EP2901214A1 - Illuminateur de dispositif de photolithographie permettant la diffraction controlee - Google Patents
Illuminateur de dispositif de photolithographie permettant la diffraction controleeInfo
- Publication number
- EP2901214A1 EP2901214A1 EP13766352.2A EP13766352A EP2901214A1 EP 2901214 A1 EP2901214 A1 EP 2901214A1 EP 13766352 A EP13766352 A EP 13766352A EP 2901214 A1 EP2901214 A1 EP 2901214A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- diaphragms
- illuminator
- shutter
- plane
- condenser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0961—Lens arrays
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
Definitions
- the present invention relates to an illuminator of a photolithography device, and such a photolithography device.
- Photolithography is a technique used for the fabrication of semiconductor devices, using electromagnetic radiation to generate fine patterns on semiconductor devices.
- an illuminator of a photolithography device illuminates a mask whose image is projected onto a semiconductor wafer (also known as the "wafer").
- a known illuminator generally comprises a diffractive optical element 1 (also called a "diffractive optical element” or DOE) which is illuminated by a source 1 'of illumination.
- a diffractive optical element 1 also called a "diffractive optical element” or DOE
- the source 1 'of illumination is for example a laser source.
- the element 1 can be any element generally used to produce diffraction, such as for example a two-dimensional matrix of spherical microlenses, a Fresnel lens, a diffraction grating, etc.
- the element acts as an optical diffuser and its main function is to produce at its output a pupil of general pattern wanted, for example in the form of disk or ring.
- the illuminator comprises at the output of the element 1 a zoom 2 formed of several lenses.
- the function of the zoom 2 is to bring the image of the exit pupil of the element 1 to a finite distance and to be able to vary it in dimension.
- a matrix L1 of micro-lenses consisting of a flat blade comprising two faces facing one another, and on each face being formed an array of spherical or cylindrical microlenses.
- the matrix L1 of microlenses breaks down the incident beam, at the exit of zoom 2, into a multitude of sub-beams. In other words, the exit pupil of the matrix L1 is decomposed into sub-exit pupils.
- a second L2 matrix of microlenses is disposed downstream of the first L1, so that the L1 L2 system is afocal.
- a third L3 matrix of microlenses is disposed downstream of the second L2.
- a shutter 3 consisting of a plate or a grid in which openings are provided at regular intervals.
- the shutter 3 may comprise two plates 31, 32 displaced in synchronism with the movements of the mask 7 and w slice to be illuminated in a direction orthogonal to the optical axis, or two directions orthogonal to the optical axis and where appropriate between them.
- the shutter 3 makes it possible to control the dose, the image format, and the illumination profile on the mask 7. It is in this respect positioned in a conjugate plane of the focal plane of a condenser 5, the mask 7 being disposed slightly downstream thereof. This makes it possible to prevent light from being transmitted outside the desired field, generating stray light on the wafer during illumination.
- the fact that the mask is slightly defocused with respect to the focal plane of the condenser makes it possible to improve the control of the dose by smoothing temporal variations of energies of the light pulses.
- the network system L1 L2 upstream of the shutter 3 is afocal makes it possible to limit the size of the sub-pupil output of the system illuminating the shutter.
- the image focal point of the third L3 matrix of microlenses is located at the object focus of a condenser 5, in order to make the illuminator telecentric, that is to say so that the exit pupil of the illuminator is at the infinite.
- the condenser 5, meanwhile, comprises a plurality of lenses for superimposing at the mask sub-beams from matrices L1 L2.
- An apodization device 6 is also placed between the condenser 5 and the mask 7.
- the shutter 3 is positioned in a conjugate plane of the focal plane of the condenser to ensure a clear closure of the light beam 10.
- Such an illuminator provides in particular good results for the light beam in one dimension, i.e. when the shutter of the light beam must be made along a first axis in the plane of the shutter.
- the telecentricity condition of the illuminator requires the shutter 3 to be positioned at the object focus of the microlens matrix L3 in the directions of the two shutter axes.
- the condition of sharpness of the image of the shutter on the mask requires that the image focus of the microlens matrix L3 is positioned at the object focus of the condenser in both directions.
- microlens matrix L3 have the same focal length in both directions.
- focal length of the microlenses being of the same order of magnitude as the thickness of said microlenses, it is geometrically impossible to ensure obtaining this result, and thus to ensure perfect conjugation between the microlenses. shutter and mask in both directions.
- the shutter causes a diffraction phenomenon which makes it difficult to obtain a clear image of the shutter in the plane of the condenser, and therefore on the mask. More particularly, the diffraction of the light by the grid diffuses the light beam in an opening greater than the opening of the sub-beams from the microlens matrices L1 L2. This results in two negative consequences:
- the light coming from the shutter may not pass through the good microlens of the matrix L3, creating crosstalk between the sub-beams 100 and interference phenomena on the mask.
- the diffraction by the shutter leads to increase the opening of the sub-beams at the input of the third matrix of microlenses L3.
- a larger aperture limits the object depth of field of the microlens matrix L3, which increases the sensitivity to a defocusing of the shutter with respect to the object focal plane of this matrix L3. The setting of the illuminator is thus made more complex.
- the invention proposes to overcome at least one of the above problems.
- a photolithographic device illuminator comprising:
- an optical system for homogenization comprising at least one microlens array, said system being disposed upstream of the condenser, and
- the illuminator further comprising a network of aperture diaphragms disposed in the plane of the Fourier transform, or Fourier plane, of the plane of the shutter.
- the invention is further supplemented by at least one of the following features:
- the aperture diameters of the diaphragms and the coherence factors of the light rays passing through said diaphragms vary from one diaphragm to another.
- the aperture diameters of the diaphragms and the coherence factors of the light rays are variable between two adjacent diaphragms, the distribution of the aperture diameters of the diaphragms is random, the variations of the aperture diameters from one diaphragm to the other are between 0 and 50%, and preferably between 0 and 30%.
- the image focal plane of the homogenization optical system is disposed at the object focal plane of the condenser.
- the invention further relates to a photolithography device comprising a mask and an illuminator according to the invention, wherein the shutter of the illuminator is positioned in a conjugate plane of the image focal plane of the condenser.
- the invention has many advantages.
- An illuminator according to the invention fulfills the conditions of conjugation between the shutter and the mask to be illuminated both in a first direction orthogonal to the optical axis, but also in a second direction orthogonal to the optical axis, and preferably orthogonal to the first.
- an illuminator according to the invention makes it possible to control the effect of the diffraction related to the shutter so as to increase the sharpness of the image of the shutter on the mask.
- the control of the opening also makes it possible to make the third microlens matrix L3 less sensitive to a defocusing of the grid with respect to its object focal plane, which facilitates the assembly and adjustment of the illuminator according to the invention.
- FIGS. 2a, 2b and 2c show schematically different embodiments of an illuminator according to the invention
- FIG. 3 represents the relative dispositions of the microlens matrices downstream of the shutter
- FIG. 4 represents the image of a slit of the shutter in the object focal plane of the condenser as a function of the coherence of light beams passing through a network of diaphragms.
- Figures 2a to 2c show schematically part of an illuminator according to the invention.
- the illuminator comprises a source 1 'of a light beam 10, for example a laser source, a diffractive element 1 placed at the output of the source 1', and a zoom 2 (these elements are not represented in Figures 2b and 2c).
- the beam 10 comprises, at its output from the afocal system L1 L2, a plurality of sub-beams 100 constituting sub-pupils of the output of the afocal system L1 L2.
- the illuminator comprises a shutter 3, represented in the form of two grids 31, 32, and positioned at the level of the exit pupils of the afocal system L1 L2.
- a homogenization optical system 4 comprising a third microlensed matrix L3 is placed downstream of the shutter 3, so that it is placed in the object focal plane of the homogenization optical system 4.
- the illuminator also comprises a condenser 5 which makes it possible to superimpose, at the level of a photolithography mask 7, the sub-beams 100 coming from the afocal system L1 L2, an apodization device 6 being provided between the condenser 4 and the plane in which the mask 7 is positioned.
- the focal plane object of the condenser 5 is advantageously arranged at the image focal plane of the homogenization system 4 to ensure the sharpness of the image of the shutter on the mask.
- a photolithography device comprising such an illuminator also comprises a mask 7 disposed on an edge w to be etched, the shutter being arranged in the conjugate plane of the image focal plane of the condenser 5, it being understood that in use, a projection optic the image of the mask 7 on the slice w.
- the homogenization system of the illuminator according to the invention makes it possible to obtain the sharpness and the telecentricity of the illuminator in two distinct directions, orthogonal to the optical axis. These directions are advantageously orthogonal to each other.
- the homogenization system making it possible to obtain this result comprises, in addition to the third microlens matrix L3, a fourth matrix of microlenses L4.
- FIG. 3 Schematically shows the shutter 3, located at the object focus P of the homogenization system, and the image focal plane F 'of this system, to be located to the object focal plane FC of the condenser, in both directions X and Y.
- the conditions of sharpness and telecentricity are ensured if the homogenization optical system has the same focal plane object and image in both directions X and Y.
- each micro-lens matrix is in the form of a plane blade comprising two faces 310, 320, 410, 420 facing one another, a plurality of cylindrical microlenses being etched on at least one one of said faces.
- the microlens matrix L3 comprises microlenses on each of its faces 310, 320, the microlenses being cylindrical, the axes of the microlenses of one face being orthogonal to the axes of the microlenses of the other face.
- the axes of the microlenses of the two faces are orthogonal to the optical axis so that the light rays reach the microlenses by their cylindrical surfaces.
- the microlens matrix L4 comprises cylindrical microlenses only on its first face 410 with respect to the direction of propagation of the luminous flux, the other face 420 being flat so as not to deflect the light rays in any direction.
- the axes of the cylinders of the microlenses are oriented so that, in a first direction, for example the Y direction, the homogenization system behaves as a convergent lens 31 disposed at the first face of the matrix L3.
- the plane of the shutter P is then at the object focal plane of said lens 31, and the object focal plane of the condenser FC is at the focal plane F 'of said lens.
- the axes of the cylindrical lenses of the first face of the microlens matrix L3 extend orthogonally to the direction Y, while the axes of the other cylindrical lenses (ie those of the second face of the matrix L3 and the first face of the matrix L4) extend parallel to the direction Y, so as not to deflect the propagation of the light beams in the direction Y.
- the axes of the cylinders of the microlenses are oriented parallel to the first direction Y, for the homogenization system 4 to behave as a system comprising:
- a diverging lens 41 at the first face of the matrix L4 the plane of the shutter being at the object focal plane of the convergent lens 32, and the object focal plane of the condenser being at the image focal plane F 'of the system.
- the lenses are dimensioned in a manner known to those skilled in the art so that their respective focal distances make it possible to obtain such a result.
- the positioning of the two microlens matrices L3 and L4, and the dimensioning of the lenses composing them, makes it possible to obtain a homogenization system 4 having the same focal length in both directions.
- the illuminator comprises, in order to control the diffraction phenomena at the output of the shutter, an array 8 of aperture diaphragms disposed in the plane of the Fourier transform, or Fourier plane, from the plane P of the shutter.
- this network comprises a plurality of diaphragms 80, each diaphragm 80 being disposed facing a corresponding microlens 40 of an adjacent matrix of the homogenization system.
- the homogenization system 4 comprises only an L3 matrix of microlenses; the network of diaphragms is then in the focal plane image of the matrix L3 of microlens, the diaphragms being opposite microlenses of this matrix L3.
- FIG. 2c the use of a network 8 of diaphragms with a homogenization system 4 comprising two microlens arrays L3 L4 has been combined as previously described with reference to FIG. 2a.
- the diaphragm network 8 is disposed between the two microlens matrices L3 and L4, in the plane of F ', this plane being the Fourier plane of the plane of the shutter.
- the diaphragms are located opposite the microlenses of the matrices L4 and L3 of microlenses.
- the presence of diaphragms makes it possible to avoid the crosstalk phenomena between the sub-beams 100 of the light beam.
- the array 8 of diaphragms also makes it possible to increase the depth of field sufficiently to make the accuracy of the illuminator less sensitive to a defocusing of the shutter with respect to the object focal plane of the homogenization system, and thus to facilitate the fabrication and the setting of the illuminator.
- the aperture diameter of a diaphragm is of the order of magnitude of a microlens.
- a microlens may have a diameter of the order of 0.5 mm, and an opening diameter may be of the order of 0.1 mm.
- the diffraction correction resulting from the presence of the shutter by the network of aperture diaphragms depends on certain parameters of the illuminator.
- the sharpness of the image depends on the coherence factor of the illumination of the network of diaphragms.
- the curve drawn for a "partially coherent" beam corresponds to a coherence factor of 0.3
- the slot is disposed at 25 mm, the transparent portion of the slot being less than 25 mm, and the opaque portion after 25 mm.
- the light intensity is represented as a percentage of the intensity of the incident beam. Theoretically, this intensity is equal to 100% at the level of the transparent part of the slot and falls to 0% at the level of the opaque part.
- the case where the beam is partially coherent is an intermediate case, providing a good compromise between the two previous cases. More specifically, an advantageous configuration is ensured when the beam has a coherence factor of between 0.2 and 0.8.
- microlens matrix L3 of the homogenization system ⁇ the angle of illumination of the shutter with respect to the optical axis, and b the aperture diameter of the diaphragms.
- the variations of the aperture diameters from one diaphragm to the other are between 0 and 50%, and preferably between 0 and 30%.
- the aperture diameters of the diaphragms advantageously follow a random statistical distribution, irrespective of the illumination of the shutter. This makes it possible to average the diffraction phenomena, for example even locally for a given sub-beam 100.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1259004A FR2996015B1 (fr) | 2012-09-25 | 2012-09-25 | Illuminateur de dispositif de photolithographie permettant la diffraction controlee |
| PCT/EP2013/069984 WO2014049001A1 (fr) | 2012-09-25 | 2013-09-25 | Illuminateur de dispositif de photolithographie permettant la diffraction controlee |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2901214A1 true EP2901214A1 (fr) | 2015-08-05 |
Family
ID=47666215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP13766352.2A Withdrawn EP2901214A1 (fr) | 2012-09-25 | 2013-09-25 | Illuminateur de dispositif de photolithographie permettant la diffraction controlee |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9933703B2 (fr) |
| EP (1) | EP2901214A1 (fr) |
| JP (1) | JP6296665B2 (fr) |
| CN (1) | CN104969128B (fr) |
| FR (1) | FR2996015B1 (fr) |
| WO (1) | WO2014049001A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2996016B1 (fr) * | 2012-09-25 | 2014-09-19 | Sagem Defense Securite | Illuminateur de photolithographie telecentrique selon deux directions |
| CN115857252A (zh) * | 2022-08-31 | 2023-03-28 | 东莞市美光达光学科技有限公司 | 一种高效、高均匀度的辅助照明系统的配光结构 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147708A (ja) * | 1982-02-26 | 1983-09-02 | Nippon Kogaku Kk <Nikon> | 照明用光学装置 |
| JPS6247124A (ja) * | 1985-08-27 | 1987-02-28 | Canon Inc | 露光装置用高速シヤツタ− |
| US5130213A (en) * | 1989-08-07 | 1992-07-14 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
| US6157039A (en) * | 1998-05-07 | 2000-12-05 | Etec Systems, Inc. | Charged particle beam illumination of blanking aperture array |
| US6583937B1 (en) * | 1998-11-30 | 2003-06-24 | Carl-Zeiss Stiftung | Illuminating system of a microlithographic projection exposure arrangement |
| AU3193800A (en) * | 1999-05-18 | 2000-12-05 | Nikon Corporation | Exposure method, illuminating device, and exposure system |
| WO2002029870A1 (fr) * | 2000-10-05 | 2002-04-11 | Nikon Corporation | Procede de determination des conditions d'exposition, procede d'exposition, dispositif de realisation dudit procede et support d'enregistrement |
| JP3605064B2 (ja) * | 2001-10-15 | 2004-12-22 | 株式会社ルネサステクノロジ | フォーカスモニタ用フォトマスク、フォーカスモニタ方法、フォーカスモニタ用装置および装置の製造方法 |
| US7210820B2 (en) * | 2003-05-07 | 2007-05-01 | Resonetics, Inc. | Methods and apparatuses for homogenizing light |
| JP3977311B2 (ja) * | 2003-10-10 | 2007-09-19 | キヤノン株式会社 | 照明装置及び当該照明装置を有する露光装置 |
| US6967711B2 (en) * | 2004-03-09 | 2005-11-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2005309380A (ja) * | 2004-03-26 | 2005-11-04 | Fuji Photo Film Co Ltd | 画像露光装置 |
| JP2008524662A (ja) * | 2004-12-22 | 2008-07-10 | カール・ツアイス・レーザー・オプティクス・ゲーエムベーハー | 線ビームを生成するための光学照射系 |
| US7304731B2 (en) * | 2005-09-02 | 2007-12-04 | Kla-Tencor Technologies Corp. | Systems and methods for providing illumination of a specimen for inspection |
| FR2890461B1 (fr) | 2005-09-05 | 2008-12-26 | Sagem Defense Securite | Obturateur et illuminateur d'un dispositif de photolithographie |
| KR20080108341A (ko) * | 2006-04-03 | 2008-12-12 | 가부시키가이샤 니콘 | 액침 액체에 대해 소용매성인 입사면 및 광학 윈도우 |
| US20080013182A1 (en) * | 2006-07-17 | 2008-01-17 | Joerg Ferber | Two-stage laser-beam homogenizer |
| CN101587302B (zh) * | 2006-11-03 | 2011-10-12 | 上海微电子装备有限公司 | 一种光刻照明系统 |
| US7834980B2 (en) * | 2006-12-21 | 2010-11-16 | Asml Netherlands B. V. | Lithographic apparatus and method |
| US8115904B2 (en) * | 2008-05-30 | 2012-02-14 | Corning Incorporated | Illumination system for sizing focused spots of a patterning system for maskless lithography |
| CN101458451B (zh) * | 2008-12-31 | 2012-01-11 | 北京航空航天大学 | 一种适用于飞秒激光双光子微纳加工系统的光路结构 |
| EP2389606B1 (fr) * | 2009-01-24 | 2019-08-28 | Ecole Polytechnique Federale De Lausanne (EPFL) EPFL-TTO | Microscopie haute résolution et dispositifs de photolithographie utilisant des miroirs microscopiques de focalisation |
| DE102009045219A1 (de) * | 2009-09-30 | 2011-03-31 | Carl Zeiss Smt Gmbh | Beleuchtungssystem für die Mikrolithographie |
| NL2005548A (en) * | 2009-11-20 | 2011-05-23 | Asml Netherlands Bv | Homogenizer. |
| FR2996016B1 (fr) * | 2012-09-25 | 2014-09-19 | Sagem Defense Securite | Illuminateur de photolithographie telecentrique selon deux directions |
-
2012
- 2012-09-25 FR FR1259004A patent/FR2996015B1/fr not_active Expired - Fee Related
-
2013
- 2013-09-25 EP EP13766352.2A patent/EP2901214A1/fr not_active Withdrawn
- 2013-09-25 JP JP2015532464A patent/JP6296665B2/ja not_active Expired - Fee Related
- 2013-09-25 WO PCT/EP2013/069984 patent/WO2014049001A1/fr not_active Ceased
- 2013-09-25 US US14/430,896 patent/US9933703B2/en not_active Expired - Fee Related
- 2013-09-25 CN CN201380057302.6A patent/CN104969128B/zh not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| None * |
| See also references of WO2014049001A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2996015A1 (fr) | 2014-03-28 |
| US20150248063A1 (en) | 2015-09-03 |
| JP2015535949A (ja) | 2015-12-17 |
| JP6296665B2 (ja) | 2018-03-20 |
| US9933703B2 (en) | 2018-04-03 |
| WO2014049001A1 (fr) | 2014-04-03 |
| FR2996015B1 (fr) | 2014-09-12 |
| CN104969128B (zh) | 2017-08-01 |
| CN104969128A (zh) | 2015-10-07 |
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| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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