Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
  • H01G11/54—Electrolytes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/33—Thin- or thick-film capacitors 
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/022—Electrolytes; Absorbents
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
  • H01G9/004—Details
  • H01G9/07—Dielectric layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
  • H01L28/40—Capacitors
  • H01L28/60—Electrodes

Definitions

• Embodiments of the present invention relate generally to energy storage and wireless charging systems. Description of Related Art
• capacitors there is a significant need for high energy density capacitors to replace batteries in many applications (e.g. electric vehicles and other modes of transportation including planes or trains, cell phones, backup storage for utilities, windmills, and any other type of electrical facility) because capacitors can be charged and discharged very rapidly and last for many thousands, even millions of cycles.
• applications e.g. electric vehicles and other modes of transportation including planes or trains, cell phones, backup storage for utilities, windmills, and any other type of electrical facility
• batteries typically charge very slowly and last only a couple thousand full cycles at most, and much less if discharged more than fifty percent (50%) each cycle. Further, capacitors are not hazardous and do not have any of the safety issues typically associated with batteries.
• a further object of the invention is to provide an improved capacitor by substantially increasing the dielectric constant "k", while shrinking the distance between the plates.
• U DM ultra-dielectric material
• a high energy density capacitor comprising a substrate and at least one dielectric layer disposed between a positive electrode and a negative electrode.
• a metal layer is deposited on each of the dielectric layers for attachment to the poles of the electrodes.
• the positive and negative electrodes extend along a height of the capacitor and have poles in an alternating arrangement around an edge thereof, such that the positive and negative electrodes are attached to periodic metal layers deposited on each of the intermediate dielectric layers.
• Each intermediate dielectric layer is polarized such that its dipoles are aligned in an opposite direction of an electric field created between the positive and negative electrodes while charging.
• the capacitor of the present invention is a multi-layer capacitor comprising internal passivation layers disposed between each capacitor stack, wherein a stack consists of a plurality of intermediate dielectric layers and metal layers arranged in series.
• Each intermediate dielectric layer is comprised of a high surface area dielectric material, an electrolyte and a polar organic solvent, and is formed by depositing sequential layers of the high surface area dielectric material, the electrolyte and the polar organic solvent onto the substrate using semiconductor fabrication techniques.
• the high surface area dielectric material has a dielectric constant in the range of about 10 9 to about 10".
• the polar organic solvent may be a polar protic solvent selected from the group comprising Nhh, (Chh COH, CsHeO, C2H6O, CH3OH, CH3COOH, and H2O.
• the polar organic solvent may be a polar aprotic solvent selected from the group comprising C3H6O, (Chh NCH, CHsCN, C2H6OS, CH2CI2, C 4 HeO, and C4H8O2.
• Each intermediate dielectric layer may be comprised by molar percentage of about three percent (3%) to about twenty percent (20%) electrolyte, about three percent (3%) to about twenty percent (20%) dielectric material, and about sixty percent (60%) to about ninety- four percent (94%) polar organic solvent.
• the present invention is directed to a method of forming a high energy density capacitor, comprising: providing a substrate, providing a positive electrode disposed on the substrate and a negative electrode opposite the positive electrode, providing at least one intermediate dielectric layer disposed between the positive electrode and negative electrode, and providing a metal layer deposited on each of the at least one intermediate dielectric layers.
• Each intermediate dielectric layer is comprised of a high surface area dielectric material, an electrolyte and a polar organic solvent, and is formed by depositing sequential layers of the high surface area dielectric material, the electrolyte and the polar organic solvent onto the substrate using semiconductor fabrication techniques.
• the method may comprise positioning the positive and negative electrodes to extend along a height of the capacitor such that the poles of the electrodes are in an alternating arrangement around an edge thereof, and attaching the positive and negative electrodes to periodic metal layers deposited on each of the at least one intermediate dielectric layers.
• the dipoles of each intermediate dielectric layer may be aligned such that the polarized dielectric layer opposes an electric field created between the positive and negative electrodes while charging.
• the method may include providing a plurality of intermediate dielectric layers and metal layers arranged in series to form a stack, and providing at least one an internal passivation layer disposed between each stack.
• the polar organic solvent in the intermediate dielectric layer may be a polar protic solvent selected from the group comprising Nhh, (CH 3 ) 3 COH, CBHBO, C2H6O, CHsOH, CHaCOOH, and H2O.
• the polar organic solvent may be a polar aprotic solvent selected from the group comprising C3H6O, (CH3)2NCH, ChtaCN, GzHeOS, CH2CI2, C4H8O, and C4H8O2.
• the present invention is directed to a capacitive wireless charging system, comprising an external AC power source and a transmitter charging plate comprising a transmitter pad coated with a dielectric material layer and a transmission coil for generating a magnetic field from AC power received from the external AC power source, the external AC power source connected to the transmitter charging plate.
• the system further includes an electrical device comprising a storage capacitor for supplying power to the electric device, a receiver charging plate comprising a receiver pad coated with a dielectric material layer, a receiving coil for receiving energy from the magnetic field generated by the charging plate transmission coil, and a control module for converting energy received from the magnetic field into electric current to charge the storage capacitor.
• An RFID sensor may be disposed between the transmitter charging plate and electrical device receiver charging plate, the RFID sensor adapted to ensure proper alignment of the charging plates.
• the dielectric material layer coating each of the transmitter pad and receiver pad may comprise a high surface area dielectric material, an electrolyte and a polar organic solvent.
• the high surface area dielectric material may have a dielectric constant in the range of about 10 9 to about 10 11 .
• the polar organic solvent may be a polar protic solvent selected from the group comprising NH3, (ChtabCOH, C3H8O, C2H6O, CH3OH, CH3COOH, and H2O, or a polar aprotic solvent selected from the group comprising C3H6O, (Chh NCH, ChhCN, C2H6OS, CH2CI2, CtHeO, and .OHeC .
• the dielectric layer may be comprised by molar percentage of about 3% to about 20% electrolyte, about 3% to about 20% dielectric material, and about 60% to about 94% polar organic solvent.
• the present invention is directed to a charging pad for utilization in a capacitive wireless charging system for electrical devices, the charging pad coated with a dielectric layer comprising a high surface area dielectric material, an electrolyte and a polar organic solvent, the charging pad for disposition on or within a transmitter side or receiver side charging plate of the capacitive wireless charging system.
• the high surface area dielectric material may have a dielectric constant in the range of about 10 9 to about 10 11 .
• the polar organic solvent may be a polar protic solvent selected from the group comprising NH3, (Chh COH, CsHeO, C2H6O, CHaOH, CH3COOH, and H2O, or a polar aprotic solvent selected from the group comprising C3H6O, (Chh NCH, CH3CN, C2H6OS, CH2CI2, CtHsO, and GtHeC .
• the present invention is directed to a method of wirelessly charging a capacitor.
• the method comprises providing a transmitter charging plate comprising a transmitter pad coated with a dielectric material layer and a transmission coil for generating a magnetic field from AC power received from an external AC power source, and providing an electrical device comprising a storage capacitor for supplying power to the electric device, a receiver charging plate comprising a receiver pad coated with a dielectric material layer, a receiving coil for receiving energy from the magnetic field generated by the charging plate transmission coil, and a control module for converting energy received from the magnetic field into electric current to charge the storage capacitor.
• the method further comprises aligning the electrical device receiver charging plate with the transmitter charging plate, providing an external AC power source to the transmitter charging plate, generating the magnetic field from the AC power by the transmission coil, receiving energy from the magnetic field at the receiving coil, and converting energy received from the magnetic field into electric current to charge the capacitor.
• the dielectric material layer coating each of the transmitter pad and receiver pad may comprise a high surface area dielectric material, an electrolyte and a polar organic solvent.
• the high surface area dielectric material may have a dielectric constant in the range of about 10 9 to about 10 11 .
• the polar organic solvent may be a polar protic solvent selected from the group comprising NH3, (ChtabCOH, C3H8O, C2H6O, CH3OH, ChtaCOOH, and H2O, or a polar aprotic solvent selected from the group comprising C3H6O, (Chh NCH, ChhCN, C2H60S, CH2CI2, C H8O, and C4H8O2.
• the dielectric layer may be comprised by molar percentage of about 3% to about 20% electrolyte, about 3% to about 20% dielectric material, and about 60% to about 94% polar organic solvent.
• Fig. 1 depicts a wafer or panel with layers of metal and dielectric layers, in accordance with disclosed embodiments of the present invention.
• Fig. 2 depicts the capacitors of the present invention in serial paral lel arrays, in accordance with disclosed embodiments.
• Fig. 3 depicts the capacitors of the present invention having an alternating anode and cathode pole arrangement around the edge of the device in order to get the charge in and out quickly with minimal effective series resistance (ES ).
• ES effective series resistance
• Fig. 4 depicts the dielectric surface area of a capacitor in accordance with embodiments of the present invention, wherein surface area "A" is a three dimensional (3D) surface area, as opposed to two dimensional (2D).
• Fig. 5 depicts the capacitor layer anatomy of a capacitor in accordance with disclosed embodiments of the present invention.
• Fig. 6 depicts a deposition chamber used in an exemplary process for forming a capacitor in accordance with embodiments of the present invention.
• Fig. 7 depicts a deposition chamber used in a second exemplary process for forming a capacitor in accordance with embodiments of the present invention.
• Fig. 8 depicts a schematic of a capacitive wireless charging system in accordance with disclosed embodiments of the present invention.
• Fig. 9 depicts one embodiment of a capacitive charging system plate and pad arrangement in accordance with disclosed embodiments of the present invention.
• Fig. 10 depicts one embodiment of a capacitive charging system automatic positioning servo system in accordance with disclosed embodiments of the present invention.
• the high energy density capacitor of the present invention provides a solution for replacing slow charging, short-life batteries with quick charging, long-life capacitors.
• the method of forming the capacitor(s) of the present invention utilizes atomic layer deposition (ALD), metal oxide chemical vapor deposition (MOCVD), Electrospray, Sputtering, 3D printing and other semiconducting fabrication equipment to produce sub-micron thin layers and the capability for at least twelve (12) inch wafers and/or rectangular substrates, like those used for LED panels, which are available in a wide variety of generations and sizes. Wafers may also be sawed into any shape or size and stacked to any height.
• ALD atomic layer deposition
• MOCVD metal oxide chemical vapor deposition
• Electrospray, Sputtering, 3D printing and other semiconducting fabrication equipment to produce sub-micron thin layers and the capability for at least twelve (12) inch wafers and/or rectangular substrates, like those used for LED panels, which are available in a wide variety of generations and sizes. Wafers
• the capacitor includes a wafer or substrate upon which is deposited alternating layers of metal and dielectric layers, and further includes a positive electrode 100, a negative electrode 101 , and a "stack" of five (5) capacitors 102, which makes a 25 volt stack at one-fifth (1/5 th ) the capacitance of a single instantiation, since the five are in series.
• a passivation layer 103 or insulator isolates the "stacks" 102.
• a metal layer 104, an ultra-dielectric material (U DM) layer 105, and the substrate or wafer 106 complete the assembly, in accordance with disclosed embodiments of the present invention.
• Fig. 2 depicts how a plurality of capacitors are organized in serial parallel arrays, in accordance with disclosed embodiments.
• Capacitor 201 is a single capacitor formed with U DM and metal layers.
• Stack 202 depicts a stack of five (5) capacitors in series. Putting capacitors in series lowers the capacitance, but it is necessary to increase the voltage.
• each capacitor 201 is rated at 5 volts, therefore the stack 202 is rated up to 25 volts, albeit at one-fifth (1/5 th ) the capacitance of a single capacitor.
• the total capacitance is increased by arranging an array of stacks in parallel, because capacitors in paral lel sum. Up to n stacks 203 may be created until the desired level of energy storage is achieved.
• the present invention produces a high capacitance EDLC-type electrochemical capacitor by substantially increasing the dielectric constant "k", while shrinking the distance between the plates.
• Fig. 3 the capacitors' alternating anode 300 and cathode 301 pole arrangement around the edge of the capacitor device is shown. Alternating poles in such a way allows the charge in and out quickly with minimal effective series resistance (ESR).
• ESR effective series resistance
• additional positive and negative electrodes may be dispersed intermittently in the interior of the capacitor device, and may be arranged around the center of the device. As shown in the side view of Fig. 3, the electrodes extend along the full height of the capacitor array, even though these poles only attach to the metal layers periodically.
• the electrodes 301 are attached to every fifth layer (as depicted in Fig. 1 ), in order to achieve 25 volt stacks.
• the unconnected layers may be masked to create a gap between the metal layers 501 and the electrodes 300, 301 .
• Fig. 4 depicts the dielectric surface area of an embodiment of a capacitor of the present invention.
• surface area "A” is a three dimensional (3D) surface area, not 2D.
• the atomic layer of conducting atoms snuggle in around the dielectric atoms, forming a three dimensional structure which yields a much higher surface area than just the 2D. It's the 3D surface area which in this case is the surface area for a bunch of half spheres, i.e. 1 ⁇ 2 *(4 ⁇ 2 ) multiplied by the number of atoms or molecules in the length by width area.
• Fig. 5 depicts the capacitor layer anatomy of one embodiment of the capacitor of the present invention, comprising anode and cathode metal layers 501 , with layers of high surface area dielectric material (such as silica) and positive and negative atomic layers disposed therebetween.
• Fig. 5 illustrates how the dipoles 502 in the dielectric layer 500 align with the electric field 503 of the capacitor, but in the opposite direction, which leads to a reduction in the total field, and an increase in the total quantity of charge that the capacitor can hold for a given voltage/applied field. As a result, more charge can build up on the positive and negative electrodes 501 .
• the "k” in physics is determined by the degree of polarization that the dielectric layers 500 can undergo, in other words, how many dipoles 502 are available inside the "N"-type and "P"-type atomic layers to reduce the applied field across the capacitor, thereby allowing more charge to be stored on the plates.
• the high energy density capacitor of the present invention comprises aligning electric dipole domains.
• the present invention optimizes energy density by maximizing the operating voltage.
• Some polar organic solvents have breakdown voltages three (3) to four (4) times higher than distilled water, and some are in the 5V range at micron thicknesses. By contrast, distilled water breakdown voltage limits the operating voltage to 0.8 to 1 .2 volts per cell.
• the present invention also encompasses replacing the polar protic solvents with electric dipole materials, electrets, that are deposited and aligned to oppose the main electric field created when the capacitor is charging.
• each capacitor may have a thickness of much less than 1 micron ( ⁇ ) to optimize energy density while increasing capacitance.
• the ultra-dielectric materials (UDM) utilized in one embodiment comprise a combination of a polar organic solvent from Table 1 below, an electrolyte from Table 2 below, and a high surface area dielectric material from Table 3 below.
• polar protic solvents are used for their high dielectric constants and high dipole moments.
• polar aprotic solvents work well also, e.g., DMSO, KCI, and S1O2 or DMSO, NaCI, and S1O2, and therefore it should be understood by those skilled in the art that the present invention encompasses such alternative compositions which include a polar aprotic solvent in place of a polar protic solvent.
• ammonia (Nhh) is used as the polar protic solvent
• Nh CL is the electrolyte
• silicon dioxide is the high surface area dielectric material.
• these materials are each deposited in sequential layers onto the wafer or substrate to build up a half micron (0.5 ⁇ ) layer of UDM material 105 using semiconductor processing equipment and/or 3D printers. Then a quarter micron (0.25 /m) layer of metal 104 is deposited on top of the UDM layer 105. This is repeated in an alternating process until five (5) complete UDM/metal sandwich layers are completed, thereby forming a 25 volt stack 102.
• the three UDM compounds are built up sequentially in molar percentages of about three percent (3%) to about twenty percent (20%) electrolyte (Table 2), about three percent (3%) to about twenty percent (20%) dielectric materials (Table 3), and about sixty percent (60%) to about ninety-four percent (94%) polar organic solvent (Table 1 ).
• UDM compounds yield dielectric "k" values in the 10 8 to 10 11 range.
• Table 4 reveals the high energy density of an embodiment of the capacitor of the present invention using a six (6) inch wafer and assuming k is at the median point of the range of about 10 10 .
• the UDM dielectric layer thickness is .5 ⁇ in this example. Stacks of five layers in series creates a 25 volt capacitor. This embodiment yields 56.1 kWh of capacity with only 100 stacks.
• the Fumed Silica utilized was 7nm Aldrich powder.
• Capacitors made in accordance with the present invention may have a life cycle of more than 1 ,000,000 cycles even at deep discharge rates, e.g., eighty percent (80%) depth of discharge ("DoD").
• the charge time for each capacitor may be about 30 seconds for full recharge.
• the capacitors may be sawed in various shapes and sizes and placed into the final packaging using activated carbon, graphene or other type electrodes. These capacitors may be used in electric vehicles (EVs) and charged using a capacitive wireless charging system, as will be described below, which may be easily installed in existing service stations.
• EVs electric vehicles
• Other applications for the improved high energy density capacitor of the present invention include not only vehicles, but other modes of transportation including planes or trains, backup storage for utilities, windmills, and any other type of electrical facilities.
• the wafers or substrates may be twelve (12") inch ( - 300 mm), but any size wafer or even rectangular LED panels will work in ALD, MOCVD and other semiconductor or 3D printing systems. Up to 370mm x 470mm panels may be used to make rectangular capacitors. It is further contemplated by the present invention that larger panels may be used as they become available in the future.
• In one embodiment according to the present invention is a two solvent mixture of ethylene glycol and a polar organic cosolvent from Table 1 . Boric acid is dissolved in this mixture with a carboxylic acid.
• a deposition chamber used in an exemplary solid state process for forming a capacitor in accordance with embodiments of the present invention is shown in Fig. 6.
• Dipole structures in each dielectric layer are fabricated by depositing a layer of polarized dielectric material and aligning the dipoles using high voltage plates. This process requires minimal layers per capacitor.
• Capacitive plates are placed above and below the deposition chamber external to the chamber and a high voltage DC is applied.
• One capacitive plate takes on a high positive Voltage and the other a high negative Voltage, to ensure that the dipoles remain aligned while applying each subsequent layer.
• the small dipoles in the Oxide layer align in the opposite direction of the Electric Field. After each layer is completed, the dipoles will remain aligned after the external Electric Field is removed. Consequently, the dielectric "k" value increases by several orders of magnitude and the breakdown voltages increase by an order of magnitude or more over what is conventionally expected.
• An advantage of this solid state deposition process is that many layers may be built up to make very large capacitors.
• a atomic layer deposition (ALD) chamber used in a second, different solid state process for forming a high energy density capacitor of the present invention is shown.
• the dipole structures are fabricated in a sandwich of alternating layers of ions and dielectric by first depositing a layer of dielectric 605 disposed above the p-Electrode 606, then a layer of n-ions 604, another layer of dielectric 603, a layer of p-ions 602, and another layer of dielectric 601 to insulate the p-ions from the n-Electrode 600.
• This process requires more layers per capacitor.
• a wafer or substrate is placed at the bottom of the deposition chamber, and aligned with the positive electrode or p-Electrode.
• the first layer of ions is deposited by filling the chamber with ionic gas and placing a High Voltage plate inside the chamber beneath the substrate or wafer, as well as placing a High Voltage plate having an opposite voltage above and external to the chamber, to create a strong Electric Field by applying a DC Voltage.
• the chamber is cleared, and a dielectric layer is applied to hold the ions (up to five atomic layers may be required), before removing the Electric Field.
• the chamber is then flooded with a positive ion gas and the voltage on the plates is reversed.
• the Positive ions get close to the dielectric layer, the Negative ions underneath the dielectric layer attract the Positive ions and align them overhead, creating smaller dipoles.
• the process of reversing the chamber plate Voltage is repeated, selecting the other ionizing tip, as necessary.
• the positive and negative ions may instead be replaced by a mixture of bare electrons and protons.
• electrospray may be used to deposit the ion layers. It is contemplated that other low cost, high fidelity methods may be used to deposit the dielectric layer.
• ultra-dielectric material (UDM) layer as described above comprising at least a high surface area dielectric material, an electrolyte and a polar organic solvent, may also be used as a cushion for coupling charging pads as part of a capacitive wireless charging system.
• Fig. 8 depicts a schematic of a capacitive wireless charging system in accordance with an embodiment of the present invention.
• the transmitter side of the capacitive wireless system is represented generally as 105 and the receiver side is represented generally as 106, in accordance with disclosed embodiments herein.
• the transmitter side 105 of the wireless charging system comprises a transmitter charging plate 101 , including at least one transmitter pad and a transmitter coil for generating a magnetic field from AC power received from an external AC power source.
• the transmitter AC input terminals A, B receive alternating current (AC) from the grid when the computer activates a relay.
• AC alternating current
• the receiver side of the wireless charging system comprises a receiver charging plate 104, and includes at least one receiver pad and a receiver coil for receiving energy from the magnetic field generated by the charging plate transmission coil, and a control module for converting energy received from the magnetic field into electric current to charge the storage capacitor.
• the transmitter side charging plate and pad arrangement is shown generally at 102
• the receiver side charging plate and pad arrangement is shown generally at 103.
• Energy is transferred from the transmission coil to the receiving coil to power the storage capacitor through principles of inductive coupling. The mechanics of inductive coupling should be known to those skilled in the art and therefore a specific description is not included herein.
• each charging plate 101 , 104 contains two large capacitor charging pads, as shown in Fig.
• each charging pad 102, 103 is constructed of metal and coated with a high "k” dielectric material.
• the dielectric pads may be constructed of one of the dielectrics in Table 3 above to produce an ultra-dielectric material (U DM) layer comprising a combination of a polar organic solvent from Table 1 above, and an electrolyte from Table 2 above.
• U DM ultra-dielectric material
• This is a high "k” dielectric, but it's also used for cushioning when coupling the transmitter pads 102 to the receiver pads 103.
• This high "k” dielectric material provides a high capacitance coupling to the receiver pads 104, which significantly reduces the capacitive reactance, Xc.
• Capacitive reactance is defined as: where:
• Xc capacitive resistance (ohms)
• n (pi) 3.142 or 22/7
• f frequency (Hz)
• a loss of 5.37 Watts when transmitting 100 amps at 120 VAC yields 99.91 % efficiency because 5.37 Watts would be lost on each pad for a total loss of 10.74 Watts out of 12,000 Watts.
• Fig. 9 depicts one embodiment of a capacitive charging system plate and pad arrangement according to the present invention, including the frame enclosure 200, the "A" pad 201 and the "B" pad 202 in accordance with disclosed embodiments herein.
• An external AC power source going into the transmitter charging plate is shown at 203, and the transmitter AC input terminals are not shown, for clarity. It should be noted that for AC input, polarity doesn't matter. Therefore, in an embodiment of the wireless charging system being used to charge an electric vehicle (EV), for example, the EV could enter the wireless charging system facing either direction, further simplifying charging.
• an RFID sensor may be centered between the two charging pads on the vehicle side to ensure proper alignment. Then the plate(s) with charging pads are mounted on an automatic positioning servo system mounting bracket 300, as shown in Fig. 10.
• Fig. 10 depicts one embodiment of an capacitive charging system automatic positioning servo system of the present invention, which may be a Black Bull fully automatic electric car jack, including the capacitive charging system plate mounting bracket 300 and the wireless remote servo control 301 that is activated and controlled by the computer that receives the credit cards and enables dispensing power in accordance with disclosed embodiments.
• an electric vehicle EV
• the automatic positioning servo system 300 raises and/or moves the transmitter side charging pad into contact with the receiver side charging pad, to enable inductive charging.
• the charging pads do not need to be in contact, just in close proximity to each other, in order for transfer of energy from the magnetic field to occur.
• the present invention achieves one or more of the following advantages.
• the capacitor of the present invention provides a solution for replacing slow charging, short-life batteries with quick charging, long-life capacitors having a significant higher energy density than prior art capacitors.
• the method of forming the capacitor(s) of the present invention utilizes atomic layer deposition (ALD), metal oxide chemical vapor deposition (MOCVD), 3D printing and other semiconducting fabrication equipment to produce sub-micron thin layers and the capability for 12 inch wafers and/or rectangular substrates, like those used for LED panels, which are available in a wide variety of generations and sizes. Wafers may also be sawed into any shape or size and stacked to any height.
• ALD atomic layer deposition
• MOCVD metal oxide chemical vapor deposition
• 3D printing and other semiconducting fabrication equipment to produce sub-micron thin layers and the capability for 12 inch wafers and/or rectangular substrates, like those used for LED panels, which are available in a wide variety of generations and sizes. Wafers may also be sawed into any shape or size and stacked to any height.
• the instant invention takes advantage of these advances by utilizing a large array of ALD machines and other standard semiconducting fabrication machinery, 3D printing and robotic automation to apply up to thousands
• the ultra-dielectric material (U DM) layers contemplated by the present invention may also be used as a cushion for coupling charging pads as part of a capacitive wireless charging system.
• Each charging pad may be coated with a high "k” dielectric, which acts as cushioning when coupling the transmitter pads to the receiver pads and the high " " dielectric material provides a high capacitance coupling to the receiver pads, which significantly reduces the capacitive reactance.

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