EP3546072A1 - Sound transducer and method of manufacturing - Google Patents
Sound transducer and method of manufacturing Download PDFInfo
- Publication number
- EP3546072A1 EP3546072A1 EP18164020.2A EP18164020A EP3546072A1 EP 3546072 A1 EP3546072 A1 EP 3546072A1 EP 18164020 A EP18164020 A EP 18164020A EP 3546072 A1 EP3546072 A1 EP 3546072A1
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- EP
- European Patent Office
- Prior art keywords
- metal layer
- substrate
- layer
- photo resist
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 95
- 239000002184 metal Substances 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 17
- 238000001039 wet etching Methods 0.000 claims abstract description 14
- 239000012528 membrane Substances 0.000 claims description 33
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 230000000873 masking effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
Definitions
- the present disclosure relates to sound transducers and a method for manufacturing sound transducers.
- WO 01/97562 A2 relates to capacitive micromachined ultrasonic transducers, cMUT.
- Each transducer comprises a charged membrane plate capacitively opposing an oppositely charged base plate.
- the membrane plate is distended toward the base plate by a bias charge.
- the base plate includes a central portion elevated toward the center of the membrane plate to cause the charge of the transducer to be of maximum density at the moving center of the membrane plate.
- the drive pulses applied to the transducer are predistorted in consideration of the nonlinear operation of the device to reduce contamination of the transmit signal at the harmonic band.
- the cMUTs can be fabricated by conventional semiconductor processes and hence integrated with ancillary transducer circuitry such as a bias charge regulator.
- the cMUTs can also be fabricated by micro-stereolithography whereby the transducers can be formed using a variety of polymers and other materials.
- the present invention provides a sound transducer and a method of manufacturing a sound transducer.
- the sound transducer provided by the present invention may be designed to emit/sense ultrasound/ultrasonic waves/ultrasonic signals.
- the sound transducer may be part of a sound transducer array.
- the method comprises depositing a first metal layer onto a substrate, applying a photo resist layer to the first metal layer, exposing portions of the photo resist layer to electromagnetic radiation, developing the photo resist layer, removing portions of the first metal layer, wet etching portions of the substrate above which the first metal layer has been removed, and depositing a second metal layer onto the substrate.
- the term “layer” as used throughout the description and the claims may also refer to a homogeneous material that has been applied to (zones on) the surface of the substrate or the material stack in a single (continuous) material deposition step, even if parts of the homogeneous material are removed in a subsequent processing step.
- the term “layer”, as used throughout the description and the claims has a twofold meaning in that it can refer to geometric parameters of a homogeneous material (i.e., homogeneous material in form of a layer) and/or to the circumstances under which the homogeneous material has been deposited (i.e., homogeneous material that coats (parts of) a structure/material stack).
- metal layer particularly refers to a layer of a homogeneous material which contains metal (e.g., material which is comprised of more than 50%, more than 75%, more than 90%, or more than 99% metal).
- substrate particularly refers to a solid (usually planar) substance which serves as a foundation for structures to be deposited thereon. Typically, the substrate has a uniform thickness which is larger than the thickness of a layer deposited on or above the substrate and provides for structural robustness. Moreover, the substrate may be cut into pieces upon singulation.
- photo resist particularly refers to materials which are sensitive to electromagnetic radiation and allow forming a patterned coating on a surface. I.e., upon exposing areas of a photo resist surface to electromagnetic radiation (e.g., while masking those areas that are not to be exposed), the physical and/or chemical properties of the photo resist can be changed. The desired change in physical and/or chemical properties is such that upon application of a developer, the exposed or unexposed areas of the photo resist can be easily removed, while the remaining areas resist the developer and hence form a (patterned) coating on the surface, on which the photo resist has been deposited.
- masking is to include any means which avoids that an area or areas of the photo resist surface are exposed to electromagnetic radiation.
- masking may involve one or more masks which block electromagnetic radiation.
- an optical device may be used which allows subsequently focusing an electromagnetic beam onto particular areas.
- the invention is not limited to any of the above exposure techniques and any other means that allows for selective exposure may be used instead.
- the above method is particularly useful in manufacturing capacitive micromachined sound (e.g. ultrasonic) transducers based on photolithography and wet etching, as the first metal layer provides an adhesion layer which reduces/avoids delamination of the photo resist layer during wet etching.
- capacitive micromachined sound e.g. ultrasonic
- the second metal layer may be deposited onto a bottom of at least one cavity in the substrate.
- capacitive micromachined sound transducers may be manufactured in parallel on a common substrate.
- the at least one cavity may be formed by the wet etching.
- dimensions of the at least one cavity may be larger than dimensions of a corresponding opening in the first metal layer.
- the length and the width (or the diameter) of the opening may be smaller than the length and the width (or the diameter) of the at least one cavity, such that the first metal layer (and the photo resist above the first metal layer) masks the deposition of the second metal layer onto the bottom of the at least one cavity.
- the edge of the opening in the first metal layer may protrude beyond and mask a sidewall of the at least one cavity when depositing the second metal layer onto the substrate.
- the protruding edge may avoid that the second metal layer extends along the sloped sidewalls of the at least one cavity.
- the wet etching may comprise undercutting the substrate.
- the substrate may comprise glass.
- the first metal layer may comprise chromium or platinum.
- the method further comprises removing the first metal layer and providing at least one membrane above the at least one cavity.
- a part of the membrane may be free to move relative to the substrate.
- the at least one membrane may comprise silicon.
- the silicon membrane may be bonded to the substrate and have a thickness/elasticity that allows for a resonance frequency above 20 kHz.
- the method further comprises depositing a third metal layer onto the at least one membrane.
- the third metal layer may serve as a second electrode, while the second metal layer may serve a first electrode of the transducer.
- the third metal layer comprises chromium or platinum.
- the third metal layer can be used for facilitating consecutive membrane patterning steps, as the chromium/platinum may serve as an etch stop layer.
- the method further comprises etching a portion of the membrane, wherein the third metal layer serves as an etch-stop layer.
- a portion of the membrane on which the third metal layer has not been deposited may be removed by dry-etching while the portion of the membrane on which the third metal layer has been deposited may be protected from the etchant by the third metal layer.
- the sound transducer comprises a first electrode, and a second electrode, wherein the first electrode is arranged on a bottom of a cavity, the cavity being formed in a glass substrate, the second electrode is arranged on a membrane, the membrane being placed above and traversing the cavity, the first electrode comprises a first metal, and the second electrode comprises a second metal.
- electrode as used throughout the description and the claims, particularly refers to metal layers which are connected to circuitry.
- the circuitry may be arranged on the substrate and may be connected to an energy source that powers the operation of the circuitry.
- the circuitry may be configured to allow controlling the voltage between two electrodes to excite the membrane to vibrations.
- the circuitry may be configured to sense a voltage or current between the electrodes.
- the second metal may be different from the first metal.
- the first metal may be aluminum, copper, or gold and/or the second metal may be chromium or platinum.
- the sound transducer is configured to emit and/or sense ultrasonic waves.
- ultrasonic waves as used throughout the description and the claims, particularly refers to pressure waves with a wavelength in the range of several centimeters and below.
- Fig. 1 shows a schematic cross-sectional view of a substrate 10.
- the substrate 10 may be a glass.
- the glass may comprise boron and/or silicon.
- the substrate 10 may be a disc or a (rectangular) sheet of borosilicate glass.
- a photo resist layer 12 may be deposited above the substrate 10.
- a first metal layer 14 (which may serve as an adhesion layer) may be arranged between the substrate 10 and the photo resist layer 12.
- the adhesion layer 14 may comprise a reactive metal such as chromium or platinum or any other material which increases adhesion between the substrate 10 and the photo resist layer 12.
- Fig. 4 illustrates the exposure of a portion 16a of the photo resist layer 12 to electromagnetic radiation.
- the electromagnetic radiation may be blocked from portions 16b, 16c of the photo resist layer 12 by a mask 18, while the portion 16a of the photo resist layer 12 from which electromagnetic radiation is not blocked is exposed to the electromagnetic radiation.
- the physical and/or chemical properties of the exposed portion 16a may change.
- the change in physical and/or chemical properties may be such that the exposed portion 16a becomes soluble to a developer (solvent), e.g., an aqueous solution.
- solvent e.g., an aqueous solution.
- Fig. 4 illustrates the usage of a positive photo resist.
- the present disclosure is not limited to the usage of a positive photo resist. Rather, the present disclosure may also be practiced in the context of a negative photo resist. If a negative photo resist is used, the portion 16a may be masked and the portions 16b, 16c may be exposed to electromagnetic radiation. Moreover, as an alternative to masking the photo resist layer 12, the photo resist layer 12 may be selectively exposed to electromagnetic radiation by focusing an electromagnetic beam successively onto portions 16a, 16b, 16c of the photo resist layer 12 which are to be exposed.
- the portion of the first metal layer 14 below the removed portion 16a of the photo resist layer 12 may be removed.
- the portion of the first metal layer 14 below the removed portion 16a of the photo resist layer 12 may be removed by wet etching, such that an opening is formed in the first metal layer 14 which is framed/encircled by the edge 20 of the first metal layer 14, as shown in Fig. 6 .
- a cavity may be formed in the substrate 10.
- a wet etchant may be applied to the surface of the substrate 10 which has been exposed by removing the portion of the first metal layer 14.
- the wet etchant may comprise hydrogen fluoride and/or nitric acid.
- the first metal layer 14 may be resistant to the wet etchant while the substrate material may be etched away.
- the wet etchant may not only remove substrate material in the vertical direction but may also remove substrate material in the horizontal direction such that a cavity 22 is formed in the substrate 10 which extends below the edge 20 of the first metal layer 14.
- the length and the width/the diameter of the cavity 22 may be larger than the length and the width/the diameter of the opening in the first metal layer 14.
- the sloped sidewall 24 of the cavity 22 may be masked by the first metal layer 14 and the portions 16b, 16c of the photo resist layer 12 above the first metal layer 14 (when viewed in a direction which is perpendicular to the surface of the first metal layer 14).
- a second metal layer 26 which is deposited onto the substrate 10/onto the bottom of the cavity 22 extends along the sloped sidewall 24, as shown in Fig. 8 .
- the deposition of the second metal layer 26 may involve physical or chemical vapor deposition.
- the second metal layer 26 may comprise a metal with high electric conductivity such as aluminum, copper, or gold.
- the second metal layer 26 may comprise a conductive trace 28 formed in a channel in the substrate 10. The channel may be formed together with the cavity 22 by applying a wet etchant to exposed surface portions of the substrate 10.
- the channel may also be formed before or after the cavity 22 has been formed.
- the conductive trace 28 allows employing the second metal layer 26 at the bottom of the cavity 22 as a first electrode 26.
- Fig. 9 and Fig. 10 illustrate the removal of the developed photo resist layer 12 and the first metal layer 14 in a lift-off process.
- the developed photo resist layer 12 may be removed by spraying acetone onto the material stack or by immersing the material stack (top-side down) into acetone.
- the first metal layer 14 may be removed by dry or wet etching.
- a silicon wafer 30 e.g., an epitaxial silicon wafer 30
- the silicon wafer 30 may comprise a silicon substrate 32, an oxide layer 34 and a (monocrystalline) silicon membrane 36.
- the silicon substrate 32 may comprise boron.
- the silicon substrate 32 may be removed by dry or wet etching.
- a second electrode 38 may be formed on the membrane 36 by vapor deposition or sputtering.
- the forming of the second electrode 38 may comprise depositing a third metal layer 38 on a portion of the membrane 36 while masking (e.g., using a shadow mask) other portions of the material stack or coating the other portions with a photo resist layer that is removed after deposition, as shown in Fig. 13 .
- the third metal layer 38 may also serve as an etch-stop layer when patterning the membrane 36, as shown in Fig. 14 .
- the patterning may involve dry etching (e.g., using inductive coupled plasma).
- the third metal layer 38 may comprise platinum or chromium.
- the circuitry 42 may apply an alternating current across the electrodes 26, 38 which excites the membrane 36 to vibrations.
- the capacitive sound transducer 40 may produce ultrasonic waves.
- the circuitry 42 may sense an alternating signal as the capacitance of the electrodes 26, 38 is varied.
- the sound transducer 40 may allow emitting and/or sensing sound waves.
- the sound transducer 40 may be arranged in an array of sound transducers 40 on a wafer or chip 44.
- the wafer or chip 44 may comprise the (glass) substrate 10 and the sound transducers 40 of the array (which may for example to several thousand sound transducers 40) may be manufactured in parallel (using the above-described process steps).
- the circuitry 42 may be placed on the top-side of the wafer or chip 44.
- the circuitry 42 may be flip-chip-packaged to the top-side of the wafer or chip 44.
- the circuitry 42 may also be placed on the back-side of the wafer or chip 44.
- the circuitry 42 may be flip-chip-packaged to the back-side of the wafer or chip 44, while the electrodes 26, 38 may be connected to the circuitry 42 through traces 28 and/or vias.
- Fig. 18 shows a flow-chart of the process for manufacturing the sound transducer 40.
- the process starts with the step 46 of depositing the first metal layer 14 onto the substrate 10, as described in more detail in relation to Fig. 1 and 2 .
- the process is continued with the step 48 of applying the photo resist layer 12 to the first metal layer 14, as described in more detail in relation to Fig. 3 .
- portions of the photo resist layer 12 are exposed to electromagnetic radiation in step 50 and the photo resist layer 12 is developed in step 52, as described in more detail in relation to Fig. 4 and Fig. 5 .
- step 54 portions of the first metal layer 14 are removed and at step 56, portions of the substrate 10 above which the first metal layer 14 has been removed are wet-etched, as described in more detail in relation to Fig. 6 and Fig. 7 .
- step 56 the process concludes with depositing a second metal layer 26 onto the substrate 10, as described in more detail in relation to Fig. 8 .
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
Description
- The present disclosure relates to sound transducers and a method for manufacturing sound transducers.
-
WO 01/97562 A2 - For harmonic operation, the drive pulses applied to the transducer are predistorted in consideration of the nonlinear operation of the device to reduce contamination of the transmit signal at the harmonic band. The cMUTs can be fabricated by conventional semiconductor processes and hence integrated with ancillary transducer circuitry such as a bias charge regulator. The cMUTs can also be fabricated by micro-stereolithography whereby the transducers can be formed using a variety of polymers and other materials.
- The present invention provides a sound transducer and a method of manufacturing a sound transducer. The sound transducer provided by the present invention may be designed to emit/sense ultrasound/ultrasonic waves/ultrasonic signals. Moreover, during manufacturing and/or employment, the sound transducer may be part of a sound transducer array.
- The method comprises depositing a first metal layer onto a substrate, applying a photo resist layer to the first metal layer, exposing portions of the photo resist layer to electromagnetic radiation, developing the photo resist layer, removing portions of the first metal layer, wet etching portions of the substrate above which the first metal layer has been removed, and depositing a second metal layer onto the substrate.
- In this regard, the term "sound transducer", as used throughout the description and the claims, particularly refers to devices that are configured to convert electric energy to acoustic energy and/or acoustic energy to electric energy. Moreover, the term "layer", as used throughout the description and the claims, particularly refers to a substantially homogeneous material with a planar surface. Furthermore, the term "layer" as used throughout the description and the claims, may also refer to a homogeneous material that has been applied to different (discontinuous) zones on the surface of the substrate or a material stack (e.g., one or more layers on/above the substrate), and has a substantially uniform thickness.
- In addition, the term "layer" as used throughout the description and the claims, may also refer to a homogeneous material that has been applied to (zones on) the surface of the substrate or the material stack in a single (continuous) material deposition step, even if parts of the homogeneous material are removed in a subsequent processing step. Thus, the term "layer", as used throughout the description and the claims, has a twofold meaning in that it can refer to geometric parameters of a homogeneous material (i.e., homogeneous material in form of a layer) and/or to the circumstances under which the homogeneous material has been deposited (i.e., homogeneous material that coats (parts of) a structure/material stack).
- Moreover, the term "metal layer", as used throughout the description and the claims, particularly refers to a layer of a homogeneous material which contains metal (e.g., material which is comprised of more than 50%, more than 75%, more than 90%, or more than 99% metal). Furthermore, the term "substrate", as used throughout the description and the claims, particularly refers to a solid (usually planar) substance which serves as a foundation for structures to be deposited thereon. Typically, the substrate has a uniform thickness which is larger than the thickness of a layer deposited on or above the substrate and provides for structural robustness. Moreover, the substrate may be cut into pieces upon singulation.
- In addition, the term "photo resist", as used throughout the description and the claims, particularly refers to materials which are sensitive to electromagnetic radiation and allow forming a patterned coating on a surface. I.e., upon exposing areas of a photo resist surface to electromagnetic radiation (e.g., while masking those areas that are not to be exposed), the physical and/or chemical properties of the photo resist can be changed. The desired change in physical and/or chemical properties is such that upon application of a developer, the exposed or unexposed areas of the photo resist can be easily removed, while the remaining areas resist the developer and hence form a (patterned) coating on the surface, on which the photo resist has been deposited.
- In this regard, the term "masking" as used throughout the description and the claims, is to include any means which avoids that an area or areas of the photo resist surface are exposed to electromagnetic radiation. For instance, masking may involve one or more masks which block electromagnetic radiation. As an alternative to masking (which is also envisaged by the present invention), an optical device may be used which allows subsequently focusing an electromagnetic beam onto particular areas. However, the invention is not limited to any of the above exposure techniques and any other means that allows for selective exposure may be used instead.
- Moreover, the formulation "removing portions of a layer", as used throughout the description and the claims, particularly refers to (completely) removing layer-material from one or more surface areas. Furthermore, the formulation "wet etching", as used throughout the description and the claims, particularly refers to processes that make use of liquid chemicals (etchants) to dissolve material (e.g., by oxidizing the material) and remove the dissolved (e.g., oxidized) material. In addition, the formulation "depositing a layer", as used throughout the description and the claims, particularly refers to processes that allow growing a material on (areas of) a surface such as, for example, physical or chemical vapor deposition.
- The above method is particularly useful in manufacturing capacitive micromachined sound (e.g. ultrasonic) transducers based on photolithography and wet etching, as the first metal layer provides an adhesion layer which reduces/avoids delamination of the photo resist layer during wet etching.
- In an embodiment, the second metal layer may be deposited onto a bottom of at least one cavity in the substrate.
- I.e. several capacitive micromachined sound transducers may be manufactured in parallel on a common substrate.
- In an embodiment, the at least one cavity may be formed by the wet etching.
- This allows manufacturing cavities with high precision (e.g., sub-micron tolerances), which improves the accuracy of the sound transducer(s).
- In an embodiment, dimensions of the at least one cavity may be larger than dimensions of a corresponding opening in the first metal layer.
- For instance, the length and the width (or the diameter) of the opening may be smaller than the length and the width (or the diameter) of the at least one cavity, such that the first metal layer (and the photo resist above the first metal layer) masks the deposition of the second metal layer onto the bottom of the at least one cavity.
- In an embodiment, the edge of the opening in the first metal layer may protrude beyond and mask a sidewall of the at least one cavity when depositing the second metal layer onto the substrate.
- Thus, the protruding edge may avoid that the second metal layer extends along the sloped sidewalls of the at least one cavity.
- In an embodiment, the wet etching may comprise undercutting the substrate.
- This may facilitate preventing that the second metal layer extends along the sloped sidewalls of the at least one cavity.
- In an embodiment, the substrate may comprise glass.
- Accordingly, the effort/costs for sound transducer manufacturing may be reduced.
- In an embodiment the first metal layer may comprise chromium or platinum.
- This may further improve the structural integrity of the layer stack during manufacturing.
- In an embodiment, the method further comprises removing the first metal layer and providing at least one membrane above the at least one cavity.
- Hence, a part of the membrane may be free to move relative to the substrate.
- In an embodiment, the at least one membrane may comprise silicon.
- For instance, the silicon membrane may be bonded to the substrate and have a thickness/elasticity that allows for a resonance frequency above 20 kHz.
- In an embodiment, the method further comprises depositing a third metal layer onto the at least one membrane.
- The third metal layer may serve as a second electrode, while the second metal layer may serve a first electrode of the transducer.
- In an embodiment, the third metal layer comprises chromium or platinum.
- Hence, the third metal layer can be used for facilitating consecutive membrane patterning steps, as the chromium/platinum may serve as an etch stop layer.
- In an embodiment, the method further comprises etching a portion of the membrane, wherein the third metal layer serves as an etch-stop layer.
- For example, a portion of the membrane on which the third metal layer has not been deposited may be removed by dry-etching while the portion of the membrane on which the third metal layer has been deposited may be protected from the etchant by the third metal layer.
- The sound transducer comprises a first electrode, and a second electrode, wherein the first electrode is arranged on a bottom of a cavity, the cavity being formed in a glass substrate, the second electrode is arranged on a membrane, the membrane being placed above and traversing the cavity, the first electrode comprises a first metal, and the second electrode comprises a second metal.
- In this regard, the term "electrode" as used throughout the description and the claims, particularly refers to metal layers which are connected to circuitry. The circuitry may be arranged on the substrate and may be connected to an energy source that powers the operation of the circuitry. The circuitry may be configured to allow controlling the voltage between two electrodes to excite the membrane to vibrations. Moreover, the circuitry may be configured to sense a voltage or current between the electrodes.
- In an embodiment, the second metal may be different from the first metal.
- In an embodiment, the first metal may be aluminum, copper, or gold and/or the second metal may be chromium or platinum.
- In an embodiment, the sound transducer is configured to emit and/or sense ultrasonic waves.
- In this regard, the term "ultrasonic waves" as used throughout the description and the claims, particularly refers to pressure waves with a wavelength in the range of several centimeters and below.
- It will be appreciated that the features and attendant advantages of the disclosed sound transducer may be realized by the disclosed method and vice versa. Moreover, it is noted that throughout the description, features in brackets are to be regarded as optional.
- The foregoing aspects and many of the attendant advantages will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein like reference numerals refer to like parts throughout the various views, unless otherwise specified.
-
Fig. 1 shows a schematic cross-sectional view of a substrate; -
Fig. 2 illustrates the formation of an adhesion layer on the substrate ofFig. 1 ; -
Fig. 3 illustrates the formation of a photo resist layer on the material stack ofFig. 2 ; -
Fig. 4 illustrates the exposure of a portion of the photo resist layer to electromagnetic radiation; -
Fig. 5 illustrates developing the photo resist layer; -
Fig. 6 illustrates etching the adhesion layer; -
Fig. 7 illustrates wet etching a cavity into the substrate; -
Fig. 8 illustrates the formation of an electrode at the bottom of the substrate; -
Fig. 9 and Fig. 10 illustrate the removal of the developed photo resist layer and the adhesion layer; -
Fig. 11 and12 illustrate bonding a membrane to the substrate; -
Fig. 13 and Fig. 14 illustrate forming a second electrode on the membrane; -
Fig. 15 shows an array of sound transducers on a wafer or chip; -
Fig. 16 shows an array of sound transducers and circuitry for operating the sound transducers; -
Fig. 17 shows circuitry for operating a sound transducer array; and -
Fig. 18 shows a flow-chart of a process for manufacturing a sound transducer. - Notably, the drawings are not drawn to scale and unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
-
Fig. 1 shows a schematic cross-sectional view of asubstrate 10. Thesubstrate 10 may be a glass. The glass may comprise boron and/or silicon. For example, thesubstrate 10 may be a disc or a (rectangular) sheet of borosilicate glass. As shown inFig. 2 and Fig. 3 , a photo resistlayer 12 may be deposited above thesubstrate 10. In order to increase structural stability of the material stack, a first metal layer 14 (which may serve as an adhesion layer) may be arranged between thesubstrate 10 and the photo resistlayer 12. Theadhesion layer 14 may comprise a reactive metal such as chromium or platinum or any other material which increases adhesion between thesubstrate 10 and the photo resistlayer 12. -
Fig. 4 illustrates the exposure of aportion 16a of the photo resistlayer 12 to electromagnetic radiation. For example, the electromagnetic radiation may be blocked fromportions layer 12 by amask 18, while theportion 16a of the photo resistlayer 12 from which electromagnetic radiation is not blocked is exposed to the electromagnetic radiation. Upon exposure of theportion 16a of the photo-resistlayer 12 to electromagnetic radiation, the physical and/or chemical properties of the exposedportion 16a may change. The change in physical and/or chemical properties may be such that the exposedportion 16a becomes soluble to a developer (solvent), e.g., an aqueous solution. Thus, after exposure to electromagnetic radiation, it may be possible to wash the exposedportion 16a of the photo resistlayer 12 away by spraying said solution onto the material stack or by immersing the material stack into said solution. - In this regard, it is noted that
Fig. 4 illustrates the usage of a positive photo resist. However, the present disclosure is not limited to the usage of a positive photo resist. Rather, the present disclosure may also be practiced in the context of a negative photo resist. If a negative photo resist is used, theportion 16a may be masked and theportions layer 12, the photo resistlayer 12 may be selectively exposed to electromagnetic radiation by focusing an electromagnetic beam successively ontoportions layer 12 which are to be exposed. - After the exposed
portion 16a of the photo resistlayer 12 has been removed as shown inFig. 5 , the portion of thefirst metal layer 14 below the removedportion 16a of the photo resistlayer 12 may be removed. For example, the portion of thefirst metal layer 14 below the removedportion 16a of the photo resistlayer 12 may be removed by wet etching, such that an opening is formed in thefirst metal layer 14 which is framed/encircled by theedge 20 of thefirst metal layer 14, as shown inFig. 6 . - After removing the portion of the
first metal layer 14 below the removed portion of the photo resistlayer 12, a cavity may be formed in thesubstrate 10. For example, a wet etchant may be applied to the surface of thesubstrate 10 which has been exposed by removing the portion of thefirst metal layer 14. The wet etchant may comprise hydrogen fluoride and/or nitric acid. In particular, the wet etchant may be an aqueous solution containing hydrogen fluoride and nitric acid (e.g., HF:HNO3:H2O = 4.4:200:200). - As can be seen in
Fig. 7 , thefirst metal layer 14 may be resistant to the wet etchant while the substrate material may be etched away. The wet etchant may not only remove substrate material in the vertical direction but may also remove substrate material in the horizontal direction such that acavity 22 is formed in thesubstrate 10 which extends below theedge 20 of thefirst metal layer 14. Hence, the length and the width/the diameter of thecavity 22 may be larger than the length and the width/the diameter of the opening in thefirst metal layer 14. I.e., the slopedsidewall 24 of thecavity 22 may be masked by thefirst metal layer 14 and theportions layer 12 above the first metal layer 14 (when viewed in a direction which is perpendicular to the surface of the first metal layer 14). - By this, it can be prevented that a
second metal layer 26 which is deposited onto thesubstrate 10/onto the bottom of thecavity 22 extends along the slopedsidewall 24, as shown inFig. 8 . The deposition of thesecond metal layer 26 may involve physical or chemical vapor deposition. Moreover, thesecond metal layer 26 may comprise a metal with high electric conductivity such as aluminum, copper, or gold. Furthermore, thesecond metal layer 26 may comprise aconductive trace 28 formed in a channel in thesubstrate 10. The channel may be formed together with thecavity 22 by applying a wet etchant to exposed surface portions of thesubstrate 10. Moreover, the channel may also be formed before or after thecavity 22 has been formed. Theconductive trace 28 allows employing thesecond metal layer 26 at the bottom of thecavity 22 as afirst electrode 26. -
Fig. 9 and Fig. 10 illustrate the removal of the developed photo resistlayer 12 and thefirst metal layer 14 in a lift-off process. For instance, the developed photo resistlayer 12 may be removed by spraying acetone onto the material stack or by immersing the material stack (top-side down) into acetone. Following the removal of the developed photo resistlayer 12, thefirst metal layer 14 may be removed by dry or wet etching. After lift-off, a silicon wafer 30 (e.g., an epitaxial silicon wafer 30) may be anodically or adhesively bonded to thesubstrate 10, as shown inFig. 11 . Thesilicon wafer 30 may comprise asilicon substrate 32, anoxide layer 34 and a (monocrystalline)silicon membrane 36. Thesilicon substrate 32 may comprise boron. As shown inFig. 12 , thesilicon substrate 32 may be removed by dry or wet etching. - After removal of the
silicon substrate 32, asecond electrode 38 may be formed on themembrane 36 by vapor deposition or sputtering. The forming of thesecond electrode 38 may comprise depositing athird metal layer 38 on a portion of themembrane 36 while masking (e.g., using a shadow mask) other portions of the material stack or coating the other portions with a photo resist layer that is removed after deposition, as shown inFig. 13 . Thethird metal layer 38 may also serve as an etch-stop layer when patterning themembrane 36, as shown inFig. 14 . The patterning may involve dry etching (e.g., using inductive coupled plasma). In particular, thethird metal layer 38 may comprise platinum or chromium. After patterning themembrane 36, the material stack may form acapacitive sound transducer 40 which is ready for operation upon connecting the first andsecond electrodes suitable circuitry 42. - The
circuitry 42 may apply an alternating current across theelectrodes membrane 36 to vibrations. Depending on the physical properties of themembrane 36 and the frequency of the alternating current, thecapacitive sound transducer 40 may produce ultrasonic waves. Moreover, if sound waves (e.g., ultrasonic waves) are applied to themembrane 36 of thebiased sound transducer 40, thecircuitry 42 may sense an alternating signal as the capacitance of theelectrodes sound transducer 40 may allow emitting and/or sensing sound waves. - As shown in
Fig. 15 , thesound transducer 40 may be arranged in an array ofsound transducers 40 on a wafer orchip 44. The wafer orchip 44 may comprise the (glass)substrate 10 and thesound transducers 40 of the array (which may for example to several thousand sound transducers 40) may be manufactured in parallel (using the above-described process steps). Moreover, as shown inFig. 16 , thecircuitry 42 may be placed on the top-side of the wafer orchip 44. For example, thecircuitry 42 may be flip-chip-packaged to the top-side of the wafer orchip 44. Furthermore, as shown inFig. 17 , thecircuitry 42 may also be placed on the back-side of the wafer orchip 44. For example, thecircuitry 42 may be flip-chip-packaged to the back-side of the wafer orchip 44, while theelectrodes circuitry 42 throughtraces 28 and/or vias. -
Fig. 18 shows a flow-chart of the process for manufacturing thesound transducer 40. The process starts with thestep 46 of depositing thefirst metal layer 14 onto thesubstrate 10, as described in more detail in relation toFig. 1 and 2 . The process is continued with thestep 48 of applying the photo resistlayer 12 to thefirst metal layer 14, as described in more detail in relation toFig. 3 . After having applied the photo resistlayer 12 to thefirst metal layer 14, portions of the photo resistlayer 12 are exposed to electromagnetic radiation instep 50 and the photo resistlayer 12 is developed instep 52, as described in more detail in relation toFig. 4 andFig. 5 . Atstep 54, portions of thefirst metal layer 14 are removed and atstep 56, portions of thesubstrate 10 above which thefirst metal layer 14 has been removed are wet-etched, as described in more detail in relation toFig. 6 and Fig. 7 . Atstep 56, the process concludes with depositing asecond metal layer 26 onto thesubstrate 10, as described in more detail in relation toFig. 8 . - The process may then be continued as described in relation to
Fig. 9 to Fig. 14 . Hence, all aspects described in relation to the (manufacturing of the)sound transducer 40 also relate to the process, and vice versa. -
- 10
- substrate
- 12
- photo resist layer
- 14
- first metal layer/adhesion layer
- 16a
- photo resist layer (exposed portion)
- 16b
- photo resist layer (unexposed portion)
- 16c
- photo resist layer (unexposed portion)
- 18
- mask
- 20
- edge
- 22
- cavity
- 24
- sidewall
- 26
- second metal layer/first electrode
- 28
- conductive trace
- 30
- wafer
- 32
- substrate
- 34
- oxide layer
- 36
- membrane
- 38
- third metal layer/second electode
- 40
- sound transducer
- 42
- circuitry
- 44
- wafer or chip
- 46
- process step
- 48
- process step
- 50
- process step
- 52
- process step
- 54
- process step
- 56
- process step
- 58
- process step
Claims (16)
- A method of manufacturing a sound transducer (40), comprising:depositing (46) a first metal layer (14) onto a substrate (10);applying (48) a photo resist layer (12) to the first metal layer (14);exposing (50) portions of the photo resist layer (12) to electromagnetic radiation;developing (52) the photo resist layer (12);removing (54) portions of the first metal layer (14);wet etching (56) portions of the substrate (10) above which the first metal layer (14) has been removed; anddepositing (58) a second metal layer (26) onto the substrate (10).
- The method of claim 1, wherein the second metal layer (26) is deposited onto a bottom of at least one cavity (22) in the substrate (10).
- The method of claim 2, wherein the at least one cavity (22) is formed by the wet etching.
- The method of claim 2 or 3, wherein dimensions of the at least one cavity (22) are larger than dimensions of a corresponding opening in the first metal layer (14).
- The method of claim 4, wherein the edge (20) of the opening in the first metal layer (14) protrudes beyond and masks a sidewall (24) of the at least one cavity (22) when depositing the second metal layer (26) onto the substrate (10).
- The method of any one of claims 2 to 5, wherein the wet etching comprises undercutting the substrate (10).
- The method of any one of claims 2 to 6, wherein the substrate (10) comprises glass.
- The method of any one of claims 2 to 7, wherein the first metal layer (14) comprises chromium or platinum.
- The method of any one of claims 2 to 8, further comprising:
removing the first metal layer (14) and providing at least one membrane (36) above the at least one cavity (22). - The method of claim 9, wherein the at least one membrane (36) comprises silicon.
- The method of claim 9 or 10, further comprising:
depositing a third metal layer (38) onto the at least one membrane (36). - The method of claim 11, wherein the third metal layer (38) comprises chromium or platinum.
- The method of claim 11 or 12, further comprising:etching a portion of the membrane (36);wherein the third metal layer (38) serves as an etch-stop layer.
- A sound transducer (40), comprising:a first electrode (26); anda second electrode (38); whereinthe first electrode (26) is arranged on a bottom of a cavity (22), the cavity (22) being formed in a glass substrate (10);the second electrode (38) is arranged on a membrane (36), the membrane (36) being placed above and traversing the cavity (22);the first electrode (26) comprises a first metal; andthe second electrode (38) comprises a second metal.
- The sound transducer (40) of claim 14, wherein the second metal 11 is different from the first metal.
- The sound transducer (40) of claim 14 or 15, wherein
the first metal is aluminum, copper, or gold; and/or
the second metal is chromium or platinum.
Priority Applications (1)
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EP18164020.2A EP3546072B1 (en) | 2018-03-26 | 2018-03-26 | Method of manufacturing a sound transducer |
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EP18164020.2A EP3546072B1 (en) | 2018-03-26 | 2018-03-26 | Method of manufacturing a sound transducer |
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EP3546072B1 EP3546072B1 (en) | 2023-08-02 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050277064A1 (en) * | 2004-06-14 | 2005-12-15 | Bae Systems Information & Electronic Systems Integration, Inc. | Lithographic semiconductor manufacturing using a multi-layered process |
US20170232474A1 (en) * | 2015-07-30 | 2017-08-17 | North Carolina State University | Anodically bonded vacuum-sealed capacitive micromachined ultrasonic transducer (cmut) |
-
2018
- 2018-03-26 EP EP18164020.2A patent/EP3546072B1/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050277064A1 (en) * | 2004-06-14 | 2005-12-15 | Bae Systems Information & Electronic Systems Integration, Inc. | Lithographic semiconductor manufacturing using a multi-layered process |
US20170232474A1 (en) * | 2015-07-30 | 2017-08-17 | North Carolina State University | Anodically bonded vacuum-sealed capacitive micromachined ultrasonic transducer (cmut) |
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