EP3827311A1 - Procédé de réalisation d'une structure présentant au moins un motif courbe - Google Patents
Procédé de réalisation d'une structure présentant au moins un motif courbeInfo
- Publication number
- EP3827311A1 EP3827311A1 EP19742219.9A EP19742219A EP3827311A1 EP 3827311 A1 EP3827311 A1 EP 3827311A1 EP 19742219 A EP19742219 A EP 19742219A EP 3827311 A1 EP3827311 A1 EP 3827311A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- reliefs
- base layer
- substrate
- pattern
- front face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 238000000034 method Methods 0.000 claims abstract description 96
- 239000000463 material Substances 0.000 claims abstract description 46
- 229920000642 polymer Polymers 0.000 claims abstract description 29
- 239000011521 glass Substances 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims description 36
- 239000011159 matrix material Substances 0.000 claims description 33
- 230000008021 deposition Effects 0.000 claims description 20
- 238000007639 printing Methods 0.000 claims description 15
- 238000011049 filling Methods 0.000 claims description 14
- 238000012546 transfer Methods 0.000 claims description 11
- 239000004033 plastic Substances 0.000 claims description 9
- 229920003023 plastic Polymers 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000009477 glass transition Effects 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 158
- 230000008569 process Effects 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000004377 microelectronic Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008092 positive effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000000181 anti-adherent effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000003190 viscoelastic substance Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00365—Production of microlenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/009—Manufacturing the stamps or the moulds
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0031—Replication or moulding, e.g. hot embossing, UV-casting, injection moulding
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/02—Simple or compound lenses with non-spherical faces
- G02B3/04—Simple or compound lenses with non-spherical faces with continuous faces that are rotationally symmetrical but deviate from a true sphere, e.g. so called "aspheric" lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
- G02B2207/101—Nanooptics
Definitions
- the invention generally relates to the production of structures of micrometric or nanometric size, to form micro-electronic, optical or optoelectronic devices, as well as micromechanical or electromechanical devices.
- An advantageous application of the invention relates to the field of methods for manufacturing a matrix (or "master" according to English terminology) for the manufacture of at least part of a nano-impression mold.
- the invention finds for particularly advantageous application the manufacture of a matrix to form molds or mold parts, with a view to molding aspherical microlenses, advantageously with low or even very low curvature.
- These microlenses can themselves be intended for light collection, imaging and light guiding applications, for example in transmission or reflection.
- An advantageous application of the invention relates to the field of methods of manufacturing at least part of a nano-impression mold.
- Another application of the present invention consists in manufacturing a microlens directly, if necessary without using any one of a mold part and a matrix.
- microlenses There are many techniques for making microlenses.
- micro-jet printing and thermal creep are now very advanced techniques which are used in industry to produce high optical quality microlenses. These techniques are more qualitative than quantitative when it comes to achieving a precise surface profile. For example, thermal creep of photo-resin (Cf. for example the article by NT Gordon et al., Entitled “Application of microlenses to infrared detector arrays", in the journal Infrared Phys., 30, 6, 599-604 , 1991) and micro-jet printing are based on delicate physicochemical phenomena involving a balancing of the surface tensions involved, which greatly limits the choice of surface profiles potentially obtained by these techniques.
- microlenses are increasingly used to produce microlenses.
- the manufacturing principle is to fill a mold with a material (typically a polymer) and to detach the material from the mold.
- the microlenses potentially obtained in this way can be of hemispherical or spherical shape.
- the applications may relate, respectively, to the field of wavelengths of infrared (IR) or that of visible light.
- FIGS. 1A, 1 B and 1 C represent sectional views illustrating certain steps of the method.
- a layer 1001 of silicon thermal oxide (Si02) or silica is deposited on a silicon wafer or “wafer” 1000 of the type of those commonly used by the microelectronics industry, that is to say a wafer of large diameter silicon, for example with an 8 inch diameter
- a layer 1002 of silicon nitride (Si3N4) for example with a thickness of 350 nanometers, is deposited on the layer 1001 of thermal oxide.
- a pattern 1003 is etched in the layer 1002 of nitride by conventional lithography steps.
- the layer 1002 of nitride playing the role of hard mask the plate is immersed in a wet etching solution; a solution of hydrofluoric acid (HF) is particularly suitable here.
- a solution of hydrofluoric acid (HF) is particularly suitable here.
- the nitride mask 1002 protects the areas of the plate where the etching solution must not attack the thermal oxide 1001.
- the etching of the layer 1001 of thermal oxide is isotropic, thus forming a cavity in the form of a portion of a sphere centered on the pattern 1003.
- the nitride mask 1002 is removed and, after an anti-adhesive treatment, the plate obtained 1004 can be used as a mold for printing.
- the relief patterns of the mold can be created directly in the silicon 103 without using the intermediate layer of silica 102.
- the etching solution is a mixture of hydrofluoric acid (HF) and nitric acid (HN03) as reported in 2009 in an article published in the English language journal Optics Express, Volume 17, Edition 8, pages 6283 to 6292 (2009).
- An object of the present invention is therefore to propose a method for producing a structure having at least one curved pattern which makes it possible to limit, or even eliminate, at least some of the problems set out above.
- the present invention provides a method for producing a structure having at least one pattern, for example for manufacturing a matrix for a nano-impression mold, the method comprising the following steps:
- a part is structured by at least a plurality of reliefs, the reliefs of each plurality defining between them at least one space, preferably at least two spaces, and
- a base layer preferably of uniform thickness, of a material based on one of a polymer and a glass, on the front face of the substrate, at least in line with the reliefs, or even in line with the whole front of substrate, the base layer having a first face opposite the front face of the substrate and a second face opposite the first face, and
- the base layer is thus deformed so that its second face forms a structure having at least one curved pattern in line with the at least one space at least partially filled with the material of the base layer.
- the free surface of the base layer is deformed due to the at least partial filling of the spaces between the reliefs of each plurality.
- the volume of material displaced in particular in relief of the reliefs during the deformation of the base layer is at most equal to the volume of the spaces defined between the reliefs.
- the pattern thus formed may advantageously have an aspherical curvature, preferably small ( ⁇ 10 2 pm 1 ), or even very slight ( ⁇ 10 6 pm 1 ).
- the method according to the invention it is possible to manufacture a nano-impression mold.
- This mold can then be used for molding microlenses which have an aspherical curvature, preferably low ( ⁇ 10 2 pm 1 ), or even very weak ( ⁇ 10 6 prrf 1 ).
- the manufacturing process as introduced above is advantageously simple, rapid, operable in a single series of steps on the scale of a wafer (or “wafer” according to English terminology), and compatible with standard microelectronics techniques.
- Another aspect of the present invention relates to a method for manufacturing at least one nano-impression mold using a matrix produced by implementing the method as introduced above.
- the present invention provides for the use of a matrix manufactured by implementing the method as introduced above, for the manufacture of at least one nano-impression mold.
- Another aspect of the present invention relates to a method of manufacturing at least one microlens by nano-printing, using a nano-printing mold produced by transfer of at least one pattern from a matrix produced by setting work of the process as introduced above.
- the present invention provides for the use of a nano-impression mold manufactured by transfer of at least one pattern from a matrix manufactured by implementing the method as introduced above, for the manufacture of at least one microlens by nano-printing.
- Another aspect of the present invention relates to a method for manufacturing at least one nano-impression mold part manufactured by implementing the method as introduced above.
- the present invention provides for the use of the nano-impression mold part manufactured by implementing the method as introduced above, for the manufacture of at least one microlens by nano-impression from said part.
- Another aspect of the present invention relates to a method for manufacturing a lens, or microlens, by implementing the method as introduced above.
- This other aspect of the invention is particularly advantageous for applications in reflective optics.
- provision may indeed be made to make the polymer, based on which the base layer is made, reflective by depositing on the polymer, at low temperature, a thin layer of metal or dielectric, so as to optimize the reflection. .
- FIGURES 1 A, 1 B and 1 C schematically represent certain steps of a process for manufacturing a mold for printing microlenses according to the prior art.
- FIGURE 2 schematically represents a sectional view of a microlens such as the present invention aims to allow to manufacture.
- FIGURES 3A to 3I schematically represent different views in section illustrating the steps of the process for manufacturing a concave pattern according to an embodiment of the invention.
- FIGURES 4A-4D schematically represent some of the different steps of the process for manufacturing a convex pattern according to an embodiment of the invention.
- FIGURES 5A and 5B each schematically represent a perspective view of at least part of the structured substrate according to an embodiment of the invention.
- FIGURE 6 is a flowchart of the method for producing a structure according to an embodiment of the invention.
- FIGURES 7A, 7B and 7C schematically represent a first exemplary embodiment of the method for producing a structure according to the invention.
- FIGURE 8A schematically represents a second embodiment of the method for producing a structure according to the invention comprising two patterns.
- FIGURE 8B represents a graph showing the profiles of the two patterns from the second embodiment and measured by a stylus.
- the deformation is viscoelastic; it can also be plastic, in particular for a base layer 5 comprising a polymer. Plastic deformation of the polymer of the base layer can actually be obtained, for example by pressurizing the assembly, so as to induce stresses and pass beyond the plasticity threshold of the polymer;
- the deposition of the base layer can be carried out under vacuum, and the step of at least partially filling the at least one space defined between the reliefs of the same plurality can be carried out at ambient pressure, preferably under a flow compressed air or nitrogen;
- the base layer being further deformed so that the distance from the second face of the base layer to the bottom of the reliefs of each plurality is always less than this distance before deformation;
- the number, the shape and the spatial distribution of the reliefs are configured at least as a function of viscoelastic or plastic parameters of the base layer and of deposition parameters of the base layer.
- a determined curvature of the pattern is thus obtained. It is thus advantageously offered by the method according to the invention to obtain an almost infinite variety of patterns curves by varying parameters that are otherwise well, or even perfectly, controlled;
- the step of at least partially filling the at least one space defined between the reliefs of the same plurality can comprise the following step: Completely filling each space until generating a pattern whose curvature is determined by balancing of tensions If the evolution of the pattern is relatively predictable and the voluntary cessation of this evolution relatively well controlled, this still complicates the process. It is advantageously simpler to let the base layer creep until the equilibrium shape of the curved pattern is obtained;
- the step of at least partially filling the at least one space defined between the reliefs of the same plurality may include a rise in temperature, at least 10 °, preferably between 10 and 40 ° C, above the glass transition temperature Tg of the material on the basis of which the base layer consists of at least a plurality of reliefs can define at least one cavity formed in the front face of the substrate.
- the curved pattern thus formed can be concave;
- the at least a plurality of reliefs can comprise a mesa formed on the front face of the substrate and the at least one space can comprise at least one cavity formed in the mesa;
- the at least a plurality of reliefs may include at least one relief projecting from the front face of the substrate.
- the pattern thus formed may be convex;
- the process can include, where appropriate, the following step: allowing the material of the base layer situated at the level of the part of the front face of the substrate which is free of reliefs to come into contact with at least part of the face front of the substrate.
- the method further comprises the following step: allowing the material of said base layer situated at right angles to a part of the front face of the substrate free of reliefs to fill at least partially at least one second space, preferably each second space, each second space being larger, for example at least ten times larger, than the at least one space defined between the reliefs of the same plurality;
- At least a plurality of reliefs can be formed by at least one etching step, for example by photolithography, of the front face of the substrate;
- the method can also comprise, once said at least one pattern has been formed, the following step: Rigidize, at least on the surface, the base layer,
- the stiffening step comprising, where appropriate, one corresponding from:
- the method can also comprise, once said at least one pattern has been formed, the following steps:
- the matrix is thus advantageously ready to be used in order to obtain a mold, in particular by stages comprising the grafting on the finishing layer of non-stick layers and the transfer of the pattern in transfer layers generally composed of organic elements and intended forming an intermediate mold;
- the at least a plurality of reliefs can define a cavity and / or comprise a relief having at least one of:
- a depth or a height greater than 10 ⁇ m, preferably greater than 100 ⁇ m, for example equal to 180 ⁇ m, and
- o at least one transverse dimension between 20 and 200 pm, preferably between 50 and 100 pm.
- At least one relief of each plurality preferably has at least one size dimension less than 1 mm;
- At least one space defined between the reliefs of each structured part of the front face of the substrate can take one of:
- the at least one space defined between the reliefs of each structured part of the front face of the substrate occupies at least half of the surface of this part structured.
- a distance between two reliefs adjacent to each other, or even between each pair of adjacent reliefs between them, is provided which is at least equal to a smaller transverse dimension of at least one relief of plurality;
- the step of depositing the base layer can be configured so that the base layer has, preferably before its deformation, a thickness of between 20 and 200 ⁇ m;
- the step of depositing the base layer may include one of the steps from: o depositing a dry film by lamination, and
- the at least one plurality of reliefs comprises several pluralities of reliefs spaced apart by the part of the front face of the substrate which is free of reliefs, each plurality of reliefs being intended for the formation of a pattern, and preferably of a single motif;
- At least one of the part of the front face of the substrate free of reliefs and the step of depositing the base layer can be configured so that the deformation of the base layer at the level of each plurality of reliefs does not not influence the deformation of the base layer at any other plurality of reliefs;
- the structure can be a matrix for producing a nano-impression mold; as a first alternative, the structure can be a part of a nano-impression mold; as a second alternative, the structure can be a lens.
- the term “on”, “overcomes”, “covers” or “underlying” or their equivalents does not necessarily mean “in contact with”.
- the deposition of a first layer on a second layer does not necessarily mean that the two layers are directly in contact with each other but it means that the first layer at least partially covers the second layer in being either directly in contact with it, or being separated from it, for example by at least one other layer or at least one other element.
- the thickness of a layer, as well as the depth or the height of a cavity or of a relief is taken in a direction perpendicular to a front face of a substrate on which the layer rest or at level of which the cavity or relief is formed.
- the thickness, the height and the depth are thus taken in a direction perpendicular to the main plane in which the substrate and the layer extend.
- the thickness, the height and the depth are taken in the direction Z as illustrated in FIG. 3; and any transverse dimension, for example that of a pattern, a cavity or a relief is taken in a direction X, as illustrated in FIG. 3, perpendicular to the direction Z.
- pattern denotes a local variation of a free surface of a base layer having an analog profile, that is to say with a continuous variation of the tangents of the shape of the profile, as illustrated for example in FIGS. 2, 3C, 3D, 3I, 4C, 4D, 7A, 7C and 8B.
- nanoprinting means any lithography technique in which a hard mold is applied to the surface of a material, in order to leave there, in a resin, or equivalent polymer, the imprint of a structure of micrometric or even nanometric size.
- matrix an element bearing an imprint or pattern which is found in negative in a mold obtained by direct copy of the matrix.
- the matrix has at least one pattern which is reproduced in negative in the mold.
- the mold is then used to transfer this negative into another layer, for example to form a microlens.
- the pattern formed in this other layer corresponds to the negative of the pattern carried by the mold.
- the pattern carried by the same mold is transferred in a very large number of layers.
- a film or a layer based on a material A is understood to mean a film or a layer comprising this material A and possibly other materials.
- a layer of “uniform” thickness is understood to mean a layer having a constant thickness in a direction perpendicular to the tangent at each point of one of its two main faces.
- the term “conforming” is understood to mean a layer geometry which has the same thickness, except for manufacturing tolerances, despite the changes in layer direction, for example at the sides of a pattern.
- “Microlens” is understood to mean a small lens, generally with a diameter of less than 5 mm, or even less than or equal to 2 mm, and which can reach ten micrometers, and one of the dimensions of which (diameter or arrow) is less at 1 mm.
- the present invention can make it possible to manufacture, directly or indirectly, microlenses such as that 10 illustrated in FIG. 2.
- Each microlens 10 thus produced can advantageously have an aspherical curvature 11, and in particular a low curvature ( ⁇ 10 2 pm 1 ), or even very weak ( ⁇ 10 6 pm 1 ), curvature. More particularly, it has a transverse dimension D greater than 10 ⁇ m and less than 5 mm, for example equal to 2 mm, for an arrow f greater than 1 ⁇ m and less than 300 ⁇ m, for example equal to 100 ⁇ m.
- the deflection f is measured in a direction perpendicular to the transverse dimension of the microlens. Typically, f and D are measured along the Z and X axes respectively.
- Each microlens 10 can further comprise extensions 12, situated on either side or around the curvature 11. These extensions 12 can serve, where appropriate, as alignment marking zones. As will appear later, these extensions 12 advantageously come naturally from the implementation of the method according to the invention and therefore do not require any particular additional treatment to be carried out.
- This first embodiment describes in particular a manufacturing process 100 for a matrix 1 for a nano-printing mold, but it is understood that the description given below also applies mutatis mutandis to describe a manufacturing process 100 of a part of a nano-impression mold and / or a method of manufacturing 100 of a lens.
- These three versions of the process for producing a structure 1 having at least one curved pattern 6 indeed provides, for the first, the production of a matrix for a nano-impression mold as structure 1, for the second, the production of a part of a nano-impression mold as structure 1, and, for the third, production of a lens as structure 1.
- the manufacturing method 100 of the matrix 1 for a nano-impression mold firstly comprises a step consisting in supplying 110 with a structured substrate 2.
- the substrate 2 is for example based on a material chosen from: silicon, germanium, glass, silicon nitride, etc. More generally, the substrate 2 is chosen from a material which on the one hand can be structured in the manner described below and which on the other hand withstands the temperatures and other stresses undergone during the implementation of the method according to the invention. This latter constraint is not highly limiting since the temperatures to which the substrate 2 will be subjected during the method 100 according to the invention are generally not necessarily high. Typically, for a pattern created on the basis of a layer of polymer, such as a resin, the temperatures to which the substrate is subjected do not exceed 400 ° C.
- the substrate comprises a wafer (or "wafer” according to English terminology) in silicon, which may have a diameter of eight inches, or even more.
- a wafer or "wafer” according to English terminology
- such a slice advantageously offers a sufficient working surface to manufacture several dies in a single implementation of the method according to the invention.
- the substrate 2 comprises a front face 20 structured, in part and preferably only in part.
- the front face 20 of the substrate comprises, or is made up of, at least one structured part 21 and another unstructured part 22.
- Each structured part 21 comprises a plurality of reliefs 3 which define spaces between them 4.
- several structured parts 21 can be provided each comprising a plurality of reliefs 3 which is specific to it.
- the other part 22 of the front face 20 of the substrate 2 is free of reliefs. It is preferably substantially planar.
- each occupying a structured part 21 of the front face 20 of the substrate 2 the other part 22 of the front face 20 can extend in one piece around each structured part 21 and around the assembly formed by the plurality of structured parts.
- each structured part can be surrounded on all sides by a part 22 of the front face 20 of the substrate 2 which is free of reliefs.
- At least two pluralities of reliefs 3 structuring the front face of the substrate define between them second spaces.
- Each second space is larger, for example at least ten times larger, than the space defined between the reliefs 3 of the same plurality.
- the structuring of the front face 20 of the substrate 2 is preferably carried out using methods known from microelectronics, such as photolithography, and more particularly the methods of microelectronic fabrication of deep reliefs (for example hard mask and method Bosch®).
- the structuring of the front face 20 of the substrate 2 comprises the formation of a plurality of reliefs 3, 31 forming between them cavities 41 in the front face 20 of the substrate.
- the invention is not limited to this method of structuring the front face of the substrate.
- Each cavity 41 can have a height, or more particularly here a depth, greater than 10 ⁇ m, preferably greater than 100 ⁇ m.
- Each cavity 41 can also have at least one transverse dimension of between 20 and 200 ⁇ m, preferably between 50 and 100 ⁇ m.
- Each cavity 41 can take the form of a hole, for example of circular section; in which case, the transverse dimension of the cavity 41 corresponds to its diameter. When a cavity 41 forms a hole, the latter may or may not pass through.
- each cavity 41 can take other forms, such as the shape of a hole of oblong or polygonal cross section, for example rectangular or square, the shape of a groove closed or not on itself and crossing or not at least one other groove.
- the plurality of reliefs 3 as illustrated in FIG. 3A can conceptually comprise a plurality of reliefs 31, as well as, on either side of the plurality of reliefs 31, reliefs 32 extending to the edge of the substrate 2 or to another plurality of reliefs.
- the reliefs 31 as illustrated in FIG. 3A have dimensions substantially equal to those of the cavities 41 mentioned above. If the invention is not limited to this embodiment, it is however preferred that the reliefs 31 are at least of a size guaranteeing them sufficient mechanical strength. Thus, the reliefs 31 preferably have transverse dimensions between 20 and 200 ⁇ m, preferably between 50 and 100 ⁇ m. Furthermore, their height can be limited only by the thickness of the substrate 2.
- the structuring of the front face 20 of the substrate 2 may be configured so that the spaces 4, 41 (and 42, see Fig. 4A) defined between the reliefs 31 of each plurality are not not extend over less than half the surface of the corresponding structured part 21.
- This constraint is generally respected if, for the same plurality of reliefs 3, the structuring of the front face of the substrate 2 includes the provision of a distance between two reliefs adjacent to each other, or even between each pair of reliefs adjacent to each other, such as said distance is at least equal to a smaller transverse dimension of at least one relief of the plurality.
- the manufacturing method 100 comprises a step consisting in depositing 120 on the front face 20 of the substrate 2 a base layer 5.
- this base layer 5 is formed from a material based on one of a polymer, such as a resin, and a glass.
- a polymer and a glass have in common that they can be viscoelastically deformed, in particular when they are brought above their glass transition temperature T g .
- Glass generally more rigid than a polymer, will be preferred for the production of patterns 6 of lower curvature.
- Other materials can possibly be envisaged which are known to be deformable in this way, and in temperature ranges compatible with the preservation of the integrity of the substrate 2.
- the base layer 5 is more particularly deposited at least in line with the reliefs 3 of each plurality; it preferably extends beyond for reasons which will be explained below when we introduce the concept of mesh size.
- the base layer 5 can extend in line with the entire front face 20 of the substrate 2.
- the deposition 120 of the base layer 5 is produced so that, at least before its deformation, the base layer 5 has a thickness for example between 20 and 200 ⁇ m.
- the base layer 5 as deposited 120 and before its deformation, be uniform; its thickness is constant over its entire extent, except for manufacturing tolerances.
- the shape of the pattern 6 formed can be better, or more easily, controlled, insofar as it is then not necessary to integrate into the process according to the invention, the management of the influence which would have, on the shape of the pattern 6 formed, a non-uniformity, and in particular a variation in thickness, of the base layer 5 as deposited 120.
- the deposition step 120 of the base layer 5 can comprise one or other of the following steps:
- the deposition 120 of the base layer 5 can therefore be advantageously carried out by well known and controlled deposition techniques, and of industrial efficiency, making it possible in particular to treat all of the front face 20 of the substrate at once.
- the deposition 120 of the base layer 5 by deposition of a dry film by rolling is preferably carried out under vacuum.
- Different dry films based on different polymers are today marketed which can be used according to the manufacturing method 100 of the invention. We cite for example: the MX5000 TM series from DuPont TM or the film A2023 from Nagase Gmbh.
- the manufacturers of such films generally characterize the parameters which are of interest for the implementation of the method according to the present invention, such as their viscoelastic parameter (s), their parameter (s) of deposit and their thickness.
- the aforementioned deposition techniques can, by their sole embodiment, bring the base layer 5 under temperature or even pressure conditions, allowing it 130 to deform, in particular viscoelastically, following deposition 120, or even including during deposition 120 .
- At least the base layer 5 it is envisaged to subject at least the base layer 5 to a sufficient temperature, or even to a controlled surrounding pressure, to induce its viscoelastic deformation, or even also its plastic deformation.
- the base layer 5 is either deposited solid, before being heated, or deposited "hot".
- the torque [temperature T, time f] of deformation of the base layer 5 is chosen so as to allow the spaces 4 to be filled, if necessary partially.
- the higher the temperature, the shorter the filling time, this time can vary from 1 min to a few hours, even 1 day or a few days.
- a temperature at least 10 ° above the glass transition temperature Tg to induce viscoelastic deformation).
- a temperature T will be chosen between 10 and 40 ° C above the glass transition temperature Tg, but it is possible to go beyond it insofar as there is no degradation of the material of the base layer 5 and / or substrate.
- the step of depositing 120 of the base layer 5 and the step of allowing 130 the material of the base layer 5 to fill at least partially at least one of the spaces 4, preferably all the spaces, defined between the reliefs of the same plurality by at least viscoelastic deformation of the base layer 5, can be produced under different pressure conditions between them. More particularly, while the deposition step 120 is preferably carried out under vacuum, step 130 can for its part be carried out at a higher pressure, and in particular at ambient pressure. This step 130 can be performed under a flow of compressed air or nitrogen. Thus, an air pressure differential between the second face 50 of the base layer 5, this second face 50 defining the free surface of the base layer 5, and the first face of the base layer 5 located opposite the front face 20 of the substrate 2 is created. This differential assists the viscoelastic deformation of the free surface 50 of the base layer 5.
- the step consisting in allowing 130 the material of the base layer 5 to fill at least partially at least one of the spaces 4, preferably all the spaces, defined between the reliefs 3 of the same plurality by at least viscoelastic deformation of the base layer 5 may or may not require a positive action (a rise in temperature in particular). This necessity or its absence is to be determined at least as a function of the viscoelastic parameters, the deposition parameters and the thickness of the base layer 5. When no positive action is required, it is sufficient to let the base layer 5 as deposited 120 evolve freely and naturally for a certain time.
- the temperatures to be considered are between -20 ° C and 400 ° C, and more particularly between 20 ° C and 200 ° C, for polymers. They are between 300 ° C and 700 ° C for glasses (depending on their composition). It should also be noted that the shape of the pattern 6, before reaching the equilibrium of the surface tensions involved, changes over time very much depending on the temperature to which the base layer 5 is subjected: generally, more the higher the temperature, the faster the change in the shape of the pattern 6.
- the filling of the spaces 4 defined between the reliefs of the plurality of reliefs 3 structuring the front face 20 of the substrate 2 is linked to the deformation, in particular viscoelastic, of the base layer 5, which flows in the spaces 4 left free between reliefs 3.
- FIG. 3C represents a situation in which the base layer 5 has flowed so as to partially fill each of the cavities 41. It is illustrated in this figure that the direct consequence of this filling is a continuous deformation of the face (or free surface) 50 of the base layer 5 opposite to that located opposite the substrate 2.
- This continuous deformation of the free surface 50 of the base layer 5 comprises a pattern 6 which is curved at least in line with the reliefs 31. It is this pattern 6 , the shape of which advantageously has an aspherical curvature, weak, even very weak. It is also this pattern 6 which ultimately defines the shape and the curvature 11 of the microlens 10 such as that illustrated in FIG. 2.
- the free surface 50 of layer 5 must remain continuous; its deformation must not lead to its rupture. To ensure this, the thickness of the layer 5, the temperature to which it is brought to deform and / or the time which is left to the base layer 5 to deform are all parameters to be taken into consideration.
- the shape, and in particular the arrow f (or the depth), of the pattern 6 formed depends on the filling rate of the spaces 4. It is possible to observe the deformation of the free surface 50 of the base layer 5 so as to interrupt it when this deformation has led to generating a pattern 6 of the desired shape. It is also possible to allow the material of the base layer 5 to flow so that it completely fills the spaces 4. In this case, the thickness of the base layer 5 as deposited must be sufficient relative to the volume represented by the spaces 4.
- the free surface 50 of the layer 5 takes a particular and stable shape whose curvature is determined by the surface tensions involved.
- the curvature of the pattern 6 formed depends at least on the viscoelastic, or even plastic, parameters of the base layer 5. In a To some extent, these parameters in turn depend on the deposition parameters of the base layer 5.
- the number, the shape and the spatial distribution of the reliefs 3 are to be configured at least as a function of the viscoelastic, or even plastic, parameters and of the deposition parameters of the layer of base 5. It is the set of these parameters which determines the curvature of the pattern 6 formed whether it is stabilized or not.
- the base layer 5 can consist not of a single layer but of a stack of two or more layers of different materials chosen from among the glasses and polymers and whose properties among which at least one of their thickness and their glass transition temperature T g are different.
- T g glass transition temperature
- the base layer 5 can consist not of a single layer but of a stack of two or more layers of different materials chosen from among the glasses and polymers and whose properties among which at least one of their thickness and their glass transition temperature T g are different.
- T g glass transition temperature
- we can optimize, by simulation or empirically, the different process parameters: choice of materials, thickness of the layers, temperature and pressure, etc., to induce deformation.
- the least flowing layers will be placed (viscoelastic, or even viscous) at the bottom of the stack (ie on the side of the front face 20 of the substrate 2), and the more elastic layer or layers on top of the stack.
- the free surface 50 of the base layer 5 is sufficiently rigid or stiffened to maintain its shape.
- the free surface 50 of the base layer 5 is sufficiently rigid or stiffened to allow the subsequent manufacture of a mold.
- the stiffening step can comprise bringing the polymer, at least to the surface of the base layer 5, in a glassy, solid or rubbery state.
- the crosslinking of the polymer can be obtained either by application of a light flux, for example by UV (ultraviolet) treatment, or by heat treatment.
- the stiffening step can comprise bringing the glass, at least to the surface of the base layer, in a glassy state.
- the pattern 6 of the matrix 1 as manufactured by implementing the method 100 according to the embodiment which has just been described with reference to FIGS. 3A to 3D is of concave shape.
- the manufacturing method 100 can also comprise a step consisting in removing 140 the base layer 5 around the pattern 6 formed, so as to expose the part 22 of the front face 20 of the substrate 2 which is free of reliefs.
- this removal step can be carried out by photolithography, the cost of which is here advantageously very small because the patterns 6 have a transverse size greater than 100 ⁇ m, or even greater than 1 mm.
- the removal step can be completed, as shown in FIG. 3H, by removing a residual by etching, with or without an oxide type mask.
- the manufacturing method 100 can also comprise a step consisting in depositing 150 a finishing layer 7 on each pattern 6 and the exposed part of the front face 20 of the substrate 2, potentially at straight across the entire front face 20 of the substrate 2.
- the finishing layer 7 is preferably conform, so as not to modify the shape of the pattern 6, or even so as not to significantly modify the dimensions of the pattern 6, in particular with regard to the functionality of the object that one seeks to manufacture in fine.
- the finishing layer 7 is for example based on oxide, and in particular silicon oxide, in particular when the substrate is itself based on silicon or silicon nitride.
- the matrix 1 is thus prepared for additional steps comprising in particular the grafting on the finishing layer 7 of non-stick layers and / or the transfer of the pattern 6 in transfer layers generally comprising organic elements and intended to form a mold. intermediate.
- the non-stick layers are provided in order to avoid any unwanted tearing when the transfer layers of the pattern 6 are detached from the matrix 1.
- finishing layer 7 is based on silicon oxide or silicon nitride is advantageous because such a layer is impermeable to the organic elements composing the transfer layers; this avoids a migration of these organic elements in the structure 1. It is also advantageous because the grafting of non-stick layers are facilitated on this type of material.
- the matrix 1 manufactured by implementing the manufacturing method 100 according to the first declination of the invention is prepared with a view to manufacturing a nano-impression mold intended for example for the manufacture of microlenses such as that illustrated on FIG. 2.
- the mold part manufactured by implementing the manufacturing method 100 according to the second declination of the invention is prepared with a view to manufacturing, by nano-printing, a lens such as that illustrated in the FIG. 2.
- Figures 7 A to 7C illustrate an example of implementation of the manufacturing process 100 as described above.
- FIG. 7A represents a sectional view of the substrate 2 taken transversely to a plurality of reliefs forming cavities between them 41. As illustrated in FIG. 7B, the cavities 41 in fact form a regular paving of circular section holes formed in the front face 20 of the substrate.
- the base layer 5 is deformed so as to present a curved pattern 6 in line with the reliefs and generally beyond.
- the pattern 6 as illustrated in FIG. 7 A was taken according to the arrow illustrated in FIG. 7B. This pattern 6 was more particularly obtained by depositing a dry film of polymer maintained at 120 ° C. and under a pressure of 1 atmosphere, for 8 minutes following its deposition by rolling. It can be seen in FIG. 7 A, and better still in FIG. 7C which is an enlargement on the ordinate of FIG.
- a mesh size of a pattern 6 is thus defined as the transverse extent over which the pattern 6 extends before its curvature dies out. In the example illustrated, the mesh size is therefore approximately 4500 ⁇ m.
- the mesh size can define the extent over which the layer 5 must be deposited, in a centered manner, in relief of the reliefs 3 and beyond, to avoid undesirable edge effects during the deformation of the base layer 5.
- the mesh size can further define the distance to be put between these pluralities to prevent the deformation of the base layer 5 at the level of a plurality from influencing on the deformation of the base layer 5 at any other plurality.
- each plurality should be sufficiently spaced from any other plurality, if it is desired that each plurality define the curvature of the pattern 6 which it generates without any other influence, of self-controlled.
- FIGS. 8A and 8B illustrate an example corresponding to that which has just been described with reference to FIGS. 7 A to 7C, except that two pluralities of reliefs 3 are here explicitly illustrated, which are not identical to each other and which, as l 'illustrates the profile measured by a stylus and reproduced in Figure 8B, are not sufficiently spaced apart so that the pattern 6 formed by one does not affect the pattern 6 formed by the other of the two pluralities reliefs 3.
- the pattern 6 formed by one of the two pluralities of reliefs differs in depth, in curvature and in size from the pattern 6 formed by the other of the two pluralities of reliefs; this illustrates the impact of the number, the shape and the spatial distribution of the reliefs on the pattern 6 formed.
- the height of the profile between the two patterns 6 is less than the height of the profile on either side of the two patterns; the profiles therefore do not draw a landing of a height substantially equal to the height of the profile on either side of the two patterns, which would have been substantially the case if the pluralities of reliefs had been sufficiently spaced apart so that the two patterns 6 are formed independently of one another.
- the geometry of the pattern is controllable by adjusting the reliefs of a plurality and their surface density, it is still possible to compensate for a possible impact of the process on the scale of the substrate.
- This impact can be linked for example to a thermal expansion effect or to a shrinkage of volume linked to the crosslinking of the polymer.
- the compensation for this impact can be achieved by a local correction of the patterns 6 formed from, for example, an empirical study consisting of converging, from trial / error, towards the optimal solution.
- Figures 4A to 4D apply to illustrate each of the two embodiments. There appears a plurality of reliefs 3 in the form of projections on the front face 20 of the substrate 2.
- the reliefs 3 illustrated in FIG. 4A can be obtained by forming a plurality of cavities 42 in a mesa 43 formed on the front face 20 of the substrate 2, as illustrated in FIG. 5A.
- the cavities 42 can take a shape and dimensions identical to those of the cavities 41 described above.
- the reliefs 3 illustrated in FIG. 4A can be obtained by forming a plurality of reliefs 31 on the front face 20 of the substrate 2.
- the reliefs 31 can take a complementary shape and dimensions that are substantially identical with respect to those of the cavities 41 described above.
- the base layer 5 is deposited at least in line with the plurality of reliefs 3.
- the part of the base layer 5 which extends beyond the plurality of reliefs 3 may not rest on the front face 20 of the substrate 2; this depends in particular on the viscoelastic, or even plastic, parameters and on the deposition parameters of the base layer 5. Consequently, the step consisting in allowing the material of the base layer 5 to fill the spaces 4 can also comprise l step consisting in allowing the material of the base layer 5 located in line with the part 22 of the front face 20 of the substrate which is free of reliefs to come into contact with at least part of the face front 20 of the substrate 2.
- the step consisting in allowing 130 the material of the layer 5 to fill the spaces 4 may further comprise the step of allowing the material of the base layer 5 located in line with the second spaces to come fill at least partially these second spaces.
- the method 100 it is possible to manufacture a matrix for the manufacture of a mold part, a mold part for the nanoprinting of microlenses, and ultimately a lens such as that illustrated in FIG. 2, presenting in particular an aspherical curvature, and in particular a weak curvature ( ⁇ 10 2 prrf 1 ), or even very weak ( ⁇ 10 6 prrf 1 ).
- the invention exploits the viscoelastic, and potentially also plastic, deformation of a free surface 50 of a base layer 5 based on polymer or glass by filling cavities 41, 42 or spaces defined between reliefs 31 on which the base layer 5 is deposited 120.
- the shape, the curvature and the arrow of each pattern 6 formed depend on the density of the cavities 41, 42 and / or the reliefs 31, on the viscoelasticity of the base layer 5 and deposition parameters for the base layer 5.
- the volume of material displaced is proportional to the volume of the cavities 41, 42 or of the spaces defined between reliefs 31, but the shape of the pattern 6 is more related to the density of the cavities 41, 42 and / or reliefs 31 on a given mesh size.
- the mesh size depends on the materials and conditions under which the method 100 is implemented.
- the pattern 6 as generated is of aspherical shape, with low or even very low curvature, its aspect ratio can be further accentuated via a printing-etching step on a new substrate.
- the form factors then also depend on the etching process and the materials involved. In particular, if the etching selectivity between the resin of the base layer 5 and the substrate is strictly greater than 1, the curvature will be reduced. Conversely, if the etching selectivity between the resin of the base layer 5 and the substrate is strictly less than 1, the curvature will be increased.
- the manufacturing method 100 makes it possible to manufacture in parallel a plurality of patterns 6 on a substrate 2 taking the form of a wafer of eight inches in diameter, or even more, and this potentially in just a few minutes.
- the structure 1 obtained has several patterns 6, it is possible that these have been formed so as to have a predetermined relative position with respect to each other.
- the structure 1 comprising several patterns 6 can be used as such, for example, when the structure 1 is a matrix, in order to manufacture a mold allowing the simultaneous nano-printing of a plurality of microlenses having said predetermined relative position with respect to each other.
- a structure 1 comprising several patterns 6 can be cut out to separate the patterns 6 from one another, for example, when the structure 1 is a matrix, in order to each use for the manufacture of a piece of mold and, by the way, to the manufacture of a microlens.
- Another aspect of the present invention relates in fact to the use of a matrix 1 manufactured by implementing the method 100 according to one of the embodiments described above, for the manufacture of at least one nano-impression mold. .
- the invention relates to a method of manufacturing at least one nano-impression mold by molding from a matrix 1 manufactured by implementing the method 100 according to one of the embodiments previously described.
- the invention relates to the use of a nano-impression mold manufactured according to a method for manufacturing at least one nano-impression mold by molding from a matrix 1 produced by placing work of the method 100 according to one of the embodiments previously described, for the manufacture of at least one microlens 10 by nano-printing.
- the structure 1 produced according to the method 100 of the invention finds in fact for application the manufacture of microlenses or three-dimensional shapes with low, or even very low, curvature.
- the structure 1 can indeed be used as a mold comprising the pattern 6 formed by the method 100 according to the invention.
- the microlenses or three-dimensional shapes produced using such a mold can be produced on the basis of a transparent permanent polymer with visible wavelengths for visible imaging or in a polymer serving as an etching mask for manufacturing lenses. in silicon for applications related to infrared imaging.
- curved substrates which can be used as a handle to transfer flexible components thereon requiring a certain curvature in order to present a optimal or improved performance.
- imagers or video sensors such as CCD sensors (for “Charge-Coupled Device” according to English terminology)
- CCD sensors for “Charge-Coupled Device” according to English terminology
- the curvature is then induced by the support substrate manufactured with the method 100 according to the invention.
- the sensor can be manufactured on a flat substrate, the sensor then being transferred to the support substrate. This can make it possible to relax certain constraints of manufacturing the sensor, and in particular certain constraints of manufacturing the optics associated with the sensor, which no longer necessarily needs to be curved.
- the reliefs 31 and the cavities 41 which are all identical are illustrated in the figures, whether for the same plurality or different pluralities of the reliefs 31 and of the cavities 41, 42, it is understood that the reliefs 31 and the cavities 41, 42 can be of various shapes and sizes, whether within the same plurality or from one plurality to another.
- the reliefs 31 and the cavities 41, 42 of the same plurality may have different heights or depths. This allows great freedom in the shape of the pattern 6 obtained in the end.
- the cavities 41, 42 and / or the reliefs 31 can draw concentric rings of diameters different from each other.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Ophthalmology & Optometry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Laminated Bodies (AREA)
- Micromachines (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1856929A FR3084483B1 (fr) | 2018-07-25 | 2018-07-25 | Procede de realisation d'une structure presentant au moins un motif courbe |
PCT/EP2019/069829 WO2020020903A1 (fr) | 2018-07-25 | 2019-07-23 | Procédé de réalisation d'une structure présentant au moins un motif courbe |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3827311A1 true EP3827311A1 (fr) | 2021-06-02 |
Family
ID=65685439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19742219.9A Withdrawn EP3827311A1 (fr) | 2018-07-25 | 2019-07-23 | Procédé de réalisation d'une structure présentant au moins un motif courbe |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220111562A1 (fr) |
EP (1) | EP3827311A1 (fr) |
JP (1) | JP2021532407A (fr) |
FR (1) | FR3084483B1 (fr) |
WO (1) | WO2020020903A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111825311A (zh) * | 2019-04-17 | 2020-10-27 | 中国兵器工业第五九研究所 | 光学玻璃阵列透镜微纳热压成型工艺 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002283361A (ja) * | 2001-03-23 | 2002-10-03 | Seiko Epson Corp | マイクロレンズアレイ及びその製造方法並びに光学装置 |
US7280278B2 (en) * | 2004-06-02 | 2007-10-09 | Micron Technology, Inc. | Apparatus and method for manufacturing positive or negative microlenses |
US8366949B2 (en) * | 2005-08-19 | 2013-02-05 | Kiichi Takamoto | Mold for microlens and process for producing the same |
-
2018
- 2018-07-25 FR FR1856929A patent/FR3084483B1/fr not_active Expired - Fee Related
-
2019
- 2019-07-23 US US17/262,095 patent/US20220111562A1/en not_active Abandoned
- 2019-07-23 JP JP2021503803A patent/JP2021532407A/ja active Pending
- 2019-07-23 WO PCT/EP2019/069829 patent/WO2020020903A1/fr active Application Filing
- 2019-07-23 EP EP19742219.9A patent/EP3827311A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR3084483B1 (fr) | 2021-10-22 |
US20220111562A1 (en) | 2022-04-14 |
FR3084483A1 (fr) | 2020-01-31 |
JP2021532407A (ja) | 2021-11-25 |
WO2020020903A1 (fr) | 2020-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3238233B1 (fr) | Procédé de réalisation de motifs | |
EP3249468B1 (fr) | Procédé de réalisation de motifs | |
EP1951610B1 (fr) | Procede de formation de moules pour nano-impression | |
EP2769249A1 (fr) | Procede de realisation d'un dispositif optique refractif ou diffractif | |
EP1591218B1 (fr) | Moule pour la nano-impression, procede de fabrication d'un tel moule et utilisation d'un tel moule | |
EP3827311A1 (fr) | Procédé de réalisation d'une structure présentant au moins un motif courbe | |
EP2577396B1 (fr) | Lithographie par impression nanometrique | |
EP2226678B1 (fr) | Procédé de fabrication d'un moule pour la lithographie par nano-impression | |
WO2011092241A2 (fr) | Moule pour la lithographie par nano-impression et procedes de realisation | |
EP1576420B1 (fr) | Procede de lithographie par pressage d'un substrat mettant en oeuvre une nano-impression | |
EP2354847B1 (fr) | Moule pour la lithographie par nano-impression assistée uv et procédés de réalisation d'un tel moule | |
EP2616235B1 (fr) | Procédé de fabrication d'une structure optique segmentée | |
EP3822670A1 (fr) | Procédé de fabrication d'un dispositif microélectronique présentant un réseau de reliefs inclinés | |
EP3350116B1 (fr) | Moule de lithographie pour impression nanométrique et procédés de fabrication et d'utilisation d'un tel moule | |
WO2023046870A1 (fr) | Procédé de fabrication d'un moule pour nano-impression et moule associé | |
WO2016102609A1 (fr) | Procédé d'obtention de motifs dans une couche |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: UNKNOWN |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20210218 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTG | Intention to grant announced |
Effective date: 20230221 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20230704 |