EP2745401A1 - Traitement d'impulsions - Google Patents
Traitement d'impulsionsInfo
- Publication number
- EP2745401A1 EP2745401A1 EP12761774.4A EP12761774A EP2745401A1 EP 2745401 A1 EP2745401 A1 EP 2745401A1 EP 12761774 A EP12761774 A EP 12761774A EP 2745401 A1 EP2745401 A1 EP 2745401A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- pulse
- photo
- electrical pulse
- detector
- input electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000012545 processing Methods 0.000 title description 6
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/17—Circuit arrangements not adapted to a particular type of detector
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/04—Shaping pulses by increasing duration; by decreasing duration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
- H03K5/1536—Zero-crossing detectors
Definitions
- the present invention relates to the processing of electrical pulses.
- the present invention is particularly suitable for, but is not limited to, processing pulses of very narrow width, for example pulses of pulse width/decay time less than 10 nanoseconds.
- BACKGROUND Relatively narrow pulses, for example pulses of pulse width/decay time less than 10 nanoseconds, and even more so pulses of pulse width/decay time less than 5 nanoseconds, are difficult to process, for example detect or measure, at least with conventional routine electronic components.
- Such pulses that it is desired to process may be produced in various applications, for example when attempting to detect radiation, for example high energy neutrons.
- FIG. 1 is a schematic illustration in simplified form of a pulse with such an overshoot characteristic.
- the pulse to be processed 2 is a negative pulse of amplitude -180mv and has a decay time/pulse width of 2 nanoseconds, but immediately thereafter has a positive overshoot 4.
- Various types of conventional pulse stretchers are known.
- One example is passive diode pulse stretchers based on a diode and capacitor arrangement. Disadvantages of this type are that the diode characteristics are non-linear and a voltage drop across the diode junction leads to a lack of response at low signal levels. Another disadvantage is that the charging time of the capacitor means the pulse amplitude is not retained.
- Another example is active diode pulse stretchers in which an operational amplifier is used to improve the performance of the above described passive diode pulse stretcher type. The diode is incorporated in a feedback loop of the operational amplifier, thereby reducing the effect of the voltage drop.
- the output remains nonlinear due to the characteristics of the diode, and the operational amplifier is required to be wideband with a high slew rate. Also, electromagnetic interference tends to be generated due to the fast switching of the operational amplifier. It is noted that all these conventional types of pulse stretcher are provided entirely by electronic components.
- the present inventors have invented apparatus and methods for stretching very narrow width electronic pulses, which apparatus and methods are surprisingly based on opto-electronic components.
- the newly invented opto-electronic based apparatus and methods are particularly useful when applied to pulses of pulse width less than or equal to 10 nanoseconds, and even more so when applied to pulses of pulse width less than or equal to 5 nanoseconds.
- the present invention provides an apparatus for stretching a narrow pulse width electrical pulse; the apparatus comprising: a photo-emitter; and a photo-detector; the photo-emitter arranged for being driven by an input electrical pulse to emit an electromagnetic radiation pulse; the photo-detector optically coupled to the photo-emitter for receiving the electromagnetic radiation pulse and to produce a corresponding output electrical pulse.
- the apparatus may stretch the input electrical pulse by virtue of the output response time of the photo-detector being greater than the pulse width of the input electrical pulse such that the output electrical pulse is correspondingly of greater pulse width than the input electrical pulse.
- the apparatus may further comprise a charge sensitive amplifier arranged to receive the output electrical pulse in the form of a current pulse, and the apparatus may stretch, or further stretch, the input electrical pulse by virtue of the charge sensitive amplifier stretching the input current pulse, the apparatus thereby providing an output electrical pulse of greater pulse width than the input electrical pulse.
- the input electrical pulse may be of pulse width less than or equal to 10 nanoseconds.
- the input electrical pulse may be of pulse width less than or equal to 5 nanoseconds.
- the apparatus may be arranged to receive the input electrical pulse form a radiation detector.
- the photo-emitter may be biased to be at its point of photo-emission.
- the photo-detector may be biased to be at its point of photo-response.
- the photo-emitter may be a light emitting diode.
- the photo-detector may be a photodiode.
- the present invention provides a method of stretching a narrow pulse width electrical pulse; the method comprising: driving a photo- emitter with an input electrical pulse; the photo-emitter emitting an electromagnetic radiation pulse; and an optically coupled photo-detector receiving the electromagnetic radiation pulse and providing a corresponding output electrical pulse.
- the method may be applied to an input electrical pulse that has an overshoot, the method thereby removing the overshoot.
- the method may be applied such as to preserve the amplitude of the pulse.
- the input electrical pulse may be of pulse width less than or equal to 10 nanoseconds.
- the input electrical pulse may be of pulse width less than or equal to 5 nanoseconds.
- Figure 1 is a schematic illustration in simplified form of a pulse with an overshoot characteristic
- Figure 2 is a circuit diagram of a first embodiment of a pulse stretcher
- Figure 3 is a circuit diagram showing further details of a charge sensitive amplifier of the circuit of Figure 2;
- Figure 4 is a circuit diagram of a further embodiment of a pulse stretcher;
- Figure 5 is a circuit diagram of a further embodiment of a pulse stretcher.
- FIG. 2 is a circuit diagram of a first embodiment of a pulse stretcher 6.
- the pulse stretcher 6 is a negative pulse stretcher, i.e. it is suitable for stretching a negative pulse such as the pulse 2 shown by way of example in Figure 1 .
- the pulse stretcher 6 comprises an optoelectronic module 8.
- the optoelectronic module 8 comprises a light emitting diode (LED) D1 that is optically coupled to a photodiode D2, and a housing in which the LED D1 and the photodiode D2 are housed.
- the housing comprises a case that protects the LED D1 and the photodiode D2 from external radiation over an appropriate wavelength range compared to the wavelength range of operation of the LED D1 and the photodiode D2.
- the casing provides protection across the wavelength range of 10 nm to 10 ⁇ .
- ground screening is provided to the LED D1 , however this is optional, and in other embodiments, for example, ground screening can be applied to the entire opto-electronic module 8.
- the LED D1 and the photodiode D2 are selected such that the spectral output of the LED D1 is matched to the spectral response of the photodiode D2.
- the pulse stretcher 6 further comprises connection points for application of a first bias voltage Vbiasl and a second bias voltage Vbias2.
- the first bias voltage Vbiasl is applied to the LED D1 to bias the LED D1 to the point of photo-emission in the absence of any input pulse voltage.
- the first bias voltage Vbiasl is approximately +1 .5 V.
- the second bias voltage Vbias2 is applied to the photodiode D2 to set the photodiode D2 up in reverse bias mode. This provides firstly that the photodiode is not conducting unless incident radiation from the photodiode D1 is falling on the photodiode, and, secondly, that when incident radiation from the photodiode D1 does fall on the photodiode, the output current from the photodiode D2 is substantially or approximately directly proportional to the incident radiation from the photodiode D1 falling on the photodiode. In this embodiment the second bias voltage Vbias2 is approximately +10 V.
- the pulse stretcher 6 further comprises decoupling capacitors in relation to the provision of the bias voltages, namely capacitors C1 and C2 in relation to the first bias voltage Vbiasl , and capacitors C3 and C4 in relation to the second bias voltage Vbias2.
- the pulse stretcher 6 further comprises an input connection point for input of the electronic pulse to be stretched. This is in the form of an input voltage Vin.
- the pulse stretcher 6 further comprises a resistor R1 connected between Vin and the LED D1 .
- the resistor R1 provides impedance matching between the LED D1 and whatever is providing the incoming pulse.
- the pulse source is a 50 ohms source, and hence the resistance value of the resistor R1 is 50 ohms. In other embodiments other impedance matching arrangements may be provided.
- any errors from lack of impedance matching may be acceptable, and/or depending on the nature of the pulse source, there may be no need for or benefit from an impedance matching arrangement, and accordingly the resistor R1 or other impedance matching arrangement may be omitted.
- the pulse stretcher 6 further comprises a charge sensitive amplifier (CSA) 10, which is connected to the output of the photodiode D2.
- CSA charge sensitive amplifier
- Figure 3 is a circuit diagram showing further details of the CSA 10.
- the CSA 10 comprises an operational amplifier U1 , which in this embodiment is arranged with DC supply voltages of ⁇ 12V.
- the output of the photodiode D2 is connected to the inverting input of the operational amplifier U1 .
- the CSA 10 further comprises a resistor-capacitor arrangement connected between ground and the non-inverting input of the operational amplifier U1 .
- this resistor-capacitor arrangement comprises a resistor R2 (of resistance value 10 mega ohms) in parallel with a capacitor C5 (of capacitance value 10 nF).
- the CSA 10 further comprises a further resistor-capacitor arrangement connected between the inverting input of the operational amplifier U1 and the output of the operational amplifier U1 , thereby providing a feedback loop.
- this resistor-capacitor arrangement comprises a resistor R3 (of resistance value 10 mega ohms) in parallel with a capacitor C6 (of capacitance value 2.2 pF).
- the CSA 10 further comprises a resistor R4 (of resistance value 20 ohms) connected between the output of the operational amplifier U1 and an output Vout of the CSA 10.
- a pulse such as the pulse 2
- the pulse 2 drives the LED D1 , and the LED D1 emits a corresponding pulse of emitted electromagnetic radiation. This falls on the photodiode D2, and the photodiode D2 accordingly outputs a resulting current pulse (i.e. charge pulse).
- the output current pulse is stretched, i.e. has an extended decay time/wider pulse width than the original input pulse, by virtue of the physical nature of the photodiode D2.
- the rise time of the photodiode D2 is very fast to approximately match the input pulse, whereas the fall time of the photodiode D2 is relatively slow compared to that of the input pulse, thus stretching the pulse.
- the LED D1 is a gallium arsenide LED with a sub nanosecond, e.g. 100 picoseconds, rate of rise time (another possibility, for example, is a gallium phosphide LED).
- the photodiode D2 is a silicon carbide photodiode with an approximate fall time of 20 nanoseconds.
- the amplitude is approximately retained since, firstly, the LED D1 is biased (in this embodiment) to the point of photo-emission, and secondly, there are only relatively small or negligible energy losses between the LED D1 and the photodiode D2. (In other embodiments, the LED D1 is only partially or not at all biased to the point of photo-emission, which will tend to lose the amplitude retention, but which embodiments will nevertheless still tend to detect the presence of the pulse (or aid detection of the pulse), for example, which will be sufficient in certain applications.)
- any overshoot (for example the overshoot 4 shown in Figure 1 ) present in the original signal will tend to be removed by the LED D1 .
- the pulse is further stretched, as follows. If a negative voltage is applied to the CSA 10 (i.e. to the inverting input of the operational amplifier U1 ), the operational amplifier U1 produces a positive output in an attempt to produce the changing voltage across the capacitor C6 that is necessary to maintain the current established by the voltage difference across the resistor R3. The capacitor C6 then discharges over time to further stretch the pulse.
- the output of the operational amplifier is provided as an output of the CSA 10 (and hence of the pulse stretcher 6) via impedance matching resistor R4 that is between the output of the operational amplifier U1 and the Vout output i.e. the resistor R4 provides impedance matching between the output of the operational amplifier U1 and whatever the output is being input to.
- the resistance value of the resistor R4 is 20 ohms.
- other impedance matching arrangements may be provided.
- any errors from lack of impedance matching may be acceptable, and/or depending on the nature of the output destination, there may be no need for or benefit from an impedance matching arrangement, and accordingly the resistor R4 or other impedance matching arrangement may be omitted.
- any overshoot (for example the overshoot 4 shown in Figure 1 ) present in the original signal tends to be removed by the LED D1 . Therefore the integrator arrangement of the CSA 10 will tend not to fall down due to overshoot/ringing.
- a CSA 10 is known in the art as such, conventionally it is not considered usable with pulses with overshoot, since conventionally the overshoot of the incoming pulse will cancel out the effect of the negative signal, thereby severely limiting the response.
- one advantage of the pulse stretcher 6 is that it allows a conventional CSA to be used for further stretching the pulse, by virtue of the operation of the pulse stretcher 6 removing entirely, or at least substantially, e.g. the majority of, the overshoot.
- embodiments of the overall pulse stretcher 6 using a photodiode D2 with a relatively fast fall time may be provided primarily for the purpose of allowing the output of the photodiode D2 to be in a form able to be processed by the CSA part of the pulse stretcher 6, even when or if the fall time of the photodiode D2 is so fast that at the output of the photodiode the pulse has not yet been stretched as such (i.e. all the stretching will then take place in the CSA 10).
- the pulse processing apparatus provided by the components of the pulse stretcher 6 but excluding the CSA 10 represents in itself an advantageous embodiment of a pulse processor/pulse processing apparatus.
- FIG 4 is a circuit diagram of a further embodiment of a pulse stretcher 6.
- the pulse stretcher 6 is a positive pulse stretcher, i.e. it is suitable for stretching a positive pulse, i.e. a pulse that has positive voltage value, and for which any overshoot would have negative voltage value.
- the negative pulse stretcher 6 of this embodiment has the same components arranged in the same way, and operates the same, as the positive pulse stretcher 6 of the above described embodiments as described with reference to Figures 2 and 3. Also, the same reference numerals are used for the same items.
- the difference is that the LED D1 is reversed and the Vbiasl polarity is changed.
- the above embodiments include the charge sensitive amplifier.
- the CSA 10 may be omitted and instead the remainder of the circuit arrangement of Figure 2 (and equally of Figure 4) may be modified so as to provide a voltage output rather than a current/charge output.
- One such embodiment relating to the circuit arrangement of Figure 2 i.e. the negative pulse version
- Figure 5 it is to be appreciated that the same modification can be made to the circuit arrangement of Figure 4 to provide a corresponding positive pulse version.
- Figure 5 is a circuit diagram of a further embodiment of a pulse stretcher 6 and, except where stated otherwise below, the pulse stretcher 6 of this embodiment has the same components arranged in the same way, and operates the same, as the pulse stretchers 6 of the above described embodiments as described with reference to Figures 2, and 4. Also, the same reference numerals are used for the same items.
- the CSA 10 is omitted, and the photodiode D2 is operated in photovoltaic mode, i.e. in an unbiased mode. Accordingly, the second bias voltage Vbias2 is also omitted in this embodiment, and therefore also the decoupling capacitors D3 and C4 are omitted.
- the anode side of the photodiode D2 is grounded, and the cathode side provides the output Vout of the pulse stretcher 6.
- the photo-emitter is an LED
- the photo-detector is a photodiode.
- either or both the photo-emitter and the photo-detector may be implemented by items other than an LED and a photodiode respectively.
- the photo-emitter may be a semiconductor laser diode instead of an LED. Because a semiconductor laser diode tends not to be as linear as an LED, measurement or replication of the amplitude of the pulse may not be so accurate, however the stretched pulse will still be detected.
- the photo-detector may be a phototransistor or a photomultiplier tube, instead of a photodiode.
- the specific circuit components are essential, and in other embodiments one or more may be omitted, with their functionality thereby omitted, or replaced by other components performing the same or similar or alternative functionality.
- different or additional circuit components and arrangements may be used in addition to or instead of the components used in the above described embodiments. For example, different biasing arrangements may be implemented. Another example is that components for temperature compensation, e.g. temperature compensation of the bias levels, may be included.
- the above embodiments may be used for the purpose of increasing the time available to detect the presence of a pulse, even when the embodiments are such that measurement of the amplitude is rendered less accurate or even unavailable.
- the above described embodiments of pulse stretchers may be used in many applications.
- One possibility is as an interface between a detector and monitoring equipment.
- the detector may, for example, be a radiation detector, for example a neutron detector or a proton detector.
- Another possibility is for the pulse stretcher to be used as a sample and hold device for analogue to digital conversion.
- the embodiments tend to allow relatively fast, narrow pulses to be stretched.
- the embodiments tend to be able to stretch pulses of relatively low amplitude.
- the stretching of the pulse tends to allow the pulse stretcher to be used as a form of peak detector.
- the embodiments tend to provide reduced electromagnetic interference compared to conventional electronic pulse stretchers, due to the optical isolation introduced by the photo-emitter/photo-detector arrangement.
- Different embodiments may be provided, e.g. with different choices of photo-emitter/photo-detector pairs, so as to give potential operation over a very wide wavelength, for example at wavelengths ranging from 100 nm to 10 ⁇ , and most readily from 200 nm to 800 nm.
- the embodiments tend to allow overshoot to be accommodated, allowing stretching even when opposing pulses are present e.g. in ringing or transient oscillations.
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Amplifiers (AREA)
- Light Receiving Elements (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1114148.8A GB2493742A (en) | 2011-08-17 | 2011-08-17 | A pulse stretcher for nuclear pulse measurements, using photo-coupler response time |
PCT/GB2012/051985 WO2013024285A1 (fr) | 2011-08-17 | 2012-08-15 | Traitement d'impulsions |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2745401A1 true EP2745401A1 (fr) | 2014-06-25 |
Family
ID=44800438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12761774.4A Withdrawn EP2745401A1 (fr) | 2011-08-17 | 2012-08-15 | Traitement d'impulsions |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2745401A1 (fr) |
GB (1) | GB2493742A (fr) |
WO (1) | WO2013024285A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020141291A1 (fr) * | 2019-01-04 | 2020-07-09 | The Secretary Of State For Defence | Détecteur d'impulsions électromagnétiques et procédé d'utilisation |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1240294B (de) * | 1961-11-14 | 1967-05-11 | Licentia Gmbh | Schaltungsanordnung zur Umformung kurzzeitiger Lichtimpulse in elektrische Signale |
US3902060A (en) * | 1972-04-04 | 1975-08-26 | Westinghouse Electric Corp | Self-optimizing biasing feedback for photo-electric transmission systems |
JPS56123125A (en) * | 1980-03-04 | 1981-09-28 | Toshiba Corp | Photoelectric detector |
JPS62110315A (ja) * | 1985-11-08 | 1987-05-21 | Koito Ind Co Ltd | パルス発生回路 |
US5225884A (en) * | 1991-06-05 | 1993-07-06 | Optical Associates, Inc. | Excimer laser pulse analyzer and method |
JP3257479B2 (ja) * | 1997-10-24 | 2002-02-18 | 村田機械株式会社 | ダイヤルイン端末装置 |
FR2890750B1 (fr) * | 2005-09-09 | 2007-11-02 | Commissariat Energie Atomique | Dispositif de mesure d'impulsions de courant tres breves |
GB0916762D0 (en) * | 2009-09-24 | 2009-11-04 | Gigle Semiconductor Ltd | Electrical isolators |
-
2011
- 2011-08-17 GB GB1114148.8A patent/GB2493742A/en not_active Withdrawn
-
2012
- 2012-08-15 EP EP12761774.4A patent/EP2745401A1/fr not_active Withdrawn
- 2012-08-15 WO PCT/GB2012/051985 patent/WO2013024285A1/fr active Application Filing
Non-Patent Citations (2)
Title |
---|
None * |
See also references of WO2013024285A1 * |
Also Published As
Publication number | Publication date |
---|---|
GB2493742A (en) | 2013-02-20 |
WO2013024285A1 (fr) | 2013-02-21 |
GB201114148D0 (en) | 2011-10-05 |
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