EP2887450B1 - Hyperfrequenz-Bandpassfilter, der durch entsprechende Drehung eines Einsatzteils und eines dielektrischen Elements anpassbar ist - Google Patents

Hyperfrequenz-Bandpassfilter, der durch entsprechende Drehung eines Einsatzteils und eines dielektrischen Elements anpassbar ist Download PDF

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Publication number
EP2887450B1
EP2887450B1 EP14198053.2A EP14198053A EP2887450B1 EP 2887450 B1 EP2887450 B1 EP 2887450B1 EP 14198053 A EP14198053 A EP 14198053A EP 2887450 B1 EP2887450 B1 EP 2887450B1
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Prior art keywords
shape
filter according
insert section
filter
symmetry
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EP14198053.2A
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English (en)
French (fr)
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EP2887450A1 (de
Inventor
Hussein Ezzeddine
Aurélien Perigaud
Olivier Tantot
Nicolas Delhote
Stéphane BILA
Serge Verdeyme
Damien Pacaud
Laetitia Estagerie
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Centre National dEtudes Spatiales CNES
Centre National de la Recherche Scientifique CNRS
Thales SA
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Centre National dEtudes Spatiales CNES
Centre National de la Recherche Scientifique CNRS
Thales SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • H01P1/2084—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure with dielectric resonators
    • H01P1/2086—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure with dielectric resonators multimode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • H01P1/2084—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure with dielectric resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/10—Dielectric resonators
    • H01P7/105—Multimode resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/06—Cavity resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/10—Dielectric resonators

Definitions

  • the present invention relates to the field of frequency filters in the field of microwave waves, typically frequencies between 1 GHz to 30 GHz. More particularly, the present invention relates to frequency tunable band pass filters.
  • microwave wave for example received by a satellite
  • the processing of a microwave wave requires the development of specific components, allowing the propagation, amplification, and filtering of this wave.
  • a microwave received by a satellite must be amplified before being sent back to the ground.
  • This amplification is only possible by separating all the frequencies received into channels, each corresponding to a given frequency band. The amplification is then carried out channel by channel. Channel separation requires the development of bandpass filters.
  • tunable bandpass filters in the microwave domain is the use of passive semiconductor components, such as PIN diodes, continuously variable capacitors, or capacitive switches.
  • passive semiconductor components such as PIN diodes, continuously variable capacitors, or capacitive switches.
  • MEMS micro electromechanical systems
  • the technology of the filters based on dielectric elements is known. It allows non-tunable band pass filters.
  • These filters typically comprise an at least partially closed cavity, comprising a conducting wall (typically metallic, for example aluminum or invar) in which is disposed a dielectric element, typically of round or square shape (the dielectric material is typically zirconia, alumina or BMT).
  • a conducting wall typically metallic, for example aluminum or invar
  • a dielectric element typically of round or square shape (the dielectric material is typically zirconia, alumina or BMT).
  • An input excitation means introduces the wave into the cavity (for example a coaxial cable terminated by an electric probe or an iris-coupled waveguide) and an output excitation means of the same nature bring the wave out of the cavity.
  • a bandpass filter allows the propagation of a wave over a certain frequency range and attenuates this wave for the other frequencies. This defines a bandwidth and a central frequency of the filter. For frequencies around its center frequency, a bandpass filter has high transmission and low reflection.
  • the bandwidth of the filter is characterized in different ways depending on the nature of the filter.
  • Parameter S is a parameter that accounts for filter performance in terms of reflection and transmission.
  • S11, or S22 corresponds to a measurement of the reflection and S12, or S21, to a measurement of the transmission.
  • a filter performs a filtering function.
  • This function can generally be approximated via mathematical models (functions of Chebychev, Bessel, ). These functions are usually based on polynomial relationships.
  • the filter bandwidth is determined at S11 (or S22) equi-ripple, for example at 15dB or 20 dB of reduction of the reflection on its out-of-band level.
  • the band is taken at -3dB (when S21 crosses S11 if the filter has negligible losses).
  • a filter typically comprises at least one resonator comprising the metal cavity and the dielectric element.
  • a resonance mode of the filter corresponds to a particular distribution of the electromagnetic field which is excited at a particular frequency.
  • these filters may be composed of a plurality of resonators coupled together.
  • the central frequency and the filter bandwidth depend both on the geometry of the cavities and the dielectric elements, as well as the coupling of the resonators with each other as well as couplings with the input and output excitation means of the filter.
  • Coupling means are for example openings or slots called iris, electrical or magnetic probes or microwave lines.
  • the filter passes a signal whose frequency is in the bandwidth, but the signal is nevertheless attenuated by the losses of the filter.
  • the tuning of the filter making it possible to obtain a transmission maximum for a given frequency band is very difficult to produce and depends on all the parameters of the filter. It is moreover dependent on the temperature.
  • the resonant frequencies of the filter resonators can be very slightly modified by means of metal screws, but this process is carried out empirically, is very expensive in time and allows only a very low frequency tunability, typically of the order of a few%.
  • the objective is not the tunability but the obtaining of a precise value of the central frequency, and it is desired to obtain a reduced sensitivity of the frequency of each resonator with respect to the depth of the screw.
  • a resonator has, according to its geometry, one or more resonance modes, each characterized by a particular (remarkable) distribution of the electromagnetic field causing a resonance of the microwave wave in the structure at a partocular frequency.
  • resonance modes TE for Electric Transverse or H in English terminology
  • TM for Magnetic Transverse or E in English terminology
  • the figure 1 describes by way of example the resonance frequencies of the different modes for an empty circular cavity as a function of the dimensions of the cavity (diameter D and height H).
  • resonator filters operating in several modes (typically 2 or 3) are known in the art.
  • filters operating in a dual mode (“dual mode filter” in English terminology) are known.
  • These modes have two perpendicular polarizations X and Y having a remarkable and specific distribution of the electromagnetic field in the cavity: the distributions of the electromagnetic fields corresponding to the two polarizations are orthogonal and are deduced from each other by a rotation of 90 ° around an axis of symmetry of the resonator.
  • the two orthogonal polarizations have the same resonance frequency and are not coupled.
  • the coupling between polarizations is obtained by breaking the symmetry, for example by introducing a discontinuity (perturbation) at 45 ° of the X and Y polarization axes, typically using metal screws.
  • the resonance frequencies can be tuned (possibly on different frequencies) by introducing discontinuities (disturbances) in the polarization axes (X and Y).
  • the two polarizations X and Y of a dual mode can resonate at the same frequency (symmetry along the axes of polarization) or two slightly different frequency (asymmetry along the axes of polarization).
  • dual modes thus make it possible to produce two electrical resonances in a single resonant element.
  • Several modes having these particular field distributions can be used.
  • dual modes TE11 n (H11 n) are widely used in cavity filters because they lead to a good compromise between a high quality factor (especially as the index n is large), a small footprint ( divided by 2 by using dual modes) and a significant frequency isolation compared to other modes of resonance (which we do not want to couple to ensure the proper operation of the filter).
  • the object of the present invention is to provide cavity type filters with dielectric elements, which are compact, tunable at central frequency, and do not have the aforementioned drawbacks (quality factor and RF losses degraded by tunability, poor power handling). .).
  • At least one of the shape of the insert section and the shape of the element comprises at least two orthogonal planes of symmetry intersecting along the Z axis.
  • the shape of the insert section and the shape of the element each comprise at least two orthogonal planes of symmetry S1, S3, Si1, Si3 intersecting along the axis Z.
  • the first position is such that the symmetry planes of the insert section coincide with the plane of symmetry of the element to 10 °.
  • At least one of the shape of the insert section and the shape of the element has four symmetry planes S1, S2, S3, S4, Si1, Si2, Si3, Si4, two planes of symmetry consecutive being separated by an angle of 45 °, and intersecting along the Z axis.
  • At least one of the shape of the insert section and the shape of the element has concavities and / or convexities whose extrema are located in the vicinity of axes of symmetry.
  • the substantially cylindrical shape has a guide curve chosen from a circle, a square.
  • a resonant mode of the resonator is of the type H113 having three maximas of the electric field in said cavity along the axis Z.
  • the resonator further comprises rotation means adapted to perform said rotation.
  • the insert section is movable relative to the conductive wall.
  • the movable insert section comprises a movable adjustment ring.
  • the dielectric element is movable relative to the conductive wall.
  • the rotation means comprise a rod integral with the dielectric element and comprising a dielectric material.
  • the filter comprises a plurality of resonators and coupling means adapted to couple together two consecutive resonators.
  • the filter further comprises connecting means adapted to equalize the respective rotations of the rotation means of the resonators.
  • the connecting means comprise said rod integral with a plurality of elements arranged along the rod.
  • the invention relates to a microwave circuit comprising at least one filter according to the invention.
  • the invention consists in producing a tunable bandpass filter in central frequency of "dual mode" type from a rotation of different elements composing the filter.
  • the filter comprises at least one resonator R, each resonator comprising a cavity 30 having a conductive wall, typically metallic, substantially cylindrical along an axis Z, and at least one dielectric element disposed inside the cavity,
  • the figure 2 describes a cross section of a resonator R of the filter according to the invention in a plane perpendicular to the axis Z.
  • the filter operates in a dual mode ("dual mode filter"), which means that the resonator resonates on two perpendicular polarizations called X and Y which respectively have distributions of the electromagnetic field in the cavity 30 being deduced one of the another by a rotation of 90 °.
  • Both polarizations may resonate at the same frequency or at slightly different frequencies. In the latter case the frequency response of the filter is asymmetrical.
  • the symmetry of the mode can be slightly broken to couple the two polarizations (see below).
  • the cavity 30 is disposed at least one dielectric element 21.
  • the wall of the cavity is generally cylindrical but comprises a specific section, called insert section 20, facing the element 21, that is to say corresponding to the part of the wall substantially “facing" to the element in the cavity 30.
  • the insert section 20 has a shape 10 different from the shape of a section of the same wall not located opposite the element. Preferably, it is the shape of the inner wall of the cavity that has a specific shape.
  • the wall of the cavity has a cylindrical shape of revolution, but the shape of the insert section 10 differs from the circle.
  • the insert section 20 and the element 21 are able to rotate relative to each other along the axis Z so as to define at least a first relative position P1 and a second relative position P2 differing from one another. an angle substantially equal to 45 ° to 20 °.
  • the figure 2a describes the resonator according to the first position P1 and the figure 2b describes the resonator according to the second relative position P2.
  • the relative angle between the element and the insert section varies from about 45 ° +/- 20 ° between the two positions.
  • the relative angle is between 25 ° and 65 °.
  • the relative angle is between 45 ° +/- 10 °, ie between 35 ° and 55 °.
  • the contours of the insert section and the element are adapted so that the first position P1 corresponds to a resonator geometry resonating at a first central frequency f1, and the second position P2 corresponds to a resonator geometry resonating according to a second center frequency f2.
  • the relative rotation of the element with respect to the insert section makes it possible to modify the central frequency of the filter according to the invention, according to at least two central frequency values f1 and f2, which is suitable for applications of the type "Channel jump". Such an effect is obtained by varying the capacitive effect induced by the rotation, as described below.
  • a filter according to the invention thus has many advantages.
  • the filter is both dual, with all the associated benefits such as compactness, and tunable.
  • RF performance is not significantly degraded by frequency change, and quality factor Q is also not substantially degraded compared with those conventionally obtained with resonant cavities, among others due to the limited impact of the dielectric element 21 on the losses of the filter.
  • quality factor Q is also not substantially degraded compared with those conventionally obtained with resonant cavities, among others due to the limited impact of the dielectric element 21 on the losses of the filter.
  • a factor Q> 10000 is obtained for a filter according to the invention, whereas the other known tuning solutions, either are not applicable to the production of a dual mode filter, or strongly degrade the losses compared to a filter without a tuning element.
  • the filter has a narrow band (see below for an example of performance as a function of frequency).
  • the filter is capable of supporting a high power microwave signal, typically greater than 150W. These levels of power withstand are totally unimaginable with semiconductor components or MEMS.
  • the shape with these planes is fixed.
  • the resonator of the filter according to the invention further comprises rotation means adapted to perform the rotation.
  • a filter according to the invention has an insert section or an element having properties of particular symmetry allowing the filter to optimally fill the desired function.
  • At least one of the shape of the insert section 20 and the shape of the element 21 comprises at least two orthogonal planes of symmetry intersecting along the Z axis.
  • FIG 2 it is the shape 11 of the element 21, that is to say the outer contour of the element in a section perpendicular to the Z axis, which comprises at least two orthogonal planes of symmetry Si1 and Si3, intersecting along the Z axis, schematized along two lines in solid lines in the sectional diagrams of Figures 2a and 2b .
  • the angle of rotation can be referenced for example with respect to the axes S1 and Si1, but it is the relative angle between the element and the insert section that varies by about 45 ° +/- 20 ° between the two positions.
  • Figure 3 illustrates another variant of geometry of the shape of the insert section and the shape of the element.
  • figure 3a describes the resonator according to the first position P1 and the figure 3b describes the resonator according to the second relative position P2.
  • the form 10 of the insert section 20 that is to say the perimeter of the wall in a section facing the element (preferably the inner perimeter) comprises at least two orthogonal planes of symmetry S1 and S3 intersecting along the Z axis, schematized along two dotted lines in the sectional diagrams of Figures 3a and 3b .
  • the shape of the insert section 10 is understood to mean the overall shape, leaving out fine adjustment elements, such as 45 ° screws (not shown), locally introducing a slight asymmetry to couple the two polarizations to one another.
  • the shape 21 of the element 11 also has two planes of symmetries Si1 and Si3.
  • the form 10 of the insert section 20 and the shape 11 of the element 21 each comprise at least two orthogonal planes of symmetry, respectively (S1, S3) and (Si1, Si3), intersecting with each other. Z axis.
  • the first position P1 is such that the symmetry planes S1 and S3 of the insert section 20 coincide with the Si1 Si3 symmetry planes of the element 21 to 10 °, as illustrated figure 3 .
  • the form 10 of the insert section 20 and / or the shape 11 of the element 21 has four symmetry planes called S1, S2, S3 and S4 for the insert section and Si1, Si2, Si3 and Si4 for the element, two consecutive planes of symmetry being separated by an angle of 45 °, and intersecting along the Z axis.
  • This geometry also allows a calculation of optimization of the dual mode filter simpler and faster, with a simplified design of the filter structure.
  • the figure 4 is a sectional view perpendicular to the Z axis, and the figure 5 a perspective view, to visualize the insert section 20.
  • the Figures 4a and 5a describe the resonator R according to the first position P1 and the Figures 4a and 4b describe the resonator R according to the second relative position P2.
  • the Figures 4 and 5 also illustrate a first variant in which it is the insert section 20 which is movable relative to the element 21, Preferably the insert section is also movable relative to the conductive wall 50 of the resonator R, in order to preserve the continuity of the wall 50.
  • a rotational insert section is then disposed inside the cavity 30.
  • the shape of the insert section is obtained by adding metal parts 51 (which are for example convexities). considering these surfaces from inside the cavity), along the section, these locally modifying parts, locally decreasing locally, in the regions facing the element, the diameter of the cavity and therefore the distance between the element and the metal wall 50.
  • the insert section corresponds to a setting ring made mobile. According to the azimuthal angle, the radius of the ring is variable so the perturbation seen by the two polarizations X and Y is different in the positions P1 and P2 (see below).
  • the adjusting ring is made mobile by means of a rotary joint in order to maintain the electrical continuity between the fixed part and the mobile part.
  • the structure of the element and the insert section in the Z direction is homogeneous. This homogeneity corresponds to a preferred embodiment because it is simpler to carry out, but the Z structure could also be variable.
  • a cylindrical surface is defined by a guide curve described by a straight line called generatrix of the cylinder.
  • the guiding curve of the wall of the Filter according to the invention is preferably a circle or a square, for reasons of intrinsic symmetry of this type of cavity and ease of design and manufacture.
  • a dual mode is established preferentially according to certain particular modes of cavity, thus corresponding to preferred embodiments of the invention.
  • FIGs 6, 7 and 8 illustrate alternative forms of insert section 10 and element 11 and relative rotation relative to each other of a resonator according to the invention.
  • concavities 80 views of the interior of the cavity locally increase the distance between the element and the metal wall.
  • the shape of the insert section and / or the shape of the element has concavities and / or convexities whose extrema are located in the vicinity of axes of symmetry of the resonator.
  • the insert section in the vicinity of the planes of symmetry (S1, S2, S3, S4).
  • the element in the vicinity of the planes of symmetry (Si1, Si2, Si3, Si4).
  • the figure 9 illustrates the variations of the electric field of one of the resonant (X or Y) polarizations in the cavity of the resonator of the Figures 4-5 .
  • the figure 9a describes the resonator R according to the first relative position P1 and the figure 9b describes the resonator R according to the second relative position P2, for which the insert section 20 has rotated 45 ° relative to the element 21.
  • the dashed areas referenced 90 illustrate the areas for which the electric field has a maximum.
  • the electric field is concentrated between the points of the element and the convexities / excrescences 51 of the insert section.
  • this electric field is concentrated between the edges of the element and the convexities 51.
  • the modification of the resonance frequency of the filter is obtained by varying the capacitive effect between the insert 21 and the insert section 20.
  • a parallel association resistance-capacitance-inductance resonator RLC
  • This circuit has a resonance frequency function of the product L.C.
  • the capacitive effect induced by the presence of a dielectric element is a function of its geometry and the characteristics of the material that composes it (dielectric permittivity), but also of the resonance mode (in particular of the associated distribution of the electromagnetic field).
  • the electromagnetic field is influenced only by a part of the element.
  • a variation of the shape of the element in areas of high amplitude of the electric field changes the capacitive effect of the resonator.
  • the contrast obtained on the capacitive effect is maximized when this variation is localized on a maximum of electric field.
  • the effect In the case of a dual mode filter, the effect must be generally the same on each polarization to obtain the same frequency shift for both polarizations.
  • the filter comprises a plurality of resonators and coupling means adapted to couple together two consecutive resonators.
  • FIG. 10 illustrates a filter 100 comprising two resonators R1 and R2 each comprising a cavity 102 and 103, and a dielectric element 106, 107, the resonators being coupled to each other by means of a coupling means 101, here an iris . of the input and exit means 104 and 105 enable the microwave respectively to enter and exit the filter.
  • the cylindrical metal wall 50 is in this example common to both cavities, and the coupling is made by the bottom. But the filter according to the invention is of course compatible with a lateral coupling, as illustrated figure 11 .
  • the filter 100 of the figure 10 comprises two cavities, each resonating on two polarizations, and thus constitutes a filter called "4 poles".
  • the invention is of course compatible with 3 cavities (or more), to obtain a narrower bandwidth, as illustrated figure 12 .
  • the element is movable relative to the conductive wall and relative to the insert section which is fixed.
  • the rotation means comprise a rod 120 of dielectric material integral with the element, or a plurality of elements when the structure of the cavities allows it, such as on the figure 12 .
  • the coupling is made by the bottom, the successive elements are thus aligned along the same axis and can be all integral with the same rod.
  • This geometry has the advantage of allowing control of all the rotations of the plurality of elements with the same element. This geometry is of course compatible with a lateral coupling, rather than the bottom as illustrated figure 14 .
  • the filter further comprises connecting means adapted to equalize the respective rotations of the rotation means of the resonators.
  • the rod is also a connecting means.
  • the rotation means may also comprise a stepping motor for controlling the rotation of the elements, in the case where a reconfiguration of the filter must be carried out in flight for example.
  • the invention also relates to a microwave circuit comprising at least one filter according to the invention.

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Claims (17)

  1. Bandpassfilter (100) für eine frequenzabstimmbare Mikrowelle, das wenigstens einen Resonator (R, R1, R2) umfasst,
    - wobei jeder Resonator einen Hohlraum (30, 102, 103) mit einer im Wesentlichen zylindrischen leitenden Wand (50) entlang einer Achse Z und wenigstens ein im Inneren des Hohlraums angeordnetes dielektrisches Element (21, 106, 107) aufweist;
    - wobei der Resonator auf zwei senkrechten Polarisationen (X, Y) jeweils mit Unterteilungen des elektromagnetischen Feldes in dem Hohlraum resoniert, die um eine Drehung von 90° voneinander abgeleitet sind;
    - wobei die Wand des Hohlraums (50) einen Einführungsteil (20) gegenüber dem Element (21, 106, 107) mit einer Form (10) umfasst, die sich von einem Teil unterscheidet, der sich nicht gegenüber dem Element befindet;
    - wobei der Einführungsteil (20) und das Element (21, 106, 107) eine Rotation relativ zueinander entlang der Z-Achse ausführen können, um wenigstens eine erste (P1) und eine zweite (P2) relative Position zu definieren, die sich durch einen Winkel unterscheiden, der im Wesentlichen etwa gleich 45° bis 20° ist.
  2. Filter nach Anspruch 1, wobei wenigstens eine Form aus der Form (10) des Einführungsteils (20) und der Form (11) des Elements (21) wenigstens zwei orthogonale Symmetrieebenen (S1, S3), (Si1, Si3) umfasst, die sich entlang der Z-Achse schneiden.
  3. Filter nach Anspruch 1 oder 2, wobei die Form (10) des Einführungsabschnitts (20) und die Form (11) des Elements (21) jeweils wenigstens zwei orthogonale Symmetrieebenen (S1, S3), (Si1, Si3) umfassen, die sich entlang der Z-Achse schneiden.
  4. Filter nach Anspruch 3, wobei die erste Position (P1) derart ist, dass die Symmetrieebenen (S1, S3) des Einführungsabschnitts (20) mit den Symmetrieebenen (Si1, Si3) des Elements um etwa 10° übereinstimmen.
  5. Filter nach einem der vorherigen Ansprüche, wobei wenigstens eine Form aus der Form des Einführungsabschnitts (10) und der Form des Elements (11) vier Symmetrieebenen (S1, S2, S3, S4) (Si1, Si2, Si3, Si4) hat, wobei zwei konsekutive Symmetrieebenen um einen Winkel von 45° getrennt sind und sich entlang der Z-Achse schneiden.
  6. Filter nach einem der Ansprüche 2 bis 5, wobei wenigstens eine Form aus der Form des Einführungsabschnitts (10) und der Form des Elements (11) Konkavitäten und/oder Konvexitäten (51, 80) hat, deren Extreme sich in der Nähe der Symmetrieachsen (S1, S2, S3, S4) (Si1, Si2, Si3, Si4) befinden.
  7. Filter nach einem der vorherigen Ansprüche, wobei die im Wesentlichen zylindrische Form eine aus einem Kreis, einem Quadrat ausgewählte Leitlinie hat.
  8. Filter nach einem der vorherigen Ansprüche, wobei eine Resonanzmode des Resonators vom H113-Typ mit drei Maxima des elektrischen Feldes in dem Hohlraum entlang der Z-Achse ist.
  9. Filter nach einem der vorherigen Ansprüche, wobei der Resonator ferner Rotationsmittel umfasst, die die Rotation durchführen können.
  10. Filter nach einem der vorherigen Ansprüche, wobei der Einführungsabschnitt relativ zu der leitenden Wand beweglich ist.
  11. Filter nach Anspruch 10, wobei der bewegliche Einführungsabschnitt einen beweglichen Einstellring umfasst.
  12. Filter nach einem der Ansprüche 1 bis 9, wobei das dielektrische Element in Bezug auf die leitende Wand beweglich ist.
  13. Filter nach Anspruch 9, wobei das Rotationsmittel einen Stab (120) einstückig mit dem dielektrischen Element umfasst, der ein dielektrisches Material beinhaltet.
  14. Filter nach einem der vorherigen Ansprüche, das mehrere Resonatoren (R1, R2) und Kopplungsmittel (101) zum Koppeln von zwei konsekutiven Resonatoren miteinander umfasst.
  15. Filter nach Anspruch 14, das ferner Verbindungsmittel zum Ausgleichen der jeweiligen Rotationen der Mittel zum Drehen der Resonatoren umfasst.
  16. Filter nach Anspruch 15, wobei die Verbindungsmittel den Stab einstückig mit mehreren entlang dem Stab angeordneten Elementen umfassen.
  17. Mikrowellenschaltung, die wenigstens ein Filter nach einem der vorherigen Ansprüche umfasst.
EP14198053.2A 2013-12-20 2014-12-15 Hyperfrequenz-Bandpassfilter, der durch entsprechende Drehung eines Einsatzteils und eines dielektrischen Elements anpassbar ist Active EP2887450B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1303030A FR3015783B1 (fr) 2013-12-20 2013-12-20 Filtre hyperfrequence passe bande accordable par rotation relative d'une section d'insert et d'un element dielectrique

Publications (2)

Publication Number Publication Date
EP2887450A1 EP2887450A1 (de) 2015-06-24
EP2887450B1 true EP2887450B1 (de) 2016-07-27

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DE102015012401A1 (de) * 2015-09-24 2017-03-30 Airbus Ds Gmbh Polarisations-bewahrendes Filter für einen dual polarisierten Hohlleiter
US20180123255A1 (en) * 2016-10-31 2018-05-03 Nokia Solutions And Networks Oy Polarized Filtenna, such as a Dual Polarized Filtenna, and Arrays and Apparatus Using Same
EP3583655A1 (de) 2017-02-15 2019-12-25 Isotek Microwave Limited Ein mikrowellenresonator
GB2573381B (en) 2018-03-16 2022-07-20 Isotek Microwave Ltd A microwave resonator, a microwave filter and a microwave multiplexer
CN108461879B (zh) * 2018-03-22 2020-09-01 京信通信技术(广州)有限公司 腔体滤波器
CN112234328B (zh) * 2020-10-10 2022-02-01 南宁国人射频通信有限公司 一种介质双模滤波器
CN116565495B (zh) * 2023-07-10 2023-09-26 苏州惠若恩科技有限公司 一种腔体滤波器

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FI88228C (fi) * 1991-05-09 1993-04-13 Telenokia Oy Dielektrisk resonatorkonstruktion
JP3232845B2 (ja) * 1994-01-24 2001-11-26 株式会社村田製作所 誘電体共振器装置
US5495216A (en) * 1994-04-14 1996-02-27 Allen Telecom Group, Inc. Apparatus for providing desired coupling in dual-mode dielectric resonator filters
FR2803693B1 (fr) * 2000-01-12 2003-06-20 Cit Alcatel Resonateur, notamment pour fil trehyperfrequence, et filtre le comportant
US7705694B2 (en) * 2006-01-12 2010-04-27 Cobham Defense Electronic Systems Corporation Rotatable elliptical dielectric resonators and circuits with such dielectric resonators
FR3005209B1 (fr) * 2013-04-26 2015-04-10 Thales Sa Filtre hyperfrequence avec element dielectrique

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EP2887450A1 (de) 2015-06-24
US20150180106A1 (en) 2015-06-25
ES2599803T3 (es) 2017-02-03
FR3015783B1 (fr) 2016-01-15
FR3015783A1 (fr) 2015-06-26
CA2875004A1 (en) 2015-06-20
US9620837B2 (en) 2017-04-11

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