EP3449688B1 - Assembly for switching a resistor - Google Patents
Assembly for switching a resistor Download PDFInfo
- Publication number
- EP3449688B1 EP3449688B1 EP17722409.4A EP17722409A EP3449688B1 EP 3449688 B1 EP3449688 B1 EP 3449688B1 EP 17722409 A EP17722409 A EP 17722409A EP 3449688 B1 EP3449688 B1 EP 3449688B1
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- EP
- European Patent Office
- Prior art keywords
- resistor
- switching device
- switching
- switch
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0236—Industrial applications for vehicles
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0202—Switches
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/035—Electrical circuits used in resistive heating apparatus
Definitions
- the invention relates to an arrangement comprising a heat-emitting first resistor, a control device for switching the first resistor and a (in particular grounded) component which is at a potential without direct reference to a control voltage, in particular a housing and / or chassis component, wherein the first resistor is arranged in spatial proximity to the component, in particular housing or chassis component, according to claim 1 and a corresponding control method according to claim 10.
- DE 20 2012 013 008 U1 describes an electrically operable heating device which can be connected to a first pole via a first switching device and can be connected to a second pole via a second switching device.
- US 2001/0045733 A1 discloses an oscillating or pulsed signal that is supplied to a seat heater.
- Fig. 1 illustrates the prior art and shows a resistor which is located in the vicinity of a housing and is symbolically represented by the resistors R1 to R4. The resistor is cooled to dissipate heat from the housing.
- the capacitors C1 to C5 correspond to a symbolic representation of a capacitance that is assigned to the resistor and is created by the spatially close connection of the resistor to the housing.
- the transistor M switches the resistor (R1 to R4) on or off.
- the entire resistor (R1 to R4) is at the supply voltage. If transistor M is now switched on, the voltage across the resistor (R1 to R4) changes.
- a (in Fig. 1 ) lower end of R4 goes towards 0 V, while an (in Fig. 1 ) the upper end of R1 is still on the supply voltage.
- the mean voltage i.e. one between one (in Fig. 1 ) lower end of R2 and one (in Fig. 1 ) upper end of R3 of the complete resistor (R1 to R4) corresponds to half the supply voltage.
- the capacity (C1 to C5) in this schematic example is completely or at least partially discharged.
- C1 is discharged "completely", for example, while C3 is discharged to half the supply voltage.
- the charging and discharging of the capacitors described can lead to significant electromagnetic interference (both wired and radiated interference).
- Shielding is not possible in all cases or can often only be integrated with significant additional costs. Shielding also ensures that any heat connection deteriorates, since both a shielding layer and at least one additional insulation layer are required.
- filter components can be comparatively expensive, heavy and voluminous.
- a slowdown of the clocking is often undesirable because the clocking is adapted accordingly to other requirements.
- the object is achieved by an arrangement comprising a heat-emitting first resistor, a control device for switching the first resistor and a (in particular grounded) component which is preferably at a potential without (direct) reference to a control voltage, in particular a housing and / or chassis component, wherein the first resistor is arranged in spatial proximity to the component, in particular the housing or chassis component, and has a first and a second connection, the first resistor and the component forming a capacitance, the control device comprising a first switching device and a second switching device, wherein the first switching device, first resistor and second switching device are connected in series in the order mentioned and thus form a series connection.
- a compensation device is provided and configured so that in the on state of the first resistor a voltage is present between the first and the second connection, so that the first connection is at a first potential and the second connection is at a second potential, the first resistor in the off state at an intermediate potential that lies between the first and the second potential, is held, in particular is kept at, at least approximately, half the supply voltage.
- the first resistor is generally a resistor that couples to an external potential.
- the control device is configured to control the first resistor in a pulse-width-modulated manner, the first and second switching devices being switched synchronously.
- a key idea of the first aspect of the invention is that the (first) resistance in the off state is kept at an intermediate potential which lies between the first and the second potential.
- a voltage corresponding to the intermediate potential can, for example, correspond to 30 to 70, preferably 45 to 55, still more preferably 48 to 52, still more preferably (at least approximately) 50% of the voltage which is in the on state at the first connection of the (first) resistor is present (which is usually the "supply voltage").
- the compensation device according to the invention compensates for currents that are generated by capacitances between the (first) resistor and the housing, at least partially (ideally completely).
- a core idea of the second aspect of the invention is that the resistance is controlled in a pulse-modulated manner, but not via only one switching device, but synchronously (simultaneously) via the two switching devices.
- the compensation device (with the resistances described below and the connecting line described below) may be omitted (or is only optional). This compensation device essentially only plays a role when the switching devices are started up or switched on for the first time and can then in particular reduce an EMC interference.
- a PWM control or subsequent switching operations during operation e.g.
- the compensation device no longer plays a role (or - if provided - at best a minor one), since this is achieved by an (almost) synchronous one Switching the two switching devices (instead of just one switching device) can effectively achieve the same or at least a similar effect.
- the full voltage swing during PWM switching is not present in the current PWM operation, but rather a smaller voltage swing (in particular at least approximately half).
- the above compensation device therefore has the particular advantage that when switching on (ramping up) for the first time or when finally switching off (ramping down) the resistor (heating resistor), a one-time pulse is compensated for or at least minimized at this time.
- a compensation device (with the resistors described below and the connecting line) is not absolutely necessary for compensating for faults during operation (that is, during a PWM control).
- the control device is configured such that the two switching devices can be switched synchronously (in particular simultaneously).
- switching on the resistor is to be understood in particular as starting up for the first time (after a longer pause, for example at least 10 seconds or at least one minute).
- On and off is accordingly to be understood in particular as a final (at least for a period of at least 10 seconds or at least one minute) shutdown of the resistor (or disconnection of the resistor from the power source).
- the resistor (especially the heating resistor) is still in the on state.
- the first or second switching device can be switched off (that is to say block a current) when the resistor is in an on state.
- a switch-on period that is, a period in which the switching device does not block current
- a switch-off period that is, a period in which the switching device blocks the current
- a final switch-off should mean an interruption in the operation of the resistor (heating resistor) for at least 10 seconds, preferably at least one minute.
- a "spatial proximity" between the (first) resistor and the component (eg housing) is to be understood in particular as a (minimum) distance of less than 1 cm, in particular less than 0.5 cm, between the resistor and the component.
- the “minimum distance” is the smallest distance if a distance between the resistor and the component (spatial, ie along an extension of an intermediate space) is not constant.
- Resistor and component should, however, be spaced apart from one another to the extent that no short circuit is formed between the resistor and the housing.
- the (first) resistor is preferably the resistance of an electrical heating device, in particular an electrical layer heating device. Electrical Layer heating devices comprise a heating resistor which extends flat and heats up when an electrical current is passed through.
- the resistor is a resistor which is arranged for heat dissipation in close proximity to a (in particular grounded) component, which is preferably at a potential without direct reference to a control voltage, in particular to a housing and / or a chassis component .
- the resistor can generally be a heating resistor, that is to say the component that is used to generate heat for heating in a heating device or another resistor that may have to be cooled.
- the control device comprises a (high-resistance) second resistor, a (high-resistance) third resistor and a connecting line, the second and third resistor being connected in series with one another and connected in parallel with the series connection comprising the first switching device, the first resistor and the second switching device , wherein the connecting line connects a point between the second and the third resistor with a point between the two switching devices.
- the desired intermediate potential in particular center voltage
- a high-resistance resistor is a resistor whose resistance value is significantly (e.g. at least twice or at least five times) higher than the resistance value of the first resistor.
- the resistance value of a (high-resistance) resistor can be at least 1 k ⁇ , preferably at least 1 M ⁇ .
- the compensation device can have an active circuit, which has the effect that a corresponding voltage (in particular center voltage) can be set on the first resistor.
- a resistance value of the second resistor and a resistance value of the third resistor differ by at most 10%.
- the resistance values of second and third resistor are further preferred (at least essentially) the same size.
- the difference (of at most 10%) should be calculated in such a way that first a difference of the resistance values is formed and this difference is divided by the smaller resistance value (and then multiplied by 100 to arrive at a percentage).
- the resistances are essentially (or at least essentially) the same size, disturbances, as described above, can be significantly reduced or, in the ideal case, even completely avoided.
- the above-mentioned connecting line can, for example, be connected (approximately) in a center of the first resistor. However, (deviating from this) it is also conceivable to connect the connecting line at another point (between the first and second switching device), for example at (or in the vicinity) of the first switching device or the second switching device or also at several points.
- the first and / or second switching device are preferably designed as a transistor, in particular MOSFET or IGBT, or comprise such a transistor (MOSFET or IGBT), preferably based on silicon or silicon carbide or gallium arsenide. This provides a structure that can be switched quickly and reliably.
- the arrangement according to the first aspect preferably comprises a control device that is configured to switch first and second switching devices synchronously (simultaneously).
- the (preferably synchronous) circuit can also be provided by another component that is not necessarily part of the arrangement.
- the arrangement according to the first aspect is principally characterized in that (in electrical terms) a structure is provided which (with preferably synchronous switching) enables corresponding compensation in a simple manner.
- a support device in particular comprising one or more capacitances, for example parallel to the second and / or third resistor, is preferred for supporting a voltage corresponding to the intermediate potential (especially center voltage) is provided. If the first and second switching devices cannot be switched on "100%" synchronously, depending on the switching time and time difference, this leads to a differently high current that flows away via an earth connection.
- the support device in particular capacitors
- capacitors can now support the desired voltage (center voltage) in order to mitigate the effect of the time shift.
- capacitors are connected in parallel to the second and third (high-resistance) resistor.
- a microcontroller and / or FPGA can also be provided.
- An FPGA Field Programmable Gate Array
- Microcontrollers or FPGAs are provided for controlling the switching of the first and / or second switching device, in particular for resharpening a switching time of the first and second switching device. Difficulties with regard to a "timing" (switching time) of the two switching devices (in particular transistors or MOSFETs or IGBTs, preferably based on silicon or silicon carbide or gallium arsenide) can also be significantly alleviated by sharpening this "timing" to achieve the highest possible level of synchronicity. This enables effective compensation.
- the arrangement can furthermore comprise a current source, in particular a direct current source.
- a current source in particular a direct current source.
- a current source can also be provided externally, so that the arrangement only has corresponding connections for connecting a current source.
- a time interval between a switch-on time of the first switching device and a switch-on time of the second switching device is preferably less than 20%, preferably less than 5%, of a switch-on time period of the first switching device.
- a time interval between a switch-off time of the first switching device and a switch-off time of the second switching device is less than 20%, preferably less than 5%, of a switch-on time of the first switching device.
- a clock rate (frequency) of the PWM control is preferably in a range from 1 kHz to 30 kHz, more preferably from 8 kHz to 25 kHz.
- a pulse width (duty cycle) of the PWM control is preferably in the range from 1% to 100% of a cycle.
- the above-mentioned object is further achieved by a control method, in particular using the above arrangement, for switching a component in spatial proximity to an (in particular grounded) component which is preferably at a potential without (direct) reference to an actuation voltage, in particular an Housing and / or chassis component, arranged heat-emitting, first resistor with a first and a second connection, the first resistor and the component forming a capacitance.
- the first connection is in an on state of the first resistor at a first potential and the second connection is in an on state at a second potential, the resistor in an off state at an intermediate potential, that lies between the first and the second potential is held, in particular is held at, at least approximately, half the supply voltage.
- the (first) resistor (in particular heating resistor) is controlled in a pulse-width-modulated manner, a first switching device assigned to the first connection and a second switching device assigned to the second connection being switched synchronously.
- a first switching device assigned to the first connection and a second switching device assigned to the second connection are preferably switched synchronously (in particular simultaneously), at least when they are switched on for the first time and finally switched off.
- a time interval between a switch-on time of the first switching device and a switch-on time of the second switching device is preferably less than 20%, preferably less than 5%, of a switch-on time period of the first switching device.
- an electrical heating device in particular a layer heating device, comprising an arrangement of the type described above and / or designed to carry out the control method described above.
- the electrical heating device can also comprise a (clocked) wire heater or a PCT element as the heating element.
- the stratified electric heater may include a stratified heater that forms an electrical resistance and is heated by flowing a current through the stratified heater so that heat can be given off for heating.
- the heating layer can be applied, for example, in a plasma coating process, in particular plasma spraying, or in a screen printing process or as a resistance paste, in particular on the insulating layer.
- a plasma coating process for example, an electrically conductive layer can first be applied, in particular to the insulating layer. Areas can then be cut out of the electrically conductive layer, so that one or more conductor tracks remain.
- masking technology is preferably used. The conductor tracks can then form the heating resistor or several heating resistors.
- the areas mentioned can be cut out of the conductive layer, for example by means of a laser.
- the heating coating can, for example, be a metal layer and possibly contain nickel and / or chromium or consist of these materials.
- nickel and / or chromium for example, 70-90% nickel and 10-30% chromium can be used, with a ratio of 80% nickel and 20% chromium being considered well suited.
- the heating coating can, for example, have an area of at least 5 cm 2 , preferably at least 10 cm 2 and / or at most 200 cm 2 , preferably at most 100 cm 2 .
- the heating coating preferably has a height (thickness) of at least 5 ⁇ m, preferably at least 10 ⁇ m and / or at most 1 mm, preferably at most 500 ⁇ m, even more preferably at most 30 ⁇ m, even more preferably at most 20 ⁇ m.
- a conductor track defined by the heating coating can be at least 1 mm, preferably at least 3 mm, even more preferably at least 5 mm, even more preferably at least 10 mm, even more preferably at least 30 mm wide. “Width” is to be understood as the extent of the conductor track perpendicular to its longitudinal extension (which usually also defines the direction of the current flow).
- the arrangement according to the invention can be designed for operation in the low-voltage range, preferably for 12 volts, 24 volts or 48 volts.
- Low-voltage range should preferably be understood to mean an operating voltage of less than 100 volts, in particular less than 60 volts (direct current).
- the arrangement according to the invention (and in particular a heating coating which may be provided) is preferably for operation in the high-voltage range, preferably for over 100 V volts or over 250 V or over 500 V, e.g. in a range of 250-800 V. In a higher volt range, the effects to be avoided which are explained above are particularly pronounced in the prior art.
- the arrangement and in particular any heating coating that may be provided is designed for operation with direct current.
- the stratified heating or heating coating can basically be as in WO 2013/186106 A1 and or WO 2013/030048 A1 described, be trained. There, heaters are described which have an electrical heating layer which heats up when an electrical voltage is applied (or a current flows).
- the resistors already mentioned can in principle be made of any electrically conductive material, but are preferably made of metal.
- the arrangement according to the invention and / or the method according to the invention and in particular the electrical heating device are preferably provided for and / or configured accordingly for use in a vehicle, in particular a motor vehicle.
- Fig. 1 shows a schematic view of an arrangement with an electrical resistance to be switched according to the prior art.
- the one to be switched Electrical resistance is symbolically represented here by the resistors R1 to R4. Basically, however, this is only a (continuous) resistance.
- the schematically represented resistors R1 to R4 can also be understood as resistor sections of the resistor (that is to say individual sections of the resistor connected in series). Alternatively, however, these can actually be resistors structurally delimited from one another (for example four).
- the resistor R1 to R4 is arranged close to a housing 10 for heat dissipation (cooling).
- Capacitors C1 to C5 shown correspond to a symbolic representation of a capacitance of the resistor, which results from the close arrangement on the housing.
- these capacitances can then be assigned to individual sections.
- a switch M (specifically a transistor, in particular a MOSFET or IGBT) is provided which can be switched on and off. If the switch M is turned off, the resistor R1 to R4 is at the supply voltage, which is provided by a voltage supply 11. If switch M is now switched on (for the first time), the voltage across resistor R1 to R4 changes. This in Fig. 1 ) lower end of R1 goes towards 0 volts, while the (in Fig. 1 ) upper end of R1 is still on supply voltage. The consequence of this is that the capacity is discharged in whole or in part, according to the schematic representation C1 to C5. The capacitance C1 is discharged completely, for example, while C3 is discharged to half the supply voltage. Half the supply voltage corresponds to the mean voltage of the complete resistor.
- Reference number 12 denotes an intermediate circuit capacitor. Additional capacitors 13 and inductors 14 are components of a network simulation (English: Line Impedance Stabilization Network, LISN) and are of no further importance for the present invention. Reference number 15 symbolizes an earth connection of the housing 10.
- FIG. 2 an arrangement is analog Fig. 1 shown, but with differences according to the invention.
- the elements / units with the reference numerals 10 to 15 correspond to the arrangement according to the prior art Fig. 1 , so that in this regard reference is made to the statements relating to the prior art.
- Fig. 2 In contrast to the prior art, the arrangement according to Fig. 2 but not just a switch M (cf. Fig. 1 ), but two switches M1, M2 (which are designed as transistors, preferably MOSFETs or IGBTs).
- two (high-resistance) resistors 16, 17 are provided, which are connected via a connecting line 18 to the first resistor R1 to R4.
- first switching devices M1, first resistor R1 to R4 and second switching device M2 are connected in series.
- second (high-resistance) resistor 16 and third (high-resistance) resistor 17 are connected.
- the connecting line 18 is connected on the one hand between the (high-resistance) resistors 16, 17 and on the other hand connected to the resistor R1 to R4.
- the connecting line can be connected between a second resistance section R2 and a third resistance section R3 (in the section-by-section view).
- the connecting line could also, for example (in Fig. 2 ) be arranged above R1 or below R3 etc.
- I1 and I2 symbolize currents that flow when switches M1 and M2 are switched on.
- the two (high-resistance) resistors 16, 17 have the same value in the present exemplary embodiment (but can also vary, at least slightly, if necessary).
- the switches M1, M2 are switched synchronously (simultaneously).
- capacitors can also support the center voltage, which is applied to the resistor R1 to R4 when the switching devices M1 and M2 are switched off, in order to mitigate the effect of the time shift. These capacitors can, for example, be arranged in parallel with the two (high-resistance) resistors 16, 17.
- the switching devices M1, M2 are controlled by a control device 19 (not shown in detail).
- the (high-resistance) resistors 16, 17 and the connecting line 18 are elements of a compensation device 20 which (as described above) ensures that when the switching devices M1, M2 are (finally) switched off, a center voltage is present at the resistor R1 to R4.
- a (fast) control unit such as a microcontroller or FPGA, can also re-sharpen the switching time (timing) of the two switching devices (MOSFETs) M1 and M2 in order to achieve a comparatively high degree of synchronicity.
- Fig. 4 shows an alternative embodiment of the invention. This corresponds to the embodiment according to Fig. 2 and 3 with the difference that the compensation device (with the resistors 16, 17 and the connecting line 18) is not provided.
- the resistor R1-R4 is PWM-driven.
- the switching devices are not only switched synchronously when switching on and switching off for the first time, but also during the operation of resistor R1-R4 (that is, during the on-state of the resistor). This can compensate for, or at least reduce, disturbances during PWM control of the resistor (in particular the heating resistor) during operation.
Description
Die Erfindung betrifft eine Anordnung, umfassend einen wärmeabgebenden ersten Widerstand, eine Steuerungsvorrichtung zum Schalten des ersten Widerstandes sowie ein (insbesondere geerdetes) Bauteil, das auf einem Potential ohne direkten Bezug zu einer Ansteuerspannung liegt, insbesondere ein Gehäuse und/oder Chassisbauteil,
wobei der erste Widerstand in räumlicher Nähe zu dem Bauteil, insbesondere Gehäuse oder Chassisbauteil, angeordnet ist, nach Anspruch 1 sowie ein entsprechendes Steuerungsverfahren nach Anspruch 10.The invention relates to an arrangement comprising a heat-emitting first resistor, a control device for switching the first resistor and a (in particular grounded) component which is at a potential without direct reference to a control voltage, in particular a housing and / or chassis component,
wherein the first resistor is arranged in spatial proximity to the component, in particular housing or chassis component, according to claim 1 and a corresponding control method according to
Die Kondensatoren C1 bis C5 entsprechen einer symbolischen Darstellung einer Kapazität, die dem Widerstand zugeordnet ist und durch die räumlich nahe Anbindung des Widerstandes an dem Gehäuse entsteht.The capacitors C1 to C5 correspond to a symbolic representation of a capacitance that is assigned to the resistor and is created by the spatially close connection of the resistor to the housing.
Der Transistor M schaltet den Widerstand (R1 bis R4) ein bzw. aus. Wenn der Transistor M ausgeschaltet wird, liegt der komplette Widerstand (R1 bis R4) auf Versorgungsspannung. Wird der Transistor M nun eingeschaltet, verändert sich die Spannung über dem Widerstand (R1 bis R4). Ein (in
Dies hat zur Folge, dass die Kapazität (C1 bis C5) in diesem schematischen Beispiel ganz oder zumindest teilweise entladen wird. C1 wird beispielsweise "vollständig" entladen, während C3 auf die halbe Versorgungsspannung entladen wird. Im Mittel hat dies zur Folge, dass die gesamte Kapazität um die halbe Versorgungsspannung entladen wird.The consequence of this is that the capacity (C1 to C5) in this schematic example is completely or at least partially discharged. C1 is discharged "completely", for example, while C3 is discharged to half the supply voltage. On average, this means that the entire capacity is discharged by half the supply voltage.
Wenn der Transistor M ausgeschaltet wird, wiederholt sich dieses Phänomen im Prinzip. Die Kapazitäten werden dabei nicht entladen, sondern (bis zur Versorgungsspannung) geladen.In principle, when transistor M is turned off, this phenomenon repeats. The capacities are not discharged, but charged (up to the supply voltage).
Das beschriebene Laden und Entladen der Kondensatoren kann je nach Geschwindigkeit zu deutlichen elektromagnetischen Störungen führen (sowohl zu leitungsgebundenen als auch zu abgestrahlten Störungen).Depending on the speed, the charging and discharging of the capacitors described can lead to significant electromagnetic interference (both wired and radiated interference).
Insbesondere wenn der Widerstand (R1 bis R4) schnell geschaltet wird (und eine verteilte Kapazität zur Erde hat), können Störungen auf einem Gehäuse und/oder einem Kabelschirm und/oder Erdungsleitungen auftreten. Übliche Gegenmaßnahmen sind:
- Eine Schirmung, damit der Widerstand nicht mehr gegen Erdpotential koppelt,
- Filterkomponenten (Common Mode Drossel, Y-Kondensatoren),
- Verlangsamung der Taktung (Schaltfrequenz, Schaltzeit).
- A shield so that the resistance no longer couples to earth potential,
- Filter components (common mode choke, Y capacitors),
- Slowdown of the clocking (switching frequency, switching time).
Eine Schirmung ist jedoch nicht in allen Fällen möglich oder oft nur mit deutlichen zusätzlichen Kosten integrierbar. Eine Schirmung sorgt zudem dafür, dass sich eine eventuelle Wärmeanbindung verschlechtert, da sowohl eine Schirmlage als auch mindestens eine weitere Isolationslage benötigt wird.Shielding, however, is not possible in all cases or can often only be integrated with significant additional costs. Shielding also ensures that any heat connection deteriorates, since both a shielding layer and at least one additional insulation layer are required.
Je nach Applikation (im Hinblick auf Spannung und Strom) können Filterkomponenten vergleichsweise teuer, schwer und voluminös werden.Depending on the application (in terms of voltage and current), filter components can be comparatively expensive, heavy and voluminous.
Eine Verlangsamung der Taktung (Schaltzeit) ist oftmals unerwünscht, da die Taktung entsprechend an andere Anforderungen angepasst ist.A slowdown of the clocking (switching time) is often undesirable because the clocking is adapted accordingly to other requirements.
Es ist daher Aufgabe der vorliegenden Erfindung, eine Anordnung, umfassend einen wärmeabgebenden ersten Widerstand, eine Steuerungsvorrichtung zum Schalten des ersten Widerstandes sowie ein (insbesondere geerdetes) Bauteil, das auf einem Potential ohne direkten Bezug zu einer Ansteuerspannung liegt, insbesondere ein Gehäuse und/oder Chassisbauteil, vorzuschlagen, wobei der erste Widerstand in räumlicher Nähe zu dem Bauteil, insbesondere Gehäuse oder Chassisbauteil, angeordnet ist, wobei Störungen aufgrund des Ein- und Ausschaltens des Widerstandes und/oder aufgrund einer Pulsweitenmodulation auf einfache Art und Weise reduziert werden sollen. Weiterhin ist es Aufgabe der Erfindung, ein entsprechendes Steuerungsverfahren vorzuschlagen.It is therefore an object of the present invention to provide an arrangement comprising a heat-emitting first resistor, a control device for switching the first resistor and a (in particular grounded) component which is at a potential without direct reference to a control voltage, in particular a housing and / or Chassis component to propose, wherein the first resistor is arranged in spatial proximity to the component, in particular housing or chassis component, interference due to the switching on and off of the resistor and / or due to pulse width modulation to be reduced in a simple manner. Furthermore, it is an object of the invention to propose a corresponding control method.
Diese Aufgabe wird durch die Merkmale des Anspruchs 1 gelöst.This object is solved by the features of claim 1.
Insbesondere wird die Aufgabe gelöst durch eine Anordnung, umfassend einen wärmeabgebenden ersten Widerstand, eine Steuerungsvorrichtung zum Schalten des ersten Widerstandes sowie ein (insbesondere geerdetes) Bauteil, das vorzugsweise auf einem Potential ohne (direkten) Bezug zu einer Ansteuerspannung liegt, insbesondere ein Gehäuse und/oder Chassisbauteil,
wobei der erste Widerstand in räumlicher Nähe zu dem Bauteil, insbesondere Gehäuse oder Chassisbauteil, angeordnet ist und einen ersten und einen zweiten Anschluss aufweist, wobei der erste Widerstand und das Bauteil eine Kapazität ausbilden, wobei die Steuerungsvorrichtung eine erste Schaltvorrichtung und eine zweite Schaltvorrichtung umfasst, wobei erste Schaltvorrichtung, erster Widerstand und zweite Schaltvorrichtung in der genannten Reihenfolge in Reihe geschaltet sind und somit eine Reihenschaltung ausbilden. Gemäß einem ersten bevorzugten Aspekt der Erfindung ist eine Kompensationseinrichtung vorgesehen und konfiguriert, so dass im Ein-Zustand des ersten Widerstandes zwischen dem ersten und dem zweiten Anschluss eine Spannung anliegt, so dass der erste Anschluss auf einem ersten Potential liegt und der zweite Anschluss auf einem zweiten Potential liegt, wobei der erste Widerstand im Aus-Zustand auf einem Zwischenpotential, das zwischen dem ersten und dem zweiten Potential liegt,
gehalten wird, insbesondere auf, zumindest ungefähr, halber Versorgungsspannung gehalten wird. Der erste Widerstand ist im Allgemeinen ein Widerstand, der gegen ein fremdes Potential koppelt. Gemäß einem zweiten bevorzugten Aspekt der Erfindung ist (alternativ oder zusätzlich zum ersten bevorzugten Aspekt) die Steuerungsvorrichtung konfiguriert, den ersten Widerstand pulsweiten-moduliert anzusteuern, wobei erste sowie zweite Schaltvorrichtung synchron geschaltet werden.In particular, the object is achieved by an arrangement comprising a heat-emitting first resistor, a control device for switching the first resistor and a (in particular grounded) component which is preferably at a potential without (direct) reference to a control voltage, in particular a housing and / or chassis component,
wherein the first resistor is arranged in spatial proximity to the component, in particular the housing or chassis component, and has a first and a second connection, the first resistor and the component forming a capacitance, the control device comprising a first switching device and a second switching device, wherein the first switching device, first resistor and second switching device are connected in series in the order mentioned and thus form a series connection. According to a first preferred aspect of the invention, a compensation device is provided and configured so that in the on state of the first resistor a voltage is present between the first and the second connection, so that the first connection is at a first potential and the second connection is at a second potential, the first resistor in the off state at an intermediate potential that lies between the first and the second potential,
is held, in particular is kept at, at least approximately, half the supply voltage. The first resistor is generally a resistor that couples to an external potential. According to a second preferred aspect of the invention (alternatively or in addition to the first preferred aspect), the control device is configured to control the first resistor in a pulse-width-modulated manner, the first and second switching devices being switched synchronously.
Ein Kerngedanke des ersten Aspektes der Erfindung liegt darin, dass der (erste) Widerstand im Aus-Zustand auf einem Zwischenpotential gehalten wird, das zwischen dem ersten und dem zweiten Potential liegt. Eine dem Zwischenpotential entsprechende Spannung kann beispielsweise 30 bis 70, vorzugsweise 45 bis 55, noch weiter vorzugsweise 48 bis 52, noch weiter vorzugsweise (zumindest ungefähr) 50 % der Spannung entsprechen, die im Ein-Zustand an dem ersten Anschluss des (ersten) Widerstandes anliegt (was im Regelfall die "Versorgungsspannung" ist). Durch die erfindungsgemäße Kompensationseinrichtung kompensieren sich Ströme, die durch Kapazitäten zwischen dem (ersten) Widerstand und dem Gehäuse erzeugt werden, zumindest teilweise (im Idealfall vollständig). Bei einem (synchronen) insbesondere erstmaligen Einschalten der beiden Schaltvorrichtungen wird ein Strom, der in einer Kapazität fließt, die einem Widerstandsabschnitt entspricht, der vergleichsweise nahe an der ersten Schaltvorrichtung liegt, von einer Kapazität aufgenommen, die einem Widerstandsabschnitt entspricht, der vergleichsweise nahe zu der zweiten Schaltvorrichtung liegt. Ähnliches gilt für weitere Kapazitäten bzw. Kapazitätsanteile, die entsprechenden (spiegelbildlichen) Widerstandsabschnitten entsprechen. Im Idealfall fließt kein Strom mehr über eine Erdanbindung. Das Gleiche (in umgekehrte Richtung) wird ermöglicht, wenn die beiden Schaltvorrichtungen synchron ausgeschaltet werden.A key idea of the first aspect of the invention is that the (first) resistance in the off state is kept at an intermediate potential which lies between the first and the second potential. A voltage corresponding to the intermediate potential can, for example, correspond to 30 to 70, preferably 45 to 55, still more preferably 48 to 52, still more preferably (at least approximately) 50% of the voltage which is in the on state at the first connection of the (first) resistor is present (which is usually the "supply voltage"). The compensation device according to the invention compensates for currents that are generated by capacitances between the (first) resistor and the housing, at least partially (ideally completely). When the two switching devices are switched on (synchronously) in particular for the first time, a current flowing in a capacitance that corresponds to a resistance section that is comparatively close to the first switching device is absorbed by a capacitance that corresponds to a resistance section that is comparatively close to that second switching device. The same applies to other capacities or capacitance shares that correspond to corresponding (mirror-image) resistance sections. Ideally, no more electricity flows through an earth connection. The same (in the opposite direction) is possible if the two switching devices are switched off synchronously.
Ein Kerngedanke des zweiten Aspektes der Erfindung liegt darin, dass der Widerstand pulsweisen-moduliert angesteuert wird, jedoch nicht über nur eine Schaltvorrichtung, sondern synchron (gleichzeitig) über die beiden Schaltvorrichtungen. In diesem Zusammenhang kann dann die Kompensationseinrichtung (mit den weiter unten beschriebenen Widerständen und der weiter unten beschriebenen Verbindungsleitung) ggf. entfallen (bzw. ist nur optional). Diese Kompensationseinrichtung spielt im Wesentlichen nur bei einem Hochfahren bzw. erstmaligen Einschalten der Schaltvorrichtungen eine Rolle und kann dann insbesondere eine EMV-Störung reduzieren. Bei einer PWM-Ansteuerung bzw. darauffolgenden Schaltvorgänge im laufenden Betrieb (z.B. mit kontinuierlichem Heizstrom, wenn der Widerstand ein Heizwiderstand ist) spielt die Kompensationseinrichtung keine (oder - wenn vorgesehen - bestenfalls eine geringe) Rolle mehr, da dann durch ein (nahezu) synchrones Schalten der beiden Schaltvorrichtungen (anstelle nur einer Schaltvorrichtung) effektiv eine gleiche oder zumindest ähnliche Wirkung erzielt werden kann. Letztlich liegt durch die zwei Schaltvorrichtungen auf beiden Seiten des Widerstandes (insbesondere Heizwiderstandes) in dem laufenden PWM-Betrieb auch nicht der vollständige Spannungshub beim PWM-Schalten an, sondern ein geringerer Spannungshub (insbesondere zumindest annähernd nur der Halbe).A core idea of the second aspect of the invention is that the resistance is controlled in a pulse-modulated manner, but not via only one switching device, but synchronously (simultaneously) via the two switching devices. In this context, the compensation device (with the resistances described below and the connecting line described below) may be omitted (or is only optional). This compensation device essentially only plays a role when the switching devices are started up or switched on for the first time and can then in particular reduce an EMC interference. In the case of a PWM control or subsequent switching operations during operation (e.g. with a continuous heating current if the resistor is a heating resistor), the compensation device no longer plays a role (or - if provided - at best a minor one), since this is achieved by an (almost) synchronous one Switching the two switching devices (instead of just one switching device) can effectively achieve the same or at least a similar effect. Ultimately, due to the two switching devices on both sides of the resistor (in particular the heating resistor), the full voltage swing during PWM switching is not present in the current PWM operation, but rather a smaller voltage swing (in particular at least approximately half).
Die obige Kompensationseinrichtung hat also insbesondere den Vorteil, dass beim erstmaligen Anschalten (Hochfahren) bzw. beim endgültigen Ausschalten (Herunterfahren) des Widerstandes (Heizwiderstandes) ein einmaliger Puls zu diesem Zeitpunkt kompensiert oder zumindest minimiert wird. Für das Kompensieren von Störungen während des Betriebes (also während einer PWM-Ansteuerung) ist eine derartige Kompensationseinrichtung (mit den weiter unten beschriebenen Widerständen und der Verbindungsleitung) nicht zwingend erforderlich. Dazu ist es erfindungsgemäß (gemäß dem zweiten Aspekt) vorgesehen, dass die Steuervorrichtung so konfiguriert ist, dass die beiden Schaltvorrichtungen synchron (insbesondere gleichzeitig) geschaltet werden können.The above compensation device therefore has the particular advantage that when switching on (ramping up) for the first time or when finally switching off (ramping down) the resistor (heating resistor), a one-time pulse is compensated for or at least minimized at this time. Such a compensation device (with the resistors described below and the connecting line) is not absolutely necessary for compensating for faults during operation (that is, during a PWM control). For this purpose, it is provided according to the invention (according to the second aspect) that the control device is configured such that the two switching devices can be switched synchronously (in particular simultaneously).
Grundsätzlich ist zwischen einem Einschalten des Widerstandes (also einem Wechsel von Aus-Zustand in Ein-Zustand bzw. einem Ausschalten des Widerstandes, also einem Wechsel von Ein-Zustand in Aus-Zustand) und einem Schalten der Schaltvorrichtungen zu unterscheiden. In diesem Sinne ist ein Ein-Schalten des Widerstandes (insbesondere Heizwiderstandes) insbesondere als ein erstmaliges Hochfahren (nach einer längeren Pause, von beispielsweise mindestens 10 Sekunden oder mindestens einer Minute) zu verstehen. Ein AusSchalten ist demgemäß insbesondere als ein endgültiges (zumindest für die Dauer von mindestens 10 Sekunden oder mindestens einer Minute) Herunterfahren des Widerstandes zu verstehen (bzw. Trennen des Widerstandes von der Stromquelle). Auch bei einer PWM-Ansteuerung kommt es zu äußerst kurzen (durch die einzelnen Pulse getrennten) Unterbrechungen in der Versorgung. Während dieser sehr kurzen Unterbrechungen befindet sich der Widerstand (insbesondere Heizwiderstand) jedoch immer noch im Ein-Zustand. Mit anderen Worten kann also die erste oder zweite Schaltvorrichtung in einem Ein-Zustand des Widerstandes ausgeschaltet sein (also einen Strom sperren). Bezogen auf die Schaltvorrichtungen soll zwischen einer Einschaltzeitdauer (also einer Zeitdauer, in der die Schaltvorrichtung Strom nicht sperrt) und einer Ausschaltzeitdauer (also einer Zeitdauer, in der die Schaltvorrichtung den Strom sperrt) unterschieden werden. Wenn bei den Schaltvorrichtungen auf den Zeitpunkt der Inbetriebnahme des Widerstandes Bezug genommen wird, soll insbesondere von einem "erstmaligem" Einschalten der jeweiligen Schaltvorrichtung die Rede sein. Wenn bei den Schaltvorrichtungen das Herunterfahren des Widerstandes in Bezug genommen wird, soll von einem "endgültigen" Ausschalten der Schaltvorrichtungen die Rede sein. Auch hier soll ein erstmaliges Einschalten, insbesondere als Einschalten nach einer Unterbrechung von mindestens 10 Sekunden oder mindestens einer Minute verstanden werden. Genauso soll ein endgültiges Ausschalten eine Unterbrechung des Betriebes des Widerstandes (Heizwiderstandes) von mindestens 10 Sekunden, vorzugsweise mindestens einer Minute bedeuten.A basic distinction must be made between switching the resistor on (that is, a change from the off state to the on state or switching the resistor off, that is, a change from the on state to the off state) and switching the switching devices. In this sense, switching on the resistor (in particular heating resistor) is to be understood in particular as starting up for the first time (after a longer pause, for example at least 10 seconds or at least one minute). On and off is accordingly to be understood in particular as a final (at least for a period of at least 10 seconds or at least one minute) shutdown of the resistor (or disconnection of the resistor from the power source). Even with a PWM control there are extremely short (separated by the individual pulses) interruptions in the supply. However, during these very short interruptions, the resistor (especially the heating resistor) is still in the on state. In other words, the first or second switching device can be switched off (that is to say block a current) when the resistor is in an on state. With regard to the switching devices, a distinction should be made between a switch-on period (that is, a period in which the switching device does not block current) and a switch-off period (that is, a period in which the switching device blocks the current). If reference is made to the point in time at which the resistor is put into operation in the switching devices, the "switching on of the respective switching device for the first time" should be mentioned in particular. When referring to the shutdown of the resistance in the switching devices, there should be talk of a "final" switching off of the switching devices. Here too, switching on for the first time, in particular switching on after an interruption of at least 10 seconds or at least one minute, should be understood. Likewise, a final switch-off should mean an interruption in the operation of the resistor (heating resistor) for at least 10 seconds, preferably at least one minute.
Unter einer "räumlichen Nähe" zwischen dem (ersten) Widerstand und dem Bauteil (z.B. Gehäuse) soll insbesondere ein (Minimal-) Abstand von weniger als 1 cm, insbesondere weniger als 0,5 cm zwischen Widerstand und Bauteil verstanden werden. Der "Minimalabstand" ist der kleinste Abstand, wenn ein Abstand zwischen Widerstand und Bauteil (räumlich, d.h. entlang einer Erstreckung eines Zwischenraumes) nicht konstant ist. Widerstand und Bauteil sollen jedoch insofern voneinander beabstandet sein, dass zwischen Widerstand und Gehäuse kein Kurzschluss ausgebildet ist. Bei dem (ersten) Widerstand handelt es sich vorzugsweise um den Widerstand einer elektrischen Heizeinrichtung, insbesondere elektrischen Schichtheizeinrichtung. Elektrische Schichtheizeinrichtungen umfassen einen Heizwiderstand, der sich flächig erstreckt und beim Durchleiten eines elektrischen Stroms erwärmt. Generell handelt es sich bei dem Widerstand um einen Widerstand, der zur Wärmeabfuhr in räumlicher Nähe zu einem (insbesondere geerdeten) Bauteil, das vorzugsweise auf einem Potential ohne direkten Bezug zu einer Ansteuerspannung liegt, insbesondere zu einem Gehäuse und/oder einem Chassisbauteil, angeordnet ist. Bei dem Widerstand kann es sich generell um einen Heiz-Widerstand handeln, also dasjenige Bauteil, über das in einer Heizeinrichtung Wärme zur Heizung erzeugt wird oder um einen anderen Widerstand, der ggf. gekühlt werden muss.A "spatial proximity" between the (first) resistor and the component (eg housing) is to be understood in particular as a (minimum) distance of less than 1 cm, in particular less than 0.5 cm, between the resistor and the component. The "minimum distance" is the smallest distance if a distance between the resistor and the component (spatial, ie along an extension of an intermediate space) is not constant. Resistor and component should, however, be spaced apart from one another to the extent that no short circuit is formed between the resistor and the housing. The (first) resistor is preferably the resistance of an electrical heating device, in particular an electrical layer heating device. Electrical Layer heating devices comprise a heating resistor which extends flat and heats up when an electrical current is passed through. In general, the resistor is a resistor which is arranged for heat dissipation in close proximity to a (in particular grounded) component, which is preferably at a potential without direct reference to a control voltage, in particular to a housing and / or a chassis component . The resistor can generally be a heating resistor, that is to say the component that is used to generate heat for heating in a heating device or another resistor that may have to be cooled.
In einer Ausführungsform umfasst die Steuerungsvorrichtung einen (hochohmigen) zweiten Widerstand, einen (hochohmigen) dritten Widerstand und eine Verbindungsleitung, wobei der zweite und dritte Widerstand zueinander in Reihe geschaltet sind und gegenüber der Reihenschaltung aus erster Schalteinrichtung, erstem Widerstand und zweiter Schalteinrichtung parallel geschaltet sind, wobei die Verbindungsleitung einen Punkt zwischen dem zweiten und dem dritten Widerstand mit einem Punkt zwischen den beiden Schaltvorrichtungen verbindet. Bei einer derartigen Struktur kann auf einfache Art und Weise das gewünschte Zwischenpotential (insbesondere Mittenspannung) eingestellt werden. Unter einem hochohmigen Widerstand ist ein Widerstand zu verstehen, dessen Widerstandswert deutlich (z.B. mindestens um das Doppelte oder mindestens das Fünffache) über dem Widerstandswert des ersten Widerstandes liegt. Beispielsweise kann der Widerstandswert eines (hochohmigen) Widerstandes mindestens 1 kΩ, vorzugsweise mindestens 1 MΩ betragen.In one embodiment, the control device comprises a (high-resistance) second resistor, a (high-resistance) third resistor and a connecting line, the second and third resistor being connected in series with one another and connected in parallel with the series connection comprising the first switching device, the first resistor and the second switching device , wherein the connecting line connects a point between the second and the third resistor with a point between the two switching devices. With such a structure, the desired intermediate potential (in particular center voltage) can be set in a simple manner. A high-resistance resistor is a resistor whose resistance value is significantly (e.g. at least twice or at least five times) higher than the resistance value of the first resistor. For example, the resistance value of a (high-resistance) resistor can be at least 1 kΩ, preferably at least 1 MΩ.
Alternativ oder zusätzlich zu dem zweiten und dritten Widerstand kann die Kompensationseinrichtung eine aktive Beschaltung aufweisen, die bewirkt, dass eine entsprechende Spannung (insbesondere Mittenspannung) auf dem ersten Widerstand eingestellt werden kann.As an alternative or in addition to the second and third resistor, the compensation device can have an active circuit, which has the effect that a corresponding voltage (in particular center voltage) can be set on the first resistor.
Ein Widerstandswert des zweiten Widerstands und ein Widerstandswert des dritten Widerstandes unterscheiden sich um höchstens 10 %. Weiter vorzugsweise sind die Widerstandswerte von zweitem und drittem Widerstand (zumindest im Wesentlichen) gleich groß. Der Unterschied (von höchstens 10 %) soll derart berechnet werden, dass zunächst eine Differenz der Widerstandswerte gebildet wird und diese Differenz durch den kleineren Widerstandswert geteilt wird (und dann mit 100 multipliziert wird, um zu einer Prozentangabe zu kommen). Insbesondere wenn die Widerstände im Wesentlichen (bzw. zumindest im Wesentlichen) gleich groß sind, können Störungen, wie oben beschrieben, deutlich reduziert oder im Idealfall sogar völlig vermieden werden.A resistance value of the second resistor and a resistance value of the third resistor differ by at most 10%. The resistance values of second and third resistor are further preferred (at least essentially) the same size. The difference (of at most 10%) should be calculated in such a way that first a difference of the resistance values is formed and this difference is divided by the smaller resistance value (and then multiplied by 100 to arrive at a percentage). In particular, if the resistances are essentially (or at least essentially) the same size, disturbances, as described above, can be significantly reduced or, in the ideal case, even completely avoided.
Die oben genannte Verbindungsleitung kann beispielsweise (etwa) in einer Mitte des ersten Widerstandes angeschlossen sein. Es ist jedoch (davon abweichend) auch denkbar, die Verbindungsleitung an einem anderen Punkt (zwischen erster und zweiter Schaltvorrichtung) anzuschließen, beispielsweise an (oder in der Nähe) der ersten Schaltvorrichtung oder der zweiten Schaltvorrichtung oder auch an mehreren Punkten.The above-mentioned connecting line can, for example, be connected (approximately) in a center of the first resistor. However, (deviating from this) it is also conceivable to connect the connecting line at another point (between the first and second switching device), for example at (or in the vicinity) of the first switching device or the second switching device or also at several points.
Erste und/oder zweite Schaltvorrichtung sind vorzugsweise als Transistor, insbesondere MOSFET oder IGBT, ausgebildet oder umfassen einen solchen Transistor (MOSFET oder IGBT), vorzugsweise auf der Basis von Silicium oder Siliciumcarbid oder Galliumarsenid. Dadurch wird eine Struktur bereitgestellt, die schnell und zuverlässig geschaltet werden kann.The first and / or second switching device are preferably designed as a transistor, in particular MOSFET or IGBT, or comprise such a transistor (MOSFET or IGBT), preferably based on silicon or silicon carbide or gallium arsenide. This provides a structure that can be switched quickly and reliably.
Die Anordnung gemäß dem ersten Aspekt umfasst vorzugsweise eine Steuerungseinrichtung, die konfiguriert ist, erste und zweite Schaltungsvorrichtung synchron (gleichzeitig) zu schalten. Grundsätzlich kann die (bevorzugt synchrone) Schaltung jedoch auch durch ein anderes Bauteil zur Verfügung gestellt werden, das nicht zwingend Bestandteil der Anordnung ist. Insofern zeichnet sich die Anordnung gemäß dem ersten Aspekt grundsätzlich vor allem dadurch aus, dass (in elektrischer Hinsicht) eine Struktur bereitgestellt wird, die (bei vorzugsweise synchroner Schaltung) eine entsprechende Kompensation auf einfache Art und Weise ermöglicht.The arrangement according to the first aspect preferably comprises a control device that is configured to switch first and second switching devices synchronously (simultaneously). In principle, however, the (preferably synchronous) circuit can also be provided by another component that is not necessarily part of the arrangement. In this respect, the arrangement according to the first aspect is principally characterized in that (in electrical terms) a structure is provided which (with preferably synchronous switching) enables corresponding compensation in a simple manner.
Vorzugsweise ist eine Stützeinrichtung, insbesondere umfassend eine oder mehrere Kapazitäten, beispielsweise parallel zum zweiten und/oder dritten Widerstand, zur Stützung einer dem Zwischenpotential entsprechenden Spannung (insbesondere Mittenspannung) vorgesehen. Wenn erste und zweite Schaltvorrichtung nicht "100 %" synchron eingeschaltet werden können, führt dies je nach Schaltzeit und Zeitverschiebung zu einem unterschiedlich hohen Strom, der über eine Erdanbindung abfließt. Die Stützeinrichtung (insbesondere Kondensatoren) können nun die gewünschte Spannung (Mittenspannung) stützen, um den Effekt der Zeitverschiebung zu mildern. Im einfachsten Fall sind Kondensatoren parallel zu dem zweiten und dritten (hochohmigen) Widerstand geschaltet.A support device, in particular comprising one or more capacitances, for example parallel to the second and / or third resistor, is preferred for supporting a voltage corresponding to the intermediate potential (especially center voltage) is provided. If the first and second switching devices cannot be switched on "100%" synchronously, depending on the switching time and time difference, this leads to a differently high current that flows away via an earth connection. The support device (in particular capacitors) can now support the desired voltage (center voltage) in order to mitigate the effect of the time shift. In the simplest case, capacitors are connected in parallel to the second and third (high-resistance) resistor.
Weiterhin kann ein Microcontroller und/oder FPGA vorgesehen sein. Ein FPGA (Field Programmable Gate Array) ist ein integrierter Schaltkreis (in den eine logische Schaltung programmiert werden kann). Microcontroller bzw. FPGA sind zur Steuerung der Schaltung der ersten und/oder zweiten Schaltvorrichtung vorgesehen, insbesondere zum Nachschärfen eines Schaltzeitpunktes der ersten und zweiten Schaltvorrichtung. Auch dadurch können Schwierigkeiten im Hinblick auf ein "Timing" (Schalt-Zeitpunkt) der beiden Schaltvorrichtungen (insbesondere Transistoren bzw. MOSFETs oder IGBTs, vorzugsweise auf der Basis von Silicium oder Siliciumcarbid oder Galliumarsenid) deutlich gemildert werden, indem dieses "Timing" nachgeschärft wird, um einen höchstmöglichen Grad an Synchronität zu erreichen. Dadurch kann eine effektive Kompensation erfolgen.A microcontroller and / or FPGA can also be provided. An FPGA (Field Programmable Gate Array) is an integrated circuit (in which a logic circuit can be programmed). Microcontrollers or FPGAs are provided for controlling the switching of the first and / or second switching device, in particular for resharpening a switching time of the first and second switching device. Difficulties with regard to a "timing" (switching time) of the two switching devices (in particular transistors or MOSFETs or IGBTs, preferably based on silicon or silicon carbide or gallium arsenide) can also be significantly alleviated by sharpening this "timing" to achieve the highest possible level of synchronicity. This enables effective compensation.
Die Anordnung kann weiterhin eine Stromquelle, insbesondere Gleichstromquelle umfassen. Eine solche Stromquelle kann jedoch auch extern bereitgestellt werden, so dass die Anordnung lediglich entsprechende Anschlüsse zum Anschließen einer Stromquelle aufweist.The arrangement can furthermore comprise a current source, in particular a direct current source. However, such a current source can also be provided externally, so that the arrangement only has corresponding connections for connecting a current source.
Vorzugsweise ist ein zeitlicher Abstand zwischen einem Einschaltzeitpunkt der ersten Schaltvorrichtung und einem Einschaltzeitpunkt der zweiten Schaltvorrichtung weniger als 20 %, vorzugsweise weniger als 5 % einer Einschaltzeitdauer der ersten Schaltvorrichtung. Alternativ oder zusätzlich ist ein zeitlicher Abstand zwischen einem Ausschaltzeitpunkt der ersten Schaltvorrichtung und einem Ausschaltzeitpunkt der zweiten Schaltvorrichtung weniger als 20 %, vorzugsweise weniger als 5 % einer Einschaltzeitdauer der ersten Schaltvorrichtung.A time interval between a switch-on time of the first switching device and a switch-on time of the second switching device is preferably less than 20%, preferably less than 5%, of a switch-on time period of the first switching device. Alternatively or additionally, a time interval between a switch-off time of the first switching device and a switch-off time of the second switching device is less than 20%, preferably less than 5%, of a switch-on time of the first switching device.
Eine Taktrate (Frequenz) der PWM-Ansteuerung ist vorzugsweise in einem Bereich von 1 kHz bis 30 kHz , weiter vorzugsweise von 8 kHz bis 25 kHz. Eine Impulsbreite (Tastgrad) der PWM-Ansteuerung ist vorzugsweise im Bereich von 1 % bis 100 % eines Taktes.A clock rate (frequency) of the PWM control is preferably in a range from 1 kHz to 30 kHz, more preferably from 8 kHz to 25 kHz. A pulse width (duty cycle) of the PWM control is preferably in the range from 1% to 100% of a cycle.
Die oben genannte Aufgabe wird weiterhin gelöst durch ein Steuerungsverfahren, insbesondere unter Verwendung der obigen Anordnung, zum Schalten eines in räumlicher Nähe zu einem (insbesondere geerdeten) Bauteil, das vorzugsweise auf einem Potential ohne (direkten) Bezug zu einer Ansteuerspannung liegt, insbesondere zu einem Gehäuse und/oder Chassisbauteil, angeordneten wärmeabgebenden, ersten Widerstandes mit einem ersten und einem zweiten Anschluss, wobei der erste Widerstand und das Bauteil eine Kapazität ausbilden. Gemäß einem ersten bevorzugten Aspekt des Verfahrens liegt der erste Anschluss in einem Ein-Zustand des ersten Widerstandes auf einem ersten Potential und der zweite Anschluss in einem Ein-Zustand auf einem zweiten Potential liegt, wobei der Widerstand in einem Aus-Zustand auf einem Zwischenpotential, das zwischen dem ersten und dem zweiten Potential liegt, gehalten wird, insbesondere auf, zumindest ungefähr, halber Versorgungsspannung gehalten wird. Gemäß einem zweiten bevorzugten Aspekt des Verfahrens wird der (erste) Widerstand (insbesondere Heizwiderstand) pulsweiten-moduliert angesteuert, wobei eine erste, dem ersten Anschluss zugeordnete Schaltvorrichtung und eine zweite, dem zweiten Anschluss zugeordnete Schaltvorrichtung synchron geschaltet werden.The above-mentioned object is further achieved by a control method, in particular using the above arrangement, for switching a component in spatial proximity to an (in particular grounded) component which is preferably at a potential without (direct) reference to an actuation voltage, in particular an Housing and / or chassis component, arranged heat-emitting, first resistor with a first and a second connection, the first resistor and the component forming a capacitance. According to a first preferred aspect of the method, the first connection is in an on state of the first resistor at a first potential and the second connection is in an on state at a second potential, the resistor in an off state at an intermediate potential, that lies between the first and the second potential is held, in particular is held at, at least approximately, half the supply voltage. According to a second preferred aspect of the method, the (first) resistor (in particular heating resistor) is controlled in a pulse-width-modulated manner, a first switching device assigned to the first connection and a second switching device assigned to the second connection being switched synchronously.
Vorzugsweise werden auch beim ersten Aspekt des Verfahrens eine erste, dem ersten Anschluss zugeordnete Schaltvorrichtung und eine zweite, dem zweiten Anschluss zugeordnete Schaltvorrichtung synchron (insbesondere gleichzeitig) geschaltet, zumindest beim erstmaligen Einschalten und endgültigen Ausschalten.In the first aspect of the method, too, a first switching device assigned to the first connection and a second switching device assigned to the second connection are preferably switched synchronously (in particular simultaneously), at least when they are switched on for the first time and finally switched off.
Ein zeitlicher Abstand zwischen einem Einschaltzeitpunkt der ersten Schaltvorrichtung und einem Einschaltzeitpunkt der zweiten Schaltvorrichtung ist vorzugsweise weniger als 20 %, vorzugsweise weniger als 5 % einer Einschaltzeitdauer der ersten Schaltvorrichtung. Alternativ oder zusätzlich ist ein zeitlicher Abstand zwischen einem Ausschaltzeitpunkt der ersten Schaltvorrichtung und einem Ausschaltzeitpunkt der zweiten Schaltvorrichtung weniger als 20 %, vorzugsweise weniger als 5 % einer Einschaltzeitdauer der ersten Schaltvorrichtung.A time interval between a switch-on time of the first switching device and a switch-on time of the second switching device is preferably less than 20%, preferably less than 5%, of a switch-on time period of the first switching device. Alternatively or additionally, there is a time interval between a switch-off time of the first switching device and a switch-off time of the second switching device less than 20%, preferably less than 5%, of an on period of the first switching device.
Die oben genannte Aufgabe wird weiterhin durch eine elektrische Heizeinrichtung, insbesondere Schichtheizeinrichtung, umfassend eine Anordnung der oben beschriebenen Art und/oder ausgebildet zur Durchführung des oben beschriebenen Steuerungsverfahrens gelöst. Hinsichtlich der Vorteile der elektrischen Heizeinrichtung sowie des Steuerungsverfahrens wird auf die Ausführungen zur oben beschriebenen Anordnung verwiesen. Die elektrische Heizeinrichtung kann auch einen (getakteten) Drahtheizer oder ein PCT-Element als Heizelement umfassen.The above-mentioned object is further achieved by an electrical heating device, in particular a layer heating device, comprising an arrangement of the type described above and / or designed to carry out the control method described above. With regard to the advantages of the electrical heating device and the control method, reference is made to the explanations regarding the arrangement described above. The electrical heating device can also comprise a (clocked) wire heater or a PCT element as the heating element.
Die elektrische Schichtheizung kann eine Heizschicht umfassen, die einen elektrischen Widerstand ausbildet und durch Fließen eines Stroms durch die Heizschicht erwärmt wird, so dass Wärme zum Heizen abgegeben werden kann.The stratified electric heater may include a stratified heater that forms an electrical resistance and is heated by flowing a current through the stratified heater so that heat can be given off for heating.
Die Heizschicht (Heizbeschichtung) kann beispielsweise in einem Plasmabeschichtungsverfahren, insbesondere Plasmaspritzen, oder in einem Siebdruckverfahren oder als Widerstandspaste, insbesondere auf die Isolierschicht, aufgetragen werden. In dem Plasmabeschichtungsverfahren kann beispielsweise zunächst eine elektrisch leitende Schicht, insbesondere auf die Isolierschicht, aufgetragen werden. Aus der elektrisch leitfähigen Schicht können anschließend Bereiche ausgeschnitten werden, so dass eine Leiterbahn oder mehrere Leiterbahnen übrigbleiben. Bevorzugt kommt jedoch eine Maskiertechnik zum Einsatz. Die Leiterbahnen können dann den Heizwiderstand oder mehrere Heizwiderstände bilden. Die genannten Bereiche können alternativ zu einer Maskiertechnik, beispielsweise mittels eines Lasers aus der leitfähigen Schicht herausgeschnitten werden. Die Heizbeschichtung kann beispielsweise eine Metallschicht sein und ggf. Nickel und/oder Chrom enthalten oder aus diesen Materialien bestehen. Beispielsweise können 70-90 % Nickel und 10-30 % Chrom verwendet werden, wobei ein Verhältnis von 80 % Nickel und 20 % Chrom als gut geeignet betrachtet wird.The heating layer (heating coating) can be applied, for example, in a plasma coating process, in particular plasma spraying, or in a screen printing process or as a resistance paste, in particular on the insulating layer. In the plasma coating process, for example, an electrically conductive layer can first be applied, in particular to the insulating layer. Areas can then be cut out of the electrically conductive layer, so that one or more conductor tracks remain. However, masking technology is preferably used. The conductor tracks can then form the heating resistor or several heating resistors. As an alternative to a masking technique, the areas mentioned can be cut out of the conductive layer, for example by means of a laser. The heating coating can, for example, be a metal layer and possibly contain nickel and / or chromium or consist of these materials. For example, 70-90% nickel and 10-30% chromium can be used, with a ratio of 80% nickel and 20% chromium being considered well suited.
Die Heizbeschichtung kann beispielsweise eine Fläche von mindestens 5 cm2, vorzugsweise mindestens 10 cm2 und/oder höchstens 200 cm2, vorzugsweise höchstens 100 cm2, einnehmen.The heating coating can, for example, have an area of at least 5 cm 2 , preferably at least 10 cm 2 and / or at most 200 cm 2 , preferably at most 100 cm 2 .
Die Heizbeschichtung hat vorzugsweise eine Höhe (Dicke) von mindestens 5 µm, vorzugsweise mindestens 10 µm und/oder höchstens einem 1 mm, vorzugsweise höchstens 500 µm, noch weiter vorzugsweise höchstens 30 µm, noch weiter vorzugsweise höchstens 20 µm. Eine durch die Heizbeschichtung definierte Leiterbahn kann mindestens 1 mm, vorzugsweise mindestens 3 mm, noch weiter vorzugsweise mindestens 5 mm, noch weiter vorzugsweise mindestens 10 mm, noch weiter vorzugsweise mindestens 30 mm breit sein. Unter "Breite" soll die Ausdehnung der Leiterbahn senkrecht zu ihrer Längserstreckung (die üblicherweise auch die Richtung des Stromflusses definiert) verstanden werden.The heating coating preferably has a height (thickness) of at least 5 μm, preferably at least 10 μm and / or at most 1 mm, preferably at most 500 μm, even more preferably at most 30 μm, even more preferably at most 20 μm. A conductor track defined by the heating coating can be at least 1 mm, preferably at least 3 mm, even more preferably at least 5 mm, even more preferably at least 10 mm, even more preferably at least 30 mm wide. “Width” is to be understood as the extent of the conductor track perpendicular to its longitudinal extension (which usually also defines the direction of the current flow).
Die erfindungsgemäße Anordnung (und insbesondere eine ggf. vorgesehene Heizbeschichtung) kann zum Betrieb im Niedervoltbereich, vorzugsweise für 12 Volt, 24 Volt oder 48 Volt ausgelegt sein. Unter "Niedervoltbereich" soll vorzugsweise eine Betriebsspannung von unter 100 Volt, insbesondere unter 60 Volt (Gleichstrom) verstanden werden. Vorzugsweise ist die erfindungsgemäße Anordnung (und insbesondere eine ggf. vorgesehene Heizbeschichtung) zum Betrieb im Hochvoltbereich, vorzugsweise für über 100 V Volt oder über 250 V oder über 500 V, z.B. in einem Bereich von 250-800 V, ausgelegt. In einem höheren Voltbereich sind die oben erläuternden, zu vermeidenden, Effekte beim Stand der Technik besonders ausgeprägt. Im Allgemeinen ist die Anordnung und insbesondere eine ggf. vorgesehene Heizbeschichtung für einen Betrieb mit Gleichstrom ausgelegt.The arrangement according to the invention (and in particular a possibly provided heating coating) can be designed for operation in the low-voltage range, preferably for 12 volts, 24 volts or 48 volts. "Low-voltage range" should preferably be understood to mean an operating voltage of less than 100 volts, in particular less than 60 volts (direct current). The arrangement according to the invention (and in particular a heating coating which may be provided) is preferably for operation in the high-voltage range, preferably for over 100 V volts or over 250 V or over 500 V, e.g. in a range of 250-800 V. In a higher volt range, the effects to be avoided which are explained above are particularly pronounced in the prior art. In general, the arrangement and in particular any heating coating that may be provided is designed for operation with direct current.
Die Schichtheizung bzw. Heizbeschichtung kann grundsätzlich wie in
Die bereits erwähnten Widerstände können grundsätzlich aus einem beliebigen elektrisch leitfähigen Material gefertigt sein, sind jedoch vorzugsweise aus Metall.The resistors already mentioned can in principle be made of any electrically conductive material, but are preferably made of metal.
Die erfindungsgemäße Anordnung und/oder das erfindungsgemäße Verfahren und insbesondere die elektrische Heizeinrichtung sind vorzugsweise für die Verwendung in einem Fahrzeug, insbesondere Kraftfahrzeug vorgesehen und/oder entsprechend konfiguriert.The arrangement according to the invention and / or the method according to the invention and in particular the electrical heating device are preferably provided for and / or configured accordingly for use in a vehicle, in particular a motor vehicle.
Weitere Ausführungsformen ergeben sich aus den Unteransprüchen.Further embodiments result from the subclaims.
Nachfolgend wird die Erfindung anhand eines Beispiels gemäß dem Stand der Technik sowie einem ersten Ausführungsbeispiel beschrieben, die anhand der Abbildungen näher erläutert werden. Hierbei zeigen:
- Fig. 1
- Eine Anordnung zur Stromversorgung und Schaltung eines in der Nähe eines Gehäuses angeordneten Widerstandes gemäß dem Stand der Technik;
- Fig. 2
- eine Anordnung zur Stromversorgung und Schaltung eines in der Nähe eines Gehäuses angeordneten Widerstandes gemäß einem ersten Ausführungsbeispiel der Erfindung während eines ersten Schaltvorgangs;
- Fig. 3
- eine Anordnung gemäß
Fig. 2 während eines zweiten Schaltvorgangs; und - Fig. 4
- eine Anordnung zur Stromversorgungsschaltung eines in der Nähe eines Gehäuses angeordneten Widerstandes gemäß einem zweiten Ausführungsbeispiel der Erfindung.
- Fig. 1
- An arrangement for the power supply and switching of a resistor arranged in the vicinity of a housing according to the prior art;
- Fig. 2
- an arrangement for power supply and switching of a resistor arranged in the vicinity of a housing according to a first embodiment of the invention during a first switching operation;
- Fig. 3
- an arrangement according to
Fig. 2 during a second shift; and - Fig. 4
- an arrangement for the power supply circuit of a resistor arranged in the vicinity of a housing according to a second embodiment of the invention.
In der nachfolgenden Beschreibung werden für gleiche und gleichwirkende Teile dieselben Bezugsziffern verwendet.In the following description, the same reference numbers are used for the same and equivalent parts.
Die in
Weiterhin ist ein Schalter M (konkret ein Transistor, insbesondere MOSFET oder IGBT) vorgesehen, der ein- und ausgeschaltet werden kann. Wird der Schalter M ausgeschaltet, liegt der Widerstand R1 bis R4 auf Versorgungsspannung, die durch eine Spannungsversorgung 11 bereitgestellt wird. Wird der Schalter M nun (erstmalig) eingeschaltet, verändert sich die Spannung über dem Widerstand R1 bis R4. Das (in
Im Mittel wird die vollständige Kapazität um die halbe Versorgungsspannung entladen.On average, the full capacity is discharged by half the supply voltage.
Wird nun der Schalter M (endgültig) ausgeschaltet, wiederholt sich grundsätzlich das eben Beschriebene. Die Kapazitäten werden jedoch nicht entladen, sondern bis zur Versorgungsspannung aufgeladen. Dieses Laden und Entladen der Kondensatoren C1 bis C5 kann je nach Geschwindigkeit der Schaltung zu deutlichen EMV-Störungen führen (sowohl leitungsgebunden als auch abgestrahlt).If the switch M is now (finally) switched off, what has just been described is basically repeated. The capacities are not discharged, however, but charged up to the supply voltage. This loading and unloading of the Depending on the speed of the circuit, capacitors C1 to C5 can lead to significant EMC interference (both wired and radiated).
Das Bezugszeichen 12 kennzeichnet einen Zwischenkreis-Kondensator. Weitere Kondensatoren 13 sowie Induktivitäten 14 sind Bestandteile einer Netznachbildung (englisch: Line Impedance Stabilization Network, LISN) und für die vorliegende Erfindung nicht weiter von Bedeutung. Durch das Bezugszeichen 15 ist eine Erdanbindung des Gehäuses 10 symbolisiert.
In
Im Unterschied zum Stand der Technik umfasst die Anordnung gemäß
I1 und I2 symbolisieren Ströme, die bei einem Einschalten der Schalter M1 und M2 fließen.I1 and I2 symbolize currents that flow when switches M1 and M2 are switched on.
Die beiden (hochohmigen) Widerstände 16, 17 haben im vorliegenden Ausführungsbeispiel den gleichen Wert (können jedoch auch ggf., zumindest geringfügig, variieren). Die Schalter M1, M2 werden synchron (gleichzeitig) geschaltet.The two (high-resistance)
Beim synchronen (insbesondere erstmaligen) Einschalten von M1 und M2 wird der Strom, der in C5 fließt (direkt) von C1 aufgenommen. Analoges gilt für C4 und C2. Im Idealfall fließt dann kein Strom mehr über die Erdanbindung. Im Prinzip das Gleiche (in umgekehrter Richtung) geschieht, wenn M1 und M2 synchron ausgeschaltet werden. Dies ist in
Wenn die Schaltvorrichtungen M1 und M2 nicht (exakt) synchron eingeschaltet werden, fließt je nach Schaltzeit und Zeitverschiebung ein bestimmter Strom über die Erdanbindung 15. Selbst bei nicht (exakt) synchron schaltenden Schaltvorrichtungen M1 und M2 kann der unerwünschte Strom jedoch um mindestens den Faktor 10 reduziert werden (im Vergleich zur Ansteuerung gemäß
Die Schaltvorrichtungen M1, M2 werden durch eine Steuerungseinrichtung 19 (nicht im Detail dargestellt) gesteuert. Die (hochohmigen) Widerstände 16, 17 und die Verbindungsleitung 18 sind Elemente einer Kompensationseinrichtung 20, die (wie oben beschrieben) dafür sorgt, dass im (endgültig) ausgeschalteten Zustand der Schaltvorrichtungen M1, M2 eine Mittenspannung an dem Widerstand R1 bis R4 anliegt.The switching devices M1, M2 are controlled by a control device 19 (not shown in detail). The (high-resistance)
Auch kann ggf. eine (schnelle) Steuereinheit, wie beispielsweise ein Microcontroller oder FPGA den Schaltzeitpunkt (Timing) der beiden Schaltvorrichtungen (MOSFETs) M1 und M2 nachschärfen, um einen vergleichsweise hohen Grad an Synchronität zu erreichen.If necessary, a (fast) control unit, such as a microcontroller or FPGA, can also re-sharpen the switching time (timing) of the two switching devices (MOSFETs) M1 and M2 in order to achieve a comparatively high degree of synchronicity.
An dieser Stelle sei darauf hingewiesen, dass alle oben beschriebenen Teile für sich alleine gesehen und in jeder Kombination, insbesondere die in den Zeichnungen dargestellten Details, als erfindungswesentlich beansprucht werden. Abänderungen hiervon sind dem Fachmann geläufig.At this point, it should be pointed out that all the parts described above, viewed on their own and in any combination, in particular the details shown in the drawings, are claimed as essential to the invention. Modifications to this are familiar to the person skilled in the art.
- C1 - C5C1 - C5
- Kondensatoren (als symbolische Darstellung einer Gesamt-Kapazität)Capacitors (as a symbolic representation of a total capacitance)
- MM
- SchaltvorrichtungSwitching device
- M1M1
- Erste SchaltvorrichtungFirst switching device
- M2M2
- Zweite SchaltvorrichtungSecond switching device
- R1 - R4R1 - R4
- Widerstände (als symbolische Darstellung eines Gesamt-Widerstandes)Resistors (as a symbolic representation of an overall resistance)
- 1010
- Gehäusecasing
- 1111
- SpannungsversorgungPower supply
- 1212th
- ZwischenkondensatorIntermediate capacitor
- 1313
- Kapazitätcapacity
- 1414
- InduktivitätInductance
- 1515
- ErdanbindungEarth connection
- 1616
- Zweiter (hochohmiger) WiderstandSecond (high impedance) resistance
- 1717
- Dritter (hochohmiger) WiderstandThird (high impedance) resistance
- 1818th
- VerbindungsleitungConnecting line
- 1919
- Steuerungseinrichtungcontrol device
- 2020th
- KompensationseinrichtungCompensation device
Claims (12)
- An assembly, comprising a heat-emitting first resistor (R1 to R4), a control device for switching the first resistor (R1 to R4), as well as an in particular grounded component which is at a potential without any direct relation to a driving voltage, in particular a housing or chassis component (10),- wherein the first resistor (R1 to R4) is arranged in spatial proximity to the component, in particular the housing (10), and has a first and a second connection, wherein the first resistor (R1 to R4) and the component form a capacitance (C1 to C5),- wherein the control device comprises a first switching device (M1) and a second switching device (M2),- wherein the first switching device (M1), the first resistor (R1 to R4), and the second switching device (M2) are connected in series in the mentioned order and thus form a series connection,-- wherein a compensation device (20) is provided and configured so that, in the ON state of the first resistor (R1 to R4), a voltage is applied between the first and the second connection, so that the first connection is at a first potential, and the second connection is at a second potential, wherein the resistor (R1 to R4), in the OFF state, is kept at an intermediate potential which is between the first and the second potential, in particular is kept at least approximately at half the supply voltage, and/or-- wherein the control device is configured to drive the first resistor in a pulse width modulated manner, wherein the first and the second switching device are switched synchronously.
- The assembly according to claim 1,
characterized in that
the compensation device (20) comprises an in particular high-impedance second resistor (16), an in particular high-impedance third resistor (17), and a connecting line (18), wherein the second (16) and the third (17) resistor are connected in series to one another and in parallel with respect to the series connection of the first switching device (M1), the first resistor (R1 to R4), and the second switching device (M2), wherein the connecting line (18) connects a point between the second (16) and the third (17) resistor to a point between the two switching devices (M1, M2). - The assembly according to claim 2,
characterized in that
a resistance value of the second resistor (16) and a resistance value of the third resistor (17) differ by at most 10 %, in particular are substantially equal. - The assembly according to claim 1, 2 or 3,
characterized in that
the first (M1) and/or the second (M2) switching device comprise(s) a transistor, in particular a MOSFET or IGBT, preferably on the basis of silicon and/or silicon carbide and/or gallium arsenide. - The assembly according to any one of the preceding claims,
characterized in that
a control device (19) is provided which is configured to switch the first and the second switching devices (M1, M2) synchronously (simultaneously). - The assembly according to any one of the preceding claims,
characterized by
a supporting device, in particular comprising one or more capacitances, for example, in parallel to the second and/or third resistors for supporting a voltage corresponding to the intermediate potential, in particular a middle voltage. - The assembly according to any one of the preceding claims,
characterized by
a microcontroller and/or FPGA for controlling the circuit of the first and/or second switching device, in particular for re-sharpening the switching time of the first and second switching device. - The assembly according to any one of the preceding claims,
characterized by
a power supply (11), in particular a source of direct current. - The assembly according to any one of the preceding claims,
characterized in that
a temporal interval between a switch-on time of the first switching device and a switch-on time of the second switching device is less than 20 %, preferably less than 5 % of a switch-on period of the first switching device, and/or
a temporal interval between a switch-off time of the first switching device and a switch-off time of the second switching device is less than 20 %, preferably less than 5 % of a switch-on period of the first switching device. - A control method, in particular using the assembly according to any one of the preceding claims, for switching a heat-emitting first resistor (R1 to R4) having a first and a second connection, which is arranged in spatial proximity to an in particular grounded component which is at a potential without any direct relation to a driving voltage, in particular a housing (10) or chassis component, wherein the first resistor (R1 to R4) and the component form a capacitance (C1 to C5),- wherein, in an ON state of the first resistor, the first connection is at a first potential, and the second connection, in an ON state, is at a second potential, wherein the resistor (R1 to R4), in an OFF state, is kept at an intermediate potential which is between the first and the second potential, in particular is kept at least approximately at half the supply voltage, and/or- wherein the first resistor is driven in a pulse width modulated manner, wherein a first switching device (M1) assigned to the first connection, and a second switching device (M2) assigned to the second connection, are switched synchronously.
- The control method according to claim 10,
characterized in that
a temporal interval between a switch-on time of the first switching device and a switch-on time of the second switching device is less than 20 %, preferably less than 5 % of a switch-on period of the first switching device, and/or
a temporal interval between a switch-off time of the first switching device and a switch-off time of the second switching device is less than 20 %, preferably less than 5 % of a switch-on period of the first switching device. - An electrical heating system, in particular a layer heating system, comprising an assembly according to any one of claims 1 to 9 and/or configured to implement the control method for controlling an electrical resistor of the heating system according to any one of claims 10 or 11.
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DE102016108005.5A DE102016108005A1 (en) | 2016-04-29 | 2016-04-29 | Arrangement for switching a resistor |
PCT/EP2017/060297 WO2017186958A1 (en) | 2016-04-29 | 2017-04-28 | Assembly for switching a resistor |
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US8941956B2 (en) * | 2011-07-26 | 2015-01-27 | Railpower, Llc | Switching ground tether circuit |
DE102011081831A1 (en) | 2011-08-30 | 2013-02-28 | Webasto Ag | Electric heating unit, heating apparatus for a vehicle and method of manufacturing a heating unit |
US20130172964A1 (en) * | 2012-01-04 | 2013-07-04 | Gary N. Mills | Heating system for patient thermal management |
DE102012200570A1 (en) * | 2012-01-16 | 2013-07-18 | Webasto Ag | Electric heating |
DE102012209936A1 (en) | 2012-06-13 | 2013-12-19 | Webasto Ag | Electric heating device for a motor vehicle |
CN105228412B (en) * | 2015-08-24 | 2018-09-14 | 中磊电子(苏州)有限公司 | Heating device |
-
2016
- 2016-04-29 DE DE102016108005.5A patent/DE102016108005A1/en not_active Ceased
-
2017
- 2017-04-28 US US16/095,829 patent/US11665782B2/en active Active
- 2017-04-28 WO PCT/EP2017/060297 patent/WO2017186958A1/en active Application Filing
- 2017-04-28 KR KR1020187030978A patent/KR102145678B1/en active IP Right Grant
- 2017-04-28 EP EP17722409.4A patent/EP3449688B1/en active Active
- 2017-04-28 JP JP2018555223A patent/JP6820495B2/en active Active
- 2017-04-28 CN CN201780026512.7A patent/CN109076645B/en active Active
Non-Patent Citations (1)
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DE102016108005A1 (en) | 2017-11-02 |
US11665782B2 (en) | 2023-05-30 |
CN109076645A (en) | 2018-12-21 |
US20210227631A1 (en) | 2021-07-22 |
KR102145678B1 (en) | 2020-08-18 |
JP2019516224A (en) | 2019-06-13 |
CN109076645B (en) | 2021-04-23 |
JP6820495B2 (en) | 2021-01-27 |
EP3449688A1 (en) | 2019-03-06 |
WO2017186958A1 (en) | 2017-11-02 |
KR20180124124A (en) | 2018-11-20 |
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