EP3246947A4 - Resistance change element and method for manufacturing same - Google Patents

Resistance change element and method for manufacturing same Download PDF

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Publication number
EP3246947A4
EP3246947A4 EP16737382.8A EP16737382A EP3246947A4 EP 3246947 A4 EP3246947 A4 EP 3246947A4 EP 16737382 A EP16737382 A EP 16737382A EP 3246947 A4 EP3246947 A4 EP 3246947A4
Authority
EP
European Patent Office
Prior art keywords
resistance change
change element
manufacturing same
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP16737382.8A
Other languages
German (de)
French (fr)
Other versions
EP3246947A1 (en
EP3246947B1 (en
Inventor
Toshihide Nabatame
Tadaaki Nagao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Institute for Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Materials Science filed Critical National Institute for Materials Science
Publication of EP3246947A1 publication Critical patent/EP3246947A1/en
Publication of EP3246947A4 publication Critical patent/EP3246947A4/en
Application granted granted Critical
Publication of EP3246947B1 publication Critical patent/EP3246947B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/023—Formation of the switching material, e.g. layer deposition by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
EP16737382.8A 2015-01-15 2016-01-13 Resistance change element and method for manufacturing same Active EP3246947B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015005464A JP6544555B2 (en) 2015-01-15 2015-01-15 Method of manufacturing resistance variable element
PCT/JP2016/050853 WO2016114311A1 (en) 2015-01-15 2016-01-13 Resistance change element and method for manufacturing same

Publications (3)

Publication Number Publication Date
EP3246947A1 EP3246947A1 (en) 2017-11-22
EP3246947A4 true EP3246947A4 (en) 2018-10-31
EP3246947B1 EP3246947B1 (en) 2020-04-01

Family

ID=56405852

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16737382.8A Active EP3246947B1 (en) 2015-01-15 2016-01-13 Resistance change element and method for manufacturing same

Country Status (4)

Country Link
US (1) US10290802B2 (en)
EP (1) EP3246947B1 (en)
JP (1) JP6544555B2 (en)
WO (1) WO2016114311A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2653399C2 (en) * 2016-09-15 2018-05-08 Федеральное государственное бюджетное учреждение науки Институт электрофизики Уральского отделения Российской академии наук (ИЭФ УрО РАН) Method of amorphous oxide of aluminum coating by reactive evaporation of aluminum in low pressure discharge
CN107610733B (en) * 2017-08-31 2020-05-19 华中科技大学 Electric forming method for reducing forming voltage of resistive random access memory
CN110317061B (en) * 2018-03-28 2021-06-15 山东理工大学 Preparation of Al4O4Method for producing C nanofibers
JP2020043240A (en) 2018-09-11 2020-03-19 キオクシア株式会社 Memory device
CN109461812B (en) * 2018-09-27 2022-07-29 西交利物浦大学 Aluminum oxide-based RRAM and preparation method thereof
CN110676374B (en) * 2019-05-22 2020-06-09 集美大学 Resistive random access memory and preparation method thereof
US11527712B2 (en) * 2020-07-06 2022-12-13 Tetramem Inc. Low current RRAM-based crossbar array circuits implemented with interface engineering technologies

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090014704A1 (en) * 2007-07-11 2009-01-15 International Business Machines Corporation Current constricting phase change memory element structure
US20130168632A1 (en) * 2011-12-29 2013-07-04 Ji-Won Moon Resistance variable memory device and method for fabricating the same
US20130292631A1 (en) * 2012-05-07 2013-11-07 Feng Chia University Multi-Layered Phase-Change Memory Device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007243009A (en) * 2006-03-10 2007-09-20 Renesas Technology Corp Semiconductor device and its manufacturing method
JP5286565B2 (en) * 2007-06-15 2013-09-11 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus
US8367560B2 (en) * 2007-06-15 2013-02-05 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method
JP5309615B2 (en) 2008-03-05 2013-10-09 富士通株式会社 Resistance change type memory and manufacturing method thereof
KR101491623B1 (en) * 2008-09-24 2015-02-11 삼성디스플레이 주식회사 Display device and driving method thereof
US8357583B2 (en) * 2010-09-10 2013-01-22 Elpida Memory, Inc. Method for manufacturing semiconductor device
KR101492139B1 (en) 2010-12-01 2015-02-10 캐논 아네르바 가부시키가이샤 Nonvolatile memory element and method of manufacturing the same
WO2012145379A1 (en) * 2011-04-19 2012-10-26 Porex Corporation Liquid sampling, storage, transfer and delivery device
TW201304561A (en) * 2011-07-11 2013-01-16 Hannstar Display Corp Loudspeaker structure for flat display
US8866121B2 (en) * 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
JP5874905B2 (en) 2011-10-18 2016-03-02 国立研究開発法人物質・材料研究機構 Method of manufacturing an alumina resistance change memory element
JP2013157469A (en) * 2012-01-30 2013-08-15 Sharp Corp Variable resistive element, and nonvolatile semiconductor storage device
KR20130126325A (en) 2012-05-11 2013-11-20 에스케이하이닉스 주식회사 Resistance variable memory device and method for fabricating the same
JP2014022660A (en) * 2012-07-20 2014-02-03 Sharp Corp Variable resistance element, and nonvolatile semiconductor memory device provided with variable resistance element
JP2014053568A (en) * 2012-09-10 2014-03-20 Toshiba Corp Ferroelectric memory and method of manufacturing the same
JP5680045B2 (en) * 2012-11-14 2015-03-04 株式会社東芝 Magnetoresistive element and magnetic memory
US9012298B2 (en) * 2012-12-31 2015-04-21 Intermolecular, Inc. Methods for reproducible flash layer deposition
US9368722B2 (en) * 2013-09-06 2016-06-14 Taiwan Semiconductor Manufacturing Company Ltd. Resistive random access memory and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090014704A1 (en) * 2007-07-11 2009-01-15 International Business Machines Corporation Current constricting phase change memory element structure
US20130168632A1 (en) * 2011-12-29 2013-07-04 Ji-Won Moon Resistance variable memory device and method for fabricating the same
US20130292631A1 (en) * 2012-05-07 2013-11-07 Feng Chia University Multi-Layered Phase-Change Memory Device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016114311A1 *

Also Published As

Publication number Publication date
JP2016131216A (en) 2016-07-21
WO2016114311A1 (en) 2016-07-21
US10290802B2 (en) 2019-05-14
JP6544555B2 (en) 2019-07-17
EP3246947A1 (en) 2017-11-22
US20170346006A1 (en) 2017-11-30
EP3246947B1 (en) 2020-04-01

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