EP2954258B1 - Grid lamp having a 2d-array of reflector cells and leds - Google Patents

Description

The invention relates to a grid lamp, comprising a plurality of reflector cells, each having a neck opening and a light exit opening, and having a plurality of semiconductor light sources in the region of the neck openings. The invention also relates to a method for producing a grid lamp. The invention is particularly applicable to LED grid lights for interior lighting, in particular room lighting.

A variant of luminaires for general lighting, in particular room lighting (for example in offices or meeting rooms), are flat LED luminaires with reflector cells arranged in a pattern or grid ("louvre luminaires"). Each of these reflector cells is associated with a light-emitting diode (LED), which is arranged centrally to a neck opening of this reflector cell. In comparison to pyramid and prism plates or so-called "brightness enhancement" films, such louvre luminaires offer better glare reduction.

In the design of louvre luminaires, there is the difficulty that when a reflector cell is so small that its neck opening is only slightly larger than the associated LED, high demands are placed on precision of the shape and arrangement of the reflector cell and precision of positioning of the reflector cell LED resulted. In addition, there is the problem here with the use of metallic reflector cells that the protective distances between current-carrying components and the reflector cell are difficult to comply. On the other hand, if the neck opening is substantially larger than the LED, an associated light distribution pattern often has undesirable edges and bumps.

In US 2011/0182065 A1 a raster lamp is described in which in each reflection cell, a multi-chip light emitter is arranged with four disposed in a 2 × 2 matrix solid-state light emitters, wherein one of the four solid-state light emitter of the multi-chip light emitter emits red light and the other three solid-state light emitter of Multi-chip light emitter emit BSY light, and wherein in a part of the reflection cells, the multi-chip light emitter are oriented so that the red light-emitting solid-state light emitter is disposed in a "down-right" position, and in another part of the reflection cells, the multi-chip light emitters are oriented so that the red light-emitting solid-state light emitter is arranged in a "top-left" position.

It is the object of the present invention to at least partially overcome the disadvantages of the prior art and in particular to allow a sufficiently smooth light distribution pattern even with larger neck openings. Yet another object is to provide a grid lamp that is less sensitive to manufacturing tolerances.

This object is achieved according to the features of the independent claims. Preferred embodiments are in particular the dependent claims.

The object is achieved by a grid lamp, comprising a plurality of reflector cells, each having a neck opening and a light exit opening, and having a plurality of semiconductor light sources in the region of the neck openings, each reflector cell is associated with exactly one semiconductor light source, wherein for at least two of the reflector cells lateral positions of these semiconductor light sources with respect to the respective neck openings, and wherein a quantity of the different lateral positions occurring in the reflector cells has a regular arrangement.

As a result, the Lichtabstrahlmuster the individual lighting units of reflector cell and associated semiconductor light source is selectively varied regularly regularly. This results in a well-defined, effectively smoothing superposition of the individual Lichtabstrahlmuster at least in the far field of the grid light. In addition, the louver lamp will also be less sensitive to manufacturing tolerances, since a production-related variation of the positions of the semiconductor light sources will usually be smaller than a systematic variation of these positions by the intended different lateral positioning and therefore has low impact.

That differ for at least two of the reflector cells lateral positions of these semiconductor light sources with respect to the respective neck openings, in particular, that includes one of these reflector cells associated (occupied) lateral positions of the (occupied) lateral positions of another of these reflector cells.

In particular, a "lateral position" may be a position in a plane perpendicular to an optical axis of the reflector cell or light unit. The lateral position may also be a position in a plane perpendicular to a longitudinal axis or axis of symmetry of the reflector cell. The lateral position may also be a position in a plane in or parallel to the neck opening. The lateral position may also be a position which results when viewing the light exit opening of the associated reflector cell. However, in particular, no height position is meant, in particular not expressed by a distance to the neck opening. For example, if a Cartesian coordinate system with the axis designations X, Y and Z assigned to a reflector cell, so that the Z-axis coincides with a longitudinal axis such as an axis of symmetry and / or an optical axis of this reflector cell, the term "lateral position" in particular to the X and Y coordinates of the semiconductor light source (or a geometric center thereof) and not to the Z coordinate.

It is a development that one of the lateral positions is a central or central position with respect to the neck opening. The central position corresponds to the special case of a lateral offset of size zero, in particular with respect to an axis of symmetry or an optical axis of the reflector cell.

A "quantity of the occurring lateral positions" can be understood in particular as the entirety of all lateral positions of semiconductor light sources occurring in the grid light, in particular irrespective of how large the number of occurring lateral positions is.

By "positioning" may be meant in particular a determination of one or more lateral positions.

The raster lamp may in particular be a flat luminaire. The reflector cells preferably have parallel optical axes.

It is a development that the reflector cells are arranged at least approximately in a regular first pattern. In this case, the reflector cells can in particular be arranged exactly in the regular first pattern. The different lateral positions of the semiconductor light sources can then be e.g. can be achieved by a corresponding deviation of the positions of the semiconductor light sources from the exact first pattern. Thus, the reflector cells can be produced particularly easily. Alternatively, the reflector cells may be arranged in the exact regular first pattern plus the lateral positions to be achieved and the semiconductor light sources may be arranged in the exact first pattern. This allows a particularly simple assembly of the semiconductor light sources. In particular, the first pattern may be a flat pattern. The first pattern may in particular be a rectangular matrix pattern, a circular pattern or ring pattern or a hexagonal pattern and / or in particular a close-packed pattern.

It is still a development that a lot of the occurring in the reflector cells different lateral positions is arranged in a regular second pattern. The second pattern may basically be the same as the first pattern. Thus, for example, the reflector cells may be arranged in a matrix-like, hexagonal or annular pattern and the amount of the different lateral positions occurring in the reflector cells form a similar matrix-like, hexagonal or annular pattern. For example, the reflector cells may be arranged in an mx n matrix pattern and the Semiconductor light sources may be arranged at corresponding lateral positions from a likewise formed as mx n matrix pattern set of positions.

It is also a development that a plurality of reflector cells are integrally associated with a component of the grid lamp or a component forms or has a plurality of reflector cells. Such a component is referred to below without restriction of the generality as a "reflector grid". A raster lamp may have at least two individual reflector cells and / or one or more reflector gratings.

Preferably, a grid lamp on nine or more reflector cells. Particularly preferred is an embodiment with a number of more than 50 reflector cells.

It is still a further development that several, in particular all, semiconductor light sources are arranged on a common substrate. The substrate may be e.g. to be a circuit board. This allows easy mounting of the semiconductor light sources.

In particular, a substrate may be assigned to a reflector grid, which has all semiconductor light sources assigned to this reflector grid (also referred to as "reflector module"). A raster lamp may be composed of one or more such reflector modules. Alternatively, such a substrate may be associated with a plurality of individual reflector cells and / or reflector gratings. Thus, a production and storage as well as an extension of a grid lamp is facilitated by additional reflector modules.

Each reflector cell is associated with exactly one semiconductor light source or is "occupied" by exactly one semiconductor light source.

Preferably, the semiconductor light source comprises a light emitting diode. A color of the light emitting diode may be monochrome (e.g., red, green, blue, etc.) or multichrome (e.g., white). Also, the light emitted by the light emitting diode may be an infrared light (IR LED) or an ultraviolet light (UV LED). The light emitting diode may include a wavelength converting phosphor (conversion LED). The phosphor may alternatively or additionally be arranged remotely from the light-emitting diode ("remote phosphor"). The light-emitting diode can be present in the form of a single light-emitting diode or in the form of an LED chip. Several LED chips can be mounted on a common substrate ("submount"). The light-emitting diode may be equipped with at least one own and / or common optics for beam guidance, e.g. at least one Fresnel lens, collimator, and so on. Instead of or in addition to inorganic light emitting diodes, e.g. based on InGaN or AlInGaP, organic LEDs (OLEDs, for example polymer OLEDs) can generally also be used. Alternatively, the semiconductor light source may be e.g. have a diode laser. The diode laser may also be followed by a wavelength-converting phosphor, e.g. in a LARP ("Laser Activated Remote Phosphor") arrangement.

The reflector cells may also be present or referred to as shell reflectors. The neck opening is typically smaller than the light exit opening. The reflector cells thus generally widen from the neck opening to the light exit opening. The light emitted by an associated semiconductor light source passes through the reflector cell partially directly and partially reflected and then exits at the light exit opening. An associated semiconductor light source may be outside the reflector cell and may emit light through the neck opening or be inserted into or through the neck opening in the reflector cell.

The reflector cells or their reflective surfaces are in particular identically shaped.

A shape of the reflective surface of the reflector cells is not limited and may be, for example, four-sided truncated pyramidal, conical, truncated pyramidal with pentagonal, hexagonal, etc. base area, etc. The shape of the reflective surface of the reflector cells may be flat or curved, for example parabolic, hyperbolic or free-space curved. The reflective surface may be faceted. The reflective surface may be diffuse or specularly reflective. The reflective surface may comprise wavelength-converting phosphor.

By the term "lateral position" is meant in particular the lateral position of a light source with respect to the respective associated reflector cell, in particular not the position with respect to the entire luminaire.

It is also an embodiment that the amount of occurring in the reflector cells lateral positions of the semiconductor light sources forms a section of a mathematical grid of rank 2.

It is still an embodiment that the set of lateral positions forms a section of a matrix pattern. A matrix pattern may, in particular, be understood as a section of a rectangular grid.

It is still an embodiment that the amount of occurring in the reflector cells lateral positions of the semiconductor light sources forms a rotationally symmetrical pattern. This allows even smoothing to multiple sides.

It is also an embodiment that the amount of lateral positions forms a ring pattern.

It is a development that the set of lateral positions forms points of an outer contour which correspond to the contour of the neck opening. Thus, a surface for positioning the lateral positions or the semiconductor light sources can be kept particularly large. For example, in a rectangular neck opening, the predetermined lateral positions may be in a matrix pattern or other rectangular pattern. For a hexagonal neck opening, for example, the predetermined lateral positions may be in a hexagonal pattern. For example, with a circular or oval neck opening, the predetermined lateral positions may be in a circular or oval pattern.

It is also an embodiment that the lateral positions of the set predetermined for the reflector cells occupy positions on a non-symmetrical figure, e.g. lying on a Fibonacci spiral.

The object is also achieved by a method for producing a grid lamp, wherein the method has at least the following steps: providing a plurality of reflector cells, each having a neck opening and a light exit opening; Arranging a plurality of semiconductor light sources in the region of associated neck openings of the reflector cells at a position which is lateral relative to the associated neck openings,
that a lot of the lateral positions form a regular arrangement.

The method solves the same tasks as the grid lamp and can be configured analogously.

For example, it is an embodiment that arranging the plurality of semiconductor light sources comprises selecting a lateral position of the respective semiconductor light source from a set of regularly arranged lateral positions for the reflector cells.

Fig.1

zeigt in einer Ansicht von schräg oben eine erfindungsgemäße Rasterleuchte gemäß einem ersten Ausführungsbeispiel mit mehreren Reflektorzellen;

Fig.2

zeigt als Schnittdarstellung in Seitenansicht eine Reflektorzelle mit zugeordneter Halbleiterlichtquelle;

Fig.3

zeigt in Draufsicht eine Reflektorzelle mit einer Menge möglicher Positionen der Halbleiterlichtquelle der Rasterleuchte gemäß dem ersten Ausführungsbeispiel;

Fig.4

zeigt in Draufsicht einen Ausschnitt aus der Rasterleuchte gemäß dem ersten Ausführungsbeispiel;

Fig.5

zeigt in Draufsicht einen Ausschnitt aus einer Rasterleuchte gemäß einem zweiten Ausführungsbeispiel;

Fig.6-8

zeigen in Draufsicht mehrere mögliche Mengen von seitlichen Positionen von Halbleiterlichtquellen, insbesondere für Reflektorzellen mit eckigen Halsöffnungen; und

Fig.9-12

zeigen in Draufsicht weitere mögliche Mengen von seitlichen Positionen von Halbleiterlichtquellen, insbesondere für Reflektorzellen mit runden Halsöffnungen.

The above-described characteristics, features, and advantages of this invention, as well as the manner in which they will be achieved, will become clearer and more clearly understood in connection with the following schematic description of exemplary embodiments which will be described in detail in conjunction with the drawings. In this case, the same or equivalent elements may be provided with the same reference numerals for clarity.

Fig.1

shows in a view obliquely from above a grid lamp according to the invention according to a first embodiment with a plurality of reflector cells;

Fig.2

shows a sectional side view of a reflector cell with associated semiconductor light source;

Figure 3

shows in plan view a reflector cell with a set of possible positions of the semiconductor light source of the raster lamp according to the first embodiment;

Figure 4

shows in plan view a section of the grid lamp according to the first embodiment;

Figure 5

shows a plan view of a section of a grid lamp according to a second embodiment;

Fig.6-8

show in plan view a plurality of possible sets of lateral positions of semiconductor light sources, in particular for reflector cells with angular neck openings; and

Fig.9-12

show in plan further possible amounts of lateral positions of semiconductor light sources, in particular for reflector cells with round neck openings.

Fig.1 shows in a view obliquely from above a grid lamp 11. The grid lamp 11 has 64 identically constructed reflector cells 12, which are arranged in a regular matrix-like 8 x 8 basic pattern in a common plane. The reflector cells 12 are aligned in a same direction and have parallel optical axes, which are perpendicular to the common plane (o. Fig.).

Specifically, the 64 reflector cells 12 are in the form of four separately manufactured, each one-piece reflector trellises 13, in a matrix-like 2x2 pattern. Each of the reflector gratings 13 has sixteen reflector cells 12 in a 4x4 pattern. A distance d1 between directly adjacent reflector cells 12 of a common reflector grating 13 is the same. This distance d1 is also slightly smaller than a distance d2 of over a boundary between two different reflector trenches 13 away directly adjacent reflector cells 12th

The reflector cells 12 have truncated pyramid-shaped reflecting surfaces 14, wherein a smaller opening than the neck opening 15 and a larger opening serves as a light exit opening 16, as well as in Fig.2 shown. Behind the neck openings 15 of each of the reflector cells 12 is in each case a semiconductor light source in the form of a light emitting diode 17, in particular in the form of a packaged LED or an LED chip. The reflector cells 12 are thus fully occupied by LEDs 17.

The LEDs 17 emit their light L in the respective neck opening 15 in the reflector cell 12, with its greatest intensity (main emission) along or, as shown, parallel to the optical axis O of the reflector cell 12. Depending on the angle of incidence or angle the main emission direction, the light L passes directly to the light exit opening 16 or is only mirrored at the respective reflective surface 14. The reflector cell 12 can also be regarded as a shell reflector.

The light-emitting diode 17 shown here is not arranged centrally to the neck opening 15, but is located on a laterally offset position. The lateral offset corresponds to a displacement perpendicular to the optical axis O. A lateral position P of the light-emitting diode 17 therefore corresponds in particular to a position on a plane E perpendicular to the optical axis O, in particular in a region of a mathematical projection of the neck opening 15 on this plane E. A position of the light emitting diode 17 along the optical axis O ("height position") may be independently selected therefrom.

As shown, the reflective surface 14 may be planar, alternatively or additionally curved in section. As in Figure 3 As shown, the LEDs 17 may occupy a position P of a set G1 of sixteen predetermined lateral positions P indicated as dots. The positions P are also arranged in a matrix-like pattern, in a 4 x 4 basic pattern. There are no central position with respect to the neck opening 15.

As in Fig.1 and more specifically in Figure 4 2, at least two of these light-emitting diodes 17 have a different lateral position P with respect to the associated neck openings 15. More specifically, all the reflector cells 12 associated with a common reflector grid 13 have their light emitting diodes 17 at different lateral positions P, as indicated by the dots. In particular, the positions P of the LEDs 17 correspond to the positions of the respective reflector cells 12 in the reflector grid 13.

In the grid lamp 11, therefore, the LEDs 17 are positioned differently with respect to a common reflector grid 13 in a regular manner. The light-emitting diodes 17 of different reflector gratings 13 can be positioned identically but need not be.

All light-emitting diodes 17 of the louvre luminaire 11 are arranged on a common substrate in the form of, for example, a 30 cm × 30 cm large board 18, as again with respect to FIG Fig.1 shown. The reflector gratings 13 can also be fastened to the circuit board 18.

Figure 5 shows a plan view of a section of a grid lamp 31 according to a second embodiment. In contrast to the grid lamp 11, the reflective surface 34 of the reflector cell 32 is formed as a hexagonal truncated pyramid. There is a smaller one hexagonal neck opening 35 and a larger hexagonal light exit opening 36.

The set G2 of the possible lateral positions P of the light emitting diodes 17 at a neck opening 35 is formed as a hexagonal, centered dot pattern and thus corresponds to the arrangement pattern of the reflector cells 32. The lateral positions P are also shown here as dots. In particular, the light-emitting diodes can be arranged at a lateral position P, which corresponds to a position of the associated reflector cell 32 in the set of reflector cells 32.

Figure 6 shows a further possible set G3 of lateral positions P for LEDs 17, in particular for a (dashed lines indicated) rectangular neck opening. The lateral positions P are now arranged in a matrix pattern (for example, a 4x4 matrix pattern) in which a distance of lateral positions between rows and columns is not constant.

Figure 7 shows a further possible set G4 of lateral positions P for LEDs 17, in particular for a (dashed lines indicated) hexagonal neck opening. The lateral positions P are now similar in a pattern to Figure 5 arranged, but now stretched along one direction (here: the horizontal direction).

Figure 8 shows yet another possible set G5 of lateral positions P for light-emitting diodes 17, in particular for a - indicated by dashed lines hexagonal neck opening. Here has been dispensed with a provision of the central position.

Fig.9 to Fig.12 show further possible quantities G6 to G9 of lateral positions P for LEDs 17, in particular for a (dashed lines indicated) round neck opening. The amount G6 in Figure 9 has an annular pattern at lateral positions P, wherein also a position P at a central location is provided. The amount G7 in Figure 10 shows a pattern analogous to the set G6, but without the central position.

The amount G8 in Figure 11 shows a pattern analogous to the set G6, but with an inner subset of, here: three, annularly arranged positions P instead of the central position. The amount G9 in Figure 12 shows a pattern analogous to set G8, but with an inner subset of six annular positions P.

The arrangement patterns of all amounts G1 to G9 shown make it possible to selectively vary a light emission pattern of the individual luminous units of reflector cell (eg 12 or 32) and associated light-emitting diode 17 so that at least in the far field of the grid lamp (eg 11 or 31) a smoothing Overlaying the individual Lichtabstrahlmuster results. In addition, the louvre lamp is less sensitive to manufacturing tolerances.

Although the invention has been further illustrated and described in detail by the illustrated embodiments, the invention is not so limited and other variations can be derived therefrom by those skilled in the art without departing from the scope of the invention.

Thus, the halftone cells may be arranged in a different pattern to the lateral positions of the semiconductor light sources. The deviation may relate to the number and / or shape of the positions of the pattern. For example, like the reflector cells analogous to Figure 4 or Figure 5 be arranged in a rectangular matrix pattern or a dense hexagon pattern, the reflector cells but have a cone-shaped reflective surface with a round neck opening and light exit opening. Then, the arrangement pattern of the lateral positions may, for example, have a round or annular basic shape.

Also, a plurality of the LEDs may be arranged at the same lateral positions of a crowd. In addition, one or more lateral positions of a crowd may not be populated with LEDs.

Generally, "on", "an", etc. may be taken to mean a singular or a plurality, in particular in the sense of "at least one" or "one or more" etc., unless this is explicitly excluded, e.g. by the expression "exactly one", etc.

Also, a number may include exactly the specified number as well as a usual tolerance range, as long as this is not explicitly excluded.

With a given arrangement of the reflector cells, the positioning of the semiconductor light sources can be achieved by placing the semiconductor light sources on the board at suitable locations which take into account the different lateral positions. Then, in particular, an arrangement of the reflector cells may correspond to a regular pattern. Alternatively, with a given arrangement of the semiconductor light sources on the board, the positioning can be achieved by arranging the reflector cells at suitable locations. Thus, for example, in the first embodiment gem. Fig.1 all light-emitting diodes 17 may be arranged in a regular square grid, while the reflector cells 12 are offset in accordance with the desired lateral positions. This may be easier to manufacture.

reference numeral

11

Louvrelight

12

reflector cell

13

reflector grid

14

reflective surface

15

neck opening

16

Light opening

17

led

18

circuit board

31

Louvrelight

32

reflector cell

34

reflective surface

35

neck opening

36

Light opening

d1

distance

d2

distance

e

level

G1-G9

amount

L

light

O

optical axis

P

position

Claims (9)

1. Louvre luminaire (11; 31),

   - comprising a plurality of reflector cells (12; 32), which each have a neck opening (15; 35) and a light-exit opening (16; 36), and

   - comprising a plurality of semiconductor light sources (17) in the region of the respectively associated neck opening (15; 35), wherein exactly one semiconductor light source (17) is assigned to each reflector cell (12; 32);

   - wherein the lateral positions (P) of the associated semiconductor light sources (17) in relation to the associated neck openings (15; 35) differ for at least two of the reflector cells (12; 32)

   - and wherein a set (G1-G9) of the different lateral positions (P) occurring in the reflector cells (12; 32) has a regular arrangement.
2. Louvre luminaire (11; 31) according to Claim 1, wherein the set (G1-G9) of the lateral positions (P) forms a section of mathematical lattice of rank 2.
3. Louvre luminaire (11; 31) according to one of the preceding claims, wherein the set (G1-G4) of the lateral positions (P) forms a matrix pattern.
4. Louvre luminaire according to Claim 1, wherein the set (G6-G9) of the lateral positions (P) forms a ring pattern.
5. Louvre luminaire according to Claim 1, wherein the set of lateral positions (P) lies on a Fibonacci spiral.
6. Louvre luminaire (11; 31) according to one of the preceding claims, wherein the set (G1-G9) of lateral positions (P) forms a rotationally symmetric pattern.
7. Louvre luminaire (11; 31) according to one of the preceding claims, wherein predetermined lateral positions (P) of a set (G1-G9) form a pattern which corresponds to a first pattern of the reflector cells (12; 32).
8. Louvre luminaire according to one of the preceding claims, wherein the set (G1-G9) of the lateral positions (P) occurring in the reflector cells (12; 32) comprises at least nine different lateral positions (P) and wherein lateral positions (P) of the semiconductor light sources (17) differ in relation to the respective neck openings (15; 35) for at least nine of the reflector cells (12; 32).
9. Method for producing a louvre luminaire (11; 31), wherein the method comprises at least the following steps:

   - providing a plurality of reflector cells (12; 32), which each have a neck opening (15; 35) and a light exit opening (16; 36);

   - arranging a plurality of semiconductor light sources (17) in the region of associated neck openings (15; 35) of the reflector cells (12; 32) at lateral positions (P) in relation to the associated neck openings (15; 35) in such a way

   - that a set (G1-G9) of the lateral positions (P) forms a regular arrangement,

   - wherein the lateral positions (P) of the associated semiconductor light sources (17) in relation to the associated neck openings (15; 35) differ for at least two of the reflector cells (12; 32), and wherein exactly one semiconductor light source (17) is assigned to each reflector cell (12; 32).

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