EP3317901A1 - Module photovoltaïque optimisé avec réseau de dérivation - Google Patents

Module photovoltaïque optimisé avec réseau de dérivation

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Publication number
EP3317901A1
EP3317901A1 EP16733395.4A EP16733395A EP3317901A1 EP 3317901 A1 EP3317901 A1 EP 3317901A1 EP 16733395 A EP16733395 A EP 16733395A EP 3317901 A1 EP3317901 A1 EP 3317901A1
Authority
EP
European Patent Office
Prior art keywords
bypass network
bypass
network
voltage
processing unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16733395.4A
Other languages
German (de)
English (en)
Inventor
Anton Naebauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP3317901A1 publication Critical patent/EP3317901A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a photovoltaic module with at least one bypass network with data processing unit, a bypass element with a data processing unit for a photovoltaic module and a photovoltaic module with a front glass and a back glass with at least one bypass network.
  • the Texas Instruments LM 74611 Smart Bypass Diode uses an N-Channel MOSFET as an additional power switch, which operates in inverse mode when the bypass is active.
  • the drain is negative to source.
  • the source is connected to Body, which ensures that the body diode of the MOSFET is disabled inactive bypass and operated in the flow direction with active bypass. If current flows through the active bypass network when the circuit breaker is switched off, there is a voltage drop (typically 0.4 ... 0.7 V) across the body diode of the MOSFET, which is sufficient to start a charge pump and thus an energy store to load.
  • the power switch is turned on, so that the absolute value of the voltage drop across the bypass network is very low. This small voltage drop is no longer sufficient to operate the charge pump, so that the charge of the energy storage decreases again. If, in the active working area, the energy of the energy store falls below a certain limit, the additional power switch is switched off again and the voltage across the bypass network rises again. Then the current flows through the body diode of the MOSFET and the cycle starts again.
  • WO 2011023732 A2 discloses a bypass and protection circuit for a solar module comprising an input for connecting the solar module, an output, a bypass element connected in parallel with the output, and a separation element connected between the input and the output Output is switched and configured to control the connection between the input and the output.
  • the isolation element is configured to control a connection between the input and the output depending on whether the solar module associated with the circuit is completely or partially shaded, or whether the solar module associated with the circuit is to be turned on or off.
  • DE102005036153A1 discloses a protective switching device for a solar module in which a plurality of solar cells operating in normal operation and in the case of shading are connected in series. At least one controllable electrical switching element which serves as a bypass element is connected with its switching path parallel to the plurality of solar cells.
  • a supply circuit provides a control voltage for driving the control electrode of the bypass element, wherein an isolating circuit is provided for blocking the over the switching path of the bypass element in normal operation lying voltage to the supply circuit and for switching over the switching path in Abschattungsfall at least one solar cell lying voltage to the supply circuit ,
  • DE102008000504A1 discloses a method for theft detection of at least one PV module of a PV system.
  • the PV system comprises at least a parallel peeled ⁇ th string of series-connected PV modules for providing a field voltage, wherein the PV modules in turn comprise a plurality of series-connected PV cells.
  • anti-parallel bypass diodes are provided. It is in a brineinspeise vulgar, in particular evening and at night, one at the connected at least with respect to the field voltage negative test voltage a PV string line ⁇ comport to a test current through the bypass diodes. An anti-theft message is automatically output if the test current and / or the test voltage changes significantly.
  • the invention is based on the object to improve the functionality of a bypass network over a smart bypass diode and to extend the functionality to an application during the day and at night.
  • the object is achieved by a photovoltaic module with at least one bypass network with data processing Unit.
  • the data processing unit in conjunction with a string monitoring server provided for at least one entire string of modules, enables easy and cost-effective detection of circuit disturbances, even in non-illuminated PV modules at night.
  • the bypass network includes a parallel connection of a negative voltage across the bypass limiting component, an additional power switch and an input of a DC-DC converter.
  • the bypass network can permanently assume a first active state in the active area if the current through the bypass network is below the trigger current. In the first active state, the additional power switch is not turned on. In the first active state, further, a significant current flows through the bypass network.
  • the DC-DC converter is capable of powering the data processing unit belonging to the bypass network if the voltage across the bypass network becomes more negative than the start-up voltage (Ustart) of the DC-DC converter ,
  • the data processing unit controls, if necessary, the additional circuit breaker.
  • the additional circuit breaker can be supplied with energy.
  • the power switch may be turned on in a second active region.
  • Trigger current may be understood to “trigger” switching from the first to the second active region.
  • the bypass network may permanently assume a first state.” In this first state, permanent operation of the bypass network will not overload it.
  • a significant current may be understood to mean that the current is sufficient to supply at least the data processing unit.
  • the bypass network can have a characteristic network in parallel.
  • the characteristic-forming network may consist of a series circuit of resistor and Schottky diode.
  • the data processing unit of the bypass network may include a wired digital communication interface. The wired digital communication interface allows the data processing unit of the bypass network to exchange information with the string monitoring server.
  • the data processing unit of the bypass network may include a wireless digital communication interface.
  • the data processing unit of the bypass network can exchange information with the string monitoring server via the wireless digital communication interface.
  • the bypass network may further include a module voltage sensor. Sensor readings can be sent to the string monitoring server on irradiated cells via the wired digital or wireless digital communication interface.
  • the object is achieved by a bypass element with a data processing unit for a photovoltaic module according to the first aspect.
  • the bypass network includes a parallel connection of a component limiting the negative voltage across the bypass network, an additional circuit breaker, and the input of a DC-DC converter.
  • the bypass network can permanently assume a first active state in the active area if the current through the bypass network is below the trigger current. In the first active state, the additional power switch is not turned on. In the first active state, a significant current flows through the bypass network.
  • the DC-DC converter is able to supply power to the data processing unit belonging to the bypass network if the voltage across the bypass network becomes more negative than the start-up voltage (Ustart) of the DC-DC converter.
  • the data processing unit controls, if necessary, the additional circuit breaker.
  • the object is achieved by a photovoltaic module with a front glass and a back glass with at least one bypass network.
  • a photovoltaic module with a front glass and a back glass with at least one bypass network.
  • On the inside of the back glass reflective strips are applied.
  • the reflective stripes form the pattern of a grid. Through gaps between adjacent cells, light strikes the reflective stripes.
  • the reflective stripes reflect the light so that the light is not lost for power generation. With a good chance, the light will be directed to a cell and contribute to the generation of electricity.
  • the reflective stripes fen have a good electrical conductivity.
  • the reflective strips are used to carry electricity to the bypass network.
  • the photovoltaic module may include a bypass network according to the second aspect.
  • the bypass network may include an additional electrical connection for the power supply.
  • the grid of the conductive strips may be selectively interrupted at several points, so that two separate current paths to the bypass network may be present. The two separate current paths may be from a module electrical connection to the bypass network.
  • Fig. 1 PV string
  • FIG. 2 shows an exemplary characteristic of a partial string
  • FIG. 4 shows an exemplary characteristic of a partial string with a bypass diode
  • Fig. 6 PV string with bypass network
  • FIG. 7 shows work areas of a bypass network in the case of a bypass diode
  • FIG. 8 shows work areas of a bypass network in the case of a smart PV bypass
  • FIG. 9 Work areas of a bypass network of the module according to the invention.
  • FIG. 10 shows a block diagram of a possible implementation of the bypass network;
  • Figure 11 shows two versions of bypass network PV modules connected once with an additional line and once via the conductive grid
  • Fig. 12 Construction of glass-glass modules with well-reflecting and electrically good conducting strips, which are mounted on the inside of the back glass;
  • FIG. 13 shows a conductive grid in which two separate current paths lead from one terminal of a partial string to the bypass network.
  • a string In photovoltaics, a series connection of many solar cells (PV cells) is referred to as a string (FIG. 1).
  • a string comprises at least one cell, but may often include more than 1000 cells connected in series.
  • Such a long string is realized for example by a series circuit of about 10-60 modules, each with 20-100 series-connected cells.
  • a part of a long string a substring with, for example, 20 cells connected in series, is considered.
  • FIG. 2 roughly shows the characteristic curve of such a partial ring which, for example, has an open-circuit voltage U 0 c of approximately 10 V and has a short-circuit current I sc of approximately 10 A.
  • U 0 c open-circuit voltage
  • I sc short-circuit current
  • Photovoltaic modules typically incorporate bypass diodes, so that in the case of reduced power of cells in a substring, the current is partially bypassed around these cells (bypass case). This limits the yield losses of cells with reduced power and prevents cells with under-performance (which do not generate enough power) from converting too much power into heat.
  • FIG. 3 where three series-connected partial strings each having a parallel bypass diode are to be seen, and wherein the middle substring is shaded, so that the current I PV , i is significantly lower than that of the cells of this string PV , i and I PV , 3), which is also illustrated by the line widths of the arrows. With the middle string, a large part of the current (I B p, 2) flows past the string, through the associated bypass Diode, which prevents a too high negative voltage being built up across the middle string.
  • Fig. 4 shows the characteristic of a Tei Istrings the one bypass diode is connected in parallel. It can be clearly seen that the negative voltage (and thus the electrical loss in this string) remains limited even at high currents. For example, by means of a suitable diode, the negative voltage across the substring can be limited to an absolute value of approximately 0.5V. PV modules typically use silicon-based semiconductor diodes. Since, in the case of the bypass diodes, a low through-voltage is desired in the bypass case (in which the diodes are poled in the conducting direction), Schottky diodes, which are characterized by a small voltage drop in the passage region, are frequently used for this purpose ,
  • bypass diode described represents a simple case of a bypass network and fulfills the most important function, improving the performance of the solar module when parts of the module are shaded, or when the solar module from outside a higher current is impressed as the PV cells can generate.
  • This bypass network is always connected in parallel to a series connection of several solar cells, this combination being referred to in this document as a partial string with a bypass.
  • a solar module may also comprise a plurality of bypass networks, wherein in principle it is also possible for cells of a module to belong to several partial strings with parallel bypass.
  • FIG. 5 shows several examples of how partial bypass strings may be formed in a solar module.
  • the plus pole of the bypass network is connected to the plus pole of the power generating sub-string
  • the minus pole of the bypass network is connected to the minus pole of the power generating sub-string.
  • a substring may also be formed by the parallel connection of multiple groups of serially interconnected cells.
  • the current direction (I BP at bypass and I PV at the solar cell) is defined in both the solar cells and the bypass network so that a positive current represents a current flowing out of the positive pole.
  • the bypass network can be made up of several components and also take over useful functions in addition to the described functions is that the functions are largely implemented by integrated circuits in order to realize the functions cost-effectively.
  • bypass network At the positive pole of the bypass network (cathode of the bypass diode) is a positive voltage and the negative pole of the bypass network (anode of the bypass diode) is a negative voltage.
  • the bypass network is not active. Only a small parasitic current flows through the bypass network.
  • the cell string connected in parallel to the bypass network generates electrical energy that can be released.
  • Work area 200 Bypass network operates in the active area (characteristic curve in the 2nd quadrant):
  • the current impressed from the outside of the parallel connection of cell string and bypass network is greater than the current generated by the cell string. This causes the excess current to flow through the bypass network.
  • the positive pole of the bypass network (cathode of the bypass diode) has a negative voltage and the negative pole of the bypass network (anode of the bypass diode) has a positive voltage.
  • the bypass network is active. It flows through the bypass network.
  • the cell string connected in parallel to the bypass network becomes an energy consumer.
  • the bypass network limits the negative voltage across the parallel string of cells and thus also the electrical loss that occurs in the cells. At the same time, this reduces the electrical stress on the cells in the substring and avoids hotspots.
  • the diodes or Schottky diodes commonly used today are in some cases replaced by a combination of a controller and an additional circuit breaker (usually a MOSFET) added so that when active bypass network compared to conventional diodes significantly lower absolute voltage drop occurs (typically some 10 mV compared to several 100 mV). Since the resulting low absolute value of the voltage drop across the bypass Network is not sufficient to provide the controller directly with energy and to provide the energy required to control the additional circuit breaker in a simple way, the energy supply must be made possible by additional measures.
  • a controller usually a MOSFET
  • the Texas Instruments LM 74611 Smart Bypass Diode uses an N-channel MOSFET as an extra power switch that operates in inverse mode when the bypass is active (drain negative to source (source connected to body)) Body-MOSFET is disabled in work area 100 (bypass inactive) and is operating in flow area 200 in active area (active bypass)).
  • US 2009/0184746 AI also describes a similar method of providing power to the controller and power switch.
  • a typical smart bypass diode instead of the work area 200 described above, there are at least the two working areas described below, the associated characteristic curves of which can be seen in FIG. 8:
  • Bypass network is active (working in II quadrant) with the additional bypass switch turned on: There is a negative voltage at the positive pole of the bypass network and a positive voltage at the negative pole of the bypass network. Above the bypass network, only a very small absolute voltage (typically some 10 mV) drops off, which is insufficient to operate the circuit with which the energy store is filled. The power that is converted into heat in this work area is relatively low.
  • the voltage drop across the bypass network is determined by the voltage-limiting diode present in the bypass network, and the absolute value typically rises to a few 100 mV, allowing charging of an energy store via a charge pump.
  • the power that is converted into heat in this work area is relatively high. If the additional switch is formed by an N-channel MOS transistor as described above, the voltage-limiting diode is the body diode of the N-channel MOS transistor.
  • the time in the working area 210 is significantly greater than the time in the working area 220 (for example by a factor of 50).
  • the additional bypass switch is switched on as long as possible and switched off as short as possible.
  • FIG. 9 the working areas of the bypass network according to the invention for the module according to the invention are explained.
  • the working area 100 which applies when the voltage across the bypass network is positive, is unchanged from FIG. 8 and thus already explained.
  • the bypass network is not active, there is no significant current flowing through the bypass network.
  • the associated characteristic 100 is in the IV. Quadrant.
  • the DC-DC converter and the additional circuit-breaker should be designed so that no significant current is absorbed when the voltage at the bypass network is positive.
  • it is advantageous to use for the additional power switch an N-channel MOSFET which is turned off in the work area 100 and which operates in inverse mode in the active area of the bypass network. This makes it possible to use the body diode of the MOSFET as the device limiting the negative voltage across the bypass.
  • the network With negative voltage across the bypass network, the network is active and there are two characteristic branches, both in the II. Quadrant (negative voltage and positive current through the bypass network).
  • the first characteristic branch describes the working area 210 with the additional circuit breaker switched on.
  • the second characteristic load describes the behavior when the circuit breaker is switched off, which is subdivided into several work areas 221, ... 225 for purposes of illustration. Starting from voltage 0 in the negative direction comes first work area 221, in which virtually no significant currents flow through the bypass network. This is followed by work area 222, in which the input current of the DC-DC converter substantially determines the current through the bypass network. For example, the transition between region 221 and 222 could be 50 ... 150 mV. In particular, in this area, the current through the component which limits the negative voltage (this is usually the body diode of the working as an additional power switch MOSFET) is significantly lower.
  • the DC-DC converter must be designed to operate at very low negative voltages. For example, the transition from region 222 to region 223 could be at -150 to 300mV. Thus, in the area 223, the function of the data processing unit is ensured by the power supply.
  • the DC-DC converter may additionally comprise an energy store 34.
  • the DC-DC converter should preferably generate at its output a voltage in the range of 5... 15 V, which is sufficient to supply the data processing unit 36 and in particular sufficient to switch on the power switch 30 in such a way that it is switched on even at high Streaming has the lowest possible electrical losses.
  • the current through the voltage-limiting component usually the body diode of the MOSFET
  • the current through this diode represents the substantial portion of the current through the bypass network.
  • the transition between 223 and 224 may take place at -300 to 500 mV.
  • a characteristic network 32 can be added by parallel connection to the bypass network. This is advantageous when the series connection of many PV modules is present, and in non-illuminated modules, the characteristic of the series connection of modules is evaluated. If a characteristic-defining network ensures that all modules have bypass networks with known, well-reproducible characteristics, more precise conclusions can be drawn from the characteristic curve of the string. In addition, the characteristic curve can be brought into an advantageous form, so that there is a good reproducible relationship between current and voltage.
  • the characteristic-forming network 32 can consist, for example, of a series connection of a resistor and a Schottky diode with a very low through-voltage (of, for example, 150 mV). This ensures that current only flows when the bypass network is operating in the active area.
  • the I (U) characteristic is then significantly influenced by the resistance in a certain range.
  • the characteristic-forming network can also record a higher current than the DC-DC converter, in particular in the working area 222, and thus also significantly influence the characteristic curve.
  • theft monitoring works in collaboration with the string monitoring server at night as follows. If all modules are unlit and do not provide power, the string monitoring server impresses the string with a positive current below the trigger current of the bypass network, which causes the respective bypass network to go into the first active state if the substrings are unlighted becomes. If operated in the range 222, 223 or 224, by evaluating the voltage drop across the string, a disturbance in the shading of the modules in the string can be detected (for example, complete electrical break or unexpected voltage across the string). If an unexpectedly high level of interference is detected, an alarm can be triggered.
  • each Tei Istring (or module)
  • a negative voltage of, for example, about 500 mV is required.
  • a negative supply voltage of approx. 30 V is required for the entire string in comparison to the normal string voltage.
  • the circuit in the string monitoring server which monitors a whole string both during the day and at night, must therefore be able to supply the strings that supply several kW of power at a voltage level of several 100V at night with a current of some nnA and a negative voltage of a few 10V.
  • the data processing unit can make more complex signal processing and in particular be provided with a wireless or wired communication interface over which the string monitoring server (which is also provided with a corresponding communication interface) can be communicated.
  • the string monitoring server which is also provided with a corresponding communication interface
  • each module could be individually addressed and activated with individual secret codes (depending on the serial number and time).
  • each bypass network could include, for example, a Zigbee router or a Zigbee end device.
  • the associated Zigbee Coordinator could therefore be part of the communication interface of the string monitoring server. If the bypass network is provided with a digital publication interface, other attractive functions can be realized with little additional effort. The bypass network could then be provided with additional functions that work when the substrings release energy, ie when the conventional ones Bypass networks are not active.
  • bypass network determines the voltage of a substring (or of a PV module) and forwards it via the communication interface to the string monitoring server. This is a great help in troubleshooting solar farms, as it usually measures the current of each string and thus the current of each module in the string.
  • the voltage of the individual modules has been considerably more difficult to determine, so that a module-integrated voltage measurement would be very helpful. In particular, it is thus very easy to identify defective or poorly working PV modules in a solar park.
  • Other interesting features include:
  • FIG. 10 shows the block diagram of a realization of the bypass network.
  • the characteristic-forming network 32 is still included.
  • an energy storage 34 is still provided (capacitor).
  • a wireless Kom ⁇ tions interface has been provided with an antenna 37 38th The energy flow from the DC-DC converter to the data processing unit is illustrated by the arrow 35.
  • a development of the invention relates to the electrical interconnection of the bypass network within the PV module.
  • the bypass network requires ever an electrical ⁇ cal connection to the negative pole and the positive pole of the parallel partial string.
  • the plus and minus terminals are not always very close to each other, so that at least a more or less long electrical line is required, which is also a high current (typical currents of a cell today at approx 9A).
  • the module efficiency be improved by the fact that light incident on the module from the front and in the space between two adjacent cells (and near the edges of marginal cells) on the module return debit (and glass-glass modules with high probability the back of the module emerges again) is reflected as well as possible, so that there is a good probability that the light is redirected via further reflections back to a photosensitive surface of a cell and thus contributes to power generation.
  • well-reflecting and well-conducting strips are applied on the inside of the back glass module so that they then form a grid (the grating period being essentially determined by the edge length of the cells, ie the grating period in the X and Y direction is around the gap between two adjacent cells greater than the edge length of the cells in the X and Y directions), so that between adjacent cells and in the edge region of lying on the edge of the module cells, the light is directed as well as possible on power generating areas of the cells.
  • the strips must be only a few mm wide (for example, 3mm ... 10 mm).
  • the strips can be made, for example, by a conductive varnish or by aluminum strips.
  • the conductive strips In order to optimize the reflective properties of the conductive strips, they can still be embossed (to achieve diffuse reflection) or provided with an additional surface coating.
  • the strips lie directly on the inside of the back glass and are electrically isolated from the cells by the potting material surrounding the PV cells. Reflective gratings are already used in a number of glass-glass modules, but these are reflective only and do not have the added function of interconnecting bypass networks.
  • FIG. 11 shows this particularly advantageous connection of the bypass network by way of example in the case of a module which consists of 6 rows of half cells. Within a row running from left to right, the cells are connected in series, whereby the 6 rows are connected in parallel.
  • the reflective and conductive grid which is behind the cells, establishes the connection between the bypass network on the left edge of the junction box and the second electrical module connection on the right.
  • a comparison is made of a module in which a separate line 16 is laid for the interconnection of the bypass network and a comparable module with the conductive grid (hatched in FIG. 15) is shown in the lower half.
  • the fourth grid is here on the left and right still extended with areas where the grid can be well contacted and connected to conductors to the bypass network and to the cells.
  • Fig. 12 shows the structure of a glass-glass module according to the invention, in which the glass 11 is below. It is shown a section through the module in the region of two adjacent cells. In the area 17, the space between two adjacent cells and the edge area around a cell, the electrically well conducting and reflecting layer 15 is applied on the inside of the back glass with a certain overlap to the cell area 18 with the pattern of a grid (if the projection onto the area the back glass considered). On the back glass with the conductive layer is then the embedding material 12 for the cells 14, which at the same time allows an electrical isolation of the cells from each other under cells of the conductive layer 15 on the back wall.
  • This potting material surrounds the cells from all sides and at the same time establishes the mechanical connection of the cells with the overlying front glass 13 and the underlying back glass 11.
  • the conductive strips should not have too high an electrical resistance (overall, the total resistance of the grid should be well below 1 ohms) and should not be too thick either. For this reason, a good conductive material is needed.
  • these strips could be made of aluminum, whereby the aluminum can still be coated and / or embossed (diffuse reflection) to optimize the reflection properties.
  • the power supply for the data processing unit of the bypass network is provided by the fact that the bypass network repeatedly shuts off the additional power switch, whereby, however, the power loss of the bypass element increases significantly for a short time. This high power loss is undesirable because it must be ensured that this heat is dissipated.
  • the voltage drop in the conductive grid (or part of the grid) is used to provide the energy for the supply of the bypass network.
  • Fig. 13 shows how the grating could be modified on the basis of the module shown in Fig. 11.
  • the electrical conductors of the grid are purposefully interrupted at several points 23, so that from the electrical module connection 20, which is far away from the bypass network, two separate Rungs 21 and 22 to Bypass network 2 are present and the bypass network has an additional connection to the power supply.
  • the one current path flows through the largest part of the current when the bypass network is active, so that in this path 21 a significant voltage drop occurs (for example a few 100 mV, which are sufficient for the supply of the bypass network). Only a small supply current flows through the second path for the bypass network, so that no significant voltage drop occurs here, and thus an electrical supply voltage of a few 100 mV is available for the bypass network.
  • bypass network formed by a diode is active
  • Bypass network is active. Current flows mainly through voltage-limiting diode. The data processing unit works. Workspace is not permanently stable because the circuit breaker is turned on, bypassing the bypass network in workspace 210.
  • IPV current through PV string current at the plus terminal of the Tei Istrings of the
  • IPV, I, IPV, 2, Ipv, 3 Ipv of substring 1, 2 or 3
  • I B p Bypass current ie current that flows out of the positive connection of the bypass network
  • the value of Ustart is a negative voltage.

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un module photovoltaïque (1) pourvu d'au moins un réseau de dérivation (2) avec une unité de traitement de données (36), lequel permet, en liaison avec un serveur de surveillance de chaîne prévu pour au moins une chaîne de modules commune, une détection simple et économique de défaillances dans le circuit de courant également pour des modules photovoltaïques non éclairés la nuit. Le réseau de dérivation (2) comporte un circuit parallèle composé d'un composant (31) limitant la tension négative dans la dérivation, d'un circuit de puissance supplémentaire (30) ainsi que d'une entrée d'un convertisseur CC-CC (33). Dans la mesure où le courant traversant le réseau de dérivation (2) est en dessous du courant de déclenchement, le réseau de dérivation (2) peut prendre en permanence dans la zone active un premier état actif dans lequel le circuit de puissance supplémentaire (30) n'est pas activé et dans lequel un courant significatif s'écoule par l'intermédiaire du réseau de dérivation (2). Le convertisseur CC-CC (33) est en mesure d'alimenter en énergie l'unité de traitement de données (36), appartenant au réseau de dérivation (2), qui commande si nécessaire le circuit de puissance supplémentaire (30) dans la mesure où la tension aux bornes du réseau de dérivation (2) est plus négative qu'une tension de démarrage (Ustart) du convertisseur CC-CC (33).
EP16733395.4A 2015-06-30 2016-06-23 Module photovoltaïque optimisé avec réseau de dérivation Withdrawn EP3317901A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15020105.1A EP3113232A1 (fr) 2015-06-30 2015-06-30 Panneau photovoltaïque optimisé avec réseau bypass
PCT/EP2016/064531 WO2017001277A1 (fr) 2015-06-30 2016-06-23 Module photovoltaïque optimisé avec réseau de dérivation

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DE9312710U1 (de) * 1993-08-25 1993-10-28 Institut für Solare Energieversorgungstechnik (ISET) - Verein an der Gesamthochschule Kassel, 34119 Kassel Modulares Diagnosesystem zur Erkennung und Lokalisierung von Fehlern in Photovoltaikanlagen
DE102005036153B4 (de) * 2005-05-24 2007-03-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schutzschalteinrichtung für ein Solarmodul
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