EP2700614A3 - Procédés de fabrication de structures mems par gravure de structures sacrificielles intégrées dans du verre - Google Patents

Procédés de fabrication de structures mems par gravure de structures sacrificielles intégrées dans du verre Download PDF

Info

Publication number
EP2700614A3
EP2700614A3 EP20130168373 EP13168373A EP2700614A3 EP 2700614 A3 EP2700614 A3 EP 2700614A3 EP 20130168373 EP20130168373 EP 20130168373 EP 13168373 A EP13168373 A EP 13168373A EP 2700614 A3 EP2700614 A3 EP 2700614A3
Authority
EP
European Patent Office
Prior art keywords
glass
methods
sacrificial features
mems structures
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP20130168373
Other languages
German (de)
English (en)
Other versions
EP2700614B1 (fr
EP2700614A2 (fr
Inventor
Ryan Supino
Grant H. Lodden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of EP2700614A2 publication Critical patent/EP2700614A2/fr
Publication of EP2700614A3 publication Critical patent/EP2700614A3/fr
Application granted granted Critical
Publication of EP2700614B1 publication Critical patent/EP2700614B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00619—Forming high aspect ratio structures having deep steep walls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • B81C2201/0194—Transfer of a layer from a carrier wafer to a device wafer the layer being structured

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
EP13168373.2A 2012-08-22 2013-05-17 Procédés de fabrication de structures MEMS par gravure de structures sacrificielles intégrées dans du verre Active EP2700614B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261691984P 2012-08-22 2012-08-22
US13/749,008 US8735199B2 (en) 2012-08-22 2013-01-24 Methods for fabricating MEMS structures by etching sacrificial features embedded in glass

Publications (3)

Publication Number Publication Date
EP2700614A2 EP2700614A2 (fr) 2014-02-26
EP2700614A3 true EP2700614A3 (fr) 2014-09-24
EP2700614B1 EP2700614B1 (fr) 2015-09-16

Family

ID=48430598

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13168373.2A Active EP2700614B1 (fr) 2012-08-22 2013-05-17 Procédés de fabrication de structures MEMS par gravure de structures sacrificielles intégrées dans du verre

Country Status (4)

Country Link
US (1) US8735199B2 (fr)
EP (1) EP2700614B1 (fr)
JP (1) JP2014039995A (fr)
CN (1) CN103626116A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9499392B2 (en) * 2013-02-05 2016-11-22 Butterfly Network, Inc. CMOS ultrasonic transducers and related apparatus and methods
CA2905040C (fr) 2013-03-15 2021-10-19 Butterfly Network, Inc. Transducteurs ultrasonores a semi-conducteur complementaire a l'oxyde de metal (cmos) et leurs procedes de formation
TWI708368B (zh) 2014-04-18 2020-10-21 美商蝴蝶網路公司 在互補式金屬氧化物半導體晶圓中的超音波轉換器及相關設備和方法
CN105174203B (zh) * 2014-05-28 2016-09-28 无锡华润上华半导体有限公司 基于mems的传感器的制作方法
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
US20160039664A1 (en) * 2014-08-06 2016-02-11 Honeywell International Inc. Monolithic integration of stress isolation feautures in a microelectromechanical system (mems) structure
US10131535B2 (en) 2015-05-22 2018-11-20 Honeywell International Inc. Monolithic fabrication of thermally isolated microelectromechanical system (MEMS) devices
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3642611B1 (fr) 2017-06-21 2024-02-14 Butterfly Network, Inc. Transducteur à ultrasons microfabriqué ayant des cellules individuelles comportant des sections d'électrode électriquement isolées
FR3076292B1 (fr) * 2017-12-28 2020-01-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de transfert d'une couche utile sur un substrat support
CN112938894B (zh) * 2021-03-11 2024-06-28 中北大学 一种多层次立体化的mems器件抗冲击防护结构的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004017371A2 (fr) * 2002-08-15 2004-02-26 The Charles Stark Draper Laboratory, Inc. Procede de microusinage de structures utilisant un materiau de silicium sur isolant
DE102007060931A1 (de) * 2006-12-21 2008-08-28 Continental Teves Ag & Co. Ohg Verkapselungsmodul, Verfahren zu dessen Herstellung und Verwendung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2368449A1 (fr) * 1999-03-25 2000-10-05 Nippon Sheet Glass Co., Ltd. Panneau de verre et son procede de production
US7381630B2 (en) * 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
FR2880128B1 (fr) * 2004-12-29 2007-02-02 Commissariat Energie Atomique Accelerometre micro-usine a peignes capacitifs
JP2012156403A (ja) * 2011-01-27 2012-08-16 Panasonic Corp ガラス埋込シリコン基板およびその製造方法
US8847143B2 (en) 2011-04-27 2014-09-30 Honeywell International Inc. Systems and methods for an encoder and control scheme
CN102992261B (zh) * 2012-12-31 2015-08-19 东南大学 玻璃微结构加氢正压热成型方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004017371A2 (fr) * 2002-08-15 2004-02-26 The Charles Stark Draper Laboratory, Inc. Procede de microusinage de structures utilisant un materiau de silicium sur isolant
DE102007060931A1 (de) * 2006-12-21 2008-08-28 Continental Teves Ag & Co. Ohg Verkapselungsmodul, Verfahren zu dessen Herstellung und Verwendung

Also Published As

Publication number Publication date
EP2700614B1 (fr) 2015-09-16
JP2014039995A (ja) 2014-03-06
CN103626116A (zh) 2014-03-12
US8735199B2 (en) 2014-05-27
EP2700614A2 (fr) 2014-02-26
US20140057382A1 (en) 2014-02-27

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