EP2638375A1 - A miniature high sensitivity pressure sensor - Google Patents
A miniature high sensitivity pressure sensorInfo
- Publication number
- EP2638375A1 EP2638375A1 EP12755222.2A EP12755222A EP2638375A1 EP 2638375 A1 EP2638375 A1 EP 2638375A1 EP 12755222 A EP12755222 A EP 12755222A EP 2638375 A1 EP2638375 A1 EP 2638375A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- diaphragm
- sensor
- silicon
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000035945 sensitivity Effects 0.000 title abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- 230000002040 relaxant effect Effects 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 71
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 30
- 239000000377 silicon dioxide Substances 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 14
- 239000002210 silicon-based material Substances 0.000 claims description 14
- 230000006835 compression Effects 0.000 claims description 12
- 238000007906 compression Methods 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 10
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 10
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 10
- 239000000835 fiber Substances 0.000 abstract description 4
- 230000004044 response Effects 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000009530 blood pressure measurement Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
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- 238000005459 micromachining Methods 0.000 description 1
- 238000002324 minimally invasive surgery Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0076—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means
- G01L9/0077—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means for measuring reflected light
- G01L9/0079—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means for measuring reflected light with Fabry-Perot arrangements
Definitions
- the invention relates to pressure sensors, more specifically to miniature high sensitivity pressure sensors.
- Fabry-Perot based pressure sensors are therefore considered as those having the best potential for numerous applications, and among others the best to suit the needs for catheter and guidewire tip pressure measurement. Numerous methods and designs were proposed for pressure sensors such as those described in U.S. Pat. No. 4,678,904 and 7,689,071. P1611 PC00
- Fig. 1 shows a prior art construction of a Fabry-Perot sensor 1 for measuring pressure.
- a bi-directional fiber optic 2 guides the light signal toward a Fabry-Perot pressure chip (not numbered).
- the pressure chip is made of a glass substrate 4.
- One first partially reflective mirror 5 is deposited within a recessed cavity 3 performed on the top surface of the glass substrate 4.
- a diaphragm 7 is bonded or welded to the glass substrate 4, the internal surface of diaphragm 7 serving as a second mirror 6. Both mirrors 5, 6, spaced apart by a distance given by the depth of the recessed cavity 3, constitutes a Fabry-Perot cavity.
- the second mirror 6 bows toward first mirror 5 as function of an applied pressure, therefore changing the FP cavity length.
- the FP cavity length is an unambiguous function of pressure.
- Fig. 2 shows the shape of a typical diaphragm 7 deformed as a result of applied pressure.
- Fig. 3 shows a typical response of same pressure sensor having different diaphragm thicknesses.
- diaphragm thickness diminishes (from Si-No etch to Si-etch 4), although the sensitivity increases sharply when operating in lowest pressure range, i.e., around vacuum, the sensitivity saturates when operating in higher pressure range, around atmospheric pressure in this case.
- the increase of sensitivity of an absolute pressure sensor operating with a bias pressure is limited.
- the internal stress within the diaphragm increases as thickness of the diaphragm is reduced, potentially leading to diaphragm failure. Risk of diaphragm failure is obviously accentuated by a situation where the system operates with a bias pressure, such as atmospheric pressure.
- a bias pressure such as atmospheric pressure.
- the pressure of interest is centered at atmospheric pressure (typically 760 mmHg). Reducing the thickness of a diaphragm increases the sensitivity around 0 mmHga, but increasing the sensitivity around 760 mmHga remains limited.
- the description provides a miniature fiber optic pressure sensor design where sensitivity around specific biased pressure is optimized.
- the pressure sensor is a Fabry-Perot (FP) sensor comprising a substrate; and a diaphragm mounted on the substrate.
- the diaphragm has a center and comprises: a first layer comprising a first material; and a second layer comprising a second material.
- the second layer forms a dot.
- the dot is mounted on the first layer and is centered about the center of the diaphragm.
- the second material comprises internal pre-stresses to cause the center of the diaphragm to camber away from the substrate upon relaxing the internal pre- stresses.
- the first layer comprises an internal surface used for mounting on the substrate and an external surface opposite the internal surface, the second layer being mounted on the external surface and the second material being pre-stressed in compression.
- the internal compressive stresses of the second layer relax and move the diaphragm outward.
- the resulting shape of the diaphragm has the effect of increasing the pressure sensitivity of the sensor.
- the first material comprises silicon
- the second material comprises Si0 2 on the silicon material of the first layer.
- the second material comprises one of chromium, aluminium, titanium, iron, gold, titanium oxide, tantalum oxide, silicon dioxide, zirconium oxide, aluminium oxide and silicon nitride on the silicon material of the first layer.
- the first layer comprises an internal surface used for mounting on the substrate, the second layer being mounted on the internal surface and the second material being pre-stressed in tension.
- the first material comprises silicon
- the second material comprises chromium on the silicon material of the first layer.
- second material comprises one of chromium, aluminium, titanium, iron, gold, titanium oxide, tantalum oxide, silicon dioxide, zirconium oxide, aluminium oxide and silicon nitride of the first layer.
- the pressure sensor is a Fabry-Perot (FP) sensor comprises a substrate; and a diaphragm mounted on the substrate.
- the diaphragm has a center and comprises: a first layer comprising a first material; and a second layer comprising second material.
- the second layer forms a ring.
- the ring is mounted on the first layer and is centered about the center of the diaphragm.
- the second material comprises internal pre-stresses to cause a peripheral area about the center of the diaphragm to camber away from the substrate upon relaxing the internal pre-stresses.
- the first layer comprises an internal surface used for mounting on the substrate and an external surface opposite the internal surface, the second layer being mounted on the external surface and the second material being pre-stressed in tension.
- the first material comprises silicon
- the second material comprises chromium on the silicon material of the first layer.
- the second material comprises one of chromium, aluminium, titanium, iron, gold, titanium oxide, tantalum oxide, silicon dioxide, zirconium oxide, aluminium oxide and silicon nitride on the silicon material of the first layer.
- the first layer comprises an internal surface used for mounting on the substrate, the second layer being mounted on the internal surface and the second material being pre-stressed in compression.
- the first material comprises silicon
- the second material comprises S1O2 on the silicon material of the first layer.
- the second material comprises one of chromium, aluminium, titanium, iron, gold, titanium oxide, tantalum oxide, silicon dioxide, zirconium oxide, aluminium oxide and silicon nitride on the silicon material of the first layer.
- the sensitivity of miniature Fabry-Perot or capacitance pressure sensors is advantageously increased by way of the addition of internally pre-stressed material deposited, grown or otherwise present on the diaphragm, and where upon relaxing such internally stressed material induces a change in the shape of the diaphragm such that the sensitivity in presence of a bias pressure increases.
- FIG. 1 is a schematic cross-sectional view of a prior art Fabry-Perot pressure sensor
- FIG. 2 is a schematic cross-sectional view of a prior art pressure sensor diaphragm deformed by applied external pressure
- Fig. 3 is a graph illustrating the response of a prior art pressure sensor relative to applied pressure with various diaphragm thicknesses; P1611 PC00
- Fig. 4 is a cross-sectional view of a pressure sensor having an externally- mounted centrally-positioned pre-stressed dot diaphragm for diaphragm pressure biasing;
- Fig. 5 is a cross-sectional view of a Silicon-On-lnsulator substrate
- Fig. 6 is a cross-sectional view of the deformation encountered by layers of Si0 2 and a silicon device released from a Silicon-On-lnsulator (SOI) handle;
- SOI Silicon-On-lnsulator
- Fig. 7 is a cross-sectional view of the pressure sensor with a diaphragm made with both silicon device and SiO 2 layers;
- Fig. 8 is a cross-sectional view of a pressure sensor with a diaphragm made with silicon device layer and a central SiO 2 dot on the external surface;
- Fig. 9 is a graph illustrating pressure sensor response curves for various SiO 2 dot thicknesses (thick diaphragm);
- Fig. 10 is a graph illustrating pressure sensor response curves for various SiO 2 dot thicknesses (thin diaphragm);
- Fig. 1 1 is a graph illustrating pressure sensitivity of two different sensors at 760 mmHg for various SiO 2 dot thicknesses
- Fig. 12 is a cross-sectional view of a pressure sensor having an internally-mounted centrally-positioned pre-stressed dot diaphragm for diaphragm pressure biasing;
- Fig. 13 is a cross-sectional view of a pressure sensor with a diaphragm made with silicon and a ring having internal tensile stresses located on the peripheral section of the external surface for diaphragm biasing;
- Fig. 14 is a cross-sectional view of a pressure sensor with a diaphragm made with silicon and a ring having internal compressive stresses located on the peripheral section of the internal surface for diaphragm biasing.
- a pressure sensor such as the one shown in Fig. 1
- applied pressure is obtained by measuring the deflection of the diaphragm 7.
- the sensitivity of such a sensor is given by the deflection of the diaphragm relative to the applied pressure. The more the diaphragm deflects, better is the sensitivity.
- Fig. 3 shows that for a given diaphragm thickness, no more sensitivity improvement is possible even for thinner diaphragms. It is noted that the sensitivity at low pressure increases as the diaphragm becomes thinner, but there is no such improvement of sensitivity at higher pressure, for e.g. at 760 mmHg. For a given pressure sensor diaphragm diameter working at a given bias pressure range, there exists a maximum sensitivity that can hardly be exceeded.
- One method for increasing the sensitivity of such pressure sensor is to reposition the diaphragm to the position that would exist if there was no such bias pressure.
- One way of achieving this goal would be to fill the internal cavity of the sensor with a gas at the same pressure as bias pressure, atmospheric pressure for catheter tip applications, such that differential pressure would vanish at said bias pressure.
- having the internal cavity filled with a gas instead of being under vacuum, makes the sensor very sensitive to temperature. For example, if at atmospheric pressure, the gas pressure within the internal cavity of a pressure sensor would increase by 44 mmHg for a temperature rise from 20°C to 37°C.
- the embodiment shown in Fig. 4 consists in repositioning the diaphragm close to its original position by inducing a tensile stress on the external surface of the diaphragm such that it moves upward to an optimal position.
- a thin layer of expended material 22, provided by having such a layer releasing internal compressive stresses, located on the central portion of the external surface of the diaphragm 21 would serve this goal.
- Fig. 5 to Fig. 8 illustrate one method of making such a pressure sensor with high pressure sensitivity.
- the Fabry-Perot pressure sensor diaphragm can be made using a Silicon-On-lnsulator (SOI) as illustrated in Fig. 5.
- SOI Silicon-On-lnsulator
- An SOI is made of a handle 33, which is a thick portion of silicon.
- the handle 33 is usually released, i.e., removed, once the sensor is completed.
- the silicon device 31 is the portion of the SOI that constitutes the diaphragm. It is separated from the handle by a layer of silicon dioxide (SiO 2 ) 32.
- the SiO 2 layer 32 allows easy releasing of the diaphragm from the handle as there are chemicals for preferentially etching silicon over silicon dioxide.
- the manufacturing process of SOI substrates involves the thermal growth of the SiO 2 layer 32 at a fairly high temperature. Considering the temperature at which the SiO 2 layer 32 is grown and the difference in the coefficient of thermal expansion between SiO 2 and the opposite silicon device 31 (0.5x10 "6 and 2.7x10 "6 at room temperature respectively), it becomes apparent that once at room temperature the SiO 2 32 will be subject to significant compressive stresses. Similarly, the silicon device 31 will be subject to opposite stresses, i.e., tensile stresses.
- the whole SOI is typically joined to glass substrate 51 by way of anodic bonding, where Fabry-Perot cavities 52 are first etched into the surface.
- the handle 33 is removed by grinding and etching processes as well known by those skilled in the art.
- the sensor is left with a diaphragm made of the silicon device layer 53 and the SiO 2 layer 54.
- Fig. 8 illustrates the same pressure sensor, with the diaphragm moved back to an optimal position.
- the central SiO 2 dot portion 61 is left intact over the external surface of silicon diaphragm 62, while the edge portion is removed by way of preferential etching as known by those skilled in the art.
- Figs. 9 and 0 illustrate the sensitivity of two pressure sensors having: 1) the same diaphragm diameter; 2) a different diaphragm thickness, where sensor of Fig. 9 has a thicker diaphragm; and 3) a SiO 2 dot which thickness is varied.
- Fig. 11 gives the slope of response curves of Fig. 9 and 10 around 760mmHg.
- the sensitivity of both pressure sensors, i.e., both thin and thick P1611 PC00 diaphragm, at 760 mmHg is measured as being 1.36 nm/mmHg when no dot is present. So no sensitivity improvement resulting from thinning the diaphragm was possible.
- maximum sensitivity for sensor with thin diaphragm and optimal Si0 2 dot thickness is as high as 9.7 nm/mmHg, while it reaches 3.2 nm/mmHg for sensor with a thicker diaphragm. This compares advantageously with a sensitivity of 1.36 nm/mmHg without the dot.
- the Si0 2 dot has the effect of sliding the sensor response curve of sensor without Si0 2 dot toward higher pressure, or said otherwise the sensor response curve is become biased toward larger pressure.
- the response of the sensor contains an inflexion point at 0 mmHg, where the diaphragm is flat.
- the response of the sensor for negative pressures i.e., for situations where pressure is higher inside the internal cavity, is symmetrical.
- Figs. 9 and 10 it is the whole response curve that shifts toward higher pressure, with the inflexion point moving toward higher pressure as thickness of Si0 2 dot increases. Said otherwise, the presence of such a pre-stressed dot induces a bias to the pressure sensor that brings maximum sensitivity to a point that corresponds to actual bias pressure.
- pressure sensor sensitivity can be increased by biasing the diaphragm.
- the diaphragm is biased by adding a dot at the center of the external surface of the diaphragm, the dot being pre-stressed in compression. Upon relaxing such internal compressive stresses, the diaphragm bows outward with the result of an increased sensitivity.
- Fig. 12 shows a FP sensors 70 where the diagram is repositioned close to its flat position by inducing a compressive stress on the internal surface of the diaphragm such that it moves upward to an optimal position.
- a thin layer of material 72 exhibiting internal tensile stresses and located on the central portion of the internal surface of the diaphragm 71 would serve this goal.
- Materials of interest that may be deposited or grown to exhibit such internal tensile stresses include various materials such as chromium, aluminium, titanium, iron, gold, titanium oxide, tantalum oxide, silicon dioxide, zirconium oxide, aluminium oxide and silicon nitride.
- Similar designs may also involve having a pre-stressed layer of material deposited or grown on the peripheral edge section 55 of the diaphragm, therefore configured as a ring shape.
- a layer with internal tensile stresses 75 would deliver similar results if deposited or grown on the peripheral section of the external surface 76 of the diaphragm, and inversely Fig. 14 shows a layer with internal compressive stresses 80 deposited or grown on the peripheral section of the internal surface 81 of the diaphragm would deliver similar results.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161450959P | 2011-03-09 | 2011-03-09 | |
PCT/CA2012/000211 WO2012119237A1 (en) | 2011-03-09 | 2012-03-09 | A miniature high sensitivity pressure sensor |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2638375A1 true EP2638375A1 (en) | 2013-09-18 |
EP2638375A4 EP2638375A4 (en) | 2014-10-15 |
EP2638375B1 EP2638375B1 (en) | 2019-01-02 |
Family
ID=46794292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12755222.2A Active EP2638375B1 (en) | 2011-03-09 | 2012-03-09 | A miniature high sensitivity pressure sensor |
Country Status (6)
Country | Link |
---|---|
US (1) | US8752435B2 (en) |
EP (1) | EP2638375B1 (en) |
JP (1) | JP5894197B2 (en) |
CN (1) | CN103534568B (en) |
CA (1) | CA2819564C (en) |
WO (1) | WO2012119237A1 (en) |
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USRE48649E1 (en) | 2012-04-27 | 2021-07-20 | Abiomed Europe Gmbh | Intravascular rotary blood pump |
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WO2012119237A1 (en) | 2012-09-13 |
CA2819564C (en) | 2017-01-24 |
US20120227505A1 (en) | 2012-09-13 |
JP2014507666A (en) | 2014-03-27 |
JP5894197B2 (en) | 2016-03-23 |
EP2638375B1 (en) | 2019-01-02 |
EP2638375A4 (en) | 2014-10-15 |
CA2819564A1 (en) | 2012-09-13 |
US8752435B2 (en) | 2014-06-17 |
CN103534568B (en) | 2015-11-25 |
CN103534568A (en) | 2014-01-22 |
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