EP2950525A1 - Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor - Google Patents

Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor Download PDF

Info

Publication number
EP2950525A1
EP2950525A1 EP14173903.7A EP14173903A EP2950525A1 EP 2950525 A1 EP2950525 A1 EP 2950525A1 EP 14173903 A EP14173903 A EP 14173903A EP 2950525 A1 EP2950525 A1 EP 2950525A1
Authority
EP
European Patent Office
Prior art keywords
image sensor
pixels
heater
semiconductor image
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP14173903.7A
Other languages
German (de)
French (fr)
Other versions
EP2950525B1 (en
EP2950525A3 (en
Inventor
Thomas Stockmeier
Richard Forsyth
Thomas Troxler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram AG
Original Assignee
Ams AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams AG filed Critical Ams AG
Priority to EP14173903.7A priority Critical patent/EP2950525B1/en
Priority to US15/313,088 priority patent/US10154215B2/en
Priority to PCT/EP2015/061306 priority patent/WO2015181051A1/en
Priority to JP2016569737A priority patent/JP6302094B2/en
Publication of EP2950525A1 publication Critical patent/EP2950525A1/en
Publication of EP2950525A3 publication Critical patent/EP2950525A3/en
Priority to US16/171,845 priority patent/US10819930B2/en
Application granted granted Critical
Publication of EP2950525B1 publication Critical patent/EP2950525B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Definitions

  • Pictures produced by a semiconductor image sensor may show slight non-uniformities from pixel to pixel, which can be caused by local temperature differences in the sensor chip, because leakage current and responsivity of a photodiode depend on the temperature.
  • image sensor chips are preferably operated at a constant, spatially homogeneous temperature. Usual methods of maintaining a spatially and temporally constant temperature, especially by heating or cooling the whole image sensor chip, may not be appropriate to obtain optimal temperature conditions, especially if photo sensors are integrated in the vicinity of components generating heat.
  • US 7,480,006 B1 discloses an integrated circuit package including a substrate with a surface disposed to receive an image sensor chip and with a heater element positioned underneath a sensor area of the image sensor chip.
  • US 6,046,433 A discloses an integrated circuit die containing a metal heater resistor, which is disposed around the periphery of the die and provided with electrical terminals.
  • US 4,808,009 A discloses an integrated sensing device including a resistance temperature sensor formed in a semiconductor substrate, and a resistance heater, which is formed on an insulating layer covering the substrate surface. It is an object of the present invention to disclose a semiconductor image sensor that shows less non-uniformity in the pictures produced than conventional image sensors. It is a further object to disclose a method for obtaining improved pictures produced by a semiconductor image sensor.
  • the semiconductor image sensor comprises a plurality of pixels, which are each provided with a photo sensor, and at least one heater, which is integrated with the photo sensors and is arranged in at least one of the pixels or in the vicinity of at least one of the pixels. At least one integrated readout circuit may also be integrated. An appropriate operation of the heater will increase the temperature of the photo sensor of the relevant pixel. The temperatures of the other photo sensors may be increased by a smaller degree or not affected by the heating.
  • the heater is arranged in the relevant pixel between the photo sensor of this pixel and the integrated readout circuit.
  • each further one of the pixels is provided with a further integrated readout circuit and with a further heater arranged between the further integrated readout circuit and the photo sensor of the respective further one of the pixels.
  • the heater extends in at least one further pixel or in the vicinity of at least one further pixel.
  • At least a further one of the pixels is provided with a further heater, which is arranged in the further one of the pixels or in the vicinity of the further one of the pixels.
  • the heater is formed by a plurality of individual heaters, which are arranged in the at least one of the pixels or in the vicinity of the at least one of the pixels.
  • the individual heaters surround the photo sensor of the at least one of the pixels.
  • a further embodiment comprises an integrated temperature sensor, which may especially be arranged in the vicinity of one of the photo sensors.
  • a further embodiment comprises further integrated temperature sensors, and the integrated temperature sensor and each of the further integrated temperature sensors are arranged in the vicinity of a respective one of the photo sensors.
  • a further embodiment comprises through-substrate vias electrically connected with the photo sensors and/or through-substrate vias electrically connected with the at least one heater.
  • the at least one of the pixels is heated with the heater, so that the temperature of this pixel is increased by a larger degree than the temperature of at least a further one of the pixels.
  • Some or all of the further pixels may essentially not be affected by the heating process.
  • heating the pixel aims at a local compensation of a temperature difference that is due to an operation of the integrated readout circuit and/or further integrated readout circuits.
  • the temperature is locally controlled by at least one integrated temperature sensor.
  • Figure 1 shows a pixel 1 of the semiconductor image sensor.
  • the pixel 1 comprises a photo sensor 2, which is integrated in a semiconductor body or substrate.
  • the details of the photo sensor 2, which may especially be a photodiode or a cluster of photodiodes, for instance, are not essential and are therefore not shown in Figure 1 .
  • a readout circuit 3 may optionally be integrated in the semiconductor body or substrate together with the photo sensor 2.
  • the readout circuit 3 may be a CMOS circuit, for instance.
  • Each pixel 1 may be provided with an individual readout circuit 3. Instead, a readout circuit 3 may be provided for some or all of the photo sensors 2 in common.
  • the photo sensor 2 and the readout circuit 3 are integrated within the pixel 1 on the same side of the semiconductor body or substrate, but the arrangement of the photo sensor 2 and the readout circuit 3 can differ from this example.
  • a heater 4 is integrated in the pixel 1 or in the vicinity of the pixel 1.
  • the heater 4 may especially be a resistive heater and is preferably provided with electric connections 5 for an application of a voltage or electric current. Resistive heaters are known per se in semiconductor technology.
  • the heater 4 is arranged between the photo sensor 2 and the readout circuit 3.
  • An arrangement of the heater 4 in the vicinity of the readout circuit 3, like the arrangement shown in Figure 1 may be especially suitable, because such an arrangement allows to substitute or supplement the generation of heat by the readout circuit 3 with a similar generation of heat by the heater 4, especially during a mode of operation of the image sensor in which the readout circuit 3 does not generate the maximal or usual amount of heat. Thus a homogeneous temperature distribution can be maintained during every mode of operation of the image sensor.
  • the heater 4 can be integrated in the image sensor by placing a resistor or a set of resistors close to the photo sensor 2.
  • the resistor or set of resistors can particularly be formed by a layer of electrically resistive material in a way that is known per se in semiconductor technology.
  • Several individual heating elements formed by resistors may be connected in parallel or in series to form the heater 4.
  • a voltage or electric current is applied to the electric connections 5 in order to generate heat in the resistor or set of resistors.
  • the voltage or current supply can be provided directly on the image sensor chip or externally via electric terminals of the image sensor chip.
  • the heaters 4 of copies of the image sensor may be connected to one another via interconnections between the chips.
  • Figure 2 shows a pixel 1 of a further embodiment of the semiconductor image sensor. Elements of the embodiment according to Figure 2 that correspond to elements of the embodiment according to Figure 1 are designated with the same reference numerals.
  • the heater 4 comprises several individual heaters 4', which may be provided with separate electric connections 5.
  • the individual heaters 4' may especially surround the photo sensor 2, as shown in Figure 2 by way of an example, but the arrangement of the photo sensor 2 and the individual heaters 4' can differ from this example.
  • Figure 3 shows a pixel 1 of a further embodiment of the semiconductor image sensor. Elements of the embodiment according to Figure 3 that correspond to elements of the embodiments according to Figures 1 and 2 are designated with the same reference numerals.
  • the embodiment according to Figure 3 comprises through-substrate vias 6, 7 for an electric connection of the photo sensor 2 and the heater 4. This arrangement is especially suitable if the readout circuit 3 is arranged on the side of the semiconductor body or substrate that is opposite the photo sensor 2.
  • the heater 4 may also be arranged on the opposite side, especially in a location under the photo sensor 2, and in this case it may be sufficient to provide only the photo sensor 2 with through-substrate vias 6 for electric connection.
  • Figure 4 shows an array of three neighbouring pixels 1 of a further embodiment of the semiconductor image sensor. Elements of the embodiment according to Figure 4 that correspond to elements of the embodiment according to Figure 1 are designated with the same reference numerals.
  • the embodiment according to Figure 4 comprises a heater 4 arranged close to several pixels 1 in common. In the example shown in Figure 4 , the heater 4 is arranged between the photo sensors 2 and the readout circuits 3 of these pixels 1.
  • the heater 4 may be arranged in the vicinity of any number of pixels 1 in common, and the arrangement may differ from the example shown in Figure 4 .
  • FIG. 5 shows a pixel 1 of a further embodiment of the semiconductor image sensor. Elements of the embodiment according to Figure 5 that correspond to elements of the embodiment according to Figure 1 are designated with the same reference numerals.
  • the embodiment according to Figure 5 further comprises a temperature sensor 8, which is preferably arranged close to the photo sensor 2.
  • the temperature sensor 8 serves to detect the temperature of the photo sensor 2, so that the heater 4 can be operated under control of the temperature sensor 8 in order to avoid deviations of the desired temperature.
  • the temperature sensor 8 may be used for a group of pixels 1 in common. Instead, each pixel 1 may be provided with an individual temperature sensor 8.
  • the evaluation of the measurement of the temperature and the control of the corresponding operation of the heater 4 may be implemented in the readout circuit 3, for instance.
  • the effort for the assembly and/or housing of the image sensor chip are substantially reduced.
  • the integrated heater 4 or heaters 4 allow to heat different areas of the image sensor chip, in particular different pixels 1 or groups of pixels 1, independently of one another and thus to maintain a temperature distribution of the image sensor chip that is spatially and temporally essentially constant. The image production is thereby improved and non-uniformities can be avoided or at least substantially reduced.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The semiconductor image sensor comprises a plurality of pixels (1) with photo sensors (2). At least one heater (4) is integrated with the photo sensors and is arranged in at least one of the pixels or in the vicinity of at least one of the pixels. An appropriate operation of the heater will increase the temperature of the relevant pixel. Thus it is possible to achieve a local compensation of a temperature difference that may be due to the operation of an integrated readout circuit (3) or any other integrated component generating heat.

Description

  • Pictures produced by a semiconductor image sensor may show slight non-uniformities from pixel to pixel, which can be caused by local temperature differences in the sensor chip, because leakage current and responsivity of a photodiode depend on the temperature. To avoid this problem, image sensor chips are preferably operated at a constant, spatially homogeneous temperature. Usual methods of maintaining a spatially and temporally constant temperature, especially by heating or cooling the whole image sensor chip, may not be appropriate to obtain optimal temperature conditions, especially if photo sensors are integrated in the vicinity of components generating heat.
  • US 7,480,006 B1 discloses an integrated circuit package including a substrate with a surface disposed to receive an image sensor chip and with a heater element positioned underneath a sensor area of the image sensor chip.
  • US 6,046,433 A discloses an integrated circuit die containing a metal heater resistor, which is disposed around the periphery of the die and provided with electrical terminals.
  • US 4,808,009 A discloses an integrated sensing device including a resistance temperature sensor formed in a semiconductor substrate, and a resistance heater, which is formed on an insulating layer covering the substrate surface. It is an object of the present invention to disclose a semiconductor image sensor that shows less non-uniformity in the pictures produced than conventional image sensors. It is a further object to disclose a method for obtaining improved pictures produced by a semiconductor image sensor.
  • These objects are achieved with the semiconductor image sensor according to claim 1 and with the method according to claim 13. Embodiments and variants derive from the dependent claims.
  • The semiconductor image sensor comprises a plurality of pixels, which are each provided with a photo sensor, and at least one heater, which is integrated with the photo sensors and is arranged in at least one of the pixels or in the vicinity of at least one of the pixels. At least one integrated readout circuit may also be integrated. An appropriate operation of the heater will increase the temperature of the photo sensor of the relevant pixel. The temperatures of the other photo sensors may be increased by a smaller degree or not affected by the heating.
  • In an embodiment of the semiconductor image sensor comprising at least one integrated readout circuit, the heater is arranged in the relevant pixel between the photo sensor of this pixel and the integrated readout circuit.
  • In a further embodiment, each further one of the pixels is provided with a further integrated readout circuit and with a further heater arranged between the further integrated readout circuit and the photo sensor of the respective further one of the pixels.
  • In a further embodiment, the heater extends in at least one further pixel or in the vicinity of at least one further pixel.
  • In a further embodiment, at least a further one of the pixels is provided with a further heater, which is arranged in the further one of the pixels or in the vicinity of the further one of the pixels.
  • In a further embodiment, the heater is formed by a plurality of individual heaters, which are arranged in the at least one of the pixels or in the vicinity of the at least one of the pixels.
  • In a further embodiment, the individual heaters surround the photo sensor of the at least one of the pixels.
  • A further embodiment comprises an integrated temperature sensor, which may especially be arranged in the vicinity of one of the photo sensors.
  • A further embodiment comprises further integrated temperature sensors, and the integrated temperature sensor and each of the further integrated temperature sensors are arranged in the vicinity of a respective one of the photo sensors.
  • A further embodiment comprises through-substrate vias electrically connected with the photo sensors and/or through-substrate vias electrically connected with the at least one heater.
  • In the method of operating such a semiconductor image sensor, the at least one of the pixels is heated with the heater, so that the temperature of this pixel is increased by a larger degree than the temperature of at least a further one of the pixels. Some or all of the further pixels may essentially not be affected by the heating process. In particular, heating the pixel aims at a local compensation of a temperature difference that is due to an operation of the integrated readout circuit and/or further integrated readout circuits.
  • In a variant of the method, the temperature is locally controlled by at least one integrated temperature sensor.
  • The following is a detailed description of examples of the image sensor and the method of operating such an image sensor in conjunction with the appended figures.
    • Figure 1
    schematically shows the arrangement of the photo sensor, heater and readout circuit in a pixel of an embodiment of the image sensor.
    Figure 2
    shows an arrangement according to Figure 1 for a further embodiment comprising a plurality of individual heaters surrounding the photo sensor.
    Figure 3
    shows an arrangement according to Figure 1 for a further embodiment with through-substrate vias.
    Figure 4
    shows a group of pixels of a further embodiment with a heater arranged close to this group of pixels.
    Figure 5
    shows an arrangement according to Figure 1 for a further embodiment comprising a temperature sensor.
  • Figure 1 shows a pixel 1 of the semiconductor image sensor. The pixel 1 comprises a photo sensor 2, which is integrated in a semiconductor body or substrate. The details of the photo sensor 2, which may especially be a photodiode or a cluster of photodiodes, for instance, are not essential and are therefore not shown in Figure 1. A readout circuit 3 may optionally be integrated in the semiconductor body or substrate together with the photo sensor 2. The readout circuit 3 may be a CMOS circuit, for instance. Each pixel 1 may be provided with an individual readout circuit 3. Instead, a readout circuit 3 may be provided for some or all of the photo sensors 2 in common. In the embodiment according to Figure 1, the photo sensor 2 and the readout circuit 3 are integrated within the pixel 1 on the same side of the semiconductor body or substrate, but the arrangement of the photo sensor 2 and the readout circuit 3 can differ from this example.
  • A heater 4 is integrated in the pixel 1 or in the vicinity of the pixel 1. The heater 4 may especially be a resistive heater and is preferably provided with electric connections 5 for an application of a voltage or electric current. Resistive heaters are known per se in semiconductor technology. In the embodiment according to Figure 1, the heater 4 is arranged between the photo sensor 2 and the readout circuit 3. An arrangement of the heater 4 in the vicinity of the readout circuit 3, like the arrangement shown in Figure 1, may be especially suitable, because such an arrangement allows to substitute or supplement the generation of heat by the readout circuit 3 with a similar generation of heat by the heater 4, especially during a mode of operation of the image sensor in which the readout circuit 3 does not generate the maximal or usual amount of heat. Thus a homogeneous temperature distribution can be maintained during every mode of operation of the image sensor.
  • The heater 4 can be integrated in the image sensor by placing a resistor or a set of resistors close to the photo sensor 2. The resistor or set of resistors can particularly be formed by a layer of electrically resistive material in a way that is known per se in semiconductor technology. Several individual heating elements formed by resistors may be connected in parallel or in series to form the heater 4. A voltage or electric current is applied to the electric connections 5 in order to generate heat in the resistor or set of resistors. The voltage or current supply can be provided directly on the image sensor chip or externally via electric terminals of the image sensor chip. The heaters 4 of copies of the image sensor may be connected to one another via interconnections between the chips.
  • Figure 2 shows a pixel 1 of a further embodiment of the semiconductor image sensor. Elements of the embodiment according to Figure 2 that correspond to elements of the embodiment according to Figure 1 are designated with the same reference numerals. In the embodiment according to Figure 2, the heater 4 comprises several individual heaters 4', which may be provided with separate electric connections 5. The individual heaters 4' may especially surround the photo sensor 2, as shown in Figure 2 by way of an example, but the arrangement of the photo sensor 2 and the individual heaters 4' can differ from this example.
  • Figure 3 shows a pixel 1 of a further embodiment of the semiconductor image sensor. Elements of the embodiment according to Figure 3 that correspond to elements of the embodiments according to Figures 1 and 2 are designated with the same reference numerals. The embodiment according to Figure 3 comprises through- substrate vias 6, 7 for an electric connection of the photo sensor 2 and the heater 4. This arrangement is especially suitable if the readout circuit 3 is arranged on the side of the semiconductor body or substrate that is opposite the photo sensor 2. The heater 4 may also be arranged on the opposite side, especially in a location under the photo sensor 2, and in this case it may be sufficient to provide only the photo sensor 2 with through-substrate vias 6 for electric connection.
  • Figure 4 shows an array of three neighbouring pixels 1 of a further embodiment of the semiconductor image sensor. Elements of the embodiment according to Figure 4 that correspond to elements of the embodiment according to Figure 1 are designated with the same reference numerals. The embodiment according to Figure 4 comprises a heater 4 arranged close to several pixels 1 in common. In the example shown in Figure 4, the heater 4 is arranged between the photo sensors 2 and the readout circuits 3 of these pixels 1. The heater 4 may be arranged in the vicinity of any number of pixels 1 in common, and the arrangement may differ from the example shown in Figure 4.
  • Figure 5 shows a pixel 1 of a further embodiment of the semiconductor image sensor. Elements of the embodiment according to Figure 5 that correspond to elements of the embodiment according to Figure 1 are designated with the same reference numerals. The embodiment according to Figure 5 further comprises a temperature sensor 8, which is preferably arranged close to the photo sensor 2. The temperature sensor 8 serves to detect the temperature of the photo sensor 2, so that the heater 4 can be operated under control of the temperature sensor 8 in order to avoid deviations of the desired temperature. Similarly to the use of the heater 4 for several pixels 1 in common, according to Figure 4, the temperature sensor 8 may be used for a group of pixels 1 in common. Instead, each pixel 1 may be provided with an individual temperature sensor 8. The evaluation of the measurement of the temperature and the control of the corresponding operation of the heater 4 may be implemented in the readout circuit 3, for instance.
  • By integrating the heater 4 or an array of heaters 4 each provided for one pixel 1 or for a small group of pixels 1 into the image sensor chip, the effort for the assembly and/or housing of the image sensor chip are substantially reduced. The integrated heater 4 or heaters 4 allow to heat different areas of the image sensor chip, in particular different pixels 1 or groups of pixels 1, independently of one another and thus to maintain a temperature distribution of the image sensor chip that is spatially and temporally essentially constant. The image production is thereby improved and non-uniformities can be avoided or at least substantially reduced.
    • List of reference numerals
    • 1
    pixel
    2
    photo sensor
    3
    readout circuit
    4
    heater
    4'
    individual heater
    5
    electric connection
    6
    through-substrate via
    7
    through-substrate via
    8
    temperature sensor

Claims (15)

  1. A semiconductor image sensor, comprising:
    - a plurality of pixels (1), each pixel (1) being provided with a photo sensor (2) having a temperature, and
    - at least one heater (4),
    characterized in that
    - the heater (4) is integrated with the photo sensors (2), and
    - the heater (4) is arranged in at least one of the pixels (1) or in the vicinity of at least one of the pixels (1), so that an operation of the heater (4) increases the temperature of the photo sensor (2) of said pixel (1).
  2. The semiconductor image sensor of claim 1, further comprising:
    at least one integrated readout circuit (3), wherein the heater (4) is arranged in the at least one of the pixels (1) between the photo sensor (2) of this pixel (1) and the at least one integrated readout circuit (3).
  3. The semiconductor image sensor of claim 2, further comprising:
    each further one of the pixels (1) being provided with a further integrated readout circuit (3) and with a further heater (4) arranged between the further integrated readout circuit (3) and the photo sensor (2) of the respective further one of the pixels (1).
  4. The semiconductor image sensor of claim 1 or 2, wherein the heater (4) extends in at least one further pixel (1) or in the vicinity of at least one further pixel (1).
  5. The semiconductor image sensor of claim 1 or 2, wherein at least a further one of the pixels (1) is provided with a further heater (4), which is arranged in the further one of the pixels (1) or in the vicinity of the further one of the pixels (1).
  6. The semiconductor image sensor of claim 1, wherein
    the heater (4) is formed by a plurality of individual heaters (4'), which are arranged in the at least one of the pixels (1) or in the vicinity of the at least one of the pixels (1).
  7. The semiconductor image sensor of claim 6, wherein
    the individual heaters (4') surround the photo sensor (2) of the at least one of the pixels (1).
  8. The semiconductor image sensor of one of claims 1 to 7, further comprising:
    an integrated temperature sensor (8).
  9. The semiconductor image sensor of claim 8, wherein
    the integrated temperature sensor (8) is arranged in the vicinity of one of the photo sensors (2).
  10. The semiconductor image sensor of claim 8, further comprising:
    further integrated temperature sensors (8), the integrated temperature sensor (8) and each of further integrated temperature sensors (8) being arranged in the vicinity of a respective one of the photo sensors (2).
  11. The semiconductor image sensor of one of claims 1 to 10, further comprising:
    through-substrate vias (6) electrically connected with the photo sensors (2).
  12. The semiconductor image sensor of one of claims 1 to 11, further comprising:
    through-substrate vias (7) electrically connected with the at least one heater (4).
  13. A method of operating a semiconductor image sensor according to one of claims 1 to 12, comprising:
    heating the at least one of the pixels (1) by using the at least one heater (4), and
    thus increasing the temperature of this pixel (1) by a larger degree than the temperature of at least a further one of the pixels (1).
  14. The method of claim 13, wherein
    heating the at least one of the pixels (1) aims at a local compensation of a temperature difference that is due to an operation of at least one integrated readout circuit (3) and/or further integrated readout circuits (3).
  15. The method of claim 13 or 14, further comprising:
    controlling the temperature locally by at least one integrated temperature sensor (8).
EP14173903.7A 2014-05-28 2014-06-25 Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor Active EP2950525B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP14173903.7A EP2950525B1 (en) 2014-05-28 2014-06-25 Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor
US15/313,088 US10154215B2 (en) 2014-05-28 2015-05-21 Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor
PCT/EP2015/061306 WO2015181051A1 (en) 2014-05-28 2015-05-21 Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor
JP2016569737A JP6302094B2 (en) 2014-05-28 2015-05-21 Semiconductor image sensor with integrated pixel heating mechanism and method of operating a semiconductor image sensor
US16/171,845 US10819930B2 (en) 2014-05-28 2018-10-26 Method of operating a semiconductor image sensor with integrated pixel heating

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14170387 2014-05-28
EP14173903.7A EP2950525B1 (en) 2014-05-28 2014-06-25 Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor

Publications (3)

Publication Number Publication Date
EP2950525A1 true EP2950525A1 (en) 2015-12-02
EP2950525A3 EP2950525A3 (en) 2016-01-13
EP2950525B1 EP2950525B1 (en) 2020-08-12

Family

ID=50841629

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14173903.7A Active EP2950525B1 (en) 2014-05-28 2014-06-25 Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor

Country Status (4)

Country Link
US (2) US10154215B2 (en)
EP (1) EP2950525B1 (en)
JP (1) JP6302094B2 (en)
WO (1) WO2015181051A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112601000A (en) * 2020-12-07 2021-04-02 南昌黑鲨科技有限公司 Noise reduction system, method and computer readable storage medium for camera

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102605618B1 (en) * 2016-11-14 2023-11-23 삼성전자주식회사 Image sensor package
KR102380823B1 (en) * 2017-08-16 2022-04-01 삼성전자주식회사 Chip structure including heating element
KR102058865B1 (en) 2018-04-12 2019-12-24 (주)아이엠 Heating device using hyper heat accelerator and method for manufacturing the same
US11243550B2 (en) 2020-05-29 2022-02-08 Juniper Networks, Inc. Optical-electrical device using hybrid automated testing equipment

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808009A (en) 1986-06-05 1989-02-28 Rosemount, Inc. Integrated semiconductor resistance temperature sensor and resistive heater
US6046433A (en) 1998-09-11 2000-04-04 Linear Technology Corporation Monolithic integrated circuit die heater and methods for using same
US6133572A (en) * 1998-06-05 2000-10-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Infrared detector system with controlled thermal conductance
WO2008036289A1 (en) * 2006-09-21 2008-03-27 Micron Technology, Inc. An image sensor device having one or more modified dummy pixels that are usable as non-volatile memory elements
US7480006B1 (en) 2004-04-13 2009-01-20 Pixim, Inc. Optical package for image sensor with integrated heater
US20090140149A1 (en) * 2004-12-21 2009-06-04 Ulis Component for detecting especially infrared electromagnetic radiation
US20110180710A1 (en) * 2010-01-26 2011-07-28 Northrop Grumman Systems Corporation Series diode electro-thermal circuit for ultra sensitive silicon sensor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060055800A1 (en) * 2002-12-18 2006-03-16 Noble Device Technologies Corp. Adaptive solid state image sensor
JP3808092B2 (en) * 2003-08-08 2006-08-09 松下電器産業株式会社 Electronic device and manufacturing method thereof
US8487260B2 (en) * 2005-01-26 2013-07-16 Analog Devices, Inc. Sensor
DE102005026242B4 (en) 2005-06-07 2007-05-03 Austriamicrosystems Ag Photodiode with semiconductor integrated circuit and method of manufacture
JP2013041921A (en) * 2011-08-12 2013-02-28 Panasonic Corp Vacuum sealing device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808009A (en) 1986-06-05 1989-02-28 Rosemount, Inc. Integrated semiconductor resistance temperature sensor and resistive heater
US6133572A (en) * 1998-06-05 2000-10-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Infrared detector system with controlled thermal conductance
US6046433A (en) 1998-09-11 2000-04-04 Linear Technology Corporation Monolithic integrated circuit die heater and methods for using same
US7480006B1 (en) 2004-04-13 2009-01-20 Pixim, Inc. Optical package for image sensor with integrated heater
US20090140149A1 (en) * 2004-12-21 2009-06-04 Ulis Component for detecting especially infrared electromagnetic radiation
WO2008036289A1 (en) * 2006-09-21 2008-03-27 Micron Technology, Inc. An image sensor device having one or more modified dummy pixels that are usable as non-volatile memory elements
US20110180710A1 (en) * 2010-01-26 2011-07-28 Northrop Grumman Systems Corporation Series diode electro-thermal circuit for ultra sensitive silicon sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112601000A (en) * 2020-12-07 2021-04-02 南昌黑鲨科技有限公司 Noise reduction system, method and computer readable storage medium for camera

Also Published As

Publication number Publication date
EP2950525B1 (en) 2020-08-12
US10819930B2 (en) 2020-10-27
US10154215B2 (en) 2018-12-11
EP2950525A3 (en) 2016-01-13
US20190068907A1 (en) 2019-02-28
WO2015181051A1 (en) 2015-12-03
JP6302094B2 (en) 2018-03-28
US20170150081A1 (en) 2017-05-25
JP2017517893A (en) 2017-06-29

Similar Documents

Publication Publication Date Title
US10819930B2 (en) Method of operating a semiconductor image sensor with integrated pixel heating
CN107078082B (en) Thermal dynamic response sensing system for heaters
US10820390B2 (en) Method of operating an optoelectronic component and optoelectronic component
US10163668B2 (en) Thermal dynamic response sensing systems for heaters
US6880345B1 (en) Cooling system for an electronic component
JP2018502443A5 (en)
US9538583B2 (en) Substrate support with switchable multizone heater
US20060065654A1 (en) Modular layered heater system
CN108700471A (en) Thermal image sensor
CN1988153A (en) Integrated circuit and method for controlling the temperature of a semiconductor material having an integrated circuit
CN107092117A (en) Display panel and the method for improving display panel display quality
US9607906B2 (en) Integrated circuit chip with corrected temperature drift
TW201926539A (en) Multi-zone pedestal heater without vias
WO2015011159A1 (en) Electronic control of oleds with distributed electrodes
CN107257923B (en) Humidity sensor with thermal module
JP2010091443A (en) Semiconductor device for measuring temperature, and system and method for measuring temperature of semiconductor device
CN102906563A (en) Method for manufacturing semiconductor device
JP2020022407A (en) Measurement device and measurement system
US7480006B1 (en) Optical package for image sensor with integrated heater
US9064824B2 (en) In-situ annealing for extending the lifetime of CMOS products
JP3626161B2 (en) Device for measuring operating characteristics of electronic elements
JP5540406B2 (en) Infrared sensor device
JP6249682B2 (en) Liquid discharge head substrate, liquid discharge head, and recording apparatus.
JP6102585B2 (en) Infrared image sensor
CN103913241B (en) Non-brake method reads structure of controlling temperature and the method for Infrared FPA detector without substrate light

Legal Events

Date Code Title Description
AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

PUAB Information related to the publication of an a document modified or deleted

Free format text: ORIGINAL CODE: 0009199EPPU

PUAF Information related to the publication of a search report (a3 document) modified or deleted

Free format text: ORIGINAL CODE: 0009199SEPU

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

D17D Deferred search report published (deleted)
AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIC1 Information provided on ipc code assigned before grant

Ipc: H04N 5/365 20110101ALI20151209BHEP

Ipc: H04N 5/3745 20110101AFI20151209BHEP

17P Request for examination filed

Effective date: 20160330

RBV Designated contracting states (corrected)

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: AMS AG

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20190801

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20200416

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

RIN1 Information on inventor provided before grant (corrected)

Inventor name: STOCKMEIER, THOMAS

Inventor name: TROXLER, THOMAS

Inventor name: FORSYTH, RICHARD

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602014068818

Country of ref document: DE

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1302725

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200915

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20200812

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20201112

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20201113

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20201112

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1302725

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200812

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20201212

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602014068818

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

26N No opposition filed

Effective date: 20210514

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20210630

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210625

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210630

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210625

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210630

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210630

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20220627

Year of fee payment: 9

Ref country code: DE

Payment date: 20220620

Year of fee payment: 9

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20220628

Year of fee payment: 9

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602014068818

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H04N0005374500

Ipc: H04N0025770000

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20201214

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20140625

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230822

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602014068818

Country of ref document: DE

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20230625

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200812

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20240103

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230625

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230630