EP3484003B1 - Agencement de circuit pour un convertisseur de puissance électrique, convertisseur de puissance électrique pour un véhicule et véhicule - Google Patents

Agencement de circuit pour un convertisseur de puissance électrique, convertisseur de puissance électrique pour un véhicule et véhicule Download PDF

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Publication number
EP3484003B1
EP3484003B1 EP17201084.5A EP17201084A EP3484003B1 EP 3484003 B1 EP3484003 B1 EP 3484003B1 EP 17201084 A EP17201084 A EP 17201084A EP 3484003 B1 EP3484003 B1 EP 3484003B1
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European Patent Office
Prior art keywords
diode
terminal
connector
circuit arrangement
voltage
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EP17201084.5A
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German (de)
English (en)
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EP3484003A1 (fr
Inventor
Mathias Baumann
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Valeo eAutomotive Germany GmbH
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Valeo eAutomotive Germany GmbH
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Priority to EP17201084.5A priority Critical patent/EP3484003B1/fr
Priority to CN201811334294.6A priority patent/CN109768698A/zh
Publication of EP3484003A1 publication Critical patent/EP3484003A1/fr
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
    • H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches

Definitions

  • the present invention relates to a circuit arrangement for electric power converters according to claims 1 and 2.
  • the invention relates to an electric power converter for a vehicle and a vehicle.
  • Circuit arrangements comprising a switching element realized by an insulated gate field-effect transistor (IGFET) are commonly used for connecting a load connected a source terminal to a DC voltage source and disconnecting the load from the DC voltage source depending on a voltage applied to a gate terminal. Therefore, the DC voltage source is connected to a first and second connector of the second arrangement. However, if the DC voltage source is connected with a wrong polarity to the connectors, the transistor may connect the load to the DC voltage source even if the voltage is zero because of a body diode of the transistor being in forward operation. This may cause a short circuit and may result in a damage of the switching element due to a negative temperature coefficient of the body diode.
  • IGFET insulated gate field-effect transistor
  • IGFET insulated gate bipolar transistor
  • US 2007/268048 , US 2015/326002 and US8810144 B2 disclose a switching element being realized by at least one insulated gate field effect transistor having a body diode, a diode connected from the second terminal to the source terminal of the switch.
  • a circuit arrangement as initially described comprising a diode connected from the second terminal to the gate terminal in a direction corresponding to a direction of the body diode from the source terminal to the drain terminal.
  • the invention is based upon the consideration to configure the circuit arrangement such that in the case of the DC voltage source being connected with a wrong polarity to the first and second connector a voltage supplied by the DC voltage source is applied to the gate terminal via the diode being in forward direction.
  • a voltage supplied by the DC voltage source is applied to the gate terminal via the diode being in forward direction.
  • the switching element realized by the IGFET is effectively protected from being damaged when the DC voltage source is connected with the wrong polarity.
  • the circuit arrangement according to the invention does not require an external power supply but works completely passively. Additionally, fuses and a voltage drop over a diode being connected in series with the switching element and the load are avoided.
  • the body diode is in forward direction from the source terminal to the drain terminal. Then the diode is connected from the second connector to the gate terminal in forward direction.
  • the pole of the DC source connected or connectable to the first connector is a positive pole and/or the inverse pole of the DC source is a negative pole.
  • the switching element may be interconnected as a high-side switch.
  • the body diode is in reverse direction from the source terminal to the drain terminal. Then the diode is connected from the second connector to the gate terminal in reverse direction.
  • the pole of the DC source connected or connectable to the first connector is a negative pole and/or the inverse pole of the DC source is a positive pole.
  • the switching element may be interconnected as a low-side switch.
  • the transistor is a metal insulator semiconductor field-effect transistor (MISFET), particularly a metal oxide semiconductor field-effect transistor (MOSFET).
  • MISFET metal oxide semiconductor field-effect transistor
  • the denomination of the terminals of the switching element corresponds to the denomination of respective transistor terminals froming the terminals of the switching element.
  • the circuit arrangement may comprise a third connector, to which the load is connected or connectable. Particularly, the third connector and the source terminal have a common potential and/or the diode and the gate terminal have a common potential and/or the first connector and the drain terminal have a common potential.
  • the diode has a significantly low forward voltage. Therefore, the diode may be Schottky diode or a germanium diode.
  • the switching element of the circuit arrangement according to the invention may be realized by at least one further insulated gate field-effect transistor, wherein the transistors are connected in parallel.
  • the transistor terminals each have a common potential with the equally denominated terminal of the switching element.
  • Using a plurality of transistors allows of the switching elements to conduct a higher current.
  • the circuit arrangement allows balanced parallel currents through the transistors.
  • the circuit arrangement according to the invention may comprise a capacitor connected between a gate-side terminal of the diode and the source terminal.
  • the capacitor is loaded when the DC voltage source is connected to the first and the second terminal with the wrong polarity and buffers the voltage supplied by the DC voltage source, advantageously.
  • the circuit arrangement may further comprise a second diode connected from the first diode and the capacitor to the gate terminal in a direction corresponding to the direction of the body diode.
  • the first diode, the second diode and the capacitor may have a common potential.
  • the second diode avoids that the capacitor is connected in parallel to a gate capacitance of the transistor when the DC voltage source is connected with the correct polarity.
  • the second diode may be Schottky diode or a germanium diode.
  • the circuit arrangement according to the invention may comprise a discharge resistor connected between the gate terminal and the source terminal.
  • the discharge resistor may have a common potential with a gate terminal and/or a common potential with the source terminal and/or a common potential with a terminal of the capacitor being not connected to the first diode.
  • a time constant being a product of the resistance of the discharge resistor and the capacitance of the capacitor is chosen such that a gate-source-voltage of the switching element is above a threshold voltage of the switching element for a predefined time span. Note that the switching element may remain conductive after this time span since its gate terminal is still controlled by the DC voltage source being connected with the wrong polarity.
  • the invention relates to an electric power converter for a vehicle, comprising the circuit arrangement according to the invention, wherein the load is a power unit of the electric power converter.
  • the electric power converter is preferably a DC/DC converter.
  • the invention relates to a vehicle, comprising an electric system, a DC voltage source and the electric power converter according to the invention configured to supply a voltage to the electric system.
  • the electric power converter and/or the vehicle may comprise the control unit being connected to the fourth connector and being configured to provide the control voltage to the gate terminal for connecting the DC voltage source to the power unit and for disconnecting the DC voltage source from the power unit.
  • Fig. 1 is a diagram of a first embodiment of a circuit arrangement 1, a DC voltage source 2 and a load 3 supplied by the DC voltage source 2.
  • solid lines emanating from the DC voltage source 2 represent a connection to the circuit arrangement 1 with a correct polarity and corresponding dashed lines represent a connection to the circuit arrangement 1 with a wrong polarity.
  • the circuit arrangement 1 comprises a first connector 4 connected to a positive pole 5 of the DC voltage source 2 in the case of the correct polarity and connected to a negative pole 6 of the DC voltage source 2 in the case of the wrong polarity.
  • the second connector 7 of the circuit arrangement 1 is connected to the negative pole 6 in the case of the right polarity and connected to the positive pole 6 in the case of the wrong polarity.
  • a third connector 8 is provided for connecting the load 3 to the circuit arrangement 1.
  • the circuit arrangement 1 comprises a switching element 9 having a drain terminal 10 connected to the first connector 4, a source terminal 11 connected to the load 3 via the third connector 8 and a gate terminal 12.
  • the switching element 9 is realized by an n-channel insulated gate field-effect transistor 13 (IGFET) having a body diode 14 being in forward direction from the source terminal 11 to the drain terminal 10. Consequently, the switching element 9 works as a high-side switch with respect to the right polarity of the DC voltage source 2.
  • IGFET n-channel insulated gate field-effect transistor 13
  • the second arrangement 1 comprises a diode 15 formed by a Schottky diode or a germanium diode connected in forward direction from the second terminal 7 to the gate terminal 12.
  • the direction of the diode 15 from the second terminal 7 to the gate terminal 12 corresponds to the direction of the body diode 14 from the source terminal 11 to the drain terminal 10.
  • a high-ohmic discharging resistor 16 is connected between the gate terminal 12 and the source terminal 11, allowing a faster discharge of a gate capacitance.
  • a fourth connector 17 connected to the gate terminal 12, a cathode 19 of the diode 15 and the discharging resistor 16 is provided for controlling the switching state of the switching element 9 by applying a positive voltage to the gate terminal 12.
  • an anode 20 of the diode 15 is connected to the negative pole 6 of the DC voltage source 2 via the second connector 7.
  • the diode 15 is thus operated in a reverse operation mode and blocking.
  • the switching element 9 may be switched between a blocking switching state in a cut-off operation region of the transistor 13 and a conducting switching state in a linear or a saturated operation region of the transistor 13. In the conducting switching state current supplied by the DC voltage source to flows through the load 3, whereas in the blocking switching state substantially no current flows through the load 3.
  • the DC voltage source 2 is connected with the wrong polarity to the first connector 4 on the one hand and to the second connector 7 and the load 3 on the other hand. This might e.g. happen due to mounting failures or an accidental misconnection by a human being.
  • the anode 20 is connected to the positive pole 5 of the DC voltage source 2 via the second connector 7.
  • the diode 15 is operated in a forward operation mode, wherein a positive voltage from the positive pole 5 is applied to the gate terminal 12.
  • the body diode 14 is connected to the DC voltage source 2 in forward direction, the voltage applied to the gate terminal 12 causes the transistor 13 to be operated in an inverse operation region.
  • the current from the third terminal 8 to the first terminal 4 is conducted by the body diode 14.
  • the positive voltage of the DC voltage source 2 supplied to the gate terminal 12 via the conducting diode 15 allows the current 2 flow through the channel of the transistor 13.
  • a damage of the transistor 13 is avoided, which would be caused by a negative temperature coefficient of the body diode 14 if the diode 15 was omitted.
  • Fig. 2 is a diagram of progresses of a negative voltage 21 supplied by the DC voltage source 2 and a gate-source-voltage 22 over time t in the case of the DC voltage source 2 being connected with the wrong polarity.
  • the voltage 21 rises and has a negative value of e.g. 9.2 V in a stationary state.
  • the gate-source-voltage 22 rises and has a voltage of e.g. 2.5 V in a stationary state, wherein this voltage is sufficient to avoid substantially the current flow through the body diode 14.
  • Fig. 3 is a diagram of the second embodiment of a circuit arrangement 1 corresponding to the first embodiment, wherein a capacitor 24 connected between a gate-side terminal of the first diode 15 and the source terminal 11 and a second diode 25 connected from the first diode 15 to the gate terminal 12 are provided additionally.
  • the capacitor 24 has a first terminal 26, which has a common potential with the cathode 19 being the gate-side terminal of the first diode 15 and with an anode 27 of the second diode 25.
  • a second terminal 28 of the capacitor 24 has a common potential with the source terminal 11 and with a first terminal 29 of the discharging resistor 16.
  • a cathode 30 of the second diode 25 has a common potential with the gate terminal 12, a second terminal 31 of the discharging resistor 16 and the fourth connector 17.
  • the capacitor 24 buffers the voltage of the DC voltage source 2 when being connected with the wrong polarity, wherein the second diode 25 avoids that the transistor 24 is connected in parallel to the gate capacity of the transistor 13 in the case of the DC voltage source 2 being connected with the correct polarity.
  • Fig. 4 is a diagram of progresses of a negative voltage 21 supplied by the DC voltage source 2 and a gate-source-voltage 22 over time t in the case of the DC voltage source 2 being connected with the wrong polarity.
  • the voltage 21 rises and has a negative value of e.g. 9.2 V in a stationary state.
  • the gate-source-voltage 22 rises to a higher level of e.g. 6.8 V and falls to a constant level of e.g. 2.5 V at a time 32 because of the capacitor 24 being loaded.
  • the resistance of the discharging resistor 16 and the capacity of the capacitor 24 to a time constant being the product from the resistance and the capacity it is achieved that the gate-source-voltage is surely above a threshold voltage of the transistor 13 for a predefined, critical time span.
  • the capacity is 30 ⁇ F and the resistance is 47.5 k ⁇ , resulting in a time coefficient of 1.425 s.
  • Fig. 5 is a diagram of a switching element 9 of a third embodiment of a circuit arrangement corresponding to the above-mentioned ones, wherein the switching element 9 is realized by a plurality of transistors 13 connected in parallel.
  • the drain terminals of the transistors 13 have a common potential with the drain terminal 10 of the switching element 9
  • the source terminals of the transistors 13 have a common potential with the source terminal 11 of the switching element 9
  • the gate terminals of the transistors 13 have a common potential with the gate terminal 12 of the switching element 9.
  • six, eight or more transistors 13 are connected in parallel.
  • Fig. 6 is a diagram of a fourth embodiment of a circuit arrangement 1 corresponding to the second embodiment depicted in fig. 3 , wherein the switching element 9 is realized by a p-channel insulated gate field-effect transistor 13.
  • the switching element 9 works as a low-side switch.
  • the DC voltage source 2 is connected with the correct polarity when the positive pole 5 is connected to the second connector 7 and the negative pole 6 is connected to the first connector 4 and vice versa in the case of the wrong polarity.
  • the body diode 14 of the transistor 13 is in opposite direction to the body diode of an n-channel transistor, the cathode 19 of the first diode 15 is connected to the second connector 7 and the cathode 30 of the second diode 25 is connected to the anode 20 of the first diode 15.
  • the anode 20, the cathode 30 and the first terminal of the capacitor 24 have a common potential and the gate terminal 12, the anode 27, the second terminal 31 of the discharging resistor 16 and the fourth connector 17 have a common potential.
  • the capacitor 24 and the second diode 25 are omitted, so that this embodiment is similar to the first embodiment depicted in Fig. 1 , wherein the switching element 9 works as a low-side switch realized by the p-channel transistor 13.
  • the switching element 9 is realized by a plurality of p-channel transistors 13 similar to Fig. 5 .
  • Fig. 7 is a block diagram of an electric power converter 33 and a DC voltage source 2.
  • the electric power converter 33 comprises a circuit arrangement 1 corresponding to one of the afore-mentioned embodiments, a load 3 and a control unit 34.
  • the load 3 is a power unit that allows the electric power converter 33 to be operated as a DC/DC-converter.
  • the load 3 is connected to the third connector 8 and the control unit 34 is connected to the fourth connector 17 of the circuit arrangement 1.
  • the control unit 34 allows to control the switching element 9 to connect the load 3 to or disconnect the load 3 from the DC voltage source 2.
  • the DC voltage source 2 has its right polarity when the positive pole 5 is connected to the first connector 4 and the negative pole 6 is connected to second connector 7.
  • the DC voltage source 2 has its correct polarity when the positive pole 5 is connected to the second connector 7 and the negative pole 6 is connected to the first connector 4.
  • Fig. 8 is a block diagram of a vehicle 35 comprising an electric system 36, a DC voltage source 2 and an electric power converter 33 corresponding to the afore-mentioned embodiment configured to supply a voltage to the electric system 36.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Electronic Switches (AREA)

Claims (14)

  1. Agencement de circuit (1) pour un convertisseur de puissance électrique (33), comprenant :
    - un premier connecteur (4) pouvant être connecté à un pôle (5, 6) d'une source de tension continue (2),
    - un second connecteur (7) pouvant être connecté à un pôle inverse (5, 6) de la source de tension continue (2),
    - un élément de commutation (9) comportant
    (i) une borne de drain (10) connectée au premier connecteur (4),
    (ii) une borne de source (11) pouvant être connectée à une charge (3) et
    (iii) une borne de grille (12)
    et qui est constitué par au moins un transistor à effet de champ à grille isolée (13) comportant une diode de corps (14) se trouvant dans le sens direct, de la borne de source (11) à la borne de drain (10) et
    - une diode (15) connectée du second connecteur (7) à la borne de grille (12) en sens direct,
    caractérisé par
    un autre connecteur (17) connecté à la borne de grille (12) et configuré pour obtenir une tension de commande afin de commuter l'élément de commutation (9) lorsqu'il fonctionne dans un mode direct.
  2. Agencement de circuit (1) pour un convertisseur de puissance électrique (33), comprenant :
    - un premier connecteur (4) pouvant être connecté à un pôle (5, 6) d'une source de tension continue (2),
    - un second connecteur (7) pouvant être connecté à un pôle inverse (5, 6) de la source de tension continue (2),
    - un élément de commutation (9) comportant
    (i) une borne de drain (10) connectée au premier connecteur (4),
    (ii) une borne de source (11) pouvant être connectée à une charge (3) et
    (iii) une borne de grille (12)
    et qui est constituée par au moins un transistor à effet de champ à grille isolée (13) comportant une diode de corps (14) et
    - une diode (15),
    caractérisé en ce que
    la diode de corps (14) est en sens inverse, de la borne de source (11) à la borne de drain (10), et la diode (15) est connectée du second connecteur (7) à la borne de grille (12) en sens inverse, dans lequel l'agencement de circuit (1) comprend en outre un autre connecteur (17) connecté à la borne de grille (12) et configuré pour obtenir une tension de commande afin de commuter l'élément de commutation (9) lorsqu'il fonctionne dans un mode direct.
  3. Agencement de circuit selon la revendication 1 ou 2, caractérisé en ce que la diode (15) est une diode Schottky ou une diode au germanium.
  4. Agencement de circuit selon l'une quelconque des revendications précédentes, caractérisé en ce que l'élément de commutation (9) est constitué par au moins un autre transistor à effet de champ à grille isolée (13), dans lequel les transistors (13) sont connectés en parallèle.
  5. Agencement de circuit selon l'une quelconque des revendications précédentes, caractérisé en ce qu'il comprend un condensateur (24) connecté entre une borne côté grille de la diode (15) et la borne de source (11).
  6. Agencement de circuit selon la revendication 5, lorsqu'elle dépend de la revendication 1, caractérisé en ce qu'il comprend une seconde diode (25) connectée de la première diode (15) à la borne de grille (12) en sens direct.
  7. Agencement de circuit selon la revendication 5, lorsqu'elle dépend de la revendication 2, caractérisé en ce qu'il comprend une seconde diode (25) connectée de la première diode (15) à la borne de grille (12) en sens inverse.
  8. Agencement de circuit selon l'une quelconque des revendications précédentes, caractérisé en ce qu'il comprend une résistance de décharge (16) connectée entre la borne de grille (12) et la borne de source (11).
  9. Agencement de circuit selon la revendication 8, lorsqu'elle dépend de la revendication 5, caractérisé en ce que l'on choisit une constante de temps qui est un produit de la valeur de la résistance de décharge (16) par la capacité du condensateur (24) de telle sorte qu'une tension grille-source de l'élément de commutation (9) soit supérieure à une tension de seuil de l'élément de commutation (9) pendant un intervalle de temps prédéfini.
  10. Convertisseur de puissance électrique (33) pour un véhicule (35), comprenant un agencement de circuit (1) selon l'une quelconque des revendications 1 à 9, dans lequel la charge (3) est une unité d'alimentation du convertisseur de puissance électrique (33).
  11. Convertisseur de puissance électrique selon la revendication 10, caractérisé en ce qu'il s'agit d'un convertisseur continu/continu.
  12. Convertisseur de puissance électrique selon la revendication 10 ou 11, comprenant en outre une unité de commande (34) qui est connectée à l'autre connecteur (17) et qui est configurée pour fournir la tension de commande à la borne de grille (12) afin de connecter la source de tension continue (2) à l'unité d'alimentation et de déconnecter la source de tension continue (2) de l'unité de d'alimentation.
  13. Véhicule (35), comprenant un système électrique (36), une source de tension continue (2) et un convertisseur de puissance électrique (33) selon l'une quelconque des revendications 10 à 12 configuré pour fournir une tension au système électrique (36).
  14. Véhicule selon la revendication 13, comprenant en outre une unité de commande connectée à l'autre connecteur (17) et configurée pour fournir la tension de commande à la borne de grille (12) afin de connecter la source de tension continue (2) à l'unité d'alimentation et de déconnecter la source de tension continue (2) de l'unité d'alimentation.
EP17201084.5A 2017-11-10 2017-11-10 Agencement de circuit pour un convertisseur de puissance électrique, convertisseur de puissance électrique pour un véhicule et véhicule Active EP3484003B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP17201084.5A EP3484003B1 (fr) 2017-11-10 2017-11-10 Agencement de circuit pour un convertisseur de puissance électrique, convertisseur de puissance électrique pour un véhicule et véhicule
CN201811334294.6A CN109768698A (zh) 2017-11-10 2018-11-09 电力变换器的电路、车辆用电力变换器和车辆

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP17201084.5A EP3484003B1 (fr) 2017-11-10 2017-11-10 Agencement de circuit pour un convertisseur de puissance électrique, convertisseur de puissance électrique pour un véhicule et véhicule

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EP3484003A1 EP3484003A1 (fr) 2019-05-15
EP3484003B1 true EP3484003B1 (fr) 2022-11-30

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CN113422361B (zh) * 2021-06-09 2024-06-11 宁波普瑞均胜汽车电子有限公司 一种车用输入防反接电路

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US8810144B2 (en) * 2012-05-02 2014-08-19 Cree, Inc. Driver circuits for dimmable solid state lighting apparatus

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JP4003833B2 (ja) * 2003-10-06 2007-11-07 オリジン電気株式会社 電界制御型半導体素子の駆動回路
US7139157B2 (en) * 2004-07-30 2006-11-21 Kyocera Wireless Corp. System and method for protecting a load from a voltage source
JP4305875B2 (ja) * 2006-05-22 2009-07-29 富士通テン株式会社 電源制御回路及び電源制御回路を備えた電子制御装置
EP2490316B1 (fr) * 2011-02-18 2013-10-30 Rohm Co., Ltd. Procédé et circuit pour le contrôle d'une tension de source de grille d'un MOSFET de protection contre la polarité inverse
KR101147257B1 (ko) * 2012-01-16 2012-05-18 주식회사 빅솔론 포지티브 직류 전원단 돌입전류 저감회로
DE102012222895A1 (de) * 2012-12-12 2014-06-12 Robert Bosch Gmbh Schutzschaltung
JP2017017917A (ja) * 2015-07-03 2017-01-19 ローム株式会社 スイッチ回路、インバータおよび電源回路

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Publication number Priority date Publication date Assignee Title
US8810144B2 (en) * 2012-05-02 2014-08-19 Cree, Inc. Driver circuits for dimmable solid state lighting apparatus

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EP3484003A1 (fr) 2019-05-15

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