EP3398410B1 - Optoelectronic circuit comprising light emitting diodes - Google Patents

Optoelectronic circuit comprising light emitting diodes Download PDF

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Publication number
EP3398410B1
EP3398410B1 EP16829297.7A EP16829297A EP3398410B1 EP 3398410 B1 EP3398410 B1 EP 3398410B1 EP 16829297 A EP16829297 A EP 16829297A EP 3398410 B1 EP3398410 B1 EP 3398410B1
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EP
European Patent Office
Prior art keywords
circuit
module
light
elementary electronic
terminal
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EP16829297.7A
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German (de)
French (fr)
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EP3398410A1 (en
Inventor
Frédéric MERCIER
Xavier Hugon
Philippe Gilet
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Aledia
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Aledia
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40Details of LED load circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10Controlling the intensity of the light
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40Details of LED load circuits
    • H05B45/44Details of LED load circuits with an active control inside an LED matrix
    • H05B45/48Details of LED load circuits with an active control inside an LED matrix having LEDs organised in strings and incorporating parallel shunting devices
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10Controlling the light source
    • H05B47/155Coordinated control of two or more light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10Controlling the light source
    • H05B47/175Controlling the light source by remote control
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10Controlling the intensity of the light
    • H05B45/12Controlling the intensity of the light using optical feedback

Definitions

  • the present description relates to an optoelectronic circuit, in particular an optoelectronic circuit comprising light emitting diodes.
  • An example relates to the supply of an optoelectronic circuit comprising light-emitting diodes with an alternating voltage, in particular a sinusoidal voltage, for example the voltage of the mains.
  • the figure 1 represents an example of an optoelectronic circuit 10 comprising input terminals IN 1 and IN 2 between which an alternating voltage V IN is applied.
  • the optoelectronic circuit 10 further comprises a rectifier circuit 12 comprising a diode bridge 14, receiving the voltage V IN and supplying a rectified voltage V ALIM which supplies N sets in series of elementary light-emitting diodes, called global light-emitting diodes D i , where i is an integer varying from 1 to N.
  • the optoelectronic circuit 10 comprises a current source 22, one terminal of which is connected to node A 2 and the other terminal of which is connected to a node A 3 .
  • Circuit 10 comprises a device 24 for switching the overall light-emitting diodes D i , i varying from 1 to N.
  • the switching device 24 makes it possible to gradually increase the number of overall light-emitting diodes receiving the supply voltage V ALIM during an increasing phase of the supply voltage V ALIM and of progressively reducing the number of overall light-emitting diodes receiving the supply voltage V ALIM during a decreasing phase of the supply voltage V ALIM . This makes it possible to reduce the period during which no light is emitted by the optoelectronic circuit 10.
  • the device 24 comprises N controllable switches SW 1 to SW N.
  • Each switch SW i , i varying from 1 to N, is mounted between node A 3 and the cathode of the overall light-emitting diode D i and is controlled by a control module 26 as a function of signals supplied by a sensor 28.
  • the order of closing and opening of the switches SW i is fixed by the structure of the optoelectronic circuit 10 and is repeated for each cycle of the supply voltage V ALIM .
  • the figure 2 is a timing diagram of the supply voltage V ALIM in the case where the alternating voltage V IN corresponds to a sinusoidal voltage and for an example in which the optoelectronic circuit 10 comprises four global light-emitting diodes D 1 , D 2 , D 3 and D 4 .
  • Phase P 1 represents the conduction phase of the overall light-emitting diode D 1 .
  • Phase P 2 represents the conduction phase of the overall light-emitting diode D 2 .
  • Phase P 3 represents the conduction phase of the overall light-emitting diode D 3 .
  • Phase P 4 represents the conduction phase of the overall light-emitting diode D 4 .
  • a drawback of optoelectronic circuit 10 is that the duration of light emission is not the same for each overall light emitting diode. Therefore, the life of the overall light emitting diode which emits light most often may be less than the life of the overall light emitting diode which emits light least often. Furthermore, depending on the configuration of the optoelectronic circuit 10, an observer can perceive an inhomogeneity of the light power emitted by the optoelectronic circuit 10.
  • the figure 3 shows, partially and schematically, a top view of the optoelectronic circuit 10 comprising a zone 30 in which the overall light-emitting diodes D 1 to D 4 are made and a zone 32 in which the other elements of the optoelectronic circuit 10 are made.
  • the overall light-emitting diodes D 1 to D 4 are substantially aligned and arranged next to each other.
  • an observer can perceive, in particular when the overall light-emitting diodes are spaced apart, a light power emitted by the zone 30 of the optoelectronic circuit 10 which is greater on the side of the overall light-emitting diode D 1 , of which the duration of light emission is greater than on the side of the overall light-emitting diode D 4 , whose light emission duration is the smallest.
  • An object of an embodiment is to overcome all or part of the drawbacks of the optoelectronic circuits described above comprising overall light-emitting diodes and a device for switching light-emitting diodes.
  • Another object of an embodiment is to improve the homogeneity of light emission by the optoelectronic circuit.
  • Another object of an embodiment is to increase the life of the overall light emitting diode which emits the light the longest.
  • Another object of an embodiment is to reduce the bulk of the optoelectronic circuit.
  • Another object of an embodiment is that the number of overall light emitting diodes of the optoelectronic circuit can be changed in a simple manner.
  • Another object of an embodiment is that the order of activation of the overall light emitting diodes can be changed in a simple manner.
  • one embodiment provides an optoelectronic circuit according to claim 1.
  • the integrated circuit chip of each elementary electronic circuit further comprises a communication circuit containing a modulation circuit suitable for supplying a first modulated signal and a demodulation circuit. adapted to supply a second signal by demodulation of the first signal, the control circuit of the light-emitting diode being adapted to activate or inhibit the light-emitting diode from the second signal.
  • each elementary electronic circuit comprises a control circuit suitable for supplying an activation or deactivation signal to the other elementary electronic circuits.
  • the optoelectronic circuit is intended to receive a variable voltage.
  • the control circuit of the light-emitting diode is adapted to activate or inhibit the light-emitting diode according to the activation or deactivation signal, from which it follows that the number of activated light-emitting diodes depends on the value of variable voltage.
  • each elementary electronic circuit comprises a current source connected to the light-emitting diode.
  • the integrated circuit chip of each elementary electronic circuit further comprises a circuit for detecting a master or slave state of the elementary electronic circuit when the elementary electronic circuit is in operation.
  • the optoelectronic circuit comprises several elementary electronic circuits connected in series.
  • At least one of the elementary electronic circuits is suitable for transmitting data to other elementary electronic circuits, called slave circuits, so that the light-emitting diodes are activated randomly or according to a given succession.
  • each elementary electronic circuit further comprises a first terminal.
  • the optoelectronic circuit comprises a sensor connected to the first terminal of one of the elementary electronic circuits, and the intensity of the current supplied by the current source of the master circuit depends on a third signal supplied by the sensor.
  • the optoelectronic circuit comprises several elementary electronic circuits connected in parallel.
  • the first signal corresponds to a modulation of the supply current of the light-emitting diode.
  • each elementary electronic circuit further comprises a second terminal.
  • the second signal corresponds to a modulated current supplied by the modulation circuit to the second terminal which is different from the supply current of the light-emitting diode, or the second signal corresponds to the potential at said terminal.
  • the optoelectronic circuit further comprises a third terminal, the demodulation circuit being adapted to receive the second signal via the third terminal.
  • the third terminal of each elementary electronic circuit is connected to a conductive line via a capacitor.
  • each elementary electronic circuit further comprises a fourth terminal and a copying circuit connecting the third terminal and the fourth terminal and adapted to supply the demodulation circuit with a copy of the current flowing between the third and fourth terminals.
  • the elementary electronic circuits are connected in series according to a succession of elementary electronic circuits.
  • the fourth terminal of the elementary electronic circuit is connected to the third terminal of the preceding elementary electronic circuit of the succession.
  • each elementary electronic circuit comprises less than five light-emitting diodes.
  • the same elements have been designated by the same references in the various figures and, moreover, the various figures are not drawn to scale.
  • the terms “substantially”, “approximately” and “of the order of” mean “to within 10%”.
  • the term “binary signal” is used to mean a signal which alternates between a first constant state, for example a low state, denoted "0", and a second constant state, for example a high state, denoted "1".
  • the high and low states of different binary signals of the same electronic circuit can be different.
  • the binary signals may correspond to voltages or currents which may not be perfectly constant in the high or low state.
  • connection is used to denote a direct electrical connection, without an intermediate electronic component, for example by means of a conductive track, and the term “coupled” or the term “connected”, to denote either a direct electrical connection (meaning then "connected") or a connection via one or more intermediate components (resistance, capacitor, etc.).
  • the optoelectronic circuit has a modular structure and comprises several modules, also called elementary electronic circuits, connected to each other.
  • the modules are not connected to a common node connected to a source of a low reference potential, for example the ground of the optoelectronic circuit.
  • each module is connected only to one or two other modules and has a floating mass.
  • Each module includes a diode overall electroluminescent and electronic circuit.
  • the overall light-emitting diode corresponds to a first integrated circuit chip and the electronic circuit corresponds to a second integrated circuit chip, the first and second chips being mounted on a printed circuit or integrated in the same package.
  • the modules all have the same structure. This advantageously makes it possible to easily add a module to the optoelectronic circuit or to easily remove a module from the optoelectronic circuit.
  • the electronic circuit comprises a control circuit for the overall light-emitting diode, for example an activation / inhibition circuit for the overall light-emitting diode.
  • the electronic circuits of the modules make it possible to activate or inhibit the overall light-emitting diodes as a function of the value of the supply voltage of the optoelectronic circuit according to a selection sequence.
  • the electronic circuits of the modules are adapted to communicate with each other, for example for the transmission of the selection sequence of the light-emitting diodes as a function of the supply voltage.
  • the modules can be connected to each other so that the overall light emitting diodes can be connected in series and / or in parallel.
  • the number of light-emitting diodes which are activated varies automatically as a function of the value of the supply voltage.
  • the sequence for selecting the light-emitting diodes as a function of the supply voltage is a random or pseudo-random sequence.
  • the optoelectronic circuit comprises at least one set of several modules mounted in series, the diode selection sequence
  • the overall electroluminescent of the modules of this set is controlled by only one of the modules of this set, called the master module, the other modules of this set being called slave modules.
  • each module is capable of being a master module or a slave module and the configuration of each module as a master module or as a slave module is obtained automatically, for example by the way in which the module is connected to the other modules in the optoelectronic circuit.
  • each module comprises a current source for supplying the light-emitting diode of the module.
  • a current source for supplying the light-emitting diode of the module.
  • only the current source of the master module is activated.
  • control circuit is adapted to modify the intensity of the current supplied by the current source, for example from a setpoint received by the module.
  • the optoelectronic circuit comprises several modules emitting lights of different colors, one of these modules being suitable for controlling the other modules for controlling the overall color emitted by all the modules.
  • the circuits of the module 40 can correspond in whole or in part to dedicated circuits. However, at least some of these circuits may include a processor adapted to execute a computer program stored in a memory.
  • Terminal Vdd is intended to be connected to a source of high potential and terminal Gnd is intended to be connected to a source of low potential.
  • Each module 40 has a local ground insofar as the potentials in a module 40 are referenced with respect to the potential at the terminal Gnd of this module 40.
  • the electrical connections between the circuit 50 and the other circuits of the module 40 are not not shown.
  • the connections between the circuits of the module 40 and the terminals Vdd and Gnd are not shown.
  • each module 40 comprises at least one capacitor which is charged each time the global light-emitting diode D is on and the circuit 50 (Bandgap & supplies) supplies the supply voltages / currents of the various circuits of the module. 40 from the energy stored in the capacitor. The Vdd terminal may then not be present.
  • the overall light-emitting diode D comprises at least one elementary light-emitting diode and is preferably made up of the placing in series and / or in parallel of at least two elementary light-emitting diodes.
  • Each module 40 may correspond to a single integrated circuit chip or comprise two integrated circuit chips or more than two integrated circuit chips. Each module 40 corresponds to a separate elementary electronic circuit and all the components of the module 40 are contained in the same housing. In in particular, the overall light-emitting diode D and the integrated circuit chip or the integrated circuit chips comprising the circuits 44, 46, 48 and 50 are contained in the same package.
  • the control circuit 44 comprises a circuit 51 (System Control Unit) for controlling the module 40, referred to below as a selection circuit.
  • the selection circuit 51 is adapted to select the “master” or “slave” state of the module 40 and to supply a signal S3 to the control circuit 46 representative of the fact that the module 40 operates as a master module or as a slave module. .
  • the selection circuit 51 is adapted to determine whether the current source 42 of module 40 is in operation. When the current source 42 is in operation, the selection circuit 51 provides for example a signal S3 at "1", which means that the module 40 operates as a master module.
  • the selection circuit 51 When the current source 42 is not in operation, the selection circuit 51 provides for example a signal S3 at "0", which means that the module 40 operates as a slave module.
  • the optoelectronic circuit 10 comprises a voltage sensor 52 (Vsense) connected to the selection circuit 51 and adapted to measure the potential at the terminal CS.
  • the selection circuit 51 is suitable for controlling the intensity I CS of the current supplied by the current source 42.
  • the selection circuit 51 is suitable for providing a current setpoint. current I CS to a current control circuit 53 (Current Control) which converts the setpoint into a control signal for the current source 52.
  • Current Control Current Control
  • Each module 40 can furthermore comprise the terminal S which is connected to the selection circuit 51.
  • a circuit external to the modules 40 for example a sensor, not shown in figure 4 , can be connected to terminal S.
  • the setpoint of current I CS supplied by circuit 51 may depend on the signal received by circuit 51 by terminal S.
  • the selection circuit 51 receives a measurement signal S4 supplied by a sensor 54 (Vsense).
  • the sensor 54 is a voltage sensor adapted to measure the voltage at the cathode of the overall light-emitting diode D.
  • the selection circuit 51 is adapted to supply the signal S1 which is representative of the light-emitting diodes of the optoelectronic circuit. to activate / deactivate.
  • the communication circuit 48 comprises a modulation circuit 58 (Modulation Unit) receiving the signal S1 supplied by the control circuit 44 and a demodulation circuit 60 (Demodulation Unit) supplying the signal S2 to the control circuit 46.
  • the modulation circuits 58 and demodulation 60 implement modulation / demodulation steps so that the signal S2 is, like the signal S1, representative of the light-emitting diodes of the optoelectronic circuit to be activated / inhibited.
  • the control circuit 46 comprises a control circuit 62 (Switch Control) receiving the signal S2 and the signal S3 and supplying a control signal S5 to a switch 64 mounted at the terminals of the overall light-emitting diode D.
  • the signal S5 is a binary signal and the switch 64 is open when the signal S5 is in a first state, for example the low state, and the switch 64 is closed when the signal S5 is in a second state, for example high state.
  • Each switch 64 is, for example, a switch based on at least one transistor, in particular a field effect transistor with a metal-oxide gate or MOS transistor, with enrichment (normally closed) or depletion (normally open).
  • each switch 64 corresponds to a MOS transistor, for example N-channel transistor, the drain of which is connected to the anode of the overall light-emitting diode D, the source of which is connected to the cathode of the global light-emitting diode D and the gate of which receives the signal S5.
  • MOS transistor for example N-channel transistor
  • the modulation / demodulation step implemented by the communication circuit 48 comprises the modulation of the current I CS supplied by the current source 42.
  • the modulation circuit 58 is then adapted to control the source. current 42 to modulate the current I CS supplied by the current source 42.
  • the communication circuit 48 further comprises a circuit 66 for detecting the modulation of the current I CS comprising a diode 68 connected in series between the terminal A and the anode of the global light-emitting diode D and a sensor 70 of the voltage across the terminals of the diode 68, supplying a signal S6 to the demodulation circuit 60.
  • the figure 5 represents an embodiment of an optoelectronic circuit 80 comprising N modules 40 such as represented in figure 4 , where N is an integer between 2 and 200, three modules 40 being represented by way of example in figure 5 .
  • the modules 40 correspond to distinct elementary circuits.
  • the housings of the modules 40 are distinct.
  • the optoelectronic circuit 80 comprises a succession of modules 40 mounted in series between a node A 1 and a node A 2 , the module at the first position of the succession being that connected to node A 1 and the module at the last position of the succession being that connected to node A 2 .
  • a supply voltage V ALIM is applied between the nodes A 1 and A 2 .
  • the supply voltage V ALIM can correspond to the oscillating voltage supplied by a rectifier circuit.
  • the supply voltage can be a direct voltage, for example a substantially constant voltage.
  • terminal Vdd is connected to node A 1 by a resistor 82 which may be identical or different depending on the modules 40.
  • the value of each resistor 82 is chosen so that, for each module 40, the potential at the terminal Vdd is within a range of values suitable for correct operation of the circuit 50 for supplying the supply voltages / currents of the components of the module 40.
  • the modules 40 are connected to each other so that there is only one master module, shown by way of example in the last position in figure 5 .
  • the operation of the optoelectronic circuit 80 is as follows.
  • the selection circuit 51 of each module 40 determines whether the CS terminal is left floating. If this is the case, the selection circuit 51 transmits an inhibition signal S3 to the control circuit. command 46 and the module considered operates as a slave module.
  • the selection circuit 51 transmits an activation signal S3 to the control circuit 46 and the module considered operates as a master module.
  • the detection of whether the CS terminal is floating or not can be performed by comparing the potential at the CS terminal and the potential at the Gnd terminal. If the potentials are equal, this means that the CS terminal is not floating and if the potentials are different, this means that the CS terminal is left floating.
  • the control circuit 44 of the master module controls the modulation circuit 58 to transmit data by modulating the current I CS .
  • the modulation of the current I CS can be a modulation of any type, for example an amplitude modulation and / or a frequency modulation.
  • the modulation circuit 58 of each slave module remains inactive.
  • the demodulation circuit 60 of each module is suitable for receiving the data transmitted by demodulation of the current I CS and the driving circuit 62 is suitable for controlling the opening or closing of the switch 64 as a function of the data received.
  • the data supplied by the master module and transmitted to each slave module by modulation of the current I CS can be representative of an order of activation of the overall light-emitting diodes during the evolution of the voltage of supply V ALIM , for example during each cycle of voltage V ALIM in the case of a voltage V ALIM varying periodically.
  • This activation order can be modified over time so that the order of activation of the overall light-emitting diodes is not always the same for each cycle of the supply voltage V ALIM .
  • the order of activation of the global light-emitting diodes can be random.
  • each module is associated with a unique identifier and the data supplied by the master module include in particular a succession of identifiers.
  • the list of identifiers can be stored in a memory of the control circuit 46.
  • a slave module receives the identifier associated with it, it changes the state of the switch 64, to open to closed or closed to open.
  • FIGS. 6 and 7 are figures analogous to figures 4 and 5 respectively of another embodiment of a module 90 and of an optoelectronic circuit 95 comprising several examples of the module 90.
  • the elements common between the module 40 and the module 90 are designated by the same references.
  • the module 90 comprises all the elements of the module 40 with the difference that there is no modulation of the current I CS by the modulation circuit 58 and that the modulation circuit 58 is adapted to supply a modulated current I mod to an I_ctrl terminal.
  • the module 90 further comprises two terminals I_ctrl_in and I_ctrl_out and the communication circuit 48 comprises a copy circuit 96 connected to the terminals I_ctrl_in and I_ctrl_out and linked to the demodulation circuit 60 and adapted to supply a copy of the current flowing between the terminals I_ctrl_in and I_ctrl_out to demodulation circuit 60.
  • the transmission of data between the master module and the slave modules is carried out by a modulation of the current I mod which is transmitted on a conductive line dedicated by the master module to the slave modules.
  • the connection of the terminals A, K, Vdd and Gnd of each module 90 is identical to what has been described previously for the module 40 in relation to the figure 5 with the difference that the master module is preferably placed in the last position, that is to say connected to node A 2 .
  • the I_ctrl terminal of the master module is connected to the I_ctrl_in terminal of the master module and the I_ctrl_out of the master module is connected to the I_ctrl_in terminal of the preceding slave module in the succession of modules.
  • the I_ctrl terminal is not used. She is left floating or fixed at a neutral potential adequate for the operation of the circuit.
  • the I_ctrl_in terminal is connected to the I_ctrl_out terminal of the next module in the succession of modules and the I_ctrl_out terminal is connected to the I_ctrl_in terminal of the previous module in the succession of modules, with the exception of the slave module in the first position whose terminal I_ctrl_out is connected to node A 1 or Vdd via a resistor.
  • the operation of the optoelectronic circuit 95 is as follows.
  • the role of master module or slave module is determined as described above for optoelectronic circuit 80.
  • modulation circuit 58 of the master module under the control of selection circuit 51, modulates current I mod to transmit data by modulating the current I mod .
  • the modulation of the current I mod can be of any type, for example an amplitude modulation and / or a frequency modulation.
  • the modulation circuit 58 of each slave module remains inactive.
  • the current I mod flows from module to module by passing through the feedback circuit 96 of each module 90.
  • the feedback circuit 96 of each module 90 supplies a copy of the current I mod to the demodulation circuit 60.
  • the demodulation circuit 60 of each module is suitable for receiving the data transmitted by demodulation of the current I mod and the control circuit 62 is suitable for controlling the opening or closing of the switch 64 as a function of the data received.
  • An advantage of the present embodiment is that the modulation of the current I mod by the modulation circuit 58 of the master module can be implemented more simply than the modulation of the current I CS in the embodiment described above in relation to the figures 4 and 5 . Indeed, the impedance seen by the current source 42, due to the overall light-emitting diodes of all the modules is higher than the impedance seen by the modulation circuit 58 due to the feedback circuits 96. In addition, the modulation does not affect the light emitted.
  • the figures 8 and 9 are figures analogous to figures 4 and 5 respectively of another embodiment of a module 100 and of an optoelectronic circuit 105 comprising several examples of the module 100.
  • the elements common between the module 100 and the module 90 are designated by the same references.
  • the module 100 comprises all the elements of the module 90 with the difference that the terminal I_ctrl_out is not present and that the terminal I_ctrl_in is connected directly to the demodulation circuit 60.
  • the data transmission between the master module and the slave modules is carried out by high frequency modulation of the potential at the I_ctrl terminal.
  • each module 100 The connection of the terminals A, K, Vdd and Gnd of each module 100 is identical to what was described previously for the module 40 in relation to the figure 5 .
  • the I_ctrl terminal is left floating.
  • the I_ctrl_in terminal is connected to a conductive line 106 by a capacitor 108.
  • the I_ctrl terminal of the master module is connected to the conductive line 106 by a capacitor 109.
  • the operation of the optoelectronic circuit 105 is as follows.
  • the role of master module or slave module is determined as described above for optoelectronic circuit 80.
  • modulation circuit 58 of the master module under the control of selection circuit 51, varies the potential. to the I_ctrl terminal to transmit data to the slave modules.
  • the variations of the potential at the I_ctrl terminal are reproduced at the I_ctrl_in terminals of each slave module by capacitive coupling.
  • the potential modulation at the I_ctrl terminal can be of any type, for example amplitude modulation and / or frequency modulation.
  • the modulation circuit 58 of each slave module remains inactive.
  • the demodulation circuit 60 of each module is adapted to receive the data transmitted to the terminal I_ctrl_in and the control circuit 62 is suitable for controlling the opening or closing of the switch 64 as a function of the data received.
  • each control circuit 46 is, moreover, adapted to modulate the potential at the terminal I_ctrl_in. Bidirectional communication can then be implemented between the master module and the slave modules.
  • the supply of the signal S3 from the control circuit 44 to the control circuit 46 makes it possible to facilitate the setting up of a bidirectional communication protocol between the master module and the slave modules, in particular concerning the priorities of access to the communication channel.
  • An advantage of the present embodiment is that the data transmission between the modules is carried out by capacitive coupling and therefore allows the implementation of a bidirectional communication between the master module and each slave module, the performance of which does not depend on the position. relative in the succession of modules between the master module and the slave module.
  • each slave module can signal itself to the master module, for example when the optoelectronic circuit is started.
  • the activation sequence of the light-emitting diodes then being adapted by the master module as a function of the number of slave modules. This makes it possible to modify in a simple manner the number of modules of the optoelectronic circuit 105.
  • the exchange of data between the master module and each slave module is carried out by a single wire link.
  • the transmission of data from the master module to each slave module is carried out using a two-wire link, corresponding, for example, to an I 2 C or other bus.
  • FIGS. 10 and 11 are figures analogous to figures 8 and 9 respectively of another embodiment of a module 110 and an optoelectronic circuit 115 comprising several examples of module 110.
  • the elements common between the module 110 and the module 100 are designated by the same references.
  • the module 110 comprises all the elements of the module 100 with the difference that the module 110 comprises an additional terminal MS and that the selection circuit 51 of the module 110 is connected to the terminal MS instead of being connected to the terminal CS as is the case for module 100.
  • the transmission of data between the master module and the slave modules can be carried out as has been described previously for the module 100.
  • the transmission of data between the master module and the slave modules can be implemented as has been described for module 40 or module 90.
  • terminals A, K, CS, K, Vdd and Gnd of each module 110 is identical to what has been described previously for module 40 in relation to figure 5 .
  • the MS terminal is left floating.
  • the MS terminal is connected to the CS terminal.
  • the selection circuit 51 of each module 40 determines whether the terminal MS is left floating or at a neutral potential other than GND. If this is the case, the selection circuit 51 transmits an inhibition signal S3 to the control circuit 46 and the module considered operates as a slave module. When the terminal MS is detected as not being left floating, the selection circuit 51 transmits an activation signal S3 to the control circuit 46 and the module considered operates as a master module.
  • the figure 12 is a figure similar to the figure 4 of another embodiment of a module 120 comprising light emitting diodes.
  • the module 120 has the same structure as the module 40 with the difference that certain elements are present in triplicate.
  • the module 120 comprises three overall light-emitting diodes D 1 , D 2 and D 3 .
  • the light-emitting diodes D 1 , D 2 and D 3 can be adapted to emit light radiation at different wavelengths, for example in red, green and blue respectively.
  • the control circuit 62 is suitable for separately controlling each switch 64 1 , 64 2 and 64 3 .
  • the selection circuit 51 receives the signals supplied by the sensors 52 1 , 52 2 and 52 3 and the signals supplied by the sensors 54 1 , 54 2 and 54 3 .
  • the rules for connecting the modules 120 to each other are the same as those described above for the terminals A, CS and K, considering separately the set of terminals A 1 , CS 1 and K 1 , l 'set of terminals A 2 , K 2 and CS 2 and the set of terminals A 3 , CS 3 and K 3 , each set being referenced to the associated terminal Gnd.
  • the overall light-emitting diodes D 1 of the modules 120 are then connected in series, the overall light-emitting diodes D 2 are connected in series and the overall light-emitting diodes D 3 are connected in series.
  • the structure of the module 120 advantageously makes it possible to connect the modules 120 so that a first module plays the role of master module for the light-emitting diodes D 1 , that a second module, possibly different from the first module, plays the role of master module. role of master module for the light-emitting diodes D 2 , and that a third module, possibly different from the first module and the second module, plays the role of master module for the light-emitting diodes D 3 .
  • a first module plays the role of master module for the light-emitting diodes D 1
  • a second module possibly different from the first module
  • a third module possibly different from the first module and the second module
  • the three sets of terminals A 1 , CS 1 and K 1 , A 2 , K 2 and CS 2 and A 3 , CS 3 and K 3 are connected in the same way so that the same module plays the role master module for light emitting diodes D 1 , D 2 and D 3 .
  • the structure of the module 120 is derived from that of the module 40, certain elements being present in triplicate.
  • the structure of the module 120 can be derived from the module 110 shown in figure 10 .
  • the figure 13 shows an embodiment of an optoelectronic circuit 125 comprising a succession of modules 130 mounted in series.
  • a circuit 132 external to the modules, is connected to terminal S of the master module.
  • the circuit 132 can comprise a sensor, for example a brightness sensor, or can include a variator, and the current setpoint I CS supplied by the circuit 51 can depend on a signal supplied to the terminal S by the sensor 132.
  • the circuit 132 can be integrated into each module 130.
  • the circuit 132 can comprise an interface that can be actuated by a user and the activation sequence provided by the user. control circuit 44 of the master module can then depend on the signal supplied by circuit 132.
  • circuit 132 in the case where bidirectional communication is carried out between the master module and the slave modules, circuit 132 can be connected to the one of the slave modules and the signals supplied by the circuit 132 to the slave module are retransmitted by this slave module to the master module.
  • each module 130 can have a structure similar to that of one of the modules 90, 100 or 110.
  • the figure 14 represents an embodiment of an optoelectronic circuit 135 comprising a succession of modules 140 mounted in parallel.
  • Each 140 module can include all the elements of module 100 described previously in relation to the figure 8 .
  • each module 140 The terminals Vdd and A of each module 140 are connected to a source of a high reference potential VCC.
  • the Gnd and CS terminals are connected to a low reference potential.
  • Each module 140 is mounted as a master module. Each module 140 is then adapted to control its own light-emitting diode D. The exchange of data between modules 140 can be carried out as has been described previously for the optoelectronic circuit 105 shown in figure 9 .
  • the I_ctrl_in terminal is connected to the conductive line 106 by the capacitor 108 and the I_ctrl terminal is connected to the conductive line 106 by the capacitor 109.
  • the exchange of data between the modules can, by way of a variant, be carried out by a two-wire link, corresponding, for example, to an I 2 C bus or the like.
  • the light-emitting diodes D of the modules 140 are adapted to emit light at different wavelengths.
  • the optoelectronic circuit 135 comprises three modules 140.
  • the light-emitting diodes D of these modules 140 can be adapted to emit light radiation at different wavelengths, for example respectively in red, green and green. blue.
  • the set of modules 140 can then correspond to a display pixel.
  • Each module 140 is, for example, suitable for modifying the light intensity emitted by the light-emitting diode D that it contains as a function of data supplied by at least one of the other modules 140.
  • the modification of the light intensity can be carried out by any type of modulation, for example by an all-or-nothing modulation of the activation / inhibition switch of the light-emitting diode D or by a modulation of the intensity of the current supplied by the current source 42.
  • one of the modules 140 is adapted to receive a setpoint of a property of the radiation emitted by the optoelectronic circuit 135, for example a color setpoint.
  • the module 140 receiving the instruction transmits data to the other modules 140 so that the property of the radiation emitted by all the light-emitting diodes follows this instruction. This advantageously makes it possible to transmit a general instruction to the electronic circuit while the regulation of the radiation emitted by each module 140 is carried out directly by the module 140 considered.
  • the electronic components used to produce the module 40, 90, 100, 120, 140 can be components suitable for low voltage applications. This makes it possible in particular to reduce the cost of manufacturing the module.
  • the signal S4 from which the selection circuit 51 of the master module supplies the activation / inhibition sequence of the overall light-emitting diodes of the modules corresponds to the potential at the cathode of the overall light-emitting diode D.
  • the circuit 51 can be controlled by another signal, for example the potential at the anode of the light emitting diode D.

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Description

DomaineField

La présente description concerne un circuit optoélectronique, notamment un circuit optoélectronique comprenant des diodes électroluminescentes.The present description relates to an optoelectronic circuit, in particular an optoelectronic circuit comprising light emitting diodes.

Exposé de l'art antérieurDisclosure of prior art

Pour certaines applications, il est connu d'activer successivement des ensembles de diodes électroluminescentes d'un circuit optoélectronique. Un exemple concerne l'alimentation d'un circuit optoélectronique comprenant des diodes électroluminescentes avec une tension alternative, notamment une tension sinusoïdale, par exemple la tension du secteur.For certain applications, it is known practice to successively activate sets of light-emitting diodes of an optoelectronic circuit. An example relates to the supply of an optoelectronic circuit comprising light-emitting diodes with an alternating voltage, in particular a sinusoidal voltage, for example the voltage of the mains.

La figure 1 représente un exemple de circuit optoélectronique 10 comprenant des bornes d'entrée IN1 et IN2 entre lesquelles est appliquée une tension alternative VIN. Le circuit optoélectronique 10 comprend, en outre, un circuit redresseur 12 comportant un pont de diodes 14, recevant la tension VIN et fournissant une tension VALIM redressée qui alimente N ensembles en série de diodes électroluminescentes élémentaires, appelés diodes électroluminescentes globales Di, où i est un nombre entier variant de 1 à N.The figure 1 represents an example of an optoelectronic circuit 10 comprising input terminals IN 1 and IN 2 between which an alternating voltage V IN is applied. The optoelectronic circuit 10 further comprises a rectifier circuit 12 comprising a diode bridge 14, receiving the voltage V IN and supplying a rectified voltage V ALIM which supplies N sets in series of elementary light-emitting diodes, called global light-emitting diodes D i , where i is an integer varying from 1 to N.

Le circuit optoélectronique 10 comprend une source de courant 22 dont une borne est reliée au noeud A2 et dont l'autre borne est reliée à un noeud A3. Le circuit 10 comprend un dispositif 24 de commutation des diodes électroluminescentes globales Di, i variant de 1 à N. Le dispositif de commutation 24 permet d'augmenter progressivement le nombre de diodes électroluminescentes globales recevant la tension d'alimentation VALIM lors d'une phase croissante de la tension d'alimentation VALIM et de diminuer progressivement le nombre de diodes électroluminescentes globales recevant la tension d'alimentation VALIM lors d'une phase décroissante de la tension d'alimentation VALIM. Ceci permet de réduire la durée pendant laquelle aucune lumière n'est émise par le circuit optoélectronique 10. A titre d'exemple, le dispositif 24 comprend N interrupteurs commandables SW1 à SWN. Chaque interrupteur SWi, i variant de 1 à N, est monté entre le noeud A3 et la cathode de la diode électroluminescente globale Di et est commandé par un module de commande 26 en fonction de signaux fournis par un capteur 28.The optoelectronic circuit 10 comprises a current source 22, one terminal of which is connected to node A 2 and the other terminal of which is connected to a node A 3 . Circuit 10 comprises a device 24 for switching the overall light-emitting diodes D i , i varying from 1 to N. The switching device 24 makes it possible to gradually increase the number of overall light-emitting diodes receiving the supply voltage V ALIM during an increasing phase of the supply voltage V ALIM and of progressively reducing the number of overall light-emitting diodes receiving the supply voltage V ALIM during a decreasing phase of the supply voltage V ALIM . This makes it possible to reduce the period during which no light is emitted by the optoelectronic circuit 10. By way of example, the device 24 comprises N controllable switches SW 1 to SW N. Each switch SW i , i varying from 1 to N, is mounted between node A 3 and the cathode of the overall light-emitting diode D i and is controlled by a control module 26 as a function of signals supplied by a sensor 28.

L'ordre de fermeture et d'ouverture des interrupteurs SWi est fixé par la structure du circuit optoélectronique 10 et se répète pour chaque cycle de la tension d'alimentation VALIM.The order of closing and opening of the switches SW i is fixed by the structure of the optoelectronic circuit 10 and is repeated for each cycle of the supply voltage V ALIM .

La figure 2 est un chronogramme de la tension d'alimentation VALIM dans le cas où la tension alternative VIN correspond à une tension sinusoïdale et pour un exemple dans lequel le circuit optoélectronique 10 comprend quatre diodes électroluminescentes globales D1, D2, D3 et D4. En figure 2, on a représenté, de façon schématique, des phases P1, P2, P3 et P4. La phase P1 représente la phase de conduction de la diode électroluminescente globale D1. La phase P2 représente la phase de conduction de la diode électroluminescente globale D2. La phase P3 représente la phase de conduction de la diode électroluminescente globale D3. La phase P4 représente la phase de conduction de la diode électroluminescente globale D4.The figure 2 is a timing diagram of the supply voltage V ALIM in the case where the alternating voltage V IN corresponds to a sinusoidal voltage and for an example in which the optoelectronic circuit 10 comprises four global light-emitting diodes D 1 , D 2 , D 3 and D 4 . In figure 2 , there is shown, schematically, phases P 1 , P 2 , P 3 and P 4 . Phase P 1 represents the conduction phase of the overall light-emitting diode D 1 . Phase P 2 represents the conduction phase of the overall light-emitting diode D 2 . Phase P 3 represents the conduction phase of the overall light-emitting diode D 3 . Phase P 4 represents the conduction phase of the overall light-emitting diode D 4 .

Un inconvénient du circuit optoélectronique 10 est que la durée d'émission de lumière n'est pas la même pour chaque diode électroluminescente globale. De ce fait, la durée de vie de la diode électroluminescente globale qui émet le plus souvent de la lumière peut être inférieure à la durée de vie de la diode électroluminescente globale qui émet le moins souvent de la lumière. En outre, selon la configuration du circuit optoélectronique 10, un observateur peut percevoir une inhomogénéité de la puissance lumineuse émise par le circuit optoélectronique 10.A drawback of optoelectronic circuit 10 is that the duration of light emission is not the same for each overall light emitting diode. Therefore, the life of the overall light emitting diode which emits light most often may be less than the life of the overall light emitting diode which emits light least often. Furthermore, depending on the configuration of the optoelectronic circuit 10, an observer can perceive an inhomogeneity of the light power emitted by the optoelectronic circuit 10.

La figure 3 représente, de façon partielle et schématique, une vue de dessus du circuit optoélectronique 10 comprenant une zone 30 dans laquelle sont réalisées les diodes électroluminescentes globales D1 à D4 et une zone 32 dans laquelle sont réalisés les autres éléments du circuit optoélectronique 10. A titre d'exemple, les diodes électroluminescentes globales D1 à D4 sont sensiblement alignées et disposées à côté les unes des autres. Dans cet exemple d'agencement, un observateur peut percevoir, en particulier lorsque les diodes électroluminescentes globales sont espacées, une puissance lumineuse émise par la zone 30 du circuit optoélectronique 10 qui est plus importante du côté de la diode électroluminescente globale D1, dont la durée d'émission de lumière est la plus grande, que du côté de la diode électroluminescente globale D4, dont la durée d'émission de lumière est la plus faible.The figure 3 shows, partially and schematically, a top view of the optoelectronic circuit 10 comprising a zone 30 in which the overall light-emitting diodes D 1 to D 4 are made and a zone 32 in which the other elements of the optoelectronic circuit 10 are made. by way of example, the overall light-emitting diodes D 1 to D 4 are substantially aligned and arranged next to each other. In this example arrangement, an observer can perceive, in particular when the overall light-emitting diodes are spaced apart, a light power emitted by the zone 30 of the optoelectronic circuit 10 which is greater on the side of the overall light-emitting diode D 1 , of which the duration of light emission is greater than on the side of the overall light-emitting diode D 4 , whose light emission duration is the smallest.

Résoudre cet inconvénient par un agencement différent des diodes électroluminescentes peut s'avérer complexe. Il faudrait pour cela par exemple répartir de façon uniforme les diodes électroluminescentes de chaque groupe sur l'ensemble du circuit, ce qui compliquerait énormément la connexion des diodes électroluminescentes entre elles et imposerait sans doute l'utilisation d'un circuit avec plusieurs niveaux de métallisation.Solving this drawback by a different arrangement of the light-emitting diodes can prove to be complex. This would require, for example, to distribute the light-emitting diodes of each group evenly over the entire circuit, which would greatly complicate the connection of the light-emitting diodes to each other and would undoubtedly require the use of a circuit with several metallization levels. .

Les documents EP 2 088 836 , WO 2008/001274 , WO 2015/183570 , DE 10 2010 034 347 , US 2008/258695 et US 2009/284184 décrivent chacun un circuit optoélectronique comprenant des circuits électroniques élémentaires distincts reliés entre eux, chaque circuit électronique élémentaire comprenant une diode électroluminescente.The documents EP 2,088,836 , WO 2008/001274 , WO 2015/183570 , DE 10 2010 034 347 , US 2008/258695 and US 2009/284184 each describe an optoelectronic circuit comprising distinct elementary electronic circuits linked together, each elementary electronic circuit comprising a light-emitting diode.

Résumésummary

Un objet d'un mode de réalisation est de pallier tout ou partie des inconvénients des circuits optoélectroniques décrits précédemment comprenant des diodes électroluminescentes globales et un dispositif de commutation des diodes électroluminescentes.An object of an embodiment is to overcome all or part of the drawbacks of the optoelectronic circuits described above comprising overall light-emitting diodes and a device for switching light-emitting diodes.

Un autre objet d'un mode de réalisation est d'améliorer l'homogénéité d'émission de lumière par le circuit optoélectronique.Another object of an embodiment is to improve the homogeneity of light emission by the optoelectronic circuit.

Un autre objet d'un mode de réalisation est d'augmenter la durée de vie de la diode électroluminescente globale qui émet le plus longtemps de la lumière.Another object of an embodiment is to increase the life of the overall light emitting diode which emits the light the longest.

Un autre objet d'un mode de réalisation est de réduire l'encombrement du circuit optoélectronique.Another object of an embodiment is to reduce the bulk of the optoelectronic circuit.

Un autre objet d'un mode de réalisation est que le nombre de diodes électroluminescentes globales du circuit optoélectronique peut être modifié de façon simple.Another object of an embodiment is that the number of overall light emitting diodes of the optoelectronic circuit can be changed in a simple manner.

Un autre objet d'un mode de réalisation est que l'ordre d'activation des diodes électroluminescentes globales peut être modifié de façon simple.Another object of an embodiment is that the order of activation of the overall light emitting diodes can be changed in a simple manner.

Ainsi, un mode de réalisation prévoit un circuit optoélectronique selon la revendication 1.Thus, one embodiment provides an optoelectronic circuit according to claim 1.

Selon un mode de réalisation, la puce de circuit intégré de chaque circuit électronique élémentaire comprend, en outre, un circuit de communication contenant un circuit de modulation adapté à fournir un premier signal modulé et un circuit de démodulation adapté à fournir un deuxième signal par démodulation du premier signal, le circuit de commande de la diode électroluminescente étant adapté à activer ou inhiber la diode électroluminescente à partir du deuxième signal.According to one embodiment, the integrated circuit chip of each elementary electronic circuit further comprises a communication circuit containing a modulation circuit suitable for supplying a first modulated signal and a demodulation circuit. adapted to supply a second signal by demodulation of the first signal, the control circuit of the light-emitting diode being adapted to activate or inhibit the light-emitting diode from the second signal.

Selon un mode de réalisation, chaque circuit électronique élémentaire comprend un circuit de contrôle adapté à fournir un signal d'activation ou de désactivation aux autres circuits électroniques élémentaires. Le circuit optoélectronique est destiné à recevoir une tension variable. Pour chaque circuit électronique élémentaire, le circuit de commande de la diode électroluminescente est adapté à activer ou inhiber la diode électroluminescente en fonction du signal d'activation ou de désactivation, d'où il résulte que le nombre de diodes électroluminescentes activées dépend de la valeur de la tension variable.According to one embodiment, each elementary electronic circuit comprises a control circuit suitable for supplying an activation or deactivation signal to the other elementary electronic circuits. The optoelectronic circuit is intended to receive a variable voltage. For each elementary electronic circuit, the control circuit of the light-emitting diode is adapted to activate or inhibit the light-emitting diode according to the activation or deactivation signal, from which it follows that the number of activated light-emitting diodes depends on the value of variable voltage.

Selon un mode de réalisation, chaque circuit électronique élémentaire comprend une source de courant reliée à la diode électroluminescente.According to one embodiment, each elementary electronic circuit comprises a current source connected to the light-emitting diode.

Selon un mode de réalisation, la puce de circuit intégré de chaque circuit électronique élémentaire comprend, en outre, un circuit de détection d'un état maître ou esclave du circuit électronique élémentaire lorsque le circuit électronique élémentaire est en fonctionnement.According to one embodiment, the integrated circuit chip of each elementary electronic circuit further comprises a circuit for detecting a master or slave state of the elementary electronic circuit when the elementary electronic circuit is in operation.

Selon un mode de réalisation, le circuit optoélectronique comprend plusieurs circuits électroniques élémentaires montés en série.According to one embodiment, the optoelectronic circuit comprises several elementary electronic circuits connected in series.

Selon un mode de réalisation, au moins l'un des circuits électroniques élémentaires, appelé circuit maître, est adapté à transmettre des données aux autres circuits électroniques élémentaires, appelés circuits esclaves, de façon que les diodes électroluminescentes soient activées de façon aléatoire ou selon une succession donnée.According to one embodiment, at least one of the elementary electronic circuits, called master circuit, is suitable for transmitting data to other elementary electronic circuits, called slave circuits, so that the light-emitting diodes are activated randomly or according to a given succession.

Selon un mode de réalisation, chaque circuit électronique élémentaire comprend, en outre, une première borne. Le circuit optoélectronique comprend un capteur relié à la première borne de l'un des circuits électroniques élémentaires, et l'intensité du courant fourni par la source de courant du circuit maître dépend d'un troisième signal fourni par le capteur.According to one embodiment, each elementary electronic circuit further comprises a first terminal. The optoelectronic circuit comprises a sensor connected to the first terminal of one of the elementary electronic circuits, and the intensity of the current supplied by the current source of the master circuit depends on a third signal supplied by the sensor.

Selon un mode de réalisation, le circuit optoélectronique comprend plusieurs circuits électroniques élémentaires montés en parallèle.According to one embodiment, the optoelectronic circuit comprises several elementary electronic circuits connected in parallel.

Selon un mode de réalisation, pour chaque circuit électronique élémentaire, le premier signal correspond à une modulation du courant d'alimentation de la diode électroluminescente.According to one embodiment, for each elementary electronic circuit, the first signal corresponds to a modulation of the supply current of the light-emitting diode.

Selon un mode de réalisation, chaque circuit électronique élémentaire comprend, en outre, une deuxième borne. Le deuxième signal correspond à un courant modulé fourni par le circuit de modulation à la deuxième borne qui est différent du courant d'alimentation de la diode électroluminescente, ou le deuxième signal correspond au potentiel à ladite borne.According to one embodiment, each elementary electronic circuit further comprises a second terminal. The second signal corresponds to a modulated current supplied by the modulation circuit to the second terminal which is different from the supply current of the light-emitting diode, or the second signal corresponds to the potential at said terminal.

Selon un mode de réalisation, le circuit optoélectronique comprend, en outre, une troisième borne, le circuit de démodulation étant adapté à recevoir le deuxième signal par la troisième borne.According to one embodiment, the optoelectronic circuit further comprises a third terminal, the demodulation circuit being adapted to receive the second signal via the third terminal.

Selon un mode de réalisation, la troisième borne de chaque circuit électronique élémentaire est reliée à une ligne conductrice par l'intermédiaire d'un condensateur.According to one embodiment, the third terminal of each elementary electronic circuit is connected to a conductive line via a capacitor.

Selon un mode de réalisation, chaque circuit électronique élémentaire comprend, en outre, une quatrième borne et un circuit de recopie reliant la troisième borne et la quatrième borne et adapté à fournir au circuit de démodulation une copie du courant circulant entre les troisième et quatrième bornes.According to one embodiment, each elementary electronic circuit further comprises a fourth terminal and a copying circuit connecting the third terminal and the fourth terminal and adapted to supply the demodulation circuit with a copy of the current flowing between the third and fourth terminals. .

Selon un mode de réalisation, les circuits électroniques élémentaires sont montés en série selon une succession de circuits électroniques élémentaires. Pour chaque circuit électronique élémentaire, sauf pour les circuits électroniques élémentaires situés aux extrémités de la succession, la quatrième borne du circuit électronique élémentaire est reliée à la troisième borne du circuit électronique élémentaire précédent de la succession.According to one embodiment, the elementary electronic circuits are connected in series according to a succession of elementary electronic circuits. For each elementary electronic circuit, except for the elementary electronic circuits located at the ends of the succession, the fourth terminal of the elementary electronic circuit is connected to the third terminal of the preceding elementary electronic circuit of the succession.

Selon un mode de réalisation, chaque circuit électronique élémentaire comprend moins de cinq diodes électroluminescentes.According to one embodiment, each elementary electronic circuit comprises less than five light-emitting diodes.

Brève description des dessinsBrief description of the drawings

Ces caractéristiques et avantages, ainsi que d'autres, seront exposés en détail dans la description suivante de modes de réalisation particuliers faite à titre non limitatif en relation avec les figures jointes parmi lesquelles :

  • la figure 1, décrite précédemment, est un schéma électrique d'un exemple d'un circuit optoélectronique comprenant des diodes électroluminescentes ;
  • la figure 2, décrite précédemment, est un chronogramme représentant les phases d'émission de lumière des diodes électroluminescentes du circuit optoélectronique de la figure 1 ;
  • la figure 3, décrite précédemment, est une vue de dessus, partielle et schématique, d'un exemple d'agencement des éléments du circuit optoélectronique de la figure 1 ;
  • la figure 4 est un schéma électrique d'un mode de réalisation d'un module d'un circuit optoélectronique comprenant des diodes électroluminescentes ;
  • la figure 5 est un schéma électrique d'un mode de réalisation d'un circuit optoélectronique réalisé à partir du module représenté en figure 4 ;
  • les figures 6 et 7 sont des figures analogues respectivement aux figures 4 et 5 d'un autre mode de réalisation d'un module et d'un circuit optoélectronique réalisé à partir de ce module ;
  • les figures 8 et 9 sont des figures analogues respectivement aux figures 4 et 5 d'un autre mode de réalisation d'un module et d'un circuit optoélectronique réalisé à partir de ce module ;
  • les figures 10 et 11 sont des figures analogues respectivement aux figures 4 et 5 d'un autre mode de réalisation d'un module et d'un circuit optoélectronique réalisé à partir de ce module ;
  • la figure 12 est une figure analogue à la figure 4 d'un autre mode de réalisation d'un module d'un circuit optoélectronique comprenant des diodes électroluminescentes ; et
  • les figures 13 et 14 sont des schémas électriques d'autres modes de réalisation de circuits optoélectroniques à diodes électroluminescentes.
These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments given without limitation in relation to the accompanying figures, among which:
  • the figure 1 , described above, is an electrical diagram of an example of an optoelectronic circuit comprising light emitting diodes;
  • the figure 2 , described previously, is a timing diagram representing the light emission phases of the electroluminescent diodes of the optoelectronic circuit of the figure 1 ;
  • the figure 3 , described above, is a top view, partial and schematic, of an example of the arrangement of the elements of the optoelectronic circuit of the figure 1 ;
  • the figure 4 is an electric diagram of an embodiment of a module of an optoelectronic circuit comprising light emitting diodes;
  • the figure 5 is an electrical diagram of an embodiment of an optoelectronic circuit produced from the module shown in figure 4 ;
  • the figures 6 and 7 are figures respectively analogous to figures 4 and 5 of another embodiment of a module and of an optoelectronic circuit produced from this module;
  • the figures 8 and 9 are figures respectively analogous to figures 4 and 5 of another embodiment of a module and of an optoelectronic circuit produced from this module;
  • the figures 10 and 11 are figures respectively analogous to figures 4 and 5 of another embodiment of a module and of an optoelectronic circuit produced from this module;
  • the figure 12 is a figure similar to the figure 4 of another embodiment of a module of an optoelectronic circuit comprising light emitting diodes; and
  • the figures 13 and 14 are electrical diagrams of other embodiments of optoelectronic circuits with light emitting diodes.

Description détailléedetailed description

Par souci de clarté, de mêmes éléments ont été désignés par de mêmes références aux différentes figures et, de plus, les diverses figures ne sont pas tracées à l'échelle. Dans la suite de la description, sauf indication contraire, les termes "sensiblement", "environ" et "de l'ordre de" signifient "à 10 % près". De plus, on appelle "signal binaire" un signal qui alterne entre un premier état constant, par exemple un état bas, noté "0", et un deuxième état constant, par exemple un état haut, noté "1". Les états haut et bas de signaux binaires différents d'un même circuit électronique peuvent être différents. En pratique, les signaux binaires peuvent correspondre à des tensions ou à des courants qui peuvent ne pas être parfaitement constants à l'état haut ou bas. Par ailleurs, dans la présente description, on utilise le terme "connecté" pour désigner une liaison électrique directe, sans composant électronique intermédiaire, par exemple au moyen d'une piste conductrice, et le terme "couplé" ou le terme "relié", pour désigner soit une liaison électrique directe (signifiant alors "connecté") soit une liaison via un ou plusieurs composants intermédiaires (résistance, condensateur, etc.).For the sake of clarity, the same elements have been designated by the same references in the various figures and, moreover, the various figures are not drawn to scale. In the remainder of the description, unless otherwise indicated, the terms "substantially", "approximately" and "of the order of" mean "to within 10%". In addition, the term “binary signal” is used to mean a signal which alternates between a first constant state, for example a low state, denoted "0", and a second constant state, for example a high state, denoted "1". The high and low states of different binary signals of the same electronic circuit can be different. In practice, the binary signals may correspond to voltages or currents which may not be perfectly constant in the high or low state. Furthermore, in the present description, the term "connected" is used to denote a direct electrical connection, without an intermediate electronic component, for example by means of a conductive track, and the term "coupled" or the term "connected", to denote either a direct electrical connection (meaning then "connected") or a connection via one or more intermediate components (resistance, capacitor, etc.).

Selon un mode de réalisation, le circuit optoélectronique a une structure modulaire et comprend plusieurs modules, également appelés circuits électroniques élémentaires, reliés les uns aux autres. Selon un mode de réalisation, les modules ne sont pas connectés à un noeud commun relié à une source d'un potentiel de référence bas, par exemple la masse du circuit optoélectronique. En particulier, pour la majorité des modules, chaque module est relié seulement à un ou à deux autres modules et dispose d'une masse flottante. Chaque module comprend une diode électroluminescente globale et un circuit électronique. Selon un mode de réalisation, la diode électroluminescente globale correspond à une première puce de circuit intégré et le circuit électronique correspond à une deuxième puce de circuit intégré, les première et deuxième puces étant montées sur un circuit imprimé ou intégrées dans un même boitier. Selon un mode de réalisation, les modules ont tous la même structure. Ceci permet de façon avantageuse d'ajouter facilement un module au circuit optoélectronique ou de retirer facilement un module du circuit optoélectronique.According to one embodiment, the optoelectronic circuit has a modular structure and comprises several modules, also called elementary electronic circuits, connected to each other. According to one embodiment, the modules are not connected to a common node connected to a source of a low reference potential, for example the ground of the optoelectronic circuit. In particular, for the majority of modules, each module is connected only to one or two other modules and has a floating mass. Each module includes a diode overall electroluminescent and electronic circuit. According to one embodiment, the overall light-emitting diode corresponds to a first integrated circuit chip and the electronic circuit corresponds to a second integrated circuit chip, the first and second chips being mounted on a printed circuit or integrated in the same package. According to one embodiment, the modules all have the same structure. This advantageously makes it possible to easily add a module to the optoelectronic circuit or to easily remove a module from the optoelectronic circuit.

Selon un mode de réalisation, pour chaque module, le circuit électronique comprend un circuit de commande de la diode électroluminescente globale, par exemple un circuit d'activation/inhibition de la diode électroluminescente globale. Les circuits électroniques des modules permettent d'activer ou d'inhiber les diodes électroluminescentes globales en fonction de la valeur de la tension d'alimentation du circuit optoélectronique selon une séquence de sélection.According to one embodiment, for each module, the electronic circuit comprises a control circuit for the overall light-emitting diode, for example an activation / inhibition circuit for the overall light-emitting diode. The electronic circuits of the modules make it possible to activate or inhibit the overall light-emitting diodes as a function of the value of the supply voltage of the optoelectronic circuit according to a selection sequence.

Selon un mode de réalisation, les circuits électroniques des modules sont adaptés à communiquer entre eux, par exemple pour la transmission de la séquence de sélection des diodes électroluminescentes en fonction de la tension d'alimentation.According to one embodiment, the electronic circuits of the modules are adapted to communicate with each other, for example for the transmission of the selection sequence of the light-emitting diodes as a function of the supply voltage.

Selon un mode de réalisation, les modules peuvent être reliés les uns aux autres de façon que les diodes électroluminescentes globales puissent être montées en série et/ou en parallèle.According to one embodiment, the modules can be connected to each other so that the overall light emitting diodes can be connected in series and / or in parallel.

De préférence, le nombre de diodes électroluminescentes qui sont activées varie de façon automatique en fonction de la valeur de la tension d'alimentation.Preferably, the number of light-emitting diodes which are activated varies automatically as a function of the value of the supply voltage.

De préférence, la séquence de sélection des diodes électroluminescentes en fonction de la tension d'alimentation est une séquence aléatoire ou pseudo-aléatoire.Preferably, the sequence for selecting the light-emitting diodes as a function of the supply voltage is a random or pseudo-random sequence.

Selon un mode de réalisation, le circuit optoélectronique comprend au moins un ensemble de plusieurs modules montés en série, la séquence de sélection des diodes électroluminescentes globales des modules de cet ensemble est commandée par un seul des modules de cet ensemble, appelé module maître, les autres modules de cet ensemble étant appelés modules esclaves. Selon un mode de réalisation, chaque module est susceptible d'être un module maître ou un module esclave et la configuration de chaque module en module maître ou en module esclave est obtenue de façon automatique, par exemple par la façon dont le module est connecté aux autres modules dans le circuit optoélectronique.According to one embodiment, the optoelectronic circuit comprises at least one set of several modules mounted in series, the diode selection sequence The overall electroluminescent of the modules of this set is controlled by only one of the modules of this set, called the master module, the other modules of this set being called slave modules. According to one embodiment, each module is capable of being a master module or a slave module and the configuration of each module as a master module or as a slave module is obtained automatically, for example by the way in which the module is connected to the other modules in the optoelectronic circuit.

Selon un mode de réalisation, chaque module comprend une source de courant d'alimentation de la diode électroluminescente du module. De préférence, seule la source de courant du module maître est activée.According to one embodiment, each module comprises a current source for supplying the light-emitting diode of the module. Preferably, only the current source of the master module is activated.

Selon un mode de réalisation, le circuit de commande est adapté à modifier l'intensité du courant fourni par la source de courant, par exemple à partir d'une consigne reçue par le module.According to one embodiment, the control circuit is adapted to modify the intensity of the current supplied by the current source, for example from a setpoint received by the module.

Selon un mode de réalisation, le circuit optoélectronique comprend plusieurs modules émettant des lumières de couleurs différentes, l'un de ces modules étant adapté à commander les autres modules pour la commande de la couleur globale émise par tous les modules.According to one embodiment, the optoelectronic circuit comprises several modules emitting lights of different colors, one of these modules being suitable for controlling the other modules for controlling the overall color emitted by all the modules.

La figure 4 représente un mode de réalisation d'un module 40 pouvant être utilisé pour la réalisation d'un circuit optoélectronique. Le module 40 comprend :

  • des bornes A, K, CS, Vdd, S et Gnd ;
  • une diode électroluminescente globale D dont la cathode est reliée à la borne K et dont l'anode est reliée à la borne A ;
  • une source de courant 42 dont une borne est reliée à la cathode de la diode électroluminescente globale D et dont l'autre borne est reliée à la borne CS ;
  • un circuit de contrôle 44 adapté à fournir un signal S1 de sélection de diodes électroluminescentes globales ;
  • un circuit 46 de commande de la diode électroluminescente globale D recevant un signal S2 et adapté à court-circuiter ou à laisser passante la diode électroluminescente globale D en fonction du signal S2 ;
  • un circuit de communication 48 adapté à fournir le signal S2 à partir du signal S1 ; et
  • un circuit 50 (Bandgap & supplies) de fourniture de tensions/courants d'alimentation aux différents circuits du module 40.
The figure 4 shows an embodiment of a module 40 that can be used for the production of an optoelectronic circuit. Module 40 includes:
  • terminals A, K, CS, Vdd, S and Gnd;
  • a global light-emitting diode D whose cathode is connected to terminal K and whose anode is connected to terminal A;
  • a current source 42, one terminal of which is connected to the cathode of the overall light-emitting diode D and the other terminal of which is connected to the CS terminal;
  • a control circuit 44 adapted to supply a signal S1 for selecting global light-emitting diodes;
  • a circuit 46 for controlling the overall light-emitting diode D receiving a signal S2 and adapted to short-circuit or to leave on the global light-emitting diode D as a function of the signal S2;
  • a communication circuit 48 adapted to supply the signal S2 from the signal S1; and
  • a circuit 50 (Bandgap & supplies) for supplying supply voltages / currents to the various circuits of the module 40.

Les circuits du module 40 peuvent correspondre en tout ou en partie à des circuits dédiés. Toutefois, au moins certains de ces circuits peuvent comprendre un processeur adapté à exécuter un programme d'ordinateur stocké dans une mémoire.The circuits of the module 40 can correspond in whole or in part to dedicated circuits. However, at least some of these circuits may include a processor adapted to execute a computer program stored in a memory.

La borne Vdd est destinée à être reliée à une source d'un potentiel haut et la borne Gnd est destinée à être reliée à une source d'un potentiel bas. Chaque module 40 dispose d'une masse locale dans la mesure où les potentiels dans un module 40 sont référencés par rapport au potentiel à la borne Gnd de ce module 40. Les liaisons électriques entre le circuit 50 et les autres circuits du module 40 ne sont pas représentées. De même, les liaisons entre les circuits du module 40 et les bornes Vdd et Gnd ne sont pas représentées. Selon un autre mode de réalisation, chaque module 40 comprend au moins un condensateur qui est chargé chaque fois que la diode électroluminescente globale D est passante et le circuit 50 (Bandgap & supplies) fournit les tensions/courants d'alimentation des différents circuits du module 40 à partir de l'énergie stockée dans le condensateur. La borne Vdd peut alors ne pas être présente.Terminal Vdd is intended to be connected to a source of high potential and terminal Gnd is intended to be connected to a source of low potential. Each module 40 has a local ground insofar as the potentials in a module 40 are referenced with respect to the potential at the terminal Gnd of this module 40. The electrical connections between the circuit 50 and the other circuits of the module 40 are not not shown. Likewise, the connections between the circuits of the module 40 and the terminals Vdd and Gnd are not shown. According to another embodiment, each module 40 comprises at least one capacitor which is charged each time the global light-emitting diode D is on and the circuit 50 (Bandgap & supplies) supplies the supply voltages / currents of the various circuits of the module. 40 from the energy stored in the capacitor. The Vdd terminal may then not be present.

La diode électroluminescente globale D comprend au moins une diode électroluminescente élémentaire et est, de préférence, composée de la mise en série et/ou en parallèle d'au moins deux diodes électroluminescentes élémentaires.The overall light-emitting diode D comprises at least one elementary light-emitting diode and is preferably made up of the placing in series and / or in parallel of at least two elementary light-emitting diodes.

Chaque module 40 peut correspondre à une unique puce de circuit intégré ou comprendre deux puces de circuit intégré ou plus de deux puces de circuit intégré. Chaque module 40 correspond à un circuit électronique élémentaire distinct et tous les composants du module 40 sont contenus dans un même boîtier. En particulier, la diode électroluminescente globale D et la puce de circuit intégré ou les puces de circuit intégré comprenant les circuits 44, 46, 48 et 50 sont contenues dans un même boîtier.Each module 40 may correspond to a single integrated circuit chip or comprise two integrated circuit chips or more than two integrated circuit chips. Each module 40 corresponds to a separate elementary electronic circuit and all the components of the module 40 are contained in the same housing. In in particular, the overall light-emitting diode D and the integrated circuit chip or the integrated circuit chips comprising the circuits 44, 46, 48 and 50 are contained in the same package.

Le circuit de contrôle 44 comprend un circuit 51 (System Control Unit) de commande du module 40, appelé circuit de sélection par la suite. Le circuit de sélection 51 est adapté à sélectionner l'état "maître" ou "esclave" du module 40 et à fournir un signal S3 au circuit de commande 46 représentatif du fait que le module 40 fonctionne comme un module maître ou comme un module esclave. A titre de variante, il n'y a pas de transmission de signal S3 entre le circuit de contrôle 44 et le circuit de commande 46. Selon un mode de réalisation, le circuit de sélection 51 est adapté à déterminer si la source de courant 42 du module 40 est en fonctionnement. Lorsque la source de courant 42 est en fonctionnement, le circuit de sélection 51 fournit par exemple un signal S3 à "1", ce qui signifie que le module 40 fonctionne comme un module maître. Lorsque la source de courant 42 n'est pas en fonctionnement, le circuit de sélection 51 fournit par exemple un signal S3 à "0", ce qui signifie que le module 40 fonctionne comme un module esclave. Selon un mode de réalisation, le circuit optoélectronique 10 comprend un capteur de tension 52 (Vsense) relié au circuit de sélection 51 et adapté à mesurer le potentiel à la borne CS.The control circuit 44 comprises a circuit 51 (System Control Unit) for controlling the module 40, referred to below as a selection circuit. The selection circuit 51 is adapted to select the “master” or “slave” state of the module 40 and to supply a signal S3 to the control circuit 46 representative of the fact that the module 40 operates as a master module or as a slave module. . As a variant, there is no transmission of signal S3 between the control circuit 44 and the control circuit 46. According to one embodiment, the selection circuit 51 is adapted to determine whether the current source 42 of module 40 is in operation. When the current source 42 is in operation, the selection circuit 51 provides for example a signal S3 at "1", which means that the module 40 operates as a master module. When the current source 42 is not in operation, the selection circuit 51 provides for example a signal S3 at "0", which means that the module 40 operates as a slave module. According to one embodiment, the optoelectronic circuit 10 comprises a voltage sensor 52 (Vsense) connected to the selection circuit 51 and adapted to measure the potential at the terminal CS.

Selon un mode de réalisation, le circuit de sélection 51 est adapté à commander l'intensité ICS du courant fourni par la source de courant 42. A titre d'exemple, le circuit de sélection 51 est adapté à fournir une consigne d'intensité du courant ICS à un circuit de commande de courant 53 (Current Control) qui convertit la consigne en un signal de commande de la source de courant 52.According to one embodiment, the selection circuit 51 is suitable for controlling the intensity I CS of the current supplied by the current source 42. By way of example, the selection circuit 51 is suitable for providing a current setpoint. current I CS to a current control circuit 53 (Current Control) which converts the setpoint into a control signal for the current source 52.

Chaque module 40 peut, en outre, comprendre la borne S qui est reliée au circuit de sélection 51. Un circuit externe aux modules 40, par exemple un capteur, non représenté en figure 4, peut être relié à la borne S. A titre d'exemple, la consigne de courant ICS fournie par le circuit 51 peut dépendre du signal reçu par le circuit 51 par la borne S.Each module 40 can furthermore comprise the terminal S which is connected to the selection circuit 51. A circuit external to the modules 40, for example a sensor, not shown in figure 4 , can be connected to terminal S. For example, the setpoint of current I CS supplied by circuit 51 may depend on the signal received by circuit 51 by terminal S.

Selon un mode de réalisation, le circuit de sélection 51 reçoit un signal de mesure S4 fourni par un capteur 54 (Vsense) . A titre d'exemple, le capteur 54 est un capteur de tension adapté à mesurer la tension à la cathode de la diode électroluminescente globale D. Le circuit de sélection 51 est adapté à fournir le signal S1 qui est représentatif des diodes électroluminescentes du circuit optoélectronique à activer/inhiber.According to one embodiment, the selection circuit 51 receives a measurement signal S4 supplied by a sensor 54 (Vsense). By way of example, the sensor 54 is a voltage sensor adapted to measure the voltage at the cathode of the overall light-emitting diode D. The selection circuit 51 is adapted to supply the signal S1 which is representative of the light-emitting diodes of the optoelectronic circuit. to activate / deactivate.

Le circuit de communication 48 comprend un circuit de modulation 58 (Modulation Unit) recevant le signal S1 fourni par le circuit de contrôle 44 et un circuit de démodulation 60 (Démodulation Unit) fournissant le signal S2 au circuit de commande 46. Les circuits de modulation 58 et de démodulation 60 mettent en oeuvre des étapes de modulation/démodulation de sorte que le signal S2 soit, comme le signal S1, représentatif des diodes électroluminescentes du circuit optoélectronique à activer/inhiber.The communication circuit 48 comprises a modulation circuit 58 (Modulation Unit) receiving the signal S1 supplied by the control circuit 44 and a demodulation circuit 60 (Demodulation Unit) supplying the signal S2 to the control circuit 46. The modulation circuits 58 and demodulation 60 implement modulation / demodulation steps so that the signal S2 is, like the signal S1, representative of the light-emitting diodes of the optoelectronic circuit to be activated / inhibited.

Le circuit de commande 46 comprend un circuit de pilotage 62 (Switch Control) recevant le signal S2 et le signal S3 et fournissant un signal S5 de commande à un interrupteur 64 monté aux bornes de la diode électroluminescente globale D. A titre d'exemple, le signal S5 est un signal binaire et l'interrupteur 64 est ouvert lorsque le signal S5 est dans un premier état, par exemple l'état bas, et l'interrupteur 64 est fermé lorsque le signal S5 est dans un deuxième état, par exemple l'état haut. Chaque interrupteur 64 est, par exemple, un interrupteur à base d'au moins un transistor, notamment un transistor à effet de champ à grille métal-oxyde ou transistor MOS, à enrichissement (normalement fermé) ou à appauvrissement (normalement ouvert). Selon un mode de réalisation, chaque interrupteur 64 correspond à un transistor MOS, par exemple à canal N, dont le drain est relié à l'anode de la diode électroluminescente globale D, dont la source est reliée à la cathode de la diode électroluminescente globale D et dont la grille reçoit le signal S5.The control circuit 46 comprises a control circuit 62 (Switch Control) receiving the signal S2 and the signal S3 and supplying a control signal S5 to a switch 64 mounted at the terminals of the overall light-emitting diode D. By way of example, the signal S5 is a binary signal and the switch 64 is open when the signal S5 is in a first state, for example the low state, and the switch 64 is closed when the signal S5 is in a second state, for example high state. Each switch 64 is, for example, a switch based on at least one transistor, in particular a field effect transistor with a metal-oxide gate or MOS transistor, with enrichment (normally closed) or depletion (normally open). According to one embodiment, each switch 64 corresponds to a MOS transistor, for example N-channel transistor, the drain of which is connected to the anode of the overall light-emitting diode D, the source of which is connected to the cathode of the global light-emitting diode D and the gate of which receives the signal S5.

Dans le présent mode de réalisation, l'étape de modulation/démodulation mise en oeuvre par le circuit de communication 48 comprend la modulation du courant ICS fourni par la source de courant 42. Le circuit de modulation 58 est alors adapté à commander la source de courant 42 pour moduler le courant ICS fourni par la source de courant 42. Le circuit de communication 48 comprend, en outre, un circuit 66 de détection de la modulation du courant ICS comprenant une diode 68 montée en série entre la borne A et l'anode de la diode électroluminescente globale D et un capteur 70 de la tension aux bornes de la diode 68, fournissant un signal S6 au circuit de démodulation 60.In the present embodiment, the modulation / demodulation step implemented by the communication circuit 48 comprises the modulation of the current I CS supplied by the current source 42. The modulation circuit 58 is then adapted to control the source. current 42 to modulate the current I CS supplied by the current source 42. The communication circuit 48 further comprises a circuit 66 for detecting the modulation of the current I CS comprising a diode 68 connected in series between the terminal A and the anode of the global light-emitting diode D and a sensor 70 of the voltage across the terminals of the diode 68, supplying a signal S6 to the demodulation circuit 60.

La figure 5 représente un mode de réalisation d'un circuit optoélectronique 80 comprenant N modules 40 tels que représentés en figure 4, où N est un nombre entier compris entre 2 et 200, trois modules 40 étant représentés à titre d'exemple en figure 5. Les modules 40 correspondent à des circuits élémentaires distincts. En particulier, les boîtiers des modules 40 sont distincts. Selon un mode de réalisation, le circuit optoélectronique 80 comprend une succession de modules 40 montés en série entre un noeud A1 et un noeud A2, le module à la première position de la succession étant celui connecté au noeud A1 et le module à la dernière position de la succession étant celui connecté au noeud A2. Une tension d'alimentation VALIM est appliquée entre les noeuds A1 et A2. La tension d'alimentation VALIM peut correspondre à la tension oscillante fournie par un circuit redresseur. A titre de variante, la tension d'alimentation peut être une tension continue, par exemple une tension sensiblement constante.The figure 5 represents an embodiment of an optoelectronic circuit 80 comprising N modules 40 such as represented in figure 4 , where N is an integer between 2 and 200, three modules 40 being represented by way of example in figure 5 . The modules 40 correspond to distinct elementary circuits. In particular, the housings of the modules 40 are distinct. According to one embodiment, the optoelectronic circuit 80 comprises a succession of modules 40 mounted in series between a node A 1 and a node A 2 , the module at the first position of the succession being that connected to node A 1 and the module at the last position of the succession being that connected to node A 2 . A supply voltage V ALIM is applied between the nodes A 1 and A 2 . The supply voltage V ALIM can correspond to the oscillating voltage supplied by a rectifier circuit. As a variant, the supply voltage can be a direct voltage, for example a substantially constant voltage.

Pour chaque module 40, la borne Vdd est reliée au noeud A1 par une résistance 82 qui peut être identique ou différente selon les modules 40. La valeur de chaque résistance 82 est choisie pour que, pour chaque module 40, le potentiel à la borne Vdd soit compris dans une plage de valeurs adaptées au bon fonctionnement du circuit 50 pour la fourniture des tensions/courants d'alimentation des composants du module 40.For each module 40, terminal Vdd is connected to node A 1 by a resistor 82 which may be identical or different depending on the modules 40. The value of each resistor 82 is chosen so that, for each module 40, the potential at the terminal Vdd is within a range of values suitable for correct operation of the circuit 50 for supplying the supply voltages / currents of the components of the module 40.

Pour le module maître, les connexions des bornes A, K, Gnd et CS sont réalisées de la façon suivante :

  • la borne K est laissée flottante ;
  • lorsque le module maître est connecté au noeud A1, la borne A du module maître est connectée au noeud A1 ;
  • lorsque le module maître est connecté au noeud A2, les bornes CS et Gnd du module maître sont connectées au noeud A2 ;
  • lorsque le module maître n'est pas à une extrémité de la succession de modules 40, la borne A du module maître est connectée aux bornes K et Gnd du module esclave précédent et les bornes CS et Gnd du module maître sont connectées à la borne A du module esclave suivant.
For the master module, the connections of terminals A, K, Gnd and CS are made as follows:
  • terminal K is left floating;
  • when the master module is connected to node A 1 , terminal A of the master module is connected to node A 1 ;
  • when the master module is connected to node A 2 , the terminals CS and Gnd of the master module are connected to node A 2 ;
  • when the master module is not at one end of the succession of modules 40, terminal A of the master module is connected to terminals K and Gnd of the previous slave module and terminals CS and Gnd of the master module are connected to terminal A of the next slave module.

Pour chaque module esclave, les connexions des bornes A, K, Gnd et CS sont réalisées de la façon suivante :

  • la borne CS est laissée flottante ;
  • lorsque le module esclave est connecté au noeud A1, la borne A du module esclave est connectée au noeud A1 ;
  • lorsque le module esclave est connecté au noeud A2, les bornes K et Gnd du module esclave sont connectées au noeud A2 ;
  • lorsque le module esclave n'est pas à une extrémité de la chaîne, la borne A du module esclave est connectée aux bornes K et Gnd du module précédent lorsque le module précédent est un module esclave ou aux bornes CS et Gnd du module précédent lorsque le module précédent est le module maître et les bornes K et Gnd du module esclave sont connectées à la borne A du module suivant (esclave ou maître).
For each slave module, the connections of terminals A, K, Gnd and CS are made as follows:
  • the CS terminal is left floating;
  • when the slave module is connected to node A 1 , terminal A of the slave module is connected to node A 1 ;
  • when the slave module is connected to node A 2 , the terminals K and Gnd of the slave module are connected to node A 2 ;
  • when the slave module is not at one end of the chain, terminal A of the slave module is connected to terminals K and Gnd of the previous module when the previous module is a slave module or to terminals CS and Gnd of the previous module when the previous module is the master module and the K and Gnd terminals of the slave module are connected to the A terminal of the next module (slave or master).

De préférence, les modules 40 sont connectés les uns aux autres de façon qu'il n'y ait qu'un seul module maître, représenté à titre d'exemple en dernière position en figure 5.Preferably, the modules 40 are connected to each other so that there is only one master module, shown by way of example in the last position in figure 5 .

Le fonctionnement du circuit optoélectronique 80 est le suivant. Le circuit de sélection 51 de chaque module 40 détermine si la borne CS est laissée flottante. Si tel est le cas, le circuit de sélection 51 transmet un signal S3 d'inhibition au circuit de commande 46 et le module considéré fonctionne comme un module esclave. Lorsque la borne CS est détectée comme n'étant pas laissée flottante, le circuit de sélection 51 transmet un signal S3 d'activation au circuit de commande 46 et le module considéré fonctionne comme un module maître. La détection du fait que la borne CS est flottante ou non peut être réalisée en comparant le potentiel à la borne CS et le potentiel à la borne Gnd. Si les potentiels sont égaux, ceci signifie que la borne CS n'est pas flottante et si les potentiels sont différents, ceci signifie que la borne CS est laissée flottante.The operation of the optoelectronic circuit 80 is as follows. The selection circuit 51 of each module 40 determines whether the CS terminal is left floating. If this is the case, the selection circuit 51 transmits an inhibition signal S3 to the control circuit. command 46 and the module considered operates as a slave module. When the CS terminal is detected as not being left floating, the selection circuit 51 transmits an activation signal S3 to the control circuit 46 and the module considered operates as a master module. The detection of whether the CS terminal is floating or not can be performed by comparing the potential at the CS terminal and the potential at the Gnd terminal. If the potentials are equal, this means that the CS terminal is not floating and if the potentials are different, this means that the CS terminal is left floating.

En fonctionnement, le circuit de contrôle 44 du module maître commande le circuit de modulation 58 pour transmettre des données par modulation du courant ICS. La modulation du courant ICS peut être une modulation de tout type, par exemple une modulation en amplitude et/ou une modulation en fréquence. Le circuit de modulation 58 de chaque module esclave reste inactif. Le circuit de démodulation 60 de chaque module est adapté à recevoir les données transmises par démodulation du courant ICS et le circuit de pilotage 62 est adapté à commander l'ouverture ou la fermeture de l'interrupteur 64 en fonction des données reçues.In operation, the control circuit 44 of the master module controls the modulation circuit 58 to transmit data by modulating the current I CS . The modulation of the current I CS can be a modulation of any type, for example an amplitude modulation and / or a frequency modulation. The modulation circuit 58 of each slave module remains inactive. The demodulation circuit 60 of each module is suitable for receiving the data transmitted by demodulation of the current I CS and the driving circuit 62 is suitable for controlling the opening or closing of the switch 64 as a function of the data received.

Selon un mode de réalisation, les données fournies par le module maître et transmises à chaque module esclave par modulation du courant ICS peuvent être représentatives d'un ordre d'activation des diodes électroluminescentes globales au cours de l'évolution de la tension d'alimentation VALIM, par exemple au cours de chaque cycle de la tension VALIM dans le cas d'une tension VALIM variant de façon périodique. Cet ordre d'activation peut être modifié dans le temps afin que l'ordre d'activation des diodes électroluminescentes globales ne soit pas toujours le même pour chaque cycle de la tension d'alimentation VALIM. A titre d'exemple, l'ordre d'activation des diodes électroluminescentes globales peut être aléatoire.According to one embodiment, the data supplied by the master module and transmitted to each slave module by modulation of the current I CS can be representative of an order of activation of the overall light-emitting diodes during the evolution of the voltage of supply V ALIM , for example during each cycle of voltage V ALIM in the case of a voltage V ALIM varying periodically. This activation order can be modified over time so that the order of activation of the overall light-emitting diodes is not always the same for each cycle of the supply voltage V ALIM . By way of example, the order of activation of the global light-emitting diodes can be random.

Selon un mode de réalisation, à chaque module est associé un identifiant unique et les données fournies par le module maître comprennent notamment une succession d'identifiants. La liste d'identifiants peut être stockée dans une mémoire du circuit de commande 46. A titre d'exemple, lorsqu'un module esclave reçoit l'identifiant qui lui est associé, il change l'état de l'interrupteur 64, d'ouvert à fermé ou de fermé à ouvert.According to one embodiment, each module is associated with a unique identifier and the data supplied by the master module include in particular a succession of identifiers. The list of identifiers can be stored in a memory of the control circuit 46. By way of example, when a slave module receives the identifier associated with it, it changes the state of the switch 64, to open to closed or closed to open.

Les figures 6 et 7 sont des figures analogues aux figures 4 et 5 respectivement d'un autre mode de réalisation d'un module 90 et d'un circuit optoélectronique 95 comprenant plusieurs exemplaires du module 90.The figures 6 and 7 are figures analogous to figures 4 and 5 respectively of another embodiment of a module 90 and of an optoelectronic circuit 95 comprising several examples of the module 90.

Les éléments communs entre le module 40 et le module 90 sont désignés par les mêmes références. Le module 90 comprend l'ensemble des éléments du module 40 à la différence qu'il n'y a pas de modulation du courant ICS par le circuit de modulation 58 et que le circuit de modulation 58 est adapté à fournir un courant modulé Imod à une borne I_ctrl. Le module 90 comprend, en outre, deux bornes I_ctrl_in et I_ctrl_out et le circuit de communication 48 comprend un circuit de recopie 96 relié aux bornes I_ctrl_in et I_ctrl_out et relié au circuit de démodulation 60 et adapté à fournir une copie du courant circulant entre les bornes I_ctrl_in et I_ctrl_out au circuit de démodulation 60.The elements common between the module 40 and the module 90 are designated by the same references. The module 90 comprises all the elements of the module 40 with the difference that there is no modulation of the current I CS by the modulation circuit 58 and that the modulation circuit 58 is adapted to supply a modulated current I mod to an I_ctrl terminal. The module 90 further comprises two terminals I_ctrl_in and I_ctrl_out and the communication circuit 48 comprises a copy circuit 96 connected to the terminals I_ctrl_in and I_ctrl_out and linked to the demodulation circuit 60 and adapted to supply a copy of the current flowing between the terminals I_ctrl_in and I_ctrl_out to demodulation circuit 60.

Dans le présent mode de réalisation, la transmission de données entre le module maître et les modules esclaves est réalisée par une modulation du courant Imod qui est transmis sur une ligne conductrice dédiée par le module maître aux modules esclaves.In the present embodiment, the transmission of data between the master module and the slave modules is carried out by a modulation of the current I mod which is transmitted on a conductive line dedicated by the master module to the slave modules.

Dans le circuit optoélectronique 95, la connexion des bornes A, K, Vdd et Gnd de chaque module 90 est identique à ce qui a été décrit précédemment pour le module 40 en relation avec la figure 5 à la différence que le module maître est, de préférence, placé à la dernière position, c'est-à-dire connecté au noeud A2. En outre, la borne I_ctrl du module maître est reliée à la borne I_ctrl_in du module maître et la borne I_ctrl_out du module maître est reliée à la borne I_ctrl_in du module esclave précédent dans la succession de modules. Pour chaque module esclave, la borne I_ctrl n'est pas utilisée. Elle est laissée flottante ou fixée à un potentiel neutre adéquat pour le fonctionnement du circuit. La borne I_ctrl_in est reliée à la borne I_ctrl_out du module suivant dans la succession de modules et la borne I_ctrl_out est reliée à la borne I_ctrl_in du module précédent dans la succession de modules, à l'exception du module esclave à la première position dont la borne I_ctrl_out est reliée au noeud A1 ou Vdd via une résistance.In the optoelectronic circuit 95, the connection of the terminals A, K, Vdd and Gnd of each module 90 is identical to what has been described previously for the module 40 in relation to the figure 5 with the difference that the master module is preferably placed in the last position, that is to say connected to node A 2 . In addition, the I_ctrl terminal of the master module is connected to the I_ctrl_in terminal of the master module and the I_ctrl_out of the master module is connected to the I_ctrl_in terminal of the preceding slave module in the succession of modules. For each slave module, the I_ctrl terminal is not used. She is left floating or fixed at a neutral potential adequate for the operation of the circuit. The I_ctrl_in terminal is connected to the I_ctrl_out terminal of the next module in the succession of modules and the I_ctrl_out terminal is connected to the I_ctrl_in terminal of the previous module in the succession of modules, with the exception of the slave module in the first position whose terminal I_ctrl_out is connected to node A 1 or Vdd via a resistor.

Le fonctionnement du circuit optoélectronique 95 est le suivant. La détermination du rôle de module maître ou de module esclave est réalisée comme cela a été décrit précédemment pour le circuit optoélectronique 80. En fonctionnement, le circuit de modulation 58 du module maître, sous la commande du circuit de sélection 51, module le courant Imod pour transmettre des données par modulation du courant Imod. La modulation du courant Imod peut être de tout type, par exemple une modulation en amplitude et/ou une modulation en fréquence. Le circuit de modulation 58 de chaque module esclave reste inactif. Le courant Imod circule de module en module en traversant le circuit de recopie 96 de chaque module 90. Le circuit de recopie 96 de chaque module 90 fournit une copie du courant Imod au circuit de démodulation 60. Le circuit de démodulation 60 de chaque module est adapté à recevoir les données transmises par démodulation du courant Imod et le circuit de pilotage 62 est adapté à commander l'ouverture ou la fermeture de l'interrupteur 64 en fonction des données reçues.The operation of the optoelectronic circuit 95 is as follows. The role of master module or slave module is determined as described above for optoelectronic circuit 80. In operation, modulation circuit 58 of the master module, under the control of selection circuit 51, modulates current I mod to transmit data by modulating the current I mod . The modulation of the current I mod can be of any type, for example an amplitude modulation and / or a frequency modulation. The modulation circuit 58 of each slave module remains inactive. The current I mod flows from module to module by passing through the feedback circuit 96 of each module 90. The feedback circuit 96 of each module 90 supplies a copy of the current I mod to the demodulation circuit 60. The demodulation circuit 60 of each module is suitable for receiving the data transmitted by demodulation of the current I mod and the control circuit 62 is suitable for controlling the opening or closing of the switch 64 as a function of the data received.

Un avantage du présent mode de réalisation est que la modulation du courant Imod par le circuit de modulation 58 du module maître peut être mise en oeuvre plus simplement que la modulation du courant ICS dans le mode de réalisation décrit précédemment en relation avec les figures 4 et 5. En effet, l'impédance vue par la source de courant 42, due aux diodes électroluminescentes globales de l'ensemble des modules est plus élevée que l'impédance vue par le circuit de modulation 58 due aux circuits de recopie 96. De plus la modulation n'affecte pas la lumière émise.An advantage of the present embodiment is that the modulation of the current I mod by the modulation circuit 58 of the master module can be implemented more simply than the modulation of the current I CS in the embodiment described above in relation to the figures 4 and 5 . Indeed, the impedance seen by the current source 42, due to the overall light-emitting diodes of all the modules is higher than the impedance seen by the modulation circuit 58 due to the feedback circuits 96. In addition, the modulation does not affect the light emitted.

Les figures 8 et 9 sont des figures analogues aux figures 4 et 5 respectivement d'un autre mode de réalisation d'un module 100 et d'un circuit optoélectronique 105 comprenant plusieurs exemplaires du module 100.The figures 8 and 9 are figures analogous to figures 4 and 5 respectively of another embodiment of a module 100 and of an optoelectronic circuit 105 comprising several examples of the module 100.

Les éléments communs entre le module 100 et le module 90 sont désignés par les mêmes références. Le module 100 comprend l'ensemble des éléments du module 90 à la différence que la borne I_ctrl_out n'est pas présente et que la borne I_ctrl_in est reliée directement au circuit de démodulation 60.The elements common between the module 100 and the module 90 are designated by the same references. The module 100 comprises all the elements of the module 90 with the difference that the terminal I_ctrl_out is not present and that the terminal I_ctrl_in is connected directly to the demodulation circuit 60.

Dans le présent mode de réalisation, la transmission de données entre le module maître et les modules esclaves est réalisée par modulation haute fréquence du potentiel à la borne I_ctrl.In the present embodiment, the data transmission between the master module and the slave modules is carried out by high frequency modulation of the potential at the I_ctrl terminal.

La connexion des bornes A, K, Vdd et Gnd de chaque module 100 est identique à ce qui a été décrit précédemment pour le module 40 en relation avec la figure 5. En outre, pour chaque module esclave, la borne I_ctrl est laissée flottante. Pour chaque module, la borne I_ctrl_in est reliée à une ligne conductrice 106 par un condensateur 108. En outre, la borne I_ctrl du module maître est reliée à la ligne conductrice 106 par un condensateur 109.The connection of the terminals A, K, Vdd and Gnd of each module 100 is identical to what was described previously for the module 40 in relation to the figure 5 . In addition, for each slave module, the I_ctrl terminal is left floating. For each module, the I_ctrl_in terminal is connected to a conductive line 106 by a capacitor 108. In addition, the I_ctrl terminal of the master module is connected to the conductive line 106 by a capacitor 109.

Le fonctionnement du circuit optoélectronique 105 est le suivant. La détermination du rôle de module maître ou de module esclave est réalisée comme cela a été décrit précédemment pour le circuit optoélectronique 80. En fonctionnement, le circuit de modulation 58 du module maître, sous la commande du circuit de sélection 51, fait varier le potentiel à la borne I_ctrl pour transmettre des données aux modules esclaves. Les variations du potentiel à la borne I_ctrl sont reproduites aux bornes I_ctrl_in de chaque module esclave par couplage capacitif. La modulation du potentiel à la borne I_ctrl peut être de tout type, par exemple une modulation en amplitude et/ou une modulation en fréquence. Le circuit de modulation 58 de chaque module esclave reste inactif.The operation of the optoelectronic circuit 105 is as follows. The role of master module or slave module is determined as described above for optoelectronic circuit 80. In operation, modulation circuit 58 of the master module, under the control of selection circuit 51, varies the potential. to the I_ctrl terminal to transmit data to the slave modules. The variations of the potential at the I_ctrl terminal are reproduced at the I_ctrl_in terminals of each slave module by capacitive coupling. The potential modulation at the I_ctrl terminal can be of any type, for example amplitude modulation and / or frequency modulation. The modulation circuit 58 of each slave module remains inactive.

Le circuit de démodulation 60 de chaque module est adapté à recevoir les données transmises à la borne I_ctrl_in et le circuit de pilotage 62 est adapté à commander l'ouverture ou la fermeture de l'interrupteur 64 en fonction des données reçues.The demodulation circuit 60 of each module is adapted to receive the data transmitted to the terminal I_ctrl_in and the control circuit 62 is suitable for controlling the opening or closing of the switch 64 as a function of the data received.

Selon un mode de réalisation, chaque circuit de commande 46 est, en outre, adapté à moduler le potentiel à la borne I_ctrl_in. Une communication bidirectionnelle peut alors être mise en oeuvre entre le module maître et les modules esclaves. La fourniture du signal S3 du circuit de contrôle 44 au circuit de commande 46 permet de faciliter la mise en place d'un protocole de communication bidirectionnelle entre le module maître et les modules esclaves, notamment concernant les priorités d'accès au canal de communication. Un avantage du présent mode de réalisation est que la transmission de données entre les modules est réalisée par couplage capacitif et permet donc la mise en oeuvre d'une communication bidirectionnelle entre le module maître et chaque module esclave dont les performances ne dépendent pas de la position relative dans la succession de modules entre le module maître et le module esclave.According to one embodiment, each control circuit 46 is, moreover, adapted to modulate the potential at the terminal I_ctrl_in. Bidirectional communication can then be implemented between the master module and the slave modules. The supply of the signal S3 from the control circuit 44 to the control circuit 46 makes it possible to facilitate the setting up of a bidirectional communication protocol between the master module and the slave modules, in particular concerning the priorities of access to the communication channel. An advantage of the present embodiment is that the data transmission between the modules is carried out by capacitive coupling and therefore allows the implementation of a bidirectional communication between the master module and each slave module, the performance of which does not depend on the position. relative in the succession of modules between the master module and the slave module.

De façon avantageuse, il n'est pas nécessaire de stocker au préalable dans une mémoire du module maître le nombre de modules composant le circuit optoélectronique 105. En effet, chaque module esclave peut se signaler au module maître, par exemple au démarrage du circuit optoélectronique 105, la séquence d'activation des diodes électroluminescentes étant alors adaptée par le module maître en fonction du nombre de modules esclaves. Ceci permet de modifier de façon simple le nombre de modules du circuit optoélectronique 105.Advantageously, it is not necessary to store beforehand in a memory of the master module the number of modules making up the optoelectronic circuit 105. In fact, each slave module can signal itself to the master module, for example when the optoelectronic circuit is started. 105, the activation sequence of the light-emitting diodes then being adapted by the master module as a function of the number of slave modules. This makes it possible to modify in a simple manner the number of modules of the optoelectronic circuit 105.

Dans le présent mode de réalisation, l'échange de données entre le module maître et chaque module esclave est réalisé par une liaison à un seul fil. Selon un autre mode de réalisation, la transmission de données du module maître vers chaque module esclave est réalisée en utilisant une liaison bifilaire, correspondant, par exemple, à un bus I2C ou autre.In the present embodiment, the exchange of data between the master module and each slave module is carried out by a single wire link. According to another embodiment, the transmission of data from the master module to each slave module is carried out using a two-wire link, corresponding, for example, to an I 2 C or other bus.

Les figures 10 et 11 sont des figures analogues aux figures 8 et 9 respectivement d'un autre mode de réalisation d'un module 110 et d'un circuit optoélectronique 115 comprenant plusieurs exemplaires du module 110.The figures 10 and 11 are figures analogous to figures 8 and 9 respectively of another embodiment of a module 110 and an optoelectronic circuit 115 comprising several examples of module 110.

Les éléments communs entre le module 110 et le module 100 sont désignés par les mêmes références. Le module 110 comprend l'ensemble des éléments du module 100 à la différence que le module 110 comprend une borne supplémentaire MS et que le circuit de sélection 51 du module 110 est connecté à la borne MS au lieu d'être connecté à la borne CS comme cela est le cas pour le module 100.The elements common between the module 110 and the module 100 are designated by the same references. The module 110 comprises all the elements of the module 100 with the difference that the module 110 comprises an additional terminal MS and that the selection circuit 51 of the module 110 is connected to the terminal MS instead of being connected to the terminal CS as is the case for module 100.

Dans le présent mode de réalisation, la transmission de données entre le module maître et les modules esclaves peut être réalisée comme cela a été décrit précédemment pour le module 100. A titre de variante, la transmission de données entre le module maître et les modules esclaves peut être mise en oeuvre comme cela a été décrit pour le module 40 ou le module 90.In the present embodiment, the transmission of data between the master module and the slave modules can be carried out as has been described previously for the module 100. As a variant, the transmission of data between the master module and the slave modules can be implemented as has been described for module 40 or module 90.

La connexion des bornes A, K, CS, K, Vdd et Gnd de chaque module 110 est identique à ce qui a été décrit précédemment pour le module 40 en relation avec la figure 5. En outre, pour chaque module esclave, la borne MS est laissée flottante. Pour le module maître, la borne MS est reliée à la borne CS.The connection of terminals A, K, CS, K, Vdd and Gnd of each module 110 is identical to what has been described previously for module 40 in relation to figure 5 . In addition, for each slave module, the MS terminal is left floating. For the master module, the MS terminal is connected to the CS terminal.

Le circuit de sélection 51 de chaque module 40 détermine si la borne MS est laissée flottante ou à un potentiel neutre différent de GND. Si tel est le cas, le circuit de sélection 51 transmet un signal S3 d'inhibition au circuit de commande 46 et le module considéré fonctionne comme un module esclave. Lorsque la borne MS est détectée comme n'étant pas laissée flottante, le circuit de sélection 51 transmet un signal S3 d'activation au circuit de commande 46 et le module considéré fonctionne comme un module maître.The selection circuit 51 of each module 40 determines whether the terminal MS is left floating or at a neutral potential other than GND. If this is the case, the selection circuit 51 transmits an inhibition signal S3 to the control circuit 46 and the module considered operates as a slave module. When the terminal MS is detected as not being left floating, the selection circuit 51 transmits an activation signal S3 to the control circuit 46 and the module considered operates as a master module.

La figure 12 est une figure analogue à la figure 4 d'un autre mode de réalisation d'un module 120 comprenant des diodes électroluminescentes.The figure 12 is a figure similar to the figure 4 of another embodiment of a module 120 comprising light emitting diodes.

Le module 120 a la même structure que le module 40 à la différence que certains éléments sont présents en trois exemplaires. Sur la figure 12, on a ajouté l'indice "1", "2" et "3" à une référence désignant un élément du module 40 pour désigner chaque exemplaire de cet élément dans le module 120. On n'a pas représenté en figure 12 les circuits de commande de courant reliant le circuit 51 à chaque source de courant 421, 422 et 423.The module 120 has the same structure as the module 40 with the difference that certain elements are present in triplicate. On the figure 12 , we added the index "1", "2" and "3" to a reference designating an element of the module 40 to designate each copy of this element in the module 120. It is not shown in figure 12 the current control circuits connecting the circuit 51 to each current source 42 1 , 42 2 and 42 3 .

Dans le présent mode de réalisation, le module 120 comprend trois diodes électroluminescentes globales D1, D2 et D3. Les diodes électroluminescentes D1, D2 et D3 peuvent être adaptées à émettre des rayonnements lumineux à des longueurs d'onde différentes, par exemple respectivement dans le rouge, le vert et le bleu. Le circuit de pilotage 62 est adapté à commander séparément chaque interrupteur 641, 642 et 643. Le circuit de sélection 51 reçoit les signaux fournis par les capteurs 521, 522 et 523 et les signaux fournis par les capteurs 541, 542 et 543.In the present embodiment, the module 120 comprises three overall light-emitting diodes D 1 , D 2 and D 3 . The light-emitting diodes D 1 , D 2 and D 3 can be adapted to emit light radiation at different wavelengths, for example in red, green and blue respectively. The control circuit 62 is suitable for separately controlling each switch 64 1 , 64 2 and 64 3 . The selection circuit 51 receives the signals supplied by the sensors 52 1 , 52 2 and 52 3 and the signals supplied by the sensors 54 1 , 54 2 and 54 3 .

En figure 12, les éléments participant à la transmission de données du module maître vers les modules esclaves ne sont pas représentés. Ces éléments peuvent correspondre à ceux de l'un quelconque des modes de réalisation décrits précédemment pour les modules 10, 40 ou 90.In figure 12 , the elements involved in the transmission of data from the master module to the slave modules are not shown. These elements can correspond to those of any one of the embodiments described above for the modules 10, 40 or 90.

Selon un mode de réalisation, les règles de connexion des modules 120 les uns aux autres sont les mêmes que celles décrites précédemment pour les bornes A, CS et K en considérant séparément l'ensemble de bornes A1, CS1 et K1, l'ensemble de bornes A2, K2 et CS2 et l'ensemble de bornes A3, CS3 et K3, chaque ensemble étant référencé à la borne Gnd associée. Les diodes électroluminescentes globales D1 des modules 120 sont alors montées en série, les diodes électroluminescentes globales D2 sont montées en série et les diodes électroluminescentes globales D3 sont montées en série. La structure du module 120 permet, de façon avantageuse, de connecter les modules 120 de façon qu'un premier module joue le rôle de module maître pour les diodes électroluminescentes D1, qu'un deuxième module, éventuellement différent du premier module, joue le rôle de module maître pour les diodes électroluminescentes D2, et qu'un troisième module, éventuellement différent du premier module et du deuxième module, joue le rôle de module maître pour les diodes électroluminescentes D3. A titre de variante, seul le capteur 521 est présent. Dans ce cas, les trois ensembles de bornes A1, CS1 et K1, A2, K2 et CS2 et A3, CS3 et K3 sont connectés de la même façon de sorte que le même module joue le rôle de module maître pour les diodes électroluminescentes D1, D2 et D3.According to one embodiment, the rules for connecting the modules 120 to each other are the same as those described above for the terminals A, CS and K, considering separately the set of terminals A 1 , CS 1 and K 1 , l 'set of terminals A 2 , K 2 and CS 2 and the set of terminals A 3 , CS 3 and K 3 , each set being referenced to the associated terminal Gnd. The overall light-emitting diodes D 1 of the modules 120 are then connected in series, the overall light-emitting diodes D 2 are connected in series and the overall light-emitting diodes D 3 are connected in series. The structure of the module 120 advantageously makes it possible to connect the modules 120 so that a first module plays the role of master module for the light-emitting diodes D 1 , that a second module, possibly different from the first module, plays the role of master module. role of master module for the light-emitting diodes D 2 , and that a third module, possibly different from the first module and the second module, plays the role of master module for the light-emitting diodes D 3 . As a variant, only the sensor 52 1 is present. In this case, the three sets of terminals A 1 , CS 1 and K 1 , A 2 , K 2 and CS 2 and A 3 , CS 3 and K 3 are connected in the same way so that the same module plays the role master module for light emitting diodes D 1 , D 2 and D 3 .

Dans le présent mode de réalisation, la structure du module 120 est dérivée de celle du module 40, certains éléments étant présents en trois exemplaires. A titre de variante, la structure du module 120 peut être dérivée du module 110 représenté en figure 10.In the present embodiment, the structure of the module 120 is derived from that of the module 40, certain elements being present in triplicate. As an alternative, the structure of the module 120 can be derived from the module 110 shown in figure 10 .

La figure 13 représente un mode de réalisation d'un circuit optoélectronique 125 comprenant une succession de modules 130 montés en série. Dans le présent mode de réalisation, un circuit 132, externe aux modules, est relié à la borne S du module maître. Selon un mode de réalisation, le circuit 132 peut comprendre un capteur, par exemple un capteur de luminosité, ou peut comprendre un variateur, et la consigne de courant ICS fournie par le circuit 51 peut dépendre d'un signal fourni à la borne S par le capteur 132. Selon un autre mode de réalisation, le circuit 132 peut être intégré à chaque module 130. Selon un autre mode de réalisation, le circuit 132 peut comprendre une interface actionnable par un utilisateur et la séquence d'activation fournie par le circuit de contrôle 44 du module maître peut alors dépendre du signal fourni par le circuit 132. Selon un mode de réalisation, dans le cas où une communication bidirectionnelle est réalisée entre le module maître et les modules esclaves, le circuit 132 peut être connecté à l'un des modules esclaves et les signaux fournis par le circuit 132 au module esclave sont retransmis par ce module esclave au module maître. A titre de variante, chaque module 130 peut avoir une structure analogue à celle de l'un des modules 90, 100 ou 110.The figure 13 shows an embodiment of an optoelectronic circuit 125 comprising a succession of modules 130 mounted in series. In the present embodiment, a circuit 132, external to the modules, is connected to terminal S of the master module. According to one embodiment, the circuit 132 can comprise a sensor, for example a brightness sensor, or can include a variator, and the current setpoint I CS supplied by the circuit 51 can depend on a signal supplied to the terminal S by the sensor 132. According to another embodiment, the circuit 132 can be integrated into each module 130. According to another embodiment, the circuit 132 can comprise an interface that can be actuated by a user and the activation sequence provided by the user. control circuit 44 of the master module can then depend on the signal supplied by circuit 132. According to one embodiment, in the case where bidirectional communication is carried out between the master module and the slave modules, circuit 132 can be connected to the one of the slave modules and the signals supplied by the circuit 132 to the slave module are retransmitted by this slave module to the master module. As a variant, each module 130 can have a structure similar to that of one of the modules 90, 100 or 110.

La figure 14 représente un mode de réalisation d'un circuit optoélectronique 135 comprenant une succession de modules 140 montés en parallèle. Chaque module 140 peut comprendre l'ensemble des éléments du module 100 décrit précédemment en relation avec la figure 8.The figure 14 represents an embodiment of an optoelectronic circuit 135 comprising a succession of modules 140 mounted in parallel. Each 140 module can include all the elements of module 100 described previously in relation to the figure 8 .

Les bornes Vdd et A de chaque module 140 sont reliées à une source d'un potentiel de référence haut VCC. Les bornes Gnd et CS sont reliées à un potentiel de référence bas.The terminals Vdd and A of each module 140 are connected to a source of a high reference potential VCC. The Gnd and CS terminals are connected to a low reference potential.

Chaque module 140 est monté comme un module maître. Chaque module 140 est alors adapté à commander sa propre diode électroluminescente D. L'échange de données entre modules 140 peut être réalisé comme cela a été décrit précédemment pour le circuit optoélectronique 105 représenté en figure 9. Comme chaque module est un module maître, pour chaque module, la borne I_ctrl_in est reliée à la ligne conductrice 106 par le condensateur 108 et la borne I_ctrl est reliée à la ligne conductrice 106 par le condensateur 109.Each module 140 is mounted as a master module. Each module 140 is then adapted to control its own light-emitting diode D. The exchange of data between modules 140 can be carried out as has been described previously for the optoelectronic circuit 105 shown in figure 9 . As each module is a master module, for each module, the I_ctrl_in terminal is connected to the conductive line 106 by the capacitor 108 and the I_ctrl terminal is connected to the conductive line 106 by the capacitor 109.

Comme cela a été décrit précédemment, l'échange de données entre les modules peut, à titre de variante, être réalisé par une liaison bifilaire, correspondant, par exemple, à un bus I2C ou autre.As has been described previously, the exchange of data between the modules can, by way of a variant, be carried out by a two-wire link, corresponding, for example, to an I 2 C bus or the like.

Selon un mode de réalisation, les diodes électroluminescentes D des modules 140 sont adaptées à émettre de la lumière à des longueurs d'onde différentes. A titre d'exemple, le circuit optoélectronique 135 comprend trois modules 140. Les diodes électroluminescentes D de ces modules 140 peuvent être adaptées à émettre des rayonnements lumineux à des longueurs d'onde différentes, par exemple respectivement dans le rouge, le vert et le bleu. L'ensemble des modules 140 peut alors correspondre à un pixel d'affichage.According to one embodiment, the light-emitting diodes D of the modules 140 are adapted to emit light at different wavelengths. By way of example, the optoelectronic circuit 135 comprises three modules 140. The light-emitting diodes D of these modules 140 can be adapted to emit light radiation at different wavelengths, for example respectively in red, green and green. blue. The set of modules 140 can then correspond to a display pixel.

Chaque module 140 est, par exemple, adapté à modifier l'intensité lumineuse émise par la diode électroluminescente D qu'il contient en fonction de données fournies par au moins l'un des autres modules 140. La modification de l'intensité lumineuse peut être réalisée par tout type de modulation, par exemple par une modulation tout-ou-rien de l'interrupteur d'activation/ inhibition de la diode électroluminescente D ou par une modulation de l'intensité du courant fourni par la source de courant 42. Selon un mode de réalisation, l'un des modules 140 est adapté à recevoir une consigne d'une propriété du rayonnement émis par le circuit optoélectronique 135, par exemple une consigne de couleur. Le module 140 recevant la consigne transmet des données aux autres modules 140 de sorte que la propriété du rayonnement émis par l'ensemble des diodes électroluminescentes suive cette consigne. Ceci permet, de façon avantageuse, de transmettre une consigne générale au circuit électronique tandis que la régulation du rayonnement émis par chaque module 140 est réalisée directement par le module 140 considéré.Each module 140 is, for example, suitable for modifying the light intensity emitted by the light-emitting diode D that it contains as a function of data supplied by at least one of the other modules 140. The modification of the light intensity can be carried out by any type of modulation, for example by an all-or-nothing modulation of the activation / inhibition switch of the light-emitting diode D or by a modulation of the intensity of the current supplied by the current source 42. According to one embodiment, one of the modules 140 is adapted to receive a setpoint of a property of the radiation emitted by the optoelectronic circuit 135, for example a color setpoint. The module 140 receiving the instruction transmits data to the other modules 140 so that the property of the radiation emitted by all the light-emitting diodes follows this instruction. This advantageously makes it possible to transmit a general instruction to the electronic circuit while the regulation of the radiation emitted by each module 140 is carried out directly by the module 140 considered.

De façon avantageuse, dans les modes de réalisation décrits précédemment, en particulier lorsque le nombre de diodes électroluminescentes élémentaires composant la diode électroluminescente globale D est peu élevé, de préférence moins de 10, voire égal à 1, les composants électroniques utilisés pour réaliser le module 40, 90, 100, 120, 140 peuvent être des composants adaptés à des applications basse tension. Ceci permet notamment de réduire le coût de fabrication du module.Advantageously, in the embodiments described above, in particular when the number of elementary light-emitting diodes making up the overall light-emitting diode D is small, preferably less than 10, or even equal to 1, the electronic components used to produce the module 40, 90, 100, 120, 140 can be components suitable for low voltage applications. This makes it possible in particular to reduce the cost of manufacturing the module.

Des modes de réalisation particuliers ont été décrits. Diverses variantes et modifications apparaîtront à l'homme de l'art. En particulier, dans les modes de réalisation décrits précédemment, le signal S4 à partir duquel le circuit de sélection 51 du module maître fournit la séquence d'activation/inhibition des diodes électroluminescentes globales des modules correspond au potentiel à la cathode de la diode électroluminescente globale D. Toutefois, le circuit 51 peut être commandé par un autre signal, par exemple le potentiel à l'anode de la diode électroluminescente D.Particular embodiments have been described. Various variations and modifications will be apparent to those skilled in the art. In particular, in the embodiments described above, the signal S4 from which the selection circuit 51 of the master module supplies the activation / inhibition sequence of the overall light-emitting diodes of the modules corresponds to the potential at the cathode of the overall light-emitting diode D. However, the circuit 51 can be controlled by another signal, for example the potential at the anode of the light emitting diode D.

Claims (16)

  1. An optoelectronic circuit (80; 95; 105; 115; 125; 135) comprising interconnected separate elementary electronic circuits (40; 90; 100; 110; 120; 140), each elementary electronic circuit comprising:
    at least one light-emitting diode (D); and
    at least one integrated circuit chip comprising a circuit (46) for controlling the light-emitting diode capable of activating or of deactivating the light-emitting diode,
    wherein the optoelectronic circuit is intended to receive a variable supply voltage (VALIM),
    wherein each elementary electronic circuit (40; 90; 100; 110; 120; 140) comprises a control circuit (44) capable of supplying an activation or deactivation signal to each of the other elementary electronic circuits according to a selection sequence with respect to the value of the variable supply voltage (VALIM), and wherein, for each elementary electronic circuit, the circuit (46) for controlling the light-emitting diode (D) is capable of activating or inhibiting the light-emitting diode according to the activation or deactivation signal, whereby the number of activated light-emitting diodes depends on the value of the variable supply voltage (VALIM).
  2. The optoelectronic circuit of claim 1, wherein each elementary electronic circuit (40; 90; 100; 110; 120; 140) comprises in a same package said at least one light-emitting diode (D) and said at least one integrated circuit chip.
  3. The optoelectronic circuit of claim 1 or 2, wherein the integrated circuit chip of each elementary electronic circuit further comprises a communication circuit (48) containing a modulation circuit (58) capable of supplying a first modulated signal (ICS; Imod) from the activation or deactivation signal and a demodulation circuit (60) capable of supplying a second signal (S2) by demodulation of the first signal, the circuit (46) for controlling the light-emitting diode being capable of activating or of inhibiting the light-emitting diode from the second signal.
  4. The optoelectronic circuit of any of claims 1 to 3, wherein each elementary electronic circuit comprises a current source (42) coupled to the light-emitting diode (D).
  5. The optoelectronic circuit of any of claims 1 to 4, wherein the integrated circuit chip of each elementary electronic circuit further comprises a circuit (51) for detecting a master or slave state of the elementary electronic circuit when the elementary electronic circuit is in operation by the way said elementary electronic circuit is connected to the other elementary electronic circuits.
  6. The optoelectronic circuit of claim 5, wherein the elementary electronic circuit in the master state is capable of transmitting data to the other elementary electronic circuits so that the light-emitting diodes are activated randomly or according to a given succession.
  7. The optoelectronic circuit of any of claims 1 to 6, comprising a plurality of series-assembled elementary electronic circuits.
  8. The optoelectronic circuit of any of claims 1 to 6, comprising a plurality of elementary electronic circuits assembled in parallel.
  9. The optoelectronic circuit of claim 6 and of claim 4, wherein each elementary electronic circuit further comprises a first terminal (S), wherein the optoelectronic circuit comprises a sensor (132) coupled to the first terminal of one of the elementary electronic circuits, and wherein the intensity of the current supplied by the current source (42) of the master circuit depends on a third signal supplied by the sensor.
  10. The optoelectronic circuit of claim 3, wherein, for each elementary electronic circuit, the first modulated signal corresponds to a modulation of the power supply current of the light-emitting diode (D).
  11. The optoelectronic circuit of claim 3, wherein each elementary electronic circuit further comprises a second terminal (I_ctrl), and wherein the first modulated signal (Imod) corresponds to a modulated current supplied by the modulation circuit (58) to the second terminal (I_ctrl), which is different from the light-emitting diode power supply current or wherein the first modulated signal corresponds to the potential at said terminal.
  12. The optoelectronic circuit of claim 11, further comprising a third terminal (I_ctrl_in), the demodulation circuit (60) being capable of receiving the second signal (Imod) via the third terminal.
  13. The optoelectronic circuit of claim 12, wherein the third terminal (I ctrl in) of each elementary electronic circuit is coupled to a conductive line (106; 132) via a capacitor (108; 134).
  14. The optoelectronic circuit of claim 12, wherein each elementary electronic circuit further comprises a fourth terminal (I_ctrl_out) and a copying circuit coupling the third terminal and the fourth terminal and capable of supplying the demodulation circuit (60) with a copy of the current flowing between the third and fourth terminals.
  15. The optoelectronic circuit of claim 14, wherein the elementary electronic circuits are series-assembled according to a succession of elementary electronic circuits and wherein, for each elementary electronic circuit, except for the elementary electronic circuits located at the ends of the succession, the fourth terminal (I_ctrl_out) of the elementary electronic circuit is coupled to the third terminal (I_ctrl_in) of the previous elementary electronic circuit in the succession.
  16. The optoelectronic circuit of any of claims 1 to 15, wherein each elementary electronic circuit comprises less than five light-emitting diodes (D).
EP16829297.7A 2015-12-31 2016-12-29 Optoelectronic circuit comprising light emitting diodes Active EP3398410B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1563488A FR3046493B1 (en) 2015-12-31 2015-12-31 OPTOELECTRONIC CIRCUIT WITH ELECTROLUMINESCENT DIODES
PCT/FR2016/053682 WO2017115055A1 (en) 2015-12-31 2016-12-29 Optoelectronic circuit comprising light emitting diodes

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EP3398410A1 EP3398410A1 (en) 2018-11-07
EP3398410B1 true EP3398410B1 (en) 2021-06-16

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EP (1) EP3398410B1 (en)
KR (1) KR20180099710A (en)
CN (1) CN108432348B (en)
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US20020039721A1 (en) * 1996-11-26 2002-04-04 George R. Hull Pattern testing board
US20090322251A1 (en) * 2006-06-27 2009-12-31 Koninklijke Philips Electronics N.V. Large area lighting
US8110835B2 (en) * 2007-04-19 2012-02-07 Luminus Devices, Inc. Switching device integrated with light emitting device
TW200923874A (en) * 2007-11-16 2009-06-01 Aussmak Optoelectronic Corp Light emitting device
EP2088836A1 (en) * 2008-01-31 2009-08-12 Ledon Lighting Jennersdorf GmbH LED lighting system with optical communication functionality
US8255487B2 (en) * 2008-05-16 2012-08-28 Integrated Illumination Systems, Inc. Systems and methods for communicating in a lighting network
JP2010109168A (en) * 2008-10-30 2010-05-13 Fuji Electric Systems Co Ltd Led driving device, led driving method, and lighting device
DE102010034347A1 (en) * 2010-07-27 2012-02-02 Abb Ag Method and device for communication via a load line
TW201352055A (en) 2012-06-01 2013-12-16 Jinone Inc Apparatus for controlling LED sub-series
TW201431432A (en) * 2013-01-17 2014-08-01 安恩國際公司 Two-terminal current controller and related LED lighting device
US20150351202A1 (en) * 2014-05-29 2015-12-03 Technical Consumer Products, Inc. Master-slave control arrangement for a lighting fixture

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EP3398410A1 (en) 2018-11-07
WO2017115055A1 (en) 2017-07-06
FR3046493B1 (en) 2018-07-27
CN108432348A (en) 2018-08-21
FR3046493A1 (en) 2017-07-07
US20190014627A1 (en) 2019-01-10
KR20180099710A (en) 2018-09-05
CN108432348B (en) 2019-12-31
US10440788B2 (en) 2019-10-08

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