EP2626860B1 - Élément de mémoire mram autoréférencé avec un signal de détection linéaire - Google Patents

Élément de mémoire mram autoréférencé avec un signal de détection linéaire Download PDF

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EP2626860B1
EP2626860B1 EP12290043.4A EP12290043A EP2626860B1 EP 2626860 B1 EP2626860 B1 EP 2626860B1 EP 12290043 A EP12290043 A EP 12290043A EP 2626860 B1 EP2626860 B1 EP 2626860B1
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Prior art keywords
sense
magnetization
layer
read
junction
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German (de)
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EP2626860A1 (fr
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Lucien Lombard
Kenneth Mackay
Ioan Lucian Prejbeanu
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Crocus Technology SA
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Crocus Technology SA
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Priority to EP12290043.4A priority Critical patent/EP2626860B1/fr
Priority to RU2013104558/08A priority patent/RU2013104558A/ru
Priority to TW102104534A priority patent/TW201346900A/zh
Priority to US13/761,292 priority patent/US8797793B2/en
Priority to JP2013022577A priority patent/JP2013162132A/ja
Priority to KR1020130014524A priority patent/KR20130091696A/ko
Priority to CN201310088320.2A priority patent/CN103247330B/zh
Publication of EP2626860A1 publication Critical patent/EP2626860A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

Definitions

  • the present invention concerns a self-referenced magnetic random access memory (MRAM) cell using linear sensing signal to ensure low reading magnetic field.
  • MRAM magnetic random access memory
  • Magnetic random access memory (MRAM) cells using the so-called self-referenced reading operation typically comprise a magnetic tunnel junction formed of a magnetic storage layer having a magnetization which direction can be changed from a first stable direction to a second stable direction, a thin insulating layer, and a sense layer having a reversible direction.
  • Self-referenced MRAM cells allows for performing the write and read operation with low power consumption and an increased speed.
  • dipolar coupling between the storage and sense layers occurs due to local magnetic stray field, coupling the magnetization of the sense layer with the one of the storage layer in a closed magnetic flux configuration. Switching the sense layer magnetization during the read operation will then require applying a magnetic field high enough to overcome the dipolar coupling.
  • the dipolar coupling results in a shift (or bias) of the hysteresis loop when applying a field cycle to measure the hysteresis loop of the sense layer.
  • This dipolar coupling depends on the thickness and magnetization of the storage and sense layers, and on the size of the magnetic tunnel junction. In particular, dipolar coupling increases with decreasing the magnetic tunnel junction diameter and can thus become a major issue when scaling down the MRAM cell.
  • US20090190390 concerns an MRAM cell comprising a first magnetic layer structure having a first magnetization along a first axis; a second magnetic layer structure, and a non-magnetic spacer layer between the first and second magnetic layer structure.
  • the second magnetic layer structure has a second magnetization along a second axis that is arranged at an angle with regard to the first axis such that, by changing the direction of the second magnetization, the direction of the first magnetization along the first axis can be determined.
  • the present disclosure concerns a self-referenced random access memory (MRAM) element, comprising: a magnetic tunnel junction having a junction resistance, comprising: a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold; a sense layer having a sense magnetization; and a tunnel barrier layer included between the storage layer and the sense layer; the magnetic tunnel junction having a magnetoresistance corresponding to the difference between a high junction resistance value where the sense magnetization is antiparallel to the storage magnetization, and a low junction resistance value where the sense magnetization is parallel to the storage magnetization; the MRAM element further comprising: an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction (61) that is substantially perpendicular to the first direction; and a first current line for providing a first read magnetic field adapted to adjust the sense magnetization about the second direction such as to vary the junction resistance within a range smaller than the magnetoresistance; wherein said aligning device
  • said aligning device can comprise a second antiferromagnetic layer exchange coupling the sense layer such as to pin the sense magnetization along the second direction when the magnetic tunnel junction is at the low temperature threshold and in the absence of the first read magnetic field.
  • the exchange coupling between the second antiferromagnetic layer and the sense layer can be such that the sense magnetization is adjustable about the second direction when the magnetic tunnel junction is at the low temperature threshold and when applying the first read magnetic field.
  • said aligning device can comprise a second current line substantially orthogonal with the first field line and adapted for applying a second field current such as to saturate the sense magnetization along the second direction.
  • the MRAM element can further comprise a first antiferromagnetic layer exchange coupling the storage layer such as to pin the storage magnetization along a first direction when the magnetic tunnel junction is at a low temperature threshold and when applying the first read magnetic field.
  • the present disclosure also pertains to a method for reading the MRAM element, comprising:
  • the self-referenced MRAM cell disclosed herein can be read with an increased reliability when using a low reading magnetic field, and has reducing power consumption compared with conventional self-referenced MRAM cells, even in the presence of a strong dipolar offset.
  • Fig. 1 illustrates a self-referenced random access memory (MRAM) element 1 according to an embodiment.
  • the MRAM element 1 comprises a magnetic tunnel junction 2 comprising a storage layer 23 having a storage magnetization 231; a sense layer 21 having a sense magnetization 211; and a tunnel barrier layer 22 between the storage layer 23 and the sense layer 21.
  • Fig. 2 represents a top view of the storage layer 23 ( Fig. 2a ) and of the sense layer 21 ( Fig. 2b ) of the MRAM element 1, illustrating arrangements of the storage and sense magnetizations 231, 211, respectively.
  • the magnetic tunnel junction 2 further comprises a first antiferromagnetic layer 24 having a first critical temperature T C1 and exchange coupling the storage layer 23 such that, at a low temperature threshold below the first critical temperature T C1 , the storage magnetization 231 is pinned along a first direction 60 at the low temperature threshold and is no more pinned at a high temperature threshold, at and above the first critical temperature T C1 .
  • a thermally-assisted (TA) write operation of the MRAM element 1 can comprise:
  • Heating the magnetic tunnel junction 2 can be performed by passing a heating current 31 in the magnetic tunnel junction 2, via a first current line 3 in electrical contact with the magnetic tunnel junction 2. Adjusting the orientation of the storage magnetization 231 can be performed by applying an external write magnetic field 42 adapted to switch the storage magnetization 231 along the first direction 60.
  • the MRAM element 1 further comprises a first field line 4 in communication with the magnetic tunnel junction 2.
  • the first field line 4 is adapted for passing a write current 41 such as to generate the write magnetic field 42.
  • the first field line 4 and the write current 41 are represented entering the page such that the write magnetic field 42 can switch the storage magnetization 231 from an initial orientation toward the left (not shown) to a written orientation toward the right.
  • the write magnetic field 42 can also be generated by passing the field current 41 in a current line 3. Once the magnetic tunnel junction 2 has been cooled to the low temperature threshold, the storage magnetization 231 becomes pinned in the adjusted, or written, orientation in accordance with the orientation of the write magnetic field 42.
  • a method for reading the MRAM element 1 using a self-referenced read operation can comprise:
  • Adjusting the sense magnetization 211 in a first read direction can comprise applying a first read magnetic field 44 having a first polarity by passing a first read current 43 with a first polarity in the first field line 4.
  • Adjusting the sense magnetization 211 in a second read direction can comprise applying the first read magnetic field 44 having a second polarity, opposed to the first polarity, by passing the first read current 43 with a second polarity, opposed to the first polarity, in the first field line 4.
  • the first read magnetic field 44 is applied at a read temperature that is below the first critical temperature, for example that can correspond to the low temperature threshold, where the storage magnetization 231 is being pinned by the first antiferromagnetic layer 24.
  • Measuring the first and second junction resistance values R 1 , R 2 can be performed by passing a sense current 32 in the magnetic tunnel junction 2 via the current line 3.
  • the magnetic tunnel junction 2 further comprises second antiferromagnetic layer 20 having a second critical temperature T C2 being higher than the first critical temperature T C1 .
  • the second antiferromagnetic layer 20 exchange couple the sense layer 21 such that, below the second critical temperature T C2 or at the low temperature threshold, the sense magnetization 211 has a magnetic anisotropy, or exchange anisotropy, along a second direction 61 that is substantially perpendicular to the first direction 60. More particularly, below the second critical temperature T C2 of the tunnel magnetic junction 2 (at the low temperature threshold) and in the absence of the first read magnetic field 44, the sense magnetization 211 is pinned along the second direction 61.
  • the sense magnetization 211 is no more pinned at and above the second critical temperature T C2 , or at the high temperature threshold.
  • Figs. 2a and 2b illustrate, respectively, a "top view” the storage magnetization 231 oriented along the first direction 60 and the sense magnetization 211 oriented along the second direction 61, perpendicular to the first direction 60.
  • the storage magnetization 231 is shown oriented towards the right and the sense magnetization 211 is shown oriented exiting the page.
  • Pinning the magnetization 211 in the second direction 61 by the second antiferromagnetic layer 20 can be obtained by magnetic annealing the second antiferromagnetic layer 20 during the fabrication process of the MRAM element 1, after depositing the second sense layer 21.
  • the second antiferromagnetic layer 20 is further arranged such that, when applying the first read magnetic field 44 at the low temperature threshold, the sense magnetization 211 can be adjusted about the second direction 61 while the storage magnetization 231 remains aligned substantially parallel to the first direction 60.
  • the sense magnetization 211 is adjusted by an angle ⁇ or - ⁇ around the second direction 61 depending on the read direction of the first read magnetic field 44.
  • the adjustment angle ⁇ increases with increasing the applied first read magnetic field 44.
  • the exchange coupling between the antiferromagnetic layer 24 and the storage layer 23 should be such that the storage magnetization 231 remains pinned in the first direction 60 in the presence of the first read magnetic field 44.
  • the second antiferromagnetic layer 20 being made from a material comprising a manganese-based alloy, such as PtMn, or any other suitable materials.
  • the first antiferromagnetic layer 24 can be made from a material comprising a manganese-based alloy, such as IrMn or FeMn, or any other suitable materials.
  • Fig. 3 illustrates a resistance response curve 70 of the magnetic tunnel junction 2 where the the sense magnetization 211 is being adjusted about the second direction 61 substantially perpendicular to the first direction 60 of the storage magnetization 231. More particularly, Fig. 3 plots the junction resistance R of the magnetic tunnel junction 2 as a function of the magnetic field strength H of the first read magnetic field 44.
  • the junction resistance R varies from a high junction resistance value R max when the sense magnetization 211 is adjusted in a direction substantially antiparallel to the storage magnetization 231 ( ⁇ about -90°), to a low junction resistance value R min when the sense magnetization 211 is adjusted in a direction substantially parallel to the storage magnetization 231 ( ⁇ about 90°).
  • the high and low junction resistance values R max , R min are obtained by applying the first read magnetic field 44 with a high magnetic field strength H in the first and second polarity, respectively.
  • the junction resistance R has intermediate value comprised between the high and low junction resistance values R max , R min , corresponding to the sense magnetization 211 being adjusted at intermediate orientations between the parallel and antiparallel directions (-90° ⁇ ⁇ ⁇ 90°).
  • this is represented by the first and second junction resistance values R 1 and R 2 , being measured when the first read magnetic field 44 is applied with a field strength value H 1 , H 2 having a first polarity H 1 and a second polarity H 2 .
  • the first read magnetic field 44 is such that the first and second junction resistance values R 1 , R 2 are comprised in the linear portion of the resistance response curve 70, as illustrated in Fig.
  • the variation range VR should be large such as to increase the reliability of the read operation.
  • the variation range VR should be at least about 20% of the magnetoresistance MR of the magnetic tunnel junction 2.
  • the first read magnetic field 44 can also be applied in an oscillating manner, i.e., swept from the first to the second polarity by passing the first read current 43 having an alternating polarity.
  • the sense magnetization 211 is thus fluctuated around the second direction 61. This latter alternative can result in an increase speed in the read operation.
  • An advantage of the MRAM element 1 disclosed above is that, during the read operation, the sense magnetization 211 can be adjusted by applying the first read magnetic field 44 with a small field strength. The sense magnetization 211 is then adjusted with small angle ⁇ around the second direction 61 and the junction resistance R can be varied linearly (linear sensing signal). Another advantage is that applying the first read magnetic field 44 with small field strength allows for reducing power consumption of the MRAM element 1. Design and manufacturing control of the MRAM element 1 can therefore be simplified. Further, the amount of power dissipated by the MRAM element 1 during the read operation can be reduced.
  • Both storage layer 23 and sense layer 21 tend to exhibit magnetic stray fields (not shown) which couple each other such as to favor antiparallel alignment of sense magnetization 211 with respect to storage magnetization 231. This is called dipolar coupling.
  • the magnitude of the magnetic stray fields originating from the sense layer 21 and storage layer 23 depends on the diameter of the magnetic tunnel junction 2 and increase when the diameter is decreased.
  • the dipolar coupling results in a shift of the magnetoresistive linear sensing signal of the magnetic tunnel junction.
  • the magnitude of the shift of the magnetoresistive linear sensing signal increases when the diameter of the magnetic tunnel junction is decreased. The dipolar coupling can therefore become a major issue when scaling down the MRAM element 1.
  • the offset values H' 1 , H' 2 of the first read magnetic field 44 can be such that the difference between the first and second resistance values R' 1 , R' 2 is small such that the variation range VR becomes smaller than 20% of the magnetoresistance MR.
  • the offset values H' 1 , H' 2 of the first read magnetic field 44 could even be shifted completely on the plateau of the resistance response curve 70 yielding a variation range VR essentially null.
  • Fig. 4 compares the resistance response curve 70 of Fig. 3 with a resistance response curve 70' with increased saturation field of sense layer 21.
  • the resistance response curve 70' has a smaller slope and the difference between the first resistance R" 1 and the second values R" 2 obtained when applying the first read magnetic field 44 with the offset values H' 1 , H' 2 results in variation range VR being larger.
  • the second antiferromagnetic layer 20 is arranged such that the exchange coupling between the second antiferromagnetic layer 20 and the sense layer 21 shifts the resistance response curve 70' such that the variation range VR is at least about 20% of the magnetoresistance MR when applying the first read magnetic field 44.
  • a stronger exchange coupling between the second antiferromagnetic layer 20 and the sense layer 21, or larger exchange bias, can be obtained by optimizing the properties of the antiferromagnetic layer 20.
  • the MRAM element 1 further comprises a second field line 5 in communication with the magnetic tunnel junction 2.
  • the second field line 5 is adapted for passing a second read current 51 such as to generate a second read magnetic field 52.
  • the second current line 5 is substantially orthogonal with the first field line 4, in communication with the opposed end of the magnetic tunnel junction 2.
  • Other placements of the second field line 5 are however also possible.
  • the second field line 5 could be disposed on at the same end of the magnetic tunnel junction 2 than the first field line 4.
  • the second read magnetic field 52 is adapted for providing the second magnetic anisotropy along the second direction 61 being substantially perpendicular to the first direction 60.
  • the second read magnetic field 52 is such as to saturate the sense magnetization 211 in the second direction 61 being substantially perpendicular to the first direction 60.
  • the second read magnetic field 52 is shown exiting the page, thus perpendicular to the direction of the storage magnetization 231 being substantially parallel to the first direction 60.
  • the read operation further comprises a step of applying the second read magnetic field 52 such as to saturate the sense magnetization 211 in the second direction 61 being substantially perpendicular to the first direction 60.
  • Adjusting the sense magnetization 211 in the first and second read directions can comprise applying the first read magnetic field 44 in the first and second, respectively.
  • the first read magnetic field 44 is applied simultaneously with the second read magnetic field 52 such that the sense magnetization 211 is adjusted by the first read magnetic field 44 about the second direction 61 set by the second read magnetic field 52.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Claims (8)

  1. Elément de mémoire à accès aléatoire MRAM auto-référencé (1), comprenant :
    une jonction tunnel magnétique (2) ayant une résistance de jonction (R), comprenant:
    une couche de stockage (23) ayant une aimantation de stockage (231) qui est piégée le long d'une première direction (60) lorsque la jonction tunnel magnétique (2) est à un seuil de température bas ;
    une couche de détection (21) ayant une aimantation de détection (211) ; et
    une couche barrière à effet de tunnel (22) comprise entre la couche de stockage (23) et la couche de détection (21) ;
    la jonction tunnel magnétique (2) ayant une magnétorésistance (MR) correspondant à la différence entre une valeur de résistance de jonction élevée (Rmax) où l'aimantation de détection (211) est antiparallèle à l'aimantation de stockage (231), et une valeur de résistance de jonction basse (Rmin) où l'aimantation de détection (211) est parallèle à l'aimantation de stockage (231) ;
    l'élément MRAM (1) comprenant en outre:
    un dispositif d'alignement (20, 5, 52) agencé pour fournir une aimantation de détection (211) avec une anisotropie magnétique selon une deuxième direction (61) qui est essentiellement perpendiculaire à la première direction (60) ; et
    une première ligne de courant (4) pour fournir un premier champ magnétique de lecture (44) adapté pour ajuster l'aimantation de détection (211) selon la deuxième direction (61) en sorte à varier la résistance de jonction au sein d'une fourchette (VR) inférieure à la magnétorésistance (MR) ;
    caractérisé en ce que ledit dispositif d'alignement (20, 5, 52) est en outre agencé en sorte que la résistance de jonction varie linéairement au sein de la fourchette (VR) étant au moins approximativement 20% de la magnétorésistance (MR).
  2. Elément MRAM (1) selon la revendication 1, dans lequel ledit dispositif d'alignement comprend une deuxième couche antiferromagnétique (20) qui couple par échange la couche de détection (21) en sorte à piéger l'aimantation de détection (211) selon la deuxième direction (61) lorsque la jonction tunnel magnétique (2) est au seuil de température bas et en l'absence du premier champ magnétique de lecture (44).
  3. Elément MRAM (1) selon la revendication 2, dans lequel l'accouplement par échange entre la deuxième couche antiferromagnétique (20) et la couche de détection (21) est telle que l'aimantation de détection (211) est ajustable selon la deuxième direction (61) lorsque la jonction tunnel magnétique (2) est au seuil de température bas et lorsque le premier champ magnétique de lecture (44) est appliqué.
  4. Elément MRAM (1) selon les revendications 2 ou 3, dans lequel l'accouplement par échange entre la deuxième couche antiferromagnétique (20) et la couche de détection (21) décale la courbe de réponse de résistance (70') en sorte que la résistance de jonction varie linéairement au sein de la fourchette (VR) étant au moins approximativement 20% de la magnétorésistance (MR).
  5. Elément MRAM (1) selon la revendication 1, dans lequel ledit dispositif d'alignement comprend une deuxième ligne de courant (5) essentiellement orthogonale à la première ligne de champ (4) et adaptée pour appliquer un deuxième courant de champ (52) en sorte à saturer l'aimantation de détection (211) selon la deuxième direction (61).
  6. Elément MRAM (1) selon l'une quelconque des revendications 1 à 5, comprenant en outre
    une première couche antiferromagnétique (24) qui couple par échange la couche de stockage (23) en sorte à piéger l'aimantation de stockage (231) selon une première direction (60) lorsque la jonction tunnel magnétique (2) est à un seuil de température bas et lorsque le premier champ magnétique de lecture (44) est appliqué.
  7. Procédé de lecture de l'élément MRAM (1) caractérisé par l'une quelconque des revendications 1 à 6, comprenant :
    d'ajuster l'aimantation de détection (211) dans une première direction de lecture ;
    de mesurer une première valeur de résistance de jonction (R1);
    d'ajuster l'aimantation de détection (211) dans une deuxième direction de lecture ; et
    de mesurer une deuxième valeur de résistance de jonction (R2);
    dans lequel une fourchette de variation de résistance (VR) correspondant à la différence entre la première valeur de résistance de jonction (R1) et la deuxième valeur de résistance de jonction (R2) est au moins approximativement 20% de la magnétorésistance (MR).
  8. Procédé selon la revendication 7, dans lequel
    ledit ajustement de l'aimantation de détection (211) comprend d'appliquer un premier champ magnétique de lecture (44) en faisant passer un premier courant de lecture (43) dans la première ligne de champ (4).
EP12290043.4A 2012-02-08 2012-02-08 Élément de mémoire mram autoréférencé avec un signal de détection linéaire Active EP2626860B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP12290043.4A EP2626860B1 (fr) 2012-02-08 2012-02-08 Élément de mémoire mram autoréférencé avec un signal de détection linéaire
RU2013104558/08A RU2013104558A (ru) 2012-02-08 2013-02-04 Самоотносимая ячейка магнитной памяти типа mram c линейным считывающим сигналом
TW102104534A TW201346900A (zh) 2012-02-08 2013-02-06 具有線性感測信號之自我參照磁性隨機存取記憶體元件
JP2013022577A JP2013162132A (ja) 2012-02-08 2013-02-07 線形読出信号を用いた自己参照ｍｒａｍ素子
US13/761,292 US8797793B2 (en) 2012-02-08 2013-02-07 Self-referenced MRAM element with linear sensing signal
KR1020130014524A KR20130091696A (ko) 2012-02-08 2013-02-08 선형 감지 신호를 갖는 자기-참조 ｍｒａｍ 소자
CN201310088320.2A CN103247330B (zh) 2012-02-08 2013-02-08 自参考型mram元件及其读取方法

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EP12290043.4A EP2626860B1 (fr) 2012-02-08 2012-02-08 Élément de mémoire mram autoréférencé avec un signal de détection linéaire

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US (1) US8797793B2 (fr)
EP (1) EP2626860B1 (fr)
JP (1) JP2013162132A (fr)
KR (1) KR20130091696A (fr)
CN (1) CN103247330B (fr)
RU (1) RU2013104558A (fr)
TW (1) TW201346900A (fr)

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EP2851903B1 (fr) * 2013-09-19 2017-03-01 Crocus Technology S.A. Dispositif de mémoire autoréférencé et procédé pour faire fonctionner ledit dispositif
EP2905783B1 (fr) * 2014-02-06 2018-09-19 Crocus Technology S.A. Méthode d'écriture avec une reproductibilité améliorée d'une mémoire TAS MRAM multibit configurée pour une operation de lecture auto-reférencée
EP2966453B1 (fr) * 2014-07-11 2018-10-31 Crocus Technology Accéléromètre à base MLU utilisant une jonction à effet tunnel magnétique
US11017828B2 (en) 2017-07-27 2021-05-25 Crocus Technology Sa Apparatus for generating a magnetic field and method of using said apparatus
CN109473543A (zh) * 2017-09-07 2019-03-15 中电海康集团有限公司 存储单元与具有其的存储器

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DE10149737A1 (de) * 2001-10-09 2003-04-24 Infineon Technologies Ag Halbleiterspeicher mit sich kreuzenden Wort- und Bitleitungen, an denen magnetoresistive Speicherzellen angeordnet sind
FR2925747B1 (fr) * 2007-12-21 2010-04-09 Commissariat Energie Atomique Memoire magnetique a ecriture assistee thermiquement
US7755936B2 (en) * 2008-01-28 2010-07-13 Qimonda Ag Integrated circuits, cell, cell arrangement, method of reading a cell, memory module
US8045366B2 (en) * 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
EP2276034B1 (fr) * 2009-07-13 2016-04-27 Crocus Technology S.A. Cellule de mémoire à accès aléatoire magnétique auto-référencée
US7999338B2 (en) * 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
US8576617B2 (en) * 2011-11-10 2013-11-05 Qualcomm Incorporated Circuit and method for generating a reference level for a magnetic random access memory element

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KR20130091696A (ko) 2013-08-19
US20130201756A1 (en) 2013-08-08
CN103247330B (zh) 2017-05-03
CN103247330A (zh) 2013-08-14
EP2626860A1 (fr) 2013-08-14
TW201346900A (zh) 2013-11-16
RU2013104558A (ru) 2014-08-10
JP2013162132A (ja) 2013-08-19
US8797793B2 (en) 2014-08-05

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