EP3688428A1 - V(mo)ox active material with a transition metal oxide doped vanadium target for microbolometer applications and a method thereof - Google Patents
V(mo)ox active material with a transition metal oxide doped vanadium target for microbolometer applications and a method thereofInfo
- Publication number
- EP3688428A1 EP3688428A1 EP18803794.9A EP18803794A EP3688428A1 EP 3688428 A1 EP3688428 A1 EP 3688428A1 EP 18803794 A EP18803794 A EP 18803794A EP 3688428 A1 EP3688428 A1 EP 3688428A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- thin film
- transition metal
- active material
- production method
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000314 transition metal oxide Inorganic materials 0.000 title claims abstract description 20
- 229910052720 vanadium Inorganic materials 0.000 title claims abstract description 18
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000011149 active material Substances 0.000 title abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 12
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000003852 thin film production method Methods 0.000 claims description 9
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 229910004140 HfO Inorganic materials 0.000 abstract 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 abstract 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011540 sensing material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001456 vanadium ion Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Definitions
- the present invention relates to V(MO)O x active material (bolometric thin film) by using transition metal oxide (MO: W0 3 , Nb 2 0 5 , Ti0 2 , HfO) doped vanadium target for microbolometer applications and a method thereof.
- transition metal oxide MO: W0 3 , Nb 2 0 5 , Ti0 2 , HfO
- Vanadium oxides have been used as sensing materials for microbolometer applications.
- VO x thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low electrical noise level.
- TCR temperature coefficient of resistivity
- the most important parameter which determine noise performance of microbolometer detectors is bolometric properties of used active material. In these properties, TCR and noise levels are the basic factors which shows the active material's usability. In the state of art, there are some difficulties to develop an active material with high TCR and low electrical noise level.
- US6322670B2 discloses VO x material comprising vanadium and oxygen forming respective portions of the VO x material, wherein x is a value selected to determine a thermal coefficient of resistance (TCR) of between 0.005 and 0.05.
- TCR thermal coefficient of resistance
- the VO x material properties can be changed or modified by controlling certain parameters in the ion beam sputter deposition environment.
- the process is a low temperature process (less than 100 degrees C.).
- Main object of the present invention is to improve the performance of bolometer device through providing a thin film having a low electrical noise level and high TCR ⁇ >2.1).
- Another object of the present invention is to provide a thin film for microbolometer applications having high stability.
- Further object of the present invention is to provide a thin film compitable with CMOS due to low temperature production method. Said thin film increases CMOS compatibility through applying all production steps without thermal process.
- Another object of the present invention is to provide a production method having high reproducibility, uniformity and performance. This technique provides excellent superiority with regard to uniformity and performance properties over other methods in the literature which perform depositions from various targets and metal phase doped target.
- a thin film suitable for bolometric applications comprising a vanadium target doped with one of the transition metal oxides wherein said thin film is represented by V(MO)O x and the transition metal oxide (MO) is WO 3 , Nb 2 0 5 , Ti0 2 , HfO.
- a method for production of said thin film comprises the steps of providing a vanadium target, depositing of the vanadium target with one of the transition metal oxides which are W0 3 , Nb 2 0 5 , Ti0 2 , HfO.
- Figure 1 shows a diagram of active material (thin film) production method by using transition metal oxide doped vanadium target.
- Thin film represented as V(MO)O x is produced by using vanadium target doped with the most stable phase of transition metal oxides wherein said x is in the range of 1.7-2.5.
- Said transition metal oxides (MO) are W0 3 , Nb 2 0 5 , Ti0 2 , HfO. Therefore, instead of metal, the most stable oxide phase is doped into the thin film. Deposition of these transition metal oxides improves bolometric properties and product stability, it also increases CMOS compatibility through applying all production steps without thermal process.
- Bolometric properties of the thin film is obtained as 2-3.5 %-K -1 for TCR, noise parameter is 10 14 -10 13 .
- FIG. 1 shows a diagram of thin film production method by using transition metal oxide doped vanadium target.
- the thin film production method is given below:
- Said deposition is obtained by using DC, Pulsed-DC or RF sputtering methods while the deposition pressure is in the range of 1 -5 mTorr.
- the deposition process is performed in the atmosphere consisted of %1 -30 reactive gas (i.e. 0 2 /Ar) ratio.
- the deposition thickness of the thin film is in the range of 50-300 nm.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
An active material (bolometric thin film) suitable for bolometric applications comprising a vanadium target doped with one of the transition metal oxides wherein said active material is represented by V(MO)Ox and the transition metal oxide (MO) is WO3, Nb2O5, TiO2, HfO and a method for producing thereof. Thus, active material stability and performance parameters improve. This technique provides excellent superiority with regard to uniformity and performance properties over other methods in the prior art which perform depositions from various targets and metal phase doped target.
Description
V(MO)Ox active material with a transition metal oxide doped vanadium target for microbolometer applications and a method thereof
Technical Field
The present invention relates to V(MO)Ox active material (bolometric thin film) by using transition metal oxide (MO: W03, Nb205, Ti02, HfO) doped vanadium target for microbolometer applications and a method thereof.
State of The Art
Vanadium oxides (VOx) have been used as sensing materials for microbolometer applications. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low electrical noise level. The most important parameter which determine noise performance of microbolometer detectors is bolometric properties of used active material. In these properties, TCR and noise levels are the basic factors which shows the active material's usability. In the state of art, there are some difficulties to develop an active material with high TCR and low electrical noise level.
In the literature studies, deposition methods form various targets or metal doped targets are used as active material deposition techniques. While this situation has a negative effect on film uniformity, it gets hard to control amount of doped metal and oxidation process. So, the reproducability of VOx fabrication is difficult due to the complexity of the manufacturing method. There are also some incompatibilities for the produced material with microfabrication techniques.
US6489613B1 discloses an oxide thin film for bolometer having a vanadium oxide represented by VOx, where x satisfies 1 5<=x<=2.0, part of vanadium ion in the vanadium oxide being substituted by metal ion M, where the metal ion M is at least one of chromium (Cr), aluminum (Al), iron (Fe), manganese (Mn), niobium (Nb), tantalum (Ta) and titanium (Ti). Also, provided is an infrared detector having a bolometer thin film defined above.
US6322670B2 discloses VOx material comprising vanadium and oxygen forming respective portions of the VOx material, wherein x is a value selected to determine a thermal coefficient of resistance (TCR) of between 0.005 and 0.05. The VOx material properties can be changed
or modified by controlling certain parameters in the ion beam sputter deposition environment. The process is a low temperature process (less than 100 degrees C.).
None of the documents in the prior art disclose a stable and active vanadium material doped with transition metal oxides and a production method providing high uniformity and performance properties, also CMOS compatibility. Therefore, there is a need to provide an active vanadium material having high stability with high TCR and low noise levels and also a production method having reproducibility and high uniformity and CMOS (Complementary metal-oxide-semiconductor) compatibility.
Brief Description Of The Invention
In order to produce high performance microbolometers, it is required to focus on producing material with high TCR and low noise levels. Main object of the present invention is to improve the performance of bolometer device through providing a thin film having a low electrical noise level and high TCR {>2.1).
Another object of the present invention is to provide a thin film for microbolometer applications having high stability.
Further object of the present invention is to provide a thin film compitable with CMOS due to low temperature production method. Said thin film increases CMOS compatibility through applying all production steps without thermal process.
Another object of the present invention is to provide a production method having high reproducibility, uniformity and performance. This technique provides excellent superiority with regard to uniformity and performance properties over other methods in the literature which perform depositions from various targets and metal phase doped target.
In fulfillment of the objectives described above, a thin film is provided suitable for bolometric applications comprising a vanadium target doped with one of the transition metal oxides wherein said thin film is represented by V(MO)Ox and the transition metal oxide (MO) is WO3, Nb205, Ti02, HfO. Also, a method for production of said thin film is provided comprises the steps of providing a vanadium target, depositing of the vanadium target with one of the transition metal oxides which are W03, Nb205, Ti02, HfO.
Brief Description of The Figures
Figure 1 shows a diagram of active material (thin film) production method by using transition metal oxide doped vanadium target.
Detailed Description of The Invention
Thin film represented as V(MO)Ox according to present invention is produced by using vanadium target doped with the most stable phase of transition metal oxides wherein said x is in the range of 1.7-2.5. Said transition metal oxides (MO) are W03, Nb205, Ti02, HfO. Therefore, instead of metal, the most stable oxide phase is doped into the thin film. Deposition of these transition metal oxides improves bolometric properties and product stability, it also increases CMOS compatibility through applying all production steps without thermal process. Bolometric properties of the thin film is obtained as 2-3.5 %-K-1 for TCR, noise parameter is 10 14-10 13.
Figure 1 shows a diagram of thin film production method by using transition metal oxide doped vanadium target. The thin film production method is given below:
- providing a vanadium target,
- depositing of the vanadium target with one of the transition metal oxides which are W03, Nb205, Ti02, HfO.
Said deposition is obtained by using DC, Pulsed-DC or RF sputtering methods while the deposition pressure is in the range of 1 -5 mTorr. The deposition process is performed in the atmosphere consisted of %1 -30 reactive gas (i.e. 02 /Ar) ratio. The deposition thickness of the thin film is in the range of 50-300 nm.
Claims
1 . A thin film suitable for bolometric applications comprising a vanadium target doped with one of the transition metal oxides wherein said thin film is represented by V(MO)Ox and the transition metal oxide (MO) is W03, Nb205, Ti02, HfO.
2. The thin film according to claim 1 , wherein said transition metal oxides (MO) are in the range of %1 -20.
3. The thin film according to claim 1 , wherein the deposition thickness of the thin film is in the range of 50-300 nm.
4. The thin film according to claim 1 , wherein said thin film has a TOR value of 2-3.5 %- K-1.
5. The thin film according to claim 1 , wherein said thin film has a noise parameter in the range of 10 14-10 13.
6. The thin film according to claim 1 , wherein said x is in the range of 1.7-2.5.
7. A thin film production method suitable for bolometric applications comprises the steps of
- providing a vanadium target,
- depositing of the vanadium target with one of the transition metal oxides which are W03, Nb205, Ti02, HfO.
8. The thin film production method according to claim 7 wherein said deposition is obtained by using DC, Pulsed-DC or RF sputtering methods.
9. The thin film production method according to claim 7 wherein deposition pressure is in the range of 1 -5 mTorr.
10. The thin film production method according to claim 7 wherein said deposition is performed in the atmosphere consisted of %1 -30 reactive gas ratio.
1 1. The thin film production method according to claim 10 wherein said reactive gas is 02.
12. The thin film production method according to claim 7 wherein the deposition thickness of the thin film is in the range of 50-300 nm.
13. The thin film production method according to claim 7 wherein said transition metal oxides are in the range of %1 -20.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/TR2018/050242 WO2019221677A1 (en) | 2018-05-17 | 2018-05-17 | V(mo)ox active material with a transition metal oxide doped vanadium target for microbolometer applications and a method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP3688428A1 true EP3688428A1 (en) | 2020-08-05 |
Family
ID=64316962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP18803794.9A Pending EP3688428A1 (en) | 2018-05-17 | 2018-05-17 | V(mo)ox active material with a transition metal oxide doped vanadium target for microbolometer applications and a method thereof |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP3688428A1 (en) |
| JP (1) | JP2021505756A (en) |
| IL (1) | IL274827B (en) |
| RU (1) | RU2740633C1 (en) |
| WO (1) | WO2019221677A1 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6322670B2 (en) * | 1996-12-31 | 2001-11-27 | Honeywell International Inc. | Flexible high performance microbolometer detector material fabricated via controlled ion beam sputter deposition process |
| JP3080093B2 (en) | 1998-09-01 | 2000-08-21 | 日本電気株式会社 | Oxide thin film for bolometer and infrared sensor using the oxide thin film |
| JP2002118004A (en) * | 2000-10-11 | 2002-04-19 | Sharp Corp | Temperature-sensitive resistance film, its manufacturing method, and infrared sensor using the same |
| KR100596196B1 (en) * | 2004-01-29 | 2006-07-03 | 한국과학기술연구원 | Oxide thin film for bolometer and infrared detector using the oxide thin film |
-
2018
- 2018-05-17 JP JP2020518774A patent/JP2021505756A/en active Pending
- 2018-05-17 RU RU2020115271A patent/RU2740633C1/en active
- 2018-05-17 EP EP18803794.9A patent/EP3688428A1/en active Pending
- 2018-05-17 WO PCT/TR2018/050242 patent/WO2019221677A1/en unknown
-
2020
- 2020-05-21 IL IL274827A patent/IL274827B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019221677A1 (en) | 2019-11-21 |
| IL274827B (en) | 2022-04-01 |
| IL274827A (en) | 2020-07-30 |
| JP2021505756A (en) | 2021-02-18 |
| RU2740633C1 (en) | 2021-01-18 |
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