EP3084817A1 - Procédé de fabrication d'un substrat-poignée destiné au collage temporaire d'un substrat - Google Patents
Procédé de fabrication d'un substrat-poignée destiné au collage temporaire d'un substratInfo
- Publication number
- EP3084817A1 EP3084817A1 EP14824062.5A EP14824062A EP3084817A1 EP 3084817 A1 EP3084817 A1 EP 3084817A1 EP 14824062 A EP14824062 A EP 14824062A EP 3084817 A1 EP3084817 A1 EP 3084817A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- handle
- recess
- support substrate
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 171
- 238000000034 method Methods 0.000 title claims abstract description 61
- 230000002093 peripheral effect Effects 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 238000009966 trimming Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 37
- 239000000853 adhesive Substances 0.000 claims description 25
- 230000001070 adhesive effect Effects 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 22
- 239000012790 adhesive layer Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000011282 treatment Methods 0.000 claims description 7
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 claims description 5
- 238000003486 chemical etching Methods 0.000 claims description 5
- 238000003754 machining Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 claims description 4
- 238000004299 exfoliation Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 230000007261 regionalization Effects 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 235000019592 roughness Nutrition 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000000181 anti-adherent effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000011324 bead Substances 0.000 description 2
- 229920001688 coating polymer Polymers 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229940087305 limonene Drugs 0.000 description 2
- 235000001510 limonene Nutrition 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000002998 adhesive polymer Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229920006120 non-fluorinated polymer Polymers 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- -1 organosilane compound Chemical class 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Definitions
- the present invention relates to a method of manufacturing a substrate-handle for temporarily bonding a substrate, in particular for applications in the fields of electronics, optics or optoelectronics.
- the invention also relates to a method of temporarily bonding a substrate to the substrate-handle and further aims a substrate-handle for temporary bonding of a substrate, as obtained by this method of manufacture.
- a support substrate which has a non-stick area in the center and a silicon crown (or glass) untreated on a peripheral area is thus obtained.
- This crown then ensures adhesion during bonding with the substrate on which an adhesive has been previously spread.
- a chemical attack at the peripheral portion of the stack weakens the bonding. Combined with the low adhesion obtained by the presence of the release layer, this attack makes possible the mechanical detachment of the substrate from its support.
- the carrier substrate thus obtained has a nonstick area in the center and an adhesive crown on a peripheral area so that it is not necessary to spread an adhesive component on the substrate.
- a second variant of the process can be envisaged with the following steps:
- peripheral part of the anti-adhesive component is removed by etching with a solvent of the anti-adhesive
- a support substrate having a central non-stick area an adhesive crown on a peripheral area is then obtained for bonding with a substrate.
- the present invention aims to remedy at least one of the aforementioned drawbacks. To this end, it proposes a method of manufacturing a substrate-handle intended for the temporary bonding of a substrate, the method comprising the steps of:
- the release layer comprising a central region and a peripheral region
- this method makes it possible to form a non-adhesive central portion on the support substrate and a peripheral cut-off portion, making it possible to receive the excess adhesive during bonding with the substrate so as to improve the flatness of the interface.
- this method is simple to implement and avoids performing a large number of preparation steps.
- the recess formed may have different types of shape, such as a step-shaped profile, a bevel or concave curvilinear shape.
- the term "recess" is distinguished from the typical canting or chamfering performed during the finishing of a substrate to facilitate its handling without generation of particles contaminating the clean rooms. This falling edge is illustrated in particular in a convex curvilinear shape for reasons of simplification and difference in scale between the dimension of the chamfer and the dimensions of the chamfered substrate. Thus it differs from the recess according to the present invention generally made according to angle / direction entering the volume of the substrate.
- the support substrate is solid. It is thus less fragile to handle in comparison with a substrate comprising a stack of layers and it has a volume with homogeneous chemical properties with respect in particular to etching reagents that can be used later.
- the adhesive / non-stickness measurements of a material have been made by inserting a layer of said material between two silicon substrates.
- the adhesion energy between these two silicon substrates assembled via this layer is greater than 1 J / m 2 or even greater than 1 .5 or even greater than 2 J / m 2 then it is a question of a layer of an adhesive material.
- the non-stick nature of a material is measured by inserting a layer of such material into the preceding stack to form a Si / adhesive / non-stick / Si stack.
- the adhesion energy is then measured by the same method.
- the layer in question is considered as nonstick when the measured adhesion energy is less than 900 mJ / m 2 and preferably less than 800 or even less than 500 mJ / m 2 .
- the dismounting of the substrate temporarily bonded to the handle substrate according to the method of the present document is all the easier as the difference in adhesion energy between the adhesive and the non-stick adhesive is greater than 100 mJ / cm 2 and advantageously greater than 500mJ / m 2 , or even greater than 1 J / m 2 .
- the recess formed in step c) consists in removing material from the periphery of the support substrate and the peripheral region of the release layer so that the recess has a width L, measured from the periphery. towards the center support substrate, substantially constant.
- width L varies at most 10 micrometers on the peripheral periphery of the support substrate.
- the recess is made very accurately to meet the expected value of width L to 10 micrometers.
- the recess formed in step c) has a height H of between 1 and 50 micrometers and a width L of between 1 and 50 mm.
- the height H is measured in a direction substantially perpendicular to the plane of the receiving face and the width L is measured in a radial direction.
- This height range H makes it possible to receive the surplus of adhesive and this range of width L ensures optimum bonding energy both for carrying out treatments on the substrate and for ensuring easy and good separation.
- the removal of material is carried out so that the width L varies by at most 1 micrometer (the value of the expected width L is obtained to within 1 micrometer).
- the homogeneity of the width L obtained guarantees a uniform subsequent bonding with the substrate, which then facilitates delamination by chemical etching or application of mechanical stress to the bonding interface between the substrate and the substrate-handle.
- the recess formed in step c) has a bottom whose roughness is between 1 and 500 nanometers RMS (acronym English of Root Mean Square) and preferably between 1 and 100 nanometers RMS. This roughness is particularly favorable for bonding with the substrate. All RMS roughnesses described in this document are determined by AFM atomic force microscopy on a field of 20x20 micrometers.
- the clipping of step c) is carried out by means of machining tools, such as a clipping saw or a ranger.
- This method is inexpensive and provides a high homogeneity in the removal of peripheral material.
- the width L of the trimming is obtained with a variation of only 10 microns and the height H with a variation of only 1 to 2 microns (in other words, the expected value of the height H is obtained to within 1 or 2 microns).
- the trimming of step c) is carried out by a photolithography step followed by an ion etching or chemical etching step.
- This method allows a precision of the homogeneity of the dimensions of the width L and the height H less than 1 micrometer.
- the clipping of step c) is carried out by a step of implanting ionic species, such as hydrogen, through the peripheral region of the nonstick layer followed by a treatment step Thermal exfoliation.
- ionic species such as hydrogen
- the release material is a fluorinated or non-fluorinated organosilane such as Octadecyl TricholoroSilane (OTS) or a fluorinated or non-fluorinated polymer such as the 2702 Electronic Grade Coating polymer (supplied by 3M TM).
- OTS Octadecyl TricholoroSilane
- a fluorinated or non-fluorinated polymer such as the 2702 Electronic Grade Coating polymer (supplied by 3M TM).
- the adhesion energy of these antiadhesives measured by the DCB method is 60 mJ / m 2 for the OTS and 200 m 2 / m 2 for the 2702 polymer (where the adhesive is the ZoneBond® 51 compound. 50).
- the support substrate comprises a material selected from silicon, silica, glass, sapphire, germanium or a metal.
- This wide choice of support substrate makes it possible to adapt the method according to the coefficient of thermal expansion in relation to that of the substrate, the thermal and mechanical resistance necessary for the rest of the process.
- the present invention also relates to a method of temporarily bonding a substrate to a substrate-handle, comprising the steps of:
- This method makes it possible to prepare in parallel the support substrate and the substrate to be bonded so as to optimize the duration of the process.
- the contacting of the substrate with the substrate-handle allows the adhesive layer to be distributed over the release layer and the surplus fill the recess until reaching the bottom of the recess whose roughness is optimal for bonding.
- This method creates a low energy bonding interface region at the nonstick layer core region and high bonding energy at the recess.
- 'electronic components' is meant in this document both complex components such as CMOS, memories, as simple components such as an electrical interconnection.
- the electronic components can be made by microelectronic processes including non-exhaustively etching, deposition, cleaning or other steps.
- the substrate comprises a material chosen from silicon, silica, glass, sapphire, germanium or a metal such as molybdenum, tungsten and copper, for example.
- the adhesive layer comprises a material selected from HT1010 or ZoneBond® 51.50 or WaferBOND® CR-200, supplied by Brewer Science.
- the adhesive energy provided by the ZoneBond® 51.50 adhesive measured by the previously described DCB method can reach 2J / m 2 .
- the process comprises, after step g), a step h) of applying to the front face of the substrate at least one processing step intended for the manufacture of electronic components, such as a rectification, a thinning, a polishing mechanical-chemical, etching, dielectric or metal deposition, pattern formation, passivation, heat treatment, or a combination of at least one of these treatments.
- a processing step intended for the manufacture of electronic components such as a rectification, a thinning, a polishing mechanical-chemical, etching, dielectric or metal deposition, pattern formation, passivation, heat treatment, or a combination of at least one of these treatments.
- the method comprises after step g), a step i) consisting of etching and / or applying a mechanical stress so as to separate the substrate from the substrate-handle.
- the mechanical stress may consist of the application of a blade at the interface between the substrate-handle and the substrate, a tensile force or a shear force. It can be applied for example by imposing a curvature on the assembly formed of the substrate and the substrate-handle, for example by stamping on a suitable preform.
- step g) further consists in applying a heat treatment under vacuum with a compression, for example 6 kN, to the stack formed by the substrate bonded to the substrate-handle.
- the method comprises after step i), a step j) of cleaning the substrate-handle to remove the glue residue so that the substrate-handle can be reused in step d).
- This cleaning in particular carried out by successive rinsing in an isopropanol solution and in a limonene solution, makes it possible to remove the portion of the adhesive layer transferred onto the substrate-handle during bonding.
- a substrate-handle as provided in step c) of the process is recovered.
- the method comprises a step k) performed after step j) of repeating at least once steps d) to i) allowing the recycling of the substrate-handle for the temporary bonding of a new substrate.
- the invention relates to a substrate-handle for temporarily bonding a substrate, the substrate-handle comprising a support substrate whose periphery has a recess delimiting a central portion of the support substrate which is covered with a layer nonstick, the recess being devoid of nonstick layer.
- the recess has a width L, measured from the periphery to the center of the support substrate, between 1 to 50 mm, the width L varying at most 1 micrometer along the peripheral periphery of the support substrate.
- the recess has a height H of between 1 and 50 microns and varying at most 1 micrometer along the peripheral periphery of the support substrate.
- the height H is measured in a direction substantially perpendicular to the plane of the support substrate.
- the height H can also be measured in a direction perpendicular to the width L of the recess.
- the recess has a bottom whose roughness is between 1 nanometer and 500 nanometers RMS.
- the invention relates to a removable stack comprising a substrate-handle as described above and a substrate comprising a rear face and a front face intended to receive electronic components, the rear face of the substrate being bonded to the substrate. handle and to the recess by an adhesive layer.
- FIG. 1 illustrates a schematic sectional view of a support substrate for the manufacture of a handle substrate according to step a) of one embodiment of the invention.
- FIG. 2 illustrates a schematic sectional view of a support substrate covered with a release layer according to step b) of one embodiment of the invention.
- FIG. 3 illustrates a schematic sectional view of a support substrate cut in accordance with step c) of one embodiment of the invention.
- FIG. 4 illustrates a schematic sectional view of a substrate bonded to a substrate-handle according to steps d) to g) of one embodiment of the invention.
- FIG. 5 illustrates a schematic sectional view of the application of a treatment to the substrate according to step h) of one embodiment of the invention.
- FIG. 6 illustrates a schematic sectional view of the separation of the substrate-handle and the substrate according to step i) of one embodiment of the invention.
- a support substrate 1 comprising a reception face 2 is provided according to step a) of the method.
- the material of the support substrate 1 is made of silicon but it can also be made of silica, glass, sapphire, germanium or a metal such as molybdenum, tungsten and copper, depending on the nature of the substrate 3 to be bonded and subsequent operations desired .
- a nonstick layer 4 is deposited on the receiving face 2 of the support substrate 1.
- the release layer 4 comprises a central region 5 and a peripheral region 6 respectively covering a central portion 7 and a peripheral portion 8 of the support substrate 1.
- This nonstick layer 4 comprises a release material, such as an organosilane compound selected from OTS supplied by Sigma Aldrich.
- the layer 4 of OTS is for example deposited by immersion of the substrate 3 for 5 minutes in a solution of OTS diluted in isooctane and having a concentration of 5.10 "3 mol / l
- a nonstick layer 4 having a thickness between 1 and 10 nanometers is then obtained.
- the non-stick layer 4 is made of 2702 Electronic Grade coating polymer supplied by 3M TM and is deposited by Spin Coating (or Spin Coating in English terminology) until a non-stick layer 4 is obtained. a thickness of about 5 nanometers.
- the support substrate 1 is dried in air for about 30 minutes.
- the support substrate 1 is cut away so as to remove the peripheral region 6 of the release layer 4 and the material of the support substrate 1 so as to form a recess 9 on a height H (measured in a direction substantially perpendicular to the plane of the receiving face 2) and a width L (measured in a direction of the periphery towards the support substrate center (1) and oriented substantially parallel to the plane of the receiving face 2) so as to produce a substrate handle 100 (step c).
- This clipping step is carried out using a machining tool, for example a standard diamond-shaped trimming saw (width 1.5 mm, supplied by DISCO) until recessing 9 of a height H is obtained. of 7 micrometers (measured in a direction perpendicular to the width L) and a width L of 15 mm.
- a machining tool such as a ranger can be used.
- the substrate handle 100 then obtained is formed of a support substrate 1 which has a recess 9 with a profile shaped step whose dimensions are homogeneous around the periphery of the support substrate 1. This is particularly useful for the quality of bonding and delamination with a substrate 3.
- the clipping of the support substrate 1 is carried out by a photolithography step followed by an ion etching or chemical etching step.
- This technique also makes it possible to improve the homogeneity of the width L and of the height H of the recess 9, which are then constant to within 1 micrometer along the periphery of the support substrate 1.
- the clipping is obtained by implantation of ionic species through the peripheral region 6 of the release layer 4 so as to create a weakening plane in the underlying peripheral portion 8 of the support substrate 1. Then, an exfoliation heat treatment is applied so as to obtain a blistering of the material leading to the formation of the recess 9. Again, this method is very precise and allows to respect an excellent homogeneity of the width L and the height H of the recess 9.
- the trimming 9 has a profile which differs from that shown in Figures 4 to 6 in that its profile has a concave curvilinear shape, a bevel or other. It is understood that the dimensions of the recess 9 remain homogeneous on the peripheral periphery of the support substrate 1 for all the profiles considered.
- a substrate 3 of which a front face 12 is intended for the manufacture of electronic components is brought into contact with the substrate-handle 100 (step e).
- the substrate 3 is composed of sapphire but may also be selected from silica, silicon, glass, germanium or a metal such as molybdenum, tungsten and copper.
- the rear face 13 of the substrate 3 has been prepared beforehand by the deposition of an adhesive layer 14 (step f). According to a possibility not illustrated, this adhesive layer 14 could alternatively or additionally be also deposited on the face comprising the recess 9 of the handle substrate 100.
- This adhesive layer 14 is for example deposited by spinning a ZoneBond adhesive.
- the adhesive layer 14 could be obtained by depositing HT1010 or WaferBOND® CR-200, supplied by Brewer Science.
- the substrate 3 thus prepared is dried at 90 ° C for 10 min and then subjected to heat treatment at 200 ° C for 2 min to remove solvent from the adhesive. Finally, the rear face 13 of the substrate 3 is brought into contact with the substrate-handle 100 under vacuum so that the adhesive layer 14 contacts the bottom 1 1 of the recess 9.
- the stack thus formed is subjected to a heat treatment at about 210 ° C accompanied by a compression of 6kN applied for 4 min.
- the formation of an adhesive layer bead 14 at the edge of the substrate 3 is avoided by the presence of the recess 9.
- the flatness of the adhesive layer 14 is improved and the bonding is optimized in comparison with that obtained with a substrate-handle 100 not cut-off.
- a bonding of an energy of about 600 mJ / m 2 is obtained between the handle substrate 100 and the substrate 3.
- the rear face 13 and / or the front face 12 of the substrate 3 has undergone one or more preparatory steps prior to bonding, for future applications, such as patterning.
- the front face 12 of the substrate 3 secured to the handle substrate 100 is subjected to one or more steps for the manufacture of electronic components that would have been difficult to achieve without temporary gluing (step h).
- steps for the manufacture of electronic components that would have been difficult to achieve without temporary gluing include, for example, rectification, thinning, chemical mechanical polishing, etching, dielectric or metal deposition, pattern formation, passivation or heat treatment.
- step i) a mechanical stress applied by a blade to the interface between the handle substrate 100 and the substrate 3 makes it possible to obtain separation of the substrate 3 (step i).
- the mechanical stress is exerted by applying a tensile and / or shear force or by bending the assembled structure.
- step i) is carried out by chemical etching in addition to or without the application of mechanical stress.
- the handle substrate 100 then recovered has a portion of the adhesive layer 14 transferred to the peripheral portion 8 of the support substrate 1 corresponding to the width L of the recess 9.
- a portion of the residual adhesive layer 14 in the central region of the substrate 3 and corresponding to the central region 5 of the nonstick layer 4 of the substrate-handle 100 indicates the good adhesion obtained by the temporary bonding.
- the handle substrate 100 is then rinsed with limonene and rinsed with isopropanol (step j).
- the portion of residual adhesive layer 14 in the central region of the substrate 3 can also be eliminated by cleaning carried out under the same conditions.
- the handle substrate 100 is recycled in a temporary bond-release cycle with a new substrate 3 (step k).
- the temporary bonding method according to the invention is made from a substrate-handle 100 whose width L of the recess 9 has a dimension of about 3 mm.
- the bonding energy obtained at the end of step g) is about 130 mJ / m 2.
- the process of the invention carried out under the conditions described above and from a substrate-handle 100 without recess 9 leads to a bonding energy of 60mJ / m2.
- the clipping thus allows to increase the bonding energy in correspondence with the width L of the recess 9.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1362845A FR3015110B1 (fr) | 2013-12-17 | 2013-12-17 | Procede de fabrication d’un substrat-poignee destine au collage temporaire d’un substrat |
PCT/FR2014/053354 WO2015092254A1 (fr) | 2013-12-17 | 2014-12-15 | Procédé de fabrication d'un substrat-poignée destiné au collage temporaire d'un substrat |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3084817A1 true EP3084817A1 (fr) | 2016-10-26 |
Family
ID=50102113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP14824062.5A Withdrawn EP3084817A1 (fr) | 2013-12-17 | 2014-12-15 | Procédé de fabrication d'un substrat-poignée destiné au collage temporaire d'un substrat |
Country Status (5)
Country | Link |
---|---|
US (1) | US9934995B2 (fr) |
EP (1) | EP3084817A1 (fr) |
KR (1) | KR20160098472A (fr) |
FR (1) | FR3015110B1 (fr) |
WO (1) | WO2015092254A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3077283B1 (fr) | 2018-01-30 | 2021-09-17 | Commissariat Energie Atomique | Procede d'encapsulation d'un dispositif microelectronique, comprenant une etape d'amincissement du substrat et/ou du capot d'encapsulation |
FR3086201B1 (fr) * | 2018-09-24 | 2020-12-25 | Commissariat Energie Atomique | Procede de decapage d’un substrat par transfert d’un film superficiel de polymere thermoplastique |
FR3103313B1 (fr) * | 2019-11-14 | 2021-11-12 | Commissariat Energie Atomique | Procédé de démontage d’un empilement d’au moins trois substrats |
FR3113771B1 (fr) * | 2020-08-27 | 2022-10-21 | Commissariat Energie Atomique | Procédé de fabrication d'un substrat-poignée destiné au collage temporaire d'un substrat. |
CN112259495A (zh) * | 2020-10-22 | 2021-01-22 | 绍兴同芯成集成电路有限公司 | 一种晶圆印刷工艺 |
TWI783366B (zh) * | 2021-02-03 | 2022-11-11 | 昇陽國際半導體股份有限公司 | 邊角不易碎裂的晶圓 |
FR3128058B1 (fr) * | 2021-10-08 | 2023-09-22 | Commissariat Energie Atomique | Procede de fabrication de composants sur les deux faces d’un substrat |
FR3139143A1 (fr) * | 2022-08-30 | 2024-03-01 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de transfert d’une couche adhesive en polymere(s) thermoplastique(s) d’un premier substrat vers un deuxieme substrat |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6117778A (en) * | 1998-02-11 | 2000-09-12 | International Business Machines Corporation | Semiconductor wafer edge bead removal method and tool |
JP4613709B2 (ja) * | 2005-06-24 | 2011-01-19 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
WO2009094558A2 (fr) * | 2008-01-24 | 2009-07-30 | Brewer Science Inc. | Procédé pour un montage réversible d'une tranche de dispositif sur un substrat de support |
US8324105B2 (en) * | 2010-08-13 | 2012-12-04 | Victory Gain Group Corporation | Stacking method and stacking carrier |
WO2013006865A2 (fr) * | 2011-07-07 | 2013-01-10 | Brewer Science Inc. | Procédés de transfert de tranches ou couches de dispositif entre des substrats de support et d'autres surfaces |
JP5591859B2 (ja) * | 2012-03-23 | 2014-09-17 | 株式会社東芝 | 基板の分離方法及び分離装置 |
-
2013
- 2013-12-17 FR FR1362845A patent/FR3015110B1/fr not_active Expired - Fee Related
-
2014
- 2014-12-15 WO PCT/FR2014/053354 patent/WO2015092254A1/fr active Application Filing
- 2014-12-15 KR KR1020167019274A patent/KR20160098472A/ko active Search and Examination
- 2014-12-15 EP EP14824062.5A patent/EP3084817A1/fr not_active Withdrawn
- 2014-12-15 US US15/105,847 patent/US9934995B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
Title |
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None * |
See also references of WO2015092254A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2015092254A1 (fr) | 2015-06-25 |
US9934995B2 (en) | 2018-04-03 |
US20170025301A1 (en) | 2017-01-26 |
FR3015110B1 (fr) | 2017-03-24 |
KR20160098472A (ko) | 2016-08-18 |
FR3015110A1 (fr) | 2015-06-19 |
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