EP3421981A1 - Dispositif de détection pour la mesure de l'humidité et de la température - Google Patents

Dispositif de détection pour la mesure de l'humidité et de la température Download PDF

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Publication number
EP3421981A1
EP3421981A1 EP18179701.0A EP18179701A EP3421981A1 EP 3421981 A1 EP3421981 A1 EP 3421981A1 EP 18179701 A EP18179701 A EP 18179701A EP 3421981 A1 EP3421981 A1 EP 3421981A1
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EP
European Patent Office
Prior art keywords
sensor device
base electrode
carrier substrate
semiconductor carrier
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP18179701.0A
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German (de)
English (en)
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EP3421981B1 (fr
Inventor
Albin Haider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
E&E Elektronik GmbH
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E&E Elektronik GmbH
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Publication of EP3421981A1 publication Critical patent/EP3421981A1/fr
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G01K7/183—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer characterised by the use of the resistive element

Definitions

  • the present invention relates to a sensor device for measuring humidity and temperature.
  • sensor devices which consist of a carrier substrate on which thin-film or thick-film technology applied sensor components are arranged.
  • the example in the US 4,277,742 disclosed sensor device has a carrier substrate made of an electrically conductive semiconductor material, on which a capacitive humidity sensor is arranged.
  • the capacitive humidity sensor consists of a base electrode, a moisture-permeable cover electrode and a moisture-sensitive dielectric disposed between the electrodes.
  • Humidity sensor is in the US 4,277,742
  • a temperature sensor in the form of a planar conductor track is provided on the semiconductor carrier substrate.
  • a disadvantage of the proposed sensor device in addition to the large footprint for the humidity and temperature sensor in particular that a relatively complex layer structure is provided with a corresponding number of process steps in the production. Furthermore, a bonding method is required for electrical contacting of the sensor device, which also requires a certain manufacturing effort.
  • the present invention has for its object to provide a sensor device for measuring humidity and temperature, which provides a still sufficient accuracy of measurement with the lowest possible manufacturing costs.
  • the sensor device for measuring humidity and temperature consists of an electrically conductive semiconductor carrier substrate on which a capacitive humidity sensor is arranged which comprises a base electrode, a moisture-impermeable cover electrode and a moisture-sensitive dielectric arranged between the base and cover electrodes.
  • the base electrode consists of a material with a defined temperature-dependent resistance characteristic and is furthermore part of a temperature measurement circuit arrangement.
  • the base electrode is furthermore part of a reference capacitance for evaluating the humidity sensor.
  • a passivation layer, on which the base electrode is applied is arranged on the semiconductor carrier substrate.
  • the passivation layer may be formed from silicon dioxide and / or silicon oxynitride.
  • the reference capacitance comprises the base electrode, the semiconductor carrier substrate and the passivation layer.
  • the base electrode is designed as a meandering, bifilar, metallic conductor track.
  • a contacting connection for the cover electrode, two contacting connections for the base electrode and a contacting connection for the semiconductor carrier substrate are arranged on the semiconductor substrate.
  • the contacting terminals can each be designed to be planar.
  • the temperature measurement circuit arrangement is set up to also function as a moisture measurement circuit arrangement for evaluating the capacitive humidity sensor.
  • the further components of the temperature measurement circuit arrangement can be arranged spatially remote from the semiconductor carrier substrate.
  • the semiconductor carrier substrate is formed of doped silicon.
  • the sensor device according to the invention can be manufactured in only a few process steps due to the simple structure, i. This results in particularly low production costs. This also contributes to the fact that the sensor device according to the invention is designed as a passive system without integrated signal processing components and therefore a low-cost semiconductor carrier substrate can be used.
  • the sensor device according to the invention can be further processed without the required packaging or housing.
  • FIGS. 2a, 2b and 3 Before using the FIGS. 2a, 2b and 3 a concrete embodiment of the sensor device according to the invention is explained, be previously with reference to the FIGS. 1a and 1b the basic structure of the present invention is described.
  • the sensor device comprises an electrically conductive semiconductor carrier substrate 1, on which certain sensor components for measuring humidity and temperature of a surrounding medium are arranged in the manner described below.
  • Doped silicon is preferably provided as the conductive semiconductor carrier substrate 1.
  • a corresponding silicon wafer can be provided, from which a multiplicity of sensor devices according to the invention can then be inexpensively manufactured in multiple use.
  • a cost-effective 8 "wafer can be used as a suitable silicon wafer, which is not preprocessed via further semiconductor manufacturing processes, in order to integrate further active electronic components in.
  • no preceding structured doping of the silicon wafer is required
  • an electrically insulating passivation layer 2 is arranged on the semiconductor substrate 1, for example, consisting of silicon dioxide SiO2 and / or silicon oxynitride SiON.
  • the further layers or layers are then arranged, which form the required sensor components for moisture and temperature measurement.
  • a capacitive humidity sensor which comprises a base electrode 3, a moisture-permeable cover electrode 5 and a arranged between the base and cover electrode 3, 5, moisture-sensitive dielectric 4.
  • the base electrode 3 which consists of an electrically conductive material such as platinum, applied to the passivation layer 2.
  • the base electrode 3 arranged dielectric 4, for example, a polymer such as polyimide can be used, whose capacity changes in a defined manner depending on moisture.
  • the moisture-permeable cover electrode 5 is formed flat in the present embodiment and also consists of an electrically conductive material such as chromium.
  • the moisture permeability of the cover electrode 5 can be ensured by a suitable porous or cracked structure derselbigen; Through this structure, the surrounding medium, whose moisture content is to be measured, comes into contact with the moisture-sensitive dielectric 4.
  • a suitable porous or cracked structure derselbigen
  • the surrounding medium whose moisture content is to be measured, comes into contact with the moisture-sensitive dielectric 4.
  • cracked cover electrode can also be provided to form the cover electrode structured in the form of meander-shaped tracks and to form holes in the tracks.
  • the base electrode 3 not only as part of the capacitive humidity sensor, but at least also for temperature measurement, for which the base electrode 3 is also part of a suitable temperature measurement circuit or measuring circuit.
  • a material for the base electrode 3 is provided, which has a defined temperature-dependent resistance characteristic and thus can act as a temperature sensor; Suitable for this purpose, as already mentioned above, is platinum.
  • FIG. 1a or in the associated, greatly simplified electrical equivalent circuit diagram of FIG. 1b the temperature-dependent measuring resistor designed for measuring the temperature via the base electrode 3 is denoted by RT; the associated contacting terminals, via which this or the base electrode 3 is connected to the - not shown in these figures - temperature measurement circuitry are designated GE1, GE2.
  • the moisture-dependent measuring capacitance C_RH of the moisture-sensitive dielectric 4 and the associated contacting terminal DE1 of the cover electrode 5 are shown.
  • the base electrode 3 is not only a component of the capacitive humidity sensor and a temperature measurement circuit, but also still part of a reference capacitance C_REF, which is used to evaluate the capacitive humidity sensor.
  • the corresponding reference capacitance C_REF comprises, in addition to the base electrode 3, the passivation layer 2 functioning as a dielectric of the reference capacitance C_REF and the semiconductor carrier substrate 1 as a further electrode FIG. 1b In this case, the contacting terminal is designated for the reference capacitance C_REF.
  • the base electrode used for temperature measurement also forms capacitances for the humidity sensor or reference capacitance, etc.
  • the inventively provided multiple use of the base electrode 3 simplifies the production of the corresponding sensor device considerably, since significantly fewer process steps for applying functionally relevant layers are required as compared to each sensor component would have to be individually or separately processed on the semiconductor carrier substrate.
  • the manufacturing cost of the sensor device according to the invention can thus be significantly reduced.
  • FIG. 2a shows a plan view of the sensor device 10 in the ground electrode plane
  • FIG. 2b Section views of the sensor device 10 along the in FIG. 2a A and B directions.
  • the sectional view along the transverse direction A is shown, in the right part of the sectional view along the longitudinal direction B.
  • FIG. 3 a circuit arrangement is shown which is suitable both for the evaluation of the measuring capacitance of the capacitive humidity sensor and for the evaluation of the measuring resistor for temperature measurement.
  • Typical dimensions of the semiconductor carrier substrate 11 are in the range 3.2 mm (length) x 1.6 mm (width) x 0.725 mm (thickness). In the case of using an 8 "wafer, up to 5000 sensor devices according to the invention can thus be manufactured from such a wafer.
  • the base electrode 13 used in accordance with the invention both for the measurement of moisture and for the temperature measurement in the sensor device 10 is in the embodiment shown as in particular FIG. 2a can be seen as a meandering bifilar metallic conductor track formed, wherein the conductor tracks have the smallest possible distance from each other.
  • a particularly low total inductance can be ensured.
  • As a base electrode material with a defined temperature-dependent resistance characteristic, for example, platinum is provided.
  • the base electrode 13 further functions as an electrode of a reference capacitance formed by the base electrode 13, the passivation layer 12, and the semiconductor substrate 11 in this embodiment.
  • the dielectric 14 of the capacitive humidity sensor for example polyimide, is arranged in a planar manner, above this again the moisture-impermeable cover electrode 15 of the capacitive humidity sensor.
  • the contacting terminal 10.6 of the cover electrode 15 is arranged on the passivation layer 12 in the form of an electrically conductive, planar contacting region, for example made of nickel-chromium and gold or a chromium adhesive layer and an overlying gold layer, as well as the correspondingly formed contacting terminals 10.4, 10.5 of the base electrode 13.
  • the contacting terminal 10.7 for the reference capacitance is provided in a recess of the passivation layer 12 to the semiconductor carrier substrate 11, which is also coated electrically conductive.
  • Such a design of the sensor device according to the invention allows further processing without additional housing or packaging. It is for example possible to further process the sensor device via flip-chip method by automatically placing it directly over a recess on a circuit board or printed circuit board, contacting it with the aid of solder paste and making electrical contact via the contacting connections. About an underfiller, the contacting terminals of the sensor device can be fixed on the board and protected from mechanical damage.
  • FIG. 3 Based on FIG. 3 a suitable circuit arrangement is explained below, which can be used for the evaluation of the sensor device 10 according to the invention, as they are approximately in the embodiment of FIGS. 2a, 2b was explained.
  • the components of the corresponding circuit arrangement are preferably not integrated in the semiconductor carrier substrate of the preferably passively formed system, but are arranged spatially remote therefrom, for example in suitable subsequent electronics or the like.
  • the circuit arrangement shown here can function both as a temperature measurement circuit arrangement and as a moisture measurement circuit arrangement in conjunction with the sensor device 10 according to the invention. Consequently, the same hardware can be used to evaluate the capacitive humidity sensor and to evaluate the temperature sensor of the sensor device 10 according to the invention.
  • the reference numeral 10.1 is in FIG. 3
  • the moisture-dependent measuring capacity of the sensor device 10 is denoted by the reference numeral 10.2 the reference capacitance and by the reference numeral 10.3 of the measuring resistor for temperature measurement.
  • the illustrated circuit arrangement also comprises resistors 26, 27, a reference resistor 25 and a capacitive charge storage element 22.
  • Reference numerals 10.4-10.7 denote in FIG FIG. 3 the contacting terminals of the sensor device 10 as shown in FIG FIGS. 2a, 2b explained.
  • a corresponding evaluation of a capacitive humidity sensor to which, among other things, a known reference capacitance 10.2 is used in addition to the moisture-dependent measuring capacitance 10.1, is known from US Pat EP 1 574 847 A2 the applicant already known.
  • the moisture-dependent measuring capacitance 10.1 to be determined is determined with the aid of the reference capacitance 10.2, the charge storage element 22, a plurality of switching elements and a control unit 20 in the form of a microprocessor.
  • a plurality of switching inputs and outputs or ports 20.1 to 20.5 of the control unit 20, which are defined as switching elements, function to determine the measuring capacitance 10.1.
  • the measuring capacitance 10.1 is charged and discharged several times and the charge storage element 22 is charged in parallel thereto. until it is charged to a certain reference value. From the determination of the number of required for this Charging processes or the time to reach the reference value, the measuring capacity 10.1 and thus a measured value proportional to the humidity is determined. With regard to further details for the evaluation of a capacitive humidity sensor by means of such a method is expressly to EP 1 574 847 B1 directed.
  • the same circuit arrangement can now also be used to evaluate the temperature sensor 10.3, which is formed in the circuit arrangement according to the invention via the base electrode 13.
  • a procedure extending over several measuring phases is provided, which is explained below by way of example.
  • a discharge of the various capacitances in the circuit arrangement is undertaken, namely a discharging of the charge storage element 22 as well as the measurement capacitance 10.1 and the reference capacitance 10.2.
  • the ports 20.1 - 20.5 of the control unit 20 are switched so that charging of the charge storage element 22 can take place.
  • the hardware-identical circuit arrangement can thus be used both for evaluating the capacitive humidity sensor and for evaluating the resistive temperature sensor.
  • the expenditure-side expenditure for the sensor device 10 according to the invention can thus be considerably minimized.
  • the meander-shaped conductor tracks of the base electrode not bifilarly, but only from a single meander-shaped conductor track.

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
EP18179701.0A 2017-06-28 2018-06-26 Dispositif de détection pour la mesure de l'humidité et de la température Active EP3421981B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102017210874 2017-06-28

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EP3421981A1 true EP3421981A1 (fr) 2019-01-02
EP3421981B1 EP3421981B1 (fr) 2021-04-14

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EP18710318.9A Pending EP3646016A1 (fr) 2017-06-28 2018-02-05 Dispositif de détection
EP18179701.0A Active EP3421981B1 (fr) 2017-06-28 2018-06-26 Dispositif de détection pour la mesure de l'humidité et de la température

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EP18710318.9A Pending EP3646016A1 (fr) 2017-06-28 2018-02-05 Dispositif de détection

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DE (1) DE102018210343A1 (fr)
WO (1) WO2019001776A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3767285A4 (fr) * 2018-07-04 2021-12-01 Murata Manufacturing Co., Ltd. Capteur de composé

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115825171A (zh) * 2021-09-17 2023-03-21 无锡华润上华科技有限公司 双电容湿度传感器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277742A (en) 1977-01-31 1981-07-07 Panametrics, Inc. Absolute humidity sensors and methods of manufacturing humidity sensors
US4319485A (en) * 1978-12-28 1982-03-16 Matsushita Electric Industrial Co., Ltd. Temperature·humidity detecting apparatus
EP1574847A2 (fr) 2004-02-06 2005-09-14 E+E Elektronik Ges. Mbh Circuit pour la mesure capacitive de l'humidité et méthode pour son utilisation.
US20130139587A1 (en) * 2011-12-02 2013-06-06 Stmicroelectronics Pte Ltd. Tunable humidity sensor with integrated heater
EP2718706A1 (fr) * 2011-06-08 2014-04-16 3M Innovative Properties Company Capteur d'humidité et élément de détection associé
US20160161435A1 (en) * 2013-08-13 2016-06-09 Murata Manufacturing Co., Ltd. Temperature and humidity sensor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT3295U1 (de) * 1998-11-06 1999-12-27 E & E Elektronik Gmbh Anordnung zur feuchtemessung
JP4609173B2 (ja) 2005-04-22 2011-01-12 株式会社デンソー 容量式湿度センサおよびその製造方法
WO2010113711A1 (fr) * 2009-03-31 2010-10-07 アルプス電気株式会社 Capteur d'humidité capacitif et son procédé de production
DE102011086479A1 (de) * 2011-11-16 2013-05-16 Robert Bosch Gmbh Integrierter Feuchtesensor und Verfahren zu dessen Herstellung

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277742A (en) 1977-01-31 1981-07-07 Panametrics, Inc. Absolute humidity sensors and methods of manufacturing humidity sensors
US4319485A (en) * 1978-12-28 1982-03-16 Matsushita Electric Industrial Co., Ltd. Temperature·humidity detecting apparatus
EP1574847A2 (fr) 2004-02-06 2005-09-14 E+E Elektronik Ges. Mbh Circuit pour la mesure capacitive de l'humidité et méthode pour son utilisation.
EP1574847B1 (fr) 2004-02-06 2008-06-18 E+E Elektronik Ges. Mbh Circuit pour la mesure capacitive de l'humidité et méthode pour son utilisation.
EP2718706A1 (fr) * 2011-06-08 2014-04-16 3M Innovative Properties Company Capteur d'humidité et élément de détection associé
US20130139587A1 (en) * 2011-12-02 2013-06-06 Stmicroelectronics Pte Ltd. Tunable humidity sensor with integrated heater
US20160161435A1 (en) * 2013-08-13 2016-06-09 Murata Manufacturing Co., Ltd. Temperature and humidity sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3767285A4 (fr) * 2018-07-04 2021-12-01 Murata Manufacturing Co., Ltd. Capteur de composé

Also Published As

Publication number Publication date
EP3646016A1 (fr) 2020-05-06
EP3421981B1 (fr) 2021-04-14
DE102018210343A1 (de) 2019-01-03
WO2019001776A1 (fr) 2019-01-03

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