EP3224919A4 - Tunable laser with multiple in-line sections including sampled gratings - Google Patents
Tunable laser with multiple in-line sections including sampled gratings Download PDFInfo
- Publication number
- EP3224919A4 EP3224919A4 EP15863314.9A EP15863314A EP3224919A4 EP 3224919 A4 EP3224919 A4 EP 3224919A4 EP 15863314 A EP15863314 A EP 15863314A EP 3224919 A4 EP3224919 A4 EP 3224919A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- tunable laser
- line sections
- sections including
- sampled gratings
- including sampled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Communication System (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/551,353 US10020636B2 (en) | 2013-06-13 | 2014-11-24 | Tunable laser with multiple in-line sections including sampled gratings |
PCT/US2015/062377 WO2016085956A1 (en) | 2014-11-24 | 2015-11-24 | Tunable laser with multiple in-line sections including sampled gratings |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3224919A1 EP3224919A1 (en) | 2017-10-04 |
EP3224919A4 true EP3224919A4 (en) | 2018-08-08 |
Family
ID=56074962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP15863314.9A Withdrawn EP3224919A4 (en) | 2014-11-24 | 2015-11-24 | Tunable laser with multiple in-line sections including sampled gratings |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP3224919A4 (en) |
CN (1) | CN107210584A (en) |
WO (1) | WO2016085956A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106099639A (en) * | 2016-08-26 | 2016-11-09 | 武汉光迅科技股份有限公司 | A kind of multi-wavelength array laser and manufacture method thereof and using method |
CN110299589B (en) * | 2019-06-04 | 2021-11-09 | 中国人民解放军陆军工程大学 | Frequency division and frequency multiplication generation method and device |
WO2021249541A1 (en) * | 2020-06-12 | 2021-12-16 | 芯思杰技术(深圳)股份有限公司 | Photodiode and chip thereof, chip manufacturing method, and wavelength control method and apparatus |
CN111799649A (en) * | 2020-06-12 | 2020-10-20 | 芯思杰技术(深圳)股份有限公司 | Method and device for controlling wavelength of photodiode |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050031009A1 (en) * | 2003-08-07 | 2005-02-10 | San-Liang Lee | Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers |
EP2113973A1 (en) * | 2008-04-29 | 2009-11-04 | Alcatel Lucent | Laser source and method for generating millimeter wave |
CN103956652A (en) * | 2014-04-25 | 2014-07-30 | 南京威宁锐克信息技术有限公司 | Low-cost tunable DFB semiconductor laser device of integrated modulator and manufacturing method |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5413884A (en) * | 1992-12-14 | 1995-05-09 | American Telephone And Telegraph Company | Grating fabrication using electron beam lithography |
US5536085A (en) * | 1995-03-30 | 1996-07-16 | Northern Telecom Limited | Multi-wavelength gain-coupled distributed feedback laser array with fine tunability |
KR100464359B1 (en) * | 2002-03-11 | 2005-01-03 | 삼성전자주식회사 | Tunable laser apparatus |
US8457165B2 (en) * | 2010-05-26 | 2013-06-04 | Google Inc. | Tunable multi-wavelength semiconductor laser array for optical communications based on wavelength division multiplexing |
US8805191B2 (en) * | 2011-09-29 | 2014-08-12 | Applied Optoelectronics, Inc. | Optical transceiver including optical fiber coupling assembly to increase usable channel wavelengths |
CN102891433B (en) * | 2012-09-27 | 2014-09-03 | 中国科学院半导体研究所 | Method for manufacturing tunable laser and optical amplifier monolithic integrated device |
CN103811994A (en) * | 2012-11-07 | 2014-05-21 | 无锡华御信息技术有限公司 | Working point variable semiconductor laser |
US10020636B2 (en) * | 2013-06-13 | 2018-07-10 | Applied Optoelectronics, Inc. | Tunable laser with multiple in-line sections including sampled gratings |
-
2015
- 2015-11-24 EP EP15863314.9A patent/EP3224919A4/en not_active Withdrawn
- 2015-11-24 CN CN201580072166.7A patent/CN107210584A/en active Pending
- 2015-11-24 WO PCT/US2015/062377 patent/WO2016085956A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050031009A1 (en) * | 2003-08-07 | 2005-02-10 | San-Liang Lee | Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers |
EP2113973A1 (en) * | 2008-04-29 | 2009-11-04 | Alcatel Lucent | Laser source and method for generating millimeter wave |
CN103956652A (en) * | 2014-04-25 | 2014-07-30 | 南京威宁锐克信息技术有限公司 | Low-cost tunable DFB semiconductor laser device of integrated modulator and manufacturing method |
Non-Patent Citations (2)
Title |
---|
LIANYAN LI ET AL: "Experimental demonstration of a low-cost tunable semiconductor DFB laser for access networks", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, IOP PUBLISHING LTD, GB, vol. 29, no. 9, 23 July 2014 (2014-07-23), pages 95002, XP020269078, ISSN: 0268-1242, [retrieved on 20140723], DOI: 10.1088/0268-1242/29/9/095002 * |
See also references of WO2016085956A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2016085956A1 (en) | 2016-06-02 |
CN107210584A (en) | 2017-09-26 |
EP3224919A1 (en) | 2017-10-04 |
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Legal Events
Date | Code | Title | Description |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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17P | Request for examination filed |
Effective date: 20170626 |
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AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
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AX | Request for extension of the european patent |
Extension state: BA ME |
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RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: ANSELM, KLAUS ALEXANDER Inventor name: ZHENG, JUN Inventor name: ZHANG, HUANLIN Inventor name: MCINTOSH-DORSEY, DION |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01S 5/50 20060101ALI20180628BHEP Ipc: H01S 5/40 20060101AFI20180628BHEP Ipc: H01S 5/12 20060101ALI20180628BHEP Ipc: H01S 5/06 20060101ALI20180628BHEP Ipc: H01S 5/0625 20060101ALI20180628BHEP Ipc: H01S 5/028 20060101ALI20180628BHEP |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20180706 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: APPLIED OPTOELECTRONICS, INC. |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20190205 |