EP3080847A4 - MANUFACTURE OF SOLAR CELL EMITTING REGIONS USING ION IMPLANTATION - Google Patents

MANUFACTURE OF SOLAR CELL EMITTING REGIONS USING ION IMPLANTATION

Info

Publication number
EP3080847A4
EP3080847A4 EP14869894.7A EP14869894A EP3080847A4 EP 3080847 A4 EP3080847 A4 EP 3080847A4 EP 14869894 A EP14869894 A EP 14869894A EP 3080847 A4 EP3080847 A4 EP 3080847A4
Authority
EP
European Patent Office
Prior art keywords
manufacture
solar cell
ion implantation
emitting regions
cell emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP14869894.7A
Other languages
German (de)
French (fr)
Other versions
EP3080847B1 (en
EP3080847A1 (en
Inventor
Timothy Weidman
David D Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunPower Corp
Original Assignee
SunPower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunPower Corp filed Critical SunPower Corp
Publication of EP3080847A1 publication Critical patent/EP3080847A1/en
Publication of EP3080847A4 publication Critical patent/EP3080847A4/en
Application granted granted Critical
Publication of EP3080847B1 publication Critical patent/EP3080847B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
EP14869894.7A 2013-12-09 2014-12-08 Solar cell emitter region fabrication using ion implantation Active EP3080847B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361913614P 2013-12-09 2013-12-09
US14/562,159 US9401450B2 (en) 2013-12-09 2014-12-05 Solar cell emitter region fabrication using ion implantation
PCT/US2014/069169 WO2015088992A1 (en) 2013-12-09 2014-12-08 Solar cell emitter region fabrication using ion implantation

Publications (3)

Publication Number Publication Date
EP3080847A1 EP3080847A1 (en) 2016-10-19
EP3080847A4 true EP3080847A4 (en) 2016-10-19
EP3080847B1 EP3080847B1 (en) 2019-04-10

Family

ID=53272043

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14869894.7A Active EP3080847B1 (en) 2013-12-09 2014-12-08 Solar cell emitter region fabrication using ion implantation

Country Status (14)

Country Link
US (2) US9401450B2 (en)
EP (1) EP3080847B1 (en)
JP (2) JP6636913B2 (en)
KR (1) KR102407023B1 (en)
CN (1) CN105659395B (en)
AU (1) AU2014364086B2 (en)
BR (1) BR112016013216B1 (en)
MX (1) MX2016006973A (en)
MY (1) MY192488A (en)
PH (1) PH12016501052A1 (en)
SA (1) SA516371270B1 (en)
TW (1) TWI655676B (en)
WO (1) WO2015088992A1 (en)
ZA (1) ZA201603437B (en)

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US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
US9627558B2 (en) * 2014-04-09 2017-04-18 Arizona Board Of Regents On Behalf Of Arizona State University Methods and apparatuses for manufacturing self-aligned integrated back contact heterojunction solar cells
US9263625B2 (en) * 2014-06-30 2016-02-16 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US9520507B2 (en) 2014-12-22 2016-12-13 Sunpower Corporation Solar cells with improved lifetime, passivation and/or efficiency
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CN113871494B (en) * 2020-06-30 2024-03-15 泰州隆基乐叶光伏科技有限公司 Solar cell and manufacturing method thereof
CN111816727A (en) * 2020-07-14 2020-10-23 普乐新能源科技(徐州)有限公司 An Interdigitated Back Contact Heterojunction Solar Cell Based on High Efficiency Doped Amorphous Silicon Technology Based on LPCVD
CN111739984A (en) * 2020-08-10 2020-10-02 浙江晶科能源有限公司 Solar cell and method of making the same
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CN114883424B (en) * 2022-05-25 2023-11-21 中国科学院电工研究所 A method for preparing a fully back-contact crystalline silicon heterojunction solar cell structure based on screen printing
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Also Published As

Publication number Publication date
ZA201603437B (en) 2018-11-28
KR102407023B1 (en) 2022-06-10
JP6636913B2 (en) 2020-01-29
TWI655676B (en) 2019-04-01
AU2014364086B2 (en) 2019-06-20
WO2015088992A1 (en) 2015-06-18
BR112016013216A2 (en) 2017-08-08
PH12016501052B1 (en) 2016-08-15
MY192488A (en) 2022-08-23
PH12016501052A1 (en) 2016-08-15
US20160315214A1 (en) 2016-10-27
JP2020092269A (en) 2020-06-11
EP3080847B1 (en) 2019-04-10
TW201528344A (en) 2015-07-16
US20150162483A1 (en) 2015-06-11
SA516371270B1 (en) 2021-01-14
US9716205B2 (en) 2017-07-25
JP7028853B2 (en) 2022-03-02
JP2017504950A (en) 2017-02-09
EP3080847A1 (en) 2016-10-19
BR112016013216B1 (en) 2022-06-14
AU2014364086A1 (en) 2016-03-24
MX2016006973A (en) 2016-09-27
CN105659395A (en) 2016-06-08
US9401450B2 (en) 2016-07-26
KR20160096084A (en) 2016-08-12
CN105659395B (en) 2018-02-02

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