EP3246947A4 - Resistance change element and method for manufacturing same - Google Patents
Resistance change element and method for manufacturing same Download PDFInfo
- Publication number
- EP3246947A4 EP3246947A4 EP16737382.8A EP16737382A EP3246947A4 EP 3246947 A4 EP3246947 A4 EP 3246947A4 EP 16737382 A EP16737382 A EP 16737382A EP 3246947 A4 EP3246947 A4 EP 3246947A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- resistance change
- change element
- manufacturing same
- manufacturing
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015005464A JP6544555B2 (en) | 2015-01-15 | 2015-01-15 | Method of manufacturing resistance variable element |
PCT/JP2016/050853 WO2016114311A1 (en) | 2015-01-15 | 2016-01-13 | Resistance change element and method for manufacturing same |
Publications (3)
Publication Number | Publication Date |
---|---|
EP3246947A1 EP3246947A1 (en) | 2017-11-22 |
EP3246947A4 true EP3246947A4 (en) | 2018-10-31 |
EP3246947B1 EP3246947B1 (en) | 2020-04-01 |
Family
ID=56405852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16737382.8A Active EP3246947B1 (en) | 2015-01-15 | 2016-01-13 | Resistance change element and method for manufacturing same |
Country Status (4)
Country | Link |
---|---|
US (1) | US10290802B2 (en) |
EP (1) | EP3246947B1 (en) |
JP (1) | JP6544555B2 (en) |
WO (1) | WO2016114311A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2653399C2 (en) * | 2016-09-15 | 2018-05-08 | Федеральное государственное бюджетное учреждение науки Институт электрофизики Уральского отделения Российской академии наук (ИЭФ УрО РАН) | Method of amorphous oxide of aluminum coating by reactive evaporation of aluminum in low pressure discharge |
CN107610733B (en) * | 2017-08-31 | 2020-05-19 | 华中科技大学 | Electric forming method for reducing forming voltage of resistive random access memory |
CN110317061B (en) * | 2018-03-28 | 2021-06-15 | 山东理工大学 | Preparation of Al4O4Method for producing C nanofibers |
JP2020043240A (en) | 2018-09-11 | 2020-03-19 | キオクシア株式会社 | Memory device |
CN109461812B (en) * | 2018-09-27 | 2022-07-29 | 西交利物浦大学 | Aluminum oxide-based RRAM and preparation method thereof |
CN110676374B (en) * | 2019-05-22 | 2020-06-09 | 集美大学 | Resistive random access memory and preparation method thereof |
US11527712B2 (en) * | 2020-07-06 | 2022-12-13 | Tetramem Inc. | Low current RRAM-based crossbar array circuits implemented with interface engineering technologies |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090014704A1 (en) * | 2007-07-11 | 2009-01-15 | International Business Machines Corporation | Current constricting phase change memory element structure |
US20130168632A1 (en) * | 2011-12-29 | 2013-07-04 | Ji-Won Moon | Resistance variable memory device and method for fabricating the same |
US20130292631A1 (en) * | 2012-05-07 | 2013-11-07 | Feng Chia University | Multi-Layered Phase-Change Memory Device |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007243009A (en) * | 2006-03-10 | 2007-09-20 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
US8367560B2 (en) * | 2007-06-15 | 2013-02-05 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method |
JP5286565B2 (en) * | 2007-06-15 | 2013-09-11 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus |
JP5309615B2 (en) | 2008-03-05 | 2013-10-09 | 富士通株式会社 | Resistance change type memory and manufacturing method thereof |
KR101491623B1 (en) * | 2008-09-24 | 2015-02-11 | 삼성디스플레이 주식회사 | Display device and driving method thereof |
JP2012080094A (en) * | 2010-09-10 | 2012-04-19 | Elpida Memory Inc | Semiconductor memory device and method for manufacturing the same |
WO2012073471A1 (en) | 2010-12-01 | 2012-06-07 | キヤノンアネルバ株式会社 | Nonvolatile memory element and method for manufacturing method same |
WO2012145379A1 (en) * | 2011-04-19 | 2012-10-26 | Porex Corporation | Liquid sampling, storage, transfer and delivery device |
TW201304561A (en) * | 2011-07-11 | 2013-01-16 | Hannstar Display Corp | Loudspeaker structure for flat display |
US8866121B2 (en) * | 2011-07-29 | 2014-10-21 | Sandisk 3D Llc | Current-limiting layer and a current-reducing layer in a memory device |
JP5874905B2 (en) | 2011-10-18 | 2016-03-02 | 国立研究開発法人物質・材料研究機構 | Method of manufacturing an alumina resistance change memory element |
JP2013157469A (en) * | 2012-01-30 | 2013-08-15 | Sharp Corp | Variable resistive element, and nonvolatile semiconductor storage device |
KR20130126325A (en) | 2012-05-11 | 2013-11-20 | 에스케이하이닉스 주식회사 | Resistance variable memory device and method for fabricating the same |
JP2014022660A (en) * | 2012-07-20 | 2014-02-03 | Sharp Corp | Variable resistance element, and nonvolatile semiconductor memory device provided with variable resistance element |
JP2014053568A (en) * | 2012-09-10 | 2014-03-20 | Toshiba Corp | Ferroelectric memory and method of manufacturing the same |
JP5680045B2 (en) * | 2012-11-14 | 2015-03-04 | 株式会社東芝 | Magnetoresistive element and magnetic memory |
US9105646B2 (en) * | 2012-12-31 | 2015-08-11 | Intermolecular, Inc. | Methods for reproducible flash layer deposition |
US9368722B2 (en) * | 2013-09-06 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Resistive random access memory and manufacturing method thereof |
-
2015
- 2015-01-15 JP JP2015005464A patent/JP6544555B2/en active Active
-
2016
- 2016-01-13 WO PCT/JP2016/050853 patent/WO2016114311A1/en active Application Filing
- 2016-01-13 US US15/536,150 patent/US10290802B2/en not_active Expired - Fee Related
- 2016-01-13 EP EP16737382.8A patent/EP3246947B1/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090014704A1 (en) * | 2007-07-11 | 2009-01-15 | International Business Machines Corporation | Current constricting phase change memory element structure |
US20130168632A1 (en) * | 2011-12-29 | 2013-07-04 | Ji-Won Moon | Resistance variable memory device and method for fabricating the same |
US20130292631A1 (en) * | 2012-05-07 | 2013-11-07 | Feng Chia University | Multi-Layered Phase-Change Memory Device |
Non-Patent Citations (1)
Title |
---|
See also references of WO2016114311A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP2016131216A (en) | 2016-07-21 |
EP3246947B1 (en) | 2020-04-01 |
EP3246947A1 (en) | 2017-11-22 |
JP6544555B2 (en) | 2019-07-17 |
US20170346006A1 (en) | 2017-11-30 |
US10290802B2 (en) | 2019-05-14 |
WO2016114311A1 (en) | 2016-07-21 |
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