Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M8/00—Fuel cells; Manufacture thereof
  • H01M8/16—Biochemical fuel cells, i.e. cells in which microorganisms function as catalysts
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
  • H01G11/52—Separators
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
  • H01G11/78—Cases; Housings; Encapsulations; Mountings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M8/00—Fuel cells; Manufacture thereof
  • H01M8/10—Fuel cells with solid electrolytes
  • H01M8/1097—Fuel cells applied on a support, e.g. miniature fuel cells deposited on silica supports
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K5/00—Casings, cabinets or drawers for electric apparatus
  • H05K5/02—Details
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
  • Y02E60/13—Energy storage using capacitors
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
  • Y02E60/30—Hydrogen technology
  • Y02E60/50—Fuel cells

Definitions

• the invention relates to microelectronics, and more particularly to boxes capable, for example, but not exclusively, of being used for producing biopiles.
• a biopile also known as the Anglo-Saxon BioFuel Cell, is a fuel cell that uses enzymes or microorganisms such as bacteria to convert some of the available energy into a biodegradable substrate.
• a biopile comprises an electrode, forming anode, placed in contact with enzymes ensuring the transformation of the biodegradable substrate, for example glucose, especially electrons captured by the anode.
• the biopile also comprises a cathode at which an electron acceptor, for example air, is reduced, for example in water.
• a potential difference therefore appears between the anode and the cathode when they are connected to a load.
• a housing capable of being used in particular but not exclusively as part of a biopile, which is industrially feasible, and compatible with implantation in the human body.
• a housing comprising a body comprising a first silicon element and a second porous silicon element, at least a first cavity formed at least in the porous silicon, a first electrically conductive contact zone and electrically coupled to at least a portion of at least one inner wall of said at least one first cavity, a second electrically conductive contact zone and electrically coupled to a portion of the housing extending at least in the second element, different from the inner walls of said at least a first cavity, the two contact zones being mutually electrically isolated.
• the body furthermore comprises at least a second cavity formed at least in the porous silicon, and said portion of the housing different from the internal walls of said at least one first cavity comprises at least a portion of at least one inner wall of said at least one second cavity.
• said portion of the housing comprises pores of porous silicon.
• the first contact zone is situated above a first face of the first element of the body, and the body comprises first means. electrically conductive bonding means extending through the first member from said first contact zone to said at least a portion of said at least one inner wall of said at least one first cavity.
• the electrically conductive means may be formed of silicon, it is preferred that the first bonding means comprise a first region formed of a metal silicide, surrounded by an insulating region. This makes it possible to avoid oxidation, in particular when the electrically conductive connection means are in contact with a liquid active product.
• said at least one first cavity opens on the free face of the second element, opposite said first face of the first element.
• the second contact zone is located above said first face of the first body element, and the body comprises second electrically conductive connecting means extending through said first element from said second contact zone. up to said portion of the housing.
• these second connecting means comprise a second region formed of a metal silicide.
• This second region is also preferably surrounded by an insulating region.
• this second cavity can lead to the free face of the second element opposite to said first face of the first element.
• said at least one first cavity and said at least one second cavity open on the same free face of the body.
• said at least one second cavity may open on said first face of said first element.
• said at least one first cavity and said at least one second cavity open on two opposite sides of the body.
• the pore size of the porous silicon is advantageously of the order of a few nanometers and the housing has, according to one embodiment, a size compatible with implantation in the human body.
• a device comprising a housing as defined above, a first active product, for example a compacted enzyme powder, contained in said at least one first cavity, a second active product, for example another compacted enzymatic powder, contained in said at least one second cavity, first means for sealing said at least one first cavity and second means for closing said at least one second cavity.
• a first active product for example a compacted enzyme powder
• a second active product for example another compacted enzymatic powder
• a device comprising a housing as defined above, a first active product contained in said at least one first cavity, and first closure means of said at least one first cavity.
• At least one of the first and second active products comprises, for example, a powder whose grain size is greater than the pore size of the porous silicon.
• the porous silicon therefore acts advantageously as a membrane.
• the device as defined above, as a biopile, when an active fluid, for example a biological fluid, circulates through the porous silicon to interact with the active product (s) contained in said cavity or cavities, a potential difference being generated between the two electrically conductive contact zones.
• an active fluid for example a biological fluid
• FIG. 1 schematically illustrates a first embodiment of a housing according to the invention
• Figure 2 schematically illustrates a first embodiment of a device according to the invention
• Figures 3 to 7 schematically illustrate an example of the manufacture of a housing according to the invention
• FIGS. 8 to 9 schematically illustrate a second embodiment of a housing according to the invention
• FIG. 10 schematically illustrates a second embodiment of a device according to the invention
• FIG. 11 schematically illustrates a third embodiment of a box according to the invention
• FIG. 12 schematically illustrates a third embodiment of FIG. a device according to the invention.
• the reference BT denotes a housing comprising a body 1.
• This body 1 comprises a first silicon element 10 and a second porous silicon element 20.
• the two elements 10 and 20 are contiguous to each other.
• a first cavity 31 is formed in the second porous silicon element 20 and opens on the free face F2 of the second element.
• a second cavity 32 is formed in the second porous silicon element 20 and also opens on the free face F2 of the second element.
• first electrically conductive contact zone 41 Above the first face F1 of the first element 10, face F1 which is opposite the free face F2 of the second element, there are provided a first electrically conductive contact zone 41 and a second electrically conductive contact zone 42.
• the first electrically conductive contact zone 41 is electrically coupled to a portion 310 of the bottom internal wall of the first cavity 31.
• the second electrically conductive contact zone 42 is electrically coupled here to a portion 320 of the bottom internal wall of the second cavity 32.
• the electrically conductive contact zone or zones are electrically coupled to several internal walls of the corresponding cavities.
• the first electrically conductive contact zone 41 here comprises a first metal contact pad 412 while the second electrically conductive contact zone 42 comprises a second metal contact pad 422.
• the body 1 also comprises first electrically conductive connection means 410 extending through the first element 10 from the first contact zone 412 to the portion 310 of the bottom internal wall of the first cavity 31.
• first connecting means here comprise a first region 410 formed of a metal silicide, for example titanium silicide, surrounded by an insulating region 411.
• the second electrically conductive connection means here comprise a second region 420 also formed of a metal silicide, for example also titanium silicide, surrounded by an insulating region 421.
• the first contact pad 412 comes into contact with the first silicide region 410 through an opening formed in an insulating layer 45, for example a silicon nitride layer.
• the second contact pad 422 comes into contact with the second silicide region 420 through another opening of this layer 45.
• an insulating layer 43 for example silicon dioxide.
• the two contact zones 41 and 42 are therefore mutually electrically isolated.
• the dimensions of the housing BT are, in this embodiment, advantageously chosen so that the housing BT can be easily implanted in the human body.
• the length L of the LV housing is of the order of a few millimeters, for example between 1 and 20 mm while the height H of housing is of the order of a few micrometers, for example between 100 and 750 micrometers and that the depth P (width) of the housing BT is of the order of a few millimeters, for example between 1 and 20 mm.
• the pore size of the porous silicon is, in this embodiment, of the order of a few nanometers, typically from 2 to 3 nanometers.
• housing has been shown here in parallelepiped shape, its shape could be any, for example cylindrical.
• the reference DIS designates a device that can be used as a battery. More specifically, in the example described here, the first cavity 31 is filled with a first active product PA1, for example a product in the form of compacted powder, while the second cavity is filled with a second active product PA2, for example example also a compacted powder.
• a first active product PA1 for example a product in the form of compacted powder
• a second active product PA2 for example example also a compacted powder.
• a sealing means 5 such as for example a silicon wafer or a glass plate, is bonded to the face F2 of the housing by any known means.
• An active fluid LQA or electrolyte, can then flow through the porous silicon by penetrating into the device by all the free faces of the second porous silicon element 20, to react with the active products PA1 and PA2.
• the active fluid LQA can also escape through other free faces of the porous silicon.
• the grain size of the powders PA1 and PA2 as well as the pore size of the porous silicon are adjusted so that the active products PA1 and PA2 do not escape cavities 31 and 32, while being able to react with the active fluid LQA.
• the pore size of the porous silicon may be larger than 2 or 3 nanometers if the size of the powder grains allows it.
• first silicide region 410 is in contact with the active product PA1 while the second silicide region 420 is in contact with the active product PA2.
• the first contact zone electrically conductive 41 then forms, for example, the anode AN of the cell, while the second contact zone 42 forms, for example, the cathode CT of the cell.
• the DIS device When the housing is of such size that it can be implanted in the human body, the DIS device can then be used as a biopile. It is then possible, by way of example, to use as active products PA1 and PA2 and as liquid LQA, those described in the article by Philippe Cinquin mentioned above.
• a BT housing can be easily made using conventional techniques known per se, used in microelectronics for the manufacture of integrated circuits.
• LV boxes are made simultaneously from the same silicon wafer. Then, after completion of the constituents of the housing, the plate is cut so as to individualize the housings obtained.
• the housings can for example be made with a 0.35 micron technology, on semiconductor wafers or "wafers" of 200 mm diameter, or in plates of 300 mm diameter with advanced CMOS technology.
• FIGS. 3 to 7 illustrate an exemplary embodiment of a housing such as that illustrated in FIG. 1.
• FIGS. 3 to 7 illustrate an exemplary embodiment of a housing such as that illustrated in FIG. 1.
• FIGS. 3 to 7 illustrate an exemplary embodiment of a housing such as that illustrated in FIG. 1.
• FIGS. 3 to 7 illustrate an exemplary embodiment of a housing such as that illustrated in FIG. 1.
• FIGS. 3 to 7 illustrate an exemplary embodiment of a housing such as that illustrated in FIG. 1.
• FIGS. 3 to 7 For the sake of simplification, only the embodiment of a single housing will be described here.
• porous silicon is formed in the silicon substrate.
• porous silicon is obtained by electrochemical anodization of solid silicon in a solution of hydrofluoric acid (HF).
• porous silicon having a pore size of the order of a few nanometers, for example from 1 to 3 nanometers can be obtained by using anodized P-type doped silicon at a current density of 20 mA / cm 2 in a 35% solution of hydrofluoric acid.
• the structure illustrated in FIG. 3, comprising the first silicon element 10 having, for example, a height less than 10 microns, and the second porous silicon element 20 having a thickness of about 740, are obtained. microns for a total height of the two elements of the order of 750 micrometers.
• the doping of intrinsic silicon is for example 10 15 atoms / cm ⁇ Higher doping values (greater than 10 17 atoms / cm 3) may also be used.
• the insulating trenches 411 and 421 are formed using a conventional etching mask, not shown here.
• TSV Through-Silicon Vias.
• trenches having a depth of the order of 3 to 10 microns were formed and filled with an insulating material, for example silicon dioxide.
• a mask is defined for the formation of the silicide zones 410 and 420.
• This mask may be formed of an insulating layer, for example silicon nitride, the openings of which correspond to the bounded internal space. by insulating trenches 411 and 421.
• Silicon and porous silicon are then conventionally silicided through the mask 45 so as to obtain the silicide regions 410 and 420.
• the cavities 31 and 32 are produced using, for example, plasma chemical etching using a fluorocarbon compound (for example SF6 CF4) of to obtain cavities of desired depth and width.
• a fluorocarbon compound for example SF6 CF4
• the depth of the cavities may be of the order of 740 microns or more, while the width may be of the order of 80 microns.
• the bottom walls of the two cavities 31 and 32 formed here in the porous silicon therefore come into contact with the silicided zones at the portions 310 and 320 of these bottom walls.
• the etching operation can etch part of the insulating regions 411 and the silicide region 410.
• the contact pads 412 and 422 are then conventionally made by depositing metal in the orifices of the insulating layer 43 (FIG. 1).
• FIG. 8 illustrates another embodiment of the LV housing in which the two cavities 31 and 32 open on the two opposite faces F1 and F2 of the body.
• the first cavity 31 opens on the rear face F2 while the second cavity 32 opens on the front face Fl.
• the second silicide region 420 extends laterally to the cavity 32 (FIG. 8 and FIG. 9) so as to come into contact with a part of the lateral internal wall of this cavity 32.
• the silicide region 420 projects beyond the cavity 32 so that the contact pad 422 can come into contact with this silicide region 420 while allowing, as illustrated in FIG. 10, the application a cover 52, so as to close the cavity 32 after filling thereof by the second active product PA2.
• the device DIS of FIG. 10 also comprises, on the rear face, a cover 51 which closes off the first cavity 31 after it has been filled with the first active product PA1.
• covers 51 and 52 may for example be silicon or glass covers.
• the device DIS can also be used as a battery or as a biopile, again using the first contact 412 as the anode AN and the second contact 422 as the CT cathode.
• the size of the cavities may be different.
• Figure 11 illustrates another embodiment of the LV housing having a single cavity 31, or at most a set of several cavities 31 connected together.
• the second silicide region 420 opens directly into pores 322 of the porous silicon.
• the LV box of FIG. 11 can also be used as a component of a DIS device that can form a battery or a biopile.
• the active fluid LQA comes on the one hand, to interact with the silicide region 420 and on the other hand, with the active product PA1 itself in contact with the silicide region 410.
• the first electrical contact electrically coupled to the active product PA1 forms by For example, the anode AN while the second contact electrically coupled to the active fluid circulating in the porous silicon forms the cathode CT of the cell.
• the device can also be used as a biopile using an active product PA1 and an active fluid LQA suitable, for example those described in the article entitled "Sparks of Life" above.
• the devices which have just been described are intended to be used as biopiles, they may for example be housed in a pocket or an appropriate envelope itself implanted in the human body, in a manner similar to that described. in the article by P. Cinquin mentioned above.

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Life Sciences & Earth Sciences (AREA)
• Chemical & Material Sciences (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Electrochemistry (AREA)
• Sustainable Development (AREA)
• Sustainable Energy (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Manufacturing & Machinery (AREA)
• General Chemical & Material Sciences (AREA)
• Microbiology (AREA)
• Biochemistry (AREA)
• Apparatus Associated With Microorganisms And Enzymes (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=44370679

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• 2010
  • 2010-12-16 FR FR1060638A patent/FR2969392B1/fr not_active Expired - Fee Related
• 2011
  • 2011-12-12 JP JP2013543679A patent/JP2014505966A/ja active Pending
  • 2011-12-12 EP EP11797307.3A patent/EP2652831A1/de not_active Withdrawn
  • 2011-12-12 US US13/993,634 patent/US9219286B2/en not_active Expired - Fee Related
  • 2011-12-12 WO PCT/EP2011/072434 patent/WO2012080162A1/fr active Application Filing

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