EP2847801A1 - Solar cell containing n-type doped silicon - Google Patents
Solar cell containing n-type doped siliconInfo
- Publication number
- EP2847801A1 EP2847801A1 EP13715266.6A EP13715266A EP2847801A1 EP 2847801 A1 EP2847801 A1 EP 2847801A1 EP 13715266 A EP13715266 A EP 13715266A EP 2847801 A1 EP2847801 A1 EP 2847801A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- type
- semiconductor zone
- concentration
- doped
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 15
- 239000010703 silicon Substances 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000012535 impurity Substances 0.000 claims abstract description 31
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 239000002019 doping agent Substances 0.000 claims description 26
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The invention relates to a photovoltaic device comprising a first semiconductor area (2) containing n-type doped silicon and a second semiconductor area (3) containing p-type doped silicon. The two semiconductor areas are configured to form a p-n junction. The first semiconductor area (2) is free of boron and comprises a concentration of p-type doping impurities that is at least equal to 20% of the concentration of n-type doping impurities.
Description
Cellule solaire à base de silicium dopé de type N Solar cell based on doped N-type silicon
Domaine technique de l'invention Technical field of the invention
L'invention est relative à une cellule solaire munie d'une zone en silicium dopée de type N formant une jonction PN avec une zone en silicium dopée de type P. The invention relates to a solar cell provided with an N-type doped silicon zone forming a PN junction with a p-type doped silicon zone.
État de la technique State of the art
Dans le domaine des dispositifs photovoltaïques, il y a communément une jonction de type PN qui est formée dans un matériau semi-conducteur et qui est polarisée. Une partie des photons captés par le matériau semiconducteur est transformée en des paires électron-trou ce qui induit un courant électrique à l'intérieur du dispositif photovoltaïque. Un travail important est réalisé afin d'augmenter le rendement de conversion des dispositifs photovoltaïques, c'est-à-dire afin d'augmenter la quantité d'énergie électrique produite pour une quantité donnée d'énergie lumineuse incidente. Cependant, les améliorations obtenues doivent également être facilement intégrables et avec un coût d'intégration modéré de manière à limiter le prix final du dispositif photovoltaïque. In the field of photovoltaic devices, there is commonly a PN-type junction which is formed in a semiconductor material and is polarized. Part of the photons captured by the semiconductor material is converted into electron-hole pairs which induces an electric current inside the photovoltaic device. Significant work is done to increase the conversion efficiency of photovoltaic devices, that is, to increase the amount of electrical energy produced for a given amount of incident light energy. However, the improvements obtained must also be easily integrable and with a moderate integration cost so as to limit the final price of the photovoltaic device.
Objet de l'invention
On constate qu'il existe un besoin de prévoir des dispositifs photovoltaïques qui soient plus performants tout en conservant une réalisation simple et bon marché. On tend à atteindre cet objectif au moyen d'un dispositif photovoltaïque qui comporte : Object of the invention It is noted that there is a need to provide photovoltaic devices that are more efficient while maintaining a simple and inexpensive realization. This goal is achieved by means of a photovoltaic device that includes:
- Une première zone semiconductrice à base de silicium dopé de type N, A first semiconductor zone based on doped N-type silicon,
- une deuxième zone semiconductrice à base de silicium dopé de type P et configurée pour former une jonction PN ou PIN avec la première zone semiconductrice, a second semiconductor zone based on doped P-type silicon and configured to form a PN or PIN junction with the first semiconductor zone,
et dans lequel la première zone semiconductrice comporte une concentration en impuretés dopantes de type P qui est au moins égale à 20% de la concentration en impuretés dopantes de type N. and wherein the first semiconductor zone has a P-type dopant impurity concentration which is at least 20% of the N-type dopant impurity concentration.
Description sommaire des dessins Brief description of the drawings
D'autres avantages et caractéristiques ressortiront plus clairement de la description qui va suivre de modes particuliers de réalisation de l'invention donnés à titre d'exemples non limitatifs et représentés aux dessins annexés, dans lesquels les figures 1 et 2 représentent en coupe, de manière schématique deux dispositifs photovoltaïques. Other advantages and features will emerge more clearly from the following description of particular embodiments of the invention given by way of non-limiting example and represented in the accompanying drawings, in which FIGS. schematically two photovoltaic devices.
Description de modes préférentiels de réalisation Description of preferred embodiments
Comme cela est illustré aux figures 1 et 2, la cellule photovoltaïque 1 est réalisée à base de silicium, c'est-à-dire quelle comporte au moins 50% de silicium dans ces zones semiconductrices. De manière encore plus préférentielle, elle comporte au moins une première zone semiconductrice 2 également appelée substrat. Cette première zone semiconductrice 2 est à
base de silicium et elle est dopée de type N. Le dopage de type N peut être obtenu par l'apport d'une ou plusieurs impuretés dopantes électriquement. Ces impuretés dopantes de type N sont avantageusement choisies parmi P, As, Sb, Li. As illustrated in Figures 1 and 2, the photovoltaic cell 1 is made of silicon, that is to say that has at least 50% silicon in these semiconductor zones. Even more preferably, it comprises at least one first semiconductor zone 2 also called substrate. This first semiconductor zone 2 is at silicon base and it is N-type doped. The N-type doping can be obtained by the addition of one or more electrically doping impurities. These N-type doping impurities are advantageously chosen from P, As, Sb, Li.
La cellule photovoltaïque 1 comporte également une deuxième zone semiconductrice 3 à base de silicium. Cette deuxième zone semiconductrice 3 est dopée de type P et elle est agencée de manière à former une jonction PN ou une jonction PIN avec la première zone semiconductrice 2 de type N. La deuxième zone semiconductrice 3 de type P est dopée avec des impuretés dopantes électriquement avantageusement choisies parmi B, Ga, In, Al, Ti. Dans un mode de réalisation particulièrement avantageux, la première zone semiconductrice a une épaisseur au moins égale à 1 micromètre ou elle représente la plus grande partie du volume semi- conducteur de la cellule solaire. The photovoltaic cell 1 also comprises a second semiconductor zone 3 based on silicon. This second semiconductor zone 3 is P-doped and is arranged to form a PN junction or a PIN junction with the first N-type semiconductor zone 2. The second P-type semiconductor zone 3 is doped with electrically doping impurities. advantageously chosen from B, Ga, In, Al, Ti. In a particularly advantageous embodiment, the first semiconductor zone has a thickness of at least 1 micrometer or it represents the greater part of the semiconductor volume of the solar cell.
De manière avantageuse, la deuxième zone semiconductrice 3 de type P est dépourvue d'atomes de bore, c'est-à-dire que la concentration en bore est inférieure à 10ppba. Dans une variante de réalisation, la concentration en atomes de bore est inférieure à 0,2ppma. Cette faible concentration en bore permet de limiter les effets de dégradation de la durée de vie sous éclairement. Advantageously, the second P-type semiconductor zone 3 is devoid of boron atoms, that is to say that the boron concentration is less than 10 ppm. In an alternative embodiment, the concentration of boron atoms is less than 0.2 ppm. This low concentration of boron makes it possible to limit the effects of degradation of the lifetime under illumination.
Dans un mode de réalisation particulier, la première zone semiconductrice 2 de type N a une épaisseur beaucoup plus importante que la deuxième zone semiconductrice 3 de type P. En comparaison d'une cellule solaire ayant une première zone semiconductrice 2 de type P, l'utilisation d'une première zone semiconductrice 2 de type N permet de réduire l'impact électrique des défauts cristallins et des impuretés métalliques également appelés contaminants métalliques tel que par exemple le fer. Il semble que cette
amélioration des caractéristiques électrique peut s'expliquer par la plus faible section de capture efficace pour les trous d'électrons que pour les électrons. In a particular embodiment, the first N-type semiconductor zone 2 has a much greater thickness than the second P-type semiconductor zone 3. In comparison with a solar cell having a P-type first semiconductor zone 2, use of a first N-type semiconductor zone 2 makes it possible to reduce the electrical impact of crystalline defects and metallic impurities, also known as metallic contaminants, such as, for example, iron. It seems that this Improved electrical characteristics can be explained by the lower effective capture section for electron holes than for electrons.
De manière préférentielle, le dispositif photovoltaïque 1 est agencé de manière à ce que le rayonnement à capter pénètre par la deuxième zone semiconductrice 3. Cependant, il est également possible de faire rentrer le rayonnement incident par la face opposée. De manière particulièrement avantageuse, la majeure partie du dispositif photovoltaïque 1 électriquement actif est formée par un matériau dopé de type N ce qui limite l'importance des phénomènes parasites de dégradation sous éclairement et de dégradation de propriété électrique liée aux impuretés métalliques. Dans un mode de réalisation particulier, un substrat initial de type N est fournit puis dopé pour former une zone de type P et la jonction PN associée. Afin de faciliter la formation de la cellule solaire, la zone de type P est moins étendue que la zone de type N dans le substrat initial. Preferably, the photovoltaic device 1 is arranged in such a way that the radiation to be captured enters through the second semiconductor zone 3. However, it is also possible to bring in the incident radiation by the opposite face. Particularly advantageously, most of the electrically active photovoltaic device 1 is formed by an N-type doped material, which limits the importance of parasitic phenomena of degradation under illumination and degradation of electrical property related to metallic impurities. In a particular embodiment, an initial N-type substrate is provided and then doped to form a P-type area and the associated PN-junction. In order to facilitate the formation of the solar cell, the P-type zone is less extensive than the N-type zone in the initial substrate.
Dans un mode de réalisation particulièrement avantageux, la première zone semiconductrice 2 majoritairement de type N est également dopée avec des impuretés dopantes de type P qui sont préférentiellement choisies parmi Ga, Al, In, Ti. La première zone semiconductrice 2 est codopée c'est-à-dire qu'elle comporte des impuretés dopantes de type P et de type N dans des proportions semblables. In a particularly advantageous embodiment, the first predominantly N-type semiconductor zone 2 is also doped with P-type dopant impurities which are preferably selected from Ga, Al, In, Ti. The first semiconductor zone 2 is codoped, that is to say that it comprises P-type and N-type doping impurities in similar proportions.
Dans la première zone semiconductrice 2, la concentration en impuretés dopantes de type P est au moins égale à 20% de la concentration en impuretés dopantes de type N. Les inventeurs ont découvert que ce mode de réalisation permet une diminution de la diffusivité des porteurs minoritaires qui permet de limiter les recombinaisons de porteurs minoritaires. Cet effet se traduit par une augmentation considérable de la durée de vie des porteurs dans le dispositif photovoltaïque ce qui permet d'accroître le rendement de conversion du dispositif. La cellule photovoltaïque formée au moyen de ce
substrat semi-conducteur présente une tension entre les deux faces opposées qui est augmentée en comparaison d'une cellule selon l'art antérieur. A titre d'exemple, lorsque la jonction PN est disposée à proximité de la face avant du substrat, le codopage de la première zone semiconductrice 2 permet de limiter la recombinaison des porteurs minoritaires en face arrière. In the first semiconductor zone 2, the P-type dopant impurity concentration is at least 20% of the concentration of N type doping impurities. The inventors have discovered that this embodiment makes it possible to reduce the diffusivity of the minority carriers. which makes it possible to limit the recombinations of minority carriers. This effect results in a considerable increase in the lifetime of the carriers in the photovoltaic device which increases the conversion efficiency of the device. The photovoltaic cell formed by means of this semiconductor substrate has a voltage between the two opposite faces which is increased in comparison with a cell according to the prior art. By way of example, when the PN junction is disposed near the front face of the substrate, the codopage of the first semiconductor zone 2 makes it possible to limit the recombination of the minority carriers on the rear face.
L'utilisation d'une première zone semiconductrice 2 codopée, c'est-à-dire présentant simultanément des dopants électriques de type P et de type N dans des proportions sensiblement équivalentes est particulièrement avantageuse car elle permet d'accroître le rendement de conversion de la cellule à faible coût. De manière avantageuse, la partie codopée de la première zone semiconductrice 2 s'étend depuis l'interface entre les première et deuxième zones semiconductrices (la jonction PN) jusqu'à la face opposée de la première zone semiconductrice 2 où se situent des prises de contact. Les prises de contact peuvent être réalisées par un ou plusieurs plots métalliques ou par une couche électriquement conductrice. Les prises de contact sont destinées à sortir du courant électrique à partir du dispositif photovoltaïque. A titre d'exemple, les contacts peuvent être disposés en face avant et en face arrière. De manière préférentielle, la deuxième zone semiconductrice 3 est dépourvue d'atomes de bore ou la concentration en atomes de bore est inférieure à 0,02 ppma. Cette particularité permet d'accroître encore plus le rendement du dispositif photovoltaïque. Dans un mode de réalisation particulier, la première zone semiconductrice 2 de type N comporte également des portions dopées 4 et plus
particulièrement des portions plus fortement dopées qui débouchent sur la face arrière du substrat de manière à faciliter le contact électrique du dispositif électrique par la face arrière. Les portions dopées 4 ont une concentration en impuretés dopantes de type P qui est inférieure à 20% de la concentration en impuretés dopantes de type N. De cette manière, il y a à la surface du matériau semi-conducteur des premières portions qui ont une concentration en impuretés dopantes de type P qui est au moins égale à 20% de la concentration en impuretés dopantes de type N et des deuxièmes portions qui ont une concentration en impuretés dopantes de type P qui est inférieure à 20% de la concentration en impuretés dopantes de type N. Il y a donc deux types de portions avec des valeurs de résistivité différentes qui débouchent sur la surface du matériau semi-conducteur. De manière avantageuse, la concentration en dopants de type P est identique dans les deux portions adjacentes de type N. Il est avantageux de réaliser la prise de contact électrique dans les deuxièmes portions 4 car la résistivité est diminuée. The use of a first codoped semiconductor zone 2, that is to say simultaneously having P-type and N-type electrical dopants in substantially equivalent proportions, is particularly advantageous since it makes it possible to increase the conversion efficiency of the cell at low cost. Advantageously, the codoped portion of the first semiconductor zone 2 extends from the interface between the first and second semiconductor zones (the PN junction) to the opposite face of the first semiconductor zone 2 where there are contact. The contacts can be made by one or more metal pads or an electrically conductive layer. The contacts are intended to exit the electrical current from the photovoltaic device. By way of example, the contacts may be arranged on the front face and on the rear face. Preferably, the second semiconductor zone 3 is devoid of boron atoms or the concentration of boron atoms is less than 0.02 ppma. This feature allows to further increase the efficiency of the photovoltaic device. In a particular embodiment, the first N type semiconductor zone 2 also comprises doped portions 4 and more. particularly more heavily doped portions which open on the rear face of the substrate so as to facilitate the electrical contact of the electrical device by the rear face. The doped portions 4 have a P-type dopant impurity concentration which is less than 20% of the N-type dopant impurity concentration. In this way, there are on the surface of the semiconductor material first portions which have a P-type dopant impurity concentration which is at least 20% of the concentration of N-type dopant impurities and second portions which have a concentration of P-type dopant impurities which is less than 20% of the doping impurity concentration of type N. There are therefore two types of portions with different resistivity values that open onto the surface of the semiconductor material. Advantageously, the concentration of P-type dopants is identical in the two adjacent N-type portions. It is advantageous to make electrical contact in the second portions 4 because the resistivity is decreased.
Dans un autre mode de réalisation, la première zone semiconductrice 2 de type N comporte une seule portion dopée 4 qui recouvre toute une surface principale du substrat. La surface opposée de la première portion forme la jonction PN. Dans cette configuration, la structure peut être représentée de la manière suivante P/N/N+. In another embodiment, the first N type semiconductor zone 2 comprises a single doped portion 4 which covers a whole main surface of the substrate. The opposite surface of the first portion forms the PN junction. In this configuration, the structure can be represented as follows P / N / N +.
La portion dopée 4 représente une faible épaisseur de la cellule de sorte que si la proportion en dopants de type P est inférieure à ce qui existe dans la première zone semiconductrice, l'influence est négligeable. Généralement, la portion dopée 4 a une épaisseur inférieure ou égale à 1 micron. The doped portion 4 represents a small thickness of the cell so that if the proportion of P-type dopants is less than what exists in the first semiconductor zone, the influence is negligible. Generally, the doped portion 4 has a thickness less than or equal to 1 micron.
A titre d'exemple, pour une cellule solaire dont la première zone semiconductrice 2 est dopée de type N, quasi exclusivement par du phosphore à une concentration égale à 0,1 ppm, il est avantageux d'avoir un
dopage de type opposé par exemple par du gallium à une concentration au moins égale à 0,02ppma. Cette cellule solaire présente une augmentation de la durée de vie des porteurs minoritaires qui permet un rendement amélioré en comparaison d'une cellule solaire sans dopage de type P de la première zone semiconductrice 2. By way of example, for a solar cell whose first semiconductor zone 2 is N-doped, almost exclusively by phosphorus at a concentration of 0.1 ppm, it is advantageous to have a doping of the opposite type, for example by gallium at a concentration of at least 0.02 ppm. This solar cell has an increase in the lifetime of the minority carriers which allows an improved performance compared to a solar cell without P-type doping of the first semiconductor zone 2.
Cette cellule photovoltaïque particulière présente de bons résultats pour des niveaux de dopages différents, notamment dans la gamme 0,001 -0,01 ppma de phosphore ce qui correspond à une cellule photovoltaïque très faiblement dopée. Des bons résultats ont également été obtenus pour une cellule photovoltaïque ayant une concentration en phosphore comprise entre 0,01 ppma et 0,1 ppma, ce qui correspond à une cellule photovoltaïque moyennement dopée. Des résultats équivalents ont été obtenus pour des cellules photovoltaïques fortement dopées, c'est-à-dire pour une cellule ayant une concentration en phosphore comprise entre 0,1 et 1 ppma. De manière surprenante, une cellule photovoltaïque très fortement dopée a également montré de très bons résultats lorsque la concentration en phosphore dans la première zone semiconductrice est comprise entre 1 et 10ppma. This particular photovoltaic cell has good results for different levels of doping, especially in the range 0.001 -0.01 ppma of phosphorus which corresponds to a photovoltaic cell very slightly doped. Good results have also been obtained for a photovoltaic cell having a phosphorus concentration of between 0.01 ppma and 0.1 ppma, which corresponds to a moderately doped photovoltaic cell. Equivalent results were obtained for highly doped photovoltaic cells, that is to say for a cell having a phosphorus concentration of between 0.1 and 1 ppma. Surprisingly, a very highly doped photovoltaic cell has also shown very good results when the phosphorus concentration in the first semiconductor zone is between 1 and 10 ppm.
Les résultats précédents sont illustrés pour un dopage au phosphore, mais ils peuvent être étendus pour tout autre dopant électronique de type N et pour une combinaison de ces derniers. Il en résulte que cette cellule photovoltaïque particulière peut être mise en œuvre avec du silicium de grade électronique, de grade solaire voire de grade métallurgique purifié. Il devient possible à faible coût d'améliorer le rendement de conversion de la cellule. Alors qu'il est couramment admis que la durée de vie des porteurs minoritaires diminue au fur et à mesure que la concentration en impuretés
électriquement actives augmente, il a été découvert une manière de conserver une durée de vie des porteurs acceptable dans un dispositif photovoltaïque même lorsque la cellule photovoltaïque contient une forte concentration totale en impuretés dopantes. The above results are illustrated for phosphorus doping, but they can be extended for any other N-type dopant and for a combination of these. As a result, this particular photovoltaic cell can be implemented with silicon of electronic grade, solar grade or even purified metallurgical grade. It becomes possible at low cost to improve the conversion efficiency of the cell. While it is commonly accepted that the life of minority carriers decreases as the concentration of impurities increases Electrically active increases, it has been discovered a way to maintain acceptable carrier life in a photovoltaic device even when the photovoltaic cell contains a high total concentration of doping impurities.
La première zone semiconductrice 2 peut être monocristalline ou multicristalline. La deuxième zone semiconductrice 3 peut être également monocristalline ou multicristalline. De manière avantageuse, les deux zones semi-conductrices présentent la même cristallinité. Il est également envisageable d'avoir une des deux zones semi-conductrices à l'état amorphe de manière à former une cellule photovoltaïque à hétérojonction. The first semiconductor zone 2 may be monocrystalline or multicrystalline. The second semiconductor zone 3 may also be monocrystalline or multicrystalline. Advantageously, the two semiconductor zones have the same crystallinity. It is also conceivable to have one of the two amorphous semiconductor zones so as to form a heterojunction photovoltaic cell.
Il est avantageux de former une deuxième zone semiconductrice 3 de type P dont la concentration en dopants de type N est inférieure à 10% de la concentration en dopants de type P. It is advantageous to form a second P-type semiconductor zone 3 whose concentration of N-type dopants is less than 10% of the concentration of P-type dopants.
Là encore, il est avantageux de former une ou plusieurs zones surdopées 5 qui débouchent à la surface de la couche 3 afin de faciliter la prise de contact électrique (figure 1). La zone dopée 5 est de même type de conductivité que la deuxième couche semiconductrice 3, c'est-à-dire que la zone dopée 5 est de type P et avec une résistivité moindre que le reste de la deuxième couche semiconductrice 3. Selon les modes de réalisation utilisés, la zone dopée peut recouvrir toute une face du substrat ou former une ou plusieurs zones. Dans un mode de réalisation particulièrement avantageux, les première et deuxième zones semi-conductrices sont formées dans un même bloc de matériau semi-conducteur afin limiter les interfaces qui réduisent les performances électriques globales du dispositif dans une direction perpendiculaire au champ électrique appliqué. De manière encore plus avantageuse, ce bloc de matériau semi-conducteur est codopé et il est initialement de type N, c'est-à-dire qu'il comporte sur toute son épaisseur un
dopage majoritaire de type N et un dopage minoritaire de type P, la concentration en dopants de type P étant comprise entre 20% et 100% de la concentration en dopants de type N. Une des faces du bloc est ensuite dopée de manière à former la jonction PN, la deuxième zone semiconductrice 3 et la première zone semiconductrice 2. De cette manière, la concentration en impuretés dopantes de type P est identique dans les premières et deuxième portions ce qui rend plus facile la maîtrise du champ électrique induit dans le dispositif photovoltaïque. Again, it is advantageous to form one or more overdoped areas 5 which open to the surface of the layer 3 to facilitate electrical contact (FIG. 1). The doped zone 5 is of the same conductivity type as the second semiconductor layer 3, that is to say that the doped zone 5 is of the P type and with a lower resistivity than the rest of the second semiconductor layer 3. Embodiments used, the doped area may cover an entire face of the substrate or form one or more areas. In a particularly advantageous embodiment, the first and second semiconductor zones are formed in the same block of semiconductor material in order to limit the interfaces which reduce the overall electrical performance of the device in a direction perpendicular to the applied electric field. Even more advantageously, this block of semiconductor material is codoped and is initially N-type, that is to say that it comprises over its entire thickness a N-type majority doping and P-type minority doping, the concentration of P-type dopants being between 20% and 100% of the N-type dopant concentration. One of the faces of the block is then doped to form the PN junction, the second semiconductor zone 3 and the first semiconductor zone 2. In this way, the concentration of P-type dopant impurities is identical in the first and second portions, which makes it easier to control the induced electric field in the photovoltaic device. .
La cellule photovoltaïque comporte une pluralité de plots formés sur une des faces du substrat ou sur les deux faces opposées du substrat et configurés pour connecter la cellule avec l'extérieur.
The photovoltaic cell comprises a plurality of pads formed on one of the faces of the substrate or on the two opposite faces of the substrate and configured to connect the cell with the outside.
Claims
1. Dispositif photovoltaïque comportant : Photovoltaic device comprising:
- une première zone semiconductrice (2) de type N à base de silicium dopé, a first N-type semiconductor zone (2) based on doped silicon,
- une deuxième zone semiconductrice (3) de type P à base de silicium dopé et configurée pour former une jonction PN ou PIN avec la première zone semiconductrice (2), a second semiconductor region (3) of P-type doped silicon and configured to form a PN or PIN junction with the first semiconductor zone (2),
dispositif caractérisé en ce que la première zone semiconductrice (2) comporte une concentration en impuretés dopantes de type P qui est au moins égale à 20% de la concentration en impuretés dopantes de type N. characterized in that the first semiconductor zone (2) has a P-type dopant impurity concentration which is at least 20% of the N-type dopant impurity concentration.
2. Dispositif selon la revendication 1 , caractérisé en ce que la première zone semiconductrice (2) de type N est dopée par au moins une première impureté dopante choisie parmi Ga, In, Al, Ti, la première zone semiconductrice (2) de type N étant dépourvue de bore. 2. Device according to claim 1, characterized in that the first N-type semiconductor zone (2) is doped with at least a first doping impurity chosen from Ga, In, Al, Ti, the first semiconductor zone (2) of type N being free of boron.
3. Dispositif selon l'une des revendications 1 et 2, caractérisé en ce que la première zone semiconductrice (2) de type N est dopée par au moins une deuxième impureté dopante choisie parmi P, As, Sb, Li. 3. Device according to one of claims 1 and 2, characterized in that the first N-type semiconductor zone (2) is doped with at least one second dopant impurity selected from P, As, Sb, Li.
4. Dispositif selon l'une quelconque des revendications 1 à 3, caractérisé en ce qu'il comporte un élément monobloc semi-conducteur à l'intérieur duquel sont formés la première zone semiconductrice (2) de type N et la deuxième zone semiconductrice (3) de type P. 4. Device according to any one of claims 1 to 3, characterized in that it comprises a semiconductor monoblock element inside which are formed the first N-type semiconductor zone (2) and the second semiconductor zone ( 3) type P.
5. Dispositif selon l'une quelconque des revendications 1 à 4, caractérisé en ce que la première zone semiconductrice (2) de type N comporte une ou plusieurs premières portions (2) débouchant sur une surface et ayant une concentration en impuretés dopantes de type P est au moins égale à 20% de
la concentration en impuretés dopantes de type N et une ou plusieurs deuxièmes portions (4) dopées débouchant sur ladite surface et ayant une concentration en impuretés dopantes de type P inférieure à 20% de la concentration en impuretés dopantes de type N. 5. Device according to any one of claims 1 to 4, characterized in that the first N-type semiconductor zone (2) comprises one or more first portions (2) opening onto a surface and having a concentration of dopant impurities of type P is at least 20% of the concentration of N-type dopant impurities and one or more second doped portions (4) opening onto said surface and having a P-type dopant impurity concentration of less than 20% of the N-type dopant impurity concentration.
6. Dispositif selon la revendication 5, caractérisé en ce que la concentration en impuretés dopantes de type P est identique dans les premières et deuxième portions (2, 4).
6. Device according to claim 5, characterized in that the concentration of dopant impurities type P is identical in the first and second portions (2, 4).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1201382A FR2990563B1 (en) | 2012-05-11 | 2012-05-11 | SOLAR CELL BASED ON D-TYPE SILICON DOPE |
| PCT/FR2013/000056 WO2013167815A1 (en) | 2012-05-11 | 2013-02-28 | Solar cell containing n-type doped silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2847801A1 true EP2847801A1 (en) | 2015-03-18 |
Family
ID=48083450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP13715266.6A Withdrawn EP2847801A1 (en) | 2012-05-11 | 2013-02-28 | Solar cell containing n-type doped silicon |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20150136211A1 (en) |
| EP (1) | EP2847801A1 (en) |
| JP (1) | JP2015516115A (en) |
| CN (1) | CN104471725B (en) |
| FR (1) | FR2990563B1 (en) |
| PH (1) | PH12014502439A1 (en) |
| SG (1) | SG11201407151UA (en) |
| TW (1) | TW201403836A (en) |
| WO (1) | WO2013167815A1 (en) |
Citations (2)
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|---|---|---|---|---|
| DE102005061820A1 (en) * | 2005-12-23 | 2007-07-05 | Infineon Technologies Austria Ag | Solar cell manufacturing method, involves implanting protons in semiconductor body such that number of defective areas is formed, and forming n-doped emitter that is attached to semiconductor regions |
| EP2442368A2 (en) * | 2010-10-18 | 2012-04-18 | Lg Electronics Inc. | Semiconductor substrate for solar cell and solar cell |
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| JPS55153371A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Manufacturing method of complementary mis semiconductor device |
| JPS63244887A (en) * | 1987-03-31 | 1988-10-12 | Sharp Corp | Amorphous solar cell |
| JPH07263728A (en) * | 1994-03-23 | 1995-10-13 | Fuji Electric Corp Res & Dev Ltd | Manufacture of thin film solar cell |
| JP3386101B2 (en) * | 1996-08-29 | 2003-03-17 | シャープ株式会社 | Method for manufacturing semiconductor device |
| JP3394408B2 (en) * | 1997-01-13 | 2003-04-07 | 株式会社リコー | Semiconductor device and manufacturing method thereof |
| US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
| WO2000073542A1 (en) * | 1999-05-28 | 2000-12-07 | Shin-Etsu Handotai Co., Ltd. | CZ SINGLE CRYSTAL DOPED WITH Ga AND WAFER AND METHOD FOR PRODUCTION THEREOF |
| JP2004221149A (en) * | 2003-01-10 | 2004-08-05 | Hitachi Ltd | Manufacturing method of solar cell |
| US20060043531A1 (en) * | 2004-08-27 | 2006-03-02 | Varian Semiconductor Equipment Associates, Inc. | Reduction of source and drain parasitic capacitance in CMOS devices |
| FR2929960B1 (en) * | 2008-04-11 | 2011-05-13 | Apollon Solar | PROCESS FOR PRODUCING CRYSTALLINE SILICON OF PHOTOVOLTAIC QUALITY BY ADDING DOPING IMPURITIES |
| DE102008030693A1 (en) * | 2008-07-01 | 2010-01-14 | Institut Für Solarenergieforschung Gmbh | Heterojunction solar cell with absorber with integrated doping profile |
| JP5414298B2 (en) * | 2009-02-13 | 2014-02-12 | 信越化学工業株式会社 | Manufacturing method of solar cell |
| KR20110128619A (en) * | 2010-05-24 | 2011-11-30 | 삼성전자주식회사 | Solar cell and method of fabricating the same |
| US8110431B2 (en) * | 2010-06-03 | 2012-02-07 | Suniva, Inc. | Ion implanted selective emitter solar cells with in situ surface passivation |
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2012
- 2012-05-11 FR FR1201382A patent/FR2990563B1/en active Active
-
2013
- 2013-02-28 JP JP2015510852A patent/JP2015516115A/en active Pending
- 2013-02-28 SG SG11201407151UA patent/SG11201407151UA/en unknown
- 2013-02-28 US US14/400,690 patent/US20150136211A1/en not_active Abandoned
- 2013-02-28 CN CN201380024709.9A patent/CN104471725B/en not_active Expired - Fee Related
- 2013-02-28 EP EP13715266.6A patent/EP2847801A1/en not_active Withdrawn
- 2013-02-28 WO PCT/FR2013/000056 patent/WO2013167815A1/en active Application Filing
- 2013-05-09 TW TW102116496A patent/TW201403836A/en unknown
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2014
- 2014-10-30 PH PH12014502439A patent/PH12014502439A1/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005061820A1 (en) * | 2005-12-23 | 2007-07-05 | Infineon Technologies Austria Ag | Solar cell manufacturing method, involves implanting protons in semiconductor body such that number of defective areas is formed, and forming n-doped emitter that is attached to semiconductor regions |
| EP2442368A2 (en) * | 2010-10-18 | 2012-04-18 | Lg Electronics Inc. | Semiconductor substrate for solar cell and solar cell |
Non-Patent Citations (1)
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201403836A (en) | 2014-01-16 |
| US20150136211A1 (en) | 2015-05-21 |
| FR2990563B1 (en) | 2014-05-09 |
| CN104471725A (en) | 2015-03-25 |
| WO2013167815A1 (en) | 2013-11-14 |
| PH12014502439A1 (en) | 2015-01-26 |
| SG11201407151UA (en) | 2014-12-30 |
| JP2015516115A (en) | 2015-06-04 |
| CN104471725B (en) | 2017-05-17 |
| FR2990563A1 (en) | 2013-11-15 |
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