level of a control unit, the dimensions in pixels of the image corresponding to the dimensions of the matrix source; generate and transmit by means of the control unit a brightness setpoint for each elementary light source from the matrix light source to the latter, the light setpoint for a given elementary light source being representative of the tint of the corresponding pixel of the digital image;
• the pixelated light source may preferably comprise at least one matrix of electroluminescent elements - elementary light sources - (called in English monolithic array) arranged in at least two columns by at least two lines.
• the electroluminescent source comprises at least one matrix of monolithic electroluminescent elements, also called monolithic matrix.
• the electroluminescent elements are grown from a common substrate and are electrically connected so as to be selectively activatable, individually or by subset of electroluminescent elements.
• each electroluminescent element or group of electroluminescent elements can form one of the elementary emitters of said pixelated light source which can emit light when its or their material is supplied with electricity
• Different arrangements of electroluminescent elements can meet this definition of monolithic matrix, since the electroluminescent elements have one of their main elongation dimensions substantially perpendicular to a common substrate and that the spacing between the elementary emitters, formed by one or more electroluminescent elements grouped together electrically, is low in comparison with the spacings imposed in known arrangements of flat square chips soldered on a printed circuit board.
• the substrate can be predominantly made of semiconductor material.
• the substrate may include one or more other materials, for example non-semiconductors.
• These electroluminescent elements are for example arranged projecting from the substrate so as to form rods of hexagonal section.
• the light-emitting sticks are born on a first face of a substrate.
• Each electroluminescent rod here formed by the use of gallium nitride (GaN), extends perpendicularly, or substantially perpendicularly, projecting from the substrate, here made from silicon, other materials such as silicon carbide which can be used without get out of the context of the invention.
• GaN gallium nitride
• the light-emitting sticks could be made from an alloy of aluminum nitride and gallium nitride (AlGaN), or from an alloy of aluminum phosphors, indium and gallium (AlInGaP).
• AlGaN aluminum nitride and gallium nitride
• AlInGaP aluminum phosphors, indium and gallium
• Each electroluminescent rod extends along an elongation axis defining its height, the base of each rod being arranged in a plane of the upper face of the substrate.
• the light-emitting sticks of the same monolithic matrix advantageously have the same shape and the same dimensions. They are each delimited by a terminal face and by a circumferential wall which extends along the axis of extension of the rod.
• the light-emitting rods are doped and are the subject of a polarization, the resulting light at the output of the semiconductor source is emitted essentially from the circumferential wall, it being understood that light rays can also emerge from the face terminal.
• each light-emitting stick acts as a single light-emitting diode and the luminance of this source is improved on the one hand by the density of the light-emitting sticks present and on the other hand by the size of the illuminating surface defined by the circumferential wall. and which therefore extends over the entire periphery, and the entire height, of the stick.
• the height of a stick can be between 2 and 10 pm, preferably 8 mih.
• the largest dimension of the end face of a rod is less than 2 pm, preferably less than or equal to 1 mih.
• the height can be modified from one zone of the pixelated light source to another, so as to increase the luminance of the corresponding zone when the average height of the rods constituting it is increased.
• a group of light-emitting sticks can have a height, or heights, different from one another group of light-emitting sticks, these two groups constituting the same semiconductor light source comprising light-emitting sticks of submillimetric dimensions.
• the shape of the light-emitting rods can also vary from one monolithic matrix to another, in particular on the section of the rods and on the shape of the end face.
• the rods have a generally cylindrical shape, and they can in particular have a shape of polygonal section, and more particularly hexagonal. We understand that it is important that light can be emitted through the circumferential wall, whether the latter has a polygonal or circular shape.
• the end face may have a substantially planar shape and perpendicular to the circumferential wall, so that it extends substantially parallel to the upper face of the substrate, or it may have a domed or pointed shape at its center. , so as to multiply the directions of emission of the light leaving this end face.
• the light-emitting sticks can preferably be arranged in a two-dimensional matrix. This arrangement could be such that the sticks are staggered. Generally, the sticks are arranged at regular intervals on the substrate and the separation distance of two immediately adjacent light-emitting sticks, in each of the dimensions of the matrix, must be at least equal to 2 ⁇ m, preferably between 3 and 10 hours. mhi, so that the light emitted by the circumferential wall of each rod can leave the matrix of light-emitting rods. Furthermore, it is expected that these separation distances, measured between two axes of extension of adjacent rods, will not be greater than 100 ⁇ m.
• the monolithic matrix may comprise electroluminescent elements formed by layers of epitaxial electroluminescent elements, in particular a first layer of GaN doped n and a second layer of GaN doped p, on a single substrate, for example made of silicon carbide, and which is cut (by grinding and / or ablation) to form a plurality of elementary emitters respectively from the same substrate.
• electroluminescent elements formed by layers of epitaxial electroluminescent elements, in particular a first layer of GaN doped n and a second layer of GaN doped p, on a single substrate, for example made of silicon carbide, and which is cut (by grinding and / or ablation) to form a plurality of elementary emitters respectively from the same substrate.
• the substrate of the monolithic matrix may have a thickness of between 5 ⁇ m and 800 ⁇ m, in particular equal to 200 ⁇ m; each block may have a length and a width, each being between 50 ⁇ m and 500 ⁇ m,
• each block is less than 500 ⁇ m, preferably less than 300 ⁇ m.
• each block can be made via the substrate on the side opposite to the epitaxy.
• the separation distance between two elementary transmitters can be less than 1 mm, in particular less than 500 mih, and it is preferably less than 200 mih.
• the monolithic matrix may comprise further a layer of a polymeric material in which the electroluminescent elements are at least partially embedded.
• the layer can thus extend over the entire extent of the substrate or only around a determined group of electroluminescent elements.
• the polymer material which can in particular be based on silicone, creates a protective layer which makes it possible to protect the electroluminescent elements without hampering the diffusion of the light rays.
• wavelength conversion means capable of absorbing at least part of the rays emitted by one of the elements and of converting at least part of said excitation light absorbed into emission light having a wavelength different from that of the excitation light. It is equally possible to provide that the phosphors are embedded in the mass of the polymer material, or that they are arranged on the surface of the layer of this polymer material.
• the pixelated light source may further include a coating of reflective material to deflect the light rays towards the exit surfaces of the light source.
• the electroluminescent elements of submillimetric dimensions define in a plane, substantially parallel to the substrate, a determined outlet surface.
• a determined outlet surface we understand that the shape of this exit surface is defined according to the number and arrangement of the elements
• the matrix light source comprises an integrated circuit which houses, potentially for each elementary light source, a memory element for storing therein a value which corresponds to a brightness intensity setpoint, and a management circuit of the power supply of the elementary light source.
• the power supply management circuit adapts the average intensity of the electric current, for example by means of a width modulation control signal pulse, PWM ("draw width modulation") for the elementary light source in question.
• PWM draw width modulation
• the brightness setpoint is the only external control which the circuit for managing the electrical supply of the elementary light source needs to control the elementary source. It therefore becomes possible to transmit a set of brightness instructions - in an equivalent manner: a digital image in shades - to the matrix source.
• the set value for each pixel is recorded in the integrated circuit which takes care of its production.
• a new setpoint is only necessary if the light intensity to be emitted by one of the pixels changes. Pixels with a constant light intensity do not need to receive continuous instructions.
• the invention finds its application in the field of automobile signaling, for which the formation of light beams having shapes and gradations of particular light intensities is facilitated.
• the invention also applies to screens produced with arrays of light-emitting diodes, or to image projectors produced with arrays of light-emitting diodes.
• the invention applies to a particular screen or projector, it is interesting to note that the volume of data transmitted from a control unit to the matrix light source is limited: for an image, at most one set full of setpoint values is to be transmitted once to the matrix light source. When only part of the image changes compared to a previous image, only the instructions for the pixels modified by the new image need to be transmitted to the matrix light source.
• Figure 1 schematically shows a matrix light source according to a preferred embodiment of the invention
• Figure 2 shows schematically a matrix light source according to a preferred embodiment of the invention.
• references 100 and 200 designate two embodiments of a matrix light source according to the invention.
• the illustration of Figure 1 shows a pixelated or matrix light source 100 according to a preferred embodiment of the invention.
• the matrix light source 100 comprises a plurality of elementary light sources with an electroluminescent semiconductor element 110 and a substrate common not shown, in mechanical and electrical contact with and functionally connected to an integrated circuit 120.
• the elementary light sources are typically light-emitting diodes, LEDs.
• the matrix light source 100 preferably comprises a monolithic matrix component, in which the semiconductor layers of the elementary light sources 110 are, for example, arranged on the common substrate.
• the matrix of elementary light sources 110 preferably comprises a parallel mounting of a plurality of branches, each branch comprising light emitting semiconductor light sources 110.
• the matrix of elementary light sources 100 comprises by way of example and without limitation, depending on the thickness of the substrate and starting at the end opposite to the location of the elementary sources 110, a first electrically conductive layer deposited on an electrically substrate insulating. It follows an n-doped semiconductor layer, the thickness of which is between 0.1 and 2 ⁇ m. This thickness is clearly less than that of known light-emitting diodes, for which the corresponding layer has a thickness of the order of 1 to 2 ⁇ m.
• the next layer is the active quantum well layer with a thickness of about 30 nm, followed by an electron blocking layer, and finally a p-doped semiconductor layer, the latter having a thickness of about 300nm.
• the first layer is a layer of (Al) GaN: Si
• the second layer a layer of n-GaN: Si
• the active layer comprises quantum wells in InGaN alternating with barriers in GaN.
• the blocking layer is preferably made of AlGaN: Mg and the p-doped layer is preferably made of p-GaN: Mg.
• the n-doped Galium nitride has a resistivity of 0.0005 Ohm / cm while the p-doped Galium nitride has a resistivity of 1 Ohm / cm.
• the thicknesses of the proposed layers make it possible in particular to increase the internal series resistance of the elementary source, while significantly reducing its manufacturing time, as the doped layer n is thinner compared to known LEDs and requires less deposition time important. For example, typically 5 hours of MOCVD deposition time is required for a standard configuration LED with 2m of layer n, and this time can be reduced by 50% if the thickness of layer n is reduced to 0.2 m.
• the monolithic component 100 is preferably manufactured by depositing the layers in a homogeneous and uniform manner on at least part of the surface of the substrate, so to cover it.
• the deposition of the layers is for example carried out by a process of epitaxy in the vapor phase with organometallics (“metal oxide Chemical vapor deposition”), MOCVD.
• organometallics metal oxide Chemical vapor deposition
• Such methods as well as reactors for their implementation are known to deposit semiconductor layers on a substrate, for example from patent documents WO 2010/072380 A1 or WO 01/46498 A1. The details of their implementation will therefore not be detailed in the context of the present invention.
• the layers thus formed are pixelated.
• the layers are removed by known lithographic methods and by etching at the locations which subsequently correspond to the spaces separating the elementary light sources 110 from one another on the substrate.
• a plurality of several tens or hundreds or thousands of pixels 110 of surface less than one square millimeter for each individual pixel, and of total surface greater than 2 square millimeter having semiconductor layers with homogeneous thicknesses, and therefore having homogeneous and high internal series resistances can be produced on the substrate of a matrix light source 100.
• the substrate comprising the epitaxial layers covering at least part of the surface of the substrate is sawn or cut into elementary light sources, each of the elementary light sources having similar characteristics in terms of their internal series resistance.
• the invention likewise relates to types of elementary light sources with semiconductor elements implying other configurations of semiconductor layers.
• the substrates, the semiconductor materials of the layers, the arrangement of the layers, their thicknesses and any vias between the layers may be different from the example which has just been described.
• the integrated circuit 120 is preferably soldered on the lower face of the common substrate, which houses the elementary light sources on its upper face, so as to establish mechanical and electrical contact with the substrate and the elementary light sources.
• the integrated circuit further comprises for at least two but preferably for all the elementary light sources 110, a dedicated memory or register element 136, produced for example by electronic circuits of the flip-flop type, for storing therein a brightness setpoint to be achieved by the elementary light source 110.
• the setpoint 12 corresponds to a degree of brightness which is between the minimum and maximum brightness achievable by said elementary light source.
• the integrated circuit 120 also includes an electronic circuit 130 for managing the electrical supply of the elementary light source in question.
• the circuit 130 is configured to adapt the average intensity of the electric current flowing through the elementary light source 110 so that the apparent brightness thereof complies with said instruction.
• an integrated circuit 120 in mechanical and electrical contact with the substrate on which the elementary light sources reside, makes it possible to dispense with wired connections, the number of which would be at least equal to the number of pixels of the matrix light source .
• a supply circuit can be integrated into the substrate during the manufacture of the monolithic component 100.
• the illustration of Figure 2 shows a pixelated or matrix light source 200 according to a preferred embodiment of the invention.
• the matrix light source 200 comprises a plurality of elementary light sources with an electroluminescent semiconductor element 210 and a common substrate, not illustrated, in contact with and functionally connected to an integrated circuit 220.
• the elementary light sources are typically light emitting diodes, LEDs .
• the integrated circuit 220 is preferably soldered on the lower face of the common substrate, which houses the elementary light sources on its upper face, so as to establish mechanical and electrical contact with the substrate and the elementary light sources.
• the integrated circuit further comprises for at least two but preferably for all the elementary light sources 210, a memory element or register 236, produced for example by electronic circuits of the flip-flop type, for storing therein a brightness setpoint at achieve by elementary light source 210.
• the setpoint 12 corresponds to a degree of brightness which is between the minimum and maximum brightness achievable by said elementary light source.
• the integrated circuit 220 also includes an electronic circuit 230 for managing the electrical supply of the elementary light source.
• the circuit 230 is configured to adapt the average intensity of the electric current flowing through the elementary light source 210 so that the apparent brightness thereof complies with said instruction.
• the matrix light source 200 illustrated for this embodiment is intended to be voltage-controlled by a circuit for controlling the power supply 10.
• Such circuits are per se known in the art and their operation will not be described in detail in the context of the present invention. They involve at least one converter circuit capable of converting an input voltage, supplied for example by a voltage source internal to a motor vehicle, such as a battery, into an output voltage, of intensity adapted to supply the source. bright matrix.
• the matrix light source is controlled in electric voltage, the control of each elementary source, or equivalent, of each pixel, is reduced to the control of a switch device 232 as shown diagrammatically in FIG. 2.
• the elementary light source 210 can be selectively connected to the voltage source 10.
• the switching device is for example produced by a MOSFET type field effect transistor preferably characterized by a drop in low voltage between its drain and source terminals, and controlled by a control signal 231 from the power management circuit 230.
• the control signal 231 is preferably a pulse width modulation signal, PWM (" draws width modulation ”). It is a cyclic binary signal.
• PWM draws width modulation
• the cyclic signal 231 forms a succession of binary commands to open / close the switch device 232.
• the average intensity of the electric current flowing through the elementary light source 210, and therefore the average light intensity emitted by this elementary light source reflects the average value of the control signal PWM 231.
• the power management circuit 230 comprises a circuit for generating a PWM type signal, configured so that the signal generated has an average value which reflects the brightness setpoint 12 recorded in the memory element 236 For example, for a maximum level of brightness, the duty cycle is set to the value 1: the switch 232 remains in its closed state and the light source 210 is continuously supplied. For brightness levels intermediate between the zero value and the maximum brightness, the duty cycle of the PWM signal, ie the ratio between the total duration of the “on” phase during a cycle, and the total duration of the cycle, is chosen. so as to correspond substantially to a quantization between 0 and 1 of the brightness setpoint 12.
• the setpoint 128 will be quantified by a quantization unit at the value 0.5. This will therefore correspond to a control signal 231 having a duty cycle equivalent to 0.5.
• Electronic circuits capable of generating parameterized PWM signals are in themselves known in the art and their operation will not be described in detail in the context of the present invention.
• the management circuit 230 further comprises a circuit for raising the level of the signal 231 (“level shifter”), which allows the maximum amplitude of the binary signal PWM 231 at the required voltage level.
• the integrated circuit preferably comprises a signal reception unit 12, which makes it possible to extract the brightness setpoint therefrom, and to save it in the memory element 136, 236,
• the integrated circuit can include other electronic circuits and / or memory elements used for other functions related to the matrix light source and / or to the elementary light sources. This includes but is not limited to circuits for detecting a short circuit, or an open circuit fault of an elementary light source.
• a projection process includes the following steps:
• a digital image in shades at a control unit, the dimensions in pixels of the image corresponding to the dimensions of the matrix source; generating and transmitting by means of the control unit a brightness setpoint for each elementary light source from the matrix light source to the latter, the light setpoint for a given elementary light source being representative of the tint of the corresponding pixel of the digital image;

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• Led Devices (AREA)
• Circuit Arrangement For Electric Light Sources In General (AREA)
• Lighting Device Outwards From Vehicle And Optical Signal (AREA)

Applications Claiming Priority (2)

Publications (1)

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Country Status (6)

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• 2018
  • 2018-09-28 FR FR1859027A patent/FR3086723B1/fr not_active Expired - Fee Related
• 2019
  • 2019-09-25 EP EP19773091.4A patent/EP3857117A1/fr not_active Withdrawn
  • 2019-09-25 US US17/280,559 patent/US20210345466A1/en not_active Abandoned
  • 2019-09-25 WO PCT/EP2019/075838 patent/WO2020064823A1/fr unknown
  • 2019-09-25 CN CN201980063288.8A patent/CN112789950A/zh active Pending
  • 2019-09-25 JP JP2021517206A patent/JP2022501781A/ja active Pending

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