EP2929570A1 - Module solaire avec boîte de jonction - Google Patents
Module solaire avec boîte de jonctionInfo
- Publication number
- EP2929570A1 EP2929570A1 EP13799579.1A EP13799579A EP2929570A1 EP 2929570 A1 EP2929570 A1 EP 2929570A1 EP 13799579 A EP13799579 A EP 13799579A EP 2929570 A1 EP2929570 A1 EP 2929570A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- contact
- contact hole
- photovoltaic module
- bus bar
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002131 composite material Substances 0.000 claims abstract description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 71
- 238000005476 soldering Methods 0.000 claims description 49
- 229910052742 iron Inorganic materials 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 24
- 239000006096 absorbing agent Substances 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 14
- -1 polybutylene Polymers 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000005361 soda-lime glass Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229920001748 polybutylene Polymers 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 229920002367 Polyisobutene Polymers 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 239000005077 polysulfide Substances 0.000 claims description 2
- 229920001021 polysulfide Polymers 0.000 claims description 2
- 150000008117 polysulfides Polymers 0.000 claims description 2
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 239000005341 toughened glass Substances 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 122
- 239000004020 conductor Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229920001169 thermoplastic Polymers 0.000 description 6
- 239000004416 thermosoftening plastic Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000011074 autoclave method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- MAHNFPMIPQKPPI-UHFFFAOYSA-N disulfur Chemical compound S=S MAHNFPMIPQKPPI-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920009441 perflouroethylene propylene Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a solar module with junction box, a method for its production and the use according to the invention.
- Photovoltaic layer systems for the direct conversion of solar radiation into electrical energy are well known.
- the materials and the arrangement of the layers are coordinated so that incident radiation from one or more semiconducting layers with the highest possible radiation yield is converted directly into electrical current.
- Photovoltaic and extensive coating systems are called solar cells.
- Solar cells contain a semiconductor material, whereby so far the greatest efficiencies of more than 20% could be achieved with high-performance solar cells made of monocrystalline, polycrystalline or microcrystalline silicon or gallium arsenide. So far, most systems are based on crystalline silicon. With regard to the technological handling and the efficiency have thin-film solar cells with a semiconductor layer of amorphous, micromorphous or polycrystalline silicon, cadmium telluride (CdTe), gallium arsenide (GaAs) or a chalcopyrite compound, in particular copper indium / gallium Dischwefel / diselenide , abbreviated by the formula Cu (ln, Ga) (S, Se) 2 , proved to be advantageous. In particular, copper indium diselenide (CulnSe 2 or CIS) is characterized by a particularly high absorption coefficient due to its adapted to the spectrum of sunlight band gap.
- CdTe cadmium telluride
- GaAs gallium arsenide
- An electrical circuit of several solar cells is referred to as a photovoltaic or solar module.
- the circuit of solar cells is permanently protected from environmental influences in known weather-resistant structures.
- two slices of low-iron soda-lime glass and adhesion-promoting polymer films are connected to the solar cells to form a weather-resistant solar module.
- the solar modules can be connected via junction boxes in a circuit of several solar modules.
- the circuit of solar modules is connected via known power electronics with the public utility network or a self-sufficient electrical power supply.
- each thin-film solar module has two voltage connections.
- two of the back electrode layer-contacting bus bars are provided which are each electrically connected to a led to the module back sheet or ribbon conductors.
- the two foil conductors are connected to one or more junction boxes, which are provided with a connection cable or a plug connection.
- junction box is known for example from DE 102005025632 A1.
- the solar module with other solar modules can be connected in series to a module string or connected to an electrical load, which is often an inverter for converting the generated DC voltage into an AC voltage suitable for the public power grid.
- the foil conductors are manually connected to the junction boxes, for which purpose, for example, clamping contacts are provided.
- a simple and inexpensive automation is not possible, so that the production of photovoltaic modules is associated with relatively high production costs.
- EP 2 289 658 A1 discloses a method for ultrasonically soldering connection conductors to the connection contacts of a solar cell.
- EP 2 296 181 A2 discloses a solar module having contact elements mounted in a contact hole and having an opening which is filled with the solder when the contact elements are soldered to the associated electrical conductors of the solar module.
- enough solder must be applied to the electrical conductors to completely fill the opening and beyond an excess of solder which engage behind the electrical conductors side of the contact elements, so that a stable mechanical connection between the contact elements and the electrical conductors is guaranteed.
- the object of the present invention is a photovoltaic module with junction box, which allows for improved life and a corrosion-resistant electrical contacting, as well as an economical method for its production, which allows automation of production to provide.
- the photovoltaic module according to the invention comprises at least:
- At least one bus bar which electrically conductively connects the photovoltaic layer system to at least one contact element
- At least one junction box which has the at least one contact hole with
- Contact element covers and is attached to the front window and / or rear window
- the contact element is electrically conductively connected to the bus bar via a contact surface
- the bus bar has a tinning
- the tinning has the single to double diameter of the contact surface
- the contact element comprises at least one contact pin, a contact counterpart and a spring
- the contact pin is located within the contact hole, with its end protruding out of the contact hole and contacting the contact counterpart there.
- the spring causes a contact pressure of the contact pin to the bus bar and thus improves the contact. This creates a solderless, clamping connection between the contact elements and the bus bars. This is particularly advantageous because, on the one hand, the connection is made reversible and, on the other hand, a considerable simplification of the production process is possible.
- soldering the contact element with the bus bar as known in the prior art, a sufficiently large amount of solder is used, so that the gap between the parts to be soldered is completely filled with the solder mass. Only then can a sufficient stability of the solder joint be ensured.
- the formation of a convex solder fillet is a quality criterion since it is thus indirectly ensured that the gap is completely filled with solder paste. Immediate optical control of the solder joint is not possible.
- the inventive local tinning of the busbar in conjunction with a contact element with spring allows in comparison to a soldered connection a significant material savings, for example, no Lotüberschuss must be used and a thin wetting of the contact surface with tin is sufficient. Furthermore, the production process can be simplified, since the quality of the tinning, in contrast to a solder mass in the gap, can be checked directly by looking into the contact hole. Only then is the contact element with spring inserted into the contact hole.
- the plug connection between the contact pin and contact counterpart can in principle be configured in any desired way as long as the contacting pin on the contact pin electrical contacting of the two components occurs.
- a tinning in the area of the contact surface causes a high corrosion resistance of the electrical contact and thus leads to a tremendous improvement in the life of the photovoltaic module. Since the tinning can be limited to the contact surface no complete tinning of the bus bar must be made, whereby production and material costs can be saved.
- the front pane is the pane of the photovoltaic module facing the light incidence.
- Rear window is the disc facing away from the light incident.
- the front window and the rear window each have a front side and a rear side.
- the front side refers to the side facing the light. With back side the side facing away from light is called.
- the rear side of the front pane and the front side of the rear pane face each other and are interconnected by an intermediate layer by lamination.
- the contact surface between contact element and bus bar has a diameter of 1 mm to 20 mm, preferably from 2 mm to 10 mm, particularly preferably from 4 mm to 6 mm.
- the contact surface lies within the contact hole, wherein the contact hole is arranged above the contact surface of the bus bar. This means that the projection of the contact hole on the bus bar contains the contact surface and it is located on the part of the bus bar, which is accessible through the contact hole.
- the contact surface of the bus bar with the contact element is preferably located in the middle of the extension direction of the bus bar.
- a more homogeneous distribution of the current flow and a lower maximum current density in the region of the current pick-off is achieved than with an electrical contact at one end of the bus bar.
- This allows the use of bus bars with a smaller cross-sectional area, for example, with a smaller width.
- the photovoltaically active area can be increased and the area-dependent power can be increased.
- the photovoltaic module has two contact elements, which are each arranged in a contact hole, wherein a contact element contacts a front electrode layer and a contact element contacts a back electrode layer of the photovoltaic module.
- the junction box is attached via the contact counterpart on the provided with the at least one contact hole front window or rear window.
- bus bar a bus bar
- the bus bar is advantageously designed as a band or strip.
- the bus bar contains at least one metal or metal alloy or consists of a metal or a metal alloy.
- any electrically conductive material that can be processed into films can be used for the bus bar.
- Particularly suitable materials for the bus bar are, for example, tungsten, copper, nickel, manganese, aluminum, gold, silver, chromium, iron and / or alloys thereof.
- the bus bar has, for example, a thickness of 0.01 mm to 0.5 mm and a width of 2 mm to 16 mm.
- a bus bar is preferably connected to the positive voltage terminal of the photovoltaic module and the second bus bar to the negative voltage terminal of the photovoltaic module.
- the bus bar is electrically conductively contacted via at least one welding point with the photovoltaic layer system.
- connection of the electrically conductive contact element with the bus bar can also take place via a bridging element, for example a suitably arranged further strip of an electrically conductive foil, which is in contact with the actual bus bar.
- the junction box includes a connection cable, via which the photovoltaic layer system is contacted in an electrically conductive manner.
- the contact element is fixed by a sealing means in the contact hole.
- the sealing agent preferably comprises polyisobutylene, polybutylene, polyisobutyleneisoprene, polysulfide, polyurethane, silicone and / or copolymers and / or mixtures thereof.
- the contact elements can be guided in time before or after the introduction of the sealing material through the contact hole or the contact holes.
- the sealing means is preferably introduced into the contact hole or the contact holes after the lamination composite has been laminated.
- the connection between the electrically conductive contact elements and the bus bars can be done, for example by welding Shen, bonding, soldering, terminals or by means of an electrically conductive adhesive.
- the electrically conductive contact elements are arranged after the introduction of the sealing means in the contact hole or the contact holes.
- the sealing agent is penetrated by contact elements.
- the bus bars must be arranged within the laminated photovoltaic module so that a contact after lamination and introduction of the sealant is possible.
- the bus bar is preferably arranged in area over the contact hole directly on the disc having the contact hole arranged.
- the transition between on the one hand the contact hole and on the other hand, the inside surface and / or the outside surface of the disc, which has the contact hole, provided with a chamfer Beveling reduces the risk of damaging the disc with the via hole in the manufacture of the photovoltaic module, such as cracks.
- the chamfer has, for example, an angle of 30 ° to 60 °, in particular about 45 ° to the surface of the disc.
- the depth of the chamfer, measured from the surface of the disc is for example from 0.2 mm to 1 mm. As the diameter of the contact hole in the context of the invention, the diameter in the region not provided with the chamfer applies.
- the contact hole has a diameter of 1 mm to 20 mm, preferably from 2 mm to 10 mm, particularly preferably from 4 mm to 6 mm.
- the front pane of the photovoltaic module preferably contains a non-prestressed, partially prestressed or prestressed or a hardened, for example a thermal one or chemically tempered glass.
- the front pane preferably contains soda-lime glass, low-iron soda-lime glass or borosilicate glass. This is particularly advantageous in terms of the stability of the photovoltaic module, the protection of the photovoltaic layer system from mechanical damage and the transmission of sunlight through the front pane.
- the rear pane of the photovoltaic module contains, in an advantageous embodiment, a non-prestressed, partially prestressed or prestressed or a hardened, for example a thermally or chemically hardened glass.
- the rear pane preferably contains soda-lime glass, low-iron soda-lime glass or borosilicate glass.
- the rear pane can also contain, for example, a plastic, for example polyethylene, polypropylene, polycarbonate, polymethyl methacrylate and / or mixtures thereof, a glass-fiber-reinforced plastic, a metal or a metal alloy, for example stainless steel.
- the front pane and the rear pane preferably have a thickness of 1 mm to 10 mm, particularly preferably 2 mm to 5 mm.
- the area of the front pane and the rear pane can be from 100 cm 2 to 18 m 2 , preferably from 0.5 m 2 to 3 m 2 .
- the front and rear wheels can be flat or curved.
- the contact hole can be arranged in the front pane or in the rear pane.
- the contact hole is arranged in the rear window.
- the contact element can be elegantly mounted on the side facing away from the light incident side of the photovoltaic module and connected there with the connection cable without the photovoltaically active surface is shaded by elements of the electrical contact.
- the photovoltaic layer system effects the charge carrier separation required for the conversion of radiant energy into electrical energy.
- the photovoltaic layer system preferably comprises at least one photovoltaically active absorber layer between a front electrode layer and a back electrode layer.
- the front electrode layer is arranged on the side facing the incidence of light absorber layer.
- the back electrode layer is arranged on the side facing away from the light incident side of the absorber layer.
- the photovoltaically active absorber layer according to the invention is not limited to a specific type.
- the photovoltaic module is a Thin-film photovoltaic module. These are understood as layer systems with thicknesses of only a few micrometers. In principle, all absorber layers familiar to the person skilled in the art for thin-film photovoltaic modules can be used.
- the absorber layer may contain, for example, amorphous or micromorphous silicon, semiconducting organic polymers or oligomers, cadmium telluride (CdTe), gallium arsenide (GaAs) or cadmium selenide (CdSe).
- the absorber layer contains a p-type chalcopyrite semiconductor such as a compound of the group copper indium sulfur / selenium (CIS), for example copper indium diselenide (CulnSe 2 ), or a compound of the group copper indium gallium Sulfur / selenium (CIGS), for example Cu (InGa) (SSe) 2 . Particular preference is given to using CI (G) S-based photovoltaic modules.
- the absorber layer preferably has a layer thickness of 500 nm to 5 ⁇ , more preferably from 1 ⁇ to 3 ⁇ .
- the absorber layer can be doped with metals, preferably sodium.
- the absorber layer can also contain, for example, monocrystalline or polycrystalline silicon.
- the back electrode layer may contain, for example, at least one metal, preferably molybdenum, titanium, tungsten, nickel, titanium, chromium and / or tantalum.
- the back electrode layer preferably has a layer thickness of 300 nm to 600 nm.
- the back electrode layer may comprise a layer stack of different individual layers.
- the layer stack contains a diffusion barrier layer of, for example, silicon nitride in order to prevent diffusion of, for example, sodium from the substrate into the photovoltaically active absorber layer.
- the front electrode layer is transparent in the spectral region in which the absorber layer is sensitive.
- the front electrode layer may contain, for example, an n-type semiconductor, preferably aluminum-doped zinc oxide or indium-tin oxide.
- the front electrode layer preferably has a layer thickness of 500 nm to 2 ⁇ m.
- the electrode layers may also contain silver, gold, copper, nickel, chromium, tungsten, tin oxide, silicon dioxide, silicon nitride and / or combinations and mixtures thereof.
- the photovoltaic layer system preferably has a peripheral distance to the outer edges of the photovoltaic module of 5 mm to 20 mm, particularly preferably 10 mm to 15 mm in order to be protected against moisture penetration or shading by fasteners on the edge.
- the photovoltaic layer system may be applied on the inside surface of the rear pane (substrate configuration).
- the photovoltaic layer system may alternatively be applied to the inside surface of the front pane (superstrate configuration).
- the photovoltaic layer system may also be incorporated in the thermoplastic layer, for example between a first and a second film of the intermediate layer.
- the photovoltaic module according to the invention has the substrate configuration.
- the photovoltaic layer system is divided in an advantageous embodiment of the invention with known methods for producing a thin-film solar module by a suitable structuring and interconnection of back electrode layer, semiconductor layer, and front electrode layer into individual photovoltaically active areas, so-called solar cells.
- a suitable method is known, for example, from EP 2200097 A1.
- the subdivision is made by incisions using a suitable structuring technology such as laser writing and mechanical processing, for example by lifting or scribing.
- the individual solar cells are connected in series via an area of the back electrode layer in integrated form.
- the two electrically conductive connection elements are preferably electrically conductively connected only to the back electrode layer.
- the resulting positive and the resulting negative voltage terminal of the photovoltaic module are then passed over the back electrode layer and contacted there electrically.
- the two bus bars are preferably each applied to the back electrode layer and electrically conductively connected to the back electrode layer.
- the positive and negative voltage connections can also be routed via the front electrode layer and contacted there electrically.
- a voltage connection can also be made via the back electrode layer and the second voltage connection via the front electrode layer.
- the electrically conductive connecting elements and / or the bus bars and / or bridging elements are preferably conducted before the lamination of the photovoltaic module by feedthroughs of the thermoplastic intermediate layer , so that an electrical contacting of the photovoltaic layer system through the at least one contact hole is possible therethrough.
- This is the case, for example, with a photovoltaic module in superstrate configuration in which the at least one contact hole is arranged in the rear pane.
- the contact hole is preferably closed on the outer surface of the disk, which has the contact hole, with a connection housing known per se or a junction box.
- a connection housing known per se or a junction box.
- junction boxes are known from DE 10 2005 025 632 A1 and DE 10050614 C1.
- the contact elements are preferably connected to external connection cables.
- the front pane is connected to the rear pane via at least one thermoplastic intermediate layer.
- the connection between the front screen and rear window is made over a large area via the photovoltaic layer system.
- the intermediate layer preferably contains thermoplastic materials, such as polyvinyl butyral (PVB) and / or ethylene vinyl acetate (EVA) or several layers thereof, preferably with thicknesses of 0.3 mm to 0.9 mm.
- the intermediate layer can also be polyurethane (PU), polypropylene (PP), polyacrylate, polyethylene (PE), polycarbonate (PC), polymethylmethacrylate, polyvinyl chloride, polyacetate resin, casting resins, acrylates, fluorinated ethylene-propylenes, polyvinyl fluoride, ethylene-tetrafluoroethylene, copolymers and / or mixtures thereof.
- PU polyurethane
- PP polypropylene
- PE polyacrylate
- PE polyethylene
- PC polycarbonate
- polymethylmethacrylate polyvinyl chloride
- polyacetate resin casting resins
- acrylates fluorinated ethylene-propylenes
- polyvinyl fluoride polyvinyl fluoride
- ethylene-tetrafluoroethylene copolymers and / or mixtures thereof.
- a suitable photovoltaic module can be produced by methods known per se.
- the photovoltaic layer system can be applied to the front pane or the rear pane, for example, by sputtering, vapor deposition or chemical vapor deposition (CVD).
- the photovoltaic layer system can also be arranged between a first and a second thermoplastic film.
- the front pane and / or the rear pane are provided with the contact hole or the contact holes before or after the application of the photovoltaic layer system by drilling.
- the bore is preferably provided with chamfers in the region of the surface of the disc.
- bus bars Prior to laminating the photovoltaic module, bus bars are preferably suitably arranged in the composite and connected to the photovoltaic layer system.
- the photovoltaic layer system and the bus bars are preferably welded together at a plurality of welding points. Thereafter, the local tinning of the bus bars according to the inventive method.
- the bonding of the front disk to the rear disk via the thermoplastic intermediate layer typically takes place under the action of heat, vacuum and / or pressure, for example by autoclave method, vacuum bag method, vacuum ring method, calender method, vacuum laminator or by combinations thereof.
- the invention further comprises a method for producing a photovoltaic module with junction box, wherein
- the collecting conductor is ultrasonically tin-plated
- a junction box with connection cable is placed on the contact element.
- the method according to the invention enables targeted local tinning of the bus bars at the contact surfaces, which form these with the contact elements. Thus, can be dispensed with a much more expensive complete tinning of the bus bars. Furthermore, the inventive method allows a simplification of production, since the tinning of the busbar are performed fully automatically can.
- the ultrasonic soldering iron and the counterholder are guided over a robot arm.
- the metering of the solder deposit on the soldering tip of the ultrasonic soldering can be done before, during or after the process steps a) and b).
- the solder deposit is preferably a tin depot.
- the counter-holder in the region of the bus bar on a thermal insulation. This prevents heating of the counter-holder during the soldering process.
- the thermal insulation is polymer-containing, more preferably, the thermal insulation is polyethylene, polyvinyl chloride, polytetrafluoroethylene, polyesters, polycarbonates, rubber, silicone rubber, polyamide, polyurethane and / or mixtures and / or copolymers thereof.
- the contact element is arranged after the introduction of the sealing means in the contact hole, wherein the sealing means is penetrated by the contact element.
- a seal of the contact hole increases in a particularly advantageous manner, the life of the photovoltaic module, since so no moisture can penetrate and corrosion can be avoided.
- the invention comprises a device for automated ultrasonic tinning of the bus bar of a photovoltaic module according to the invention comprising:
- the counter-holder and the ultrasonic soldering iron can be moved vertically independently of each other
- a rear window or front window of a photovoltaic module with photovoltaic Layer system, bus bar and contact hole inserted, with the contact hole is above the soldering tip of the ultrasonic soldering iron.
- the soldering tip of the ultrasonic soldering iron is in its geometry, especially in its diameter, dimensioned so that it can be passed through the contact hole to contact the bus bar running there.
- the soldering tip of the ultrasonic soldering iron is flat and can thus firstly receive a solder deposit and, on the other hand, lies flat on the collecting conductor during the soldering process.
- Figure 1 a shows a cross section through an inventive photovoltaic module with im
- FIG. 1b shows an enlarged view of the section A from FIG. 1a
- Figure 2a shows an inventive device for local tinning of
- FIG. 2b shows a cross-section of the device according to FIG. 2a, wherein the counter-holder is placed on the busbar,
- Figure 3 shows an embodiment of the method according to the invention with reference to a
- FIGS 1 a and 1 b show a cross section through an edge region of a photovoltaic module with tinned bus bars in the region of the contact surface.
- the photovoltaic module comprises a front pane (1), a rear pane (2) and a photovoltaic layer system (3) which is applied to the inside surface of the rear pane (2).
- the rear pane (2) and the front pane (1) are interconnected over a large area via the photovoltaic layer system (3) by means of a thermoplastic intermediate layer (4).
- the front screen (1) is transparent to sunlight and consists of tempered, extra-white, low-iron glass.
- the rear window (2) is made of soda lime glass.
- the front disk (1) and the rear disk (2) have a thickness of, for example, 1, 6 mm to 2.85 mm.
- the photovoltaic module has a size of 1587 mm x 664 mm.
- the intermediate layer (4) contains polyvinyl butyral (PVB) and has a layer thickness of 0.76 mm.
- the photovoltaic layer system (3) comprises a rear electrode layer (10) arranged on the rear pane (2), which contains molybdenum and has a layer thickness of approximately 300 nm.
- the photovoltaic layer system (3) further contains a photovoltaically active absorber layer (1 1), which contains sodium-doped Cu (InGa) (SSe) 2 and has a layer thickness of about 2 ⁇ .
- the photovoltaic layer system (3) further includes a front electrode layer (12) containing aluminum-doped zinc oxide (AZO) and having a layer thickness of about 1 ⁇ .
- AZO aluminum-doped zinc oxide
- a buffer layer which contains a single layer of cadmium sulfide (CdS) and a single layer of intrinsic zinc oxide (i-ZnO).
- the buffer layer effects an electronic adaptation between absorber layer (1 1) and front electrode layer (12).
- the photovoltaic layer system (3) is subdivided by known methods for producing a thin-film photovoltaic module into individual photovoltaically active regions, so-called solar cells, which are connected in series with each other over a region of the back electrode layer (10).
- the photovoltaic layer system (3) is mechanically abraded in the edge region of the back plate (2) with a width of 15 mm.
- the rear pane (2) has, in the edge region not provided with photovoltaic layer system (3), two contact holes (5) which are provided for mounting electrically conductive contact elements (9) in order to electrically contact the photovoltaic layer system (3). In the illustrated area of the photovoltaic module, one of these contact holes (5) can be seen.
- the contact hole (5) is covered on the inside surface of the back plate (2) by a bus bar (13) which is in electrical contact with the back electrode (10).
- the bus bar (13) is intended to be contacted with a contact element (9).
- the bus bar (13) is configured as a strip of aluminum with a thickness of, for example, 0.01 mm to 0.5 mm, a length of, for example, 1567 mm and a width of, for example, 4 mm to 16 mm.
- the contact hole (5) has a diameter of 4.5 mm.
- the contact hole (5) is provided on the surfaces of the rear disc (2) with a chamfer at an angle of 45 °.
- the depth of the chamfer measured from the respective surface of the back plate (2), for example, 0.3 mm to 0.7 mm.
- the contact element (9) is a spring contact element which, after the introduction of the sealing means (6), is inserted through the contact hole (5) and brought into contact with the bus bar (13).
- the contact element (9), shown here as a spring contact element consists of a contact pin (9.1), which rests on a contact surface (15) on the bus bar (13). Au ßerraum the contact hole (5) on the outside surface of the rear window (2), a contact counterpart (9.2) is mounted, which together with a spring (9.3) serves as a pressing device.
- the surface on which the contact element (9) and the bus bar (13) come into direct contact is defined as the contact surface (15).
- the bus bar (13) has a tinning (16) in the area of the contact surface (15).
- the tinning (16) has a diameter of 3.5 mm, while the contact surface (15) has a diameter of 3.0 mm.
- This tinning (16) of the bus bar (13) allows a corrosion-resistant design of the contact surface (15), whereby the life of the photovoltaic module according to the invention is substantially increased.
- a local limitation of the tinning (16) on the contact surface and its immediate environment makes sense from an economic point of view, as this material and production costs can be saved.
- the contact hole (5) can be closed later.
- a known junction box (7) on the rear pane (2) above the contact hole (5) are arranged.
- the contact element (9) can be connected to an outer connection cable (8).
- FIG. 2a and 2b show an inventive device for local tinning of the bus bar of a photovoltaic module.
- the device according to the invention comprises an ultrasonic soldering iron (19), a counter holder (17) arranged opposite the ultrasonic soldering iron (19) and two holders (20) on which the substrate to be processed can be placed.
- the ultrasonic soldering iron (19) is located between the holders (20), wherein the soldering tip of the ultrasonic soldering iron (19) points in the direction of the counter-holder (17).
- the projection of the soldering tip on the counter-holder (17) and the adjacent area contain a thermal insulation (18).
- the thermal insulation (18) is made of silicone rubber.
- the counter-holder (17) and the ultrasonic soldering iron (19) are independently movable vertically, wherein the busbar to be tinned in the tinning between the counter-holder (17) and ultrasonic soldering iron (19).
- a back plate (2) with a photovoltaic layer (3), a contact hole (5) and a bus bar (13) is placed on the holders (20), the contact hole (5) being directed in the direction of the ultrasonic soldering iron (19 ) is aligned.
- the bus bar (13) is connected via a plurality of welding points (14) to the photovoltaic layer system (3).
- the soldering tip of the ultrasonic soldering iron (19) has a solder deposit (21), which consists of tin.
- the soldering tip is passed through the contact hole (5) during the tinning process until it contacts the bus bar (13) (not shown). This process can be completely automated, so that a tinning with the device according to the invention causes a significant cost savings.
- FIG. 3 shows by way of example an embodiment of the method according to the invention for producing a photovoltaic module with a corrosion-resistant contact point.
- a rear pane (2) with photovoltaic layer system (3) at least one contact hole (5) and at least one bus bar (13) is provided in the region of the contact hole (5).
- a counter-holder (17) with thermal insulation (18) is placed on the bus bar (13) and from the opposite side, the soldering tip of a Ultraschalllötkolbens (19) with solder deposit (21) through the contact hole (5) to the bus bar (13).
- the bus bar (13) lying between the counter holder (17) with thermal insulation (18) and the soldering tip of the ultrasonic soldering iron (19) is then tinned on the contact surface (15) in the region of the contact hole (5).
- the ultrasonic soldering iron (19) and the counter-holder (17) are removed and the rear disk (2) is laminated with a front disk (1).
- an intermediate layer (4), then a front pane (1) is placed on the rear pane (2) and the arrangement is laminated to form a laminated pane.
- the contact hole (5) is sealed with a sealing means (6) and in the contact hole (5), a contact element (9) is inserted, which penetrates the sealing means (6) and the bus bar (13) contacted with tinning (16).
- On the contact element (9) is finally a junction box (7) with connection cable (8) placed.
Abstract
L'invention concerne un module photovoltaïque comprenant au moins : ‑ un ensemble stratifié constitué d'une vitre arrière (2), d'un système de couches photovoltaïques (3) et d'une vitre avant (1) disposées les unes par-dessus les autres, ‑ au moins un élément de contact (9) dans au moins un trou de contact (5) percé dans la vitre avant (1) et/ou dans la vitre arrière (2), ‑ au moins un conducteur omnibus (13) qui relie le système de couches photovoltaïques (3) de manière électriquement conductrice à au moins un élément de contact (9), et ‑ au moins une boîte de jonction (7) qui recouvre le ou les trous de contact (5) avec un élément de contact (9) et qui est fixée à la vitre avant (1) et/ou à la vitre arrière (2). Selon l'invention ‑ l'élément de contact (9) est relié de manière électriquement conductrice au conducteur omnibus (13) par le biais d'une surface de contact (15), ‑ le conducteur omnibus (13) comporte un étamage (16) et - l'étamage (16) a un diamètre égal à une à deux fois le diamètre de la surface de contact (15), ‑ l'élément de contact (9) comprend au moins une broche de contact (9.1), un élément de contact antagoniste (9.2) et un ressort (9.3), et - la liaison entre l'élément de contact (9) et le conducteur omnibus (13) se fait sans soudure, par serrage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13799579.1A EP2929570A1 (fr) | 2012-12-06 | 2013-12-05 | Module solaire avec boîte de jonction |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12195784 | 2012-12-06 | ||
PCT/EP2013/075640 WO2014086914A1 (fr) | 2012-12-06 | 2013-12-05 | Module solaire avec boîte de jonction |
EP13799579.1A EP2929570A1 (fr) | 2012-12-06 | 2013-12-05 | Module solaire avec boîte de jonction |
Publications (1)
Publication Number | Publication Date |
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EP2929570A1 true EP2929570A1 (fr) | 2015-10-14 |
Family
ID=47598588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13799579.1A Withdrawn EP2929570A1 (fr) | 2012-12-06 | 2013-12-05 | Module solaire avec boîte de jonction |
Country Status (2)
Country | Link |
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EP (1) | EP2929570A1 (fr) |
WO (1) | WO2014086914A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10063185B2 (en) | 2015-04-17 | 2018-08-28 | Solarcity Corporation | Retractable wiring system for a photovoltaic module |
US10562274B1 (en) * | 2016-02-22 | 2020-02-18 | Apple Inc. | Glass fastening and sealing systems |
EP3573110A1 (fr) * | 2018-05-25 | 2019-11-27 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Module solaire à surface d'ouverture agrandie |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10050614C1 (de) | 2000-10-12 | 2002-02-07 | Dorma Gmbh & Co Kg | Solarmodul |
DE10334935B3 (de) * | 2003-07-31 | 2004-12-23 | Harting Electric Gmbh & Co. Kg | Anschlusseinrichtung für ein Solarstrommodul |
DE102005025632B4 (de) | 2005-06-03 | 2015-09-17 | Te Connectivity Germany Gmbh | Verbindungsvorrichtung für den Anschluss elektrischer Folienleiter |
DE102008017522A1 (de) * | 2008-04-04 | 2009-10-08 | Günther Spelsberg GmbH & Co. KG | Solarzellenmodul |
EP2279529A2 (fr) | 2008-04-16 | 2011-02-02 | Molex Incorporated | Boite de jonction pour panneau solaire |
EP2200097A1 (fr) | 2008-12-16 | 2010-06-23 | Saint-Gobain Glass France S.A. | Procédé pour la fabrication d'un dispositif photovoltaïque et système de formation d'un objet |
EP2289658A1 (fr) | 2009-08-31 | 2011-03-02 | MTA Automation AG | Procédé et dispositif de soudage de conducteurs de connexion à un capteur solaire |
DE102009040568A1 (de) | 2009-09-08 | 2011-03-24 | Yamaichi Electronics Deutschland Gmbh | Anschlußdose, Verwendung, Solarpaneel und Verfahren |
DE102009049812A1 (de) * | 2009-10-19 | 2011-04-21 | Yamaichi Electronics Deutschland Gmbh | Anschlußdose, Verfahren zum Herstellen eines Solarpaneels, Deckelvorrichtung und Verwendung der Deckelvorrichtung |
-
2013
- 2013-12-05 WO PCT/EP2013/075640 patent/WO2014086914A1/fr active Application Filing
- 2013-12-05 EP EP13799579.1A patent/EP2929570A1/fr not_active Withdrawn
Non-Patent Citations (1)
Title |
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See references of WO2014086914A1 * |
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WO2014086914A1 (fr) | 2014-06-12 |
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