EP3008731A4 - Speichervorrichtungen und speicherbetriebsverfahren - Google Patents

Speichervorrichtungen und speicherbetriebsverfahren Download PDF

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Publication number
EP3008731A4
EP3008731A4 EP14811475.4A EP14811475A EP3008731A4 EP 3008731 A4 EP3008731 A4 EP 3008731A4 EP 14811475 A EP14811475 A EP 14811475A EP 3008731 A4 EP3008731 A4 EP 3008731A4
Authority
EP
European Patent Office
Prior art keywords
memory
operational methods
memory devices
devices
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP14811475.4A
Other languages
English (en)
French (fr)
Other versions
EP3008731A1 (de
EP3008731B1 (de
Inventor
Wataru Otsuka
Takafumi Kunihiro
Tomohito Tsushima
Makoto Kitagawa
Jun Sumino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of EP3008731A1 publication Critical patent/EP3008731A1/de
Publication of EP3008731A4 publication Critical patent/EP3008731A4/de
Application granted granted Critical
Publication of EP3008731B1 publication Critical patent/EP3008731B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0071—Write using write potential applied to access device gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0085—Write a page or sector of information simultaneously, e.g. a complete row or word line
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0088—Write with the simultaneous writing of a plurality of cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials
EP14811475.4A 2013-06-10 2014-06-09 Speichervorrichtungen und speicherbetriebsverfahren Active EP3008731B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/914,415 US9349450B2 (en) 2013-06-10 2013-06-10 Memory devices and memory operational methods including single erase operation of conductive bridge memory cells
PCT/US2014/041591 WO2014200936A1 (en) 2013-06-10 2014-06-09 Memory devices and memory operational methods

Publications (3)

Publication Number Publication Date
EP3008731A1 EP3008731A1 (de) 2016-04-20
EP3008731A4 true EP3008731A4 (de) 2017-02-22
EP3008731B1 EP3008731B1 (de) 2019-08-07

Family

ID=52005353

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14811475.4A Active EP3008731B1 (de) 2013-06-10 2014-06-09 Speichervorrichtungen und speicherbetriebsverfahren

Country Status (7)

Country Link
US (4) US9349450B2 (de)
EP (1) EP3008731B1 (de)
JP (1) JP6258476B2 (de)
KR (1) KR101813777B1 (de)
CN (1) CN105264611B (de)
TW (1) TWI546809B (de)
WO (1) WO2014200936A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349450B2 (en) 2013-06-10 2016-05-24 Micron Technology, Inc. Memory devices and memory operational methods including single erase operation of conductive bridge memory cells
KR102151183B1 (ko) * 2014-06-30 2020-09-02 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
US9373397B1 (en) * 2014-12-04 2016-06-21 Sony Corporation Page programming sequences and assignment schemes for a memory device
US9911494B1 (en) 2017-01-11 2018-03-06 Western Digital Technologies, Inc. Overlapping write schemes for cross-point non-volatile memory devices
US9928907B1 (en) 2017-01-27 2018-03-27 Western Digital Technologies, Inc. Block erase schemes for cross-point non-volatile memory devices
IT201800000555A1 (it) * 2018-01-04 2019-07-04 St Microelectronics Srl Architettura di decodifica di riga per un dispositivo di memoria non volatile a cambiamento di fase e relativo metodo di decodifica di riga
JP6490840B1 (ja) * 2018-01-05 2019-03-27 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． メモリデバイス
WO2020147119A1 (en) * 2019-01-18 2020-07-23 Yangtze Memory Technologies Co., Ltd. Source contact structure of three-dimensional memory devices and fabrication methods thereof
CN118541755A (zh) * 2022-10-28 2024-08-23 长江先进存储产业创新中心有限责任公司 存储装置及其寻址方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8107273B1 (en) * 2008-07-28 2012-01-31 Adesto Technologies Corporation Integrated circuits having programmable metallization cells (PMCs) and operating methods therefor
US20130088911A1 (en) * 2011-10-07 2013-04-11 Elpida Memory, Inc. Semiconductor memory device and semiconductor device

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6778421B2 (en) 2002-03-14 2004-08-17 Hewlett-Packard Development Company, Lp. Memory device array having a pair of magnetic bits sharing a common conductor line
JP2003331585A (ja) * 2002-05-08 2003-11-21 Toshiba Corp 不揮発性半導体記憶装置
JP4545423B2 (ja) 2003-12-09 2010-09-15 ルネサスエレクトロニクス株式会社 半導体装置
US8504798B2 (en) 2003-12-30 2013-08-06 Sandisk Technologies Inc. Management of non-volatile memory systems having large erase blocks
JP4709523B2 (ja) * 2004-10-14 2011-06-22 株式会社東芝 不揮発性半導体記憶装置
DE102005004434A1 (de) 2005-01-31 2006-08-10 Infineon Technologies Ag Verfahren und Vorrichtung zur Ansteuerung von Festkörper-Elektrolytzellen
US8559209B2 (en) 2011-06-10 2013-10-15 Unity Semiconductor Corporation Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements
JP2007026492A (ja) * 2005-07-13 2007-02-01 Sony Corp 記憶装置及び半導体装置
US7949845B2 (en) 2005-08-03 2011-05-24 Sandisk Corporation Indexing of file data in reprogrammable non-volatile memories that directly store data files
US7409489B2 (en) 2005-08-03 2008-08-05 Sandisk Corporation Scheduling of reclaim operations in non-volatile memory
US7669003B2 (en) 2005-08-03 2010-02-23 Sandisk Corporation Reprogrammable non-volatile memory systems with indexing of directly stored data files
US7552271B2 (en) 2005-08-03 2009-06-23 Sandisk Corporation Nonvolatile memory with block management
US7558906B2 (en) 2005-08-03 2009-07-07 Sandisk Corporation Methods of managing blocks in nonvolatile memory
JP4533956B2 (ja) * 2005-08-03 2010-09-01 サンディスク コーポレイション フラッシュメモリシステムのデータ記憶容量の解放
EP1977357B1 (de) 2006-01-20 2010-11-03 ExxonMobil Upstream Research Company Verfahren und system zur evaluierung von gruppen von in threads vorliegenden verbindungen
US7732800B2 (en) 2006-05-30 2010-06-08 Macronix International Co., Ltd. Resistor random access memory cell with L-shaped electrode
US7583546B2 (en) * 2007-06-08 2009-09-01 Qimonda Ag Apparatus and method of operating an integrated circuit
US8737151B2 (en) 2007-07-26 2014-05-27 Unity Semiconductor Corporation Low read current architecture for memory
WO2009097681A1 (en) 2008-02-04 2009-08-13 Mosaid Technologies Incorporated Flexible memory operations in nand flash devices
US8068365B2 (en) 2008-02-04 2011-11-29 Mosaid Technologies Incorporated Non-volatile memory device having configurable page size
US7876598B2 (en) 2008-02-28 2011-01-25 Qimonda Ag Apparatus and method for determining a memory state of a resistive n-level memory cell and memory device
JP5222619B2 (ja) * 2008-05-02 2013-06-26 株式会社日立製作所 半導体装置
JP5268481B2 (ja) 2008-07-31 2013-08-21 株式会社東芝 不揮発性半導体記憶装置
JP2010044827A (ja) * 2008-08-13 2010-02-25 Toshiba Corp 不揮発性半導体記憶装置
US7969782B2 (en) 2008-09-26 2011-06-28 Micron Technology, Inc. Determining memory page status
US7885097B2 (en) * 2008-10-10 2011-02-08 Seagate Technology Llc Non-volatile memory array with resistive sense element block erase and uni-directional write
KR101559843B1 (ko) * 2009-03-25 2015-10-15 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치
US8380881B2 (en) 2009-11-10 2013-02-19 Broadcom Corporation Synchronizing data transmission between a wireless network and a wired network
JP2011233181A (ja) * 2010-04-23 2011-11-17 Nihon Spansion Ltd 不揮発性半導体メモリ装置、およびデータ消去方法
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2013191256A (ja) * 2012-03-14 2013-09-26 Elpida Memory Inc 半導体装置
CN103118300A (zh) 2013-02-06 2013-05-22 北京佳视互动科技股份有限公司 一种网络媒体流的播放控制方法及装置
JP6215447B2 (ja) 2013-04-05 2017-10-18 エルジー エレクトロニクス インコーポレイティド 無線通信システムでｍａｃエンティティを確立／リリースするための方法及びこのための装置
US9042158B2 (en) 2013-05-21 2015-05-26 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with protective resistance film
US9349450B2 (en) 2013-06-10 2016-05-24 Micron Technology, Inc. Memory devices and memory operational methods including single erase operation of conductive bridge memory cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8107273B1 (en) * 2008-07-28 2012-01-31 Adesto Technologies Corporation Integrated circuits having programmable metallization cells (PMCs) and operating methods therefor
US20130088911A1 (en) * 2011-10-07 2013-04-11 Elpida Memory, Inc. Semiconductor memory device and semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2014200936A1 *

Also Published As

Publication number Publication date
KR101813777B1 (ko) 2017-12-29
EP3008731A1 (de) 2016-04-20
US20190080759A1 (en) 2019-03-14
US10622067B2 (en) 2020-04-14
TWI546809B (zh) 2016-08-21
CN105264611B (zh) 2019-03-29
KR20160013112A (ko) 2016-02-03
US20160267978A1 (en) 2016-09-15
US20140362633A1 (en) 2014-12-11
WO2014200936A1 (en) 2014-12-18
EP3008731B1 (de) 2019-08-07
US20190318782A1 (en) 2019-10-17
US10438661B2 (en) 2019-10-08
US9349450B2 (en) 2016-05-24
JP6258476B2 (ja) 2018-01-10
CN105264611A (zh) 2016-01-20
US11295812B2 (en) 2022-04-05
TW201511006A (zh) 2015-03-16
JP2016525764A (ja) 2016-08-25

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