EP2901501A1

EP2901501A1 - Light-emitting semiconductor component

Info

Publication number: EP2901501A1
Application number: EP13766313.4A
Authority: EP
Inventors: Alexander Wilm
Original assignee: Osram Opto Semiconductors GmbH
Current assignee: Ams Osram International GmbH
Priority date: 2012-09-26
Filing date: 2013-09-24
Publication date: 2015-08-05
Also published as: US9373759B2; DE102012111123A1; CN104737311A; US20150243855A1; WO2014048906A1

Abstract

The invention relates to a light-emitting semiconductor component, having: - a light-emitting semiconductor chip (1) with an active region (11) which, in operation, emits light (31) having a first spectrum; - a wavelength conversion element (2) which is positioned remote from the semiconductor chip (1), is downstream of the semiconductor chip (1) in the beam path of the light (31) having the first spectrum and converts the light (31) having the first spectrum at least partially into light (32) having a second spectrum; and - a filter layer (3), which reflects at least a part (34) of a light (33) incident on the semiconductor component from the outside. The part (34) of the light (33) incident on the semiconductor component from the outside that is reflected by the filter layer (3) has a visible wavelength range and overlaps a colour impression produced by the wavelength conversion element when the semiconductor component is in a switched-off state.

Description

description

Light-emitting semiconductor device

It becomes a semiconductor light-emitting device

indicated.

For generating white light by means of a

LED chips, for example, a blue

emissive LED chip downstream of a phosphor, which converts a portion of the light emitted by the LED chip blue light in yellow light. During the

LED chip with the phosphor in the switched-on

Condition thus white shining, the awakening

Phosphor with a switched-off LED chip a yellow color impression, which can be distracting.

At least one object of certain embodiments is to provide a semiconductor device with a

Specify wavelength conversion element in which in an off state, an undesirable color impression can be reduced or avoided.

This object is solved by the subject matter with the features of the independent patent claim. Advantageous ^embodiments and refinements of the subject matter are indicated in the dependent claims and will become apparent from the following description and the drawings.

According to at least one embodiment, a

Semiconductor device to a semiconductor chip having an active region which emits light in operation with a first spectrum. The semiconductor chip is in the beam path of the light with the first spectrum downstream of a wavelength conversion element that at least partially converts light with the first spectrum into light having a second spectrum. The wavelength conversion element is in particular placed away from the semiconductor chip. Furthermore, the

Semiconductor device on a filter layer, the at least part of an external to the semiconductor device

Reflected light. According to a further embodiment, the light incident from outside on the semiconductor component corresponds to a light which is not emitted by the active region of the semiconductor chip. That may mean that from the outside on the

Incident light is ambient light, such as sunlight and / or light coming from the semiconductor device

artificial light sources is emitted.

Here and below, "spectrum" or

"Part Spectrum" means a spectral distribution of light having at least one spectral component with one wavelength or a plurality of spectral components having a plurality of wavelengths and / or ranges of wavelengths.A first spectrum and a second spectrum are the same hereinafter when the spectral components of the first and the second spectrum and their relative intensities are equal, the absolute intensity of the first spectrum being equal to that of the first spectrum

absolute intensity of the second spectrum may differ.

Furthermore, the feature "partially" refers to the absorption, transformation and / or reflection of a

Spectrum on a partial spectrum of the spectrum, ie on a part of the spectral components of this spectrum, and / or to a part of an intensity of the spectrum or spectral components of this.

Furthermore, "transforming" can mean that the partial spectrum of the light with the first spectrum, that of the

Wavelength conversion element is at least partially converted into light with the second spectrum, and the second spectrum are not equal. This may in particular mean that the second spectrum has a spectral distribution which is different from the spectral distribution of the partial spectrum of the light with the first spectrum. In other words, the wavelength conversion element can be

Have absorption spectrum and an emission spectrum, wherein the absorption spectrum and the emission spectrum are not equal. Here, the absorption spectrum on the partial spectrum of the light with the first spectrum and the emission spectrum on the second spectrum. Furthermore, the absorption spectrum and the emission spectrum may each comprise further spectral components which are not in the partial spectrum of the light with the first spectrum

or the second spectrum are included.

If light with a certain wavelength falls from outside or from the active area of the semiconductor chip on the

Wavelength conversion element and has the

When the absorption spectrum of the wavelength conversion element has a spectral component of this particular wavelength, the light of that particular wavelength will become light having one or more other wavelengths different in wavelength from the one of the wavelengths

Emission spectrum included, re-radiated. As a result, it can also be used externally on the

Semiconductor device incident light be possible that the wavelength conversion element in an off state of the semiconductor device in a viewer according to the absorption spectrum and the

Emission spectrum can give a color impression, which in itself can be undesirable. This color impression may be undesirable, for example, as that he

different from the color impression of the operation of the

Semiconductor device emitted light can be.

According to a particularly preferred embodiment, the part of the filter layer reflected from the outside

incident light on a visible wavelength range. In a switched-off state of the semiconductor device, the part of the light incident from the outside, which is reflected by the filter layer, can therefore produce a part of the light from the outside

Overlap the wavelength conversion element caused color impression. This may allow an external observer to look at the

Wavelength conversion element with the filter layer perceives a different color impression than he at the sight of the

Wavelength conversion element would perceive alone.

By contrast, during operation of the semiconductor component, an external observer can, in particular, perceive a light which corresponds to a superposition of the part of the light with the first spectrum, which is not converted by the wavelength conversion element, and the light with the second spectrum.

In particular, it may be advantageous if the of the

Filter layer reflected part of the outside of the

Semiconductor device incident light together with the wavelength conversion element alone caused Color impression by overlaying a color impression in a viewer allows, the color of the light incident on the outside of the semiconductor device light and / or emitted by the semiconductor device during operation light

equivalent.

According to a further preferred embodiment, the filter layer is the wavelength conversion element in

Beam path of the light with the first spectrum downstream. In particular, the beam path of the light with the second spectrum can also correspond to the beam path of the light with the first spectrum, so that preferably the filter layer can also be arranged downstream of the wavelength conversion element in the beam path of the light with the second spectrum.

Furthermore, the semiconductor component can have a

Have light emitting surface in the beam path of the light with the first spectrum and with the second spectrum. The light incident on the semiconductor component from the outside can in particular be incident on the light emission surface. The

Lichtabstrahlfläche may be arranged downstream of the filter layer in particular. The light emission surface can

For example, be formed by a main surface of the filter layer having an outer surface of the

Semiconductor component forms. Alternatively, the

Filter layer in the beam path of the emitted light, an optical element, such as a light-transmissive cover, a window and / or a lens, be arranged downstream, which is an outer surface of the semiconductor device

has, which then forms the light emitting surface.

According to another preferred embodiment, the filter layer is permeable to a portion of the light with the first spectrum. In particular, then light with the first spectrum, which is not converted by the wavelength conversion element into light with the second spectrum of the

Semiconductor device to be radiated.

In particular, the fact that a first element is "remotely placed" by a second element means that the first and second elements are spaced apart from each other and thus spatially separated. In the case of the wavelength conversion element, which is placed away from the semiconductor chip, this means in particular that the wavelength conversion element is not applied directly to the semiconductor chip and, for example, does not form a coating of the semiconductor chip. Furthermore, this means that the

Wavelength conversion element not indirectly on the

Semiconductor chip, for example by means of an adhesive or another bonding layer, is applied to the wavelength conversion element at a close distance

Apply coating on the semiconductor chip.

In particular, the wavelength conversion element does not form a coating of the semiconductor chip and is remote from

Semiconductor chip placed when the

Wavelength conversion element according to a preferred

Embodiment has a distance from the semiconductor chip, which is a multiple of a lateral extent of the

Semiconductor chips corresponds. The lateral extent of the

Semiconductor chips may be preferred by an edge length of the semiconductor chip perpendicular to a growth direction and along a main extension direction of the layers of

Be given semiconductor chips. In particular, the multiple of the lateral extent of the semiconductor chip may be at least two times, at least three times, or at least one Five times the lateral extent of the semiconductor chip. The space between the semiconductor chip and the wavelength conversion element may be free of material or may be with a gaseous medium, for example an inert gas or air, or a gel-like or solid material, for example a potting material for the

Semiconductor chip, in particular a transparent plastic such as a silicone, epoxy, acrylate, imide, carbonate, olefin or derivatives thereof, to be filled. The thickness of the material between the wavelength conversion element and the semiconductor chip, which is above the semiconductor chip, the distance of the wavelength conversion element from the semiconductor chip

is formed according to the previous embodiments as a multiple of a lateral extent of the semiconductor chip, so that between the

Wavelength conversion element and the semiconductor chip

arranged material forms no connection layer, by means of which the wavelength conversion element is applied at a small distance in the form of a coating on the semiconductor chip. Rather, the wavelength conversion element and the semiconductor chip form two elements of the light-emitting, which can be applied and arranged independently of one another

Semiconductor device. Such a spaced-apart arrangement of the wavelength conversion element to the semiconductor chip can also be referred to as a so-called "remote phosphor concept", while a wavelength conversion element not placed remotely from the semiconductor chip, which is not the subject of the light-emitting semiconductor component described here, is termed "chip-level". Coating "would fall.

According to a further embodiment, the

light emitting semiconductor device on a support on which the semiconductor chip is arranged. The carrier may be formed, for example, as a housing or carrier plate, and preferably based on plastic or a ceramic material. For example, the carrier may be formed as a housing, as a housing material

Plastic material, in which a lead frame

is arranged for example by a molding process. The lead frame is for mounting and electrical

Contacting the semiconductor chip. The semiconductor chip may be arranged, for example, in a recess of the housing. In the depression, for example, an advance

be arranged potting material. Furthermore, it is also possible for the housing material to surround the leadframe together with the semiconductor chip. For this purpose, the

Semiconductor chip mounted on the lead frame and electrically contacted and the lead frame with the

Semiconductor chip can then be transformed with the housing material. The wavelength conversion element may, supported by the carrier formed as a housing, in or on the housing

be arranged. In particular, that can be

Support wavelength conversion element on the material of the carrier and thus be placed over the semiconductor chip and placed remotely from the carrier.

Furthermore, the carrier may be formed, for example, as a plastic or ceramic plate on the electrical

Contact elements in the form of printed conductors and / or

Through holes are provided which serve for mounting and / or electrical contacting of the semiconductor chip. That placed away from the semiconductor chip

Wavelength conversion element can, for example, in the form a self-supporting wavelength conversion element

be formed, which is arranged as a cover, for example as a cup-shaped cover, on the semiconductor chip on the carrier. Furthermore, the carrier can

have supportive element, which is for example in the form of a frame around the semiconductor chip or as a deformation of the semiconductor chip and on or in the

Wavelength conversion element is placed away from the semiconductor chip placed.

For example, the carrier may be formed as a housing that encloses the semiconductor chip, wherein the

Wavelength conversion element and the filter layer are arranged on an outer side of the housing. Alternatively, it is also possible that the

Wavelength conversion element and the filter layer or even only the wavelength conversion element of

Housing material are enclosed. Instructs the wearer

Housing with a recess in which the semiconductor chip is arranged, the wavelength conversion element or the wavelength conversion element and the filter layer may be arranged in or on the recess spaced from the semiconductor chip. In particular, the Wellenlängenkonver ^¬ sion element between the semiconductor chip and the

Filter layer arranged. For example, the wavelength conversion element ^¬ each of the semiconductor chip and the filter layer arranged spatially spaced.

In another embodiment, this is

Wavelength conversion element formed as a cover or window over the semiconductor chip. The

Wellenlängenkonversionselement can disk or plate-shaped or curved, ie cup-shaped, be educated. Furthermore, it is also possible that the wavelength conversion element and the filter layer together as a cover or window over the semiconductor chip

are formed.

In particular, in the embodiments described here, the wavelength conversion element is not formed as a coating of the semiconductor chip by a

Sedimentation method, by an electrophoretic

Method, by sputtering, spraying, dispensing, inking or a similar method is applied. Furthermore, in the embodiments described herein, the

Wavelength conversion element also not formed by a potting of the semiconductor chip, the semiconductor chip

immediately surrounds and encapsulates and one

Wavelength conversion substance contains.

According to a further embodiment, the first spectrum has at least one spectral component from an ultraviolet to infrared wavelength range. Preferably, the first spectrum comprises a visible wavelength range. This may mean, in particular, that the semiconductor chip emits visible light during operation. Here, "visible"

especially perceptible to the human eye

Observers and include a wavelength range of about 380 nm to about 800 nm. The first spectrum preferably comprises a blue to green wavelength range and particularly preferably a blue wavelength range. It may be particularly advantageous if the of the

Filter layer reflected part of the outside of the

Semiconductor device incident light at least partially converted by the wavelength conversion element Partial spectrum of the light corresponds to the first spectrum. This may in particular also mean that the spectrum of the part of the light incident on the semiconductor component from the outside of the filter layer comprises or agrees with the said partial spectrum.

Therefore, it may also be possible for the filter layer to at least partially cover the part of the light that is not from the

Wavelength conversion element in light with the second

Spectrum is converted, in the direction of

Wavelength conversion element reflected back. For this reflected back light, in turn, the possibility may exist, at least partially from

Wavelength conversion element to be converted.

In particular, the filter layer may therefore also be suitable for the part of the partial spectrum of the light with the first

Spectrum to be converted by the wavelength conversion element. In particular, it may be advantageous if the filter layer is transparent to at least a portion of the light with the first spectrum, so that this part can be emitted from the semiconductor device.

In addition, the spectrum of the portion of the filter layer reflected from the outside to the

Semiconductor device incident light, for example, further spectral components of the absorption spectrum of the wavelength conversion element or the

Include or match the absorption spectrum.

In a particularly preferred embodiment, the first spectrum has a blue wavelength range and the second spectrum has a yellow wavelength range. The part of the light with the first spectrum of the Wavelength conversion element in light with the second

Spectrum is converted, it may preferably be selected such that the semiconductor device awakens in operation a white light impression in a viewer, in which case also a further part of the light with the first

Spectrum can be emitted from the semiconductor device. In particular, a correspondingly suitable

Wavelength conversion element in a viewer in the off state of the semiconductor device with a light from the outside to the semiconductor device incident light a yellowish color impression. Therefore, the

Filter layer just be suitable, a part of the outside of the light emitting surface of the semiconductor device

to reflect incident light in such a way that the

Light emission of the semiconductor device in an off state in a viewer a non-yellowish color impression but, for example, a white color impression awakens. This may be possible because the filter layer can at least partially reflect a blue spectral range of the light incident on the semiconductor component from the outside.

In particular, the features described and

Embodiments may be advantageous for applications in which the light-emitting semiconductor component is approximately as

Flash is used, such as in mobile phone applications with camera. By way of example, the semiconductor component may have at least one blue light-emitting semiconductor chip to which a yellow-converting one

Subsequent wavelength conversion substance is arranged. It may be that the wavelength conversion substance by a

transparent cover or a lens that the

Can form light emitting surface of the semiconductor device, is visible from the outside when the light emitting

Semiconductor device is not in operation, what without the filter layer to an example of aesthetic

Causes unwanted color impression would result. Although such an undesirable color impression could possibly also be reduced by Fresnel optics or microlens arrays, such solutions usually remain

received disturbing color impression.

In addition to a reduction of an undesirable,

especially yellow, color impression of

Wavelength conversion element in an off state, the filter layer, which reflects a certain proportion of ambient light as well as the light emitted from the semiconductor chip in operation light, in particular blue light, are used for subsequent adaptation of the color locus of the emitted light from the semiconductor device in operation light. This may be possible in particular if the original color location, which results from the light emitted by the light-emitting semiconductor chip and the light converted by the wavelength conversion element, undesirably in the direction of the first

Spectrum of the light emitted by the semiconductor chip

is moved. For a blue emitting semiconductor chip and a yellow converting

Wavelength conversion element, this is the case when the radiated from the semiconductor device color locus in

undesirable way to blue and thus shifted to colder light. The filter layer may be formed such that a desired part of the through the

Radiated wavelength conversion element

unconverted light with the first spectrum is reflected back into the wavelength conversion element. This increases the conversion probability for this light and the color location of the light emitted by the semiconductor component shifts in the direction of the second spectrum, in the case of a yellow-converting

Wavelength conversion element thus in the direction of yellow or in the direction of warm white light.

Alternatively or additionally, the first spectrum

for example, a green wavelength range

have and the second spectrum a red

Wavelength range, so that the semiconductor device in operation also a white light impression at a

Viewer can allow. In particular, the first spectrum, the second spectrum, the partial spectrum and the part of the light incident on the semiconductor component from the filter layer can also be selected according to another desired color impression in each case during operation and in the switched-off state of the semiconductor component.

In a further embodiment, the semiconductor chip has a semiconductor layer sequence which is referred to as

Epitaxial layer sequence, ie epitaxially grown

Semiconductor layer sequence, is executed. In this case, the semiconductor layer sequence can be embodied, for example, on the basis of an inorganic material, for example InGaAlN. Fall under InGaAlN-based semiconductor layer sequences

in particular those in which the epitaxially produced semiconductor layer sequence, which is usually a

Layer sequence of different individual layers

comprising at least one single layer comprising a material of the III-V compound semiconductor material system In _x Al _y Gai _x - _y N with 0 <x <1, 0 <y <1 and x + y <1. Alternatively or additionally, the semiconductor layer sequence can also be based on InGaAlP, that is to say that the

Semiconductor layer sequence has different individual layers, of which at least one single layer of a material of the III-V compound semiconductor material system In _x Al _y Gai- _x - _y P with 0 <x <1, 0 <y <1 and x + y <1. Alternatively or additionally, the semiconductor layer sequence may also comprise other II IV compound semiconductor material systems, for example an AlGaAs-based material, or II-VI material.

Have compound semiconductor material systems.

The semiconductor layer sequence can be used as active region

for example, a conventional pn junction, a

Double heterostructure, a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure) have. The semiconductor layer sequence may comprise, in addition to the active region, further functional layers and functional regions, for example p-doped or n-doped ones

Charge carrier transport layers, ie electron or

Hole transport layers, p- or n-doped confinement or cladding layers, buffer layers and / or electrodes and combinations thereof. Such structures include the active region or the further functional layers and

Areas relating to those skilled in particular

in terms of structure, function and structure known and are therefore not explained in detail here.

The semiconductor chip can furthermore have a substrate on which the semiconductor layer sequence has grown or onto which the semiconductor layer sequence has been transferred after being grown on a growth substrate. For example, the semiconductor chip may be formed as a thin-film semiconductor chip. A thin-film semiconductor chip can be characterized in particular by the following characteristic

Characteristics distinguish:

on a first main surface of a light-generating one facing towards a carrier substrate

Semiconductor layer sequence is applied or formed a reflective layer, which reflects back at least a part of the light generated in the semiconductor layer sequence in this;

the semiconductor layer sequence has a thickness in the range of 20 μm or less, in particular in the range of 10 μm; and

the semiconductor layer sequence contains at least one semiconductor layer with at least one surface which has a

Has mixing structure that ideally to an approximately ergodic distribution of light in the

epitaxial epitaxial layer sequence, i. it has as ergodically stochastic scattering behavior as possible.

A basic principle of a thin-film semiconductor chip is described, for example, in the publication I. Schnitzer et al. , Appl. Phys. Lett. 63 (16), 18 October 1993, 2174-2176

The disclosure of which is hereby incorporated in full in this regard by reference.

Furthermore, it may also be possible that the semiconductor chip has a different structure and is designed, for example, as a flip-chip or volume emitter known to the person skilled in the art. Furthermore, it is also possible for the semiconductor chip to be formed as an organic semiconductor chip, in particular as an organic light-emitting diode. According to a further embodiment, the

Wavelength conversion element at least one

Wavelength conversion substance on. Of the

Wavelength conversion substance can be, for example

In particular, cerium-doped yttrium aluminum garnets (Y ₃ Al ₅ O ₁₂ : Ce, YAG: Ce), cerium-doped terbiumaluminum garnet (TAG: Ce), cerium-doped terbium-yttrium aluminum garnet have particles from the group of cerium-doped garnets

(TbYAG: Ce), cerium-doped gadolinium-yttrium aluminum granule (GdYAG: Ce) and cerium-doped gadolinium-terbium-yttrium aluminum garnet (GdTbYAG: Ce). Other possible

Wavelength conversion materials can be, for example, the following:

- Garnets of rare earths and alkaline earth metals, such as in US 2004/062699 AI

described, the disclosure of which is hereby incorporated by reference,

- Nitrides, Sione and Sialone, as described for example in the document DE 10147040 AI, whose

Disclosure in this regard is taken by reference,

- Orthosilicates, sulfides, and vanadates as described for example in the document WO 00/33390 AI, whose

Disclosure in this regard is taken by reference,

Chlorosilicates, as described, for example, in the publication DE 10036940 A1, the disclosure of which is incorporated herein by reference, and

- Aluminates, oxides, halophosphates, as described for example in the document US 6,616,862 B2, whose

Disclosure in this respect is taken by reference. Furthermore, the wavelength conversion element also suitable mixtures and combinations of the above

Wavelength conversion substances include. Furthermore, the wavelength conversion element can be

transparent matrix material, wherein the

Wavelength conversion substance in the matrix material

embedded or chemically bound to it. The transparent matrix material may, for example, a

transparent plastic, such as silicones, epoxies, acrylates, imides, carbonates, olefins or derivatives thereof. The wavelength conversion element can be designed, for example, as a self-supporting foil. In addition, the wavelength conversion element may also have a light-transmissive carrier element, such as glass or a transparent plastic in the form of a

Plate, a film, a cover, a shell or a window and on which the

Wavelength conversion substance is applied.

Furthermore, the wavelength conversion element may be formed as a ceramic wavelength conversion element, which consists of one or more of the above

Wavelength conversion materials is formed or has one or more of these in a ceramic matrix material. A ceramic wavelength conversion element can

in particular self-supporting, for example as a ceramic plate or ceramic plate, be formed and have a planar or curved shape in the form of a disc or cover. According to a further embodiment, the filter layer is formed as a dichroic mirror. In particular, the filter layer may have a periodic sequence of first and second layers for this purpose. For this purpose, the layers may comprise dielectric materials, such as oxides, nitrides and / or sulfides. The first layers may have a first refractive index and the second layers a second refractive index, the first refractive index being different from the second refractive index. For example, the first layers may have a lower refractive index than the second layers and may include silicon dioxide. The second layers can continue to

Have higher refractive index material, such as

Titanium dioxide, zirconium dioxide or tantalum pentoxide. Other suitable materials may include alumina or

Be silicon nitride. The thicknesses of the first and second

For example, layers may have about one quarter of the wavelength of a spectral component to be reflected. In particular, "thickness" may mean the optical path length of light in a first or second layer The thicknesses of different first layers or of different second layers may be the same Here, alternatively or additionally, thicknesses of different first layers or of different second layers may be different Depending on the degree of reflectivity of the filter layer to be achieved, it may comprise one or more pairs of first and second layers In another embodiment, the filter layer may have a major surface, where the major surface of the filter layer may be the surface of the filter layer that faces the semiconductor chip and the wavelength conversion element turned away. This main surface may be, for example, the light emitting surface of the semiconductor device. The light incident on the semiconductor device from the outside can, for example, make an angle with the main surface

lock in. It may be the case that the part of the light incident on the semiconductor component from the outside is reflected by the filter layer in an angle-dependent manner.

For example, the filter layer may comprise a substrate comprising glass or plastic. In addition, the filter layer on the wavelength conversion element

be applied, for example in the form of a coating or by means of an adhesive layer. In particular, it may be advantageous for this purpose if the wavelength conversion element is designed to be self-supporting, for example as a foil or plate in a planar or curved form. Alternatively or additionally, the wavelength conversion element

Be part of a layer arrangement, the one

Carrier element with two facing away from each other

Main surfaces, wherein on the one main surface, a wavelength conversion substance as

Wavelength conversion element may be applied and on the other main surface of the filter layer. Furthermore, the filter layer spatially separated from

Wavelength conversion element is arranged.

According to a further embodiment, the

Semiconductor device on an optical component, which is the

Filter layer in the beam path of the emitted light

is subordinate. For example, the filter layer can be arranged on the optical component. An optical component can, for example, be a scattering, focusing, be collimating or diffractive optical component, for example, a lens or a lens system, a

Cover, a diffuser or a microprism structure or a combination thereof. Furthermore, the optical component can be spatially separated from the wavelength conversion element

be arranged.

Further advantages and advantageous embodiments and developments of the objects according to the invention will become apparent from the embodiments described below in conjunction with the figures.

Show it:

Figures 1A and 1B are schematic representations of a light

emitting semiconductor device according to a

Embodiment in operation and in the off state,

Figure 2 is a schematic representation of a light

emitting semiconductor device according to another

Embodiment,

Figure 3 is a schematic representation of a light

emitting semiconductor device according to another

Embodiment,

Figure 4 is a schematic representation of a light

emitting semiconductor device according to another

Embodiment 1 and

Figure 5 is a schematic representation of a light

emitting semiconductor device according to another

Embodiment.

In the embodiments and figures are the same or equivalent components each with the same Provided with reference numerals. The illustrated elements and their proportions with each other are basically not to be regarded as true to scale, but individual elements, such as layers, for exaggerated representability and / or for better understanding can be shown exaggerated thick.

FIGS. 1A and 1B show an exemplary embodiment of a light-emitting semiconductor component 100. In this case, the light-emitting semiconductor component 100 in FIG. 1A is in operation, ie a switched-on, light

emitting state, shown while the light

emitting semiconductor device 100 in FIG. 1B in FIG

turned off state is shown. The following

Description, unless expressly stated otherwise, refers equally to FIGS. 1A and 1B.

The light-emitting semiconductor device 100 has a light-emitting semiconductor chip 1 having an active

Area 11 on. The semiconductor chip 1 can, as explained in the general part of the description a

Semiconductor layer sequence on a substrate. As described above in the general part, the semiconductor layer sequence may have functional layers or layer sequences and may in particular comprise one or more of the compound semiconductor materials mentioned or may also be embodied as an organic light-emitting semiconductor chip. In particular, the active region 11 of the semiconductor chip 1 is suitable for emitting light 31 with a first spectrum during operation, as indicated in FIG. 1A. In the beam path of the light 31 with the first spectrum, a wavelength conversion element 2 is arranged, which has a

Wavelength conversion substance 22 has. As indicated in the embodiment shown, the

Wavelength conversion substance 22, for example in one

Embedded matrix material 21. The

Wavelength conversion element 2 may be formed, for example, as a self-supporting film. Furthermore, it may also be possible that the wavelength conversion element 2 as a ceramic wavelength conversion element, ie

for example, as a ceramic plate is formed, which has a ceramic wavelength conversion substance 22 in a ceramic matrix material 21. Alternatively, the wavelength conversion element 2

for example, only by a ceramic

Wavelength conversion substance 22 may be formed.

The wavelength conversion substance 22 is suitable, at least partially, a partial spectrum of the light 31 with the first

Spectrum into light 32 with a second spectrum. Suitable for the wavelength conversion substance 22 may be in particular materials that a

Have absorption spectrum containing at least one spectral component, in particular a wavelength range, which is also included in the first spectrum. The

absorbed light may then preferably be emitted at a different wavelength than the light 31 with the first spectrum from the wavelength conversion substance 22. The wavelength conversion element 2 is placed away from the light-emitting semiconductor chip 1. As in the above

described general part, this means in particular that the wavelength conversion element 2 a distance from the Semiconductor chip 1, so that the

Wavelength conversion element 2 no coating or directly glued or laminated on the layer

Semiconductor chip 1 forms, but spatially separated and not directly on or near the semiconductor chip 1 is arranged. In particular, the light-emitting semiconductor chip 1 may have a lateral extent which, for example, corresponds to an edge length of the semiconductor chip 1 in a direction parallel to the main extension plane of the layers of the semiconductor chip 1

Semiconductor chips 1 and perpendicular to a growth and

Arranging direction of the layers of the semiconductor chip 1 corresponds. The wavelength conversion element 2 is

preferably arranged at a distance from the semiconductor chip 1, a multiple, in particular at least one

Twice, at least three times or at least a fivefold, the lateral extent of the semiconductor chip 1 corresponds. The lateral extent of the

Wavelength conversion element 2, ie the extension of the wavelength conversion element 2 along its

Main extension directions, in particular may be greater than the lateral extent of the semiconductor chip 1, at least for the most part or even completely in the beam path of the

Usually emitted in a wide angular range of light 31 to be arranged with the first spectrum.

In the optical path of the light 31 with the first spectrum and the light 32 with the second spectrum is above the

Wavelength conversion element 2 is a filter layer 3

arranged. The filter layer 3 can during operation as in the off state of the light-emitting

Semiconductor device 100 may be adapted to reflect a portion 34 of an incident on the outside of the semiconductor light-emitting device 100 light 33, as in Figure 1B is indicated. In particular, the light 33 incident from outside on the light-emitting semiconductor component 100 can be irradiated onto a main surface 4 of the filter layer 3 facing away from the wavelength conversion element 2. The main surface 4 may, for example, the

Light emitting surface of the light emitting

Semiconductor device 100 form.

In particular, the filter layer 3 may be a periodic one

Sequence of first and second layers of dielectric materials, wherein the first layers have a first refractive index and the second layers have a second refractive index and the first and the second

Refractive index are different from each other, as stated above in the general part.

Weitehrin the filter layer 3 may also be suitable, at least a portion 312 of the light 31 with the first

Reflect spectrum. The of the filter layer. 3

Reflected portion 312 of the light 31 with the first spectrum can preferably be reflected back into the wavelength conversion element 2 and there from the

Wavelength conversion substance 21 are converted into light 32 with the second spectrum.

An arrangement of the filter layer 3 directly or at least close to the wavelength conversion element 2 can

be advantageous, in particular in terms of a compact design of the light-emitting semiconductor device 100 and in terms of a homogeneous color impression of the light-emitting semiconductor device 100 both in operation and in the off state. The color impression of the light-emitting semiconductor component 100 awakened in a viewer during operation results from the light emitted by the light-emitting surface. This can in particular a superimposition of the part 311 of the light 31 with the first spectrum, the light

emitting semiconductor device 100 unconverted

and the light 32 having the second spectrum emitted from the wavelength conversion element 2 may be. In particular, the allowed color impression depends on the relative intensities of the portion 311 of the light 31 with the first spectrum and the light 32 with the second spectrum.

In an off state of the semiconductor light-emitting device 100 as shown in FIG. 1B, no light 31 having the first spectrum is generated in the active layer 11 of the semiconductor chip 1. Nevertheless, it may be possible for the light-emitting semiconductor component 100 to produce a color impression in a viewer, in particular when viewing the light-emitting surface. This may be possible because at least part of the light 33 incident from outside on the light-emitting semiconductor component 100 can be reflected at the wavelength conversion element 2, the filter layer 3 and / or the semiconductor chip 1. As indicated in FIG. 1B, at least part of the light 33 having a spectrum corresponding to the absorption spectrum of the wavelength conversion element 2 in the wavelength conversion element 2 is converted into light 32 having the second spectrum and can be radiated to the outside as converted light 32. This can lead to a color impression of the wavelength conversion element 2 in a switched-off state of the light-emitting

Semiconductor device 100 lead, which is not desirable. As described above, the filter layer 3 is capable of forming a part 34 of the outside emitting light

Semiconductor device 100 of incident light 33 to

reflect. In particular, the spectrum of the part 34 may be selected such that by superimposing the part 34 with the light 32 converted by the wavelength conversion element 2, the undesired color impression caused by the light

Wavelength conversion element 2 can be caused alone, can be avoided. In particular, the

Filter layer 3 may be formed so that the portion 34 of the light emitted from the outside of the light-emitting semiconductor device 100 light 33, which is reflected, a spectrum having one or more spectral components

contains in the absorption spectrum of the

Wavelength conversion substance 22 are included. In particular, such spectral components may also be contained in the first spectrum of the light 31 generated by the active region 11 of the semiconductor chip 1 during operation.

Furthermore, it may also be advantageous if the part 34 of the outside of the light-emitting semiconductor device 100 incident light 33 which is reflected from that of the filter layer 3, as well as the part 312 of the light 31 with the first spectrum of the Filter layer 3 is reflected, that is, the reflectance of the filter layer 3, depending on the angle 9 between the main surface 4 of the filter layer 3 and the direction from which the respective light is irradiated to the filter layer 3. For example, it may be advantageous if the reflectance is smaller for small angles 9, so that under small

Angle 9 incident on the filter layer 3 light 31 with the first spectrum or from the outside to the light emitting semiconductor device 100 at small angles 9 on the filter layer 3 incident light 33 rather

is transmitted as at larger angles such as at normal incidence.

By way of example only, in the exemplary embodiment shown, the light 31 with the first spectrum has, for example, spectral components in a blue wavelength range. The wavelength conversion substance 22 of the

Wavelength conversion element 2 may be suitable

at least a portion of the light 31 with the first spectrum, in particular spectral components of the blue

Wavelength range, in light 32 with a second spectrum in a yellow wavelength range to convert. As a result, the light emitting surface of the light emitting

Semiconductor device 100 emitted light, which in a viewer, for example, a white color impression

allows. In the off state, the

Wavelength conversion element 2 alone in externally incident light 33, for example, solar radiation or daylight-like room lighting, thus a yellowish color impression awaken, which may be undesirable. The filter layer 3 may therefore be suitable, in particular a part 34 of the light emitting from the outside

Semiconductor device 100 incident light 33 with

To reflect spectral components in a blue wavelength range, so that in turn, by a superposition of the yellowish color impression of the viewer

Wavelength conversion element 2 and the bluish

Color impression of the filter layer 3 a whitish color impression the light emitting surface of the light emitting

Semiconductor device 100 can be awakened.

For example, it may be possible that the filter layer 3 also includes at least a portion, for example 50%, of the light 31 with the first spectrum in the direction of the light source 31

Wavelength conversion element 2 is reflected back. Due to the wavelength-dependent perception of the human eye, that is, by the photometric weighting, it may be possible that a reduction of the light

emitting semiconductor device 100 of emitted light 31 having the first spectrum in the blue wavelength range even by 100% by reflection at the filter layer 3 and a conversion to light 32 having the second spectrum in FIG

Wavelength conversion element 2, the perceived brightness is reduced by only about 3%.

The light-emitting semiconductor device 100 may

For example, be suitable as a component for a flash for a mobile phone application with camera. Furthermore, the light-emitting semiconductor device 100 may also be suitable for illumination devices.

In the following, further embodiments will be described, whose principle operation of the

Embodiment corresponds to the figures 1A and 1B.

FIG. 2 shows a light-emitting semiconductor component 101 according to a further exemplary embodiment, which has a light-emitting semiconductor chip 1 on a semiconductor substrate

Housing trained carrier 6 has. The carrier 6 has a lead frame 60 on which the semiconductor chip 1 is mounted or electrically connected. The ladder frame 60 is formed with a plastic material 61, which is the

Housing body forms and having a recess in which the semiconductor chip 1 is arranged. The carrier 6 may be formed, for example, as a so-called "premold package".

About the recess of the housing 6 formed as a carrier 6, the wavelength conversion element 2 and

Filter layer 3 is formed as a cover of the carrier 6 and form a window and thus the light emitting surface of the light-emitting semiconductor device 101st

The wavelength conversion element 2 is, as in

Compound is described with reference to Figures 1A and 1B, placed away from the semiconductor chip 1 and thus from

Semiconductor chip 1 arranged spatially spaced. Of the

Space between the semiconductor chip 1 and the

Wavelength conversion element 2 in the recess of

For example, support 6 may be free of material or filled with a gas, such as air, or an inert gas. Furthermore, it may also be possible that the carrier 6 in the recess has a further plastic material in the form of a potting for the semiconductor chip 1, for example a silicone. The potting is transparent and has no wavelength conversion substance.

FIG. 3 shows a light-emitting semiconductor component 102 according to a further exemplary embodiment, in which, in comparison with the exemplary embodiment of FIG

Wavelength conversion element 2 and the filter layer 3 are arranged separately from each other. In particular, the wavelength conversion element 2 is within the recess of the Carrier 6 placed away from the semiconductor chip 1. The

Wavelength conversion element is between the

Semiconductor chip and the filter layer arranged. Furthermore, the wavelength conversion element is both of the

Semiconductor chip and spatially spaced from the filter layer. The wavelength conversion element 2, for example, within a casting for the

light emitting semiconductor chip 1 may be formed, for example in the form of a wavelength conversion layer, which is spaced apart by introducing a wavelength conversion substance and spatially separated from the semiconductor chip 1. The potting material can in this case also the

Matrix material for the wavelength conversion substance of the

Wavelength conversion element 2 form. Alternatively, it is also possible that the wavelength conversion element 2 is formed self-supporting and is introduced, for example in the form of a film or a ceramic plate into the recess 6 of the carrier. The filter layer 3 forms a cover of the carrier 6 and can, for example, as a Bragg reflector on a

Support element may be formed.

Alternatively to the provided with a recess formed as a housing supports 6 of the embodiments of the figures

2 and 3, the carrier 6 may also have a housing which encloses the semiconductor chip on all sides, wherein the filter layer

3 and the wavelength conversion element 2 on a

Outside of the carrier 6 according to the embodiment of Figure 2 or at least partially within the housing according to the embodiment of Figure 3 can be arranged. FIG. 4 shows a light-emitting semiconductor component

103 according to a further embodiment, which has a carrier 6, which is formed by a ceramic substrate 62, on which a transparent plastic material 63 for encapsulating the on the ceramic substrate 62 in comparison to the two previous embodiments

applied semiconductor chips 1 is arranged. The

Ceramic substrate 2 may be printed conductors and / or

Having vias for electrical connection of the light-emitting semiconductor chip 1.

The wavelength conversion element 2 and the filter layer 3 are on an outer side of the carrier 6, which by a

Outside of the plastic material 63 is formed,

applied. Alternatively to the arrangement of

Wavelength conversion element 2 and the filter layer 3 on only one surface of the support 6, this can also on several surfaces of the support 6 and in particular the

Be applied plastic material 63, so in addition to the top shown on side surfaces of the

Plastic material 63.

FIG. 5 shows a light-emitting semiconductor component

104 according to a further embodiment, which has a carrier 6, for example a plastic substrate or a ceramic substrate, on which a light-emitting semiconductor chip 1 is arranged and electrically contacted. Spaced apart and thus placed away from the semiconductor chip 1, the light-emitting semiconductor component 104 has a shell-shaped carrier element 5, for example in the form of a glass dome or a plastic dome, which is pure

by way of example on a semiconductor chip 1 facing

Inside of the wavelength conversion element 2, for example in the form of a coating with a wavelength conversion substance, and on one outer side the filter layer 3. Between the carrier 6 and the

Wavelength conversion element 2 is a cavity

formed, which may be empty or filled with a gas. Furthermore, it is also possible that in the

Cavity a potting material is arranged. As an alternative to the exemplary embodiment shown, it may also be possible for the wavelength conversion element 2 to be designed to be self-supporting without the carrier element 5, made of a plastic or ceramic material having a wavelength conversion substance, and

dome-like over the semiconductor chip 1 is arranged.

The exemplary embodiments shown in the figures show all light-emitting semiconductor components which have a

Wavelength conversion element 2 according to a so-called "remote phosphor concept", which is placed away from a light-emitting semiconductor chip 1. The

Wavelength conversion element 2 is as above

described for example as a disk, shell or cover executed. In the switched-off state of the light-emitting semiconductor components shown, an undesired, for example, yellow color impression of the

To avoid wavelength conversion element 2, which can be perceived as disturbing, is in each case directly on the wavelength conversion element 2 or spaced therefrom a filter layer 3 is arranged, the at least one part 34 of an externally to the light-emitting

Semiconductor devices incident light 33 reflects to superimpose a wavelength of the conversion element 2 caused color effect in the off state of the semiconductor devices and thus to modify.

Known measures such as a white diffuser to use as a cover over the wavelength conversion element 2, to a disturbing color impression of the

Wavelength conversion element 2 to avoid, are not necessary in the light-emitting semiconductor devices described here, so that with such additional

Diffusers associated disadvantages such as a significant loss of light can be avoided.

According to further embodiments, features of the embodiments described in connection with the figures may be combined with each other, even if such combinations are not explicitly described in connection with the figures. Furthermore, the embodiments described in connection with FIGS additional or

alternative features according to the embodiments in

general part.

The invention is not limited by the description based on the embodiments of these. Rather, the invention includes every new feature as well as any combination of

Features, which includes in particular any combination of features in the claims, even if this feature or this combination itself is not explicitly in the

Claims or embodiments is given.

This patent application claims the priority of German patent applications 10 2012 109 109.9 and 10 2012 111 123.5, the disclosure of which is hereby incorporated by reference.

Claims

claims

1. A light emitting semiconductor device comprising

a light emitting semiconductor chip (1) having a

active region (11), which in operation emits light (31) with a first spectrum,

a wavelength conversion element (2) remote from

Semiconductor chip (1) placed and the semiconductor chip (1) in the beam path of the light (31) with the first spectrum is arranged and the at least partially converts light (31) with the first spectrum in light (32) with a second spectrum, and

a filter layer (3) which reflects at least a part (34) of a light (33) incident on the semiconductor component from the outside, that of the filter layer

(3) reflected part (34) of the outside of the

Semiconductor device incident light (33) has a visible wavelength range and in an off state of the semiconductor device caused by the wavelength conversion element

Superimposed color impression.

2. A semiconductor device according to claim 1, wherein the

Wavelength conversion element (2) of the filter layer (3) spatially objected is arranged.

3. A semiconductor device according to claim 1 or 2, comprising a housing formed as a carrier (6), wherein

- The housing has a recess,

- The semiconductor chip (1) and the ^{Wellenlängenkonversions ¬} element (2) are arranged within the recess, and

- The filter layer (3) over the recess as a

Cover of the carrier is arranged. Semiconductor component according to one of claims 1 to 3, wherein the wavelength conversion element (2) has a

Distance from the semiconductor chip (1), the one

Multiples of a lateral extent of the

Semiconductor chips (1) corresponds.

Semiconductor component according to one of Claims 1 to 4, the semiconductor component having a carrier (6).

on which the semiconductor chip (1) is arranged and which carries the wavelength conversion element (2) arranged remotely from the semiconductor chip (1).

A semiconductor device according to claim 5, wherein said

Wavelength conversion element (2) or the

Wavelength conversion element (2) and the filter layer (3) as a cover, window or shell over the

Semiconductor chip (1) are formed.

Semiconductor device according to one of the previous

Claims, wherein the filter layer (3) the

Wavelength conversion element (2) in the beam path of the light (31) is arranged downstream of the first spectrum.

Semiconductor component according to the preceding claim, wherein the semiconductor component is one of the filter layer (3).

Subordinate Lichtabstrahlfläche (4) and the incident from the outside of the semiconductor device

Light (33) is irradiated on the light emitting surface (4). Semiconductor device according to one of the previous

Claims, wherein the first spectrum is a sichtb

Has wavelength range. 10. Semiconductor device according to one of the preceding

Claims, wherein the of the filter layer (3)

reflected part (34) of the outside on the

Semiconductor device incident light (33) at least partially corresponds to the wavelength conversion element (2) converted partial spectrum of the light (31) with the first spectrum.

Semiconductor device according to one of the previous

Claims wherein the filter layer (3) is transparent to a portion of the light (31) having the first spectrum.

12. Semiconductor device according to one of the preceding

Claims, wherein

the first spectrum has a blue wavelength range and the second spectrum has a yellow wavelength range

having,

the semiconductor component one of the filter layer (3)

has downstream Lichtabstrahlfläche (4) and

- The light emitting surface (4) in a switched off

State in a viewer a non-yellowish

Color impression awakened.

Semiconductor device according to one of the previous

Claims, wherein the wavelength conversion element as a ceramic wavelength conversion element

is trained.

14. Semiconductor device according to one of the preceding

Claims, wherein the wavelength conversion element (2) comprises a wavelength conversion substance (22) in one

Matrix material (21) and the matrix material (21) comprises a transparent plastic.

15. Semiconductor component according to the preceding claim, wherein the wavelength conversion element (2) as

self-supporting film is formed.

16. Semiconductor device according to one of the preceding

Claims, wherein the wavelength conversion element (2) has a carrier element (5) on which a

Wavelength conversion substance is applied, and the carrier element (5) comprises glass or plastic.

17. Semiconductor device according to one of the preceding

Claims, wherein

- The filter layer (3) as a dichroic mirror

is formed, which has a periodic sequence of first layers and second layers,

the first layers have a first refractive index and the second layers have a second refractive index different from the first refractive index, and

the first layers and the second layers of the

Filter layer (3) each comprise an oxide or nitride.

18. Semiconductor device according to one of the preceding

Claims, wherein the filter layer (3) on the

Wavelength conversion element (2) is applied.

19. Semiconductor device according to one of the preceding

Claims, wherein - The filter layer (3) at least one the

Wavelength conversion element (2) facing away

Main surface (4),

- The light incident from the outside on the semiconductor device light (33) at an angle (9) on the

Main surface (4) is irradiated, and

the part (34) of the light (33) incident from outside on the semiconductor component is reflected by the filter layer (3) as a function of this angle.