EP3240978A1 - Structure solaire sélective autonettoyante résistant à une température élevée - Google Patents

Structure solaire sélective autonettoyante résistant à une température élevée

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Publication number
EP3240978A1
EP3240978A1 EP15823171.2A EP15823171A EP3240978A1 EP 3240978 A1 EP3240978 A1 EP 3240978A1 EP 15823171 A EP15823171 A EP 15823171A EP 3240978 A1 EP3240978 A1 EP 3240978A1
Authority
EP
European Patent Office
Prior art keywords
structure according
layer
thickness
top section
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15823171.2A
Other languages
German (de)
English (en)
Inventor
María Elena GUILLÉN RODRÍGUEZ
Ramón ESCOBAR GALINDO
Irene HERAS PÉREZ
José Luis ENDRINO ARMENTEROS
Azucena BELLO
Noelia MARTÍNEZ SANZ
Frank LUNGWITZ
Marcel Neubert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Helmholtz Zentrum Dresden Rossendorf eV
Original Assignee
Helmholtz Zentrum Dresden Rossendorf eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helmholtz Zentrum Dresden Rossendorf eV filed Critical Helmholtz Zentrum Dresden Rossendorf eV
Publication of EP3240978A1 publication Critical patent/EP3240978A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00—Details of absorbing elements
    • F24S70/30—Auxiliary coatings, e.g. anti-reflective coatings
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S20/00—Solar heat collectors specially adapted for particular uses or environments
    • F24S20/20—Solar heat collectors for receiving concentrated solar energy, e.g. receivers for solar power plants
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00—Details of absorbing elements
    • F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
    • F24S70/225—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption for spectrally selective absorption
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S80/00—Details, accessories or component parts of solar heat collectors not provided for in groups F24S10/00-F24S70/00
    • F24S80/50—Elements for transmitting incoming solar rays and preventing outgoing heat radiation; Transparent coverings
    • F24S80/52—Elements for transmitting incoming solar rays and preventing outgoing heat radiation; Transparent coverings characterised by the material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/40—Solar thermal energy, e.g. solar towers

Definitions

  • the present invention relates to a high-temperature solar selective structure e.g. of tower receivers in concentrating solar power (CSP) systems.
  • the solar selective structure maintains high absorptance in the solar region and low emittance in the infrared spectrum.
  • the solar selective structure resists to high temperature and is stable in air.
  • a set of mirrors concentrates the solar light into/onto a receiver placed in/on the top of a tower, which is located in the focal point of the mirrors.
  • the receiver tubes are coated by a solar selective coating, and filled by a heat transfer fluid.
  • the solar selective coating must be highly absorbing in the solar region and must have a low thermal emittance at elevated temperature.
  • Coatings usually used as solar selective coatings for high temperature applications are based on cermets, which are highly absorbing in the visible region and transparent to the infrared region, deposited on a highly reflecting substrate which avoids emittance losses from the transfer fluid.
  • Selective absorber surface coatings can be classified in six different types: a) intrinsic, b) semiconductor-metal tandems, c) multilayer absorbers, d) multi-dielectric composite coatings, e) textured surfaces and f) selectively solar transmitting coatings on a black- body-like absorber. With respect to the last type of mentioned coatings, there are some works in the literature such as C. E. Kennedy, "Review of Mid- to High- Temperature Solar Selective Absorber Materials" no.
  • Cells 2012, 98, 1-23 is an example of films based on a black body (BB) like absorber coated by transparent conductive oxides as; ln 2 0 3 /Si; G.E. Carver , S. Karbal, A., Donnadieu, Chaoui, A.; Manifacier, J. C. Tin oxide-black molybdenum photothermal solar energy. Mat. Res. Bull. 1982, 17, 527-532. Use Sn0 2 /Black Molybdenum for providing a coating with wave length selective properties.
  • BB black body
  • the TCO layers of the state of the art are deposited on a BB substrate (where BB stands for "black body”).
  • BB stands for "black body”
  • This substrate contributes to the optical properties of the material. Therefore, the coating is always a single layer.
  • the amount of energy provided by the solar system is reduced by dirtiness of the coating on the surface of the tube. If the coating becomes unclean, the incoming light reaching the absorber material will be dramatically reduced.
  • the transmission loss of solar radiation can be as much as 50% when the dust concentration is 1 mg/cm 2 (Mazumderl, M.; Horenstein, M.; Stark, J.; Girouard, P.; Sumnerl, R. Characterization of Electrodynamic Screen Performance for Dust Removal from Solar Panels and Solar Hydrogen Generators. 201 1 , 1-8).
  • surface roughness may hinder transparency due to scatter losses.
  • Self-cleaning properties can be advantageous to avoid dirtiness accumulation on the tubes and to increase long-term durability of the coating.
  • a self-cleaning coating is especially interesting for open air applications like CSP towers as the self-cleaning properties will favor the long term stability, the reduction of maintenance works, cost reduction and the optimal performance of the system during coating lifetime, which results in higher efficiency of the plant. Reduction of maintenance work is especially interesting regarding the receiver in the tower due to the difficult access to clean the coating surface.
  • a glass or glass ceramic disc which comprises an infrared reflective layer and which is used as viewing pane for high temperature applications.
  • This invention does not describe a blackbody layer, it only comprises an infrared reflective layer.
  • the coating does not achieve optical selective characteristics of absorptance and emittance, to absorb in the solar region and emit in the infrared spectrum, required for receiver applications.
  • the present invention provides a solar selective structure which exhibits self-cleaning properties and can e.g. be used for high temperature applications in air, for tower receivers in concentrating solar power (CSP) systems.
  • CSP concentrating solar power
  • the solar selective structure is based on a highly absorbing material, resistant to high temperatures, coated by a thin layer which fulfills the following characteristics: self- cleaning capabilities, high transmission in the visible, high reflectance in the IR and resistance to high temperature.
  • the structure is stable at temperatures over 500 °C, its absorptance is in the 0.80-0.99 range and it has an emittance below 0.6.
  • the present invention is directed to a structure, which comprises:
  • a top section comprising a top layer comprising Ti0 2 doped with an element selected from Sb, In, B, F, Sn, Nb, N, Ru or Ta,
  • a substrate selected from metallic or ceramic materials
  • intermediate section is arranged between the substrate and the top section.
  • the top section may consist of a single layer (i.e. the top layer), or of a multilayer stack comprising the top layer.
  • the top layer of the top section is resistant to high temperatures, reflecting in the IR, transmitting in the visible region, and with self-cleaning properties
  • the top layer due to the presence of Ti0 2 , does not absorb in the visible region and it is photocatalytically active. In addition, when doped with metals, it exhibits IR reflective properties. Wide band gap semiconductor Ti0 2 has a melting temperature of 1855°C and exhibits self-cleaning properties due to two different phenomena: photocatalysis and photo- induced superhydrophilicity. Photoexcited titanium dioxide has a strong oxidation and reduction power which may result in the degradation of surface pollutants. Another self- cleaning mechanism different from the photocatalytic decomposition of organic components is the photo-induced hydrophilic conversion of Ti0 2 , which produces very small contact angles on the surface of Ti0 2 .
  • the structure of the invention also comprises a layer of an IR reflecting material deposited between layer (b) and substrate (c).
  • This additional layer produces a further reduction in emissivity of the structure of the invention.
  • the IR reflecting material comprises Al, Cu, Ag or Au.
  • this material comprises a nitride such as, but not limited to, TiN, ZrN or CrN.
  • the thickness of this IR reflecting material is preferably between 50 nm and 500 nm, and more preferably between 100 nm and 250 nm.
  • the top section (a) is a single layer comprising Ti0 2 doped with an element selected from Sb, In, B, F, Sn, Nb, N, Ru or Ta, preferably Ta.
  • the dopant concentration is equal to or lower than 10 at.%., wherein "at.%” is atomic percent (percentage of one atom relative to the total number of atoms). And more preferably the dopant concentration is between 1 -3 at.%.
  • the top section (a) is a single layer of Ti0 2 doped with Ta.
  • This layer can be dense or porous, with porosity preferably equal to or lower than 70 % v/v (volume fraction), more preferably between 10-50 % v/v.
  • Optical constants of the layer can be tuned changing the porosity.
  • the transmittance in the visible can be raised by raising the porosity, as the optical properties of a porous layer would be the combination of the optical constants of the material and the air located in the porous layer.
  • the thickness of the single layer (a) is lower than 1 ⁇ , preferably between 10 nm and 500 nm.
  • the top section (a) is a multilayer stack comprising at least a layer of Ti0 2 doped with an element selected from Sb, In, B, F, Sn, Nb, N, Ru or Ta, preferably Ta, and a layer of a secondary transparent conductive oxide (TCO) with different refractive index.
  • TCOs are conductive materials which exhibit selective transmittance. They have a low absorption coefficient in the near UV-vis region, and they are reflective in the IR.
  • TCOs can be binary or ternary compounds or they can also be a multicomponent.
  • Non-limiting examples of semiconducting oxides of the secondary TCO for the present invention are Sn0 2 , ln 2 Sn0 3 , SiO x N y , SiO x C y , ZnO.
  • the semiconducting oxides of the secondary TCO is selected from Sn0 2, ZnO or ln 2 0 3, and more preferably Sn0 2.
  • secondary TCOs are doped, and possible dopants include, but are not limited to, Ta, N, Nb, Sb, In, B, F, Ru and Sn.
  • secondary TCOs are doped with F or Ta.
  • doped-Ti0 2 layers can also be dense or porous with porosity equal to or lower than 70% v/v, volume fraction, preferably 10-50 % v/v.
  • the dopant concentration would be equal or lower than 10 at.%, wherein "at.%” is atomic percent (percentage of one atom relative to the total number of atoms). And more preferably the dopant concentration would be between 1 at.% and 3 at.%.
  • the thickness of doped-Ti0 2 layer is between 5 nm and 500 nm, preferably between 10 nm and 100 nm and more preferably 10 nm.
  • the thickness of the secondary TCO layer is between 5 nm and 500 nm, preferably between 10 nm and 100 nm, and more preferably 30 nm.
  • the number of separate layers is between 2 and 60, preferably between 2 and 30, more preferably between 3 and 15, and more preferably between 3 and 10.
  • the multilayer stack thickness ranges between 10 nm and 2 ⁇ preferably between 20 nm and 500 nm.
  • the top section (a) is a multilayer stack as described above, comprising at least a Ta doped Ti0 2 layer and a layer of a Ta doped Sn0 2 .
  • the multilayer stack may also comprise at least one Ta doped Ti0 2 -layer and/or at least one Ta doped Sn0 2 layer.
  • Ti0 2 exhibits TCO properties when doped with metals like tantalum. Carrier density of Ta doped Ti0 2 is high, but its electron mobility is lower than other TCO materials, which will affect its transmittance and IR reflective properties.
  • Sn0 2 is also a wide band gap semiconductor material with a high melting point (1630°C). Ta doped Sn0 2 exhibits high mobility but this TCO has bad dopant activation. This limitation could be solved by increasing dopant concentration (Ta), but Ta sites will also acts as scattering centers decreasing transmittance in the visible.
  • Both semiconductor oxides exhibit similar thermal expansion coefficients which favor the multilayer stack formation.
  • Ti0 2 as a seed layer for Sn0 2 growth, an epitaxial growth of the latter is promoted, which improves its electronic properties.
  • Physical vapour deposition methods are required to obtain the desirable properties of the multilayer stack. These high energy methods make the epitaxial growth of Sn0 2 layers using Ti0 2 as a seed possible. In addition, good interlayer adhesion and homogeneity are obtained.
  • This multilayer stack based on two TCO materials combines properties of both materials, where doped Ti0 2 acts as an electron source, and doped Sn0 2 as an electron carrier, having an epitaxial growth of the Sn0 2 over the Ti0 2 that favors the performance of the multilayer stack in several aspects: contributes to reduction of tensions during deposition, so one layer grows over the other with no delamination, as if they were the same material.
  • This good interlayer connection favors a good conductivity between layers, which is critical for a good performance of the resulting multilayer stack.
  • the total number of single layers of both oxides is between 3 and 60, preferably between 3 and 30, and more preferably between 3 and 15, and even more preferably between 3 and 10.
  • the number of single layers of Ta doped Ti0 2 is at least 2 and the number of single layers of Ta doped Sn0 2 is at least 1 to obtain the desired epitaxial growth of the Ta doped Sn0 2 over the Ta doped Ti0 2 .
  • the multilayer stack exhibits self-cleaning properties, is high temperature resistant, has a high transmittance in the visible region and high reflectivity in the IR. In this selectivity behavior the different index of refraction of TCO materials, the number and thickness of layers and the electrical properties of the resulting TCO play a role. We obtain, therefore, a double optimization of optical properties.
  • the intermediate section is based on a material which is highly absorbing in the 300 nm - 2500 nm wavelength range and resistant to high temperature.
  • blackbody materials adequate for this layer are for example, but not limited to, carbon materials such as nanotubes, silicon, Pyromark® and other commercial paints, black enamel, black-molybdenum, cermets, plasma sprayed layers etc.
  • the present configuration allows taking advantage of the good absorption properties of a blackbody absorber, without the problem associated to its high emissivity.
  • the thickness of this intermediate section is in the range 100 nm-1000 ⁇ .
  • Thermal emission of the intermediate section is stopped thanks to the presence of the highly IR reflective top layer.
  • the use of an IR reflective top layer is advantageous in two ways: it will avoid high thermal losses at high temperature (the emittance from absorber materials like cermets rises at high temperatures), and it opens the possibility of using BB absorber materials instead of selective absorbers.
  • the intermediate section is deposited on a metallic substrate such as steel, stainless steel, copper, aluminum, Inconel® or other nickel alloy or metallic alloys, ceramic materials or any other material forming the receiver tube.
  • the resultant structure is thermally stable at more than 400 °C, more preferably the structure is stable at between 400 °C and 1000 °C and more preferably the resultant structure is stable at between 500 °C and 700 °C.
  • the resultant structure stability makes it suitable for high temperature applications.
  • Another aspect of the present invention is the use of the structure described above for tower receivers in concentrating solar power systems.
  • the structure is especially applied to tower receivers where the working temperatures are equal to or higher than 500 °C.
  • this solar selective structure could be also applied to mid- and low temperature solar thermal applications.
  • the structure of the invention is used in thermal receivers, e.g. for a solar power system.
  • the tower receiver itself is the substrate of the structure of the invention.
  • top and intermediate sections of the structure described above can be deposited by Physical Vapour Deposition, such as but not limited to Magnetron Sputtering, Cathodic Vacuum Arc, Ion Beam Sputtering, Ion Beam Assisted Deposition and High Power Impulse Magnetron Sputtering.
  • Physical Vapour Deposition such as but not limited to Magnetron Sputtering, Cathodic Vacuum Arc, Ion Beam Sputtering, Ion Beam Assisted Deposition and High Power Impulse Magnetron Sputtering.
  • Figure 1 Represents a structure according to any embodiment of the invention, formed by a top section comprising a single layer or a multilayer stack, resistant to high temperatures, reflecting in the IR, transmitting the visible region, and with self-cleaning properties (1 ), a highly absorbing section resistant to high temperatures (2), and optional IR reflective layer (3), and a substrate (4).
  • Figure 2. Illustrates the process of decreasing of the transmission rate caused by settled dirtiness on the surface of the structure and subsequent transmittance recovery due to self-cleaning.
  • Figure 3. Shows the reflectance spectra of the structure of the invention comprising a multilayer stack Ti0 2 :Ta / Sn0 2 :F top layer (1 ), BB absorbing intermediate section (2) and a stainless steel alloy as substrate (4).
  • Figure 4. Shows the reflectance spectra of a structure of the invention with a porous Ti0 2 :Ta as top layer (1 ), BB as absorbing intermediate section (2) and stainless steel alloy as substrate (4).
  • Figure 5. Shows the reflectance spectra of a structure of the invention with a porous Ti0 2 :Ta as top layer (1 ), BB as absorbing intermediate section (2) and stainless steel alloy as substrate (4), after exposure to dirtiness layer.
  • Figure 6 Shows the transmittance values of a clean glass (A) and the transmittance values when dirtiness is deposited onto the glass (B).
  • Figure 7. Shows a comparison of the absorptance after dirtiness exposure of the structure of the invention (B) and a structure not comprising the top section (A).
  • Figure 8. Optical constants of a typical Ti0 2 :Ta film.
  • FIG. 9 shows RBS (Rutherford Back Scattering) results for Ti0 2 :Ta layer deposited by Magnetron Sputtering.
  • B shows XRD (X-ray diffraction) data for Ti0 2 :Ta layer deposited by Magnetron Sputtering after annealing at 425 °C.
  • Figure 10 Shows the ellipsometric angles psi (A) and delta (B) as function of temperature and wavelength for a Ti0 2 :Ta sample.
  • Example 1 Structures of the invention and obtaining process.
  • top section is a multilayer stack based on layers of a Ta doped Ti0 2 layer 10 nm thick and a F doped Sn0 2 layer 30 nm thick disposed alternately. The number of layers is five. Ti0 2 is in anatase phase, and Ta dopant concentration is 1 .4 at.%. The most superficial layer and the layer more proximal to the absorbing material section are Ta doped Ti0 2 layers.
  • the intermediate section is a 100 nm thick layer of a blackbody material comprising a cermet based on a silicon nitride, and is deposited on a stainless steel substrate.
  • top section is a single layer of Ta doped Ti0 2 82 nm thick, with a porosity of 50 %v/v, where Ti0 2 is in the anatase phase, and Ta dopant concentration is 1 .4 at.%.
  • the intermediate section is a 100 nm thick layer of a blackbody material comprising a cermet based on a silicon nitride, and is deposited on a stainless steel substrate.
  • Samples are physically vapour deposited by Magnetron Sputtering from a metallic target with a power of 200 W at an approximate pressure of 1 .5- 10 "2 mbar.
  • the oxygen inlet is controlled by a plasma control unit.
  • This unit detects the optical emission line of metal to continuously react to changes in the sputtered plasma.
  • the optical emission of the plasma changes depending on its oxygen content. Therefore the emission signal can be used to control a feedback loop which regulates the oxygen valve very precisely. This gives the opportunity to deposit ceramic materials from a metallic target with a high sputtering rate and a controlled stoichiometry.
  • Ti0 2 samples are annealed to 425 °C during 1 hour 30 minutes to obtain anatase phase.
  • the absorptance and emittance of the structure (2) was simulated before and after the exposure to dirtiness.
  • the dirtiness has been simulated as a porous partial light blocking layer of 700 nm. This layer of dirtiness produces a transmittance reduction over a glass of 86% to 50% which can be seen in figure 6.
  • Data are shown in the following table:
  • Figure 1 represents a structure according to any embodiment of the invention, formed by a top section comprising a single layer or a multilayer stack resistant to high temperatures, reflecting in the IR, transmitting the visible region, and with self-cleaning properties (1 ), a highly absorbing section resistant to high temperatures (2), an optional IR reflective layer (3), and a substrate (4).
  • Figure 2 represents the self-cleaning process of the structure.
  • the structure In normal conditions of operation the structure exhibits an absorptance a and an emittance ⁇ . During the night, the structure becomes unclean. Dirtiness diminishes the absorptance and increases the emittance of the structure during morning operation. The surface of the structure is cleaned under exposure to light. Thanks to the self-cleaning properties of the structure, the surface of the receiver is clean again.
  • Figure 3 shows the reflectance spectrum of the structure (1 ) of example 1 of the invention. An absorptance of 0.92 and an emittance of 0.07 are obtained.
  • Figure 4 shows the reflectance spectrum of the structure (2) of example 1 of the invention. An absorptance of 0.94 and an emittance of 0.07 are obtained.
  • Figure 5 shows the reflectance spectra after dirtiness accumulation on a structure of the invention comprising a porous Ti0 2 :Ta as top section (1 ), a BB as absorbing intermediate section (2) and stainless steel alloy as substrate (4) .
  • the diminution of the transmission properties of the top layer has negative effects on the optical properties of the structure described in Figure 1 .
  • structure (2) in example 1 has a 700 nm thick layer of dirtiness absorptance decreases to 0.82, and emittance increases to 0.11 (Table 1 ).
  • Figure 6 shows how the dirtiness layer in Figure 5 diminishes the transmittance when deposited on a glass substrate. Solar transmittance decreases from 86 % to 50 %.
  • Figure 7 shows a comparison of the structure with no self-cleaning top layer (A) and the structure proposed in this invention comprising a multilayer stack of Ti0 2 :Ta and Sn0 2 :F top section (B). Dirtiness accumulation on the structure surface without the self- cleaning top layer provides an absorptance of 0.84.
  • Figure 8 shows optical constants of a typical Ti0 2 :Ta layer deposited by Magnetron Sputtering. Index of refraction (n) and extinction coefficient (k) of the material were obtained from ellipsometry measurements.
  • Figure 9A shows RBS (Rutherford Back Scattering) results for a Ti0 2 :Ta layer deposited by Magnetron Sputtering. This experiment was performed to obtain the atomic composition of the layer.
  • the doped Ti0 2 layers are composed of a 1.4 at.% of Tantalum, a suitable material/dopant ratio for the conductance of the TCO.
  • Figure 9B shows XRD (X-ray diffraction) data for Ti0 2 :Ta layer deposited by Magnetron Sputtering after annealing at 425 °C. Results confirm the anatase phase of the oxide.
  • Figure 10 shows the ellipsometry data for a Ti0 2 :Ta sample deposited by magnetron sputtering. The data show that the optical constants do not change with temperature.

Abstract

La présente invention concerne une structure formée par une section supérieure comprenant une couche supérieure (1) comprenant du TiO2 dopé qui présente une transmittance élevée dans le spectre visible et une réflexion élevée dans l'infrarouge et des propriétés autonettoyantes, une section intermédiaire absorbante (2) et un substrat (4). Du fait des propriétés mentionnées et d'une résistance à une température élevée, la structure est utile en tant que structure solaire sélective pour des récepteurs à tour dans des systèmes d'énergie solaire à concentration.
EP15823171.2A 2014-12-31 2015-12-29 Structure solaire sélective autonettoyante résistant à une température élevée Withdrawn EP3240978A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ES201431972A ES2575746B1 (es) 2014-12-31 2014-12-31 Estructura selectiva solar con autolimpieza resistente a altas temperaturas
PCT/EP2015/081376 WO2016107883A1 (fr) 2014-12-31 2015-12-29 Structure solaire sélective autonettoyante résistant à une température élevée

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CN110031115A (zh) 2018-01-11 2019-07-19 清华大学 面源黑体
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