EP3050125A1 - Cellule solaire photovoltaïque et procédé de réalisation de connexions métalliques dans une cellule solaire photovoltaïque - Google Patents

Cellule solaire photovoltaïque et procédé de réalisation de connexions métalliques dans une cellule solaire photovoltaïque

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Publication number
EP3050125A1
EP3050125A1 EP14771893.6A EP14771893A EP3050125A1 EP 3050125 A1 EP3050125 A1 EP 3050125A1 EP 14771893 A EP14771893 A EP 14771893A EP 3050125 A1 EP3050125 A1 EP 3050125A1
Authority
EP
European Patent Office
Prior art keywords
layer
diffusion barrier
contacting
barrier layer
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14771893.6A
Other languages
German (de)
English (en)
Inventor
Julia KUMM
Hassan SAMADI
Winfried Wolke
Philip Hartmann
Andreas Wolf
Daniel Biro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of EP3050125A1 publication Critical patent/EP3050125A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a photovoltaic solar cell according to the preamble of claim 1 2 and to a method for producing a metallic contacting of a photovoltaic solar cell according to the preamble of claim 1.
  • Typical photovoltaic solar cells have metallization structures for electrically contacting the solar cell, for example for electrical series connection of the solar cell to an adjacent solar cell by means of an electrically conductive cell connector in a solar cell module.
  • the screen printing technology is typically used to form the aforementioned metallic contact structures.
  • metallic contact structures of a plurality of materials, in particular a plurality of metals, and in particular to provide a solder pad designed as a silver layer, which can be electrically conductively connected to a cell connector by means of soldering methods known per se.
  • the present invention is therefore an object of the invention to provide a method for producing a metallic contact of a photovoltaic solar cell and such a photovoltaic solar cell, which allow production on an industrial scale and provide an alternative to the aforementioned Siebdrucktechnolog ie.
  • This object is achieved by a method for producing a metallic contacting of a photovoltaic solar cell according to claim 1 and by a photovoltaic solar cell according to claim 12.
  • Preferably embodiments of the method according to the invention can be found in claims 2 to 1 1;
  • embodiments of the solar cell according to the invention can be found in claims 12 to 1. 5.
  • the wording of all claims is hereby explicitly incorporated by reference into the description.
  • the inventive method is preferably designed to form a photovoltaic solar cell according to the invention, in particular an advantageous embodiment thereof.
  • the photovoltaic solar cell according to the invention is preferably formed by means of the method according to the invention, in particular a preferred embodiment thereof.
  • the method according to the invention for producing a metallic contacting of a photovoltaic solar cell comprises the following method steps:
  • a semiconductor substrate is provided, and in a method step B, an aluminum-containing contact-making layer is applied directly or preferably indirectly to one side of the semiconductor substrate.
  • This contacting layer forms the electrically conductive connection, for example, to solder pads, to cell connectors or to a busbar.
  • the contact layer therefore has a layer resistance of less than 20mOhm.
  • the contact layer is advantageously designed as a rear-side mirror for reflection of the electromagnetic radiation not absorbed in the semiconductor substrate.
  • a diffusion barrier layer which acts as a diffusion barrier at least in relation to aluminum, is applied directly or indirectly directly to the contacting layer.
  • a solderable layer made of a solderable material is applied indirectly or preferably directly to the diffusion barrier layer.
  • the diffusion barrier layer and the bonding layer are each deposited by a PVD method.
  • the present invention is based on the recognition that the use of a physical vapor deposition (PVD) to form the contacting layer of a photovoltaic solar cell offers considerable advantages: PVD AI is able - in contrast to silk-printed AI - to not only To contact doped, but also moderately n-doped silicon with a low contact resistance, which allows the implementation of novel cell concepts, such as n-doped base.
  • PVD AI physical vapor deposition
  • silk-printed AI - to not only To contact doped, but also moderately n-doped silicon with a low contact resistance, which allows the implementation of novel cell concepts, such as n-doped base.
  • thinner wafers save semiconductor material costs and less contact material is needed because of the thinner order (for example 2 ⁇ PVD-AI instead of 20pm SD-AI).
  • a significant advantage is a lower material consumption of the solderable layer, such as a silver layer, since only a very thin layer of silver can be used over the entire surface instead of previously usual much thicker local silver pads or their replacement by NiV.
  • I pli last advantage is also due to the fact that the diffusion barrier by PVD can be generated very reliable dense and therefore the solderable layer is formed so thin only in combination with the applied by PVD diffusion barrier.
  • PVD processes are not used in particular for the formation of an aluminum contacting layer. This is due, inter alia, to the fact that an aluminum-containing contacting layer applied by means of a PVD process can not be electrically conductively connected by means of an ordinary soldering process, for example with a cell connector.
  • the method according to the invention now for the first time offers the possibility of inexpensively using an aluminum-containing contacting layer by means of PVD methods in the production of the metallic contacting structure of a photovoltaic solar cell.
  • a solderable layer is indirectly applied to the contacting layer, so that the solderable layer is connected in an electrically conductive manner to the contacting layer.
  • the solderable Layer can thus be electrically conductively connected by means of a soldering process by means of a method known per se and already industrially tried.
  • the diffusion barrier layer is arranged between the contacting layer and the solderable layer.
  • the diffusion barrier layer is formed such that there is an electrically conductive connection between the solderable layer and the contacting layer, but on the other hand aluminum can not diffuse through the diffusion barrier layer to the solderable layer.
  • both the contacting layer and the diffusion barrier layer are applied by means of a PVD method. This results in the advantage that both layers can be applied together in an uncomplicated manner in terms of apparatus.
  • a particularly simple and thus cost-effective method configuration results in an advantageous embodiment in which the diffusion barrier layer is applied directly on the contacting layer.
  • an advantageous process simplification is achieved in which the solderable layer is applied directly to the diffusion barrier layer.
  • the solderable layer is applied directly to the diffusion barrier layer.
  • Layer and diffusion barrier layer at least one, preferably applied exactly one intermediate layer.
  • This intermediate layer offers the advantage that an increased adhesion between the diffusion barrier layer and the solderable layer can be achieved by the intermediate layer.
  • the intermediate layer is therefore preferably formed as a titanium intermediate layer, more preferably with a thickness in the range of 5 nm to 100 nm, more preferably 10 nm to 30 nm.
  • a further improvement of the method according to the invention and the solar cell according to the invention described below is achieved by introducing oxygen into the diffusion barrier layer.
  • the introduction of oxygen into the diffusion barrier layer has the advantage that the barrier effect of the diffusion barrier layer is increased. This is the case in particular if the barrier layer has grain boundaries, since here oxygen also attaches at least partially along the grain boundaries. If aluminum begins to diffuse into the grain boundaries in a subsequent process step, it encounters the oxygen which typically forms with the aluminum in an oxide. This alumina is a particularly effective barrier to the diffusion of other aluminum and also, in particular, crams the fast diffusion paths along the grain boundaries. As a result, a significantly greater thermal stability of the barrier layer against aluminum diffusion is achieved.
  • the oxygen partially forms oxide compounds with the titanium interlayer so that alloying of the titanium interlayer with the solderable material is reduced.
  • the solderable material is thus contaminated to a lesser extent and to ensure solderability it is sufficient to apply thinner layers of the solderable material. Thus, a material savings in terms of costly solderable material is achieved.
  • an intermediate layer is arranged between the solderable layer and the diffusion barrier layer
  • oxygen is advantageously also introduced into the intermediate layer in a further preferred embodiment.
  • the barrier effect against the solderable material is further increased.
  • an increase in the barrier effect is achieved by initially introducing oxygen into the diffusion barrier layer after application of the diffusion barrier layer and before applying the intermediate layer, and then introducing oxygen into the intermediate layer after application of the intermediate layer in a further, separate process step.
  • oxygen into the diffusion barrier layer is preferably carried out from the gas phase.
  • oxygen can already be introduced into the diffusion barrier layer and / or intermediate layer by the oxygen of the ambient atmosphere. It can thus be achieved by discharging the semiconductor substrate from any process chambers and in contact with ambient air at room temperature, preferably for a period of time in the range 1 min to 24 h, an intrusion of oxygen.
  • the penetration of oxygen takes place in situ in a process chamber in which, after the diffusion barrier layer has been deposited and / or after the intermediate layer has been deposited, oxygen or an oxygen-containing gas mixture is introduced into the process chamber.
  • the above-mentioned object is furthermore achieved by a photovoltaic solar cell according to claim 12.
  • the photovoltaic solar cell according to the invention has a semiconductor substrate and an aluminum-containing contacting layer arranged directly or indirectly on one side of the semiconductor substrate, which is electrically conductively connected to the semiconductor substrate as the contacting layer. It is essential that on the contacting layer directly or indirectly a diffusion barrier layer is arranged, which acts as a diffusion barrier at least to aluminum and that on the contacting layer directly or indirectly a solderable layer is arranged from a solderable material.
  • the contacting layer is electrically conductively connected to the solderable layer.
  • the aluminum-containing contacting layer can be deposited by means of a PVD method.
  • a particularly simple and cost-effective embodiment results in an advantageous embodiment in that the diffusion barrier layer is applied directly on the contacting layer, and the solderable layer is applied directly on the diffusion barrier layer.
  • the diffusion barrier layer comprising one or more of Ti, N, W, O is formed.
  • the diffusion barrier layer is preferably formed as a TiN layer, as a TiW layer or as a TiWN layer. This results in the advantage that both Ti and W and N2 are comparatively readily available and thus favorable (in contrast to Ta, for example). Nevertheless, TiN or TiW; N very effective diffusion barriers against AI even at a temperature step.
  • At least the diffusion barrier layer and the solderable layer are applied in situ.
  • the two abovementioned layers are thus applied in a PVD system, without a discharging of the semiconductor substrate occurring between the application of the two layers.
  • the process time and also the process costs are reduced, since the process atmosphere for both layers has to be produced only once and, moreover, feed-in and discharge processes are saved.
  • the contacting layer is applied by means of a PVD process.
  • the contacting layer, the diffusion barrier layer and the solderable layer are applied in situ. This will continue process time and also process costs will be saved.
  • an annealing step takes place between method step B and method step C.
  • An annealing step is known per se and is presently preferably carried out at temperatures in the range 300 ° C to 450 ° C for a period of time in the range of 2 min to 30 min. This results in the advantage that without an annealing step, the solar cell would have a worse efficiency, since both passivation quality and electrical contact are usually improved by a temperature step.
  • the annealing step thus represents an important boundary condition. Overall, preferably only one annealing step is carried out, but this will preferably take place after Al metallization and, if appropriate, after a contact formation by means of LFC.
  • an annealing step is carried out after method step D.
  • a passivation layer is applied to the semiconductor substrate between method steps A and B in a method step A1.
  • the contacting layer is applied indirectly or preferably directly to the passivation layer, and after method step B, preferably according to method step D, an electrically conductive connection between the contacting layer and the semiconductor substrate is produced at a plurality of local areas.
  • an electrically conductive connection between the contacting layer and the semiconductor substrate is produced at a multiplicity of point-like contacting points, so that a surface passivation of the semiconductor substrate is possible by means of the passivation layer and nevertheless a sufficient electrical conductivity is given due to the plurality of point contacts.
  • it is advantageous to produce the point contacts by means of the LFC method known per se, as described, for example, in DE 1 00461 70 A1.
  • both the passivation layer is opened locally at a plurality of positions, as well as the electrically conductive Connection is generated.
  • the contacting layer or the total stack of contacting layer, diffusion barrier and solderable layer advantageously has the thinnest and most homogeneous possible layer thickness.
  • the proposed layer stack is preferably formed with a total layer thickness of a few meters, preferably less than 5 pm, in particular less than 3 pm, in order to ensure error-free production by means of the LFC method.
  • the deposition with PVD (as opposed to screen printing) and the low total thickness ensure a high homogeneity (or a small absolute layer thickness variation of a maximum of 1 pm, rather less) of the layer, so that the laser parameters are set with low total power and very precise can. Thus, damage to the semiconductor material can be minimized.
  • the laser parameters and / or the material parameters of the selected layers are advantageously selected such that the contacting layer and the semiconductor substrate are locally melted, but the diffusion barrier layer is only slightly, preferably not melted.
  • the local introduction of the material of the contacting layer is reinforced in the semiconductor substrate and reduces penetration of the material of the diffusion barrier layer and the solderable layer in the semiconductor substrate, preferably avoided. Therefore, it is particularly advantageous the use of a diffusion barrier layer having a higher melting point than the melting point of the contacting layer and the
  • Melting point of the semiconductor substrate preferably, a temperature difference of the melting points of at least 500 ° C, preferably at least 1 000 ° C before.
  • titanium nitride as a diffusion barrier layer is particularly advantageous since it has a comparatively high melting point of about 2950 ° C., compared with a melting point of, for example, aluminum as the contacting layer of 660 ° C.
  • the photovoltaic solar cell whose metallic contacting structure is formed by means of the method according to the invention and / or the photovoltaic solar cell according to the invention is preferably designed as a silicon solar cell known per se. It is within the scope of the invention to form typical solar cell structures, with the difference that according to the invention for forming at least one metallic contacting of the photovoltaic solar cell as described above, an aluminum-containing contacting layer, a diffusion barrier layer and a solderable layer is applied, wherein at least diffusion barrier layer and contacting layer are applied by a PVD method.
  • the solar cell according to the invention is advantageous to form as a per se known PERC solar cell, as described, for example, in Blakers et al. , Applied Physics Letters, vol. 55 (1 989) pp. 1363-5 or S. Mack et al. , 35th IEEE Photovoltaic Specialists Conference, 201 0.
  • the metallic contacting remote from the incident radiation when the solar cell is used is formed.
  • Such contacting is typically referred to as backside contacting.
  • the solar cell according to the invention is preferably designed as a photovoltaic silicon solar cell.
  • the semiconductor substrate is preferably formed as a silicon wafer.
  • Process steps B and C are preferably carried out by means of PVD, particularly preferably in a common process, more preferably in situ. Further preferably, process step D also takes place by means of PVD, in particular in situ with process steps B and C.
  • FIGS 1 to 5 an embodiment of a method according to the invention for producing a metallic contact of a photovoltaic solar cell
  • FIGS. 6 to 8 show an exemplary embodiment of a method according to the invention for producing a metallic contacting of a photovoltaic solar cell which can be contacted on the back side.
  • Figures 1 to 8 show schematic, not to scale partial sections of a solar cell in each stage of the process. The solar cell continues in mirror symmetry to the right and left.
  • FIGS. 1 to 8 the same reference numerals designate the same or similar elements.
  • FIG. 1 shows the exemplary embodiment of the method according to the invention after a method step A, in which a semiconductor substrate 10 designed as a silicon wafer is provided.
  • FIGS. 1 to 5 the front side of the solar cell facing the light incidence during use is shown at the top in each case.
  • the semiconductor substrate 10 has an emitter 3 on the front side. This emitter can be formed by diffusion in the semiconductor substrate 10. It is also possible to mount the emitter 3 as a separate layer on the semiconductor substrate 10.
  • the semiconductor substrate 10 is p-doped as a base and the emitter n-doped. Likewise, a reversal of doping types is within the scope of the invention.
  • a passivating optical antireflection layer 2 Arranged on the emitter 3 is a passivating optical antireflection layer 2, which may be formed as a silicon nitride layer in a manner known per se.
  • a metallic front side contacting is further arranged, which may be formed in a conventional manner as a known comb-like or double-comb-like contacting structure.
  • a metallic front side contacting is further arranged, which may be formed in a conventional manner as a known comb-like or double-comb-like contacting structure.
  • two metallic fingers 1 of the front-side contact running perpendicular to the plane of the drawing are shown.
  • the fingers 1 penetrate the antireflection layer 2 and are connected to the Em iter 3 electrically conductive.
  • a passivation layer 4 is applied over the whole area to the semiconductor substrate 10.
  • the passivation layer is formed by means of PECVD as Al 2 O 3 layer and has a thickness in the range 20 nm to 200 nm, in the present case of about 1 00 nm.
  • the passivation layer can consist entirely or partially of thermally produced SiO 2 and can be wholly or partly applied by means of PECVD as SiN x layer or SiO x layer
  • a contacting layer 5 designed as an aluminum layer is then applied to the passivation layer 4 on the back side over the entire surface thereof.
  • the contacting layer 5 is produced in a PVD process.
  • a diffusion barrier layer 6 formed as a TiN layer is applied, likewise by means of a PVD method.
  • the diffusion barrier layer has a thickness in the range of 20 nm to 300 nm, in the present case of about 00 nm.
  • a thin Ti layer with a thickness in the range 1 nm to 50 nm, in the present case about 25 nm is inserted, which serves as a coupling agent between Ag and TiN.
  • a solderable layer 7 designed as a silver layer is applied covering the entire surface of the diffusion barrier layer 6 as a cover layer, likewise by means of a PVD method.
  • the solderable layer 7 consists of NiV or NiCr, which is optionally protected by a thin Ag layer from oxidation.
  • a Ti adhesion promoter layer can be dispensed with in this embodiment.
  • the local melting produces a point-like electrical contacting, which in particular penetrates the passivation layer 4. Furthermore, in the solidification process, an aluminum-doped high-doping region 9 is locally generated at the contacting points, which lowers the contact resistance and the surface recombination at the contacts and thus further increases the efficiency of the solar cell.
  • the local melting takes place in such a way that a temperature above the melting points of the contacting layer 5 and the semiconductor substrate 10, but below the melting point of the diffusion barrier layer 6, is present.
  • the diffusion barrier layer is thus not or only slightly melted. This enhances the local introduction of the material of the contacting layer into the semiconductor substrate and prevents or at least reduces the penetration of the material of the diffusion barrier layer and of the solderable layer into the semiconductor substrate
  • FIG. 5 likewise shows an exemplary embodiment of a photovoltaic solar cell according to the invention, which has the semiconductor substrate 10 with the contacting layer 5 directly arranged on the rear side as an aluminum layer, which is electrically connected to the semiconductor substrate 10 in a punctiform manner through the passivation layer 4.
  • the diffusion barrier layer 6 is arranged directly, which acts as a diffusion barrier at least with respect to the aluminum.
  • an intermediate adhesion promoter layer, which comprises titanium formed as a silver layer solderable layer 7.
  • the contacting layer 5 is, as described above, on the one hand electrically connected to the semiconductor substrate 1 0 and on the other hand with the solderable layer 7.
  • Figures 6 to 8 show a second embodiment of a method according to the invention.
  • the method according to the invention can be used particularly advantageously for back-contacted solar cells.
  • one or more metallic contacting structures for contacting one or more emitter regions and one or more metallic contacting structures for contacting one or more base regions of the solar cell are arranged on the side facing away from the incident radiation.
  • Rear-contacted solar cells have the advantage that there is no shading of the front side due to metallic contact structures and, moreover, that simpler series connection in a solar cell module is possible.
  • FIG. 6 shows the second exemplary embodiment of the method according to the invention after a method step A, in which a semiconductor substrate 10 designed as a silicon wafer is provided.
  • the semiconductor substrate is n-doped and has an n-doped region on the front side, a so-called front surface field (FSF) 22.
  • FSF front surface field
  • the front side of the photovoltaic solar cell is covered by an antireflection layer 2.
  • Emitter regions 3 p-doped and a plurality of n-doped high doping regions, so-called back surface fields (BSF) 24, are formed on the rear side of the semiconductor substrate 1 0 by means of diffusion of corresponding dopants.
  • BSF back surface fields
  • a passivation layer 4 is applied in a method step A1.
  • the passivation layer 4 was applied over the whole area and opened locally at each emitter region 3 and at each BSF region 24.
  • FIG. 7 shows the state after a process step B, in which a contacting layer 5 formed as an aluminum layer has been applied over the entire area to the rear side.
  • a contacting layer 5 formed as an aluminum layer has been applied over the entire area to the rear side.
  • the aluminum layer penetrates the passivation layer, so that in this process state an electrical contacting of both the emitter regions 3 and the BSF regions 24 is present.
  • a diffusion barrier layer 6 formed as a TiN layer is applied.
  • the diffusion barrier layer 6 is in turn formed over the whole area by a solderable layer 7 made of silver.
  • FIG. 8 shows a process state in which an electrical separation of the metallic contacting for the emitter regions 3 on the one hand and the BSF regions 24 on the other hand was carried out by severing the solderable layer 7, diffusion barrier layer 6 and contacting layer 5 so that trenches 25 between the opposite ones Forming polarization types for electrical insulation.
  • the metallic contacting structures can be formed here in a manner known per se as comb-like or double-comb-like structures.
  • the formation known in the case of back contact cells is advantageous as intermeshing comb-like structures, so-called "integral contacts".

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de réalisation de connexions métalliques dans une cellule solaire photovoltaïque, comprenant les étapes suivantes : A) préparation d'un substrat semi-conducteur, et B) dépôt d'une couche de connexion contenant de l'aluminium indirectement ou directement sur une face du substrat semi-conducteur. L'invention est caractérisée en ce que, dans une étape de procédé C), on dépose une couche barrière de diffusion, qui fait fonction de barrière de diffusion au moins vis-à-vis de l'aluminium, indirectement ou directement sur la couche de connexion et, dans une étape de procédé D), on dépose une couche soudable, constituée d'un matériau soudable, directement ou indirectement sur la couche barrière de diffusion, et en ce qu'on réalise la couche barrière de diffusion et la couche de connexion en utilisant un procédé de dépôt PVD.
EP14771893.6A 2013-09-27 2014-09-23 Cellule solaire photovoltaïque et procédé de réalisation de connexions métalliques dans une cellule solaire photovoltaïque Withdrawn EP3050125A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013219560.5A DE102013219560A1 (de) 2013-09-27 2013-09-27 Photovoltaische Solarzelle und Verfahren zum Herstellen einer metallischen Kontaktierung einer photovoltaischen Solarzelle
PCT/EP2014/070189 WO2015044109A1 (fr) 2013-09-27 2014-09-23 Cellule solaire photovoltaïque et procédé de réalisation de connexions métalliques dans une cellule solaire photovoltaïque

Publications (1)

Publication Number Publication Date
EP3050125A1 true EP3050125A1 (fr) 2016-08-03

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EP14771893.6A Withdrawn EP3050125A1 (fr) 2013-09-27 2014-09-23 Cellule solaire photovoltaïque et procédé de réalisation de connexions métalliques dans une cellule solaire photovoltaïque

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US (1) US20160247945A1 (fr)
EP (1) EP3050125A1 (fr)
DE (1) DE102013219560A1 (fr)
WO (1) WO2015044109A1 (fr)

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WO2015044109A1 (fr) 2015-04-02
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