EP3363054A1 - Verfahren zur herstellung einer fotovoltaikzelle mit einem heteroübergang - Google Patents
Verfahren zur herstellung einer fotovoltaikzelle mit einem heteroübergangInfo
- Publication number
- EP3363054A1 EP3363054A1 EP16784238.4A EP16784238A EP3363054A1 EP 3363054 A1 EP3363054 A1 EP 3363054A1 EP 16784238 A EP16784238 A EP 16784238A EP 3363054 A1 EP3363054 A1 EP 3363054A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- amorphous silicon
- hydrogenated amorphous
- silicon layer
- layer
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 80
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 21
- 238000005468 ion implantation Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 31
- 229910052787 antimony Inorganic materials 0.000 claims description 12
- 229910052785 arsenic Inorganic materials 0.000 claims description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 9
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 9
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical group [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 9
- 238000002513 implantation Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the field of the invention is that of silicon heterojunction photovoltaic cells and methods of manufacturing such photovoltaic cells.
- FIG. 1 schematically represents a photovoltaic cell with heterojunction of the prior art.
- a hydrogenated amorphous silicon layer i) a-Si-H is deposited on each of the faces of a crystalline silicon substrate (n) c-Si.
- a doped hydrogenated (n) or (p) "(n) a Si-H” or "(p) a Si-H” amorphous silicon layer is then formed on the surface of each of the hydrogenated amorphous silicon layers (i). a-Si-H.
- a conductive transparent oxide layer TCO is then deposited on each of the doped hydrogenated amorphous silicon (n) or (p) "(n) a Si-H” or “(p) a Si-H” layers. Finally, metal contacts MC are formed on each of the conductive transparent oxide TCO layers.
- the doped (n) or (p) hydrogenated amorphous silicon layers are formed during a plasma-assisted chemical vapor deposition (PECVD) step in which a doping gas is introduced to boost the layers of hydrogenated amorphous silicon.
- PECVD plasma-assisted chemical vapor deposition
- the doping gas introduced is a phosphorus-based precursor such as phosphine.
- the doping gas introduced is a boron precursor such as diborane.
- the invention aims to overcome the disadvantages of the state of the art by proposing a method of manufacturing a heterojunction solar cell which has improved properties.
- the method according to the invention proposes to provide the doping ions in the hydrogenated amorphous silicon layer by ion implantation through the transparent conductive oxide layer. This makes it possible to limit the damage at the interface between the conductive transparent oxide layer and the crystalline silicon layer due to the ion implantation while improving the electrical and / or optical properties of the transparent conductive oxide.
- one aspect of the invention relates to a method for manufacturing a heterojunction photovoltaic cell comprising the following steps:
- the method is therefore particularly advantageous in that it makes it possible to improve the properties of the transparent conductive oxide while retaining good passivation at the interface between the hydrogenated amorphous silicon layer and the crystalline silicon layer and good conductivity. for the photovoltaic cell thus formed.
- the fact of implanting the doping elements by ion implantation through the conductive transparent oxide layer, then annealing the stack obtained makes it possible to limit the degradation of the interface between the hydrogenated amorphous silicon layer and the layer of crystalline silicon.
- the solar cell thus obtained thus has an open circuit voltage and a high form factor due to the good conductivity of the amorphous layer.
- implanting the doping elements through the conductive transparent oxide layer improves the optical and electrical properties of the transparent conductive oxide layer.
- the method according to the invention may also have one or more of the following characteristics taken individually or in any technically possible combination.
- the conductive transparent oxide is zinc oxide (ZnO), one of the following elements being implanted in the hydrogenated amorphous silicon layer during the doping step: B, In, Al, Ga, As, Sb, since they make it possible to dope the layers of hydrogenated amorphous silicon and to improve the properties of ZnO and preferably one of the following elements: B, As, Sb. Indeed, these doping elements are the most effective for doping the hydrogenated amorphous silicon, and to improve the electrical and / or optical properties of ZnO.
- ZnO zinc oxide
- the conductive transparent oxide is tin dioxide (Sn0 2 ), one of the following elements being implanted in the hydrogenated amorphous silicon layer during the doping step: Sb, As. each of these doping elements makes it possible to effectively dope the hydrogenated amorphous silicon and to improve the electrical and / or optical properties of the tin dioxide.
- the conductive transparent oxide is cadmium oxide (CdO), one of the following elements being implanted in the hydrogenated amorphous silicon layer during the doping step: In.
- this element Dopant effectively dopes hydrogenated amorphous silicon and improves the electrical properties of cadmium oxide.
- the conductive transparent oxide layer has a thickness of between 80 nm and 120 nm. Indeed, such a thickness is sufficient to protect the interface between the hydrogenated amorphous silicon layer and the crystalline silicon layer, while being sufficiently fine so that the hydrogenated amorphous silicon layer can be doped through the transparent conductive oxide.
- the ion implantation is carried out at an energy of between 15 kV and 300 kV.
- the ion implantation energy is sufficient for the doping elements to reach the hydrogenated amorphous silicon layer, but not so great that they degrade the interface between the hydrogenated amorphous silicon layer and the crystalline silicon substrate. .
- element B is implanted at an energy of between 15 kV and 35 kV and preferably between 17 kV and 32 kV.
- the element As is implanted at an energy of between 200 and 250 kV, and preferably between 210 and 250 kV.
- the element Sb is implanted at an energy of between 250 and 300 kV, and preferably between 260 and 290 kV,
- the ion implantation is performed with a dose of doping ions of between 5.10 15 and 5.10 17 cm "2.
- the dose of doping ions is sufficient for the doping elements reach the layer of hydrogenated amorphous silicon, but not too great in order not to degrade the interface between the hydrogenated amorphous silicon layer and the crystalline silicon substrate.
- the method further comprises a step of producing at least one metal contact on the transparent conductive oxide layer.
- Boosting the hydrogenated amorphous silicon layer through the conductive transparent oxide layer improves conduction between the metal contact and the transparent conductive oxide layer.
- the hydrogenated amorphous silicon layer has a thickness of between 5 and 30 nm.
- a second aspect of the invention relates to a photovoltaic cell comprising:
- a stack comprising:
- the transparent conductive oxide layer therefore comprises at least one same implanted doping element, as the underlying hydrogenated amorphous silicon layer, which makes it possible to limit the damage at the interface between the hydrogenated amorphous silicon layer and the crystalline silicon due to ion implantation while improving the electrical and / or optical properties of the transparent conductive oxide.
- the photovoltaic cell may also have one or more of the following features taken individually or in any technically possible combination.
- the doping element has a concentration that is not constant through the depth of the stack.
- the doping element therefore has a particular profile in these layers: its concentration is not constant in the depth of the stack.
- the conductive transparent oxide is zinc oxide (ZnO), one of the following elements being implanted in the hydrogenated amorphous silicon layer and in the transparent conductive oxide layer: B, In, Al, Ga, As, Sb, and preferably one of the following: B, As, Sb.
- ZnO zinc oxide
- these doping elements are the most effective for doping the hydrogenated amorphous silicon and to improve the electrical and / or optical properties of ZnO.
- the conductive transparent oxide is tin dioxide (SnO 2), one of the following elements being implanted in the hydrogenated amorphous silicon layer and in the transparent conductive oxide: Sb, As. each of these doping elements makes it possible to effectively dope the hydrogenated amorphous silicon and to improve the electrical and / or optical properties of the tin dioxide.
- the conductive transparent oxide is cadmium oxide (CdO), one of the following elements being implanted in the amorphous silicon layer
- this doping element makes it possible to effectively dope the hydrogenated amorphous silicon and to improve the electrical properties of the cadmium oxide.
- the conductive transparent oxide layer has a thickness of between 80 nm and 120 nm. Indeed, such a thickness is sufficient to protect the interface between the hydrogenated amorphous silicon layer and the crystalline silicon layer, while being sufficiently fine so that the hydrogenated amorphous silicon layer can be doped through the transparent conductive oxide.
- the hydrogenated amorphous silicon layer has a thickness of between 5 and 30 nm.
- FIG. 1 a schematic representation of a heterojunction photovoltaic cell of the prior art
- FIGS. 2a to 2e a schematic representation of the steps of a method according to an embodiment of the invention
- FIG. 3 represents the evolution of the concentration of doping element in the photovoltaic cell obtained by the method of FIGS. 2a to 2e.
- FIGS. 2a to 2e A method of manufacturing a heterojunction photovoltaic cell according to an embodiment of the invention will now be described with reference to FIGS. 2a to 2e.
- the method comprises a first step 101 for depositing a hydrogenated amorphous silicon layer 2 on a first face of a crystalline silicon substrate 1.
- the hydrogenated amorphous silicon layer 2 has a thickness of between 5 nm and 30 nm.
- the method then comprises a step 102 for depositing a conductive transparent oxide layer 3 on the hydrogenated amorphous silicon layer 2.
- the conductive transparent oxide layer preferably has a thickness of between and 120 nm.
- the transparent conductive oxide is preferably one of the following: ZnO, Sn0 2 , CdO.
- the method then comprises a step 103 for doping the hydrogenated amorphous silicon layer 2 by ion implantation, through the transparent conductive oxide layer 2.
- the doping elements implanted during this step are preferably chosen from the following list: Al, Ga, B, In, Sb, As.
- the doping elements are chosen both as a function of the doping that is desired (n or p) for the hydrogenated amorphous silicon layer and function of the transparent conductive oxide which covers it.
- the doping element can be the one of the following: Sb, As.
- the doping element may be one of the following : B, In, Al, Ga,
- the doping element can be one of the following: Sb, As.
- the doping element may be indium, In.
- the implantation energy is a function of the doping element.
- the implantation energy is preferably between 15 and 35 kV, and more preferably between 17 and 32 kV.
- the implantation dose is preferably between 200 and 250 kV, and more preferably between 210 and 250 kV.
- the implantation energy is preferably between 250 and 300 kV and more preferably between 260 and 290 kV.
- the implantation dose is preferably between 5.10 15 and 5.10 17 cm "2.
- the process then comprises an annealing step 104 in the course of which the stack formed at the end of the ion implantation step is annealed at a temperature of between 150 ° C. and 350 ° C. for a duration between 5 minutes and 3 hours.
- the annealing step 104 is performed at a fixed value temperature.
- the ramps to reach the annealing temperature are very short. The temperature can thus go from 0 to 300 ° C in a few seconds. The same process with long ramps would also work.
- the method then comprises a step of cooling the sample so that the sample is at room temperature. This cooling is obtained naturally in the air.
- the method may then comprise a step 105 for forming metal contacts 4 on the transparent conductive oxide layer 3.
- the photovoltaic cell shown in FIG. 2e is then obtained.
- This photovoltaic cell is particularly remarkable in that the same doping element is implanted both in the hydrogenated amorphous silicon layer (2) and in the transparent conductive oxide layer (3), which makes it possible to limit the damage to the interface between the hydrogenated amorphous silicon layer and the crystalline silicon layer due to the ion implantation while improving the electrical and / or optical properties of the transparent conductive oxide.
- the doping element has a concentration that is not constant across the depth of the stack formed by the hydrogenated amorphous silicon layer (2) and in the transparent conductive oxide layer (3).
- the doping element therefore has a particular profile in these layers: its concentration is not constant in the depth of the stack.
- the profile of the doping element in the stack is shown more precisely in FIG. 3. As shown in this figure, the profile of the doping element is particularly remarkable in that the implanted dopant concentration varies as a function of the depth. which one is in the stack.
- the doping element concentration varies both in the conductive transparent oxide layer and in the silicon layer hydrogenated amorphous. Variations in the doping element concentration are continuous in the transparent conductive oxide layer. The variations in the doping element concentration are continuous in the hydrogenated amorphous silicon layer.
- the doping element concentration increases to a maximum as one travels through the conductive transparent oxide layer from the surface of the conductive transparent oxide layer to the hydrogenated amorphous silicon layer. The maximum concentration of doping element is in the transparent conductive oxide layer.
- the concentration of doping element then decreases continuously, when moving from the maximum towards the substrate.
- the concentration decreases continuously in the hydrogenated amorphous silicon layer.
- a single face of the substrate is covered with a doped hydrogenated amorphous silicon layer, a conductive transparent oxide layer and metal contacts.
- a second face of the substrate could also be covered with a layer of doped hydrogenated amorphous silicon, a transparent conductive oxide layer and metal contacts, by implementing the method according to the invention or by implementing another process.
- the doping step could take place not just after the step of depositing the transparent conductive oxide layer, but after the step of forming the metal contacts, which makes it possible to change the optical properties of the Transparent oxide conductive keeping good electrical properties under contact.
- the invention can also be applied to the manufacture of a hybrid tandem photovoltaic cell, combining a silicon-based heterojunction with a cell based on perovskite material.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1559909A FR3042645B1 (fr) | 2015-10-16 | 2015-10-16 | Procede de fabrication d'une cellule photovoltaique a heterojonction |
PCT/FR2016/052473 WO2017064384A1 (fr) | 2015-10-16 | 2016-09-29 | Procede de fabrication d'une cellule photovoltaique a heterojonction |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3363054A1 true EP3363054A1 (de) | 2018-08-22 |
Family
ID=54708024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16784238.4A Withdrawn EP3363054A1 (de) | 2015-10-16 | 2016-09-29 | Verfahren zur herstellung einer fotovoltaikzelle mit einem heteroübergang |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3363054A1 (de) |
FR (1) | FR3042645B1 (de) |
TW (1) | TW201725750A (de) |
WO (1) | WO2017064384A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11588071B2 (en) | 2018-10-24 | 2023-02-21 | Newsouth Innovations Pty Limited | Method for improving the performance of a heterojunction solar cell |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4222992B2 (ja) * | 2004-09-29 | 2009-02-12 | 三洋電機株式会社 | 光起電力装置 |
KR20110071375A (ko) * | 2009-12-21 | 2011-06-29 | 현대중공업 주식회사 | 후면전계형 이종접합 태양전지 및 그 제조방법 |
US9306106B2 (en) * | 2012-12-18 | 2016-04-05 | International Business Machines Corporation | Monolithic integration of heterojunction solar cells |
FR3007200B1 (fr) * | 2013-06-17 | 2015-07-10 | Commissariat Energie Atomique | Cellule solaire a heterojonction de silicium |
-
2015
- 2015-10-16 FR FR1559909A patent/FR3042645B1/fr not_active Expired - Fee Related
-
2016
- 2016-09-29 EP EP16784238.4A patent/EP3363054A1/de not_active Withdrawn
- 2016-09-29 WO PCT/FR2016/052473 patent/WO2017064384A1/fr active Application Filing
- 2016-10-14 TW TW105133232A patent/TW201725750A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
FR3042645B1 (fr) | 2019-07-12 |
WO2017064384A1 (fr) | 2017-04-20 |
FR3042645A1 (fr) | 2017-04-21 |
TW201725750A (zh) | 2017-07-16 |
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