EP2789019B1 - Photovoltaische einrichtung umfassend eine photovoltaische zelle mit elektrischen anschlusselementen - Google Patents

Photovoltaische einrichtung umfassend eine photovoltaische zelle mit elektrischen anschlusselementen Download PDF

Info

Publication number
EP2789019B1
EP2789019B1 EP12806247.8A EP12806247A EP2789019B1 EP 2789019 B1 EP2789019 B1 EP 2789019B1 EP 12806247 A EP12806247 A EP 12806247A EP 2789019 B1 EP2789019 B1 EP 2789019B1
Authority
EP
European Patent Office
Prior art keywords
metal
electrical
backside
cell
electrical connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP12806247.8A
Other languages
English (en)
French (fr)
Other versions
EP2789019A1 (de
Inventor
Marty W. Degroot
Lindsey A. Clark
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
Original Assignee
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Global Technologies LLC filed Critical Dow Global Technologies LLC
Publication of EP2789019A1 publication Critical patent/EP2789019A1/de
Application granted granted Critical
Publication of EP2789019B1 publication Critical patent/EP2789019B1/de
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • This invention relates generally to interconnected photovoltaic cells and modules and particularly to an improved approach to maintaining good interconnect performance throughout useful life of the cells or module.
  • Photovoltaic cells typically comprise a photoactive portion that converts light energy to electricity. On the backside of these cells is found a backside electrode and on the front side another electrical collection system. It is common for these cells to be connected in series by multiple thin interconnect wires or ribbons that contact the front side of a first cell and the back side on an adjacent cell to form a string of solar cells.
  • One common interconnect configuration employs flat wire ribbons that connect to the top electrical collection system of one cell, typically on a buss line that is part of an electrically conductive grid deposited on the top electrode of the cell. The flat wire ribbon is then extended to contact the backside electrode of an adjacent cell. This configuration is commonly referred to as 'string & tab'.
  • an electrically conductive adhesive (ECA) or solder is used to attach the interconnect ribbon to the front and back sides of the adjacent cells.
  • interconnect configurations are commonly used with both rigid and flexible photovoltaic cells such as copper chalcogenide type cells (e.g. copper indium gallium selenides, copper indium selenides, copper indium gallium sulfides, copper indium sulfides, copper indium gallium selenides sulfides, etc.), amorphous silicon cells, crystalline silicon cells, thin-film III-V cells, organic photovoltaics, nanoparticle photovoltaics, dye sensitized solar cells, and combinations of the like.
  • copper chalcogenide type cells e.g. copper indium gallium selenides, copper indium selenides, copper indium gallium sulfides, copper indium sulfides, copper indium gallium selenides sulfides, etc.
  • amorphous silicon cells e.g. copper indium gallium selenides, copper indium gallium sulfides, copper indium sulfides, copper indium gallium selenides sul
  • WO 2009/097161 teaches strings of cells that are electrically joined by conductive tabs or ribbons adhered with an electrically conductive adhesive on the front and back of adjacent cells and further teaches that the back of the substrate can be coated with a layer of Mo or Cr/Mo. WO 2009/097161 further teaches that the thermal expansion coefficient of the ribbon material should be less than 20% different versus that of the substrate in order to avoid expansion coefficient mismatch that may lead to failure.
  • Typical examples of interconnect ribbons used in this type of application include metal ribbons that are coated with Sn or a Sn/Ag alloy.Other examples of approaches to interconnection include US 2009/0266398 , US 2009/0260675 , U.S.
  • the present inventors have discovered that electrical contacts in the interconnected cell string are susceptible to increased electrical resistance after environmental exposure. The inventors have further discovered that such increase in resistance can be avoided or substantially reduced by proper selection of metal elements used in the interconnected cell string.
  • the invention is a photovoltaic article comprising:
  • the present invention requires that the surfaces of the electrically conductive components of the electrical collection and interconnection system of the inventive photovoltaic article be selected to minimize or eliminate the galvanic corrosion potential in the system.
  • the electrical collection and interconnection system of typical solar cells known in the art are typically designed with metals that are dissimilar enough to be favorable for galvanic corrosion to occur. That is, the standard electric potential, or standard electrode potential (herein referred to as electric potential) of the two interfacing materials is significantly different such that galvanic corrosion may be possible or even favorable.
  • the standard electrode potential of a given material is the measure of individual potential of a reversible electrode under standard conditions relative to the standard calomel electrode (SCE).
  • the electrical interconnection of crystalline silicon solar cells within a photovoltaic module is made by soldering of tin coated ribbons to a Ag containing screen-printed busbar.
  • the backside electrical connection of thin film cells consists of a Sn coated interconnect ribbon in electrical contact with a stainless steel or Mo back contact.
  • the galvanic corrosion potential of the Mo/Sn or Ag/Sn system may be greater than about 0.2V and may lead to galvanic corrosion at the interfaces.
  • the electric potential of the materials used in exposed metal surfaces in the photovoltaic article of this invention are each within 0.1 V, preferably within 0.05 V, of the electric potential of the materials used in the other exposed metal surfaces to which they are electrically connected.
  • the metal surfaces are made of the same metal or same metal alloy. Standard electric potential values for several metals and alloys may be found from several sources such as the CRC Handbook of Chemistry and Physics or ASTM G82-98.
  • the invention may be a single cell with the outer surface of the backside electrode, and the outer surface of the electrical connection elements being made of materials having a difference in electric potential of 0.1 V, preferably 0.05 V, or less.
  • the front side electrical collection system also is a metal or metal alloy having an outer surface made from a material having an electric potential within 0.1 V, preferably 0.05 V, of the materials used in the outer surface of the backside electrode and the outer surface of the electrical connectioni elements.
  • the electrical connection elements are joined to at least one of the backside electrode or the frontside electrical collection system using an electrically conductive adhesive.
  • adhesives comprise metal particles in a polymeric matrix.
  • the metal particles are selected such that the metal or metal alloy comprising their outer surface has an electric potential within 0.1V preferably 0.05 V, of the materials used on the other elements (backside electrode surface, electrical connection elements, and, optionally, front side electrical collection system).
  • the invention comprises at least two cells located adjacent to one another where the electrical connection element joine to the the front side electrical collection system of one cell is joined to the backside electrode of the adjacent cell.
  • the metals in each of the exposed metal components is the same as that used in the other exposed metal components.
  • Fig. 1 shows a frontside view of an exemplary embodiment of the photovoltaic article of this invention in this case showing two adjacent photovoltaic cells 11.
  • Fig. 2 shows a cross section at the location of two interconnected cells.
  • Each cell has a backside electrode 14 and a frontside electrical collection system, in this case shown as a collection grid 12 consisting of a series of thin wires or electrically conductive material serving as an electrical collector, located on a frontside transparent electrical contact 26 (region between the grid 12).
  • the frontside electrical collector can extend beyond the edge of the first cell to contact the backside of the second cell.
  • the electrical collection system also serves as the cell to cell electrical connector. This approach is not shown in Figs.1 and 2 .
  • a separate electrical connection element (also referred to herein as interconnect element) 13, in this case a conductive ribbon, is provided to connect the frontside electrical collection system 12 of the first cell to the backside electrode 14 of the second cell.
  • the conductive ribbon(s) may be substituted for thin wires or wire mesh, in each case comprising of or being coated or plated with an appropriate metallurgy consistent with the abovementioned invention.
  • An electrically conductive bonding element, such as electrically conductive adhesives (ECA) 15 and 16 can be used to adhere the interconnect element 13 to the front and backside electrodes of the cell. Additional cells may be added to form a string of the length desired; the terminal cells will have electrical leads (not shown) provided to enable connection of the cell into a more complex array (formed by modules made of the subject string) or to an electric service system.
  • the collection grid 12, interconnect elements 13, backside electrode 14 and the conductive adhesives 15 and 16, together make up the electrical collection and interconnection system of the solar cell string or module.
  • the surfaces of the electrically conductive components 12-16 of the electrical collection and interconnection system are metal components with electrical potential values that are separated by less than 0.1V, preferably less than 0.05 V, and most preferably are the same metal or same metal alloy. In this fashion, this interconnect configuration reduces or eliminates the potential for galvanic corrosion at interfaces between dissimilar metals used in the components 12-16.
  • the electrical connection element and back surface of the backside electrode may be entirely a single metal or may be all plated with similar metals.
  • the weld material or the surface metal of the conductive particles in the ECA should be selected to correspond to the materials in the electrical connection element and back surface of the backside electrode.
  • the backside electrode and electrical connection elements may be plated with silver.
  • any metallic frontside electrical collection system 12 should also be silver or silver plated, or be comprised of silver particles, and conductive particles in any ECA 15 or 16 should be silver or weld material should be silver.
  • a conductive patch is used over the contact between the electrical connection element and the backside electrode, that patch also preferably comprises the same metallurgy. Discussion of materials below should be read in the context of understanding that selection should be made such that all exposed metals are the same, or have electrical potential differences less than 0.1 V.
  • the backside electrode 14 will comprise a conductive substrate layer of metal foils or films or will be such a foil, film or a metal paste or coating on a nonconductive or conductive substrate.
  • Suitable materials include, but are not limited to metal foils or films of stainless steel, aluminum, titanium or molybdenum. Stainless steel and titanium are preferred.
  • the backside electrode structure including the substrate is flexible.
  • the conductive substrate layer can be coated with optional backside electrical contact regions on one or both sides. Such regions may be formed from a wide range of electrically conductive materials, including one or more of Cu, Mo, Ag, Al, Cr, Ni, Ti, Ta, Nb, W combinations of these, and the like. Conductive compositions incorporating Mo may be used in an illustrative embodiment.
  • the backside surface of the backside electrode is plated with the metal used in the electrical connection element.
  • this metal is silver.
  • the backside electrode of the cell may become contaminated with elements that are used in the cell manufacturing process.
  • the backside electrode may be directly plated with the metal used in the electrical connection element, or an additional process to eliminate the backside contaminants may be carried out.
  • Options include plasma treatment or mechanical cleaning of the back surface prior to deposition of the metal used in the electrical connection element. The inventors have found that a plasma treatment process may also be useful in improving the initial resistance of the backside electrical contact.
  • the photovoltaic cells 11 used in this invention comprise as a photoactive layer a layer of IB-IIIA-chalcogenide, such as IB-IIIA-selenides, IB-IIIA-sulfides, or IB-IIIA-selenide sulfides. More specific examples include copper indium selenides, copper indium gallium selenides, copper gallium selenides, copper indium sulfides, copper indium gallium sulfides, copper gallium sulfides, copper indium sulfide selenides, copper gallium sulfide selenides, and copper indium gallium sulfide selenides (all of which are referred to herein as CIGSS).
  • IB-IIIA-chalcogenide such as IB-IIIA-selenides, IB-IIIA-sulfides, or IB-IIIA-selenide sulfides. More specific examples include copper indium selenides, copper indium gallium seleni
  • the copper indium selenides and copper indium gallium selenides are preferred.
  • This layer may be called the absorber layer.
  • the absorber may be formed by any suitable method using a variety of one or more techniques such as evaporation, sputtering, electrodeposition, spraying, and sintering ( Dhere, Solar Energy Materials & Solar Cells 90 (2006) 2181-2190 .)
  • CIGSS cells usually include additional electroactive layers such as one or more of emitter (buffer) layers, conductive layers (e.g. transparent conductive layer used on the top side) and the like as is known in the art to be useful in CIGSS based cells are also contemplated herein.
  • the emitter or buffer layer is an n-type semiconductor, such as for example CdS, that forms a pn junction with the absorber.
  • buffer layers such as CdS layers can be formed on various substrates by chemical bath deposition, physical vapor deposition or sputtering. See e.g. Abou-Ras et al (Thin Solid Films 480-481 (2005) 118-123 ) and 5,500,055 . Cells with no buffer or alternative materials for buffer are also known and can be used in this invention.
  • An optional window region which may be a single layer or formed from multiple sublayers via techniques including sputtering and MOCVD, can help to protect against shunts. This region also may protect the buffer region during subsequent deposition of the transparent conductive layer which serves as part or all of the frontside electrical collection system.
  • the window region may be formed from a wide range of materials and often is formed from a resistive, transparent oxide such as an oxide of Zn, In, Cd, Sn, combinations of these and the like.
  • An exemplary window material is intrinsic ZnO. ( Cooray et. al.
  • a typical window region may have a thickness in the range from about 1 nm to about 200 nm, preferably about 10 nm to about 150 nm, more preferably about 80 to about 120 nm.
  • the cells will have a topside electrical collection system comprising a front electrode, which serves to collect photogenerated electrons from the photoactive region.
  • the transparent topside electrical contact also referred to as TCL
  • the TCL has a thickness in the range from about 10 nm to about 1500 nm, preferably about 100 nm to about 300 nm.
  • the TCL may be a very thin metal film that has transparency to the relevant range of electromagnetic radiation or more commonly is a transparent conductive oxide (TCO).
  • TCO transparent conductive oxide
  • a wide variety of transparent conducting oxides (TCO) or combinations of these may be used. Examples include fluorine-doped tin oxide, tin oxide, indium oxide, indium tin oxide (ITO), aluminum doped zinc oxide (AZO), gallium doped zinc oxide, zinc oxide, combinations of these, and the like (for suvey of TCO matierals, see Gordon, MRS Bull 25 52-57, 2000 ).
  • the TCL region is indium tin oxide.
  • the TCL which may be a single layer or formed from multiple sublayers, are conveniently formed via sputtering or other suitable deposition technique.
  • the transparent conductive layer may not be conductive enough to enable sufficient collection of electrons from the device and serve independently as a frontside electrical collection system.
  • the front electrode region may also comprise an electrical collector 12 (often a grid or mesh of thin wires or lines) formed over the transparent contact layer.
  • the grid region desirably at least includes conductive metals (e.g. as metal particles or wires) such as nickel, copper, silver, gold, aluminum, tin, and the like and/or combinations thereof.
  • the grid comprises silver particles in an organic matrix.
  • these materials are not transparent, in one illustrative embodiment they are deposited as a grid or mesh of spaced apart lines so that the grid occupies a relatively small footprint on the surface (e.g., in some embodiments, the grid occupies about 10% or less, even about 5% or less, or even about 2% or less of the total surface area associated with light capture to allow the photoactive materials to be exposed to incident light).
  • the grid or mesh is selected such that its metallurgy is the same or similar to the backsurface of the backside substrate and to the outer surface of the electrical connectors.
  • the grid region can be formed by one of several known methods including but not limited to screen printing, ink jet printing, electroplating, sputtering, evaporating and the like.
  • the electrical collection system 12 can be applied to the frontside of the cell as a series of thin wires, or a continuous sheet of thin wires, such as a wire mesh.
  • the outer surfaces of the wire or mesh can be coated or plated with silver.
  • the grid electrical collection system may itself extend beyond the top edge of a cell to be contacted with the backside of an adjacent cell thus itself forming the electrical connector.
  • the frontside electrical collection system 12 may be provided in the form of a wire mesh or plurality of thin wires, that extend beyond one edge of the front side of the PV cell.
  • the extended portion of the frontside electrical collection system 12 can be used as the interconnect element 13 to contact the backside electrode of the adjacent cell.
  • Conductive adhesives 15 and 16 can be optionally used to adhere the wires or wire mesh to the TCL 26 and/or the backside electrode. More preferably, as shown in Figs. 1 and 2 additional interconnect element(s) 13 that can be in the form of one or more thin wires or ribbons or wire mesh are provided.
  • the interconnect element(s) 13 contact and make electrical connection to one or both of the transparent contact layer and the electrical collection system 12 of the front electrode region of the cell.
  • the interconnect elements 13 contact and make electrical connection to the backside electrode 14.
  • the interconnect elements are comprised of one or more conductive metals such as Cu, Ag, Sn, Al, Au, Fe:Ni, W, Ti, and the like.
  • the interconnect elements comprise a Cu or Fe:Ni ribbon that is coated with a thin layer of Ag.
  • the interconnect elements connect adjacent cells and can also be used to connect the cells to external circuitry such as terminal bars. In an exemplary embodiment, the interconnect elements are connected to terminal bars at the leading and trailing edges of the interconnected cell assembly.
  • interconnect elements 13 can be applied directly to the topside of the cell, in electrical connection with the TCL 26 and/or the electrical collection system 12, and the backside electrode of an adjacent cell.
  • conductive adhesives 15 and/or 16 can be used to make electrical connections and to ensure that the interconnect elements are well adhered to one or both of the front electrode and backside electrode of the cells.
  • the conductive adhesives 15 and 16 should be comprised of substantially the same metal as the interconnect elements and the electrical contact regions of the the front and backside electrodes, or different materials may be used as long as the electrical potential difference between any two electrically connected components is less than about 0.1 V.
  • the conductive adhesives 15, 16 is an electrically conductive adhesive or solder.
  • conductive material connecting the interconnect elements to both the the front electrode and the backside electrode is an electrically conductive adhesive such as a silver filled epoxy resin.
  • the electrically conductive adhesives may be any such as are known in the industry. Such ECA's are frequently compositions comprising a thermosetting polymer matrix with electrically conductive filler particles.
  • thermosetting polymers include but are not limited to thermoset materials having comprising epoxy, cyanate ester, maleimide, phenolic, anhydride, vinyl, allyl or amino functionalities or combinations thereof.
  • the conductive filler particles may be for example silver, gold, copper, nickel, carbon nanotubes, graphite, tin, tin alloys, bismuth or combinations thereof, Epoxy based ECAs with silver particles are preferred.
  • the conductive filler is selected to be the same or similar to the metals in the backside surface of the backside subrate and the outer surface of the electrical connector elements.
  • the photovoltaic article or interconnected cell assembly may be connected to terminal bars at one or both ends of the string, or at other regions as necessary to connect the module to external circuitry.
  • an interconnect element is connected from the backside electrode of the first photovoltaic cell to a terminal bar at the leading edge of the interconnected assembly, and an interconnect element is also connected from the topside electrode of the last photovoltaic cell to a terminal bar at the trailing edge of the interconnected assembly. It is contemplated that the connection may be created and/or maintained between the interconnect element and the terminal bar via a wide variety of joining techniques including but not limited to welding, soldering, or electrically conductive adhesive.
  • the invention described herein can further be extended to electrical connections of interconnect elements 13 to terminal bars, so that the interconnect elements 13, the terminal bars and any optional adhesives used for electrical connection are comprised of substantially the same metal as the interconnect elements and the electrical contact regions of the the front and backside electrodes, or different materials may be used as long as the electrical potential difference between any two electrically connected components is less than about 0.1 V.
  • the photovoltaic article may further comprise optional encapsulant layers that may perform several functions.
  • the encapsulant layers may serve as a bonding mechanism, helping hold the adjacent layers of the module together. It should also allow the transmission of a desirous amount and type of light energy to reach the photovoltaic cell (e.g. the photoactive portion).
  • the encapsulant layers may also function to compensate for irregularities in geometry of the adjoining layers or translated through those layers (e.g. thickness changes). It also may serve to allow flexure and movement between layers due to environmental factors (e.g. temperature change, humidity, etc.) and physical movement and bending.
  • first encapsulant layer may consist essentially of an adhesive film or mesh, but is preferably a thermoplastic material such as EVA (ethylene-vinyl-acetate), thermoplastic polyolefin or similar material. It is contemplated that the encapsulant layers may be comprised of a single layer or may be comprised of multiple layers (e.g. a first, second, third, fourth, fifth layer, etc. The preferred thickness of this layer can range from about 0.1mm to 1.0mm, more preferably from about 0.2mm to 0.8mm, and most preferably from about 0.25mm to 0.5mm.
  • EVA ethylene-vinyl-acetate
  • Frontside barriers must be selected from transparent or translucent materials. These materials may be relatively rigid or may be flexible. Glass is highly useful as a frontside environmental barrier to protect the active cell components from moisture, impacts and the like.
  • a backside barrier or backsheet may also be used; it is preferably constructed of a flexible material (e.g. a thin polymeric film, a metal foil, a multi-layer film, or a rubber sheet). In a preferred embodiment, the back sheet material may be moisture impermeable and also range in thickness from about 0.05mm to 10.0 mm, more preferably from about 0.1mm to 4.0mm, and most preferably from about 0.2mm to 0.8mm.
  • supplemental barrier sheet which is connectively located below the back sheet. The supplemental barrier sheet may act as a barrier, protecting the layers above from environmental conditions and from physical damage that may be caused by any features of the structure to which the PV device is subjected (e.g. for example, irregularities in a roof deck, protruding objects or the like).
  • the protective layer could be comprised of more rigid materials so as to provide additional roofing function under structural and environmental (e.g. wind) loadings. Additional rigidity may also be desirable so as to improve the coefficient of thermal expansion of the PV device and maintain the desired dimensions during temperature fluctuations.
  • protective layer materials for structural properties include polymeric materials such polyolefins, polyester amides, polysulfone, acetel, acrylic, polyvinyl chloride, nylon, polycarbonate, phenolic, polyetheretherketone, polyethylene terephthalate, epoxies, including glass and mineral filled composites or any combination thereof.
  • a framing material may also be provided to enable attachment of the photovoltaic article to structures such as buildings and to enable and protect electrical interconnects between articles and from articles to other electrical devices. See for example the frame, preferably prepared by injection molding around a laminate structure, to form a building integrated photovoltaic device as shown in WO 2009/137353 .
  • CIGS cells of 100 X 210 mm dimension comprising a silver screen printed grid (electrical collection system) on the topside and a conductive substrate electrode with Mo coated back contact were obtained.
  • the deposited ECA line was approximately 2 mm X 90 mm and was equally applied in three regions on the Ag screen printed buss bars on the topside electrode of the cell.
  • the stencil was removed and a Sn coated metal ribbon was placed on top of each of the ECA dispense regions along the length of the ECA such that one end of the ribbon extended beyond the edge of the cell.
  • a small piece of high temperature polyimide tape was applied at the cell edge under the ribbon to avoid contact of the ribbon with the edge of the cell.
  • a second long piece of high temperature polyimide tape was applied was applied along the length of the ribbon to hold the ribbons in place until the ECA was cured.
  • the deposited ECA line was approximately 2 mm X 75 mm and was equally applied in three regions on the backside electrode of the cell.
  • the stencil was removed and a Sn coated metal ribbon was placed on top of each of the ECA dispense regions along the length of the ECA such that one end of the ribbon extended beyond the edge of the cell.
  • the cells were then laid up into a pre-laminate format in the following order: Glass/polyolefin encapsulant/cell/polyolefin encapsulant/backsheet/polyolefin encapsulant/TPO.
  • the pre-laminate was then laminated in a clamshell type laminator at 150°C. After the laminates were formed, the solar cell laminates were placed into environmental exposure chambers for stability testing.
  • the I-V characteristic measurement apparatus and procedure meet the requirements specified in the IEC 60904 (parts 1 - 10) and 60891 standards. Immediately following this measurement the devices are returned to the ambient heat environment for the next test period. This process is repeated for each time period. For each I-V measurement, electrical contact is established at the electrical connectors attached to the terminal bars at the leading and trailing ends of the electrical assembly. The power is measured by varying the resistive load between open and closed circuit. The maximum power (Pmax) is calculated as the area of the largest rectangle under the current-voltage (I-V) characteristic curve.
  • the series resistance (Rs) is the slope of the line near open-circuit voltage (Voc), not taken from a diode fit.
  • CIGS cells of 100 X 210 mm dimension comprising a Silver screen printed grid (electrical collection system) on the topside and a conductive substrate electrode with Mo coated back contact were obtained.
  • the backside electrode was plated with a thin layer of silver using a sputtering technique.
  • the deposited ECA line was approximately 2 mm X 90 mm and was equally applied in three regions on the Ag screen printed buss bars on the topside electrode of the cell.
  • the stencil was removed and a Ag coated metal ribbon was placed on top of each of the ECA dispense regions along the length of the ECA such that one end of the ribbon extended beyond the edge of the cell.
  • a small piece of high temperature polyimide tape was applied at the cell edge under the ribbon to avoid contact of the ribbon with the edge of the cell.
  • a second long piece of high temperature polyimide tape was applied was applied along the length of the ribbon to hold the ribbons in place until the ECA was cured.
  • the deposited ECA line was approximately 2 mm X 75 mm and was equally applied in three regions on the Ag plated backside electrode of the cell.
  • the stencil was removed and a Ag coated metal ribbon was placed on top of each of the ECA dispense regions along the length of the ECA such that one end of the ribbon extended beyond the edge of the cell.
  • a long piece of high temperature polyimide tape was applied was applied along the length of the ribbon to hold the ribbons in place until the ECA was cured. All interconnect ribbons were 2.5 mm wide and had a thickness of approximately 0.1 mm.
  • the cells were then placed between two pieces of tempered glass and placed in a laboratory oven that was pre-heated to 180°C. The cells were left in the oven for 40 minutes to allow a controlled cure for the ECA. After 40 minutes, the samples were removed from the oven and the polyimide tape was removed from each of the ribbons.
  • the cells were then laid up into a pre-laminate format in the following order: Glass/polyolefin encapsulant/cell/polyolefin encapsulant/backsheet/polyolefin encapsulant/TPO.
  • the pre-laminate was then laminated in a clamshell type laminator at 150°C. After the laminates were formed, the solar cell laminates were placed into environmental exposure chambers for stability testing.

Claims (8)

  1. Ein Photovoltaikartikel, beinhaltend:
    i) eine Photovoltaikzelle (11), beinhaltend
    a. ein elektrisch leitfähiges Substrat, das als eine Rückseitenelektrode (14) für die Photovoltaikzelle dient,
    b. einen photoaktiven Teil auf einer Vorderseite des Substrats, wobei der photoaktive Teil ein IB-IIIA-Chalkogenid beinhaltet, und
    c. ein Vorderseiten-Stromsammelsystem (12) auf der entgegengesetzten Seite des photoaktiven Teils zu dem Substrat,
    wobei die Rückseite des Substrats mit einem Metall plattiert ist, das die Rückseitenfläche des Substrats bildet;
    ii) mindestens ein erstes elektrisches Verbindungselement (13), das eine Außenfläche aufweist, wobei das Element mit einer Rückseitenfläche des Substrats elektrisch verbunden ist;
    iii) mindestens ein zweites elektrisches Verbindungselement (13), das eine Außenfläche aufweist, wobei das Element mit dem Vorderseiten-Stromsammelsystem elektrisch verbunden ist, wobei das Metall, das die Rückseitenfläche des Substrats bildet, jegliche Metallflächen, die Teil des Vorderseiten-Stromsammelsystems sind, und die Außenflächen der elektrischen Verbindungselemente jeweils aus Materialien geformt sind, die elektrische Potentiale aufweisen, die sich um nicht mehr als 0,1 Volt von dem Material unterscheiden, das auf den anderen Flächen verwendet wird.
  2. Artikel gemäß Anspruch 1, wobei das Vorderseiten-Stromsammelsystem ein Metallgitter beinhaltet.
  3. Artikel gemäß einem der Ansprüche 1 und 2, wobei mindestens eines von dem ersten und dem zweiten elektrischen Verbindungselement mit mindestens einer bzw. einem von der Rückseitenfläche oder dem Vorderseiten-Stromsammelsystem unter Verwendung eines elektrisch leitfähigen Klebstoffs (15, 16) zusammengefügt ist, der Metallpartikel in einer Polymermatrix beinhaltet, wobei die Metallpartikel eine Außenfläche aus einem Material mit einem elektrischen Potential aufweisen, das sich um nicht mehr als 0,1 Volt von dem Metall, das die Rückseitenfläche des Substrats bildet, jeglichen Metallflächen, die Teil des Vorderseiten-Stromsammelsystems sind, und den Außenflächen der elektrischen Verbindungselemente unterscheidet.
  4. Artikel gemäß einem der Ansprüche 1-3, wobei mindestens zwei benachbarte derartige Photovoltaikzellen vorliegen und das mindestens eine erste elektrische Verbindungselement, das eine Außenfläche aufweist, mit dem Vorderseiten-Stromsammelsystem der benachbarten Zelle zusammengefügt ist, wobei das Element mit einer Rückseitenfläche des Substrats einer Zelle elektrisch verbunden ist.
  5. Artikel gemäß einem der Ansprüche 1-4, wobei die Rückseitenfläche des Substrats, jegliche Metallflächen, die Teil des Vorderseiten-Stromsammelsystems sind, und die Außenflächen der elektrischen Verbindungselemente jeweils aus demselben Metall oder derselben Metalllegierung hergestellt sind.
  6. Artikel gemäß Anspruch 5, wobei das Metall Silber ist.
  7. Artikel gemäß einem der vorhergehenden Ansprüche, wobei das Vorderseiten-Stromsammelsystem ein Drahtgeflecht beinhaltet, das sich über die Kante der Zelle hinaus erstreckt, um mit der Rückseite einer benachbarten Zelle zusammengefügt zu sein, so dass es als eines des ersten oder des zweiten elektrischen Verbindungselements dient.
  8. Artikel gemäß einem der Ansprüche 1-6, wobei das zweite elektrische Verbindungselement ein oder mehrere Bänder beinhaltet, die sich zu der Rückseite einer benachbarten Zelle erstrecken.
EP12806247.8A 2011-12-08 2012-12-03 Photovoltaische einrichtung umfassend eine photovoltaische zelle mit elektrischen anschlusselementen Not-in-force EP2789019B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161568192P 2011-12-08 2011-12-08
PCT/US2012/067544 WO2013085829A1 (en) 2011-12-08 2012-12-03 Method of forming a photovoltaic cell

Publications (2)

Publication Number Publication Date
EP2789019A1 EP2789019A1 (de) 2014-10-15
EP2789019B1 true EP2789019B1 (de) 2017-02-01

Family

ID=47430081

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12806247.8A Not-in-force EP2789019B1 (de) 2011-12-08 2012-12-03 Photovoltaische einrichtung umfassend eine photovoltaische zelle mit elektrischen anschlusselementen

Country Status (9)

Country Link
US (1) US20150000720A1 (de)
EP (1) EP2789019B1 (de)
JP (1) JP2015503241A (de)
KR (1) KR20140105539A (de)
CN (1) CN103975447B (de)
BR (1) BR112014013491A2 (de)
IN (1) IN2014CN04167A (de)
MX (1) MX336867B (de)
WO (1) WO2013085829A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140000679A1 (en) * 2012-06-28 2014-01-02 Samsung Sdi Co., Ltd. Thin film solar cell module and method of manufacturing the same
US9502596B2 (en) * 2013-06-28 2016-11-22 Sunpower Corporation Patterned thin foil
KR102175893B1 (ko) * 2014-02-24 2020-11-06 엘지전자 주식회사 태양 전지 모듈의 제조 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1333593A (en) * 1971-04-19 1973-10-10 British Aircraft Corp Ltd Solar cell matrices
US4126149A (en) * 1977-06-10 1978-11-21 Tom Swift Enterprises, Inc. Solar energy electrical conversion apparatus
US4698455A (en) * 1986-11-04 1987-10-06 Spectrolab, Inc. Solar cell with improved electrical contacts
JP2974485B2 (ja) 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
US20080011350A1 (en) 1999-03-30 2008-01-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and other optoelectric devices
US7022910B2 (en) 2002-03-29 2006-04-04 Konarka Technologies, Inc. Photovoltaic cells utilizing mesh electrodes
US20070251570A1 (en) 2002-03-29 2007-11-01 Konarka Technologies, Inc. Photovoltaic cells utilizing mesh electrodes
DE10239845C1 (de) 2002-08-29 2003-12-24 Day4 Energy Inc Elektrode für fotovoltaische Zellen, fotovoltaische Zelle und fotovoltaischer Modul
US6936761B2 (en) 2003-03-29 2005-08-30 Nanosolar, Inc. Transparent electrode, optoelectronic apparatus and devices
US7777128B2 (en) 2004-06-01 2010-08-17 Konarka Technologies, Inc. Photovoltaic module architecture
US7732229B2 (en) 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
EP2100336A4 (de) 2006-12-22 2013-04-10 Applied Materials Inc Verbindungstechnologien für rückkontakt-solarzellen und -module
JP5156482B2 (ja) * 2007-05-29 2013-03-06 東レエンジニアリング株式会社 太陽電池モジュール
DE212009000025U1 (de) 2008-01-31 2010-09-23 Global Solar Energy. Inc., Tuscon Dünnschicht-Solarzellen-Abfolge
US20090260675A1 (en) 2008-04-18 2009-10-22 Serkan Erdemli Encapsulation of solar modules
US20090266398A1 (en) 2008-04-28 2009-10-29 Burak Metin Method and Apparatus to Form Back Contacts to Flexible CIGS Solar Cells
AU2009244549B2 (en) 2008-05-05 2013-01-31 Dow Global Technologies Llc Photovoltaic device assembly and method
CN102257628A (zh) * 2008-10-23 2011-11-23 奥塔装置公司 光伏器件的集成
JP5159725B2 (ja) * 2009-08-27 2013-03-13 三洋電機株式会社 太陽電池ストリング及びそれを用いた太陽電池モジュール
EP2348539B1 (de) * 2010-01-19 2019-05-29 SolarWorld Industries GmbH Photoelementelektrode und Verfahren zum elektrischen Anschließen eines Photoelements
JP2012164954A (ja) * 2011-01-20 2012-08-30 Sony Chemical & Information Device Corp 太陽電池モジュール及び太陽電池モジュールの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number Publication date
CN103975447A (zh) 2014-08-06
IN2014CN04167A (de) 2015-07-17
JP2015503241A (ja) 2015-01-29
BR112014013491A8 (pt) 2017-06-13
US20150000720A1 (en) 2015-01-01
KR20140105539A (ko) 2014-09-01
BR112014013491A2 (pt) 2017-06-13
WO2013085829A1 (en) 2013-06-13
EP2789019A1 (de) 2014-10-15
MX2014006842A (es) 2014-08-01
CN103975447B (zh) 2017-04-12
MX336867B (es) 2016-02-04

Similar Documents

Publication Publication Date Title
EP2761674B1 (de) Verbindungsstruktur von solarzellen
EP2950352A2 (de) Verbindungssystem für photovoltaische zellen
EP2614532B1 (de) Verbesserte pv-zellenanordnung
JP5629010B2 (ja) 改良された光起電力セルアセンブリ及び方法
US20150325731A1 (en) Bi-component electrical connector
US20090255565A1 (en) Thin film solar cell string
US20090250109A1 (en) Acrylic pressure sensitive adhesive composition, double coated adhesive sheet, and photovoltaic device
EP2789019B1 (de) Photovoltaische einrichtung umfassend eine photovoltaische zelle mit elektrischen anschlusselementen
KR20150035749A (ko) 배선재, 태양 전지 모듈 및 태양 전지 모듈의 제조 방법
US20140246074A1 (en) Solar module with ribbon cable, and a method for the manufacture of same
WO2013082091A2 (en) Method of forming a photovoltaic cell

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20140708

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20150717

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20160714

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAJ Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR1

GRAL Information related to payment of fee for publishing/printing deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR3

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTC Intention to grant announced (deleted)
INTG Intention to grant announced

Effective date: 20161128

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

Ref country code: AT

Ref legal event code: REF

Ref document number: 866215

Country of ref document: AT

Kind code of ref document: T

Effective date: 20170215

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602012028376

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20170201

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 866215

Country of ref document: AT

Kind code of ref document: T

Effective date: 20170201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170502

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170501

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170601

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20170201

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170601

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170501

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602012028376

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20171103

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20171203

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20171203

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20171203

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20180831

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20171231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180102

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20171203

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20171203

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20171231

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20171231

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20171231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20121203

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170201

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20211012

Year of fee payment: 10

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602012028376

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230701