EP2810058A4 - Radiation detecting panel - Google Patents

Radiation detecting panel

Info

Publication number
EP2810058A4
EP2810058A4 EP12867455.3A EP12867455A EP2810058A4 EP 2810058 A4 EP2810058 A4 EP 2810058A4 EP 12867455 A EP12867455 A EP 12867455A EP 2810058 A4 EP2810058 A4 EP 2810058A4
Authority
EP
European Patent Office
Prior art keywords
radiation detecting
detecting panel
panel
radiation
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12867455.3A
Other languages
German (de)
French (fr)
Other versions
EP2810058A1 (en
Inventor
Seung Ik Jun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2012/023171 external-priority patent/WO2012103550A2/en
Application filed by Individual filed Critical Individual
Publication of EP2810058A1 publication Critical patent/EP2810058A1/en
Publication of EP2810058A4 publication Critical patent/EP2810058A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
EP12867455.3A 2012-01-30 2012-07-30 Radiation detecting panel Withdrawn EP2810058A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/US2012/023171 WO2012103550A2 (en) 2011-01-28 2012-01-30 Radiation detecting panel
PCT/US2012/048907 WO2013115841A1 (en) 2012-01-30 2012-07-30 Radiation detecting panel

Publications (2)

Publication Number Publication Date
EP2810058A1 EP2810058A1 (en) 2014-12-10
EP2810058A4 true EP2810058A4 (en) 2015-08-19

Family

ID=48905965

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12867455.3A Withdrawn EP2810058A4 (en) 2012-01-30 2012-07-30 Radiation detecting panel

Country Status (3)

Country Link
EP (1) EP2810058A4 (en)
KR (2) KR101415226B1 (en)
WO (1) WO2013115841A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102619971B1 (en) * 2016-10-24 2023-12-29 엘지디스플레이 주식회사 Digital x-ray detector and method of fabricating thereof
KR102517730B1 (en) * 2017-12-27 2023-04-03 엘지디스플레이 주식회사 Digital x-ray detector panel and the x-ray system including the same
KR102674957B1 (en) * 2019-05-29 2024-06-12 엘지디스플레이 주식회사 Thin film transistor array substrate for digital x-ray detector and the digital x-ray detector including the same and the manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165561A (en) * 2002-11-15 2004-06-10 Canon Inc Photoelectric transducer
US20090152563A1 (en) * 2007-12-17 2009-06-18 Mitsubishi Electric Corporation Photo-sensor and manufacturing method for photo-sensor
EP2086006A2 (en) * 2008-01-29 2009-08-05 FUJIFILM Corporation Electromagnetic wave detecting element
CN102157533A (en) * 2011-01-18 2011-08-17 江苏康众数字医疗设备有限公司 Amorphous silicon image sensor with storage capacitor structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7214945B2 (en) 2002-06-11 2007-05-08 Canon Kabushiki Kaisha Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system
US7634061B1 (en) * 2004-03-26 2009-12-15 Nova R & D, Inc. High resolution imaging system
JP5280671B2 (en) * 2006-12-20 2013-09-04 富士フイルム株式会社 Image detector and radiation detection system
US7809006B2 (en) 2007-08-16 2010-10-05 D. E. Shaw Research, Llc Routing with virtual channels
KR100840091B1 (en) 2007-08-17 2008-06-20 삼성에스디아이 주식회사 Organic light emitting display device and mother substrate of the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165561A (en) * 2002-11-15 2004-06-10 Canon Inc Photoelectric transducer
US20090152563A1 (en) * 2007-12-17 2009-06-18 Mitsubishi Electric Corporation Photo-sensor and manufacturing method for photo-sensor
EP2086006A2 (en) * 2008-01-29 2009-08-05 FUJIFILM Corporation Electromagnetic wave detecting element
CN102157533A (en) * 2011-01-18 2011-08-17 江苏康众数字医疗设备有限公司 Amorphous silicon image sensor with storage capacitor structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2013115841A1 *

Also Published As

Publication number Publication date
KR101358849B1 (en) 2014-02-05
KR20130098136A (en) 2013-09-04
KR101415226B1 (en) 2014-07-04
WO2013115841A1 (en) 2013-08-08
EP2810058A1 (en) 2014-12-10
KR20130098137A (en) 2013-09-04

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