EP2691986A1 - Fabrication d'un composant semi-conducteur par liaison soutenue par un laser - Google Patents

Fabrication d'un composant semi-conducteur par liaison soutenue par un laser

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Publication number
EP2691986A1
EP2691986A1 EP12712068.1A EP12712068A EP2691986A1 EP 2691986 A1 EP2691986 A1 EP 2691986A1 EP 12712068 A EP12712068 A EP 12712068A EP 2691986 A1 EP2691986 A1 EP 2691986A1
Authority
EP
European Patent Office
Prior art keywords
layer
semiconductor film
substrate
semiconductor
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12712068.1A
Other languages
German (de)
English (en)
Inventor
Richard Auer
Vladimir Gazuz
Thomas Kunz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayerisches Zentrum fuer Angewandte Energieforschung eV
Original Assignee
Bayerisches Zentrum fuer Angewandte Energieforschung eV
ZAE Bayern Bayerisches Zentrum fuer Angewandte Energieforschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayerisches Zentrum fuer Angewandte Energieforschung eV, ZAE Bayern Bayerisches Zentrum fuer Angewandte Energieforschung eV filed Critical Bayerisches Zentrum fuer Angewandte Energieforschung eV
Publication of EP2691986A1 publication Critical patent/EP2691986A1/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the invention relates to a method for producing a semiconductor device, in particular a diode or a solar cell, for. B. based on Si, wherein a semiconductor film forms at least one eutectic compound with a bonding layer on a substrate. Furthermore, the invention relates to a semiconductor device, in particular a diode or a solar cell, which is produced by the said method.
  • the cost of photovoltaic modules, z. B. with Si solar cells can be reduced by the solar cells are made with the thinnest possible layers of silicon (Si). These can be z. B.
  • the method described has a number of disadvantages.
  • the substrate is strongly heated so that it may undesirably change its shape.
  • the thermal expansion coefficient of the substrate is often significantly greater than the thermal expansion coefficient of the silicon.
  • surface heating can thus create strong tension.
  • substrates of glasses with high temperature stability and low thermal expansion would have to be used.
  • such glasses are relatively expensive.
  • full surface heating of the substrate is possible.
  • no localized contacts can be made, as required for solar cells with very high efficiencies.
  • a module interconnection is complicated.
  • Methods for metallizing a solar cell are known from the prior art, wherein metallic material is introduced into a surface of the solar cell under the action of laser radiation.
  • metallic material that has been deposited in advance on a surface of the solar cell is inserted into the semiconductor material of the solar cell by the laser radiation.
  • DE 10 2009 053 776 A1 published after the priority date of the present invention
  • DE 10 2006 044 936 B4 to transfer metal from a separate carrier film to the surface of the solar cell.
  • the support film is placed in contact with the surface or at a distance therefrom and according to the desired pattern of metallization, e.g. B. linear, irradiated.
  • the metal is separated from the carrier film and deposited on the solar cell. After the transfer of the metal, the carrier film is removed.
  • the object of the invention is to provide an improved method for producing a semiconductor device, in particular a diode or a solar cell, with which
  • the method should in particular make it possible to process thin semiconductor films with layer thicknesses in the sub-mm range in a simplified manner to form semiconductor components.
  • the object of the invention is furthermore to provide an improved semiconductor component, in particular a diode or a solar cell, with which disadvantages of conventional semiconductor components can be overcome.
  • the semiconductor component is to be characterized in particular by a reproducible and precise shape and / or a high degree of flexibility with regard to the provision of contacts and / or dopings.
  • a method for producing a semiconductor component in particular a diode or a solar cell, in which a semiconductor film is connected to a substrate by means of laser radiation via a bonding layer (intermediate layer).
  • the semiconductor film is applied to the joining layer containing a metal.
  • the semiconductor film and the bonding layer are heated by the laser radiation to a temperature above the eutectic temperature of a composition of the metal contained in the bonding layer and the semiconductor material, so that the semiconductor film and the bonding layer merge.
  • the laser radiation is directed in particular to the bonding layer, from which metal, possibly via further intermediate layers, can migrate into the semiconductor film.
  • a eutectic connection of the semiconductor foil with the bonding layer is formed by the laser radiation.
  • the eutectic compound which may extend over optionally provided further intermediate layers, simultaneously forms a mechanical connection and an electrical contact and / or a doping region in the semiconductor film.
  • the electrical contact is a contact for connection to a p-type doping region (p-type contact) or a contact for connection to an n-type doped region (n-type contact), depending on the conductivity type of the semiconductor material and the metal.
  • the method thus generally comprises a laser-assisted combined bonding, in particular aluminum bonding, and diffusion for producing the semiconductor component, in particular a Si solar cell or Si diode.
  • the laser radiation causes locally limited heating in a predetermined region (eutectic region) delimited by the extent of the radiation field of the laser radiation.
  • the laser radiation is locally limited, i. h in an area smaller than the area of the semiconductor film.
  • the eutectic temperature is exceeded in the eutectic region, so that the eutectic compound is formed locally.
  • the extent of the eutectic region (diameter preferably less than 1 mm, in particular less than 0.1 mm) is substantially smaller than the substrate sizes of practical interest, the local heating does not change the substrate or the semiconductor foil. Undesirable deformations of the substrate and stresses due to different coefficients of expansion are avoided.
  • the inventive method simplifies the production of solar cells with an efficiency above 20%.
  • the laser radiation melts the bonding layer and the eutectic bond of the semiconductor film with the bonding layer is achieved without the metal of the bonding layer being separated from the substrate.
  • the inventors have found that the adhesion of the bonding layer to the substrate is surprisingly not impaired and therefore the permanent mechanical bond between the semiconductor film and the substrate can be achieved.
  • z. B. produced by vapor deposition in a high vacuum Fünelln, z. As aluminum, have sufficient adhesion to the To obtain connection between the semiconductor film and the substrate.
  • a semiconductor device in particular a diode or a solar cell, comprising a substrate, a bonding layer containing a metal and formed on the substrate surface, and at least one semiconductor foil made of a semiconductor material over at least a eutectic compound is bonded to the bonding layer and via the bonding layer to the substrate.
  • the at least one eutectic connection is generated by means of local laser irradiation.
  • the semiconductor material is doped at the at least one eutectic connection with the metal such that a charge carrier concentration above 10 18 cm -3 is formed in the semiconductor material. The contacting of the semiconductor component takes place via the bonding layer or its sections (bonding layer sections), which are connected to doping regions in the semiconductor material.
  • semiconductor film refers to any layered semiconductor material which is preferably provided as a cantilevered sheet (sheet, plate) and z. B. comprises a wafer.
  • the layered, preferably self-supporting semiconductor material may be prepared by methods known per se, such as. By sawing, introducing a porous sacrificial layer (see R. Brendel et al., Phys. Stat., Solidi (a), Vol. 197, 2003, p.
  • the semiconductor material can be doped or undoped.
  • the semiconductor film may carry further layers which in the finished semiconductor component intermediate or outer layers, for. B. for isolation doping or passivation purposes.
  • On a substrate a plurality of semiconductor films may be arranged side by side.
  • the semiconductor foil is made of silicon.
  • another semiconductor material may be provided, such. Ge or GaAs.
  • the semiconductor film has a thickness less than 200 pm, in particular less than 100 ⁇ .
  • substrate denotes any solid having a surface which is suitable as a carrier of the semiconductor material in the semiconductor component.
  • the substrate comprises glass or a glass-ceramic, i. H. the substrate is made entirely of glass or glass ceramic, such as. Example, borosilicate glass, soda-lime glass, glass-ceramic, in particular with main components lithium oxide, aluminum oxide and silicon dioxide, or of another material, in particular ceramic, z.
  • EVA ethylene vinyl acetate
  • a plastic substrate is provided on the surface of which a glass or glass-ceramic layer is formed.
  • a provided on the substrate glass or glass ceramic layer preferably has a thickness of more than 0.5 ⁇ , in particular more than 5 ⁇ .
  • bonding layer denotes a metal layer or metal-containing layer which is firmly connected to the surface of the substrate and which can enter into the eutectic connection with the semiconductor.
  • the bonding layer has a thickness less than 30 ⁇ , in particular less than 10 ⁇ ⁇ on, and greater than 0.1 ⁇ , in particular greater than 0.5 ⁇ im on.
  • the joining layer consists of aluminum (AI).
  • a metal-containing layer comprises, for. B. a pure metal layer or alternatively a layer comprising aluminum particles and / or silver particles (each up to a few ⁇ large) and organic binder.
  • the joining layer may comprise a plurality of metals, e.g. B.
  • a heating of the semiconductor film and the bonding layer by means of pulsed laser radiation is provided.
  • pulsed laser radiation z. B. with ns, ps or fs pulses, has advantages in terms of achieving extremely high performance due to the low pulse duration.
  • At least one locally limited eutectic compound is formed whose extent is less than the lateral extent of the semiconductor film and the substrate with the joining layer.
  • the localized eutectic bond can be formed by irradiation at a single position or multiple irradiations on adjacent ⁇ Posi tions. It forms an inseptic contact section, in which the semiconductor film and the bonding layer are materially connected. The area surrounding the Maisab ⁇ -section, the semiconductor film touching, possibly with further intermediate layers and loose the bonding layer.
  • the at least one contact portion is advantageously for the production at least one electrical contact and simultaneously used for locally limited doping of the semiconductor material.
  • the laser irradiation is repeated at different positions, so that at least two contact sections are formed.
  • the pulsed laser irradiation can be repeated along lines or areas, so that a plurality of contact portions, for. B. at least 100, preferably at least 1000 or even at least 10,000 contact portions on a semiconductor film of size 10 cm * 10 cm are formed. With pulsed lasers high processing speeds are possible, so that z. B. 10,000 contact sections per second are generated.
  • the contact sections may, for. B. have a distance of 1 mm.
  • the interconnected portions of the semiconductor film and the substrate preferably extend over at least 50% of the area of the semiconductor film, more preferably over at least 90% of the area of the semiconductor film.
  • the locally limited eutectic compounds may have such small spacings that a surface-extended connection of the semiconductor foil to the bonding layer is formed.
  • the bonding layer can cover the entire substrate in a planar manner.
  • a structured joining layer which comprises a multiplicity of joining layer sections which are separated relative to one another.
  • the provision of the bonding layer sections can be advantageous for the formation of delimited contact sections for contacting and / or doping purposes.
  • the joining layer sections can all uniformly contain the same metal or different metals.
  • the joining layer sections can be Divorce of the at least one material of the bonding layer on the substrate, for example by a masking, are formed.
  • the substrate after the substrate has been provided with a surface-applied bonding layer, it can be locally structured and divided into a plurality of bonding layer sections.
  • the semiconductor film may have on one or both sides a dielectric passivation layer.
  • the passivation layer can be arranged on the side of the semiconductor film facing away from the substrate and have a passivating effect as well as a reduction in reflection.
  • the passivation layer is arranged on the side of the semiconductor film facing the substrate.
  • the laser-assisted joining according to the invention can take place through the passivation layer.
  • the laser irradiation may preferably occur at individual positions distributed over the surface of the substrate, so that a plurality of contact portions are formed, which project from the joining layer or the bonding layer sections through the dielectric passivation layer to the semiconductor film, wherein an overwhelming surface portion of the substrate is not irradiated.
  • This allows the provision of a plurality of mutually insulated contacts with a lateral extent in the range of 0.5 ym to 100 ⁇ .
  • the conventional technique according to V. Gazuz et al. Are the areas of the contacts and thus possibly disturbing effects of the contacts, such. B. interfering recombination effects minimized.
  • they can be manufactured with increased efficiency.
  • the semiconductor film can be at least one or both sides a doping layer, the z.
  • boron or phosphorus contains.
  • the doping layer is arranged on the substrate-facing side of the semiconductor film and the joining layer is divided into a plurality of bonding layer sections, this makes it possible to provide doping regions on the semiconductor film on one side.
  • first doping regions with a first conductive type can be generated on the side of the semiconductor film facing the substrate.
  • the semiconductor component is characterized in that, on the side of the semiconductor film facing the substrate, the first doping regions of the first conductivity type with the first group of the joining layer sections, the second doping regions of the second opposite conductivity type with the second group For historical sections are connected.
  • the semiconductor film may additionally have a first doping region with a first conductive type on the side facing away from the substrate exhibit.
  • the laser irradiation of the first group of the bonding layer sections generates contact sections which project through the semiconductor film to the first doping region.
  • the laser irradiation of the doping layer generates second doping regions with a second conductivity type opposite to the first conductivity type, which are each connected to joining layer sections of a second group of bonding layer sections.
  • the semiconductor component is accordingly characterized in that the first group of bonding layer sections are connected to the first doping region (3.1) via the contact sections projecting through the semiconductor film and the second doping regions are on the side facing the substrate the semiconductor foil are connected to the second group of the bonding layer sections.
  • the joining layer sections of the first and the second group of joining layer sections may each comprise different metals, e.g. As aluminum and silver included.
  • this makes it possible that the contacting of both p- and n-silicon can take place with a similar Al-containing layer. While in conventional techniques p-type silicon is often contacted with Al, contacting by means of Al of n-type silicon has hitherto been uncommon. A suitable electrical contact can preferably be achieved in particular if locally a high n-type doping (n ++) (> 10 18 cm -3 ) is produced.
  • the bonding of the semiconductor foil with the bonding layer or the bonding layer portions forms an aluminum doping region in the semiconductor material to form a p-type emitter.
  • the Semiconductor film comprises p-type silicon and the joining layer or the joining layer sections contain aluminum, formed by the connection of the semiconductor film with the bonding layer or the bonding layer sections, an aluminum doping region in the semiconductor material for producing an electron-reflecting layer (back surface field, BSF).
  • the compound of the semiconductor film with the substrate takes place in an inert or a reducing atmosphere, for. B. in nitrogen, argon or forming gas (inert gas with a hydrogen additive) or in a vacuum.
  • an inert or a reducing atmosphere for. B. in nitrogen, argon or forming gas (inert gas with a hydrogen additive) or in a vacuum.
  • the semiconductor film and the substrate are pressed against each other during the laser irradiation under the action of a mechanical force.
  • the mechanical force may be applied locally at the location of exposure to the laser irradiation or to extended portions of the semiconductor foil and the substrate.
  • the mechanical force may be formed by the weight of the semiconductor film or the substrate when they are respectively placed on the substrate or on the semiconductor film.
  • a weight body can temporarily be placed on the stack of semiconductor film and substrate to strengthen the mechanical force.
  • the weight body is z. As a plane-parallel plate, which is transparent to the laser and a thickness of z. B. 0.2 to 5 cm.
  • a local effect of the mechanical force at the location of the action of the laser irradiation can, for. B. by a locally acting gas stream, in particular inert gas stream can be achieved. It can, for. Example, be provided with a nitrogen gas nozzle, with which the gas stream is directed to the location of the laser irradiation.
  • the nozzle may be combined with a laser head, as is known from conventional laser cutting of metals. Alternatively, the nozzle may be operated separately from the laser on the opposite side of the stack of semiconductor foil and substrate to force the semiconductor foil and the substrate together at the location of one another.
  • FIG. 1 shows embodiments of the production according to the invention of a semiconductor component with a planar eutectic connection
  • FIG. 2 shows an embodiment of the production according to the invention of a semiconductor component with a plurality of eutectic compounds
  • FIG. 3 shows embodiments of a semiconductor component according to the invention
  • Figures 4 and 5 further embodiments of the inventive production of a semiconductor device having a plurality of eutectic compounds
  • FIG. 6 shows an embodiment of solar cells according to the invention with electrical series connection
  • Figures 7 and 8 further embodiments of the inventive production of a semiconductor device with multiple eutectic compounds.
  • a thin semiconductor film for.
  • the semiconductor film is laser beamed onto a stable substrate, e.g. Glass or glass-coated polymer.
  • a stable substrate e.g. Glass or glass-coated polymer.
  • an aluminum-containing joining layer is melted locally.
  • a stable mechanical connection, at least one electrical contact and at least one heavily doped region in the Si foil, which is required for the function of the Si solar cell, are produced at the same time.
  • the semiconductor device has a sheet-like sandwich structure with a first side on which the substrate is located and which is referred to below as the rear side of the semiconductor device or in particular of the substrate, and with a second, opposite side the semiconductor foil is located, which is referred to below as the front side of the semiconductor component or in particular of the semiconductor foil.
  • the sides of the semiconductor film and the substrate facing each other are also referred to as contact sides of the semiconductor film and the substrate, respectively.
  • the front side is typically the illumination side of the solar cell, with transparent
  • the substrate 1 is made of glass, for. B. borosilicate glass with a thickness of z. B. 1 mm, on one side with an aluminum-containing joining layer 2 see.
  • the joining layer 2 can be applied to the surface of the substrate 1 by vacuum vapor deposition of aluminum or screen printing of an Al-containing paste with a thickness of 5 ⁇ m, for example.
  • an n-type silicon semiconductor film 3 is then applied with a thickness of 50 ⁇ , z. B. launched.
  • the semiconductor film 3 may also be previously coated on its contact side with aluminum.
  • the doping layer 4 comprises z. B. a thin film one phosphorus-containing solution or paste having a thickness of z. B. 50 nm.
  • the area of the semiconductor film 3 is smaller than the area of the substrate 1 with the bonding layer 2, so that the bonding layer 2 is exposed at the edge of the semiconductor film 3. In the exposed section of the bonding layer 2, space is created for a contact electrode (see 2., 3.).
  • the arrangement is irradiated from the back with a laser (LI or L2).
  • the Al bonding layer 2 is locally heated above the eutectic temperature of the Al-Si system (577 ° C). To suppress an oxidation of the aluminum, it may be expedient to carry out the process in an inert or reducing atmosphere or alternatively in a vacuum.
  • FIG. 1 illustrates two variants for the second step (2).
  • irradiation with the laser LI is provided such that only the eutectic connection 2.1 is formed.
  • the power of the laser LI and its focusing are adjusted so that the local heating beyond the eutectic temperature is limited to the bonding layer 2 and the adjacent part of the semiconductor film 3.
  • a laser LI is preferably used for generating short-pulse radiation (pulse duration: 100 ns).
  • Al doped silicon (p + -Si) is generated in the doping region 3.1.
  • a P-doped doping region 3.2 (n + -Si) is produced on the front side of the semiconductor film 3.
  • a further laser irradiation with a laser L3 is provided.
  • the laser L3 is preferably directed from the front side to the doping layer 4 and the semiconductor film 3. Local heating occurs under the effect of the laser radiation of the laser L3, so that P atoms diffuse out of the doping layer 4 into the semiconductor film 3 and form the doping region 3.2.
  • the eutectic compound 2.1 between the bonding layer 2 and the semiconductor film 3 with the formation of the first doping region 3.1 and the formation of the second doping region 3.2 are produced together with a single laser irradiation.
  • the laser L2 With the laser L2, the eutectic temperature in the bonding layer 2 and the adjoining part of the semiconductor film 3 is exceeded, and at the same time causes such a heating in the doping layer 4 that locally the P atoms from the doping layer 4 diffuse into the semiconductor film 3.
  • a laser L2 is preferably used for generating long-pulse radiation (pulse duration: 10 s).
  • the semiconductor device 10 is present, in the semiconductor (semiconductor film 3) with the first and second doping regions 3.1, 3.2 a pn junction is formed.
  • the second doping region 3.2 may have advantages for decreasing front surface recombination.
  • the semiconductor device 10 may be contacted be applied by in each case a contact electrode 6.1, 6.2, for example made of silver, on the exposed portion of the bonding layer 2, for example at 2.2, and on the second doping region 3.2, for example at 3.3.
  • a planar formation of the eutectic connection 2.1 is provided by a repeated laser irradiation
  • the formation of the eutectic connection can be provided in individual contact sections 2.3, as illustrated in FIG.
  • the substrate 1 is provided with a first joining layer 2.4.
  • the semiconductor film 3 is provided on the contact side facing the substrate 1 with a dielectric passivation layer 5 and a further bonding layer 2.5.
  • the semiconductor film 3 is provided with a doping layer 4 (see FIG. 1).
  • the passivation layer 5 consists for example of silicon nitride, with a thickness of eg 50 nm by PECVD (plasma-enhanced chemical vapor deposition) is applied to the semiconductor film 3.
  • PECVD plasma-enhanced chemical vapor deposition
  • the second joining layer 2.4 on the passivation layer 5 consists, for example, of aluminum with a thickness of, for example, 1 ⁇ m.
  • the semiconductor film 3 with the passivation layer 5, the bonding layer 2 and the doping layer 4 is placed on the substrate 1, so that the first and second bonding layers 2.4, 2.5 touch.
  • the arrangement is then irradiated from the back with a laser LI.
  • the locally molten aluminum of the first and second joining layers 2.4, 2.5 penetrates the passivation layer 5, so that the contact sections 2.3 are formed.
  • the contact sections 2.3 the mechanical joining and the electrical contact between the bonding layers 2.4, 2.5 and the semiconductor film 3 and the local aluminum doping (first doping regions 3.1) of the semiconductor film 3 form.
  • Doping p-type silicon (p + -Si) formed.
  • a local P doping of the front side of the semiconductor film 3 opposite the substrate 1 takes place.
  • a laser irradiation with a laser L2 is provided from the front side, under whose action P atoms are formed of the doping layer 4 diffuse into the semiconductor film 3 and form the second, n-type doping regions 3.2 (n + -Si).
  • P atoms are formed of the doping layer 4 diffuse into the semiconductor film 3 and form the second, n-type doping regions 3.2 (n + -Si).
  • locally limited doping regions 3.2 are generated according to FIG.
  • a semiconductor device 10 which has a patterned pn junction.
  • the contacting of the semiconductor component takes place by the application Contact electrodes (not shown), as described above with reference to Figure 1.
  • FIG. 3 shows, by way of example, embodiments of solar cells 10 according to the invention, which can be produced by the method according to the invention.
  • the solar cell 10 comprises the substrate 1 with the bonding layer 2, the semiconductor film 3 with the first doping region 3.1 and the second doping region 3.2, and the contact electrodes 6.1, 6.2.
  • the solar cell 10 comprises the substrate 1 with the bonding layer 2, the semiconductor film 3 with the first doping region 3.1 and the second doping region 3.2, and the contact electrodes 6.1, 6.2.
  • the solar cell 10 comprises the substrate 1 with the bonding layer 2, the semiconductor film 3 with the first doping region 3.1 and the second doping region 3.2, and the contact electrodes 6.1, 6.2.
  • an antireflection layer 7 for example of silicon nitride with a thickness of, for example, 70 nm.
  • AR layer 7 for example of silicon nitride with a thickness of, for example, 70 nm
  • the semiconductor foil 3 in this variant of the invention is an n-conducting Si foil.
  • the first doping region 3.1 comprises Al-doped Si, so that a p-type emitter of the solar cell 10 is formed.
  • the second doping region 3.2 is n-doped, so that n + -Si is formed.
  • the second doping region 3.2 serves to reduce the front-side surface recombination and to improve the electrical properties of the front-side contact electrodes 6.2.
  • the back-side contact electrodes 6.1 are formed, for example, on freestanding sections of the bonding layer 2.
  • FIG. 3B illustrates a solar cell 10 which contains a p-doped Si foil as semiconductor foil 3.
  • the solar cell 10 comprises the substrate 1 made of glass with the joining layer 2 made of aluminum, the semiconductor film 3 with the first doping region 3.1 and the second doping region 3.2 and the contacts 6.1, 6.2 in conjunction with the bonding layer 2 or the second doping region 3.2.
  • the invention provides for the rear side Al doping (first doping region 3.1) of the production of a so-called "back surface field" (BSF) for reducing rear surface recombination.
  • BSF back surface field
  • the front-side P-type doping serves as the n-type emitter of the solar cell 10.
  • FIG. 3C shows a further embodiment of the solar cell 10 according to the invention, which can be produced according to the method in FIG.
  • the semiconductor film 3 with the passivation layer 5 and the second bonding layer 2.5 is bonded.
  • the contact sections 2, 3 are formed, at which p-type emitters (doping regions 3.1) are provided in the semiconductor film 3 by the Al doping.
  • an antireflection layer 7 and contact electrodes 6.2 are provided on the free upper side of the solar cell 10 (front or illumination side), as in FIG. 3A.
  • FIG. 4 schematically illustrates a further embodiment of the inventive production of a semiconductor component 10 with a structured eutectic connection between a semiconductor film and a substrate.
  • a semiconductor device is a
  • the substrate 1 and the semiconductor film 3 are provided.
  • the substrate 1 comprises eg Borsi ⁇ likat glass, on the surface of the bonding layer 2 is formed.
  • the joining layer 2 consists, for example, of aluminum with a thickness of, for example, 10 ⁇ m.
  • the semiconductor film 3 is composed of n-conducting silicon, which for example has a phosphorus concentration in the range of 0.5 '10 16 cm -3 to 5' 10 16 cm "3.
  • the semiconductor film 3 carries a dielectric passivation layer 5 and a arrival tireflex layer 7, both of which act passivating.
  • the anti-reflection layer 7 acts at the same reflection-reducing.
  • the layers 5, 7 are made for example of SiN, Si0 2, A1 2 0 3, SiC, or a combination thereof.
  • the thickness of the For example, layers 5, 7 are in each case 70 nm.
  • a doping layer 4 is provided on the contact side of the semiconductor foil 3 facing the substrate 1.
  • the doping layer 4 forms a dopant source, for example comprising phosphorus-containing glass.
  • the substrate 1 and the semiconductor foil 3 are processed while they are not yet connected to each other.
  • the processing in step 2 serves to form the n-type doping regions 3.2 on the contact side of the semiconductor film 3 facing the substrate 1 and the structuring of the bonding layer 2 into electrically separate joining layer sections 2.6, 2.7.
  • the doping of the semiconductor film 3 takes place in step 2, in that the doping layer 4 is locally heated by irradiation with a laser LI. By heating the doping layer 4, doping atoms diffuse through the passivation layer 5 into the semiconductor film 3. For example, a heavily doped silicon (n ++ -Si) having a P concentration of 10 20 cm -3 or higher is formed.
  • the structuring of the bonding layer 2 to form the first and second joining layer sections 2.6, 2.7 takes place by ablation by irradiation with a second laser L2.
  • the laser L2 preferably comprises a short-pulse laser with a pulse duration of less than 100 ns.
  • FIG. 4 (3) exemplary schematically illustrates three joining layer sections 2.6 and two joining layer sections 2.7.
  • first or second joining layer sections 2.6 are selected as a function of the specific application, in each case a first group of bonding layer sections (2.6) for connection to the semiconductor material of the semiconductor film 3 outside the doping regions 3.2 and a second group of joining layer sections (2.7) are provided for connection to the doping regions 3.2 in the semiconductor material of the semiconductor film 3.
  • the joining layer sections 2.6, 2.7 extend z. B. strip-shaped along the surface of the substrate 1 (see Figure 6).
  • step 3 to produce the back-contact solar cell 10 the substrate 1 and the semiconductor film 3 are connected to one another.
  • the semiconductor film 3 is placed on the substrate 1 with the doping regions 3.2 facing the substrate 1 and subjected to local laser irradiation.
  • contact sections 2.3 with two different
  • first doping regions 3.1 are formed in the semiconductor foil 3.
  • the phosphorus glass present in the vicinity of the first contact sections 2.3 does not disturb the formation of the first doping regions 3.1, since the P atoms diffuse considerably more slowly than the Al atoms. Atoms from the joining layer 2. As a result, 2.6 p contacts are formed at the first joining layer sections.
  • FIG. 5 illustrates a further variant of the production of a semiconductor component with a structured eutectic connection between the substrate 1 and the semiconductor film 3.
  • the substrate 1 and the semiconductor film 3 are provided.
  • the substrate 1 comprises a polymer film, for example of EVA, on the surface of which an amorphous layer 1.1 (glass or glass-ceramic layer) and a bonding layer 2 are formed.
  • the amorphous layer 1.1 consists for example of Si0 2 , SiN or Sic, with a thickness of z. B. 1 ⁇ .
  • the joining layer 2 is formed on the amorphous layer 1.1.
  • the semiconductor film 3 carries on its contact side a doping layer 4 of phosphorus-containing glass and a dielectric passivation layer 5.
  • the semiconductor film 3 has a first heavily doped impurity region 3.1 on the front side facing away from the substrate 1 (FIG. p ++ layer).
  • the first doping region 3.1 is formed by diffused boron atoms with a doping concentration of z. B. 5 ⁇ 0 19 cm -3 formed.
  • a further dielectric layer is provided as an antireflection layer 7.
  • a highly doped second doping region 3.2 (n ++ -Si) in the semiconductor film 3 is produced by a first laser irradiation with the laser LI and by a second laser irradiation with the laser L2 Structuring the joining layer 2 into individual joining layer sections 2.6, 2.7.
  • the semiconductor film 3 is joined to the substrate 1, wherein a back irradiation with the laser L4 causes such a heating of the joining layer sections 2.6, that the Al atoms through the semiconductor film 3 to the p-type diffuse first doping region 3.1 and form contact sections 3.2.
  • a back irradiation with the laser L4 causes such a heating of the joining layer sections 2.6, that the Al atoms through the semiconductor film 3 to the p-type diffuse first doping region 3.1 and form contact sections 3.2.
  • p-contacts are formed.
  • a front-side irradiation with the laser L3 is provided in order to connect the bonding layer section 2.7 to the highly doped second doping zone 3.2.
  • n contacts are formed. Ent ⁇ speaking a flat emitter structure is formed in the embodiment according to FIG 5 so that the p-contacts greater distances from the n-contacts, including in the range of 0.3 mm to 3 mm, than in the embodiment according to FIG. 4.
  • FIG. 6 illustrates by way of example an embodiment of a semiconductor component (solar cell 10) according to the invention, wherein two separate semiconductor foils 3.4, 3.5 are bonded to the substrate 1 by the method according to FIG.
  • the joining layer is structured such that three joining layer sections 2.6, 2.7 and 2.8 are formed.
  • Each of the bonding layer sections 2.6, 2.7 and 2.8 comprises an array of parallel strips electrically connected at one end along the length of which n contacts or p contacts are formed by the method of FIG.
  • the joining layer sections 2.6, 2.7 and 2.8 are arranged interlocking so that strips alternate with n contacts and strips with p contacts.
  • the first joining layer section 2.6 comprises strips with p contacts over the first semiconductor foil 3.4
  • the third joining layer section 2.8 strips with n contacts over the second semiconductor foil 3.5
  • the second, middle joining layer section 2.7 strips with n contacts over the first semiconductor foil 3.4
  • a solar cell 10 is formed with a series connection of the electrical contacts, which is designed for a highly effective dissipation of generated charge carriers.
  • the bonding layer (s) each contain a predetermined metal selected for the desired doping of the semiconductor film.
  • different metals can be used to form different joining layer sections, as shown schematically in FIG.
  • FIG. 7A are the Substrate 1 and the semiconductor film 3 before the mutual connection schematically illustrated.
  • the substrate 1 comprises glass, on the surface of which joining layer sections 2.6, 2.7 of different metals are formed.
  • the middle joining layer section 2.7 comprises aluminum with a thickness of 10 .mu.m, while the outer joining layer sections 2.6 comprise silver with a thickness of 3 .mu.m.
  • the application of the bonding layer sections 2.6, 2.7 is effected by a local deposition of the metal layers and possibly by an electrical separation of the metal layers by a
  • the semiconductor film 3 is formed from n-conducting silicon, on whose contact side facing the substrate 1 a passivation layer 5 and highly doped n-type doping regions 3.2 are formed. On the opposite side, a highly doped p-type impurity region 3.1 (p ++ -Si) is formed, which is covered by an antireflective layer 7.
  • the mutual connection of the substrate 1 with the semiconductor film 3 is illustrated analogously to the method in FIG. 5 (3).
  • the metal of the bonding layer sections 2.6 diffuses under the action of laser irradiation with the laser L7 into the n ++ -type doping region 3.2.
  • the metal of the bonding layer section 2.7 diffuses under the effect of laser irradiation with the laser L8 through the semiconductor film 3 to the doping region 3.1.
  • a p ++ -type doping region 3.4 is formed in the p ++ .
  • FIG. 8A On the upper A first joining layer section 2.7 made of aluminum is arranged on the surface of the substrate 1 made of glass, which extends over the substrate surface and is covered by the insulating intermediate layer 2.9.
  • the bonding layer sections 2.6 are formed from a further metal, eg silver.
  • the joining layer sections 2.6 are structured, for example, by ablation.
  • the semiconductor foil 3 is constructed as shown in Fig. 7A.
  • the laser bonding with a first laser L8 forms the contact between the bonding layer sections 2.6 and the highly doped n-type doping regions 3.2 (n ++ -Si) of the semiconductor film 3.
  • the laser irradiation with a second laser L9 forms the contact between the bonding layer section 2.7 and the highly doped p-type doping region 3.1 (p ++ -Si). Which of the joining layer sections 2.6 or 2.7 are contacted can be determined by the choice of the irradiation side, ie by the irradiation from the rear or front side.
  • the irradiation of the bonding layer sections 2.6 can also take place from the side of the substrate 1 (see dotted arrow). In this case, the joining layer section 2.7 is irradiated with a wavelength which is not negligibly or only negligibly absorbed in the bonding layer section 2.6.
  • the invention offers the following advantages.
  • thin semiconductor wafers or films can be processed into semiconductor components, such as solar cells or diodes.
  • no high processing temperatures are required.
  • the laser irradiation for local heating of the bonding layer and the semiconductor film can be directed and / or focused by simple optical means in the areas of the desired contact portions.
  • Semiconductor devices according to the invention can be produced with a multiplicity of substrate materials. In particular, glass substrates can be used without special demands being placed on the thermal expansion coefficient or the temperature resistance.
  • Semiconductor material In particular, p- or n-type silicon can be used.
  • the contacting of the doping regions of the semiconductor film can be realized inexpensively.
  • a one-sided (back) contacting is possible. This simplifies an encapsulation of the semiconductor device in such a way that only the semiconductor film, if necessary with an antireflection layer, is exposed.
  • the substrate can be used for encapsulation.
  • Solar cells produced according to the invention can be produced with a particularly high degree of efficiency (> 20%) because high-quality silicon can be used, a locally selective and therefore highly efficient cell design can be realized by laser processing, and the process is suitable for the processing of n-silicon, that is pulled by the Czochralski method.

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Abstract

L'invention concerne un procédé de fabrication d'un composant semi-conducteur (10), en particulier une diode ou une cellule solaire et comprend les étapes de mise à disposition d'un substrat (1), sur lequel est formée une couche d'assemblage (2, 2.4) contenant un métal, mise en place d'une feuille semi-conductrice (3) en un matériau semi-conducteur sur la couche d'assemblage (2, 2.4) et chauffage de la feuille semi-conductrice (3) et de la feuille d'assemblage (2, 2.4) à une température supérieure à la température eutectique d'une composition du métal et du matériau semi-conducteur, une liaison entre la feuille semi-conductrice (3) et la couche d'assemblage (2, 2.4) et via la couche d'assemblage (2, 2.4) au substrat (1) étant formée, le chauffage étant réalisé par un rayonnement laser à action locale. Un composant semi-conducteur, en particulier une diode ou une cellule solaire, fabriqué par le procédé, est également décrit.
EP12712068.1A 2011-03-28 2012-03-14 Fabrication d'un composant semi-conducteur par liaison soutenue par un laser Withdrawn EP2691986A1 (fr)

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DE201110015283 DE102011015283B4 (de) 2011-03-28 2011-03-28 Herstellung eines Halbleiter-Bauelements durch Laser-unterstütztes Bonden und damit hergestelltes Halbleiter-Bauelement
PCT/EP2012/001145 WO2012130392A1 (fr) 2011-03-28 2012-03-14 Fabrication d'un composant semi-conducteur par liaison soutenue par un laser

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CN106026904B (zh) * 2016-05-19 2019-02-15 湖南红太阳新能源科技有限公司 一种耐热斑效应的光伏组件

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