EP3388945A4 - Method of exchanging data with memory cells - Google Patents

Method of exchanging data with memory cells Download PDF

Info

Publication number
EP3388945A4
EP3388945A4 EP16872479.7A EP16872479A EP3388945A4 EP 3388945 A4 EP3388945 A4 EP 3388945A4 EP 16872479 A EP16872479 A EP 16872479A EP 3388945 A4 EP3388945 A4 EP 3388945A4
Authority
EP
European Patent Office
Prior art keywords
memory cells
exchanging data
exchanging
data
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP16872479.7A
Other languages
German (de)
French (fr)
Other versions
EP3388945C0 (en
EP3388945B1 (en
EP3388945A1 (en
Inventor
Vladimir Grigor'evich DMITRIENKO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kosuhin Vjacheslav Alekseevich
Original Assignee
Kosuhin Vjacheslav Alekseevich
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kosuhin Vjacheslav Alekseevich filed Critical Kosuhin Vjacheslav Alekseevich
Publication of EP3388945A1 publication Critical patent/EP3388945A1/en
Publication of EP3388945A4 publication Critical patent/EP3388945A4/en
Application granted granted Critical
Publication of EP3388945C0 publication Critical patent/EP3388945C0/en
Publication of EP3388945B1 publication Critical patent/EP3388945B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0207—Addressing or allocation; Relocation with multidimensional access, e.g. row/column, matrix

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
EP16872479.7A 2015-11-12 2016-10-21 Method of exchanging data with memory cells Active EP3388945B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2015148643A RU2625023C2 (en) 2015-11-12 2015-11-12 Method of exchanging data with memory cells or other devices and their addressing
PCT/IB2016/001796 WO2017098319A1 (en) 2015-11-12 2016-10-21 Method of exchanging data with memory cells

Publications (4)

Publication Number Publication Date
EP3388945A1 EP3388945A1 (en) 2018-10-17
EP3388945A4 true EP3388945A4 (en) 2019-08-28
EP3388945C0 EP3388945C0 (en) 2023-11-22
EP3388945B1 EP3388945B1 (en) 2023-11-22

Family

ID=58715185

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16872479.7A Active EP3388945B1 (en) 2015-11-12 2016-10-21 Method of exchanging data with memory cells

Country Status (7)

Country Link
US (1) US10910053B2 (en)
EP (1) EP3388945B1 (en)
JP (1) JP6815012B2 (en)
KR (1) KR102315322B1 (en)
CN (1) CN108369554B (en)
RU (1) RU2625023C2 (en)
WO (1) WO2017098319A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100097858A1 (en) * 2008-10-21 2010-04-22 Naoya Tokiwa Three-dimensionally stacked nonvolatile semiconductor memory

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Publication number Priority date Publication date Assignee Title
US3855004A (en) * 1973-11-01 1974-12-17 Us Army Method of producing current with ceramic ferroelectric device
NO316637B1 (en) * 2002-03-25 2004-03-15 Thin Film Electronics Asa Volumetric data storage device
KR100497419B1 (en) * 2002-12-23 2005-07-01 한국전자통신연구원 An information storage medium and an optical device using the medium
JP4421957B2 (en) * 2004-06-29 2010-02-24 日本電気株式会社 3D semiconductor device
CN100505268C (en) * 2005-03-21 2009-06-24 旺宏电子股份有限公司 Memory device and methods of accessing memory unit
US8031505B2 (en) * 2008-07-25 2011-10-04 Samsung Electronics Co., Ltd. Stacked memory module and system
CN101350360B (en) * 2008-08-29 2011-06-01 中国科学院上海微系统与信息技术研究所 Three-dimensional stacking non-phase-change caused resistance conversion storage apparatus and manufacturing method thereof
KR20100097858A (en) 2009-02-27 2010-09-06 홍익대학교 산학협력단 Super-resolution using example-based neural networks
JP2013070008A (en) * 2011-09-26 2013-04-18 Toshiba Corp Semiconductor device and manufacturing method of the same
US8847302B2 (en) * 2012-04-10 2014-09-30 Sandisk Technologies Inc. Vertical NAND device with low capacitance and silicided word lines
US9208883B2 (en) * 2013-08-23 2015-12-08 Sandisk Technologies Inc. Three-dimensional NAND non-volatile memory devices with buried word line selectors
CN103680640B (en) * 2013-12-11 2017-03-15 北京时代民芯科技有限公司 A kind of laser analog single particle effect back of the body irradiation testing method of memory circuitry
KR102192950B1 (en) * 2013-12-19 2020-12-18 에스케이이노베이션 주식회사 Non-volatile memory device and method for fabricating the same
US20160188495A1 (en) * 2014-12-26 2016-06-30 Intel Corporation Event triggered erasure for data security

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100097858A1 (en) * 2008-10-21 2010-04-22 Naoya Tokiwa Three-dimensionally stacked nonvolatile semiconductor memory

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YUE BAI ET AL: "Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory", SCIENTIFIC REPORTS, vol. 4, no. 1, 1 May 2015 (2015-05-01), pages 1 - 7, XP055389152, DOI: 10.1038/srep05780 *

Also Published As

Publication number Publication date
EP3388945C0 (en) 2023-11-22
EP3388945B1 (en) 2023-11-22
RU2015148643A (en) 2017-05-15
US20180350435A1 (en) 2018-12-06
CN108369554A (en) 2018-08-03
KR102315322B1 (en) 2021-10-21
WO2017098319A8 (en) 2019-05-16
EP3388945A1 (en) 2018-10-17
US10910053B2 (en) 2021-02-02
WO2017098319A1 (en) 2017-06-15
JP2019507456A (en) 2019-03-14
KR20180091837A (en) 2018-08-16
CN108369554B (en) 2022-04-15
JP6815012B2 (en) 2021-01-20
RU2625023C2 (en) 2017-07-11

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