Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
  • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
  • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
  • H01L21/47635—After-treatment of these layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
  • H10K30/88—Passivation; Containers; Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/805—Electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/84—Passivation; Containers; Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
  • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells

Definitions

• Functional layer substrate comprising a sulfur compound
• the field of the invention is that of substrates comprising a functional layer conferring electrical conduction properties.
• the invention relates to a substrate comprising an electrical conduction functional layer, said functional layer comprising a sulfur-containing interfacial compound.
• the present invention also relates to the processes for manufacturing these substrates as well as to the optoelectronic devices in which these substrates are incorporated.
• organic electroluminescent devices known by the acronym OLED (organic light emitting device), light collecting devices such as organic photovoltaic cells known by the acronym OPV (Organic Photovoltaic) organic thin film transistors known by the acronym OTFT (organic thin-film transistor) or solar cells Grâzel also called photosensitive pigment cells known by the acronym DSSC (Dye Sensitized Solar Cells), preferably, is meant to designate organic electroluminescent devices.
• OLED organic light emitting device
• OPV Organic Photovoltaic cells
• OTFT organic thin-film transistor
• DSSC Dynamic Sensitized Solar Cells
• Substrates comprising a functional layer conferring electrical conduction properties are obtained in particular by magnetron sputtering deposition of said functional layer on a support.
• the use of this type of technique makes it possible to obtain surfaces of low roughness.
• the substrates comprising a functional layer conferring electrical conduction properties used in various optoelectronic devices have a discontinuity in the form of an etching.
• the conductive layer etching is a critical element for the proper functioning of devices made from such structures. This etching makes it possible to delimit the optoelectronic modules and its quality is essential to ensure the preservation of their optical and / or electrical properties.
• the etching can be performed using a laser beam.
• the laser beam is responsible for significant electrical leakage. These leakage currents have the effect of limiting the efficiency performance and the lifetime of the optoelectronic devices.
• OLED Organic Light Emitting Device
• shiny edge phenomena are thus observed under application of a voltage. These phenomena are due to major changes in the nature of the materials used in the conductive functional layer and the topographic modification, in other words thickness, of this by the laser beam. More particularly when said layer is based on a stack comprising one or more dielectric layer / metal layer / dielectric layer successions.
• wet etching solutions are already known for improving the topographic laser etching properties of certain conductive layers, more particularly transparent conductive layers, used in various optoelectronic applications.
• acid-based solutions such as HCl, HBr, etc.
• FeCl 3 and H 2 O are used for the "wet etching" of the functional layer comprising a silver layer.
• Such examples of solutions are described in the articles by Y. Aoshima et al., "Development of silver-based multilayer coating electrodes with low resistance for use in fiât panel displays ", Jpn. J. Appl. Phys., Vol. 39, pp. 4884-4889 (2000) and Y.
• the invention in at least one of its embodiments, also aims to provide a substrate comprising a functional layer comprising at least one metal layer and conferring electrical conduction properties, said layer being discontinuous, the discontinuity being more particularly obtained by a laser engraving.
• the invention also aims to implement a functional layer passivation treatment method comprising at least one metal layer, said functional layer being etched mechanically (for example by scratching) or laser but also to implement a post-treatment after laser etching allowing to reduce not only the graphical topographic damage induced by the action of the laser beam but also leading to the isolation of laser etching edges of the functional layer comprising at least one metal layer.
• the present invention also aims to provide an optoelectronic device incorporating a substrate in accordance with the the present invention, more particularly an organic light-emitting diode or an organic photovoltaic cell.
• the invention relates to a substrate comprising a support, said support comprising on at least one of its main faces, a functional layer conferring electrical conduction properties, said functional layer comprising at least one metal layer.
• such a functional layer has at its extreme surface opposite the support (that is to say the outermost surface of the functional layer relative to the support or the surface of the functional layer furthest from the support), at least one sulfur compound in the form of thio sulfate.
• the general principle of the invention is based on the presence at the extreme surface of the functional layer of at least one sulfur compound in the form of thiosulphate, the presence of said sulfur compound permitting passivation of the surface of the functional layer.
• the invention is based on a completely new and inventive approach to passivation of the functional layer, the inventors having determined that surprisingly the presence of a sulfur compound at the extreme surface allows such passivation.
• Presence of an sulfur compound at the extreme surface is meant a sulfur content expressed as an atomic percentage of at least 0.4% over a thickness of 10 nm, said percentage being measured by spectroscopy of XPS electron photo.
• the support on which the functional layer is deposited is preferably rigid.
• the function of the support is to support and / or protect the functional layer.
• the support comprises at least a total or partial structuring surface on at least one of its faces.
• the structuring of the support comprises at least one of the processes selected from etching, rolling and / or laser etching.
• the chemical etching of the support comprises at least the matting and / or etching (for example by etching with hydrofluoric acid of a silicosodocalcic glass).
• the rolling method comprises at least the step of structuring the substrate by the pressure impression of a pattern using at least one printing roll.
• the substrate may be glass, rigid plastics material (eg organic glass, polycarbonate) or flexible polymeric films (eg polyvinyl butyral (PVB), polyethylene terephthalate (PET), vinyl acetate copolymer and ethylene (EVA)).
• the support is a glass sheet.
• the glasses are mineral or organic.
• the mineral glasses are preferred.
• the clear or colored silicosodocalcic glasses are preferred in the mass or on the surface. More preferably, they are extra clear silicosodocalcic glasses.
• extra clear means a glass containing at most 0.020% by weight of the total Fe glass expressed in Fe 2 0 3 and preferably at most 0.015% by weight.
• the support preferably has a geometric thickness of at least 0.35 mm. By the terms “geometrical thickness”, one understands the average physical thickness.
• layer in the sense of the present invention, it is meant that said layer may consist of a layer of single material or a plurality of layers each of a different material.
• the functional layer may thus be an electrical conduction layer comprising at least one metal layer based on silver, the silver being present in pure form or alloyed with another metal, the pure form being preferred.
• the electrical conduction functional layer comprises at least one silver-based metal layer
• said silver-based metal layer is protected on both sides by at least one oxide or nitride-based layer.
• the other metal preferably comprises at least palladium and / or gold, more preferably palladium.
• the layer functional is a functional layer of electrical conduction comprising at least one metal layer based on silver, said layer also comprises a set of dielectric layers disposed on either side of said silver-based metal layer.
• the silver-based metal layer has a geometric thickness of at least 5.0 nm, preferably at least 9.0 nm.
• the silver-based metal layer has a geometric thickness of at most 25.0 nm, preferably at most 18.0 nm, more preferably at most 14.0 nm.
• the metal layer based on silver has a thickness equal to 12.5 nm.
• the electrical conductivity layer may comprise several silver-based metal layers, preferably two silver-based metal layers, said layers being separated by dielectric layers making the support covered with a functional layer according to the invention. Reflective in a part of the spectrum of solar radiation, in particular in the field of visible lengths.
• sunscreen functional layer the products marketed under the name of "Stopray” by the company AGC and as an example of low-emitting coating products marketed under the term "TopN, TopN +, TopN + T" by the same company.
• the functional electric conduction layer, low emissive or antisolar comprising at least one silver-based metal layer also comprises at least one means of chemical protection of said silver layer.
• chemical protection is intended to denote protection against any phenomenon of chemical degradation of silver (oxidation, diffusion of alkaline ions from the glass sheet, diffusion of silver during quenching heat treatment) .
• these means for example:
• At least one barrier layer said barrier layer being, with respect to the glass sheet, the first layer constituting the functional layer of electrical conduction, low emissive or antisolar.
• the material constituting the barrier layer being selected from titanium oxide, zinc oxide, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon oxycarbonitride, aluminum nitride, aluminum oxynitride, aluminum oxide, this barrier layer being optionally doped or alloyed with tin.
• the barrier layer has a geometric thickness of at least 3.0 nm, preferably at least 10.0 nm, more preferably at least 30.0 nm, even more preferably at least 50.0 nm.
• the barrier layer has a thickness of at most 100 nm.
• At least one sacrificial layer the sacrificial layer being located on at least one face of the silver-based metal layer.
• sacrificial layer is meant a layer that can be oxidized in whole or in part. This layer makes it possible to avoid deterioration of the silver layer, in particular by oxidation.
• the sacrificial layer comprises at least one compound chosen from metals, nitrides, oxides and sub-stoichiometric oxygen oxides.
• the metals, nitrides, oxides and sub-stoichiometric metal oxides comprise at least one element selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu, Zn, Al.
• the sacrificial layer comprises at least Ti, TiO x (with x ⁇ 2) or NiCr.
• the thickness of the sacrificial layer is at least 0.5 nm.
• the thickness of the sacrificial layer is at most 6.0 nm. More preferably, the thickness is between 1.0 and 2.5 nm.
• a sacrificial layer is deposited on the face of the silver metal layer furthest away from the support.
• the substrate according to the invention is such that the functional layer of electrical conduction comprises a thin layer of uniformity of the surface electrical properties, said uniformization layer being the furthest layer of the support within of the diaper functional.
• the main function of the uniformization layer is to obtain a uniform charge transfer over the entire surface of the functional layer. This uniform transfer results, when the conductive functional layer is used as an electrode in an OLED device, by an equivalent emitted or converted light flux at any point on the surface. It also increases the life of optoelectronic devices since this transfer is the same at each point, eliminating possible hot spots.
• the uniformization layer has a geometric thickness of at least 0.5 nm, preferably at least 1.0 nm.
• the uniformity layer has an angular frequency of at most 5.0 nm, preferably at most 2.5 nm, more preferably at most 2.0 nm. More preferably, the uniformization layer is equal to 1.5 nm.
• the uniformization layer comprises at least one layer comprising at least one inorganic material selected from a metal, a nitride, an oxide, a carbide, an oxynitride, an oxycarbide, a carbonitride, an oxycarbonitride and the mixtures of at least two of them.
• the inorganic material of the uniformization layer comprises a single metal or a mixture of metals.
• the generic term "metal mixture” refers to combinations of two or more metals in the form of an alloy or a doping of at least one metal with at least one other metal.
• the uniformization layer comprises at least those belonging to columns 1, 2, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 of the table of the periodic table of elements in its version published by IUPAC, June 22, 2007.
• the metal and / or metal mixture comprises at least one element selected from Li, Na, K, Rb, Mg, Ca, Sr, Ba, Ti, Zr, Hf, V, Nb.
• the metal or the mixture of metals comprises at least one element selected from C, Ti, Zr, Hf, V, Nb, Ta, Ni, Cr, Al, Zn.
• the metal mixture preferably comprises Ni-Cr and / or Zn doped with Al.
• the inorganic material of the uniformization layer is present in the form of at least one chemical compound selected from carbides, carbonitrides, oxynitrides, oxycarbides, oxycarbonitrides and mixtures of at least two of them.
• the oxynitrides, oxycarbides and oxycarbonitrides of the uniformization layer may be in non-stoichiometric form, preferably substoichiometric with respect to oxygen.
• Carbides, carbonitrides, oxynitrides, oxycarbides and oxycarbonitrides are carbides, carbonitrides, oxynitrides, oxycarbides and oxycarbonitrides of at least one element selected from those belonging to columns 2, 4, 6, 7, 8, 9, 10, 11, 12, 13, 14 of the table of the periodic table of the elements in its version published by IUPAC, on June 22, 2007.
• these are carbides, carbonitrides, oxynitrides, oxycarbures, oxycarbonitrides of at least one element selected from Ti , Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Co, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Si.
• the uniformizing thin film comprises at least one oxynitride comprising at least one element selected from Ti, Zr, Cr, Mo, W, Mn, Co, Ni, Pd, Pt, Cu, Ag, Au. , Zn, C d, Al, S i.
• the thin film of uniformity of the electrical properties of surface comprises at least one oxynitride selected from Ti oxynitride, Zr oxynitride, Ni oxynitride, NiCr oxynitride.
• the inorganic material of the uniformization layer is present in the form of at least one metal nitride of at least one element selected from those belonging to columns 4, 5, 6, 7, 8 , 9, 10, 1 1, 12, 13, 14 of the table of the periodic table of elements in its version published by IUPAC, on June 22, 2007.
• the standardization layer comprises at least one nitride of a element selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Co, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Si.
• the nitride comprises at least one element selected from Ti, Zr, Hf, V, Nb, Ta, Ni, Cr, Al, Zn. More preferably, the thin film of uniformity of the surface electrical properties comprises at least Ti nitride, Zr nitride, Ni nitride, NiCr nitride.
• the inorganic material of the uniformization layer is present in the form of at least one metal oxide of at least one element selected from those belonging to columns 4, 5, 6, 7, 8 , 9, 10, 1 1, 12, 13, 14 of the table of the periodic table of elements in its version published by IUPAC, on June 22, 2007.
• the uniformization layer comprises at least one oxide of a element selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Co, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, In, Si, Sn. More preferably, the oxide comprises at least one element selected from Ti, Zr, Hf, V, Nb, Ta, Ni, Cr, Al, In, Sn, Zn.
• the oxide of the uniformization layer may be an oxide under stoichiometric oxygen.
• the oxide optionally comprises at least one doping element.
• the doping element is selected from at least one of the elements selected from Al, Ga, In, Sn, Sb, and F.
• the thin film of uniformity of the electrical properties of surface comprises at least the Ti oxide and / or the Zr oxide and / or the Ni oxide and / or the NiCr oxide and / or ⁇ and / or the doped Sn oxide, the dopant being at least one element selected from F and Sb, and / or doped Zn oxide, the dopant being at least one element selected from Al, Ga, Sn, Ti.
• the substrate according to the invention is such that the electrical conduction functional layer comprises a layer inserted between the silver-based metal layer and the uniformization layer comprising at least one inorganic chemical compound.
• This insertion layer has the function of forming part of an optical cavity making it possible to make the metal layer based on transparent silver.
• the term inorganic chemical compound comprises at least one dielectric compound and / or at least one electrically conductive compound.
• the dielectric compound comprises at least one compound chosen from oxides, nitrides, carbides, oxynitrides, oxycarbides, carbonitrides, oxycarbonitrides and mixtures of at least two of them.
• the oxides, nitrides, carbides, oxynitrides, oxycarbides, carbonitrides or oxycarbonitrides of the dielectric compound are oxides, nitrides, carbides, oxynitrides, oxycarbides, carbonitrides or oxycarbonitrides of at least one element selected from Ti, Zr, Hf, Ta, Cr, Mo, Zn, Ai, In, Si, Sn, Sb, Bi.
• the dielectric compound preferably comprises a titanium oxide, a zinc oxide, a tin oxide, an aluminum nitride, a silicon nitride and / or a silicon carbide.
• the conductor comprises at least one compound chosen from oxides in stoichiometric oxygen, doped oxides, doped nitrides, doped carbides, doped oxynitrides, doped oxycarbides, doped carbonitrides, doped oxycarbonitrides and than the mixtures of at least two of them.
• the stoichiometric oxides, doped oxides, doped nitrides, doped carbides, doped oxynitrides, doped oxycarbides, doped carbonitrides or doped oxycarbonitrides of the conducting compound are sub stoichiometric oxides, doped oxides, doped nitrides, doped carbides, doped oxynitrides, doped oxycarbides, doped carbonitrides or doped oxycarbonitrides of at least one element selected from Ti, Zr, Ta, Cr, Mo, Zn, Al, In, Si, Sn , the Sb.
• the dopants comprise at least one of the elements chosen from Al, Ga, In, Sn, P, Sb and F. More preferably, the conducting compound comprises at least ⁇ and / or oxide. doped Sn, the dopant being at least one element selected from F and Sb, and / or doped Zn oxide, the dopant being at least one element selected from A 1, Ga, Sn, Ti .
• the inorganic chemical compound comprises at least ZnO x (with x ⁇ 1) and / or Zn x Sn y O z (with x + y> 3 and z ⁇ 6).
• the Zn x Sn y O z comprises at most 95% by weight of zinc, the weight percentage of zinc is expressed relative to the total weight of the metals present in the layer.
• the insertion layer has a geometric thickness of at least 3.0 nm.
• the insertion layer has a geometric thickness of at most 50.0 nm, preferably at most 20.0 nm, more preferably at most 10.0 nm.
• the substrate according to the invention is such that the electrical conduction functional layer comprises at least one optical optimization layer inserted between the silver-based metal layer and the support.
• This optimization layer makes it possible, thanks to its thickness and its chemical nature, to obtain a high light flux.
• It comprises at least one inorganic chemical compound.
• the term inorganic chemical compound comprises at least one dielectric compound and / or at least one electrically conductive compound.
• the dielectric compound comprises at least one compound chosen from oxides, nitrides, carbides, oxynitrides, oxycarbides, carbonitrides, oxycarbonitrides and mixtures of at least two of them.
• the oxides, nitrides, carbides, oxynitrides, oxycarbides, carbonitrides or oxycarbonitrides of the dielectric compound are oxides, nitrides, carbides, oxynitrides, oxycarbides, carbonitrides or oxycarbonitrides of at least one element selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Zn, Ai, In, Si, Sn, Sb, Bi.
• the dielectric compound preferably comprises a titanium oxide, a zirconium oxide, a hafnium oxide, a niobium oxide, a tantalum oxide, a zinc oxide, an aluminum nitride, a silicon nitride and / or silicon carbide.
• the conductor comprises at least one compound chosen from oxides in stoichiometric oxygen, doped oxides, doped nitrides, doped carbides, doped oxynitrides, doped oxycarbides, doped carbonitrides, doped oxycarbonitrides and than the mixtures of at least two of them.
• the stoichiometric oxides, doped oxides, doped nitrides, doped carbides, doped oxynitrides, doped oxycarbides, doped carbonitrides or doped oxycarbonitrides of the conducting compound are sub stoichiometric oxides, doped oxides, doped nitrides, doped carbides, doped oxynitrides, doped oxycarbides, doped carbonitrides or doped oxycarbonitrides of at least one element selected from Ti, Zr, Ta, Cr, Mo, Zn, Al, In, Si, Sn , the P, the Sb.
• the dopants comprise at least one of the elements chosen from Al, Ga, In, Sn, Sb and F. More preferentially, the conducting compound comprises at least TITO and / or doped Sn oxide. , the dopant being at least one element selected from F and Sb, and / or doped Zn oxide, the dopant being at least one element selected from Al, Ga, Sn, Ti.
• the inorganic chemical compound comprises at least ZnO x (with x ⁇ 1) and / or Zn x Sn y O z (with x + y> 3 and z ⁇ 6).
• the Zn x Sn y O z comprises at most 95% by weight of zinc, the weight percentage of zinc is expressed relative to the total weight of the metals present in the layer.
• the optical optimization layer has a geometric thickness of at least 3.0 nm, preferably at least 10.0 nm, more preferably at least 30.0 nm, even more preferably at least 50, 0 nm.
• the optical optimization layer has a thickness of at most 100 nm.
• the substrate according to the invention is such that the electrical conduction functional layer comprises at least one additional crystallization layer inserted between the support and the silver-based metal layer. This layer allows a preferential growth of the silver-based metal layer and thus makes it possible to obtain good electrical and optical properties of said layer.
• the term inorganic chemical compound comprises at least at least ZnO x (with x ⁇ 1) and / or Zn x Sn y O z (with x + y> 3 and z ⁇ 6).
• the Zn x Sn y O z comprises at most 95% by weight of zinc, the weight percentage of zinc is expressed relative to the total weight of the metals present in the layer.
• the crystallization layer has a geometric thickness of at least 3.0 nm.
• the crystallization layer has a thickness of at most 50.0 nm, preferably at most 20.0 nm, more preferably at most 10.0 nm.
• the crystallization layer is merged with the barrier layer and / or the optical optimization layer.
• the sum of the geometric thicknesses of the barrier, optical optimization and crystallization layers is at least 3.0 nm, preferably at least 10.0 nm, more preferably from minus 30.0 nm, still more preferably at least 50.0 nm.
• the sum of the thicknesses of the layers has at most 100 nm.
• barrier and crystallization layers at least one of these two layers is merged with the optical optimization layer.
• the barrier, optimization, crystallization and insertion layers may be of the same chemical nature or of a different chemical nature.
• the terms "different chemical nature” do not exclude the possibility of combinations of type: 3 layers of identical nature and one of a different nature or two layers of identical nature, the two remaining layers being indifferently identical in nature to each other or to different nature.
• the substrate according to the invention is such that it comprises between the support and the uniformization layer, at least one additional stack: silver-based metal layer, insertion layer.
• This stack can be reproduced n times, with n representing an integer greater than or equal to 1.
• the stack constituting the functional electrical conduction layer is preferably a stack comprising from one to three silver-based metal layers, preferably one or two silver-based metal layers.
• the substrate according to the invention essentially has the following structure from the support:
• Barrier layer and optical optimization layer combined: thickness 50-80 nm in Ti0 2 ;
• Crystallization layer thickness 3-20 nm in Zn x Sn y O z as previously defined
• Silver-based metal layer 8-14nm thick in pure Ag
• Insertion layer thickness 3-20nm in Zn x Sn y O z as previously defined
• Standardization layer thickness 0.5-3 nm in X with X: Li, Mg, Cu, Ti, Zr, Hf, V, Nb, Ta, Ni, Pd, Cr, Mo, Al, Zn, Ni-Cr or Zn doped with Al, in nitride of X with X: Ti, Zr, Hf, V, Nb, Ta, Ni, Pd, Cr, Mo, Al, Zn, Ni-Cr, in oxynitride of X with X: Ti , Zr, Cr, Mo, W, Mn, Co, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Si or NiCr, to X oxide with X: Ti, Zr, Hf, V , Nb, Ta, Ni, Pd, Cr, Mo, Al, Zn, Ni-Cr or Zn doped with Al.
• the substrate according to the invention is such that the functional layer is a discontinuous layer in the form of distinct adjacent zones, in particular in the form of parallel strips.
• the substrate according to the invention is such that said discontinuous functional layer exhibits a thickness variation of the zone medium at the zone edges of less than 30%, preferably less than 15%, most preferably less than 5%, most preferably less than 1%.
• the substrate according to the invention is an anode for optoelectronic devices, more preferably for an organic electroluminescent device (OLED).
• OLED organic electroluminescent device
• the invention relates to a method of passivating the surface of a substrate provided with a functional layer such that it comprises the following successive stages:
• Step of depositing the functional layer on at least a part of the support
• a rinsing step with a protic polar solvent, preferably a water-based solvent.
• the deposition step of the functional layer is carried out by cathodic sputtering, possibly assisted by a magnetic field.
• the deposition process is carried out under vacuum.
• under vacuum denote a pressure less than or equal to 1, 2 P a.
• the vacuum process is a magnetic field assisted sputtering technique.
• the passivation solution comprising thiosulfate anions used during the passivation step is preferably a solution based on a protic polar solvent, the preferred solvent being water, more preferably deionized water. Water makes it possible to obtain higher thiosulphate concentrations on the one hand and to avoid carbon contamination of the surface on the other hand.
• the passivation solution is a solution comprising a concentration of thiosulphate anion at least greater than or equal to 0.1 M, preferably at least greater than or equal to 0.5 M, more preferably at least greater than or equal to 0.8 M, most preferably of the order of 1.0 M.
• the passivation solution is based on thiosulfate anions.
• the term "based on” is intended to mean that the thiosulphate anions represent at least 50% of the concentration of the anions present in the passivation solution.
• the thiosulphate salts used for the preparation of the passivation solution are K and / or Na thiosulphates.
• the passivation solution is a solution containing only thiosulphate anions, the other anions likely to be present being only in trace form.
• the passivation solution is a 1.0 M aqueous solution of Na thiosulfate.
• the application of the passivation solution can be carried out by application techniques in roll, spray, curtain or immersion. In the case of an immersion application, it is meant an immersion of the substrate covered with the stack of layers in the passivation solution.
• the passivation solution may be stirred during immersion, the stirring being mechanical or ultrasonic agitation, preferably the stirring is ultrasonic for reasons of uniformization of the solvent flow to the surface of the functional layer to be passivated.
• the solution is not agitated, the absence of agitation allowing better control of the passivation.
• the protic polar solvent used during the optional rinsing step is preferably water, more preferably deionized water, deionized water, it is meant water having a conductivity at most less than or equal to 1 ⁇ 8 / ⁇ . Water makes it possible to obtain higher concentrations of thiosulphate anions and to avoid carbon contamination of the surface.
• the application of the rinsing solution can be carried out by the application techniques in roll, spray, curtain or immersion. In the case of an immersion application, it is intended to immerse the substrate in the rinsing solution.
• the rinsing solution is stirred during the immersion, the stirring being mechanical or ultrasonic agitation.
• the stirring is ultrasonic, the inventors having determined that, surprisingly, the ultrasonic rinsing also contributes to a uniformization of the surface of the functional layer.
• the passivation method of the surface of a substrate provided with a functional layer according to the invention is such that it comprises between the deposition steps of the functional layer and the step passivation, an additional step of etching, said etching being mechanical or laser.
• the etching is a laser engraving.
• the etching step allows obtaining a discontinuous functional layer.
• this step induces the appearance of peaks at the surface of the functional layer, more particularly at the edges of the etching zones, said peaks possibly causing an increase of up to 200% in the initial thickness of the functional layer.
• the inventors have determined that, surprisingly, the step of passivation of the surface by application of a passivation solution comprising thiosulphate anions, advantageously followed by a rinsing step with a protic polar solvent, leads to a reduction or even a disappearance of said peaks.
• a third subject of the invention relates to an optoelectronic device comprising a substrate according to the invention.
• Figure 1 shows a morphological observation of a laser engraving line by 3D microscopy
• FIG. 2 illustrates the effect of morphology resulting from laser etching on a low ignition voltage OLED device by the presence of shiny edges (A) and presents a simplified diagram of the device studied (B),
• FIG. 3 shows the effect of passivation on the morphology of the etched layer, before (3A, 3B) and after passivation (3C, 3D)
• FIG. 4 is a C-AFM measurement illustrating the effect of the passivation on the conductivity of the etching edges
• FIG. 5 is a topographic observation by 3D microscopy of a laser etching line before passivation, after 5 minutes of immersion in the passivation solution and after 15 minutes of passivation,
• Figure 6 is a topographic observation by 3D microscopy after passivation of 5 min, with (B) / without use (A) of ultrasound during rinsing
• FIG. 7 schematically represents an example of a substrate according to the invention
• a functional electrical conduction layer having as structure from the support:
• Ti0 2 (65.0 nm) / Zn x Sn y O z (5.0 nm) / Ag (12.5 nm) / Ti (2.5 nm) / Zn x Sn y O z (7.0 nm)
• Ti / Nitride (1.5 nm) was sputtered onto a clear glass support having a thickness of 1.60 mm.
• the deposit conditions for each of the layers are as follows:
• TiO 2 -based layers are deposited using a titanium target at a pressure of 0.5 Pa in an Ar / O 2 atmosphere.
• the layers based on Zn x Sn y O z are deposited using a ZnSn alloy target, at a pressure of 0.5 Pa in an Ar / O 2 atmosphere, the Ag layers are deposited using an Ag target, at a pressure of 0.5 Pa in an Ar atmosphere, the Ti-based layers are deposited using a Ti target, under a pressure of 0.5 Pa in an Ar atmosphere and can be partially oxidized by the following Ar / O 2 plasma, The uniformity layer of Ti nitride-based electrical surface properties is deposited using a Ti target at a pressure of 0.5 Pa in an Ar / N 2 80/20 atmosphere.
• Said layer then underwent laser engraving using a laser of the Edgewave brand.
• the characteristics of the laser used for etching are shown in Table I.
• Figure 1 shows the effect of the laser beam on the functional layer.
• the functional layer undergoes characteristic topographic damage resulting in particular by the formation of morphological peaks corresponding to an increase up to 200% of the initial thickness of the layer.
• the leakage currents correspond to currents flowing in the opposite direction of the current enabling operation of the OLED device. They are calculated on the basis of current densities (mA / cm 2 ) measured at -5V.
• the substrate obtained is then immersed in a 1M aqueous solution of Na thiosulphate in the absence of stirring for 10 minutes at room temperature.
• the topographic repair and electrical passivation effects obtained are as shown in FIGS. 3 and 4.
• a clear reduction or even the complete disappearance of the morphological peaks formed under the action of the laser beam (FIG. 3) is associated with the electrical isolation of the laser etching edges observed in c-AFM (Fig. 4).
• C-AFM Conductive Atomic Force Microscopy
• the microscope is used in confocal mode, that is, the 3D representation of the observed sample is reconstructed from a set of images made at different depths in the sample. These sections are obtained by positioning the focal plane of the lens at these different depths.
• C-AFM measurements were performed on a Veeco branded device.
• Conductive AFM makes it possible to simultaneously capture the topographic image and the electrical image (conductivity measurement) of the observed sample.
• the characteristics of the apparatus used are shown in Table II.
• the chemical composition of the passivation solution, its concentration of thiosulfate and its temperature are adjusted so as to remove only the pile of surface materials present at the laser etching edges, without affecting the active surface of the functional layer of electrical conduction.
• Figure 5 illustrates the topographic observation of a laser engraving line by 3D microscopy before immersion in the passivation solution after 5 minutes and after 15 minutes of immersion. The appearance of secondary peaks after 15 minutes of immersion is noted.
• Table IV briefly shows the effect of the concentration of the passivation solution as a function of the treatment time, said treatment being carried out at room temperature ( ⁇ 25 ° C.):
• FIG. 6 represents an example of a substrate (1), said substrate comprising a support 10 and a functional layer (1 1), said functional layer comprising successively from the support (10):
• substrates comprising a glass support and a low emissivity type functional layer that can be subjected to said passivation treatment are shown in Table IV.
• Table IV Examples of substrates that can be passivated, said substrate consisting of an extra-clear glass support covered by one of the following functional layers: TABLE IV
• ZS05 zinc tin mixed oxide obtained by cathodic sputtering in an oxidizing atmosphere from a metal target of a ZnSn alloy at 52% Zn and 48% Sn
• ZS09 zinc tin mixed oxide obtained by sputtering in an oxidizing atmosphere from a metal target of a ZnSn alloy at 90% Zn and 10% Sn
• TZO mixed titanium zirconium oxide obtained by cathodic sputtering in an oxidizing atmosphere from a metal target of a TiZr alloy at 50% Ti and 50% Zr

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