EP3221064B1 - Actionneur avec intervalle vertical pour transducteurs ultrasonores et fabrication correspondante - Google Patents

Actionneur avec intervalle vertical pour transducteurs ultrasonores et fabrication correspondante Download PDF

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EP3221064B1
EP3221064B1 EP15784792.2A EP15784792A EP3221064B1 EP 3221064 B1 EP3221064 B1 EP 3221064B1 EP 15784792 A EP15784792 A EP 15784792A EP 3221064 B1 EP3221064 B1 EP 3221064B1
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membrane
substrate
gap
wafer
central part
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EP3221064A1 (fr
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Goksen Goksenin YARALIOGLU
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Ozyegin Universitesi
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Ozyegin Universitesi
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type

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  • the present invention relates generally to the field of ultrasonic transducers. More specifically it is related to electrostatically driven capacitive micromachined ultrasonic transducers (CMUTs).
  • CMUTs capacitive micromachined ultrasonic transducers
  • CMUTs capacitive micromachined ultrasonic transducers
  • a CMUT transducer is composed of many movable membranes which are actuated by electrostatic forces. These membranes are manufactured in such a way that the cavities at the rear side of them constitute vacuum. The cavity height or the distance between the bottom and the top electrode determines the performance parameters such as the sensitivity, output pressure of the transducer.
  • the membranes are built using micromachining techniques on a highly doped silicon substrate which forms the bottom electrode. There is usually a metal electrode on the membrane. The top metal electrode and the bottom electrode constitute a parallel plate actuator for actuating the membrane. During operation, a high DC electrical voltage is applied between the substrate and the top electrode. Due to the electrostatic force, the membrane is attracted towards the bottom electrode. The induced stress inside the membrane resists the electrostatic force.
  • the membrane moves up and down at the same frequency as the AC voltage. This movement of the membrane generates ultrasound in the transducer immersion medium. If the biased membranes are subject to an incoming ultrasound field below the DC voltage, the membrane vibrates at the frequency of the incoming field and an electrical current at the frequency of the incoming field is generated.
  • CMUT transducer consisting of membranes
  • the mechanical impedance of the CMUT transducer consisting of membranes is much smaller than that of piezoelectric materials. This enables operation of CMUT transducers with much larger bandwidth.
  • lithography defines the membrane shape and the geometry of array elements, much complex array geometries such as rings, annular arrays can be fabricated.
  • potential of integration with CMOS electronics enables new imaging modalities as well as cost reduction. Since the first introduction of CMUTs, extensive research has been performed on fabrication, modeling and applications. Initially sacrificial release process has been used for fabrication [8, 9]. Later, wafer bonding technique has been introduced [10]. Variations of these two techniques and other fabrication approaches have been reviewed in [11].
  • CMUTs have also been demonstrated for high frequency applications such as intravascular imaging [18] and 3D volumetric imaging [19].
  • the literature on the CMUTs is immense, only a few of them have been cited above to show the variety of the work that has been performed up to date.
  • CMUT transducers output pressure and receive sensitivity have conflicting requirements over the cavity height (gap).
  • the output pressure is fundamentally limited by the cavity height (distance between the bottom surface of the membrane and the top surface of the substrate).
  • the membrane cannot travel more than the cavity height. Therefore, to be able to generate high output pressure levels one needs to build transducers with large cavity heights.
  • high receive sensitivity requires high e-fields at small cavity heights. This can be achieved by reducing the cavity height. Therefore, high output pressure and high receive sensitivity cannot be obtained at the same time from the same transducer geometry.
  • CMUT transducers also generate high level of non-linearity due to the parallel plate actuation. As the membrane displaces when the electrical field inside the gap changes, this results in spring softening effect and shifts the resonant frequency. As a result, high levels of non-linearity are generated.
  • Patent document US2007/0058825 discloses a capacitive transducer wherein the center portion of the diaphragm is increased in thickness in comparison with the near-end portion. Collapse-snap back operation [25] and collapse mode [26, 27] have been introduced also to increase the output pressure. However, these approaches had marginally increased the output pressure and they also suffered from instabilities due to electric breakdown (break-down) issues. Double electrode configuration has been also proposed to separate transmit and receive signal paths [28]. With this approach, two electrodes were placed onto the membrane.
  • the electrode provided at the center of the membrane is used to collect ultrasonic signals.
  • the electrode around the central electrode due to a bias voltage applied on it, bends the membrane toward the substrate and reduces the gap between the central electrode and the substrate. This helped improving receive sensitivity, but high electrical cross talk between the receive and the transmit paths and increased number of connections resulted in more complex electronics limiting the usability of the approach.
  • Ying proposed adding a flat electrode which moves like a piston [29] in the CMUT cavity. In their publication they did not report the output pressure but they reported only 70% increase in the receive voltage. The disadvantage of this method is the increased complexity of the fabrication methods.
  • a thick part in form of a piston is added to the middle part of the membrane. This part will move within a cavity opened on the substrate.
  • the movement of the membrane is achieved by an electric field created on the gap between the piston-shaped part of the membrane and the side walls of the cavity in the substrate.
  • the motion of the membrane does not affect the height of the gap where the actuation forces are built.
  • the gaps between the thin part of the membrane and the bottom part of the piston and the substrate are selected too large, these do not interfere with the membrane motion. This enables membrane to move without any hard limits.
  • the proposed geometry can be fabricated using micromachining techniques and transducers can be manufactured by repeating the cellular structure.
  • the present invention provides an electromechanical micromachined transducer according to claim 1.
  • the membrane consists of doped single crystal silicon, doped poly-silicon layer or both.
  • the insulating layer consists of silicon dioxide.
  • the substrate consists of doped single crystal silicon.
  • the membranes have an electrically connected structure to form 1D, 2D or annular arrays.
  • the present invention provides an electromechanical micromachined transducer production method according to claim 9.
  • the main objective of this invention is to develop novel cell geometry for CMUT transducers where the sensitivity and the maximum output pressure do not have conflicting requirements over the gap.
  • electrodes instead of parallel plate actuation, electrodes will be positioned such that the cavity height does not change with the membrane (100) motion.
  • an electrostatic gap is formed vertically in the capacitor formed by a piston like part of the membrane (100) with the side walls of the gap.
  • Fig.1 This new geometry is shown in Fig.1 .
  • the actuation of the membrane (100) is achieved through a vertical gap (101).
  • the membrane (100) is composed of two parts: thick central part (piston part) (103) and thin peripheral part (108).
  • the thin peripheral part (108) is more flexible than the thick central part (103).
  • the thick central part (the piston part) (103) has a vertical side wall (1001) as shown in the Fig.1 .
  • the membrane (100) could be in circular, square or rectangular shape. It is made of a highly conducting material, preferably highly doped silicon. To increase the electrical conductivity, a metal electrode (not shown) could be deposited on top of the membrane (100).
  • the substrate (102) which can be preferably silicon wafer is etched to form a cavity (105) with several steps as shown in Fig.1 .
  • Cavity (105) is composed of three different gaps: horizontal gap 1 (106) under the thin peripheral (108) part of the membrane (100), horizontal gap 2 (107) under the thick central part (the piston part) (103) of the membrane (100) and vertical gap (101) between the vertical side walls (104) of the substrate (102) and the thick central part side walls (1001).
  • First silicon wafer namely substrate (102) is also made of a highly conducting material, preferably highly doped silicon.
  • Membrane (100) is attached to the substrate (102) through an insulating material (109) whose electrical impedance is very high.
  • the insulating material is preferably made of silicon dioxide.
  • the thick central part (103) can move freely in the cavity (105) of the substrate (102). When a voltage is applied between the membrane (100) and the substrate (102), electrical field is formed between the membrane (100) and the substrate (102) over the cavity (105).
  • Fig. 2 shows electric field formed in the gap when there is voltage applied between the membrane (100) and the substrate (102).
  • the vertical gap (101) is substantially smaller than the horizontal gap 1 (106) and the horizontal gap 2 (107). Therefore there is a stronger electrostatic force between the side walls (104) of the substrate (102) and the thick central part sidewalls (1001).
  • This electric field has two components as shown in Fig 2 : electric field horizontal component (110) and fringing fields (111).
  • the horizontal component does not move the membrane (100) because it is balanced around the perimeter of the piston.
  • fringing fields (111) between the thick central part (103) and the side walls (104) of the substrate (102) in horizontal gaps as shown in Fig. 2 can apply a net force on the thick central part (103), moving it towards the substrate (102).
  • the gaps between the membrane (100) thin peripheral part (108) and the thick central part (103) and the substrate (102) can be chosen substantially larger than the maximum membrane (100) stroke such that they these two gaps do not interfere with the membrane (100) motion.
  • Horizontal gap 1 (106) and horizontal gap 2 (107) can be different from each other and horizontal gap 2 (107) can be chosen much larger than horizontal gap 1 (106).
  • Fig.3 shows the schematic of a standard CMUT cell.
  • the CMUT is composed of a membrane (100), substrate (102) and an insulator layer (109) which electrically isolates the membrane (100) and the substrate (102).
  • the cavity (105) is obtained by etching into the substrate (102).
  • the bottom of the cavity and the membrane (100) forms a parallel plate actuator.
  • the gap distance (117) changes with the applied voltage.
  • the main difference between the geometry constituting the object of the invention disclosed in this patent application and the geometry shown in Fig 3 is that the vertical gap (101) of Fig.1 can be chosen as small as possible for increased transmit and receive sensitivity.
  • the important feature of this design is that the selection of the gap does not impose any limits on the maximum output pressure.
  • Fig. 4 shows the simplified model for a standard CMUT cell.
  • the membrane (100) is modelled by a spring (119) and a parallel plate electrode (118).
  • the electrode area is assumed to be A.
  • the gap distance is denoted by g.
  • the details of the calculation of the parameters for the equivalent circuit have been given in [15, 22] for a standard CMUT cell.
  • Fig. 5 shows the equivalent circuit model for the standard CMUT cell.
  • the transformer (121) connects electrical domain to mechanical domain.
  • electrical capacitor (120) represents the electrical parallel capacitance of the CMUT.
  • the membrane (100) impedance is modelled by a series (array) combination of a capacitor (123) and an inductor (124).
  • the spring softening is modelled by another capacitor (122).
  • the radiation losses are modelled by a resistor (125) which is terminated the acoustic port of the transducer.
  • Fig 6 shows the simplified model for vertical gap CMUT.
  • the membrane (100) is modelled by a spring (119) and a piston (126). This time the electrodes are on the side of the piston.
  • the piston radius, namely the membrane radius is denoted by r p .
  • h denotes the length of the electrodes.
  • the equivalent circuit is composed of an electrical capacitor (120) in the electrical part, a transformer (121), a series capacitor (123) and an inductor (124).
  • the output port is again terminated by a resistor (125).
  • the main difference between this circuit and the circuit shown in Fig 5 is that this circuit does not have any spring softening capacitor.
  • the main reason for the lack of spring softening is that the motion of the membrane (100) does not change the gap distance.
  • the calculation of the circuit parameters are given in Table 1. Assuming electrical capacitance and the membrane impedance can be made the same for both types of CMUTs, the main difference between the two circuits is the transformer ratio and the spring softening capacitance.
  • the transformer ratio represents the conversion efficiency between electrical and mechanical domains.
  • the electrode radius ( r p ) of the standard CMUT is the same as the piston radius of vertical gap CMUT.
  • g st and g v represents the gap height for standard and vertical gap CMUTs, respectively.
  • g st and g v represents the gap height for standard and vertical gap CMUTs, respectively.
  • Table 1 First order modeling for the vertical gap CMUT cell.
  • Another, interesting feature of the vertical gap device is that there is no collapse phenomena and spring softening effect.
  • the membrane (100) gets closer to the substrate (102). Beyond certain voltage, the membrane (100) collapses onto the substrate (102). The voltage where the membrane (100) collapses is called collapse voltage. This is due to the fact that the electrostatic force gradient increases as the bias voltage increases and after certain voltage, the force gradient exceeds the spring constant of the membrane (100) and the membrane (100) is pulled towards the substrate.
  • the electrostatic force is independent of membrane displacement (x), the force gradient is always zero. Therefore there is no collapse voltage associated with these devices.
  • Fig. 8.1, Fig. 8.2 , Fig. 8.3, Fig. 8.4 , Fig. 8.5, Fig. 8.6 , Fig. 8.7, Fig. 8.8 , Fig. 8.9, Fig. 8.10 , Fig. 8.11, Fig. 8.12 show a process to build vertical gap CMUT where the vertical gap height can be made substantially small.
  • the fabrication process starts with a highly doped silicon wafer, namely a substrate (102).
  • the conductivity of the starting substrate (102) should be high because this wafer will provide the side wall electrodes required to actuate the membrane (100).
  • the first silicon wafer (102) is etched as shown in Fig 8.2 . For this etch first the substrate (102) is coated by a photoresist.
  • the photoresist is patterned to define the gaps as shown in Fig 8.2 .
  • a thin sacrificial layer of dry oxide (134) is grown over the wafer surface. This oxide layer will be later etched to define the vertical gap height. The gap height is substantially small, between 50 nm to 200 nm. To define such a small gap height a well-controlled dry oxide deposition is preferred.
  • Fig 8.4 demonstrates poly-silicon layer (135) deposition. LPCVD method can be used to deposit poly-silicon.
  • poly-silicon should be doped to achieve high conductivity.
  • the poly-silicon is etched back down to oxide layer, leaving poly-silicon only in the cavities etched in Fig 8.2 .
  • Poly-silicon can be etched using dry etching or chemical wafer polishing (CMP).
  • CMP chemical wafer polishing
  • more poly-silicon is deposited and is patterned. This part of the poly-silicon will be part of the piston.
  • a thick conformal oxide layer (136) is grown over the wafer surface. This oxide layer will provide the insulation layer between the membrane (100) and the substrate (102).
  • Fig. 8.5 the poly-silicon is etched back down to oxide layer, leaving poly-silicon only in the cavities etched in Fig 8.2 .
  • CMP chemical wafer polishing
  • the thick oxide layer is patterned as shown in the figure. This also defines the membrane diameter.
  • the wafer surface is planarized using CMP process ( Fig. 8.9 ). After planarization, an SOI wafer is bonded to the top surface of the wafer ( Fig. 8.10 ). After removing the handle and the box oxide, a membrane (100) is formed.
  • the back side of the wafer is etched using deep reactive ion etching down to the oxide layer as shown in Fig 8.11 . This step exposes the oxide layer that is filling the vertical gap. At step 12, the vertical side wall is etched until it is completely cleared of oxide.
  • the oxide etching can be done using vapor phase HF or wet BOE (buffered oxide etch).
  • step 12 the main structure of the membrane (100) is completed.
  • the bottom side of the wafer can be bonded to another wafer at low pressure to evacuate the air in the back side of the membrane cavity (the reason for naming this wafer second wafer is the evaluation of the substrate (102) as the first wafer).
  • Further metallization steps can be found in CMUT fabrication references [11, 12] and same methods can be employed here.
  • Fig 9.1, Fig. 9.2 , Fig. 9.3, Fig. 9.4 , Fig. 9.5, Fig. 9.6 , Fig. 9.7 , Fig. 9.8 and Fig. 9.9 shows an alternative approach which also starts with a highly doped silicon wafer (102).
  • the surface of the wafer is etched to form a trench as shown in the figure. This trench will be filled with poly-silicon to form the piston part of the membrane (100) in the subsequent processing steps.
  • step 3 Fig 9.3
  • a thin sacrificial layer of dry oxide (134) is grown on the silicon wafer surface. Dry oxidation is the method of choice for this step due to its high uniformity and well-controlled thickness.
  • a thick layer of poly-silicon layer (135) is deposited.
  • the poly-silicon layer is patterned and etched using reactive ion etching.
  • the wafer surface is covered by a thin layer of oxide (136).
  • this oxide layer is patterned and etched. The oxide pattern at this step determines the diameter of the membrane (100).
  • the wafer is polished using CMP process. The purpose of the polishing is to planarize the wafer surface by bringing the oxide part and the poly-silicon islands to the same height for the subsequent bonding process.
  • an SOI wafer is bonded on top of the wafer.
  • the device layer (142) is attached to the oxide layer (136) and the poly-silicon part (135).
  • the back side of the wafer is patterned and etched until the thin dry oxide sacrificial layer (134) is exposed using deep reactive ion etching.
  • the thin oxide layer covering the bottom part of the poly-silicon layer (135) and the vertical gap is etched and the membrane (100) is released.
  • the back side of the wafer is bonded to another wafer at low pressure to seal the gaps and electrodes are fabricated to provide electrical interface to the mechanical structure.
  • Figure 10.1 , Figure 10.2 and Figure 10.3 shows various transducer array geometries where the cells of the transducers are fabricated as explained above.
  • the array geometries consist of electrodes providing electrical connections to the membrane (100) and the substrate (102).
  • the array geometries are not limited to the ones that are shown in this figure.
  • array elements (143) belonging to a linear 1D array are formed by electrically isolating the membranes (100) on the substrate (102).
  • the boundary of the isolation layer defines the membranes (100) which are shown by dotted lines in the figure.
  • Fig 10.2 shows array elements (146) belonging to a 2D array where the membrane layer is patterned to form a 2D array of transducer elements.
  • Fig.10.3 shows an array formed by the array elements (147) belonging to an annular array. In all these configurations, the array geometry is defined by patterning the conducting membrane layer.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Claims (9)

  1. Transducteur électromécanique micro-usiné ayant une structure cellulaire, comprenant :
    - une membrane mobile libre (100) constituée d'une partie périphérique mince (108) et d'une partie centrale épaisse (103),
    - une couche isolante (109) supportant la membrane (100),
    - une première tranche qui est un substrat incisé (102) lié à la membrane par la couche isolante (109),
    - une deuxième tranche liée au substrat (102), la structure cellulaire étant disposée de telle sorte qu'elle présente :
    - des espaces verticaux (101) présentant chacun une distance d'espacement entre les parois latérales (1001) de la partie centrale épaisse de la membrane (100) et des parois latérales verticales (104) du substrat incisé (102),
    - un premier espace horizontal (106) présentant une première distance d'espacement entre la partie périphérique mince (108) de la membrane et le substrat incisé (102), et
    - un deuxième espace horizontal (107) présentant une deuxième distance d'espacement entre la partie inférieure de la partie centrale épaisse (103) et la deuxième tranche,
    caractérisé en ce que la première distance d'espacement et la deuxième distance d'espacement des premier et deuxième espaces horizontaux (106, 107), respectivement, sont supérieures à la distance d'espacement des espaces verticaux (101),
    - la membrane (100) et le substrat (102) étant conducteurs, et
    - les parois latérales (1001) de la partie centrale épaisse de la membrane (100) et des parois latérales verticales (104) du substrat incisé (102) étant conçues pour l'application d'une tension de commande.
  2. Transducteur micro-usiné selon la revendication 1, caractérisé en ce que la membrane (100) est constituée de silicium monocristallin dopé, de couche de polysilicium dopé (135) ou des deux.
  3. Transducteur micro-usiné selon la revendication 1, caractérisé en ce que la couche isolante (109) est constituée de dioxyde de silicium.
  4. Transducteur micro-usiné selon la revendication 1, caractérisé en ce que le substrat (102) est constitué de silicium monocristallin dopé.
  5. Transducteur micro-usiné selon la revendication 1, caractérisé en ce que les membranes ont une structure électriquement connectée pour former des éléments de réseau (143) appartenant à un réseau 1D, des éléments de réseau (146) appartenant à un réseau 2D ou des éléments de réseau (147) appartenant à un réseau annulaire.
  6. Transducteur micro-usiné selon la revendication 1, caractérisé en ce que la distance d'espacement des espaces verticaux (101) est comprise entre 50 nm et 200 nm.
  7. Transducteur micro-usiné selon la revendication 1, caractérisé en ce que la deuxième distance d'espacement du deuxième espace horizontal (107) est supérieure à la première distance d'espacement du premier espace horizontal (106).
  8. Transducteur micro-usiné selon la revendication 1, dans lequel la structure cellulaire comprend en outre une couche d'oxyde mince (134) entre la couche isolante (109) et le substrat (102).
  9. Procédé de production de transducteur électromécanique micro-usiné comprenant les étapes suivantes :
    - graver par voie chimique une cavité sur un substrat dopé (102), qui est une première tranche, pour former une partie centrale épaisse (103) d'une membrane (100),
    - déposer sensiblement une fine couche sacrificielle d'oxyde sec (134) sur le substrat (102) pour former des espaces verticaux (101),
    les espaces verticaux (101) étant formés entre les parois latérales (1001) de la partie centrale épaisse de la membrane (100) et des parois latérales verticales (104) du substrat incisé (102),
    - remplir la cavité pour former la partie centrale épaisse (103) de la membrane (100) par dépôt d'une couche de polysilicium dopé (135),
    - structurer et graver par voie chimique la couche de polysilicium dopé,
    - déposer une couche isolante d'oxyde et la structurer pour former un support sur la membrane (100), et un premier espace horizontal entre la partie périphérique mince (108) de la membrane et le substrat (102),
    - polir la couche isolante d'oxyde et la couche de polysilicium,
    - lier une tranche SOI, comportant sur elle une couche de dispositif (142), au substrat (102),
    - percer un trou sur le côté arrière du substrat (102), par structuration et gravure par voie chimique du côté arrière de la tranche jusqu'à ce que la couche sacrificielle d'oxyde sec mince soit exposée,
    - graver par voie chimique la couche sacrificielle d'oxyde sec (134) depuis le trou ouvert pour libérer la partie centrale épaisse (103) de la membrane (100) et lui permettre de se déplacer librement,
    - lier une deuxième tranche au côté arrière du substrat (102) sous vide pour former une cavité scellée sous vide sur le côté arrière de la membrane (100), la cavité étant un deuxième espace horizontal,
    - munir le substrat (102) et la membrane (100) de contacts électriques,
    - le substrat (102) et la membrane (100) étant conducteurs, et
    - les parois latérales (1001) de la partie centrale épaisse de la membrane (100) et des parois latérales verticales (104) du substrat incisé (102) étant conçues pour l'application d'une tension de commande.
EP15784792.2A 2014-11-19 2015-09-09 Actionneur avec intervalle vertical pour transducteurs ultrasonores et fabrication correspondante Active EP3221064B1 (fr)

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TR201413718 2014-11-19
PCT/TR2015/050097 WO2016080931A1 (fr) 2014-11-19 2015-09-09 Actionneur d'intervalle vertical pour des transducteurs ultrasonores et fabrication de ce dernier

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US11904357B2 (en) * 2020-05-22 2024-02-20 GE Precision Healthcare LLC Micromachined ultrasonic transducers with non-coplanar actuation and displacement
US11911792B2 (en) * 2021-01-12 2024-02-27 GE Precision Healthcare LLC Micromachined ultrasonic transources with dual out-of-plane and in-plane actuation and displacement

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US7114397B2 (en) * 2004-03-12 2006-10-03 General Electric Company Microelectromechanical system pressure sensor and method for making and using
US7545075B2 (en) * 2004-06-04 2009-06-09 The Board Of Trustees Of The Leland Stanford Junior University Capacitive micromachined ultrasonic transducer array with through-substrate electrical connection and method of fabricating same
EP1922898A1 (fr) * 2005-09-09 2008-05-21 Yamaha Corporation Microphone a condensateur
US7764003B2 (en) 2006-04-04 2010-07-27 Kolo Technologies, Inc. Signal control in micromachined ultrasonic transducer
JP2012178619A (ja) * 2009-06-25 2012-09-13 Gbs:Kk 半導体マイクロホン

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