Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
  • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/50—Photovoltaic [PV] devices
  • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
  • H10K30/81—Electrodes
  • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/10—Deposition of organic active material
  • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/10—Organic polymers or oligomers
  • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
  • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/10—Organic polymers or oligomers
  • H10K85/151—Copolymers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/60—Organic compounds having low molecular weight
  • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
  • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/60—Organic compounds having low molecular weight
  • H10K85/649—Aromatic compounds comprising a hetero atom
  • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/60—Organic compounds having low molecular weight
  • H10K85/649—Aromatic compounds comprising a hetero atom
  • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
  • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells

Definitions

• Organic semiconductors are envisioned to positively impact human life through applications ranging from sensors and displays to lighting and photovoltaics.
• organic devices can be printed from solution on plastic substrates, allowing for extremely thin, lightweight and elastic products that can be manufactured over large areas with freedom of shape.
• OCV organic photovoltaics
• One key advantage of solution-processable organic semiconductors is the opportunity of blending different materials in order to attain novel material properties and applications.
• the photoactive layer of a bulk- heterojunction solar cells consists of donor and acceptor materials intimately mixed together in order to maximize the light-to-current conversion.
• the common donor/acceptor (D/A) is 1 : 1-1 :2 by weight (w/w) and rarely more than 1:4 w/w can be found in the literature.
• embodiments of the present disclosure describe active layers of optoelectronic devices, methods of fabricating active layers, optoelectronic devices including active layers, methods of fabricating optoelectronic devices, tandem solar cells, and methods of converting light to current.
• an active layer of an optoelectronic device comprising a non-fullerene component and optionally one or more hole-scavenging components.
• an active layer of an optoelectronic device comprises a non-fullerene component.
• an active layer of an optoelectronic device consists essentially of a non-fullerene component.
• an active layer of an optoelectronic device comprises a non-fullerene component and a hole-scavenging component.
• an optoelectronic device consists essentially of a non-fullerene component and a hole-scavenging component.
• Embodiments of the present disclosure describe a method of fabricating an active layer of an optoelectronic device comprising contacting a non-fullerene component and optionally one or more hole-scavenging components in a presence of a solvent sufficient to form an active layer of an optoelectronic device.
• the method further comprises depositing the blended solution on one or more of a substrate, selective contact layer, and electrode material.
• Embodiments of the present disclosure describe an optoelectronic device comprising a first electrode material; an active layer; and a second electrode material, wherein the first electrode material and the second electrode material are on opposing sides of the active layer.
• the active layer consists essentially of a non- fullerene component, or comprises a non-fullerene component and one or more hole scavenging components.
• the optoelectronic device may optionally include one or more of a substrate, a first selective contact layer, and a second selective layer.
• Embodiments of the present disclosure describe an optoelectronic device comprising one or more of a substrate, a first electrode material, a first selective contact layer, an active layer, a second selective contact layer, and a second electrode material.
• one or more of the substrate, the first selective contact layer, and the second selective contact layer are optionally included in the optoelectronic device.
• Embodiments of the present disclosure describe a tandem solar cell comprising a substrate; an organic photovoltaic (OPV) subcell including at least an active layer, wherein the active layer comprises a non-fullerene component and one or more hole scavenging components; and an amorphous silicon (a-Si) subcell including at least a layer of amorphous silicon; wherein the OPV subcell and the substrate are on opposing sides of the a-Si subcell.
• OCV organic photovoltaic
• a-Si amorphous silicon
• Embodiments of the present disclosure describe a method of fabricating an optoelectronic device comprising depositing a blended solution on a first material sufficient to form an active layer, wherein the blended solution includes a non-fullerene component and one or more hole-scavenging components; and depositing a second material on the active layer, wherein the first material and the second material are on opposing sides of the active layer.
• Embodiments of the present disclosure describe a method of using an optoelectronic device comprising irradiating an active layer of an optoelectronic device, wherein the active layer comprises a non-fullerene component and optionally one or more hole-scavenging components, and converting light to electricity or electricity to light.
• FIG. 1 is a flowchart of a method of a method of fabricating an active layer of an optoelectronic device, according to one or more embodiments of the present disclosure.
• FIG. 2 is a schematic diagram of an optoelectronic device, according to one or more embodiments of the present disclosure.
• FIG. 3 is a schematic diagram of an optoelectronic device showing various optional layers of an optoelectronic device, according to one or more embodiments of the present disclosure.
• FIG. 4 is a flowchart of a method of fabricating an optoelectronic device, according to one or more embodiments of the present disclosure.
• FIG. 5 is a flowchart of a method of using an optoelectronic device comprising an active layer of the present disclosure, according to one or more embodiments of the present disclosure.
• FIG. 6 is a schematic diagram showing a configuration of an inverted organic solar cell, according to one or more embodiments of the present disclosure.
• FIG. 7 is a schematic diagram of a chemical formula for donor/acceptor materials used as a photoactive layer, according to one or more embodiments of the present disclosure.
• FIG. 8 is a graphical view showing J-V characteristics of a single component photoactive layer comprising a non-fullerene component, according to one or more embodiments of the present disclosure.
• FIG. 9 is a graphical view of a diluted system comprising a ratio of the hole scavenging component to non-fullerene component of 1: 10, according to one or more embodiments of the present disclosure.
• FIG. 10 is a graphical view of UV-Vis plots of diluted PTB7-th:IEICO-4F blend in comparison with human eye sensitivity for AVT, according to one or more embodiments of the present disclosure.
• FIG. 11 is a graphical view of UV-Vis plots of diluted PTB7-th:IEICO-4F blend in comparison with human eye sensitivity for transparency, according to one or more embodiments of the present disclosure.
• FIG. 12 is an optical micrographs of a solar module with three interconnected sub-cells, where the insets on the left represent optical magnifications of the interconnection region, where the laser lines Pl, P2, and P3 are highlighted, and where the photo-inactive area (dead area, blue) and total area (yellow) of the module are highlighted as well, according to one or more embodiments of the present disclosure.
• FIG. 13 is a graphical view of normalized PCE of 1:2 and 1: 10 D/A based solar cells in the course of light exposure, according to one or more embodiments of the present disclosure.
• FIGS. 14A-14B are graphical views showing (A) current-voltage characteristics of binary and ternary devices at 1 sun illumination; and (B) normalized PCE as a function of time for binary and ternary devices degraded at 80 degrees C in inert conditions, according to one or more embodiments of the present disclosure.
• FIG. 15 is a graphical view showing current-voltage response and statistics for single and multi-junction solar cells based on the diluted organic system, according to one or more embodiments of the present disclosure.
• FIG. 16 is a schematic drawing of a tandem solar cell, according to one or more embodiments of the present disclosure.
• the invention of the present disclosure relates to active layers that may be incorporated into a variety of optoelectronic devices.
• the active layers may be incorporated into, among other things, one or more of solar cells, photodetectors, paraelectric devices, field-effect transistors, photodiodes, phototransistors, photomultipliers, optoisolators, integrated optical circuits, photoresistors, photoconductive tubes, charge- coupled devices, injection laser diodes, quantum cascade lasers, light-emitting diodes, organic light-emitting diodes, and photoemissive tubes.
• the active layers of the optoelectronic devices may comprise one or more of a non-fullerene component and a hole scavenging component.
• the non-fullerene component may absorb near-infrared radiation, among others, and thus may be used as transparent single component optoelectronic devices.
• the non-fullerene component may be blended (e.g., intimately mixed) with one or more hole-scavenging components to form diluted systems.
• the active layers of the present disclosure may be used to scale-up and fabricate optoelectronic devices using with unprecedented transparency, stability, and performance characteristics. Another benefit is that the optoelectronic devices and/or active layers may be fabricated using a variety of coating and printing techniques using environmental friendly or green chemistry solvents.
• the active layers of the present disclosure may comprise one or more non-fullerene components and optionally one or more hole-scavenging components.
• the active layers of the present disclosure may consist essentially of one or more non-fullerene components (e.g., a non-fullerene electron acceptor), or may comprise one or more non-fullerene components and one or more hole-scavenging components.
• At least one benefit of the present invention is that electron hole / charge generation may be obtained in a single material (e.g., a non- fullerene material). In many embodiments, no donor material is required or included in the active layers of the present disclosure.
• active layers and/or optoelectronic devices of the present disclosure may comprise or consist essentially of a non-fullerene component.
• the active layer may further comprise one or more hole scavenging components.
• the hole-scavenging component may not properly be considered a donor material because it may not function as and/or may not exhibit any of the characteristics of a donor. Rather, a low amount of hole scavenging component may be introduced into the active layer to form a dilute system in which the hole scavenging component acts only as a hole scavenger and/or promotes the extraction of charges (e.g., extract a hole from non-fullerene acceptor).
• the active layers and/or optoelectronic devices of the present disclosure exhibit unprecedented transparency and stability.
• the non-fullerene component is substantially or completely transparent, while in some embodiments the hole-scavenging component may diminish transparency. Accordingly, in embodiments in which one or more hole-scavenging components are added, it may be desirable to add a low amount of the one or more hole-scavenging components in order to fabricate highly or completely transparent active layers and/or optoelectronic devices.
• These diluted systems comprising a relatively low concentration of hole-scavenging component may be highly stable.
• “hole scavenger” or“hole scavenger component” or“hole scavenging component” refers to an element, compound, molecule, or material that promotes an extraction of charges.
• non-fullerene or“NF” or“non-fullerene component” refers to any material suitable for absorbing radiation.
• “contacting” refers to the act of touching, making contact, or of bringing to immediate or close proximity, including at the cellular or molecular level, for example, to bring about a physiological reaction, a chemical reaction, or a physical change, e.g., in a solution, in a reaction mixture, in vitro, or in vivo. Accordingly, adding, stirring, treating, tumbling, vibrating, shaking, mixing, and applying are forms of contacting to bring two or more components together.
• “depositing” refers to disposing, printing (e.g., ink-jet printing), doctor-blade coating, bar coating, slot-die coating, spray coating, growing, etching, doping, epitaxy, thermal oxidation, sputtering, casting, depositing (e.g., chemical vapor deposition, physical vapor deposition, etc.), spin-coating, evaporating, applying, treating, and any other technique and/or method known to a person skilled in the art.
• “irradiating” refers to exposing to radiation.
• the radiation may comprise any wavelength, frequency, or range thereof on an electromagnetic spectrum.
• irradiating may refer to exposing to a near-infrared radiation.
• converting refers to any process for converting energy.
• Embodiments of the present disclosure describe an active layer of an optoelectronic device comprising one or more non-fullerene components and optionally one or more hole-scavenging components.
• Embodiments of the present disclosure also describe an active layer of an optoelectronic device consisting essentially of a non-fullerene component, or comprising a non-fullerene component and one or more hole-scavenging components.
• an active layer of an optoelectronic device consists essentially of a non-fullerene component.
• an active layer of an optoelectronic device comprises a non-fullerene component.
• an active layer of an optoelectronic device comprises a non-fullerene component and one or more hole-scavenging components. In an embodiment, an active layer of an optoelectronic device consists essentially of a non-fullerene component and one or more hole-scavenging components. In an embodiment, an active layer of an optoelectronic device comprises or consists essentially of a first non-fullerene component, a second non-fullerene component different from the first non-fullerene component, and a hole-scavenging component.
• the optoelectronic device may generally include and/or refer to any device and/or system that sources, detects, and/or controls light.
• the optoelectronic device may include any device based on one or more of photoelectric effect, photovoltaic effect, photoconductivity, stimulated emission, and radiative recombination.
• the optoelectronic device uses organic electronics.
• the optoelectronic device may include one or more of an organic photovoltaic (OPV), organic photodiode (OPD), organic light emitting diode (OLED), and organic photo field effect transistor (photOFET).
• OCV organic photovoltaic
• OPD organic photodiode
• OLED organic light emitting diode
• photOFET organic photo field effect transistor
• the optoelectronic device may include one or more of solar cells, photodetectors, paraelectric devices, field-effect transistors, photodiodes, phototransistors, photomultipliers, optoisolators, integrated optical circuits, photoresistors, photoconductive tubes, charge-coupled devices, injection laser diodes, quantum cascade lasers, light-emitting diodes, organic light-emitting diodes, and photoemissive tubes.
• the active layer may be suitable for converting light to electricity and/or electricity to light.
• the active layer may be characterized as a photoactive layer.
• the active layer may absorb light from any portion of the electromagnetic spectrum.
• the active layer absorbs near-infrared radiation.
• the active layer absorbs one or more of visible, near- infrared, and infrared radiation.
• the active layer may comprise a non-fullerene component (e.g., a non- fullerene acceptor or a non-fullerene electron acceptor).
• the non-fullerene component may include any non-fullerene material suitable for absorbing electromagnetic radiation or light of a desired wavelength, frequency, or range thereof.
• the non-fullerene component may include any light-absorbing semiconductor material.
• the non-fullerene component is a material that absorbs near-infrared radiation.
• the non-fullerene component may exhibit intrinsic semiconductor properties rather than excitonic properties. This feature of the non-fullerene component is completely different from conventional donor- and fullerene -based materials.
• the non-fullerene component may generate or form free charges. More specifically, the non-fullerene component may be able to efficiently split the excitons into free charges at about room temperature, among other temperatures, in the absence of any donor materials.
• the non-fullerene component is ambipolar (e.g., generate free charges).
• each respective electrode may collect holes and electrons. While the non-fullerene materials may be ambipolar, this shall not be limiting because in other embodiments, the non- fullerene component may be or include materials that are not ambipolar.
• the non-fullerene component may be one or more of a small molecule, oligomer, polymer, and cross-linked metastructure.
• the non- fullerene component may include one or more of rhodanine-benzothiadiazole-coupled indacenodithiophene (IDTBR); indacenodithieno[3,2-b]thiophene, IT), end-capped with 2- (3-oxo-2,3-dihydroinden-l-ylidene)malononitrile (INCN) groups (ITIC); indaceno[l,2- b:5,6-b']dithiophene and 2-(3-oxo-2,3-dihydroinden-l-ylidene)malononitrile (IEIC); 2,2'- ((2Z,2'Z)-((5,5'-(4,4,9,9-tetrakis(4-hexylphenyl
• the non-fullerene component includes one or more of indacenodi thiophene, indacenodithieno[3,2-b]thiophene, and indaceno[l,2-b:5,6- b ' Jdithiophene.
• a single component device e.g., active layers consisting essentially of or comprising a non-fullerene component, etc.
• PCE power conversion efficiency
• a low amount of one or more materials may be introduced to form binary diluted systems, ternary diluted systems, etc.
• the “donor” material e.g., polymer, small molecule, etc.
• this material is hereinafter referred to as a“hole scavenger” or a“hole scavenger component” or a“hole scavenging component.”
• the active layer may further comprise one or more hole-scavenging components.
• an active layer of an optoelectronic device includes a non-fullerene component and a hole-scavenging component. This is an example of a binary diluted system.
• an active layer of an optoelectronic device includes a non- fullerene component and one or more hole-scavenging components, wherein the one or more hole-scavenging components comprise a first hole-scavenging component and a second hole-scavenging component, wherein the first hole-scavenging component and the second hole-scavenging component are different.
• an active layer of an optoelectronic device includes a first non- fullerene component, a second non-fullerene component different from the first non- fullerene component, and a hole-scavenging component. Higher order and/or different versions of diluted systems can be employed.
• the active layer is a blend (e.g., mixture) of the one or more non-fullerene components and the one or more hole-scavenging components.
• the hole scavenging components may be one or more of a small molecule, oligomer, polymer, and cross-linked metastructure.
• the hole scavenging components may include one or more of thiophene, acene, fluorine, carbazole, indacenodithieno thiophene, indacenothieno thiphene, benzodithiazole, thieny- benzodithiophene-dione, benzotriazole, and diketopyrrolopyrrole.
• the active layer may be transparent or substantially transparent.
• the non-fullerene component affords the transparency of the active layer, whereas the hole-scavenging component(s) may diminish the transparency of the active layer.
• the amount of the hole scavenging component(s) increases, the transparency of the active layer decreases.
• many embodiments relate to a dilute system in which the amount of the one or more hole-scavenging components present in the active layer is low relative to the amount of the non-fullerene component.
• a ratio of the one or more hole-scavenging components to the one or more non-fullerene components may be selected to adjust, modify, or enhance a PCE and/or transparency of the active layer.
• the one or more non-fullerene components is an equal component, majority component, or the only component.
• a ratio of the one or more hole-scavenging components to the one or more non- fullerene components may range from about 0: 1 to about 1:25.
• the ratio is about 1:0, about 1 : 1, about 1:2, about 1:3, about 1:4, about 1 :5, about 1 :6, about 1 :7, about 1:8, about 1:9, about 1: 10, about 1: 11, about 1: 12, about 1: 13, about 1: 14, about 1: 15, about 1 : 16, about 1: 17, about 1: 18, about 1: 19, about 1:20, about 1:21, about 1:22, about 1:23, about 1 :24, or about 1 :25.
• the ratio may be greater than about 1:25.
• the ratio of the one or more hole scavenging components to the one or more non-fullerene components ranges from about 1: 10 to about 1:25.
• the ratio of the one or more hole scavenging components to the one or more non-fullerene components ranges from about 1:5 to about 0: 1.
• the one or more non-fullerene components and the one or more hole scavenging components may be blended or mixed to form the active layer.
• a thickness of the active layer may be on a length scale ranging from nanometers to centimeters. For example, in an embodiment, a thickness of the active layer may range from about 1 nm to about 10 cm. In an embodiment a thickness of the active layer may range from about 1 nm to about 500 pm. In an embodiment, a thickness of the active layer may range from about 1 nm to about 1000 nm. In other embodiments, a thickness of the active layer may be less than about 1 nm. Depositing or coating the active layer may be achieved via a variety of manufacturing techniques (e.g., large scale manufacturing techniques).
• the manufacturing techniques may include one or more of printing (e.g., ink-jet printing), doctor-blade coating, bar coating, vacuum deposition, roll-to-roll, sheet-to-sheet, slot-die coating, blade coating, gravure printing, spray coating, spin coating, drop casting, flexographic printing, and bar coating.
• the deposition and/or coating technique may be used to fabricate the active layer to a desired thickness.
• FIG. 1 is a flowchart of a method 100 of fabricating an active layer of an optoelectronic device, according to one or more embodiments of the present disclosure.
• the method 100 comprises contacting 101 one or more non-fullerene components and optionally one or more hole-scavenging components in a presence of a solvent sufficient to form a blended solution; and depositing 102 the blended solution on one or more of a substrate, selective contact layer, and electrode material sufficient to form an active layer of an optoelectronic device.
• step 101 one or more non-fullerene components and optionally one or more hole-scavenging components are contacted in a presence of a solvent sufficient to form a blended solution.
• Contacting may include, but is not limited to, mixing, blending, stirring, adding, and dissolving.
• the one or more non-fullerene components and optionally the one or more hole-scavenging components are dissolved in the solvent to form the blended solution.
• the one or more non-fullerene components is contacted with a solvent to form a solution.
• the one or more non-fullerene components and the one or more hole-scavenging components are contacted to form a blended solution.
• the one or more non-fullerene components and/or one or more hole scavenging components may include any of the materials described herein.
• the amount of the one or more hole- scavenging components and/or the one or more non-fullerene components contacted in the presence of a solvent may be defined by a ratio of the one or more hole-scavenging components to the one or more non-fullerene components.
• the ratio of the one or more hole-scavenging components to the one or more non-fullerene components may, for example, range from about 0: 1 to about 1 :25.
• the ratio of the one or more hole-scavenging components to the one or more non-fullerene components may range from about 0: 1 to about 1:25.
• the ratio is about 0: 1, about 1: 1, about 1 :2, about 1:3, about 1:4, about 1 :5, about 1:6, about 1:7, about 1 :8, about 1:9, about 1: 10, about 1 : 11, about 1 : 12, about 1: 13, about 1: 14, about 1: 15, about 1 : 16, about 1: 17, about 1: 18, about 1: 19, about 1:20, about 1 :21, about 1:22, about 1:23, about 1:24, or about 1:25.
• the ratio may be greater than about 1:25.
• the ratio of the one or more hole-scavenging components to the one or more non-fullerene components ranges from about 1: 10 to about 1:25. In another preferred embodiment, the ratio of the one or more hole scavenging components to the one or more non-fullerene components ranges from about 1 :5 to about 0: 1.
• the solvent may include any solvent suitable for dissolving one or more of the one or more non-fullerene components and one or more hole-scavenging components.
• the solvent may include one or more of organic solvents, inorganic solvents, aqueous-based solvents, polar solvents, and non-polar solvents.
• the solvent is an organic solvent.
• the solvent is one or more of xylene, tetralin, mesitylene, chloroform, chlorobenzene, and dichlorobenzene.
• the solvent is or may include an environmentally friendly solvent or a green chemistry solvent.
• An example of such solvents includes, but is not limited to, one or more of xylene, tetralin, and mesitylene.
• the blended solution is deposited on, for example, one or more of a substrate, selective contact layer, and electrode material.
• Depositing may include, but is not limited to, one or more of printing, coating, casting, and depositing.
• depositing may include one or more of ink-jet printing, doctor-blade coating, spin-coating, blade-coating, spray-coating, bar-coating, slot-die-coating, knife-coating, roll-coating, wire- bar coating, and dip-coating.
• depositing includes spin-coating.
• a speed (e.g., revolutions per minute (rpm)) of a spin-coating device may be adjusted to obtain different thicknesses of the blended solution and/or active layer.
• the blended solution may be deposited at speeds ranging from about 100 rpm to about 5000 pm.
• the blended solution is deposited at speeds ranging from about 300 rpm to about 2000 rpm.
• depositing may include scalable processes, such as blade-coating.
• a thickness of the blended solution and/or active layer may be on a length scale ranging from nanometers to centimeters.
• the object onto which the blended solution is deposited may depend on the optoelectronic device.
• the blended solution is deposited on a substrate.
• the substrate can be a transparent or substantially transparent substrate, either of which can be optionally coated.
• transparent or substantially transparent substrates include, but are not limited to, PET, polycarbonates, and quartz, among other materials, which can be optionally coated.
• the substrate may be selected from a transparent or substantially transparent substrate coated with indium tin oxide or fluorine- doped tin oxide.
• the blended solution is deposited on a transparent or substantially transparent substrate coated with fluorine-doped tin oxide.
• the blended solution is deposited on a transparent or substantially transparent substrate coated with indium tin oxide. These shall not be limiting as other examples are described herein.
• the blended solution is deposited on a substrate comprising a selective contact layer.
• the blended solution is deposited on a selective contact layer.
• the blended solution is deposited on an electrode material.
• Embodiments of the present disclosure describe an optoelectronic device.
• the optoelectronic device may comprise a first electrode material, an active layer, and a second electrode material, wherein the active layer is disposed between the first electrode material and the second electrode material.
• Any of the active layers of the present disclosure may be used herein.
• the active layer either consists essentially of a non- fullerene component, or comprises a non-fullerene component and one or more hole- scavenger components.
• the active layer consists essentially of a non-fullerene component.
• the active layer comprises a non- fullerene component and a hole-scavenger component.
• the active layer comprises a non-fullerene component, a first hole-scavenger component, and a second hole-scavenger component, wherein the first hole-scavenger component and the second hole-scavenger component are different.
• the non-fullerene component and/or hole- scavenger component may include any of the characteristics or features described in the present disclosure.
• FIG. 2 is a schematic diagram of an optoelectronic device 200, according to one or more embodiments of the present disclosure.
• the optoelectronic device 200 comprises a first electrode material 203, an active layer 207, and a second electrode material 211.
• the active layer 207 may be disposed between the first electrode material 203 and the second electrode material 211.
• the active layer 207 may be in contact with a surface of the first electrode material 203 and a surface of the second electrode material 211, wherein the first electrode material 203 and the second electrode material 211 are on opposing sides of the active layer 207.
• the optoelectronic device 200 may optionally further comprise one or more of a substrate 201 (not shown), a first selective contact layer 205 (not shown), and a second selective contact layer 209 (not shown).
• a substrate 201 not shown
• a first selective contact layer 205 not shown
• a second selective contact layer 209 not shown
• an interdigitated electrode(s) is used.
• FIG. 3 is a schematic diagram of an optoelectronic device 300 showing the optional layers of an optoelectronic device, according to one or more embodiments of the present disclosure.
• the optoelectronic device 300 comprises one or more of a substrate 301, a first electrode material 303, a first selective contact layer 305, an active layer 307, a second selective contact layer 309, and a second electrode material 311, wherein one or more of the substrate 301, first selective layer 305, and second selective layer 309 are optionally included in the optoelectronic device 300.
• the active layer 307 may be disposed between the first electrode material 303 and the second electrode material 311.
• the first selective contact layer 305 is positioned between and in contact with the first electrode material 303 and the active layer 307.
• the second selective contact layer 309 is positioned between and in contact with the second electrode material 311 and the active layer 307.
• the substrate 301 is in contact with the first selective contact layer 305 and otherwise exposed to an environment.
• the substrate is in contact with the second selective contact layer 309 and otherwise exposed to an environment.
• the optoelectronic device may be configured as substrate/first electrode material/first selective contact layer/active layer/second selective contact layer/second electrode material.
• an interdigitated electrode (not shown) is used.
• the optoelectronic device 300 is a multi-junction or tandem solar cell.
• the tandem solar cell may comprise a substrate 301, a first electrode material 303, a first selective contact layer 305, an active layer 307, a second selective contact layer 309, and a second electrode material 311, wherein the substrate 301 is another solar cell.
• the solar cell, as the substrate 301 can include, but is not limited to, amorphous silicon (a- Si), perovskite crystal structures, solid-state dye sensitized structures, liquid-electrolyte dye sensitized structures, cadmium telluride materials, cadmium sulfide materials, and gallium arsenide materials, among others.
• the substrate 301 may comprise a layer of amorphous silicon (a-Si) positioned between, and in contact with, the first electrode material 303 and another electrode material (not shown).
• a-Si amorphous silicon
• the first electrode material 303 is included in or considered a part of the another solar cell 301.
• Glass may be positioned on, and in contact with, an opposing surface of the another electrode material.
• the front cell (or a-Si subcell) may be based on the layer of amorphous silicon (a-Si), which absorbs some light in the visible region (while allowing some visible light to pass, retaining some transparency), while allowing the invisible (near infrared) wavelengths to pass through freely and be absorbed by the“back cell” (or OPV subcell), which comprises the diluted systems described herein.
• a-Si amorphous silicon
• the optoelectronic device 300 comprises a tandem solar cell comprising a first subcell (e.g., an organic photovoltaic (OPV) subcell), a substrate, and a second subcell (e.g., an amorphous silicon (a-Si) subcell, perovskite crystal structures, solid-state dye sensitized structures, liquid-electrolyte dye sensitized structures, cadmium telluride materials, cadmium sulfide materials, and gallium arsenide materials, etc.) positioned between the first subcell and the substrate.
• a first subcell e.g., an organic photovoltaic (OPV) subcell
• a substrate e.g., an organic photovoltaic (OPV) subcell
• a second subcell e.g., an amorphous silicon (a-Si) subcell, perovskite crystal structures, solid-state dye sensitized structures, liquid-electrolyte dye sensitized structures,
• an OPV subcell comprises the first selective contact layer 305, the active layer 307, the second selective contact layer 309, the second electrode material 311, and optionally the first electrode material 303.
• an a-Si subcell 301 comprises a third electrode material (not shown), a layer of amorphous silicon (not shown), and optionally the first electrode material 303.
• the layer of amorphous silicon may comprise negatively doped, undoped, and/or positively doped a-Si:H.
• the substrate is glass.
• the optoelectronic device 300 is an inverted optoelectronic device.
• the inverted optoelectronic device may comprise a substrate 301, a first electrode material 303, a first selective contact layer 305, an active layer 307, a second selective contact layer 309, and a second electrode material 311.
• the first selective contact layer 305 is n-type and the second selective contact layer 309 is p-type.
• the optoelectronic device 300 is a non-inverted optoelectronic device, with a conventional or normal architecture.
• the non-inverted optoelectronic device may comprise a substrate 301, a first electrode material 303, a first selective contact layer 305, an active layer 307, a second selective contact layer 309, and a second electrode material 311.
• the first selective contact layer 305 is p-type and the second selective contact layer 309 is n-type.
• the optoelectronic device 200 or 300 may comprise one or more electrode materials.
• the optoelectronic device may comprise one or more of a first electrode material 303 and a second electrode material 311.
• one or more of the first electrode material 303 and the second electrode material 311 may be transparent.
• at least one of the first electrode material 303 and the second electrode material 311 is transparent.
• the first electrode material 303 and the second electrode material 311 are transparent.
• the entire optoelectronic device may exhibit high transparency in a range visible to the human eye (i.e., a“transparent” optoelectronic device).
• either the first electrode material 303 or the second electrode material 311 may be a high work function conductive electrode and the other electrode material may be a low work function conductive electrode.
• a cathode may comprise a high work function metal or metal oxide and/or an anode may comprise a low work function metal.
• the optoelectronic device e.g., an organic solar cell
• the optoelectronic device may be characterized as comprising an inverted configuration.
• the optoelectronic device may be characterized as comprising a non- inverted configuration (e.g., a conventional or normal configuration).
• the first electrode material 303 and the second electrode material 311 may selected based on an architecture of the optoelectronic device (e.g., based on inverted configurations and non- inverted configurations).
• One or more of the first electrode material 303 and the second electrode material 311 may be one or more of a doped oxide, metallic conductor, conducting polymer, and carbon-based conductor.
• the doped oxide may include any material with high concentrations of free electrons.
• the doped oxide may include one or more of a metal oxide semiconductor and conductor.
• the doped oxide may include one or more of indium-doped tin oxide (ITO), fluoride-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), and In 2 0 3 .
• the metallic conductor may include any metals with complementary work functions with respect to the HOMO/LUMO of the charge selective layers, allowing, for example, favorable electron or hole transfer between layers.
• the metallic conductor may be one or more of a solid, grid, and wire-mesh array.
• the metallic conductor includes one or more of silver, gold, aluminum, copper, titanium, zinc, steel, and chromium.
• the conducting polymer may include any material with high conductivity and/or transparency.
• the conducting polymer may include PEDOT:PSS.
• the carbon-based conductor may include one or more of graphene, carbon black, graphite, carbon nanotubes, and carbon nanowires.
• the carbon-based conductor includes one or more of a single-wall carbon nanotube, a single-wall carbon nanowire, multi-wall carbon nanotube, and multi-wall carbon nanowire, where the carbon single-wall or multi-wall nanotube or nanowire structures are sufficiently narrow in one dimension so as to allow for high optical transparency while maintaining high electrical conductivity.
• Typical concentrations of carbon nanotubes and nano wires in an ink range between about 0.001% and about 1%, but typically may be about 0.1% by weight.
• the number of carbon atom layers should be low enough to allow for high optical transparency while maintaining high electrical conductivity.
• Layer thicknesses typically range between 1 and 10 atoms thickness, preferably 1.
• the dimensions of these carbon sheets ranges between 5 pm and 10,000 pm, typically 50 pm.
• a sufficiently small addition of these material may be used in conjunction with a high optical transparency electrical conductor to further improve conductivity without imparting a high degree of opacity.
• the optional substrate 301 may include any suitable substrate.
• suitable substrates may include substrates with a high degree of flatness on a micron-scale or smaller.
• suitable substrates may include transparent substrates, while in other embodiments, suitable substrates may be one or more of non transparent, partially transparent, or substantially transparent.
• the substrates can optionally be coated (e.g., with ITO, FTO, etc.).
• the optional substrate 301 may include one or more of glass, metallic, polymer, and ceramic.
• the glass substrate may include one or more of soda-lime glass, borosilicate glass, fused silica glass, and aluminosilicate glass.
• the metallic substrate may include one or more of titanium, nickel, iron, zinc, and copper.
• the polymer substrate may include one or more of PET, PEN, PU, PC, PMMA, PETG, silicone, polyetherimide (PEI), nylon/PA, PE, and PP.
• the ceramic substrate may include one or more of aluminum oxide, silicon dioxide, quartz, slate, kaolinite, montmorillonite-smectite, illite, chlorite, and calcium aluminate.
• the optional first selective contact layer 305 and/or optional second selective contact layer 309 may include one or more of a p-type selective contact layer and a n-type selective contact layer.
• the first selective contact layer 305 is a p-type selective contact layer and the second selective contact layer 309 is a n-type selective contact layer.
• the first selective contact layer 305 is a n-type selective contact layer and the second selective contact layer 309 is a p-type selective contact layer.
• the p-type selective contact layer may include one or more of PEDOT:PSS, nickel oxide, graphene, fluorine-doped CsSnI 3 , perovskites, metal-phthalocynanine (e.g., copper-phthalocyanine), Cul, PFN, metal- thiocyanate, and derivatives thereof.
• the n-type selective layer may include one or more of phthalocyanine, polyacetylene, poly(phenylene vinylene), and derivatives thereof.
• the first selective layer and/or second selective layer may include bathocuproine and/or metal oxide semiconductors.
• the metal oxide semiconductors may include one or more of T1O2, ZnO, Sn0 2 , Nb 2 0 5 , SrTiCh, NiO, WO3, V 2 0 5 , indium tin oxide, fluorine-doped tin oxide, and mixtures thereof.
• FIG. 4 is a flowchart of a method of fabricating an optoelectronic device, according to one or more embodiments of the present disclosure.
• the method 400 comprises depositing 401 a blended solution on a first material sufficient to form an active layer, wherein the blended solution includes a non-fullerene component and optionally one or more hole-scavenging components; and depositing 402 a second material on the active layer, wherein the first material and the second material are on opposing sides of the active layer.
• Depositing may include any of the techniques described in the present disclosure.
• the depositing may include one or more of printing, doctor-blade coating, bar coating, slot-die coating, spin-coating, blade-coating, and spray-coating.
• depositing includes spin-coating.
• the blended solution consists essentially of a non-fullerene component.
• the blended solution comprises a non-fullerene component.
• the blended solution comprises a non-fullerene component and one or more hole-scavenging components.
• the blended solution consists essentially of a non-fullerene component and one or more hole-scavenging components.
• the first material and the second material may include any layers or components of an optoelectronic device.
• the first material refers to one or more of a substrate, a first electrode material, and a first selective contact layer.
• the first material refers to one or more of a second electrode material and a second selective contact layer.
• the second material refers to one or more of a substrate, a first electrode material, and a first selective contact layer.
• the second material refers to a second electrode material and a second selective contact layer.
• the method comprises depositing a first precursor solution, wherein the first precursor solution forms a first selective contact layer.
• the method comprises depositing a second precursor solution, wherein the second precursor solution forms a second selective contact layer.
• the method may comprise preparing a blended solution, wherein the blended solution includes a non-fullerene component and one or more hole scavenging components dissolved in an organic solvent (e.g., an environmentally friendly or green chemistry solvent).
• the method may comprise washing a substrate.
• the substrate may be washed with one or more of detergent water, deionized water, acetone, and isopropyl alcohol.
• the washing may include washing in an ultrasonic bath for a specified period of time.
• the method may comprise preparing a precursor solution of a first or second selective layer.
• the method may comprise treating the substrate.
• the substrate may be subjected to UV-ozone treatment.
• the precursor solution of the first or second selective layer may be spin coated onto the substrate and/or a composite comprising the substrate and the first or second selective layer.
• the method comprises heating the deposited precursor solution.
• the method comprises spin-coating the blended solution on any layer of the optoelectronic device.
• the method may comprise depositing a layer via thermal evaporation.
• FIG. 5 is a flowchart of a method 500 of using an optoelectronic device, according to one or more embodiments of the present disclosure. As shown in FIG.
• the method 500 comprises irradiating 501 a surface of an optoelectronic device comprising an active layer, wherein the active layer comprises a non-fullerene component and optionally one or more hole-scavenging components; and converting 502 light to electricity or electricity to light.
• the active layer is a photoactive layer.
• the active layer consists essentially of a non-fullerene component.
• the active layer comprises a non-fullerene component.
• the active layer comprises a non-fullerene component and one or more hole-scavenging components.
• the active layer consists essentially of a non-fullerene component and one or more hole-scavenging components.
• Irradiating generally refers to exposing to radiation.
• the radiation may comprise any wavelength, frequency, or range thereof of the electromagnetic spectrum.
• irradiating includes exposing to near-infrared radiation.
• irradiating includes exposing to visible light.
• irradiating includes exposing to any radiation on the electromagnetic spectrum. Converting generally refers to any process for converting energy.
• the Example described herein relates to novel single component and diluted systems.
• a“diluted” system (D/A 1: 10-1:25) was fabricated, which in combination with an infrared acceptor can feature AVT > 70% and, at the same time, delivery PCE > 5-6%.
• Ultra-fast ( ⁇ 300 fs) transient absorption spectroscopy (TAS) revealed that the non- fullerene acceptors featured intrinsic semiconductor properties, rather than excitonic. This is different from common donor and fullerene -based materials.
• FIG. 7 shows the current density versus voltage (J-V) characteristics of the single component device under AM1.5G illumination at 100 mWcm 2 .
• the solar cell delivered a short circuit current density (J sc ) of 3 mA cm 2 , an open-circuit voltage (V oc ) of 0.77 V, a fill factor of 32%, and an overall PCE of ⁇ 1%.
• J sc short circuit current density
• V oc open-circuit voltage
• V oc open-circuit voltage
• FIG. 8 shows the current density versus voltage (J-V) characteristics the single component device under AM1.5G illumination at 100 mWcm 2 .
• the diluted system PTB7-Th:IEICO-4F devices delivered a PCE of 5% with 1 : 10 D/A.
• FIG. 9 is a graphical view of a diluted system comprising a ratio of hole-scavenging component to non-fullerene component of 1: 10.
• FIG. 10 shows the transmittance of the BHJ with respect the human eye sensitivity.
• An AVT of 70% was calculated for the all wavelength range (360-1000 nm), the highest reported so far for organic solar cells.
• the transparency of the active layer was calculated according to the human eye response (FIG. 11). Transparency values as high as 90% were obtained for PTB7-th:IEICO-4F film. This is impressive, considering that the bare glass reduced the transparency up to 5-8%.
• Photovoltaic modules represented an important test bed because real-world applications typically require large voltage outputs, which can be achieved through monolithic interconnection of consecutive cells. High solar module efficiencies were achieved on glass and on flexible substrates, importantly whilst maintaining a high AVT and GFF.
• PTB7-Th was purchased from 1- Materials Inc. IEICO-4F was synthesized using conventional methods.
• PTB7-Th IEICO- 4F blend solution was prepared in chlorobenzene with a concentration of 20 mg/ml.
• the inverted device structure was ITO/zinc oxide (ZnO)/PTB7-Th: IEICO-4F/MoOx/Ag.
• ITO substrates were cleaned with detergent water, deionized water, acetone and isopropyl alcohol in an ultrasonic bath sequentially for 20 min.
• Zinc oxide precursor solution was prepared by dissolving 2.4 g of zinc acetate dihydrate (Zn(CH 3 C00) 2 -2H 2 0, 99%, Sigma) and 0.647 ml of ethanolamine (NH 2 CH 2 CH 2 OH, 98%, Sigma) in 30 ml of 2- methoxyethanol (CH 3 OCH 2 CH 2 OH, 98%, Sigma), then stirring the solution overnight.
• the ITO substrates were under UV-Ozone treatment for 30 min. After the UV-Ozone treatment, ZnO precursor solution was spin coated at 4000 rpm onto the ITO substrates. After being baked at 200 °C for 10 min in air, the ZnO-coated substrates were transferred into nitrogen- filled glove box.
• the donor/acceptor blend solution was spin coated with different speed (300 rpm to 2000 rpm) to obtain different thickness.
• the device fabrication was completed by thermal evaporation of 5 nm MoOx (Alfa) and 100 nm Ag (Kurt Fesker) at a pressure of less than 2xl0 6 Pa.
• the active area of all devices was 0.1 cm 2 through a shadow mask. J-V measurements of solar cells were performed in the glovebox with a Keithley 2400 source meter and an Oriel Sol3A Class AAA solar simulator calibrated to 1 sun, AM1.5 G, with a KG-5 silicon reference cell certified by Newport.
• Module The process involved high precision, ultrafast laser structuring of sequential, uniformly coated layers to form interconnects with low series resistance and reduced dead area.
• Glass/ITO and PET/ITO-Ag-ITO (IMI) substrates were used to realize both rigid and flexible devices, respectively.
• IMI PET/ITO-Ag-ITO
• three laser steps were necessary: the Pl laser defined the bottom electrode, the P2 line“opened” the photoactive layer to create a contact between top and bottom electrode and P3 electrically separated the top electrode (FIG. 12).
• the area between the Pl and the P3 line was not photo-active and thus can be considered a loss region (dead area).
• GFF geometric fill factor
• the laser structuring made it possible to achieve interconnection regions of 250 - 300 pm and thus GFFs as high as 90%.
• FIG. 13 is a graphical view of normalized PCE of 1:2 and 1: 10 D/A based solar cells in the course of light exposure, according to one or more embodiments of the present disclosure.
• the solar cells were placed in a sealed, electronically controlled degradation chamber with regulated environment (0 2 ⁇ lppm, H2O ⁇ lppm).
• the J-V characteristics of both 1:2 Hole Scavenger/NF and 1: 10 Hole Scavenger/NF based devices were probed periodically while continuously light-soaked using a metal halide lamp irradiating at 100 mW/cm 2 .
• the 1 : 10 Hole Scavenger/NF based solar cells show improved photostability compared to the 1:2 Hole Scavenger/NF based devices.
• the common substrate used for organic solar cells consists of a glass coated with Indium Tin Oxide (ITO) characterized by low sheet resistance ( ⁇ 15 Ohm/sq) and low roughness ( ⁇ l nm).
• ITO Indium Tin Oxide
• FTO Fluorine doped Tin Oxide
• conventional organic solar cells feature low efficiency when fabricated on FTO for the higher roughness of the substrate compared to ITO.
• organic solar cells based on non-fullerene and one or more hole scavengers were fabricated on commercially available FTO.
• the devices delivered comparable PCE with the standard ITO-based solar cells.
• the short-circuit current density was the only parameter affected by the substrate replacement, due to the higher parasitic absorption in the NIR of FTO compared to ITO. It was found that the diluted systems featured a higher tolerance toward defect/roughness of the substrate compare to convention donor: acceptor blends. The results are reported in Table 1.
• Typical solar cells are based on a single layer of photovoltaic material, whether it be based on silicon, perovskite, or an organic bulk heterojunction.
• photovoltaic material whether it be based on silicon, perovskite, or an organic bulk heterojunction.
• this efficiency ceiling is around 33%.
• by‘stacking’ multiple photovoltaic materials on top of one another in the same device known as‘multi-junction’ or‘tandem’ solar cells
• JSC short-circuit current density
• This ‘front cell’ was based on a layer of amorphous silicon (a-Si) which absorbs some light in the visible region of the solar spectrum (while allowing some visible light to pass, retaining some transparency), whilst allowing the invisible (near infrared) wavelengths to pass through freely and be absorbed by the diluted organic‘back cell’ as described herein.
• a-Si amorphous silicon
• Such tandem solar cells can greatly improve the efficiency of a-Si solar cells with no significant disadvantages compared to pristine a-Si alone.
• the diluted organic photovoltaic materials described herein exhibited nearly identical JSC compared to standard a-Si solar cell while maintaining high visible transparency. This meant the new tandem device exhibited a much higher VOC (and hence, efficiency) with no appreciable decrease in the visual transparency or JSC limitations.
• the front cell can be based on other materials, including, but not limited to, perovskite crystal structures, solid-state dye sensitized structures, liquid-electrolyte dye sensitized structures, cadmium telluride materials, cadmium sulfide materials, and gallium arsenide materials, among others.
• This device structure is envisaged to be used in commercial applications where a slightly‘darker’ solar panel is required, wherein the optical properties can still be tuned by varying the donor and acceptor ratios as described in the present disclosure.
• FIG. 15 shows the current-voltage reponses of single-junction organic (blue), single-junction a-Si (red) and multi-junction tandem solar cells (orange).
• the underlying table shows that by utilizing this tandem structure, the power conversion efficiency of an a- Si solar cell was improved from 7.7% to 14.0%.
• FIG. 16 is a schematic drawing of a tandem solar cell, according to one or more embodiments of the present disclosure.

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