EP3560001A1 - Dispositif electroluminescent - Google Patents
Dispositif electroluminescentInfo
- Publication number
- EP3560001A1 EP3560001A1 EP17832085.9A EP17832085A EP3560001A1 EP 3560001 A1 EP3560001 A1 EP 3560001A1 EP 17832085 A EP17832085 A EP 17832085A EP 3560001 A1 EP3560001 A1 EP 3560001A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode
- region
- electroluminescent
- contact surface
- current density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000007423 decrease Effects 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 230000003247 decreasing effect Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000002070 nanowire Substances 0.000 claims description 6
- 230000006978 adaptation Effects 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 239000011787 zinc oxide Substances 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000000284 resting effect Effects 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Definitions
- the present invention relates to an electroluminescent device comprising at least one electroluminescent structure. More particularly, the at least one electroluminescent structure is optionally devoid of a support substrate, and whose electrode design makes it possible to homogenize the temperature of said diode during operation.
- Figure 1 illustrates an electroluminescent device 10 known from the state of the art.
- the device 10 comprises a plurality of light-emitting diodes 11 arranged in a matrix manner (n rows and m columns), and resting on the front face of a thick support substrate 12, of several tens of micrometers in thickness (for example 80 ⁇ ).
- a thick support substrate requires the formation of relatively deep trenches in said support substrate so as to electrically isolate the light emitting diodes.
- the formation of deep trenches is complicated to implement, and makes, above all, difficult the consideration of light emitting diodes of a size less than 30 ⁇ .
- the deep trenches are generally formed by a step of deep etching by reactive ions ("DRI E” or “Deep Reactive Ion etching” according to the terminology Anglo-Saxon) whose cost is often too important.
- DRI E reactive ions
- Deep Reactive Ion etching reactive ions
- FIGS. 2a and 2b illustrate the temperature profile of light-emitting diodes in operation resting, respectively, on a support substrate of 80 ⁇ and 5 ⁇ .
- a support substrate with a thickness of 80 ⁇ limits the difference in temperature at 7 ° C. between the center C and the contour B of a diode while this difference rises to 57 ° C. as soon as the Support substrate is thinned to have a thickness of 5 ⁇ .
- Such a temperature difference may induce thermomechanical stresses within the light emitting diode, which in the long term may degrade the performance of said diode.
- an objective of the present invention is to propose a light-emitting device comprising electroluminescent structures, and allowing the use of a support substrate having a thickness of less than 20 ⁇ , more particularly less than 10 ⁇ , without however degrading the thermal management of said electroluminescent structures.
- Another objective of the present invention is to propose a light-emitting device whose manufacturing method is simpler to implement than those known from the state of the art.
- an electroluminescent device comprising:
- At least one electroluminescent structure comprising a first face and a second substantially parallel face
- the device being characterized in that the first electrode is shaped to impose a decay, from a first region and in the direction of at least a second region of the contact surface, of a current density capable of passing through the electroluminescent structure.
- contact is meant in electrical contact.
- first region and the second region belong to the same surface of contact.
- electroluminescent device we mean a device that includes a light emitting structure, a first electrode, and a second electrode.
- the first electrode electrically contacts one or the other of the first and second faces, while the second electrode electrically contacts one or the other of the first and second faces which is not in contact with the first electrode.
- the presence of the second electrode is at least implicit, and therefore is not necessarily specified.
- this decrease in current density makes it possible to standardize the temperature of the electroluminescent structure, more particularly since the electroluminescent device is disposed on a support substrate of thickness less than 20 ⁇ , or even less than 10 ⁇ .
- the device It is therefore unnecessary to provide the device with a thick support substrate, for example having a thickness of several tens of micrometers.
- the present invention contrasts with known electroluminescent devices of the state of the art for which the first and second electrodes are generally shaped to impose a uniform current density over the entire surface formed by one and / or the other first and second faces.
- shallow trenches also open the way to the formation of electroluminescent structures of smaller size, for example side less than 20 ⁇ , or even less than 10 ⁇ .
- the contact surface includes a center and a contour, the first region comprising the center of the contact surface, preferably, the current density is maximum at the first region.
- the contact between the first electrode with one or other of the first and second faces is at least in the center of said face.
- the first electrode has a decreasing thickness profile in at least two opposite directions from the center to the contour of the contact surface.
- the at least one second region is adjacent to the contour of the contact surface.
- two opposite directions we mean two directions of the plane formed by the contact surface.
- the two opposite directions also pass through the center of said contact surface. It is also admitted throughout the description, without it being necessary to specify it, that, although preferably parallel, the two opposite directions may have an angle deviation, for example an angle deviation of less than 20 °.
- the thickness profile is decreasing in the two opposite directions from the center to the contour. It is furthermore admitted that the thickness of the first electrode has a maximum thickness in the center.
- the thickness profile comprises bearings parallel to one or the other of the first and second faces.
- the thickness profile has a decreasing monotonous and continuous.
- the first electrode comprises at least one of the following materials: Cu, Al, Ti, Ni, Ag, Pd, Pt, Rh, Au, In, a conductive transparent oxide
- the oxide transparent conductive material comprises at least one of indium tin oxide (ITO), zinc oxide (ZnO), zinc oxide doped with gallium (GZO), zinc oxide doped with gallium and indium (IGZO), zinc oxide doped with aluminum (AZO), zinc oxide doped with gallium and aluminum (AGZO), cadmium oxide doped with indium, tin dioxide (Sn0 2 ).
- the aforementioned elements may be in the form of ink, for example with at least one of the compounds chosen from: DEPOT-PSS (poly (3,4-ethylenedioxythiophene) and poly (styrene) sulfonate), graphene, carbon nanotubes.
- DEPOT-PSS poly (3,4-ethylenedioxythiophene) and poly (styrene) sulfonate
- graphene carbon nanotubes.
- the first electrode comprises a material having a positive temperature coefficient, advantageously, the material comprises at least one of the elements chosen from: Barium Titanate ceramic, Strontium Titanate ceramic, Titanate ceramic Lead, tantalum nitride.
- the first electrode has a textured metal contact surface with either of the first and second, the textured metal contacting surface comprising metallic contact regions and regions free of metallic contact. .
- the density of metal contact regions decreases from the first region to the second region.
- the regions free of metal contact correspond to recesses formed in one or the other of the front and rear electrodes.
- the recesses are filled with a dielectric material, advantageously the dielectric material comprises at least materials chosen from: silicon dioxide, silicon nitride.
- the metal contact regions have a density decreasing from the center to the edge of the first or second face with which the first electrode is in contact.
- the metal contact regions have a circular shape.
- the at least one electroluminescent structure comprises, from one of its first and second faces towards the other of the first and second faces, an electroluminescent layer resting on a support substrate having a thickness of less than 10 ⁇ , advantageously less than 5 ⁇ .
- the electroluminescent layer comprises an active layer interposed between a first semiconductor layer and a second semiconductor layer.
- the active layer comprises at least materials chosen from: GaN, InGaN, InGaAs, InGaAIP, GaAs.
- the electroluminescent layer comprises nanowires perpendicular to the front face.
- the device comprises a plurality of matrix-arranged electroluminescent structures.
- the invention also relates to a method of dimensioning the first electrode intended to be implemented in the electroluminescent device according to the invention, the electroluminescent device comprising at least one electroluminescent structure comprising a first and a second surface essentially parallel, the first electrode being in contact, with respect to a contact surface, with one or other of the first and second faces, the method comprising the following steps:
- step b) a step of producing the first electrode making it possible to produce the current density profile of step a).
- the step a) of determining the current density profile is executed in such a way that the temperature difference between the first and second regions is less than a predetermined temperature difference, advantageously the predetermined temperature difference is less than 20 ° C, more preferably less than 10 ° C, or even less than 5 ° C.
- the adaptation step b) comprises an adjustment of a thickness profile of the first electrode.
- FIG. 1 is a schematic representation of an electroluminescent device known from the state of the art
- FIGS. 2a and 2b are graphical representations of the temperature profile (on the vertical axis, in "° C") of the front face of a light-emitting diode as a function of the distance from the center C of said diode ( on the horizontal axis), more particularly, FIGS. 2a and 2b relate to a light-emitting diode resting, respectively, on a support substrate of 80 ⁇ and 5 ⁇ of thickness, FIG. 3a is a schematic representation in a transverse sectional plane of a light-emitting structure that can be implemented in the context of the present invention,
- FIG. 3b is a schematic representation in a transverse sectional plane of an electroluminescent structure comprising a plurality of nanowires extending perpendicularly to the front face, and capable of being implemented in the context of the present invention
- FIGS. 4a and 4b are diagrammatic representations of an electroluminescent device according to a first embodiment of the invention
- FIG. 5 is a graphical representation of variation of resistance
- FIG. 6a is a schematic representation of an electroluminescent device according to a third embodiment of the invention.
- FIG. 6b is a diagrammatic representation, seen from above, of a rear electrode that can be implemented in the context of the third embodiment of the present invention.
- FIG. 7 is a diagrammatic cross-sectional representation of an electroluminescent device according to the present invention and intended for carrying out a method of dimensioning one and / or the other of the front electrodes and rear according to the invention
- FIG. 8 is a graphical representation of the evolution of the cost density (along the vertical axis) as a function of the distance from the center (horizontal axis).
- the invention described in detail below implements an electroluminescent device comprising an electroluminescent structure whose thermal management is ensured for a new electrode architecture (called first electrode).
- the first electrode is adapted to impose a decrease of the current density passing through the electroluminescent structure of a first region towards a second region of the contact surface between the electrode and the face concerned. More particularly, the current density has a maximum at the first region of the contact surface, and decreases toward the second region.
- the architecture of the electrodes makes it possible to limit the temperature difference within the electroluminescent structure.
- the architecture of the first electrode makes it possible to limit the increase by Joule effect of the temperature of the outline of the electroluminescent structure with respect to its center, without necessarily using a thick support substrate.
- the first region as defined in the present invention is a region at which the current density likely to be injected into the electroluminescent device is the largest.
- electroluminescent device we mean a device that includes a light emitting structure, a first electrode, and a second electrode.
- the first electrode electrically contacts one or the other of the first and second faces, while the second electrode electrically contacts one or the other of the first and second faces which is not in contact with the first electrode.
- the presence of the second electrode is at least implicit, and therefore is not necessarily specified.
- the electroluminescent device 100 according to the present invention is now described in connection with FIGS. 3, 4a, 4b, 5, 6a and 6b.
- the electroluminescent device 100 comprises at least one electroluminescent structure 110.
- electroluminescent structure is meant a structure which, when it is crossed by a current, emits light.
- the at least one electroluminescent structure may be square in shape, and on the side between 3 and 400 ⁇ .
- the electroluminescent device 100 may comprise a plurality of light-emitting structures 110 arranged, for example, in matrix form.
- matrix form we mean a mesh with N rows and M columns.
- Each electroluminescent structure 110 is then disposed at the intersection of a line with a column of the mesh.
- Two adjacent electroluminescent structures may be separated by a trench having a width of less than 3 ⁇ , advantageously less than 1 ⁇ .
- the electroluminescent structure 110 comprises a first face 120 and a second face 130 substantially parallel.
- the front face of the electroluminescent structure is a face through which said structure is capable of emitting light radiation.
- the first face 120 includes a center 120C and a contour 120B.
- the second face 130 includes a center 130C and a contour 130B.
- center of a face we mean the centroid of said face.
- the electroluminescent device 100 may be interfaced with an interposer via an electrode formed on the rear face 130 of the electroluminescent structure 110 (said electrode is so-called back electrode).
- An electrode in contact with the front face is called the front electrode.
- the contact surface between the front electrode and the front face is said front contact surface.
- An electrode in contact with the rear face is called the back electrode.
- the contact surface between the rear electrode and the rear face is said rear contact surface.
- the electroluminescent structure 110 may comprise from its front face 120 towards its rear face 130, an electroluminescent layer 140 resting on a support substrate 150, the electroluminescent structure 110 having a thickness of less than 10 ⁇ , advantageously less than 5 ⁇ .
- the support substrate 150 may, for example, comprise silicon.
- the electroluminescent layer 140 may comprise an active layer 111 interposed between a first semiconductor layer 112 and a second semiconductor layer 113.
- the first semiconductor layer 112 may comprise n-type GaN (n-type means doped with electron donor species).
- the second semiconductor layer 113 may comprise p-type GaN (p-type means doped with hole donor species).
- the active layer 111 may comprise at least one of the materials chosen from: GaN, GaAs, InGaN, InGaAIP.
- the active layer 111, the first semiconductor layer 112 and the second semiconductor layer 113 may be formed by epitaxial film deposition techniques on a substrate.
- Trenches are also formed at the level of the films formed by epitaxy so as to delimit the electroluminescent structures 110 (we speak of "pixelization"), but also in the substrate to electrically isolate said electroluminescent structures 110.
- the substrate is then thinned to a thickness of less than 20 ⁇ , advantageously less than 10 ⁇ , and even more advantageously less than 5 ⁇ . Thinning techniques, and maintaining by temporary substrates (also called “handles”) are known to those skilled in the art and are therefore not described in detail in the present invention.
- the electroluminescent structure 110 may include nanowires 200 perpendicular to the front face.
- Each nanowire 200 may comprise, without limitation, a stack formed of an InGaN-n zone 201, an active zone 202, a GaN-p 203 zone or InGaN-p zone.
- the electroluminescent device 100 also has a first electrode 160 adapted to impose the passage of a current (or a current density) through the electroluminescent structure 110.
- the first electrode (160, 170) is in contact, advantageously in direct contact, along a contact surface 121, 131, with one or other of the first 120 and second 130 faces.
- the first electrode 160, 170 is shaped to impose a decay, from a first region and towards a second region of the contact surface 121, 131, of a current density capable of passing through the electroluminescent structure 110.
- First and second regions are two regions belonging to the contact surface.
- the contact surface includes a center and an outline.
- the first region may include the center (we now refer to the central region) of the contact area.
- the current density can be maximum at the level of the first region.
- the first region is in correspondence with a feed contact of the front or rear electrode considered.
- two elements are in correspondence when they are positioned one on the other opposite sides of the electrode, and project on each other according to the thickness of said electrode.
- the first electrode has a decreasing thickness profile in at least two opposite directions from the center to the contour of the contact surface.
- the second region is assumed to be adjacent to the contour of the contact surface.
- the skilled person with his general knowledge and description can easily generalize the present invention to a first region that is not central, for example, the first region may be adjacent to an edge of the contact surface.
- the first electrode is shaped to impose a decay, in at least two opposite directions from the center to the contour of the contact surface (ie from the first region to the second region), a current density susceptible passing through said face, said current density also having a maximum in the center of said contact surface.
- the first electrode 160, 170 has a decreasing thickness profile from the center to the contour of the contact surface 121, 131. More particularly, the thickness profile is decreasing in the two opposite directions. from the center to the contour.
- the first electrode may advantageously completely cover one or the other of the first 120 or second 130 faces of the electroluminescent structure 110.
- the thickness profile comprises bearings parallel to one or the other of the first and second faces.
- FIG. 4a shows the electroluminescent device 100 provided with a first electrode (in this example on the front face) according to the invention and having a decreasing thickness profile from the center to the step contour.
- Such an electrode can be obtained by successive steps of masking by photolithography and etching of an electrode of substantially constant thickness.
- the first electrode may have a decreasing monotonic thickness profile and continuous from the center to the contour (Figure 4b).
- the manufacture of this electrode may comprise the following successive steps:
- etching step until the at least partial removal of the lithographic photoresist layer (the etching step may advantageously be performed by an argon or oxygen plasma).
- the thickness profile of the electrode is in accordance with the thickness profile of the photolithographic resin layer at the end of creep step c).
- the first electrode 160, 170 may comprise a transparent conductive oxide.
- the transparent conductive oxide may comprise at least one of the following materials: indium tin oxide (ITO), zinc oxide (ZnO), zinc oxide doped with gallium (GZO), zinc oxide doped with gallium and indium (IGZO), zinc oxide doped with aluminum (AZO), zinc oxide doped with gallium and aluminum (AGZO), cadmium oxide doped with indium, tin dioxide (Sn0 2 ).
- ITO indium tin oxide
- ZnO zinc oxide
- ZnO zinc oxide doped with gallium
- IGZO zinc oxide doped with gallium and indium
- AZO zinc oxide doped with aluminum
- AGZO zinc oxide doped with gallium and aluminum
- the first electrode 160, 170 may comprise a metal.
- the metal may comprise at least one of the metals selected from: Cu, Al, Ti, Ni, Ag, Pd, Pt, Rh, Au, In.
- the aforementioned elements may be in the form of ink, for example with at least one of the compounds chosen from: DEPOT-PSS (poly (3,4-ethylenedioxythiophene) and poly (styrene) sulfonate), graphene, carbon nanotubes.
- the thickness profile of the first electrode 160, 170 imposes a decrease of the center towards the contour of the current density passing through the electroluminescent structure.
- This decrease in current density is accompanied by both a standardization of the temperature within the electroluminescent structure, but also a decrease in the average temperature of the electroluminescent structure.
- the present invention also allows to consider electroluminescent structures of sizes smaller than those known from the state of the art.
- the at least partial removal of the support substrate also makes it possible to envisage matrices of flexible electroluminescent structures.
- the first electrode 160, 170 may comprise a material having a positive temperature coefficient (in other words an electrode having a positive coefficient thermistor behavior), advantageously, the material comprises at least one of the selected elements.
- a material having a positive temperature coefficient in other words an electrode having a positive coefficient thermistor behavior
- the material comprises at least one of the selected elements.
- Such a material has a variable resistivity when it is subjected to a temperature variation (as shown in Figure 5). More particularly, the electrical resistivity of said material increases with the temperature in the temperature range considered of the operation of the device.
- an electrode for example, made of such a material, auto regulates the current density passing through the electroluminescence structure as a function of the temperature prevailing locally at the face of the electroluminescent structure with which it is in contact.
- the thickness of the first electrode 160, 170 may be between 1 nm and 10 ⁇ .
- the first electrode 160, 170 may advantageously completely cover, respectively, one or the other of the first 120 and second 130 faces of the electroluminescent structure 110.
- FIGS. 6a and 6b illustrate an implementation of a third embodiment of a first electrode disposed on the rear face of the electroluminescent structure (the first electrode being in this case identified with a rear electrode).
- the first electrode 170 has a textured metal contact surface with the first face 130 (identified at the rear face), the textured metal contact surface comprising regions of metal contact 171 and regions free of metallic contact 172.
- textured metallic contact surface is meant a surface for which the metallic contact between an electrode and the face of the electroluminescent structure with which it is in contact is not homogeneous, in other words, the metallic contact varies from the center to the edge. .
- metal contact we mean a contact adapted to pass a current of an electrode to the electroluminescent structure and vice versa.
- the density of metal contact regions 171 may decrease from the center to the rear face contour 170.
- the regions free of metal contact 172 may comprise recesses formed in the rear electrode 170.
- recess formed in the electrode is meant a cavity formed in the volume of said electrode and from its contact surface.
- the recesses may be filled with a dielectric material.
- the dielectric material may comprise at least materials selected from: silicon dioxide, silicon nitride.
- the metal contact regions 171 may have a density decreasing from the center to the edge of the rear face 130.
- the metal contact regions 171 may have a circular shape
- the electroluminescent device may comprise a first and a second electrode, referred to respectively as front electrode and back electrode (or inversely as back electrode and front electrode), each disposed on a different face of the electroluminescent structure (the first and second faces).
- the front electrode 160 is in contact, in a front contact surface 121, with the front face 120
- the rear electrode 170 is in contact, in a rear contact surface 131, with the rear face 130.
- the second electrode is not in contact with an external face (in other words one or the other of the first and second faces), and contacts the electroluminescent structure via a through recess formed in the electroluminescent structure.
- the invention also relates to a method of dimensioning the first electrode 160, 170.
- the first electrode 160, 170 may advantageously be designed so that, in operation, the electroluminescent structure 110 has a temperature difference between the center and the lower edge at a predetermined distance, said deviation ⁇ / ⁇ ( ⁇ being the difference in temperature between the center and the contour in one of the two opposite directions, and T the temperature in the center of the front face 120 or rear 130 concerned). More particularly, it may be to size the first electrode 160, 170 adapted to impose a particular profile of the current density in the two opposite directions from the center to the contour of one or other of the first and second face. The particular profile of the current density corresponds to a ratio AJ / J (Ai being the deviation of the current density between the center and the contour in one of the two opposite directions, and J the current density in the center of the face before 120 or rear 130 concerned).
- the sizing method of the first electrode 160, 170 may comprise the following steps:
- step b) a step of producing the first electrode 160, 170 for producing the current density profile of step a).
- the electrode is meant the determination of the geometric characteristics and the choice of the forming material, and to achieve the current density profile determined in step a).
- the step a) of determining the current density profile can be executed so that the temperature difference between the center and the edge of one or the other of the first and second 120, 130 is less than a predetermined temperature difference, advantageously the predetermined temperature difference is less than 20 ° C, still more preferably less than 10 ° C, still more preferably less than 5 ° C.
- the step b) of producing the electrode comprises an adjustment of a thickness profile of the first electrode.
- the electroluminescent device illustrated in FIG. 7 comprises an electroluminescent structure of 253 ⁇ per 380 ⁇ (only a half-structure is represented in FIG. 7).
- the diagonal of said structure is therefore 456 ⁇ ( in the direction R shown in Figure 7).
- the front electrode 160 is made of indium and tin oxide (with an electrical resistivity of 3.12 ⁇ 10 -6 ohm.m) of thickness E 2 at the contour of 100 nm.
- the thickness Ei in the center can take the values given in the following table, and varies linearly from the center to the contour (according to the direction R):
- the electroluminescent structure may comprise a GaN layer of thickness equal to 5 ⁇ .
- Figure 8 gives an example of the evolution of the current density J (x) (on the vertical axis) as a function of the distance from the center x (along the horizontal axis), for a thickness in the center of the front electrode equal to 200 nm, and Jo represents the current density at the center of the front electrode 160.
- the current density profile obtained for each of the thicknesses is associated with a temperature difference between the center and the edge of the relevant face (front or rear).
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1663191A FR3061360A1 (fr) | 2016-12-22 | 2016-12-22 | Dispositif electroluminescent |
PCT/FR2017/053637 WO2018115670A1 (fr) | 2016-12-22 | 2017-12-18 | Dispositif electroluminescent |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3560001A1 true EP3560001A1 (fr) | 2019-10-30 |
Family
ID=58228277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17832085.9A Withdrawn EP3560001A1 (fr) | 2016-12-22 | 2017-12-18 | Dispositif electroluminescent |
Country Status (6)
Country | Link |
---|---|
US (1) | US20200035864A1 (fr) |
EP (1) | EP3560001A1 (fr) |
KR (1) | KR20190094464A (fr) |
CN (1) | CN110100320A (fr) |
FR (1) | FR3061360A1 (fr) |
WO (1) | WO2018115670A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3076170B1 (fr) | 2017-12-22 | 2020-05-15 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de report de structures electroluminescentes |
FR3104809B1 (fr) * | 2019-12-11 | 2021-12-17 | Commissariat Energie Atomique | Procede de realisation d’une couche de materiau structuree |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261379A (ja) * | 2001-03-02 | 2002-09-13 | Mitsubishi Electric Corp | 半導体デバイスおよびそれを応用した光半導体デバイス |
DE10147887C2 (de) * | 2001-09-28 | 2003-10-23 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit einem Kontakt, der eine Mehrzahl von voneinander beabstandeten Kontaktstellen umfaßt |
US7269195B2 (en) * | 2002-03-04 | 2007-09-11 | Quintessence Photonics Corporation | Laser diode with an amplification section that has a varying index of refraction |
JP2007123517A (ja) * | 2005-10-27 | 2007-05-17 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
TWI331816B (en) * | 2007-04-03 | 2010-10-11 | Advanced Optoelectronic Tech | Semiconductor light-emitting device |
KR101007130B1 (ko) * | 2009-02-18 | 2011-01-10 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
WO2011033625A1 (fr) * | 2009-09-16 | 2011-03-24 | 株式会社 東芝 | Élément électroluminescent à semi-conducteur |
US9548286B2 (en) * | 2010-08-09 | 2017-01-17 | Micron Technology, Inc. | Solid state lights with thermal control elements |
US8664684B2 (en) * | 2010-08-31 | 2014-03-04 | Micron Technology, Inc. | Solid state lighting devices with improved contacts and associated methods of manufacturing |
WO2013000481A1 (fr) * | 2011-06-29 | 2013-01-03 | Martin Professional A/S | Dispositif d'éclairage à mélange de couleurs |
JP5395887B2 (ja) * | 2011-12-26 | 2014-01-22 | 株式会社東芝 | 半導体発光素子 |
FR3012676A1 (fr) | 2013-10-25 | 2015-05-01 | Commissariat Energie Atomique | Diode electroluminescente a puits quantiques separes par des couches barrieres d'ingan a compositions d'indium variables |
CN105742450B (zh) * | 2016-04-07 | 2018-03-02 | 南昌大学 | 可照射出特定平面几何图形光斑led芯片的制备方法及结构 |
-
2016
- 2016-12-22 FR FR1663191A patent/FR3061360A1/fr not_active Withdrawn
-
2017
- 2017-12-18 EP EP17832085.9A patent/EP3560001A1/fr not_active Withdrawn
- 2017-12-18 US US16/472,037 patent/US20200035864A1/en not_active Abandoned
- 2017-12-18 KR KR1020197021463A patent/KR20190094464A/ko not_active Application Discontinuation
- 2017-12-18 WO PCT/FR2017/053637 patent/WO2018115670A1/fr unknown
- 2017-12-18 CN CN201780080012.1A patent/CN110100320A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
FR3061360A1 (fr) | 2018-06-29 |
US20200035864A1 (en) | 2020-01-30 |
WO2018115670A1 (fr) | 2018-06-28 |
CN110100320A (zh) | 2019-08-06 |
KR20190094464A (ko) | 2019-08-13 |
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